JP6656481B2 - Plasma processing apparatus and method - Google Patents

Description

  The present invention relates to a plasma processing apparatus.

  There is a plasma processing apparatus that generates plasma by applying a high frequency between two electrodes and processes a substrate with the plasma. Such a plasma processing apparatus can operate as a sputtering apparatus or operate as an etching apparatus depending on the area ratio and / or bias of two electrodes. A plasma processing apparatus configured as a sputtering apparatus has a first electrode that holds a target and a second electrode that holds a substrate, and a high frequency is applied between the first electrode and the second electrode. Plasma is generated between the electrode and the second electrode (between the target and the substrate). The generation of the plasma generates a self-bias voltage on the surface of the target, which causes ions to bombard the target and emit particles of the constituent material from the target.

  Patent Document 1 describes a sputtering apparatus having a grounded chamber, a target electrode connected to an RF generator via an impedance matching network, and a substrate holding electrode grounded via a substrate electrode tuning circuit. Have been.

  In the sputtering apparatus described in Patent Document 1, in addition to the substrate holding electrode, the chamber can function as an anode. The self-bias voltage may depend on the state of the part that can function as a cathode and the state of the part that can function as an anode. Therefore, when the chamber also functions as an anode in addition to the substrate holding electrode, the cell bias voltage may change depending on the state of a portion of the chamber that functions as an anode. A change in the self-bias voltage results in a change in the plasma potential, and the change in the plasma potential can affect the properties of the formed film.

  When a film is formed on a substrate by a sputtering apparatus, a film may be formed on the inner surface of the chamber. This can change the state of a portion of the chamber that can function as an anode. Therefore, if the sputtering apparatus is continuously used, the self-bias voltage changes depending on the film formed on the inner surface of the chamber, and the plasma potential may change. Therefore, conventionally, when a sputtering apparatus has been used for a long period of time, it has been difficult to keep the characteristics of a film formed on a substrate constant.

  Similarly, even when the etching apparatus is used for a long period of time, the film formed on the inner surface of the chamber changes the self-bias voltage, which may change the plasma potential, so that the etching characteristics of the substrate are kept constant. It was difficult.

JP-B-55-35465

The present invention has been made based on the recognition of the above problems, and provides an advantageous technique for stabilizing a plasma potential in long-term use. A first aspect of the present invention relates to a plasma processing apparatus, The plasma processing apparatus is electrically connected to a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum vessel, and the first balanced terminal. A first electrode, a second electrode electrically connected to the second balanced terminal, and a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode. A high-frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal, the high-frequency power supply being capable of changing the frequency of the high-frequency power And the change of the frequency Thus, the relationship is adjusted.
A second aspect of the present invention relates to a plasma processing method, wherein the plasma processing method is configured such that a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal is grounded. A vacuum vessel, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a first voltage applied to the first electrode. An adjusting reactance that affects a relationship with a second voltage applied to the second electrode, a high-frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal, A plasma processing method for processing a substrate in a plasma processing apparatus comprising: a step of adjusting a frequency generated by the high-frequency power supply so that the relationship is adjusted; and, after the step, a step of processing the substrate. including.

FIG. 1 is a diagram schematically illustrating a configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. The figure which shows the example of a structure of a balun. The figure which shows the other example of a structure of a balun. FIG. 4 is a diagram illustrating functions of a balun 103. The figure which illustrates the relationship of current I1 (= I2), I2 ', I3, ISO, and alpha (= X / Rp). The figure which shows the result of having simulated the plasma potential and the cathode potential in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case where 1.5 <X / Rp <5000 is not satisfied. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case where 1.5 <X / Rp <5000 is not satisfied. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case where 1.5 <X / Rp <5000 is not satisfied. The figure which shows the result of having simulated the plasma potential and the cathode potential in the case where 1.5 <X / Rp <5000 is not satisfied. The figure which illustrates the confirmation method of Rp-jXp. The figure which shows typically the structure of the plasma processing apparatus 1 of 2nd Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 3rd Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 4th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 5th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 6th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 7th Embodiment of this invention. The figure explaining the function of the balun of 7th Embodiment of this invention. The figure which shows the result of having simulated the plasma potential and two cathode potentials in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and two cathode potentials in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and two cathode potentials in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and two cathode potentials in the case of 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma electric potential and two cathode electric potential when 1.5 <X / Rp <5000 is not satisfy | filled. The figure which shows the result of having simulated the plasma electric potential and two cathode electric potential when 1.5 <X / Rp <5000 is not satisfy | filled. The figure which shows the result of having simulated the plasma electric potential and two cathode electric potential when 1.5 <X / Rp <5000 is not satisfy | filled. The figure which shows the result of having simulated the plasma electric potential and two cathode electric potential when 1.5 <X / Rp <5000 is not satisfy | filled. The figure which shows typically the structure of the plasma processing apparatus 1 of 8th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 10th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 11th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 12th Embodiment of this invention. The figure which shows the normalized thickness distribution of the film | membrane formed in the board | substrate in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the change of the voltage (1st voltage) of the 1st electrode and the voltage (2nd voltage) of a 2nd electrode when changing the frequency of a high frequency in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 13th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 14th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 15th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 16th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 17th Embodiment of this invention.

  Hereinafter, the present invention will be described through exemplary embodiments with reference to the accompanying drawings.

  FIG. 1 schematically shows a configuration of a plasma processing apparatus 1 according to a first embodiment of the present invention. The plasma processing apparatus according to the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balance-unbalance conversion circuit) 103, a vacuum vessel 110, a first electrode 106, and a second electrode 111. Alternatively, it may be understood that the plasma processing apparatus 1 includes the balun 103 and the main body 10, and the main body 10 includes the vacuum vessel 110, the first electrode 106, and the second electrode 111. The main body 10 has a first terminal 251 and a second terminal 252. The first electrode 106 may be arranged so as to cooperate with the vacuum vessel 110 to separate the vacuum space and the external space (that is, to constitute a part of a vacuum partition), It may be arranged inside. The second electrode 111 may be arranged so as to cooperate with the vacuum container 110 to separate the vacuum space and the external space (that is, to form a part of a vacuum partition), It may be arranged inside.

  The balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103. Connected. The vacuum vessel 110 is made of a conductor and is grounded.

  In the first embodiment, the first electrode 106 is a cathode and holds the target 109. The target 109 can be, for example, an insulator material or a conductor material. In the first embodiment, the second electrode 111 is an anode and holds the substrate 112. The plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The fact that the first electrode 106 and the first balanced terminal 211 are electrically connected means that the current flows between the first electrode 106 and the first balanced terminal 211 so that the current flows between the first electrode 106 and the first balanced terminal 211. 211 means that a current path is formed. Similarly, in this specification, “a and b are electrically connected” means that a current path is configured between a and b so that a current flows between a and b. means.

  In the above configuration, the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211. , And the second terminal 252 is electrically connected to the second balanced terminal 212.

  In the first embodiment, the first electrode 106 and the first balanced terminal 211 (first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks DC current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of providing the blocking capacitor 104, an impedance matching circuit 102 described later may be configured to block a direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 can be supported by the vacuum vessel 110 via the insulator 107. The second electrode 111 can be supported by the vacuum vessel 110 via the insulator 108. Alternatively, the insulator 108 may be disposed between the second electrode 111 and the vacuum vessel 110.

  The plasma processing apparatus 1 may further include a high-frequency power supply 101 and an impedance matching circuit 102 disposed between the high-frequency power supply 101 and the balun 103. The high frequency power supply 101 supplies a high frequency (high frequency current, high frequency voltage, high frequency power) between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103 via the impedance matching circuit 102. In other words, the high frequency power supply 101 supplies a high frequency (high frequency current, high frequency voltage, high frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. . Alternatively, the high-frequency power supply 101 may be understood as supplying high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the impedance matching circuit 102 and the balun 103.

  Gas (for example, Ar, Kr or Xe gas) is supplied to the internal space of the vacuum vessel 110 through a gas supply unit (not shown) provided in the vacuum vessel 110. A high frequency is supplied between the first electrode 106 and the second electrode 111 by the high frequency power supply 101 via the impedance matching circuit 102, the balun 103, and the blocking capacitor 104. As a result, plasma is generated between the first electrode 106 and the second electrode 111, a self-bias voltage is generated on the surface of the target 109, and ions in the plasma collide with the surface of the target 109 and are deflected from the target 109. The particles of the material comprising are released. Then, a film is formed on the substrate 112 by the particles.

  FIG. 2A shows one configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 221 that connects the second unbalanced terminal 202 and the second balanced terminal 212. And a coil 222. The first coil 221 and the second coil 222 are coils having the same number of turns and share an iron core.

  FIG. 2B shows another configuration example of the balun 103. The balun 103 illustrated in FIG. 2B includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil that connects the second unbalanced terminal 202 and the second balanced terminal 212. And a coil 222. The first coil 221 and the second coil 222 are coils having the same number of turns and share an iron core. The balun 103 shown in FIG. 2B further includes a third coil 223 and a fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212. The four coil 224 is configured so that the voltage at the connection node 213 between the third coil 223 and the fourth coil 224 is the midpoint between the voltage at the first balanced terminal 211 and the voltage at the second balanced terminal 212. The third coil 223 and the fourth coil 224 are coils having the same number of turns and share an iron core. The connection node 213 may be grounded, may be connected to the vacuum vessel 110, or may be floating.

  The function of the balun 103 will be described with reference to FIG. The current flowing through the first unbalanced terminal 201 is denoted by I1, the current flowing through the first balanced terminal 211 is denoted by I2, the current flowing through the second unbalanced terminal 202 is denoted by I2 ', and the current I2 flowing to the ground is denoted by I3. When I3 = 0, that is, when no current flows to the ground on the side of the balanced circuit, the isolation performance of the balanced circuit with respect to the ground is the best. When I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows with respect to the ground, the isolation performance of the balanced circuit with respect to the ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following equation. Under this definition, the larger the absolute value of the ISO value, the better the isolation performance.

ISO [dB] = 20 log (I3 / I2 ′)
In FIG. 3, Rp-jXp is from the side of the first balanced terminal 211 and the second balanced terminal 212 to the side of the first electrode 106 and the second electrode 111 in a state where plasma is generated in the internal space of the vacuum vessel 110. The figure shows the impedance (including the reactance of the blocking capacitor 104) when viewing the main body 10 side. Rp indicates a resistance component, and -Xp indicates a reactance component. In FIG. 3, X represents a reactance component (inductance component) of the impedance of the first coil 221 of the balun 103. ISO has a correlation to X / Rp.

  FIG. 4 illustrates the relationship among the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). The present inventor has a configuration in which high frequency is supplied between the first electrode 106 and the second electrode 111 from the high frequency power supply 101 via the balun 103, and in particular, the configuration satisfies 1.5 ≦ X / Rp ≦ 5000. Is to make the potential (plasma potential) of the plasma formed in the internal space of the vacuum vessel 110 (the space between the first electrode 106 and the second electrode 111) insensitive to the state of the inner surface of the vacuum vessel 110. Was found to be advantageous. Here, the fact that the plasma potential becomes insensitive to the state of the inner surface of the vacuum vessel 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 corresponds to −10.0 dB ≧ ISO ≧ −80 dB.

  5A to 5D show simulation results of the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 5A shows the plasma potential and the cathode potential when no film is formed on the inner surface of the vacuum vessel 110. FIG. 5B shows the plasma potential and the cathode potential when a resistive film (1000Ω) is formed on the inner surface of the vacuum vessel 110. FIG. 5C shows the plasma potential and the cathode potential when an inductive film (0.6 μH) is formed on the inner surface of the vacuum vessel 110. FIG. 5D shows the plasma potential and the cathode potential when a capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110. 5A to 5D, it is understood that satisfying 1.5 ≦ X / Rp ≦ 5000 is advantageous for stabilizing the plasma potential of the inner surface of the vacuum vessel 110 in various states.

  6A to 6D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. FIG. 6A shows the plasma potential and the cathode potential when no film is formed on the inner surface of the vacuum vessel 110. FIG. 6B shows the plasma potential and the cathode potential when a resistive film (1000Ω) is formed on the inner surface of the vacuum vessel 110. FIG. 6C shows the plasma potential and the cathode potential when an inductive film (0.6 μH) is formed on the inner surface of the vacuum vessel 110. FIG. 6D shows the plasma potential and the cathode potential when a capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110. 6A to 6D, it is understood that when 1.5 ≦ X / Rp ≦ 5000 is not satisfied, the plasma potential may change depending on the state of the inner surface of the vacuum vessel 110.

  Here, X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.0, X / Rp = 0.5) In both cases, the plasma potential is likely to change depending on the state of the inner surface of the vacuum vessel 110. When X / Rp> 5000, a discharge occurs only between the first electrode 106 and the second electrode 111 in a state where a film is not formed on the inner surface of the vacuum vessel 110. However, when X / Rp> 5000, when a film starts to form on the inner surface of the vacuum vessel 110, the plasma potential reacts sensitively to the film, resulting in the results illustrated in FIGS. 6A to 6D. On the other hand, when X / Rp <1.5, since a large amount of current flows into the ground via the vacuum vessel 110, the influence of the state of the inner surface of the vacuum vessel 110 (electrical characteristics of a film formed on the inner surface) is obtained. And the plasma potential changes depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

  An example of a method of determining Rp-jXp (only Rp that one actually wants to know) will be described with reference to FIG. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the main body 10. Further, the second terminal 252 (second electrode 111) of the main body 10 is grounded. In this state, high frequency is supplied from the high frequency power supply 101 to the first terminal 251 of the main body 10 through the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently composed of coils L1 and L2 and variable capacitors VC1 and VC2. By adjusting the capacitance values of the variable capacitors VC1 and VC2, plasma can be generated. When the plasma is stable, the impedance of the impedance matching circuit 102 matches the impedance Rp-jXp of the main body 10 (the first electrode 106 and the second electrode 111) when the plasma is generated. . At this time, the impedance of the impedance matching circuit 102 is Rp + jXp.

  Therefore, based on the impedance Rp + jXp of the impedance matching circuit 102 when the impedance is matched, it is possible to obtain Rp-jXp (only Rp is what one actually wants to know). Rp-jXp can be obtained by simulation based on design data, for example.

  X / Rp can be specified based on Rp thus obtained. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

  FIG. 8 schematically shows a configuration of a plasma processing apparatus 1 according to the second embodiment of the present invention. The plasma processing apparatus 1 of the second embodiment can operate as an etching apparatus for etching the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. In the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 of the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 according to the second embodiment, the blocking capacitor 104 is disposed in an electrical connection path between the first electrode 106 and the first balanced terminal 211.

  FIG. 9 schematically shows a configuration of a plasma processing apparatus 1 according to the third embodiment of the present invention. The plasma processing apparatus 1 according to the third embodiment is a modification of the plasma processing apparatus 1 according to the first embodiment, and further includes at least one of a mechanism for moving the second electrode 111 up and down and a mechanism for rotating the second electrode 111. In the example illustrated in FIG. 9, the plasma processing apparatus 1 includes a driving mechanism 114 including both a mechanism for moving the second electrode 111 up and down and a mechanism for rotating the second electrode 111. A bellows 113 constituting a vacuum partition may be provided between the vacuum vessel 110 and the driving mechanism 114.

  Similarly, the plasma processing apparatus 1 of the second embodiment can further include at least one of a mechanism for moving the first electrode 106 up and down and a mechanism for rotating the second electrode 106.

  FIG. 10 schematically shows a configuration of a plasma processing apparatus 1 according to a fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus for forming a film on the substrate 112 by sputtering. Items not mentioned as the plasma processing apparatus 1 of the fourth embodiment can follow the first to third embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum vessel 110, a first electrode 106 and a second electrode 135 forming a first set, and a first electrode 141 forming a second set. And a second electrode 145. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum vessel 110, a first electrode 106 and a second electrode 135 forming a first set. And the first electrode 141 and the second electrode 145 that constitute the second set. The main body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

  The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the unbalanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103. , A balancing circuit is connected. The second balun 303 can have the same configuration as the first balun 103. The second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the unbalanced circuit is connected to the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. , A balancing circuit is connected. The vacuum vessel 110 is grounded.

  The first set of first electrodes 106 holds a target 109. The target 109 can be, for example, an insulator material or a conductor material. The first set of second electrodes 135 is arranged around the first electrode 106. The first set of first electrodes 106 is electrically connected to the first balanced terminal 211 of the first balun 103, and the first set of second electrodes 135 is electrically connected to the second balanced terminal 212 of the first balun 103. It is connected to the. The second set of first electrodes 141 holds the substrate 112. The second set of second electrodes 145 is arranged around the first electrode 141. The second set of first electrodes 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second set of second electrodes 145 is electrically connected to the second balanced terminal 412 of the second balun 303. It is connected to the.

  In the above configuration, the first set of first electrodes 106 is electrically connected to the first terminal 251, the first set of second electrodes 135 is electrically connected to the second terminal 252, and the first terminal 251 is connected to the first terminal 251. It can be understood as a configuration in which the first balun 103 is electrically connected to the first balanced terminal 211 and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. Further, in the above configuration, the second set of first electrodes 141 is electrically connected to the third terminal 451, the second set of second electrodes 145 is electrically connected to the fourth terminal 452, and the third terminal 451 may be understood as being electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

  The first pair of first electrodes 106 and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the blocking capacitor 104. The blocking capacitor 104 is between the first balanced terminal 211 of the first balun 103 and the first set of first electrodes 106 (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). To cut off the DC current. Instead of providing the blocking capacitor 104, the first impedance matching circuit 102 may be configured to cut off a DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. Good. The first set of the first electrode 106 and the second electrode 135 may be supported by the vacuum vessel 110 via the insulator 132.

  The first electrode 141 of the second set and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is between the first balanced terminal 411 of the second balun 303 and the second set of first electrodes 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). To cut off the DC current. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block a DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Good. The second pair of the first electrode 141 and the second electrode 145 may be supported by the vacuum vessel 110 via the insulator 142.

  The plasma processing apparatus 1 can include a first high-frequency power supply 101 and a first impedance matching circuit 102 disposed between the first high-frequency power supply 101 and the first balun 103. The first high-frequency power supply 101 supplies a high frequency between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103 via the first impedance matching circuit 102. In other words, the first high frequency power supply 101 supplies a high frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103, and the blocking capacitor 104. Alternatively, the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first set of the first electrode 106 and the second electrode 135 constitute a first high-frequency supply unit that supplies a high frequency to the internal space of the vacuum vessel 110.

  The plasma processing apparatus 1 can include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 of the second set via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. . Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the second set of the first electrode 141 and the second electrode 145 constitute a second high-frequency supply unit that supplies a high frequency to the internal space of the vacuum vessel 110.

  In a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the first high frequency power supply 101, a first set of first and second balanced terminals 211 and 212 of the first balun 103 are arranged from the first and second balanced terminals 211 and 212. The impedance when viewing the side of the first electrode 106 and the second electrode 135 (the side of the main body 10) is defined as Rp1-jXp1. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is defined as X1. In this definition, satisfying 1.5 ≦ X1 / Rp1 ≦ 5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110.

  Further, in a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the second high frequency power supply 301, the second pair of the second balun 303 from the side of the first balanced terminal 411 and the second balanced terminal 412 is formed. Let Rp2-jXp2 be the impedance when viewing the first electrode 141 and the second electrode 145 (the side of the main body 10). Further, the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is defined as X2. In this definition, satisfying 1.5 ≦ X2 / Rp2 ≦ 5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110.

  FIG. 11 schematically shows a configuration of a plasma processing apparatus 1 according to a fifth embodiment of the present invention. The apparatus 1 of the fifth embodiment has a configuration in which driving mechanisms 114 and 314 are added to the plasma processing apparatus 1 of the fourth embodiment. The driving mechanism 114 can include at least one of a mechanism for moving the first electrode 141 up and down and a mechanism for rotating the first electrode 141. The drive mechanism 314 may include a mechanism that moves the second electrode 145 up and down.

  FIG. 12 schematically shows a configuration of a plasma processing apparatus 1 according to a sixth embodiment of the present invention. The plasma processing apparatus according to the sixth embodiment can operate as a sputtering apparatus for forming a film on the substrate 112 by sputtering. Items not mentioned in the sixth embodiment can follow the first to fifth embodiments. The plasma processing apparatus 1 according to the sixth embodiment includes a plurality of first high-frequency supply units and at least one second high-frequency supply unit. One of the plurality of first high-frequency supply units may include a first electrode 106a, a second electrode 135a, and a first balun 103a. Another one of the plurality of first high-frequency supply units may include a first electrode 106b, a second electrode 135b, and a first balun 103b. Here, an example in which the plurality of first high-frequency supply units are configured by two high-frequency supply units will be described. Further, the two high-frequency supply units and components related thereto are distinguished from each other by subscripts a and b. Similarly, the two targets are distinguished from each other by subscripts a and b.

  In another aspect, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, a vacuum vessel 110, a first electrode 106a and a second electrode 135a, a first electrode 106b and a second An electrode 135b, a first electrode 141 and a second electrode 145 are provided. Alternatively, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, and a main body 10, and the main body 10 includes a vacuum vessel 110, a first electrode 106a and a second electrode 135a, It may be understood as including the first electrode 106b and the second electrode 135b, and the first electrode 141 and the second electrode 145. The main body 10 has first terminals 251a and 251b, second terminals 252a and 252b, third terminals 451, and fourth terminals 452.

  The first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and to the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a. , A balancing circuit is connected. The first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. An unbalanced circuit is connected to the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and to the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b. , A balancing circuit is connected.

  The second balun 303 can have the same configuration as the first baluns 103a and 103b. The second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the unbalanced circuit is connected to the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. , A balancing circuit is connected. The vacuum vessel 110 is grounded.

  The first electrodes 106a and 106b hold targets 109a and 109b, respectively. The targets 109a, 109b can be, for example, an insulator material or a conductor material. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first baluns 103a and 103b, respectively, and the second electrodes 135a and 135b are respectively connected to the second balanced terminals of the first baluns 103a and 103b. It is electrically connected to 212a and 212b.

  The first electrode 141 holds the substrate 112. The second electrode 145 is disposed around the first electrode 141. The first electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303.

  In the above configuration, the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, respectively, and the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, respectively. 251a and 251b are electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, respectively, and the second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively. It can be understood as a configuration that is physically connected. In the above configuration, the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is connected to the second balun 303. It can be understood that the fourth terminal 452 is electrically connected to the first balanced terminal 411 and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

  The first electrodes 106a and 106b and the first balanced terminals 211a and 211b (first terminals 251a and 251b) of the first baluns 103a and 103b can be electrically connected through the blocking capacitors 104a and 104b, respectively. The blocking capacitors 104a and 104b are connected between the first balanced terminals 211a and 211b of the first baluns 103a and 103b and the first electrodes 106a and 106b (or the first balanced terminals 211a and 211b of the first baluns 103a and 103b and DC current is cut off between the two balanced terminals 212a and 212b). Instead of providing the blocking capacitors 104a and 104b, the first impedance matching circuits 102a and 102b are connected to the first baluns 103a and 103b by the direct current flowing between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b. It may be configured to interrupt the current. Alternatively, the blocking capacitors 104a and 104b may be arranged between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrodes 106a and 106b and the second electrodes 135a and 135b can be supported by the vacuum vessel 110 via insulators 132a and 132b, respectively.

  The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 supplies a DC current between the first balanced terminal 411 of the second balun 303 and the first electrode 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block a DC current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Good. Alternatively, the blocking capacitor 304 may be disposed between the second electrode 145 and the second balanced terminal 412 (the fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 can be supported by the vacuum vessel 110 via the insulator 142.

  The plasma processing apparatus 1 includes a plurality of first high-frequency power supplies 101a and 101b, and a first impedance matching circuit 102a disposed between the plurality of first high-frequency power supplies 101a and 101b and the plurality of first baluns 103a and 103b. 102b. The first high-frequency power supplies 101a and 101b are connected between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively. Supply. In other words, the first high-frequency power supplies 101a and 101b are connected to the first electrodes 106a and 106b and the second electrodes 135a via the first impedance matching circuits 102a and 102b, the first baluns 103a and 103b, and the blocking capacitors 104a and 104b, respectively. 135b. Alternatively, the first high-frequency power supplies 101a and 101b are connected between the first terminals 251a and 251b and the second terminals 252a and 252b of the main body 10 via the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. Supply high frequency.

  The plasma processing apparatus 1 can include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

  FIG. 13 schematically shows a configuration of a plasma processing apparatus 1 according to a seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus for forming a film on the substrate 112 by sputtering. Items not mentioned as the plasma processing apparatus 1 of the seventh embodiment can follow the first to sixth embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum vessel 110, a first electrode 105a and a second electrode 105b forming a first set, and a first electrode 141 forming a second set. And a second electrode 145. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum vessel 110, a first electrode 105a and a second electrode 105b forming a first set. And the first electrode 141 and the second electrode 145 that constitute the second set. The main body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

  The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the unbalanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103. , A balancing circuit is connected. The second balun 303 can have the same configuration as the first balun 103. The second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411, and a second balanced terminal 412. An unbalanced circuit is connected to the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and the unbalanced circuit is connected to the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. , A balancing circuit is connected. The vacuum vessel 110 is grounded.

  The first set of first electrodes 105a holds the first target 109a and faces the space on the substrate 112 side via the first target 109a. The first set of second electrodes 105b is arranged next to the first electrodes 105a, holds the second target 109b, and faces the space on the substrate 112 side via the second target 109b. Targets 109a and 109b can be, for example, an insulator material or a conductor material. The first set of first electrodes 105a is electrically connected to the first balanced terminal 211 of the first balun 103, and the first set of second electrodes 105b is electrically connected to the second balanced terminal 212 of the first balun 103. It is connected to the.

  The second set of first electrodes 141 holds the substrate 112. The second set of second electrodes 145 is arranged around the first electrode 141. The second set of first electrodes 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second set of second electrodes 145 is electrically connected to the second balanced terminal 412 of the second balun 303. It is connected to the.

  In the above configuration, the first set of first electrodes 105a is electrically connected to the first terminals 251; the first set of second electrodes 105b is electrically connected to the second terminals 252; It can be understood as a configuration in which the first balun 103 is electrically connected to the first balanced terminal 211 and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103. Further, in the above configuration, the second set of first electrodes 141 is electrically connected to the third terminal 451, the second set of second electrodes 145 is electrically connected to the fourth terminal 452, and the third terminal 451 can be understood as being electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 being connected to the second balanced terminal 412 of the second balun 303.

  The first set of first electrodes 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 may be electrically connected via the blocking capacitor 104a. The blocking capacitor 104a is between the first balanced terminal 211 of the first balun 103 and the first set of first electrodes 105a (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). To cut off the DC current. The first pair of second electrodes 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected via the blocking capacitor 104b. The blocking capacitor 104b is provided between the second balanced terminal 212 of the first balun 103 and the first set of second electrodes 105b (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). To cut off the DC current. The first set of the first electrode 105a and the second electrode 105b can be supported by the vacuum vessel 110 via insulators 132a and 132b, respectively.

  The first electrode 141 of the second set and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is between the first balanced terminal 411 of the second balun 303 and the second set of first electrodes 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). To cut off the DC current. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block a DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. Good. The second set of the first electrode 141 and the second electrode 145 can be supported by the vacuum vessel 110 via insulators 142 and 146, respectively.

  The plasma processing apparatus 1 can include a first high-frequency power supply 101 and a first impedance matching circuit 102 disposed between the first high-frequency power supply 101 and the first balun 103. The first high frequency power supply 101 supplies a high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a and 104b. Alternatively, the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first set of the first electrode 105a and the second electrode 105b constitute a first high-frequency supply unit that supplies a high frequency to the internal space of the vacuum vessel 110.

  The plasma processing apparatus 1 can include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 of the second set via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the second set of the first electrode 141 and the second electrode 145 constitute a second high-frequency supply unit that supplies a high frequency to the internal space of the vacuum vessel 110.

  In a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the first high frequency power supply 101, a first set of first and second balanced terminals 211 and 212 of the first balun 103 are arranged from the first and second balanced terminals 211 and 212. The impedance when viewing the side of the first electrode 105a and the second electrode 105b (the side of the main body 10) is Rp1-jXp1. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is defined as X1. In this definition, satisfying 1.5 ≦ X1 / Rp1 ≦ 5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110.

  Further, in a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the second high frequency power supply 301, the second pair of the second balun 303 from the side of the first balanced terminal 411 and the second balanced terminal 412 is formed. Let Rp2-jXp2 be the impedance when looking at the first electrode 127 and second electrode 130 sides (the side of the main body 10). Further, the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is defined as X2. In this definition, satisfying 1.5 ≦ X2 / Rp2 ≦ 5000 is advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110.

  The plasma processing apparatus 1 of the seventh embodiment may further include at least one of a mechanism for moving up and down the first electrode 141 forming the second set and a mechanism for rotating the first electrode 141 forming the second set. In the example illustrated in FIG. 13, the plasma processing apparatus 1 includes a driving mechanism 114 including both a mechanism for moving the first electrode 141 up and down and a mechanism for rotating the first electrode 141. In the example illustrated in FIG. 13, the plasma processing apparatus 1 includes a mechanism 314 that raises and lowers the second electrode 145 included in the second set. Bellows constituting a vacuum partition may be provided between the vacuum vessel 110 and the driving mechanisms 114 and 314.

  The function of the first balun 103 in the plasma processing apparatus 1 according to the seventh embodiment shown in FIG. 13 will be described with reference to FIG. The current flowing through the first unbalanced terminal 201 is denoted by I1, the current flowing through the first balanced terminal 211 is denoted by I2, the current flowing through the second unbalanced terminal 202 is denoted by I2 ', and the current I2 flowing to the ground is denoted by I3. When I3 = 0, that is, when no current flows to the ground on the side of the balanced circuit, the isolation performance of the balanced circuit with respect to the ground is the best. When I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows with respect to the ground, the isolation performance of the balanced circuit with respect to the ground is the worst. The index ISO indicating the degree of the isolation performance can be given by the following equation, as in the first to fifth embodiments. Under this definition, the larger the absolute value of the ISO value, the better the isolation performance.

ISO [dB] = 20 log (I3 / I2 ′)
In FIG. 14, Rp−jXp (= Rp / 2−jXp / 2 + Rp / 2−jXp / 2) denotes a first balanced terminal 211 and a second balanced terminal in a state where plasma is generated in the internal space of the vacuum vessel 110. The impedance (including the reactance of the blocking capacitors 104a and 104b) when the side of the first electrode 105a and the side of the second electrode 105b (the side of the main body 10) is viewed from the side of 212. Rp indicates a resistance component, and -Xp indicates a reactance component. In FIG. 14, X represents a reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103. ISO has a correlation to X / Rp.

  FIG. 4 referred to in the description of the first embodiment illustrates the relationship among the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). The relationship shown in FIG. 4 holds in the seventh embodiment. The inventor of the present invention also satisfies 1.5 ≦ X / Rp ≦ 5000 in the internal space of the vacuum chamber 110 (the space between the first electrode 105a and the second electrode 105b) in the seventh embodiment. It has been found that it is advantageous to make the potential (plasma potential) of the plasma to be made insensitive to the state of the inner surface of the vacuum vessel 110. Here, the fact that the plasma potential becomes insensitive to the state of the inner surface of the vacuum vessel 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 corresponds to −10.0 dB ≧ ISO ≧ −80 dB.

  FIGS. 15A to 15D show simulation results of the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is satisfied. It is shown. FIG. 15A shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2 potential) when a resistive film (1 mΩ) is formed on the inner surface of the vacuum vessel 110. Is shown. FIG. 15B shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum vessel 110. Is shown. FIG. 15C shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2) when an inductive film (0.6 μH) is formed on the inner surface of the vacuum vessel 110. Potential). FIG. 15D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) when a capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110. Potential). It is understood from FIGS. 15A to 15D that satisfying 1.5 ≦ X / Rp ≦ 5000 is advantageous for stabilizing the plasma potential of the inner surface of the vacuum vessel 110 in various states.

  16A to 16D simulate the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. The results are shown. FIG. 16A shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1 mΩ) is formed on the inner surface of the vacuum vessel 110. Is shown. FIG. 16B shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum vessel 110. Is shown. FIG. 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) when an inductive film (0.6 μH) is formed on the inner surface of the vacuum vessel 110. Potential). FIG. 16D shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential), and a potential of the second electrode 105b (cathode 2) in a state where a capacitive film (0.1 nF) is formed on the inner surface of the vacuum vessel 110. Potential). 16A to 16D, when 1.5 ≦ X / Rp ≦ 5000 is not satisfied, it is understood that the plasma potential changes depending on the state of the inner surface of the vacuum vessel 110.

  Here, X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.16, X / Rp = 0.87) In both cases, the plasma potential is likely to change depending on the state of the inner surface of the vacuum vessel 110. When X / Rp> 5000, a discharge occurs only between the first electrode 105a and the second electrode 105b when no film is formed on the inner surface of the vacuum vessel 110. However, when X / Rp> 5000, when a film starts to be formed on the inner surface of the vacuum vessel 110, the plasma potential reacts sensitively to the film, with the result illustrated in FIGS. 16A to 16D. On the other hand, when X / Rp <1.5, since a large amount of current flows into the ground via the vacuum vessel 110, the influence of the state of the inner surface of the vacuum vessel 110 (electrical characteristics of a film formed on the inner surface) is obtained. And the plasma potential changes depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

  FIG. 17 schematically shows a configuration of a plasma processing apparatus 1 according to the eighth embodiment of the present invention. The plasma processing apparatus according to the eighth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Items not mentioned as the plasma processing apparatus 1 of the eighth embodiment can follow the first to seventh embodiments. The plasma processing apparatus 1 according to the eighth embodiment includes a balun (first balun) 103, a vacuum vessel 110, a first electrode 105a, and a second electrode 105b. Alternatively, it may be understood that the plasma processing apparatus 1 includes the balun 103 and the main body 10, and the main body 10 includes the vacuum vessel 110, the first electrode 105a, and the second electrode 105b. The main body 10 has a first terminal 251 and a second terminal 252.

  The first electrode 105a has a first holding surface HS1 holding a first target 109a as a first member, and the second electrode 105b has a second holding surface HS2 holding a second target 109b as a second member. May be provided. The first holding surface HS1 and the second holding surface HS2 can belong to one plane PL.

  The plasma processing apparatus 1 according to the eighth embodiment may further include a second balun 303, a third electrode 141, and a fourth electrode 145. In other words, the plasma processing apparatus 1 connects the first balun 103, the second balun 303, the vacuum vessel 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. Can be prepared. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum vessel 110, a first electrode 105a, a second electrode 105b, and a third electrode 141 and the fourth electrode 145. The main body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

  The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103, and the unbalanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103. , A balancing circuit is connected. The second balun 303 can have the same configuration as the first balun 103. The second balun 303 has a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411, and a fourth balanced terminal 412. An unbalanced circuit is connected to the third unbalanced terminal 401 and the fourth unbalanced terminal 402 of the second balun 303, and the unbalanced circuit is connected to the third balanced terminal 411 and the fourth balanced terminal 412 of the second balun 303. , A balancing circuit is connected. The vacuum vessel 110 is grounded. Each of the baluns 103 and 303 may have, for example, the configuration illustrated in FIGS. 2A and 2B (FIG. 14).

  The first electrode 105a holds the first target 109a, and faces the space on the side of the substrate 112 to be processed via the first target 109a. The second electrode 105b is arranged next to the first electrode 105a, holds the second target 109b, and faces the space on the substrate 112 side to be processed via the second target 109b. Targets 109a and 109b can be, for example, an insulator material or a conductor material. The first electrode 105a is electrically connected to the first balanced terminal 211 of the first balun 103, and the second electrode 105b is electrically connected to the second balanced terminal 212 of the first balun 103.

  The third electrode 141 holds the substrate 112. The fourth electrode 145 may be disposed around the third electrode 141. The third electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the fourth electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303.

  In the above configuration, the first electrode 105 a is electrically connected to the first terminal 251, the second electrode 105 b is electrically connected to the second terminal 252, and the first terminal 251 is connected to the first balanced balun 103. It can be understood as a configuration in which the second terminal 252 is electrically connected to the terminal 211 and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103. In the above configuration, the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is electrically connected to the second balun 303. It can be understood that the fourth terminal 452 is electrically connected to the first balanced terminal 411 and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303.

  The first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected by the first path PTH1. A reactance 511a can be arranged in the first path PTH1. In other words, the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the reactance 511a. The reactance 511a may include a capacitor between the first balanced terminal 211 of the first balun 103 and the first electrode 105a (or the first balanced terminal 211 of the first balun 103 and the second balanced terminal 211a). (Between terminal 212) can function as a blocking capacitor that blocks DC current. The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 can be electrically connected by the second path PTH2. A reactance 511b can be arranged in the second path PTH2. In other words, the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the reactance 511b. The reactance 511b may include a capacitor between the second balanced terminal 212 of the first balun 103 and the second electrode 105b (or the first balanced terminal 211 of the first balun 103 and the second balanced terminal 211b). (Between terminal 212) can function as a blocking capacitor that blocks DC current. The first electrode 105a and the second electrode 105b can be supported by the vacuum vessel 110 via insulators 132a and 132b, respectively.

  The plasma processing apparatus 1 may include a reactance 521a disposed between the first electrode 105a and the ground. The plasma processing apparatus 1 can include a reactance 521b disposed between the second electrode 105b and the ground. The plasma processing apparatus 1 may include a reactance 530 that connects the first path PTH1 and the second path PTH2.

  In one configuration example, the plasma processing apparatus 1 includes, as the adjusted reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, (a) A reactance 511a disposed on the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, (b) a reactance 521a disposed between the first electrode 105a and the ground, (c) a second balanced terminal Reactance 511b disposed in second path PTH2 connecting 212 and second electrode 105b, (d) reactance 521b disposed between second electrode 105b and ground, and (e) first path PTH1. And at least one of reactances 530 connecting the second path PTH2. The third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 can be electrically connected via the blocking capacitor 304. The blocking capacitor 304 applies a DC current between the first balanced terminal 411 of the second balun 303 and the third electrode 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to block a DC current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. Good. The third electrode 141 and the fourth electrode 145 can be supported by the vacuum vessel 110 via insulators 142 and 146, respectively.

  The plasma processing apparatus 1 can include a first high-frequency power supply 101 that generates a high frequency supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. The high-frequency power supply 101 can change the frequency of the high-frequency power supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. By changing the frequency, the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted. Alternatively, the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted by changing the frequency.

  Therefore, by adjusting the frequency, the relationship between the amount of the first target 109a sputtered and the amount of the second target 109b sputtered can be adjusted. Alternatively, by adjusting the frequency, the balance between the amount by which the first target 109a is sputtered and the amount by which the second target 109b is sputtered can be adjusted. Thus, the relationship between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Alternatively, the balance between the consumption of the first target 109a and the consumption of the second target 109b can be adjusted. Such a configuration is advantageous, for example, in that the replacement timing of the first target 109a and the replacement timing of the second target 109b are made the same, and the downtime of the plasma processing apparatus 1 is reduced. Further, by adjusting the frequency, the thickness distribution of the film formed on the substrate 112 can be adjusted.

  The plasma processing apparatus 1 may further include a first impedance matching circuit 102 disposed between the first high-frequency power supply 101 and the first balun 103. The first high frequency power supply 101 supplies a high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the first path PTH1. Alternatively, the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103, the first electrode 105a, and the second electrode 105b constitute a first high-frequency supply unit that supplies high frequency to the internal space of the vacuum vessel 110.

  The plasma processing apparatus 1 can include a second high-frequency power supply 301 and a second impedance matching circuit 302 disposed between the second high-frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high frequency power supply 301 supplies a high frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303, and the blocking capacitor 304. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the third electrode 141 and the fourth electrode 145 constitute a second high-frequency supply unit that supplies a high frequency to the internal space of the vacuum vessel 110.

  In a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of the high frequency from the first high frequency power supply 101, the first electrode 105a and the first electrode 105a from the side of the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103. The impedance when viewing the side of the second electrode 105b (the side of the main body 10) is defined as Rp1-jXp1. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is defined as X1. In this definition, satisfying 1.5 ≦ X1 / Rp1 ≦ 5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110. However, it should be noted that satisfying the condition of 1.5 ≦ X / Rp1 ≦ 5000 is not essential in the eighth embodiment and is an advantageous condition. In the eighth embodiment, by providing the balun 103, the potential of the plasma can be stabilized more than when the balun 103 is not provided. In addition, by providing the high frequency power supply 101 capable of changing the frequency of the generated high frequency, the relationship between the amount of the first target 109a sputtered and the amount of the second target 109b sputtered can be adjusted.

  In a state where plasma is generated in the internal space of the vacuum vessel 110 by the supply of high frequency from the second high frequency power supply 301, the third electrode of the second balun 303 from the side of the first balanced terminal 411 and the second balanced terminal 412. The impedance when viewing the side of 141 and the fourth electrode 145 (the side of the main body 10) is defined as Rp2-jXp2. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is defined as X2. In this definition, satisfying 1.5 ≦ X2 / Rp2 ≦ 5000 is particularly advantageous for stabilizing the potential of the plasma formed in the internal space of the vacuum vessel 110. However, it should be noted that satisfying the condition of 1.5 ≦ X / Rp2 ≦ 5000 is not essential in the eighth embodiment and is an advantageous condition.

  Hereinafter, ninth to twelfth embodiments that embody the plasma processing apparatus 1 of the eighth embodiment will be described with reference to FIGS. FIG. 18 schematically shows a configuration of a plasma processing apparatus 1 according to a ninth embodiment of the present invention. Items not mentioned in the ninth embodiment can follow the eighth embodiment. The plasma processing apparatus 1 according to the ninth embodiment includes at least one of a reactance 511a arranged on the first path PTH1 and a reactance 511b arranged on the second path PTH2. Here, the plasma processing apparatus 1 preferably includes both a reactance 511a disposed on the first path PTH1 and a reactance 511b disposed on the second path PTH2.

  The first reactance 511a may include an inductor 601a and a capacitor 602a. The inductor 601a may be arranged between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be arranged between the capacitor 602a and the first electrode 105a. Second reactance 511b may include inductor 601b and capacitor 602b. The inductor 601b may be arranged between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be arranged between the capacitor 602b and the second electrode 105b.

  FIG. 22 shows the normalized thickness distribution of the film formed on the substrate 112 when the high frequency generated by the high frequency power supply 101 is set to 12.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. It is shown. FIG. 22 shows the normalized thickness of the film formed on the substrate 112 when the frequency of the high frequency generated by the high frequency power supply 101 is set to 13.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. The distribution is shown. The horizontal axis is the position in the horizontal direction (the direction parallel to the surface of the substrate 112) in FIG. 18, and indicates the distance from the center of the substrate 112. When the frequency of the high frequency generated by the high frequency power supply 101 is 12.56 MHz, the thickness distribution of the film is significantly different between the left side and the right side of the center of the substrate 112. On the other hand, when the frequency of the high frequency generated by the high frequency power supply 101 is 13.56 MHz, the symmetry of the film thickness distribution is high between the left side and the right side of the center of the substrate 112. When the frequency of the high frequency generated by the high frequency power supply 101 is 13.56 MHz, the first voltage applied to the first electrode 105a and the frequency of the high frequency generated by the high frequency power supply 101 are 12.56 MHz. The balance with the second voltage applied to the second electrode 105b is good.

  FIG. 23 shows the voltage (first voltage) of the first electrode 105a and the voltage (second voltage) of the second electrode 105b when the frequency of the high frequency generated by the high frequency power supply 101 is changed in the plasma processing apparatus 1 of the ninth embodiment. 2nd voltage) is illustrated. The voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted by changing the frequency of the high frequency generated by the high frequency power supply 101. Alternatively, the relationship between the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted by changing the frequency of the high frequency generated by the high frequency power supply 101. For example, the frequency of the high frequency generated by the high-frequency power supply 101 can be adjusted so that the voltage (first voltage) of the first electrode 105a and the voltage (second voltage) of the second electrode 105b are equal. Thus, the amount of the first target 109a to be sputtered can be equal to the amount of the second target 109b to be sputtered. This is advantageous, for example, in that the replacement timing of the first target 109a and the replacement timing of the second target 109b are set to the same timing, and the downtime of the plasma processing apparatus 1 is reduced.

  FIG. 19 schematically shows a configuration of a plasma processing apparatus 1 according to the tenth embodiment of the present invention. Items not mentioned in the tenth embodiment can follow the eighth embodiment. The plasma processing apparatus 1 according to the tenth embodiment includes at least one of a reactance 521a disposed between the first electrode 105a and the ground, and a reactance 521b disposed between the second electrode 105b and the ground. ing. Reactance 521a may include, for example, inductor 607a and capacitor 606a. Reactance 521b may include, for example, inductor 607b and capacitor 606b.

  The plasma processing apparatus 1 further includes a reactance 511a (in this example, an inductor 603a and a capacitor 602a) disposed on the first path PTH1, and a reactance 511b (in this example, an inductor 603b and a capacitor) disposed on the second path PTH2. 602b).

  FIG. 20 schematically shows a configuration of a plasma processing apparatus 1 according to an eleventh embodiment of the present invention. Items not mentioned in the eleventh embodiment can conform to the eighth embodiment. The plasma processing apparatus 1 according to the thirteenth embodiment includes an inductor 608 as a reactance 530 that connects the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 further includes a reactance 511a (in this example, an inductor 603a and a capacitor 602a) disposed on the first path PTH1, and a reactance 511b (in this example, an inductor 603b and a capacitor) disposed on the second path PTH2. 602b).

  FIG. 21 schematically shows a configuration of a plasma processing apparatus 1 according to a twelfth embodiment of the present invention. Items not mentioned in the twelfth embodiment can conform to the eighth embodiment. The plasma processing apparatus 1 according to the twelfth embodiment includes a capacitor 609 as a variable reactance 530 that connects the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 further includes a reactance 511a (in this example, an inductor 603a and a capacitor 602a) disposed on the first path PTH1, and a reactance 511b (in this example, an inductor 603b and a capacitor) disposed on the second path PTH2. 602b).

  In the ninth to twelfth embodiments described with reference to FIGS. 18 to 23, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b. And a substrate tray having a rectangular shape in a so-called in-line type plasma device (for example, Japanese Patent No. JP-A-2011-144450) may be arranged.

  Hereinafter, the operation of adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. . FIG. 24 schematically shows a configuration of a plasma processing apparatus 1 according to a thirteenth embodiment of the present invention. The plasma processing apparatus 1 of the thirteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the ninth embodiment shown in FIG. The control unit 700 controls the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b such that the first voltage V1 is equal to the second voltage V2, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

  FIG. 25 schematically shows a configuration of a plasma processing apparatus 1 according to a fourteenth embodiment of the present invention. The plasma processing apparatus 1 according to the fourteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the tenth embodiment shown in FIG. The control unit 700 controls the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b such that the first voltage V1 is equal to the second voltage V2, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

  FIG. 26 schematically shows a configuration of a plasma processing apparatus 1 according to a fifteenth embodiment of the present invention. The plasma processing apparatus 1 according to the fifteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 according to the eleventh embodiment shown in FIG. The control unit 700 controls the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b such that the first voltage V1 is equal to the second voltage V2, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

  FIG. 27 schematically shows a configuration of a plasma processing apparatus 1 according to a sixteenth embodiment of the present invention. The plasma processing apparatus 1 of the sixteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the twelfth embodiment shown in FIG. The control unit 700 controls the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b such that the first voltage V1 is equal to the second voltage V2, for example. Adjust the frequency of the generated high frequency. For example, the control unit 700 generates a command value CNT for adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b.

  FIG. 28 schematically shows a configuration of a plasma processing apparatus 1 according to a seventeenth embodiment of the present invention. The plasma processing apparatus 1 according to the seventeenth embodiment can operate as an etching apparatus for etching the substrates 112a and 112b. The plasma processing apparatus 1 of the seventeenth embodiment is different in that the first electrode 105a and the second electrode 105b respectively hold the first substrate 112a and the second substrate 112b to be etched, and the third electrode 141 does not hold the substrate. Unlike the plasma processing apparatus 1 according to the eighth embodiment, the plasma processing apparatus 1 according to the eighth embodiment may have the same configuration as the plasma processing apparatus 1 according to the eighth embodiment in other respects.

  In one configuration example, the plasma processing apparatus 1 includes, as the adjusted reactance that affects the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b, (a) A reactance 511a disposed on the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, (b) a reactance 521a disposed between the first electrode 105a and the ground, (c) a second balanced terminal Reactance 511b disposed in second path PTH2 connecting 212 and second electrode 105b, (d) reactance 521b disposed between second electrode 105b and ground, and (e) first path PTH1. And at least one of reactances 530 connecting the second path PTH2.

  By adjusting the frequency of the high frequency generated by the high-frequency power supply 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be adjusted. Alternatively, by adjusting the frequency of the high frequency generated by the high-frequency power supply 101, the etching amount distribution of the first substrate 112a and the etching amount distribution of the second substrate 112b can be made the same.

  In the thirteenth to sixteenth embodiments described with reference to FIGS. 24 to 27, the electrodes are arranged on the opposing surfaces of the targets 109a and 109b, but the present invention is not limited to the electrodes, and the so-called carousel type And a substrate tray having a rectangular shape in a so-called in-line type plasma device (for example, Japanese Patent No. JP-A-2011-144450) may be arranged.

  In the thirteenth to sixteenth embodiments described with reference to FIGS. 24 to 27, the control unit 700 controls the high-frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the frequency of the high frequency at which the occurs. Instead of such a configuration, the control unit 700 adjusts the frequency of the high frequency generated by the high-frequency power supply 101 based on the plasma intensity near the first electrode 105a and the plasma intensity near the second electrode 105b. It may be configured. The plasma intensity near the first electrode 105a can be detected by, for example, a photoelectric conversion device. Similarly, the plasma intensity near the second electrode 105b can be detected by, for example, a photoelectric conversion device. For example, the control unit 700 may control the plasma intensity near the first electrode 105a and the plasma intensity near the second electrode 105b based on the plasma intensity near the first electrode 105a and the plasma intensity near the second electrode 105b. Is set to be equal to the high frequency generated by the high frequency power supply 101.

  Next, a plasma processing method according to a seventeenth embodiment of the present invention will be described. The plasma processing method according to the seventeenth embodiment processes the substrate 112 in the plasma processing apparatus 1 according to any one of the eighth to sixteenth embodiments. The plasma processing method adjusts the frequency of the high frequency generated by the high frequency power supply 101 such that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is adjusted. And a step of processing the substrate 112 after the step. The treatment may include a step of forming a film on the substrate 112 by sputtering or a step of etching the substrate 112.

  The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, to make the scope of the present invention public, the following claims are appended.

1: plasma processing apparatus, 10: main body, 101: high frequency power supply, 102: impedance matching circuit, 103: balun, 104: blocking capacitor, 106: first electrode, 107, 108: insulator, 109: target, 110: vacuum Vessel, 111: second electrode, 112: substrate, 201: first unbalanced terminal, 202: second unbalanced terminal, 211: first balanced terminal, 212: second balanced terminal, 251: first terminal, 252: Second terminal, 221: first coil, 222: second coil, 223: third coil, 224: fourth coil, 511a, 511b, 521a, 521b, 530: reactance, 700: control unit

Claims (16)

An impedance matching circuit;
A balun having a first unbalanced terminal connected to the impedance matching circuit, a second unbalanced terminal grounded, a first balanced terminal, and a second balanced terminal;
A grounded vacuum vessel,
A first electrode electrically connected to the first balanced terminal;
A second electrode electrically connected to the second balanced terminal;
An adjusting reactance that affects a relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode;
A high-frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit;
The high-frequency power supply is capable of changing the frequency of the high-frequency, the relationship is adjusted by changing the frequency,
The first electrode holds a first target, the second electrode holds a second target, the first electrode faces a space on a substrate side via the first target, and the second electrode holds a second target. The electrode faces the space via the second target,
The adjustment reactance includes a capacitor disposed on a path connecting the first electrode and ground, and a capacitor disposed on a path connecting the second electrode and ground.
A plasma processing apparatus, comprising: The first electrode has a first holding surface for holding a first member, the second electrode has a second holding surface for holding a second member, and the first holding surface and the second holding surface. Faces belong to one plane,
The plasma processing apparatus according to claim 1, wherein: The adjusting reactance is a reactance arranged on a first path connecting the first balanced terminal and the first electrode, and a reactance arranged on a second path connecting the second balanced terminal and the second electrode. And at least one of a reactance connecting the first path and the second path.
The plasma processing apparatus according to claim 1, wherein: The adjustment reactance includes a first reactance disposed on a first path connecting the first balanced terminal and the first electrode, and a second path connecting the second balanced terminal and the second electrode. Further comprising at least one of a second reactance disposed.
The plasma processing apparatus according to claim 1, wherein: The first reactance includes an inductor,
The second reactance includes an inductor,
The plasma processing apparatus according to claim 4, wherein: The first reactance includes a capacitor,
The second reactance includes a capacitor;
The plasma processing apparatus according to claim 4, wherein: The adjustment reactance further includes an inductor disposed in series on the path connecting the first electrode and ground, and an inductor disposed in series on the path connecting the second electrode and ground.
The plasma processing apparatus according to claim 1, wherein: The adjustment reactance includes a reactance connecting a first path connecting the first balanced terminal and the first electrode and a second path connecting the second balanced terminal and the second electrode.
The plasma processing apparatus according to claim 1, wherein: The reactance includes an inductor,
The plasma processing apparatus according to claim 8, wherein: The reactance includes a capacitor;
The plasma processing apparatus according to claim 8, wherein: A control unit that controls a frequency of the high frequency generated by the high frequency power supply based on the voltage of the first electrode and the voltage of the second electrode,
The plasma processing apparatus according to any one of claims 1 to 10, wherein: A resistance component between the first balanced terminal and the second balanced terminal when the first electrode and the second electrode are viewed from the first balanced terminal and the second balanced terminal is represented by Rp. , Satisfying 1.5 ≦ X / Rp ≦ 5000, where X is an inductance between the first unbalanced terminal and the first balanced terminal.
The plasma processing apparatus according to any one of claims 1 to 11 , wherein: The balun includes a first coil that connects the first unbalanced terminal and the first balanced terminal, and a second coil that connects the second unbalanced terminal and the second balanced terminal.
The plasma processing apparatus according to any one of claims 1 to 12, wherein the. The balun further includes a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal, wherein the third coil and the fourth coil are connected to the third coil. The voltage of the connection node with the fourth coil is configured to be the midpoint between the voltage of the first balanced terminal and the voltage of the second balanced terminal.
The plasma processing apparatus according to claim 13 , wherein: An impedance matching circuit, a first unbalanced terminal connected to the impedance matching circuit, a grounded second unbalanced terminal, a balun having a first balanced terminal and a second balanced terminal, a grounded vacuum vessel, A first electrode electrically connected to a first balanced terminal, a second electrode electrically connected to the second balanced terminal, a first voltage applied to the first electrode, and a second electrode connected to the second electrode. A high-frequency power supply that generates a high-frequency power supplied between the first unbalanced terminal and the second unbalanced terminal via the impedance matching circuit, and an adjusted reactance that affects the relationship with the applied second voltage; A plasma processing method for processing a substrate in a plasma processing apparatus comprising:
The first electrode holds a first target, the second electrode holds a second target, the first electrode faces a space on the side of the substrate via the first target, and The two electrodes face the space via the second target,
The adjustment reactance includes a capacitor disposed on a path connecting the first electrode and ground, and a capacitor disposed on a path connecting the second electrode and ground,
The plasma processing method,
Adjusting the frequency of the high frequency generated by the high frequency power supply so that the relationship is adjusted,
Processing the substrate after the step;
A plasma processing method comprising: A resistance component between the first balanced terminal and the second balanced terminal when the first electrode and the second electrode are viewed from the first balanced terminal and the second balanced terminal is represented by Rp. , Satisfying 1.5 ≦ X / Rp ≦ 5000, where X is an inductance between the first unbalanced terminal and the first balanced terminal.
The plasma processing apparatus according to any one of claims 1 to 14 , wherein:

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