TW201901879A - Warpage correction material and manufacturing method of fan-out wafer level package - Google Patents

Abstract

To provide a warpage correction material which can adjust the amount of warpage even at the temperature at which a fan out-type wafer level package (FO-WLP) is mounted, and at room temperature at which, for example, wafer transportation is performed, and thereby reduce the warpage of the WLP. This warpage correction material for a fan out-type wafer level package is characterized by comprising a curable resin composition including a component that is curable by means of an active energy ray and heat, wherein when the warpage correction material is formed into a flat film-shaped cured product by curing the warpage correction material by means of the active energy ray and heat, and the linear expansion coefficient [alpha] (ppm/DEG C) at 25 DEG C, the elastic modulus [beta] (GPa) at 25 DEG C, and the thickness [gamma] ([mu]m) of the cured product satisfy the following relational expression: 2000 ≤ [alpha]*[beta]*[gamma] ≤ 10000.

Description

Warpage correction material and fan-out wafer-level packaging manufacturing method

The present invention relates to a fan-out type warpage correction material for a fan-out type wafer-level package in which a layout area of an external connection electrode is larger than that of a semiconductor.

In recent years, the demand for miniaturization has increased in the fields of semiconductor circuits, etc. In order to meet the requirements, semiconductor circuits have been mounted in a manner close to the chip size package (Chip Size Package). As one of the means for realizing chip size packaging, there has been proposed a packaging method called wafer level package (Wafer Level Package (hereinafter abbreviated as WLP)) for bonding and fragmentation at a wafer level. . WLP has attracted attention because it can contribute to cost reduction and miniaturization. WLP is mounted on the circuit board on which the electrodes are formed by face down.

However, with the miniaturization and high integration of semiconductor wafers, the number of electrodes (terminals, bumps) for external connection of the semiconductor wafer tends to increase. Therefore, the pitch of the electrodes for external connection of the semiconductor wafer ) Has a tendency to shrink. However, it is not always easy to mount the bump-formed semiconductor wafer directly on the circuit board at a fine pitch.

For the above-mentioned problems, it is proposed to form a region for forming a semiconductor sealing material on the outer periphery of the semiconductor wafer, and also provide a rewiring layer or lead frame (hereinafter also referred to as "rewiring layer", etc.) connected to the electrode for semiconductor In the area of the sealing material, increase the distance between the bumps. Such a WLP is called a fan-out wafer-level package (hereinafter referred to as FO-WLP for short) because it increases the size of the bump placement area relative to the size of the semiconductor chip.

In FO-WLP, semiconductor wafers are embedded with semiconductor sealing materials. The circuit surface of the semiconductor wafer is exposed to the outside, forming a boundary between the semiconductor wafer and the semiconductor sealing material. Even in the region of the semiconductor sealing material embedded in the semiconductor wafer, a rewiring layer and the like connected to the electrodes of the semiconductor wafer are provided, and the bumps are electrically connected to the electrodes of the semiconductor wafer through the rewiring layer and the like. The pitch of the bumps can be set larger than the pitch of the electrodes of the semiconductor wafer.

It is also considered that not only semiconductor wafers but also a plurality of electronic components made of the same kind or different kinds can be accommodated in one package, or a plurality of semiconductor wafers can be embedded in a semiconductor sealing material to become one semiconductor component. In such a package, a plurality of electronic parts are embedded by a semiconductor sealing material. In a semiconductor sealing material embedded in a plurality of electronic parts, a rewiring layer and the like connected to the electrodes of the electronic parts are provided, and the bumps are electrically connected to the electrodes of the electronic parts through the rewiring layer and the like. Even in this case, since the size of the bump arrangement area is larger than the size of the semiconductor wafer, it can be called FO-WLP.

In such a package, generally, a semiconductor wafer or an electronic component is arranged at a certain interval on the support, and the semiconductor sealing material is used to embed it, the sealing material is heated and hardened, and then peeled from the support to produce a pseudo wafer ( pseudo wafer). Next, a redistribution layer and the like are formed in the semiconductor sealing material region that expands from the semiconductor wafer circuit surface of the pseudo-wafer. By doing so, the pitch of the bumps can be set larger than the pitch of the electrodes of the semiconductor wafer.

In the formation of the redistribution layer, in general, a positive-type inductive resin is coated on the semiconductor wafer circuit surface of the pseudo-wafer and pre-baked, and the active light such as UV light is irradiated through the mask to the area to be opened Next, develop using TMAH (tetramethyl ammonium hydroxide) or other developing solution, perform heat curing, oxygen plasma treatment, etc., perform metal electrode sputtering, and then form a photoresist layer to pattern the wiring and A redistribution layer is formed (for example, Japanese Patent Laid-Open No. 2013-38270, etc.). On the other hand, in the formation of lead frames, thin metal plates are formed in batches by die cutting and bending pressing by etching techniques or stamping processes.

In WLP or FO-WLP, when the redistribution layer is formed on the circuit surface of the semiconductor wafer, the circuit surface (that is, the insulation is formed mainly due to the shrinkage of the insulating film of photosensitive polyimide or the like between the wirings during curing The surface of the film) is warped and deformed into a concave shape. In addition, the sealing material sealed on the surface opposite to the redistribution layer or the lead frame shrinks due to hardening, and the circuit surface becomes warped and deformed in a convex shape. In order to reduce this amount of warpage, it has been proposed to form a resin layer on one surface of a substrate made of a wafer-shaped semiconductor, bend and hold the entire area of the resin layer in a spherical expansion manner, and hold the resin layer. Hardening (for example, Japanese Unexamined Patent Publication No. 2012-178422). In addition, regarding the warpage of FO-WLP, for example, it is described in US Patent Publication No. 2010/0252919. Since warpage occurs in FO-WLP that makes the semiconductor wafer surface side concave, the amount of warpage is predicted to A polymer film with the same amount of warpage and warpage in the opposite direction is provided on the side opposite to the surface of the semiconductor wafer, and the semiconductor device is manufactured by eliminating the warpage. Furthermore, in the semiconductor device of the flip-chip method, it has been proposed to focus on the product of the linear expansion coefficient and the elastic index of the underfill (stress index) to improve the reliability of the semiconductor device (for example, JP 2013- 8896).

[Problems to be solved by the invention]

Compared with the conventional WLP, the thickness of the FO-WLP package is thin, so it is easily affected by the stress generated when the redistribution layer is formed. Therefore, the package is easier to warp than the previous package. Also, as proposed in Japanese Patent Laid-Open No. 2012-178422, a WLP provided with a rewiring layer on only one side is heated to suppress the amount of warpage, and when heated to the mounting temperature of WLP (eg, 260 ° C), the rewiring layer Or the sealing material will expand and cause the package to warp. As a result, there is a problem that peeling occurs between layers in the package, or a part of the terminals is not easily connected during mounting. On the other hand, in order to suppress the warpage of the package during the installation of WLP, if it is adjusted in such a way that the amount of warpage or the sealing material can be suppressed at the installation temperature of WLP, when the package is cooled to room temperature, The redistribution layer containing the insulating film shrinks, causing the wafer to warp. As a result, there is a problem that wafer transfer becomes difficult, or a slight impact due to stress applied to the wafer increases the risk of cracking. Also, as described in US Patent Publication No. 2010/0252919, if the warpage is predictable, the warpage should be corrected, but as mentioned above, it is not only in the manufacturing stage of the pseudo wafer, but also in the installation of WLP Warp may also occur during heating, so it cannot correspond to the situation where the degree of warpage will change. In addition, the method described in US Patent Publication No. 2010/0252919 is to give the opposite warp in advance during the fabrication of the pseudo wafer, so that the micro-processing when the redistribution layer is provided may become difficult. Furthermore, Japanese Unexamined Patent Publication No. 2013-8896 focuses on the invention of underfills, and does not consider the warpage of WLP at all.

Therefore, the object of the present invention is to provide an amount of warpage that can be adjusted even at the temperature when the fan-out wafer-level package (FO-WLP) is installed or at room temperature such as wafer transfer To reduce the warpage correction material of WLP warpage.

In order to solve the above-mentioned problems, it can be said that it is desired that the warpage correction layer is provided on the FO-WLP, and the warpage amount can be suppressed at the temperature when the semiconductor package is mounted or at room temperature such as wafer transfer. . Then, the results of the review by the inventors clearly understood that as the parameters of the warp stress of the adjustable warpage correction material, the linear expansion coefficient, the elastic modulus, and the film thickness of the hardened product of the warpage correction material are closely related to each other. relationship. Then, as a result of further review, the following insights were obtained: as long as the linear expansion coefficient, elastic modulus, and film thickness have a certain relationship, even at the temperature when the semiconductor package is mounted, or at room temperature such as wafer transfer In addition, while suppressing the amount of warpage, the amount of warpage of the FO-WLP can be adjusted while reducing the warpage of the wafer or even the package. The present invention is based on such insights.

In addition, the present inventors have found that the use of a warpage correcting material that can be cured by both active energy rays and heat like a curable resin composition can effectively cause warpage stress in the warpage correcting material. It is further known that the warpage stress can be controlled according to the degree of hardening when the curable resin composition is hardened, and the degree of hardening is related to the absolute value of the difference between the gloss of the surface and the interface when the hardened film is made . Then, the following insight was obtained: as long as the difference in glossiness is within a certain range, a moderate warpage stress can be generated by the warpage correction material.

[1]. The warpage correction material obtained by the first embodiment of the present invention is a warpage correction material for fan-out wafer-level packaging, and is characterized in that it includes active energy rays and heat. When the curable resin composition of the hardened component is formed into a flat film-like hardened product by curing the aforementioned warpage correction material with active energy rays and heat, the linear expansion coefficient of the hardened product at 25 ° C α (ppm / ° C), elastic modulus at 25 ° C β (GPa), and thickness γ (μm) satisfy the following relational expression, 2000 ≦ α × β × γ ≦ 10000. [2]. The warpage correction material obtained by the second embodiment of the present invention is the warpage correction material described in [1] above, wherein the aforementioned γ (μm) is in the range of 15 to 50. [3]. The warpage correction material obtained by the third embodiment of the present invention is the warpage correction material described in [1] or [2] above, wherein the curable resin composition contains at least a compound having a hydroxyl group and For the compound having an isocyanate group, the molar ratio of the hydroxyl group in the compound having the hydroxyl group to the isocyanate group of the compound having the isocyanate group (hydroxyl group / isocyanate group) is 0.1 to 0.9. [4]. The warpage correction material obtained by the fourth embodiment of the present invention is the warpage correction material described in [3] above, wherein the compound having a hydroxyl group or the compound having an isocyanate group has at least one Isocyanuric group (isocyanuric group) or benzene ring. [5]. The warp correction material obtained by the fifth embodiment of the present invention is the warp correction material described in [3] or [4] above, wherein the compound having a hydroxyl group or the compound having an isocyanate group is Has at least one isocyanurate group or benzene ring. [6]. A method for manufacturing a fan-out wafer-level package obtained by the sixth embodiment of the present invention, which uses the fan-out of the warpage correction material described in any one of the above [1] to [5] The manufacturing method of the wafer-level package includes: The warpage correction material is applied to the surface on the same side or the opposite side of the surface of the virtual wafer where the redistribution layer is formed to form a coating film, The active energy ray and heat harden the aforementioned coating film to form a warpage correction layer. [7]. The manufacturing method obtained by the seventh embodiment of the present invention is the manufacturing method described in [6] above, wherein the coating is performed by an inkjet method. [8]. The manufacturing method obtained by the eighth embodiment of the present invention is the manufacturing method described in [6] or [7] above, wherein the thickness of the warpage correction layer is in the range of 15 to 50 μm. [9]. The manufacturing method obtained by the ninth embodiment of the present invention is the manufacturing method described in any one of the above [6] to [8], wherein the hardening by active energy ray and heat is as follows The method is to apply the warpage correction material to a silicon wafer of JEITA specification and harden it with an active energy ray and heat to make it into a flat film-shaped hardened product, and then make the 60 ° mirror surface The absolute value of the difference between the reflectance and the 60 ° specular reflectance at the interface between the hardened material and the silicon wafer becomes 10% or less.

According to the present invention, by using the warpage correction material made of the following curable resin composition, warpage can be suppressed even at the temperature when mounting a semiconductor package or at room temperature such as wafer transfer At the same time as the curvature, the warpage of the wafer and even the package can be adjusted while reducing the warpage of the wafer and even the package. The curable resin composition is linear expansion coefficient and elastic modulus when it is made into a cured product. , And thickness have the specified relationship. As a result, a semiconductor package with high quality reliability can be obtained.

[Best form for carrying out the invention]

<Warpage Correction Material> The warpage correction material obtained by the present invention is a material for forming a warpage correction layer, and is made of a curable resin composition containing components that can be hardened by active energy rays and heat The successor. In the manufacture of FO-WLP, the insulating layer is placed on the circuit forming surface of the pseudo-wafer together with the redistribution layer, etc. However, the amount of warpage of the pseudo-wafer depends not only on the redistribution layer but also on the insulation film. The material, thickness, pattern, material and thickness of the sealing material vary. Here, it is believed that as long as the stress can be generated and acted on the FO-WLP by the warpage correction layer (which is caused by the shrinkage stress of the redistribution layer, the shrinkage stress of the insulating layer, or the shrinkage stress of the sealing material) For the same degree of shrinkage stress, the warpage of FO-WLP can be suppressed. In the present invention, it has been found that a warp correction material made of a curable resin composition that can be hardened by active energy rays and heat as described above, and that the warp correction material is hardened by active energy rays and heat When it becomes a flat film-shaped cured product, the linear expansion coefficient α (ppm / ℃) of the cured product at 25 ° C, the elastic modulus β (GPa) at 25 ° C, and the thickness γ (μm) are adjusted to satisfy The method of the following relational expression can suppress the amount of warpage even at the temperature when the semiconductor package is mounted, or at room temperature such as wafer transfer, etc. 2000 ≦ α × β × γ ≦ 10000. That is, in order to eliminate the shrinkage stress of the redistribution layer, the insulating layer, or the sealing material, the warpage correction layer exerts the shrinkage stress. As a result, even at the temperature when the semiconductor package is mounted, or in the wafer transfer room, etc. Under the temperature, the amount of warpage can be suppressed, while the amount of warpage of the wafer or the package can be adjusted while reducing the warpage of the wafer or the package, and a semiconductor package with high quality reliability can be obtained. This is ultimately the inventor's guess, and the invention is not limited to this theory. In addition, the warpage correction material obtained by the present invention may be provided on the surface opposite to the surface on which the FO-WLP is provided with the redistribution layer, etc., but may also be provided on the surface on the same side due to balance. Hereinafter, each component constituting the curable resin composition obtained according to the present invention will be described.

As an essential component contained in the curable resin composition constituting the warpage correcting material, a component curable by active energy rays can be exemplified by a curable component curable by a radical addition polymerization reaction. Specific examples of the radical addition polymerization reactive component having one or more ethylenically unsaturated groups in the molecule include conventionally known polyester (meth) acrylate and polyether (meth) acrylic acid. Ester, urethane (meth) acrylate, carbonate (meth) acrylate, epoxy (meth) acrylate, etc. Specific examples include: diacrylates of glycols such as ethylene glycol, methoxytetraethylene glycol, polyethylene glycol, and propylene glycol; N, N-dimethylacrylamide, N-hydroxymethyl Acrylamides such as acrylamide, N, N-dimethylaminopropyl acrylamide, etc .; N, N-dimethylaminoethyl acrylate, N, N-dimethylaminopropyl Aminoalkyl acrylates such as acrylates; hexylene glycol, trimethylolpropane, pentaerythritol, dipentaerythritol, ginsyl-hydroxyethyl isocyanurate and other polyols or such ethylene oxide additions Polyacrylates such as products, propylene oxide adducts, or epsilon-caprolactone adducts; phenoxy acrylate, bisphenol A diacrylate, and phenol ethylene oxide addition of these Polyacrylates such as products or propylene oxide adducts; glycerol diglycidyl ether, glycerol triglycidyl ether, trimethylolpropane triglycidyl ether, triglycidyl isocyanurate, etc. Polyacrylic esters of glyceryl ether; in addition to the foregoing, polyether polyols, polycarbonate diols, hydroxyl-terminated polybutadiene, polyester polyols and other polyols can also be directly acrylated, Or at least one of acrylates and melamine acrylates urethane acrylated with diisocyanate, and methacrylates corresponding to the aforementioned acrylates.

In addition to the above, as the hardening component that can be hardened by radical addition polymerization, compounds such as the following (1) to (11) can also be used, and they can be used alone or in combination of two or more. Or it can be used in combination with a monomer having one or more ethylenic unsaturated groups in the molecule. (1) A compound having a plurality of phenolic hydroxyl groups in one molecule is reacted with an alkylene oxide to obtain a reaction product, a monocarboxylic acid containing an unsaturated group is reacted with the reaction product, and then the polyanhydride is reacted with the compound Unsaturated group-containing polymer obtained by reaction of the obtained reaction product; (2) reacting a difunctional or more polyfunctional epoxy resin with (meth) acrylic acid to add to the hydroxyl group present in the side chain A diacid-containing polymer containing an acryl group; (3) The hydroxy group of the difunctional epoxy resin is further epoxidized with epichlorohydrin to become a multifunctional epoxy resin, so that (meth) acrylic acid and A functional epoxy resin reacts, and then a dibasic acid anhydride is added to the generated hydroxyl group to form a polymer containing an acryl group; (4) A compound having a plurality of phenolic hydroxyl groups in one molecule is reacted with a cyclic carbonate compound The reaction product, an unsaturated group-containing polymer obtained by reacting an unsaturated group-containing monocarboxylic acid with the reaction product, and then reacting the polybasic acid anhydride with the obtained reaction product; (5) By diisocyanate 、 Acrylamide-containing amino acid formed by polyaddition reaction with (meth) acrylate of difunctional epoxy resin or its partial anhydride modification, diethylene glycol compound containing carboxyl group and diol compound Ester resin; (6) unsaturated group-containing polymer obtained by copolymerization of unsaturated carboxylic acid and unsaturated group-containing compound; (7) in diisocyanate and diethylene glycol containing carboxyl group In the synthesis of a resin obtained by polyaddition reaction of a compound and a diol compound, a compound having one hydroxyl group and one or more (meth) acryloyl group in the molecule is added, and the terminal (meth) acrylic compound obtained Acrylate-containing urethane resin containing acryl; (8) In the synthesis of resin obtained by polyaddition reaction of diisocyanate, diethylene glycol compound containing carboxyl group and diol compound, add A compound having one isocyanate group and one or more (meth) acryloyl groups in the molecule, and the resulting (meth) acryloyl group-containing urethane resin containing acryl groups; ( 9) In the synthesis of the resin of (5) above, a compound having one hydroxyl group and one or more (meth) acryloyl groups in the molecule is added, and the terminal (meth) acryloyl group is obtained Carbamate resins containing acrylic groups; (10) In the synthesis of the resin of (5) above, a compound having one isocyanate group and one or more (meth) acryloyl groups in the molecule is added , And the terminal (meth) acryloyl group-containing acryloyl group-containing carbamate resin; and (11) For the resins of (1) to (10) above, there is one more in 1 molecule A compound composed of an epoxy group and one or more (meth) acryloyl groups, and a polymer containing an acryloyl group obtained.

Examples of the polymerization initiator for the radical addition polymerization reaction that causes the curable component by active energy rays include bis- (2,6-dichlorobenzyl) phenylphosphine oxide and bis -(2,6-dichlorobenzyl) -2,5-dimethylphenylphosphine oxide, bis- (2,6-dichlorobenzyl) -4-propylphenylphosphine oxide, Bis- (2,6-dichlorobenzyl) -1-naphthylphosphine oxide, bis- (2,6-dimethoxybenzyl) phenylphosphine oxide, bis- (2,6- (Dimethoxybenzyl) -2,4,4-trimethylpentylphosphine oxide, bis- (2,6-dimethoxybenzyl) -2,5-dimethylphenyl Phosphine oxide, bis- (2,4,6-trimethylbenzyl) -phenylphosphine oxide (Omnirad 819, 2,6-dimethoxybenzyl diphenylphosphine oxide manufactured by IGM Resins) , 2,6-dichlorobenzyl diphenyl phosphine oxide, 2,4,6-trimethyl benzyl phenyl phosphonic acid methyl ester, 2-methyl benzoyl diphenyl phosphine oxide Phosphine, isopropyl trimethylacetoxyphenylphosphonate, 2,4,6-trimethylbenzyldiphenylphosphine oxide (Omnirad TPO manufactured by IGM Resins), etc. acylphosphine oxide); 1-hydroxy-cyclohexyl phenyl ketone, 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propane-1-one, 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propane-1-one, 2-hydroxy-2 -Hydroxyacetophenones such as methyl-1-phenylpropane-1-one; benzoin, benzyl, benzoin methyl ether, benzoin ethyl ether, benzoin n-propyl ether , Benzoin isopropyl ether, benzoin n-butyl ether and other benzoins; benzoin alkyl ethers; benzophenone, p-methylbenzophenone, Michlerone , Methylbenzophenone, 4,4'-dichlorobenzophenone, 4,4'-bisdiethylaminobenzophenone and other benzophenones; acetophenone, 2,2 -Dimethoxy-2-phenylacetophenone, 2,2-diethoxy-2-phenylacetophenone, 1,1-dichloroacetophenone, 1-hydroxycyclohexylphenylketone, 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinyl-1-acetone, 2-benzyl-2-dimethylamino-1- (4-morpholine Phenyl) -butanone-1, 2- (dimethylamino) -2-[(4-methylphenyl) methyl) -1- [4- (4-morphoyl) phenyl] Acetophenones such as -1-butanone, N, N-dimethylaminoacetophenone; thioxanthone, 2-ethylthioxanthone, 2-isopropylthioxanthone, 2,4- Thioxanthones such as dimethylthioxanthone, 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone; anthraquinone, chloroanthraquinone, Anthraquinones such as 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 1-chloroanthraquinone, 2-pentylanthraquinone, 2-aminoanthraquinone; styrene Ketone dimethyl Ketones such as ketones and benzyl dimethyl ketals; ethyl-4-dimethylaminobenzoate, 2- (dimethylamino) ethylbenzoate, p-dimethyl Benzoic acid esters such as ethyl benzoic acid ethyl ester; 1,2-octanedione, 1- [4- (phenylthio)-, 2- (O-benzoyl oxime)], ethyl ketone, Oxime esters such as 1- [9-ethyl-6- (2-methylbenzyl) -9H-carbazol-3-yl]-, 1- (O-acetoxyxime); bis ( η5-2,4-cyclopentadien-1-yl) -bis (2,6-difluoro-3- (1H-pyrrol-1-yl) phenyl) titanium, bis (cyclopentadiene) -bis [2,6-difluoro-3- (2- (1-pyrrol-1-yl) ethyl) phenyl] titanium and other titanium hydrides; phenyl disulfide 2-nitrostilbene, butadiene, anise Azo diethyl ether, azobisisobutyronitrile, tetramethylthiuram disulfide. These photopolymerization initiators can be used alone or in combination of two or more.

Among the above-mentioned photopolymerization initiators, it is preferable to use α-aminoacetophenones selected from one of oxime esters (hereinafter referred to as “oxime ester-based photopolymerization initiators”) and acetophenones (Hereinafter referred to as "α-aminoacetophenone-based photopolymerization initiator"), and acylphosphine oxides (hereinafter referred to as "acylphosphine oxide-based photopolymerization initiator") 1 More than one kind of photopolymerization initiator.

As the oxime ester-based photopolymerization initiator, commercially available products include CGI-325 manufactured by BASF Japan Co., Ltd., Irgacure OXE01, Irgacure OXE02, and N-1919 manufactured by ADEKA Corporation. In addition, a photopolymerization initiator having two oxime ester groups in the molecule can also be suitably used. The compounding amount of the oxime ester-based photopolymerization initiator is preferably 0.01 to 5 parts by mass relative to 100 parts by mass of the radical addition polymerization reactive component having one or more ethylenic unsaturated groups in the molecule. .

As the α-aminoacetophenone-based photopolymerization initiator, specific examples include 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinylacetone-1, 2-benzyl-2-dimethylamino-1- (4-morpholinylphenyl) -butane-1-one, 2- (dimethylamino) -2-[(4-methyl Phenyl) methyl] -1- [4- (4-morpholinyl) phenyl] -1-butanone, N, N-dimethylaminoacetophenone, etc. As for the commercially available products, Omnirad 907, Omnirad 369, Omnirad 379, etc., manufactured by IGM Resins, can be cited.

Examples of the amide phosphine oxide-based photopolymerization initiator include the above-mentioned compounds. As for commercially available products, Omnirad TPO and Omnirad 819 manufactured by IGM Resins can be mentioned.

The amount of the photopolymerization initiator other than the oxime ester-based photopolymerization initiator is preferably 100 parts by mass of the radical addition polymerization reactive component having one or more ethylenic unsaturated groups in the molecule. 0.1 to 30 parts by mass. When it is 0.1 parts by mass or more, the photocurability of the curable resin composition is good, the coating film is less likely to peel off, and the coating film characteristics such as chemical resistance are also good. On the other hand, in the case of 30 parts by mass or less, the effect of reducing out gas can be obtained, and further, the light absorption on the surface of the solder resist coating film becomes good, and the deep hardenability is not easily reduced. It is preferably 0.5 to 15 parts by mass.

As a photopolymerization initiator that causes radical addition polymerization by active energy rays, when an oxime ester-based photopolymerization initiator is used, sufficient sensitivity can be obtained even in a small amount, not only In this way, if a thermosetting component is blended, the photopolymerization initiator will evaporate less during the thermosetting process and during the subsequent heat steps during installation, so that the pollution of equipment such as a drying furnace can be reduced.

In addition, in the case of using an acylphosphine oxide-based photopolymerization initiator, it is possible to improve the deep curing property at the time of photoreaction, so a good opening shape can be obtained in resolution.

Either the oxime ester-based photopolymerization initiator or the amide-based phosphine oxide-based photopolymerization initiator is effective, as is the point of the linear shape of the resist and the balance of the openings and the photocurability In other words, it is more suitable to use the oxime ester-based photopolymerization initiator and the acetylphosphine oxide-based photopolymerization initiator together.

In addition, as a photopolymerization initiator that causes radical addition polymerization by active energy rays, commercially available products can be used, and for example, JMT- manufactured by Yueyang Kimoutain Sci-tech Co. Ltd. can be suitably used. 784.

As components that can be hardened by heat contained in the curable resin composition, amine resins such as melamine resins, benzoguanamine resins, isocyanate compounds, blocked isocyanate compounds, cyclic carbonate compounds, and polyfunctional rings can be used Well-known and commonly used thermosetting resins such as oxygen compounds, polyfunctional oxetane compounds, episulfide resins, and melamine derivatives. In one aspect of the present invention, the molecule has at least one thermosetting property selected from the group consisting of cyclic ether groups and cyclic thioether groups (hereinafter abbreviated as cyclic (thio) ether groups) Ingredients are preferred.

Such a thermosetting component having more than two cyclic (sulfur) ether groups in the molecule includes a cyclic ether group having more than two 3, 4 or 5 member rings in the molecule, or a cyclic sulfur Compounds composed of either or two types of ether groups, for example: compounds with at least two epoxy groups in the molecule (ie, multifunctional epoxy compounds), and at least two oxygens in the molecule Compounds of cyclobutane (ie, multifunctional oxetane compounds), compounds having more than two sulfide groups in the molecule (ie, episulfide resins), etc.

Examples of the aforementioned multifunctional epoxy compounds include jER828, jER834, jER1001, jER1004 manufactured by Mitsubishi Chemical Co., Ltd., Epiclon 840, Epiclon 850 manufactured by DIC Corporation, Epiclon 1050, Epiclon 2055, and Nippon Steel & Sumitomo Chemical Co., Ltd. Epotohto YD-011, YD-013, YD-127, YD-128, DER317, DER331, DER661, DER664 made by Dow Chemical Co., Ltd., SUMI-EPOXY ESA made by Sumitomo Chemical Industry Co., Ltd. -011, ESA-014, ELA-115, ELA-128, AER330, AER331, AER661, AER664, etc. (all are trade names) manufactured by Asahi Kasei Industries Co., Ltd .; all of which are trade names; Mitsubishi JERYL903 by Chemical Co., Ltd., Epiclon 152, Epiclon 165 by DIC Co., Ltd., Epotohto YDB-400, YDB-500 by Nippon Steel & Sumitomo Chemical Co., Ltd., DER542 by Dow Chemical, Sumitomo Chemical Industries Brominated epoxy resins such as SUMI-EPOXY ESB-400, ESB-700, AER711 and AER714 (all trade names) manufactured by Asahi Kasei Industries Co., Ltd .; jER152 manufactured by Mitsubishi Chemical Co., Ltd. , JER154, DEN431, DEN438 by Dow Chemical, Epiclon N-730, Epiclon N-770, Epiclon N-865 by DIC Corporation, Epotohto YDCN-701 by Nippon Steel & Sumitomo Chemical Co., Ltd. , YDCN-704, EPPN-201, EOCN-1025, EOCN-1020, EOCN-104S, RE-306, SUMI-EPOXY ESCN-195X, ESCN- manufactured by Sumitomo Chemical Industry Co., Ltd. 220. Novolac epoxy resins such as ARECN-235 and ECN-299 (all trade names) manufactured by Asahi Kasei Industries Co., Ltd .; Epiclon 830 manufactured by DIC Corporation, jER807 manufactured by Mitsubishi Chemical Corporation, and new Epot manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. ohto YDF-170, YDF-175, YDF-2004, etc. (all are trade names) bisphenol F-type epoxy resin; Epotohto ST-2004, ST-2007, ST-3000 manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. (Brand name) hydrogenated bisphenol A type epoxy resin; jER604 manufactured by Mitsubishi Chemical Co., Ltd .; Epotohto YH-434 manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd .; SUMI-EPOXY manufactured by Sumitomo Chemical Industry Co., Ltd. Glycidylamine type epoxy resins such as ELM-120 (both trade names); hydantoin type epoxy resins; alicyclic epoxy resins such as CELLOXIDE 2021P (trade names) manufactured by Daicel Corporation; Mitsubishi YL-933 made by Chemical Co., Ltd., TEN, EPPN-501, EPPN-502 made by Dow Chemical Co., Ltd. (all are trade names), and trihydroxyphenylmethane type epoxy resin; YL made by Mitsubishi Chemical Co., Ltd. -6056, YX-4000, YL-6121 (all are trade names), etc., bixylenol type or biphenyl type epoxy resin, or a mixture of these; EBPS-200, Asahi manufactured by Nippon Kayaku Co., Ltd. Bisphenol S type epoxy resins such as EPX-30 manufactured by Denki Industry Co., Ltd. and EXA-1514 (brand name) manufactured by DIC Corporation; bisphenol A such as jER157S (brand name) manufactured by Mitsubishi Chemical Co., Ltd. Novolac epoxy resin; JERYL-931 manufactured by Mitsubishi Chemical Co., Ltd. (both trade names); tetrahydroxyphenylethane epoxy resin; TEPIC manufactured by Nissan Chemical Industry Co., Ltd. (trade name) Heterocyclic epoxy resin; diglycidyl phthalate resin such as BLEMMER DGT manufactured by Nippon Oil & Fats Co., Ltd .; tetraglycidyl xylyl ethyl such as ZX-1063 manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd. Alkane resins; naphthyl group-containing epoxy resins such as ESN-190, ESN-360, and HP-4032, EXA-4750, and EXA-4700 manufactured by New Nippon Chemical Co., Ltd .; HP- manufactured by DIC Corporation Epoxy resins with a dicyclopentadiene skeleton such as 7200 and HP-7200H; glycidyl methacrylate copolymer epoxy resins such as CP-50S and CP-50M manufactured by Nippon Oil and Fats Co., Ltd .; and then cyclohexyl Copolymerized epoxy resin of maleimide and glycidyl methacrylate; epoxy-modified polybutadiene rubber derivative (such as PB-3600 manufactured by Daicel Chemical Industry), CTBN modified epoxy resin (example Such as YR-102, YR-450, etc. manufactured by Toto Chemical Co., Ltd., etc., but not limited to this. These epoxy resins can be used alone or in combination of two or more. Among these, novolak-type epoxy resins, heterocyclic epoxy resins, bisphenol A-type epoxy resins, or mixtures of these are particularly preferred.

As the aforementioned polyfunctional oxetane compound, in addition to bis [(3-methyl-3-oxetanylmethoxy) methyl] ether, bis [(3-ethyl-3-oxetan Butylmethoxy) methyl] ether, 1,4-bis [(3-methyl-3-oxetanylmethoxy) methyl] benzene, 1,4-bis [(3- Ethyl-3-oxetanylmethoxy) methyl] benzene, (3-methyl-3-oxetanyl) methacrylate, (3-ethyl-3-oxa Cyclobutyl) methacrylate, (3-methyl-3-oxetanyl) methyl methacrylate, (3-ethyl-3-oxetanyl) methyl methyl In addition to polyfunctional oxetanes such as acryl acrylate or such oligomers or copolymers, oxetane alcohol and novolak resin, poly (p-hydroxystyrene), Cardo type Ethers of resins having hydroxyl groups such as bisphenols, calixarenes, resorcinol calixarenes, or hemisiloxanes. In addition, a copolymer of an unsaturated monomer having an oxetane ring and an alkyl (meth) acrylate and the like can also be mentioned.

Examples of the above-mentioned episulfide resin include bisphenol A-type episulfide resin YL7000 manufactured by Mitsubishi Chemical Co., Ltd. and the like. Moreover, the same synthesis method is used, and the epoxy sulfide resin which substituted the oxygen atom of the epoxy group of a novolak epoxy resin with the sulfur atom, etc. can also be used.

When a thermosetting component having two or more cyclic (thio) ether groups in the molecule is used, it is preferable to prepare a thermosetting catalyst. Examples of such a thermosetting catalyst include imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1 -Imidazole derivatives such as cyanoethyl-2-phenylimidazole, 1- (2-cyanoethyl) -2-ethyl-4-methylimidazole; dicyandiamine, benzyldimethylamine , 4- (dimethylamino) -N, N-dimethylbenzylamine, 4-methoxy-N, N-dimethylbenzylamine, 4-methyl-N, N-dimethyl Amine compounds such as benzyl amine, hydrazine compounds such as adipic acid dihydrazide, sebacic acid dihydrazine, and phosphorus compounds such as triphenylphosphine. In addition, as a marketer, for example, 2MZ-A, 2MZ-OK, 2PHZ, 2P4BHZ, 2P4MHZ (all are trade names of imidazole compounds) manufactured by Shikoku Chemical Industry Co., Ltd., and San-apro Co., Ltd. U-CAT (registered trademark) 3503N, U-CAT3502T (all are trade names of blocked isocyanate compounds of dimethylamine), DBU, DBN, U-CATSA102, U-CAT5002 (all are bicyclic amidine compounds And its salts) etc.

In addition, in order to improve the toughness of the cured film when the warpage correction material is cured into a warpage correction layer, a compound having two or more isocyanate groups or blocked isocyanate groups in one molecule may be added in the present invention As a thermosetting component. Such a compound having two or more isocyanate groups or blocked isocyanate groups in one molecule can be exemplified by a compound having two or more isocyanate groups in one molecule (that is, a polyisocyanate compound), or in one molecule A compound having two or more blocked isocyanate groups (that is, a blocked isocyanate compound) and the like.

As the polyisocyanate compound, for example, aromatic polyisocyanate, aliphatic polyisocyanate, or alicyclic polyisocyanate can be used. As specific examples of the aromatic polyisocyanate, 4,4′-diphenylmethane diisocyanate, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, naphthalene-1,5-diisocyanate, o- Xylene diisocyanate, m-xylene diisocyanate and 2,4-toluene dimer. As specific examples of the aliphatic polyisocyanate, tetramethylene diisocyanate, hexamethylene diisocyanate, methylene diisocyanate, trimethylhexamethylene diisocyanate, 4,4-methylenebis ( Cyclohexyl isocyanate) and isophorone diisocyanate. As specific examples of the alicyclic polyisocyanate, bicycloheptane triisocyanate can be mentioned. And, the adducts of the isocyanate compounds exemplified above, biuret bodies, isocyanurate bodies and the like can be mentioned.

The blocked isocyanate group included in the blocked isocyanate compound refers to a group in which the isocyanate group is protected by the reaction with the blocking agent and temporarily passivated. When heated to the specified temperature, the blocking agent will dissociate and generate isocyanate groups.

As the blocked isocyanate compound, an addition reaction product of an isocyanate compound and an isocyanate blocking agent can be used. Examples of the isocyanate compound that can react with the blocking agent include isocyanurate type, biuret type, and addition molding. As this isocyanate compound, for example, the same aromatic polyisocyanate, aliphatic polyisocyanate, or alicyclic polyisocyanate as described above can be used.

Examples of the isocyanate blocking agent include phenol-based blocking agents such as phenol, cresol, xylenol, chlorophenol, and ethylphenol; ε-caprolactam, δ-valerolactam, and γ-butyrol Internal amide-based blocking agents such as acetamide and β-propionylamide; active methylene-based blocking agents such as ethyl acetate and acetone; methanol, ethanol, propanol, butanol, and pentane Alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, propylene glycol monomethyl ether, benzyl ether, methyl glycolate, Alcohol end-capping agents such as butyl glycolate, diacetone alcohol, methyl lactate and ethyl lactate; formaldehyde oxime, acetaldehyde oxime, acetone oxime, methyl ethyl ketoxime, diethyl amide monooxime, cyclohexane Oxime-based capping agents such as oxime; thiol-based capping agents such as butyl mercaptan, hexyl mercaptan, t-butyl mercaptan, thiophenol, methylthiophenol, ethylthiophenol, etc .; acetamide, Acetamide-based blocking agents such as benzamide; amide-based blocking agents such as succinimide and maleimide; amines such as xylidine, aniline, butylamine, and dibutylamine Blocking agents; imidazole-based blocking agents such as imidazole and 2-ethylimidazole; imine-based blocking agents such as methyleneimine and propyleneimine.

The blocked isocyanate compound may be a commercially available product, for example, 7950, 7951, 7960, 7961, 7982, 7990, 7791, 7992 (above, manufactured by Baxenden Corporation, trade name) Sumidur BL-3175, BL-4165, BL-1100 , BL-1265, Desmodur TPLS-2957, TPLS-2062, TPLS-2078, TPLS-2117, Desmotherm 2170, Desmotherm 2265 (above Sumitomo Bayer Urethane Co., Ltd., trade name), Coronate 2512, Coronate 2513, Coronate 2520 (The above is manufactured by Nippon Polyurethane Industry Co., Ltd., trade name), B-830, B-815, B-846, B-870, B-874, B-882 (Mitsui Takeda Chemicals Co., Ltd., trade name) , TPA-B80E, 17B-60PX, E402-B80T, MF-B60B, MF-K60B, SBN-70D (Asahi Kasei Chemicals Co., Ltd., trade name), etc. However, Sumidur BL-3175 and BL-4265 are obtained by using methyl ethyl oxime as a blocking agent.

Also, intramolecular molecules such as Karenz MOI-BM and Karenz MOI-BP (manufactured by Showa Denko Co., Ltd., trade name) having a radical addition polymerization reaction having an ethylenically unsaturated group by irradiation with active energy can be used. Compounds with more than 2 blocked isocyanates.

The compound having two or more isocyanate groups or blocked isocyanate groups in one molecule may be used alone or in combination of two or more.

The curable resin composition may contain a reaction catalyst that blocks isocyanate. The reaction catalyst is not particularly limited, but the reaction catalyst for blocking the isocyanate is preferably an organic ammonium salt, an organic amidine salt, or imidazole. Specifically, as the organic ammonium salt, tetraalkylammonium halide, tetraalkylammonium hydroxide, tetraalkylammonium organic acid salt, etc. can be used, and the organic amidine salt can be 1,8-diazabicyclo [5.4.0 ] Undecene-7 (hereinafter DBU), 1,5-diazabicyclo [4.3.0] nonene-5 (hereinafter DBN) phenate, octoate, oleate, p-toluenesulfonate, Formate. Among them, the use of DBU-octanoate, DBN-octanoate, etc. is preferred. As a commercially available product, organic ammonium salts can be exemplified by TOYOCAT-TR20, TOYOCAT-TRX (manufactured by Tosoh Corporation); organic amidine salts can be exemplified by U-CAT SA1, U-CAT SA102, U-CAT SA106, U-CAT SA506, U-CAT SA603, U-CAT SA1102 (made by San-apro Co., Ltd.); TOYOCAT-DMI (made by Tosoh Co., Ltd.) can be exemplified as the imidazole. These reaction catalysts can be used alone or in combination of two or more.

The curable resin composition constituting the warp correction material of the present invention may contain "a compound having two or more hydroxyl groups", and the compound having two or more hydroxyl groups may be isocyanate group-terminated or blocked The isocyanate-based compound reacts. Examples of compounds having two or more hydroxyl groups include polyol resins, polyvinyl butyral resins, polyvinyl acetal resins, polycarbonate diols, ethylene glycol, diethylene glycol, triethylene glycol, and 1, 3-propanediol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol Alcohol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, 1,2-propanediol, dipropylene glycol, tripropylene glycol, 1,3-butanediol, 1,2-butanediol, 2,3-butanediol, 1,5-hexanediol, 2,5-hexanediol, 2-methyl-1,3-propanediol, 2,2-dimethyl -1,3-propanediol, 2-butyl-2-ethyl-1,3-propanediol, 3-methyl-1,5-pentanediol, 2-ethyl-1,3-hexanediol, 2 -Aliphatic polyols such as methyl-1,8-octanediol, 1,4-cyclohexanediol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, Or bisphenol compounds such as bisphenol A or bisphenol F and these alkylene oxide adducts, G700 (trade name made by ADEKA Co., Ltd.), AM-302 (trade name made by ADEKA Co., Ltd.), THEIC, THEIC -G, THEIC-EP, THEIC-LP (product name made by Shikoku Chemical Industry Co., Ltd.), etc.

Furthermore, a compound having a hydroxy group that reacts with an isocyanate may have only two or more molecules in the molecule before the hardening reaction is performed by heat, and includes those that have more than two molecules that are changed by irradiation with active energy. For example, a compound having two or more hydroxyl groups may be an intramolecular molecule generated when the active energy ray is irradiated to the radical addition polymerization reactive component having one or more ethylenic unsaturated groups in the above molecule Compounds with more than 2 hydroxyl groups. Specific examples include pentaerythritol triacrylate, 1,4-cyclohexane dimethanol monoacrylate, 4-hydroxybutyl acrylate, and the like. By including such a compound having two or more hydroxyl groups, since the crosslinking at the time of heat curing will be sufficient, the strength of the coating film (warpage correction layer) will be improved.

In addition, for a compound having a hydroxyl group, if the hydroxyl value is 100 (mgKOH / g) or more, the crosslinking at the time of thermal curing will be sufficient, so the strength of the coating film (warpage correction layer) will be improved.

The molar ratio of the hydroxyl group in the compound having a hydroxyl group to the isocyanate group of the compound having an isocyanate group (hydroxyl group / isocyanate group) is preferably 0.1 to 0.9. If the hydroxyl group / isocyanate group is 0.1 or more, the isocyanate reaction can proceed sufficiently, and if it is 0.9 or less, the coating film will have appropriate hardness and sufficient strength can be ensured.

The curable resin composition constituting the warp correction material of the present invention may contain an inorganic filler component. The inorganic filler component is not limited and conventionally known ones can be used, and examples thereof include silica, alumina, talc, aluminum hydroxide, calcium carbonate, Neuburg diatomaceous earth, glass powder, clay, and magnesium carbonate. , Powder of natural mica, synthetic mica, barium sulfate, barium titanate, hydrotalcite, mineral wool, aluminum silicate, calcium silicate, zinc white, titanium oxide, iron oxide, silicon carbide, boron nitride, etc. Spheroidized beads, single crystal fibers, glass fibers, etc. can be used alone or in combination of two or more. Among these, silicon dioxide, aluminum oxide, and titanium oxide are preferred because the specific permittivity in the thin film can be controlled.

For the inorganic filler component, the average particle size is preferably 0.01 to 15 μm, more preferably 0.02 to 12 μm, and particularly preferably 0.03 to 10 μm. In addition, in this specification, the average particle diameter is the long-axis diameter of 20 randomly selected inorganic fillers measured with an electron microscope, and the number average particle diameter calculated as the arithmetic average is used.

The curable resin composition constituting the warp correction material of the present invention may contain a colorant component. By incorporating a colorant component, when a semiconductor wafer provided with a curable resin composition is assembled into a device, it is possible to prevent erroneous operation of the semiconductor device due to infrared rays generated from surrounding devices. In addition, when the hardener composition is printed by means such as laser marking, it is possible to easily recognize signs of characters, symbols, and the like. That is, in the semiconductor wafer on which the curable resin composition is formed, the surface of the protective film is usually printed with a model number by laser marking method (a method of cutting the surface of the protective film by laser light and printing), by By making the curable resin composition contain a colorant, the portion of the protective film that has been removed by laser light can be sufficiently contrasted with the portion that has not been removed, thereby improving visibility.

As the colorant component, one kind of organic or inorganic pigments and dyes may be used alone, or two or more kinds may be used in combination. Among these, in terms of electromagnetic wave or infrared shielding properties, black pigments are preferred. As the black pigment, carbon black, perylene black, iron oxide, manganese dioxide, aniline black, activated carbon, etc. can be used, but it is not limited thereto. From the viewpoint of preventing erroneous operation of semiconductor devices, carbon black is particularly preferred. In addition, in order to replace carbon black, pigments or dyes such as red, blue, green, and yellow may be mixed to make black or a black-based color close to black.

As the red colorant, there are monoazo system, disazo system, azo lake system, benzimidazolone system, perylene system, diketopyrrolopyrrole system, condensed azo system, anthraquinone system, quinacridine Specific examples of ketones include the following. Examples include Pigment Red 1, 2, 3, 4, 5, 6, 8, 9, 12, 14, 15, 16, 17, 21, 22, 23, 31, 32, 112, 114, 146, 147, 151, 170, 184, 187, 188, 193, 210, 245, 253, 258, 266, 267, 268, 269 etc. monoazo red colorants; Pigment Red 37, 38, 41 etc. disazo red colorants Red colorant; Pigment Red 48: 1, 48: 2, 48: 3, 48: 4, 49: 1, 49: 2, 50: 1, 52: 1, 52: 2, 53: 1, 53: 2, 57: 1, 58: 4, 63: 1, 63: 2, 64: 1, 68, etc. monoazo lake red colorants; Pigment Red 171, Pigment Red 175, Pigment Red 176, Pigment Red 185, Pigment Red 208 and other benzimidazolone-based red colorants; Solvent Red 135, Solvent Red 179, Pigment Red 123, Pigment Red 149, Pigment Red 166, Pigment Red 178, Pigment Red 179, Pigment Red 190, Pigment Red 194, Pigment Perylene series red colorants such as Red 224; Pigment Red 254, Pigment Red 255, Pigment Red 264, Pigment Red 270, Pigment Red 272 and other diketopyrrolopyrrole red colorants; Pigment Red 220, Pigment Red 144, Pigment Red 166, Pigment Red 214, Pigment Red 220, Pigment Red 221, Pigment Red 242 and other condensed azo red colorants; Pigment Red 168, Pigment Red 177, Pigment Red 216, Solvent Red 149, Solvent Red 150, Solvent Red 52, Solvent Red 207 and other anthraquinone-based red colorants; Pigment Red 122, Pigment Red 202, Pigment Red 206, Pigment Red 207, Pigment Red 209 and other quinacridone-based red colorants.

Examples of blue colorants include phthalocyanine-based and anthraquinone-based pigments. Pigment-based compounds are classified as pigments. Specific examples include Pigment Blue 15, Pigment Blue 15: 1, and Pigment Blue 15: 2. Pigment Blue 15: 3, Pigment Blue 15: 4, Pigment Blue 15: 6, Pigment Blue 16, Pigment Blue 60, etc. As the dye system, Solvent Blue 35, Solvent Blue 63, Solvent Blue 68, Solvent Blue 70, Solvent Blue 83, Solvent Blue 87, Solvent Blue 94, Solvent Blue 97, Solvent Blue 122, Solvent Blue 136, Solvent Blue 67, Solvent Blue 70 etc. In addition to these, metal-substituted or unsubstituted phthalocyanine compounds can also be used.

Examples of green colorants include phthalocyanine-based, anthraquinone-based, and perylene-based pigments. Specifically, Pigment Green 7, Pigment Green 36, Solvent Green 3, Solvent Green 5, Solvent Green 20, Solvent Green 28, and the like can be used. In addition to the above, metal-substituted or unsubstituted phthalocyanine compounds can also be used.

Examples of green colorants include phthalocyanine-based, anthraquinone-based, and perylene-based pigments. Specifically, Pigment Green 7, Pigment Green 36, Solvent Green 3, Solvent Green 5, Solvent Green 20, Solvent Green 28, and the like can be used. In addition to the above, metal-substituted or unsubstituted phthalocyanine compounds can also be used.

Examples of the yellow colorant include monoazo-based, disazo-based, condensed azo-based, benzimidazolone-based, isoindolinone-based, and anthraquinone-based. Specific examples include the following. Available: Solvent Yellow 163, Pigment Yellow 24, Pigment Yellow 108, Pigment Yellow 193, Pigment Yellow 147, Pigment Yellow 199, Pigment Yellow 202 and other anthraquinone-based yellow colorants; Pigment Yellow 110, Pigment Yellow 109, Pigment Yellow 139 , Pigment Yellow 179, Pigment Yellow 185 and other isoindolinone yellow colorants; Pigment Yellow 93, Pigment Yellow 94, Pigment Yellow 95, Pigment Yellow 128, Pigment Yellow 155, Pigment Yellow 166, Pigment Yellow 180 and other condensation Azo-based yellow colorants; Pigment Yellow 120, Pigment Yellow 151, Pigment Yellow 154, Pigment Yellow 156, Pigment Yellow 175, Pigment Yellow 181 and other benzimidazolone-based yellow colorants; Pigment Yellow 1, 2, 3, 4 , 5, 6, 9, 10, 12, 61, 62, 62: 1, 65, 73, 74, 75, 97, 100, 104, 105, 111, 116, 167, 168, 169, 182, 183, etc. Monoazo yellow colorant; Pigment Yellow 12, 13, 14, 16, 17, 55, 63, 81, 83, 87, 126, 127, 152, 170, 172, 174, 176, 188, 198, etc. Azo-based yellow colorants, etc.

In addition, for the purpose of adjusting the color tone, coloring agents such as purple, orange, brown, and black can be added. Specific examples include: Pigment Violet 19, 23, 29, 32, 36, 38, 42; Solvent Violet 13, 36; CIPigment Orange 1, CIPigment Orange 5, CIPigment Orange 13, CIPigment Orange 14 , CIPigment Orange 16, CIPigment Orange 17, CIPigment Orange 24, CIPigment Orange 34, CIPigment Orange 36, CIPigment Orange 38, CIPigment Orange 40, CIPigment Orange 43, CIPigment Orange 46, CIPigment Orange 49 , CIPigment Orange 51, CIPigment Orange 61, CIPigment Orange 63, CIPigment Orange 64, CIPigment Orange 71, CIPigment Orange 73, CIPigment Brown 23, CIPigment Brown 25, CIPigment Black 1, CIPigment Black 7 Wait.

Still, if the through electrode is formed in the fan-out area of FO-WLP, since the fan-out area and the warpage correction layer for FO-WLP must be laser processed simultaneously, the warpage correction layer is also used for alignment Light penetration is preferred. The colorant component can also be selected appropriately considering such situations.

In the curable resin composition constituting the warpage correction material of the present invention, in order to improve the adhesion and adhesion of the warpage correction layer to the object (pseudo-wafer) when the warpage correction layer is provided in the FO-WLP At least one of the characteristics of the cohesiveness of the warpage correction layer may include a coupling agent component having a functional group that reacts with an inorganic substance and a functional group that reacts with an organic functional group. In addition, when the coating film of the curable resin composition is formed to FO-WLP by including the coupling agent component, and the warp correction layer is formed by curing the curable resin composition, the warp correction layer may not be damaged Heat resistance to improve the water resistance. Examples of such coupling agents include titanate-based coupling agents, aluminate-based coupling agents, and silane coupling agents. Among these, a silane coupling agent is preferred.

Examples of the organic group contained in the silane coupling agent include vinyl, epoxy, styryl, methacryloyloxy, acryloyloxy, amine, ureido, chloropropyl, mercapto, poly Thioether group, isocyanate group, etc. As the silane coupling agent, commercially available ones can be used, and examples include KA-1003, KBM-1003, KBE-1003, KBM-303, KBM-403, KBE-402, KBE-403, KBM-1403, KBM-502, KBM -503, KBE-502, KBE-503, KBM-5103, KBM-602, KBM-603, KBE-603, KBM-903, KBE-903, KBE-9103, KBM-9103, KBM-573, KBM-575 , KBM-6123, KBE-585, KBM-703, KBM-802, KBM-803, KBE-846, KBE-9007 (all are trade names; manufactured by Shin-Etsu Chemical Industry Co., Ltd.), etc. These can be used alone or in combination of two or more.

In the curable resin composition constituting the warp correction material of the present invention, in addition to the above-mentioned components, various additives can be blended as needed. As various additives, it can contain leveling agents, plasticizers, antioxidants, ion trapping agents, gettering agents, chain transfer agents, stripping agents, rust inhibitors, adhesion promoters, ultraviolet absorbers, thermal polymerization inhibitors, Additives such as tackifiers and defoamers are well known and commonly used in the field of electronic materials.

The curable resin composition constituting the warp correction material of the present invention may contain an organic solvent. The organic solvent can be used to adjust the viscosity when synthesizing a polyether compound containing an ethylenic unsaturated group in the molecule, mixing the components, and applying the obtained curable resin composition to a substrate or a support film.

Examples of the organic solvent include ketones, aromatic hydrocarbons, glycol ethers, glycol ether acetates, esters, alcohols, aliphatic hydrocarbons, and petroleum-based solvents. More specific examples include ketones such as methyl ethyl ketone and cyclohexanone, aromatic hydrocarbons such as toluene, xylene, and tetramethyl benzene, thiophene, methylcellulose, and butylcellulose Luosu, carbitol, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, triethylene glycol monoethyl ether, etc. Glycol ethers, ethyl acetate, butyl acetate, dipropylene glycol methyl ether acetate, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol butyl ether acetate, etc., Alcohols such as ethanol, propanol, ethylene glycol, propylene glycol, etc., aliphatic hydrocarbons such as octane, decane, petroleum ether, naphtha, hydrogenated naphtha, solvent naphtha, etc. petroleum-based solvents. Organic solvents can be used alone or in combination of two or more.

<Manufacturing method of fan-out wafer-level package> The correction material of the present invention is used as a warpage correction layer of FO-WLP. The following is a description of the FO-WLP virtual wafer provided with the warpage correction layer.

First, prepare a semiconductor wafer and form a circuit on one side. The semiconductor wafer may be a silicon wafer or a compound semiconductor wafer such as gallium arsenide (GaAs). For forming circuits on the surface of the wafer, various methods including etching methods, lift-off methods, etc. can be used to form the circuit. The semiconductor wafer can also be diced into its own semiconductor wafers after the dicing step.

The semiconductor wafer obtained as described above is placed on a plate-shaped carrier with a smooth surface through an adhesive layer. The carrier is not particularly limited, and a round or square silicon wafer or metal plate can be used. In addition, as the adhesive layer, a semiconductor wafer that can temporarily fix the semiconductor wafer and can be peeled off after the fabrication of the pseudo wafer can be used. As such an adhesive layer material, acrylic adhesives, rubber adhesives, styrene / conjugated diene block copolymers, etc. can be used. Also, as an adhesive layer material, a carboxyl group-containing resin having an ethylenic unsaturated group, and the above-mentioned free radical polymerization initiator, by containing such a resin, by heating or active energy rays The irradiation can also change the adhesion of the adhesive layer.

When the semiconductor wafer is placed on the adhesive layer, a plurality of semiconductor crystals can be placed in a spaced manner. The mounted semiconductor wafers can have the same or different arrangement numbers in the horizontal and vertical directions in plan view, and can be arranged from various viewpoints such as density improvement or securing the terminal area per unit semiconductor wafer It becomes point-symmetrical or lattice-shaped. The distance between the adjacent semiconductor wafers is not particularly limited, but it is desirable to configure the fan-out (FO) area required to form the connection terminal for the resulting FO-WLP.

Next, the semiconductor wafer placed on the plate-shaped carrier through the adhesive layer is sealed with a sealing material. The side wall surface and top surface of the semiconductor wafer are sealed by the sealing material, and the sealing material is coated or even attached to the carrier on which the semiconductor wafer is placed. At this time, the sealing material is formed by inserting the space between the semiconductor wafers. The sealing step using such a sealing material can be formed by performing compression molding using a well-known resin composition for semiconductor sealing in the form of liquid, granules, or flakes. Known resin compositions for semiconductor sealing mainly use epoxy resins, epoxy resin hardeners, hardening accelerators, spherical fillers, and the like.

After the sealing material is hardened, the plate-shaped carrier is peeled off. The peeling is performed between the sealing material and the semiconductor wafer and the adhesive layer. Examples of the peeling method include: a method of performing heat treatment to change (decrease) the adhesive force of the adhesive layer and peeling; peeling between the plate-shaped carrier and the adhesive layer in advance, and then applying heat treatment or electrons to the adhesive layer The method of peeling off after irradiation treatment of line, ultraviolet rays, etc.

The pseudo-wafer obtained in this way can be post-baked. As the post-baking, for example, it is performed in a temperature range of 150 to 200 ° C. for 10 minutes to 8 hours. Next, the surface of the obtained pseudo-wafer on the opposite side to the surface where the semiconductor is embedded may be polished to thin the pseudo-wafer. The method of grinding is not particularly limited, and grinding can be performed by a well-known method using a grinder or the like. The thickness of the simulated wafer after grinding is not particularly limited, but it is usually about 50 to 500 μm.

Next, a redistribution layer or lead frame is formed on the exposed side of the semiconductor wafer-like semiconductor wafer. In the formation of the redistribution layer, firstly, an insulating resin for redistribution is applied to the entire surface of the exposed surface of the semiconductor wafer-like semiconductor wafer using a spin coating method, etc., and pre-baked at about 100 ° C to form Insulation resin layer for rewiring. Next, in order to open the connection pads of the semiconductor wafer, the insulating resin layer for rewiring is patterned and heat-treated (hardened) using photolithography or the like. The conditions for the heat treatment are, for example, within a temperature range of 150 to 250 ° C. for 10 minutes to 5 hours. The insulating resin for redistribution is not particularly limited, and in view of heat resistance and reliability, polyimide resin, polybenzo-oxide resin, benzocyclobutene resin, or the like can be used. As described above, when the insulating resin for rewiring is subjected to heat treatment, the wafer may warp due to heat shrinkage of the insulating resin. On the other hand, in the formation of lead frames, thin metal plates are formed in batches by die-cutting, bending and pressing by etching techniques or stamping processes.

The power supply layer is formed on the entire surface of the rewiring layer and the like of the wafer by sputtering or the like. Secondly, a resist layer is formed on the power supply layer, and after exposure and development to a specified pattern, electrolytic copper plating To form vias and redistribution circuits. After the redistribution circuit is formed, the resist layer is peeled off and the power supply layer is etched.

Next, flux is applied to the land provided on the redistribution circuit, and after the solder ball is mounted, the solder ball is fixed to the land by heating and melting. Furthermore, a solder resist layer can be formed so as to cover a part of the redistribution circuit and the solder balls. For the applied flux, resin-based or water-soluble ones can be used. As a heating and melting method, reflow, a hot plate, etc. can be used. In this way, the pseudo wafer of FO-WLP can be obtained.

After that, the FO-WLP pseudo wafer is divided into pieces by methods such as dicing, thereby obtaining FO-WLP.

A warp correction material is applied to the surface of the pseudo wafer obtained by such operations on the same side as the surface on which the redistribution layer is formed or on the opposite side to form a coating film. The warpage correction material can be applied by printing methods such as screen printing, inkjet, dip coating, flow coating, roll coating, bar coating, and curtain coating. The viscosity of the warpage correction material may be adjusted as long as it corresponds to the viscosity of each printing method. In particular, the inkjet method is preferable because it is a fine and partial printing, and can flexibly correspond to the warped part or size of the package. In the case of inkjet, the viscosity of the warpage correcting material at 50 ° C is preferably 5-50 mPa ･ s, and preferably 5-20 mPa ･ s. Thereby, unnecessary load is not imposed on the inkjet printer, and printing can be performed smoothly.

The coating amount of the warpage correction material is preferably adjusted so that the thickness of the warpage correction layer when hardened to form the warpage correction layer is in the range of 15 to 50 μm. If the thickness of the warpage correction layer is 15 μm or more, the warpage can be easily smoothed. Moreover, when it exceeds 50 micrometers, the thinness which is one of the advantages of FOWLP may be impaired.

The irradiation of the active energy ray may also be carried out after the pattern drawing by the inkjet printer, but it is preferably performed simultaneously with the pattern drawing by the inkjet printer, for example, from the side or bottom, etc. Irradiation of active energy rays, etc. As the light source for the irradiation of active energy rays, LEDs, low-pressure mercury lamps, medium-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon lamps, metal halogen lamps, etc. are suitable. In addition, electron rays, α rays, β rays, γ rays, X rays, neutral strands, etc. may also be used.

The amount of active energy ray irradiation varies depending on the film thickness of the warpage correction layer, generally 10 to 10000 mJ / cm ² , preferably 20 to 2000 mJ / cm ² .

In the present invention, by adjusting the coating amount of the warpage correction material (that is, the film thickness of the warpage correction layer after the warpage correction material is hardened), the irradiation amount of the active energy ray (further is full irradiation and partial irradiation ), The degree of hardening of the warpage correction layer of the pseudo-wafer can be adjusted appropriately, whereby the correction amount corresponding to the warpage state of the FO-WLP can be easily adjusted.

In the present invention, the pseudo-wafer is appropriately adjusted by adjusting the temperature or time when it is hardened by heat, or by the method of raising the temperature to the target temperature in one step, or the stepwise heating to the final temperature through the intermediate temperature The degree of hardening of the warpage correction layer can be easily adjusted in accordance with the warpage of the FO-WLP. The time for hardening by heating is from 30 seconds to 3 hours. It is preferably 30 minutes to 2 hours.

The above hardening by active energy rays and heat is preferably performed in the following manner: applying the warpage correction material to a silicon wafer of JEITA specifications and hardening by active energy rays and heat When it becomes a flat film-shaped hardened object, the absolute value of the difference between the 60 ° specular reflectance on the surface of the hardened object and the 60 ° specular reflectance at the interface between the hardened object and the silicon wafer becomes 10% or less. The present inventors found that when the warpage correcting material is hardened to form the warpage correcting layer, the warpage correcting material is hardened in a manner satisfying the above-mentioned relationship, and the warpage correcting material can be moderately warped stress. This reason is not definite, and it may be because the deep curability involved in curing with active energy rays participates in curing shrinkage. This is the speculation of the inventor after all, and the invention is not limited to this theory. [Example]

Next, the present invention will be described in more detail by giving examples, but the present invention is not limited to these examples.

<Preparation of pseudo-wafers> Using a dicing device, a P-type silicon wafer (4 inch, thickness 150 μm) with a SiO ₂ film (100 nm) formed on one side made by Canosis Co., Ltd. was cut to obtain a 10 mm × 10 mm square semiconductor Wafer. The temporary fixing thin film was arranged on a SUS flat substrate, and the semiconductor wafers were arranged so that the SiO ₂ surface was in contact with the temporary fixing thin film, and the semiconductor wafers were arranged 5 × 5 vertically and horizontally at intervals of 10 mm. A 100 mm × 100 mm square sheet-like sealing material for semiconductors was laminated on top of it so that the center position was substantially uniform, and compression molding was performed at 150 ° C. for 1 hour using a heated press. As a sealing material for semiconductors, the compound having the following composition is arranged by sandwiching two 50 μm cover films (Teijin Purex film), and the compound is formed into a sheet shape by a plate pressing method. A thin sheet with a thickness of 200 μm.

<Preparation of the sealing material composition for semiconductors> The following components were blended and heated at 70 ° C for 4 minutes with a roller kneader, followed by heating at 120 ° C for 6 minutes for a total of 10 minutes while depressurizing (0.01 kg / cm ² ) At the same time, melt-kneading is carried out to produce a kneaded material.・ Naphthalene type epoxy resin (NC-7000 manufactured by Nippon Kayaku Co., Ltd.) 30 parts ・ Bisphenol type epoxy resin (YX-4000 manufactured by Mitsubishi Chemical Co., Ltd.) 10 parts ・ Phenol novolac type epoxy resin (The ･ Dow Chemical ･ Company made DEN431) 10 parts ・ Anthraquinone 2 parts ・ Carbon black (Carbon MA-100 made by Mitsubishi Chemical Co., Ltd.) 10 parts ・ Spherical silica (Admafine SO-E2 made by Admatechs Co., Ltd.) 500 1 part silane coupling agent (KBM-403 manufactured by Shin-Etsu Chemical Co., Ltd.) 2 parts 2-phenylimidazole (2PZ manufactured by Shikoku Chemical Industry Co., Ltd.) 2 parts

Next, the temporary fixing film was peeled off from the obtained laminate and the back side was polished to obtain a pseudo-wafer of 100 mm × 100 mm square shape and 200 μm thickness.

On the semiconductor circuit surface side of the obtained pseudo wafer, a positive-type rewiring forming resin composition having the following composition was applied by spin coating, and prebaked by heating at 100 ° C. for 20 minutes. The thickness of the photosensitive rewiring forming resin layer formed on the pseudo wafer after prebaking is 10 μm.

<Preparation of resin composition for rewiring formation> First, 2,4-bis (3-amino-4-hydroxyphenyl) -propane was dissolved in N-methylpyrrolidone, and 4,4 'was dropped -N-methylpyrrolidone of diphenyl ether dicarboxylic acid chloride, while reacting at 0-5 ° C to synthesize polyhydroxyamide (polybenzoxazole precursor) with a weight average molecular weight of 1.3 × 10 ⁴ Thing) resin. Next, the following components containing polyhydroxyamide resin were prepared, and the mixed solution was subjected to pressure filtration using a 3 μm pore Teflon (registered trademark) filter to prepare a resin composition for rewiring.・ 100 parts of polyhydroxy amide resin (Z2) ・ 10 parts of phenol novolac epoxy resin (DEN431 manufactured by The ･ Dow Chemical ･ Company) ・ 1-naphthoquinone-2-diazide-5-sulfonate (AZ Electronic Materials Co., Ltd. trade name TPPA528) 10 parts ・ YXY block copolymer (Nanostrength M52N made by Arkema) 5 parts ・ Silane coupling agent (KBM-403 made by Shin-Etsu Chemical Industry Co., Ltd.) 2 parts ・ γ-butyrolactone 30 parts ・ 120 parts of propylene glycol monomethyl ether acetate

Next, through a photomask (which is a circular opening pattern of 100 μm formed continuously at a pitch of 400 μm), using HMW680GW (metal halogen lamp) manufactured by ORC Corporation, a positive type is formed with an exposure amount of 500 mJ / cm ² The patterned light was irradiated using TMAH 2.38 wt% aqueous solution and developed at 25 ° C for 2 minutes. The formed rewiring resin layer was formed with a circular opening pattern. After that, after baking at 200 ° C for 1 hour, it was cooled to room temperature. The pseudo-wafer obtained in this way causes warpage that makes the redistribution resin layer side concave. The amount of warpage is based on the peripheral portion of a square of 100 mm × 100 mm, and the central portion is recessed by 6 mm.

＜ Preparation of warpage correction materials ＞ Cresol novolac epoxy resin (EOCN-104S manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 220g / eq) 220 parts (1 equivalent), carbitol acetate 140.1 Parts and 60.3 parts of solvent naphtha were placed in a flask and heated and stirred at 90 ° C to dissolve them. The resulting solution was temporarily cooled to 60 ° C, 72 parts of acrylic acid (1 mole), 0.5 parts of methylhydroquinone, and 2 parts of triphenylphosphine were added, and the mixture was heated at 100 ° C to react for about 12 hours to obtain Reactant with acid value 0.2 mgKOH / g. 80.6 parts (0.53 mol) of tetrahydrophthalic anhydride was added to the reactant, and the reaction was heated at 90 ° C for about 6 hours to obtain a polyether compound solution containing an acryloyl group, the solid content of which was 64.9% The hardenable component, and the acid value of solid content is 85mgKOH / g. Let this be the hardening component 1.

Using the hardened component 1 obtained as described above, the warpage correction materials 1 to 5 were prepared according to the composition shown in Table 1 below.

The details of each component in Table 1 are as follows.・ 7982: Blocked isocyanate (manufactured by Baxenden) ・ 4HBA: 4-hydroxybutyl acrylate (manufactured by Nippon Kasei Co., Ltd.) ・ THEIC-G: Ginseng (2-hydroxyethyl) isocyanurate (Shikoku Chemical Industry Co., Ltd.) Compounds containing trifunctional hydroxyl groups (hydroxyl value 644 mgKOH / g) • HDDA: 1,6-hexanediol diacrylate (Daicel ･ Allnex Co., Ltd.) • DPGDA: dipropylene glycol diacrylate (Made by BASF Japan Co., Ltd.) ・ PE-3A: pentaerythritol triacrylate (made by Kyoeisha Chemical Co., Ltd.) ・ TMPTA: trimethylolpropane triacrylate (made by Daicel ･ Allnex Co., Ltd.) ・ Omnirad 369 : 2-benzyl-2-dimethylamino-1- (4-morpholinylphenyl) -butanone (manufactured by IGM Resins) ・ MA-100: carbon black (manufactured by Mitsubishi Chemical Co., Ltd.) ・BYK-307: Silicon-based additive (manufactured by BYK ･ Japan Co., Ltd.) ・ BYK-350: Acrylic-based additive (manufactured by BYK ･ Japan Co., Ltd.) ・ N-770: Phenolic novolac epoxy resin Epiclon N-770 (Manufactured by DIC Corporation) ・ DICY7: dicyandiamide (manufactured by Mitsubishi Chemical Co., Ltd.) ・ B-30: barium sulfate (manufactured by Sakai Chemical Industry Co., Ltd.) ・ SO-E2: spherical silica (shares) (Made by Admatechs Co., Ltd.)

<Measurement of physical properties of warpage correction material> Each warpage correction material obtained above is coated on a mirror surface of a silicon wafer of JEITA standard to form a coating film, and a high-pressure mercury lamp is used to irradiate ultraviolet rays with an irradiation amount of 600 mJ / cm ² . Perform temporary hardening. Next, the temporary cured film was peeled off, fixed on the Teflon sheet with the irradiation surface facing upward, and heated in a BOX-type drying furnace at 150 ° C for 60 minutes, thereby obtaining a flat film-shaped cured product. The linear expansion coefficient of the obtained hardened product at 50 ° C. was measured by thermomechanical analysis (TMA / SS6000, manufactured by Seiko Instruments Co., Ltd.). In addition, the elastic modulus at 50 ° C. of the obtained hardened product was measured by a dynamic viscoelasticity measuring device (DMS6100, manufactured by Seiko Instruments Co., Ltd.). Furthermore, the thickness of the flat film-shaped hardened material is measured by a micrometer caliper. The measurement results are shown in Table 2 and Table 3 below. In addition, for each flat film-shaped hardened product, the glossiness of the surface side (ultraviolet irradiation side) of the flat film-shaped cured product and the surface side (interface side) in contact with the mirror surface of the silicon wafer was measured using a gloss meter (Micro-tri-gross, manufactured by BYK Gardener) to measure the 60 ° specular reflectance. The absolute value of the difference between the two is determined from the measurement results of the specular reflectance on the surface side and the interface side. The results are shown in Table 4 below.

<Measurement of warpage of pseudo-wafer> Warp correction materials 1, 2, 3, and 5 were applied to the convex side surface of the prepared pseudo-wafer by inkjet printing using piezoelectric inkjet printers, respectively To form a coating film. In this case, the high-pressure mercury lamp attached to the inkjet head was used immediately after printing, and ultraviolet light was irradiated at an irradiation amount of 600 mJ / cm ² to temporarily cure the coating film. Moreover, the warpage correction material 4 was used, and the coating film was formed on the convex side surface of the prepared pseudo wafer by screen printing, and the coating film was dried at 80 ° C. for 30 minutes using a BOX drying oven. A high-pressure mercury lamp was used and ultraviolet light was irradiated at an irradiation amount of 600 mJ / cm ² . The five types of coating films cured as described above were heated at 150 ° C. for 60 minutes using a BOX-type drying furnace (hardening method A).

In addition, the warpage correction material 2 was applied to the convex side surface of the prepared pseudo wafer by inkjet printing using a piezoelectric inkjet printer to form a coating film. At this time, ultraviolet irradiation was not performed. Thereafter, a BOX-type drying furnace was used and heated at 150 ° C. for 60 minutes (hardening method B).

The warpage amount of the pseudo-wafer on which the warpage correction material was cured by the hardening method as described above to form the warpage correction layer was measured. The amount of warpage was measured at 25 ° C using a long vernier scale. Taking 2 points on the peripheral part of the pseudo wafer as a reference, when the warpage of the central part is ± 2 mm or less, it is judged as good (〇). If it is ± 2 ~ 3mm, it is judged as △, and if it exceeds ± 3mm, it is judged as bad (×). The evaluation results are shown in Table 2 and Table 3.

It is clear from Tables 2 and 3 that the linear expansion coefficient (α) × elastic modulus (β) × film thickness (γ) of Examples 1 and 2 whose warpage is 2000 or more is good, compared with Therefore, the linear expansion coefficient (α) × elastic modulus (β) × film thickness (γ) of Comparative Example 1 and Comparative Example 2 is less than 2000, so warpage correction is not good. In addition, Examples 6 and 7 in which the coefficient of linear expansion (α) × elasticity (β) × film thickness (γ) is 10,000 or less are good in warpage, compared to this, Comparative Examples 3, 4 and Comparative Examples The coefficient of linear expansion (α) × elastic modulus (β) × film thickness (γ) of 6 is more than 10,000, so the warpage of the warpage correction material is not good.

Moreover, when comparing Example 1 and Comparative Example 1, although the linear expansion coefficient (α) and the elastic modulus (β) are constant, the film thickness (γ) is different. In this case, if the coefficient of linear expansion (α) × modulus of elasticity (β) × film thickness (γ) is 2000 or more, the warpage correction material will have good warpage, and if it is less than 2000, the warpage correction material The warpage will be bad. On the other hand, when comparing Example 2 and Comparative Example 1, although the linear expansion coefficient (α) and the film thickness (γ) are constant, the elastic modulus (β) is different. In this case as well, if the coefficient of linear expansion (α) × modulus of elasticity (β) × film thickness (γ) is 10,000 or less, the warpage of the warpage correction material will be good, and if it exceeds 10,000, the warpage correction The warpage of the wood will be bad.

In addition, as shown in Table 4, using the cured products of warpage correction materials 1 to 4, the absolute value of the reflectance difference is 10% or less, and it is estimated that the hardening on the surface and the interface is performed satisfactorily. On the other hand, although the absolute value of the reflectance difference of the cured product using the warpage correcting material 5 exceeds 10%, the compound containing a hydroxyl group contained in the warpage correcting material 5 has two or more hydroxyl groups, And the hydroxyl value of the compound is more than 100 (mgKOH / g), so it is presumed that the warpage measurement and evaluation of the pseudo wafer using the warpage correction material 5 (Example 7) can achieve the situation with the warpage correction material 1 to 4 (Examples 1 to 6) The same effect.

Claims (9)

A warpage correction material, which is a warpage correction material for fan-out wafer-level packaging, characterized in that is composed of a hardening resin composition containing components that can be hardened by active energy rays and heat, and When the aforementioned warpage correction material is cured into a flat film-like hardened material by active energy rays and heat, the linear expansion coefficient α (ppm / ° C) at 25 ° C and the elastic modulus β at 25 ° C of the hardened material (GPa), and the thickness γ (μm) satisfy the following relational expression, 2000 ≦ α × β × γ ≦ 10000. The warp correction material described in claim 1, wherein the aforementioned γ (μm) is in the range of 15-50. The warp correction material according to claim 1 or 2, wherein the curable resin composition contains at least a compound having a hydroxyl group and a compound having an isocyanate group, and the hydroxyl group in the compound having a hydroxyl group is opposite to the compound having an isocyanate group The molar ratio of the isocyanate group (hydroxyl group / isocyanate group) is 0.1 to 0.9. The warp correction material described in claim 3, wherein the compound having a hydroxyl group has two or more hydroxyl groups in one molecule, and the hydroxyl value is 100 (mgKOH / g) or more. The warp correction material according to claim 3 or 4, wherein the compound having a hydroxyl group or the compound having an isocyanate group has at least one isocyanurate group or a benzene ring. A method for manufacturing a fan-out wafer-level package, which is a method for manufacturing a fan-out wafer-level package using the warpage correction material described in any one of claims 1 to 5, which includes: correcting the aforementioned warpage The material is applied to the surface on the same side or the opposite side as the surface on which the rewiring layer is formed of the pseudo-wafer to form a coating film, and the aforementioned coating film is hardened by active energy rays and heat to form a warpage correction layer. The method according to claim 6, wherein the application is performed by an inkjet method. The method described in claim 6 or 7, wherein the thickness of the warpage correction layer is in the range of 15 to 50 μm. The method according to any one of claims 6 to 8, wherein the hardening by active energy rays and heat is performed in the following manner: applying the warpage correction material to a silicon wafer of JEITA specifications When the hardened product is cured into a flat film by active energy rays and heat, the difference between the 60 ° specular reflectance at the surface of the hardened product and the 60 ° specular reflectance at the interface between the hardened product and the silicon wafer The absolute value of the value becomes 10% or less.