TW201907756A - Plasma processing device - Google Patents

Abstract

A plasma processing device, comprising: a balun that has a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; a first electrode that is electrically connected to the first balanced terminal; a second electrode that is electrically connected to the second balanced terminal; an adjustment reactance that imparts an effect on the relationship of a first voltage applied to the first electrode and a second voltage applied to the second electrode; a substrate-holding unit that holds a substrate; and a drive mechanism that causes the substrate-holding unit to rotate.

Description

Plasma processing device

The present invention relates to a plasma processing apparatus.

There is a plasma processing apparatus that generates a plasma by applying a high frequency between two electrodes, and processes a substrate by the plasma. Such a plasma processing apparatus can operate as a sputtering apparatus or as an etching apparatus by the area ratio and / or bias voltage of two electrodes. A plasma processing device configured as a sputtering device includes a first electrode holding a target and a second electrode holding a substrate. A high frequency is applied between the first electrode and the second electrode, and the first electrode and the second electrode are applied. Plasma is generated between the electrodes (between the target and the substrate). By the generation of the plasma, a self-bias voltage is generated on the surface of the target, whereby ions will collide with the target, and particles of the material constituting this will be released from the target.

Patent Document 1 describes a sputtering device including a grounded chamber, a target electrode connected to an RF generation source via an impedance matching circuit network, and a substrate holding electrode grounded via a substrate electrode tuning circuit.

In the sputtering apparatus described in Patent Document 1, the chamber functions as an anode in addition to the substrate holding electrode. The self-bias voltage varies depending on the state of the part that can function as the cathode and the state of the part that can function as the anode. Therefore, when the chamber functions as the anode in addition to the substrate holding electrode, the self-bias voltage also changes depending on the state of the part functioning as the anode in the chamber. Changes in the self-bias voltage will cause changes in the plasma potential, and changes in the plasma potential will affect the characteristics of the film being formed.

When a film is formed on a substrate by a sputtering device, a film is also formed on the inner surface of the chamber. As a result, the state of the portion of the chamber that can function as an anode changes. Therefore, if the sputtering device is continuously used, the self-bias voltage will change depending on the film formed on the inner surface of the chamber, and the plasma potential will also change. Therefore, it has been difficult to maintain the characteristics of a film formed on a substrate to be constant when a sputtering device has been used in the past for a long time.

Similarly, when the etching device is used for a long period of time, the self-bias voltage also changes depending on the film formed on the inner surface of the chamber. As a result, the plasma potential also changes, so it is difficult to maintain the etching characteristics of the substrate at a certain level. . [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Publication No. 55-35465

The present invention has been developed based on the above-mentioned problems, and provides a technique that is advantageous for stabilizing the plasma potential during long-term use.

A first aspect of the present invention relates to a plasma processing apparatus, and the plasma processing apparatus includes: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; Vacuum container; the first electrode electrically connected to the first balanced terminal; the second electrode electrically connected to the second balanced terminal; affects the first voltage applied to the first electrode and is applied to A reactor for adjusting the relationship between the second voltage of the second electrode; (i) a substrate holding portion that holds the substrate; and a driving mechanism that rotates the substrate holding portion.

A second aspect of the present invention relates to a plasma processing method. The aforementioned plasma processing method is a plasma processing method for processing a substrate in a plasma processing apparatus. The plasma processing apparatus includes: (1) having a first unbalanced terminal, a 2 baluns of the unbalanced terminal, the first balanced terminal, and the second balanced terminal; 接地 a vacuum container grounded; the first electrode electrically connected to the first balanced terminal; 平衡 electrically connected to the second balanced terminal A second electrode; 之 an adjustment reactor that affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; a substrate holding portion holding a substrate; and Drive mechanism. Its features include: a process of adjusting the aforementioned reactor in such a manner that the aforementioned relationship can be adjusted; and a process of allowing the substrate to be processed while being rotated by the aforementioned driving mechanism after the aforementioned process.

Hereinafter, the present invention will be described with reference to the accompanying drawings through embodiments illustrated by examples.

FIG. 1 schematically shows the configuration of the plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can be operated as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balanced-unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, and a second electrode 111. Or, it can also be understood that the plasma processing apparatus 1 includes a balun 103 and a main body 10, and the main body 10 includes a vacuum container 110, a first electrode 106, and a second electrode 111. The main body 10 includes a first terminal 251 and a second terminal 252. The first electrode 106 may be disposed to separate the vacuum space and the external space (that is, a part of the vacuum partition wall) together with the vacuum container 110, or may be disposed in the vacuum container 110. The second electrode 111 may be arranged to separate the vacuum space and the external space (that is, a part of the vacuum partition wall) together with the vacuum container 110, or may be arranged in the vacuum container 110.

The balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103. . The vacuum container 110 is made of a conductor and is grounded.

In the first embodiment, the first electrode 106 is a cathode and holds the target 109. The target 109 is, for example, an insulator material or a conductor material. In the first embodiment, the second electrode 111 is an anode and holds the substrate 112. The plasma processing apparatus 1 according to the first embodiment operates as a sputtering apparatus that forms a film on the substrate 112 by sputtering of the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The fact that the first electrode 106 and the first balanced terminal 211 are electrically connected means that a current can flow between the first electrode 106 and the first balanced terminal 211, and is configured between the first electrode 106 and the first balanced terminal 211. There is a current path. Similarly, in this specification, a and b are electrically connected to each other, meaning that a current path is formed between a and b in such a manner that current can flow between a and b.

The above configuration can also be understood as the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211. The second terminal 252 is electrically connected to the second balanced terminal 212.

In the first embodiment, the first electrode 106 and the first balanced terminal 211 (the first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks a DC current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of the blocking capacitor 104, an impedance matching circuit 102 described later may be configured to block a DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 is supported by the vacuum container 110 via an insulator 107. The second electrode 111 may be supported by the vacuum container 110 via the insulator 108. Alternatively, an insulator 108 may be disposed between the second electrode 111 and the vacuum container 110.

The plasma processing apparatus 1 may further include a high-frequency power source 101 and an impedance matching circuit 102 disposed between the high-frequency power source 101 and the balun 103. The high-frequency power source 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) to the balun 103 between the first unbalanced terminal 201 and the second unbalanced terminal 202 via the impedance matching circuit 102. In other words, the high-frequency power source 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. Or, it can also be understood that the high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the impedance matching circuit 102 and the balun 103.

A gas (for example, Ar, Kr, or Xe gas) is supplied to the internal space of the vacuum container 110 via a gas supply unit (not shown) provided in the vacuum container 110. A high-frequency power is supplied between the first electrode 106 and the second electrode 111 via the high-frequency power source 101 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. As a result, a plasma is generated between the first electrode 106 and the second electrode 111, and a self-bias voltage is generated on the surface of the target 109. Ions in the plasma will collide with the surface of the target 109 and be released from the target 109. Particles of the material that makes up that. Then, a film is formed on the substrate 112 by the particles.

FIG. 2A shows a configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. The first coil 221 and the second coil 222 are coils of the same number of windings, and share a core.

FIG. 2B shows another configuration example of the balun 103. The balun 103 shown in FIG. 2B includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. . The first coil 221 and the second coil 222 are coils of the same number of windings, and share a core. The balun 103 shown in FIG. 2B further includes a third coil 223 and a fourth coil 224, and a third coil 223 and a fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212. It is comprised so that the voltage of the connection node 213 of the 3rd coil 223 and the 4th coil 224 may be set as the midpoint of the voltage of the 1st balanced terminal 211 and the voltage of the 2nd balanced terminal 212. The third coil 223 and the fourth coil 224 are coils of the same number of windings, and share a core. The connection node 213 may also be grounded, may be connected to the vacuum container 110, or may be formed in a floating state.

The function of the balun 103 will be described with reference to FIG. 3. Let the current flowing through the first unbalanced terminal 201 be I1, let the current flowing through the first balanced terminal 211 be I2, let the current flowing through the second unbalanced terminal 202 be I2 ', and let the current I2 flow The current to ground is set to I3. I3 = 0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit for ground is the best. I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows to ground, the isolation performance of the balanced circuit against ground is the worst. The index ISO showing the degree of such isolation performance can be given by the following formula. Under this definition, the absolute value of ISO is larger and the isolation performance is better. ISO [dB] = 20log (I3 / I2 ’)

In FIG. 3, Rp-jXp indicates that the first electrode 106 and the second electrode 111 are viewed from the side of the first balanced terminal 211 and the second balanced terminal 212 in a state where plasma is generated in the internal space of the vacuum container 110. Impedance (including the reactance of the blocking capacitor 104) at the side (side of the body 10). Rp is a resistance component, and -Xp is a reactance component. In addition, in FIG. 3, X is a reactance component (inductance component) showing the impedance of the first coil 221 of the balun 103. ISO is relevant for X / Rp.

FIG. 4 illustrates the relationship between the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp) by way of example. The inventors have found that a configuration in which high frequency is supplied from the high-frequency power source 101 to the first electrode 106 and the second electrode 111 via the balun 103, and in particular, in this configuration, meeting 1.5 ≦ X / Rp ≦ 5000 is advantageous for The potential of the plasma (plasma potential) formed in the internal space (the space between the first electrode 106 and the second electrode 111) of the vacuum container 110 is dulled to the state of the inner surface of the vacuum container 110. Here, the fact that the plasma potential is insensitive to the state of the inner surface of the vacuum container 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 is equivalent to -10.0dB ≧ ISO ≧ -80dB.

5A to 5D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000. FIG. 5A shows a plasma potential and a cathode potential in a state where a film is not formed on the inner surface of the vacuum container 110. FIG. 5B shows the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. FIG. 5C shows a plasma potential and a cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 5D shows a plasma potential and a cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. It can be understood from FIGS. 5A to 5D that compliance with 1.5 ≦ X / Rp ≦ 5000 will help stabilize the plasma potential in various states for the inner surface of the vacuum container 110.

6A to 6D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6A shows a plasma potential and a cathode potential in a state where a film is not formed on the inner surface of the vacuum container 110. FIG. 6B shows a plasma potential and a cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. FIG. 6C shows a plasma potential and a cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 6D shows a plasma potential and a cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. It can be understood from FIGS. 6A to 6D that when it does not meet 1.5 ≦ X / Rp ≦ 5000, the plasma potential changes depending on the state of the inner surface of the vacuum container 110.

Here, in the case of X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.0, X / Rp = 0.5), the plasma potential can be easily adjusted. The state of the inner surface of the vacuum container 110 changes. In the case where X / Rp> 5000, a film is not formed on the inner surface of the vacuum container 110, and a discharge occurs only between the first electrode 106 and the second electrode 111. However, in the case of X / Rp> 5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential responds sensitively to this, and the results are shown as examples shown in FIGS. 6A to 6D. On the other hand, when X / Rp <1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (electrical characteristics of the film formed on the inner surface) is caused. The effect is significant and the plasma potential will change depending on the film formation. Therefore, as described above, it is advantageous in the case where the plasma processing apparatus 1 is configured so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

Referring to FIG. 7, an example of a method for determining Rp-jXp (only Rp is actually known) is shown. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the main body 10. The second terminal 252 (second electrode 111) of the main body 10 is grounded. In this state, high frequency is supplied from the high-frequency power source 101 to the first terminal 251 of the main body 10 through the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently configured by the coils L1 and L2 and the variable capacitors VC1 and VC2. The plasma can be generated by adjusting the capacitance of the variable capacitors VC1 and VC2. In the plasma stable state, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 (the side of the first electrode 106 and the second electrode 111) when the plasma is generated. The impedance of the impedance matching circuit 102 at this time is Rp + jXp.

Therefore, Rp-jXp can be obtained from the impedance Rp + jXp of the impedance matching circuit 102 at the time of impedance matching (actually known is only Rp). Rp-jXp may be obtained by simulation based on design data, for example.

From the Rp thus obtained, X / Rp can be specified. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

FIG. 8 schematically shows the configuration of a plasma processing apparatus 1 according to a second embodiment of the present invention. The plasma processing apparatus 1 according to the second embodiment operates as an etching apparatus for etching the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. In the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 according to the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 according to the second embodiment, the blocking capacitor 104 is disposed on the electrical connection path between the first electrode 106 and the first balanced terminal 211.

FIG. 9 schematically shows the configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention. The plasma processing apparatus 1 according to the third embodiment is a modification of the plasma processing apparatus 1 according to the first embodiment, and further includes at least one of a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9, the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. A corrugated tube 113 constituting a vacuum partition wall may be provided between the vacuum container 110 and the driving mechanism 114.

Similarly, the plasma processing apparatus 1 according to the second embodiment may further include at least one of a mechanism for raising and lowering the first electrode 106 and a mechanism for rotating the second electrode 106.

FIG. 10 schematically shows the configuration of a plasma processing apparatus 1 according to a fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The matters not mentioned in the plasma processing apparatus 1 according to the fourth embodiment are those according to the first to third embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 106 and a second electrode 135 constituting the first group, a first electrode 141, and a first electrode constituting the second group. 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 is provided with a first balun 103, a second balun 303, and a body 10, and the body 10 is provided with a vacuum container 110, a first electrode 106 and a second electrode constituting the first group. 135. The first electrode 141 and the second electrode 145 constituting the second group. The main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 is A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded.

The first electrode 106 of the first group is a holding target 109. The target 109 is, for example, an insulator material or a conductor material. The second electrode 135 of the first group is arranged around the first electrode 106. The first electrode 106 of the first group is a first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 135 of the first group is a second balanced terminal electrically connected to the first balun 103 212. The first electrode 141 of the second group is a holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is a first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is a second balanced terminal electrically connected to the second balun 303 412.

The above structure can be understood as the first electrode 106 of the first group is electrically connected to the first terminal 251, the second electrode 135 of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 is connected to the first balun 103, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. The above configuration can be understood as the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected The first balanced terminal 411 is electrically connected to the second balun 303, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 106 of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via a blocking capacitor 104. The blocking capacitor 104 is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. Instead of the blocking capacitor 104, the first impedance matching circuit 102 may be configured to block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. The first electrode 106 and the second electrode 135 of the first group are supported by the vacuum container 110 via an insulator 132.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group are supported by the vacuum container 110 via an insulator 142.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high frequency to the first balun 103 and the second unbalanced terminal 202 via the first impedance matching circuit 102. In other words, the first high-frequency power source 101 supplies high frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103, and the blocking capacitor 104. Alternatively, the first high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 106 and the second electrode 135 of the first group are first high-frequency supply units that supply high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high frequency to the first electrode 141 and the second electrode 145 of the second group through the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group are the second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the high-frequency supply from the first high-frequency power source 101, in a state where the plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come from the sides. The impedance when looking at the sides of the first electrode 106 and the second electrode 135 (side of the body 10) of the first group is Rp1-jXp1. The reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to satisfy 1.5 ≦ X1 / Rp1 ≦ 5000.

In addition, by the high-frequency supply from the second high-frequency power source 301, in a state where plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the sides of the first electrode 141 and the second electrode 145 of the second group (side of the body 10) are viewed from the side, the impedance is Rp2-jXp2. The reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to meet 1.5 ≦ X2 / Rp2 ≦ 5000.

FIG. 11 schematically shows the configuration of a plasma processing apparatus 1 according to a fifth embodiment of the present invention. The apparatus 1 according to the fifth embodiment is configured to have additional drive mechanisms 114 and 314 compared to the plasma processing apparatus 1 according to the fourth embodiment. The driving mechanism 114 may include at least one of a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. The driving mechanism 314 may be provided with a mechanism for raising and lowering the second electrode 145.

FIG. 12 schematically shows the configuration of a plasma processing apparatus 1 according to a sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can be operated as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned as the sixth embodiment are those according to the first to fifth embodiments. The plasma processing apparatus 1 according to the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first high-frequency supply units may include a first electrode 106a, a second electrode 135a, and a first balun 103a. The other one of the plurality of first high-frequency supply units may include a first electrode 106b, a second electrode 135b, and a first balun 103b. Here, an example in which the plurality of first high-frequency supply units is configured by two high-frequency supply units will be described. In addition, the two high-frequency supply units and their related components are distinguished from each other by the subscripts a and b. Similarly, the two targets are distinguished from each other by the following symbols a and b.

In another aspect, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, a vacuum container 110, a first electrode 106a and a second electrode 135a, a first electrode 106b, and a second The electrode 135b, the first electrode 141, and the second electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes a plurality of first baluns 103a, 103b, a second balun 303, and a body 10, and the body 10 is provided with a vacuum container 110, a first electrode 106a, and a second electrode 135a. , The first electrode 106b and the second electrode 135b, the first electrode 141, and the second electrode 145. The main body 10 includes first terminals 251a and 251b, second terminals 252a and 252b, third terminals 451, and fourth terminals 452.

The first balun 103a includes a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the side of the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and the side of the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a is A balanced circuit is connected. The first balun 103b includes a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. An unbalanced circuit is connected to the side of the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and the side of the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b is A balanced circuit is connected.

The second balun 303 may have the same structure as the first baluns 103a and 103b. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded.

The first electrodes 106a and 106b hold the targets 109a and 109b, respectively. The targets 109a and 109b are, for example, insulator materials or conductor materials. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first balun 103a and 103b, respectively, and the second electrodes 135a and 135b are electrically connected to the first balun 103a and 103b respectively. The second balanced terminals 212a and 212b.

The first electrode 141 is a holding substrate 112. The second electrode 145 is arranged around the first electrode 141. The first electrode 141 is a first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 is a second balanced terminal 412 electrically connected to the second balun 303.

The above configuration can be understood as the first electrodes 106a, 106b are electrically connected to the first terminals 251a, 251b, respectively, and the second electrodes 135a, 135b are electrically connected to the second terminals 252a, 252b, the first terminals 251a, 251a, 251b is electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, and second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively. Composition. The above configuration can be understood as the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrodes 106a, 106b and the first balanced terminals 211a, 211b (the first terminals 251a, 251b) of the first baluns 103a, 103b can be electrically connected via blocking capacitors 104a, 104b, respectively. The blocking capacitors 104a and 104b are between the first balanced terminals 211a and 211b of the first baluns 103a and 103b and the first electrodes 106a and 106b (or the first balanced terminals 211a, 211b and the first baluns of the first baluns 103a and 103b). 2 Between the balanced terminals 212a and 212b) interrupts the DC current. Instead of blocking capacitors 104a and 104b, the first impedance matching circuits 102a and 102b will block the flow between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b. By means of a direct current. Alternatively, the blocking capacitors 104a and 104b may be disposed between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (the second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrodes 106a and 106b and the second electrodes 135a and 135b are supported by the vacuum container 110 via the insulators 132a and 132b, respectively.

The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 blocks a DC current between the first balanced terminal 411 and the first electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Alternatively, the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (the fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 are supported by the vacuum container 110 via an insulator 142.

The plasma processing apparatus 1 may include a plurality of first high-frequency power sources 101a and 101b, and a first one disposed between the plurality of first high-frequency power sources 101a and 101b and the plurality of first baluns 103a and 103b. Impedance matching circuits 102a and 102b. The first high-frequency power sources 101a and 101b are the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b that supply high frequencies to the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively. between. In other words, the first high-frequency power sources 101a and 101b supply high frequencies to the first electrodes 106a, 106b, and the second electrode via the first impedance matching circuits 102a, 102b, the first baluns 103a, 103b, and the blocking capacitors 104a, 104b, respectively. 135a, 135b. Alternatively, the first high-frequency power sources 101a and 101b are supplied to the first terminal 251a and 251b and the second terminals 252a and 252b of the body 10 via the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. between.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. In other words, the second high-frequency power source 301 supplies a high frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

FIG. 13 schematically shows the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment is operable as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The matters not mentioned in the plasma processing apparatus 1 according to the seventh embodiment are those according to the first to sixth embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 105a and a second electrode 105b constituting the first group, a first electrode 141, and a first electrode constituting the second group. 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode constituting the first group 105b. The first electrode 141 and the second electrode 145 constituting the second group. The main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 is A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the side of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded.

The first electrode 105a of the first group holds the first target 109a, and faces the space on the side of the substrate 112 via the first target 109a. The second electrode 105b of the first group is disposed beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 via the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105a of the first group is a first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105b of the first group is a second balanced terminal electrically connected to the first balun 103 212.

The first electrode 141 of the second group is a holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is a first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is a second balanced terminal electrically connected to the second balun 303 412.

The above structure can be understood as the first electrode 105a of the first group is electrically connected to the first terminal 251, the second electrode 105b of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 is connected to the first balun 103, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. The above configuration can be understood as the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected The first balanced terminal 411 is electrically connected to the second balun 303, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via a blocking capacitor 104a. The blocking capacitor 104a is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 105a of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. The second electrode 105b of the first group and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via a blocking capacitor 104b. The blocking capacitor 104b is shielded between the second balanced terminal 212 of the first balun 103 and the second electrode 105b of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. The first electrode 105a and the second electrode 105b of the first group can be supported by the vacuum container 110 via the insulators 132a and 132b, respectively.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via the insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high-frequency power between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a and 104b. Alternatively, the first high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 105a and the second electrode 105b of the first group are first high-frequency supply units that configure high-frequency supply to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. The second high-frequency power source 301 supplies high-frequency power between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group are the second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the high-frequency supply from the first high-frequency power source 101, in a state where the plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come from the sides. The impedance when looking at the sides of the first electrode 105a and the second electrode 105b (side of the body 10) of the first group is Rp1-jXp1. The reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to satisfy 1.5 ≦ X1 / Rp1 ≦ 5000.

In addition, by the high-frequency supply from the second high-frequency power source 301, in a state where plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 127 and the second electrode 130 of the second group (the side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. The reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, it is favorable to stabilize the potential of the plasma formed in the internal space of the vacuum container 110 to satisfy 1.5 ≦ X2 / Rp2 ≦ 5000.

The plasma processing apparatus 1 according to the seventh embodiment may further include at least one of a mechanism for raising and lowering the first electrode 141 constituting the second group and a mechanism for rotating the first electrode 141 constituting the second group. In the example shown in FIG. 13, the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. Further, in the example shown in FIG. 13, the plasma processing apparatus 1 is provided with a mechanism 314 for raising and lowering the second electrode 145 constituting the second group. Between the vacuum container 110 and the driving mechanisms 114 and 314, a corrugated tube constituting a vacuum partition wall may be provided.

The function of the first balun 103 of the plasma processing apparatus 1 according to the seventh embodiment shown in FIG. 13 will be described with reference to FIG. 14. Let the current flowing through the first unbalanced terminal 201 be I1, let the current flowing through the first balanced terminal 211 be I2, let the current flowing through the second unbalanced terminal 202 be I2 ', and let the current I2 flow The current to ground is set to I3. I3 = 0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit for ground is the best. I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows to ground, the isolation performance of the balanced circuit against ground is the worst. The index ISO showing the degree of such isolation performance is the same as the first to fifth embodiments, and the following formula can be given. Under this definition, the absolute value of ISO is larger and the isolation performance is better. ISO [dB] = 20log (I3 / I2 ’)

In FIG. 14, Rp-jXp (= Rp / 2-jXp / 2 + Rp / 2-jXp / 2) indicates that the plasma is generated from the internal space of the vacuum container 110 from the first balanced terminal 211 and the first 2 The impedance (including the reactance of the blocking capacitors 104a and 104b) when the side of the balanced terminal 212 is viewed from the side of the first electrode 105a and the second electrode 105b (the side of the body 10). Rp is a resistance component, and -Xp is a reactance component. In addition, in FIG. 14, X is a reactance component (inductance component) showing the impedance of the first coil 221 of the first balun 103. ISO is relevant for X / Rp.

FIG. 4 referred to in the description of the first embodiment is an example showing the relationship between the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). The relationship of FIG. 4 is also established in the seventh embodiment. The inventor has found that in the seventh embodiment, it is also advantageous to satisfy 1.5 ≦ X / Rp ≦ 5000 so that the internal space (the space between the first electrode 105a and the second electrode 105b) formed in the vacuum container 110 is favorable. The potential of the plasma (plasma potential) is insensitive to the state of the inner surface of the vacuum container 110. Here, the fact that the plasma potential is insensitive to the state of the inner surface of the vacuum container 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 is equivalent to -10.0dB ≧ ISO ≧ -80dB.

15A to 15D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 15A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110. . 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. ). 15D shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. ). It can be understood from FIGS. 15A to 15D that compliance with 1.5 ≦ X / Rp ≦ 5000 is beneficial for the inner surface of the vacuum container 110 to stabilize the plasma potential in various states.

16A to 16D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110. . FIG. 16B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. ). It can be understood from FIGS. 16A to 16D that when it does not conform to 1.5 ≦ X / Rp ≦ 5000, the plasma potential changes depending on the state of the inner surface of the vacuum container 110.

Here, in the case of X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.16, X / Rp = 0.87), the plasma potential can be easily determined. The state of the inner surface of the vacuum container 110 changes. When X / Rp> 5000, in a state where the film is not formed on the inner surface of the vacuum container 110, a discharge occurs only between the first electrode 105a and the second electrode 105b. However, in the case of X / Rp> 5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential responds sensitively to this, and the results are shown as examples shown in FIGS. 16A to 16D. On the other hand, when X / Rp <1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (electrical characteristics of the film formed on the inner surface) is caused. The effect is significant and the plasma potential will change depending on the film formation. Therefore, as described above, it is advantageous in the case where the plasma processing apparatus 1 is configured so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

FIG. 17 schematically shows the configuration of a plasma processing apparatus 1 according to an eighth embodiment of the present invention. The plasma processing apparatus of the eighth embodiment can be operated as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The matters not mentioned in the plasma processing apparatus 1 according to the eighth embodiment are those according to the first to seventh embodiments. The plasma processing apparatus 1 according to the eighth embodiment includes a balun (first balun) 103, a vacuum container 110, a first electrode 105a, and a second electrode 105b. Alternatively, the plasma processing apparatus 1 may also be understood to include the balun 103 and the main body 10, and the main body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode 105b. The main body 10 includes a first terminal 251 and a second terminal 252.

The first electrode 105a is a first holding surface HS1 capable of holding a first target 109a as a first member, and the second electrode 105b is a second holding surface HS2 capable of holding a second target 109b as a second member. The first holding surface HS1 and the second holding surface HS2 are planes PL that can belong to one.

The plasma processing apparatus 1 according to the eighth embodiment may further include a second balun 303, a third electrode 141, and a fourth electrode 145. In other words, the plasma processing apparatus 1 may include the first balun 103, the second balun 303, the vacuum container 110, the first electrode 105a, the second electrode 105b, the third electrode 141 (substrate holding portion), and the fourth electrode. 145. Or, it can also be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a main body 10. The main body 10 is provided with a vacuum container 110, a first electrode 105a, a second electrode 105b, and a third electrode. 141 and the fourth electrode 145. The main body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 is A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411, and a fourth balanced terminal 412. An unbalanced circuit is connected to the side of the third unbalanced terminal 401 and the fourth unbalanced terminal 402 of the second balun 303, and the side of the third balanced terminal 411 and the fourth balanced terminal 412 of the second balun 303 is A balanced circuit is connected. The vacuum container 110 is grounded. The baluns 103 and 303 may have a structure described in, for example, FIGS. 2A and 2B (FIG. 14).

The first electrode 105a holds the first target 109a and faces the space on the side of the substrate 112 to be processed via the first target 109a. The second electrode 105b is disposed beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105a is a first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105b is a second balanced terminal 212 electrically connected to the first balun 103.

The third electrode 141 functions as a substrate holding portion that holds the substrate 112. The fourth electrode 145 may be disposed around the third electrode 141. The third electrode 141 is a first balanced terminal 411 electrically connected to the second balun 303, and the fourth electrode 145 is a second balanced terminal 412 electrically connected to the second balun 303.

The above configuration can be understood as the first electrode 105a is electrically connected to the first terminal 251, the second electrode 105b is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balun 103. The first balanced terminal 211 and the second terminal 252 are electrically connected to the second balanced terminal 212 of the first balun 103. The above configuration can be understood as the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a and the first balanced terminal 211 (the first terminal 251) of the first balun 103 can be electrically connected via the first path PTH1. A variable reactor 511a may be arranged on the first path PTH1. In other words, the first electrode 105a and the first balanced terminal 211 (the first terminal 251) of the first balun 103 are electrically connectable via the variable reactor 511a. The variable reactor 511a may include a capacitor, which may be used between the first balanced terminal 211 and the first electrode 105a of the first balun 103 (or the first balanced terminal 211 and the first balun 103 of the first balun 103). 2 between balanced terminals 212) blocking capacitor function to block DC current. The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the second path PTH2. A variable reactor 511b may be arranged on the second path PTH2. In other words, the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the variable reactor 511b. The variable reactor 511b may include a capacitor which may be used between the second balanced terminal 212 and the second electrode 105b of the first balun 103 (or the first balanced terminal 211 and the first balun 103 2 between balanced terminals 212) blocking capacitor function to block DC current. The first electrode 105a and the second electrode 105b can be supported by the vacuum container 110 via the insulators 132a and 132b, respectively.

The plasma processing apparatus 1 may include a variable reactor 521a disposed between the first electrode 105a and the ground. The plasma processing apparatus 1 may include a variable reactor 521b disposed between the second electrode 105b and the ground. The plasma processing apparatus 1 may include a variable reactor 530 that connects the first path PTH1 and the second path PTH2.

In one configuration example, the plasma processing apparatus 1 includes (a) an adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b. The varactors 511a, (b) arranged on the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a are varactors 521a, ((a) c) Variable reactors 511b arranged on the second path PTH2 connecting the second balanced terminal 212 and the second electrode 105b, (d) Variable reactors 521b arranged between the second electrode 105b and the ground And (e) at least one of the variable reactors 530 connecting the first path PTH1 and the second path PTH2.

By adjusting the value of the reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, the amount of sputtering of the first target 109a and the first Relation between the amount of sputtering of the target 109b. Alternatively, the balance of the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted by adjusting the value of the adjustment reactor. Thereby, the relationship between the consumption amount of the first target 109a and the consumption amount of the second target 109b can be adjusted. Alternatively, the balance between the consumption amount of the first target 109a and the consumption amount of the second target 109b may be adjusted. Such a configuration, for example, makes the replacement timing of the first target 109a and the replacement timing of the second target 109b the same timing, which is advantageous for reducing the downtime of the plasma processing apparatus 1. The thickness distribution of the film formed on the substrate 112 may be adjusted.

The third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 are electrically connectable via a blocking capacitor 304. The blocking capacitor 304 blocks a DC current between the first balanced terminal 411 and the third electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The third electrode 141 and the fourth electrode 145 can be supported by the vacuum container 110 via the insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the first path PTH1. Alternatively, the first high-frequency power source 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103, the first electrode 105a, and the second electrode 105b are a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power source 301 and a second impedance matching circuit 302 arranged between the second high-frequency power source 301 and the second balun 303. The second high-frequency power supply 301 supplies high frequency to the second balun 303 between the first unbalanced terminal 401 and the second unbalanced terminal 402 via the second impedance matching circuit 302. The second high-frequency power source 301 supplies a high frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high-frequency power source 301 supplies high frequency to the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303, the third electrode 141, and the fourth electrode 145 are a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a driving mechanism 114 that rotates the substrate 112 by rotating the third electrode 141 that functions as a substrate holding portion. The drive mechanism 114 may include an elevating mechanism that elevates the substrate 112 by elevating the third electrode 141 functioning as a substrate holding portion. A corrugated tube 113 constituting a vacuum partition wall may be provided between the vacuum container 110 and the driving mechanism 114.

From the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 in a state where plasma is generated in the internal space of the vacuum container 110 by the high-frequency supply from the first high-frequency power source 101. The impedance when looking at the sides of the first electrode 105a and the second electrode 105b (the side of the body 10) is Rp1-jXp1. The reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, 1.5 ≦ X1 / Rp1 ≦ 5000 is satisfied in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110. However, the condition of 1.5 ≦ X / Rp1 ≦ 5000 is not required in the eighth embodiment, and it is necessary to pay attention to the favorable condition. In the eighth embodiment, by providing the balun 103, the potential of the plasma can be stabilized more than when the balun 103 is not provided. Furthermore, by adjusting the reactor, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. In addition, by forming the film on the substrate 112 while the substrate 112 is rotated by the driving mechanism 114, the thickness variation of the film in the plane of the substrate 112 can be reduced.

In addition, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 will be generated from the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 in a state where plasma is generated in the internal space of the vacuum container 110 by the high-frequency supply from the second high-frequency power source 301. When the side of the third electrode 141 and the fourth electrode 145 (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. The reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, 1.5 ≦ X2 / Rp2 ≦ 5000 is satisfied in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110. However, the condition of 1.5 ≦ X / Rp2 ≦ 5000 is not required in the eighth embodiment, and it is necessary to pay attention to the favorable condition.

Hereinafter, the ninth to fourteenth embodiments of the plasma processing apparatus 1 according to the eighth embodiment will be described with reference to FIGS. 18 to 25, 32A to 32C, and 33A to 33C. FIG. 18 schematically shows the configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention. Matters not mentioned as the ninth embodiment are that the eighth embodiment can be followed. The plasma processing apparatus 1 according to the ninth embodiment includes at least one varactor 511a disposed on the first path PTH1 and at least one varactor 511b disposed on the second path PTH2. Here, it is desirable that the plasma processing apparatus 1 includes both the variable reactor 511a arranged on the first path PTH1 and the variable reactor 511b arranged on the second path PTH2, but either one can be valued. Is a fixed reactance.

The first variable reactor 511a includes at least a variable inductor 601a, and preferably includes a variable inductor 601a and a capacitor 602a. The variable inductor 601a may be disposed between the first balanced terminal 211 (the first terminal 251) and the capacitor 602a, or may be disposed between the capacitor 602a and the first electrode 105a. The second variable reactor 511b includes at least a variable inductor 601b, and preferably includes a variable inductor 601b and a capacitor 602b. The variable inductor 601b may be disposed between the second balanced terminal 212 (the second terminal 252) and the capacitor 602b, or may be disposed between the capacitor 602b and the second electrode 105b.

The plasma processing apparatus 1 may include a driving mechanism 114 that rotates the substrate 112 by rotating the third electrode 141 that functions as a substrate holding portion. The drive mechanism 114 may include an elevating mechanism that elevates the substrate 112 by elevating the third electrode 141 functioning as a substrate holding portion. A corrugated tube 113 constituting a vacuum partition wall may be provided between the vacuum container 110 and the driving mechanism 114.

FIG. 24 shows the case where the value of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 is set to 200 nH in the plasma processing apparatus 1 of the ninth embodiment. The thickness distribution of the film on the substrate 112. 24 shows the case where the value of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 is set to 400 nH in the plasma processing apparatus 1 of the ninth embodiment. The thickness distribution of the film formed on the substrate 112. The horizontal axis is a position in the horizontal direction (direction parallel to the surface of the substrate 112) of FIG. 18, and represents a distance from the center of the substrate 112. When the values of the variable inductors 601a and 601b are 400 nH, the thickness distribution of the film is greatly different on the left and right sides of the center of the substrate 112. On the other hand, when the values of the variable inductors 601a and 601b are 200 nH, the symmetry of the thickness distribution of the film is high on the left and right sides of the center of the substrate 112. The balance between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is that when the value of the variable inductors 601a and 601b is 200nH, the value of the variable inductors 601a and 601b is 400nH. Better.

FIG. 25 shows the first electrode when the values of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are changed in the plasma processing apparatus 1 of the ninth embodiment. 105a and the voltage of the second electrode 105b. When the values of the variable inductors 601a and 601b are approximately 225 nH, the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b become substantially equal.

32A to 32C show an example in which the TS distance between the substrate 112 and the targets 109a and 109b (distance in the vertical direction) is 120 mm, 105 mm, and 100 mm in the plasma processing apparatus 1 according to the ninth embodiment. A thickness distribution of a film disposed on the substrate 112. Here, FIG. 32A is the thickness distribution of the film formed on the substrate 112 when the TS distance is 120 mm, FIG. 32B is the thickness distribution of the film formed on the substrate 112 when the TS distance is 105 mm, and FIG. 32C is the TS The thickness distribution of the film formed on the substrate 112 when the distance is 100 mm. The film formation on the substrate 112 is performed by the driving mechanism 110 while rotating the substrate 112.

33A to 33C show an example in which the plasma processing apparatus 1 according to the ninth embodiment is formed on a substrate when the TS distance is 110 mm and the value of the variable inductor 601a is 200 nH, 400 nH, and 300 nH. The film thickness distribution of 112. Here, FIG. 33A shows the thickness distribution of the film formed on the substrate 112 when the value of the variable inductor 601a is 200 nH, and FIG. 33B shows the thickness distribution of the film formed when the value of the variable inductor 601a is 400 nH. For the thickness distribution of the film on the substrate 112, FIG. 33C shows the thickness distribution of the film formed on the substrate 112 when the value of the variable inductor 601a is 300 nH.

In FIGS. 33A to 33C, when the value of the variable inductor 601a is 300 nH, the thickness deviation of the film formed on the substrate 112 is minimized. From the results shown in FIG. 25, when the value of the variable inductor 601 a is 225 nH, the voltage applied to the first electrode 105 a and the voltage applied to the second electrode 105 b become approximately equal. On the other hand, from the results shown in FIGS. 33A to 33C, it can be seen that when the value of the variable inductor 601 a is 300 nH, the thickness deviation of the film formed on the substrate 112 is minimized. From this, it can be understood that when the substrate 112 is rotated, when the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b are substantially equal, the thickness deviation of the film formed on the substrate 112 may not be minimized. Therefore, when forming the film while rotating the substrate 112, the value of the variable inductor 601a should be determined so that the thickness deviation of the film formed on the substrate 112 will be minimized. The value of the variable inductor 601a can be determined through experiments or simulations.

FIG. 19 schematically illustrates the configuration of a plasma processing apparatus 1 according to a tenth embodiment of the present invention. Matters not mentioned as the tenth embodiment are that the eighth embodiment can be followed. The plasma processing apparatus 1 according to the tenth embodiment includes at least one varactor 511a disposed on the first path PTH1 and at least one varactor 511b disposed on the second path PTH2. Here, it is desirable that the plasma processing apparatus 1 includes both the variable reactor 511a arranged on the first path PTH1 and the variable reactor 511b arranged on the second path PTH2, but either one can be valued. Is a fixed reactance.

The first variable reactor 511a includes at least a variable capacitor 604a, and preferably includes a variable capacitor 604a and an inductor 603a. The variable capacitor 604a may be disposed between the inductor 603a and the first electrode 105a, or may be disposed between the first balanced terminal 211 (first terminal 251) and the inductor 603a. The second variable reactor 511b includes at least a variable capacitor 604b, and preferably includes a variable capacitor 604b and an inductor 603b. The variable capacitor 604b may be disposed between the inductor 603b and the second electrode 105b, or may be disposed between the second balanced terminal 212 (the second terminal 252) and the inductor 603b.

FIG. 20 schematically shows the configuration of a plasma processing apparatus 1 according to an eleventh embodiment of the present invention. Matters not mentioned as the eleventh embodiment are that the eighth embodiment can be followed. The plasma processing apparatus 1 according to the eleventh embodiment includes a variable capacitor 605a as a variable reactor 521a arranged between the first electrode 105a and the ground, and a variable capacitor 605a arranged as the second electrode 105b and the ground. At least one variable capacitor 605b of the variable reactor 521b. The plasma processing apparatus 1 may further include a reactance (in this example, an inductor 603a and a capacitor 602a) disposed in the first path PTH1 and a reactance (in this example, an inductor 603b) disposed in the second path PTH2. Capacitor 602b).

FIG. 21 schematically shows the configuration of a plasma processing apparatus 1 according to a twelfth embodiment of the present invention. Matters not mentioned as the twelfth embodiment are that the eighth embodiment can be followed. The plasma processing apparatus 1 according to the twelfth embodiment includes a variable reactor 521a disposed between the first electrode 105a and the ground, and a variable reactor disposed between the second electrode 105b and the ground. At least one of 521b. The variable reactor 521a includes at least a variable inductor 607a, and may include, for example, a variable inductor 607a and a capacitor 606a. The variable reactor 521b includes at least a variable inductor 607b, and may include, for example, a variable inductor 607b and a capacitor 606b.

The plasma processing apparatus 1 may further include a reactance (in this example, an inductor 603a and a capacitor 602a) disposed in the first path PTH1 and a reactance (in this example, an inductor 603b) disposed in the second path PTH2. Capacitor 602b).

FIG. 22 schematically shows the configuration of a plasma processing apparatus 1 according to a thirteenth embodiment of the present invention. Matters not mentioned as the thirteenth embodiment are that the eighth embodiment can be followed. The plasma processing apparatus 1 according to the thirteenth embodiment includes a variable inductor 608 as a varactor 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include a reactance (in this example, an inductor 603a and a capacitor 602a) disposed in the first path PTH1 and a reactance (in this example, an inductor 603b) disposed in the second path PTH2. Capacitor 602b).

FIG. 23 schematically shows the configuration of a plasma processing apparatus 1 according to a fourteenth embodiment of the present invention. Matters not mentioned as the fourteenth embodiment are that the eighth embodiment can be followed. The plasma processing apparatus 1 according to the fourteenth embodiment includes a variable capacitor 609 as a variable reactor 530 that connects the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include a reactance (in this example, an inductor 603a and a capacitor 602a) disposed in the first path PTH1 and a reactance (in this example, an inductor 603b) disposed in the second path PTH2. Capacitor 602b).

Hereinafter, the operation of adjusting the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. 26 to 31. FIG. 26 schematically shows the configuration of a plasma processing apparatus 1 according to a fifteenth embodiment of the present invention. The plasma processing apparatus 1 according to the fifteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the ninth embodiment shown in FIG. 18. The control unit 700 adjusts the value of the adjustment reactor such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. For example, the control unit 700 generates the values of the variable inductors 601a and 601b so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. The first command value CNT1 and the second command value CNT2. The target values V1T and V2T are intended to be set to a thickness of a film to be formed on the substrate 112 and are subject to a target deviation.

FIG. 27 schematically shows the configuration of a plasma processing apparatus 1 according to a sixteenth embodiment of the present invention. The plasma processing apparatus 1 according to the sixteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the tenth embodiment shown in FIG. 19. The control unit 700 adjusts the value of the adjustment reactor such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. For example, the control unit 700 generates the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b to form target values V1T and V2T, respectively. 1 command value CNT1, second command value CNT2. The target values V1T and V2T are intended to be set to a thickness of a film to be formed on the substrate 112 and are subject to a target deviation.

FIG. 28 schematically shows the configuration of a plasma processing apparatus 1 according to a seventeenth embodiment of the present invention. The plasma processing apparatus 1 according to the seventeenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the eleventh embodiment shown in FIG. 20. The control unit 700 adjusts the value of the adjustment reactor such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. For example, the control unit 700 generates the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b to form target values V1T and V2T, respectively. 1 command value CNT1, second command value CNT2. The target values V1T and V2T are intended to be set to a thickness of a film to be formed on the substrate 112 and are subject to a target deviation.

FIG. 29 schematically shows a configuration of a plasma processing apparatus 1 according to an eighteenth embodiment of the present invention. The plasma processing apparatus 1 according to the eighteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the twelfth embodiment shown in FIG. 21. The control unit 700 adjusts based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 and the second voltage V2 will form target values V1T and V2T, respectively. Reactor value adjustment. For example, the control unit 700 generates the values of the variable inductors 607a and 607b so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. The first command value CNT1 and the second command value CNT2. The target values V1T and V2T are intended to be set to a thickness of a film to be formed on the substrate 112 and are subject to a target deviation.

FIG. 30 schematically illustrates the configuration of a plasma processing apparatus 1 according to a nineteenth embodiment of the present invention. The plasma processing apparatus 1 according to the nineteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the thirteenth embodiment shown in FIG. 22. The control unit 700 adjusts the value of the adjustment reactor such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. For example, the control unit 700 generates a command value for adjusting the value of the variable inductor 608 such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. CNT. The target values V1T and V2T are intended to be set to a thickness of a film to be formed on the substrate 112 and are subject to a target deviation.

FIG. 31 schematically shows the configuration of a plasma processing apparatus 1 according to a twentieth embodiment of the present invention. The plasma processing apparatus 1 according to the twentieth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the fourteenth embodiment shown in FIG. 23. The control unit 700 adjusts the value of the adjustment reactor such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. For example, the control unit 700 generates a command value CNT for adjusting the value of the variable capacitor 609 such that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b form target values V1T and V2T, respectively. The target values V1T and V2T are intended to be set to a thickness of a film to be formed on the substrate 112 and are subject to a target deviation.

In the fifteenth to twentieth embodiments described with reference to FIGS. 26 to 31, the control unit 700 forms target values V1T and V2T with the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Way, the value of the reactor will be adjusted. Instead of such a configuration, the control unit 700 may be configured to adjust the adjustment reactor based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b. The plasma intensity in the vicinity of the first electrode 105a can be detected by, for example, a photoelectric conversion device. Similarly, the intensity of the plasma in the vicinity of the second electrode 105b can be detected by, for example, a photoelectric conversion device. The control unit 700 may be configured to adjust the value of the adjustment reactor so that the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b form target values, respectively.

Next, a plasma processing method as a twenty-first embodiment of the present invention will be described. The plasma processing method according to the twenty-first embodiment is to process the substrate 112 in the plasma processing apparatus 1 according to any one of the eighth to twentieth embodiments. This plasma processing method may include a process of adjusting an adjustment reactor so that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted, and After this process, a process in which the substrate 112 is processed while being rotated by the driving mechanism 114 is performed. This process may include a process of forming a film on the substrate 112 by sputtering, or a process of etching the substrate 112.

The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, in order to make the scope of the present invention public, the following claims are attached.

1‧‧‧ Plasma treatment device

10‧‧‧ Ontology

101‧‧‧High Frequency Power

102‧‧‧Impedance matching circuit

103‧‧Barron

104‧‧‧ blocking capacitor

106‧‧‧The first electrode

107, 108‧‧‧ insulator

109‧‧‧Target

110‧‧‧Vacuum container

111‧‧‧Second electrode

112‧‧‧ substrate

201‧‧‧The first unbalanced terminal

202‧‧‧The second unbalanced terminal

211‧‧‧The first balanced terminal

212‧‧‧Second balanced terminal

251‧‧‧The first terminal

252‧‧‧ 2nd terminal

221‧‧‧The first coil

222‧‧‧The second coil

223‧‧‧3rd coil

224‧‧‧4th coil

511a, 511b, 521a, 521b, 530‧‧‧Reactors

700‧‧‧ Control Department

FIG. 1 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. FIG. 2A is a diagram showing a configuration example of a balun. FIG. 2B is a diagram showing another configuration example of the balun. FIG. 3 is a diagram illustrating the function of the balun 103. FIG. 4 is a diagram illustrating the relationship among the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp) by way of example. FIG. 5A is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 5B is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. C FIG. 5C is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 5D is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 6A is a diagram showing a result of simulating plasma potential and cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6B is a diagram showing a result of simulating a plasma potential and a cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6C is a diagram showing a result of simulating plasma potential and cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6D is a diagram showing the results of simulating plasma potential and cathode potential when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 7 is a diagram illustrating a method of confirming Rp-jXp. 8 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a second embodiment of the present invention. 9 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention. 10 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a fourth embodiment of the present invention. 11 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a fifth embodiment of the present invention. Fig. 12 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a sixth embodiment of the present invention. 13 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. FIG. 14 is a diagram illustrating the function of a balun according to a seventh embodiment of the present invention. FIG. 15A is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 15B is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. C FIG. 15C is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. 15D is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is satisfied. 16A is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 16B is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 16C is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 16D is a diagram showing a result of simulating a plasma potential and two cathode potentials when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. 17 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to an eighth embodiment of the present invention. FIG. 18 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention. Fig. 19 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a tenth embodiment of the present invention. FIG. 20 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to an eleventh embodiment of the present invention. Fig. 21 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twelfth embodiment of the present invention. 22 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a thirteenth embodiment of the present invention. Fig. 23 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a fourteenth embodiment of the present invention. FIG. 24 is a diagram illustrating the function of the plasma processing apparatus 1 according to a ninth embodiment of the present invention. Fig. 25 is a diagram illustrating the function of the plasma processing apparatus 1 according to a ninth embodiment of the present invention. Fig. 26 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a fifteenth embodiment of the present invention. Fig. 27 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a sixteenth embodiment of the present invention. Fig. 28 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a seventeenth embodiment of the present invention. Fig. 29 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to an eighteenth embodiment of the present invention. FIG. 30 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a nineteenth embodiment of the present invention. Fig. 31 is a diagram schematically showing a configuration of a plasma processing apparatus 1 according to a twentieth embodiment of the present invention. FIG. 32A is a diagram illustrating a thickness distribution of a film formed on a substrate when a TS distance is 120 mm in a plasma processing apparatus 1 according to a ninth embodiment of the present invention. FIG. 32B is a diagram illustrating a thickness distribution of a film formed on a substrate when a TS distance is 105 mm in a plasma processing apparatus 1 according to a ninth embodiment of the present invention. FIG. 32C is a diagram illustrating a thickness distribution of a film formed on a substrate when a TS distance is 100 mm in a plasma processing apparatus 1 according to a ninth embodiment of the present invention. FIG. 33A shows an example of the thickness distribution of a film formed on a substrate when the TS distance is 110 mm and the value of the variable inductor is 200 nH in the plasma processing apparatus 1 according to the ninth embodiment of the present invention. Illustration. FIG. 33B shows an example of the thickness distribution of the film formed on the substrate when the TS distance is 110 mm and the value of the variable inductor is 400 nH in the plasma processing apparatus 1 according to the ninth embodiment of the present invention. Illustration. FIG. 33C shows an example of the thickness distribution of the film formed on the substrate when the TS distance is 110 mm and the value of the variable inductor is 300 nH in the plasma processing apparatus 1 according to the ninth embodiment of the present invention. Illustration.

Claims (20)

A plasma processing apparatus, comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal; 接地 a grounded vacuum container; electrically connected to the aforementioned first 1 the first electrode of the balanced terminal; the second electrode electrically connected to the second balanced terminal; the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode An adjustment reactor; (ii) a substrate holding portion that holds the substrate; and a driving mechanism that rotates the substrate holding portion. For example, the plasma processing apparatus according to the first item of the patent application, wherein: the first electrode has a first holding surface for holding the first member, the second electrode has a second holding surface for holding the second member, the foregoing The first holding surface and the second holding surface belong to one plane. For example, the plasma processing device in the first scope of the patent application, wherein: the first electrode holds the first target, the second electrode holds the second target, and the first electrode passes through the first target. It is opposed to the space on the side of the substrate, and the second electrode is opposed to the space through the second target. For example, the plasma processing device of the third scope of the patent application, wherein the aforementioned adjusting reactor includes: (a) a variable reactor arranged on a first path connecting the first balanced terminal and the first electrode; (B) a variable reactor arranged between the first electrode and the ground, (c) a variable reactor arranged on a second path connecting the second balanced terminal and the second electrode, (d) at least one variable reactor arranged between the second electrode and the ground, and (e) at least one variable reactor connecting the first path and the second path. For example, the plasma processing device of the third item of the patent application, wherein the adjustment reactor includes a first variable reactor arranged on a first path connecting the first balanced terminal and the first electrode, And at least one second variable reactor arranged on a second path connecting the second balanced terminal and the second electrode. For example, the plasma processing device of the fifth item of the patent application, wherein: the first variable reactor includes a variable inductor, and the second variable reactor includes a variable inductor. For example, the plasma processing device of the fifth item of the patent application, wherein: the first variable reactor includes a variable capacitor, and the second variable reactor includes a variable capacitor. For example, the plasma processing device in the third scope of the patent application, wherein the adjustment reactor includes a third variable reactor arranged on a third path connecting the first electrode to the ground and a third variable reactor arranged on the third path. At least one of the fourth variable reactors connecting the second electrode and the fourth path to the ground. For example, the plasma processing device according to the eighth aspect of the patent application, wherein: the third variable reactor includes a variable capacitor, and the fourth variable reactor includes a variable capacitor. For example, the plasma processing device according to the eighth aspect of the patent application, wherein: the third variable reactor includes a variable inductor, and the fourth variable reactor includes a variable inductor. For example, the plasma processing device of the third scope of the patent application, wherein the aforementioned adjusting reactor includes a variable reactor connecting the first path and the second path, and the first path connects the first balanced terminal and the foregoing The first electrode and the second path connect the second balanced terminal and the second electrode. For example, the plasma processing device according to item 11 of the application, wherein the variable reactor includes a variable inductor. For example, the plasma processing device according to item 11 of the patent application range, wherein the variable reactor includes a variable capacitor. For example, the plasma processing apparatus according to item 1 of the patent application scope further includes a control unit for controlling the adjustment reactor based on the voltage of the first electrode and the voltage of the second electrode. For example, the plasma processing apparatus according to item 1 of the patent application scope further includes a control unit for controlling the adjustment reactor based on the plasma strength near the first electrode and the plasma strength near the second electrode. For example, the plasma processing apparatus of the first scope of the patent application, wherein the first balanced terminal when the side of the first electrode and the second electrode is viewed from the side of the first balanced terminal and the second balanced terminal. When the resistance component between the second balanced terminal and Rp is set, and the inductance between the first unbalanced terminal and the first balanced terminal is set to X, 1.5 ≦ X / Rp ≦ 5000 is satisfied. For example, the plasma processing device of the first scope of the patent application, wherein the balun includes a first coil that connects the first unbalanced terminal and the first balanced terminal, and a second coil that connects the second unbalanced terminal and the aforementioned The second coil of the second balanced terminal. For example, the plasma processing device according to item 17 of the patent application, wherein the balun further includes: a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal; The three coils and the fourth coil are configured such that a voltage at a connection node between the third coil and the fourth coil is used as a midpoint between the voltage of the first balanced terminal and the voltage of the second balanced terminal. For example, the plasma processing device of the scope of application for patent No. 1 further includes: a high-frequency power supply; and an impedance matching circuit arranged between the high-frequency power supply and the balun. A plasma processing method is a plasma processing method for processing a substrate in a plasma processing apparatus. The plasma processing apparatus includes: (1) having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balance; The balun of the terminal; 接地 a grounded vacuum container; 第 a first electrode electrically connected to the first balanced terminal; a second electrode electrically connected to the second balanced terminal; 前述 influence on the first electrode A reactor for adjusting the relationship between the first voltage and the second voltage applied to the second electrode; a substrate holding portion that holds the substrate; and a driving mechanism that rotates the substrate holding portion; 特征 its characteristics include: The adjustment method adjusts the aforementioned process of adjusting the reactor; and after the aforementioned process, the aforementioned substrate is processed while being rotated by the aforementioned driving mechanism.