TW202001978A - Plasma treatment device, plasma treatment method, program, and memory medium - Google Patents

Abstract

This plasma treatment device is provided with: an impedance matching circuit; a balun which has a first unbalanced terminal that is connected to the impedance matching circuit, a second unbalanced terminal that is grounded, a first balanced terminal, and a second balanced terminal; a grounded vacuum container; a first electrode which is electrically connected to the first balanced terminal; a second electrode which is electrically connected to the second balanced terminal; an adjustment reactance which influences the relationship between a first voltage to be applied to the first electrode and a second voltage to be applied to the second electrode; a high-frequency power source which generates high-frequency waves that are supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit; and a control unit which controls impedance of the impedance matching circuit and reactance of the adjustment reactance.

Description

Plasma processing device, plasma processing method, program and memory medium

The invention relates to a plasma processing device, a plasma processing method, a program and a memory medium.

Patent Document 1 describes that it includes: a high-frequency transformer (Tr7), a matching device (MB7), a vacuum container (10), a first target (T5), a second target (T6), a high-frequency voltage generator (OSC5), Sputtering device for voltage amplifier (PA5), substrate holder (21) and motor (22). In the sputtering apparatus described in Japanese Patent Laid-Open No. 2-15680, the voltages of two targets (T5, T6) depend on the plasma generation conditions and the like, and are parameters that cannot be adjusted. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2-15680

The present invention is based on the knowledge of the above-mentioned problems and was developed by a developer to provide an advantageous technique for adjusting the voltages of two electrodes for generating plasma.

The first aspect of the present invention relates to a plasma processing device. The plasma processing device includes: Impedance matching circuit; The balun has: a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal; The vacuum container is grounded; The first electrode is electrically connected to the first balanced terminal; The second electrode is electrically connected to the second balanced terminal; Adjusting the reactor affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; A high-frequency power supply, which generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit; and The control unit controls the impedance of the impedance matching circuit and the reactance of the adjustment reactor.

The second aspect of the present invention relates to a plasma processing method for processing a substrate in a plasma processing apparatus. The plasma processing apparatus includes: Impedance matching circuit; The balun has: a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal; The vacuum container is grounded; The first electrode is electrically connected to the first balanced terminal; The second electrode is electrically connected to the second balanced terminal; Adjusting the reactor, which affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; and A high-frequency power supply, which generates high frequency supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit; The foregoing plasma processing method includes: The matching process is to control the impedance of the impedance matching circuit in such a way that it can match the impedance when viewing the side of the first electrode and the second electrode from the side of the first balanced terminal and the second balanced terminal; Adjustment engineering, which is to adjust the aforementioned adjustment reactor in such a way as to adjust the aforementioned relationship; and The processing process is to process the substrate after the adjustment process.

A third aspect of the present invention relates to a plasma processing apparatus. The plasma processing apparatus includes: Impedance matching circuit; The balun has: a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal; The vacuum container is grounded; The first electrode is electrically connected to the first balanced terminal; The second electrode is electrically connected to the second balanced terminal; Adjusting the reactor affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; A high-frequency power supply, which generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit; and A measuring unit that measures the voltage of the first electrode and the voltage of the second electrode, The reactance of the adjustment reactor is adjusted according to the voltage of the first electrode and the voltage of the second electrode measured by the measurement unit.

Hereinafter, the present invention will be described with reference to the accompanying drawings through exemplary embodiments thereof.

FIG. 1 schematically shows the configuration of the plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balanced unbalanced conversion circuit) 103, a vacuum container 110, a first electrode 106, and a second electrode 111. Or, it may be understood that the plasma processing apparatus 1 includes a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 106, and a second electrode 111. The body 10 has a first terminal 251 and a second terminal 252. The first electrode 106 may be arranged to separate the vacuum space and the external space together with the vacuum vessel 110 (that is, constitute a part of the vacuum partition), or may be arranged in the vacuum vessel 110. The second electrode 111 may be arranged to separate the vacuum space and the external space together with the vacuum vessel 110 (that is, form a part of the vacuum partition), or may be arranged in the vacuum vessel 110.

The balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103 . The vacuum container 110 is composed of a conductor and is grounded.

In the first embodiment, the first electrode 106 is a cathode, and holds the target 109. The target 109 is, for example, an insulator material or a conductor material. Furthermore, in the first embodiment, the second electrode 111 is an anode, and holds the substrate 112. The plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering of the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The first electrode 106 and the first balanced terminal 211 are electrically connected to mean that a current can flow between the first electrode 106 and the first balanced terminal 211, and the first electrode 106 and the first balanced terminal 211 are configured between There is a current path. Similarly, in this specification, a and b are electrically connected to mean that a current path is formed between a and b in such a way that current can flow between a and b.

The above configuration can also be understood as that the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211, The second terminal 252 is electrically connected to the second balanced terminal 212.

In the first embodiment, the first electrode 106 and the first balanced terminal 211 (first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks the direct current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of the blocking capacitor 104, the impedance matching circuit 102 described below blocks the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 can be supported by the vacuum container 110 via the insulator 107. The second electrode 111 may be supported by the vacuum container 110 via the insulator 108. Or, an insulator 108 may be arranged between the second electrode 111 and the vacuum container 110.

The plasma processing apparatus 1 may further include a high-frequency power source 101 and an impedance matching circuit 102 disposed between the high-frequency power source 101 and the balun 103. The high-frequency power supply 101 supplies high-frequency (high-frequency current, high-frequency voltage, high-frequency power) via the impedance matching circuit 102 between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103. In other words, the high-frequency power supply 101 supplies high-frequency (high-frequency current, high-frequency voltage, and high-frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. Or, it can be understood that the high-frequency power supply 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the impedance matching circuit 102 and the balun 103.

In the internal space of the vacuum container 110, a gas (for example, Ar, Kr, or Xe gas) is supplied via a gas supply unit (not shown) provided in the vacuum container 110. In addition, between the first electrode 106 and the second electrode 111, the high frequency power is supplied by the high frequency power source 101 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104. As a result, plasma is generated between the first electrode 106 and the second electrode 111, and a self-bias voltage is generated on the surface of the target 109. The ions in the plasma collide with the surface of the target 109 and are emitted from the target 109 Particles of the material that constitutes that. Then, a film is formed on the substrate 112 by using the particles.

FIG. 2A shows a configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 that connects the second unbalanced terminal 202 and the second balanced terminal 212. The first coil 221 and the second coil 222 are the same number of coils and share an iron core.

FIG. 2B shows another configuration example of the balun 103. The balun 103 shown in FIG. 2B includes a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 222 connecting the second unbalanced terminal 202 and the second balanced terminal 212 . The first coil 221 and the second coil 222 are the same number of coils and share an iron core. In addition, the balun 103 shown in FIG. 2B further includes the third coil 223 and the fourth coil 224, and the third coil 223 and the fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212. It is configured such that the voltage of the connection node 213 of the third coil 223 and the fourth coil 224 is the midpoint between the voltage of the first balanced terminal 211 and the voltage of the second balanced terminal 212. The third coil 223 and the fourth coil 224 are the same number of coils and share an iron core. The connection node 213 can also be grounded, connected to the vacuum container 110, or floated.

3, the function of the balun 103 will be described. Let the current flowing through the first unbalanced terminal 201 be I1, the current flowing through the first balanced terminal 211 be I2, the current flowing through the second unbalanced terminal 202 be I2', and the current I2 flow The current to ground is set to I3. I3=0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit to ground is optimal. I3=I2, that is, when all the current I2 flowing through the first balanced terminal 211 flows to the ground, the isolation performance of the balanced circuit from the ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following formula. Under this definition, the absolute value of the ISO value is larger, and the isolation performance is better.

在圖3中，Rp-jXp是表示在真空容器110的內部空間產生電漿的狀態下，從第1平衡端子211及第2平衡端子212的側來看第1電極106及第2電極111的側(本體10的側)時的阻抗(包含阻塞電容器104的電抗)。Rp是表示電阻成分，-Xp是表示電抗成分。並且，在圖3中，X是表示巴倫103的第1線圈221的阻抗的電抗成分(電感成分)。ISO是對於X/Rp具有相關性。

In FIG. 3, Rp-jXp indicates that the first electrode 106 and the second electrode 111 are viewed from the sides of the first balanced terminal 211 and the second balanced terminal 212 in a state where plasma is generated in the internal space of the vacuum container 110. Impedance (including the reactance blocking the capacitor 104) at the side (the side of the body 10). Rp represents the resistance component, and -Xp represents the reactance component. In addition, in FIG. 3, X is a reactance component (inductance component) indicating the impedance of the first coil 221 of the balun 103. ISO is relevant for X/Rp.

Fig. 4 shows an example of the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The present inventors found that the configuration in which high frequency power is supplied from the high-frequency power source 101 to the first electrode 106 and the second electrode 111 via the balun 103. In particular, in this configuration, 1.5≦X/Rp≦5000 is advantageous for The potential of the plasma (plasma potential) formed in the internal space of the vacuum container 110 (the space between the first electrode 106 and the second electrode 111) is insensitive to the state of the inner surface of the vacuum container 110. Here, the plasma potential has a dull effect on the state of the inner surface of the vacuum container 110, which means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 is equivalent to -10.0dB≧ISO≧-80dB.

5A to 5D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5≦X/Rp≦5000. FIG. 5A is a diagram showing the plasma potential and the cathode potential in a state where no film is formed on the inner surface of the vacuum container 110. FIG. 5B is a diagram showing the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. 5C is a diagram showing the plasma potential and the cathode potential in the state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 5D is a diagram showing the plasma potential and the cathode potential in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. As can be understood from FIGS. 5A to 5D, compliance with 1.5≦X/Rp≦5000 is advantageous for stabilizing the plasma potential in various states for the inner surface of the vacuum container 110.

FIGS. 6A to 6D show the results of simulation of the plasma potential and the potential of the first electrode 106 (cathode potential) when 1.5≦X/Rp≦5000. 6A is a diagram showing the plasma potential and the cathode potential in a state where no film is formed on the inner surface of the vacuum container 110. FIG. 6B is a diagram showing the plasma potential and the cathode potential in a state where a resistive film (1000 Ω) is formed on the inner surface of the vacuum container 110. 6C is a diagram showing the plasma potential and the cathode potential in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. 6D is a plasma potential and a cathode potential showing a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. FIG. As can be understood from FIGS. 6A to 6D, when 1.5≦X/Rp≦5000 is not satisfied, the plasma potential changes according to the state of the inner surface of the vacuum container 110.

Here, in both the case of X/Rp>5000 (for example, X/Rp=∞) and the case of X/Rp<1.5 (for example, X/Rp=1.0, X/Rp=0.5), the plasma potential will easily depend on The state of the inner surface of the vacuum container 110 changes. When X/Rp>5000, a film is not formed on the inner surface of the vacuum container 110, and discharge occurs only between the first electrode 106 and the second electrode 111. However, in the case of X/Rp>5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential will sensitively react to this, resulting in the results shown in the examples shown in FIGS. 6A to 6D. On the other hand, when X/Rp<1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (which is caused by the electrical characteristics of the film formed on the inner surface) The effect of is significant, and the plasma potential will vary depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

Referring to FIG. 7, an example of a determination method of Rp-jXp (the only person who actually wants to know is Rp) is shown. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the body 10. Then, the second terminal 252 (second electrode 111) of the body 10 is grounded. In this state, high-frequency power is supplied from the high-frequency power source 101 to the first terminal 251 of the main body 10 via the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently constituted by the coils L1 and L2 and the variable capacitors VC1 and VC2. The plasma can be generated by adjusting the capacitance values of the variable capacitors VC1 and VC2. In the state where the plasma is stable, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 (the side of the first electrode 106 and the second electrode 111) at the time of plasma generation. The impedance of the impedance matching circuit 102 at this time is Rp+jXp.

Therefore, Rp-jXp can be obtained based on the impedance Rp+jXp of the impedance matching circuit 102 at the time of impedance matching (the actual knowledge is Rp only). Rp-jXp is other, which can be obtained by simulation based on design data, for example.

Based on the Rp thus obtained, X/Rp can be specified. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5≦X/Rp≦5000.

FIG. 8 schematically shows the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. The plasma processing apparatus 1 of the second embodiment is operable as an etching apparatus for etching the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. Furthermore, in the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 of the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 of the second embodiment, the blocking capacitor 104 is arranged in the electrical connection path between the first electrode 106 and the first balanced terminal 211.

FIG. 9 schematically shows the configuration of the plasma processing apparatus 1 according to the third embodiment of the present invention. The plasma processing apparatus 1 of the third embodiment is a modified example of the plasma processing apparatus 1 of the first embodiment, and further includes at least one of a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9, the plasma processing apparatus 1 is a drive mechanism 114 including both a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall may be provided.

Similarly, the plasma processing apparatus 1 of the second embodiment may further include at least one of a mechanism for raising and lowering the first electrode 106 and a mechanism for rotating the second electrode 106.

FIG. 10 schematically shows the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the fourth embodiment is that the first to third embodiments can be followed. The plasma processing apparatus 1 includes: a first balun 103, a second balun 303, a vacuum container 110, a first electrode 106 and a second electrode 135 constituting the first group, and a first electrode 141 and a second electrode constituting the second group 2electrode 145. Or, it can also be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 106 and a second electrode constituting the first group 135. The first electrode 141 and the second electrode 145 constituting the second group. The body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 are connected Balanced circuit. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 are connected to Balanced circuit. The vacuum container 110 is grounded.

The first electrode 106 of the first group is the holding target 109. The target 109 is, for example, an insulator material or a conductor material. The second electrode 135 of the first group is arranged around the first electrode 106. The first electrode 106 of the first group is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 135 of the first group is the second balanced terminal electrically connected to the first balun 103 212. The first electrode 141 of the second group is the holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is the second balanced terminal electrically connected to the second balun 303 412.

The above configuration is understood that the first electrode 106 of the first group is electrically connected to the first terminal 251, the second electrode 135 of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically The first balanced terminal 211 of the first balun 103 is connected, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is The first balanced terminal 411 of the second balun 303 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 106 of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104. The blocking capacitor 104 is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. Instead of the blocking capacitor 104, the first impedance matching circuit 102 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. The first electrode 106 and the second electrode 135 of the first group can be supported by the vacuum container 110 via the insulator 132.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303) Break DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via the insulator 142.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power supply 101 supplies high-frequency between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103 via the first impedance matching circuit 102. In other words, the first high-frequency power source 101 supplies high-frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103, and the blocking capacitor 104. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 106 and the second electrode 135 of the first group constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 106 and the second electrode 135 (the side of the body 10) of the first group is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

In addition, with the supply of high frequency from the second high-frequency power supply 301, in the state where plasma is generated in the internal space of the vacuum vessel 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 141 and the second electrode 145 of the second group (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is beneficial to stabilize the potential of the plasma formed in the internal space of the vacuum container 110.

FIG. 11 schematically shows the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. The device 1 of the fifth embodiment is configured to have additional drive mechanisms 114 and 314 compared to the plasma processing device 1 of the fourth embodiment. The drive mechanism 114 may include at least one of a mechanism that raises and lowers the first electrode 141 and a mechanism that rotates the first electrode 141. The drive mechanism 314 can be provided with a mechanism for raising and lowering the second electrode 145.

FIG. 12 schematically shows the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. As the matters not mentioned in the sixth embodiment, the first to fifth embodiments can be followed. The plasma processing apparatus 1 of the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first high-frequency supply units may include the first electrode 106a, the second electrode 135a, and the first balun 103a. The other one of the plurality of first high-frequency supply units may include the first electrode 106b, the second electrode 135b, and the first balun 103b. Here, an example in which the plural first high-frequency supply units are configured by two high-frequency supply units will be described. In addition, the two high-frequency supply units and their associated components are distinguished from each other by the subscripts a and b. Similarly, the two targets are distinguished from each other by subscripts a and b.

In other viewpoints, the plasma processing apparatus 1 includes: a plurality of first baluns 103a, 103b, a second balun 303, a vacuum container 110, a first electrode 106a and a second electrode 135a, a first electrode 106b, and a second The electrode 135b, the first electrode 141, and the second electrode 145. Or, it may be understood that the plasma processing apparatus 1 includes: a plurality of first baluns 103a, 103b, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 106a, and a second electrode 135a , The first electrode 106b and the second electrode 135b, the first electrode 141 and the second electrode 145. The body 10 includes first terminals 251a, 251b, second terminals 252a, 252b, third terminals 451, and fourth terminals 452.

The first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a are connected Balanced circuit. The first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. An unbalanced circuit is connected to the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b are connected Balanced circuit.

The second balun 303 may have the same configuration as the first baluns 103a and 103b. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 are connected to Balanced circuit. The vacuum container 110 is grounded.

The first electrodes 106a and 106b hold the targets 109a and 109b, respectively. The targets 109a, 109b are, for example, insulator materials or electrical conductor materials. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first baluns 103a and 103b, respectively, and the second electrodes 135a and 135b are electrically connected to the first baluns 103a and 103b, respectively The second balanced terminals 212a and 212b.

The first electrode 141 is the holding substrate 112. The second electrode 145 is arranged around the first electrode 141. The first electrode 141 is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 is the second balanced terminal 412 electrically connected to the second balun 303.

The above configuration is understood that the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, and the first terminal 251a and 251b is electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, respectively, and the second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively Composition. In addition, the above configuration is understood that the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrodes 106a, 106b and the first balanced terminals 211a, 211b (first terminals 251a, 251b) of the first baluns 103a, 103b can be electrically connected via blocking capacitors 104a, 104b, respectively. The blocking capacitors 104a, 104b are between the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first electrodes 106a, 106b (or the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first 2 Between balanced terminals 212a and 212b) DC current is interrupted. Instead of blocking capacitors 104a, 104b, the first impedance matching circuits 102a, 102b will block the flow between the first unbalanced terminals 201a, 201b and the second unbalanced terminals 202a, 202b flowing in the first baluns 103a, 103b The way of the DC current is constituted. Alternatively, the blocking capacitors 104a and 104b may be disposed between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrodes 106a and 106b and the second electrodes 135a and 135b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 blocks the direct current between the first balanced terminal 411 and the first electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Alternatively, the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 can be supported by the vacuum container 110 via the insulator 142.

The plasma processing apparatus 1 may be provided with: a plurality of first high-frequency power supplies 101a, 101b, and a first arranged between the plurality of first high-frequency power supplies 101a, 101b and the plurality of first baluns 103a, 103b Impedance matching circuits 102a, 102b. The first high-frequency power sources 101a and 101b supply high-frequency to the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively between. In other words, the first high-frequency power sources 101a and 101b supply high frequencies to the first electrodes 106a, 106b and the second electrode via the first impedance matching circuits 102a and 102b, the first baluns 103a and 103b, and the blocking capacitors 104a and 104b, respectively Between 135a and 135b. Or, the first high-frequency power sources 101a and 101b supply high-frequency to the first terminals 251a and 251b and the second terminals 252a and 252b of the body 10 through the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. between.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

FIG. 13 schematically shows the configuration of the plasma processing apparatus 1 according to the seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The matters not mentioned in the seventh embodiment can be in accordance with the first to sixth embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 105a and a second electrode 105b that constitute the first group, and a first electrode 141 and a second electrode that constitute the second group 2electrode 145. Or, it may be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode constituting the first group 105b. The first electrode 141 and the second electrode 145 constituting the second group. The body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 are connected Balanced circuit. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 are connected to Balanced circuit. The vacuum container 110 is grounded.

The first electrode 105a of the first group holds the first target 109a, and faces the space on the side of the substrate 112 across the first target 109a. The second electrode 105b of the first group is arranged beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 across the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105a of the first group is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105b of the first group is the second balanced terminal electrically connected to the first balun 103 212.

The first electrode 141 of the second group is the holding substrate 112. The second electrode 145 of the second group is arranged around the first electrode 141. The first electrode 141 of the second group is the first balanced terminal 411 electrically connected to the second balun 303, and the second electrode 145 of the second group is the second balanced terminal electrically connected to the second balun 303 412.

The above configuration is understood that the first electrode 105a of the first group is electrically connected to the first terminal 251, the second electrode 105b of the first group is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected The first balanced terminal 211 of the first balun 103 is connected, and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the first electrode 141 of the second group is electrically connected to the third terminal 451, the second electrode 145 of the second group is electrically connected to the fourth terminal 452, and the third terminal 451 is The first balanced terminal 411 of the second balun 303 is electrically connected, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a of the first group and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104a. The blocking capacitor 104a is shielded between the first balanced terminal 211 of the first balun 103 and the first electrode 105a of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. The second electrode 105b of the first group and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the blocking capacitor 104b. The blocking capacitor 104b is shielded between the second balanced terminal 212 of the first balun 103 and the second electrode 105b of the first group (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103) Break DC current. The first electrode 105a and the second electrode 105b of the first group can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The first electrode 141 of the second group and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is shielded between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second group (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303) Break DC current. Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The first electrode 141 and the second electrode 145 of the second group can be supported by the vacuum container 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power source 101 supplies high-frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a, 104b. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 105 a and the second electrode 105 b of the first group constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high-frequency power supply 301 supplies high-frequency between the first electrode 141 and the second electrode 145 of the second group via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the first electrode 141 and the second electrode 145 of the second group constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 105a and the second electrode 105b of the first group (the side of the body 10) is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, conformity of 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110.

In addition, with the supply of high frequency from the second high-frequency power source 302, in the state where plasma is generated in the internal space of the vacuum container 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 When the side of the first electrode 127 and the second electrode 130 of the second group (side of the body 10) is viewed from the side, the impedance is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, conformity of 1.5≦X2/Rp2≦5000 is advantageous in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110.

The plasma processing apparatus 1 of the seventh embodiment may further include at least one of a mechanism for raising and lowering the first electrode 141 constituting the second group and a mechanism for rotating the first electrode 141 constituting the second group. In the example shown in FIG. 13, the plasma processing apparatus 1 is a drive mechanism 114 that includes both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. In addition, in the example shown in FIG. 13, the plasma processing apparatus 1 is provided with a mechanism 314 that raises and lowers the second electrode 145 constituting the second group. Between the vacuum container 110 and the drive mechanisms 114 and 314, a bellows constituting a vacuum partition wall may be provided.

14, the function of the first balun 103 of the plasma processing apparatus 1 of the seventh embodiment shown in FIG. 13 will be described. Let the current flowing through the first unbalanced terminal 201 be I1, the current flowing through the first balanced terminal 211 be I2, the current flowing through the second unbalanced terminal 202 be I2', and the current I2 flow The current to ground is set to I3. I3=0, that is, when the side current of the balanced circuit does not flow to the ground, the isolation performance of the balanced circuit to ground is optimal. I3=I2, that is, when all the current I2 flowing through the first balanced terminal 211 flows to the ground, the isolation performance of the balanced circuit from the ground is the worst. The index ISO indicating the degree of such isolation performance is the same as in the first to fifth embodiments, and the following formula can be given. Under this definition, the absolute value of the ISO value is larger, and the isolation performance is better.

在圖14中，Rp-jXp(=Rp/2-jXp/2+Rp/2-jXp/2)是表示在真空容器110的內部空間產生電漿的狀態下，從第1平衡端子211及第2平衡端子212的側來看第1電極105a及第2電極105b的側(本體10的側)時的阻抗(包含阻塞電容器104a及104b的電抗)。Rp是表示電阻成分，-Xp是表示電抗成分。並且，在圖14中，X是表示第1巴倫103的第1線圈221的阻抗的電抗成分(電感成分)。ISO是對於X/Rp具有相關性。

In FIG. 14, Rp-jXp (=Rp/2-jXp/2+Rp/2-jXp/2) indicates that the plasma is generated in the internal space of the vacuum container 110 from the first balanced terminal 211 and the first 2 The impedance of the side of the balanced terminal 212 when viewed from the side of the first electrode 105a and the second electrode 105b (the side of the body 10) (including the reactance blocking the capacitors 104a and 104b). Rp represents the resistance component, and -Xp represents the reactance component. In addition, in FIG. 14, X is a reactance component (inductance component) indicating the impedance of the first coil 221 of the first balun 103. ISO is relevant for X/Rp.

FIG. 4 referred to in the description of the first embodiment is an example showing the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The relationship of FIG. 4 is also established in the seventh embodiment. The present inventors found that in the seventh embodiment, compliance with 1.5≦X/Rp≦5000 is also advantageous in order to make the internal space formed in the vacuum container 110 (the space between the first electrode 105a and the second electrode 105b) The electric potential of the plasma (plasma potential) is insensitive to the state of the inner surface of the vacuum container 110. Here, the plasma potential has a dull effect on the state of the inner surface of the vacuum container 110, which means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 is equivalent to -10.0dB≧ISO≧-80dB.

15A to 15D show the results of simulating the plasma potential when 1.5≦X/Rp≦5000, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential). 15A is a diagram showing the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110 . 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110 . 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 15D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in the state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). As can be understood from FIGS. 15A to 15D, compliance with 1.5≦X/Rp≦5000 is beneficial to stabilize the plasma potential of the inner surface of the vacuum container 110 in various states.

16A to 16D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when 1.5≦X/Rp≦5000 is not satisfied. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110 . 16B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. . 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in the state where an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110 ). 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110 ). As can be understood from FIGS. 16A to 16D, when 1.5≦X/Rp≦5000 is not satisfied, the plasma potential changes according to the state of the inner surface of the vacuum container 110.

Here, in both the case of X/Rp>5000 (for example, X/Rp=∞) and the case of X/Rp<1.5 (for example, X/Rp=1.16, X/Rp=0.87), the plasma potential will easily depend on The state of the inner surface of the vacuum container 110 changes. When X/Rp>5000, in a state where the film is not formed on the inner surface of the vacuum container 110, discharge occurs only between the first electrode 105a and the second electrode 105b. However, in the case of X/Rp>5000, once the film starts to be formed on the inner surface of the vacuum container 110, the plasma potential will sensitively react to this, resulting in the results shown in the examples shown in FIGS. 16A to 16D. On the other hand, when X/Rp<1.5, the current flowing into the ground through the vacuum container 110 is large, so the state of the inner surface of the vacuum container 110 (which is caused by the electrical characteristics of the film formed on the inner surface) The effect of is significant, and the plasma potential will vary depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

FIG. 17 schematically shows the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. The plasma processing apparatus of the eighth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the eighth embodiment is that the first to seventh embodiments can be followed. The plasma processing apparatus 1 of the eighth embodiment includes a balun (first balun) 103, a vacuum container 110, a first electrode 105a, and a second electrode 105b. Or, it may be understood that the plasma processing apparatus 1 includes a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode 105b. The body 10 has a first terminal 251 and a second terminal 252.

The first electrode 105a can have a first holding surface HS1 that can hold a first target 109a as a first member, and the second electrode 105b can have a second holding surface HS2 that can hold a second target 109b as a second member. The first holding surface HS1 and the second holding surface HS2 are planes PL that can belong to one.

The plasma processing apparatus 1 of the eighth embodiment may further include the second balun 303, the third electrode 141, and the fourth electrode 145. In other words, the plasma processing apparatus 1 may include the first balun 103, the second balun 303, the vacuum container 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. Or, it can be understood that the plasma processing apparatus 1 includes: a first balun 103, a second balun 303, and a body 10, and the body 10 includes: a vacuum container 110, a first electrode 105a, a second electrode 105b, and a third electrode 141和第4 electrode145. The body 10 includes a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 includes a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the side of the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 The balance circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 includes a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411, and a fourth balanced terminal 412. An unbalanced circuit is connected to the side of the third unbalanced terminal 401 and the fourth unbalanced terminal 402 of the second balun 303, and to the side of the third balanced terminal 411 and the fourth balanced terminal 412 of the second balun 303 The balance circuit is connected. The vacuum container 110 is grounded. The baluns 103 and 303 can have the structures described in FIGS. 2A and 2B (FIG. 14 ), for example.

The first electrode 105a holds the first target 109a, and faces the space on the side of the substrate 112 to be processed via the first target 109a. The second electrode 105b is disposed beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105 a is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105 b is the second balanced terminal 212 electrically connected to the first balun 103.

The third electrode 141 is the holding substrate 112. The fourth electrode 145 can be arranged around the third electrode 141. The third electrode 141 is the first balanced terminal 411 electrically connected to the second balun 303, and the fourth electrode 145 is the second balanced terminal 412 electrically connected to the second balun 303.

The above configuration is understood that the first electrode 105a is electrically connected to the first terminal 251, the second electrode 105b is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balun 103 The first balanced terminal 211 and the second terminal 252 are electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above configuration is understood that the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun The first balanced terminal 411 and the fourth terminal 452 of 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the first path PTH1. In the first path PTH1, a variable reactor 511a can be arranged. In other words, the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the variable reactor 511a. The variable reactor 511a can include a capacitor that can be used between the first balanced terminal 211 of the first balun 103 and the first electrode 105a (or the first balanced terminal 211 of the first balun 103 and the first 2 Between balanced terminals 212) The function of a blocking capacitor that blocks DC current. The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the second path PTH2. In the second path PTH2, a variable reactor 511b can be arranged. In other words, the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the variable reactor 511b. The variable reactor 511b may include a capacitor that can be used between the second balanced terminal 212 of the first balun 103 and the second electrode 105b (or the first balanced terminal 211 of the first balun 103 and the first 2 Between balanced terminals 212) The function of a blocking capacitor that blocks DC current. The first electrode 105a and the second electrode 105b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The plasma processing apparatus 1 may include a variable reactor 521a disposed between the first electrode 105a and the ground. The plasma processing apparatus 1 may include a variable reactor 521b disposed between the second electrode 105b and the ground. The plasma processing apparatus 1 may be provided with a variable reactor 530 connecting the first path PTH1 and the second path PTH2.

In one configuration example, the plasma processing apparatus 1 includes an adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, including (a) The variable reactors 511a, (b) arranged on the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a are arranged between the first electrode 105a and the ground. c) The variable reactor 511b disposed in the second path PTH2 connecting the second balanced terminal 212 and the second electrode 105b, (d) The variable reactor 521b disposed between the second electrode 105b and the ground And (e) at least one variable reactor 530 connecting the first path PTH1 and the second path PTH2.

By adjusting the value of the adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, the amount of sputtering of the first target 109a and the 2 The relationship between the amount of sputtering of the target 109b. Or, by adjusting the value of the adjustment reactor, the balance between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. In this way, the relationship between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Or, the balance between the consumption of the first target 109a and the consumption of the second target 109b may be adjusted. Such a configuration is such that, for example, the replacement timing of the first target 109a and the replacement timing of the second target 109b are the same, which is advantageous for reducing the downtime of the plasma processing apparatus 1. In addition, the thickness distribution of the film formed on the substrate 112 may be adjusted.

The third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 blocks the direct current between the first balanced terminal 411 and the third electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Instead of the blocking capacitor 304, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. The third electrode 141 and the fourth electrode 145 can be supported by the vacuum container 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high-frequency power source 101 and a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power supply 101 supplies high-frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the first path PTH1. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103, the first electrode 105a, and the second electrode 105b constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high-frequency power supply 301 supplies high-frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303, the third electrode 141, and the fourth electrode 145 are the second high-frequency supply unit that configures the high-frequency supply to the internal space of the vacuum container 110.

From the sides of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 in the state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the first high-frequency power source 101 The impedance when looking at the side of the first electrode 105a and the second electrode 105b (the side of the body 10) is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is particularly advantageous in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110. However, meeting the condition of 1.5≦X/Rp1≦5000 is not necessary in the eighth embodiment, and it is desirable to pay attention to favorable conditions. In the eighth embodiment, by providing the balun 103, the potential of the plasma can be stabilized more than when the balun 103 is not provided. Furthermore, by providing an adjustment reactor, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted.

In addition, from the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 in the state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the second high-frequency power supply 301 The impedance when viewing the side of the third electrode 141 and the fourth electrode 145 (the side of the body 10) is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110. However, meeting the condition of 1.5≦X/Rp2≦5000 is not necessary in the eighth embodiment, and it is desirable to pay attention to favorable conditions.

Hereinafter, the ninth to fourteenth embodiments in which the plasma processing apparatus 1 of the eighth embodiment is embodied will be described with reference to FIGS. 18 to 25. FIG. 18 schematically shows the configuration of the plasma processing apparatus 1 of the ninth embodiment of the present invention. As for matters not mentioned in the ninth embodiment, it is possible to follow the eighth embodiment. The plasma processing apparatus 1 of the ninth embodiment includes at least one variable reactor 511a disposed on the first path PTH1 and a variable reactor 511b disposed on the second path PTH2. Here, the plasma processing apparatus 1 is ideal to surround both the variable reactor 511a arranged on the first path PTH1 and the variable reactor 511b arranged on the second path PTH2, but either one can be valued. It is a fixed reactance.

The first variable reactor 511a includes at least the variable inductor 601a, and more preferably includes the variable inductor 601a and the capacitor 602a. The variable inductor 601a may be disposed between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be disposed between the capacitor 602a and the first electrode 105a. The second variable reactor 511b includes at least the variable inductor 601b, and more preferably includes the variable inductor 601b and the capacitor 602b. The variable inductor 601b may be disposed between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be disposed between the capacitor 602b and the second electrode 105b.

FIG. 24 shows that the plasma processing apparatus 1 of the ninth embodiment is formed when the values of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are set to 200 nH. The thickness distribution of the film on the substrate 112. 24 shows that in the plasma processing apparatus 1 of the ninth embodiment, the values of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are set to 400 nH The thickness distribution of the film formed on the substrate 112. The horizontal axis is the position in the horizontal direction (the direction parallel to the surface of the substrate 112) of FIG. 18 and represents the distance from the center of the substrate 112. When the values of the variable inductors 601a and 601b are 400 nH, the thickness distribution of the film differs greatly on the left and right sides of the center of the substrate 112. On the other hand, when the values of the variable inductors 601a and 601b are 200 nH, the left and right sides of the center of the substrate 112 have high symmetry of the film thickness distribution. The balance between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is when the values of the variable inductors 601a and 601b are 200nH than when the values of the variable inductors 601a and 601b are 400nH Better.

FIG. 25 shows the first electrode when the values of the variable inductor 601a of the first path PTH1 and the variable inductor 601b of the second path PTH2 are changed in the plasma processing apparatus 1 of the ninth embodiment. 105a, the voltage of the second electrode 105b. When the values of the variable inductors 601a and 601b are approximately 225nH, the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b are approximately equal.

FIG. 19 schematically shows the configuration of the plasma processing apparatus 1 according to the tenth embodiment of the present invention. As the matters not mentioned in the tenth embodiment, the eighth embodiment can be followed. The plasma processing apparatus 1 of the tenth embodiment includes at least one of the variable reactor 511a disposed on the first path PTH1 and the variable reactor 511b disposed on the second path PTH2. Here, the plasma processing apparatus 1 preferably includes both the variable reactor 511a disposed on the first path PTH1 and the variable reactor 511b disposed on the second path PTH2, but it may also be Either side is a fixed reactance.

The first variable reactor 511a includes at least a variable capacitor 604a, and more preferably includes a variable capacitor 604a and an inductor 603a. The variable capacitor 604a may be disposed between the inductor 603a and the first electrode 105a, or may be disposed between the first balanced terminal 211 (first terminal 251) and the inductor 603a. The second variable reactor 511b includes at least a variable capacitor 604b, and more preferably includes a variable capacitor 604b and an inductor 603b. The variable capacitor 604b may be disposed between the inductor 603b and the second electrode 105b, or may be disposed between the second balanced terminal 212 (second terminal 252) and the inductor 603b.

FIG. 20 schematically shows the configuration of the plasma processing apparatus 1 according to the eleventh embodiment of the present invention. As for matters not mentioned in the eleventh embodiment, it is possible to follow the eighth embodiment. The plasma processing apparatus 1 of the eleventh embodiment includes: a variable capacitor 605a as a variable reactor 521a disposed between the first electrode 105a and the ground, and a variable capacitor 605a disposed as the second electrode 105b and the ground At least one variable capacitor 605b of the variable reactor 521b in between. The plasma processing apparatus 1 may further include: a reactance disposed in the first path PTH1 (in this example, the inductor 603a and a capacitor 602a), and a reactance disposed in the second path PTH2 (in this example, the inductor 603b and the capacitor 602b).

FIG. 21 schematically shows the configuration of the plasma processing apparatus 1 of the twelfth embodiment of the present invention. As the matters not mentioned in the twelfth embodiment, the eighth embodiment can be followed. The plasma processing apparatus 1 of the twelfth embodiment is provided with a variable reactor 521a arranged between the first electrode 105a and the ground, and a variable reactor arranged between the second electrode 105b and the ground At least one of 521b. The variable reactor 521a includes at least the variable inductor 607a, and for example, may include the variable inductor 607a and the capacitor 606a. The variable reactor 521b includes at least the variable inductor 607b, and for example, may include the variable inductor 607b and the capacitor 606b.

The plasma processing apparatus 1 may further include: a reactance disposed in the first path PTH1 (in this example, the inductor 603a and a capacitor 602a), and a reactance disposed in the second path PTH2 (in this example, the inductor 603b and the capacitor 602b).

FIG. 22 schematically shows the configuration of the plasma processing apparatus 1 according to the thirteenth embodiment of the present invention. The matters not mentioned in the thirteenth embodiment can be according to the eighth embodiment. The plasma processing apparatus 1 of the thirteenth embodiment is a variable inductor 608 including a variable reactor 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include: a reactance disposed in the first path PTH1 (in this example, the inductor 603a and a capacitor 602a), and a reactance disposed in the second path PTH2 (in this example, the inductor 603b and the capacitor 602b).

FIG. 23 schematically shows the configuration of the plasma processing apparatus 1 according to the fourteenth embodiment of the present invention. As the matters not mentioned in the fourteenth embodiment, the eighth embodiment can be followed. The plasma processing apparatus 1 of the fourteenth embodiment is a variable capacitor 609 as a variable reactor 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include: a reactance disposed in the first path PTH1 (in this example, the inductor 603a and a capacitor 602a), and a reactance disposed in the second path PTH2 (in this example, the inductor 603b and the capacitor 602b).

In addition, in the ninth to fourteenth embodiments described with reference to FIGS. 18 to 25, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but they may be configured not to be limited by the electrodes, and the so-called Carousel is arranged. The cylindrical substrate holder of the type of plasma device (for example, Japanese Patent Laid-Open No. 2003-1555526, Japanese Patent Laid-Open No. 62-133065) or the so-called In-Line type plasma device A substrate tray of a rectangular shape or the like (for example, Japanese Patent No. 5824572, Japanese Patent Laid-Open No. 2011-144450)

Hereinafter, the operation of adjusting the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. 26 to 31. FIG. 26 schematically shows the configuration of the plasma processing apparatus 1 according to the fifteenth embodiment of the present invention. The plasma processing apparatus 1 of the fifteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the ninth embodiment shown in FIG. 18. The control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal. For example, the control unit 700 generates a first command value that adjusts the values of the variable inductors 601a and 601b as adjustment reactors based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively CNT1, second command value CNT2. The first command value CNT1 and the second command value CNT2 are supplied to the variable inductors 601a and 601b, respectively. The variable inductors 601a and 601b change their own inductance according to the first command value CNT1 and the second command value CNT2, respectively.

FIG. 27 schematically shows the configuration of the plasma processing apparatus 1 according to the sixteenth embodiment of the present invention. The plasma processing apparatus 1 of the sixteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the tenth embodiment shown in FIG. 19. The control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal. For example, the control unit 700 generates a first command value CNT1 that adjusts the values of the variable capacitors 604a and 604b as adjustment reactors based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively. The second command value is CNT2. The first command value CNT1 and the second command value CNT2 are supplied to the variable capacitors 604a and 604b, respectively. The variable capacitors 604a and 604b change their capacitances according to the first command value CNT1 and the second command value CNT2, respectively.

FIG. 28 schematically shows the configuration of the plasma processing apparatus 1 according to the seventeenth embodiment of the present invention. The plasma processing apparatus 1 of the seventeenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the eleventh embodiment shown in FIG. 20. The control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal. For example, the control unit 700 generates a first command value CNT1 that adjusts the values of the variable capacitors 605a and 605b as adjustment reactors based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively. The second command value is CNT2. The first command value CNT1 and the second command value CNT2 are supplied to the variable capacitors 605a and 605b, respectively. The variable capacitors 605a and 605b change their capacitances according to the first command value CNT1 and the second command value CNT2, respectively.

FIG. 29 schematically shows the configuration of the plasma processing apparatus 1 according to the eighteenth embodiment of the present invention. The plasma processing apparatus 1 of the eighteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the twelfth embodiment shown in FIG. 21. The control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal. For example, the control unit 700 generates a first command value that adjusts the values of the variable inductors 607a and 607b as adjustment reactors based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, respectively CNT1, second command value CNT2. The first command value CNT1 and the second command value CNT2 are supplied to the variable inductors 607a and 607b, respectively. The variable inductors 607a and 607b change their own inductances according to the first command value CNT1 and the second command value CNT2, respectively.

FIG. 30 schematically shows the configuration of the plasma processing apparatus 1 of the nineteenth embodiment of the present invention. The plasma processing apparatus 1 of the nineteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the thirteenth embodiment shown in FIG. 22. The control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal. For example, the control unit 700 generates a command value CNT for adjusting the value of the variable inductor 608 as an adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value CNT is supplied to the variable inductor 608. The variable inductor 608 changes its own inductance according to the command value.

FIG. 31 schematically shows the configuration of the plasma processing apparatus 1 according to the twentieth embodiment of the present invention. The plasma processing apparatus 1 of the twentieth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the fourteenth embodiment shown in FIG. 23. The control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, so that the first voltage V1 and the second voltage V2 can be equal. For example, the control unit 700 generates a command value CNT as the value of the adjustable variable capacitor 609 for adjusting the reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value CNT is supplied to the variable capacitor 609. The variable capacitor 609 changes its own capacitance according to the command value CNT.

FIG. 32 schematically shows the configuration of the plasma processing apparatus 1 of the twenty-first embodiment of the present invention. The plasma processing apparatus 1 of the 21st embodiment is operable as an etching apparatus for etching the substrates 112a and 112b. In the plasma processing apparatus 1 of the 21st embodiment, the first electrode 105a and the second electrode 105b respectively hold the first substrate 112a and the second substrate 112b to be etched, and the third electrode 141 does not hold the point of the substrate. The plasma processing apparatus 1 of the embodiment is different, and the other points are that it can have the same configuration as the plasma processing apparatus 1 of the eighth embodiment.

In one configuration example, the plasma processing apparatus 1 includes, as an adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b: (a ) The variable reactor 511a arranged in the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, (b) The variable reactor 521a arranged between the first electrode 105a and ground (c) The variable reactor 511b disposed in the second path PTH2 connecting the second balanced terminal 212 and the second electrode 105b, (d) The variable reactor disposed between the second electrode 105b and the ground 521b, and (e) at least one variable reactor 530 connecting the first path PTH1 and the second path PTH2.

By adjusting the value of the adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, the etching amount distribution of the first substrate 112a and the second substrate can be adjusted 112b etching amount distribution. Or, by adjusting the value of the reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, the distribution of the etching amount of the first substrate 112a and the second 2 The etching amount distribution of the substrate 112b is the same.

In addition, in the fifteenth to twentieth embodiments described with reference to FIGS. 26 to 31, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but it may be configured not to be limited by the electrodes, and the so-called Carousel is arranged. The cylindrical substrate holder of the type of plasma device (for example, Japanese Patent Laid-Open No. 2003-1555526, Japanese Patent Laid-Open No. 62-133065) or the so-called In-Line type plasma device A substrate tray of a rectangular shape or the like (for example, Japanese Patent No. 5824572, Japanese Patent Laid-Open No. 2011-144450)

In the fifteenth to twentieth embodiments described with reference to FIGS. 26 to 31, the control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b . Instead of such a configuration, the control unit 700 may adjust the adjustment reactor based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b. The plasma strength in the vicinity of the first electrode 105a can be detected by a photoelectric conversion device, for example. Similarly, the plasma strength in the vicinity of the second electrode 105b can be detected by a photoelectric conversion device, for example. The control unit 700 may be configured based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b, for example, the plasma strength near the first electrode 105a and the second electrode 105b Adjust the reactor value in such a way that the nearby plasma strength will be equal.

Next, a plasma processing method as the 22nd embodiment of the present invention will be described. As a plasma processing method of the 22nd embodiment, the substrate 112 is processed in the plasma processing apparatus 1 of any one of the 8th to 21st embodiments. The plasma processing method may include a process of adjusting the adjustment reactor so that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted, and After this process, the process of processing the substrate 112 is performed. This process may include a process of forming a film on the substrate 112 by sputtering, or a process of etching the substrate 112.

FIG. 33 schematically shows the configuration of the plasma processing apparatus 1 according to the twenty-third embodiment of the present invention. The plasma processing apparatus 1 of the 23rd embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the ninth embodiment shown in FIG. 18. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. Way, the value of the reactor will be adjusted. For example, the control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the first target value is formed by the first voltage V1, and the second target value is formed by the second voltage V2 In this method, the first command value CNT1 and the second command value CNT2 are adjusted, which are values of the variable inductors 601a and 601b, which are adjustment reactors, respectively. Here, the first target value and the second target value may be equal to each other, or may be set such that the difference between the first target value and the second target value coincides with the target difference value. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

The control unit 700 generates a command value CNT3 that controls the impedance matching circuit 102. The control unit 700 controls the impedance matching circuit 102 so that the impedance matching circuit 102 becomes an impedance for plasma ignition when the plasma is ignited. In addition, the control unit 700 changes the impedance of the impedance matching circuit 102 so that the plasma becomes stable after the plasma is ignited. In the state where the plasma is stable, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 at the time of plasma generation (viewed from the sides of the first balanced terminal 211 and the second balanced terminal 212 Impedance at the side of the electrode 105a and the second electrode 105b (the side of the body 10). The impedance of the impedance matching circuit 102 at this time is Rp+jXp.

The control unit 700 is, for example, a PLD (short for Programmable Logic Device) such as FPGA (short for Field Programmable Gate Array), or an ASIC (short for Application Specific Integrated Circuit), or a general-purpose or dedicated computer with a program installed , Or a combination of all or part of these. The program is stored in a memory medium (computer-readable memory medium) or may be provided via a communication line.

FIG. 40 illustrates the operation of the plasma processing apparatus 1 of the 23rd embodiment. This operation can be controlled by the control unit 700. In process S401, the control part 700 determines the command value CNT3 in such a manner that the impedance (Rpi+jXpi) of the impedance matching circuit 102 is set or changed to the plasma ignition resistance (Rpi-jXpi), and the command value CNT3 Supply to the impedance matching circuit 102. The impedance matching circuit 102 sets or changes its own impedance according to the command value CNT3.

Then, in the process S402 (ignition process), the control unit 700 activates (ON) the high-frequency power supply 402 in a state where the impedance of the impedance matching circuit 102 is set to the impedance for plasma ignition, causing high-frequency generation . The high frequency generated by the high-frequency power supply 402 is supplied to the first electrode 105a and the second electrode 105b through the impedance matching circuit 102, the balun 103, and the adjustment reactors (variable inductors 601a, 601b, capacitors 602a, 602b) . By this, the plasma will be ignited.

In the process S403 (matching process), the control unit 700 changes the impedance of the impedance matching circuit 102 in such a manner that the plasma becomes stable after the plasma is ignited. Specifically, in step S403, the control unit 700 determines the command value CNT3 such that the plasma-stabilized impedance is set in the impedance matching circuit 700, and supplies the command value CNT3 to the impedance matching circuit 700. In the state where the plasma is stable, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 (the side of the first electrode 106 and the second electrode 111) at the time of plasma generation. The impedance of the impedance matching circuit 102 at this time is Rp+jXp. In addition, the value of Rp is different from Rpi, and the value of Xp is different from Xpi.

Then, in step S404, the control unit 700 obtains the voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Then, in the process S405 (adjustment process), the control unit 700 is based on the voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b to form the first target value with the first voltage V1 and the second voltage V2 The second target value is formed so that the first command value CNT1 and the second command value CNT2 are adjusted for the values of the variable inductors 601a and 601b as variable reactors, respectively. The first command value CNT1 and the second command value CNT2 are supplied to the variable inductors 601a and 601b, respectively. The variable inductors 601a and 601b adjust or change their own inductance according to the first command value CNT1 and the second command value CNT2, respectively.

FIG. 41 shows the side of the first electrode 105a and the second electrode 105b (the side of the body 10) from the side of the first balanced terminal 211 and the second balanced terminal 212 in a state where plasma is generated in the internal space of the vacuum container 110. Side) the relationship between the reactance and the voltage of the first electrode 105a and the second electrode 105b. This reactance is equivalent to the aforementioned -XP. As illustrated in FIG. 41, the voltages of the first electrode 105a and the second electrode 105b are adjusted by changing the reactance of the reactor, and the magnitude relationship between these is replaced. In other words, the change curve of the voltage of the first electrode 105a and the second electrode 105b with respect to the change in reactance shows the characteristic of crossing each other.

The characteristics illustrated in FIG. 41 can be determined by, for example, experiments or calculations in advance. In this case, in the process S405, the control unit 700 can form the first target value with the first voltage V1 and the second voltage V2 according to this characteristic and the voltage V1 of the first electrode 105a and the voltage V2 of the second electrode 105b In order to form the second target value, the first command value CNT1 and the second command value CNT2 for adjusting the values of the variable inductors 601a and 601b, respectively, are generated. When the characteristics illustrated in FIG. 41 are not determined in advance, in step S405, the control unit 700 can finely adjust the first command value CNT1 and the second command value based on the voltage V1 of the first electrode 105a and the voltage V2 of the second electrode 105b. Command value CNT2.

Then, in step S407, the control unit 700 obtains the voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Then, in step S408, the control unit 700 determines whether the first voltage V1 forms the first target value, the second voltage V2 forms the second target value, and when the first voltage V1 forms the first target value, the second voltage V2 forms the first 2 When the target value is reached, proceed to project S409, and if not, return to project S405. In the process S409 (processing process), the control unit 700 performs control so that the substrate 112 will be processed. This control may include, for example, controlling the opening and closing of a shutter (not shown) arranged between the target 109a and the substrate 112 and a shutter (not shown) arranged between the target 109b and the substrate 112. The processing shown in FIG. 40 can also be performed manually.

FIG. 3 of Japanese Unexamined Patent Publication No. 2-15680 describes the provision of a high-frequency transformer (Tr7), a matching device (MB7), a vacuum container (10), a first target (T5), a second target (T6), and high-frequency Sputtering device for voltage generator (OSC5), voltage amplifier (PA5), substrate holder (21) and motor (22). The sputtering device described in Japanese Patent Laid-Open No. 2-15680 is arranged between the high-frequency transformer (Tr7) and the first target (T5) and the matching between the high-frequency transformer (Tr7) and the second target (T7) (MB7) has adjustable reactance.

However, the matching device (MB7) of the sputtering device described in Japanese Patent Laid-Open No. 2-15680 cannot operate as the adjustment reactors (variable inductors 601a and 601b) of the 23rd embodiment described above. The reason is that the matching device (MB7) is indispensable for impedance matching. If the reactance of the matching device (MB7) is allowed to be adjusted freely, the matching device (MB7) cannot be used for impedance matching, nor can plasma be generated, nor Stabilize the plasma.

Here, the plasma (P5) generated in the sputtering apparatus described in Japanese Patent Laid-Open No. 2-15680 is understood to have ions called sheaths near the targets (T5, T6). Too many areas and areas that are in contact with one another's bulk plasma. The sheath layer has a negative reactance component like a capacitor, and the main body plasma has a positive reactance component like an inductor. These reactance components are applied power, discharge pressure, electrode material, etc. depending on the conditions under which plasma is generated. Therefore, the reactance of the plasma is taken as a positive value or a negative value, and its absolute value can also be changed. Since the sputtering device described in Japanese Patent Laid-Open No. 2-15680 does not have the adjustment reactor as exemplified in the 23rd embodiment, it is impossible to control two targets (T5, T6), in other words, two electrodes The relationship between the voltage.

FIG. 34 schematically shows the configuration of the plasma processing apparatus 1 according to the 24th embodiment of the present invention. The plasma processing apparatus 1 of the 24th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 10th embodiment shown in FIG. 19. As the matters not mentioned in the 24th embodiment, the 23rd embodiment can be followed. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. Way, the value of the reactor will be adjusted. For example, the control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the first target value is formed by the first voltage V1, and the second target value is formed by the second voltage V2 In this method, the first command value CNT1 and the second command value CNT2, which are values for adjusting the variable capacitors 604a and 604b of the adjustment reactor, are generated. The first command value CNT1 and the second command value CNT2 are supplied to the variable capacitors 604a and 604b, respectively. The variable capacitors 604a and 604b change their capacitances according to the first command value CNT1 and the second command value CNT2, respectively. In addition, the control unit 700 generates a command value CNT3 that controls the impedance matching circuit 102. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 35 schematically shows the configuration of the plasma processing apparatus 1 according to the 25th embodiment of the present invention. The plasma processing apparatus 1 of the 25th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 25th embodiment shown in FIG. 20. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. Way, the value of the reactor will be adjusted. For example, the control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the first target value is formed by the first voltage V1, and the second target value is formed by the second voltage V2 In the method, the first command value CNT1 and the second command value CNT2, which are values for adjusting the variable capacitors 605a and 605b of the adjustment reactor, are generated. Here, the first target value and the second target value may be equal to each other, or may be set such that the difference between the first target value and the second target value coincides with the target difference value. The first command value CNT1 and the second command value CNT2 are supplied to the variable capacitors 605a and 605b, respectively. The variable capacitors 605a and 605b change their capacitances according to the first command value CNT1 and the second command value CNT2, respectively. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 36 schematically shows the configuration of the plasma processing apparatus 1 according to the twenty-sixth embodiment of the present invention. The plasma processing apparatus 1 of the twenty-sixth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the twelfth embodiment shown in FIG. 21. As the matters not mentioned in the 26th embodiment, the 23rd embodiment can be followed. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. Way, the value of the reactor will be adjusted. For example, the control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the first target value is formed by the first voltage V1, and the second target value is formed by the second voltage V2 In this method, the first command value CNT1 and the second command value CNT2 are adjusted, which are values of the variable inductors 607a and 607b, which are adjustment reactors, respectively. The first command value CNT1 and the second command value CNT2 are supplied to the variable inductors 607a and 607b, respectively. The variable inductors 607a and 607b change their own inductances according to the first command value CNT1 and the second command value CNT2, respectively. In addition, the control unit 700 generates a command value CNT3 that controls the impedance matching circuit 102. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 37 schematically shows the configuration of the plasma processing apparatus 1 according to the twenty-seventh embodiment of the present invention. The plasma processing apparatus 1 of the 27th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 13th embodiment shown in FIG. 22. As the matters not mentioned in the 27th embodiment, the 23rd embodiment can be followed. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. Way, the value of the reactor will be adjusted. For example, the control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the first target value is formed by the first voltage V1, and the second target value is formed by the second voltage V2 In this manner, a command value CNT that is a value for adjusting the variable inductor 608 of the reactor is generated. The command value CNT is supplied to the variable inductor 608. The variable inductor 608 changes its own inductance according to the command value. In addition, the control unit 700 generates a command value CNT3 that controls the impedance matching circuit 102. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 38 schematically shows the configuration of the plasma processing apparatus 1 according to the 28th embodiment of the present invention. The plasma processing apparatus 1 of the 28th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 14th embodiment shown in FIG. 23. As the matters not mentioned in the 28th embodiment, the 23rd embodiment can be followed. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. Way, the value of the reactor will be adjusted. For example, based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the control unit 700 forms the first target value with the first voltage V1 and the second target value with the second voltage V2, A command value CNT that adjusts the value of the variable capacitor 609 of the reactor is generated. The command value CNT is supplied to the variable capacitor 609. The variable capacitor 609 changes its own capacitance according to the command value CNT. In addition, the control unit 700 generates a command value CNT3 that controls the impedance matching circuit 102. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 39 schematically shows the configuration of the plasma processing apparatus 1 according to the twenty-ninth embodiment of the present invention. The plasma processing apparatus 1 of the 29th embodiment can be operated as an etching apparatus for etching the substrates 112a and 112b. The plasma processing apparatus 1 of the 29th embodiment may have the same configuration as the plasma processing apparatus 1 of the 21st embodiment except for the control unit 700. The matters not mentioned in the 29th embodiment can follow the 23rd embodiment.

In one configuration example, the plasma processing apparatus 1 includes: (a) a variable reactor 511a arranged in a first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, (b) The variable reactors 521a, (c) arranged between the first electrode 105a and the ground are arranged in the variable reactors 511b, (d of the second path PTH2 connecting the second balanced terminal 212 and the second electrode 105b ) The variable reactor 521b disposed between the second electrode 105b and the ground, and (e) at least one variable reactor 530 connecting the first path PTH1 and the second path PTH2 is applied as an influence An adjustment reactor for the relationship between the first voltage at the first electrode 105a and the second voltage applied to the second electrode 105b.

By adjusting the value of the adjustment reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, the etching amount distribution of the first substrate 112a and the second substrate can be adjusted 112b etching amount distribution. Or, by adjusting the value of the reactor that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, the distribution of the etching amount of the first substrate 112a and the second The etching amount distribution of the two substrates 112b is the same.

In addition, in the 23rd to 29th embodiments described with reference to FIGS. 33 to 39, electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but it is not limited to the electrodes, and it may be configured to arrange a so-called rotary type of electric Cylindrical substrate rotating pedestal of the plasma device (for example, Japanese Patent Application Laid-Open 2003-1555526, Japanese Patent Application Laid-Open 62-133065) or a rectangular-shaped substrate tray of a plasma device of the so-called in-line type (for example, Japan (Patent No. 5824702, Special Open 2011-144450).

In the 23rd to 29th embodiments described with reference to FIGS. 33 to 39, the control unit 700 adjusts the value of the adjustment reactor based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b . Instead of such a configuration, the control unit 700 is configured to adjust the adjustment reactor based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b. The plasma strength in the vicinity of the first electrode 105a can be detected by a photoelectric conversion device, for example. Similarly, the plasma strength in the vicinity of the second electrode 105b can be detected by a photoelectric conversion device, for example. The control unit 700 may be configured based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b, for example, the plasma strength near the first electrode 105a and the second electrode 105b Adjust the reactor value in such a way that the nearby plasma strength will be equal.

FIG. 42 schematically shows the configuration of the plasma processing apparatus 1 according to the thirtieth embodiment of the present invention. The plasma processing apparatus of the 30th embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. What is not mentioned as the plasma processing apparatus 1 of the 30th embodiment is that the first to 29th embodiments can be followed. The plasma processing apparatus 1 of the 30th embodiment includes a balun (first balun) 103, a vacuum container 110, a first electrode 105a, and a second electrode 105b. Or, it may be understood that the plasma processing apparatus 1 includes a balun 103 and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, and a second electrode 105b. The body 10 has a first terminal 251 and a second terminal 252.

The first electrode 105a can have a first holding surface HS1 that can hold a first target 109a as a first member, and the second electrode 105b can have a second holding surface HS2 that can hold a second target 109b as a second member. The first holding surface HS1 and the second holding surface HS2 are planes PL that can belong to one.

The plasma processing apparatus 1 of the 30th embodiment may further include the second balun 303, the third electrode 141, and the fourth electrode 145. In other words, the plasma processing apparatus 1 may include the first balun 103, the second balun 303, the vacuum container 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. Or, it can be understood that the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a body 10, and the body 10 includes a vacuum container 110, a first electrode 105a, a second electrode 105b, and a third electrode 141 and The fourth electrode 145. The body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and to the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 Balanced circuit. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 has a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411, and a fourth balanced terminal 412. An unbalanced circuit is connected to the side of the third unbalanced terminal 401 and the fourth unbalanced terminal 402 of the second balun 303, and to the side of the third balanced terminal 411 and the fourth balanced terminal 412 of the second balun 303 Balanced circuit. The vacuum container 110 is grounded. The baluns 103 and 303 can have the structures described in FIGS. 2A and 2B (FIG. 14), for example.

The first electrode 105a holds the first target 109a and faces the space on the side of the substrate 112 to be processed via the first target 109a. The second electrode 105b is disposed beside the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b. The targets 109a and 109b are, for example, insulator materials or conductor materials. The first electrode 105 a is the first balanced terminal 211 electrically connected to the first balun 103, and the second electrode 105 b is the second balanced terminal 212 electrically connected to the first balun 103.

The third electrode 141 is the holding substrate 112. The fourth electrode 145 can be arranged around the third electrode 141. The third electrode 141 is the first balanced terminal 411 electrically connected to the second balun 303, and the fourth electrode 145 is the second balanced terminal 412 electrically connected to the second balun 303.

The above configuration is understood that the first electrode 105a is electrically connected to the first terminal 251, the second electrode 105b is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balun 103 The first balanced terminal 211 and the second terminal 252 are electrically connected to the second balanced terminal 212 of the first balun 103. In addition, the above-mentioned configuration can be understood that the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second bar The first balanced terminal 411 and the fourth terminal 452 of the lun 303 are electrically connected to the second balanced terminal 412 of the second balun 303.

The first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the first path PTH1. Reactance 511a can be arranged in the first path PTH1. In other words, the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the reactance 511a. The reactance 511a may include a capacitor between the first balanced terminal 211 of the first balun 103 and the first electrode 105a (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 ) Can be used as a blocking capacitor function to interrupt DC current. The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the second path PTH2. Reactance 511b is configurable in the second path PTH2. In other words, the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the reactance 511b. The reactance 511b may include a capacitor between the second balanced terminal 212 of the first balun 103 and the second electrode 105b (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 ) Can be used as a blocking capacitor function to interrupt DC current. The first electrode 105a and the second electrode 105b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

The plasma processing apparatus 1 may include a reactance 521a disposed between the first electrode 105a and the ground. The plasma processing apparatus 1 may include a reactance 521b disposed between the second electrode 105b and the ground. The plasma processing apparatus 1 may include a reactance 530 connecting the first path PTH1 and the second path PTH2.

In one configuration example, the plasma processing apparatus 1 includes: (a) a reactance 511a disposed in the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, and (b) disposed in the first Reactances 521a and (c) between electrode 105a and ground are arranged between reactance 511b and (d) of second path PTH2 connecting second balanced terminal 212 and second electrode 105b between second electrode 105b and ground At least one of the reactance 521b and (e) the reactance 530 connecting the first path PTH1 and the second path PTH2, as the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b Voltage relationship.

The third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 blocks the direct current between the first balanced terminal 411 and the third electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Alternatively, the second impedance matching circuit 302 may block the DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, instead of providing the blocking capacitor 304. The third electrode 141 and the fourth electrode 145 can be supported by the vacuum container 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may be provided with a first high-frequency power source 101 that generates high frequencies supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. The high-frequency power supply 101 can change the frequency of high-frequency supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. By changing the frequency, the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted. Or, by changing the frequency, the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted.

Therefore, by adjusting the frequency, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. Or, by adjusting the frequency, the balance between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. By this, the relationship between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Alternatively, the balance between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Such a configuration is advantageous, for example, in order to set the replacement timing of the first target 109 a and the replacement timing of the second target 109 b to the same timing, and to reduce the downtime of the plasma processing apparatus 1. Furthermore, by adjusting the frequency, the thickness distribution of the film formed on the substrate 112 can also be adjusted.

The plasma processing apparatus 1 may further include a first impedance matching circuit 102 disposed between the first high-frequency power source 101 and the first balun 103. The first high-frequency power supply 101 supplies high-frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the first path PTH1. Or, the first high-frequency power source 101 supplies high-frequency between the first terminal 251 and the second terminal 252 of the body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103, the first electrode 105a, and the second electrode 105b constitute a first high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

The plasma processing apparatus 1 may include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high-frequency power supply 301 supplies high-frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high-frequency power supply 301 supplies high-frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Or, the second high-frequency power supply 301 supplies high-frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303, the third electrode 141, and the fourth electrode 145 constitute a second high-frequency supply unit that supplies high-frequency to the internal space of the vacuum container 110.

With the supply of high frequency from the first high-frequency power source 101, in the state where plasma is generated in the internal space of the vacuum vessel 110, the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 will come The impedance when looking at the side of the first electrode 105a and the second electrode 105b (the side of the body 10) is set to Rp1-jXp1. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 be X1. In this definition, compliance with 1.5≦X1/Rp1≦5000 is particularly advantageous in order to stabilize the potential of the plasma formed in the internal space of the vacuum container 110. However, meeting the condition of 1.5≦X/Rp1≦5000 is not necessary in the 30th embodiment, and it is desirable to pay attention to favorable conditions. In the 30th embodiment, by providing the balun 103, the potential of the plasma can be stabilized compared to the case without the balun 103. Furthermore, by providing a high-frequency power source 101 that can change the frequency of the generated high frequency, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted.

In addition, with the supply of high frequency from the second high-frequency power supply 301, in the state where plasma is generated in the internal space of the vacuum vessel 110, the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 The impedance when viewing the side of the third electrode 141 and the fourth electrode 145 (the side of the body 10) is Rp2-jXp2. Furthermore, let the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 be X2. In this definition, compliance with 1.5≦X2/Rp2≦5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum container 110. However, satisfying the condition of 1.5≦X/Rp2≦5000 is not necessary in the 30th embodiment, and it is desirable to pay attention to favorable conditions.

Hereinafter, the 31st to 34th embodiments in which the plasma processing apparatus 1 of the 29th embodiment is embodied will be described with reference to FIGS. 43 to 48. FIG. 43 schematically shows the configuration of the plasma processing apparatus 1 according to the thirty-first embodiment of the present invention. As the matters not mentioned in the 31st embodiment, it is possible to follow the 30th embodiment. The plasma processing apparatus 1 of the 31st embodiment includes at least one reactance 511a disposed in the first path PTH1 and a reactance 511b disposed in the second path PTH2. Here, it is preferable that the plasma processing apparatus 1 includes both the reactance 511a disposed in the first path PTH1 and the reactance 511b disposed in the second path PTH2.

The first reactance 511a may include an inductor 601a and a capacitor 602a. The inductor 601a may be disposed between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be disposed between the capacitor 602a and the first electrode 105a. The second reactance 511b may include an inductor 601b and a capacitor 602b. The inductor 601b may be disposed between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be disposed between the capacitor 602b and the second electrode 105b.

FIG. 47 shows the normalized thickness distribution of the film formed on the substrate 112 when the frequency of the high frequency generated by the high-frequency power source 101 is set to 12.56 MHz in the plasma processing apparatus 1 of the 31st embodiment. 47 shows the normalized thickness of the film formed on the substrate 112 when the frequency of the high frequency generated by the high-frequency power source 101 is set to 13.56 MHz in the plasma processing apparatus 1 of the 31st embodiment. distributed. The horizontal axis is the position in the horizontal direction (the direction parallel to the surface of the substrate 112) of FIG. 43 and represents the distance from the center of the substrate 112. When the frequency of the high frequency generated by the high-frequency power source 101 is 12.56 MHz, the thickness distribution of the film differs greatly on the left and right sides of the center of the substrate 112. On the other hand, when the frequency of the high frequency generated by the high-frequency power source 101 is 13.56 MHz, the symmetry of the thickness distribution of the film is high on the left and right sides of the center of the substrate 112. When the frequency of the high frequency generated by the high-frequency power source 101 is 13.56 MHz, the balance between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is higher than that generated by the high-frequency power source 101. The frequency is better at 12.56MHz.

FIG. 48 illustrates the voltage of the first electrode 105a (first voltage) and the second electrode 105b when the frequency of the high frequency generated by the high-frequency power source 101 is changed in the plasma processing apparatus 1 of the 30th embodiment. Voltage (second voltage). By changing the frequency of the high frequency generated by the high-frequency power supply 101, the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted. Alternatively, by changing the frequency of the high frequency generated by the high-frequency power source 101, the relationship between the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted. For example, the frequency of the high frequency generated by the high-frequency power source 101 can be adjusted so that the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) are equal. With this, the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be made the same. This is advantageous, for example, in order to set the replacement timing of the first target 109 a and the replacement timing of the second target 109 b to the same timing, and to reduce the downtime of the plasma processing apparatus 1.

FIG. 44 schematically shows the configuration of the plasma processing apparatus 1 according to the 32nd embodiment of the present invention. The matters not mentioned in the 32nd embodiment are the 30th embodiment. The plasma processing apparatus 1 of the 32nd embodiment is provided with at least one reactance 521a disposed between the first electrode 105a and the ground and a reactance 521b disposed between the second electrode 105b and the ground. The reactance 521a may include, for example, an inductor 607a and a capacitor 606a. Reactance 521b may include inductor 607b and capacitor 606b, for example.

The plasma processing apparatus 1 may further include a reactance 511a (in this example, an inductor 603a and a capacitor 602a) arranged in the first path PTH1 and a reactance 511b (in this example, an inductor 603b and a capacitor arranged in the second path PTH2 602b).

FIG. 45 schematically shows the configuration of the plasma processing apparatus 1 according to the 33rd embodiment of the present invention. As the matters not mentioned in the 33rd embodiment, the 30th embodiment can be used. The plasma processing apparatus 1 of the 33rd embodiment is an inductor 608 provided with a reactance 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include a reactance 511a (in this example, an inductor 603a and a capacitor 602a) arranged in the first path PTH1 and a reactance 511b (in this example, an inductor 603b and a capacitor arranged in the second path PTH2 602b).

FIG. 46 schematically shows the configuration of the plasma processing apparatus 1 according to the 33rd embodiment of the present invention. As the matters not mentioned in the 33rd embodiment, the 30th embodiment can be used. The plasma processing apparatus 1 of the 33rd embodiment is a capacitor 609 provided with a variable reactor 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 may further include a reactance 511a (in this example, an inductor 603a and a capacitor 602a) arranged in the first path PTH1 and a reactance 511b (in this example, an inductor 603b and a capacitor arranged in the second path PTH2 602b).

In addition, in the 30th to 33rd embodiments described with reference to FIGS. 43 to 48, electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but the electrodes are not limited to the above, and may be configured to be arranged in a so-called rotary type. Cylindrical substrate rotating pedestal of plasma device (for example, Japanese Patent Laid-Open No. 2003-1555526, Japanese Patent Laid-Open No. 62-133065) or a rectangular-shaped substrate tray of plasma device of so-called in-line type (for example, (Japanese Patent No. 5824702, Japanese Patent Application No. 2011-144450).

Hereinafter, the operation of adjusting the frequency of the high frequency generated by the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. 49-53. FIG. 49 schematically shows the configuration of the plasma processing apparatus 1 according to the 35th embodiment of the present invention. The plasma processing apparatus 1 of the 35th embodiment has a configuration in which the control unit 700 is added to the plasma processing apparatus 1 of the 31st embodiment shown in FIG. 43. The control unit 700 adjusts the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, such that the first voltage V1 and the second voltage V2 are equal High frequency. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency CNT. The command value CNT is supplied to the high-frequency power supply 101. The high-frequency power source 101 changes the frequency of the high-frequency generated by itself according to the command value CNT. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 50 schematically shows the configuration of the plasma processing apparatus 1 according to the 36th embodiment of the present invention. The plasma processing apparatus 1 of the 36th embodiment has a configuration in which the control unit 700 is added to the plasma processing apparatus 1 of the 32nd embodiment shown in FIG. 44. The control unit 700 adjusts the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, such that the first voltage V1 and the second voltage V2 are equal High frequency. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency CNT. The command value CNT is supplied to the high-frequency power supply 101. The high-frequency power source 101 changes the frequency of the high-frequency generated by itself according to the command value CNT. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 51 schematically shows the configuration of the plasma processing apparatus 1 according to the 37th embodiment of the present invention. The plasma processing apparatus 1 of the 37th embodiment has a configuration in which the control unit 700 is added to the plasma processing apparatus 1 of the 33rd embodiment shown in FIG. 45. The control unit 700 adjusts the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, such that the first voltage V1 and the second voltage V2 are equal High frequency. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency CNT. The command value CNT is supplied to the high-frequency power supply 101. The high-frequency power source 101 changes the frequency of the high-frequency generated by itself according to the command value CNT. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Or, in such a measurement, the control part 700 may be provided separately.

FIG. 52 schematically shows the configuration of the plasma processing apparatus 1 according to the 38th embodiment of the present invention. The plasma processing apparatus 1 of the 38th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 34th embodiment shown in FIG. 46. The control unit 700 adjusts the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, such that the first voltage V1 and the second voltage V2 are equal High frequency. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency CNT. The command value CNT is supplied to the high-frequency power supply 101. The high-frequency power source 101 changes the frequency of the high-frequency generated by itself according to the command value CNT. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 53 schematically shows the configuration of the plasma processing apparatus 1 according to the 39th embodiment of the present invention. The plasma processing apparatus 1 of the 39th embodiment can be operated as an etching apparatus for etching the substrates 112a and 112b. The plasma processing apparatus 1 of the 39th embodiment is that the first electrode 105a and the second electrode 105b respectively hold the first substrate 112a and the second substrate 112b to be etched, and the third electrode 141 does not hold the point of the substrate. The plasma processing apparatus 1 of FIG. 1 is different, and the other points are that it can have the same configuration as the plasma processing apparatus 1 of the 30th embodiment.

In one configuration example, the plasma processing apparatus 1 includes (a) a reactance 511a disposed in the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, and (b) disposed in the first electrode The reactance 521a, (c) between the 105a and the ground is arranged in the reactance 511b, (d) arranged in the second path PTH2 connecting the second balanced terminal 212 and the second electrode 105b between the second electrode 105b and the ground Reactance 521b and (e) at least one of reactances 530 connecting the first path PTH1 and the second path PTH2, as affecting the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b Adjustment of the reactor.

By adjusting the frequency of the high frequency generated by the high-frequency power source 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be adjusted. Alternatively, by adjusting the frequency of the high frequency generated by the high-frequency power source 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be made the same.

In addition, in the 35th to 39th embodiments described with reference to FIGS. 49 to 53, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but the electrodes are not limited to the above, and may be configured to be arranged in a so-called rotary type. Cylindrical substrate rotating pedestal of plasma device (for example, Japanese Patent Laid-Open No. 2003-1555526, Japanese Patent Laid-Open No. 62-133065) or a rectangular-shaped substrate tray of plasma device of so-called in-line type (for example, (Japanese Patent No. 5824702, Japanese Patent Application No. 2011-144450).

In the 35th to 39th embodiments described with reference to FIGS. 49 to 53, the control unit 700 adjusts the generation of the high-frequency power source 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b The high-frequency frequency. Instead of such a configuration, the control unit 700 is configured to adjust the frequency of the high frequency generated by the high-frequency power source 101 according to the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b. The plasma strength in the vicinity of the first electrode 105a can be detected by a photoelectric conversion device, for example. Similarly, the plasma strength in the vicinity of the second electrode 105b can be detected by a photoelectric conversion device, for example. The control unit 700 may be configured based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b, for example, the plasma strength near the first electrode 105a and the second electrode 105b Adjust the frequency of the high frequency generated by the high-frequency power source 101 in such a way that the nearby plasma strength will be equal.

Next, a plasma processing method as a fortieth embodiment of the present invention will be explained. The plasma processing method of the 40th embodiment is to process the substrate 112 in the plasma processing apparatus 1 of any one of the 30th to 39th embodiments. The plasma processing method may include adjusting the high frequency generated by the high-frequency power supply 101 so that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted Frequency of the process, and the process of processing the substrate 112 after the process. This process may include a process of forming a film on the substrate 112 by sputtering or a process of etching the substrate 112.

FIG. 54 schematically shows the configuration of the plasma processing apparatus 1 according to the 41st embodiment of the present invention. The plasma processing apparatus 1 of the 41st embodiment has a configuration in which the control unit 700 is added to the plasma processing apparatus 1 of the 31st embodiment shown in FIG. 43. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. For example, the first voltage V1 will form the first target value, and the second voltage V2 will form the second target value. In this way, the frequency of the high frequency generated by the high-frequency power source 101 is adjusted. For example, the control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the first target value is formed by the first voltage V1, and the second target value is formed by the second voltage V2 Mode, and the mode in which the value of the adjustment reactor changes, a command value CNTosc that adjusts the frequency of the high frequency generated by the high-frequency power supply 101 is generated. The command value CNTosc is supplied to the high-frequency power source 101. The high-frequency power supply 101 changes the frequency of the high-frequency generated by itself according to the command value CNTosc. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

The control unit 700 generates a command value CNTmb that controls the impedance matching circuit 102. The control unit 700 controls the impedance matching circuit 102 so that the impedance matching circuit 102 becomes an impedance for plasma ignition when the plasma is ignited. In addition, the control unit 700 changes the impedance of the impedance matching circuit 102 so that the plasma becomes stable after the plasma is ignited. In the state where the plasma is stable, the impedance of the impedance matching circuit 102 is matched to the impedance Rp-jXp of the side of the body 10 at the time of plasma generation (viewed from the sides of the first balanced terminal 211 and the second balanced terminal 212 Impedance at the side of the electrode 105a and the second electrode 105b (the side of the body 10). The impedance of the impedance matching circuit 102 at this time is Rp+jXp.

The control unit 700 is, for example, a PLD (short for Programmable Logic Device) such as FPGA (short for Field Programmable Gate Array), or an ASIC (short for Application Specific Integrated Circuit), or a general-purpose or dedicated computer with a program installed , Or a combination of all or part of these. The program is stored in a memory medium (computer-readable memory medium) or may be provided via a communication line.

FIG. 40 illustrates the operation of the plasma processing apparatus 1 of the 39th embodiment. This operation can be controlled by the control unit 700. In process S401, the control unit 700 supplies the command value CNTmb to the impedance matching circuit 102 in such a manner that the impedance of the impedance matching circuit 102 is set or changed to the impedance for plasma ignition. The impedance matching circuit 102 sets or changes its own impedance according to the command value CNTmb.

Then, in the process S402 (ignition process), the control unit 700 activates (ON) the high-frequency power supply 402 in a state where the impedance of the impedance matching circuit 102 is set to the impedance for plasma ignition, causing high-frequency generation . The high frequency generated by the high-frequency power supply 402 is supplied to the first electrode 105a and the second electrode 105b through the impedance matching circuit 102, the balun 103, and the adjustment reactors (variable inductors 601a, 601b, capacitors 602a, 602b) . By this, the plasma will be ignited.

In the process S403 (matching process), the control unit 700 changes the impedance of the impedance matching circuit 102 in such a manner that the plasma becomes stable after the plasma is ignited. Specifically, in step S403, the control unit 700 determines the command value CNTmb such that the plasma-stabilized impedance is set in the impedance matching circuit 700, and supplies the command value CNTmb to the impedance matching circuit 700. The impedance matching circuit 102 sets or changes its own impedance according to the command value CNTmb.

Then, in step S404, the control unit 700 obtains the voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Then, in the process S405 (adjustment process), the control unit 700 is based on the voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b to form the first target value with the first voltage V1 and the second voltage V2 The second target value is formed, and the command value CNTosc is generated so that the values of the variable inductors 601a and 601b as variable reactances are adjusted respectively. The command value CNTosc is supplied to the high-frequency power supply 402. The high-frequency power supply 101 changes the frequency of the high-frequency generated by itself according to the command value CNTosc.

FIG. 59 illustrates the relationship between the frequency of the high frequency generated by the high-frequency power source 101 and the voltages of the first electrode 105a and the second electrode 105b. This reactance is equivalent to the aforementioned -XP. As illustrated in FIG. 59, the voltages of the first electrode 105a and the second electrode 105b adjust the reactance change of the reactor by changing the frequency of the high frequency generated by the high-frequency power supply 101, and thereby the magnitude between these Relationship replacement. In other words, the change curve of the voltage of the first electrode 105a and the second electrode 105b with respect to the change of the frequency of the high frequency generated by the high-frequency power source 101 shows the characteristic of crossing each other.

The characteristics illustrated in FIG. 59 are determined in advance by experiment or calculation, for example. In this case, in the process S405, the control unit 700 can form the first target value with the first voltage V1 and the second voltage V2 according to this characteristic and the voltage V1 of the first electrode 105a and the voltage V2 of the second electrode 105b In order to form the second target value, a command value CNTosc that adjusts the frequency of the high frequency generated by the high-frequency power source 101 is generated. When the characteristics illustrated in FIG. 59 are not determined in advance, in step S405, the control unit 700 can finely adjust the command value CNTosc based on the voltage V1 of the first electrode 105a and the voltage V2 of the second electrode 105b.

Then, in step S407, the control unit 700 obtains the voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Then, in step S408, the control unit 700 determines whether the first voltage V1 forms the first target value, the second voltage V2 forms the second target value, and when the first voltage V1 forms the first target value, the second voltage V2 forms the first 2 When the target value is reached, proceed to project S409, and if not, return to project S405. In the process S409 (processing process), the control unit 700 performs control so that the substrate 112 will be processed. This control may include, for example, controlling the opening and closing of a shutter (not shown) arranged between the target 109a and the substrate 112 and a shutter (not shown) arranged between the target 109b and the substrate 112. The processing shown in FIG. 40 can also be performed manually.

FIG. 55 schematically shows the configuration of the plasma processing apparatus 1 according to the 42nd embodiment of the present invention. The plasma processing apparatus 1 of the 42nd embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 32nd embodiment shown in FIG. 44. As for the matters not mentioned in the 42nd embodiment, it is possible to follow the 41st embodiment. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, the first target value is formed by the first voltage V1, and the first target value is formed by the first voltage V1, The second voltage V2 adjusts the frequency of the high frequency generated by the high-frequency power source 101 so that the second target value is formed. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency is CNTosc. The command value CNTosc is supplied to the high-frequency power source 101. The high-frequency power supply 101 changes the frequency of the high-frequency generated by itself according to the command value CNTosc.

FIG. 56 schematically shows the configuration of the plasma processing apparatus 1 according to the forty-third embodiment of the present invention. The plasma processing apparatus 1 of the 43rd embodiment has a configuration in which the control unit 700 is added to the plasma processing apparatus 1 of the 33rd embodiment shown in FIG. 45. As for the matters not mentioned in the 43rd embodiment, it is possible to follow the 41st embodiment. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, the first target value is formed by the first voltage V1, and the first target value is formed by the first voltage V1, The second voltage V2 adjusts the frequency of the high frequency generated by the high-frequency power source 101 so that the second target value is formed. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency is CNTosc. The command value CNTosc is supplied to the high-frequency power source 101. The high-frequency power supply 101 changes the frequency of the high-frequency generated by itself according to the command value CNTosc. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 57 schematically shows the configuration of the plasma processing apparatus 1 according to the forty-fourth embodiment of the present invention. The plasma processing apparatus 1 of the 44th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 34th embodiment shown in FIG. 46. As for the matters not mentioned in the 42nd embodiment, it is possible to follow the 41st embodiment. The control unit 700 is based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, for example, the first target value is formed by the first voltage V1, and the first target value is formed by the first voltage V1, The second voltage V2 adjusts the frequency of the high frequency generated by the high-frequency power source 101 so that the second target value is formed. For example, the control unit 700 generates a high frequency adjusted by the high-frequency power source 101 such that the value of the adjustment reactor changes based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. The command value of frequency is CNTosc. The command value CNTosc is supplied to the high-frequency power source 101. The high-frequency power supply 101 changes the frequency of the high-frequency generated by itself according to the command value CNTosc. The control unit 700 is a measurement unit that may include a first voltage V1 that measures the voltage of the first electrode 105a and a second voltage V2 that of the second electrode 105b. Alternatively, such measurement may be provided separately from the control unit 700.

FIG. 58 schematically shows the configuration of the plasma processing apparatus 1 according to the forty-fifth embodiment of the present invention. The plasma processing apparatus 1 of the 45th embodiment is operable as an etching apparatus for etching the substrates 112a and 112b. The plasma processing apparatus 1 of the forty-fifth embodiment is other than the control unit 700, and may have the same configuration as the plasma processing apparatus 1 of the twentieth embodiment. What is not mentioned as the 45th embodiment can follow the 41st embodiment.

In one configuration example, the plasma processing apparatus 1 includes: (a) a reactance 511a disposed in the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, and (b) disposed in the first Reactances 521a and (c) between electrode 105a and ground are arranged between reactance 511b and (d) of second path PTH2 connecting second balanced terminal 212 and second electrode 105b between second electrode 105b and ground At least one of the reactance 521b and (e) the reactance 530 connecting the first path PTH1 and the second path PTH2, as the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b Adjust the reactor based on the voltage relationship.

By adjusting the frequency of the high frequency generated by the high-frequency power source 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be adjusted. Alternatively, by adjusting the frequency of the high frequency generated by the high-frequency power source 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be made the same.

In addition, in the 41st to 45th embodiments described with reference to FIGS. 54 to 58, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but it is not limited to the electrodes, and may be configured to be arranged in a so-called rotary type. Cylindrical substrate rotating pedestal of plasma device (for example, Japanese Patent Laid-Open No. 2003-1555526, Japanese Patent Laid-Open No. 62-133065) or a rectangular-shaped substrate tray of plasma device of so-called in-line type (for example, (Japanese Patent No. 5824702, Japanese Patent Application No. 2011-144450)

In the 41st to 45th embodiments described with reference to FIGS. 54 to 58, the control unit 700 adjusts the generation of the high-frequency power source 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b The high-frequency frequency. Instead of such a configuration, the control unit 700 is configured to adjust the frequency of the high frequency generated by the high-frequency power source 101 according to the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b. The plasma strength in the vicinity of the first electrode 105a can be detected by a photoelectric conversion device, for example. Similarly, the plasma strength in the vicinity of the second electrode 105b can be detected by a photoelectric conversion device, for example. The control unit 700 may be configured based on the plasma strength near the first electrode 105a and the plasma strength near the second electrode 105b, for example, the plasma strength near the first electrode 105a and the second electrode 105b Adjust the frequency of the high frequency generated by the high-frequency power source 101 in such a way that the nearby plasma strength will be equal.

FIG. 60 schematically shows the configuration of the plasma processing apparatus 1 according to the forty-sixth embodiment of the present invention. The plasma processing apparatus 1 of the 46th embodiment is a modified example of the plasma processing apparatus 1 of the 23rd to 29th embodiments described with reference to FIGS. 33 to 41. The plasma processing apparatus 1 of the 46th embodiment is further provided with at least one of a mechanism for raising and lowering the first electrode 141 of the holding substrate 112 and a mechanism for rotating the first electrode 141. In the example shown in FIG. 60, the plasma processing apparatus 1 is a drive mechanism 114 that includes both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall is provided.

FIG. 61 schematically shows the configuration of the plasma processing apparatus 1 according to the 47th embodiment of the present invention. The plasma processing apparatus 1 of the 47th embodiment is a modified example of the plasma processing apparatus 1 of the 30th to 45th embodiments described with reference to FIGS. 42 to 59. The plasma processing apparatus 1 of the 47th embodiment is further provided with at least one of a mechanism for raising and lowering the first electrode 141 of the holding substrate 112 and a mechanism for rotating the first electrode 141. In the example shown in FIG. 61, the plasma processing apparatus 1 is a drive mechanism 114 that includes both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141. Between the vacuum container 110 and the drive mechanism 114, a bellows 113 constituting a vacuum partition wall is provided.

The present invention is not limited to the above-mentioned embodiments, and various changes and modifications can be implemented without departing from the spirit and scope of the present invention. Therefore, in order to make the scope of the present invention public, the following claims are attached.

1‧‧‧Plasma processing device 10‧‧‧Body 101‧‧‧High frequency power supply 102‧‧‧Impedance matching circuit 103‧‧‧ Barron 104‧‧‧Blocking capacitor 106‧‧‧First electrode 107、108‧‧‧Insulator 109‧‧‧ target 110‧‧‧Vacuum container 111‧‧‧ 2nd electrode 112‧‧‧ substrate 201‧‧‧1st unbalanced terminal 202‧‧‧ 2nd unbalanced terminal 211‧‧‧ 1st balanced terminal 212‧‧‧ 2nd balanced terminal 251‧‧‧ First terminal 252‧‧‧2nd terminal 221‧‧‧The first coil 222‧‧‧The second coil 223‧‧‧3rd coil 224‧‧‧ 4th coil 511a, 511b, 521a, 521b, 530 ‧‧‧ variable reactor 700‧‧‧Control Department

FIG. 1 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. FIG. 2A is a diagram showing a configuration example of a balun. 2B is a diagram showing another configuration example of the balun. FIG. 3 is a diagram illustrating the function of the balun 103. Fig. 4 is a diagram illustrating the relationship between currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). 5A is a graph showing the results of simulating the plasma potential and the cathode potential when 1.5≦X/Rp≦5000. 5B is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 5C is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 5D is a graph showing the results of simulating the plasma potential and the cathode potential when 1.5≦X/Rp≦5000. 6A is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 6B is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 6C is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. 6D is a graph showing the results of simulating the plasma potential and cathode potential when 1.5≦X/Rp≦5000. FIG. 7 is a diagram illustrating an Rp-jXp confirmation method. FIG. 8 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. 9 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a third embodiment of the present invention. FIG. 10 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. FIG. 11 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. FIG. 12 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. 13 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. 14 is a diagram illustrating the function of a balun according to a seventh embodiment of the present invention. 15A is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 15B is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 15C is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 15D is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 16A is a graph showing the results of simulating the plasma potential and two cathode potentials when 1.5≦X/Rp≦5000. 16B is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. 16C is a graph showing the results of simulating the plasma potential and two cathode potentials when 1.5≦X/Rp≦5000. 16D is a graph showing the results of simulating the plasma potential and the two cathode potentials when 1.5≦X/Rp≦5000. FIG. 17 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. 18 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention. FIG. 19 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the tenth embodiment of the present invention. FIG. 20 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the eleventh embodiment of the present invention. 21 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twelfth embodiment of the present invention. 22 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a thirteenth embodiment of the present invention. 23 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a fourteenth embodiment of the present invention. FIG. 24 is a diagram illustrating the function of the plasma processing apparatus 1 according to the ninth embodiment of the present invention. FIG. 25 is a diagram illustrating the function of the plasma processing apparatus 1 according to the ninth embodiment of the present invention. FIG. 26 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the fifteenth embodiment of the present invention. FIG. 27 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the sixteenth embodiment of the present invention. FIG. 28 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the seventeenth embodiment of the present invention. FIG. 29 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the eighteenth embodiment of the present invention. FIG. 30 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the nineteenth embodiment of the present invention. FIG. 31 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the twentieth embodiment of the present invention. 32 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twenty-first embodiment of the present invention. 33 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twenty-third embodiment of the present invention. 34 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 24th embodiment of the present invention. 35 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twenty-fifth embodiment of the present invention. 36 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twenty-sixth embodiment of the present invention. 37 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twenty-seventh embodiment of the present invention. 38 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the twenty-eighth embodiment of the present invention. 39 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a twenty-ninth embodiment of the present invention. FIG. 40 is a flowchart illustrating the operation of the plasma processing apparatus 1 according to the twenty-third embodiment of the present invention. 41 is a diagram illustrating the relationship between the reactance and the voltages of the first electrode and the second electrode. 42 is a diagram schematically showing the configuration of a plasma processing apparatus 1 according to a thirtieth embodiment of the present invention. 43 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the thirty-first embodiment of the present invention. 44 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 32nd embodiment of the present invention. FIG. 45 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 33rd embodiment of the present invention. 46 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 34th embodiment of the present invention. 47 is a diagram illustrating the normalized thickness distribution of the film formed on the substrate when the frequency of the high frequency generated by the high-frequency power supply is set to 12.56 MHz. 48 is a diagram illustrating the voltage of the first electrode (first voltage) and the voltage of the second electrode (second voltage) when the frequency of the high frequency generated by the high-frequency power source is changed. FIG. 49 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 35th embodiment of the present invention. FIG. 50 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 36th embodiment of the present invention. FIG. 51 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 37th embodiment of the present invention. 52 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 38th embodiment of the present invention. FIG. 53 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 39th embodiment of the present invention. FIG. 54 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 41st embodiment of the present invention. FIG. 55 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the forty-second embodiment of the present invention. 56 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the forty-third embodiment of the present invention. 57 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the forty-fourth embodiment of the present invention. FIG. 58 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the forty-fifth embodiment of the present invention. FIG. 59 is a diagram illustrating the relationship between the frequency of the high frequency generated by the high-frequency power supply and the voltages of the first electrode and the second electrode. FIG. 60 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the forty-sixth embodiment of the present invention. FIG. 61 is a diagram schematically showing the configuration of the plasma processing apparatus 1 according to the 47th embodiment of the present invention.

1‧‧‧Plasma processing device

10‧‧‧Body

101‧‧‧High frequency power supply

102‧‧‧Impedance matching circuit

103‧‧‧ Barron

105a‧‧‧First electrode

105b‧‧‧Second electrode

109a, 109b ‧‧‧ target

110‧‧‧Vacuum container

112‧‧‧ substrate

132a, 132b ‧‧‧ insulator

141‧‧‧3rd electrode

142、146‧‧‧Insulator

145‧‧‧ 4th electrode

201‧‧‧1st unbalanced terminal

202‧‧‧ 2nd unbalanced terminal

211‧‧‧ 1st balanced terminal

212‧‧‧ 2nd balanced terminal

251‧‧‧ First terminal

252‧‧‧2nd terminal

301‧‧‧ 2nd high frequency power supply

302‧‧‧The second impedance matching circuit

303‧‧‧ 2nd Barron

304‧‧‧ blocking capacitor

401‧‧‧The first unbalanced terminal

402‧‧‧The second unbalanced terminal

411‧‧‧ 1st balanced terminal

412‧‧‧ 2nd balanced terminal

451‧‧‧ Terminal 3

452‧‧‧4th terminal

601a, 601b ‧‧‧ variable inductor

602a, 602b ‧‧‧ capacitor

V1‧‧‧The first voltage

V2‧‧‧The second voltage

HS1‧‧‧The first holding surface

HS2‧‧‧Second holding surface

PTH1‧‧‧ First path

PTH2‧‧‧The second path

PL‧‧‧Plane

CNT1‧‧‧First command value

CNT2‧‧‧second command value

CNT3‧‧‧Command value

Claims (35)

A plasma processing device, characterized by: Impedance matching circuit; The balun has: a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal; The vacuum container is grounded; The first electrode is electrically connected to the first balanced terminal; The second electrode is electrically connected to the second balanced terminal; Adjusting the reactor affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; A high-frequency power supply, which generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit; and The control unit controls the impedance of the impedance matching circuit and the reactance of the adjustment reactor. A plasma processing apparatus according to item 1 of the patent application, wherein the control unit is adapted to match the first electrode and the second electrode viewed from the side of the first balanced terminal and the second balanced terminal The impedance mode at the time controls the impedance of the aforementioned impedance matching circuit. A plasma processing device as claimed in item 1 of the patent application, wherein the control unit controls the impedance of the impedance matching circuit to the impedance for ignition of the plasma, after the plasma is ignited, to match The impedance of the impedance matching circuit is controlled in such a manner that the sides of the first balanced terminal and the second balanced terminal look at the impedance of the sides of the first electrode and the second electrode. According to the plasma processing device of claim 1, the control unit controls the voltage of the first electrode to form a first target value and the voltage of the second electrode to form a second target value. The aforementioned reactance of the reactor is adjusted. According to the plasma processing device of claim 1, the control unit controls the adjustment reactor such that the difference between the voltage of the first electrode and the voltage of the second electrode forms a target difference value Reactance. A plasma processing device as claimed in item 1 of the patent scope, wherein the control unit supplies the command value for controlling the reactance of the adjustment reactor to the adjustment reactor, and the adjustment reactor is based on the command value To change your own reactance. For example, in the plasma processing device of claim 1, the high-frequency power source can change the frequency of the high-frequency power, and the control unit can adjust the relationship by changing the frequency. The command value for controlling the frequency of the high-frequency power supply is supplied to the high-frequency power supply. A plasma processing apparatus according to claim 1 of the patent application, wherein the first electrode has a first holding surface holding the first member, and the second electrode has a second holding surface holding the second member, The first holding surface and the second holding surface belong to one plane. A plasma processing apparatus according to claim 1 of the patent application, wherein the first electrode holds the first target, the second electrode holds the second target, and the first electrode intersects the first target The space on the side of the substrate to be processed is opposed, and the second electrode is opposed to the space through the second target. A plasma processing apparatus according to claim 9 of the patent application, wherein the adjustment reactor includes: (a) a variable reactor arranged in a first path connecting the first balance terminal and the first electrode , (B) a variable reactor arranged between the first electrode and the ground, (c) a variable reactor arranged on the second path connecting the second balanced terminal and the second electrode, (d) at least one variable reactor arranged between the second electrode and the ground, and (e) a variable reactor connecting the first path and the second path. A plasma processing apparatus according to claim 9 of the patent application, wherein the adjustment reactor includes a first variable reactor arranged in a first path connecting the first balanced terminal and the first electrode, And at least one second variable reactor arranged in the second path connecting the second balanced terminal and the second electrode. A plasma processing apparatus according to claim 11 of the patent application, wherein the first variable reactor includes a variable inductor, and the second variable reactor includes a variable inductor. A plasma processing device according to claim 11 of the patent application, wherein the first variable reactor includes a variable capacitor, and the second variable reactor includes a variable capacitor. A plasma processing apparatus according to claim 9 of the patent application, wherein the adjustment reactor includes: a third variable reactor arranged in a third path connecting the first electrode and the ground, and arranged in At least one fourth variable reactor that connects the second electrode to the grounded fourth path. A plasma processing apparatus according to claim 14 of the patent application, wherein the third variable reactor includes a variable capacitor, and the fourth variable reactor includes a variable capacitor. A plasma processing device according to item 14 of the patent application, wherein the third variable reactor includes a variable inductor, and the fourth variable reactor includes a variable inductor. A plasma processing apparatus according to claim 9 of the patent application, wherein the adjustment reactor includes a variable reactor connecting the first path and the second path, and the first path connects the first balanced terminal and the foregoing For the first electrode, the second path connects the second balanced terminal and the second electrode. For example, in the plasma processing device of claim 17, the variable reactor includes a variable inductor. For example, in the plasma processing device of claim 18, the variable reactor includes a variable capacitor. According to the plasma processing apparatus of claim 1, the control unit controls the adjustment reactor based on the voltage of the first electrode and the voltage of the second electrode. According to the plasma processing apparatus of claim 1, the control unit controls the adjustment reactor based on the plasma strength near the first electrode and the plasma strength near the second electrode. For example, the plasma treatment device in the first scope of the patent application, which includes: A substrate holding portion that holds the substrate; and A driving mechanism for rotating the substrate holding portion. A plasma processing apparatus according to claim 1 of the patent application, wherein the first balanced terminal and the first balanced terminal when viewed from the side of the first balanced terminal and the second balanced terminal When the resistance component between the second balanced terminals is Rp and the inductance between the first unbalanced terminal and the first balanced terminal is X, 1.5≦X/Rp≦5000 is satisfied. A plasma processing apparatus as claimed in item 1 of the patent application, wherein the balun includes a first coil connecting the first unbalanced terminal and the first balanced terminal, and connecting the second unbalanced terminal and the foregoing The second coil of the second balanced terminal. A plasma processing apparatus according to claim 24, wherein the balun further includes a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal, The third coil and the fourth coil are configured such that the voltage of the connection node between the third coil and the fourth coil is the midpoint between the voltage of the first balanced terminal and the voltage of the second balanced terminal. A plasma processing method is a plasma processing method for processing a substrate in a plasma processing device. The plasma processing device includes: Impedance matching circuit; The balun has: a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal; The vacuum container is grounded; The first electrode is electrically connected to the first balanced terminal; The second electrode is electrically connected to the second balanced terminal; Adjusting the reactor, which affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; and A high-frequency power supply that generates high frequencies supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, Its characteristics include: The matching process is to control the impedance of the impedance matching circuit in such a way that it can match the impedance when viewing the side of the first electrode and the second electrode from the side of the first balanced terminal and the second balanced terminal; Adjustment engineering, which is to adjust the aforementioned adjustment reactor in such a way as to adjust the aforementioned relationship; and The processing process is to process the substrate after the adjustment process. For example, the plasma processing method of claim 26, which further includes: the ignition process of igniting the plasma in a state where the impedance of the impedance matching circuit is set to the impedance for plasma ignition, The aforementioned matching process is carried out after the aforementioned ignition process. For example, in the plasma processing method of claim 26, the adjustment process includes: a method in which the voltage of the first electrode forms a first target value, and the voltage of the second electrode forms a second target value To control the reactance of the aforementioned adjustment reactor. For example, in the plasma processing method of claim 26, the adjustment process includes controlling the adjustment reactance such that the difference between the voltage of the first electrode and the voltage of the second electrode will form a target difference value Reactor of the device. For example, the plasma processing method of claim 26, wherein the adjustment process includes: supplying the command value for controlling the reactance of the adjustment reactor to the adjustment reactor, the adjustment reactor will follow the instruction Value to change your own reactance. For example, the plasma processing method of claim 26, wherein the high-frequency power supply can change the frequency of the high-frequency, and the adjustment process includes: a method that can adjust the relationship by changing the frequency , The command value for controlling the frequency of the high-frequency power supply is supplied to the high-frequency power supply. A program characterized in that the plasma processing method described in any one of the items 26 to 29 of the patent application scope is implemented on a computer. A memory medium characterized by storing a program for implementing the plasma processing method described in any one of the patent application items 26 to 29 in a computer. A plasma processing device, characterized by: Impedance matching circuit; The balun has: a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal; The vacuum container is grounded; The first electrode is electrically connected to the first balanced terminal; The second electrode is electrically connected to the second balanced terminal; Adjusting the reactor affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode; A high-frequency power supply, which generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit; and A measuring unit that measures the voltage of the first electrode and the voltage of the second electrode, The reactance of the adjustment reactor is adjusted according to the voltage of the first electrode and the voltage of the second electrode measured by the measurement unit. For example, in the plasma processing device of claim 34, the aforementioned adjustment reactor includes a variable inductor and a variable capacitor.

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