TW201901807A - Vertical heat treatment device - Google Patents

Abstract

An object of the invention is to suppress particles from adhering to substrates when a substrate holder in which wafers are held in a shelflike manner is transported into a reaction vessel and the substrates are subjected to a heat treatment in a vacuum. When a plurality of wafers held in a shelflike manner by a wafer boat serving as a substrate holder are transported into a reaction tube (reaction vessel) and subjected to heat treatment in a vacuum, a gas is discharged from a gas nozzle which is formed inside the reaction vessel so as to extend along the height direction of the wafer boat and in which a plurality of gas discharge ports are formed aligned with the wafer boat. Although particles are discharged from the gas discharge ports together with the gas, protrusions which extend in a band shape are formed in regions on the inside wall of the reaction vessel that face the gas discharge ports via the gas nozzle and the wafer boat, and the particles strike the protrusions and bounce back vertically or horizontally. As a result, instances of the particles bouncing back to the wafer side are suppressed, meaning adhesion of particles to the wafers can be suppressed.

Description

Vertical heat treatment device

The present invention relates to a vertical heat treatment device that carries a substrate holder holding a plurality of substrates in a rack shape into a vertical reaction container and performs heat treatment on the substrate in a vacuum gas environment.

As an example of a semiconductor manufacturing apparatus, there is a vertical heat treatment apparatus that performs heat treatment on a plurality of semiconductor wafers (hereinafter referred to as "wafers"). This heat treatment device supplies gas to a plurality of wafers, for example, in a reaction vessel in a vacuum gas environment, by a gas nozzle extending along the height of the wafer boat and having a plurality of gas ejection holes along its length. The wafer boat is held in a shape and subjected to a predetermined heat treatment. In this heat treatment, particles may suddenly adhere to the wafer. I suspect that the reason is that the particles generated in the gas nozzle are ejected into the reaction container together with the gas, and the particles move in the reaction container and fall on the wafer.

Patent Document 1 proposes a technique in which a plurality of ejection openings formed by a gas introduction nozzle are formed with R chamfered portions or approximately curved surfaces that gradually narrow or widen toward the opening edge of the ejection opening. This method suppresses the generation of particles by suppressing the disturbance of the gas, and suppresses the generation of particles caused by excessive decomposition reaction in the gas phase, and also suppresses the peeling of the particles attached to the gas introduction nozzle. However, the particles ejected from the gas nozzle in the non-suppressing reaction container are attached to the wafer, so the problem to be solved by the present invention cannot be solved. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4861391

[Problems to be solved by the invention]

The present invention has been made in view of such circumstances, and an object thereof is to provide a technique for moving a substrate holder holding a plurality of substrates in a rack shape into a vertical reaction container, and heat-treating the substrates in a vacuum gas environment. In the vertical heat treatment apparatus, particles are prevented from adhering to the substrate. [Solution to the problem]

Therefore, in the vertical heat treatment apparatus of the present invention, a substrate holder holding a plurality of substrates in a rack shape is moved into a vertical reaction container, and the substrate is heat-treated in a vacuum gas environment, and is characterized by: The nozzle is arranged to extend in the height direction of the substrate holder in the reaction container, and a plurality of gas ejection holes are formed along the substrate holder; a protrusion is formed on the inner wall of the reaction container, and A region facing the gas nozzle through the substrate holder; and a vacuum exhaust portion for evacuating the inside of the reaction container; and the protruding portion is formed so that particles ejected from the gas ejection hole are ejected. Bounce up or down or sideways. [Effect of the invention]

According to the present invention, a protrusion is formed in an area of the inner wall of the vertical reaction container facing the gas nozzle via the substrate holder, and the protrusion ejects the fine particles ejected from the gas ejection hole upward and downward. Or rebound horizontally. Therefore, the particles on the inner wall of the collision reaction container are suppressed from rebounding to the substrate side, and the particles are prevented from adhering to the substrate.

[The best form of implementing the invention]

An embodiment of a vertical heat treatment apparatus according to the present invention will be described with reference to FIGS. 1 to 3. In FIG. 1, the element 11 is a heat treatment furnace, and includes a reaction tube 2 made of, for example, a double-tube structure made of transparent quartz, which is composed of an inner tube 21 that is open at both ends and an outer tube 22 that is closed at the upper end. The tube 2 is surrounded by a heating mechanism 12 made of, for example, a heater. The lower sides of the inner tube 21 and the outer tube 22 are supported by a cylindrical manifold 23.

The element 3 in FIG. 1 is a wafer boat which is a substrate holder in which a plurality of wafers W are arranged in a rack shape along the length direction of the reaction tube 2. This wafer boat 3 is set to be raised by the boat lifting device 31 and carried into the heat treatment furnace 11. The opening at the lower end of the manifold 23 is defined as being closed by a cover 32, and a cylindrical body 33 including a rotation shaft (not shown) is provided between the cover 32 and the wafer boat 3.

The manifold 23 is connected to a vacuum pump 25 that is a vacuum exhaust unit via an exhaust passage 24 including an exhaust valve V, and the inside of the reaction tube 2 is configured to perform vacuum exhaust from between the inner tube 21 and the outer tube 22. In this example, the reaction container is constituted by the reaction tube 2 and the manifold 23, and the inner wall of the inner tube 21 corresponds to the inner wall of the reaction container.

The manifold 23 is inserted with, for example, an elongated tubular quartz gas nozzle 4 with a closed end. The gas nozzle 4 is provided in the reaction tube 2 so as to extend vertically along the height direction of the wafer boat 3, and a plurality of gas ejection holes 41 are formed along the wafer boat 3. The gas ejection holes 41 are formed at positions corresponding to the wafers W mounted on the wafer boat 3. As shown in FIG. 2, for example, the gas ejection holes 41 are formed at positions where the wafers W adjacent to each other in the vertical direction are ejected.

FIG. 2 shows the wafer W1 on the uppermost layer of the wafer boat 3 and a plurality of wafers W on the lower side thereof. The base end side of the gas nozzle 4 is connected to a gas supply path 42 having a flow adjustment section 43 through a port (not shown) of the manifold 23, and the other end side of the gas supply path 42 is connected to a processing gas such as silane (SiH ₄ ) A gas supply source 44 of gas, and the gas supply path 42 includes a valve, a mass flow controller, or the like.

The inner tube 21 of the reaction tube 2 is provided with a protrusion 5 in a region facing the gas nozzle 4 through the wafer boat 3. Inside the gas nozzle 4, there may be cases where the reaction product formed inside the nozzle is a film release, or the cracks of the quartz constituting the gas nozzle 4, the quartz powder at the time of installation are present as particles, and these particles may be caused by The gas ejection hole 41 suddenly ejects with the gas. The protruding portion 5 is used to rebound the particles ejected from the gas ejection hole 41 upward.

The fine particles ejected from the gas ejection hole 41 linearly move toward a portion facing the gas ejection hole 41 as described later, and collide with the area. Therefore, the protruding portion 5 is provided in a region of the inner tube 21 facing the gas nozzle 4 with the wafer boat 3 interposed therebetween. The "opposing region" in this example refers to a region in which particles ejected from the gas ejection hole 41 are likely to collide with each other, and is determined by grasping the generation state of the particles. Specifically, for example, the "opposing region" in FIG. 3 means that when viewed from the center O of the wafer W, it is separated from the straight line L in the circumferential direction by + θ (θ = 45) degrees, and -θ (θ = 45 degrees) The area S between the straight line L22 and the straight line L32.

The protruding portion 5 is provided on the inner wall of the inner tube 21 in the region S facing each other, and may be provided in the entire region S, or may be provided in a part of the region S, that is, a portion (opposing portion) facing the gas ejection port 41. This facing portion refers to an area where a large amount of particles ejected from the gas ejection hole 41 collide, and in this example, the protruding portion 5 is provided at the facing portion. For example, as shown in FIG. 3, the inner tube 21 is displayed in a plane. For example, when the straight line passing through the center of the gas ejection hole 41 in the circumferential direction and the center O of the wafer W loaded on the wafer boat 3 is set as the straight line L1, From the perspective of the center O of the circle W, the opposing portion is a portion between the straight lines L21 and L31 separated from + θ (θ = 10 degrees) and −θ (θ = 10 degrees) in the circumferential direction from the line L1.

This example is provided with a strip-shaped protrusion (projection portion) 5, and the protrusion is continuously formed in the vertical direction. For example, as shown in FIG. 1 and FIG. 3, the protruding portion 5 is provided in a region from a height position corresponding to the uppermost wafer W of the wafer boat 3 to a height position corresponding to the lowermost wafer W. When the plurality of protrusions 5 are viewed from a cross section along the longitudinal direction, the protrusions 5 are formed in a triangular wave shape having a top on the wafer boat 3 side. Among the protrusions 5 in this example, a triangular wave-shaped upper surface is an inclined surface 51, and a lower surface is formed as a horizontal surface 52. For example, as shown in FIG. 50-degree range tilt. The horizontal plane 51 refers to a state where the oblique inclination with respect to the horizontal plane is within 10 degrees.

The protrusions 5 are formed so that the particles ejected from the gas ejection holes 41 rebound upward. Therefore, for example, as shown in FIG. 2, when viewed from the side of the wafer W, an inclined surface 51 is provided for each gas ejection hole 41, and the gas ejection holes 41 and the inclined surface 51 are arranged to face each other. In this example, for example, the height positions of the central portion in the height direction of the gas injection hole 41 and the central portion in the height direction of the inclined surface 51 are formed to be aligned with each other.

In the inner tube 21, the area where the particles collide differs depending on the type or flow rate of the gas and the pressure in the reaction vessel. Therefore, for example, the behavior of the particles in the reaction vessel is observed in advance as described later to grasp the area where the particles collide, and The shape or mounting area of the protruding portion 5 is set to encompass this area.

Next, the function of the vertical heat treatment apparatus will be described using an example in which a Si film is formed using SiH ₄ gas as a processing gas. First, a predetermined number of wafers W are held to the wafer boat 3, and the boat lifting device 31 is raised to load the wafer W into a reaction container composed of the reaction tube 2 and the manifold 23. After the wafer boat 3 is carried in and the lower opening of the manifold 23 is blocked by the lid body 32, the temperature in the reaction container is raised to, for example, 500 ° C, and the exhaust valve V is opened together, and the inside of the reaction container is evacuated by the vacuum pump 25. Exhaust to a predetermined vacuum degree, for example, 133Pa.

While the wafer boat 3 is rotated around the vertical axis, the SiH ₄ gas is supplied from the gas supply source 44 through the gas nozzle 4 into the reaction container at a flow rate of, for example, 1000 sccm. The gas is ejected from the gas ejection holes 41 of the gas nozzle 4 toward the wafers W mounted on the wafer boat 3, and the wafers W adjacent to each other in the height direction are ejected, and a Si film is formed on the surface of the wafer W. A plurality of gas ejection holes 41 formed along the wafer boat 3 supply the gas to the corresponding wafer W. Therefore, the gas is also sufficiently distributed to the center portion of the wafer W, and is uniformly formed throughout the wafer surface. deal with.

Here, the film formation gas is ejected from the gas nozzle 4 and the particles are ejected. As described above, the inside of the gas nozzle 4 may have particles, and these particles may be suddenly ejected into the reaction container from the gas ejection hole 41 together with the film-forming gas. The inventor of the present case used a high-speed camera to photograph the condition of the particles ejected from the gas ejection hole 41 into the reaction container, and confirmed the behavior of the particles.

After using the gas nozzle 4 with the same diameter of the gas ejection hole 41 and supplying a gas filled in a 1 liter tank into the reaction container, for example, the pressure in the reaction container is about 66660 Pa. The particles tend to be easily removed from the gas nozzle 4 The gas ejection holes 41 on the lower side of the reactor are discharged, and the number of particles on the lower side of the reaction container increases. On the other hand, when the pressure in the reaction vessel was reduced to about 133 Pa, it was confirmed that the number of particles on the upper side of the reaction vessel tended to increase. I speculate that this is because the amount of gas molecules is reduced under reduced pressure, the particles are carried to the upper side in the gas nozzle 4, and collision occurs at the front end of the gas nozzle 4 to lose kinetic energy, and the gas on the upper side of the gas nozzle 4 is lost. The ejection holes 41 are discharged.

When the inside of the reaction container is a vacuum gas environment, the fine particles discharged from the gas ejection holes 41 move linearly with a difference from the flow of the gas. It has been confirmed through the film: for example, FIG. 2 shows the path of the particles by dotted lines, while repeatedly colliding with the wafer W, and toward the inner wall of the inner tube 21 (the inner wall of the reaction container) facing the gas ejection hole 41. go ahead. Then, the direction of the inclined surface 51 of the protrusion 5 is changed to upward and rebound upward, and, for example, the horizontal surface 52 of the protrusion 5 on the upper side is collided and rebounded downward. I have confirmed that the particles lose energy and lose potential in each collision, and as a result, they have fallen in the vicinity of the protrusions 5 on the outer side of the wafer W. Therefore, even if particles are ejected from the gas ejection hole 41, the particles are suppressed from adhering to the wafer W.

On the other hand, as shown in FIG. 4, a conventional structure having no protruding portion is provided. As the particles repeatedly collide with the wafer W, they face the inner wall of the inner tube 21 (the inside of the reaction container) facing the gas ejection hole 41. Wall) advances, hits the inner wall of the inner tube 21, and bounces back to the wafer W side. As described above, the particles collide with the inner wall 21 to rebound and fall onto the wafer W, so the particles will adhere to the wafer W.

The present invention is made of the following: in a reaction vessel in a vacuum gas environment, grasp the behavior of particles ejected from the gas ejection holes 41 of the gas nozzle 4; and according to the above embodiment, as already described, the inner tube 21 The inner wall is provided with a protruding portion 5 in a region facing the gas nozzle 4 through the wafer boat 3. Therefore, even if particles are ejected into the reaction container from the gas ejection hole 41, the particles collide with the protrusions 5 and rebound upward. Accordingly, the particles are prevented from colliding with the inner wall of the inner tube 21 and rebounded toward the wafer W, so that the particles are prevented from adhering to the wafer W.

Further, since the protrusions 5 are provided in the up-down direction so as to extend in the circumferential direction, even if particles are ejected from the plurality of gas ejection holes 41 formed along the longitudinal direction of the gas nozzle 4, each of the particles can be directed to Bounce back from above. In addition, when the protruding portion 5 is viewed along a longitudinal cross-section, it is formed into a triangular wave shape, so that the particles easily collide with the triangular wave-shaped inclined surface, and it is easy for the particles to rebound in the vertical direction.

Furthermore, since the upper surface of the triangular wave shape constituting the protruding portion 5 is formed as an inclined surface 51 and the lower surface is formed as a horizontal surface 52, the particles rebound upward, and the rebounded particles are adjacent to the upper side as described above. The protruding portion 5 loses speed and falls outside the wafer W. In addition, since the particles rebounded from the protrusion 5 on the uppermost layer have a short distance from the protrusion 5 to the upper end of the wafer boat 3, even if the particles rebound and tilt upward, they do not collide with the wafer W, but are directed toward the wafer. Since the upper side of the boat 3 advances, the effect of preventing particulate contamination is large.

Next, another example of the protruding portion will be described. The differences between the protrusions 6 shown in FIGS. 5 and 6 and the protrusions 5 are as follows: The surface on the upper side of the triangular wave is a horizontal plane 61, and the lower surface is formed as an inclined surface 62. For example, the inclined surface 62 is formed to be inclined in a range of 40 to 50 degrees with respect to the horizontal plane, and the horizontal plane 61 includes a state within 10 degrees of the inclined system with respect to the horizontal plane.

In the reaction container provided with such a protruding portion 6, while the particles repeatedly collide with the wafer W, they advance toward the inner wall (the inner wall of the reaction container) of the inner tube 21 facing the gas ejection hole 41 and collide. The inclined surface 62 of the protrusion 6 changes its direction of movement downward and rebounds downward, and, for example, hits the horizontal surface 61 of the protrusion 6 on the lower side. The particles lose energy and strength with each collision, and as a result, they fall in a region near the protrusion 5 on the outer side of the wafer W. Thereby, even in the configuration using this protruding portion 6, the adhesion of particles to the wafer W is also suppressed. In addition, since the surface constituting the lower side of the triangular wave is an inclined surface 62, the gas ejected from the gas ejection port 41 abuts the inclined surface 62 and changes its direction, and is supplied to the wafer W toward the diagonally lower side. This can increase the amount of gas supplied into the wafer surface.

An additional example of the protrusion will be described. The protruding portion 7 shown in FIGS. 7 and 8 is provided along the vertical direction, and is formed so that the particles ejected from the gas ejection hole 41 rebound laterally from the top 71 toward the inner wall of the inner tube 21. The lateral width increases. For example, the protruding portion 7 is formed into a triangle in a plan view, and the top portion 71 is provided on the straight line L1. The triangle is formed in a shape in which the particles collide with the inclined portions 72 and 73 and rebound in the lateral direction.

In a reaction container provided with such a protrusion 7, while colliding with the wafer W, the particles advance toward the inner wall (inner wall of the reaction container) of the inner tube 21 facing the gas ejection hole 41, for example, and collide with the protrusion 7. The inclined portions 72 and 73 change the direction to the horizontal direction and rebound in the horizontal direction (see FIG. 8). As described above, particles collide with the protrusions 7 and the like, lose energy and have no potential, and fall on the outer side of the wafer W. Therefore, also in the configuration using this protruding portion 7, the adhesion of particles to the wafer W is suppressed.

Next, another example of the reaction container will be described. The reaction tube 2 of the vertical heat treatment apparatus shown in FIG. 9 has a double-tube structure of an inner tube 21 and an outer tube 22, and a gas nozzle 4 formed in the inner tube 21 so as to extend along its length direction is housed. A plurality of slit-shaped openings 26 extending in the longitudinal direction of the side surface of the inner tube 21 are formed in the vertical direction so as to face the gas nozzle 4. The other components are the same as those of the vertical heat treatment apparatus described above, and the same components are denoted by the same reference numerals, and descriptions thereof are omitted. In this example, the reaction container is also composed of the reaction tube 2 and the manifold 23, and the inner wall of the inner tube 21 corresponds to the inner wall of the reaction container.

A projection portion is formed in a region of the inner tube 21 facing the gas nozzle 4. The structure of the protrusion is the same as that of the above embodiment. FIG. 9 shows that a protrusion 5 having a structure in which particles are rebounded upward is formed, and the protrusion 5 is provided in a region other than the opening 26 to face the gas ejection hole 41. In the reaction tube 2 of this example, an opening portion 26 is formed at a portion facing the gas nozzle 4. Therefore, the particles ejected from the gas ejection hole 41 flow laterally toward the opening portion 26 and pass between the inner tube 21 and the outer tube 22. Drained out of the reaction tube 2. Further, in a region where the opening portion 26 is not provided, the particles rebound upward due to collision with the protrusions 5, energy is lost due to repeated collisions, and the particles fall outside the wafer W. As described above, the particles are prevented from adhering to Wafer W. The protruding portion provided in the inner tube 21 may be a protruding portion 6 configured to rebound downward, or a protruding portion 7 configured to rebound laterally, and is selected in accordance with the state of generation of particles.

The reaction tube 8 of the vertical heat treatment apparatus shown in FIG. 10 has a single tube structure, and the upper side of the reaction tube 8 is connected to a vacuum pump 82 which is a vacuum exhaust unit via an exhaust passage 81 including an exhaust valve V. The lower side of the reaction tube 8 is connected to the manifold 83, and the inside of the reaction tube 8 houses a gas nozzle 4 formed so as to extend along the length direction thereof. The other components are the same as those of the vertical heat treatment apparatus described above, and the same components are denoted by the same reference numerals, and descriptions thereof are omitted. In this example, the reaction container is also constituted by the reaction tube 8 and the manifold 83, and the inner wall of the reaction tube 8 corresponds to the inner wall of the reaction container.

As shown in FIG. 10, a region facing the gas nozzle 4 in the reaction tube 8 has a protruding portion. The structure of the protrusion is the same as that of the above embodiment. FIG. 10 shows an example in which the protrusions 5 are formed so that the fine particles rebound upward. The reaction tube 8 in this example is exhausted from the upper side, so the gas discharged from the gas ejection hole 41 flows laterally while contacting the surface of the wafer W, and further toward the upper side of the reaction tube 8 through the exhaust passage 81 And exhaust. In addition, the particles ejected from the gas ejection hole 41 repeatedly collide with the wafer W and advance toward the portion facing the gas nozzle 4, and collide with the protrusion 5 to lose speed. Further, the wafer W is exhausted toward the upper side of the reaction tube 8 together with the flow of the gas, and is exhausted through the exhaust passage 81. Thereby, adhesion of particles to the wafer W is suppressed. The protruding portion provided in the reaction tube 8 may be a protruding portion 6 configured to rebound downward, or a protruding portion 7 configured to rebound laterally, and is selected according to the state of generation of particles.

As described above, the protruding portion may be provided in a part of a region from a height position corresponding to the wafer W of the uppermost layer of the wafer boat 3 to a height position corresponding to the wafer W of the lowermost layer. For example, in a case where the generation of particles is grasped and the number of particles on the upper side of the crystal boat 3 is large as described above, a protrusion may be formed on the inner wall of the reaction vessel at least from the uppermost layer of the crystal boat 3. The area from the height position corresponding to the wafer W to the height position corresponding to the wafer W of the tenth layer from the top.

Furthermore, the protrusions need not be provided continuously in the vertical direction, but may be provided at intervals in the vertical direction. For example, in a region facing the gas ejection port 41 across the wafer boat 3, the wafers W mounted in the wafer boat 3 adjacent to each other in the vertical direction may correspond to the gas ejection port 41, The protrusions are provided at intervals from each other in the vertical direction. In addition, in the case where the triangular-shaped concave portion is continuously formed or formed with a gap, the portion other than the concave portion is equivalent to the protruding portion, and this case is also included in the scope of patent application for this case.

In addition, in the case where a plurality of gas nozzles 4 which are liable to eject particles are provided, the generation status of the particles can be grasped. A plurality of protrusions are provided corresponding to the plurality of gas nozzles 4, and the gas nozzles 4 Protrusions are provided in all the areas included in the facing portions. In addition, the processing performed with respect to the vertical heat treatment apparatus is not only the above-mentioned film forming treatment, but also a heat treatment such as an annealing treatment.

S‧‧‧ area

V‧‧‧ exhaust valve

W, W1‧‧‧ wafer

11‧‧‧Heat treatment furnace

12‧‧‧Heating mechanism

2‧‧‧ reaction tube

21‧‧‧Inner tube

22‧‧‧ Outer tube

23‧‧‧ Manifold

24‧‧‧ Exhaust duct

25‧‧‧Vacuum pump

26‧‧‧ opening

3‧‧‧ Crystal Boat

31‧‧‧Boat lifting device

32‧‧‧ cover

33‧‧‧ Tubular body

4‧‧‧gas nozzle

41‧‧‧gas ejection hole

42‧‧‧Gas Supply Road

43‧‧‧Flow Adjustment Department

44‧‧‧Gas supply source

5‧‧‧ protrusion

51‧‧‧inclined surface

52‧‧‧ Horizontal

6‧‧‧ protrusion

61‧‧‧horizontal

62‧‧‧inclined surface

7‧‧‧ protrusion

71‧‧‧Top

72, 73‧‧‧ Inclined

8‧‧‧ reaction tube

81‧‧‧Exhaust duct

82‧‧‧Vacuum pump

83‧‧‧ Manifold

FIG. 1 is a longitudinal sectional side view showing an embodiment of a vertical heat treatment apparatus of the present invention. FIG. 2 is a side view showing a protruding portion, a gas nozzle, and a wafer provided in a vertical heat treatment apparatus. 3 is a plan view showing a reaction tube, a gas nozzle, and a wafer provided in a vertical heat treatment apparatus. FIG. 4 is a side view showing a reaction tube, a gas nozzle, and a wafer. Fig. 5 is a longitudinal sectional side view showing another example of the vertical heat treatment apparatus. FIG. 6 is a side view showing a protrusion, a gas nozzle, and a wafer. Fig. 7 is a longitudinal sectional side view showing still another example of the vertical heat treatment apparatus. FIG. 8 is a plan view showing a reaction tube, a gas nozzle, and a wafer. Fig. 9 is a longitudinal sectional side view showing still another example of the vertical heat treatment apparatus. Fig. 10 is a longitudinal sectional side view showing still another example of the vertical heat treatment apparatus.

Claims (6)

A vertical heat treatment device for carrying a substrate holder holding a plurality of substrates in a rack shape into a vertical reaction container and heat-treating the substrate in a vacuum gas environment. The vertical heat treatment device includes: a gas nozzle, It is arranged in the reaction container to extend along the height direction of the substrate holder, and a plurality of gas ejection holes are formed along the substrate holder; a protrusion is formed on the inner wall of the reaction container and is separated by A region where the substrate holder faces the gas nozzle; and a vacuum exhaust portion for vacuum exhausting the inside of the reaction container; and the protruding portion is formed so that the particles ejected from the gas ejection hole go up and down Bounce back or forth. For example, the vertical heat treatment device of the scope of application for a patent, wherein the plurality of protrusions are provided along the vertical direction, and the plurality of protrusions are formed into a triangular wave shape when viewed in a longitudinal section. For example, the vertical heat treatment device of the second scope of the patent application, wherein the plurality of protrusions constitute a triangular wave-shaped upper surface and a lower surface, one of which is a horizontal plane, and the other of which is an inclined surface. For example, the vertical heat treatment device according to the third aspect of the patent application, wherein the inclined surface is inclined in a range of 40 to 50 degrees with respect to a horizontal plane. For example, the vertical heat treatment device of the scope of application for a patent, wherein the protrusion is provided along the up-down direction, and is formed to increase in width from the top toward the inner wall side, so as to cause the particles to rebound laterally. For example, the vertical heat treatment device according to any one of claims 1 to 5, wherein the protrusion is provided at least from a position corresponding to a height of the substrate on the uppermost layer of the substrate holder to the tenth layer from the top. Area up to the height corresponding to the substrate.