JP7145136B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

The present invention relates to a plasma processing apparatus.

2. Description of the Related Art There is a plasma processing apparatus that generates plasma by applying high frequency waves between two electrodes and processes a substrate with the plasma. Such a plasma processing apparatus can operate as a sputtering apparatus or as an etching apparatus depending on the area ratio and/or bias of the two electrodes. A plasma processing apparatus configured as a sputtering apparatus has a first electrode that holds a target and a second electrode that holds a substrate. A plasma is generated between the electrode and the second electrode (between the target and the substrate). The creation of the plasma produces a self-bias voltage on the surface of the target, which bombards the target with ions and ejects particles of its constituent material from the target.

U.S. Patent No. 5,300,000 describes a sputtering apparatus having a grounded chamber, a target electrode connected to an RF source through an impedance matching network, and a substrate holding electrode grounded through a substrate electrode tuning circuit. It is

In a sputtering apparatus such as that described in Patent Document 1, the chamber can function as an anode in addition to the substrate holding electrode. The self-bias voltage can depend on the state of the portion that can function as a cathode and the state of the portion that can function as an anode. Thus, if the chamber also functions as an anode in addition to the substrate holding electrode, the cell bias voltage can also vary depending on the state of the portion of the chamber that functions as the anode. Changes in the self-bias voltage result in changes in the plasma potential, which can affect the properties of the films formed.

When a film is formed on the substrate by the sputtering apparatus, the film may also be formed on the inner surface of the chamber. This can change the state of the part of the chamber that can function as the anode. Therefore, if the sputtering apparatus is continuously used, the film formed on the inner surface of the chamber changes the self-bias voltage, and the plasma potential may also change. Therefore, conventionally, it has been difficult to keep the properties of the film formed on the substrate constant even when the sputtering apparatus is used for a long period of time.

Similarly, even when the etching apparatus is used for a long period of time, the film formed on the inner surface of the chamber changes the self-bias voltage, which may change the plasma potential, thereby maintaining the substrate etching characteristics constant. It was difficult.

Japanese Patent Publication No. 55-35465

The present invention has been made based on the recognition of the above problem, and provides an advantageous technique for stabilizing the plasma potential in long-term use.
A first aspect of the present invention relates to a plasma processing apparatus, the plasma processing apparatus comprising a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, and a grounded a vacuum vessel, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a first voltage applied to the first electrode an adjustment reactance that affects the relationship with the second voltage applied to the second electrode; and a high frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal; wherein the high-frequency power supply can change the frequency of the high-frequency wave, the relationship is adjusted by changing the frequency, and the first electrode and the second electrode are connected from the first balanced terminal and the second balanced terminal side. Let Rp be the resistance component between the first balanced terminal and the second balanced terminal when looking at the two electrodes, and X be the inductance between the first unbalanced terminal and the first balanced terminal. 1.5≦X/Rp≦5000 is satisfied .
A second aspect of the present invention relates to a plasma processing method, the plasma processing method comprising a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, and a grounded a vacuum vessel, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a first voltage applied to the first electrode an adjustment reactance that affects the relationship with the second voltage applied to the second electrode; and a high frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal; a plasma processing method for processing a substrate in a plasma processing apparatus comprising: adjusting the frequency generated by the high-frequency power supply so as to adjust the relationship; and, after the step, processing the substrate. and a resistance component between the first balanced terminal and the second balanced terminal when the side of the first electrode and the second electrode is viewed from the side of the first balanced terminal and the second balanced terminal is Rp, and the inductance between the first unbalanced terminal and the first balanced terminal is X, 1.5≦X/Rp≦5000 is satisfied .

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows typically the structure of the plasma processing apparatus 1 of 1st Embodiment of this invention. FIG. 4 is a diagram showing a configuration example of a balun; FIG. 4 is a diagram showing another configuration example of a balun; 4A and 4B are diagrams for explaining the function of the balun 103; FIG. FIG. 4 is a diagram illustrating relationships among currents I1 (=I2), I2', I3, ISO, and α (=X/Rp); FIG. 10 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is satisfied; FIG. 5 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is not satisfied; FIG. 5 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is not satisfied; FIG. 5 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is not satisfied; FIG. 5 is a diagram showing simulation results of plasma potential and cathode potential when 1.5≦X/Rp≦5000 is not satisfied; The figure which illustrates the confirmation method of Rp-jXp. The figure which shows typically the structure of the plasma processing apparatus 1 of 2nd Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 3rd Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 4th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 5th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 6th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 7th Embodiment of this invention. The figure explaining the function of the balun of 7th Embodiment of this invention. FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is not satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is not satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is not satisfied; FIG. 10 is a diagram showing simulation results of a plasma potential and two cathode potentials when 1.5≦X/Rp≦5000 is not satisfied; The figure which shows typically the structure of the plasma processing apparatus 1 of 8th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 10th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 11th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 12th Embodiment of this invention. FIG. 12 is a diagram showing normalized thickness distribution of a film formed on a substrate in the plasma processing apparatus 1 according to the ninth embodiment of the present invention; FIG. 12 is a diagram illustrating changes in the voltage of the first electrode (first voltage) and the voltage of the second electrode (second voltage) when the high-frequency frequency is changed in the plasma processing apparatus 1 according to the ninth embodiment of the present invention; The figure which shows typically the structure of the plasma processing apparatus 1 of 13th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 14th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 15th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 16th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 17th Embodiment of this invention.

The invention will now be described through its exemplary embodiments with reference to the accompanying drawings.

FIG. 1 schematically shows the configuration of a plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balance-unbalance conversion circuit) 103 , a vacuum vessel 110 , a first electrode 106 and a second electrode 111 . Alternatively, plasma processing apparatus 1 may be understood as comprising balun 103 and main body 10 comprising vacuum vessel 110 , first electrode 106 and second electrode 111 . The body 10 has a first terminal 251 and a second terminal 252 . The first electrode 106 may be arranged so as to cooperate with the vacuum vessel 110 to separate the vacuum space and the external space (that is, constitute a part of the vacuum partition wall), or the vacuum vessel 110 may may be placed inside. The second electrode 111 may be arranged to cooperate with the vacuum container 110 to separate the vacuum space and the external space (that is, constitute a part of the vacuum partition), or may may be placed inside.

Balun 103 has a first unbalanced terminal 201 , a second unbalanced terminal 202 , a first balanced terminal 211 and a second balanced terminal 212 . An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103. Connected. The vacuum container 110 is composed of a conductor and grounded.

In the first embodiment, the first electrode 106 is the cathode and holds the target 109 . Target 109 can be, for example, an insulator material or a conductor material. Also, in the first embodiment, the second electrode 111 is an anode and holds the substrate 112 . The plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering the target 109 . The first electrode 106 is electrically connected to the first balanced terminal 211 and the second electrode 111 is electrically connected to the second balanced terminal 212 . The electrical connection between the first electrode 106 and the first balanced terminal 211 is such that a current flows between the first electrode 106 and the first balanced terminal 211 . 211 means that a current path is formed between them. Similarly, in this specification, a and b are electrically connected means that a current path is configured between a and b such that a current flows between a and b. means.

In the above configuration, the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211. , and the second terminal 252 is electrically connected to the second balanced terminal 212 .

In the first embodiment, the first electrode 106 and the first balanced terminal 211 (the first terminal 251) are electrically connected via the blocking capacitor 104. FIG. Blocking capacitor 104 blocks direct current between first balanced terminal 211 and first electrode 106 (or between first balanced terminal 211 and second balanced terminal 212). Instead of providing blocking capacitor 104 , impedance matching circuit 102 , which will be described later, may be configured to block direct current flowing between first unbalanced terminal 201 and second unbalanced terminal 202 . The first electrode 106 can be supported by the vacuum vessel 110 via the insulator 107 . The second electrode 111 can be supported by the vacuum vessel 110 via the insulator 108 . Alternatively, an insulator 108 can be placed between the second electrode 111 and the vacuum vessel 110 .

The plasma processing apparatus 1 may further include a high frequency power supply 101 and an impedance matching circuit 102 arranged between the high frequency power supply 101 and the balun 103 . High frequency power supply 101 supplies high frequency (high frequency current, high frequency voltage, high frequency power) between first unbalanced terminal 201 and second unbalanced terminal 202 of balun 103 via impedance matching circuit 102 . In other words, the high frequency power supply 101 supplies high frequency (high frequency current, high frequency voltage, high frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104. . Alternatively, the high frequency power source 101 can be understood as supplying high frequency power between the first terminal 251 and the second terminal 252 of the body 10 via the impedance matching circuit 102 and the balun 103 .

A gas (for example, Ar, Kr, or Xe gas) is supplied to the internal space of the vacuum vessel 110 through a gas supply unit (not shown) provided in the vacuum vessel 110 . A high frequency is supplied between the first electrode 106 and the second electrode 111 by the high frequency power supply 101 via the impedance matching circuit 102 , the balun 103 and the blocking capacitor 104 . As a result, plasma is generated between the first electrode 106 and the second electrode 111 , a self-bias voltage is generated on the surface of the target 109 , ions in the plasma collide with the surface of the target 109 , and the target 109 deviates from the target 109 . Particles of material that make up the are emitted. A film is formed on the substrate 112 by these particles.

FIG. 2A shows one configuration example of the balun 103 . The balun 103 shown in FIG. 2A includes a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211 and a second coil 221 connecting the second unbalanced terminal 202 and the second balanced terminal 212 . and a coil 222 . The first coil 221 and the second coil 222 have the same number of turns and share an iron core.

Another configuration example of the balun 103 is shown in FIG. 2B. The balun 103 shown in FIG. 2B includes a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211 and a second coil 221 connecting the second unbalanced terminal 202 and the second balanced terminal 212 . and a coil 222 . The first coil 221 and the second coil 222 have the same number of turns and share an iron core. The balun 103 shown in FIG. 2B also has a third coil 223 and a fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212, and the third coil 223 and the second The four coils 224 are configured so that the voltage at the connection node 213 between the third coil 223 and the fourth coil 224 is the middle point between the voltage at the first balanced terminal 211 and the voltage at the second balanced terminal 212 . The third coil 223 and the fourth coil 224 are coils with the same number of turns and share an iron core. The connection node 213 may be grounded, connected to the vacuum vessel 110, or left floating.

The function of the balun 103 will be described with reference to FIG. Let I1 be the current flowing through the first unbalanced terminal 201, I2 be the current flowing through the first balanced terminal 211, I2' be the current flowing through the second unbalanced terminal 202, and I3 be the current flowing to ground among the currents I2. The isolation performance of the balanced circuit to ground is best when I3=0, ie, no current flows to ground on the side of the balanced circuit. When I3=I2, ie, the current I2 flowing through the first balanced terminal 211 all flows to ground, the isolation performance of the balanced circuit to ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following formula. Under this definition, the larger the absolute value of the ISO value, the better the isolation performance.

ISO[dB]=20log(I3/I2')
In FIG. 3, Rp-jXp extends from the side of the first balanced terminal 211 and the second balanced terminal 212 to the side of the first electrode 106 and the second electrode 111 ( 10 shows the impedance (including the reactance of the blocking capacitor 104) when looking at the main body 10 side). Rp indicates a resistance component and -Xp indicates a reactance component. Also, in FIG. 3, X indicates the reactance component (inductance component) of the impedance of the first coil 221 of the balun 103 . ISO has a correlation to X/Rp.

FIG. 4 illustrates the relationship between the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The present inventors have proposed a configuration for supplying a high frequency from the high frequency power supply 101 to between the first electrode 106 and the second electrode 111 via the balun 103, particularly, satisfying 1.5≦X/Rp≦5000 in the configuration. However, in order to make the potential of the plasma (plasma potential) formed in the internal space of the vacuum vessel 110 (the space between the first electrode 106 and the second electrode 111) insensitive to the state of the inner surface of the vacuum vessel 110 found to be advantageous for Here, the insensitivity of the plasma potential to the state of the inner surface of the vacuum vessel 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 corresponds to −10.0 dB≧ISO≧−80 dB.

5A to 5D show simulation results of the plasma potential and the potential of the first electrode 106 (cathode potential) when 1.5≦X/Rp≦5000 is satisfied. FIG. 5A shows the plasma potential and the cathode potential when no film is formed on the inner surface of the vacuum vessel 110. FIG. FIG. 5B shows the plasma potential and cathode potential with a resistive film (1000Ω) formed on the inner surface of the vacuum vessel 110 . FIG. 5C shows plasma potential and cathode potential with an inductive film (0.6 μH) formed on the inner surface of the vacuum vessel 110 . FIG. 5D shows plasma potential and cathode potential with a capacitive film (0.1 nF) formed on the inner surface of the vacuum vessel 110 . From FIGS. 5A to 5D, it is understood that satisfying 1.5≦X/Rp≦5000 is advantageous for stabilizing the plasma potential in various states of the inner surface of the vacuum vessel 110. FIG.

6A to 6D show simulation results of the plasma potential and the potential of the first electrode 106 (cathode potential) when 1.5≦X/Rp≦5000 is not satisfied. FIG. 6A shows the plasma potential and the cathode potential when no film is formed on the inner surface of the vacuum vessel 110. FIG. FIG. 6B shows the plasma potential and cathode potential with a resistive film (1000Ω) formed on the inner surface of the vacuum vessel 110 . FIG. 6C shows plasma potential and cathode potential with an inductive film (0.6 μH) formed on the inner surface of the vacuum vessel 110 . FIG. 6D shows the plasma potential and cathode potential with a capacitive film (0.1 nF) formed on the inner surface of the vacuum vessel 110 . 6A to 6D, it is understood that the plasma potential can change depending on the state of the inner surface of the vacuum vessel 110 if 1.5≦X/Rp≦5000 is not satisfied.

Here, when X/Rp>5000 (e.g., X/Rp=∞) and when X/Rp<1.5 (e.g., X/Rp=1.0, X/Rp=0.5) In both cases, the plasma potential is likely to change depending on the state of the inner surface of the vacuum vessel 110 . When X/Rp>5000, discharge occurs only between the first electrode 106 and the second electrode 111 when no film is formed on the inner surface of the vacuum vessel 110 . However, when X/Rp>5000, when a film begins to form on the inner surface of the vacuum vessel 110, the plasma potential reacts sensitively, resulting in the results illustrated in FIGS. 6A-6D. On the other hand, when X/Rp<1.5, the current flowing through the vacuum vessel 110 to the ground is large. becomes remarkable, and the plasma potential changes depending on the formation of the film. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

A method for determining Rp-jXp (only Rp is actually desired to be known) will be exemplified with reference to FIG. First, the balun 103 is removed from the plasma processing apparatus 1 , and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104 ) of the main body 10 . Also, the second terminal 252 (second electrode 111) of the main body 10 is grounded. In this state, a high frequency is supplied from the high frequency power supply 101 to the first terminal 251 of the main body 10 through the impedance matching circuit 102 . In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently composed of coils L1, L2 and variable capacitors VC1, VC2. Plasma can be generated by adjusting the capacitance values of the variable capacitors VC1 and VC2. When the plasma is stable, the impedance of the impedance matching circuit 102 matches the impedance Rp-jXp on the side of the main body 10 (the side of the first electrode 106 and the second electrode 111) when plasma is generated. . The impedance of the impedance matching circuit 102 at this time is Rp+jXp.

Therefore, based on the impedance Rp+jXp of the impedance matching circuit 102 when the impedances are matched, Rp−jXp (only Rp is actually desired) can be obtained. Alternatively, Rp-jXp can be obtained by simulation based on design data, for example.

Based on Rp thus obtained, X/Rp can be specified. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5≦X/Rp≦5000.

FIG. 8 schematically shows the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. The plasma processing apparatus 1 of the second embodiment can operate as an etching apparatus that etches the substrate 112 . In the second embodiment, the first electrode 106 is the cathode and holds the substrate 112 . Also, in the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 of the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104 . In other words, in the plasma processing apparatus 1 of the second embodiment, the blocking capacitor 104 is arranged in the electrical connection path between the first electrode 106 and the first balanced terminal 211 .

FIG. 9 schematically shows the configuration of a plasma processing apparatus 1 according to the third embodiment of the invention. The plasma processing apparatus 1 of the third embodiment is a modification of the plasma processing apparatus 1 of the first embodiment, and further includes at least one of a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9 , the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for raising and lowering the second electrode 111 and a mechanism for rotating the second electrode 111 . A bellows 113 forming a vacuum partition may be provided between the vacuum container 110 and the driving mechanism 114 .

Similarly, the plasma processing apparatus 1 of the second embodiment may also include at least one of a mechanism for raising and lowering the first electrode 106 and a mechanism for rotating the second electrode 106 .

FIG. 10 schematically shows the configuration of a plasma processing apparatus 1 according to the fourth embodiment of the invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned in the plasma processing apparatus 1 of the fourth embodiment can follow the first to third embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum vessel 110, a first electrode 106 and a second electrode 135 forming a first set, and a first electrode 141 forming a second set. and a second electrode 145 . Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, wherein the main body 10 includes a vacuum vessel 110, and a first electrode 106 and a second electrode 135 forming a first set. , and a first electrode 141 and a second electrode 145 forming a second set. The body 10 has a first terminal 251 , a second terminal 252 , a third terminal 451 and a fourth terminal 452 .

The first balun 103 has a first unbalanced terminal 201 , a second unbalanced terminal 202 , a first balanced terminal 211 and a second balanced terminal 212 . An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 have a , to which the balance circuit is connected. The second balun 303 may have a configuration similar to that of the first balun 103 . The second balun 303 has a first unbalanced terminal 401 , a second unbalanced terminal 402 , a first balanced terminal 411 and a second balanced terminal 412 . An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 are connected to the unbalanced circuit. , to which the balance circuit is connected. Vacuum vessel 110 is grounded.

A first set of first electrodes 106 hold a target 109 . Target 109 can be, for example, an insulator material or a conductor material. A first set of second electrodes 135 are arranged around the first electrodes 106 . The first set of electrodes 106 is electrically connected to the first balanced terminal 211 of the first balun 103 and the first set of second electrodes 135 is electrically connected to the second balanced terminal 212 of the first balun 103 . It is connected to the. A second set of first electrodes 141 hold the substrate 112 . A second set of second electrodes 145 are arranged around the first electrodes 141 . The second set of first electrodes 141 is electrically connected to the first balanced terminal 411 of the second balun 303 and the second set of second electrodes 145 is electrically connected to the second balanced terminal 412 of the second balun 303 . It is connected to the.

In the above configuration, the first set of first electrodes 106 is electrically connected to the first terminal 251, the first set of second electrodes 135 is electrically connected to the second terminal 252, and the first terminal 251 is It can be understood as a configuration in which the first balanced terminal 211 of the first balun 103 is electrically connected and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103 . In the above configuration, the second set of first electrodes 141 is electrically connected to the third terminal 451, the second set of second electrodes 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303 .

The first set of first electrodes 106 and the first balanced terminal 211 (first terminal 251 ) of the first balun 103 can be electrically connected via the blocking capacitor 104 . A blocking capacitor 104 is placed between the first balanced terminal 211 of the first balun 103 and the first set of first electrodes 106 (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). to cut off the DC current. Instead of providing blocking capacitor 104, first impedance matching circuit 102 may be configured to block direct current flowing between first unbalanced terminal 201 and second unbalanced terminal 202 of first balun 103. good. A first set of first electrode 106 and second electrode 135 may be supported by vacuum vessel 110 via insulator 132 .

The second set of first electrodes 141 and the first balanced terminal 411 (the third terminal 451 ) of the second balun 303 can be electrically connected via the blocking capacitor 304 . A blocking capacitor 304 is placed between the first balanced terminal 411 of the second balun 303 and the second set of first electrodes 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). to cut off the DC current. Instead of providing blocking capacitor 304, second impedance matching circuit 302 may be configured to block direct current flowing between first unbalanced terminal 201 and second unbalanced terminal 202 of second balun 303. good. A second set of first electrode 141 and second electrode 145 may be supported by vacuum vessel 110 via insulator 142 .

The plasma processing apparatus 1 may include a first high frequency power supply 101 and a first impedance matching circuit 102 arranged between the first high frequency power supply 101 and the first balun 103 . A first high-frequency power supply 101 supplies high-frequency power between a first unbalanced terminal 201 and a second unbalanced terminal 202 of a first balun 103 via a first impedance matching circuit 102 . In other words, the first high frequency power supply 101 supplies high frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102 , the first balun 103 and the blocking capacitor 104 . Alternatively, the first high-frequency power supply 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103 . The first balun 103 and the first set of the first electrode 106 and the second electrode 135 constitute a first high frequency supply section that supplies high frequency to the internal space of the vacuum vessel 110 .

The plasma processing apparatus 1 may comprise a second RF power supply 301 and a second impedance matching circuit 302 arranged between the second RF power supply 301 and the second balun 303 . A second high-frequency power supply 301 supplies high-frequency power between a first unbalanced terminal 401 and a second unbalanced terminal 402 of a second balun 303 via a second impedance matching circuit 302 . In other words, the second high-frequency power supply 301 supplies high-frequency power between the second set of first electrodes 141 and second electrodes 145 via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304. . Alternatively, the second high-frequency power supply 301 supplies high-frequency power between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303 . The second balun 303 and the second set of the first electrode 141 and the second electrode 145 constitute a second high frequency supply section that supplies a high frequency to the internal space of the vacuum vessel 110 .

In a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of the high frequency from the first high frequency power supply 101, the first pair of first balanced terminals 211 and 212 of the first balun 103 is connected to the first balanced terminal 211 and the second balanced terminal 212 side. Let Rp1-jXp1 be the impedance when looking at the first electrode 106 and the second electrode 135 side (body 10 side). Let X1 be the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 . In this definition, satisfying 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110 .

In addition, while plasma is being generated in the internal space of the vacuum vessel 110 by the supply of the high frequency from the second high frequency power supply 301, the second set from the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is operated. Let Rp2-jXp2 be the impedance when viewing the side of the first electrode 141 and the second electrode 145 (the side of the main body 10). Let X2 be the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 . In this definition, satisfying 1.5≦X2/Rp2≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110 .

FIG. 11 schematically shows the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. The apparatus 1 of the fifth embodiment has a configuration in which drive mechanisms 114 and 314 are added to the plasma processing apparatus 1 of the fourth embodiment. The driving mechanism 114 can include at least one of a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141 . The drive mechanism 314 can include a mechanism for raising and lowering the second electrode 145 .

FIG. 12 schematically shows the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned in the sixth embodiment may follow the first to fifth embodiments. A plasma processing apparatus 1 of the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first RF feeds may include a first electrode 106a, a second electrode 135a, and a first balun 103a. Another one of the plurality of first RF feeds may include a first electrode 106b, a second electrode 135b, and a first balun 103b. Here, an example in which the plurality of first high-frequency supply units is composed of two high-frequency supply units will be described. Also, the two RF feeds and their associated components are distinguished from each other by the subscripts a, b. Similarly, the two targets are also distinguished from each other by subscripts a and b.

In another aspect, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, a vacuum vessel 110, a first electrode 106a and a second electrode 135a, a first electrode 106b and a second It has an electrode 135 b , a first electrode 141 and a second electrode 145 . Alternatively, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, and a main body 10, the main body 10 comprising a vacuum vessel 110, a first electrode 106a and a second electrode 135a, It may be understood as comprising a first electrode 106b and a second electrode 135b, and a first electrode 141 and a second electrode 145. FIG. The main body 10 has first terminals 251 a and 251 b, second terminals 252 a and 252 b, a third terminal 451 and a fourth terminal 452 .

The first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a and a second balanced terminal 212a. An unbalanced circuit is connected to the first unbalanced terminal 201a and the second unbalanced terminal 202a side of the first balun 103a, and the first balanced terminal 211a and the second balanced terminal 212a side of the first balun 103a , to which the balance circuit is connected. The first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b and a second balanced terminal 212b. An unbalanced circuit is connected to the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b have a , to which the balance circuit is connected.

The second balun 303 may have a similar configuration as the first baluns 103a, 103b. The second balun 303 has a first unbalanced terminal 401 , a second unbalanced terminal 402 , a first balanced terminal 411 and a second balanced terminal 412 . An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 are connected to the unbalanced circuit. , to which the balance circuit is connected. Vacuum vessel 110 is grounded.

The first electrodes 106a, 106b hold targets 109a, 109b, respectively. Targets 109a, 109b can be, for example, an insulator material or a conductor material. The second electrodes 135a, 135b are arranged around the first electrodes 106a, 106b, respectively. The first electrodes 106a, 106b are electrically connected to the first balanced terminals 211a, 211b of the first baluns 103a, 103b, respectively, and the second electrodes 135a, 135b are electrically connected to the second balanced terminals of the first baluns 103a, 103b, respectively. 212a, 212b.

The first electrode 141 holds the substrate 112 . A second electrode 145 is arranged around the first electrode 141 . The first electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303 and the second electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303 .

In the above configuration, the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, respectively, the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, respectively, and the first terminals 251a, 251b are electrically connected to first balanced terminals 211a, 111b of first baluns 103a, 103b, respectively, and second terminals 252a, 252b are electrically connected to second balanced terminals 212a, 212b of first baluns 103a, 103b, respectively. can be understood as a physically connected configuration. Also, in the above configuration, the first electrode 141 is electrically connected to the third terminal 451 , the second electrode 145 is electrically connected to the fourth terminal 452 , and the third terminal 451 is the third terminal of the second balun 303 . 1 balanced terminal 411 and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303 .

The first electrodes 106a, 106b and the first balanced terminals 211a, 211b (first terminals 251a, 251b) of the first baluns 103a, 103b may be electrically connected through blocking capacitors 104a, 104b, respectively. The blocking capacitors 104a, 104b are provided between the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first electrodes 106a, 106b (or between the first balanced terminals 211a, 211b of the first baluns 103a, 103b and the first electrodes 106a, 106b). 2 balanced terminals 212a and 212b). Instead of providing the blocking capacitors 104a, 104b, the first impedance matching circuits 102a, 102b provide direct current flowing between the first unbalanced terminals 201a, 201b and the second unbalanced terminals 202a, 202b of the first baluns 103a, 103b. It may be configured to interrupt current. Alternatively, the blocking capacitors 104a, 104b may be placed between the second electrodes 135a, 135b and the second balanced terminals 212a, 212b (second terminals 252a, 252b) of the first baluns 103a, 103b. The first electrodes 106a, 106b and the second electrodes 135a, 135b can be supported by the vacuum vessel 110 via insulators 132a, 132b, respectively.

The first electrode 141 and the first balanced terminal 411 (the third terminal 451 ) of the second balun 303 may be electrically connected through the blocking capacitor 304 . The blocking capacitor 304 conducts direct current between the first balanced terminal 411 and the first electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off. Instead of providing blocking capacitor 304, second impedance matching circuit 302 may be configured to block direct current flowing between first unbalanced terminal 201 and second unbalanced terminal 202 of second balun 303. good. Alternatively, blocking capacitor 304 may be placed between second electrode 145 and second balanced terminal 412 (fourth terminal 452 ) of second balun 303 . The first electrode 141 and the second electrode 145 can be supported by the vacuum vessel 110 via insulators 142 .

The plasma processing apparatus 1 includes a plurality of first high-frequency power sources 101a and 101b, first impedance matching circuits 102a respectively arranged between the plurality of first high-frequency power sources 101a and 101b and the plurality of first baluns 103a and 103b, 102b. First high-frequency power sources 101a and 101b provide high-frequency power sources between first unbalanced terminals 201a and 201b and second unbalanced terminals 202a and 202b of first baluns 103a and 103b via first impedance matching circuits 102a and 102b, respectively. supply. In other words, the first high-frequency power sources 101a and 101b connect the first electrodes 106a and 106b and the second electrodes 135a, 135b to supply high frequency. Alternatively, the first high-frequency power sources 101a, 101b are connected between the first terminals 251a, 251b and the second terminals 252a, 252b of the main body 10 via the first impedance matching circuits 102a, 102b and the first baluns 103a, 103b. supply high frequency.

The plasma processing apparatus 1 may comprise a second RF power supply 301 and a second impedance matching circuit 302 arranged between the second RF power supply 301 and the second balun 303 . A second high-frequency power supply 301 supplies high-frequency power between a first unbalanced terminal 401 and a second unbalanced terminal 402 of a second balun 303 via a second impedance matching circuit 302 . In other words, the second high frequency power supply 301 supplies high frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302 , the second balun 303 and the blocking capacitor 304 . Alternatively, the second high-frequency power supply 301 supplies high-frequency power between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303 .

FIG. 13 schematically shows the configuration of the plasma processing apparatus 1 according to the seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned in the plasma processing apparatus 1 of the seventh embodiment can follow the first to sixth embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum vessel 110, a first electrode 105a and a second electrode 105b forming a first set, and a first electrode 141 forming a second set. and a second electrode 145 . Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, wherein the main body 10 includes a vacuum vessel 110, and a first electrode 105a and a second electrode 105b forming a first set. , and a first electrode 141 and a second electrode 145 forming a second set. The body 10 has a first terminal 251 , a second terminal 252 , a third terminal 451 and a fourth terminal 452 .

The first balun 103 has a first unbalanced terminal 201 , a second unbalanced terminal 202 , a first balanced terminal 211 and a second balanced terminal 212 . An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 have a , to which the balance circuit is connected. The second balun 303 may have a configuration similar to that of the first balun 103 . The second balun 303 has a first unbalanced terminal 401 , a second unbalanced terminal 402 , a first balanced terminal 411 and a second balanced terminal 412 . An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 are connected to the unbalanced circuit. , to which the balance circuit is connected. Vacuum vessel 110 is grounded.

A first set of first electrodes 105a holds a first target 109a and faces the space on the side of the substrate 112 via the first target 109a. A first set of second electrodes 105b is arranged next to the first electrode 105a, holds a second target 109b, and faces the space on the substrate 112 side via the second target 109b. Targets 109a and 109b can be, for example, an insulator material or a conductor material. The first set of electrodes 105 a is electrically connected to the first balanced terminal 211 of the first balun 103 and the first set of second electrodes 105 b is electrically connected to the second balanced terminal 212 of the first balun 103 . It is connected to the.

A second set of first electrodes 141 hold the substrate 112 . A second set of second electrodes 145 are arranged around the first electrodes 141 . The second set of first electrodes 141 is electrically connected to the first balanced terminal 411 of the second balun 303 and the second set of second electrodes 145 is electrically connected to the second balanced terminal 412 of the second balun 303 . It is connected to the.

In the above configuration, the first set of first electrodes 105a is electrically connected to the first terminal 251, the first set of second electrodes 105b is electrically connected to the second terminal 252, and the first terminal 251 is It can be understood as a configuration in which the first balanced terminal 211 of the first balun 103 is electrically connected and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103 . In the above configuration, the second set of first electrodes 141 is electrically connected to the third terminal 451, the second set of second electrodes 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303 .

The first set of first electrodes 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via a blocking capacitor 104a. A blocking capacitor 104a is placed between the first balanced terminal 211 of the first balun 103 and the first set of first electrodes 105a (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). to cut off the DC current. The first set of second electrodes 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via a blocking capacitor 104b. A blocking capacitor 104b is placed between the second balanced terminal 212 of the first balun 103 and the first set of second electrodes 105b (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). to cut off the DC current. A first set of first electrodes 105a and second electrodes 105b can be supported by the vacuum vessel 110 via insulators 132a and 132b, respectively.

The second set of first electrodes 141 and the first balanced terminal 411 (the third terminal 451 ) of the second balun 303 can be electrically connected via the blocking capacitor 304 . A blocking capacitor 304 is placed between the first balanced terminal 411 of the second balun 303 and the second set of first electrodes 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). to cut off the DC current. Instead of providing blocking capacitor 304, second impedance matching circuit 302 may be configured to block direct current flowing between first unbalanced terminal 401 and second unbalanced terminal 402 of second balun 303. good. A second set of first electrodes 141 and second electrodes 145 can be supported by the vacuum vessel 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 may include a first high frequency power supply 101 and a first impedance matching circuit 102 arranged between the first high frequency power supply 101 and the first balun 103 . A first high frequency power supply 101 supplies a high frequency between a first electrode 105a and a second electrode 105b via a first impedance matching circuit 102, a first balun 103, and blocking capacitors 104a and 104b. Alternatively, the first high-frequency power supply 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103 . The first balun 103 and the first set of first electrode 105 a and second electrode 105 b constitute a first high frequency supply section that supplies high frequency to the internal space of the vacuum vessel 110 .

The plasma processing apparatus 1 may comprise a second RF power supply 301 and a second impedance matching circuit 302 arranged between the second RF power supply 301 and the second balun 303 . A second high-frequency power supply 301 supplies high-frequency power between a first unbalanced terminal 401 and a second unbalanced terminal 402 of a second balun 303 via a second impedance matching circuit 302 . A second high frequency power supply 301 supplies a high frequency between a second set of first electrodes 141 and second electrodes 145 via a second impedance matching circuit 302 , a second balun 303 and a blocking capacitor 304 . Alternatively, the second high-frequency power supply 301 supplies high-frequency power between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303 . The second balun 303 and the second set of the first electrode 141 and the second electrode 145 constitute a second high frequency supply section that supplies a high frequency to the internal space of the vacuum vessel 110 .

In a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of the high frequency from the first high frequency power supply 101, the first pair of first balanced terminals 211 and 212 of the first balun 103 is connected to the first balanced terminal 211 and the second balanced terminal 212 side. The impedance when looking at the first electrode 105a and the second electrode 105b side (body 10 side) is defined as Rp1-jXp1. Let X1 be the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 . In this definition, satisfying 1.5≦X1/Rp1≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110 .

In addition, while plasma is being generated in the internal space of the vacuum vessel 110 by the supply of the high frequency from the second high frequency power supply 301, the second set from the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is operated. Let Rp2-jXp2 be the impedance when looking at the first electrode 127 and the second electrode 130 side (body 10 side). Let X2 be the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 . In this definition, satisfying 1.5≦X2/Rp2≦5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110 .

The plasma processing apparatus 1 of the seventh embodiment can further include at least one of a mechanism for raising and lowering the first electrodes 141 forming the second group and a mechanism for rotating the first electrodes 141 forming the second group. In the example shown in FIG. 13 , the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for raising and lowering the first electrode 141 and a mechanism for rotating the first electrode 141 . In addition, in the example shown in FIG. 13, the plasma processing apparatus 1 includes a mechanism 314 that raises and lowers the second electrode 145 that constitutes the second set. A bellows forming a vacuum partition may be provided between the vacuum vessel 110 and the drive mechanism 114 , 314 .

The function of the first balun 103 in the plasma processing apparatus 1 of the seventh embodiment shown in FIG. 13 will be described with reference to FIG. Let I1 be the current flowing through the first unbalanced terminal 201, I2 be the current flowing through the first balanced terminal 211, I2' be the current flowing through the second unbalanced terminal 202, and I3 be the current flowing to ground among the currents I2. The isolation performance of the balanced circuit to ground is best when I3=0, ie, no current flows to ground on the side of the balanced circuit. When I3=I2, ie, the current I2 flowing through the first balanced terminal 211 all flows to ground, the isolation performance of the balanced circuit to ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following formula, as in the first to fifth embodiments. Under this definition, the larger the absolute value of the ISO value, the better the isolation performance.

ISO[dB]=20log(I3/I2')
In FIG. 14, Rp-jXp (=Rp/2-jXp/2+Rp/2-jXp/2) is the first balanced terminal 211 and the second balanced terminal when plasma is generated in the internal space of the vacuum vessel 110. The impedance (including reactances of blocking capacitors 104a and 104b) when viewing the first electrode 105a and second electrode 105b side (body 10 side) from the 212 side is shown. Rp indicates a resistance component and -Xp indicates a reactance component. 14, X indicates the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103. In FIG. ISO has a correlation to X/Rp.

FIG. 4 referred to in the description of the first embodiment exemplifies the relationships among the currents I1 (=I2), I2', I3, ISO, and α (=X/Rp). The relationship of FIG. 4 also holds true in the seventh embodiment. In the seventh embodiment, the inventor also found that 1.5≦X/Rp≦5000 is formed in the internal space of the vacuum vessel 110 (the space between the first electrode 105a and the second electrode 105b). It has been found to be advantageous for making the potential of the plasma applied (plasma potential) insensitive to the state of the inner surface of the vacuum vessel 110. Here, the insensitivity of the plasma potential to the state of the inner surface of the vacuum vessel 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5≦X/Rp≦5000 corresponds to −10.0 dB≧ISO≧−80 dB.

15A to 15D show simulation results of the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when 1.5≦X/Rp≦5000 is satisfied. It is shown. FIG. 15A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when a resistive film (1 mΩ) is formed on the inner surface of the vacuum vessel 110. is shown. FIG. 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when a resistive film (1000Ω) is formed on the inner surface of the vacuum vessel 110. is shown. FIG. 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential). FIG. 15D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential). From FIGS. 15A to 15D, it is understood that satisfying 1.5≦X/Rp≦5000 is advantageous for stabilizing the plasma potential in various states of the inner surface of the vacuum vessel 110. FIG.

16A to 16D show simulations of the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when 1.5≦X/Rp≦5000 is not satisfied. Results are shown. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when a resistive film (1 mΩ) is formed on the inner surface of the vacuum vessel 110. is shown. FIG. 16B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when a resistive film (1000Ω) is formed on the inner surface of the vacuum vessel 110. is shown. FIG. 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential). FIG. 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential). 16A to 16D, it is understood that the plasma potential changes depending on the state of the inner surface of the vacuum vessel 110 when 1.5≦X/Rp≦5000 is not satisfied.

Here, when X/Rp>5000 (for example, X/Rp=∞) and when X/Rp<1.5 (for example, X/Rp=1.16, X/Rp=0.87) In both cases, the plasma potential is likely to change depending on the state of the inner surface of the vacuum vessel 110 . When X/Rp>5000, discharge occurs only between the first electrode 105a and the second electrode 105b when the film is not formed on the inner surface of the vacuum vessel 110 . However, when X/Rp>5000, when a film begins to form on the inner surface of the vacuum vessel 110, the plasma potential reacts sensitively, resulting in the results illustrated in FIGS. 16A-16D. On the other hand, when X/Rp<1.5, the current flowing through the vacuum vessel 110 to the ground is large. becomes remarkable, and the plasma potential changes depending on the formation of the film. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5≦X/Rp≦5000.

FIG. 17 schematically shows the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. The plasma processing apparatus of the eighth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned in the plasma processing apparatus 1 of the eighth embodiment can follow the first to seventh embodiments. The plasma processing apparatus 1 of the eighth embodiment includes a balun (first balun) 103, a vacuum vessel 110, a first electrode 105a, and a second electrode 105b. Alternatively, the plasma processing apparatus 1 may be understood as comprising the balun 103 and the body 10, the body 10 comprising the vacuum vessel 110, the first electrode 105a and the second electrode 105b. The body 10 has a first terminal 251 and a second terminal 252 .

The first electrode 105a has a first holding surface HS1 that holds a first target 109a as a first member, and the second electrode 105b has a second holding surface HS2 that holds a second target 109b as a second member. can have The first holding surface HS1 and the second holding surface HS2 can belong to one plane PL.

The plasma processing apparatus 1 of the eighth embodiment may further include a second balun 303 , a third electrode 141 and a fourth electrode 145 . In other words, the plasma processing apparatus 1 includes the first balun 103, the second balun 303, the vacuum vessel 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. be prepared. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, wherein the main body 10 includes a vacuum vessel 110, a first electrode 105a, a second electrode 105b, and a third electrode. 141 and a fourth electrode 145 . The body 10 has a first terminal 251 , a second terminal 252 , a third terminal 451 and a fourth terminal 452 .

The first balun 103 has a first unbalanced terminal 201 , a second unbalanced terminal 202 , a first balanced terminal 211 and a second balanced terminal 212 . An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103 have a , to which the balance circuit is connected. The second balun 303 may have a configuration similar to that of the first balun 103 . The second balun 303 has a third unbalanced terminal 401 , a fourth unbalanced terminal 402 , a third balanced terminal 411 and a fourth balanced terminal 412 . An unbalanced circuit is connected to the third unbalanced terminal 401 and the fourth unbalanced terminal 402 side of the second balun 303, and an unbalanced circuit is connected to the third balanced terminal 411 and the fourth balanced terminal 412 side of the second balun 303. , to which the balance circuit is connected. Vacuum vessel 110 is grounded. Baluns 103, 303 may, for example, have the configuration described in FIGS. 2A, 2B (FIG. 14).

The first electrode 105a holds a first target 109a and faces the space on the side of the substrate 112 to be processed via the first target 109a. The second electrode 105b is arranged next to the first electrode 105a, holds a second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b. Targets 109a and 109b can be, for example, an insulator material or a conductor material. The first electrode 105 a is electrically connected to the first balanced terminal 211 of the first balun 103 and the second electrode 105 b is electrically connected to the second balanced terminal 212 of the first balun 103 .

A third electrode 141 holds the substrate 112 . A fourth electrode 145 may be disposed around the third electrode 141 . The third electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303 .

The above configuration is such that the first electrode 105a is electrically connected to the first terminal 251, the second electrode 105b is electrically connected to the second terminal 252, and the first terminal 251 is the first balance terminal of the first balun 103. It can be understood as a configuration electrically connected to the terminal 211 and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103 . Also, in the above configuration, the third electrode 141 is electrically connected to the third terminal 451 , the fourth electrode 145 is electrically connected to the fourth terminal 452 , and the third terminal 451 is the third terminal of the second balun 303 . 1 balanced terminal 411 and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303 .

The first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected by the first path PTH1. A reactance 511a may be arranged on the first path PTH1. In other words, the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the reactance 511a. The reactance 511a can include a capacitor between the first balanced terminal 211 of the first balun 103 and the first electrode 105a (or between the first balanced terminal 211 of the first balun 103 and the second balanced terminal 211). terminal 212) can function as a blocking capacitor to block DC current. The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected by the second path PTH2. A reactance 511b may be arranged on the second path PTH2. In other words, the second electrode 105b and the second balanced terminal 212 (the third terminal 252) of the first balun 103 can be electrically connected via the reactance 511b. The reactance 511b can include a capacitor between the second balanced terminal 212 of the first balun 103 and the second electrode 105b (or between the first balanced terminal 211 of the first balun 103 and the second balanced terminal 211). terminal 212) can function as a blocking capacitor to block DC current. The first electrode 105a and the second electrode 105b can be supported by the vacuum vessel 110 via insulators 132a and 132b, respectively.

The plasma processing apparatus 1 may comprise a reactance 521a arranged between the first electrode 105a and ground. The plasma processing apparatus 1 may comprise a reactance 521b arranged between the second electrode 105b and ground. The plasma processing apparatus 1 can include a reactance 530 connecting the first path PTH1 and the second path PTH2.

In one configuration example, the plasma processing apparatus 1 includes (a) a second (b) a reactance 521a arranged between the first electrode 105a and the ground; (c) a second balanced terminal. 212 and the second electrode 105b, (d) a reactance 521b arranged between the second electrode 105b and ground, and (e) the first path PTH1 and at least one reactance 530 connecting with the second path PTH2. The third electrode 141 and the first balanced terminal 411 (third terminal 451 ) of the second balun 303 may be electrically connected through the blocking capacitor 304 . The blocking capacitor 304 conducts direct current between the first balanced terminal 411 and the third electrode 141 of the second balun 303 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off. Instead of providing blocking capacitor 304, second impedance matching circuit 302 may be configured to block direct current flowing between first unbalanced terminal 401 and second unbalanced terminal 402 of second balun 303. good. The third electrode 141 and the fourth electrode 145 can be supported by the vacuum vessel 110 via insulators 142 and 146, respectively.

The plasma processing apparatus 1 can include a first high-frequency power supply 101 that generates high-frequency waves supplied between a first unbalanced terminal 201 and a second unbalanced terminal 202 . The high frequency power supply 101 can change the frequency of the high frequency supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202 . By changing the frequency, the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted. Alternatively, by changing the frequency, the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted.

Therefore, by adjusting the frequency, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. Alternatively, by adjusting the frequency, the balance between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted. This makes it possible to adjust the relationship between the consumption of the first target 109a and the consumption of the second target 109b. Alternatively, the balance between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Such a configuration is advantageous, for example, in order to reduce downtime of the plasma processing apparatus 1 by synchronizing the exchange timing of the first target 109a and the exchange timing of the second target 109b. Also, by adjusting the frequency, the thickness distribution of the film formed on the substrate 112 can be adjusted.

The plasma processing apparatus 1 may further include a first impedance matching circuit 102 arranged between the first high frequency power supply 101 and the first balun 103 . The first high frequency power supply 101 supplies high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103 and the first path PTH1. Alternatively, the first high-frequency power supply 101 supplies high-frequency power between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103 . The first balun 103 , the first electrode 105 a and the second electrode 105 b constitute a first high frequency supply section that supplies high frequency to the internal space of the vacuum vessel 110 .

The plasma processing apparatus 1 may comprise a second RF power supply 301 and a second impedance matching circuit 302 arranged between the second RF power supply 301 and the second balun 303 . A second high-frequency power supply 301 supplies high-frequency power between a first unbalanced terminal 401 and a second unbalanced terminal 402 of a second balun 303 via a second impedance matching circuit 302 . A second high frequency power supply 301 supplies a high frequency between the third electrode 141 and the fourth electrode 145 via a second impedance matching circuit 302 , a second balun 303 and a blocking capacitor 304 . Alternatively, the second high-frequency power supply 301 supplies high-frequency power between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303 . The second balun 303 , the third electrode 141 and the fourth electrode 145 constitute a second high frequency supply section that supplies high frequency to the internal space of the vacuum vessel 110 .

The first electrode 105a and the first electrode 105a and the first electrode 105a and the first electrode 105a and the first electrode 105a and the first electrode 105a and the first electrode 105a and the first electrode 105a and The impedance when looking at the second electrode 105b side (body 10 side) is defined as Rp1-jXp1. Let X1 be the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 . In this definition, satisfying 1.5≦X1/Rp1≦5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of vacuum vessel 110 . However, it should be noted that satisfying the condition 1.5≦X/Rp1≦5000 is not essential in the eighth embodiment, but is an advantageous condition. In the eighth embodiment, by providing the balun 103, the plasma potential can be stabilized more than when the balun 103 is not provided. Further, by providing the high frequency power supply 101 capable of changing the frequency of the generated high frequency, the relationship between the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be adjusted.

In addition, while plasma is being generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the second high frequency power supply 301, the third electrode is supplied from the first balanced terminal 411 and the second balanced terminal 412 side of the second balun 303 to the third electrode. Let Rp2-jXp2 be the impedance when looking at the side of 141 and the fourth electrode 145 (the side of the main body 10). Let X2 be the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 . In this definition, satisfying 1.5≦X2/Rp2≦5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of vacuum vessel 110 . However, it should be noted that satisfying the condition 1.5≤X/Rp2≤5000 is not essential in the eighth embodiment, but is an advantageous condition.

Hereinafter, ninth to twelfth embodiments that embody the plasma processing apparatus 1 of the eighth embodiment will be described with reference to FIGS. 18 to 23. FIG. FIG. 18 schematically shows the configuration of the plasma processing apparatus 1 according to the ninth embodiment of the present invention. Matters not mentioned in the ninth embodiment may follow the eighth embodiment. The plasma processing apparatus 1 of the ninth embodiment includes at least one of a reactance 511a arranged on the first path PTH1 and a reactance 511b arranged on the second path PTH2. Here, the plasma processing apparatus 1 preferably includes both the reactance 511a arranged on the first path PTH1 and the reactance 511b arranged on the second path PTH2.

First reactance 511a may include inductor 601a and capacitor 602a. The inductor 601a may be arranged between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be arranged between the capacitor 602a and the first electrode 105a. Second reactance 511b may include inductor 601b and capacitor 602b. The inductor 601b may be arranged between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be arranged between the capacitor 602b and the second electrode 105b.

FIG. 22 shows the normalized thickness distribution of the film formed on the substrate 112 when the frequency of the high frequency generated by the high frequency power supply 101 is set to 12.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. It is shown. 22 shows the normalized thickness of the film formed on the substrate 112 when the frequency of the high frequency generated by the high frequency power supply 101 is set to 13.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. Distributions are shown. The horizontal axis indicates the position in the horizontal direction (the direction parallel to the surface of the substrate 112) in FIG. 18, and indicates the distance from the center of the substrate 112. When the frequency of the high frequency generated by the high frequency power supply 101 is 12.56 MHz, the thickness distribution of the film on the left side and the right side of the center of the substrate 112 is significantly different. On the other hand, when the frequency of the high frequency generated by the high frequency power supply 101 is 13.56 MHz, the film thickness distribution is highly symmetrical between the left and right sides of the center of the substrate 112 . When the frequency of the high frequency generated by the high frequency power source 101 is 13.56 MHz, the first voltage applied to the first electrode 105a is greater than when the frequency of the high frequency generated by the high frequency power source 101 is 12.56 MHz. It is well balanced with the second voltage applied to the second electrode 105b.

FIG. 23 shows the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (first voltage) when the frequency of the high frequency generated by the high frequency power supply 101 is changed in the plasma processing apparatus 1 of the ninth embodiment. second voltage) is illustrated. By changing the frequency of the high frequency generated by the high frequency power supply 101, the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted. Alternatively, the relationship between the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted by changing the frequency of the high frequency generated by the high frequency power supply 101. FIG. For example, the frequency of the high frequency generated by the high frequency power supply 101 can be adjusted so that the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) are equal. Thereby, the amount of sputtering of the first target 109a and the amount of sputtering of the second target 109b can be the same. This is advantageous, for example, in order to reduce downtime of the plasma processing apparatus 1 by synchronizing the replacement timing of the first target 109a and the replacement timing of the second target 109b.

FIG. 19 schematically shows the configuration of the plasma processing apparatus 1 according to the tenth embodiment of the present invention. Matters not mentioned in the tenth embodiment can follow the eighth embodiment. The plasma processing apparatus 1 of the tenth embodiment includes at least one of a reactance 521a arranged between the first electrode 105a and ground, and a reactance 521b arranged between the second electrode 105b and ground. ing. Reactance 521a may include, for example, inductor 607a and capacitor 606a. Reactance 521b may include, for example, inductor 607b and capacitor 606b.

The plasma processing apparatus 1 further includes a reactance 511a (in this example, an inductor 603a and a capacitor 602a) arranged on the first path PTH1, and a reactance 511b (in this example, an inductor 603b and a capacitor 602a) arranged on the second path PTH2. 602b).

FIG. 20 schematically shows the configuration of the plasma processing apparatus 1 according to the eleventh embodiment of the present invention. Matters not mentioned in the eleventh embodiment may follow the eighth embodiment. The plasma processing apparatus 1 of the thirteenth embodiment includes an inductor 608 as a reactance 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 further includes a reactance 511a (in this example, an inductor 603a and a capacitor 602a) arranged on the first path PTH1, and a reactance 511b (in this example, an inductor 603b and a capacitor 602a) arranged on the second path PTH2. 602b).

FIG. 21 schematically shows the configuration of the plasma processing apparatus 1 according to the twelfth embodiment of the present invention. Matters not mentioned in the twelfth embodiment can follow the eighth embodiment. The plasma processing apparatus 1 of the twelfth embodiment includes a capacitor 609 as a variable reactance 530 connecting the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 further includes a reactance 511a (in this example, an inductor 603a and a capacitor 602a) arranged on the first path PTH1, and a reactance 511b (in this example, an inductor 603b and a capacitor 602a) arranged on the second path PTH2. 602b).

In the ninth to twelfth embodiments described with reference to FIGS. 18 to 23, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b. Cylindrical substrate rotating holders in the plasma apparatus (for example, JP-A-2003-1555526, JP-A-62-133065) and rectangular substrate trays in the so-called in-line type plasma apparatus (for example, Japanese Patent No. 5824072, Japanese Patent Laid-Open No. 2011-144450) may be arranged.

Hereinafter, the operation of adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. . FIG. 24 schematically shows the configuration of the plasma processing apparatus 1 according to the thirteenth embodiment of the present invention. The plasma processing apparatus 1 of the thirteenth embodiment has a configuration obtained by adding a controller 700 to the plasma processing apparatus 1 of the ninth embodiment shown in FIG. Based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the control unit 700 controls the high-frequency power supply 101 so that the first voltage V1 and the second voltage V2 are equal, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

FIG. 25 schematically shows the configuration of the plasma processing apparatus 1 according to the fourteenth embodiment of the present invention. The plasma processing apparatus 1 of the fourteenth embodiment has a configuration obtained by adding a controller 700 to the plasma processing apparatus 1 of the tenth embodiment shown in FIG. Based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the control unit 700 controls the high-frequency power supply 101 so that the first voltage V1 and the second voltage V2 are equal, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

FIG. 26 schematically shows the configuration of the plasma processing apparatus 1 according to the fifteenth embodiment of the present invention. The plasma processing apparatus 1 of the fifteenth embodiment has a configuration obtained by adding a controller 700 to the plasma processing apparatus 1 of the eleventh embodiment shown in FIG. Based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the control unit 700 controls the high-frequency power supply 101 so that the first voltage V1 and the second voltage V2 are equal, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

FIG. 27 schematically shows the configuration of the plasma processing apparatus 1 according to the sixteenth embodiment of the present invention. The plasma processing apparatus 1 of the sixteenth embodiment has a configuration obtained by adding a controller 700 to the plasma processing apparatus 1 of the twelfth embodiment shown in FIG. Based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b, the control unit 700 controls the high-frequency power supply 101 so that the first voltage V1 and the second voltage V2 are equal, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

FIG. 28 schematically shows the configuration of the plasma processing apparatus 1 according to the seventeenth embodiment of the present invention. The plasma processing apparatus 1 of the seventeenth embodiment can operate as an etching apparatus for etching the substrates 112a and 112b. In the plasma processing apparatus 1 of the seventeenth embodiment, the first electrode 105a and the second electrode 105b hold the first substrate 112a and the second substrate 112b to be etched, respectively, and the third electrode 141 does not hold the substrate. Unlike the plasma processing apparatus 1 of the eighth embodiment, it can have the same configuration as the plasma processing apparatus 1 of the eighth embodiment in other respects.

In one configuration example, the plasma processing apparatus 1 includes (a) a second (b) a reactance 521a arranged between the first electrode 105a and the ground; (c) a second balanced terminal. 212 and the second electrode 105b, (d) a reactance 521b arranged between the second electrode 105b and ground, and (e) the first path PTH1 and at least one reactance 530 connecting with the second path PTH2.

By adjusting the frequency of the high frequency generated by the high frequency power supply 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be adjusted. Alternatively, by adjusting the frequency of the high frequency generated by the high frequency power supply 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be made the same.

In the thirteenth to sixteenth embodiments described with reference to FIGS. 24 to 27, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b. Cylindrical substrate rotating holders in the plasma apparatus (for example, JP-A-2003-1555526, JP-A-62-133065) and rectangular substrate trays in the so-called in-line type plasma apparatus (for example, Japanese Patent No. 5824072, Japanese Patent Laid-Open No. 2011-144450) may be arranged.

In the thirteenth to sixteenth embodiments described with reference to FIGS. 24 to 27, the control unit 700 controls the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the frequency of the high frequency that occurs. Instead of such a configuration, the control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 based on the plasma intensity near the first electrode 105a and the plasma intensity near the second electrode 105b. may be configured. The plasma intensity in the vicinity of the first electrode 105a can be detected by, for example, a photoelectric conversion device. Similarly, the plasma intensity in the vicinity of the second electrode 105b can be detected by, for example, a photoelectric conversion device. Based on the plasma intensity in the vicinity of the first electrode 105a and the plasma intensity in the vicinity of the second electrode 105b, for example, the control unit 700 determines the plasma intensity in the vicinity of the first electrode 105a and the plasma intensity in the vicinity of the second electrode 105b. The frequency of the high frequency generated by the high frequency power supply 101 can be configured to be equal to .

Next, a plasma processing method as a seventeenth embodiment of the present invention will be described. A plasma processing method as the seventeenth embodiment processes a substrate 112 in the plasma processing apparatus 1 of any one of the eighth to sixteenth embodiments. The plasma processing method adjusts the frequency of the high frequency generated by the high frequency power supply 101 so as to adjust the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b. and processing the substrate 112 after the step. The processing may include forming a film on the substrate 112 by sputtering or etching the substrate 112 .

The present invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the present invention. Accordingly, to publicize the scope of the invention, the following claims are included.

1: plasma processing apparatus, 10: main body, 101: high frequency power supply, 102: impedance matching circuit, 103: balun, 104: blocking capacitor, 106: first electrode, 107, 108: insulator, 109: target, 110: vacuum Container 111: Second electrode 112: Substrate 201: First unbalanced terminal 202: Second unbalanced terminal 211: First balanced terminal 212: Second balanced terminal 251: First terminal 252: Second terminal, 221: first coil, 222: second coil, 223: third coil, 224: fourth coil, 511a, 511b, 521a, 521b, 530: reactance, 700: control unit

Claims (18)

a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal;
a grounded vacuum vessel;
a first electrode electrically connected to the first balanced terminal;
a second electrode electrically connected to the second balanced terminal;
an adjustment reactance that affects the relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode;
a high frequency power supply that generates a high frequency to be supplied between the first unbalanced terminal and the second unbalanced terminal;
The high-frequency power supply can change the frequency of the high-frequency power, and the relationship is adjusted by changing the frequency, and the first electrode and the second electrode are connected from the side of the first balanced terminal and the second balanced terminal. When the resistance component between the first balanced terminal and the second balanced terminal when viewed from the side is Rp, and the inductance between the first unbalanced terminal and the first balanced terminal is X, , satisfying 1.5≦X/Rp≦5000,
A plasma processing apparatus characterized by: The first electrode has a first holding surface that holds the first member, the second electrode has a second holding surface that holds the second member, and the first holding surface and the second holding surface A face belongs to one plane,
2. The plasma processing apparatus according to claim 1, wherein: The first electrode holds a first target, the second electrode holds a second target, the first electrode faces a space on the side of the substrate to be processed through the first target, The second electrode faces the space through the second target,
3. The plasma processing apparatus according to claim 1, wherein: The adjustment reactance includes (a) a reactance arranged in a first path connecting the first balanced terminal and the first electrode, (b) a reactance arranged between the first electrode and ground, ( c) a reactance arranged in a second path connecting said second balanced terminal and said second electrode; (d) a reactance arranged between said second electrode and ground; and (e) said second a reactance connecting the first path and the second path,
4. The plasma processing apparatus according to claim 3, wherein: The adjusting reactance includes a first reactance arranged on a first path connecting the first balanced terminal and the first electrode, and a second path connecting the second balanced terminal and the second electrode. an arranged second reactance;
4. The plasma processing apparatus according to claim 3, wherein: the first reactance includes an inductor;
the second reactance includes an inductor;
6. The plasma processing apparatus according to claim 5, wherein: the first reactance includes a capacitor;
the second reactance includes a capacitor,
7. The plasma processing apparatus according to claim 5 or 6, characterized in that: The adjustment reactance includes a third reactance arranged on a third path connecting the first electrode and ground, and a fourth reactance arranged on a fourth path connecting the second electrode and ground. including at least one
4. The plasma processing apparatus according to claim 3, wherein: the third reactance includes a capacitor,
The fourth reactance includes a capacitor,
9. The plasma processing apparatus according to claim 8, wherein: the third reactance includes an inductor;
the fourth reactance includes an inductor;
10. The plasma processing apparatus according to claim 8 or 9, characterized in that: The adjusting reactance includes a reactance connecting a first path connecting the first balanced terminal and the first electrode and a second path connecting the second balanced terminal and the second electrode,
4. The plasma processing apparatus according to claim 3, wherein: the reactance includes an inductor,
12. The plasma processing apparatus according to claim 11, wherein: the reactance includes a capacitor,
13. The plasma processing apparatus according to claim 11 or 12, characterized in that: Further comprising a control unit that controls the frequency of the high frequency generated by the high frequency power supply based on the voltage of the first electrode and the voltage of the second electrode,
14. The plasma processing apparatus according to any one of claims 1 to 13, characterized in that: The balun has a first coil that connects the first unbalanced terminal and the first balanced terminal, and a second coil that connects the second unbalanced terminal and the second balanced terminal,
15. The plasma processing apparatus according to any one of claims 1 to 14 , characterized in that: The balun further comprises a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal, the third coil and the fourth coil being connected to the third coil. The voltage of the connection node with the fourth coil is configured to be the middle point between the voltage of the first balanced terminal and the voltage of the second balanced terminal.
16. The plasma processing apparatus according to claim 15 , wherein: an impedance matching circuit disposed between the high frequency power supply and the balun;
17. The plasma processing apparatus according to any one of claims 1 to 16 , further comprising: a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum vessel, and a first electrode electrically connected to the first balanced terminal; a second electrode electrically connected to the second balanced terminal; and an adjustment reactance that affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode. and a high-frequency power source that generates high-frequency waves that are supplied between the first unbalanced terminal and the second unbalanced terminal, and a plasma processing method for processing a substrate in a plasma processing apparatus,
adjusting the frequency of the radio frequency generated by the radio frequency power source such that the relationship is adjusted;
after the step, processing the substrate ;
Let Rp be a resistance component between the first balanced terminal and the second balanced terminal when the first electrode and the second electrode are viewed from the first balanced terminal and the second balanced terminal. , where 1.5≦X/Rp≦5000, where X is the inductance between the first unbalanced terminal and the first balanced terminal;
A plasma processing method characterized by:

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