TW201903991A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW201903991A
TW201903991A TW107104282A TW107104282A TW201903991A TW 201903991 A TW201903991 A TW 201903991A TW 107104282 A TW107104282 A TW 107104282A TW 107104282 A TW107104282 A TW 107104282A TW 201903991 A TW201903991 A TW 201903991A
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Taiwan
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insulating film
opening
columnar electrode
layer
semiconductor wafer
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TW107104282A
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Chinese (zh)
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TWI782950B (en
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坂田賢治
秋葉俊彦
船矢琢央
土屋秀昭
吉田裕一
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日商瑞薩電子股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9212—Sequential connecting processes
    • H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

There is a need to improve reliability of the semiconductor device. A semiconductor device includes a printed circuit board and a semiconductor chip mounted over the printed circuit board. The semiconductor chip includes a pad, an insulation film including an opening to expose part of the pad, and a pillar electrode formed over the pad exposed from the opening. The printed circuit board includes a terminal and a resist layer including an opening to expose part of the terminal. The pillar electrode of the semiconductor chip and the terminal of the printed circuit board are coupled via a solder layer. Thickness h1 of the pillar electrode is measured from the upper surface of the insulation film. Thickness h2 of the solder layer is measured from the upper surface of the resist layer. Thickness h1 is greater than or equal to a half of thickness h2 and is smaller than or equal to thickness h2.

Description

半導體裝置Semiconductor device

本發明係關於一種半導體裝置、例如較佳地利用於將半導體晶片覆晶連接於配線基板上之半導體裝置者。The present invention relates to a semiconductor device, for example, a semiconductor device which is preferably used for connecting a flip chip of a semiconductor wafer to a wiring substrate.

可於配線基板上覆晶連接半導體晶片，製造半導體裝置。 於日本專利特開2013-211511號公報(專利文獻1)中，記載有關於如下半導體裝置之技術：該半導體裝置係介隔焊料，將形成於半導體晶片之電極墊上之Cu柱與配線基板之連接端子連接 於非專利文獻1中，記載有關於焊料接合部之電遷移之技術。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2013-211511號公報 [非專利文獻] [非專利文獻1]P. Liu, A. Overson, and D. Goyal, “Key Parameters for Fast Ni Dissolution during Electromigration of Sn0.7Cu Solder Joint” 2015 Electronic Components & Technology Conference, pp.99-105, 2015.A semiconductor wafer can be flip-chip connected to a wiring substrate to manufacture a semiconductor device. Japanese Patent Laid-Open No. 2013-211511 (Patent Document 1) describes a technology for a semiconductor device that connects a Cu pillar formed on an electrode pad of a semiconductor wafer and a wiring substrate through solder The connection of the terminal to Non-Patent Document 1 describes a technique related to electromigration of solder joints. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2013-211511 [Non-Patent Literature] [Non-Patent Literature 1] P. Liu, A. Overson, and D. Goyal, “Key Parameters for Fast Ni Dissolution during Electromigration of Sn0.7Cu Solder Joint ”2015 Electronic Components & Technology Conference, pp.99-105, 2015.

[發明所欲解決之問題] 期待於將半導體晶片覆晶連接於配線基板上之半導體裝置中，提昇可靠性。 其他問題與新穎之特徵將根據本說明書之記述及隨附圖式闡明。 [解決問題之技術手段] 根據一實施形態，半導體裝置包含配線基板、及搭載於上述配線基板上之半導體晶片。上述半導體晶片包含：第1絕緣膜；焊墊，其係形成於上述第1絕緣膜上；第2絕緣膜，其具有使上述焊墊之一部分露出之第1開口部；及柱狀電極，其係形成於自上述第1開口部露出之上述焊墊上。上述配線基板包含：端子；及第3絕緣膜，其具有使上述端子之一部分露出之第2開口部。上述半導體晶片之上述柱狀電極與上述配線基板之上述端子係介隔焊料層而連接。上述柱狀電極自上述第2絕緣膜之第1主面起之第1厚度係上述焊料層自上述第3絕緣膜之第2主面起之第2厚度之一半以上且上述第2厚度以下。 [發明效果] 根據一實施形態，可提昇半導體裝置之可靠性。[Problems to be Solved by the Invention] It is expected to improve reliability by connecting a semiconductor wafer flip-chip to a semiconductor device on a wiring substrate. Other problems and novel features will be clarified based on the description in this manual and accompanying drawings. [Technical Means for Solving the Problems] According to an embodiment, a semiconductor device includes a wiring board and a semiconductor wafer mounted on the wiring board. The semiconductor wafer includes: a first insulating film; a pad formed on the first insulating film; a second insulating film having a first opening that exposes a portion of the pad; and a columnar electrode, which It is formed on the pad exposed from the first opening. The wiring board includes: a terminal; and a third insulating film having a second opening that exposes a part of the terminal. The columnar electrode of the semiconductor wafer and the terminal of the wiring board are connected via a solder layer. The first thickness of the columnar electrode from the first main surface of the second insulating film is more than half of the second thickness of the solder layer from the second main surface of the third insulating film and less than the second thickness. [Effect of the Invention] According to one embodiment, the reliability of the semiconductor device can be improved.

於以下之實施形態中，出於方便上之需要，有時分割為複數個章節或實施形態進行說明，但除特別明示之情形以外，其等並非互不相關，一者存在於另一者之一部分或全部之變化例、詳細、補充說明等關係中。又，於以下之實施形態中，當提及要素之數量等(包含個數、數值、量、範圍等)時，除特別明示之情形及原理上明顯限定為特定數量之情形等以外，並不限定於該特定數量，亦可為特定數量以上或以下。進而，於以下之實施形態中，毋庸置疑，其構成要素(亦包含要素步驟等)，除特別明示之情形及認為原理上明顯必需之情形等以外，並非為必需者。同樣地，於以下之實施形態中，當提及構成要素等之形狀、位置關係等時，除特別明示之情形及認為原理上明顯並非如此之情形等以外，包含實質上與該形狀等近似或類似者。此情況對於上述數值及範圍亦相同。 以下，基於圖式對實施形態詳細地進行說明。再者，於用以對實施形態進行說明之所有圖中，對具有同一功能之構件標註同一符號，且省略其重複說明。又，於以下之實施形態中，除特殊需要時以外，原則上不重複同一或同樣之部分之說明。 又，於實施形態所使用之圖式中，即便剖視圖，亦存在為了便於觀察圖式而省略影線之情形。又，即便俯視圖，亦存在為便於觀察圖式而標註影線之情形。 (實施形態) ＜關於半導體晶片之整體構造＞ 圖1係本實施形態之半導體晶片CP之整體俯視圖，表示有半導體晶片CP中之柱狀電極PL之佈局例。圖2係半導體晶片CP之概念剖視圖，圖1之A1-A1線上之半導體晶片CP之剖視圖與圖2大致對應。 本實施形態之半導體晶片CP具有作為一主面之上表面、及作為與上表面為相反側之主面之背面(下表面)，於圖1中，表示有半導體晶片CP之上表面。再者，於半導體晶片CP中，將形成有焊墊PD或焊墊PD上之柱狀電極PL之側之主面稱為半導體晶片CP之上表面，將與上表面為相反側之主面稱為半導體晶片CP之背面。 如圖1及圖2所示，半導體晶片CP於上表面側包含複數個焊墊(焊墊電極、電極墊、接合墊)PD、及分別形成於複數個焊墊PD上之複數個柱狀電極(Cu柱、柱狀電極)PL。各柱狀電極PL自半導體晶片CP之上表面突出。因此，亦可將柱狀電極PL視為突起電極。 複數個柱狀電極PL係分別形成於半導體晶片CP之複數個焊墊PD上，因此於俯視下，半導體晶片CP中之焊墊PD之排列與柱狀電極PL之排列相同。即，焊墊PD與形成於其上之柱狀電極PL成對。焊墊PD及形成於其上之柱狀電極PL作為半導體晶片CP之外部連接用端子發揮功能。於各柱狀電極PL之前端面(上表面)上，形成有下述焊料層SD1，但於圖2中省略焊料層SD1之圖示。再者，於柱狀電極PL中，與連接於焊墊PD之側為相反側之面(主面)為柱狀電極PL之前端面(上表面)。 作為另一形態，亦存在半導體晶片CP之複數個焊墊PD不僅包含於其上形成有柱狀電極PL之焊墊(PD)，亦包含於其上未形成柱狀電極PL之焊墊(PD)的情形。於該情形時，於其上未形成柱狀電極PL之焊墊(PD)整體被下述絕緣膜PA覆蓋。即，亦可根據電性特性(接地特性等)，對於半導體晶片CP所包含之複數個焊墊PD中之一部分之焊墊，以下述絕緣膜PA將其整體覆蓋，藉此，設為不與下述配線基板CB之端子TE電性連接之焊墊。 半導體晶片CP之平面形狀為四邊形狀，更特定而言為矩形狀，但亦可使矩形之角帶有弧度。於圖1之情形時，於半導體晶片CP之上表面(上表面之大致整體)，複數個柱狀電極PL排列為陣列狀(矩陣狀)。即，於圖1之情形時，複數個柱狀電極PL於半導體晶片CP之上表面以面陣列配置設置。 又，於柱狀電極PL之排列(陣列狀之排列)中，亦可藉由每行錯開1/2間距排列將複數個柱狀電極PL以所謂錯位排列進行排列，將該情形(錯位排列之情形)表示於圖3中。圖3亦與圖1同樣為半導體晶片CP之整體俯視圖，表示半導體晶片CP中之柱狀電極PL之另一佈局例。 ＜半導體裝置之構造＞ 圖4及圖5係表示本實施形態之半導體裝置PKG之俯視圖，圖4表示半導體裝置PKG之頂視圖，圖5表示半導體裝置PKG之底視圖。圖6係表示本實施形態之半導體裝置PKG之剖視圖，圖4及圖5之A2-A2線上之半導體裝置PKG之剖視圖與圖6大致對應。圖7係本實施形態之半導體裝置PKG之主要部分剖視圖，表示圖6中之以虛線包圍之區域RG1之放大圖。即，圖7對應於半導體晶片CP之柱狀電極PL與配線基板CB之端子TE之接合部附近之區域之放大圖。圖8係半導體裝置PKG中使用之配線基板CB之頂視圖，圖9係配線基板CB之底視圖，圖10係配線基板CB之剖視圖，圖11係配線基板CB之主要部分剖視圖。圖8及圖9之A3-A3線上之配線基板CB之剖視圖與圖10大致對應。於圖8中，以虛線表示之區域CY係對應於搭載半導體晶片CP之區域(晶片搭載區域)。又，圖11係對應於圖10中之以虛線包圍之區域RG2之放大圖。再者，圖6與圖10為相同截面，圖7與圖11為相同截面。 圖4～圖7所示之本實施形態之半導體裝置PKG係包含半導體晶片CP之半導體封裝形態之半導體裝置。 如圖4～圖7所示，本實施形態之半導體裝置(半導體封裝)PKG包含配線基板CB、搭載(配置)於配線基板CB之上表面CBa上之半導體晶片CP、將半導體晶片CP與配線基板CB之間填滿之樹脂部(底部填充樹脂)UFR、設置於配線基板CB之下表面CBb之複數個焊料球(外部端子、凸塊電極、焊料凸塊)BL。 於半導體裝置PKG中，半導體晶片CP係覆晶安裝於配線基板CB之上表面CBa。即，半導體晶片CP係以半導體晶片CP之背面側向上方，半導體晶片CP之上表面與配線基板CB之上表面CBa對向之朝向，介隔複數個柱狀電極PL，搭載(安裝)於配線基板CB之上表面CBa上。因此，半導體晶片CP係倒裝接合於配線基板CB之上表面CBa。 半導體晶片CP之上表面之複數個柱狀電極PL係分別介隔焊料層(焊材、焊料部)SD，接合於配線基板CB之上表面CBa之複數個端子(焊盤、導電性焊盤、接合引線、接合指、基板側端子、電極)TE。即，於柱狀電極PL與端子TE之間，介置有包含焊料(焊材)之焊料層SD，且利用該焊料層SD將柱狀電極PL與端子TE接合而電性連接。因此，半導體晶片CP之上表面之複數個柱狀電極PL係分別介隔焊料層SD而電性且機械連接於配線基板CB之上表面CBa之複數個端子TE。因此，半導體晶片CP之複數個焊墊PD係介隔柱狀電極PL及焊料層SD而分別電性連接於配線基板CB之上表面CBa之複數個端子TE。藉此，形成於半導體晶片CP之半導體積體電路係介隔焊墊PD及柱狀電極PL而電性連接於配線基板CB之上表面CBa之端子TE。 再者，於本申請案中，當提及焊料或焊材時，並不限定於包含錫與鉛之合金，亦包含無鉛焊料(lead-free solder alloy)。覆晶連接所使用之無鉛焊料(lead-free solder alloy)較佳使用相對於錫包含銀、鋅、銅、鎳、鉍、銻之任一種以上之元素之合金。 於半導體裝置PKG中，於半導體晶片CP與配線基板CB之上表面CBa之間，填充有作為底部填充樹脂之樹脂部UFR。藉由樹脂部UFR而可將半導體晶片CP之柱狀電極PL與配線基板CB之端子TE之連接部密封保護。又，可藉由樹脂部UFR而緩衝因半導體晶片CP與配線基板CB之熱膨脹率之差導致之負擔施加於柱狀電極PL與端子TE之連接部。藉此，可提昇半導體裝置PKG之可靠性。樹脂部UFR例如包含環氧樹脂或聚矽氧樹脂等樹脂材料(例如熱固性樹脂材料)，亦可含有填充劑(二氧化矽等)。 配線基板(封裝基板)CB係與其厚度交叉之平面形狀為矩形(四邊形)，且具有作為一主面之上表面CBa、及作為與上表面CBa為相反側之主面之下表面CBb。於配線基板CB之上表面CBa中之晶片搭載區域(搭載半導體晶片CP之區域)，以與半導體晶片CP之上表面之柱狀電極PL之排列相對應之排列，排列有複數個端子TE。即，當於配線基板CB之上表面CBa之晶片搭載區域(CY)搭載半導體晶片CP時，以使半導體晶片CP之複數個柱狀電極PL與配線基板CB之複數個端子TE分別對向之方式，於配線基板CB之上表面CBa之晶片搭載區域排列複數個端子TE。 因此，配線基板CB之上表面CBa之晶片搭載區域(CY)中之端子TE之排列方式與半導體晶片CP之上表面之柱狀電極PL之排列相同。因此，當如上述圖1所示，於半導體晶片CP之上表面複數個柱狀電極PL排列為陣列狀時，如圖8，於配線基板CB之上表面CBa之晶片搭載區域(CY)，複數個端子TE排列為陣列狀。又，當如上述圖3所示，於半導體晶片CP之上表面複數個柱狀電極PL係以錯位排列進行排列時，如圖12，於配線基板CB之上表面CBa之晶片搭載區域(CY)，複數個端子TE亦以錯位排列進行排列。圖12亦與圖8同樣為配線基板之頂視圖，表示有搭載上述圖3之半導體晶片之情形時之配線基板CB中之端子TE之佈局例。 再者，配線基板CB之上表面CBa之晶片搭載區域係對應於在將半導體晶片CP搭載於配線基板CB之上表面CBa上之後之階段中，配線基板CB之上表面CBa中搭載有半導體晶片CP之區域、即配線基板CB之上表面CBa中俯視下與半導體晶片CP重疊之區域。又，配線基板CB之上表面CBa之晶片搭載區域係對應於在將半導體晶片CP搭載於配線基板CB之上表面CBa上之前之階段中，配線基板CB之上表面CBa中隨後預定搭載半導體晶片CP之區域(晶片預搭載區域)。因此，配線基板CB之上表面CBa之晶片搭載區域於半導體晶片CP之搭載前與搭載後表示相同之區域。即，配線基板CB之上表面CBa中當搭載半導體晶片CP時與半導體晶片CP於俯視下重疊之區域無論於半導體晶片CP之搭載前或搭載後均為晶片搭載區域。此處，俯視係指以與配線基板CB之上表面CBa平行之平面觀察之情形。 又，於下述圖14中，表示有半導體裝置PKG之製造所使用之配線基板CB。於下述圖14之配線基板CB中，於配線基板CB之上表面CBa之端子TE上形成有焊料層SD2，但於圖4～圖7所示之製造後之半導體裝置PKG中，該配線基板CB之端子TE上之焊料層SD2與形成於安裝前之半導體晶片CP之柱狀電極PL上之焊料層SD1藉由熔融、再固化而一體化，成為焊料層SD。於半導體裝置PKG中，半導體晶片CP之柱狀電極PL係介隔焊料層SD接合並固定於配線基板CB之端子TE。 又，於半導體裝置PKG中，於配線基板CB之下表面CBb，形成有複數個用以連接焊料球BL之導電性之焊盤(電極、焊墊、端子)LA。 配線基板CB例如係將複數層絕緣體層(介電層)與複數層導體層(配線層、導體圖案層)積層一體化而成之多層配線基板(多層基板)。配線基板CB之上表面CBa之端子TE經由配線基板CB之配線及形成於配線基板CB之通孔之內部之通孔配線等而電性連接於配線基板CB之下表面CBb之焊盤LA。 再者，於圖6、圖7及圖10中，為了簡化圖式，除配線基板CB之上表面CBa之端子TE與配線基板CB之下表面CBb之焊盤LA、配線基板CB之上表面CBa側之抗蝕層SR1、及配線基板CB之下表面CBb側之抗蝕層SR2以外，不將構成配線基板CB之複數層絕緣體層及配線層分為單獨之層而一體化地表示為基材層(基底層)BS。因此，於圖6、圖7及圖10中，於構成配線基板CB之基材層BS之上表面上形成有端子TE，於基材層BS之下表面上形成有焊盤LA，但該基材層BS實際上具有包含複數層絕緣體層及介置於該複數層絕緣體層彼此間之配線層的積層構造。即，配線基板CB包含複數層導體層(配線層、導體圖案層)，但於該複數層導體層中之最上層之導體層形成有複數個端子TE，且於該複數層導體層中之最下層之導體層形成有複數個焊盤LA。 於配線基板CB之最上層，形成有作為絕緣膜(絕緣層)之抗蝕層(焊料抗蝕層、阻焊層)SR1，端子TE自抗蝕層SR1之開口部OP1露出。即，抗蝕層SR1係配線基板CB之最上層之膜(絕緣膜)。又，於配線基板CB之最下層，形成有作為絕緣膜(絕緣層)之抗蝕層(焊料抗蝕層、阻焊層)SR2，焊盤LA自抗蝕層SR2之開口部OP2露出。抗蝕層SR1、SR2均為作為阻焊層發揮功能之絕緣膜。 即，於構成配線基板CB之基材層BS之上表面上，形成有包含複數個端子TE之導體層，且以覆蓋該導體層之方式，於基材層BS之上表面上形成有抗蝕層SR1，該抗蝕層SR1構成配線基板CB之最上層，但各端子TE自抗蝕層SR1之開口部OP1露出。再者，於俯視下，開口部OP1係內含於端子TE，開口部OP1之平面尺寸(平面面積)小於端子TE之平面尺寸(平面面積)。因此，各端子TE之外周部係以抗蝕層SR1覆蓋，各端子TE之中央附近未被抗蝕層SR1覆蓋而自抗蝕層SR1之開口部OP1露出。 配線基板CB之上表面CBa係主要由配線基板CB之抗蝕層SR1之上表面SR1a構成。再者，抗蝕層SR1之上表面SR1a係與基材層BS為相反側之面(主面)。因此，抗蝕層SR1之上表面SR1a係以於配線基板CB上搭載有半導體晶片CP之狀態下與半導體晶片CP對向之側之主面。 端子TE包含銅(Cu)層TE1及銅層TE1上之鎳(Ni)層TE2之積層膜。鎳層TE2係藉由鍍覆法而形成之鍍層(鍍鎳層)，且形成於自抗蝕層SR1之開口部OP1露出之部分之銅層TE1上。其原因在於：當製造配線基板CB時，於形成具有開口部OP1之抗蝕層SR1後，於自開口部OP1露出之部分之銅層TE1上形成成為鎳層TE2之鍍鎳層。因此，於各端子TE中，鎳層TE2並非形成於銅層TE1之上表面整體，而形成於自開口部OP1露出之部分之銅層TE1上，於被抗蝕層SR1覆蓋之部分之銅層TE1上未形成鎳層TE2。因此，各端子TE之未被抗蝕層SR1覆蓋而自開口部OP1露出之部分具有銅層TE1及其上之鎳層TE2之積層構造，且以抗蝕層SR1覆蓋之部分包含銅層TE1。 又，於構成配線基板CB之基材層BS之下表面上，形成有包含複數個焊盤LA之導體層，以覆蓋該導體層之方式，於基材層BS之下表面上形成有抗蝕層SR2，該抗蝕層SR2構成配線基板CB之最下層，但各焊盤LA自抗蝕層SR2之開口部OP2露出。再者，於俯視下，開口部OP2係內含於焊盤LA，開口部OP2之平面尺寸(平面面積)小於焊盤LA之平面尺寸(平面面積)。因此，各焊盤LA之外周部係以抗蝕層SR2覆蓋，各焊盤LA之中央附近未被抗蝕層SR2覆蓋而自抗蝕層SR2之開口部OP2露出。 於配線基板CB中，抗蝕層SR1之開口部OP1係以與端子TE之排列相同排列設置於晶片搭載區域，因此，以與半導體晶片CP之端子TE之排列相同排列設置於晶片搭載區域。因此，於配線基板CB之晶片搭載區域，形成有複數層抗蝕層SR1之開口部OP1，自1個開口部OP1露出1個端子TE。 於配線基板CB之下表面CBb，焊盤LA排列為陣列狀(面陣列狀)。於各焊盤LA，連接(形成)有焊料球BL作為突起電極。因此，於半導體裝置PKG中，成為於配線基板CB之下表面CBb呈陣列狀地配置有複數個焊料球BL之狀態，該等複數個焊料球BL可作為半導體裝置PKG之外部端子(外部連接用端子)而發揮功能。 半導體晶片CP之各柱狀電極PL係介隔焊料層SD而電性連接於CB之上表面CBa之各端子TE，進而，經由配線基板CB之配線或通孔配線而電性連接於配線基板CB之下表面CBb之焊盤LA及連接在焊盤LA的焊料球BL。又，配置於配線基板CB之下表面CBb之複數個焊料球BL亦可包含未電性連接於半導體晶片CP之柱狀電極PL之焊料球，亦可將其用於散熱用途。 ＜關於半導體裝置之製造步驟＞ 其次，對本實施形態之半導體裝置PKG之製造步驟進行說明。圖13係表示本實施形態之半導體裝置PKG之製造步驟之製程流程圖。圖14～圖19係表示本實施形態之半導體裝置之製造步驟之剖視圖。於圖14～圖16、圖18及圖19中，表示與上述圖3相對應之截面。又，圖17係將圖16之一部分放大表示之局部放大剖視圖，表示以中之虛線包圍之區域RG3之放大圖。 當製造半導體裝置PKG時，首先，準備(預備)半導體晶片CP與配線基板CB(圖13之步驟S1、S2)。 半導體晶片CP表示於上述圖1～圖3，如上所述，半導體晶片CP包含複數個焊墊PD、及分別形成於複數個焊墊PD上之複數個柱狀電極PL。 又，配線基板CB表示於上述圖8～圖11，如上所述，配線基板CB包含形成於上表面CBa之晶片搭載區域之複數個端子TE、及形成於下表面CBb之複數個焊盤LA。 配線基板CB可藉由各種製法而製作。例如可使用增層法、減成法、印刷法、片材積層法、半加成法、或加成法等而製作配線基板CB。 可先於步驟S1中準備半導體晶片CP後，於步驟S2中準備配線基板CB，或先於步驟S2中準備配線基板CB後，於步驟S1中準備半導體晶片CP，或同時進行步驟S1與步驟S2，同時準備配線基板CB與半導體晶片CP。 於半導體裝置PKG之製造中使用之配線基板CB，如圖14所示，於配線基板CB之上表面CBa之端子TE上形成有包含焊料(焊材)之焊料層(焊材、焊料部)SD2。即，於步驟S2中準備(製造)於端子TE上形成有焊料層SD2之配線基板CB。 作為另一形態，亦可於步驟S2中，準備於端子TE上未形成焊料層SD2之配線基板CB後，於進行下述步驟S3之覆晶安裝步驟前，於配線基板CB之端子TE上形成焊料層SD2。 焊料層SD2係形成於自抗蝕層SR1之開口部OP1露出之部分之端子TE，因此，形成於構成端子TE之鎳層TE2上。焊料層SD2例如可使用鍍覆法形成。 又，於半導體裝置PKG之製造中使用之半導體晶片CP中，亦如下述圖15、圖20、圖22、圖35及圖36所示，於半導體晶片CP之複數個柱狀電極PL各自之前端面上形成有焊料層SD1。即，於步驟S1中準備(製造)於柱狀電極PL上形成有焊料層SD1之半導體晶片CP。 其次，進行覆晶連接步驟(圖13之步驟S3)。具體而言，步驟S3可如下所述地進行。 即，如圖15所示，以半導體晶片CP之上表面與配線基板CB之上表面CBa對向之朝向，於配線基板CB之上表面CBa之晶片預搭載區域之上方，配置以工具(未圖示)保持之半導體晶片CP。繼之，使以工具保持之半導體晶片CP接近配線基板CB之上表面CBa，使半導體晶片CP之柱狀電極PL之前端面之焊料層SD1接觸配線基板CB之端子TE上之焊料層SD2。此時，以半導體晶片CP之複數個柱狀電極PL與配線基板CB之複數個端子TE分別對向之方式，使半導體晶片CP相對於配線基板CB對位。又，此時，亦可將焊料層SD1或焊料層SD2之至少一者預先加熱至接觸後變形之程度之硬度。 其次，將焊料層SD1及焊料層SD2加熱至熔點以上。於以使焊材層D1與焊料層SD2接觸之狀態進行加熱之情形時，若加熱半導體晶片CP，則藉由來自焊料層SD1之熱傳遞而亦可將焊料層SD2加熱。當焊料層SD1及焊料層SD2分別熔融時，構成焊料層SD1之焊材與構成焊料層SD2之焊材熔融而一體化。其後，藉由使熔融焊料冷卻固化，而形成將柱狀電極PL與端子TE連接之焊料層SD。焊料SD包含熔融而再固化之焊料層SD1、SD2。焊料層SD介置於半導體晶片CP之柱狀電極PL與配線基板CB之端子TE之間，將半導體晶片CP之柱狀電極PL與配線基板CB之端子TE電性且機械性連接。於圖16中表示該階段。 又，當焊料層SD1與焊料層SD2熔融而一體化時，一體化之熔融焊料藉由表面張力而以成為物理上穩定之形狀之方式變形，即成為類似球形之形狀。因此，該熔融焊料固化而形成之焊料層SD於配線基板CB之抗蝕層SR1與柱狀電極PL之前端面之間之高度位置成為類似球形之形狀(參照圖17)。 以此方式，進行覆晶連接步驟，將半導體晶片CP搭載於配線基板CB之上表面CBa上，並且將半導體晶片CP之複數個柱狀電極PL分別介隔焊料層SD接合於配線基板CB之複數個端子TE。藉此，將半導體晶片CP固定於配線基板CB。 又，覆晶連接時，為去除連接部之金屬氧化膜，而可較佳地使用助焊劑。例如，於在配線基板CB上搭載半導體晶片CP前，預先對配線基板CB之上表面CBa上(尤其是端子TE上)供給助焊劑。其後，於配線基板CB上配置半導體晶片CP後，進行回流焊步驟(使焊料層SD1、SD2熔融，形成焊料層SD之加熱步驟)後，進行洗淨處理即可。 其次，如圖18所示，形成作為將半導體晶片CP與配線基板CB之間填滿之底部填充樹脂之樹脂部UFR(圖13之步驟S4)。步驟S4例如可如下所述地進行。 即，對半導體晶片CP與配線基板CB之上表面CBa之間供給(填充、注入)液狀或膏狀之樹脂材料。該樹脂材料亦可含有熱固性樹脂材料，進而含有填充劑(二氧化矽粒子等)。供給至半導體晶片CP與配線基板CB之上表面CBa之間之樹脂材料藉由毛細管現象而向半導體晶片CP與配線基板CB之上表面CBa之間之空間擴散。繼之，藉由以加熱等使該樹脂材料硬化，而可形成包含經硬化之樹脂材料之樹脂部UFR。 作為另一形態，亦可於在配線基板CB上配置半導體晶片CP前(即進行上述步驟S3前)，於配線基板CB之上表面CBa之晶片預搭載區域預先塗佈液狀或膏狀之上述樹脂材料，其後，以覆晶連接將半導體晶片CP之柱狀電極PL連接於配線基板CB之端子TE後，使該樹脂材料硬化而形成樹脂部UFR。於該情形時，於步驟S4中，無須進行對半導體晶片CP與配線基板CB之上表面CBa之間供給樹脂材料之步驟，成為進行藉由加熱而使已經存在於半導體晶片CP與配線基板CB之上表面CBa之間之樹脂材料硬化的步驟。 其次，如圖19所示，於配線基板CB之下表面CBb之焊盤LA連接(接合、形成)焊料球BL(圖13之步驟S5)。 於步驟S5之焊料球BL連接步驟中，例如可使配線基板CB之下表面CBb朝向上方，於配線基板CB之下表面CBb之複數個焊盤LA上分別配置(搭載)焊料球BL並以助焊劑等暫時固定，進行回焊處理(回流焊處理、熱處理)使焊料熔融，從而將焊料球BL與配線基板CB之下表面CBb之焊盤LA接合。其後，亦可視需要進行洗淨步驟，去除附著於焊料球BL之表面之助焊劑等。以此方式，接合(形成)作為半導體裝置PKG之外部端子(外部連接用端子)之焊料球BL。 再者，於本實施形態中，對接合焊料球BL作為半導體裝置PKG之外部端子之情形進行說明，但並不限定於此，例如亦可代替焊料球BL而藉由印刷法等對焊盤LA上供給焊料，形成半導體裝置PKG之包含焊料之外部端子(凸塊電極、焊料凸塊)。於該情形時，可對配線基板CB之下表面CBb之複數個焊盤LA上分別供給焊料後，進行回流焊處理，於複數個焊盤LA上分別形成包含焊料之外部端子(凸塊電極、焊料凸塊)。又，亦可實施鍍覆處理等而於各焊盤LA上形成外部端子(凸塊電極)。 以此方式，於步驟S5中，於配線基板CB之下表面CBb之複數個焊盤LA分別形成外部連接用端子(此處為焊料球BL)。 以此方式，製造半導體裝置PKG。 又，作為作為另一形態，亦可使用多片式配線基板作為半導體裝置PKG之製造中使用之配線基板。於該情形時，於上述步驟S2中，準備將複數個上述配線基板CB陣列狀一體地相連而成之配線基板母體作為多片式配線基板。該配線基板母體具有複數個半導體裝置區域，且各個半導體裝置區域與自其獲得1個半導體裝置PKG之區域相對應。繼之，於上述步驟S3中，對配線基板母體之複數個半導體裝置區域進行覆晶連接步驟，於上述步驟S4中，對配線基板母體之複數個半導體裝置區域進行樹脂部UFR形成步驟，於上述步驟S5中，對配線基板母體之複數個半導體裝置區域進行焊料球之連接步驟。其後，藉由切斷配線基板母體，分割為各半導體裝置區域，而可自各個半導體裝置區域製造半導體裝置PKG。 ＜關於半導體晶片之構造＞ 圖20係本實施形態之半導體晶片CP之主要部分剖視圖，表示橫切焊墊PD與形成於其上之柱狀電極PL之截面。又，圖21係本實施形態之半導體晶片CP之主要部分俯視圖，表示焊墊PD形成區域附近俯視圖。於圖21中，表示焊墊PD、柱狀電極PL、開口部OP3a、開口部OP3b、及開口部SH之平面位置。再者，圖20與圖21之A4-A4線之位置上之剖視圖大致對應。又，下述圖22與圖21之A5-A5線之位置上之剖視圖大致對應。又，於圖20中，省略較層間絕緣膜IL6更向下之構造之圖示，但於下述圖22中，亦圖示有較層間絕緣膜IL6更向下之構造。 如圖20所示，焊墊PD係形成於層間絕緣膜IL6上，於層間絕緣膜IL6上，以覆蓋焊墊PD之一部分之方式形成有絕緣膜PA，焊墊PD之一部分自設置於絕緣膜PA之開口部OP3露出。即，雖然焊墊PD自開口部OP3露出，但於俯視下不與開口部OP3重疊之部分之焊墊PD係以絕緣膜PA覆蓋。具體而言，焊墊PD之中央部未被絕緣膜PA覆蓋，焊墊PD之外周部係以絕緣膜PA覆蓋。 絕緣膜PA為半導體晶片CP之最上層之膜(絕緣膜)，尤其，構成絕緣膜PA之樹脂膜PA2為半導體晶片之CP最上層之膜(絕緣膜)。絕緣膜PA可作為半導體晶片CP之表面保護膜而發揮功能。又，絕緣膜PA(尤其是絕緣膜PA1)亦可視為鈍化膜。 絕緣膜PA包含絕緣膜PA1及絕緣膜PA1上之樹脂膜(有機系絕緣膜)PA2之積層膜。絕緣膜PA1係作為鈍化膜發揮功能之絕緣膜，且包含無機絕緣膜。作為絕緣膜PA，可較佳使用氮化矽膜或氮氧化矽膜。氮化矽膜或氮氧化矽膜為吸濕性較低之絕緣膜，因此藉由使用氮化矽膜或氮氧化矽膜作為絕緣膜PA1，而可實現半導體晶片CP之耐濕性提昇。樹脂膜PA2較佳為聚醯亞胺膜(聚醯亞胺樹脂膜)。聚醯亞胺(polyimide)膜係重複單元中包含醯亞胺鍵之高分子，係有機絕緣膜之一種。藉由將半導體晶片CP之最上層(最表面)之膜設為樹脂膜PA2，而可獲得容易處理半導體晶片CP(容易進行操作)等優點。 絕緣膜PA1與樹脂膜PA2分別為絕緣膜，因此絕緣膜PA亦可視為積層複數層絕緣膜(具體而言為絕緣膜PA1與樹脂膜PA2之2層絕緣膜)而成的積層絕緣膜。再者，於本申請案中，積層絕緣膜意為積層複數層絕緣膜而成之積層膜。 絕緣膜PA具有使焊墊PD之至少一部分露出之開口部OP3，但由於絕緣膜PA為絕緣膜PA1與樹脂膜PA2之積層膜，因此絕緣膜PA之開口部OP3藉由樹脂膜PA2之開口部OP3b及絕緣膜PA1之開口部OP3a而形成。 開口部OP3a係貫通絕緣膜PA1，且於俯視下，內含於焊墊PD。因此，開口部OP3a之平面尺寸(平面面積)小於焊墊PD之平面尺寸(平面面積)，焊墊PD包含與開口部OP3a重疊之區域、及不與開口部OP3a重疊之區域，具體而言，焊墊PD之中央部未被絕緣膜PA1覆蓋，自絕緣膜PA1之開口部OP3a露出，而焊墊PD之外周部係以絕緣膜PA1覆蓋。 開口部OP3b貫通樹脂膜PA2，於俯視下，內含於焊墊PD。因此，開口部OP3b之平面尺寸(平面面積)小於焊墊PD之平面尺寸(平面面積)，焊墊PD包含與開口部OP3b重疊之區域、及不與開口部OP3b重疊之區域，具體而言，焊墊PD之中央部未被樹脂膜PA2覆蓋，自樹脂膜PA2之開口部OP3b露出，而焊墊PD之外周部係以樹脂膜PA2覆蓋。 於俯視下，開口部OP3a與開口部OP3b至少一部分重疊，開口部OP3a與開口部OP3b之重疊區域位於焊墊PD上，焊墊PD自開口部OP3a與開口部OP3b之重疊區域露出。 較佳為樹脂膜PA2之開口部OP3b於俯視下內含於絕緣膜PA1之開口部OP3a。於該情形時，開口部OP3b之平面尺寸(平面面積)小於開口部OP3a之平面尺寸(平面面積)，於俯視下，開口部OP3b整體與開口部OP3a重疊，而開口部OP3a包含與開口部OP3b重疊之區域、及不與開口部OP3b重疊之區域。 若開口部OP3b於俯視下內含於開口部OP3a，則絕緣膜PA之開口部OP3與樹脂膜PA2之開口部OP3b實質上一致，絕緣膜PA之開口部OP3之內壁(側壁)係藉由樹脂膜PA2之開口部OP3b之內壁(側壁)而形成。若開口部OP3b於俯視下內含於開口部OP3a，則於俯視下，於開口部OP3b之內側之區域，於焊墊PD上既未形成絕緣膜PA1亦未形成樹脂膜PA2，焊墊PD之上表面露出。又，若開口部OP3b於俯視下內含於開口部OP3a，則於開口部OP3a之內側且開口部OP3b之外側之區域，成為於焊墊PD上未形成絕緣膜PA1但形成有樹脂膜PA2之狀態，於開口部OP3a之外側之區域，成為於焊墊PD上形成有絕緣膜PA1與絕緣膜PA1上之樹脂膜PA2之積層膜之狀態。 較佳為開口部OP3b於俯視下內含於開口部OP3a之原因如下所述。 即，若開口部OP3b於俯視下內含於開口部OP3a，則絕緣膜PA之開口部OP3之內壁包含樹脂膜PA2之開口部OP3b之內壁，因此柱狀電極PL與樹脂膜PA2相接但不與絕緣膜PA1相接。絕緣膜PA1硬度相對較高，而與絕緣膜PA1相比，樹脂膜PA2較柔軟。藉由使柱狀電極PL形成於焊墊PD上，但使該柱狀電極PL與柔軟之樹脂膜PA2相接且不與較硬之絕緣膜PA1相接，而容易藉由柔軟之樹脂膜PA2緩和施加(作用)於柱狀電極PL之應力。與可藉由樹脂膜PA2緩和應力相應地，可抑制施加(作用)於柱狀電極PL之應力施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)。因此，若開口部OP3b於俯視下內含於開口部OP3a，則可減少自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力。 再者，於所製造之半導體裝置PKG中，半導體晶片CP係以半導體晶片CP之上表面與配線基板CB之上表面CBa對向之朝向、即以倒裝搭載於配線基板CB之上表面CBa上。然而，於提及半導體晶片CP內之構成要素(例如層間絕緣膜等)之情形時，無論為將半導體晶片CP搭載於配線基板CB上之前或之後，均將半導體晶片CP之上表面側設為上方，將半導體晶片CP之背面側設為下方而進行說明。因此，可謂無論於配線基板CB上搭載半導體晶片CP前或於配線基板CB上搭載半導體晶片CP後，於半導體晶片CP中，層間絕緣膜(IL～IL6)並非位於柱狀電極PL之上方，而是位於柱狀電極PL之下方。 開口部OP3a、OP3b各自之平面形狀較佳為圓形狀。又，焊墊PD之平面形狀例如為四邊形狀(更特定而言為矩形狀)，作為另一形態，亦可將焊墊PD之平面形狀設為圓形狀。焊墊PD較佳為以鋁為主體之鋁焊墊。 再者，作為鋁焊墊所使用之鋁膜，不僅可使用純鋁膜，還可較佳使用Al(鋁)與Si(矽)之化合物膜或合金膜、或Al(鋁)與Cu(銅)之化合物膜或合金膜、或Al(鋁)、Si(矽)及Cu(銅)之化合物膜或合金膜等。鋁焊墊所使用之鋁膜中Al(鋁)之組成比(含有率)大於50原子%(即富Al)，若為98原子%以上則更佳。 於自絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)露出之焊墊PD上，形成有柱狀電極PL。 如圖35所示，柱狀電極PL包含晶種層SE及晶種層SE上之銅(Cu)層CL。與銅(Cu)層CL之厚度相比，晶種層SE之厚度較薄，柱狀電極PL主要藉由銅(Cu)層CL形成。又，如下述圖36，亦存在柱狀電極PL包含晶種層SE、晶種層SE上之銅(Cu)層CL、及銅(Cu)層CL上之鎳(Ni)層NL之情形。晶種層SE包含單層或複數層金屬層，例如包含鉻(Cr)層及該鉻(Cr)層上之銅(Cu)層之積層膜。 於柱狀電極PL之前端面(上表面)上，形成有焊料層SD1。再者，柱狀電極PL之前端面(上表面)對應於與焊墊PD側為相反側之面。 於俯視下，柱狀電極PL之平面尺寸(平面面積)大於絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)之平面尺寸(平面面積)，柱狀電極PL於俯視下內含絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)(參照圖21)。因此，於俯視下，柱狀電極PL之一部分(外周部分)與絕緣膜PA(樹脂膜PA2)重疊。即，柱狀電極PL係形成於自絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)露出之焊墊PD上，但柱狀電極PL之一部分(外周部分)位於(騎上至)絕緣膜PA(樹脂膜PA2)上。 柱狀電極PL為具備柱型之立體形狀之柱狀電極。於本實施形態中，柱狀電極PL之平面形狀為圓形狀，柱狀電極PL具有圓柱形狀。 柱狀電極PL之前端面(上表面)大致平坦。柱狀電極PL之前端面(上表面)與焊墊PD之上表面大致平行，且，柱狀電極PL之前端面(上表面)與焊墊PD之上表面與構成半導體晶片CP之半導體基板SB之主面大致平行。再者，焊墊PD之上表面對應於與層間絕緣膜IL6為相反側之面。 形成於柱狀電極PL之前端面上之焊料層SD1具有圓頂形狀。其原因在於：如下所述，雖然焊料層SD1最初作為焊料鍍層形成，但其後使該焊料鍍層熔融並再固化。 柱狀電極PL之前端面較絕緣膜PA之上表面(主面)PA2a更突出。再者，絕緣膜PA之上表面PA2a與樹脂膜PA2之上表面相同，絕緣膜PA之上表面PA2a與樹脂膜PA2之上表面意指同一面。因此，絕緣膜PA之上表面PA2a係於在配線基板CB上搭載有半導體晶片CP之狀態下與配線基板CB對向之側之主面。 因此，柱狀電極PL一體地包含嵌入絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)內之部分、及自絕緣膜PA之上表面PA2a突出之部分。而且，柱狀電極PL中，自絕緣膜PA之上表面PA2a突出之部分之平面尺寸(平面面積)大於絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)之平面尺寸(平面面積)。即，柱狀電極PL中，嵌入絕緣膜PA之開口部OP3內之部分雖具有與絕緣膜PA之開口部OP3一致之形狀，但柱狀電極PL中自絕緣膜PA之上表面PA2a突出之部分於俯視下內含絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)。因此，柱狀電極PL中自絕緣膜PA之上表面PA2a突出之部分之外周部位置(騎上至)絕緣膜PA之上表面PA2a上。於俯視下與柱狀電極PL重疊之部分之絕緣膜PA之上表面PA2a與柱狀電極PL(更特定而言為構成柱狀電極PL之晶種層SE)相接。又，絕緣膜PA之開口部OP3之側壁(即樹脂膜PA2之開口部OP3b)亦與柱狀電極PL(更特定而言為構成柱狀電極PL之晶種層SE)相接。 絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)之平面形狀為圓形狀，反映於此，柱狀電極PL中嵌入絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)內之部分之平面形狀為圓形狀。因此，柱狀電極PL中嵌入絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)內之部分之立體形狀為圓柱狀。又，形成柱狀電極PL時使用之下述光抗蝕層RP1之開口部OP4之平面形狀為圓形狀，反映於此，柱狀電極PL中自絕緣膜PA之上表面PA2a突出之部分之平面形狀圓形狀。因此，柱狀電極PL中自絕緣膜PA之上表面PA2a突出之部分之立體形狀為圓柱狀。 以此方式，於半導體晶片CP之複數個焊墊PD上分別形成(接合)複數個柱狀電極PL，且於複數個柱狀電極PL各自之前端面上形成有焊料層SD1。 其次，參照圖22，對包含較層間絕緣膜IL6以下之構造之半導體晶片CP之截面構造進行說明。圖22為本實施形態之半導體晶片CP之主要部分剖視圖，表示包含較上述圖20所示之層間絕緣膜IL6更向下之構造之半導體晶片CP之截面。 本實施形態之半導體晶片CP係於半導體基板SB之主面形成有MISFET(Metal Insulator Semiconductor Field Effect Transistor，金屬絕緣體半導體場效電晶體)等半導體元件，且於該半導體基板SB上形成有包含複數層配線層之配線構造(多層配線構造)。以下，對本實施形態之半導體晶片CP之構成例具體地進行說明。 如圖22所示，於構成本實施形態之半導體晶片CP之包含單晶矽等之半導體基板SB，形成有MISFET等半導體元件。於半導體基板SB形成有複數個MISFET，但於圖22中，表示其中2個MISFET(此處為n通道型MISFETQn與p通道型MISFETQp)作為代表。 於半導體基板SB之主面，藉由STI(Shallow Trench Isolation，淺槽隔離)法等而形成有元件分離區域ST，於半導體基板SB中，於藉由該元件分離區域ST而規定之活性區域形成有MISFET(Qn、Qp)。 例如，於半導體基板SB形成有p型井PW及n型井NW，於p型井PW上介隔閘極絕緣膜GF而形成有閘極電極G1，於n型井NW上介隔閘極絕緣膜GF而形成有閘極電極G2。又，於p型井PW內，形成有源極-汲極用n型半導體區域NS，於n型井NW內，形成有源極-汲極用p型半導體區域PS。藉由閘極電極G1、該閘極電極G1之下之閘極絕緣膜GF、及閘極電極G1之兩側之n型半導體區域NS(源極-汲極區域)而形成n通道型MISFETQn。又，藉由閘極電極G2、該閘極電極G2之下之閘極絕緣膜GF、及閘極電極G2之兩側之p型半導體區域PS(源極-汲極區域)而形成p通道型MISFETQp。 再者，此處，作為形成於半導體基板SB之半導體元件，列舉MISFET為例進行了說明，但除此以外，亦可形成電容元件、電阻元件、記憶體元件、或其他構成之電晶體等。又，此處，作為半導體基板SB，列舉單晶矽基板為例進行了說明，但作為另一形態，亦可使用SOI(Silicon On Insulator，矽絕緣體)基板等作為半導體基板SB。 於半導體基板SB上，形成有包含複數層層間絕緣膜與複數層配線層之配線構造(多層配線構造)。 即，於半導體基板SB上，形成有複數層層間絕緣膜IL1、IL2、IL3、IL4、IL5，於該複數層層間絕緣膜IL1、IL2、IL3、IL4、IL5，形成有插塞V1、導通孔部V2、V3、V4及配線M1、M2、M3、M4。而且，於層間絕緣膜IL5上形成有層間絕緣膜IL6，於該層間絕緣膜IL6上形成有焊墊PD。再者，於層間絕緣膜IL6上，亦可形成與焊墊PD同層之配線(未圖示)。 具體而言，於半導體基板SB上，以覆蓋上述MISFET(Qn、Qp)之方式，形成有層間絕緣膜IL1，於該層間絕緣膜IL1嵌入有插塞V1，於嵌入有插塞V1之層間絕緣膜IL1上形成有層間絕緣膜IL2，於該層間絕緣膜IL2嵌入有配線M1。而且，於嵌入有配線M1之層間絕緣膜IL2上形成有層間絕緣膜IL3，於該層間絕緣膜IL3嵌入有配線M2，於嵌入有配線M2之層間絕緣膜IL3上形成有層間絕緣膜IL4，於該層間絕緣膜IL4嵌入有配線M3。而且，於嵌入有配線M3之層間絕緣膜IL4上形成有層間絕緣膜IL5，於該層間絕緣膜IL5嵌入有配線M4，於嵌入有配線M4之層間絕緣膜IL5上形成有層間絕緣膜IL6，於該層間絕緣膜IL6上形成有焊墊PD。層間絕緣膜IL1～IL6之各者可設為單層之絕緣膜或複數層絕緣膜之積層膜。而且，於層間絕緣膜IL6上，以覆蓋焊墊PD之方式形成有有絕緣膜PA，於該絕緣膜PA，形成有使焊墊PD之一部分露出之開口部OP3。而且，於自絕緣膜PA之開口部OP3(即樹脂膜PA2之開口部OP3b)露出之焊墊PD上形成有柱狀電極PL。 插塞V1包含導電體，配置於配線M1之下。插塞V1將配線M1與形成於半導體基板SB之各種半導體區域及閘極電極G1、G2等電性連接。 導通孔部V2包含導電體，與配線M2一體地形成，配置於配線M2與配線M1之間，將配線M2與配線M1電性連接。即，於層間絕緣膜IL3，藉由使用雙金屬鑲嵌法而嵌入有配線M2、及與配線M2一體形成之導通孔部V2。作為另一形態，亦可藉由使用單金屬鑲嵌法而分別形成導通孔部V2及配線M2，對於導通孔部V3、V4、V5亦相同。 導通孔部V3包含導電體，與配線M3一體地形成，配置於配線M3與配線M2之間，將配線M3與配線M2電性連接。即，於層間絕緣膜IL4，藉由使用雙金屬鑲嵌法而嵌入有配線M3、及與配線M3一體形成之導通孔部V3。 導通孔部V4包含導電體，與配線M4一體地形成，配置於配線M4與配線M3之間，將配線M4與配線M3電性連接。即，於層間絕緣膜IL5，藉由使用雙金屬鑲嵌法而嵌入有配線M4、及與配線M4一體形成之導通孔部V4。 又，此處，配線M1、M2、M3、M4係作為以金屬鑲嵌法形成之金屬鑲嵌配線(嵌入配線)圖示及說明，但並不限定於金屬鑲嵌配線，亦可進行圖案化而形成配線用導電體膜，例如亦可設為鋁配線。 於層間絕緣膜IL6，在俯視下與焊墊PD重疊之位置形成有開口部(穿通孔、貫通孔)SH，於開口部SH內，形成(嵌入)有導通孔部V5。導通孔部V5包含導電體，配置於焊墊PD與配線M4之間，將焊墊PD與配線M4電性連接。即，於層間絕緣膜IL6，藉由使用單層金屬鑲嵌法而嵌入有導通孔部V5。 再者，於本實施形態中，分別形成導通孔部V5與焊墊PD，作為另一形態，亦可將導通孔部V5與焊墊PD一體地形成。於將導通孔部V5與焊墊PD一體地形成之情形時，藉由將焊墊PD之一部分嵌入於層間絕緣膜IL6之開口部SH內而形成導通孔部V5。 對於焊墊PD、絕緣膜PA(包含開口部OP3a、OP3b)及柱狀電極PL之構成，如參照上述圖20及圖21所說明，因而此處省略其重複之說明。又，於上述圖7中，標註符號CPB之區域對應於圖22中較層間絕緣膜IL6以下之區域(配線構造形成區域)。 又，半導體晶片CP之配線構造(多層配線構造)包含複數層配線層、及複數層層間絕緣膜(IL1～IL6)，較佳為該配線構造所包含之複數層層間絕緣膜(IL1～IL6)中之1層以上使用低介電常數絕緣膜。藉由使用低介電常數絕緣膜，而可降低配線間之寄生電容。尤其，若層間絕緣膜IL2、IL3、IL4、IL5使用低介電常數絕緣膜，則於配線M1、M2、M3、M4，可確實地減少同層之配線間及上下之配線間之寄生電容。再者，低介電常數絕緣膜係指具有較氧化矽之介電常數(相對介電常數)更低介電常數(相對介電常數)之絕緣膜，亦可稱為低介電常數膜或Low-k膜。 ＜關於半導體晶片之製造步驟＞ 參照圖23～圖36對本實施形態之半導體晶片CP之製造步驟進行說明。圖23～圖36係本實施形態之半導體晶片CP之製造步驟中之主要部分剖視圖。 首先，如圖23所示，準備(預備)例如具有1～10 Ωcm左右之比電阻之p型之包含單晶矽等之半導體基板(半導體晶圓)SB。於該階段，半導體基板SB為半導體晶圓之狀態。 其次，於半導體基板SB使用STI法而形成元件分離區域ST，使用離子布植法形成p型井PW及n型井NW，於p型井PW及n型井NW上介隔閘極絕緣膜GF而形成閘極電極G1、G2，使用離子布植法形成n型半導體區域NS及p型半導體區域PS。藉此，於半導體基板SB形成n通道型MISFETQn與p通道型MISFETQp。 其次，於半導體基板SB上，以覆蓋MISFETQn、Qp之方式形成層間絕緣膜IL1，使用光微影技術及乾式蝕刻技術而於層間絕緣膜IL1形成接觸孔，於該接觸孔內嵌入導電膜，藉此形成插塞V1。 其次，於嵌入有插塞V1之層間絕緣膜IL1上形成層間絕緣膜IL2後，於層間絕緣膜IL2使用單金屬鑲嵌技術嵌入配線M1。繼之，於嵌入有配線M1之層間絕緣膜IL2上形成層間絕緣膜IL3後，於層間絕緣膜IL3使用雙金屬鑲嵌技術嵌入配線M2及導通孔部V2。繼之，於嵌入有配線M2之層間絕緣膜IL3上形成層間絕緣膜IL4後，於層間絕緣膜IL4使用雙金屬鑲嵌技術嵌入配線M3及導通孔部V3。繼之，於嵌入有配線M3之層間絕緣膜IL4上形成層間絕緣膜IL5後，於層間絕緣膜IL5使用雙金屬鑲嵌技術嵌入配線M4及導通孔部V4。 其次，於嵌入有配線M4之層間絕緣膜IL5上，形成層間絕緣膜IL6。繼之，使用光微影技術及蝕刻技術，於層間絕緣膜IL6形成開口部SH。當於層間絕緣膜IL6形成開口部SH時，於開口部SH之底部，露出配線M4之上表面。 其次，於層間絕緣膜IL6上，以填埋開口部SH內之方式形成導通孔部V5用導電膜後，使用CMP(Chemical Mechanical Polishing：化學機械研磨)法或回蝕法等去除開口部SH之外部之導電膜(導通孔部V5用導電膜)，於開口部SH內殘留導電膜(導通孔部V5用導電膜)。藉此，可形成包含嵌入於開口部SH內之導電膜(導通孔部V5用導電膜)之導通孔部V5。 於圖23中，表示半導體基板SB至層間絕緣膜IL6之積層構造，為了簡化圖式，以下之圖24～圖36省略較層間絕緣膜IL6以下之構造之圖示。再者，圖23表示與上述圖22對應之截面區域，而圖24～圖36表示與上述圖20對應之截面區域，因此於圖24～圖36中未圖示開口部SH及導通孔部V5。 其次，如圖24所示，於嵌入有導通孔部V5之層間絕緣膜IL6上形成焊墊PD。例如，於嵌入有導通孔部V5之層間絕緣膜IL6上，形成焊墊PD用導電膜後，使用光微影技術及蝕刻技術將該導電膜圖案化，藉此可形成焊墊PD。又，亦可當將焊墊PD用導電膜圖案化時，不僅形成焊墊PD，還形成與焊墊PD同層之配線。作為焊墊PD用導電膜，可使用如上述之鋁膜。焊墊PD之厚度可設為例如2～3 μm左右。 又，此處，對分別形成導通孔部V5與焊墊PD之情形進行了圖示及說明，作為另一形態，亦可將導通孔部V5與焊墊PD一體地形成。於該情形時，於未形成導通孔部V5之狀態下，於包含開口部SH內之層間絕緣膜IL6上形成焊墊PD用導電膜後，使用光微影技術及蝕刻技術將該導電膜圖案化，藉此形成焊墊PD。藉此，一體地形成焊墊PD與導通孔部V5。 其次，如圖25所示，於層間絕緣膜IL6上，以覆蓋焊墊PD之方式，形成絕緣膜PA1。絕緣膜PA1較佳為包含氮化矽膜或氮氧化矽膜，可使用CVD(Chemical Vapor Deposition：化學氣相沈積)法等形成。作為絕緣膜PA1之成膜法，尤其較佳為HDP(High Density Plasma：高密度電漿)-CVD法。絕緣膜PA1之厚度(形成膜厚)例如可設為0.1～2 μm左右。當成膜絕緣膜PA1時，焊墊PD係以絕緣膜PA1覆蓋，因此成為未露出之狀態。 其次，如圖26所示，於絕緣膜PA1形成開口部OP3a。開口部OP3a係藉由選擇性地去除焊墊PD上之絕緣膜PA1而形成，且係以開口部OP3a於俯視下內含於焊墊PD之方式形成。例如，於成膜絕緣膜PA1後，於絕緣膜PA1上，使用光微影技術而形成光阻圖案(未圖示)，將該光阻圖案用作蝕刻遮罩，對絕緣膜PA1進行蝕刻(乾式蝕刻)，藉此可於絕緣膜PA1形成開口部OP3a。開口部OP3a係以貫通絕緣膜PA1之方式形成，自開口部OP3a露出焊墊PD之至少一部分。 又，亦存在作為焊墊PD用導電膜，使用自下起依序為障壁導體膜(例如鈦膜、氮化鈦膜、或該等之積層膜)、鋁膜、障壁導體膜(例如鈦膜、氮化鈦膜、或該等之積層膜)之積層膜，將該積層膜圖案化而形成焊墊PD的情形。於該情形時，較佳為當於絕緣膜PA1形成開口部OP3a時，亦藉由蝕刻去除於開口部OP3a之底部露出之障壁導體膜(上層側之障壁導體膜)，使構成焊墊PD之鋁膜自開口部OP3a露出。 其次，如圖27所示，於包含自開口部OP3a露出之焊墊PD上之絕緣膜PA1上，形成樹脂膜PA2。樹脂膜PA2係形成於半導體基板SB之主面整個面，因此係形成於絕緣膜PA1上、及自絕緣膜PA1之開口部OP3a露出之焊墊PD上。於成膜樹脂膜PA2前之階段，焊墊PD已經自絕緣膜PA1之開口部OP3a露出，因此當成膜樹脂膜PA2時，自絕緣膜PA1之開口部OP3a露出之焊墊PD被樹脂膜PA2覆蓋，從而成為不露出之狀態。作為樹脂膜PA2，可較佳使用聚醯亞胺膜等。樹脂膜PA2例如可藉由塗佈法形成。樹脂膜PA2之厚度(形成膜厚)大於絕緣膜PA1之厚度(形成膜厚)，例如可設為5 μm左右。 其次，如圖28所示，於樹脂膜PA2形成開口部OP3b。開口部OP3b例如可如下所述地形成。即，藉由將樹脂膜PA2形成為感光性樹脂膜，並對該包含感光性樹脂之樹脂膜PA2進行曝光、顯影，而選擇性地去除成為開口部OP3b之部分之樹脂膜PA2，藉此於樹脂膜PA2形成開口部OP3b。其後，實施熱處理，使樹脂膜PA2硬化。開口部OP3b係以貫通樹脂膜PA2之方式形成，且自開口部OP3b露出焊墊PD之至少一部分。 又，作為另一形態，亦可將使用光微影技術形成於樹脂膜PA2上之光抗蝕層用作蝕刻遮罩，對樹脂膜PA2進行乾式蝕刻，藉此於樹脂膜PA2形成開口部OP3b，於該情形時樹脂膜PA2亦可並非感光性樹脂膜。 樹脂膜PA2之開口部OP3b係以於俯視下內含於絕緣膜PA1之開口部OP3a之方式形成。因此，當於樹脂膜PA2形成開口部OP3b時，絕緣膜PA1之開口部OP3a之內壁成為被樹脂膜PA2覆蓋之狀態。 以此方式，形成具有使焊墊PD之至少一部分露出之開口部OP3之絕緣膜PA。絕緣膜PA包含絕緣膜PA1及樹脂膜PA2。樹脂膜PA2之開口部OP3b於俯視下內含於絕緣膜PA1之開口部OP3a，因此絕緣膜PA之開口部OP3與樹脂膜PA2之開口部OP3b實質上一致，絕緣膜PA之開口部OP3之內壁(側壁)係包含樹脂膜PA2之開口部OP3b之內壁(側壁)。 其次，如圖29所示，於包含開口部OP3(OP3b)之側壁上、及自開口部OP3(OP3b)露出之焊墊PD上之絕緣膜PA(樹脂膜PA2)上，形成晶種層(晶種膜)SE。當形成晶種層SE時，自開口部OP3(OP3b)露出之焊墊PD之上表面被晶種層SE覆蓋，成為與該晶種層SE相接之狀態。 晶種層SE包含單層或複數層之金屬層，可使用濺鍍法等形成。例如可將鉻(Cr)層與該鉻(Cr)層上之銅(Cu)層之積層膜用作晶種層SE，於該情形時，鉻(Cr)層之厚度可設為例如0.1 μm左右，銅(Cu)層之厚度可設為例如0.2 μm左右。又，晶種層SE中之下層側之鉻(Cr)層可作為障壁導體層而發揮功能，例如具有防止銅之擴散之功能、及提昇柱狀電極PL與絕緣膜PA(樹脂膜PA2)之接著性(密接性)之功能，但並不限定於鉻(Cr)層。亦可代替鉻(Cr)層，使用例如鈦(Ti)層、鈦鎢(TiW)層、氮化鈦(TiN)層或鎢(W)層等。 其次，如圖30所示，於晶種層SE上使用光微影技術而形成光抗蝕層(光阻圖案)RP1。光抗蝕層RP1於柱狀電極PL預定形成區域具有開口部OP4。 於俯視下，光抗蝕層RP1之開口部OP4係內含於焊墊PD。又，光抗蝕層RP1之開口部OP4之平面尺寸(平面面積)大於樹脂膜PA2之開口部OP3b之平面尺寸(平面面積)，於俯視下，光抗蝕層RP1之開口部OP4內含樹脂膜PA2之開口部OP3b。因此，樹脂膜PA2之開口部OP3b之側壁(內壁)於俯視下位於光抗蝕層RP1之開口部OP4之內側。因此，不僅位於焊墊PD上之部分之晶種層SE，位於樹脂膜PA2上之部分之晶種層SE亦自光抗蝕層RP1之開口部OP4露出。 其次，如圖31所示，使用鍍覆法，於自光抗蝕層RP1之開口部OP4露出之晶種層SE上形成銅(Cu)層CL。銅(Cu)層CL為銅(Cu)鍍層。作為用以形成銅(Cu)層CL之鍍覆法，較佳為使用電鍍法。由於銅層CL係以鍍覆法形成，因而係選擇性地形成於自光抗蝕層RP1之開口部OP4露出之部分之晶種層SE上。因此，銅(Cu)層CL係選擇性地形成於光抗蝕層RP1之開口部OP4內。柱狀電極PL係主要藉由該銅(Cu)層CL形成。因此，柱狀電極PL為以銅為主體之Cu柱(Cu柱狀電極)。於使用電鍍法形成銅(Cu)層CL之情形時，晶種層SE可作為供電用導體層而發揮功能。銅層CL以銅(Cu)為主成分，銅(Cu)之含有率較佳為99原子%以上。 其次，如圖32所示，使用鍍覆法，於銅(Cu)層CL上形成焊料層(焊材、焊料部)SD1。焊料層SD1包含焊料(焊材)。焊料層SD1係以鍍覆法形成之焊料鍍層。作為用以形成焊料層SD1之鍍覆法，較佳為使用電鍍法。銅(Cu)層CL與其上之焊料層SD1係選擇性地形成於光抗蝕層RP1之開口部OP4內。 其次，如圖33所示，去除光抗蝕層RP1。繼之，如圖34所示，藉由蝕刻等而去除未被銅(Cu)層CL覆蓋而露出之部分之晶種層SE。藉此，將未被銅(Cu)層CL覆蓋而露出之部分之晶種層SE去除，但以銅(Cu)層CL覆蓋之部分之晶種層SE、即位於銅(Cu)層CL之下之部分之晶種層SE未被去除而殘存。 以此方式，如圖34所示，可形成柱狀電極PL。柱狀電極PL係藉由銅(Cu)層CL及銅(Cu)層CL之下之晶種層SE而形成。換言之，柱狀電極PL包含晶種層SE、及晶種層SE上之銅(Cu)層CL。與銅(Cu)層CL之厚度相比，晶種層SE之厚度較薄，因此柱狀電極PL係主要藉由銅(Cu)層CL形成。於柱狀電極PL之前端面(上表面)上形成有焊料層SD1。 銅(Cu)層CL係選擇性地成長於自光抗蝕層RP1之開口部OP4露出之晶種層SE上，因此銅(Cu)層CL之側面係藉由光抗蝕層RP1之開口部OP4之側壁(內壁)而規定，銅(Cu)層CL之外形形狀成為與光抗蝕層RP1之開口部OP4之形狀一致。即，銅(Cu)層CL之平面形狀成為與光抗蝕層RP1之開口部OP4之平面形狀對應。因此，藉由將光抗蝕層RP1之開口部OP4之形狀(平面形狀)設定為所期望之形狀，而可將銅(Cu)層CL形成為所期望之形狀，因此，可將柱狀電極PL形成為所期望之形狀。藉由利用選擇性地形成於光抗蝕層RP1之開口部OP4內之金屬層(此處為銅層CL)來形成柱狀電極PL，而使柱狀電極PL成為具備柱型之立體形狀之柱狀電極。於本實施形態中，藉由將光抗蝕層RP1之開口部OP4之平面形狀設為圓形狀，而可將柱狀電極PL之平面形狀設為圓形狀，從而可將柱狀電極PL設為圓柱形狀。 於該階段，焊料層SD1之形狀與柱狀電極PL之形狀大致一致，於柱狀電極PL為圓柱形狀之情形時，焊料層SD1亦成為圓柱形狀。其後，藉由實施熱處理(加熱處理)，而使焊料層SD1暫時熔融後再固化。藉此，焊料層SD1之形狀因熔融焊料之表面張力之影響而變形，如圖35所示，焊料層SD1成為圓頂形狀。若以此種方式實施熱處理，則可將柱狀電極PL之前端面與焊料層SD1牢固地接合。又，如圖35所示地將焊料層SD1設為圓頂形狀使焊料層SD1穩定，因此可抑制焊料層SD1自柱狀電極PL之脫落及損傷。 以此方式(藉由圖29～圖35之步驟)，獲得於複數個焊墊PD上分別形成(接合)複數個柱狀電極PL，且於複數個柱狀電極PL之各者之前端面上形成焊料層SD1的構造。 又，此處，對形成銅(Cu)層CL後，於銅(Cu)層CL上形成焊料層SD1之情形進行了說明。作為另一形態，亦可形成銅(Cu)層CL後，於形成焊料層SD1前，於銅(Cu)層CL上以鍍覆法(電鍍法)形成鎳(Ni)層，於該鎳(Ni)層上形成焊料層SD1。於該情形時，成為鎳層(鍍鎳層)介置於銅(Cu)層CL與焊料層SD1之間(參照圖36)。於圖36中表示該情形，柱狀電極PL係藉由晶種層SE、晶種層SE上之銅(Cu)層CL、及銅(Cu)層CL上之鎳(Ni)層NL而形成。再者，圖36表示與圖35相同步驟階段，不過對應於形成銅(Cu)層CL後且形成焊料層SD1前於銅(Cu)層CL上形成鎳(Ni)層NL的情形。再者，於形成鎳層(鍍鎳層)NL之情形時，鎳層NL之厚度薄於銅(Cu)層CL，例如為3 μm左右，柱狀電極PL之厚度之主體包含銅(Cu)層CL。 其後，視需要對半導體基板SB之背面側進行研削或研磨而使半導體基板SB之厚度變薄後，將半導體基板SB與半導體基板SB上之積層構造體一併切斷(切割)。此時，半導體基板SB與半導體基板SB上之積層構造體係藉由切割刀片(未圖示)而沿劃線區域被切斷(切割)。藉此，自半導體基板SB(半導體晶圓)之各晶片區域取得半導體晶片。 以此方式，可製造半導體晶片CP。 ＜關於研究之經過＞ 於在配線基板上覆晶連接半導體晶片之半導體裝置中，藉由將半導體晶片之複數個焊料凸塊連接於配線基板之複數個端子，而可進行覆晶連接。然而，近年來，伴隨半導體晶片之端子數之增加及半導體晶片之小型化，而半導體晶片中之焊料凸塊之間隔正不斷變窄。 因此，本發明者正在研究藉由先於半導體晶片之複數個焊墊上分別形成複數個柱狀電極後，將半導體晶片之複數個柱狀電極介隔焊料連接於配線基板之複數個端子，從而進行覆晶連接。 藉由採用以焊料連接半導體晶片之柱狀電極與配線基板之端子之構造，而半導體晶片與配線基板之間之間隔因使用柱狀電極變得容易變大，因此即便柱狀電極之鄰接間隔隨著半導體晶片之端子數之增加及半導體晶片之小型化而變小，亦容易對半導體晶片與配線基板之間填充底部填充樹脂。又，因使用柱狀電極，而可抑制各焊料連接部之焊料量，因此即便柱狀電極之鄰接間隔伴隨半導體晶片之端子數之增加及半導體晶片之小型化而變小，亦容易防止焊料連接部彼此接觸而短路。因此，為了響應半導體晶片之端子數之增加及半導體晶片之小型化之要求，較理想為採用以焊料連接半導體晶片之柱狀電極與配線基板之端子之構造。 又，半導體晶片具有包含複數層配線層之配線構造(多層配線構造)，藉由利用形成於該配線構造之配線將形成於半導體晶片內之元件接線，而形成半導體積體電路。伴隨半導體晶片之小型化之要求，半導體晶片內之配線之微細化亦不斷發展，但伴隨於此，配線間之距離(間隔)亦不斷變小。若配線間之距離變小，則擔心接近之配線間之電容(寄生電容)變大，於配線中傳送之信號之傳送速度降低，從而導致信號延遲及消耗電力之增加。因此，較理想為藉由使用低介電常數絕緣膜作為構成配線構造之層間絕緣膜，而降低接近之配線間之電容(寄生電容)。然而，雖然低介電常數絕緣膜之介電常數低於氧化矽膜，但低介電常數絕緣膜與氧化矽膜相比強度較低。 本發明者藉由試驗及模擬，對採用以焊料連接半導體晶片之柱狀電極與配線基板之端子之構造之情形時的半導體裝置之可靠性進行了研究。結果發現，於採用以焊料連接半導體晶片之柱狀電極與配線基板之端子之構造的情形時，優化各構件之尺寸等對於提昇所製造之半導體裝置之可靠性而言極其重要。 例如，於藉由覆晶連接而以焊料連接半導體晶片之柱狀電極與配線基板之端子時，於使焊料熔融、再固化後之冷卻時，應力容易自柱狀電極PL施加至半導體晶片之配線構造之層間絕緣膜。應力自柱狀電極PL施加至半導體晶片之配線構造之層間絕緣膜有使該層間絕緣膜產生損傷而導致層間絕緣膜之劣化之虞。尤其，於採用低介電常數絕緣膜作為層間絕緣膜之情形時，若應力自柱狀電極PL施加至強度較低之低介電常數絕緣膜，則該低介電常數絕緣膜容易產生損傷。半導體晶片之配線構造之層間絕緣膜產生損傷會導致包含該半導體晶片之半導體裝置之可靠性降低。因此，為了提昇半導體裝置之可靠性，希望使應力不易自柱狀電極PL施加至半導體晶片之配線構造之層間絕緣膜。 本發明者藉由試驗及模擬，新發現作為影響自柱狀電極PL施加至位於柱狀電極PL之下方之層間絕緣膜之應力之大小的主要因素，有柱狀電極PL之厚度h1 、柱狀電極PL之直徑D1 、及構成半導體晶片CP之半導體基板SB之厚度。並且發現，藉由如下述般優化該等因素，而可將自柱狀電極PL施加至位於柱狀電極PL之下方之層間絕緣膜之應力之大小減小至約一半。 於本實施形態中，於採用以焊料連接半導體晶片之柱狀電極與配線基板之端子之構造時，藉由如以下說明般優化各構件之尺寸等，而可提昇半導體裝置之可靠性。 ＜關於主要特徵與效果＞ 本實施形態之半導體裝置PKG為包含配線基板CB、及搭載於配線基板CB上之半導體晶片CP的半導體裝置。半導體晶片CP包含層間絕緣膜IL6(第1絕緣膜)、形成於層間絕緣膜IL6上之焊墊PD、形成於層間絕緣膜IL6上且具有使焊墊PD之一部分露出之開口部OP3(第1開口部)的絕緣膜PA(第2絕緣膜)、及形成於自開口部OP3露出之焊墊PD上之柱狀電極PL。配線基板CB包含端子TE、及具有使端子TE之一部分露出之開口部OP1(第2開口部)的抗蝕層SR1(第3絕緣膜)。半導體晶片CP之絕緣膜PA具有作為與配線基板CB對向之側之主面(第1主面)的上表面PA2a，又，配線基板CB之抗蝕層SR1具有作為與半導體晶片CP對向之側之主面(第2主面)的上表面SR1a。於俯視下，柱狀電極PL內含絕緣膜PA之開口部OP3(第1開口部)，柱狀電極PL之一部分與絕緣膜PA重疊。而且，半導體晶片CP之柱狀電極PL與配線基板CB之端子TE係介隔介置於柱狀電極PL與端子TE之間之焊料層SD而連接。 本實施形態之第1特徵為：柱狀電極PL自絕緣膜PA之上表面PA2a起之厚度(第1厚度、高度)h1 為焊料層SD自抗蝕層SR1之上表面SR1a起之厚度(第2厚度、高度)h2 之一半以上，且為厚度h2 以下。即，第1特徵為滿足h2 /2≦h1 ≦h2 之關係。再者，厚度h1 、h2 表示於圖7及圖17中。 滿足h2 /2≦h1 ≦h2 之關係等價於滿足h1 ≦h2 ≦h1 ×2之關係。因此，第1特徵等價於焊料層SD自抗蝕層SR1之上表面SR1a起之厚度h2 為柱狀電極PL自絕緣膜PA之上表面PA2a起之厚度h1 之1倍以上且2倍以下。 厚度h1 亦可視為自絕緣膜PA之上表面PA2a突出的部分之柱狀電極PL之厚度(高度)。又，厚度h1 亦可視為絕緣膜PA之上表面PA2a至柱狀電極PL之前端面之距離(於半導體晶片CP之厚度方向觀察時之距離)。又，厚度h1 亦可視為位於絕緣膜PA之上表面PA2a上之部分(即騎上至絕緣膜PA之上表面PA2a上之部分)之柱狀電極PL之厚度。無論如何，h1 為於半導體晶片CP之厚度方向觀察時之尺寸。 又，厚度h2 亦可視為自抗蝕層SR1之上表面SR1a突出的部分之焊料層SD之厚度(高度)。又，厚度h2 亦可視為抗蝕層SR1之上表面SR1a至焊料層SD之上表面(即自焊料層SD與柱狀電極PL之界面起)之距離(於配線基板CB之厚度方向觀察時之距離)。無論如何，h2 為於配線基板CB之厚度方向觀察時之尺寸。於配線基板CB之厚度方向觀察時，半導體晶片CP之絕緣膜PA之上表面PA2a與配線基板CB之抗蝕層SR1之上表面SR1a之間之距離(間隔)對應於柱狀電極PL之厚度h1 與焊料層SD之厚度h2 之合計(即h1 ＋h2 )。 以下，對較理想為滿足第1特徵(h2 /2≦h1 ≦h2 )之原因進行說明。 採用於焊墊PD上設置柱狀電極PL，並以焊料層SD連接半導體晶片CP之柱狀電極PL與配線基板CB之端子TE之構造的優點在於：因使用柱狀電極PL而使半導體晶片CP與配線基板CB之間之間隔變大；以及因使用柱狀電極PL而抑制焊料連接部之焊料量。就該觀點而言，在某種程度上希望柱狀電極PL之厚度h1 較大，若柱狀電極PL之厚度h1 較小，則使用柱狀電極PL之意義變小。就該觀點而言，柱狀電極PL之厚度h1 較佳為焊料層SD之厚度h2 之一半以上(即h2 /2≦h1 )。藉由使h2 /2≦h1 成立，而可確實享受使用柱狀電極PL所得之上述優點。藉此，即便柱狀電極PL之鄰接間隔伴隨半導體晶片CP之端子數之增加及半導體晶片CP之小型化而變小，亦容易對半導體晶片CP與配線基板CB之間填充底部填充樹脂(樹脂部UFR)。又，因確保了柱狀電極PL之厚度h1 ，而可抑制各焊料連接部(此處為焊料層SD)之焊料量，因此即便柱狀電極PL之鄰接間隔變小，亦容易防止焊料連接部彼此接觸而短路。因此，可實現半導體晶片CP之小型化及多端子化。 另一方面，若柱狀電極PL之厚度h1 過大，則會產生如下問題。施加至柱狀電極PL之應力係藉由存在於柱狀電極PL之下之絕緣膜PA(尤其是樹脂膜PA2)而被緩和。然而，若使柱狀電極PL之厚度h1 變大，則施加至柱狀電極PL之應力變大，變得無法藉由絕緣膜PA(尤其是樹脂膜PA2)充分緩和該應力，應力自柱狀電極PL傳遞至位於柱狀電極PL之下方之層間絕緣膜(IL1～IL6)，從而應力施加至該層間絕緣膜(IL1～IL6)。應力自柱狀電極PL施加至位於柱狀電極PL之下方之層間絕緣膜有導致該層間絕緣膜產生損傷之虞，使半導體裝置PKG之可靠性降低。根據本發明者之試驗與模擬，自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力之大小依存於柱狀電極PL之厚度h1 ，為了使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小，較有效為使柱狀電極PL之厚度h1 變小。 就該觀點而言，柱狀電極PL之厚度h1 較佳為焊料層SD之厚度h2 以下(即h1 ≦h2 )。藉由使h1 ≦h2 成立，而可使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小，因此可抑制或防止因來自柱狀電極PL之應力而導致位於柱狀電極PL之下方之層間絕緣膜產生損傷，從而可提昇半導體裝置之可靠性。 因此，作為第1特徵，較理想為滿足h2 /2≦h1 ≦h2 之關係。藉此，可確實地享受使用柱狀電極PL所得之上述優點，並且可確實地降低自柱狀電極PL施加至位於柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力。藉此，可提昇半導體裝置之可靠性。又，可使柱狀電極PL之鄰接間隔變小，因此可實現半導體晶片CP之小型化及多端子化。 圖37係表示藉由模擬而分析柱狀電極之厚度(圖37之橫軸)與自柱狀電極施加至柱狀電極之下方之層間絕緣膜之應力(圖37之縱軸)之相關性所得之結果的圖表。圖37之橫軸為柱狀電極之厚度，相當於上述厚度h1 。根據圖37之圖表，亦可知藉由使柱狀電極之厚度(h1 )變小，而可使自柱狀電極施加至柱狀電極之下方之層間絕緣膜之應力變小。柱狀電極PL之厚度h1 較佳為15～25 μm左右。因此，例如較佳為將柱狀電極PL之厚度h1 設為20 μm、將焊料層SD之厚度h2 設為30 μm之組合。 本實施形態之第2特徵為：柱狀電極PL之厚度h1 與焊料層SD之厚度h2 之合計(即h1 ＋h2 )為柱狀電極PL之直徑D1 之0.5倍以上且0.8倍以下。即，第2特徵為滿足D1 ×0.5≦h1 ＋h2 ≦D1 ×0.8之關係。直徑D1 表示於圖20及圖21中。柱狀電極PL之直徑D1 與上述光抗蝕層RP1之開口部OP4之直徑實質上相同。 再者，滿足D1 ×0.5≦h1 ＋h2 ≦D1 ×0.8之關係等價於0.5≦(h1 ＋h2 )/D1 ≦0.8之關係。 以下，對較理想為滿足第2特徵之理由進行說明。 當使柱狀電極PL之直徑D1 變小而使(h1 ＋h2 )/D1 變大時，作用於柱狀電極PL倒下之方向之應力變大。若作用於柱狀電極PL倒下之方向之應力變大，則應力容易自柱狀電極PL施加至位於柱狀電極PL之下方之層間絕緣膜(IL1～IL6)，因此欠佳。為了使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜之應力變小，較有效為使柱狀電極PL之直徑D1 變大。就該觀點而言，(h1 ＋h2 )/D1 較佳為0.8以下。 另一方面，若使柱狀電極PL之直徑D1 變大而使(h1 ＋h2 )/D1 變小，則會導致填充於半導體晶片CP與配線基板CB之間之底部填充樹脂(樹脂部UFR)之體積減少，從而導致利用底部填充樹脂之保護效果降低。又，使柱狀電極PL之直徑D1 變大而使(h1 ＋h2 )/D1 變小會導致柱狀電極PL之排列間距增大，對半導體晶片之小型化及多端子化不利。因此，過於使柱狀電極PL之直徑D1 變大而使(h1 ＋h2 )/D1 變小亦欠佳。就該觀點而言，(h1 ＋h2 )/D1 較佳為0.5以上。 因此，作為第2特徵，柱狀電極PL之厚度h1 與焊料層SD之厚度h2 之合計較理想為柱狀電極PL之直徑D1 之0.5倍以上且0.8倍以下(即D1 ×0.5≦h1 ＋h2 ≦D1 ×0.8)。藉此，可抑制作用於柱狀電極PL倒下之方向應力，使應力不易自柱狀電極PL施加至位於柱狀電極PL之下方之層間絕緣膜(IL1～IL6)，從而可提昇半導體裝置之可靠性。又，容易確保填充於半導體晶片CP與配線基板CB之間之底部填充樹脂(樹脂部UFR)之體積，因此可確實地獲得利用底部填充樹脂之保護效果。又，容易使柱狀電極PL之排列間距變小，對半導體晶片之小型化及多端子化有利。 圖38係表示藉由模擬而分析柱狀電極之直徑(圖38之橫軸)與自柱狀電極施加至柱狀電極之下方之層間絕緣膜之應力(圖38之縱軸)之相關性所得之結果的圖表。圖38之橫軸為柱狀電極之直徑，相當於上述直徑D1 。根據圖38之圖表，亦可知藉由使柱狀電極之直徑(D1 )變大，而可使自柱狀電極施加至柱狀電極之下方之層間絕緣膜之應力變小。柱狀電極PL之直徑D1 較佳為85～105 μm左右。 本實施形態之第3特徵為：絕緣膜PA之開口部OP3之直徑D2 為柱狀電極PL之直徑D1 之0.4倍以上且0.75倍以下。即，第3特徵為滿足D1 ×0.4≦D2 ≦D1 ×0.75之關係。直徑D1 、D2 表示於圖20及圖21中。再者，絕緣膜PA之開口部OP3包含樹脂膜PA2之開口部OP3b，因此絕緣膜PA之開口部OP3之直徑D2 與樹脂膜PA2之開口部OP3b之直徑相同。 於以下，對較理想為滿足第3特徵之理由進行說明。 若絕緣膜PA之開口部OP3之直徑D2 變小，則嵌入於絕緣膜PA之開口部OP3之部分之柱狀電極PL之直徑亦變小，嵌入於絕緣膜PA之開口部OP3之部分之柱狀電極PL中之電流密度變高。若嵌入於絕緣膜PA之開口部OP3之部分之柱狀電極PL中之電流密度變高，則有容易產生柱狀電極PL之劣化(例如電遷移所導致之劣化)，使EM(ElectroMigration，電遷移)壽命等降低之虞，因此欠佳。為了抑制柱狀電極PL之劣化，較有效為使絕緣膜PA之開口部OP3之直徑D2 變大。就該觀點而言，絕緣膜PA之開口部OP3之直徑D2 較佳為柱狀電極PL之直徑D1 之0.4倍以上(即D1 ×0.4≦D2 )。 又，絕緣膜PA(尤其是樹脂膜PA2)具有作為緩衝層(應力緩衝層、應力緩和層)之功能，施加至柱狀電極PL之應力藉由作為緩衝層之絕緣膜PA(尤其是樹脂膜PA2)而被緩和。然而，若使絕緣膜PA之開口部OP3之直徑D2 變大，則絕緣膜PA(尤其是樹脂膜PA2)作為緩衝層之功能變小，藉由絕緣膜PA(尤其是樹脂膜PA2)緩和施加至柱狀電極PL之應力之作用降低，因此應力容易自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)。 因此，若作為電遷移對策，為了降低流動於柱狀電極PL之電流密度而使將柱狀電極PL連接於焊墊PD之絕緣膜PA之開口部OP3之直徑D2 變得過大，則有絕緣膜PA(尤其是樹脂膜PA2)作為緩衝層之功能變小，自柱狀電極PL施加至層間絕緣膜之應力變大，使層間絕緣膜產生損傷之虞。因此，不宜使絕緣膜PA之開口部OP3之直徑D2 變得過大。為了使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小，較有效為使絕緣膜PA之開口部OP3之直徑D2 變小。就該觀點而言，絕緣膜PA之開口部OP3之直徑D2 較佳為柱狀電極PL之直徑D1 之0.75倍以下(即D2 ≦D1 ×0.75)。 因此，作為第3特徵，較理想為絕緣膜PA之開口部OP3之直徑D2 為柱狀電極PL之直徑D1 之0.4倍以上且0.75倍以下(即，D1 ×0.4≦D2 ≦D1 ×0.75)。藉此，可抑制嵌入於絕緣膜PA之開口部OP3之部分之柱狀電極PL中之電流密度，因此可抑制柱狀電極PL之劣化(例如電遷移所導致之劣化)，從而可提昇EM壽命等。又，容易確保絕緣膜PA(尤其是樹脂膜PA2)作為緩衝層之功能，從而可使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小。因此，可提昇半導體裝置之可靠性。 本實施形態之第4特徵為：絕緣膜PA具有包含無機絕緣膜之絕緣膜PA1、及絕緣膜PA1上之樹脂膜PA2之積層構造，於俯視下，絕緣膜PA1之開口部OP3a(第3開口部)內含樹脂膜PA2之開口部OP3b(第4開口部)，且絕緣膜PA之開口部OP3係藉由樹脂膜PA2之開口部OP3b而形成。 以下，對較理想為滿足第4特徵之理由進行說明。 若絕緣膜PA具有絕緣膜PA1及絕緣膜PA1上之樹脂膜PA2之積層構造，且於俯視下，絕緣膜PA1之開口部OP3a內含樹脂膜PA2之開口部OP3b，則絕緣膜PA之開口部OP3之內壁包含樹脂膜PA2之開口部OP3b之內壁，因此柱狀電極PL雖然與樹脂膜PA2相接，但不與絕緣膜PA1相接。由於樹脂膜PA2包含樹脂材料，從而相對柔軟，作為緩和施加至柱狀電極PL之應力之緩衝層(應力緩衝層、應力緩和層)之功能優異。因此，藉由使柱狀電極PL與樹脂膜PA2相接，但不與絕緣膜PA1相接，而可容易地利用樹脂膜PA2緩和施加至柱狀電極PL之應力，從而使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小。藉此，可抑制或防止來因自柱狀電極PL之應力導致位於柱狀電極PL之下方之層間絕緣膜產生損傷。因此，較理想為滿足第4特徵，藉此，可提昇半導體裝置之可靠性。例如，較佳為將開口部OP3a之直徑設為55 μm左右、且將開口部OP3b之直徑設為40 μm左右之組合。 又，絕緣膜PA1上之樹脂膜PA2中，作為緩和施加至柱狀電極PL之應力之緩衝層而發揮功能者係主要樹脂膜PA2，為了提昇該作為緩衝層之功能，而使用包含樹脂材料之絕緣膜(即樹脂膜PA2)作為半導體晶片CP之最上層之膜。考慮到樹脂膜PA2之該功能(作為緩衝層之功能)，樹脂膜PA2尤其較佳為聚醯亞胺樹脂膜。藉此，可利用樹脂膜PA2而更確實地緩和施加至柱狀電極PL之應力，從而更確實地減少自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力。 又，絕緣膜PA1藉由包含無機絕緣膜，而可作為鈍化膜而確實地發揮功能。又，絕緣膜PA1更佳為包含氮化矽膜或氮氧化矽膜，藉此，可提昇半導體晶片CP之耐濕性，進一步地，可提昇半導體裝置之可靠性。 本實施形態之第5特徵為：焊墊PD與柱狀電極PL之間之樹脂膜PA2之厚度(第3厚度)T1 大於焊墊PD之厚度(第4厚度)T2 ，且小於柱狀電極PL之厚度h1 。即，第5特徵為滿足T2 ＜T1 ＜h1 之關係。厚度T1 、T2 表示於圖7及圖20。 此處，厚度T1 為介置於焊墊PD之上表面(未被絕緣膜PA1覆蓋之部分之焊墊PD之上表面)與柱狀電極PL(騎上至樹脂膜PA2上之部分之柱狀電極PL)之間的部分之樹脂膜PA2之厚度。換言之，厚度T1 與於俯視下在開口部OP3a之內側且開口部OP3b之外側之區域之樹脂膜PA2之厚度對應。再者，厚度T1 、T2 為於半導體晶片CP之厚度方向上觀察時之尺寸。 以下，對較理想為滿足第5特徵之理由進行說明。 若樹脂膜PA2之厚度(T1 )變薄，則樹脂膜PA2作為緩衝層之功能變低，藉由樹脂膜PA2緩和施加至柱狀電極PL之應力之作用降低，因此應力容易自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)。因此，不宜使樹脂膜PA2之厚度(T1 )過薄。為了使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小，較有效為使樹脂膜PA2之厚度(T1 )變厚。就該觀點而言，樹脂膜PA2之厚度T1 較佳為大於(厚於)焊墊PD之厚度T2 (即T2 ＜T1 )。 另一方面，若樹脂膜PA2之厚度(T1 )過厚，則會因樹脂膜PA2之熱收縮率與構成配線構造之層間絕緣膜(IL1～IL6)之熱收縮率之差而導致半導體晶片CP容易翹曲。因此，不宜使樹脂膜PA2之厚度(T1 )過厚。就該觀點而言，樹脂膜PA2之厚度T1 較佳為小於柱狀電極PL之厚度h1 (即T1 ＜h1 )。 因此，作為第5特徵，較理想為樹脂膜PA2之厚度T1 大於焊墊PD之厚度T2 ，且小於柱狀電極PL之厚度h1 (即T2 ＜T1 ＜h1 )。藉此，可容易地確保樹脂膜PA2作為緩衝層之功能，從而使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小。藉此，可抑制或防止來自柱狀電極PL之應力導致位於柱狀電極PL之下方之層間絕緣膜產生損傷。又，容易抑制或防止樹脂膜PA2與層間絕緣膜(IL1～IL6)之熱收縮率之差導致半導體晶片CP不必要地翹曲。因此，可提昇半導體裝置之可靠性。 本實施形態之第6特徵為：於俯視下，抗蝕層SR1之開口部OP1之直徑D3 小於柱狀電極PL之直徑D1 (參照圖39)。即，第6特徵為滿足D3 ＜D1 之關係。直徑D3 表示於上述圖11及圖39中。又，自另一種角度而言，第6特徵為：於俯視下，抗蝕層SR1之開口部OP1內含於柱狀電極PL。此處，圖39為半導體裝置PKG之主要部分俯視圖，於圖39中，表示有半導體裝置PKG中之配線基板CB之端子、抗蝕層SR1之開口部OP1、及柱狀電極PL之平面佈局。 以下，對較理想為滿足第6特徵之理由進行說明。 若使俯視下抗蝕層SR1之開口部OP1之直徑D3 大於柱狀電極PL之直徑D1 ，則焊料層SD1之一部分會潤濕擴散至柱狀電極PL之側面。若焊料層SD1之一部分潤濕擴散至柱狀電極PL之側面，則難以將底部填充樹脂(樹脂部UFR)填充至半導體晶片CP與配線基板CB之間，因此欠佳。又，若焊料層SD1之一部分潤濕擴散至柱狀電極PL之側面，則相鄰之柱狀電極PL間短路之風險增加，因此欠佳。又，若焊料層SD1之一部分潤濕擴散至柱狀電極PL之側面，相應地焊料層SD之厚度h2 會變小，而半導體晶片CP與配線基板CB之間之間隔變窄，因此欠佳。 因此，作為第6特徵，較理想為於俯視下抗蝕層SR1之開口部OP1之直徑D3 小於柱狀電極PL之直徑D1 。自另一種角度而言，較理想為於俯視下抗蝕層SR1之開口部OP1內含於柱狀電極PL。藉此，將柱狀電極PL與端子TE連接之焊料層SD之形狀成為如上述圖7所示之形狀，構成焊料層SD1之焊料不易潤濕擴散至柱狀電極PL之側面。因此，容易於半導體晶片CP與配線基板CB之間填充底部填充樹脂(樹脂部UFR)，從而容易製造半導體裝置PKG。又，可降低相鄰之柱狀電極PL間短路之風險，因此可提昇半導體裝置之可靠性。例如，較佳為將柱狀電極PL之直徑D1 設為85～105 μm左右、且將劑層SR1之開口部OP1之直徑D3 設為65～75 μm左右的組合。 又，半導體晶片CP中之柱狀電極PL之排列間距較佳為大於柱狀電極PL之直徑D1 加上15 μm之值(D1 ＋15 μm)。即，較佳為確保於俯視下相鄰之柱狀電極PL之最接近距離(最接近之部位之間隔)為15 μm以上。藉此，容易對半導體晶片CP與配線基板CB之間填充底部填充樹脂(樹脂部UFR)。列舉一例，可將柱狀電極PL之直徑D1 設為85～105 μm左右，且將柱狀電極PL之排列間距設為130 μm左右。 對第6特徵進一步進行補充。如上所述，作為第6特徵，若於俯視下抗蝕層SR1之開口部OP1之直徑D3 小於柱狀電極PL之直徑D1 (D3 ＜D1 )，但抗蝕層SR1之開口部OP1之直徑D3 為柱狀電極PL之直徑D1 之0.7倍以上且0.8倍以下(D1 ×0.7≦D3 ≦D1 ×0.8)，則尤其較佳。以下，對其原因進行說明。 如上所述，作為第6特徵，於俯視下抗蝕層SR1之開口部OP1之直徑D3 小於柱狀電極PL之直徑D1 (D3 ＜D1 )，自另一種角度而言，於俯視下抗蝕層SR1之開口部OP1內含於柱狀電極PL。藉此，構成焊料層SD1之焊料不易潤濕擴散至柱狀電極PL之側面。然而，為了確實地防止構成焊料層SD1之焊料潤濕擴散至柱狀電極PL之側面，較佳為不僅於俯視下使抗蝕層SR1之開口部OP1之直徑D3 小於柱狀電極PL之直徑D1 ，進而將抗蝕層SR1之開口部OP1之直徑D3 設為柱狀電極PL之直徑D1 之0.8倍以下(即D3 ≦D1 ×0.8)。若將抗蝕層SR1之開口部OP1之直徑D3 設為柱狀電極PL之直徑D1 之0.8倍以下(D3 ≦D1 ×0.8)，則可更確實地防止構成焊料層SD1之焊料潤濕擴散至柱狀電極PL之側面。 另一方面，若抗蝕層SR1之開口部OP1之直徑D3 變小，則嵌入於抗蝕層SR1之開口部OP1之部分之焊料層SD之直徑亦變小，從而嵌入於抗蝕層SR1之開口部OP1之部分之焊料層SD中之電流密度變高。若嵌入於抗蝕層SR1之開口部OP1之部分之焊料層SD中之電流密度變高，則容易產生焊料層SD之劣化(例如電遷移所導致之劣化)，有EM壽命等降低之虞，因此欠佳。為了抑制或防止電流密度之增加所導致之焊料層SD之劣化，較有效為不使抗蝕層SR1之開口部OP1之直徑D3 變得過小。又，若抗蝕層SR1之開口部OP1之直徑D3 相對於柱狀電極PL之直徑D1 之比(即D3 /D1 )變小，則於以抗蝕層SR1之上表面SR1a與抗蝕層SR1之開口部OP1之內壁(側壁)形成之角部所相接之位置，形成焊料層SD之收縮部分，以該收縮部分為起點於焊料層SD產生龜裂之風險增加。為了抑制或防止焊料層SD之龜裂，較有效為不使抗蝕層SR1之開口部OP1之直徑D3 相對於柱狀電極PL之直徑D1 之比(即D3 /D1 )變得過小。即，為了抑制或防止焊料層SD之劣化及龜裂，較有效為不使抗蝕層SR1之開口部OP1之直徑D3 變得過小。 因此，作為第6特徵，尤其較佳為於俯視下抗蝕層SR1之開口部OP1內含於柱狀電極PL(開口部OP1之直徑D3 小於柱狀電極PL之直徑D1 )，但將抗蝕層SR1之開口部OP1之直徑D3 設為柱狀電極PL之直徑D1 之0.7倍以上且0.8倍以下(即D1 ×0.7≦D3 ≦D1 ×0.8)。即，尤其較佳為將抗蝕層SR1之開口部OP1之直徑D3 相對於柱狀電極PL之直徑D1 之比(D3 /D1 )設為0.7以上且0.8以下(即0.7≦D3 /D1 ≦0.8)。藉此，可確實地防止構成焊料層SD1之焊料潤濕擴散至柱狀電極PL之側面，可抑制或防止焊料層SD之劣化及龜裂，從而可更確實地提昇半導體裝置之可靠性。 再者，於圖39中，表示有端子TE之平面形狀為四邊形(矩形)之情形作為一例，但並不限定於此，端子TE之平面形狀亦可為圓形等。 本實施形態之第7特徵為：構成半導體晶片CP之半導體基板SB之厚度為25～300 μm。以下，對較理想為滿足第7特徵之理由進行說明。 若構成半導體晶片CP之半導體基板SB之厚度較厚，則半導體晶片CP不易變形。與此相對，若使構成半導體晶片CP之半導體基板SB之厚度較薄，則半導體晶片CP容易變形，可藉由半導體晶片CP之變形而緩和施加至構成半導體晶片CP之配線構造之層間絕緣膜(IL1～IL6)的應力。因此，使半導體基板SB之厚度變薄之作用在於使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小。就該觀點而言，較佳為在一定程度上使構成半導體晶片CP之半導體基板SB之厚度較薄，設為300 μm以下。另一方面，若半導體基板SB之厚度過薄，則半導體基板SB之破裂之風險增加，因此半導體基板SB之厚度較佳為25 μm以上。 因此，作為第7特徵，較理想為構成半導體晶片CP之半導體基板SB之厚度為25～300 μm之範圍內。藉此，可藉由半導體晶片CP之變形而緩和自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力，並且可確實地防止半導體基板SB破裂。因此，可提昇半導體裝置之可靠性，又容易製造半導體裝置。又，可提昇半導體裝置之製造良率。 圖40係表示藉由模擬而分析構成半導體晶片之半導體基板之厚度(圖40之橫軸)與自柱狀電極施加至柱狀電極之下方之層間絕緣膜之應力(圖40之縱軸)之相關性所得之結果的圖表。根據圖40之圖表，亦可知藉由使構成半導體晶片之半導體基板之厚度變薄，而可使自柱狀電極施加至柱狀電極之下方之層間絕緣膜之應力變小。因此，構成半導體晶片CP之半導體基板SB之厚度較佳為設為300 μm以下。 本實施形態之第8特徵為：絕緣膜PA之開口部OP3(樹脂膜PA2之開口部OP3b)之平面形狀為圓形狀(參照圖21)。又，若柱狀電極PL之平面形狀為圓形狀，則進而較佳。以下，對較理想為滿足第8特徵之理由進行說明。 絕緣膜PA之開口部OP3(樹脂膜PA2之開口部OP3b)之平面形狀可應用四邊形狀(矩形狀)、四邊形以外之多邊形狀、或圓形狀等各種平面形狀，其中，尤其較佳為圓形狀。藉由將絕緣膜PA之開口部OP3(樹脂膜PA2之開口部OP3b)之平面形狀設為圓形狀，而嵌入於絕緣膜PA之開口部OP3(樹脂膜PA2之開口部OP3b)之部分之柱狀電極PL成為圓柱狀。藉此，柱狀電極PL不易產生各向異性之應力，又，可防止產生應力集中於柱狀電極PL之角部之現象。藉由將柱狀電極PL之平面形狀設為圓形狀，而該效果進一步變大。藉此，可使自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力變小。因此，可抑制或防止來自柱狀電極PL之應力導致位於柱狀電極PL之下方之層間絕緣膜產生損傷。因此，可提昇半導體裝置之可靠性。 又，半導體晶片CP具有包含複數層配線層之配線構造。本實施形態若應用於半導體晶片CP之配線構造包含低介電常數絕緣膜之情形，則效果較大。其原因如下所述。 如上所述，近年來，半導體晶片內之配線之間隔越來越小，因此有接近之配線間之寄生電容變大，而導致信號延遲及消耗電力增加之虞。因此，較理想為藉由使用低介電常數絕緣膜作為構成半導體晶片之配線構造之層間絕緣膜，而降低接近之配線間之寄生電容，藉此，可提昇半導體裝置之性能。然而，低介電常數絕緣膜雖然介電常數較氧化矽膜更低，但低介電常數絕緣膜與氧化矽膜相比強度容易變弱。因此，於採用低介電常數絕緣膜作為配線構造所包含之層間絕緣膜之情形時，當應力自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜時，該層間絕緣膜產生損傷之風險變高。即，低介電常數絕緣膜可謂對於來自柱狀電極PL之應力之耐性較低之膜。 針對於此，於本實施形態中，藉由上述特徵(第1～第8特徵)，而降低自柱狀電極PL施加至柱狀電極PL之下方之層間絕緣膜(IL1～IL6)之應力。因此，即便於採用對應力之耐性較低之膜即低介電常數絕緣膜作為配線構造所包含之層間絕緣膜的情形時，亦可抑制或防止來自柱狀電極PL之應力導致包含低介電常數絕緣膜之層間絕緣膜產生損傷。因此，若將本實施形態應用於半導體晶片CP之配線構造包含低介電常數絕緣膜之情形，則可獲得降低半導體晶片CP內接近之配線間之寄生電容之效果，並且可抑制或防止該低介電常數絕緣膜因來自柱狀電極PL之應力產生損傷。因此，提昇半導體裝置之性能，並且可提昇半導體裝置之可靠性。這亦適用於下述第9特徵及第10特徵。 其次，對本實施形態之第1變化例進行說明。圖41及圖42係本實施形態之第1變化例之半導體裝置PKG之主要部分剖視圖(圖41)及主要部分俯視圖(圖42)。圖41表示與上述圖7對應之區域之剖視圖(局部放大剖視圖)，圖42表示與上述圖21對應之俯視圖。再者，圖41與圖42之A6-A6線之位置上之剖視圖大致對應。又，圖43係用以對第1變化例之半導體裝置之效果進行說明之說明圖，表示與上述圖7對應之區域之剖視圖。 再者，圖41及圖42所示之第1變化例之半導體裝置與上述圖7之半導體裝置之主要不同之處在於具有第9特徵。 即，第9特徵為：於焊墊PD及形成於該焊墊PD上之柱狀電極PL中，於俯視下，焊墊PD內含柱狀電極PL。即，於俯視下，柱狀電極PL內含於焊墊PD，不自焊墊PD伸出。自另一種角度而言，第9特徵為：於俯視下，半導體晶片CP之焊墊PD之側面(外周)PDS之位置與柱狀電極PL之側面PLS相同，或位於較柱狀電極PL之側面PLS更外側。此處，將俯視下遠離絕緣膜PA之開口部OP3之側設為外側，將靠近絕緣膜PA之開口部OP3之側設為內側。 再者，柱狀電極PL之側面PLS係位於絕緣膜PA之上表面PA2a上之部分(即騎上至絕緣膜PA之上表面PA2a上之部分)之柱狀電極PL之側面。柱狀電極PL之側面PLS於俯視下與絕緣膜PA2重疊，且與樹脂部UFR相接。即，柱狀電極PL之側面PLS為與樹脂部UFR相接之側面。 對於第9特徵之效果，一面對圖41與圖43進行對比，一面於以下進行說明。 當形成絕緣膜時，若該絕緣膜之基底存在階差，則有於該絕緣膜亦產生反映出基底之階差的階差之情形。絕緣膜PA係以使焊墊PD之上表面之一部分(中央部)自開口部OP3露出，且覆蓋焊墊PD之上表面之外周部與側面之方式形成。因此，有於絕緣膜PA之上表面PA2a形成因焊墊PD之側面PDS產生之階差DS的情形。於圖41及圖43之各者中，表示有於絕緣膜PA之上表面PA2a形成有因焊墊PD之側面PDS產生之階差DS的情形。再者，對圖41之情形與圖43之情形進行比較，圖41之情形相比圖43之情形，焊墊PD之平面尺寸(平面面積)更大，於圖41之情形時，於俯視下焊墊PD之側面PDS與柱狀電極PL未重疊，但於圖43之情形時，於俯視下焊墊PD之側面PDS與柱狀電極PL重疊。 於圖43之情形時，於絕緣膜PA之上表面PA2a形成有因焊墊PD之側面PDS產生之階差DS，且於該階差DS上亦存在柱狀電極PL。即，於圖43之情形時，於絕緣膜PA之上表面PA2a，柱狀電極PL甚至存在於較存在階差DS更外側之區域。於該情形時(圖43)，與絕緣膜PA相接之柱狀電極PL之下表面PLK不平坦，成為反映出階差DS之形狀。具體而言，柱狀電極PL之下表面PLK成為下表面PLK之端部附近區域向靠近半導體晶片CP側突出(突起)之形狀。再者，對柱狀電極PL中之與絕緣膜PA之上表面PA2a相接之面標註符號PLK而設為柱狀電極PL之下表面PLK。 於柱狀電極PL之下表面PLK具有如圖43之形狀之情形時，當溫度循環時(交替反覆高溫狀態與低溫狀態時)，因柱狀電極PL之下表面PLK之端部附近區域按壓絕緣膜PA，而導致應力施加至半導體晶片CP之焊墊PD或層間絕緣膜，容易產生焊墊PD之變形或層間絕緣膜之損傷。 為了抑制來自柱狀電極PL之應力所導致之焊墊PD之變形及層間絕緣膜之損傷，較有效為使與絕緣膜PA相接之柱狀電極PL之下表面PLK一直到下表面PLK之端部側均為平坦。為此，必須即便產生絕緣膜PA之階差DS，亦使柱狀電極PL之下表面PLK之形狀不受該階差DS影響。這可藉由以柱狀電極PL不存在於絕緣膜PA之階差DS上，且柱狀電極PL之側面PLS於俯視下位於較階差DS更內側之方式設計焊墊PD與柱狀電極PL而實現。 絕緣膜PA之階差DS係因焊墊PD之側面PDS而產生者，觀察絕緣膜PA之階差DS與焊墊PD之側面PDS之平面位置關係，絕緣膜PA之階差DS必然位於較焊墊PD之側面PDS更外側。再者，如上所述，於俯視下遠離絕緣膜PA之開口部OP3之側設為外側，靠近絕緣膜PA之開口部OP3之側設為內側。因此，若設為於俯視下柱狀電極PL內含於焊墊PD，且柱狀電極PL不自焊墊PD伸出，則必然成為於俯視下柱狀電極PL之側面PLS位於較絕緣膜PA之階差DS更內側，故而，柱狀電極PL不會存在於絕緣膜PA之階差DS上。藉此，如圖41所示，即便產生絕緣膜PA之階差DS，亦可使與絕緣膜PA相接之柱狀電極PL之下表面PLK一直到下表面PLK之端部側均為平坦。 即，於滿足上述第9特徵之情形時，即便於絕緣膜PA產生焊墊PD之側面PDS所引起之階差DS，該階差DS亦不會對柱狀電極PL之下表面PLK之形狀造成影響，可使與絕緣膜PA相接之柱狀電極PL之下表面PLK一直到下表面PLK之端部側均為平坦(參照圖41)。與圖43之情形相比，於圖41之情形時，得益於柱狀電極PL之下表面PLK平坦，當溫度循環時，可緩和自柱狀電極PL之下表面PLK施加至半導體晶片CP之焊墊PD或層間絕緣膜之應力，因此可抑制焊墊PD之變形、或層間絕緣膜之損傷。因此，藉由滿足第9特徵，而可抑制或防止當溫度循環時，來自柱狀電極PL之應力導致產生焊墊PD之變形及層間絕緣膜之損傷。藉此，可提昇半導體裝置之可靠性。 第9特徵亦可與上述第1～第8特徵之1個以上進行組合。 其次，對本實施形態之第2變化例進行說明。圖44係本實施形態之第2變化例之半導體裝置PKG之主要部分俯視圖，與上述圖39對應。於圖44中，表示有第2變化例之半導體裝置PKG中之配線基板CB之端子、抗蝕層SR1之開口部OP1、及柱狀電極PL之平面佈局。第2變化例之半導體裝置PKG之剖視圖與上述圖6及圖7基本相同。 圖44所示之第2變化例之半導體裝置具有第10特徵。第10特徵為：1.5≦D4 /D3 ≦2成立。 此處，如上所述，D3 為抗蝕層SR1之開口部OP1之直徑。又，D4 為端子TE之直徑。再者，端子TE包含銅層TE1及銅層TE1上之鎳層TE2，於俯視下鎳層TE2內含於銅層TE1，因此端子TE之直徑D4 與構成端子TE之銅層TE1之直徑對應。於第2變化例中，如圖44所示，端子TE之平面形狀、即構成端子TE之銅層TE1之平面形狀為圓形狀。又，與上述圖39之情形同樣地，於圖44之情形時，抗蝕層SR1之開口部OP1之平面形狀亦為圓形狀。再者，構成端子TE之鎳層TE2係形成於自抗蝕層SR1之開口部OP1露出之部分之銅層TE1上，因此抗蝕層SR1之開口部OP1之平面形狀及平面尺寸與構成端子TE之鎳層TE2之平面形狀及平面尺寸實質上相同。 於以下，對採用第10特徵之理由與效果進行說明。 由於抗蝕層SR1與端子TE(銅層TE1)之接著力並不那麼強，因而若抗蝕層SR1與端子TE(銅層TE1)之接觸面積較小，則抗蝕層SR1與端子TE(銅層TE1)之密接性(接著性)變低，擔心抗蝕層SR1與端子TE之界面之剝離。抗蝕層SR1與端子TE之界面之剝離會導致半導體裝置之可靠性之降低，因此欠佳。 因此，較理想為使抗蝕層SR1與端子TE(銅層TE1)之接觸面積在一定程度上變大，從而使抗蝕層SR1與端子TE之界面之剝離不易產生。要使端子TE(銅層TE1)與抗蝕層SR1之接觸面積變大，則要使端子TE之直徑D4 變大，或使抗蝕層SR1之開口部OP1之直徑D3 變小，這與使端子TE之直徑D4 相對於抗蝕層SR1之開口部OP1之直徑D3 之比(D4 /D3 )變大相對應。 即，若使D4 /D3 變小則抗蝕層SR1與端子TE(銅層TE1)之接觸面積變小，則擔心抗蝕層SR1與端子TE之界面之剝離，因此為了抑制或防止該剝離，較有效為不使D4 /D3 變得過小。 另一方面，若抗蝕層SR1之開口部OP1之直徑D3 變小，則嵌入於抗蝕層SR1之開口部OP1之部分之焊料層SD之直徑亦變小，而嵌入於抗蝕層SR1之開口部OP1之部分之焊料層SD中之電流密度變高。若嵌入於抗蝕層SR1之開口部OP1之部分之焊料層SD中之電流密度變高，則有容易產生焊料層SD之劣化(例如電遷移所引起之劣化)而使EM壽命等降低之虞，因此欠佳。為了抑制或防止因電流密度之增加而產生之焊料層SD之劣化，較有效為不使抗蝕層SR1之開口部OP1之直徑D3 變得過小。 又，使端子TE之直徑D4 變大會引起端子TE之排列間距變大，或相鄰之端子TE之間隔變窄。若端子TE之排列間距變大，則與此相應地半導體晶片CP之焊墊PD之排列間距變大，這與半導體晶片CP之小型化及多端子化之要求背道而馳，因此欠佳。又，若相鄰之端子TE之間隔變窄，則於配線基板CB中，難以對相鄰之端子TE之間穿入配線，因而導致配線基板CB之配線佈局之制約，欠佳。因此，為了抑制端子TE之排列間距，減少配線基板CB之配線佈局之制約，而較有效為不使端子TE之直徑D4 變得過大。 使端子TE之直徑D4 變大、及使抗蝕層SR1之開口部OP1之直徑D3 變小均以使端子TE之直徑D4 相對於抗蝕層SR1之開口部OP1之直徑D3 之比(D4 /D3 )變大之方式發揮作用。 因此，為了抑制或防止因電流密度之增加引起之焊料層SD之劣化，又，抑制端子TE之排列間距，減少配線基板CB之配線佈局之制約，較有效為不使D4 /D3 變得過大。 因此，於第2變化例中，採用上述第10特徵，滿足1.5≦D4 /D3 ≦2之關係。藉由滿足1.5≦D4 /D3 之關係，而可一定程度地確保抗蝕層SR1與端子TE之接觸面積，提昇抗蝕層SR1與端子TE之密接性，藉此，可使抗蝕層1與端子TE之界面處之剝離不易產生。又，藉由滿足D4 /D3 ≦2之關係，而可抑制或防止電流密度之增加引起之焊料層SD之劣化，又，可抑制端子TE之排列間距，減少配線基板CB之配線佈局之制約。因此，藉由滿足1.5≦D4 /D3 ≦2之關係，可提昇半導體裝置之可靠性，並且有利於半導體晶片CP之小型化(小面積化)及多端子化，又，可提昇配線基板CB之配線佈局之自由度。 又，敍述了關於上述第6特徵，較佳為滿足D1 ×0.7≦D3 ≦D1 ×0.8之關係，但當將該關係與作為第10特徵之1.5≦D4 /D3 ≦2之關係組合時，關於端子TE之直徑D4 與柱狀電極PL之直徑D1 ，較佳為滿足1.05≦D4 /D1 ≦1.6之關係。 第10特徵亦可與上述第1～第9特徵之1個以上進行組合。 又，於圖44中，將端子TE之平面形狀設為圓形狀。於將端子TE之平面形狀設為圓形狀之情形時，可獲得如下效果。 即，若將端子TE之平面形狀設為圓形狀，則可有效率地增大相鄰之端子TE之間隔。例如，端子TE之平面形狀為圓形之情形與四邊形之情形相比，若端子TE之排列間距相同，則相鄰之端子TE之間隔係端子TE之平面形狀為圓形之情形時大於端子TE之平面形狀為四邊形之情形時。因此，藉由將端子TE之平面形狀設為圓形狀，而可有效率地使相鄰之端子TE之間隔變大，於配線基板CB中容易於相鄰之端子TE間穿入配線，因此可進一步提昇配線基板CB中之配線佈局之自由度。 又，若將抗蝕層SR1之開口部OP1設為圓形狀，則焊料層SD不易產生各向異性之應力，又，可防止發生應力集中於焊料層SD之角部之現象。藉此，容易抑制或防止焊料層SD之劣化及龜裂。 其次，對柱狀電極PL中鎳層NL之有無進行補充。於上述圖7及圖35中，表示有銅層CL與焊料層SD之間未介置鎳層(鍍鎳層)之情形，柱狀電極PL係藉由晶種層SE及晶種層SE上之銅層CL而形成。作為另一形態，如參照上述圖36所說明，亦可藉由晶種層SE、晶種層SE上之銅層CL、及銅層CL上之鎳層NL而形成柱狀電極PL，於該情形時，鎳層NL介置於銅層CL與焊料層SD之間。 然而，與柱狀電極PL包含鎳層NL之情形相比(圖36)，如圖7及圖35所示，柱狀電極PL不包含鎳層NL，且於銅層CL與焊料層SD之間未介置有鎳層(NL)之情形更能提昇EM壽命。認為其原因如下。 首先，說明對於鎳層NL介置於構成柱狀電極PL之銅層CL與焊料層SD之間之半導體裝置(對應於適用圖36之柱狀電極PL之半導體裝置)，進行EM試驗之情形。於該情形時，產生鎳(Ni)自構成端子TE之鎳層TE2向焊料層SD側之擴散，於鎳層TE2與焊料層SD之間產生EM開路故障(open failures)，此現象成為決定EM壽命之主要因素。 其次，說明對於構成柱狀電極PL之銅層CL與焊料層SD之間未介置有鎳層(NL)之半導體裝置(對應於適用圖35之柱狀電極PL之半導體裝置)進行EM試驗之情形。於該情形時，因來自銅層CL之銅(Cu)之熱擴散而於構成端子TE之鎳層TE2上形成CuSn層，該CuSn層作為防止鎳(Ni)自鎳層TE2向焊料層SD擴散之障壁層發揮功能。因此，於構成端子TE之鎳層TE2與焊料層SD之間不易產生EM開路故障。於該情形時，產生於構成柱狀電極PL之銅層CL與焊料層SD之間而非產生於構成端子TE之鎳層TE2與焊料層SD之間的EM開路故障成為決定EM壽命之主要因素，但該EM壽命與適用圖36之柱狀電極PL之半導體裝置相比得到提昇(例如提昇25%左右)。 因此，藉由使柱狀電極PL不包含鎳層NL，且鎳層(NL)不介置於構成柱狀電極PL之銅層CL與焊料層SD之間，而可提昇EM壽命。因此，可進一步提昇半導體裝置之可靠性。 以上，對於由本發明者完成之發明，基於其實施形態進行了具體說明，毋庸置疑，本發明並不限定於上述實施形態，可於不脫離其主旨之範圍內進行各種變更。 另外，將上述實施形態(包含變化例)所記載之內容之一部分記載於以下。 [附記1] 一種半導體裝置，其係包含配線基板、及搭載於上述配線基板上之半導體晶片者，且 上述半導體晶片包含： 第1絕緣膜； 焊墊，其係形成於上述第1絕緣膜上； 第2絕緣膜，其係形成於上述第1絕緣膜上，且具有使上述焊墊之一部分露出之第1開口部；及 柱狀電極，其係形成於自上述第1開口部露出之上述焊墊上； 上述配線基板包含： 端子；及 第3絕緣膜，其具有使上述端子之一部分露出之第2開口部； 上述半導體晶片之上述第2絕緣膜具有與上述配線基板對向之側之第1主面， 上述配線基板之上述第3絕緣膜具有與上述半導體晶片對向之側之第2主面， 於俯視下，上述柱狀電極內含上述第1開口部，上述柱狀電極之一部分與上述第2絕緣膜重疊， 上述半導體晶片之上述柱狀電極與上述配線基板之上述端子係介隔介置於上述柱狀電極與上述端子之間之焊料層而連接， 於俯視下，上述第2開口部內含於上述柱狀電極，且 上述第2開口部之第3直徑係上述柱狀電極之第1直徑之0.7倍以上且0.8倍以下。 [附記2] 一種半導體裝置，其係包含配線基板、及搭載於上述配線基板上之半導體晶片者，且 上述半導體晶片包含： 第1絕緣膜； 焊墊，其係形成於上述第1絕緣膜上； 第2絕緣膜，其係形成於上述第1絕緣膜上，且具有使上述焊墊之一部分露出之第1開口部；及 柱狀電極，其係形成於自上述第1開口部露出之上述焊墊上； 上述配線基板包含： 端子；及 第3絕緣膜，其具有使上述端子之一部分露出之第2開口部； 上述半導體晶片之上述第2絕緣膜具有與上述配線基板對向之側之第1主面， 上述配線基板之上述第3絕緣膜具有與上述半導體晶片對向之側之第2主面， 於俯視下，上述柱狀電極內含上述第1開口部，上述柱狀電極之一部分與上述第2絕緣膜重疊， 上述半導體晶片之上述柱狀電極與上述配線基板之上述端子係介隔介置於上述柱狀電極與上述端子之間之焊料層而連接，且 於俯視下，上述焊墊內含上述柱狀電極。 [附記3] 一種半導體裝置，其係包含配線基板、及搭載於上述配線基板上之半導體晶片者，且 上述半導體晶片包含： 第1絕緣膜； 焊墊，其係形成於上述第1絕緣膜上； 第2絕緣膜，其係形成於上述第1絕緣膜上，且具有使上述焊墊之一部分露出之第1開口部；及 柱狀電極，其係形成於自上述第1開口部露出之上述焊墊上； 上述配線基板包含： 端子；及 第3絕緣膜，其具有使上述端子之一部分露出之第2開口部； 上述半導體晶片之上述第2絕緣膜具有與上述配線基板對向之側之第1主面， 上述配線基板之上述第3絕緣膜具有與上述半導體晶片對向之側之第2主面， 於俯視下，上述柱狀電極內含上述第1開口部，上述柱狀電極之一部分與上述第2絕緣膜重疊， 上述半導體晶片之上述柱狀電極與上述配線基板之上述端子係介隔介置於上述柱狀電極與上述端子之間之焊料層而連接，且 當將上述第3絕緣膜之上述第2開口部之直徑設為D3 ，且將上述端子之直徑設為D4 時，1.5≦D4 /D3 ≦2成立。In the following embodiments, For convenience, Sometimes it is divided into multiple chapters or implementation forms for explanation, However, except in the cases specifically stated, Their equivalence is not unrelated, Variations where one exists in part or all of the other, detailed, Supplementary explanations, etc. also, In the following embodiments, When referring to the number of elements (including the number, Value, the amount, Range, etc.), Except for the situations that are specifically stated and those that are clearly limited to a certain number in principle, etc., Is not limited to that specific quantity, It can also be more or less than a certain number. and then, In the following embodiments, Needless to say, Its constituent elements (including element steps, etc.), Except for the situations that are specifically stated and those that are deemed to be obviously necessary in principle, etc., Not necessary. Similarly, In the following embodiments, When referring to the shape of constituent elements, etc., Positional relationship, etc. Except for the situations that are specifically stated and the circumstances that are obviously not so in principle, etc., It includes substantially similar or similar to the shape and the like. This situation is also the same for the above numerical values and ranges. the following, The embodiment will be described in detail based on the drawings. Furthermore, In all the figures used to explain the embodiment, Mark the same symbol for components with the same function, And its repeated description is omitted. also, In the following embodiments, Except for special needs, In principle, the description of the same or the same part is not repeated. also, In the diagram used in the embodiment, Even in cross-sectional view, There are also cases where hatching is omitted for the convenience of viewing the drawings. also, Even from the top view, There are also cases where hatching is marked to facilitate the observation of the schema. (Embodiment) <Overall structure of semiconductor wafer> FIG. 1 is an overall plan view of a semiconductor wafer CP of this embodiment, A layout example of the columnar electrode PL in the semiconductor wafer CP is shown. 2 is a conceptual cross-sectional view of a semiconductor wafer CP, The cross-sectional view of the semiconductor wafer CP on line A1-A1 of FIG. 1 corresponds roughly to that of FIG. 2. The semiconductor wafer CP of this embodiment has an upper surface as a main surface, And the back surface (lower surface) which is the main surface opposite to the upper surface, In Figure 1, It indicates that there is an upper surface of the semiconductor wafer CP. Furthermore, In the semiconductor wafer CP, The main surface of the side on which the pad PD or the columnar electrode PL on the pad PD is formed is called the upper surface of the semiconductor wafer CP, The main surface opposite to the upper surface is called the back surface of the semiconductor wafer CP. As shown in Figure 1 and Figure 2, The semiconductor chip CP includes a plurality of pads (pad electrodes, Electrode pad, Bonding pad) PD, And a plurality of columnar electrodes (Cu columns, Column electrode) PL. Each columnar electrode PL protrudes from the upper surface of the semiconductor wafer CP. therefore, The columnar electrode PL can also be regarded as a protruding electrode. A plurality of columnar electrodes PL are formed on the plurality of pads PD of the semiconductor wafer CP, So looking down, The arrangement of the pads PD in the semiconductor wafer CP is the same as the arrangement of the columnar electrodes PL. which is, The pad PD is paired with the columnar electrode PL formed thereon. The pad PD and the columnar electrode PL formed thereon function as terminals for external connection of the semiconductor wafer CP. On the front end surface (upper surface) of each columnar electrode PL, The following solder layer SD1 is formed, However, the illustration of the solder layer SD1 is omitted in FIG. 2. Furthermore, In the columnar electrode PL, The surface (main surface) opposite to the side connected to the pad PD is the front end surface (upper surface) of the columnar electrode PL. As another form, There are also a plurality of pads PD of the semiconductor wafer CP not only including the pads (PD) on which the columnar electrodes PL are formed, This also includes the case where the pad (PD) of the columnar electrode PL is not formed thereon. In this case, The entire pad (PD) on which the columnar electrode PL is not formed is covered with the following insulating film PA. which is, According to electrical characteristics (grounding characteristics, etc.), For a part of the plurality of pads PD included in the semiconductor chip CP, Cover it with the following insulation film PA, With this, It is assumed that the pad is not electrically connected to the terminal TE of the following wiring board CB. The planar shape of the semiconductor wafer CP is a four-sided shape, More specifically, rectangular However, the corners of the rectangle can also be curved. In the case of Figure 1, On the upper surface of the semiconductor wafer CP (substantially the entire upper surface), A plurality of columnar electrodes PL are arranged in an array (matrix). which is, In the case of Figure 1, A plurality of columnar electrodes PL are arranged in a surface array on the upper surface of the semiconductor wafer CP. also, In the arrangement of the columnar electrodes PL (array-like arrangement), It is also possible to arrange a plurality of columnar electrodes PL in a so-called dislocation arrangement by arranging each row by a 1/2 pitch, This situation (the situation of misalignment) is shown in FIG. 3. FIG. 3 is also an overall top view of the semiconductor wafer CP as in FIG. 1, Another layout example of the columnar electrode PL in the semiconductor wafer CP is shown. <Structure of Semiconductor Device> FIGS. 4 and 5 are plan views showing the semiconductor device PKG of this embodiment, 4 shows a top view of the semiconductor device PKG, FIG. 5 shows a bottom view of the semiconductor device PKG. 6 is a cross-sectional view showing the semiconductor device PKG of this embodiment, The cross-sectional views of the semiconductor device PKG on the A2-A2 line in FIGS. 4 and 5 substantially correspond to those in FIG. 6. 7 is a cross-sectional view of the main part of the semiconductor device PKG of this embodiment, It shows an enlarged view of the area RG1 surrounded by a dotted line in FIG. 6. which is, 7 corresponds to an enlarged view of a region near the junction of the columnar electrode PL of the semiconductor wafer CP and the terminal TE of the wiring substrate CB. 8 is a top view of the wiring board CB used in the semiconductor device PKG, 9 is a bottom view of the wiring board CB, 10 is a cross-sectional view of the wiring board CB, 11 is a cross-sectional view of a main part of the wiring board CB. The cross-sectional views of the wiring substrate CB on the lines A3-A3 in FIGS. 8 and 9 generally correspond to those in FIG. 10. In Figure 8, The area CY indicated by the dotted line corresponds to the area where the semiconductor wafer CP is mounted (wafer mounting area). also, FIG. 11 is an enlarged view corresponding to the area RG2 surrounded by the broken line in FIG. 10. Furthermore, Figure 6 and Figure 10 are the same cross section, 7 and 11 are the same cross section. The semiconductor device PKG of this embodiment shown in FIGS. 4 to 7 is a semiconductor device in the form of a semiconductor package including a semiconductor wafer CP. As shown in Figures 4-7, The semiconductor device (semiconductor package) PKG of this embodiment includes a wiring board CB, Mount (arrange) the semiconductor wafer CP on the upper surface CBa of the wiring board CB, The resin portion (underfill resin) UFR that fills the space between the semiconductor wafer CP and the wiring board CB, A plurality of solder balls (external terminals, Bump electrode, Solder bump) BL. In the semiconductor device PKG, The semiconductor wafer CP is mounted on the upper surface CBa of the wiring board CB. which is, The semiconductor wafer CP is directed upward from the back side of the semiconductor wafer CP, The upper surface of the semiconductor wafer CP faces the upper surface CBa of the wiring substrate CB, Through a plurality of columnar electrodes PL, It is mounted (mounted) on the upper surface CBa of the wiring board CB. therefore, The semiconductor wafer CP is flip-chip bonded to the upper surface CBa of the wiring board CB. The plurality of columnar electrodes PL on the upper surface of the semiconductor wafer CP are separated by the solder layer (solder material, Solder Department) SD, A plurality of terminals (pads, pads, Conductive pad, Bonding wire, Engagement finger, Board side terminals, Electrode) TE. which is, Between the columnar electrode PL and the terminal TE, A solder layer SD containing solder (solder material) is interposed, And the columnar electrode PL and the terminal TE are electrically connected by the solder layer SD. therefore, The plurality of columnar electrodes PL on the upper surface of the semiconductor wafer CP are electrically and mechanically connected to the plurality of terminals TE on the upper surface CBa of the wiring substrate CB via the solder layer SD, respectively. therefore, The plurality of pads PD of the semiconductor wafer CP are electrically connected to the plurality of terminals TE of the upper surface CBa of the wiring substrate CB via the columnar electrode PL and the solder layer SD, respectively. With this, The semiconductor integrated circuit formed on the semiconductor wafer CP is electrically connected to the terminal TE on the upper surface CBa of the wiring substrate CB via the pad PD and the columnar electrode PL. Furthermore, In this application, When referring to solder or consumables, Not limited to alloys containing tin and lead, Lead-free solder alloy is also included. The lead-free solder alloy used for flip chip connection is preferably used with respect to tin containing silver, Zinc, copper, nickel, bismuth, An alloy of any one or more elements of antimony. In the semiconductor device PKG, Between the semiconductor wafer CP and the upper surface CBa of the wiring substrate CB, The resin portion UFR as the underfill resin is filled. The resin portion UFR seals and protects the connection between the columnar electrode PL of the semiconductor wafer CP and the terminal TE of the wiring board CB. also, The resin portion UFR can cushion the load applied to the connection portion between the columnar electrode PL and the terminal TE due to the difference in the thermal expansion rate between the semiconductor wafer CP and the wiring substrate CB. With this, The reliability of the semiconductor device PKG can be improved. The resin portion UFR includes, for example, resin materials such as epoxy resin or silicone resin (for example, thermosetting resin materials), It may also contain fillers (silica, etc.). The wiring board (package board) CB is rectangular (quadrilateral) in plane shape crossing its thickness, And has the upper surface CBa as a main surface, And the lower surface CBb as the main surface opposite to the upper surface CBa. The wafer mounting area (the area where the semiconductor wafer CP is mounted) in the upper surface CBa of the wiring substrate CB, In an arrangement corresponding to the arrangement of the columnar electrodes PL on the upper surface of the semiconductor wafer CP, A plurality of terminals TE are arranged. which is, When the semiconductor wafer CP is mounted on the wafer mounting area (CY) of the upper surface CBa of the wiring substrate CB, In such a manner that the plurality of columnar electrodes PL of the semiconductor wafer CP and the plurality of terminals TE of the wiring substrate CB are opposed to each other, A plurality of terminals TE are arranged on the wafer mounting area of the upper surface CBa of the wiring substrate CB. therefore, The arrangement of the terminals TE in the wafer mounting area (CY) of the upper surface CBa of the wiring substrate CB is the same as the arrangement of the columnar electrodes PL on the upper surface of the semiconductor wafer CP. therefore, As shown in Figure 1 above, When a plurality of columnar electrodes PL are arranged in an array on the upper surface of the semiconductor wafer CP, As shown in Figure 8, Wafer mounting area (CY) on the upper surface CBa of the wiring board CB, The plurality of terminals TE are arranged in an array. also, As shown in Figure 3 above, When a plurality of columnar electrodes PL are arranged in a staggered arrangement on the upper surface of the semiconductor wafer CP, As shown in Figure 12, Wafer mounting area (CY) on the upper surface CBa of the wiring board CB, The plurality of terminals TE are also arranged in a staggered arrangement. FIG. 12 is also a top view of the wiring board as in FIG. 8, A layout example of the terminal TE in the wiring board CB when the semiconductor wafer of FIG. 3 described above is mounted is shown. Furthermore, The wafer mounting area of the upper surface CBa of the wiring substrate CB corresponds to the stage after mounting the semiconductor wafer CP on the upper surface CBa of the wiring substrate CB, The area where the semiconductor wafer CP is mounted on the upper surface CBa of the wiring board CB, That is, the region on the upper surface CBa of the wiring board CB that overlaps with the semiconductor wafer CP in plan view. also, The wafer mounting area of the upper surface CBa of the wiring substrate CB corresponds to the stage before the semiconductor wafer CP is mounted on the upper surface CBa of the wiring substrate CB, In the upper surface CBa of the wiring board CB, a region where the semiconductor wafer CP is to be subsequently mounted (wafer pre-mounting region) is planned. therefore, The wafer mounting area of the upper surface CBa of the wiring substrate CB represents the same area before and after the mounting of the semiconductor wafer CP. which is, When the semiconductor wafer CP is mounted on the upper surface CBa of the wiring substrate CB, the area overlapping the semiconductor wafer CP in a plan view is a wafer mounting area whether before or after mounting of the semiconductor wafer CP. Here, The plan view refers to a situation viewed in a plane parallel to the upper surface CBa of the wiring board CB. also, In Figure 14 below, It shows that there is a wiring board CB used in the manufacture of the semiconductor device PKG. In the wiring board CB in FIG. 14 below, A solder layer SD2 is formed on the terminal TE of the upper surface CBa of the wiring board CB, However, in the manufactured semiconductor device PKG shown in FIGS. 4 to 7, The solder layer SD2 on the terminal TE of the wiring board CB and the solder layer SD1 formed on the columnar electrode PL of the semiconductor wafer CP before mounting are melted, Re-curing and integration, It becomes the solder layer SD. In the semiconductor device PKG, The columnar electrode PL of the semiconductor wafer CP is bonded and fixed to the terminal TE of the wiring substrate CB via the solder layer SD. also, In the semiconductor device PKG, On the lower surface CBb of the wiring board CB, A plurality of conductive pads (electrodes, electrodes, Solder pads, Terminal) LA. The wiring board CB includes, for example, a plurality of insulator layers (dielectric layers) and a plurality of conductor layers (wiring layers, (Conductor pattern layer) Multilayer wiring board (multilayer substrate) integrated by lamination. The terminal TE of the upper surface CBa of the wiring substrate CB is electrically connected to the pad LA of the lower surface CBb of the wiring substrate CB via the wiring of the wiring substrate CB and the via wiring formed inside the through hole of the wiring substrate CB. Furthermore, In Figure 6, In Figures 7 and 10, To simplify the diagram, Except for the terminal TE on the upper surface CBa of the wiring board CB and the pad LA on the lower surface CBb of the wiring board CB, The resist layer SR1 on the upper surface CBa side of the wiring board CB And the resist layer SR2 on the lower surface CBb side of the wiring board CB, The plurality of insulator layers and the wiring layer constituting the wiring substrate CB are not divided into separate layers and are collectively expressed as a base material layer (base layer) BS. therefore, In Figure 6, In Figures 7 and 10, Terminals TE are formed on the upper surface of the base material layer BS constituting the wiring board CB, A pad LA is formed on the lower surface of the substrate layer BS, However, the base material layer BS actually has a laminated structure including a plurality of insulator layers and a wiring layer interposed between the plurality of insulator layers. which is, The wiring board CB includes a plurality of conductor layers (wiring layer, Conductor pattern layer), However, a plurality of terminals TE are formed on the uppermost conductor layer of the plurality of conductor layers, In addition, a plurality of pads LA are formed on the lowermost conductor layer of the plurality of conductor layers. On the uppermost layer of the wiring board CB, A resist layer (solder resist layer, which is an insulating film (insulating layer) is formed Solder mask) SR1, The terminal TE is exposed from the opening OP1 of the resist layer SR1. which is, The resist layer SR1 is the uppermost film (insulating film) of the wiring substrate CB. also, At the lowest layer of the wiring board CB, A resist layer (solder resist layer, which is an insulating film (insulating layer) is formed Solder mask) SR2, The pad LA is exposed from the opening OP2 of the resist layer SR2. Resist layer SR1 SR2 is an insulating film that functions as a solder mask. which is, On the upper surface of the base material layer BS constituting the wiring board CB, A conductor layer containing a plurality of terminals TE is formed, And by covering the conductor layer, A resist layer SR1 is formed on the upper surface of the base material layer BS, This resist layer SR1 constitutes the uppermost layer of the wiring substrate CB, However, each terminal TE is exposed from the opening OP1 of the resist layer SR1. Furthermore, Looking down, The opening OP1 is included in the terminal TE, The plane size (plane area) of the opening OP1 is smaller than the plane size (plane area) of the terminal TE. therefore, The outer periphery of each terminal TE is covered with a resist layer SR1, The vicinity of the center of each terminal TE is not covered by the resist layer SR1 and is exposed from the opening OP1 of the resist layer SR1. The upper surface CBa of the wiring board CB is mainly composed of the upper surface SR1a of the resist layer SR1 of the wiring board CB. Furthermore, The upper surface SR1a of the resist layer SR1 is the surface (main surface) on the opposite side to the base material layer BS. therefore, The upper surface SR1a of the resist layer SR1 is the main surface of the side facing the semiconductor wafer CP in a state where the semiconductor wafer CP is mounted on the wiring substrate CB. The terminal TE includes a layered film of a copper (Cu) layer TE1 and a nickel (Ni) layer TE2 on the copper layer TE1. The nickel layer TE2 is a plating layer (nickel plating layer) formed by a plating method, Furthermore, it is formed on the copper layer TE1 exposed from the opening OP1 of the resist layer SR1. The reason is: When manufacturing the wiring board CB, After forming the resist layer SR1 having the opening OP1, A nickel plating layer to be a nickel layer TE2 is formed on the copper layer TE1 exposed from the opening OP1. therefore, In each terminal TE, The nickel layer TE2 is not formed on the entire surface of the copper layer TE1, And formed on the copper layer TE1 exposed from the opening OP1, A nickel layer TE2 is not formed on the copper layer TE1 covered by the resist layer SR1. therefore, The portions of each terminal TE that are not covered by the resist layer SR1 and exposed from the opening OP1 have a laminated structure of a copper layer TE1 and a nickel layer TE2 thereon, And the portion covered with the resist layer SR1 includes the copper layer TE1. also, On the lower surface of the base material layer BS constituting the wiring board CB, A conductor layer containing a plurality of pads LA is formed, By covering the conductor layer, A resist layer SR2 is formed on the lower surface of the base material layer BS, This resist layer SR2 constitutes the lowermost layer of the wiring board CB, However, each pad LA is exposed from the opening OP2 of the resist layer SR2. Furthermore, Looking down, The opening OP2 is included in the pad LA, The plane size (plane area) of the opening OP2 is smaller than the plane size (plane area) of the pad LA. therefore, The outer periphery of each pad LA is covered with a resist layer SR2, The vicinity of the center of each pad LA is not covered by the resist layer SR2 and exposed from the opening OP2 of the resist layer SR2. In the wiring board CB, The opening OP1 of the resist layer SR1 is arranged in the wafer mounting area in the same arrangement as the arrangement of the terminals TE, therefore, It is arranged in the wafer mounting area in the same arrangement as the arrangement of the terminals TE of the semiconductor wafer CP. therefore, In the wafer mounting area of the wiring board CB, The opening OP1 in which a plurality of resist layers SR1 are formed, One terminal TE is exposed from one opening OP1. On the lower surface CBb of the wiring board CB, The pads LA are arranged in an array (surface array). For each pad LA, Solder balls BL are connected (formed) as bump electrodes. therefore, In the semiconductor device PKG, A plurality of solder balls BL are arranged in an array on the lower surface CBb of the wiring board CB, These plural solder balls BL can function as external terminals (terminals for external connection) of the semiconductor device PKG. Each columnar electrode PL of the semiconductor wafer CP is electrically connected to each terminal TE of the upper surface CBa of the CB via the solder layer SD, and then, The pads LA on the lower surface CBb of the wiring substrate CB and the solder balls BL connected to the pads LA are electrically connected through the wiring or through-hole wiring of the wiring substrate CB. also, The plurality of solder balls BL disposed on the lower surface CBb of the wiring board CB may also include solder balls that are not electrically connected to the columnar electrodes PL of the semiconductor wafer CP, It can also be used for heat dissipation. <About manufacturing steps of semiconductor devices> Next, The manufacturing process of the semiconductor device PKG of this embodiment will be described. FIG. 13 is a process flow chart showing the manufacturing steps of the semiconductor device PKG of this embodiment. 14 to 19 are cross-sectional views showing manufacturing steps of the semiconductor device of this embodiment. From Figure 14 to Figure 16, In Figure 18 and Figure 19, The cross section corresponding to the above-mentioned FIG. 3 is shown. also, 17 is a partially enlarged cross-sectional view showing an enlarged part of FIG. 16, This shows an enlarged view of the area RG3 surrounded by the dotted line in the middle. When manufacturing the semiconductor device PKG, First of all, Prepare (preparation) the semiconductor wafer CP and the wiring board CB (step S1 in FIG. 13 S2). The semiconductor wafer CP is shown in the above FIGS. 1 to 3, As mentioned above, The semiconductor chip CP includes a plurality of pads PD, And a plurality of columnar electrodes PL respectively formed on the plurality of pads PD. also, The wiring board CB is shown in the above FIGS. 8 to 11, As mentioned above, The wiring board CB includes a plurality of terminals TE formed on the wafer mounting area of the upper surface CBa, And a plurality of pads LA formed on the lower surface CBb. The wiring board CB can be manufactured by various manufacturing methods. For example, you can use the build-up method, Subtraction method, Printing method, Sheet stacking method, Semi-additive method, Or an additive method or the like to produce the wiring board CB. After preparing the semiconductor wafer CP in step S1, In step S2, the wiring board CB is prepared, Or after preparing the wiring board CB in step S2, In step S1, the semiconductor wafer CP is prepared, Or perform step S1 and step S2 at the same time, At the same time, the wiring board CB and the semiconductor wafer CP are prepared. The wiring board CB used in the manufacture of the semiconductor device PKG, As shown in Figure 14, A solder layer (solder material, solder material, solder material) containing solder (solder material) is formed on the terminal TE of the upper surface CBa of the wiring board CB Solder Department) SD2. which is, In step S2, a wiring board CB having a solder layer SD2 formed on the terminal TE is prepared (manufactured). As another form, Or in step S2, After preparing the wiring board CB on which the solder layer SD2 is not formed on the terminal TE, Before proceeding to the flip-chip mounting step of the following step S3, A solder layer SD2 is formed on the terminal TE of the wiring board CB. The solder layer SD2 is formed on the terminal TE exposed from the opening OP1 of the resist layer SR1, therefore, It is formed on the nickel layer TE2 constituting the terminal TE. The solder layer SD2 can be formed using a plating method, for example. also, In the semiconductor wafer CP used in the manufacture of the semiconductor device PKG, Also as shown in Figure 15, Figure 20 Figure 22. As shown in Figure 35 and Figure 36, A solder layer SD1 is formed on the front end surface of each of the plurality of columnar electrodes PL of the semiconductor wafer CP. which is, In step S1, a semiconductor wafer CP having a solder layer SD1 formed on the columnar electrode PL is prepared (manufactured). Secondly, A flip chip connection step (step S3 in FIG. 13) is performed. in particular, Step S3 can be performed as described below. which is, As shown in Figure 15, With the upper surface of the semiconductor wafer CP facing the upper surface CBa of the wiring substrate CB, Above the wafer pre-mounting area of the upper surface CBa of the wiring board CB, A semiconductor wafer CP held by a tool (not shown) is arranged. Following that, Bring the semiconductor wafer CP held by the tool close to the upper surface CBa of the wiring board CB, The solder layer SD1 on the front end surface of the columnar electrode PL of the semiconductor wafer CP is brought into contact with the solder layer SD2 on the terminal TE of the wiring substrate CB. at this time, In such a manner that the plurality of columnar electrodes PL of the semiconductor wafer CP and the plurality of terminals TE of the wiring substrate CB are opposed to each other, The semiconductor wafer CP is aligned with the wiring substrate CB. also, at this time, At least one of the solder layer SD1 or the solder layer SD2 may be preheated to a hardness that is deformed after contact. Secondly, The solder layer SD1 and the solder layer SD2 are heated above the melting point. In the case of heating with the solder material layer D1 in contact with the solder layer SD2, If the semiconductor wafer CP is heated, Then, the heat transfer from the solder layer SD1 can also heat the solder layer SD2. When the solder layer SD1 and the solder layer SD2 are melted separately, The solder material constituting the solder layer SD1 and the solder material constituting the solder layer SD2 are melted and integrated. Thereafter, By cooling and solidifying the molten solder, The solder layer SD connecting the columnar electrode PL and the terminal TE is formed. The solder SD includes the melted and resolidified solder layer SD1 SD2. The solder layer SD is interposed between the columnar electrode PL of the semiconductor wafer CP and the terminal TE of the wiring substrate CB, The columnar electrode PL of the semiconductor wafer CP and the terminal TE of the wiring board CB are electrically and mechanically connected. This stage is shown in Fig. 16. also, When the solder layer SD1 and the solder layer SD2 are melted and integrated, The integrated molten solder is deformed in a way to become a physically stable shape by surface tension, It becomes a spherical shape. therefore, The solder layer SD formed by solidifying the molten solder has a spherical shape at a height position between the resist layer SR1 of the wiring board CB and the front end surface of the columnar electrode PL (see FIG. 17). In this way, Perform flip chip connection steps, The semiconductor wafer CP is mounted on the upper surface CBa of the wiring substrate CB, In addition, the plurality of columnar electrodes PL of the semiconductor wafer CP are bonded to the plurality of terminals TE of the wiring board CB via the solder layer SD, respectively. With this, The semiconductor wafer CP is fixed to the wiring substrate CB. also, When flip chip connection, To remove the metal oxide film at the connection, Instead, flux can be preferably used. E.g, Before mounting the semiconductor wafer CP on the wiring board CB, Flux is supplied in advance on the upper surface CBa of the wiring board CB (especially on the terminal TE). Thereafter, After the semiconductor wafer CP is placed on the wiring board CB, Perform the reflow soldering step (make the solder layer SD1 SD2 melts, After the heating step of forming the solder layer SD), Just wash it. Secondly, As shown in Figure 18, A resin portion UFR that is an underfill resin that fills between the semiconductor wafer CP and the wiring substrate CB is formed (step S4 in FIG. 13). Step S4 can be performed as follows, for example. which is, Supply between the semiconductor wafer CP and the upper surface CBa of the wiring substrate CB (filling, Inject) liquid or paste resin material. The resin material may also contain thermosetting resin material, Furthermore, fillers (silica particles, etc.) are contained. The resin material supplied between the semiconductor wafer CP and the upper surface CBa of the wiring substrate CB diffuses into the space between the semiconductor wafer CP and the upper surface CBa of the wiring substrate CB by a capillary phenomenon. Following that, By hardening the resin material by heating, etc., The resin portion UFR including the hardened resin material can be formed. As another form, Before the semiconductor wafer CP is placed on the wiring board CB (that is, before the above step S3 is performed), The above-mentioned resin material in liquid or paste form is pre-coated on the wafer pre-mounting area of the upper surface CBa of the wiring board CB, Thereafter, After connecting the columnar electrode PL of the semiconductor wafer CP to the terminal TE of the wiring substrate CB by flip chip connection, The resin material is hardened to form the resin portion UFR. In this case, In step S4, There is no need to supply resin material between the semiconductor wafer CP and the upper surface CBa of the wiring board CB, It becomes the step of hardening the resin material already existing between the semiconductor wafer CP and the upper surface CBa of the wiring substrate CB by heating. Secondly, As shown in Figure 19, The pad LA connection on the lower surface CBb of the wiring board CB (bonding, The solder ball BL is formed (step S5 in FIG. 13). In the solder ball BL connection step of step S5, For example, the lower surface CBb of the wiring board CB can be directed upward, Solder balls BL are arranged (mounted) on the plurality of pads LA on the lower surface CBb of the wiring board CB, and temporarily fixed with flux or the like, Perform reflow process (reflow process, Heat treatment) to melt the solder, Thereby, the solder ball BL is bonded to the pad LA of the lower surface CBb of the wiring board CB. Thereafter, You can also carry out washing steps as needed, Remove flux, etc. attached to the surface of the solder ball BL. In this way, The solder balls BL as external terminals (terminals for external connection) of the semiconductor device PKG are joined (formed). Furthermore, In this embodiment, The case where the solder ball BL is used as an external terminal of the semiconductor device PKG will be described, But it is not limited to this, For example, solder may be supplied to the pad LA by a printing method instead of the solder ball BL, Solder-containing external terminals (bump electrodes, Solder bump). In this case, After solder can be supplied to the plurality of pads LA on the lower surface CBb of the wiring board CB, Reflow soldering process, On solder pads LA, external terminals (bump electrodes, Solder bump). also, An external terminal (bump electrode) may be formed on each pad LA by performing a plating process or the like. In this way, In step S5, A plurality of pads LA on the lower surface CBb of the wiring board CB respectively form terminals for external connection (here, solder balls BL). In this way, Manufacture of semiconductor device PKG. also, As another form, A multi-piece wiring board can also be used as the wiring board used in the manufacture of the semiconductor device PKG. In this case, In the above step S2, As a multi-piece wiring board, a wiring board mother body in which a plurality of wiring boards CB are integrally connected in an array is prepared. The wiring board mother has a plurality of semiconductor device regions, And each semiconductor device area corresponds to an area from which one semiconductor device PKG is obtained. Following that, In the above step S3, Performing a flip-chip connection step on a plurality of semiconductor device regions of the wiring board mother, In the above step S4, Performing a resin portion UFR forming step on a plurality of semiconductor device regions of the wiring board mother, In the above step S5, The solder ball connection step is performed on the plurality of semiconductor device areas of the wiring board mother. Thereafter, By cutting the mother board of the wiring board, Divided into regions of semiconductor devices, Instead, the semiconductor device PKG can be manufactured from each semiconductor device region. <About the structure of the semiconductor wafer> FIG. 20 is a cross-sectional view of the main part of the semiconductor wafer CP of this embodiment, A cross section that crosses the pad PD and the columnar electrode PL formed thereon. also, 21 is a plan view of the main part of the semiconductor wafer CP of this embodiment, A plan view showing the vicinity of the pad PD formation area. In Figure 21, Indicates pad PD, Column electrode PL, Opening OP3a, Opening OP3b, And the planar position of the opening SH. Furthermore, FIG. 20 corresponds roughly to the cross-sectional view at the position along the line A4-A4 of FIG. 21. also, The following FIG. 22 roughly corresponds to the cross-sectional view taken along the line A5-A5 of FIG. 21. also, In Figure 20, The illustration of the structure further down than the interlayer insulating film IL6 is omitted, But in Figure 22 below, Also shown is a structure further downward than the interlayer insulating film IL6. As shown in Figure 20, The pad PD is formed on the interlayer insulating film IL6, On the interlayer insulating film IL6, An insulating film PA is formed to cover a part of the pad PD, A part of the pad PD is exposed from the opening OP3 provided in the insulating film PA. which is, Although the pad PD is exposed from the opening OP3, However, the pad PD that does not overlap the opening OP3 in plan view is covered with an insulating film PA. in particular, The central part of the pad PD is not covered by the insulating film PA, The outer periphery of the pad PD is covered with an insulating film PA. The insulating film PA is the uppermost film (insulating film) of the semiconductor wafer CP, especially, The resin film PA2 constituting the insulating film PA is the uppermost film (insulating film) of the CP of the semiconductor wafer. The insulating film PA can function as a surface protection film of the semiconductor wafer CP. also, The insulating film PA (particularly the insulating film PA1) can also be regarded as a passivation film. The insulating film PA includes an insulating film PA1 and a laminated film of a resin film (organic insulating film) PA2 on the insulating film PA1. The insulating film PA1 is an insulating film that functions as a passivation film, And contains an inorganic insulating film. As the insulating film PA, A silicon nitride film or a silicon oxynitride film can be preferably used. The silicon nitride film or silicon oxynitride film is an insulating film with low hygroscopicity. Therefore, by using a silicon nitride film or a silicon oxynitride film as the insulating film PA1, And the moisture resistance of the semiconductor wafer CP can be improved. The resin film PA2 is preferably a polyimide film (polyimide resin film). Polyimide (polyimide) membrane is a polymer containing repeatable imide bonds in the repeating unit, It is a kind of organic insulating film. By setting the film of the uppermost layer (uppermost surface) of the semiconductor wafer CP as the resin film PA2, And advantages such as easy handling of semiconductor wafer CP (easy handling) and the like can be obtained. The insulating film PA1 and the resin film PA2 are insulating films, Therefore, the insulating film PA can also be regarded as a laminated insulating film formed by laminating plural insulating films (specifically, two insulating films of the insulating film PA1 and the resin film PA2). Furthermore, In this application, The laminated insulating film means a laminated film formed by laminating plural insulating films. The insulating film PA has an opening OP3 that exposes at least a part of the pad PD, However, since the insulating film PA is a laminated film of the insulating film PA1 and the resin film PA2, Therefore, the opening OP3 of the insulating film PA is formed by the opening OP3b of the resin film PA2 and the opening OP3a of the insulating film PA1. The opening OP3a penetrates the insulating film PA1, And looking down, Included in pad PD. therefore, The plane size (plane area) of the opening OP3a is smaller than the plane size (plane area) of the pad PD, The pad PD includes an area overlapping the opening OP3a, And the area that does not overlap with the opening OP3a, in particular, The central part of the pad PD is not covered by the insulating film PA1, Exposed from the opening OP3a of the insulating film PA1, The outer periphery of the pad PD is covered with an insulating film PA1. The opening OP3b penetrates through the resin film PA2, Looking down, Included in pad PD. therefore, The plane size (plane area) of the opening OP3b is smaller than the plane size (plane area) of the pad PD, The pad PD includes an area overlapping the opening OP3b, And the area that does not overlap with the opening OP3b, in particular, The central portion of the pad PD is not covered by the resin film PA2, Exposed from the opening OP3b of the resin film PA2, The outer periphery of the pad PD is covered with a resin film PA2. Looking down, The opening OP3a overlaps at least a part of the opening OP3b, The overlapping area of the opening OP3a and the opening OP3b is located on the pad PD, The pad PD is exposed from the overlapping area of the opening OP3a and the opening OP3b. Preferably, the opening OP3b of the resin film PA2 is contained in the opening OP3a of the insulating film PA1 in a plan view. In this case, The plane size (plane area) of the opening OP3b is smaller than the plane size (plane area) of the opening OP3a, Looking down, The entire opening OP3b overlaps the opening OP3a, The opening OP3a includes an area overlapping the opening OP3b, And the area that does not overlap with the opening OP3b. If the opening OP3b is contained in the opening OP3a in a plan view, Then, the opening OP3 of the insulating film PA and the opening OP3b of the resin film PA2 are substantially the same, The inner wall (side wall) of the opening OP3 of the insulating film PA is formed by the inner wall (side wall) of the opening OP3b of the resin film PA2. If the opening OP3b is contained in the opening OP3a in a plan view, Looking down, In the area inside the opening OP3b, Neither the insulating film PA1 nor the resin film PA2 is formed on the pad PD, The upper surface of the pad PD is exposed. also, If the opening OP3b is contained in the opening OP3a in a plan view, Then the area inside the opening OP3a and outside the opening OP3b, The insulating film PA1 is not formed on the pad PD, but the resin film PA2 is formed. In the area outside the opening OP3a, The insulating film PA1 and the laminated film of the resin film PA2 on the insulating film PA1 are formed on the pad PD. The reason why the opening OP3b is preferably contained in the opening OP3a in a plan view is as follows. which is, If the opening OP3b is contained in the opening OP3a in a plan view, Then the inner wall of the opening OP3 of the insulating film PA includes the inner wall of the opening OP3b of the resin film PA2, Therefore, the columnar electrode PL is in contact with the resin film PA2 but not the insulating film PA1. The hardness of the insulating film PA1 is relatively high, Compared with the insulating film PA1, The resin film PA2 is relatively soft. By forming the columnar electrode PL on the pad PD, However, the columnar electrode PL is connected to the soft resin film PA2 and not to the harder insulating film PA1, It is easy to relax the stress applied to the columnar electrode PL by the soft resin film PA2. Correspondingly, the stress can be relieved by the resin film PA2, It is possible to suppress the stress (acting) applied to the columnar electrode PL from being applied to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL. therefore, If the opening OP3b is contained in the opening OP3a in a plan view, Then, the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL can be reduced. Furthermore, In the manufactured semiconductor device PKG, The semiconductor wafer CP is oriented so that the upper surface of the semiconductor wafer CP and the upper surface CBa of the wiring substrate CB face each other, That is, it is flip-chip mounted on the upper surface CBa of the wiring board CB. however, When referring to the constituent elements (such as interlayer insulating film, etc.) in the semiconductor wafer CP, Whether before or after the semiconductor wafer CP is mounted on the wiring substrate CB, The upper surface side of the semiconductor wafer CP is set upward, The back side of the semiconductor wafer CP will be described below. therefore, It can be said that before mounting the semiconductor wafer CP on the wiring substrate CB or after mounting the semiconductor wafer CP on the wiring substrate CB, In the semiconductor wafer CP, The interlayer insulating film (IL ～ IL6) is not located above the columnar electrode PL, Instead, it is located below the columnar electrode PL. Opening OP3a, The planar shape of each OP3b is preferably a circular shape. also, The planar shape of the pad PD is, for example, a four-sided shape (more specifically, a rectangular shape), As another form, The planar shape of the pad PD may also be a circular shape. The pad PD is preferably an aluminum pad mainly composed of aluminum. Furthermore, As the aluminum film used for aluminum pads, Not only can use pure aluminum film, Compound films or alloy films of Al (aluminum) and Si (silicon) can also be preferably used. Or compound film or alloy film of Al (aluminum) and Cu (copper), Or Al (aluminum), Compound film or alloy film of Si (silicon) and Cu (copper). The composition ratio (content ratio) of Al (aluminum) in the aluminum film used for the aluminum pad is greater than 50 atomic% (ie, Al-rich) It is more preferable if it is 98 atomic% or more. On the pad PD exposed from the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2), The columnar electrode PL is formed. As shown in Figure 35, The columnar electrode PL includes a seed layer SE and a copper (Cu) layer CL on the seed layer SE. Compared with the thickness of the copper (Cu) layer CL, The thickness of the seed layer SE is thinner, The columnar electrode PL is mainly formed by a copper (Cu) layer CL. also, As shown in Figure 36 below, There are also columnar electrodes PL containing the seed layer SE, The copper (Cu) layer CL on the seed layer SE, And the nickel (Ni) layer NL on the copper (Cu) layer CL. The seed layer SE includes a single layer or a plurality of metal layers, For example, a laminated film including a chromium (Cr) layer and a copper (Cu) layer on the chromium (Cr) layer. On the front end surface (upper surface) of the columnar electrode PL, The solder layer SD1 is formed. Furthermore, The front end surface (upper surface) of the columnar electrode PL corresponds to the surface opposite to the pad PD side. Looking down, The plane size (plane area) of the columnar electrode PL is larger than the plane size (plane area) of the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2), The columnar electrode PL includes the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2) in plan view (see FIG. 21). therefore, Looking down, A portion (outer peripheral portion) of the columnar electrode PL overlaps the insulating film PA (resin film PA2). which is, The columnar electrode PL is formed on the pad PD exposed from the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2), However, a part (peripheral part) of the columnar electrode PL is located on the insulating film PA (resin film PA2). The columnar electrode PL is a columnar electrode having a columnar three-dimensional shape. In this embodiment, The planar shape of the columnar electrode PL is a circular shape, The columnar electrode PL has a cylindrical shape. The front end surface (upper surface) of the columnar electrode PL is substantially flat. The front end surface (upper surface) of the columnar electrode PL is substantially parallel to the upper surface of the pad PD, And, The front end surface (upper surface) of the columnar electrode PL and the upper surface of the pad PD are substantially parallel to the main surface of the semiconductor substrate SB constituting the semiconductor wafer CP. Furthermore, The upper surface of the pad PD corresponds to the surface opposite to the interlayer insulating film IL6. The solder layer SD1 formed on the front end surface of the columnar electrode PL has a dome shape. The reason is: As described below, Although the solder layer SD1 was initially formed as a solder plating layer, However, the solder plating layer is subsequently melted and solidified again. The front end surface of the columnar electrode PL protrudes more than the upper surface (main surface) PA2a of the insulating film PA. Furthermore, The upper surface PA2a of the insulating film PA is the same as the upper surface of the resin film PA2, The upper surface PA2a of the insulating film PA and the upper surface of the resin film PA2 mean the same surface. therefore, The upper surface PA2a of the insulating film PA is the main surface on the side facing the wiring board CB in a state where the semiconductor wafer CP is mounted on the wiring board CB. therefore, The columnar electrode PL integrally includes a portion embedded in the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2), And the part protruding from the upper surface PA2a of the insulating film PA. and, In the columnar electrode PL, The plane size (plane area) of the portion protruding from the upper surface PA2a of the insulating film PA is larger than the plane size (plane area) of the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2). which is, In the columnar electrode PL, Although the portion embedded in the opening OP3 of the insulating film PA has a shape consistent with the opening OP3 of the insulating film PA, However, the portion of the columnar electrode PL that protrudes from the upper surface PA2a of the insulating film PA contains the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2) in plan view. therefore, The portion of the columnar electrode PL that protrudes from the upper surface PA2a of the insulating film PA is located on the outer peripheral portion (riding up) on the upper surface PA2a of the insulating film PA. The upper surface PA2a of the insulating film PA in a portion overlapping with the columnar electrode PL in plan view is in contact with the columnar electrode PL (more specifically, the seed layer SE constituting the columnar electrode PL). also, The side wall of the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2) is also in contact with the columnar electrode PL (more specifically, the seed layer SE constituting the columnar electrode PL). The planar shape of the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2) is round. Reflected in this, A planar shape of a portion of the columnar electrode PL embedded in the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2) is circular. therefore, The three-dimensional shape of the portion of the columnar electrode PL embedded in the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2) is cylindrical. also, The planar shape of the opening OP4 of the following photoresist layer RP1 used when forming the columnar electrode PL is a circular shape, Reflected in this, A planar shape of a portion of the columnar electrode PL that protrudes from the upper surface PA2a of the insulating film PA is circular. therefore, The three-dimensional shape of the portion of the columnar electrode PL that protrudes from the upper surface PA2a of the insulating film PA is cylindrical. In this way, Forming (joining) a plurality of columnar electrodes PL on the plurality of pads PD of the semiconductor wafer CP, And a solder layer SD1 is formed on the front end surface of each of the plurality of columnar electrodes PL. Secondly, Referring to Figure 22, The cross-sectional structure of the semiconductor wafer CP including the structure below the interlayer insulating film IL6 will be described. 22 is a cross-sectional view of a main part of a semiconductor wafer CP of this embodiment, A cross section of a semiconductor wafer CP including a structure further downward than the interlayer insulating film IL6 shown in FIG. 20 is shown. The semiconductor chip CP of this embodiment is formed with a MISFET (Metal Insulator Semiconductor Field Effect Transistor) on the main surface of the semiconductor substrate SB, Metal insulator semiconductor field effect transistor) and other semiconductor components, Furthermore, a wiring structure (multilayer wiring structure) including a plurality of wiring layers is formed on the semiconductor substrate SB. the following, The configuration example of the semiconductor wafer CP of this embodiment will be specifically described. As shown in Figure 22, In the semiconductor substrate SB including single crystal silicon and the like constituting the semiconductor wafer CP of this embodiment, Semiconductor elements such as MISFETs are formed. A plurality of MISFETs are formed on the semiconductor substrate SB, But in Figure 22, Two of them (here n-channel MISFETQn and p-channel MISFETQp) are used as representatives. On the main surface of the semiconductor substrate SB, With STI (Shallow Trench Isolation, Shallow trench isolation) method to form the element isolation region ST, In the semiconductor substrate SB, MISFET (Qn, Qn, Qp). E.g, P-type well PW and n-type well NW are formed on the semiconductor substrate SB, A gate electrode G1 is formed on the p-type well PW via the gate insulating film GF, A gate electrode G2 is formed on the n-type well NW via the gate insulating film GF. also, In the p-type well PW, Forming an n-type semiconductor region NS for source-drain, In the n-well NW, The p-type semiconductor region PS for source-drain is formed. With the gate electrode G1 The gate insulating film GF under the gate electrode G1, And n-type semiconductor regions NS (source-drain regions) on both sides of the gate electrode G1 to form an n-channel type MISFETQn. also, With the gate electrode G2, The gate insulating film GF under the gate electrode G2, The p-channel semiconductor region PS (source-drain region) on both sides of the gate electrode G2 forms a p-channel type MISFETQp. Furthermore, Here, As a semiconductor element formed on the semiconductor substrate SB, Listed MISFET as an example, But beyond that, Capacitive elements can also be formed, Resistance element, Memory components, Or other transistors. also, Here, As the semiconductor substrate SB, The single crystal silicon substrate is taken as an example, But as another form, You can also use SOI (Silicon On Insulator, A silicon insulator) substrate or the like is used as the semiconductor substrate SB. On the semiconductor substrate SB, A wiring structure (multilayer wiring structure) including a plurality of interlayer insulating films and a plurality of wiring layers is formed. which is, On the semiconductor substrate SB, A plurality of interlayer insulating films IL1 are formed IL2, IL3, IL4, IL5, On the plurality of interlayer insulating films IL1 IL2, IL3, IL4, IL5, Plug V1 is formed Via part V2, V3, V4 and wiring M1 M2, M3, M4. and, An interlayer insulating film IL6 is formed on the interlayer insulating film IL5, A pad PD is formed on this interlayer insulating film IL6. Furthermore, On the interlayer insulating film IL6, Wiring (not shown) in the same layer as the pad PD can also be formed. in particular, On the semiconductor substrate SB, To cover the above MISFET (Qn, Qp) way, An interlayer insulating film IL1 is formed, A plug V1 is embedded in the interlayer insulating film IL1, An interlayer insulating film IL2 is formed on the interlayer insulating film IL1 in which the plug V1 is embedded, The wiring M1 is embedded in the interlayer insulating film IL2. and, An interlayer insulating film IL3 is formed on the interlayer insulating film IL2 in which the wiring M1 is embedded, The wiring M2 is embedded in the interlayer insulating film IL3, An interlayer insulating film IL4 is formed on the interlayer insulating film IL3 in which the wiring M2 is embedded, The wiring M3 is embedded in the interlayer insulating film IL4. and, An interlayer insulating film IL5 is formed on the interlayer insulating film IL4 in which the wiring M3 is embedded, The wiring M4 is embedded in the interlayer insulating film IL5, An interlayer insulating film IL6 is formed on the interlayer insulating film IL5 in which the wiring M4 is embedded, A pad PD is formed on this interlayer insulating film IL6. Each of the interlayer insulating films IL1 to IL6 may be a single-layer insulating film or a laminated film of plural insulating films. and, On the interlayer insulating film IL6, An insulating film PA is formed to cover the pad PD, For this insulating film PA, An opening OP3 exposing a part of the pad PD is formed. and, A columnar electrode PL is formed on the pad PD exposed from the opening OP3 of the insulating film PA (that is, the opening OP3b of the resin film PA2). Plug V1 contains electrical conductors, Under the wiring M1. The plug V1 connects the wiring M1 and various semiconductor regions and gate electrodes G1 formed on the semiconductor substrate SB G2 isoelectric connection. The via hole portion V2 includes a conductor, It is formed integrally with the wiring M2, Placed between wiring M2 and wiring M1, The wiring M2 and the wiring M1 are electrically connected. which is, In the interlayer insulating film IL3, The wiring M2 is embedded by using the dual metal damascene method, And a via hole V2 integrally formed with the wiring M2. As another form, The via hole portion V2 and the wiring M2 can also be formed by using a single damascene method, For via part V3, V4, The same is true for V5. The via hole portion V3 contains a conductor, Integrally formed with wiring M3, Placed between wiring M3 and wiring M2, The wiring M3 and the wiring M2 are electrically connected. which is, In the interlayer insulating film IL4, The wiring M3 is embedded by using the double metal damascene method, And a via hole V3 integrally formed with the wiring M3. The via portion V4 contains a conductor, Integrated with wiring M4, Placed between wiring M4 and wiring M3, The wiring M4 and the wiring M3 are electrically connected. which is, In the interlayer insulating film IL5, The wiring M4 is embedded by using the double metal damascene method, And a via hole V4 integrally formed with the wiring M4. also, Here, Wiring M1 M2, M3, M4 is the illustration and description of damascene wiring (embedded wiring) formed by damascene method, But it is not limited to metal inlaid wiring, It can also be patterned to form a conductor film for wiring, For example, aluminum wiring may be used. In the interlayer insulating film IL6, An opening (through hole, Through hole) SH, In the opening SH, A via hole V5 is formed (embedded). The via hole portion V5 includes a conductor, It is arranged between the pad PD and the wiring M4, The pad PD and the wiring M4 are electrically connected. which is, In the interlayer insulating film IL6, The via hole portion V5 is embedded by using a single-layer damascene method. Furthermore, In this embodiment, Forming via holes V5 and pads PD, As another form, The via hole portion V5 and the pad PD may be formed integrally. When the via hole portion V5 and the pad PD are integrally formed, By embedding a part of the pad PD in the opening SH of the interlayer insulating film IL6, a via hole V5 is formed. For pad PD, Insulation film PA (including opening OP3a, OP3b) and the configuration of the columnar electrode PL, As explained with reference to FIGS. 20 and 21 above, Therefore, repeated explanations are omitted here. also, In Figure 7 above, The area marked with CPB corresponds to the area below the interlayer insulating film IL6 in FIG. 22 (wiring structure formation area). also, The wiring structure (multilayer wiring structure) of the semiconductor wafer CP includes a plurality of wiring layers, And multiple interlayer insulating films (IL1 ～ IL6), It is preferable to use a low dielectric constant insulating film for one or more of the plural interlayer insulating films (IL1 to IL6) included in the wiring structure. By using a low dielectric constant insulating film, And can reduce the parasitic capacitance between the wiring. especially, If the interlayer insulating film IL2, IL3, IL4, IL5 uses low dielectric constant insulating film, Then wiring M1 M2, M3, M4, It can reliably reduce the parasitic capacitance between the wiring on the same layer and between the upper and lower wiring. Furthermore, The low dielectric constant insulating film refers to an insulating film having a lower dielectric constant (relative dielectric constant) than the dielectric constant (relative dielectric constant) of silicon oxide, It can also be called low dielectric constant film or Low-k film. <About the manufacturing process of a semiconductor wafer> The manufacturing process of the semiconductor wafer CP of this embodiment is demonstrated with reference to FIGS. 23-36. 23 to 36 are cross-sectional views of main parts in the manufacturing process of the semiconductor wafer CP of this embodiment. First of all, As shown in Figure 23, Prepare (preparation), for example, a p-type semiconductor substrate (semiconductor wafer) SB including single crystal silicon having a specific resistance of about 1 to 10 Ωcm. At this stage, The semiconductor substrate SB is in a state of a semiconductor wafer. Secondly, The STI method is used to form the element isolation region ST on the semiconductor substrate SB, Using ion implantation method to form p-type well PW and n-type well NW, Gate electrodes G1 are formed on the p-type well PW and the n-type well NW via the gate insulating film GF G2, The ion implantation method is used to form the n-type semiconductor region NS and the p-type semiconductor region PS. With this, An n-channel type MISFETQn and a p-channel type MISFETQp are formed on the semiconductor substrate SB. Secondly, On the semiconductor substrate SB, To cover MISFETQn, The interlayer insulating film IL1 is formed by Qp, Using photolithography technology and dry etching technology to form contact holes in the interlayer insulating film IL1, Embed a conductive film in the contact hole, Thereby, the plug V1 is formed. Secondly, After forming the interlayer insulating film IL2 on the interlayer insulating film IL1 in which the plug V1 is embedded, The interlayer insulating film IL2 is embedded in the wiring M1 using a single damascene technique. Following that, After forming the interlayer insulating film IL3 on the interlayer insulating film IL2 in which the wiring M1 is embedded, The interlayer insulating film IL3 is embedded in the wiring M2 and the via portion V2 using a dual damascene technique. Following that, After forming the interlayer insulating film IL4 on the interlayer insulating film IL3 in which the wiring M2 is embedded, The interlayer insulating film IL4 is embedded in the wiring M3 and the via portion V3 using a dual damascene technique. Following that, After forming the interlayer insulating film IL5 on the interlayer insulating film IL4 in which the wiring M3 is embedded, The interlayer insulating film IL5 is embedded in the wiring M4 and the via portion V4 using dual damascene technology. Secondly, On the interlayer insulating film IL5 embedded with the wiring M4, An interlayer insulating film IL6 is formed. Following that, Using photolithography technology and etching technology, An opening SH is formed in the interlayer insulating film IL6. When the opening SH is formed in the interlayer insulating film IL6, At the bottom of the opening SH, The upper surface of the wiring M4 is exposed. Secondly, On the interlayer insulating film IL6, After forming the conductive film for the via hole V5 so as to fill the opening SH, Use CMP (Chemical Mechanical Polishing: Chemical mechanical polishing) method or etch-back method to remove the conductive film outside the opening SH (conductive film for the via hole V5), A conductive film (a conductive film for the via hole V5) remains in the opening SH. With this, A via hole portion V5 including a conductive film (a conductive film for the via hole portion V5) embedded in the opening SH can be formed. In Figure 23, It represents the laminated structure of the semiconductor substrate SB to the interlayer insulating film IL6, To simplify the diagram, In the following FIGS. 24 to 36, illustration of the structure below the interlayer insulating film IL6 is omitted. Furthermore, FIG. 23 shows a cross-sectional area corresponding to FIG. 22 above, 24 to 36 show the cross-sectional area corresponding to the above-mentioned FIG. 20, Therefore, the opening SH and the via hole V5 are not shown in FIGS. 24 to 36. Secondly, As shown in Figure 24, A pad PD is formed on the interlayer insulating film IL6 in which the via portion V5 is embedded. E.g, On the interlayer insulating film IL6 in which the via portion V5 is embedded, After forming the conductive film for pad PD, The conductive film is patterned using photolithography technology and etching technology, Thereby, the pad PD can be formed. also, When the pad PD is patterned with a conductive film, Not only to form the pad PD, The wiring of the same layer as the pad PD is also formed. As a conductive film for pad PD, An aluminum film as described above can be used. The thickness of the pad PD can be set to, for example, about 2 to 3 μm. also, Here, The case where the via hole portion V5 and the pad PD are separately formed is illustrated and described, As another form, The via hole portion V5 and the pad PD may be formed integrally. In this case, In a state where the via portion V5 is not formed, After forming the conductive film for pad PD on the interlayer insulating film IL6 including the opening SH, The conductive film is patterned using photolithography technology and etching technology, This forms the pad PD. With this, The pad PD and the via portion V5 are integrally formed. Secondly, As shown in Figure 25, On the interlayer insulating film IL6, By covering the pad PD, An insulating film PA1 is formed. The insulating film PA1 preferably includes a silicon nitride film or a silicon oxynitride film, CVD (Chemical Vapor Deposition: Chemical vapor deposition) method. As a method of forming the insulating film PA1, Particularly preferred is HDP (High Density Plasma: High density plasma) -CVD method. The thickness (forming film thickness) of the insulating film PA1 can be set to 0, for example. About 1 ～ 2 μm. When the insulating film PA1 is formed, the pad PD is covered with the insulating film PA1, so it is not exposed. Next, as shown in FIG. 26, an opening OP3a is formed in the insulating film PA1. The opening OP3a is formed by selectively removing the insulating film PA1 on the pad PD, and is formed in such a manner that the opening OP3a is included in the pad PD in a plan view. For example, after forming the insulating film PA1, a photoresist pattern (not shown) is formed on the insulating film PA1 using photolithography technology, and the photoresist pattern is used as an etching mask to etch the insulating film PA1 ( Dry etching), by which the opening OP3a can be formed in the insulating film PA1. The opening OP3a is formed to penetrate the insulating film PA1, and at least a part of the pad PD is exposed from the opening OP3a. In addition, there are also conductive films for pads PD, using barrier conductor films (for example, titanium films, titanium nitride films, or laminated films of these) in sequence from the bottom, aluminum films, and barrier conductor films (for example, titanium films) , A titanium nitride film, or a laminate film of such a laminate film), the laminate film is patterned to form a pad PD. In this case, it is preferable that when the opening OP3a is formed in the insulating film PA1, the barrier conductor film (barrier conductor film on the upper layer side) exposed at the bottom of the opening OP3a is also removed by etching to form the pad PD The aluminum film is exposed from the opening OP3a. Next, as shown in FIG. 27, a resin film PA2 is formed on the insulating film PA1 including the pad PD exposed from the opening OP3a. The resin film PA2 is formed on the entire main surface of the semiconductor substrate SB, so it is formed on the insulating film PA1 and the pad PD exposed from the opening OP3a of the insulating film PA1. In the stage before the resin film PA2 is formed, the pad PD has been exposed from the opening OP3a of the insulating film PA1, so when the resin film PA2 is formed, the pad PD exposed from the opening OP3a of the insulating film PA1 is covered by the resin film PA2 , So as not to be exposed. As the resin film PA2, a polyimide film or the like can be preferably used. The resin film PA2 can be formed by a coating method, for example. The thickness (formed film thickness) of the resin film PA2 is greater than the thickness (formed film thickness) of the insulating film PA1, and may be set to about 5 μm, for example. Next, as shown in FIG. 28, an opening OP3b is formed in the resin film PA2. The opening OP3b can be formed as follows, for example. That is, by forming the resin film PA2 as a photosensitive resin film, and exposing and developing the resin film PA2 containing the photosensitive resin, the resin film PA2 that becomes a portion of the opening OP3b is selectively removed, thereby The resin film PA2 forms an opening OP3b. Thereafter, heat treatment is performed to harden the resin film PA2. The opening OP3b is formed so as to penetrate the resin film PA2, and at least a part of the pad PD is exposed from the opening OP3b. Also, as another form, the photoresist layer formed on the resin film PA2 using photolithography may be used as an etching mask, and the resin film PA2 may be dry-etched to thereby form the opening OP3b in the resin film PA2 In this case, the resin film PA2 may not be the photosensitive resin film. The opening OP3b of the resin film PA2 is formed so as to be contained in the opening OP3a of the insulating film PA1 in a plan view. Therefore, when the opening OP3b is formed in the resin film PA2, the inner wall of the opening OP3a of the insulating film PA1 is covered with the resin film PA2. In this way, the insulating film PA having the opening OP3 exposing at least a part of the pad PD is formed. The insulating film PA includes an insulating film PA1 and a resin film PA2. Since the opening OP3b of the resin film PA2 is contained in the opening OP3a of the insulating film PA1 in a plan view, the opening OP3 of the insulating film PA and the opening OP3b of the resin film PA2 are substantially the same, and the opening OP3 of the insulating film PA The wall (side wall) is an inner wall (side wall) including the opening OP3b of the resin film PA2. Next, as shown in FIG. 29, a seed layer is formed on the insulating film PA (resin film PA2) on the side wall including the opening OP3 (OP3b) and on the pad PD exposed from the opening OP3 (OP3b) Seed film) SE. When the seed layer SE is formed, the upper surface of the pad PD exposed from the opening OP3 (OP3b) is covered with the seed layer SE and becomes in contact with the seed layer SE. The seed layer SE includes a single layer or a plurality of metal layers, and can be formed using a sputtering method or the like. For example, a layered film of a chromium (Cr) layer and a copper (Cu) layer on the chromium (Cr) layer can be used as the seed layer SE, in which case, the thickness of the chromium (Cr) layer can be set to, for example, 0. About 1 μm, the thickness of the copper (Cu) layer can be set to 0. Around 2 μm. In addition, the chromium (Cr) layer on the lower layer side of the seed layer SE can function as a barrier conductor layer, for example, it has the function of preventing the diffusion of copper, and lifting the columnar electrode PL and the insulating film PA (resin film PA2) The function of adhesion (adhesion) is not limited to the chromium (Cr) layer. Instead of a chromium (Cr) layer, for example, a titanium (Ti) layer, a titanium tungsten (TiW) layer, a titanium nitride (TiN) layer, a tungsten (W) layer, or the like can be used. Next, as shown in FIG. 30, a photoresist layer (photoresist pattern) RP1 is formed on the seed layer SE using photolithography. The photoresist layer RP1 has an opening OP4 in a region where the columnar electrode PL is to be formed. In plan view, the opening OP4 of the photoresist layer RP1 is contained in the pad PD. In addition, the planar size (planar area) of the opening OP4 of the photoresist layer RP1 is larger than the planar size (planar area) of the opening OP3b of the resin film PA2. In plan view, the opening OP4 of the photoresist layer RP1 contains resin The opening OP3b of the film PA2. Therefore, the side wall (inner wall) of the opening OP3b of the resin film PA2 is located inside the opening OP4 of the photoresist layer RP1 in a plan view. Therefore, not only the seed layer SE on the pad PD but also the seed layer SE on the resin film PA2 is exposed from the opening OP4 of the photoresist layer RP1. Next, as shown in FIG. 31, a plating method is used to form a copper (Cu) layer CL on the seed layer SE exposed from the opening OP4 of the photoresist layer RP1. The copper (Cu) layer CL is a copper (Cu) plating layer. As the plating method for forming the copper (Cu) layer CL, an electroplating method is preferably used. Since the copper layer CL is formed by a plating method, it is selectively formed on the seed layer SE exposed from the opening OP4 of the photoresist layer RP1. Therefore, the copper (Cu) layer CL is selectively formed in the opening OP4 of the photoresist layer RP1. The columnar electrode PL is mainly formed by the copper (Cu) layer CL. Therefore, the columnar electrode PL is a Cu column (Cu columnar electrode) mainly composed of copper. When the copper (Cu) layer CL is formed using an electroplating method, the seed layer SE can function as a conductor layer for power supply. The copper layer CL mainly contains copper (Cu), and the content of copper (Cu) is preferably 99 atomic% or more. Next, as shown in FIG. 32, a plating method is used to form a solder layer (solder material, solder portion) SD1 on the copper (Cu) layer CL. The solder layer SD1 contains solder (solder material). The solder layer SD1 is a solder plating layer formed by a plating method. As a plating method for forming the solder layer SD1, an electroplating method is preferably used. The copper (Cu) layer CL and the solder layer SD1 thereon are selectively formed in the opening OP4 of the photoresist layer RP1. Next, as shown in FIG. 33, the photoresist layer RP1 is removed. Next, as shown in FIG. 34, the seed layer SE that is not exposed by the copper (Cu) layer CL is removed by etching or the like. By this, the seed layer SE that is not exposed and covered by the copper (Cu) layer CL is removed, but the part of the seed layer SE covered by the copper (Cu) layer CL is located on the copper (Cu) layer CL The seed layer SE in the lower part remains without being removed. In this way, as shown in FIG. 34, the columnar electrode PL can be formed. The columnar electrode PL is formed by the copper (Cu) layer CL and the seed layer SE under the copper (Cu) layer CL. In other words, the columnar electrode PL includes the seed layer SE and the copper (Cu) layer CL on the seed layer SE. The thickness of the seed layer SE is thinner than the thickness of the copper (Cu) layer CL, so the columnar electrode PL is mainly formed by the copper (Cu) layer CL. A solder layer SD1 is formed on the front end surface (upper surface) of the columnar electrode PL. The copper (Cu) layer CL is selectively grown on the seed layer SE exposed from the opening OP4 of the photoresist layer RP1, so the side surface of the copper (Cu) layer CL passes through the opening of the photoresist layer RP1 The side wall (inner wall) of OP4 defines that the outer shape of the copper (Cu) layer CL conforms to the shape of the opening OP4 of the photoresist layer RP1. That is, the planar shape of the copper (Cu) layer CL corresponds to the planar shape of the opening OP4 of the photoresist layer RP1. Therefore, by setting the shape (planar shape) of the opening OP4 of the photoresist layer RP1 to a desired shape, the copper (Cu) layer CL can be formed into a desired shape, and therefore, the columnar electrode can be formed PL is formed into a desired shape. The columnar electrode PL is formed by using a metal layer (here, a copper layer CL) selectively formed in the opening OP4 of the photoresist layer RP1 to make the columnar electrode PL into a three-dimensional shape having a columnar shape Column electrode. In this embodiment, by setting the planar shape of the opening OP4 of the photoresist layer RP1 to a round shape, the planar shape of the columnar electrode PL can be set to a circular shape, so that the columnar electrode PL can be set to Cylindrical shape. At this stage, the shape of the solder layer SD1 substantially matches the shape of the columnar electrode PL. When the columnar electrode PL has a cylindrical shape, the solder layer SD1 also has a cylindrical shape. Thereafter, by performing heat treatment (heat treatment), the solder layer SD1 is temporarily melted and then solidified. As a result, the shape of the solder layer SD1 is deformed by the influence of the surface tension of the molten solder. As shown in FIG. 35, the solder layer SD1 becomes a dome shape. If the heat treatment is performed in this way, the front end surface of the columnar electrode PL can be firmly bonded to the solder layer SD1. In addition, as shown in FIG. 35, the solder layer SD1 is formed into a dome shape to stabilize the solder layer SD1, so that the solder layer SD1 can be prevented from falling off and being damaged from the columnar electrode PL. In this way (through the steps of FIGS. 29 to 35), a plurality of columnar electrodes PL are formed (joined) on the plurality of pads PD, respectively, and formed on the front end surface of each of the plurality of columnar electrodes PL The structure of the solder layer SD1. Furthermore, here, the case where the solder layer SD1 is formed on the copper (Cu) layer CL after forming the copper (Cu) layer CL has been described. As another form, after forming the copper (Cu) layer CL, before forming the solder layer SD1, a nickel (Ni) layer is formed on the copper (Cu) layer CL by a plating method (electroplating method). The solder layer SD1 is formed on the Ni) layer. In this case, a nickel layer (nickel-plated layer) is interposed between the copper (Cu) layer CL and the solder layer SD1 (see FIG. 36). This situation is shown in FIG. 36, and the columnar electrode PL is formed by the seed layer SE, the copper (Cu) layer CL on the seed layer SE, and the nickel (Ni) layer NL on the copper (Cu) layer CL . Furthermore, FIG. 36 shows the same step stage as FIG. 35, but corresponds to the case where the nickel (Ni) layer NL is formed on the copper (Cu) layer CL after the copper (Cu) layer CL is formed and before the solder layer SD1 is formed. Furthermore, in the case of forming a nickel layer (nickel plating layer) NL, the thickness of the nickel layer NL is thinner than the copper (Cu) layer CL, for example, about 3 μm, and the body of the thickness of the columnar electrode PL includes copper (Cu) Layer CL. Thereafter, if necessary, the back side of the semiconductor substrate SB is ground or polished to reduce the thickness of the semiconductor substrate SB, and then the semiconductor substrate SB and the laminated structure on the semiconductor substrate SB are cut (cut) together. At this time, the semiconductor substrate SB and the build-up structure system on the semiconductor substrate SB are cut (diced) along the scribe area by a dicing blade (not shown). With this, the semiconductor wafer is obtained from each wafer area of the semiconductor substrate SB (semiconductor wafer). In this way, the semiconductor wafer CP can be manufactured. <Research progress> In a semiconductor device that flip-chip connects a semiconductor wafer on a wiring substrate, flip-chip connection can be performed by connecting a plurality of solder bumps of the semiconductor wafer to a plurality of terminals of the wiring substrate. However, in recent years, with the increase in the number of terminals of semiconductor wafers and the miniaturization of semiconductor wafers, the interval of solder bumps in semiconductor wafers is constantly narrowing. Therefore, the present inventors are studying to form a plurality of columnar electrodes on a plurality of pads of a semiconductor wafer first, and then connect the plurality of columnar electrodes of the semiconductor wafer to a plurality of terminals of the wiring substrate via solder, thereby carrying out Flip chip connection. By adopting a structure in which the columnar electrode of the semiconductor wafer and the terminal of the wiring substrate are connected by solder, the distance between the semiconductor wafer and the wiring substrate becomes easily larger by using the columnar electrode, so even if the adjacent interval of the columnar electrode varies As the number of terminals of a semiconductor wafer increases and the size of the semiconductor wafer becomes smaller, it is also easy to fill the underfill resin between the semiconductor wafer and the wiring substrate. Also, since the columnar electrodes are used, the amount of solder in each solder connection portion can be suppressed, so even if the adjacent interval of the columnar electrodes becomes smaller with the increase in the number of terminals of the semiconductor wafer and the miniaturization of the semiconductor wafer, it is easy to prevent solder connection The parts are in contact with each other and short-circuited. Therefore, in order to respond to the increase in the number of terminals of the semiconductor wafer and the demand for miniaturization of the semiconductor wafer, it is more preferable to adopt a structure in which the columnar electrode of the semiconductor wafer and the terminal of the wiring substrate are connected by solder. In addition, the semiconductor wafer has a wiring structure (multilayer wiring structure) including a plurality of wiring layers, and a semiconductor integrated circuit is formed by wiring elements formed in the semiconductor wafer by wiring formed in the wiring structure. With the demand for miniaturization of semiconductor wafers, the miniaturization of wiring in semiconductor wafers has also continued to develop, but with this, the distance (spacing) between wirings has also continued to decrease. If the distance between the wiring becomes smaller, there is a concern that the capacitance (parasitic capacitance) between the adjacent wiring becomes larger, and the transmission speed of the signal transmitted in the wiring decreases, resulting in an increase in signal delay and power consumption. Therefore, it is desirable to reduce the capacitance (parasitic capacitance) between wirings by using a low dielectric constant insulating film as the interlayer insulating film constituting the wiring structure. However, although the dielectric constant of the low dielectric constant insulating film is lower than that of the silicon oxide film, the low dielectric constant insulating film has lower strength than the silicon oxide film. The present inventors conducted experiments and simulations to study the reliability of a semiconductor device in a case where a structure in which a columnar electrode of a semiconductor wafer and a terminal of a wiring board are connected by solder is used. As a result, it was found that when a structure in which the columnar electrodes of the semiconductor wafer and the terminals of the wiring substrate are connected by solder is used, optimizing the size of each member, etc. is extremely important for improving the reliability of the manufactured semiconductor device. For example, when the columnar electrode of the semiconductor wafer and the terminal of the wiring board are connected by solder by flip chip connection, stress is easily applied from the columnar electrode PL to the wiring of the semiconductor wafer when the solder is melted and cooled after resolidification Structured interlayer insulating film. Stress applied from the columnar electrode PL to the interlayer insulating film of the wiring structure of the semiconductor wafer may damage the interlayer insulating film and cause deterioration of the interlayer insulating film. In particular, in the case where a low dielectric constant insulating film is used as the interlayer insulating film, if stress is applied from the columnar electrode PL to the low dielectric constant insulating film having a low strength, the low dielectric constant insulating film is likely to be damaged. Damage to the interlayer insulating film of the wiring structure of the semiconductor wafer may cause the reliability of the semiconductor device including the semiconductor wafer to decrease. Therefore, in order to improve the reliability of the semiconductor device, it is desirable to make it difficult to apply stress from the columnar electrode PL to the interlayer insulating film of the wiring structure of the semiconductor wafer. Through experiments and simulations, the inventors have newly discovered that as the main factor affecting the magnitude of the stress applied from the columnar electrode PL to the interlayer insulating film located below the columnar electrode PL, there is the thickness h of the columnar electrode PL 1 , The diameter D of the columnar electrode PL 1 And the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP. And it was found that by optimizing these factors as described below, the magnitude of the stress applied from the columnar electrode PL to the interlayer insulating film located below the columnar electrode PL can be reduced to about half. In this embodiment, when the structure in which the columnar electrodes of the semiconductor wafer and the terminals of the wiring board are connected by solder is used, the reliability of the semiconductor device can be improved by optimizing the size of each member as described below. <About Main Features and Effects> The semiconductor device PKG of this embodiment is a semiconductor device including a wiring substrate CB and a semiconductor wafer CP mounted on the wiring substrate CB. The semiconductor wafer CP includes an interlayer insulating film IL6 (first insulating film), a pad PD formed on the interlayer insulating film IL6, and an opening OP3 formed on the interlayer insulating film IL6 and exposing a part of the pad PD (first The insulating film PA (second insulating film) of the opening) and the columnar electrode PL formed on the pad PD exposed from the opening OP3. The wiring board CB includes a terminal TE and a resist layer SR1 (third insulating film) having an opening OP1 (second opening) exposing a part of the terminal TE. The insulating film PA of the semiconductor wafer CP has an upper surface PA2a as a principal surface (first principal surface) opposite to the wiring substrate CB, and the resist layer SR1 of the wiring substrate CB has a surface opposite to the semiconductor wafer CP The upper surface SR1a of the side main surface (second main surface). In a plan view, the columnar electrode PL contains the opening OP3 (first opening) of the insulating film PA, and a part of the columnar electrode PL overlaps the insulating film PA. Moreover, the columnar electrode PL of the semiconductor wafer CP and the terminal TE of the wiring board CB are connected via the solder layer SD interposed between the columnar electrode PL and the terminal TE. The first feature of this embodiment is the thickness (first thickness, height) h of the columnar electrode PL from the upper surface PA2a of the insulating film PA 1 The thickness of the solder layer SD from the upper surface SR1a of the resist layer SR1 (second thickness, height) h 2 More than one and a half, and the thickness h 2 the following. That is, the first feature is to satisfy h 2 / 2 ≦ h 1 ≦ h 2 Relationship. Furthermore, the thickness h 1 , H 2 It is shown in Fig. 7 and Fig. 17. Satisfy h 2 / 2 ≦ h 1 ≦ h 2 The relationship is equivalent to satisfy h 1 ≦ h 2 ≦ h 1 × 2 relationship. Therefore, the first feature is equivalent to the thickness h of the solder layer SD from the upper surface SR1a of the resist layer SR1 2 The thickness h of the columnar electrode PL from the upper surface PA2a of the insulating film PA 1 More than 1 times and less than 2 times. Thickness h 1 It can also be regarded as the thickness (height) of the columnar electrode PL protruding from the upper surface PA2a of the insulating film PA. Also, the thickness h 1 It can also be regarded as the distance from the upper surface PA2a of the insulating film PA to the front end surface of the columnar electrode PL (the distance when viewed in the thickness direction of the semiconductor wafer CP). Also, the thickness h 1 It can also be regarded as the thickness of the columnar electrode PL on the portion on the upper surface PA2a of the insulating film PA (that is, the portion riding on the upper surface PA2a of the insulating film PA). Anyway, h 1 It is the size when viewed in the thickness direction of the semiconductor wafer CP. Also, the thickness h 2 It can also be regarded as the thickness (height) of the solder layer SD at the portion protruding from the upper surface SR1a of the resist layer SR1. Also, the thickness h 2 It can also be regarded as the distance (the distance when viewed in the thickness direction of the wiring board CB) from the upper surface SR1a of the resist layer SR1 to the upper surface of the solder layer SD (ie, from the interface between the solder layer SD and the columnar electrode PL). Anyway, h 2 It is the dimension when viewed in the thickness direction of the wiring board CB. When viewed in the thickness direction of the wiring substrate CB, the distance (space) between the upper surface PA2a of the insulating film PA of the semiconductor wafer CP and the upper surface SR1a of the resist layer SR1 of the wiring substrate CB corresponds to the thickness h of the columnar electrode PL 1 Thickness h with solder layer SD 2 Total (i.e. h 1 ＋ h 2 ). Below, it is more desirable to satisfy the first feature (h 2 / 2 ≦ h 1 ≦ h 2 ) To explain the reason. The structure in which the columnar electrode PL is provided on the pad PD and the columnar electrode PL of the semiconductor wafer CP and the terminal TE of the wiring board CB are connected by the solder layer SD has the advantage that the semiconductor wafer CP is used by the columnar electrode PL The distance from the wiring substrate CB becomes larger; and the use of the columnar electrode PL suppresses the amount of solder in the solder connection portion. From this viewpoint, the thickness h of the columnar electrode PL is desired to some extent 1 Larger, if the thickness of the columnar electrode PL h 1 If it is smaller, the meaning of using the columnar electrode PL becomes smaller. From this viewpoint, the thickness h of the columnar electrode PL 1 Preferably the thickness h of the solder layer SD 2 More than half (i.e. h 2 / 2 ≦ h 1 ). By making h 2 / 2 ≦ h 1 This is true, and the above advantages obtained by using the columnar electrode PL can be truly enjoyed. This makes it easy to fill the underfill resin (resin part) between the semiconductor wafer CP and the wiring substrate CB even if the adjacent interval of the columnar electrode PL becomes smaller as the number of terminals of the semiconductor wafer CP increases and the semiconductor wafer CP becomes smaller. UFR). Also, because the thickness h of the columnar electrode PL is secured 1 And, the solder amount of each solder connection portion (here, the solder layer SD) can be suppressed, so even if the adjacent interval of the columnar electrodes PL becomes small, it is easy to prevent the solder connection portions from contacting each other and short-circuiting. Therefore, the semiconductor wafer CP can be miniaturized and multi-terminal. On the other hand, if the thickness h of the columnar electrode PL is 1 If it is too large, the following problems will occur. The stress applied to the columnar electrode PL is relieved by the insulating film PA (especially the resin film PA2) existing under the columnar electrode PL. However, if the thickness h of the columnar electrode PL 1 When it becomes larger, the stress applied to the columnar electrode PL becomes larger, and it becomes impossible to sufficiently relax the stress by the insulating film PA (especially the resin film PA2), and the stress is transmitted from the columnar electrode PL to the position below the columnar electrode PL Interlayer insulating films (IL1-IL6), so that stress is applied to the interlayer insulating films (IL1-IL6). Stress is applied from the columnar electrode PL to the interlayer insulating film located below the columnar electrode PL, which may cause damage to the interlayer insulating film, thereby reducing the reliability of the semiconductor device PKG. According to the experiments and simulations of the inventor, the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL depends on the thickness h of the columnar electrode PL 1 In order to reduce the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL, it is more effective to make the thickness of the columnar electrode PL h 1 Become smaller. From this viewpoint, the thickness h of the columnar electrode PL 1 Preferably the thickness h of the solder layer SD 2 The following (i.e. h 1 ≦ h 2 ). By making h 1 ≦ h 2 When it is established, the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL can be reduced, so that it can be suppressed or prevented from being located in the columnar shape due to the stress from the columnar electrode PL The interlayer insulating film under the electrode PL is damaged, thereby improving the reliability of the semiconductor device. Therefore, as the first feature, it is desirable to satisfy h 2 / 2 ≦ h 1 ≦ h 2 Relationship. Thereby, the above-mentioned advantages obtained by using the columnar electrode PL can be certainly enjoyed, and the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) located below the columnar electrode PL can be reliably reduced. Thereby, the reliability of the semiconductor device can be improved. In addition, the adjacent interval between the columnar electrodes PL can be reduced, so that the semiconductor wafer CP can be miniaturized and multi-terminal. Fig. 37 shows the correlation between the thickness of the columnar electrode (horizontal axis in Fig. 37) and the stress applied from the columnar electrode to the interlayer insulating film below the columnar electrode (vertical axis in Fig. 37) by simulation A graph of the results. The horizontal axis of FIG. 37 is the thickness of the columnar electrode, which corresponds to the above thickness h 1 . According to the graph of FIG. 37, it can also be seen that by making the thickness of the columnar electrode (h 1 ) Becomes smaller, so that the stress applied from the columnar electrode to the interlayer insulating film below the columnar electrode can be reduced. The thickness h of the columnar electrode PL 1 It is preferably about 15 to 25 μm. Therefore, for example, it is preferable to adjust the thickness h of the columnar electrode PL 1 Set to 20 μm and set the thickness h of the solder layer SD 2 Set to a combination of 30 μm. The second feature of this embodiment is the thickness h of the columnar electrode PL 1 Thickness h with solder layer SD 2 Total (i.e. h 1 ＋ h 2 ) Is the diameter D of the columnar electrode PL 1 0.5 times or more and 0.8 times or less. That is, the second feature is to satisfy D 1 × 0.5 ≦ h 1 ＋ h 2 ≦ D 1 × 0.8 relationship. Diameter D 1 This is shown in Figs. 20 and 21. The diameter D of the columnar electrode PL 1 The diameter of the opening OP4 of the photoresist layer RP1 is substantially the same. Furthermore, satisfy D 1 × 0.5 ≦ h 1 ＋ h 2 ≦ D 1 The relationship of × 0.8 is equivalent to 0.5 ≦ (h 1 ＋ h 2 ) / D 1 ≦ 0.8 relationship. The reason why it is more desirable to satisfy the second feature will be described below. When the diameter D of the columnar electrode PL 1 Make it smaller (h 1 ＋ h 2 ) / D 1 When it becomes larger, the stress acting in the direction in which the columnar electrode PL falls down becomes larger. If the stress acting in the direction in which the columnar electrode PL falls is increased, the stress is easily applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) located below the columnar electrode PL, which is not preferable. In order to reduce the stress applied from the columnar electrode PL to the interlayer insulating film below the columnar electrode PL, it is more effective to make the diameter D of the columnar electrode PL 1 Get bigger. From this point of view, (h 1 ＋ h 2 ) / D 1 It is preferably 0.8 or less. On the other hand, if the diameter D of the columnar electrode PL 1 Becomes larger (h 1 ＋ h 2 ) / D 1 If it becomes smaller, the volume of the underfill resin (resin portion UFR) filled between the semiconductor wafer CP and the wiring substrate CB will decrease, and the protective effect by the underfill resin will decrease. Also, the diameter D of the columnar electrode PL 1 Becomes larger (h 1 ＋ h 2 ) / D 1 The smaller size will increase the arrangement pitch of the columnar electrodes PL, which is disadvantageous for miniaturization and multi-terminalization of semiconductor wafers. Therefore, the diameter D of the columnar electrode PL is too much 1 Becomes larger (h 1 ＋ h 2 ) / D 1 Being smaller is also not good. From this point of view, (h 1 ＋ h 2 ) / D 1 It is preferably 0.5 or more. Therefore, as a second feature, the thickness h of the columnar electrode PL 1 Thickness h with solder layer SD 2 The total sum is preferably the diameter D of the columnar electrode PL 1 0.5 times or more and 0.8 times or less (ie D 1 × 0.5 ≦ h 1 ＋ h 2 ≦ D 1 × 0.8). Thereby, the stress in the direction of the falling of the columnar electrode PL can be suppressed, so that the stress is not easily applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) located below the columnar electrode PL, and the semiconductor device reliability. In addition, the volume of the underfill resin (resin portion UFR) filled between the semiconductor wafer CP and the wiring substrate CB is easily ensured, so that the protection effect by the underfill resin can be surely obtained. In addition, the arrangement pitch of the columnar electrodes PL is easily reduced, which is advantageous for miniaturization and multi-terminalization of semiconductor wafers. Fig. 38 shows the correlation between the diameter of the columnar electrode (horizontal axis of Fig. 38) and the stress applied from the columnar electrode to the interlayer insulating film below the columnar electrode (vertical axis of Fig. 38) by simulation A graph of the results. The horizontal axis of FIG. 38 is the diameter of the columnar electrode, which corresponds to the above-mentioned diameter D 1 . According to the graph of FIG. 38, it can also be seen that by making the diameter of the columnar electrode (D 1 ) Becomes larger, so that the stress applied from the columnar electrode to the interlayer insulating film below the columnar electrode becomes smaller. The diameter D of the columnar electrode PL 1 It is preferably about 85 to 105 μm. The third feature of this embodiment is the diameter D of the opening OP3 of the insulating film PA 2 Is the diameter D of the columnar electrode PL 1 0.4 times or more and 0.75 times or less. That is, the third characteristic is to satisfy D 1 × 0.4 ≦ D 2 ≦ D 1 × 0.75 relationship. Diameter D 1 , D 2 This is shown in Figs. 20 and 21. Furthermore, since the opening OP3 of the insulating film PA includes the opening OP3b of the resin film PA2, the diameter D of the opening OP3 of the insulating film PA 2 The diameter of the opening OP3b of the resin film PA2 is the same. In the following, the reason why it is more desirable to satisfy the third characteristic will be described. If the diameter D of the opening OP3 of the insulating film PA 2 When it becomes smaller, the diameter of the columnar electrode PL embedded in the opening OP3 of the insulating film PA also becomes smaller, and the current density in the columnar electrode PL embedded in the opening OP3 of the insulating film PA becomes higher. If the current density in the columnar electrode PL embedded in the opening OP3 of the insulating film PA becomes higher, deterioration of the columnar electrode PL (for example, degradation due to electromigration) may occur, causing EM (ElectroMigration, electrical (Migration) There is a risk of a decrease in life, etc., so it is not good. In order to suppress the deterioration of the columnar electrode PL, it is more effective to make the diameter D of the opening OP3 of the insulating film PA 2 Get bigger. From this viewpoint, the diameter D of the opening OP3 of the insulating film PA 2 Preferably, the diameter D of the columnar electrode PL 1 0.4 times or more (i.e. D 1 × 0.4 ≦ D 2 ). In addition, the insulating film PA (especially the resin film PA2) has a function as a buffer layer (stress buffer layer, stress relaxation layer), and the stress applied to the columnar electrode PL is caused by the insulating film PA (especially resin film) as the buffer layer PA2). However, if the diameter D of the opening OP3 of the insulating film PA 2 When it becomes larger, the function of the insulating film PA (particularly the resin film PA2) as a buffer layer becomes smaller, and the effect of easing the stress applied to the columnar electrode PL by the insulating film PA (particularly the resin film PA2) is reduced, so the stress is easy The columnar electrode PL is applied to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL. Therefore, as a countermeasure against electromigration, in order to reduce the current density flowing through the columnar electrode PL, the diameter D of the opening OP3 of the insulating film PA connecting the columnar electrode PL to the pad PD 2 If it becomes too large, the function of the insulating film PA (particularly the resin film PA2) as a buffer layer becomes small, and the stress applied from the columnar electrode PL to the interlayer insulating film becomes large, which may cause damage to the interlayer insulating film. Therefore, it is not appropriate to make the diameter D of the opening OP3 of the insulating film PA 2 Becomes too large. In order to reduce the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL, it is more effective to make the diameter D of the opening OP3 of the insulating film PA 2 Become smaller. From this viewpoint, the diameter D of the opening OP3 of the insulating film PA 2 Preferably, the diameter D of the columnar electrode PL 1 Less than 0.75 times (i.e. D 2 ≦ D 1 × 0.75). Therefore, as the third feature, the diameter D of the opening OP3 of the insulating film PA is preferably 2 Is the diameter D of the columnar electrode PL 1 0.4 times or more and 0.75 times or less (ie, D 1 × 0.4 ≦ D 2 ≦ D 1 × 0.75). By this, the current density in the columnar electrode PL embedded in the portion of the opening OP3 of the insulating film PA can be suppressed, so that the degradation of the columnar electrode PL (eg, degradation due to electromigration) can be suppressed, and the EM life can be improved Wait. Moreover, it is easy to ensure that the insulating film PA (particularly the resin film PA2) functions as a buffer layer, so that the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL can be reduced. Therefore, the reliability of the semiconductor device can be improved. The fourth feature of this embodiment is that the insulating film PA has a laminated structure of an insulating film PA1 including an inorganic insulating film and a resin film PA2 on the insulating film PA1, and the opening OP3a (third opening) of the insulating film PA1 in a plan view Part) contains the opening OP3b (fourth opening) of the resin film PA2, and the opening OP3 of the insulating film PA is formed by the opening OP3b of the resin film PA2. The reason why it is more desirable to satisfy the fourth characteristic will be described below. If the insulating film PA has a laminated structure of the insulating film PA1 and the resin film PA2 on the insulating film PA1, and the opening OP3a of the insulating film PA1 contains the opening OP3b of the resin film PA2 in the plan view, the opening of the insulating film PA The inner wall of OP3 includes the inner wall of the opening OP3b of the resin film PA2. Therefore, although the columnar electrode PL is in contact with the resin film PA2, it is not in contact with the insulating film PA1. Since the resin film PA2 contains a resin material, it is relatively soft and has an excellent function as a buffer layer (stress buffer layer, stress relief layer) that relaxes the stress applied to the columnar electrode PL. Therefore, by contacting the columnar electrode PL with the resin film PA2, but not with the insulating film PA1, the resin film PA2 can be used to ease the stress applied to the columnar electrode PL, thereby making the self-column electrode PL The stress applied to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL becomes small. This can suppress or prevent damage to the interlayer insulating film located below the columnar electrode PL due to stress from the columnar electrode PL. Therefore, it is desirable to satisfy the fourth feature, whereby the reliability of the semiconductor device can be improved. For example, it is preferable to set the diameter of the opening OP3a to about 55 μm and the diameter of the opening OP3b to about 40 μm. In addition, of the resin film PA2 on the insulating film PA1, the main resin film PA2 that functions as a buffer layer for easing the stress applied to the columnar electrode PL is a resin layer containing a resin material in order to enhance the function as a buffer layer The insulating film (that is, the resin film PA2) serves as the uppermost film of the semiconductor wafer CP. In consideration of this function of the resin film PA2 (function as a buffer layer), the resin film PA2 is particularly preferably a polyimide resin film. By this, the stress applied to the columnar electrode PL can be more surely relieved by the resin film PA2, thereby more surely reducing the interlayer insulating films (IL1 to IL6) applied from the columnar electrode PL to the column electrode PL below stress. In addition, the insulating film PA1 can reliably function as a passivation film by including an inorganic insulating film. In addition, the insulating film PA1 preferably includes a silicon nitride film or a silicon oxynitride film, thereby improving the moisture resistance of the semiconductor chip CP, and further improving the reliability of the semiconductor device. The fifth feature of this embodiment is the thickness (third thickness) T of the resin film PA2 between the pad PD and the columnar electrode PL 1 Greater than the thickness of the pad PD (4th thickness) T 2 , And less than the thickness h of the columnar electrode PL 1 . That is, the fifth characteristic is to satisfy T 2 ＜ T 1 ＜ h 1 Relationship. Thickness T 1 , T 2 Shown in Figures 7 and 20. Here, the thickness T 1 It is interposed between the upper surface of the pad PD (the upper surface of the pad PD that is not covered by the insulating film PA1) and the columnar electrode PL (the columnar electrode PL that rides up to the portion of the resin film PA2) The thickness of the resin film PA2. In other words, the thickness T 1 It corresponds to the thickness of the resin film PA2 in the area inside the opening OP3a and outside the opening OP3b in a plan view. Furthermore, the thickness T 1 , T 2 It is the size when viewed in the thickness direction of the semiconductor wafer CP. The reason why it is more desirable to satisfy the fifth feature will be described below. If the thickness of the resin film PA2 (T 1 ) Becomes thinner, the function of the resin film PA2 as a buffer layer becomes lower, and the effect of easing the stress applied to the columnar electrode PL by the resin film PA2 is reduced, so the stress is easily applied from the columnar electrode PL to the column electrode PL Interlayer insulating film (IL1 ~ IL6). Therefore, the thickness of the resin film PA2 (T 1 ) Too thin. In order to reduce the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL, it is more effective to make the thickness of the resin film PA2 (T 1 ) Thickens. From this viewpoint, the thickness T of the resin film PA2 1 Preferably greater than (thicker) the thickness T of the pad PD 2 (I.e. T 2 ＜ T 1 ). On the other hand, if the thickness of the resin film PA2 (T 1 ) If the thickness is too thick, the semiconductor wafer CP is likely to warp due to the difference between the thermal shrinkage of the resin film PA2 and the interlayer insulating films (IL1 to IL6) constituting the wiring structure. Therefore, the thickness of the resin film PA2 (T 1 ) Too thick. From this viewpoint, the thickness T of the resin film PA2 1 It is preferably smaller than the thickness h of the columnar electrode PL 1 (I.e. T 1 ＜ h 1 ). Therefore, as the fifth feature, the thickness T of the resin film PA2 is preferably 1 Greater than the thickness T of the pad PD 2 , And less than the thickness h of the columnar electrode PL 1 (I.e. T 2 ＜ T 1 ＜ h 1 ). Thereby, the function of the resin film PA2 as a buffer layer can be easily ensured, and the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL can be reduced. With this, it is possible to suppress or prevent the stress from the columnar electrode PL from causing damage to the interlayer insulating film located below the columnar electrode PL. In addition, it is easy to suppress or prevent the difference in the thermal shrinkage rate between the resin film PA2 and the interlayer insulating films (IL1 to IL6), which causes the semiconductor wafer CP to warp unnecessarily. Therefore, the reliability of the semiconductor device can be improved. The sixth feature of the present embodiment is that, in plan view, the diameter D of the opening OP1 of the resist layer SR1 3 Less than the diameter D of the columnar electrode PL 1 (See Fig. 39). That is, the sixth feature is to satisfy D 3 ＜ D 1 Relationship. Diameter D 3 This is shown in Figs. 11 and 39 described above. From another perspective, the sixth feature is that the opening OP1 of the resist layer SR1 is contained in the columnar electrode PL in a plan view. Here, FIG. 39 is a plan view of the main parts of the semiconductor device PKG. In FIG. 39, a plan layout of the terminals of the wiring board CB, the opening OP1 of the resist layer SR1, and the columnar electrode PL in the semiconductor device PKG is shown. The reason why it is more desirable to satisfy the sixth feature will be described below. If the diameter D of the opening OP1 of the resist layer SR1 is viewed from above 3 Greater than the diameter D of the columnar electrode PL 1 Then, a part of the solder layer SD1 will wet and diffuse to the side of the columnar electrode PL. If a part of the solder layer SD1 wets and diffuses to the side surface of the columnar electrode PL, it is difficult to fill the underfill resin (resin portion UFR) between the semiconductor wafer CP and the wiring substrate CB, which is not preferable. In addition, if a part of the solder layer SD1 is wetted and diffused to the side surface of the columnar electrode PL, the risk of short circuit between adjacent columnar electrodes PL increases, which is not good. Moreover, if a part of the solder layer SD1 is wetted and diffused to the side of the columnar electrode PL, the thickness h of the solder layer SD is correspondingly 2 It becomes smaller, and the interval between the semiconductor wafer CP and the wiring substrate CB becomes narrower, which is not preferable. Therefore, as a sixth feature, the diameter D of the opening OP1 of the resist layer SR1 in a plan view is more preferable 3 Less than the diameter D of the columnar electrode PL 1 . From another perspective, it is more preferable that the opening OP1 of the resist layer SR1 is contained in the columnar electrode PL in a plan view. As a result, the shape of the solder layer SD connecting the columnar electrode PL and the terminal TE is as shown in FIG. 7 described above, and the solder constituting the solder layer SD1 is not easily wetted and diffused to the side of the columnar electrode PL. Therefore, it is easy to fill the underfill resin (resin portion UFR) between the semiconductor wafer CP and the wiring substrate CB, and it is easy to manufacture the semiconductor device PKG. In addition, the risk of short-circuiting between adjacent columnar electrodes PL can be reduced, so the reliability of the semiconductor device can be improved. For example, it is preferable to set the diameter D of the columnar electrode PL 1 It is set to about 85 to 105 μm, and the diameter D of the opening OP1 of the agent layer SR1 3 Set to a combination of approximately 65 to 75 μm. Moreover, the arrangement pitch of the columnar electrodes PL in the semiconductor wafer CP is preferably larger than the diameter D of the columnar electrodes PL 1 Add the value of 15 μm (D 1 ＋15 μm). That is, it is preferable to ensure that the closest distance (the interval between the closest parts) of the columnar electrodes PL adjacent to each other in plan view is 15 μm or more. This makes it easy to fill the underfill resin (resin portion UFR) between the semiconductor wafer CP and the wiring board CB. To give an example, the diameter D of the columnar electrode PL can be 1 It is set to about 85 to 105 μm, and the arrangement pitch of the columnar electrodes PL is set to about 130 μm. The sixth feature is further supplemented. As described above, as a sixth feature, if the diameter D of the opening OP1 of the resist layer SR1 is viewed from above 3 Less than the diameter D of the columnar electrode PL 1 (D 3 ＜ D 1 ), But the diameter D of the opening OP1 of the resist layer SR1 3 Is the diameter D of the columnar electrode PL 1 0.7 times or more and 0.8 times or less (D 1 × 0.7 ≦ D 3 ≦ D 1 × 0.8) is particularly preferred. The reason will be described below. As described above, as a sixth feature, the diameter D of the opening OP1 of the resist layer SR1 in a plan view 3 Less than the diameter D of the columnar electrode PL 1 (D 3 ＜ D 1 ), From another perspective, the opening OP1 of the resist layer SR1 is contained in the columnar electrode PL in a plan view. Accordingly, the solder constituting the solder layer SD1 is not easily wetted and diffused to the side surface of the columnar electrode PL. However, in order to reliably prevent the solder constituting the solder layer SD1 from wetting and spreading to the side surface of the columnar electrode PL, it is preferable not only to make the diameter D of the opening OP1 of the resist layer SR1 not only in a plan view 3 Less than the diameter D of the columnar electrode PL 1 , And then the diameter D of the opening OP1 of the resist layer SR1 3 Set the diameter D of the columnar electrode PL 1 Less than 0.8 times (i.e. D 3 ≦ D 1 × 0.8). If the diameter D of the opening OP1 of the resist layer SR1 3 Set the diameter D of the columnar electrode PL 1 Less than 0.8 times (D 3 ≦ D 1 × 0.8), it is possible to more reliably prevent the solder constituting the solder layer SD1 from being wet and diffused to the side surface of the columnar electrode PL. On the other hand, if the diameter D of the opening OP1 of the resist layer SR1 3 The smaller the diameter of the solder layer SD embedded in the opening OP1 of the resist layer SR1, the higher the current density in the solder layer SD embedded in the opening OP1 of the resist layer SR1. If the current density in the solder layer SD embedded in the opening OP1 of the resist layer SR1 becomes higher, deterioration of the solder layer SD (for example, deterioration due to electromigration) is likely to occur, and the EM life may be reduced. Therefore it is not good. In order to suppress or prevent the deterioration of the solder layer SD caused by the increase in current density, it is more effective not to make the diameter D of the opening OP1 of the resist layer SR1 3 Becomes too small. Moreover, if the diameter D of the opening OP1 of the resist layer SR1 3 Relative to the diameter D of the columnar electrode PL 1 Ratio (ie D 3 / D 1 ) Becomes smaller, at the position where the corner formed by the upper surface SR1a of the resist layer SR1 and the inner wall (side wall) of the opening OP1 of the resist layer SR1 meets, a constricted portion of the solder layer SD is formed. The shrinkage part starts from the increased risk of cracks in the solder layer SD. In order to suppress or prevent cracking of the solder layer SD, it is more effective not to make the diameter D of the opening OP1 of the resist layer SR1 3 Relative to the diameter D of the columnar electrode PL 1 Ratio (ie D 3 / D 1 ) Becomes too small. That is, in order to suppress or prevent the deterioration and cracking of the solder layer SD, it is more effective not to make the diameter D of the opening OP1 of the resist layer SR1 3 Becomes too small. Therefore, as a sixth feature, it is particularly preferable that the opening OP1 of the resist layer SR1 is contained in the columnar electrode PL (diameter D of the opening OP1 in plan view) 3 Less than the diameter D of the columnar electrode PL 1 ), But the diameter D of the opening OP1 of the resist layer SR1 3 Set the diameter D of the columnar electrode PL 1 0.7 times to 0.8 times (i.e. D 1 × 0.7 ≦ D 3 ≦ D 1 × 0.8). That is, it is particularly preferable to adjust the diameter D of the opening OP1 of the resist layer SR1 3 Relative to the diameter D of the columnar electrode PL 1 Ratio (D 3 / D 1 ) Is set to 0.7 or more and 0.8 or less (that is, 0.7 ≦ D 3 / D 1 ≦ 0.8). With this, the solder constituting the solder layer SD1 can be reliably prevented from being wet and diffused to the side surface of the columnar electrode PL, and the deterioration and cracking of the solder layer SD can be suppressed or prevented, thereby improving the reliability of the semiconductor device more reliably. In addition, in FIG. 39, the case where the planar shape of the terminal TE is a quadrangle (rectangle) is shown as an example, but it is not limited to this, and the planar shape of the terminal TE may be a circle or the like. The seventh feature of this embodiment is that the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP is 25 to 300 μm. The reason why it is more desirable to satisfy the seventh feature will be described below. If the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP is thick, the semiconductor wafer CP is not easily deformed. On the other hand, if the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP is made thin, the semiconductor wafer CP is easily deformed, and the deformation of the semiconductor wafer CP can ease the application to the interlayer insulating film constituting the wiring structure of the semiconductor wafer CP ( IL1 ~ IL6) stress. Therefore, the effect of thinning the thickness of the semiconductor substrate SB is to reduce the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL. From this viewpoint, it is preferable to make the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP thin to a certain extent, and set it to 300 μm or less. On the other hand, if the thickness of the semiconductor substrate SB is too thin, the risk of cracking of the semiconductor substrate SB increases, so the thickness of the semiconductor substrate SB is preferably 25 μm or more. Therefore, as a seventh feature, the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP is preferably in the range of 25 to 300 μm. By this, the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL can be relaxed by the deformation of the semiconductor wafer CP, and the semiconductor substrate SB can be reliably prevented from cracking. Therefore, the reliability of the semiconductor device can be improved, and the semiconductor device can be easily manufactured. In addition, the manufacturing yield of semiconductor devices can be improved. FIG. 40 shows the analysis of the thickness of the semiconductor substrate constituting the semiconductor wafer (the horizontal axis of FIG. 40) and the stress applied from the columnar electrode to the interlayer insulating film below the columnar electrode (the vertical axis of FIG. 40) by simulation A graph of the results of the correlation. According to the graph of FIG. 40, it can also be seen that by reducing the thickness of the semiconductor substrate constituting the semiconductor wafer, the stress applied from the columnar electrode to the interlayer insulating film below the columnar electrode can be reduced. Therefore, the thickness of the semiconductor substrate SB constituting the semiconductor wafer CP is preferably 300 μm or less. An eighth feature of the present embodiment is that the planar shape of the opening OP3 of the insulating film PA (the opening OP3b of the resin film PA2) is circular (see FIG. 21). Furthermore, it is more preferable if the planar shape of the columnar electrode PL is circular. In the following, the reason why it is more desirable to satisfy the eighth feature will be described. The planar shape of the opening OP3 of the insulating film PA (the opening OP3b of the resin film PA2) can be applied to various planar shapes such as a rectangular shape (rectangular shape), a polygonal shape other than a rectangular shape, or a circular shape. . By setting the planar shape of the opening OP3 of the insulating film PA (the opening OP3b of the resin film PA2) to be a circular shape, the column embedded in the portion of the opening OP3 of the insulating film PA (the opening OP3b of the resin film PA2) The electrode PL has a cylindrical shape. As a result, the columnar electrode PL is less likely to generate anisotropic stress, and it is possible to prevent the phenomenon that the stress is concentrated at the corner of the columnar electrode PL. By making the planar shape of the columnar electrode PL a circular shape, this effect is further increased. With this, the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL can be reduced. Therefore, it is possible to suppress or prevent the stress from the columnar electrode PL from causing damage to the interlayer insulating film located below the columnar electrode PL. Therefore, the reliability of the semiconductor device can be improved. In addition, the semiconductor wafer CP has a wiring structure including a plurality of wiring layers. If this embodiment is applied to the case where the wiring structure of the semiconductor wafer CP includes a low dielectric constant insulating film, the effect is greater. The reason is as follows. As described above, in recent years, the interval of wiring within a semiconductor wafer has become smaller and smaller, and therefore the parasitic capacitance between adjacent wirings has increased, which may cause signal delay and increased power consumption. Therefore, it is desirable to reduce the parasitic capacitance between adjacent wirings by using a low dielectric constant insulating film as the interlayer insulating film constituting the wiring structure of the semiconductor wafer, thereby improving the performance of the semiconductor device. However, although the low dielectric constant insulating film has a lower dielectric constant than the silicon oxide film, the low dielectric constant insulating film tends to be weaker than the silicon oxide film. Therefore, when a low dielectric constant insulating film is used as the interlayer insulating film included in the wiring structure, when stress is applied from the columnar electrode PL to the interlayer insulating film below the columnar electrode PL, the interlayer insulating film is damaged The risk becomes higher. That is, the low dielectric constant insulating film can be said to have a low resistance to stress from the columnar electrode PL. In response to this, in the present embodiment, the stress applied from the columnar electrode PL to the interlayer insulating films (IL1 to IL6) below the columnar electrode PL is reduced by the above features (first to eighth features). Therefore, even when a low-dielectric-constant insulating film having a low resistance to stress is used as the interlayer insulating film included in the wiring structure, the stress from the columnar electrode PL can be suppressed or prevented from including low dielectric The interlayer insulating film of the constant insulating film is damaged. Therefore, if this embodiment is applied to the case where the wiring structure of the semiconductor wafer CP includes a low-dielectric-constant insulating film, the effect of reducing the parasitic capacitance between close wirings in the semiconductor wafer CP can be obtained, and the low The dielectric constant insulating film is damaged due to the stress from the columnar electrode PL. Therefore, the performance of the semiconductor device is improved, and the reliability of the semiconductor device can be improved. This also applies to the ninth feature and the tenth feature described below. Next, a first modification of this embodiment will be described. FIGS. 41 and 42 are a cross-sectional view (FIG. 41) and a top view (FIG. 42) of the main part of the semiconductor device PKG of the first modification of the present embodiment. FIG. 41 shows a cross-sectional view (partially enlarged cross-sectional view) of an area corresponding to FIG. 7 above, and FIG. 42 shows a top view corresponding to FIG. 21 above. In addition, the cross-sectional view at the position of the A6-A6 line of FIG. 41 and FIG. 42 roughly corresponds. 43 is an explanatory diagram for explaining the effect of the semiconductor device of the first modification, and shows a cross-sectional view of a region corresponding to FIG. 7 described above. Furthermore, the semiconductor device of the first modification shown in FIGS. 41 and 42 differs from the semiconductor device of FIG. 7 described above in that it has a ninth feature. That is, the ninth feature is that the pad PD and the columnar electrode PL formed on the pad PD include the columnar electrode PL in the pad PD in a plan view. That is, in plan view, the columnar electrode PL is contained in the pad PD and does not protrude from the pad PD. From another perspective, the ninth feature is that, when viewed from above, the side (outer periphery) PDS of the pad PD of the semiconductor wafer CP is located at the same position as the side PLS of the columnar electrode PL, or is located on the side of the columnar electrode PL PLS is more lateral. Here, the side away from the opening OP3 of the insulating film PA in plan view is set to the outside, and the side close to the opening OP3 of the insulating film PA is set to the inside. Furthermore, the side surface PLS of the columnar electrode PL is the side surface of the columnar electrode PL on the portion on the upper surface PA2a of the insulating film PA (that is, the portion riding on the upper surface PA2a of the insulating film PA). The side surface PLS of the columnar electrode PL overlaps the insulating film PA2 in plan view and is in contact with the resin portion UFR. That is, the side surface PLS of the columnar electrode PL is the side surface in contact with the resin portion UFR. The effect of the ninth feature will be described below while comparing FIGS. 41 and 43. When forming an insulating film, if there is a step difference in the substrate of the insulating film, there may be a step difference reflecting the step difference of the substrate in the insulating film. The insulating film PA is formed in such a manner that a part (central part) of the upper surface of the pad PD is exposed from the opening OP3 and covers the outer periphery and side surfaces of the upper surface of the pad PD. Therefore, there is a case where the step DS due to the side surface PDS of the pad PD is formed on the upper surface PA2a of the insulating film PA. In each of FIGS. 41 and 43, there is shown a case where the step DS due to the side surface PDS of the pad PD is formed on the upper surface PA2a of the insulating film PA. Furthermore, comparing the situation of FIG. 41 with the situation of FIG. 43, the plane size (plane area) of the pad PD is larger than the situation of FIG. 43. In the case of FIG. 41, the plan view The side surface PDS of the pad PD does not overlap with the columnar electrode PL, but in the case of FIG. 43, the side surface PDS of the pad PD overlaps with the columnar electrode PL in a plan view. In the case of FIG. 43, a step DS due to the side surface PDS of the pad PD is formed on the upper surface PA2a of the insulating film PA, and the columnar electrode PL also exists on the step DS. That is, in the case of FIG. 43, on the upper surface PA2a of the insulating film PA, the columnar electrode PL exists even in a region outside the step DS. In this case (FIG. 43), the lower surface PLK of the columnar electrode PL that is in contact with the insulating film PA is not flat, and has a shape that reflects the step DS. Specifically, the lower surface PLK of the columnar electrode PL has a shape in which a region near the end of the lower surface PLK protrudes (protrudes) toward the semiconductor wafer CP side. In addition, the surface of the columnar electrode PL that is in contact with the upper surface PA2a of the insulating film PA is denoted by the symbol PLK and is set as the lower surface PLK of the columnar electrode PL. In the case where the lower surface PLK of the columnar electrode PL has a shape as shown in FIG. 43, when the temperature is circulated (when the high temperature state and the low temperature state are alternately repeated), the area near the end of the lower surface PLK of the columnar electrode PL is pressed and insulated The film PA, which causes stress to be applied to the pad PD or the interlayer insulating film of the semiconductor wafer CP, is likely to cause deformation of the pad PD or damage to the interlayer insulating film. In order to suppress the deformation of the pad PD and the damage of the interlayer insulating film caused by the stress from the columnar electrode PL, it is more effective to make the lower surface PLK of the columnar electrode PL connected to the insulating film PA all the way to the end of the lower surface PLK Both sides are flat. For this reason, even if the step DS of the insulating film PA is generated, the shape of the lower surface PLK of the columnar electrode PL is not affected by the step DS. This can be done by designing the pad PD and the columnar electrode PL in such a way that the columnar electrode PL does not exist on the step DS of the insulating film PA, and the side surface PLS of the columnar electrode PL is located more inside than the step DS in plan view And realized. The step DS of the insulating film PA is generated due to the side PDS of the pad PD. Observe the planar positional relationship between the step DS of the insulating film PA and the side PDS of the pad PD. The step DS of the insulating film PA must be located closer to the solder The side PDS of the pad PD is further outside. In addition, as described above, the side away from the opening OP3 of the insulating film PA is the outer side in plan view, and the side closer to the opening OP3 of the insulating film PA is the inner side. Therefore, if the columnar electrode PL is contained in the pad PD in a plan view, and the columnar electrode PL does not protrude from the pad PD, then the side surface PLS of the columnar electrode PL in a plan view is necessarily located on the insulating film PA The step DS is further inside, and therefore, the columnar electrode PL does not exist on the step DS of the insulating film PA. Thereby, as shown in FIG. 41, even if the step DS of the insulating film PA is generated, the lower surface PLK of the columnar electrode PL that is in contact with the insulating film PA can be flat to the end side of the lower surface PLK. That is, in the case where the above-mentioned ninth feature is satisfied, even if the step DS caused by the side surface PDS of the pad PD is generated on the insulating film PA, the step DS does not cause the shape of the surface PLK below the columnar electrode PL As a result, the lower surface PLK of the columnar electrode PL that is in contact with the insulating film PA can be flat to the end side of the lower surface PLK (see FIG. 41). Compared with the case of FIG. 43, in the case of FIG. 41, since the lower surface PLK of the columnar electrode PL is flat, when temperature is cycled, the application of the lower surface PLK of the columnar electrode PL to the semiconductor wafer CP can be eased The stress of the pad PD or the interlayer insulating film can suppress the deformation of the pad PD or the damage of the interlayer insulating film. Therefore, by satisfying the ninth feature, it is possible to suppress or prevent deformation of the pad PD and damage to the interlayer insulating film caused by stress from the columnar electrode PL when the temperature is cycled. Thereby, the reliability of the semiconductor device can be improved. The ninth feature may be combined with one or more of the aforementioned first to eighth features. Next, a second modification of this embodiment will be described. FIG. 44 is a plan view of the main part of the semiconductor device PKG of the second modification of this embodiment, and corresponds to FIG. 39 described above. FIG. 44 shows a planar layout of the terminal of the wiring board CB, the opening OP1 of the resist layer SR1, and the columnar electrode PL in the semiconductor device PKG of the second modification. The cross-sectional view of the semiconductor device PKG of the second modification is basically the same as the above-mentioned FIGS. 6 and 7. The semiconductor device of the second modification shown in FIG. 44 has the tenth feature. The 10th characteristic is: 1.5 ≦ D 4 / D 3 ≦ 2 established. Here, as mentioned above, D 3 It is the diameter of the opening OP1 of the resist layer SR1. Again, D 4 Is the diameter of the terminal TE. Furthermore, the terminal TE includes a copper layer TE1 and a nickel layer TE2 on the copper layer TE1. In a plan view, the nickel layer TE2 is contained in the copper layer TE1, so the diameter D of the terminal TE 4 It corresponds to the diameter of the copper layer TE1 constituting the terminal TE. In the second modification, as shown in FIG. 44, the planar shape of the terminal TE, that is, the planar shape of the copper layer TE1 constituting the terminal TE is a circular shape. In the same way as in the case of FIG. 39, in the case of FIG. 44, the planar shape of the opening OP1 of the resist layer SR1 is also circular. Furthermore, the nickel layer TE2 constituting the terminal TE is formed on the copper layer TE1 exposed from the opening OP1 of the resist layer SR1. Therefore, the planar shape and plane size of the opening OP1 of the resist layer SR1 and the terminal TE The planar shape and dimensions of the nickel layer TE2 are substantially the same. In the following, the reason and effect of using the tenth feature will be described. Since the adhesion between the resist layer SR1 and the terminal TE (copper layer TE1) is not so strong, if the contact area of the resist layer SR1 and the terminal TE (copper layer TE1) is small, the resist layer SR1 and the terminal TE ( The adhesion (adhesion) of the copper layer TE1) becomes low, and there is a concern that the interface between the resist layer SR1 and the terminal TE may peel. The peeling off of the interface between the resist layer SR1 and the terminal TE will lead to a decrease in the reliability of the semiconductor device, which is not good. Therefore, it is desirable to increase the contact area between the resist layer SR1 and the terminal TE (copper layer TE1) to a certain extent, so that peeling of the interface between the resist layer SR1 and the terminal TE is not likely to occur. To increase the contact area between the terminal TE (copper layer TE1) and the resist layer SR1, the diameter D of the terminal TE 4 Becomes larger, or the diameter D of the opening OP1 of the resist layer SR1 3 Becomes smaller, which is related to the diameter D of the terminal TE 4 The diameter D of the opening OP1 relative to the resist layer SR1 3 Ratio (D 4 / D 3 ) Corresponds to larger. That is, if D 4 / D 3 If the contact area of the resist layer SR1 and the terminal TE (copper layer TE1) becomes smaller, the interface between the resist layer SR1 and the terminal TE may be peeled off. Therefore, in order to suppress or prevent the peeling, it is more effective not to use D 4 / D 3 Becomes too small. On the other hand, if the diameter D of the opening OP1 of the resist layer SR1 3 When it becomes smaller, the diameter of the solder layer SD embedded in the opening OP1 of the resist layer SR1 also becomes smaller, and the current density in the solder layer SD embedded in the opening OP1 of the resist layer SR1 becomes higher. If the current density in the solder layer SD embedded in the opening OP1 of the resist layer SR1 becomes higher, there is a possibility that deterioration of the solder layer SD (for example, deterioration due to electromigration) may occur and the EM life may be reduced. , So it ’s not good. In order to suppress or prevent the deterioration of the solder layer SD due to the increase in current density, it is more effective not to make the diameter D of the opening OP1 of the resist layer SR1 3 Becomes too small. Also, the diameter D of the terminal TE 4 The change will cause the arrangement pitch of the terminals TE to become larger, or the interval between adjacent terminals TE to become narrower. If the arrangement pitch of the terminals TE becomes larger, the arrangement pitch of the pads PD of the semiconductor wafer CP becomes larger accordingly, which is contrary to the requirements of miniaturization and multi-terminalization of the semiconductor wafer CP, and is therefore unfavorable. In addition, if the interval between the adjacent terminals TE becomes narrow, it is difficult for the wiring substrate CB to penetrate the wiring between the adjacent terminals TE, which leads to poor wiring layout of the wiring substrate CB. Therefore, in order to suppress the arrangement pitch of the terminals TE and reduce the restrictions on the wiring layout of the wiring board CB, it is more effective not to make the diameter D of the terminals TE 4 Becomes too large. The diameter D of the terminal TE 4 Increase the diameter D of the opening OP1 of the resist layer SR1 3 Smaller to make the diameter D of the terminal TE 4 The diameter D of the opening OP1 relative to the resist layer SR1 3 Ratio (D 4 / D 3 ) The way to get bigger comes into play. Therefore, in order to suppress or prevent the deterioration of the solder layer SD due to the increase in current density, and to suppress the arrangement pitch of the terminals TE, and to reduce the restrictions on the wiring layout of the wiring board CB, it is more effective not to use D 4 / D 3 Becomes too large. Therefore, in the second modification, the above tenth feature is adopted, satisfying 1.5 ≦ D 4 / D 3 ≦ 2 relationship. By satisfying 1.5 ≦ D 4 / D 3 The relationship between the resist layer SR1 and the terminal TE can be ensured to a certain extent, and the adhesion between the resist layer SR1 and the terminal TE is improved, thereby making it difficult to peel off the interface between the resist layer 1 and the terminal TE produce. Also, by satisfying D 4 / D 3 The relationship of ≦ 2 can suppress or prevent the deterioration of the solder layer SD caused by the increase in current density, and can also suppress the arrangement pitch of the terminals TE, reducing the restrictions on the wiring layout of the wiring board CB. Therefore, by satisfying 1.5 ≦ D 4 / D 3 The relationship of ≦ 2 can improve the reliability of the semiconductor device, and contribute to miniaturization (small area) and multi-terminalization of the semiconductor wafer CP, and can also increase the freedom of the wiring layout of the wiring substrate CB. Also, the sixth feature described above is described, preferably satisfying D 1 × 0.7 ≦ D 3 ≦ D 1 × 0.8, but this relationship should be related to 1.5 ≦ D as the tenth feature 4 / D 3 When the relationship of ≦ 2 is combined, the diameter D of the terminal TE 4 Diameter D with columnar electrode PL 1 , Preferably satisfying 1.05 ≦ D 4 / D 1 ≦ 1.6 relationship. The tenth feature may be combined with one or more of the aforementioned first to ninth features. In FIG. 44, the planar shape of the terminal TE is circular. When the planar shape of the terminal TE is a circular shape, the following effects can be obtained. That is, if the planar shape of the terminal TE is a circular shape, the interval between adjacent terminals TE can be efficiently increased. For example, when the plane shape of the terminal TE is circular compared to the case of a quadrilateral, if the arrangement pitch of the terminal TE is the same, the interval between adjacent terminals TE is larger than that of the terminal TE when the plane shape of the terminal TE is circular When the plane shape is a quadrilateral. Therefore, by setting the planar shape of the terminal TE to a circular shape, the interval between adjacent terminals TE can be efficiently increased, and wiring can easily penetrate between adjacent terminals TE in the wiring substrate CB, so that The degree of freedom of the wiring layout in the wiring board CB is further improved. In addition, if the opening OP1 of the resist layer SR1 is formed in a round shape, the solder layer SD is less likely to generate anisotropic stress, and the phenomenon that the stress is concentrated at the corners of the solder layer SD can be prevented. This makes it easy to suppress or prevent the deterioration and cracking of the solder layer SD. Secondly, supplement the presence or absence of the nickel layer NL in the columnar electrode PL. In the above-mentioned FIGS. 7 and 35, there is shown a case where a nickel layer (nickel plating layer) is not interposed between the copper layer CL and the solder layer SD, and the columnar electrode PL is formed on the seed layer SE and the seed layer SE The copper layer CL is formed. As another form, as described with reference to FIG. 36 described above, the columnar electrode PL may also be formed by the seed layer SE, the copper layer CL on the seed layer SE, and the nickel layer NL on the copper layer CL. In this case, the nickel layer NL is interposed between the copper layer CL and the solder layer SD. However, compared with the case where the columnar electrode PL includes the nickel layer NL (FIG. 36), as shown in FIGS. 7 and 35, the columnar electrode PL does not include the nickel layer NL and is between the copper layer CL and the solder layer SD The absence of a nickel layer (NL) can increase the EM life. The reason is considered as follows. First, a case where an EM test is performed on a semiconductor device (corresponding to a semiconductor device to which the columnar electrode PL of FIG. 36 is applied) of the nickel layer NL interposed between the copper layer CL and the solder layer SD constituting the columnar electrode PL. In this case, nickel (Ni) diffuses from the nickel layer TE2 constituting the terminal TE to the solder layer SD side, and EM open failures occur between the nickel layer TE2 and the solder layer SD. This phenomenon becomes the decisive EM The main factor of life. Next, an EM test is performed on a semiconductor device (corresponding to a semiconductor device to which the column electrode PL of FIG. 35 is applied) of the nickel layer (NL) interposed between the copper layer CL and the solder layer SD constituting the column electrode PL and the solder layer SD. situation. In this case, a CuSn layer is formed on the nickel layer TE2 constituting the terminal TE due to thermal diffusion of copper (Cu) from the copper layer CL. The CuSn layer serves to prevent the diffusion of nickel (Ni) from the nickel layer TE2 to the solder layer SD The barrier layer functions. Therefore, an EM open circuit failure is unlikely to occur between the nickel layer TE2 constituting the terminal TE and the solder layer SD. In this case, the EM open circuit fault generated between the copper layer CL constituting the columnar electrode PL and the solder layer SD but not between the nickel layer TE2 constituting the terminal TE and the solder layer SD becomes the main factor determining the EM life However, the lifetime of the EM is improved compared with the semiconductor device to which the columnar electrode PL of FIG. 36 is applied (for example, by about 25%). Therefore, by making the columnar electrode PL not include the nickel layer NL, and the nickel layer (NL) is not interposed between the copper layer CL and the solder layer SD constituting the columnar electrode PL, the EM life can be improved. Therefore, the reliability of the semiconductor device can be further improved. In the above, the invention made by the present inventors has been specifically described based on the embodiments, and it goes without saying that the present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the gist thereof. In addition, a part of the contents described in the above-mentioned embodiment (including modified examples) is described below. [Supplementary Note 1] A semiconductor device including a wiring substrate and a semiconductor wafer mounted on the wiring substrate, and the semiconductor wafer includes: a first insulating film; a pad formed on the first insulating film ; A second insulating film formed on the first insulating film and having a first opening that exposes a portion of the pad; and a columnar electrode formed on the first opening exposed above On the pad; the wiring board includes: a terminal; and a third insulating film having a second opening that exposes a portion of the terminal; the second insulating film of the semiconductor wafer has a second side opposite to the wiring board 1 main surface, the third insulating film of the wiring board has a second main surface opposite to the semiconductor wafer, and in a plan view, the columnar electrode includes the first opening and a part of the columnar electrode Overlapping with the second insulating film, the columnar electrode of the semiconductor wafer and the terminal of the wiring board are interposed between the columnar electrode and the terminal by welding Layer is connected, in a plan view, the second opening portion contained in the columnar electrodes, and the above 0.7 times the diameter of the columnar first electrode of the second third of the diameter of each opening portion and 0.8 times or less. [Supplementary note 2] A semiconductor device including a wiring substrate and a semiconductor wafer mounted on the wiring substrate, and the semiconductor wafer includes: a first insulating film; a pad formed on the first insulating film ; A second insulating film formed on the first insulating film and having a first opening that exposes a portion of the pad; and a columnar electrode formed on the first opening exposed above On the pad; the wiring board includes: a terminal; and a third insulating film having a second opening that exposes a portion of the terminal; the second insulating film of the semiconductor wafer has a second side opposite to the wiring board 1 main surface, the third insulating film of the wiring board has a second main surface opposite to the semiconductor wafer, and in a plan view, the columnar electrode includes the first opening and a part of the columnar electrode Overlapping with the second insulating film, the columnar electrode of the semiconductor wafer and the terminal of the wiring board are interposed between the columnar electrode and the terminal by welding Layer is connected, at a top and the contents of the columnar electrode pad. [Supplementary Note 3] A semiconductor device including a wiring substrate and a semiconductor wafer mounted on the wiring substrate, and the semiconductor wafer includes: a first insulating film; a pad formed on the first insulating film ; A second insulating film formed on the first insulating film and having a first opening that exposes a portion of the pad; and a columnar electrode formed on the first opening exposed above On the pad; the wiring board includes: a terminal; and a third insulating film having a second opening that exposes a portion of the terminal; the second insulating film of the semiconductor wafer has a second side opposite to the wiring board 1 main surface, the third insulating film of the wiring board has a second main surface opposite to the semiconductor wafer, and in a plan view, the columnar electrode includes the first opening and a part of the columnar electrode Overlapping with the second insulating film, the columnar electrode of the semiconductor wafer and the terminal of the wiring board are interposed between the columnar electrode and the terminal by welding Layers are connected, and when the diameter of the second opening portion of the first insulating film 3 is D 3 And set the diameter of the above terminal to D 4 , 1.5 ≦ D 4 / D 3 ≦ 2 established.

BL‧‧‧焊料球BL‧‧‧Solder ball

BS‧‧‧基材層BS‧‧‧Base layer

CB‧‧‧配線基板CB‧‧‧Wiring board

CBa‧‧‧上表面CBa‧‧‧upper surface

CBb‧‧‧下表面CBb‧‧‧Lower surface

CL‧‧‧銅層CL‧‧‧Copper layer

CP‧‧‧半導體晶片CP‧‧‧Semiconductor chip

CPB‧‧‧配線構造形成區域CPB‧‧‧ Wiring structure formation area

CY‧‧‧晶片搭載區域CY‧‧‧chip loading area

D1‧‧‧直徑D 1 ‧‧‧Diameter

D2‧‧‧直徑D 2 ‧‧‧Diameter

D3‧‧‧直徑D 3 ‧‧‧Diameter

D4‧‧‧直徑D 4 ‧‧‧Diameter

DS‧‧‧階差DS‧‧‧step difference

G1‧‧‧閘極電極G1‧‧‧Gate electrode

G2‧‧‧閘極電極G2‧‧‧Gate electrode

GF‧‧‧閘極絕緣膜GF‧‧‧Gate insulating film

h1‧‧‧厚度h 1 ‧‧‧thickness

h2‧‧‧厚度h 2 ‧‧‧thickness

IL1‧‧‧層間絕緣膜IL1‧‧‧Interlayer insulating film

IL2‧‧‧層間絕緣膜IL2‧‧‧Interlayer insulating film

IL3‧‧‧層間絕緣膜IL3‧‧‧Interlayer insulating film

IL4‧‧‧層間絕緣膜IL4‧‧‧Interlayer insulating film

IL5‧‧‧層間絕緣膜IL5‧‧‧Interlayer insulating film

IL6‧‧‧層間絕緣膜IL6‧‧‧Interlayer insulating film

LA‧‧‧焊盤LA‧‧‧Pad

M1‧‧‧配線M1‧‧‧Wiring

M2‧‧‧配線M2‧‧‧Wiring

M3‧‧‧配線M3‧‧‧Wiring

M4‧‧‧配線M4‧‧‧Wiring

NL‧‧‧鎳層NL‧‧‧Nickel layer

NS‧‧‧n型半導體區域NS‧‧‧n-type semiconductor region

NW‧‧‧n型井NW‧‧‧n-type well

OP1‧‧‧開口部OP1‧‧‧Opening

OP2‧‧‧開口部OP2‧‧‧Opening

OP3‧‧‧開口部OP3‧‧‧Opening

OP3a‧‧‧開口部OP3a‧‧‧Opening

OP3b‧‧‧開口部OP3b‧‧‧Opening

OP4‧‧‧開口部OP4‧‧‧Opening

PA‧‧‧絕緣膜PA‧‧‧Insulation film

PA1‧‧‧絕緣膜PA1‧‧‧Insulation film

PA2‧‧‧樹脂膜PA2‧‧‧Resin film

PA2a‧‧‧上表面PA2a‧‧‧Top surface

PD‧‧‧焊墊PD‧‧‧solder pad

PDS‧‧‧側面PDS‧‧‧Side

PKG‧‧‧半導體裝置PKG‧‧‧Semiconductor device

PL‧‧‧柱狀電極PL‧‧‧Column electrode

PLK‧‧‧下表面PLK‧‧‧Lower surface

PLS‧‧‧側面PLS‧‧‧Side

PS‧‧‧p型半導體區域PS‧‧‧p-type semiconductor region

PW‧‧‧p型井PW‧‧‧p type well

Qn‧‧‧MISFETQn‧‧‧MISFET

Qp‧‧‧MISFETQp‧‧‧MISFET

RP1‧‧‧光抗蝕層RP1‧‧‧Photoresist layer

SB‧‧‧半導體基板SB‧‧‧Semiconductor substrate

SD‧‧‧焊料層SD‧‧‧Solder layer

SD1‧‧‧焊料層SD1‧‧‧ solder layer

SD2‧‧‧焊料層SD2‧‧‧solder layer

SE‧‧‧晶種層SE‧‧‧Seed layer

SH‧‧‧開口部SH‧‧‧Opening

SR1‧‧‧抗蝕層SR1‧‧‧Anti-corrosion layer

SR1a‧‧‧上表面SR1a‧‧‧Top surface

SR2‧‧‧抗蝕層SR2‧‧‧Anti-corrosion layer

ST‧‧‧元件分離區域ST‧‧‧Component separation area

T1‧‧‧厚度T 1 ‧‧‧ Thickness

T2‧‧‧厚度T 2 ‧‧‧ thickness

TE‧‧‧端子TE‧‧‧Terminal

TE1‧‧‧銅層TE1‧‧‧copper layer

TE2‧‧‧鎳層TE2‧‧‧nickel layer

UFR‧‧‧樹脂部UFR‧‧‧Resin Department

V1‧‧‧導通孔部V1‧‧‧via hole

V2‧‧‧導通孔部V2‧‧‧via hole

V3‧‧‧導通孔部V3‧‧‧via hole

V4‧‧‧導通孔部V4‧‧‧via hole

V5‧‧‧導通孔部V5‧‧‧via hole

圖1係一實施形態之半導體晶片之整體俯視圖。 圖2係一實施形態之半導體晶片之剖視圖。 圖3係一實施形態之半導體晶片之整體俯視圖。 圖4係一實施形態之半導體裝置之頂視圖。 圖5係圖4之半導體裝置之底視圖。 圖6係圖4之半導體裝置之剖視圖。 圖7係圖4之半導體裝置之主要部分剖視圖。 圖8係圖4之半導體裝置中使用之配線基板之頂視圖。 圖9係圖8之配線基板之頂視圖。 圖10係圖8之配線基板之剖視圖。 圖11係圖8之配線基板之主要部分剖視圖。 圖12係搭載圖3之半導體晶片時之配線基板之頂視圖。 圖13係表示一實施形態之半導體裝置之製造步驟之製程流程圖。 圖14係一實施形態之半導體裝置之製造步驟中之剖視圖。 圖15係接著圖14之半導體裝置之製造步驟中之剖視圖。 圖16係接著圖15之半導體裝置之製造步驟中之剖視圖。 圖17係放大表示圖16之一部分之局部放大剖視圖。 圖18係接著圖16之半導體裝置之製造步驟中之剖視圖。 圖19係接著圖18之半導體裝置之製造步驟中之剖視圖。 圖20係一實施形態之半導體晶片之主要部分剖視圖。 圖21係一實施形態之半導體晶片之主要部分俯視圖。 圖22係一實施形態之半導體晶片之主要部分剖視圖。 圖23係一實施形態之半導體晶片之製造步驟中之主要部分剖視圖。 圖24係接著圖23之半導體晶片之製造步驟中之主要部分剖視圖。 圖25係接著圖24之半導體晶片之製造步驟中之主要部分剖視圖。 圖26係接著圖25之半導體晶片之製造步驟中之主要部分剖視圖。 圖27係接著圖26之半導體晶片之製造步驟中之主要部分剖視圖。 圖28係接著圖27之半導體晶片之製造步驟中之主要部分剖視圖。 圖29係接著圖28之半導體晶片之製造步驟中之主要部分剖視圖。 圖30係接著圖29之半導體晶片之製造步驟中之主要部分剖視圖。 圖31係接著圖30之半導體晶片之製造步驟中之主要部分剖視圖。 圖32係接著圖31之半導體晶片之製造步驟中之主要部分剖視圖。 圖33係接著圖32之半導體晶片之製造步驟中之主要部分剖視圖。 圖34係接著圖33之半導體晶片之製造步驟中之主要部分剖視圖。 圖35係接著圖34之半導體晶片之製造步驟中之主要部分剖視圖。 圖36係與圖35相同之半導體晶片之製造步驟中之主要部分剖視圖。 圖37係表示藉由模擬來分析柱狀電極之厚度與自柱狀電極施加至層間絕緣膜之應力之相關性所得的結果之圖表。 圖38係表示藉由模擬來分析柱狀電極之直徑與自柱狀電極施加至層間絕緣膜之應力之相關性所得的結果之圖表。 圖39係圖4之半導體裝置之主要部分俯視圖。 圖40係表示藉由模擬來分析半導體基板之厚度與自柱狀電極施加至層間絕緣膜之應力之相關性所得的結果之圖表。 圖41係第1變化例之半導體裝置之主要部分剖視圖。 圖42係第1變化例之半導體裝置之主要部分俯視圖。 圖43係用以對第1變化例之半導體裝置之效果進行說明之說明圖。 圖44係第2變化例之半導體裝置之主要部分俯視圖。FIG. 1 is an overall plan view of a semiconductor wafer according to an embodiment. 2 is a cross-sectional view of a semiconductor wafer according to an embodiment. 3 is an overall plan view of a semiconductor wafer according to an embodiment. 4 is a top view of a semiconductor device according to an embodiment. 5 is a bottom view of the semiconductor device of FIG. 4. 6 is a cross-sectional view of the semiconductor device of FIG. 4. 7 is a cross-sectional view of a main part of the semiconductor device of FIG. 4. 8 is a top view of a wiring board used in the semiconductor device of FIG. 4. 9 is a top view of the wiring board of FIG. 8. 10 is a cross-sectional view of the wiring board of FIG. 8. 11 is a cross-sectional view of a main part of the wiring board of FIG. 8. 12 is a top view of the wiring board when the semiconductor wafer of FIG. 3 is mounted. FIG. 13 is a process flow diagram showing a manufacturing step of a semiconductor device according to an embodiment. FIG. 14 is a cross-sectional view in a manufacturing step of a semiconductor device according to an embodiment. 15 is a cross-sectional view in the manufacturing step of the semiconductor device continued from FIG. 14. 16 is a cross-sectional view in the manufacturing step of the semiconductor device continued from FIG. 15. Fig. 17 is an enlarged partial cross-sectional view showing a part of Fig. 16; 18 is a cross-sectional view in the manufacturing step of the semiconductor device continued from FIG. 16. FIG. 19 is a cross-sectional view in the manufacturing step of the semiconductor device continued from FIG. 18. 20 is a cross-sectional view of a main part of a semiconductor wafer according to an embodiment. 21 is a plan view of the main part of a semiconductor wafer according to an embodiment. 22 is a cross-sectional view of a main part of a semiconductor wafer according to an embodiment. 23 is a cross-sectional view of main parts in a manufacturing step of a semiconductor wafer according to an embodiment. 24 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer following FIG. 23. FIG. 25 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 24. 26 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 25. 27 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 26. 28 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 27. FIG. 29 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 28. 30 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer following FIG. 29. 31 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer following FIG. 30. FIG. 32 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 31. 33 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 32. 34 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 33. FIG. 35 is a cross-sectional view of main parts in the manufacturing step of the semiconductor wafer continued from FIG. 34. FIG. 36 is a cross-sectional view of main parts in the same manufacturing step of the semiconductor wafer as FIG. 35. FIG. 37 is a graph showing the results of analyzing the correlation between the thickness of the columnar electrode and the stress applied from the columnar electrode to the interlayer insulating film by simulation. Fig. 38 is a graph showing the results of analyzing the correlation between the diameter of the columnar electrode and the stress applied from the columnar electrode to the interlayer insulating film by simulation. 39 is a plan view of the main part of the semiconductor device of FIG. 4. FIG. 40 is a graph showing the result of analyzing the correlation between the thickness of the semiconductor substrate and the stress applied from the columnar electrode to the interlayer insulating film by simulation. 41 is a cross-sectional view of a main part of a semiconductor device according to a first modification. 42 is a plan view of the main part of the semiconductor device according to the first modification. 43 is an explanatory diagram for explaining the effect of the semiconductor device of the first modification. 44 is a plan view of a main part of a semiconductor device according to a second modification.

Claims (20)

一種半導體裝置，其係包含配線基板、及搭載於上述配線基板上之半導體晶片者，且 上述半導體晶片包含： 第1絕緣膜； 焊墊，其係形成於上述第1絕緣膜上； 第2絕緣膜，其係形成於上述第1絕緣膜上，且具有使上述焊墊之一部分露出之第1開口部；及 柱狀電極，其係形成於自上述第1開口部露出之上述焊墊上； 上述配線基板包含： 端子；及 第3絕緣膜，其具有使上述端子之一部分露出之第2開口部； 上述半導體晶片之上述第2絕緣膜具有與上述配線基板對向之側之第1主面， 上述配線基板之上述第3絕緣膜具有與上述半導體晶片對向之側之第2主面， 於俯視下，上述柱狀電極內含上述第1開口部，上述柱狀電極之一部分與上述第2絕緣膜重疊， 上述半導體晶片之上述柱狀電極與上述配線基板之上述端子係介隔介置於上述柱狀電極與上述端子之間之焊料層而連接，且 上述柱狀電極自上述第1主面起之第1厚度係上述焊料層自上述第2主面起之第2厚度之一半以上且上述第2厚度以下。A semiconductor device including a wiring substrate and a semiconductor wafer mounted on the wiring substrate, and the semiconductor wafer includes: a first insulating film; a pad formed on the first insulating film; a second insulating A film formed on the first insulating film and having a first opening that exposes a portion of the pad; and a columnar electrode formed on the pad exposed from the first opening; The wiring board includes: a terminal; and a third insulating film having a second opening that exposes a part of the terminal; the second insulating film of the semiconductor wafer has a first main surface on a side facing the wiring board, The third insulating film of the wiring board has a second main surface on a side facing the semiconductor wafer, and in a plan view, the columnar electrode includes the first opening, and a portion of the columnar electrode is The insulating films overlap, and the columnar electrode of the semiconductor wafer and the terminal of the wiring board are interposed between the columnar electrode and the terminal The solder layer is connected, a second or more and half the thickness of the columnar electrode lines from the first thickness of the solder layer of the first main surface from the starting date of the second main surface and said second thickness less. 如請求項1之半導體裝置，其中 上述第1厚度與上述第2厚度之合計為上述柱狀電極之第1直徑之0.5倍以上且0.8倍以下。The semiconductor device according to claim 1, wherein the sum of the first thickness and the second thickness is 0.5 times or more and 0.8 times or less the first diameter of the columnar electrode. 如請求項1之半導體裝置，其中 上述第1開口部之第2直徑為上述柱狀電極之第1直徑之0.4倍以上且0.75倍以下。The semiconductor device according to claim 1, wherein the second diameter of the first opening is 0.4 times or more and 0.75 times or less the first diameter of the columnar electrode. 如請求項1之半導體裝置，其中 上述第2絕緣膜具有無機絕緣膜及上述無機絕緣膜上之樹脂膜之積層構造， 上述無機絕緣膜具有第3開口部， 上述樹脂膜具有第4開口部， 於俯視下，上述第3開口部內含上述第4開口部，且 上述第1開口部係藉由上述樹脂膜之上述第4開口部而形成。The semiconductor device according to claim 1, wherein the second insulating film has a laminated structure of an inorganic insulating film and a resin film on the inorganic insulating film, the inorganic insulating film has a third opening, and the resin film has a fourth opening, In a plan view, the third opening includes the fourth opening, and the first opening is formed by the fourth opening of the resin film. 如請求項4之半導體裝置，其中 上述柱狀電極係與上述樹脂膜相接，而不與上述無機絕緣膜相接。The semiconductor device according to claim 4, wherein the columnar electrode is in contact with the resin film and not in contact with the inorganic insulating film. 如請求項4之半導體裝置，其中 上述樹脂膜為聚醯亞胺樹脂膜。The semiconductor device according to claim 4, wherein the resin film is a polyimide resin film. 如請求項6之半導體裝置，其中 上述無機絕緣膜包含氮化矽膜或氮氧化矽膜。The semiconductor device according to claim 6, wherein the inorganic insulating film includes a silicon nitride film or a silicon oxynitride film. 如請求項4之半導體裝置，其中 上述樹脂膜係上述半導體晶片之最上層之絕緣膜。The semiconductor device according to claim 4, wherein the resin film is the uppermost insulating film of the semiconductor wafer. 如請求項4之半導體裝置，其中 上述樹脂膜於上述焊墊與上述柱狀電極之間之第3厚度大於上述焊墊之第4厚度，且小於上述第1厚度。The semiconductor device according to claim 4, wherein the third thickness of the resin film between the pad and the columnar electrode is larger than the fourth thickness of the pad and smaller than the first thickness. 如請求項1之半導體裝置，其中 上述第1開口部之平面形狀為圓形狀。The semiconductor device according to claim 1, wherein the planar shape of the first opening is a circular shape. 如請求項10之半導體裝置，其中 上述柱狀電極之平面形狀為圓形狀。The semiconductor device according to claim 10, wherein the planar shape of the columnar electrode is a circular shape. 如請求項1之半導體裝置，其中 於俯視下，上述第2開口部之第3直徑小於上述柱狀電極之第1直徑。The semiconductor device according to claim 1, wherein the third diameter of the second opening is smaller than the first diameter of the columnar electrode in plan view. 如請求項1之半導體裝置，其中 於俯視下，上述第2開口部內含於上述柱狀電極。The semiconductor device according to claim 1, wherein the second opening is contained in the columnar electrode in plan view. 如請求項1之半導體裝置，其中 上述半導體晶片包含半導體基板，且 上述半導體基板之第5厚度為25～300 μm。The semiconductor device according to claim 1, wherein the semiconductor wafer includes a semiconductor substrate, and the fifth thickness of the semiconductor substrate is 25 to 300 μm. 如請求項1之半導體裝置，其中 上述柱狀電極係以銅為主體之Cu柱電極。The semiconductor device according to claim 1, wherein the columnar electrode is a Cu column electrode mainly composed of copper. 如請求項1之半導體裝置，其更包含 填充於上述配線基板與上述半導體晶片之間之樹脂部。The semiconductor device according to claim 1, further comprising a resin portion filled between the wiring board and the semiconductor wafer. 如請求項1之半導體裝置，其中 上述半導體晶片具有包含複數層配線層之配線構造，且 上述配線構造包含低介電常數絕緣膜。The semiconductor device according to claim 1, wherein the semiconductor wafer has a wiring structure including a plurality of wiring layers, and the wiring structure includes a low dielectric constant insulating film. 如請求項1之半導體裝置，其中 上述第3絕緣膜係上述配線基板之最上層之絕緣膜。The semiconductor device according to claim 1, wherein the third insulating film is the uppermost insulating film of the wiring board. 如請求項1之半導體裝置，其中 上述第3絕緣膜係阻焊層。The semiconductor device according to claim 1, wherein the third insulating film is a solder resist layer. 一種半導體裝置，其係包含配線基板、及搭載於上述配線基板上之半導體晶片者，且 上述半導體晶片包含： 第1絕緣膜； 焊墊，其係形成於上述第1絕緣膜上； 第2絕緣膜，其係形成於上述第1絕緣膜上，且具有使上述焊墊之一部分露出之第1開口部；及 柱狀電極，其係形成於自上述第1開口部露出之上述焊墊上； 上述配線基板包含： 端子；及 第3絕緣膜，其具有使上述端子之一部分露出之第2開口部； 上述半導體晶片之上述第2絕緣膜具有與上述配線基板對向之側之第1主面， 上述配線基板之上述第3絕緣膜具有與上述半導體晶片對向之側之第2主面， 於俯視下，上述柱狀電極內含上述第1開口部，上述柱狀電極之一部分與上述第2絕緣膜重疊， 上述半導體晶片之上述柱狀電極與上述配線基板之上述端子係介隔介置於上述柱狀電極與上述端子之間之焊料層而連接， 上述柱狀電極自上述第1主面起之第1厚度為上述焊料層自上述第2主面起之第2厚度之一半以上且上述第2厚度以下， 上述第1厚度與上述第2厚度之合計為上述柱狀電極之第1直徑之0.5倍以上且0.8倍以下， 上述第1開口部之第2直徑為上述柱狀電極之上述第1直徑之0.4倍以上且0.75倍以下， 上述第2絕緣膜具有無機絕緣膜及上述無機絕緣膜上之樹脂膜之積層構造， 上述無機絕緣膜具有第3開口部， 上述樹脂膜具有第4開口部， 於俯視下，上述第3開口部內含上述第4開口部，且 上述第1開口部係藉由上述樹脂膜之上述第4開口部而形成。A semiconductor device including a wiring substrate and a semiconductor wafer mounted on the wiring substrate, and the semiconductor wafer includes: a first insulating film; a pad formed on the first insulating film; a second insulating A film formed on the first insulating film and having a first opening that exposes a portion of the pad; and a columnar electrode formed on the pad exposed from the first opening; The wiring board includes: a terminal; and a third insulating film having a second opening that exposes a part of the terminal; the second insulating film of the semiconductor wafer has a first main surface on a side facing the wiring board, The third insulating film of the wiring board has a second main surface on a side facing the semiconductor wafer, and in a plan view, the columnar electrode includes the first opening, and a portion of the columnar electrode is The insulating films overlap, and the columnar electrode of the semiconductor wafer and the terminal of the wiring board are interposed between the columnar electrode and the terminal The solder layer is connected, the first thickness of the columnar electrode from the first main surface is more than half of the second thickness of the solder layer from the second main surface and less than the second thickness, the first thickness is The total of the second thickness is 0.5 times or more and 0.8 times or less the first diameter of the columnar electrode, and the second diameter of the first opening is 0.4 times or more and 0.75 times the first diameter of the columnar electrode Hereinafter, the second insulating film has a laminated structure of an inorganic insulating film and a resin film on the inorganic insulating film, the inorganic insulating film has a third opening, and the resin film has a fourth opening. In a plan view, the third The opening includes the fourth opening, and the first opening is formed by the fourth opening of the resin film.
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