TW201903989A - Sealing film, method of manufacturing electronic component device, and electronic component device - Google Patents

Abstract

Disclosed is a sealing film for sealing an electronic component, said sealing film being provided with a seal resin layer having: a first resin layer containing a first thermosetting resin and a first inorganic filler; and a second resin layer containing a second thermosetting resin and a second inorganic filler. The curing shrinkage ratio of the second resin layer, which has a sealing surface that is made to face toward the electronic component side when the electronic component is to be sealed, is larger than the curing shrinkage ratio of the first resin layer.

Description

Method for manufacturing sealing film, electronic component device, and electronic component device

The present invention relates to a sealing film, and particularly to a method for manufacturing a sealing film, an electronic component device such as a semiconductor device using the sealing film, and an electronic component device. The sealing film can be used for sealing semiconductor elements such as semiconductor wafers, Or the embedment of electronic components arranged on a printed wiring board.

Along with the reduction in weight and thickness of electronic devices, semiconductor devices are also becoming smaller and thinner. In addition, a structure such as a semiconductor device having a size approximately the same as that of a semiconductor wafer, or a package on package in which semiconductor devices are stacked on the semiconductor device is also popular. Therefore, it is expected that the miniaturization and thickness reduction of semiconductor devices will be further developed in the future.

If the semiconductor wafer is going to be miniaturized and the number of terminals is increased, it will become difficult to provide all the terminals for external connection on the semiconductor wafer. For example, when a plurality of terminals for external connection are provided, the pitch between the terminals is narrowed, and the height of the terminals is reduced, which makes it difficult to ensure the connection reliability of the semiconductor device after mounting. Therefore, in order to reduce the size and thickness of semiconductor devices, many new types of mounting methods have been proposed.

For example, there has been proposed a mounting method and a semiconductor device manufactured by using the mounting method (for example, refer to Patent Documents 1 to 4). The mounting method is to rearrange semiconductor wafers at appropriate intervals, and then use a solid state or A liquid sealing resin is used for sealing, and then a terminal for external connection is further provided in the sealing resin portion of the obtained sealing molded article. The semiconductor wafer is made of a semiconductor wafer and is singulated.

After reconfiguration, the sealing of the semiconductor wafer is usually performed by molding using a liquid or solid resin sealing material. In the above-mentioned assembly method, steps for forming a circuit, forming a terminal for external connection, and the like can be performed with respect to a seal molded article made by sealing, and these steps are used to arrange the terminal for external connection.

Since the steps of forming the wiring and the external terminals are performed for the sealed molding, the more semiconductor wafers to be repositioned, the more semiconductor devices that can be produced in one step. Therefore, research is being conducted on the increase in the size of the sealed molded article. For example, in order to correspond to the use of a semiconductor manufacturing apparatus at the time of forming a line, a sealed molded product may be formed into a wafer shape. At this time, the size of the wafer is increased to reduce the number of manufacturing steps and reduce costs (for example, refer to Patent Documents 5 and 6). On the other hand, in order to further increase the size and to use a printed wiring board manufacturing apparatus and the like which are cheaper than a semiconductor manufacturing apparatus, the panelization of a sealed molded article is also being studied. [Prior Patent Literature] (Patent Literature)

Patent Literature 1: Japanese Patent No. 3616615 Patent Literature 2: Japanese Patent Laid-Open No. 2001-244372 Patent Literature 3: Japanese Patent Laid-Open No. 2001-127095 Patent Literature 4: US Patent Application Publication No. 2007/205513 Specification Patent Document 5: Japanese Patent No. 5385247 Patent Document 6: Japanese Patent Laid-Open No. 2012-224062

[Problems to be Solved by the Invention] However, if the seal-molded article is enlarged, the problem of warpage of the seal-molded article generated when the heat-cured sealing resin is cooled to room temperature tends to become significant. The occurrence of warpage in the sealed molded product may cause a positional shift in the cutting step and the rewiring step, and the reliability of the package is lowered. In addition, if the warpage is large, for example, it may be difficult to form an insulating resin layer for rewiring. When the insulating resin for rewiring is a liquid material, it is impossible to fix the sealing molding to the coating. Defects such as coating fixtures for liquid materials.

In view of the foregoing, it is an object of the present invention to provide a sealing film capable of sufficiently suppressing warpage of a seal-molded article; and a method for manufacturing an electronic component device and an electronic component device using the method and the device Sealing film. [Technical means to solve the problem]

According to an aspect of the present invention, there is provided a sealing film for sealing electronic parts. The sealing film includes a sealing resin layer having a first resin layer and a second resin layer. The first resin layer includes a first resin layer. A thermosetting resin and a first inorganic filler, and the second resin layer contains a second thermosetting resin and a second inorganic filler. The second resin layer has a sealing surface that faces the electronic component side when the electronic component is sealed, and the second resin layer and the first resin layer are sequentially laminated from the sealing surface side. The hardening shrinkage of the second resin layer is larger than the hardening shrinkage of the first resin layer.

The sealing film according to one embodiment of the present invention can sufficiently suppress the warpage of the sealing molded article by having the above-mentioned configuration.

The ratio of the curing shrinkage ratio of the second resin layer to the curing shrinkage ratio of the first resin layer may exceed 1 and be less than 10.

The first thermosetting resin and the second thermosetting resin may be the same epoxy resin or different epoxy resins.

According to another aspect of the present invention, there is provided a method for manufacturing an electronic component device, comprising: a step of embedding an electronic component, which heats the sealing resin of the sealing film according to the one aspect of the present invention under heating; Layer, and an electronic component disposed opposite to the sealing surface of the sealing resin layer, thereby burying the electronic component in the sealing resin layer; and a step of forming a sealing layer, which hardens the sealing resin layer to form a seal The hardened material of the resin layer is a sealing layer in which electronic parts are sealed.

According to another aspect of the present invention, there is provided an electronic component device including an electronic component and a sealing portion sealed with the electronic component. The sealing portion may be a cured product of the sealing resin layer of the sealing film in the present invention. The electronic component may be surrounded by the hardened material of the second resin layer in the sealing portion.

With regard to the electronic component device and the manufacturing method thereof, the electronic component may include a semiconductor wafer. At this time, the electronic component device is generally a semiconductor device. [Effect of the invention]

According to an aspect of the present invention, a sealing film can be provided that can sufficiently suppress warpage of a sealed molded article. Further, a method for manufacturing an electronic component device, which is a semiconductor device or the like using the sealing film, and an electronic component device, which is a semiconductor device or the like, may also be provided.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments.

FIG. 1 is a schematic cross-sectional view showing a sealing film according to an embodiment. The sealing film of this embodiment is a sealing film for sealing electronic parts, and includes a sealing resin layer 10 having a two-layer structure composed of a first resin layer 1 and a second resin layer 2. A resin layer 1 contains a first thermosetting resin and a first inorganic filler, and the second resin layer 2 contains a second thermosetting resin and a second inorganic filler. The main surface on the second resin layer 2 side is a sealing surface 2S, which faces the electronic component side when sealing the electronic component.

The hardening shrinkage of the second resin layer 2 is larger than the hardening shrinkage of the first resin layer 1. By using such a sealing film to seal electronic parts, even in the case of a large-sized sealing molded article, it is possible to prevent the sealing molded article from warping when the sealing film is returned to room temperature after being cured by heat. Further, the electronic component can be sealed with a good embedding property.

The reason why such an effect can be obtained is not particularly limited, but the present inventors consider the following. First of all, in the sealing with a resin sealing material, the linear expansion coefficient of the sealed body such as a semiconductor wafer and the linear expansion coefficient of the resin sealing material may be different. At room temperature, there is a large difference between the amount of shrinkage of the resin sealing material and the amount of shrinkage of the sealed body. For example, when a silicon wafer is used as a semiconductor wafer and an epoxy resin sealing material is used to produce a sealed molded product, the linear expansion coefficient of the silicon wafer is 3.4 ppm / ° C. The linear expansion coefficient of the epoxy resin sealing material is used even in inorganic filling. When the agent is filled at a high ratio, it is still about 6 ppm / ° C. With such a difference in linear expansion coefficient, there is also a difference in the amount of thermal shrinkage between the silicon wafer and the epoxy resin sealing material. Therefore, for example, as shown in FIG. 2 (a), in the sealed molded article 100 obtained by sealing the semiconductor wafer 20 with the single-layered sealing film 3, the hardened material 3a side of the resin sealing material is usually not formed. On the side where the semiconductor wafer 20 having a smaller shrinkage amount is embedded, warpage in a recessed direction occurs.

In contrast, in the case of the sealing film of this embodiment, as shown in FIG. 2 (b), when the semiconductor wafer 20 is buried on the second resin layer 2 side, compared with the first resin layer 1, the first Since the amount of thermal shrinkage of the two resin layers 2 is large, the total amount of thermal shrinkage of the second resin layer 2 and the semiconductor wafer 20 becomes a value close to that of the first resin layer 1. After the heat curing, the warpage caused by the heat shrinkage of the hardened material 1a of the first resin layer and the warpage caused by the heat shrinkage of the hardened material 2a of the second resin layer cancel each other out. As a result, it is possible to suppress the warpage. The warpage of the sealing molded article 100 is composed of a hardened body of a sealing film, that is, a sealing portion 10 a and a semiconductor wafer 20 sealed by the sealing portion 10 a.

In addition, with the sealing film of the present embodiment, the second resin layer having a higher curing shrinkage rate tends to have a relatively higher hardness in the process of curing by heating than the first resin layer having a lower curing shrinkage rate. fluidity. Therefore, by burying the electronic component on the second resin layer side, the electronic component can also be sealed with a good embedding property, which means that the occurrence of unfilled parts can be suppressed.

Furthermore, in the case of the sealing film of this embodiment, since the elastic coefficients of the first resin layer and the second resin layer are not limited, a material with a higher elastic coefficient can be used as the thermosetting resin. Therefore, the sealing film of this embodiment is excellent in handleability, and is also excellent from the viewpoint that the following problems are unlikely to occur, such as the positional displacement of electronic components such as semiconductor wafers, and the provision of a rewiring layer Warping caused by the stress of the rewiring layer.

The curing shrinkage ratio of the first resin layer and the second resin layer can be determined by the following method based on, for example, changes in the specific gravity of each resin layer before and after heat curing. When the specific gravity of the resin layer at 23 ° C before heating and curing is d ₀ , and the specific gravity of the resin layer after cooling to 23 ° C after heating and curing is d ₁ , the curing shrinkage can be obtained by the following formula: Hardening shrinkage (%) = {(d ₁ －d ₀ ) / d ₁ } × 100. Heat hardening is performed under a specific pressure (for example, 3 MPa). The heating conditions for heat curing are adjusted so that the resin layer is sufficiently hardened and the volume change due to the hardening does not substantially occur. In addition, the cure shrinkage can also be determined from the volume change of each resin layer before and after heat curing. Specifically, it can be determined based on the ratio of the difference in volume changes before and after heat curing to the volume of each resin layer before heat curing. For example, using a pressure-volume-temperature (PVT) tester, it is possible to determine the cure shrinkage (shrinkage amount) from the volume change in temperature of the sample of the resin layer filled into the mold. In this case, by keeping the sample at the curing temperature until the sample does not substantially change in volume, the curing shrinkage can be determined. The curing shrinkage ratio includes not only shrinkage accompanied by a curing reaction of a thermosetting resin, but also shrinkage caused by reducing a constituent material due to a hardening process such as volatilization of a solvent.

The ratio of the hardening shrinkage ratio of the second resin layer to the hardening shrinkage ratio of the first resin layer is not particularly limited as long as it is greater than 1. From the viewpoint of more effectively suppressing the warpage of the sealed molded product, it may be 1.05 or more 1.10 or more or 1.15 or more. The upper limit of the ratio of the curing shrinkage ratio of the second resin layer to the curing shrinkage ratio of the first resin layer is not particularly limited, and is, for example, less than 10.

From the viewpoint of suppressing warpage and dimensional stability of the molded product, the curing shrinkage rate of the first resin layer may be, for example, 0.4% or less, 0.3% or less, or 0.2% or less.

The curing shrinkage rate of the second resin layer may be, for example, 0.2% or more, 0.3% or more, or 0.4% or more from the viewpoint of more effectively correcting warpage by curing shrinkage. From the viewpoint of the dimensional stability of the molded product, the curing shrinkage rate of the second resin layer may be, for example, 2.0% or less, 1.5% or less, or 1.0% or less.

The method of adjusting the curing shrinkage ratio of the first resin layer and the second resin layer is not particularly limited. For example, the curing shrinkage of the first resin layer and the second resin layer can be adjusted by one or more selected from the following methods: selecting different types of thermosetting resins as the first resin layer A method of the first curable resin and a second curable resin contained in the second resin layer; a method of changing the type and / or content of a curing agent or a curing catalyst; and forming the first resin layer and the second resin The method of adjusting the hardening rate by changing the degree of thermal history during the layer process.

When using a thermal history method, by increasing the thermal history during the formation of the resin layer, the hardening rate can be increased. Generally, if the hardening rate is high, the hardening shrinkage rate of heat hardening from its state tends to be small. The size of the thermal history can be adjusted, for example, by the drying temperature and drying time for forming the first resin layer and the second resin layer. The hardening rate of the first resin layer can also be relatively increased by applying a varnish-like resin composition to form the second resin layer on the first resin layer, and applying the varnish after coating. If the resinous composition is heated together with the first resin layer, the thermal history of the first resin layer can be made larger than that of the second resin layer. The hardening rate can be evaluated, for example, based on the hardened calorific value measured by a differential scanning calorimeter. The hardening heat value in the resin composition (no solvent or varnish) used to form the resin layer can be used as a reference (hardening rate of 0%), and it can be calculated from the ratio of the hardening heat value of the resin layer to the above reference. Hardening rate.

The thickness of the first resin layer and the second resin layer is not particularly limited, and may be, for example, 30 to 800 μm, 50 to 500 μm, or 80 to 300 μm. As long as the thickness is 30 μm or more, it is particularly easy to obtain a good embedding property of an electronic component. As long as the thickness is 800 μm or less, the effect of the present invention can be obtained at a higher level. The thicknesses of the first resin layer and the second resin layer may be slightly the same or different from each other. When the thicknesses of the first resin layer and the second resin layer are different, the thickness of the first resin layer may be smaller than that from the viewpoint of suppressing warpage and thinning of electronic parts. The thickness of the second resin layer is thinner. The total thickness of the first resin layer and the second resin layer (thickness of the sealing resin layer) is not particularly limited, and may be 50 to 1000 μm.

The first resin layer contains a first thermosetting resin and a first inorganic filler, and the second resin layer contains a second thermosetting resin and a second inorganic filler. The first thermosetting resin and the second thermosetting resin may be the same or different from each other, but by combining different thermosetting resins from each other, the first resin layer and the second resin layer can be used. The hardening shrinkage is set to different methods. Each of the first thermosetting resin and the second thermosetting resin may be a thermosetting resin described below. Here, "same" means that the structures of the compounds as the thermosetting resin are substantially the same.

The thermosetting resin may be any compound that can form a crosslinked structure by a thermosetting reaction. Examples thereof include epoxy resin, phenol resin, unsaturated fluorene resin, cyanate resin, Isocyanate resin, benzoxazine resin, oxetane resin, amine resin, unsaturated polyester resin, allyl resin, dicyclopentadiene resin, silicone resin, triazabenzene resin, and Melamine resin. These may be used individually by 1 type, and may use 2 or more types together. These thermosetting resins can be combined with a curing agent and / or a curing catalyst as necessary. Epoxy resin can be used from the viewpoints of excellent fluidity and being suitable for embedding in electronic parts.

The epoxy resin is not particularly limited as long as it is a compound having two or more epoxy groups (or epoxypropyl groups) in one molecule. Examples of the epoxy resin include bisphenol A type epoxy resin and bisphenol AP type epoxy resin (1,1-bis (4-hydroxyphenyl) -1-phenylethane diepoxypropyl ether). ), Bisphenol AF epoxy resin (2,2-bis (4-hydroxyphenyl) hexafluoropropane diglycidyl ether), bisphenol B epoxy resin (2,2-bis (4-hydroxy Phenyl) butane diglycidyl ether), bisphenol BP epoxy resin (bis (4-hydroxyphenyl) diphenylmethane diglycidyl ether), bisphenol C epoxy resin (2, 2-bis (3-methyl-4-hydroxyphenyl) propane diglycidyl ether), bisphenol E epoxy resin (1,1-bis (4-hydroxyphenyl) ethane diglycidyl Ether), bisphenol F-type epoxy resin, bisphenol G-type epoxy resin (2,2-bis (4-hydroxy-3-isopropylphenyl) propane diglycidyl ether), bisphenol M type Epoxy resin (1,3-bis [2- (4-hydroxyphenyl) -2-propyl] phenylenedioxypropyl ether), bisphenol P-type epoxy resin (1,4-bis (2- (4-hydroxyphenyl) -2-propyl) phenylenedioxypropyl ether)), bisphenol PH epoxy resin (5,5 '-(1-methylethylene) -bis [1, 1 '-(diphenyl) -2-ol] propane diglycidyl ether), bisphenol TMC epoxy resin (1,1-bis (4-hydroxyphenyl) -3,3,5-trimethyl Cyclohexane diglycidyl ether), bisphenol Z epoxy Resin (1,1-bis (4-hydroxyphenyl) cyclohexane diglycidyl ether), hexanediol bisphenol S diglycidyl ether, bisphenol S type epoxy resin, novolac type Epoxy resin (phenol novolac epoxy resin, etc.), biphenyl epoxy resin, biphenylarane epoxy resin, naphthalene epoxy resin, condensation products of phenols and aromatic aldehydes with phenolic hydroxyl groups Epoxy resin, dicyclopentadiene epoxy resin, dicyclopentadiene arane epoxy resin, bixylenol epoxy resin, bixylenol epoxy resin, hydrogenated Hydrogenated bisphenol A type epoxy resins such as bisphenol A epoxy propyl ether, and dibasic acid modified diglycidyl ether type epoxy resins; trimeric isocyanate (2,3- Epoxypropyl) esters; and, aliphatic epoxy resins.

As the epoxy resin, a commercially available product can be used. Examples of commercially available epoxy resins include EXA4700 (4-functional naphthalene-type epoxy resin) manufactured by DIC Corporation, and NC-7000 (a polyfunctional solid epoxy resin containing a naphthalene skeleton) manufactured by Nippon Kayaku Co., Ltd. ) And other naphthalene-type epoxy resins; epoxides of condensation products of phenols such as EPPN-502H (triphenol epoxy resin) manufactured by Nippon Kayaku Co., Ltd. and aromatic aldehydes having phenolic hydroxyl groups; DIC Corporation Dicyclopentadiene arane type epoxy resin such as EPICLON HP-7200H (multifunctional solid epoxy resin containing a dicyclopentadiene skeleton) manufactured by Japan Co., Ltd .; NC-3000H (containing Multifunctional solid epoxy resin with benzene skeleton) and other biphenylarane type epoxy resins; EPICLON N660 and EPICLON N690 manufactured by DIC Corporation, and novolac type rings such as EOCN-104S manufactured by Nippon Kayaku Co., Ltd. Oxyresin; TEPIC and other trimeric isocyanate (2,3-epoxypropyl) esters manufactured by Nissan Chemical Industry Co., Ltd., EPICLON 860, EPICLON 900-IM, EPICLON EXA-4816 manufactured by DIC Corporation And EPICLON EXA-4822, A Araldite AER280 manufactured by SAHI-CIBA Co., Ltd., Epotec YD 134 manufactured by Todo Chemical Co., Ltd., jER834, jER872 manufactured by Mitsubishi Chemical Co., Ltd., ELA-134 manufactured by Sumitomo Chemical Co., Ltd., and manufactured by Mitsubishi Chemical Co., Ltd. EPIKOTE 807, EPIKOTE 815, EPIKOTE 825, EPIKOTE 827, EPIKOTE 828, EPIKOTE 834, EPIKOTE 1001, EPIKOTE 1004, EPIKOTE 1007, EPIKOTE 1009, DER-330, DER-301, DER-361 manufactured by The Dow Chemical Company, Toto Bisphenol A epoxy resins such as YD8125 and YDF8170 manufactured by Chemical Co., Ltd .; Bisphenol F epoxy resins such as jER 806 manufactured by Mitsubishi Chemical Corporation; EPICLON HP-4032 manufactured by DIC Corporation Naphthalene-type epoxy resins; naphthalene-type epoxy resins such as EPICLON HP-4032 manufactured by DIC Corporation; phenol novolac-type epoxy resins such as EPICLON N-740 manufactured by DIC Corporation; manufactured by NAGASE CHEMTEX Corporation Aliphatic epoxy resins such as DENACOL DLC301 (the above are all product models). These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

The content of the first thermosetting resin in the first resin layer is based on the total amount of the first resin layer from the viewpoint of sufficiently ensuring the film formability even in the presence of an inorganic filler described later. It may be 5 mass% or more, 10 mass% or more, or 15 mass% or more. From the viewpoint of further reducing curing shrinkage, the content of the first thermosetting resin in the first resin layer may be 40% by mass or less, 30% by mass or less based on the total amount of the first resin layer. 20% by mass or less.

The content of the second thermosetting resin in the second resin layer may be 10% by mass based on the total amount of the second resin layer from the viewpoint of more effectively correcting warpage due to curing shrinkage. 15% or more or 20% by mass or more. From the viewpoint of the dimensional stability of the sealed molded product, the content of the second thermosetting resin in the second resin layer may be 45% by mass or less and 35% by mass based on the total amount of the second resin layer. Below or 30% by mass.

The curing agent that can be combined with the thermosetting resin is not particularly limited. For example, when an epoxy resin is used as the thermosetting resin, the curing agent may have two or more epoxy groups (epoxy groups) in one molecule. Propyl) A reactive group compound. The hardener may be used singly or in combination of two or more kinds.

Examples of the curing agent include a phenol resin, an acid anhydride, an imidazole compound, an aliphatic amine, and an alicyclic amine.

The phenol resin is not particularly limited as long as it is a compound having two or more phenolic hydroxyl groups in one molecule. Examples of the phenol resin include a resin obtained by condensing or co-condensing a phenol compound or a naphthol compound with an aldehyde compound under an acid catalyst. The phenols are phenol, cresol, xylenol, m-phenol Resorcinol, catechol, bisphenol A, bisphenol F, etc., the aforementioned naphthols are α-naphthol, β-naphthol, and dihydroxynaphthalene, and the aforementioned aldehydes are formaldehyde, acetaldehyde, propionaldehyde, Benzaldehyde and salicylaldehyde; biphenyl skeleton phenol resin; p-xylene modified phenol resin; m-xylene / p-xylene modified phenol resin; melamine modified phenol resin; terpene modified phenol resin; dicyclopentadiene Olefin modified phenol resin; cyclopentadiene modified phenol resin; polycyclic aromatic ring modified phenol resin; and xylene modified naphthol resin.

As the phenol resin, a commercially available product can be used. Examples of commercially available phenol resins include PHENOLITE LF 2882, PHENOLITE LF 2822, PHENOLITE TD-2090, PHENOLITE TD-2149, PHENOLITE VH-4150, and PHENOLITE VH4170 manufactured by Dainippon Ink Chemical Industry Co., Ltd. Industrial Co., Ltd. PAPS-PN2; Mitsui Chemical Co., Ltd. XLC-LL and XLC-4L; Nippon Steel & Sumitomo Chemical Co., Ltd. SN-100, SN-180, SN-300, SN-395 And SH-400; Tris P-HAP, Tris P-PA, Tris P-PHBA, CyRS-PRD4 and MTPC manufactured by Honshu Chemical Industry Co., Ltd .; SK resin HE910-10 (above, all Is the product model).

The content of the hardener is not particularly limited. For example, when an epoxy resin is used as the thermosetting resin and a phenol resin is used as the hardener, the equivalent ratio of epoxy group to phenolic hydroxyl group (epoxy group / phenolic hydroxyl group) It can be 0.5 to 3.0 or 1.0 to 1.5. When it is another hardener, the equivalent ratio of the epoxy group to the reactive group capable of reacting with the epoxy group (epoxy group / reactive group capable of reacting with the epoxy group) may be 0.5 to 3.0 or 1.0 to 1.5 .

The hardening catalyst that can be combined with the epoxy resin is not particularly limited, and an amine-based, imidazole-based, urea-based, or phosphorus-based hardening catalyst is preferred. Examples of the amine-based hardening catalyst include 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene, and the like. Examples of the imidazole-based curing catalyst include 2-ethyl-4methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, and the like. Examples of the urea curing catalyst include 3-phenyl-1,1-dimethylurea and the like. Examples of the phosphorus-based curing catalyst include triphenylphosphine and its addition reactants, (4-hydroxyphenyl) diphenylphosphine, bis (4-hydroxyphenyl) phenylphosphine, and ginseng (4-hydroxyphenyl) phosphine Wait. Among these, especially imidazole-based hardening accelerators are rich in derivatives and easily obtain desired activity temperatures. Examples of commercially available products of the imidazole-based hardening accelerator include 2PHZ-PW and 2P4MZ manufactured by Shikoku Chemical Industry Co., Ltd.

The content of the curing catalyst is not particularly limited, and may be, for example, 0.05 to 1.0 part by mass or 0.1 to 0.5 part by mass with respect to 100 parts by mass of the total amount of the thermosetting resin.

The first inorganic filler and the second inorganic filler may be the same type or different types from each other.

Examples of the inorganic filler include barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, and oxidation. Particles of aluminum, aluminum hydroxide, silicon nitride, aluminum nitride, etc. From the viewpoint of having a small thermal expansion coefficient and easily obtaining desired cured film characteristics, as the inorganic filler, silicon dioxide particles are preferred. The inorganic filler may be used alone or in combination of two or more. The shape of the inorganic filler is not limited to a spherical shape, and may also be a flake shape or a fibrous shape. The second inorganic filler contained in the second resin layer may be a spherical inorganic filler capable of easily obtaining fluidity from the viewpoint of embedding properties of electronic components.

Inorganic fillers can be surface modified. The method of surface modification is not particularly limited. The method using a silane coupling agent is simple, and can use a silane coupling agent having a wide variety of functional groups to easily impart desired characteristics. Examples of the silane coupling agent include alkyl silane, alkoxy silane, vinyl silane, epoxy silane, amino silane, acryl silane, methacryl silane, mercapto silane, sulfide silane, and isocyanate silane. , Thiosilanes, styrylsilanes, and alkylchlorosilanes.

Specific examples of the silane coupling agent include methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, methyltriethoxysilane, and methyltriethoxysilane. , Ethyltrimethoxysilane, n-propyltrimethoxysilane, diisopropyldimethoxysilane, isobutyltrimethoxysilane, diisobutyldimethoxysilane, isobutyltriethoxy Silane, n-hexyltrimethoxysilane, n-hexyltriethoxysilane, cyclohexylmethyldimethoxysilane, n-octyltriethoxysilane, n-dodecylmethoxysilane, phenyltrimethylsilane Oxysilane, diphenyldimethoxysilane, triphenylsilanol, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, n-octyldimethylchlorosilane, tetraethoxy Silane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3- (2-aminoethyl) aminopropyltrimethoxysilane, 3- (2-aminoethyl) Aminopropylmethyldimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethyl oxygen Silane, 3-glycidoxypropyltriethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, bis [3- (triethoxysilyl) propyl] Disulfide, bis [3- (triethoxysilyl) propyl] tetrasulfide, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrisulfide Isopropoxysilane, allyltrimethoxysilane, diallyldimethylsilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethyl Oxysilane, 3-methacryloxypropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltriethoxy Silyl, N- (1,3-dimethylbutylene) -3-aminopropyltriethoxysilane and aminosilane. These silane coupling agents may be used individually by 1 type, and may use 2 or more types together.

The average particle diameter of the inorganic filler is not particularly limited, and may be, for example, 0.01 to 50 μm. The average particle diameter of the inorganic filler can be measured, for example, by a laser diffraction scattering method.

The content of the first inorganic filler in the first resin layer may be 60% by mass or more, 70% by mass, or 80% by weight based on the total amount of the first resin layer as a reference. %the above. From the viewpoint of ensuring sufficient film formability, the content of the first inorganic filler in the first resin layer may be 95% by mass or less, 90% by mass or less based on the total amount of the first resin layer. 85 mass% or less.

The content of the second inorganic filler in the second resin layer may be 55% by mass or more and 65% by mass or more based on the total amount of the second resin layer from the viewpoint of the dimensional stability of the sealed molded product. Or 70% by mass or more. The content of the second inorganic filler in the second resin layer may be 95% by mass or less, 90% by mass or less based on the total amount of the second resin layer from the viewpoint of sufficiently ensuring the film formability. 85 mass% or less.

The first resin layer and the second resin layer may contain components other than the components described above. Such a component may be a component generally used for a sealing film. Examples thereof include antioxidants, flame retardants, ion trapping agents, pigments, dyes, silane coupling agents, and elastomers.

The sealing film may further include a film-shaped support. At this time, the first resin layer and the second resin layer may generally be sequentially provided from the support side. The support is not particularly limited as long as it can be removed after sealing, and it can be, for example, a polymer film or a metal foil.

Examples of the polymer film that can be used as a support include polyolefin films such as polyethylene films and polypropylene films; polyester films such as polyethylene terephthalate; polyvinyl chloride films; and polycarbonate Ester film; cellulose acetate film; polyimide film; polyimide film; and tetrafluoroethylene film. Examples of the metal foil that can be used as the support include copper foil and aluminum foil.

The film-shaped support may be formed by a release treatment in order to facilitate peeling. As a method of a mold release process, the method of apply | coating a mold release agent on the surface of a support body, and drying is mentioned, for example. Examples of the release agent include silicone-based, fluorine-based, and olefin-based release agents. The metal foil may be obtained by etching the surface with an acid or the like.

The thickness of the film-shaped support is not particularly limited, but may be 2 to 200 μm from the viewpoints of workability and drying properties when the resin layer is formed by coating. As long as the thickness of the support is 2 μm or more, when the varnish-like resin composition is applied in order to form a resin layer, there is less concern that the support is broken or the support is deformed due to the weight of the varnish-like resin composition. As long as the thickness of the support body is 200 μm or less, even when using a dryer that blows hot air from both the coating surface and the back surface, the varnish-like resin composition can be efficiently dried (removal of organic solvents). .

The sealing film may further include a protective layer (for example, a protective film) for the purpose of protecting the first resin layer and the second resin layer. The protective layer covers the main surface, which is located on the sealing resin layer (or the second resin). Layer) on the opposite side of the support. By providing a protective layer, the handleability of the sealing film can be improved, and when the sealing film is wound up, a trouble such as the resin layer sticking to the back surface of the support can be avoided.

The protective layer is not particularly limited, and for example, the same as the film-shaped support exemplified above can be used.

The thickness of the protective layer is not particularly limited, and may be, for example, 12 to 100 μm from the viewpoint of a sufficient protective effect and a reduction in thickness when the sealing film is wound into a roll shape.

The sealing film of this embodiment can be manufactured, for example, by forming the first resin layer and the second resin layer separately and bonding them together; or sequentially forming the first on a thin film support A resin layer and a second resin layer.

The first resin layer and the second resin layer can be formed by mixing respective constituent components and then forming a film of the obtained resin composition. The first resin layer and the second resin layer can also be formed by adding an organic solvent to the resin composition to be formed into a film to prepare a varnish-like resin composition, coating the support composition and drying the coating film. Resin layer. The application of the varnish-like resin composition to the support and the drying of the coating film can be performed continuously while supplying the support from the roll of the support, for example. The curing shrinkage of the first resin layer and the second resin layer can be adjusted by the drying conditions at this time.

The warpage of the sealed molded product obtained by using the sealing film can be evaluated using, for example, a substrate for evaluation in which a wafer-level package or a wafer-like package is produced. In this case, the embedding property of the semiconductor wafer can also be evaluated simultaneously.

Next, a method for manufacturing an electronic component device using the sealing film of this embodiment will be described. Hereinafter, an embodiment of a method for manufacturing a semiconductor device, which is a representative example of an electronic component and includes a semiconductor wafer, will be specifically described.

3 and 4 are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. The method of this embodiment includes the following steps: a temporary fixing step (FIG. 3 (a)), which temporarily attaches the temporary fixing material 40 to the substrate 30, and temporarily fixes the plurality of semiconductor wafers 20 to the temporary fixing material 40. The embedding step (FIGS. 3 (b) and (c)), which temporarily fixes the semiconductor wafer 20 and the sealing film (sealing resin layer) 10, and the sealing surface 2S of the semiconductor wafer 20 and the sealing resin layer 10 The semiconductor wafer 20 is overlapped in the oppositely arranged direction (the direction in which the sealing surface 2S of the second resin layer 2 is in contact with the semiconductor wafer 20), and in this state, the semiconductor wafer 20 is buried by pressing it under heating. In the sealing resin layer 10, the sealing film 10 includes a first resin layer 1 and a second resin layer 2 provided on the first resin layer 1; and a curing step (FIG. 3 (c)), which uses The sealing film 10 in which the semiconductor wafer 20 is embedded is hardened. By hardening, a sealing portion 10 a can be formed, which is composed of the hardened material 1 a of the first resin layer and the hardened material 2 a of the second resin layer, and can seal the semiconductor wafer 20. In the sealing portion 10a, the boundary between the hardened material 1a of the first resin layer and the hardened material 2a of the second resin layer may not be obvious.

In the method of this embodiment, the lamination method may be used to press the sealing film, or a compression mold method may be used.

The lamination used in the lamination method is not particularly limited, and examples thereof include laminations such as a roll type and a balloon type. Among these, from the viewpoint of further improving the embedding property, a bladder type capable of vacuum pressurization can be used.

The temperature (for example, the lamination temperature) for embedding the semiconductor wafer can be adjusted so that the sealing resin layer 10 (especially the second resin layer 2) can flow and can be embedded in the semiconductor wafer. This temperature is set to be lower than the softening point of the support when the support is provided. The temperature may be a temperature at or near the second resin layer exhibiting the lowest melt viscosity. The pressure used to embed the semiconductor wafer may vary according to the size or density of the semiconductor wafer (or electronic component), and may be, for example, 0.2 to 1.5 MPa or 0.3 to 1.0 MPa. The pressing time is not particularly limited, and may be 20 to 600 seconds, 30 to 300 seconds, or 40 to 120 seconds.

The hardening of the sealing resin layer (the first resin layer and the second resin layer) can be performed, for example, in the atmosphere or under an inert gas. The curing temperature is not particularly limited, and may be 80 to 280 ° C, 100 to 240 ° C, or 120 to 200 ° C. As long as the curing temperature is 80 ° C or higher, the sealing film can be sufficiently cured, and particularly, the occurrence of defects can be effectively suppressed. When the curing temperature is 280 ° C or lower, thermal damage to other materials can be suppressed. The curing time is not particularly limited, and may be 30 to 600 minutes, 45 to 300 minutes, or 60 to 240 minutes. As long as the curing time is within these ranges, the curing of the sealing resin layer can be sufficiently performed, and good production efficiency can be obtained. The curing conditions may be a combination of a plurality of conditions with different temperatures and / or times.

Embedding the electronic component (semiconductor wafer 20) in the sealing resin layer 10 and curing the sealing resin layer 10 to form the sealing portion 10a may be separate steps, or they may be performed simultaneously or continuously. For example, the sealing portion in which the electronic component is sealed can be formed by pressing the sealing resin layer and the electronic component while heating, burying the electronic component in the sealing resin layer, and curing the sealing resin layer.

In this embodiment, a semiconductor device can be obtained through the following steps of forming an insulating layer, forming a line pattern, ball mounting, and dicing. In order to perform these steps with high accuracy and efficiency, it is desirable that the warpage of the seal molded article 100 is small.

First, the temporary fixing material 40 is peeled from the substrate 30 to obtain a sealed molded article 100 (FIG. 4 (a)), which is composed of a semiconductor wafer 20 and a sealed portion 10a, which is sealed with a semiconductor Wafer 20. The semiconductor wafer 20 is exposed in one of the principal surfaces of the sealed molded article 100. An insulating layer 50 is provided on the main surface of the sealed molded article on which the semiconductor wafer 20 is exposed (Fig. 4 (b)). Then, the wiring 54 is formed by patterning the insulating layer 50, and solder balls 56 are mounted on the patterned insulating layer 52 (FIG. 4 (c)).

Then, the seal-molded article is singulated by the cutter 60 (Figs. 4 (d) and (e)). Thereby, it is possible to obtain a semiconductor device 200 including the semiconductor wafer 20 and a sealing portion 10 a which is a cured product of a sealing resin layer which is a sealing film of this embodiment. In the semiconductor device 200, the semiconductor wafer 20 is buried in the sealing portion 10 a in the sealing portion 10 a so as to be surrounded by the hardened material 2 a of the second resin layer.

As mentioned above, although suitable embodiment of the manufacturing method of the sealing film and the semiconductor device and the electronic component device in this invention was demonstrated, this invention is not limited to the said embodiment, It can also be implemented in the range which does not deviate from the meaning. Appropriate changes. [Example]

Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.

{Production of Sealing Film} The following materials were prepared as components constituting the sealing film. [Thermosetting resin] A1: Bisphenol F-type epoxy resin (manufactured by Mitsubishi Chemical Corporation, jER806 / epoxy equivalent: 160) [Hardener] B1: phenol novolac resin (manufactured by Asahi Organic Materials Industry Co., Ltd.) , PAPS-PN2 / hydroxy equivalent: 104) B2: Trimethane-type phenol resin (manufactured by Honshu Chemical Industry Co., Ltd., TrisP-HAP / hydroxy equivalent: 102) [inorganic filler] C1: silicon dioxide (Admatechs Co., Ltd. Manufacturing, SX-E2, aniline silane treatment / average particle size 5.8 μm) [Hardening catalyst] D1: imidazole (manufactured by Shikoku Chemical Industry Co., Ltd., 2PHZ-PW) [organic solvent] E1: methyl ethyl ketone

(Example 1) 497.5 g of an organic solvent E1 was placed in a 10 L (10 liter) plastic container, and 3500 g of an inorganic filler C1 was added thereto, and then the inorganic filler C 1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 300 g of thermosetting resin A1 and 460 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B1 were dissolved, 2.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film, so that each of the first resin layer or the second resin layer (thickness: 100 μm) is formed on the support. The coating and drying speed means the moving speed of the support. The temperature of the drying conditions and the furnace length respectively mean the temperature in the drying furnace and the moving distance of the support in the drying furnace. These conditions are the same in other examples and comparative examples. (First resin layer) Coating head method: comma. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m. (Second resin layer) Coating head method: Notch wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(Example 2) A varnish-like resin composition was produced in the same manner as in Example 1, except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(Example 3) A varnish-like resin composition was produced in the same manner as in Example 1 except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(Example 4) A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was applied to a film-shaped support (38 μm thick polyethylene terephthalate) under the following conditions, and the coating film was dried to obtain A first resin layer (thickness: 100 μm) was formed on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support.

Coating head method: corner wheel type. Coating and drying speed: 2.5m / minute. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

(Example 5) A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

In a 10L plastic container, 497.5 g of an organic solvent E1 was placed, and 3500 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 296 g of thermosetting resin A1 and 464 g of hardener B2 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B2 were dissolved, 2.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

(Example 6) In a 10L plastic container, 497.5 g of an organic solvent E1 was placed, and 3350 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 360 g of thermosetting resin A1 and 550 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the curing agent B1 were dissolved, 3.0 g of the curing catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

In a 10L plastic container, 497.5 g of an organic solvent E1 was placed, and 3200 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 419 g of thermosetting resin A1 and 641 g of hardener B1 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B1 were dissolved, 3.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

(Comparative Example 1) Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate). Each of the first resin layer and the second resin layer (thickness: 100 μm) was formed on the support by passing the support and the coating film through a drying furnace at a specific drying rate, thereby drying the coating film. (First resin layer) Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m. (Second resin layer) Coating head method: Notch wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(Comparative Example 2) Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate). The support and the coating film were passed through a drying furnace at a specific drying rate, thereby drying the coating film to form a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

A varnish-like resin composition was produced in the same manner as in Example 1 except that the amount of the curing catalyst D1 was changed from 2.5 g to 7.5 g. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace, thereby drying the coating film to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 110 ° C / 3.3m, 130 ° C / 3.3m, 140 ° C / 3.3m.

The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(Comparative Example 3) A varnish-like resin composition was produced by the same method as in Example 1. Using a coater, the obtained varnish-like resin composition was coated on a thin-film support (38 μm thick polyethylene terephthalate) under the following conditions, and the support and the coating film were coated with A specific drying rate is passed through a drying furnace to dry the coating film, thereby forming a first resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

Using a coater and using the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate), and the support and The coating film was passed through a drying furnace at a specific drying rate, and the coating film was dried to form a second resin layer (thickness: 100 μm) on the support. Coating head method: corner wheel type. Coating and drying speed: 1.5m / minute. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

The first resin layer and the second resin layer were bonded by a vacuum laminator to obtain a sealing film having a sealing resin layer. The sealing resin layer had a two-layer structure including a first resin layer and a second resin layer.

(Comparative Example 4) Using a coater and applying the following conditions, the same varnish-like resin composition as in Example 1 was applied to a film-shaped support (38 μm thick polyethylene terephthalate). A resin layer (thickness: 100 μm) was formed on the support by passing the support and the coating film through a drying furnace at a specific drying rate, thereby drying the coating film. Coating head method: corner wheel type. Coating and drying speed: 2m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

The obtained two resin layers were bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a single-layer structure having a thickness of 200 μm.

(Comparative Example 5) In a 10-liter plastic container, 497.5 g of an organic solvent E1 was placed, and 3500 g of an inorganic filler C1 was added thereto, and then the inorganic filler C1 was dispersed in the organic solvent with a stirring blade. To this dispersion, 296 g of thermosetting resin A1 and 464 g of hardener B2 were added, and the dispersion was stirred. After visually confirming that the thermosetting resin A1 and the hardener B2 were dissolved, 2.5 g of the hardening catalyst D1 was added, and the dispersion was further stirred for 1 hour. The dispersion was filtered through a nylon # 200 mesh (mesh, pore size: 75 μm) to obtain a filtrate as a varnish-like resin composition.

Using a coater, the obtained varnish-like resin composition was applied to a film-shaped support (38 μm thick polyethylene terephthalate) under the following conditions, and the coating film was dried to obtain A resin layer (thickness: 100 μm) was formed on the support. Coating head method: corner wheel type. Coating and drying speed: 3m / min. Drying conditions (temperature / furnace length): 90 ° C / 3.3m, 110 ° C / 3.3m, 120 ° C / 3.3m.

The obtained two resin layers were bonded together by a vacuum laminator to obtain a sealing film having a sealing resin layer having a single-layer structure having a thickness of 200 μm.

Table 1 shows the blending amount, thickness, drying speed, drying conditions, and curing shrinkage of the resin composition in each example.

[Table 1]

[Evaluation Test] (Hardening Shrinkage Ratio) The support of the sealing film made of each of the above Examples and Comparative Examples was peeled to obtain an evaluation sample for measuring the hardening shrinkage ratio. The hardening shrinkage (%) was measured using a PVT tester (manufactured by Toyo Seiki Seisakusho Co., Ltd.) under the following conditions. The results are shown in Tables 1 and 2. Evaluation sample quality: 8g. Heating conditions: The temperature was raised from 40 ° C to 140 ° C, and it was held at 140 ° C for 2 hours, and then cooled to room temperature (23 ° C). Pressure: 3MPa. Cylinder diameter: 11.284 mm (area: 1.0 cm ² ).

(Warpage and wafer embedding property) A SUS (stainless steel) plate having a diameter of 220 mm and a thickness of 1.5 mm was prepared as a support. Using a laminator, the film for temporary fixing was bonded to one side of the SUS board. Using a cutter, remove the film for temporary fixation beyond the SUS plate.

Then, a silicon wafer having a thickness of 7.3 mm × 7.3 mm and a thickness of 150 μm was arranged in a grid shape on the temporary fixing film to obtain a substrate for evaluation. The number of mounted silicon wafers was 193, and the pitch of the silicon wafers was set to 9.6 mm in both the vertical and horizontal directions. A silicon sorter (a CAP3500 (commercial model) manufactured by Canon Machinery Co., Ltd.) was used when arranging silicon wafers, and the load during the configuration was set to 1 kgf per silicon wafer.

The sealing resin layers of the respective sealing films made in the examples and comparative examples were superimposed on the prepared evaluation substrate with the second resin layer facing the silicon wafer side, and were used in this state. The vacuum laminator presses the sealing resin layer and the silicon wafer while heating, thereby burying the silicon wafer in the sealing resin layer and thermally curing the sealing resin layer to form a sealing portion in which the silicon wafer is sealed. The film for temporary fixation was peeled from the obtained sealed molded article, and the silicon wafer side face down, and the direction of warpage of the sealed molded article and the warpage from the bottom surface to the portion with the largest warpage were measured with a ruler. the amount. The warping direction is "convex", which means that the seal portion side is warped in a convex direction.

The surface of the silicon wafer side of the sealing molded article after peeling off the film for temporary fixing was visually confirmed, and the wafer embedding property was judged based on whether the resin was filled between the silicon wafers. A case where there is no unfilled portion is judged as "good". In Comparative Example 1, since there was a problem of embedding property, evaluation of warpage was not performed.

[Table 2]

[table 3]

The evaluation results are shown in Tables 2 and 3. According to the sealing film of the embodiment, the silicon wafer can be sealed with a good embedding property, and the warpage of the sealed molding can be sufficiently suppressed. In this embodiment, the curing shrinkage of the second resin layer is larger than that of the first resin layer. Hardening shrinkage.

1‧‧‧first resin layer

1a‧‧‧hardened product of the first resin layer

2‧‧‧second resin layer

2a‧‧‧hardened product of second resin layer

3‧‧‧resin sealing material

3a‧‧‧hardened material of resin sealing material

10‧‧‧sealing film (sealing resin layer)

10a‧‧‧hardened product of sealing resin layer

20‧‧‧Semiconductor wafer

30‧‧‧ substrate

40‧‧‧Temporary fixing material

50‧‧‧ Insulation

52‧‧‧ patterned insulation

54‧‧‧ route

56‧‧‧Solder Ball

60‧‧‧Cutting Machine

100‧‧‧Sealed molding

200‧‧‧ semiconductor device

2S‧‧‧Sealing surface

FIG. 1 is a schematic cross-sectional view showing a sealing film according to an embodiment. Fig. 2 (a) is a schematic cross-sectional view of a sealed molded article after a semiconductor wafer is sealed with a conventional single-layer sealing film; Fig. 2 (b) is a semiconductor film sealed with a sealing film of an embodiment having different curing shrinkage A schematic cross-sectional view of the sealed molded product after the wafer. FIG. 3 is a schematic cross-sectional view for explaining an embodiment of a method of manufacturing a semiconductor device. FIG. 4 is a schematic cross-sectional view illustrating an embodiment of a method for manufacturing a semiconductor device.

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Claims (8)

A sealing film for sealing electronic parts. The sealing film includes a sealing resin layer including a first resin layer and a second resin layer. The first resin layer contains a first thermosetting resin and a first inorganic resin. A filler, the second resin layer containing a second thermosetting resin and a second inorganic filler; wherein the second resin layer has a sealing surface that faces the electronic component side when the electronic component is sealed, and The second resin layer and the first resin layer are sequentially laminated from the sealing surface side; the curing shrinkage rate of the second resin layer is greater than the curing shrinkage rate of the first resin layer. The sealing film according to claim 1, wherein the ratio of the curing shrinkage ratio of the second resin layer to the curing shrinkage ratio of the first resin layer exceeds 1 and is less than 10. The sealing film according to claim 1 or 2, wherein the first thermosetting resin and the second thermosetting resin are the same epoxy resin or mutually different epoxy resins. An electronic component device manufacturing method comprising: a step of embedding an electronic component, under heating, applying a sealing resin layer of the sealing film according to any one of claims 1 to 3, and a sealing resin layer with the sealing resin layer; The sealing surface is pressed against the electronic component disposed to embed the electronic component in the sealing resin layer; and a step of forming a sealing portion that hardens the sealing resin layer to form a hardened material of the sealing resin layer. That is, the sealing portion in which the aforementioned electronic component is sealed. The method for manufacturing an electronic component device according to claim 4, wherein the electronic component includes a semiconductor wafer. An electronic component device comprising an electronic component and a sealing portion that seals the electronic component, wherein the sealing portion is a cured product of a sealing resin layer of the sealing film according to any one of claims 1 to 3. The electronic component device according to claim 6, wherein the electronic component includes a semiconductor wafer. The electronic component device according to claim 6, wherein the electronic component is surrounded by the hardened material of the second resin layer in the sealing portion.