TW201900305A - Back-drilling processing method for multilayer printed wiring board and substrate processing apparatus in which the processing depth of the back-drilling process can be controlled accurately and precisely - Google Patents

Back-drilling processing method for multilayer printed wiring board and substrate processing apparatus in which the processing depth of the back-drilling process can be controlled accurately and precisely Download PDF

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TW201900305A
TW201900305A TW106115261A TW106115261A TW201900305A TW 201900305 A TW201900305 A TW 201900305A TW 106115261 A TW106115261 A TW 106115261A TW 106115261 A TW106115261 A TW 106115261A TW 201900305 A TW201900305 A TW 201900305A
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substrate
processing
drilling
lower plate
rotating shaft
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TWI632007B (en
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金谷保彥
品田常夫
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達航科技股份有限公司
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Abstract

In the back-drilling processing, it is possible to prevent elongating the reserved error margin caused by errors such as inclination or deflection respectively existing in the processing table, the lower plate and the substrate, thereby providing an accurate and precise back-drilling processing, and the reserved error margin can be designed to be set shorter. The descending distance information is detected by the drill bit itself which performs the back-drilling processing, and the actual distance to the desired conductor layer is calculated via a certain calculation formula based on the acquired descending distance information. By further modifying the distance, the processing depth of the back-drilling process can be controlled accurately and precisely.

Description

多層印刷配線基板之背鑽加工方法及基板加工裝置  Back-drilling processing method of multilayer printed wiring board and substrate processing apparatus  

本發明有關於一種多層印刷配線基板之背鑽加工方法,及適合實施該加工方法的基板加工裝置。 The present invention relates to a back-drilling processing method for a multilayer printed wiring board, and a substrate processing apparatus suitable for implementing the processing method.

以往,隨著對於電子機器的超高速控制的需求,對於印刷配線基板方面追求其多層化及高密度化。在如此的多層印刷配線基板中,為了裝設在如電子零件等、或是連接多層化的印刷配線之間,會設置穿孔(貫通孔),並在該處施加預定厚度的導電用電鍍處理。例如圖2所示,在其上下設置由銅箔部所構成的表面導體層107與背面導體層108,而在最終要在其表面導體層107與背面導體層108對配線圖案施加蝕刻的基板101中,在第一絕緣層103與第二絕緣層104之間設置第一內裝導體層102,或是在第二絕緣層104與第三絕緣層105之間設置第二內裝導體層106,使第一內裝導體層102成為欲形成的導體層連接背面導體層108時,設置上下貫通基板101本身的穿孔,在該處施加電鍍,而在沿著垂直方向貫通基板101的孔部109形成預定厚度的電鍍部110。此電鍍部110連接需要連接 背面導體層108的第一內裝導體層102,但是如此狀態下會有餘長穿孔部(以下稱為「餘長部」)殘存且延伸到表面導體層107。 In the past, with the demand for ultra-high-speed control of electronic equipment, multilayer printed wiring and high density have been pursued for printed wiring boards. In such a multilayer printed wiring board, a through hole (through hole) is provided in order to be mounted between, for example, an electronic component or a multilayer printed wiring, and a conductive plating process of a predetermined thickness is applied thereto. For example, as shown in FIG. 2, the surface conductor layer 107 composed of a copper foil portion and the back surface conductor layer 108 are provided on the upper and lower sides thereof, and the substrate 101 to which the wiring pattern is finally applied to the surface conductor layer 107 and the back surface conductor layer 108 is finally provided. The first inner conductive layer 102 is disposed between the first insulating layer 103 and the second insulating layer 104, or the second inner conductive layer 106 is disposed between the second insulating layer 104 and the third insulating layer 105. When the first built-in conductor layer 102 is connected to the conductor layer to be formed to connect the back surface conductor layer 108, a through hole penetrating the substrate 101 itself is provided, and plating is applied thereto to form a hole portion 109 penetrating the substrate 101 in the vertical direction. A plating portion 110 of a predetermined thickness. The plated portion 110 is connected to the first inner conductor layer 102 to which the back conductor layer 108 is to be connected. However, in this state, the excess length perforated portion (hereinafter referred to as "excess portion") remains and extends to the surface conductor layer 107.

如果前述餘長部殘存下來,例如在高速傳送等時其控制頻率到達數GHz以上時,會在餘長部發生反射或衰減,都會成為引發使用該基板101使用的電子機器中出現雜訊等不良狀況的原因,而使該基板101本身被評為不良品。因此,在進行除去該餘長部的加工時,有必要進行背鑽加工以除去多餘的電鍍部110並盡量縮短餘長部。 When the remaining length portion remains, for example, when the control frequency reaches several GHz or more at the time of high-speed transmission or the like, reflection or attenuation occurs in the excess length portion, which may cause noise such as noise in the electronic device used for the substrate 101. The reason for the condition is that the substrate 101 itself is rated as a defective product. Therefore, when the processing for removing the excess length portion is performed, it is necessary to perform a back drilling process to remove the excess plating portion 110 and to minimize the excess length portion.

在如前述的背鑽加工中,由於殘存的餘長部會成為雜訊等不良狀況的原因,因此理想是要以最大限度將電鍍部110除去,也就是以餘長部成為零的狀況最理想,但另一方面,由於夾在絕緣層間的第一內裝導體層102的厚度為12至25μm,因此為了維持背面導體層108與第一內裝導體層102確實相連,必須在到達該第一內裝導體層102前停止背鑽加工。因此,需要正確地控制背鑽加工的深度,現實上由於加工裝置的加工台本身的傾斜或彎曲、加工時使用的下板個別的厚度的誤差、個別的基板本身、或者是切出複數基板前的基板母板的厚度的誤差、由測定裝置所造成的誤差等複數的原因,使背鑽加工的深度難以正確地控制。因此,在基板製造者雇用基板加工業者進行基板的加工時,需考量在該背鑽加工時可能會發生的誤差,刻意不將前述殘存的餘長部的長度減為零,而指定 保留若干的長度,作為設計上的殘留量。 In the back-drilling process as described above, since the remaining excess length portion causes a problem such as noise, it is desirable to remove the plating portion 110 to the maximum extent, that is, the remaining length portion is zero. On the other hand, since the thickness of the first inner conductor layer 102 sandwiched between the insulating layers is 12 to 25 μm, in order to maintain the back conductor layer 108 and the first inner conductor layer 102, it is necessary to reach the first The backdrilling process is stopped before the built-in conductor layer 102. Therefore, it is necessary to correctly control the depth of the back-drilling process, in reality, due to the inclination or bending of the processing table itself of the processing apparatus, the individual thickness of the lower plate used for processing, the individual substrate itself, or before cutting out the plurality of substrates. The depth of the substrate mother board, the error caused by the measuring device, and the like, make it difficult to accurately control the depth of the back drilling process. Therefore, when the substrate manufacturer employs the substrate processing industry to perform the processing of the substrate, it is necessary to consider the error that may occur during the back-drilling process, and deliberately does not reduce the length of the remaining excess length portion to zero, and designates to retain a certain number of Length, as a residual amount on the design.

如此,即便在基板加工時存在有若干長度的容許範圍作為餘長部的長度,仍然需要在該若干的容許範圍內盡可能正確地加工到接近該數值,因此在背鑽加工深度的正確控制中,採用使用探針的方法。也就是,以探針的尖端作為基準位置(Z軸座標位置中作為的0的點),將裝入有轉軸的基板加工裝置中,設置於該轉軸的轉子前端的鑽頭的尖端位置,設定在與探針的尖端位置同一高度的位置上,再藉由使用探針測定載置在加工台上的基板的高度位置,來計算出從探針的基準位置到達該基板為止的距離(M)。而不只基板本身的厚度,從欲形成的導體層到表面導體層107無為止的電鍍部在設計上的長度也就是基準餘長(Lnd)、及電鍍部在設計上的預留誤差範圍的長度(td),都是在事前由基板製造者決定的設計值,因此從基準餘長(Lnd)扣除預留誤差範圍的長度(td)後的數值成為基準背鑽深度(L2d),而從前述探針所測定到的探針基準位置到該基板為止的距離(M),與前述基準背鑽深度(L2d)之和,就是鑽頭的移動距離。因此,藉由令鑽頭降下到該計算出的移動距離為止,進行背鑽加工。 Thus, even if there is a certain length of the allowable range as the length of the excess length portion during the processing of the substrate, it is necessary to process as close as possible to the numerical value within the allowable range of the plurality of holes, so that in the correct control of the depth of the back drilling process , using the method of using the probe. In other words, the tip end of the probe is used as a reference position (a point of 0 in the Z-axis coordinate position), and the position of the tip end of the drill provided at the tip end of the rotor of the rotating shaft is set in the substrate processing apparatus in which the rotating shaft is mounted. At the same height as the tip end position of the probe, the distance (M) from the reference position of the probe to the substrate is calculated by measuring the height position of the substrate placed on the processing table using a probe. The length of the plating portion from the conductor layer to the surface conductor layer 107, which is not only the thickness of the substrate itself, is the reference length (Lnd), and the length of the design tolerance range of the plating portion. (td) is a design value determined by the substrate manufacturer beforehand. Therefore, the value after subtracting the length (td) of the reserved error range from the reference residual length (Lnd) becomes the reference backdrill depth (L2d), and from the foregoing The distance (M) between the probe reference position measured by the probe to the substrate and the reference backdrill depth (L2d) is the moving distance of the drill. Therefore, the back drilling process is performed by lowering the drill bit to the calculated moving distance.

然而,當藉由此方法來控制背鑽加工的深度時,會因以下的理由而難以正確地控制。也就是,第一,探針的尖端位置與設置在轉軸上的鑽頭尖端位置會發生位置偏離。探針再怎麼說也是與 鑽頭不同的個體,因此非常難以使其尖端的位置完全地一致,一般來說難免有±20μm程度的誤差。第二,在背鑽加工時使用的基板加工裝置的加工台中,隨著各加工位置加工台的高度本身會有差異。對於多數的基板加工裝置測定各加工台在複數的位置時加工台的高度,已判明多數的加工台本身隨著各加工位置會有約±50μm的高度差異存在。第三,關於在加工時使用的下板的厚度,也相對於其預設的厚度會有差異。對於多數的下板測定其厚度,已判明大概會有約±20μm的差異存在。第四,關於多層印刷配線基板本身,相對於其預設的厚度,會有差異存在。一般來說多層印刷配線基板是對樹脂層與導體配線層交互地加熱壓縮來形成,因此即使基板在設計時有針度各層的厚度或全體的板厚本身有設計尺寸存在,但實際上作為製品的基板,當然除了各層的厚度以外,該基板本身的板厚也會發生差異。實際上對多數的基板測定其與設計值之誤差,已判明基板的厚度大概會有約±30μm的差異存在。特別是關於多層印刷配線基板,作為配線的導體層並非均等地分配在全部的樹脂層間,例如某一片基板的某部分設有二十層的導體層,但在其他部分確可能只配設八層導體層,如此,即使在單一片的基板中也會有導體層的配置不均一的狀況,在同一片基板中,設有二十層導體層的部分與只設有八層導體層的部分相比,自有板厚較厚的傾向。 However, when the depth of the back-drilling process is controlled by this method, it is difficult to control correctly for the following reasons. That is, first, the tip end position of the probe is displaced from the position of the drill tip position provided on the rotating shaft. The probe is also an individual different from the drill bit, so it is very difficult to completely match the position of the tip. Generally, it is inevitable that there is an error of about ±20 μm. Second, in the processing table of the substrate processing apparatus used in the back-drilling process, the height of the processing table varies with each machining position. In the case of a plurality of substrate processing apparatuses, the height of the processing table at each of the processing stages is measured. It has been found that a large number of processing stages themselves have a height difference of about ±50 μm with each processing position. Third, there is a difference in the thickness of the lower plate used in processing relative to its preset thickness. For the measurement of the thickness of most of the lower plates, it has been found that there is probably a difference of about ± 20 μm. Fourth, regarding the multilayer printed wiring board itself, there is a difference with respect to its preset thickness. In general, a multilayer printed wiring board is formed by alternately heating and compressing a resin layer and a conductor wiring layer. Therefore, even if the thickness of each layer of the substrate or the entire thickness of the substrate is designed to have a design size, it is actually used as a product. Of course, in addition to the thickness of each layer, the thickness of the substrate itself may vary. Actually, the error of the substrate and the design value was measured for many substrates, and it was found that the thickness of the substrate was approximately different by about ± 30 μm. In particular, in the multilayer printed wiring board, the conductor layer as the wiring is not uniformly distributed among all the resin layers, and for example, a conductor layer of twenty layers is provided in a certain portion of a certain substrate, but it is possible to provide only eight layers in other portions. The conductor layer is such that even in a single-piece substrate, the arrangement of the conductor layers is not uniform, and in the same substrate, a portion in which twenty conductor layers are provided and a portion in which only eight conductor layers are provided are provided. Than, the tendency of own thicker plate thickness.

如以上所述,在背鑽加工時,會因為這些偏差產生最大±120μm 的誤差。因此,為減少此偏差,即使想消除前述各偏差中占大比例的加工台高度的偏差,其所需的維護及用修復必需要高度且精密的技術,不只需要過度的時間及成本,也頂多只能縮小±20μm左右的。結果,即便花了這樣多的時間及成本、仍然有±90μm左右的誤差存在,相對於設計值之基準預留誤差範圍,難以滿足顧客所要求的在±50μm左右的誤差下正確地進行背鑽加工的深度控制之標準。 As described above, during back-drilling, errors of up to ±120 μm are caused by these deviations. Therefore, in order to reduce this deviation, even if it is desired to eliminate the deviation of the processing table height which accounts for a large proportion of the above-mentioned deviations, the maintenance and repair required for it requires a highly sophisticated technique, which requires not only excessive time and cost but also topping. It can only be reduced by about ±20μm. As a result, even if such a large amount of time and cost is spent, there is still an error of about ±90 μm, and it is difficult to satisfy the customer's required back drilling with an error of about ±50 μm with respect to the reference error range of the design value. The standard for depth control of machining.

因此,為更正確地控制背鑽加工深度,如專利案JP 2014-33006號所示,提供了在基板的配線區域外設置應說是測試用的試樣(coupon),根據在該處進行背鑽加工取得的深度資訊,以在適當的位置控制背鑽加工的加工深度之方法。 Therefore, in order to more accurately control the depth of the back-drilling process, as shown in the patent JP-A-2014-33006, it is provided that a coupon to be tested is provided outside the wiring area of the substrate, according to the back there. The depth information obtained by the drilling process to control the machining depth of the back drilling process at an appropriate position.

但是,由於需在實際上進行背鑽加工之穿孔外,另外設置其他試樣,因此仍然難以正確且精密地控制背鑽加工的加工深度,且有增加製品之基板的製造成本的缺點。 However, since other samples are additionally provided in addition to the perforation of the back-drilling process, it is still difficult to accurately and precisely control the processing depth of the back-drilling process, and there is a disadvantage that the manufacturing cost of the substrate of the product is increased.

另一方面,如前述,如果除了鑽頭本身外另設探針以進行基板的高度等之測定,則探針的前端位置與設於轉軸上的鑽頭的前端位置會發生位置偏離,因此若以轉軸實際上對基板進行背鑽加工,則光是位置偏離就會產生±20μm左右的誤差。因此,為消除此誤差,如專利案JP 2014-187153號所示,已有提供直接以鑽頭探知基板內的深度位置,以該位置為基準控制背鑽加工的加工深度 的方法。 On the other hand, as described above, if a probe is provided in addition to the drill itself to measure the height of the substrate or the like, the position of the tip end of the probe and the position of the tip end of the drill provided on the rotating shaft may be displaced, so that the shaft is rotated. In fact, the back-drilling process of the substrate causes an error of about ±20 μm when the light is displaced. Therefore, in order to eliminate this error, as shown in the patent JP-A-2014-187153, there has been provided a method of directly detecting the depth position in the substrate by the drill bit and controlling the machining depth of the back-drilling processing based on the position.

但是,在此方法中仍然需要在適當的內部配線層以外另設電壓檢測層,因此仍然不能正確且精密地控制背鑽加工的加工深度,且有增大基板製造成本的缺點。 However, in this method, it is still necessary to provide a voltage detecting layer in addition to an appropriate internal wiring layer, so that the processing depth of the back-drilling processing cannot be accurately and precisely controlled, and there is a disadvantage that the manufacturing cost of the substrate is increased.

專利文獻1:JP 2014-33006號公報 Patent Document 1: JP 2014-33006

專利文獻2:JP 2014-187153號公報 Patent Document 2: JP 2014-187153

本發明欲解決的問題,是在多層印刷配線基板的背鑽加工中,必須要正確且精密地控制其加工深度,然而若以基板加工裝置中與轉軸的鑽頭不同個體的探針,來測定加工位置中該基板的高度位置,且根據決定為設計值的基板本身的厚度、基準餘長(Lnd)及基準預留誤差範圍(td)進行背鑽加工的深度控制時,會因進行加工的鑽頭本身的位置與探針位置的位置偏離,以及基板的設計值與實際厚度的差異,造成難以正確且精密地控制加工深度,且此方法以外的方法,也有難以正確並精密地控制加工深度、且增加作為製品的基板的製造成本的問題點。 The problem to be solved by the present invention is that in the back-drilling processing of the multilayer printed wiring board, the processing depth must be accurately and precisely controlled. However, if the individual probes are different from the drill shaft in the substrate processing apparatus, the processing is performed. The position of the height of the substrate in the position, and the depth of the back drilling process is determined according to the thickness of the substrate itself, the reference residual length (Lnd), and the reference remaining error range (td) determined as the design value, The position of the position itself is deviated from the position of the probe position, and the difference between the design value of the substrate and the actual thickness makes it difficult to accurately and precisely control the machining depth, and methods other than this method are difficult to accurately and precisely control the machining depth, and The problem of the manufacturing cost of the substrate as a product is increased.

本申請案的發明,第一,是將基板加工裝置的加工台本身所具有的傾斜或撓曲等、以及加工時使用的下板本身所具有的傾斜或撓曲的所造成的測定誤差抑制在最低限度,同時,以多層印刷 配線基板中個別基板,及在單一片基板中也會有各部分之間,都會有微小的厚度差異,以及導體層的高度位置間有差異等為前提,發現在背鑽加工時作為加工深度控制對象之內裝導體層中,相對於設計值之基準餘長之實際上高度位置之偏離,與包含該導體層之基板本身的厚度中,相對於設計值之實際上的厚度之偏離,此2種偏離之間有相關關係,並利用此相關關係,與鑽頭本身之下降距離資訊檢測機構共同地累積並計算其所檢測的下降距離資訊,來達成背鑽加工中正確且精密的加工深度控制。第二,是提供具有可達成背鑽加工中正確且精密的加工深度控制之控制機構的加工裝置,進而提供使用該加工裝置的背鑽加工的控制方法。 In the invention of the present application, first, the measurement error caused by the inclination or deflection of the processing table itself of the substrate processing apparatus and the inclination or deflection of the lower plate itself used in the processing is suppressed. At the same time, at the same time, in the case of individual substrates in a multilayer printed wiring board, and in a single substrate, there are also slight differences in thickness between the respective portions, and differences in the height positions of the conductor layers are found. In the inner conductor layer to be processed by the machining depth during back drilling, the actual height position deviation from the reference length of the design value, and the thickness of the substrate itself including the conductor layer, relative to the actual value of the design value The deviation of the thickness is related to the two kinds of deviations, and the correlation information is used to accumulate and calculate the detected falling distance information together with the falling distance information detecting mechanism of the drill bit to achieve the back drilling process. Correct and precise machining depth control. Secondly, it is a processing apparatus that provides a control mechanism that achieves accurate and precise machining depth control in back-drilling processing, and further provides a control method of back-drilling processing using the processing apparatus.

本申請案的發明是一種加工深度控制機構,是使用電腦而可對多層印刷配線基板進行背鑽加工的基板加工裝置中,在進行背鑽加工時控制轉軸的鑽頭的下降距離。 The invention of the present application is a processing depth control mechanism which is a substrate processing apparatus capable of back-drilling a multilayer printed wiring board using a computer, and controls a falling distance of a drill of a rotating shaft during back drilling.

該加工深度控制機構具有下降距離資訊檢測機構,藉由轉軸的鑽頭接觸檢測對象物以檢測出下降距離資訊,且具有記錄媒體、提取機構、及算出機構。 The machining depth control means includes a falling distance information detecting means for detecting a falling distance information by contacting a detecting object with a rotating shaft, and having a recording medium, an extracting means, and a calculating means.

前述記錄媒體,記錄有以下1至5所分別記載的位置資訊等:1.關於設計上的基板厚度、基準餘長及設計上的預留誤差範圍(殘留量)的長度,以及設於穿孔之孔部的電鍍層之層的預定厚度及鑽頭之尖端角之角度的數值資訊; 2.載置於基板加工裝置的加工台上,且至少上表面構成為導體層的下板中,依下述設定所決定的測定點及各區域在平面上的座標位置資訊,而該測定點是:格子狀地區分出複數的區域,以其各區域為單位,並以同一的基準決定的一個測定點,或是在其各區域中,對其各區域以同一的基準更進一步區分成格子狀的子區域,而以各子區域為單位,並以同一的基準決定的一個測定點;3.對於前述各測定點,藉由令進行背鑽加工的鑽頭所設置的轉軸下降,以前述下降距離資訊檢測機構所測定到的各測定點個別的高度位置資訊;4.存在於載置於基板加工裝置的加工台上的前述下板上的多層印刷配線基板上,或者是存在於切出複數的多層印刷配線基板前的母板(以下單稱為「母板」)上的各背鑽加工位置在平面上的座標位置資訊;5.藉由令前述轉軸下降至前述基板或是母板的各背鑽加工位置,以前述下降距離資訊檢測機構測定到的各個各背鑽加工位置個別的高度位置資訊。 In the recording medium, position information and the like described in the following 1 to 5 are recorded: 1. The length of the substrate thickness, the reference residual length, and the design reserved error range (residual amount), and the perforation. Numerical information of the predetermined thickness of the layer of the plating layer of the hole portion and the angle of the tip angle of the drill bit; 2. placed on the processing table of the substrate processing apparatus, and at least the upper surface is formed as a lower layer of the conductor layer, as follows Setting the determined measurement point and the coordinate position information of each area on the plane, and the measurement point is: a measurement point in which a plurality of areas are separated by a grid-like area, and each area is determined by the same reference. Or, in each of the regions, a sub-region that is further divided into a lattice shape on the same basis for each region, and a measurement point determined by the same reference unit in each sub-region; The measurement point is obtained by lowering the rotation axis provided by the drill bit for back-drilling, and the height position information of each measurement point measured by the falling distance information detecting means; 4. being present on the loading base The back-drilled layer on the multilayer printed wiring board on the lower plate on the processing table of the plate processing apparatus or the mother board (hereinafter simply referred to as "mother board") present in front of the plurality of multilayer printed wiring boards Coordinate position information of the processing position on the plane; 5. By lowering the rotation axis to the back drilling processing position of the substrate or the mother board, each of the respective back drilling processing positions measured by the falling distance information detecting mechanism is individual Height location information.

前述提取機構從前述各區域個別的座標位置資訊、及存在於多層印刷配線基板或其母板上的背鑽加工位置個別的座標位置資訊,提取背鑽加工時下板上載置有多層印刷配線基板或其母板的狀態下,存在於前述下板的各區域各別的座標值域內的背鑽加工位 置。 The extraction mechanism extracts the multilayer printed wiring substrate on the lower plate during back-drilling processing from the individual coordinate position information of each of the regions and the coordinate position information of the back-drilling processing position existing on the multilayer printed wiring board or the mother board thereof. In the state of its mother board or the mother board, there is a back-drilling processing position in each coordinate range of each region of the lower plate.

前述算出機構根據下述算式算出個別背鑽加工深度L2c,自動控制基板加工裝置中背鑽加工的加工深度。 The calculation means calculates the individual back-drilling depth L2c based on the following formula, and automatically controls the machining depth of the back-drilling in the substrate processing apparatus.

L2c=Lnd×(L2m-αave)/L2d-td+角tan1 L2c=Lnd×(L2m-αave)/L2d-td+corner tan1

Lnd=設計上的基準餘長 Lnd=Design base length

L2m=提取載置於加工台上的下板上的多層印刷配線基板或其母板中,位於存在於下板的各區域之個別的座標值域內之各背鑽加工位置的實測高度 L2m=Extracting the measured height of each of the back-drilling processing positions in the individual coordinate value ranges of the respective regions existing in the respective regions of the lower plate in the multilayer printed wiring board or the mother board placed on the lower plate on the processing table

αave=加工台上的下板中之個別區域的測定點之實測高度的平均值 Aveave = average of the measured heights of the measured points of individual areas in the lower plate on the processing table

L2d=設計上的多層印刷配線基板厚度 L2d=Design multilayer printed wiring substrate thickness

td=設計上的預留誤差範圍的長度 Td=the length of the design's reserved error range

角tan1=穿孔的電鍍部之層的預定厚度×tan{(180度-鑽頭的前端角的角度)÷2} Angle tan1 = predetermined thickness of the layer of the perforated plated portion × tan {(180 degrees - angle of the tip angle of the drill bit) ÷ 2}

藉由此加工深度控制機構,可發揮以下之優點。 By processing the depth control mechanism, the following advantages can be achieved.

第一,將下板區分為個別的區域,對個別區域提取測定點,從該測定點的高度位置資訊計算出該區域的高度的平均值,而且,同時提取出存在於對應該區域的位置的基板的背鑽加工位置,可以藉由從該測定的高度扣除前述下板在該區域的高度的平均值(也就是計算式中的L2m-αave),正確地檢測出基板本身在該背鑽加工位 置的厚度。而由於此檢測出的基板本身在該背鑽加工位置的厚度與基板本身在設計上的厚度間的差異關係,與理想的導體層的基板的實際上的厚度位置與其設計上的厚度位置間的差異關係,具有相關關係,因此可藉由依據該相關關係進行修正,來認識到不破壞基板本身就不可能測定的理想的導體層的基板的實際上的厚度位置,進行更精密的背鑽加工。而且,基板的背鑽加工位置的高度資訊,可以利用進行背鑽加工的鑽頭所具有的前端角,藉由鑽頭的傾斜部接觸到設於穿孔的孔部的電鍍部相對於孔部的內側來檢測出來。同時,預留誤差範圍的上端部,是傾斜切削成為為相對於孔部的外側較長而內側較短,設計上的基準預留誤差範圍的長度是決定在此外側較長的部分。因此,可算出電鍍部也就是到達理想的導體層為止的餘長部的長度,從該長度扣除設計上的基準預留誤差範圍的長度後的位置,就決定在電鍍部外側。然而,由於鑽頭前端存在有傾斜部,且如前文所述,基板的高度位置的測定需要鑽頭的傾斜部接觸到設於穿孔的孔部的電鍍部相對於孔部的內側,因此若要進行背鑽加工到那個位置,必須加工到在電鍍部的內側比其外側更深的位置。也就是,相對於電鍍部的厚度其內側與外側會產生高度位置的偏差,該高度的偏差可藉由算出角tan1來修正。此等之結果,即使將作為殘存於背鑽加工後的穿孔中的設計值之預留誤差範圍設定為較短,也可以正確地實現預留誤差範圍的長度。因此,無需以較 大誤差為前提來設定預留誤差範圍,將預留誤差範圍本身設定為較短,以正確地實現其尺寸,可抑制因殘存的餘長部所造成的雜訊等不良狀況發生。而且,此加工深度控制機構可藉由對既存使用轉軸的鑽頭的下降距離資訊檢測機構追加記錄媒體、提取機構及算出機構來構成,故可以低成本改造具有下降距離資訊檢測機構的基板加工裝置。 First, the lower plate is divided into individual regions, the measurement points are extracted for the individual regions, the average value of the height of the region is calculated from the height position information of the measurement points, and the position existing in the corresponding region is simultaneously extracted. The back drilling processing position of the substrate can accurately detect the substrate itself in the back drilling processing by subtracting the average value of the height of the lower plate in the region from the height of the measurement (that is, L2m-αave in the calculation formula) The thickness of the location. And because of the difference between the thickness of the substrate itself in the back-drilling processing position and the thickness of the substrate itself, the actual thickness position of the substrate of the ideal conductor layer and the thickness position of the design. Since the difference relationship has a correlation relationship, it is possible to recognize the actual thickness position of the substrate of the ideal conductor layer which cannot be measured without destroying the substrate itself by performing correction according to the correlation relationship, and perform more precise back drilling processing. . Further, the height information of the back-drilling processing position of the substrate can be determined by the front end angle of the drill bit for performing the back-drilling process, and the inclined portion of the drill bit contacts the plating portion provided in the hole portion of the through hole with respect to the inner side of the hole portion. Detected. At the same time, the upper end portion of the reserved error range is such that the oblique cutting is longer with respect to the outer side of the hole portion and the inner side is shorter, and the length of the design reference error tolerance range is determined to be the longer portion on the outer side. Therefore, it is possible to calculate the length of the plating portion, that is, the length of the excess length portion before reaching the desired conductor layer, and the position after deducting the length of the design reference error range from the length is determined outside the plating portion. However, since the tip end of the drill bit has an inclined portion, and as described above, the measurement of the height position of the substrate requires that the inclined portion of the drill bit contacts the plating portion of the hole portion provided in the through hole with respect to the inner side of the hole portion, so that the back is to be performed. The drill is machined to that position and must be machined to a position deeper inside the plated portion than on the outside. That is, a deviation of the height position occurs between the inner side and the outer side with respect to the thickness of the plated portion, and the deviation of the height can be corrected by calculating the angle tan1. As a result of this, even if the predetermined error range of the design value remaining in the perforation after the back-drilling processing is set to be short, the length of the reserved error range can be correctly realized. Therefore, it is not necessary to set the reserved error range on the premise of a large error, and the reserved error range itself is set to be short so as to correctly realize the size thereof, and it is possible to suppress a problem such as noise caused by the remaining excess length portion. occur. Further, the machining depth control means can be configured by adding a recording medium, an extracting means, and a calculating means to the falling distance information detecting means of the drill which uses the rotating shaft, so that the substrate processing apparatus having the falling distance information detecting means can be modified at low cost.

第二,由於不是使用如探針等與鑽頭不同的個體來檢測下降距離資訊,而是以背鑽加工中使用的鑽頭本身來檢測下降距離資訊,因此可防止在檢測時成為高度方向之原點的零點位置之偏差所造成的誤差發生。 Secondly, since the descending distance information is not detected by an individual different from the drill such as a probe, the falling distance information is detected by the drill itself used in the back drilling process, thereby preventing the origin of the height direction at the time of detection. The error caused by the deviation of the zero position occurs.

第三,由於加工裝置方面是以電腦進行控制,因此在多層印刷配線基板方面無需進行特別的試樣或配線,可減少基板本身的製造成本。 Third, since the processing apparatus is controlled by a computer, it is not necessary to perform special samples or wiring on the multilayer printed wiring board, and the manufacturing cost of the substrate itself can be reduced.

另外,下降距離資訊檢測機構更具體來說,是至少具有高頻交流電源、具反應器的旁通電路、及高頻用的變流器,高頻交流電源之輸出之一側連接連接殼體,另一方經由前述變流器連接與殼體絕緣的轉軸,且在其與該該轉軸連接之間,設有具反應器的旁通電路連結殼體,藉由該轉軸之轉子之鑽頭接觸屬於導體之檢測對象物,使來自高頻交流電源的高頻電流經由變流器流入轉軸,再經由導體物及導體層間的靜電容量流入前述高頻交流電源,在變流器 的輸出側產生電流,並藉由以檢測器檢測出該電流的變化,而構成為可認識鑽頭的下降距離資訊。 In addition, the falling distance information detecting mechanism is more specifically a high-frequency AC power source, a bypass circuit with a reactor, and a high-frequency converter, and one side of the output of the high-frequency AC power source is connected to the connection housing. The other side is connected to the rotating shaft insulated from the casing via the aforementioned converter, and between the connection with the rotating shaft, a bypass circuit connecting casing with a reactor is provided, and the drill bit contact of the rotor of the rotating shaft belongs to The object to be detected by the conductor causes a high-frequency current from the high-frequency AC power source to flow into the rotating shaft via the current transformer, and flows into the high-frequency AC power source via the capacitance between the conductor and the conductor layer to generate a current on the output side of the converter. And by detecting the change of the current by the detector, the falling distance information of the drill bit can be recognized.

藉此,在判定轉軸的鑽頭前端有無接觸檢測對象物時,不管是在外在不良要因不容易發生狀況,或是即使發生,該外在不良要因對判定精度造成的影響較少的狀況,或是另設濾件等排除該外在不良要因的構成的狀況下,都可構成具有充分判定精度的下降距離資訊檢測機構,而且藉由在連接變流器的輸入捲線與轉軸的結線中間,設置連結殼體間的旁通電路,使轉軸不再是所謂的浮動金屬,而不必裝設防止觸電的保護機能。而且,藉此可進一步使諧波電流等電流經由鑽頭流往殼體,防止因該等電流所造成的鑽頭的金属面或鑽頭表面的覆膜破損,而可長期使用鑽頭。 Therefore, when it is determined whether or not there is a contact object to be detected at the tip end of the rotating shaft, the external defect is unlikely to occur, or even if it occurs, the external defect has little influence on the determination accuracy, or In the case where a filter or the like is excluded from the configuration of the external defect factor, a falling distance information detecting means having sufficient determination accuracy can be constructed, and a connection is provided between the input winding of the connected converter and the connecting line of the rotating shaft. The bypass circuit between the housings makes the shaft no longer a so-called floating metal, and it is not necessary to provide a protection function against electric shock. Further, it is possible to further cause a current such as a harmonic current to flow through the drill to the casing, thereby preventing damage to the metal surface of the drill or the surface of the drill due to the current, and the drill can be used for a long period of time.

另外,下降距離資訊檢測機構之另一種構成,可以是具有高頻交流電源、具反應器之旁通電路、消除電路(cancel circuit)、及具輸入捲線、消除捲線、及1個以上輸出捲線的高頻用變流器,前述輸入捲線與前述消除捲線是線圈數相同但捲繞方向相反,而消除電路具有逆旁通電路及複數套(set)的模擬電路,前述逆旁通電路是具有與旁通電路同一靜電容量的反應器,而各套模擬電路分別是以串聯配置的電容器與開關構成為一組,且將複數組的該電容器與開關並聯配置成為一個模擬電路,且當與殼體絕緣的轉軸有通電時,各套的模擬電路分別對應產生自轉軸的馬達的各相的捲 線與轉軸本體間、及轉軸本體與殼體間的各靜電容量,前述逆旁通電路與該複數套的模擬電路是並聯配置,藉由將檢測對象物固定於基板加工裝置的殼體內的加工台上,且前述高頻交流電源之輸出的一側連接前述殼體、另一側連接前述變流器的輸入捲線與消除捲線的中間,使該輸入捲線的另一端連接轉軸本體,同時經由旁通電路連接殼體,消除捲線的另一端並聯連接逆旁通電路的一端及各模擬電路的一端,逆旁通電路的另一端連接殼體,與轉軸本體絕緣的殼體與轉軸之間產生的靜電容量相對應的模擬電路的另一端連接殼體、與轉軸本體與馬達捲線之間產生的靜電容量相對應的模擬電路的另一端連接轉軸的馬達的各相的捲線,且調整模擬電路的開關使各對應的靜電容量成為概略相等,因在輸入捲線與消除捲線流動的電流而產生於前述變流器的磁束的方向相互抵消,而可從檢測器檢測出因轉軸的鑽頭前端與檢測對象物之接觸產生的電流的變化,作為輸出自變流器的電流的變化,而構成為可認識鑽頭的下降距離資訊。 In addition, another configuration of the falling distance information detecting mechanism may be a high-frequency AC power supply, a bypass circuit with a reactor, a cancel circuit, and an input winding, a winding elimination, and one or more output windings. In the high-frequency current transformer, the input winding wire and the eliminating winding wire are the same number of coils but the winding direction is opposite, and the eliminating circuit has an inverse bypass circuit and a plurality of sets of analog circuits, and the reverse bypass circuit has The bypass circuit has the same electrostatic capacity reactor, and each set of analog circuits is formed by a capacitor and a switch arranged in series, and the capacitor of the complex array is arranged in parallel with the switch as an analog circuit, and when the housing is When the insulated rotating shaft is energized, the analog circuits of the sets respectively correspond to the respective electrostatic capacitances between the winding line and the rotating shaft body of each phase of the motor that generates the rotating shaft, and between the rotating shaft body and the housing, and the reverse bypass circuit and the plurality of sets The analog circuit is arranged in parallel, by fixing the object to be detected on a processing table in the casing of the substrate processing apparatus, and the aforementioned high-frequency alternating current One side of the output is connected to the housing, and the other side is connected to the middle of the input winding and the unwinding line of the current converter, so that the other end of the input winding is connected to the rotating shaft body, and the housing is connected via the bypass circuit to eliminate the winding. The other end is connected in parallel with one end of the reverse bypass circuit and one end of each analog circuit, and the other end of the reverse bypass circuit is connected to the housing, and the analog circuit corresponding to the electrostatic capacitance generated between the housing and the rotating shaft insulated from the rotating shaft body is another The other end of the analog circuit corresponding to the electrostatic capacitance generated between the one end of the housing and the motor shaft winding is connected to the winding of each phase of the motor of the rotating shaft, and the switch of the analog circuit is adjusted so that the corresponding electrostatic capacitances are substantially equal. The direction of the magnetic flux generated in the current transformer due to the current flowing through the input winding and the eliminating winding is canceled, and the change in the current generated by the contact between the tip of the rotating shaft and the object to be detected can be detected from the detector. The change of the current output from the converter is configured to recognize the falling distance information of the drill bit.

另外,下降距離資訊檢測機構又有另一種構成,可以是具有高頻交流電源、具線圈數相同的兩個輸入捲線及一個以上輸出捲線的高頻用變流器、及模擬基板電路,該模擬基板電路是將串聯配置的電容器與開關為一組,而將複數組的該電容器與開關並聯配置,前述高頻交流電源之輸出的一側連接前述殼體且連接前述模擬 基板電路之一側端子,另一側經由前述變流器的兩個輸入捲線,連接檢測對象物及前述模擬基板電路之另一側端子,藉由調整模擬基板電路的開關,令與基板加工裝置的殼體絕緣地固定在殼體內的加工台上的檢測對象物與殼體間產生的靜電容量略相等,使各輸入捲線電流令前述變流器產生的磁束相互抵消,而可從檢測器檢測出因轉軸的鑽頭前端與檢測對象物之接觸產生的電流的變化,作為輸出自變流器的電流的變化,而構成為可認識鑽頭的下降距離資訊。 In addition, the falling distance information detecting mechanism has another configuration, and may be a high-frequency inverter having a high-frequency AC power supply, two input windings having the same number of coils, and one or more output windings, and an analog substrate circuit. The substrate circuit is a capacitor and a switch arranged in series, and the capacitor of the multiple array is arranged in parallel with the switch, and one side of the output of the high-frequency AC power source is connected to the housing and connected to one side terminal of the analog substrate circuit. The other side is connected to the other end of the analog substrate circuit via the two input winding wires of the current transformer, and is fixed to the housing of the substrate processing apparatus by adjusting the switch of the analog substrate circuit. The electrostatic capacitance generated between the object to be detected on the processing table in the casing and the casing is slightly equal, so that the input winding current causes the magnetic fluxes generated by the current transformer to cancel each other, and the front end of the drill shaft of the rotating shaft can be detected from the detector. A change in current generated by contact with the object to be detected is formed as a discernible drill as a change in current output from the converter Head drop distance information.

藉由使用具有這些構成的下降距離資訊檢測機構,可更容易地以轉軸的鑽頭本身進行高度位置正確且精密的測定,因而背鑽加工的加工深度控制可更精密地進行。又可以因此將背鑽加工後殘存於穿孔中的預留誤差範圍的長度限縮到最低。 By using the falling distance information detecting mechanism having these configurations, it is possible to more accurately and accurately measure the height position of the drill bit itself, and thus the machining depth control of the back drilling process can be performed more precisely. It is also possible to limit the length of the margin of error remaining in the perforations after back-drilling to a minimum.

另外,本發明也提供具備前述記載的任一種加工深度控制機構的基板加工裝置。 Moreover, the present invention also provides a substrate processing apparatus including any of the above-described processing depth control mechanisms.

另一方面,本發明也提供使用前述任一種基板加工裝置來進行的背鑽加工方法,其中:1.關於設計上的基板厚度、基準餘長及設計上的預留誤差範圍(殘留量)的長度,以及設於穿孔之孔部的電鍍層之層的預定厚度及鑽頭之尖端角之角度的數值資訊;2.載置於基板加工裝置的加工台上,且至少上表面構成為導體層的下板中,依下述設定所決定的測定點及各區域在平面上的座 標位置資訊,而該測定點是:格子狀地區分出複數的區域,以其各區域為單位,並以同一的基準決定的一個測定點,或是在其各區域中,對其各區域以同一的基準更進一步區分成格子狀的子區域,而以各子區域為單位,並以同一的基準決定的一個測定點;3.對於前述各測定點,藉由令進行背鑽加工的鑽頭所設置的轉軸下降,以前述下降距離資訊檢測機構所測定到的各測定點個別的高度位置資訊;4.存在於載置於基板加工裝置的加工台上的前述下板上的多層印刷配線基板上,或者是存在於切出複數的多層印刷配線基板前的母板(以下單稱為「母板」)上的各背鑽加工位置在平面上的座標位置資訊;5.藉由令前述轉軸下降至前述基板或是母板的各背鑽加工位置,以前述下降距離資訊檢測機構測定到的各個各背鑽加工位置個別的高度位置資訊。 In another aspect, the present invention also provides a back-drilling processing method using any of the foregoing substrate processing apparatuses, wherein: 1. regarding a substrate thickness, a reference margin, and a design margin (residual amount) in design The length, and the numerical information of the predetermined thickness of the layer of the plating layer provided on the hole portion of the perforation and the angle of the tip angle of the drill bit; 2. Loading on the processing table of the substrate processing apparatus, and at least the upper surface is configured as a conductor layer In the lower plate, the measurement point determined by the following setting and the coordinate position information of each area on the plane, and the measurement point is: the area in which the grid area is separated by a plurality of areas, in units of each area, and the same One measurement point determined by the reference, or a sub-region in which each region is further divided into a lattice-like sub-region on the same basis, and each sub-region is determined by the same reference. 3. For each of the above-mentioned measurement points, the height of each measurement point measured by the falling distance information detecting means is lowered by the rotation axis provided by the drill bit for performing the back drilling process. 4. The information is present on the multilayer printed wiring board on the lower plate placed on the processing table of the substrate processing apparatus, or on the mother board in front of the plurality of printed wiring boards (hereinafter referred to as Information on the coordinate position of each back-drilling processing position on the plane on the "mother board"; 5. By measuring the rotating shaft to the back-drilling processing position of the substrate or the mother board, the falling distance information detecting mechanism determines The individual height position information of each of the back drilling processing positions.

將以上1至5所分別記載的位置資訊等記錄於記錄媒體中,且從前述各區域個別的座標位置資訊、及存在於多層印刷配線基板或其母板上的背鑽加工位置個別的座標位置資訊,提取背鑽加工時下板上載置有多層印刷配線基板或其母板的狀態下,存在於前述下板的各區域各別的座標值域內的背鑽加工位置。 The position information and the like described in each of the above 1 to 5 are recorded on the recording medium, and the coordinate position information of each of the respective regions and the coordinate position of the back drilling processing position existing on the multilayer printed wiring board or the mother board thereof are recorded. In the state in which the multilayer printed wiring board or its mother board is placed on the lower board during the back-drilling process, the back-drilling processing position exists in each coordinate range of each area of the lower board.

再根據以下述算式自動算出的個別背鑽加工深度L2c,自動控 制基板加工裝置中背鑽加工的加工深度。 Further, the machining depth of the back drilling processing in the substrate processing apparatus is automatically controlled based on the individual back drilling processing depth L2c which is automatically calculated by the following formula.

L2c=Lnd×(L2m-αave)/L2d-td+角tan1 L2c=Lnd×(L2m-αave)/L2d-td+corner tan1

Lnd=設計上的基準餘長 Lnd=Design base length

L2m=提取載置於加工台上的下板上的多層印刷配線基板或其母板中,位於存在於下板的各區域之個別的座標值域內之各背鑽加工位置的實測高度 L2m=Extracting the measured height of each of the back-drilling processing positions in the individual coordinate value ranges of the respective regions existing in the respective regions of the lower plate in the multilayer printed wiring board or the mother board placed on the lower plate on the processing table

αave=加工台上的下板中之個別區域的測定點之實測高度的平均值 Aveave = average of the measured heights of the measured points of individual areas in the lower plate on the processing table

L2d=設計上的多層印刷配線基板厚度 L2d=Design multilayer printed wiring substrate thickness

td=設計上的預留誤差範圍的長度 Td=the length of the design's reserved error range

角tan1=穿孔的電鍍部之層的預定厚度×tan{(180度-鑽頭的前端角的角度)÷2} Angle tan1 = predetermined thickness of the layer of the perforated plated portion × tan {(180 degrees - angle of the tip angle of the drill bit) ÷ 2}

藉由如前述方式使用此基板加工裝置,可以不增加多餘的製造成本,配合各基板的背鑽加工位置進行更正確且精密的加工,即便將作為設計值在背鑽加工後殘存於穿孔之預留誤差範圍設定為較短,也可以正確地實現該預留誤差範圍。因此,無須以大誤差為前提來決定預留誤差範圍,而藉由將預留誤差範圍本身設定為較短,來正確地實現其尺寸,可抑制因餘長部所產生的雜訊等不良狀況發生。 By using the substrate processing apparatus as described above, it is possible to perform more accurate and precise processing in accordance with the back-drilling processing position of each substrate without increasing the unnecessary manufacturing cost, even if it is a design value remaining in the perforation after the back-drilling process. The error margin is set to be shorter, and the reserved error range can also be correctly implemented. Therefore, it is not necessary to determine the reserved error range on the premise of a large error, and the size of the reserved error range itself is set to be short to correctly realize the size, and the noise caused by the residual portion can be suppressed. occur.

而且,雖然是以令鑽頭的前端進行到穿孔的孔部來切削電鍍 部,鑽頭中切削電鍍部的是傾斜部而非其前端角頂部。因此,不只是鑽頭的前端角頂部的位置與畫出餘長部之預留誤差範圍的鑽頭的傾斜部的位置間會發生偏差,預留誤差範圍的上端部會被傾斜切削成為相對於孔部的外側較長而內側較短。因此,雖然基準預留誤差範圍的長度是決定在相對於孔部在外側的前端位置,但其成為預留誤差範圍的電鍍部的內側與外側的高度的偏差,是藉由算出相對於電鍍部的所定厚度之角tan1算出來修正。也就是,藉由以穿孔的電鍍部之層的預定厚度×tan{(180度-鑽頭之前端角的角度)÷2}所算出的數值作計算上的修正,而可以更精密地進行背鑽加工的加工深度控制。 Further, although the plating portion is cut by the end portion of the drill to the perforated hole portion, the cutting portion of the drill is the inclined portion instead of the tip end corner portion. Therefore, not only the position of the top end of the front end corner of the drill bit but also the position of the inclined portion of the drill bit in which the margin of error is drawn, the upper end portion of the reserved error range is obliquely cut to be relative to the hole portion. The outer side is longer and the inner side is shorter. Therefore, although the length of the reference reservation error range is determined at the front end position on the outer side with respect to the hole portion, the deviation between the inner side and the outer side of the plating portion which is the predetermined error range is calculated by referring to the plating portion. The angle tan1 of the predetermined thickness is calculated and corrected. That is, the back-drilling can be performed more precisely by calculating the value calculated by the predetermined thickness of the layer of the perforated plated portion × tan {(180 degrees - the angle of the tip angle of the drill bit) ÷ 2} Machining depth control.

另外,使用前述任一種基板加工裝置進行的背鑽加工方法,可以是:1.關於設計上的基板厚度、基準餘長及設計上的預留誤差範圍(殘留量)的長度,以及在未設置電鍍部的要進行背鑽加工的穿孔的孔部之半徑及鑽頭之尖端角之角度的數值資訊;2.載置於基板加工裝置的加工台上,且至少上表面構成為導體層的下板中,依下述設定所決定的測定點及各區域在平面上的座標位置資訊,而該測定點是:格子狀地區分出複數的區域,以其各區域為單位,並以同一的基準決定的1個測定點,或是在其各區域中,對其各區域以同一的基準更進一步區分成格子狀的子區域,而以各 子區域為單位,並以同一的基準決定的一個測定點;3.對於前述各測定點,藉由令進行背鑽加工的鑽頭所設置的轉軸下降,以前述下降距離資訊檢測機構所測定到的各測定點個別的高度位置資訊;4.存在於載置於基板加工裝置的加工台上的前述下板上的多層印刷配線基板上,或者是存在於切出複數的多層印刷配線基板前的母板(以下單稱為「母板」)上的各背鑽加工位置在平面上的座標位置資訊;5.在前述基板或是母板上載置有厚度已知的鋁材上板的狀態下,藉由令前述轉軸下降至其各背鑽加工位置,以前述下降距離資訊檢測機構測定到的各個各背鑽加工位置個別的高度位置資訊。 In addition, the back-drilling processing method using any of the above-described substrate processing apparatuses may be: 1. the length of the substrate thickness, the reference residual length, and the design reserved error range (residual amount) of the design, and not set. Numerical information of the radius of the perforated hole portion of the plating portion to be back-drilled and the angle of the tip angle of the drill bit; 2. placed on the processing table of the substrate processing apparatus, and at least the upper surface is configured as a lower layer of the conductor layer The measurement point determined by the following setting and the coordinate position information of each area on the plane, and the measurement point is: a region in which a plurality of grid-shaped regions are separated, determined by each region, and determined on the same basis One measurement point or one measurement point determined by dividing the sub-region into a grid on the same basis for each region in the respective regions and determining the same sub-region 3. For each of the above-mentioned measurement points, the height of each measurement point measured by the lowering distance information detecting means is lowered by lowering the rotating shaft provided by the drill bit for back drilling processing. 4. The motherboard is placed on the multilayer printed wiring board on the lower board placed on the processing table of the substrate processing apparatus, or is present on the mother board in front of the plurality of multilayer printed wiring boards (hereinafter referred to as " Information on the coordinate position of each back-drilling processing position on the mother board"; 5. In the state where the substrate or the mother board is placed with the aluminum upper plate of a known thickness, the rotating shaft is lowered to Each of the back-drilling processing positions is an individual height position information of each of the back-drilling processing positions measured by the falling distance information detecting means.

將以上1至5所分別記載的位置資訊等記錄於記錄媒體中,且從前述各區域個別的座標位置資訊、及存在於多層印刷配線基板或其母板上的背鑽加工位置個別的座標位置資訊,提取背鑽加工時下板上載置有多層印刷配線基板或其母板的狀態下,存在於前述下板的各區域各別的座標值域內的背鑽加工位置。 The position information and the like described in each of the above 1 to 5 are recorded on the recording medium, and the coordinate position information of each of the respective regions and the coordinate position of the back drilling processing position existing on the multilayer printed wiring board or the mother board thereof are recorded. In the state in which the multilayer printed wiring board or its mother board is placed on the lower board during the back-drilling process, the back-drilling processing position exists in each coordinate range of each area of the lower board.

再根據以下述算式自動算出的個別背鑽加工深度L2c,自動控制基板加工裝置中背鑽加工的加工深度。 Further, the machining depth of the back drilling process in the substrate processing apparatus is automatically controlled based on the individual back drilling depth L2c automatically calculated by the following formula.

L2c=Lnd×(L2m1-αave-tAL)/L2d-td+tAL+角tan2 L2c=Lnd×(L2m1-αave-tAL)/L2d-td+tAL+corner tan2

Lnd=設計上的基準餘長 Lnd=Design base length

L2m1=載置於加工台上的下板上的多層印刷配線基板或其母板上,更載置固定有厚度已知的鋁材上板的狀態下,提取作為存在於下板的各區域之個別的座標值域內者的各背鑽加工位置的實測高度 L2m1=Multilayer printed wiring board or its mother board placed on the lower plate on the processing table, and further mounted on the upper surface of the aluminum plate with a known thickness, and extracted as each region existing in the lower plate Measured height of each back-drilling machining position in an individual coordinate range

αave=加工台上的下板中之個別區域的測定點之實測高度的平均值 Aveave = average of the measured heights of the measured points of individual areas in the lower plate on the processing table

L2d=設計上的多層印刷配線基板厚度 L2d=Design multilayer printed wiring substrate thickness

td=設計上的預留誤差範圍的長度 Td=the length of the design's reserved error range

tAL=鋁材上板的規定厚度 tAL=Specified thickness of the upper plate of aluminum

角tan2=未設電鍍部的穿孔的預定厚度×tan{(180度-鑽頭的前端角的角度)÷2} Angle tan2=predetermined thickness of perforation without plating portion × tan{(180 degrees - angle of front end angle of drill bit) ÷ 2}

藉此,可防止以下的誤差發生,而可進行精密的背鑽加工。也就是,第一,因背鑽加工位置上存在有穿孔的孔部而有開口,也就是基板表面的孔部部分已經不存在有導體層,且鑽頭前端是具有前端角的前端角頂部,因此在開始背鑽加工時,可能發生穿孔的孔部的中心與進行背鑽加工的鑽頭的中心之芯偏差。而在發生此芯偏差時,由於不能正確地測定背鑽加工位置的基板高度造成該數值本身與實際的高度位置發生誤差,而造成以該數值為前提計算出的個別的背鑽頭的加工深度也發生誤差。因此,為了使方一發生此芯偏差時,也不會發生這些誤差,測定包含了載置於基板上的鋁材上 板的高度位置,最終再對該鋁材上板的厚度進行計算上的修正。第二,如前述因背鑽加工位置存在有穿孔的孔部而有開口,因此在背鑽加工中也可能發生鑽頭斜行而造成的芯偏差。而在該芯偏差發生的狀況下,進行背鑽加工的加工深度控制時,電鍍部的預留誤差範圍的長度就未能成為依照控制的結果,而發生誤差。因此,在基板上載置有鋁材上板的狀態下進行背鑽加工,也是為了防止背鑽加工中鑽頭斜行。第三,相對於藉由鑽頭的前端角頂部接觸鋁材上板,來測定包含有載置於基板上的鋁材上板的高度位置,藉由令鑽頭的前端在穿孔的孔部移動來切削電鍍部時鑽頭中是傾斜部切削電鍍部,而非該前端角頂部。因此,鑽頭的前端角頂部的位置,與界定餘長部的預留誤差範圍(預留誤差範圍的上端部是傾斜切削成為相對於孔部的外側較長而內側較短,而預留誤差範圍的長度是決定在相對於孔部在外側的前端位置)之傾斜部的位置之間會發生偏差。此偏差正是角tan2,也就是相當於未設置電鍍部的要穿孔的半徑×tan{(180度-鑽頭之前端角的角度)÷2},在前述方法中,從計算上修正此偏差,而可正確且精密地進行背鑽加工的加工深度的控制。 Thereby, the following error can be prevented, and precise back drilling processing can be performed. That is, first, there is an opening due to the presence of the perforated hole portion in the back drilling processing position, that is, the hole portion of the substrate surface has no conductor layer, and the front end of the drill bit is the front end corner top having the front end angle, At the start of the back-drilling process, the center of the hole portion where the perforation may occur is deviated from the center of the center of the drill bit subjected to the back-drilling process. When this core deviation occurs, the value of the substrate itself and the actual height position may be incorrectly determined due to the inability to correctly measure the height of the substrate in the back-drilling processing position, and the processing depth of the individual back bit calculated on the premise of the value is also An error has occurred. Therefore, in order to cause the core deviation to occur, these errors do not occur, and the height position of the upper plate of the aluminum material placed on the substrate is measured, and finally the thickness of the upper plate of the aluminum material is calculated. Corrected. Secondly, as described above, there is an opening in which the perforated hole portion exists in the back drilling processing position, so that the core deviation caused by the skew of the drill bit may occur in the back drilling process. In the case where the core deviation occurs, when the machining depth control of the back drilling process is performed, the length of the reserved error range of the plating portion fails to be a result of the control, and an error occurs. Therefore, the back drilling process is performed in a state in which the aluminum upper plate is placed on the substrate, in order to prevent the drill from being skewed during the back drilling process. Thirdly, the height position of the upper plate of the aluminum material loaded on the substrate is measured by contacting the top plate of the aluminum material with the top end of the drill bit, and the tip end of the drill bit is moved in the hole of the perforation. In the plating section, the drill portion is an inclined portion cutting plating portion instead of the front end corner portion. Therefore, the position of the top end of the drill bit and the reserved error range defining the remaining length portion (the upper end portion of the reserved error range is inclined to be longer than the outer side of the hole portion and the inner side is shorter, and the margin of error is reserved) The length is determined to vary between the positions of the inclined portions at the front end position with respect to the hole portion. This deviation is the angle tan2, which is equivalent to the radius to be perforated without the plating portion × tan {(180 degrees - the angle of the front end angle of the drill bit) ÷ 2}, in the foregoing method, the deviation is calculated from the calculation, The machining depth of the back drilling process can be controlled accurately and precisely.

又另外前述背鑽加工方法可以在背鑽加工時,在載置於加工台上的下板上的多層印刷配線基板或其母板上,更載置厚度已知的鋁材上板,又更於其上載置可以轉軸來切削的具絕緣性的上 板。 In addition, the foregoing back-drilling processing method can further mount an aluminum-on-board having a known thickness on a multilayer printed wiring board or a mother board on a lower plate placed on a processing table during back-drilling processing, and further An insulating upper plate that can be cut by a rotating shaft is placed thereon.

藉此,可防止以下的誤差發生,而可連續地進行更正確且精密的背鑽加工。也就是,因為進行背鑽加工的行穿孔的孔內面經電鍍加工而形成有電鍍部,因此若進行背鑽加工則會從其導電性的電鍍部產生線狀的切屑附著在鑽頭上。因此,若使用附著有該切屑的鑽頭,於背鑽加工的事前準備時進行下板或基板等的高度測定,則會因此附著的導電性切屑造成測定誤差。藉由在絕緣性的上板上載置鋁材上板,可在之後的背鑽加工中,產生來自於從絕緣性上板的切屑,可將此附著在鑽頭上的切屑推開而自動地使其離開鑽頭。藉此,即使使用此鑽頭接著進行下板或基板的高度測定,也可以防止因電鍍部的切屑所造成的誤差。 Thereby, the following error can be prevented, and more accurate and precise back-drilling processing can be continuously performed. That is, since the inner surface of the hole through which the back drilling is performed is subjected to plating processing to form the plating portion, if the back drilling process is performed, linear chips are generated from the conductive plating portion and adhere to the drill. Therefore, when the drill to which the chip is attached is used, the height of the lower plate or the substrate is measured during the preparation of the back-drilling process, and the measurement error caused by the conductive chips adhering thereto is caused. By placing the aluminum upper plate on the insulating upper plate, it is possible to generate chips from the insulating upper plate in the subsequent back-drilling process, and the chips attached to the drill can be pushed away to automatically It leaves the drill bit. Thereby, even if the height of the lower plate or the substrate is measured using the drill, it is possible to prevent an error caused by the chips of the plating portion.

請求項1中記載的發明之背鑽加工的加工深度控制機構,由於可以低成本、正確且精密地控制對於基板進行背鑽加工的加工深度,因此不但可以消除加工後的基板所造成的雜訊等不良狀況,且具有可以低成本製造基板本身的優異效果。另外,由於該加工深度控制機構可藉由對現存具有下降距離資訊檢測機構的基板加工裝置進行追加來製成,因此具有可提供低成本且可達成正確且精密的背鑽加工的基板加工裝置的效果。 According to the processing depth control mechanism of the back-drilling process of the invention of claim 1, since the depth of the back-drilling process for the substrate can be controlled at a low cost, accurately and precisely, the noise caused by the processed substrate can be eliminated. Such an unfavorable situation has an excellent effect of being able to manufacture the substrate itself at low cost. Further, since the machining depth control mechanism can be manufactured by adding a substrate processing apparatus having a falling distance information detecting mechanism, it is possible to provide a substrate processing apparatus which can provide a low-cost and accurate and precise back drilling process. effect.

請求項2記載的發明之背鑽加工的加工深度控制機構,除了可令簡單構成的下降距離資訊檢測機構達成更精密的加工深度 控制,且可以在確保對於觸電的安全性,同時不損及鑽頭的壽命。 The machining depth control mechanism of the back-drilling process of the invention described in claim 2 can achieve more precise machining depth control by the simple falling distance information detecting mechanism, and can ensure the safety against electric shock without damaging the drill bit. Life expectancy.

請求項3至4所記載的發明之背鑽加工的加工深度控制機構,皆可以排除下降距離資訊檢測機構的外在不良要因,而具有可更輕易地作精密的加工深度控制的優異效果。 The processing depth control mechanism for the back-drilling processing of the invention described in claims 3 to 4 can eliminate the external disadvantage of the falling distance information detecting mechanism, and has an excellent effect that the machining depth control can be more easily performed.

請求項5記載的發明之基板加工裝置及請求項6記載的發明之背鑽加工方法,皆可以低成本、正確且精密地控制對於基板進行背鑽加工的加工深度,不但可以消除加工後的基板所造成的雜訊等不良狀況,且具有可以低成本製造基板本身的優異效果。 According to the substrate processing apparatus of the invention of claim 5 and the back-drilling processing method of the invention of claim 6, the processing depth of the back-drilling process for the substrate can be controlled at a low cost, accurately and precisely, and the processed substrate can be eliminated. The resulting noise and other undesirable conditions have an excellent effect of being able to manufacture the substrate itself at low cost.

請求項7記載的發明之背鑽加工方法,可以低成本消除芯偏差所造成的測定誤差,而具有可更輕易地作精密的加工深度控制的優異效果。 According to the back-drilling method of the invention described in claim 7, the measurement error caused by the core deviation can be eliminated at low cost, and the excellent effect of the precise processing depth control can be performed more easily.

請求項8記載的發明之背鑽加工方法,具有可以連續地進行精密的加工深度控制的優異效果。 The back-drilling method of the invention described in claim 8 has an excellent effect of being able to continuously perform precise machining depth control.

A‧‧‧基板加工裝置 A‧‧‧Substrate processing equipment

B‧‧‧基板加工裝置 B‧‧‧Substrate processing equipment

C‧‧‧基板加工裝置 C‧‧‧Substrate processing equipment

K‧‧‧下降距離資訊檢測機構 K‧‧‧Drop distance information testing agency

K1‧‧‧下降距離資訊檢測機構 K1‧‧‧Drop distance information testing agency

K2‧‧‧下降距離資訊檢測機構 K2‧‧‧Drop distance information testing agency

a‧‧‧轉軸 A‧‧‧ shaft

1‧‧‧轉軸本體 1‧‧‧Rotary body

2‧‧‧轉子 2‧‧‧Rotor

3‧‧‧鑽頭 3‧‧‧ drill bit

3-1‧‧‧前端角頂部 3-1‧‧‧ front end corner top

3-2‧‧‧傾斜部 3-2‧‧‧ inclined section

4‧‧‧檢測裝置 4‧‧‧Detection device

5‧‧‧旁通電路 5‧‧‧Bypass circuit

6‧‧‧高頻發振器 6‧‧‧High frequency oscillator

7‧‧‧變流器 7‧‧‧Converter

7a‧‧‧變流器 7a‧‧‧Transformer

7b‧‧‧變流器 7b‧‧‧converter

8‧‧‧檢波電路 8‧‧‧Detection circuit

9‧‧‧檢測器 9‧‧‧Detector

10‧‧‧消除電路 10‧‧‧Remove circuit

11‧‧‧GND線 11‧‧‧ GND line

12‧‧‧輸出線 12‧‧‧ Output line

13‧‧‧輸入捲線 13‧‧‧Input winding

13a‧‧‧輸入捲線 13a‧‧‧Input winding

14‧‧‧消除捲線 14‧‧‧Removing the coil

15‧‧‧鐵心 15‧‧‧ iron core

16‧‧‧輸出捲線 16‧‧‧ Output winding

17-1‧‧‧模擬電路 17-1‧‧‧ Analog Circuit

17-2‧‧‧模擬電路 17-2‧‧‧ Analog Circuit

17-3‧‧‧模擬電路 17-3‧‧‧ Analog Circuit

17-4‧‧‧模擬電路 17-4‧‧‧ Analog Circuit

18‧‧‧逆旁通電路 18‧‧‧Reverse bypass circuit

20‧‧‧電容器 20‧‧‧ capacitor

21‧‧‧雙行組件開關 21‧‧‧Double row component switch

22‧‧‧三相馬達 22‧‧‧Three-phase motor

23‧‧‧U相的捲線 23‧‧‧U-phase winding

24‧‧‧V相的捲線 24‧‧‧V phase winding

25‧‧‧W相的捲線 25‧‧‧W phase winding

26‧‧‧加工台 26‧‧‧Processing table

27‧‧‧殼體 27‧‧‧Shell

28‧‧‧反相器 28‧‧‧Inverter

29‧‧‧柱體 29‧‧‧Cylinder

30‧‧‧絕緣物 30‧‧‧Insulators

31‧‧‧Z軸驅動裝置 31‧‧‧Z-axis drive

32‧‧‧接地 32‧‧‧ Grounding

50‧‧‧電容器 50‧‧‧ capacitor

51‧‧‧雙行組件開關 51‧‧‧Double row component switch

52‧‧‧模擬基板電路 52‧‧‧Simulated substrate circuit

101‧‧‧基板 101‧‧‧Substrate

102‧‧‧第一內裝導體層 102‧‧‧First built-in conductor layer

103‧‧‧第一絕緣層 103‧‧‧First insulation

104‧‧‧第二絕緣層 104‧‧‧Second insulation

105‧‧‧第三絕緣層 105‧‧‧third insulation

106‧‧‧第二內裝導體層 106‧‧‧Second built-in conductor layer

107‧‧‧表面導體層 107‧‧‧Surface conductor layer

108‧‧‧表面導體層 108‧‧‧Surface conductor layer

109‧‧‧孔部 109‧‧‧ Hole Department

109-1‧‧‧孔部 109-1‧‧‧ Hole Department

109-2‧‧‧孔部 109-2‧‧‧ Hole Department

110‧‧‧電鍍部 110‧‧‧Electroplating Department

110-1‧‧‧預留誤差範圍 110-1‧‧‧Reserved error range

111‧‧‧下板 111‧‧‧ Lower board

112‧‧‧下板上面銅箔層 112‧‧‧ Copper foil layer on the lower plate

201‧‧‧區域 201‧‧‧Area

202‧‧‧子區域 202‧‧‧Sub-area

203‧‧‧測定點 203‧‧‧Measurement point

301‧‧‧鋁材上板 301‧‧‧Aluminum board

302‧‧‧電木上板 302‧‧‧Bakelite board

V‧‧‧商用電源 V‧‧‧Commercial power supply

L‧‧‧反應器 L‧‧‧Reactor

L'‧‧‧反應器 L ' ‧‧‧Reactor

R‧‧‧阻抗 R‧‧‧ impedance

R'‧‧‧阻抗 R ' ‧‧‧ impedance

S‧‧‧CNC控制電路 S‧‧‧CNC control circuit

S1‧‧‧記錄媒體 S1‧‧‧record media

S2‧‧‧提取機構 S2‧‧‧ extraction agency

S3‧‧‧算出機構 S3‧‧‧ Calculation agency

q‧‧‧電鍍部之層的預訂厚度 q‧‧‧Booking thickness of the layer of the plating department

θ‧‧‧鑽頭之前端角的角度 Θ‧‧‧ Angle of the front end angle of the drill bit

圖1是顯示具備本申請案之發明的實施例1所示之加工深度控制機構的基板加工裝置之構成的略示圖;圖2是顯示作為檢測對象物之基板的構造的略示圖;圖3是顯示下板由假想線所區分出的區域的分割狀況的略示 圖;圖4是顯示本實施例1的背鑽加工時,鑽頭前端部分的部分放大圖,且是顯示尺寸狀況的略示圖;圖5是圖4更進一步的放大圖;圖6是顯示本實施例2的背鑽加工時之尺寸狀況的略示圖;圖7是圖6的部分放大圖;圖8顯示具備本實施例3所示的加工深度控制機構的基板加工裝置中,除了CNC控制電路以外,轉軸與下降距離資訊檢測機構之電路的略示圖;圖9顯示具備本實施例所示的加工深度控制機構的基板加工裝置中,除了CNC控制電路以外,轉軸與下降距離資訊檢測機構之電路的略示圖。 1 is a schematic view showing a configuration of a substrate processing apparatus including a processing depth control mechanism according to a first embodiment of the present invention; and FIG. 2 is a schematic view showing a configuration of a substrate as a detection target; 3 is a schematic view showing a division state of a region in which the lower plate is distinguished by an imaginary line; and FIG. 4 is a partially enlarged view showing a front end portion of the drill bit in the back drilling process of the first embodiment, and is a schematic display of the dimensional condition. Figure 5 is a further enlarged view of Figure 4; Figure 6 is a schematic view showing the dimensional condition of the back-drilling process of the second embodiment; Figure 7 is a partial enlarged view of Figure 6; In the substrate processing apparatus of the processing depth control mechanism shown in the third embodiment, in addition to the CNC control circuit, a schematic diagram of the circuit of the rotating shaft and the falling distance information detecting mechanism; and FIG. 9 shows the processing depth control mechanism shown in this embodiment. In the substrate processing apparatus, in addition to the CNC control circuit, a schematic diagram of the circuit of the rotation axis and the falling distance information detecting mechanism is shown.

本發明之目的是對於背鑽加工,以低成本提高加工深度的控制精度,並將穿孔中可能造成雜訊等不良狀況發生的殘留量降到最低限度。本發明藉由使用以鑽頭本身檢測出下降距離資訊的下降距離資訊檢測機構,在排除加工台本身或下板的傾斜或撓曲等所造成的誤差,以及個別基板本身與設計值間存在的誤差所造成的影響為前提下決定測定處所並將其測定數值代入特定的計算式中,以 更正確地把握理想的導體層的位置,實現更正確且精密地控制背鑽加工到達該計算出的加工深度為止的距離之目的。而此計算式是奠基於基板內部的理想的導體層在設計上的厚度位置與實際上的厚度位置間的關係,與基板本身在設計上的厚度與實際上的厚度間的關係,此兩種關係間又具有相關關係的認知上。如此,為更加提高加工深度控制中的正確性,測定基板進行背鑽加工的位置,與位於該進行背鑽加工的位置之正下方的下板位置之個別的高度位置,而計算出該背鑽加工位置的基板的厚度即可,但這需要不必要的時間與成本,因此將下板區分成一定的個別區域,藉由求出其中的平均值,視為計算出基板的厚度。這是為了兼顧時間及成本與正確性。 SUMMARY OF THE INVENTION An object of the present invention is to improve the control accuracy of a machining depth at a low cost for back-drilling processing, and to minimize the amount of residuals in a perforation that may cause a problem such as noise. The present invention eliminates the error caused by the tilting or deflection of the processing table itself or the lower plate, and the error between the individual substrate itself and the design value by using the falling distance information detecting mechanism that detects the falling distance information by the drill bit itself. The influence is determined on the basis of the determination of the location and the measured value is substituted into a specific calculation formula to more accurately grasp the position of the ideal conductor layer, so as to achieve more accurate and precise control of the back-drilling process to the calculated machining. The purpose of the distance to the depth. The calculation formula is based on the relationship between the thickness position of the ideal conductor layer in the design of the substrate and the actual thickness position, and the relationship between the design thickness and the actual thickness of the substrate itself. There is a cognitive relationship between the relationships. In this way, in order to further improve the accuracy in the machining depth control, the position of the back-drilling process of the substrate is measured, and the back-drill is calculated at an individual height position of the lower plate position directly below the position where the back-drilling is performed. The thickness of the substrate at the processing position is sufficient, but this requires unnecessary time and cost. Therefore, the lower plate is divided into a certain individual regions, and the average value thereof is determined to calculate the thickness of the substrate. This is to balance time and cost with correctness.

另外,以防止因芯偏差所造成的誤差發生為目的,本發明是藉由將鋁材上板載置於基板上進行背鑽加工來達成,而且,在基板上載置鋁材上板連續地進行背鑽加工時產生的不良狀況,可以藉由在該鋁材上板上更加載置絕緣性的上板來消除。 Further, in order to prevent the occurrence of an error caused by the core deviation, the present invention is achieved by back-drilling the aluminum material on the substrate, and further, the aluminum substrate is continuously placed on the substrate. The problem of the back-drilling process can be eliminated by further loading the insulating upper plate on the aluminum upper plate.

實施例1 Example 1

圖1是顯示具備有本申請案之發明之實施例之下降距離資訊檢測機構K之基板加工裝置A的略示圖。a為轉軸,設於檢測對象物之基板101的上側,由轉軸本體1、轉子2、及鑽頭3所構成。轉子2是由陶瓷軸承相對支持於轉軸本體1,鑽頭3是受該該轉子2支持且使用於背鑽加工。另外,該轉軸中也可以使用空氣軸承取代陶瓷軸 承。A是以該轉軸a進行背鑽加工的基板加工裝置。而轉軸a的下降距離資訊檢測機構K(以下稱檢測機構K),是檢測作為檢測對象物之基板101相對於轉軸a的高度位置資訊者,具體化成為以電路連接轉軸a的檢測裝置4。又,本實施例中只顯示1支轉軸a,但基板加工裝置通常裝備有複數的轉軸,以對同樣的基板進行複數同時加工。因此,檢測裝置4的具備數量是構成為對應該複數轉軸的數量,而具有同樣數量。然而,轉軸a是經由絕緣物30固定於柱體29,而該柱體29是藉由驅動裝置(圖未示)可相對於殼體27移動自如,因此轉軸a本身相對於基板加工裝置A的殼體27,是固定成為可在X軸方向(紙面上的橫方向)移動自如。另外,在Z軸方向(紙面上的上下方向)上,是藉由Z軸驅動裝置31個別地驅動。另一方面,在Y軸方向(紙面上的深度方向),是加工台26藉由驅動裝置(圖未示)移動自如,而是構成為與固定於該處的基板101連動來移動。而且,柱體29與殼體27導通,加工台26也與殼體27導通(其導通關係在圖1中是以虛線連接來顯示)。 Fig. 1 is a schematic view showing a substrate processing apparatus A equipped with a falling distance information detecting mechanism K of an embodiment of the invention of the present application. a is a rotating shaft, and is provided on the upper side of the substrate 101 of the object to be detected, and is composed of a rotating shaft main body 1, a rotor 2, and a drill 3. The rotor 2 is relatively supported by a shaft bearing 1 by a ceramic bearing supported by the rotor 2 and used for back drilling. In addition, an air bearing can be used in the shaft instead of the ceramic bearing. A is a substrate processing apparatus that performs back drilling processing on the rotating shaft a. The falling distance information detecting means K (hereinafter referred to as detecting means K) of the rotating shaft a is a detecting means 4 for detecting the height position information of the substrate 101 as the detecting object with respect to the rotating shaft a, and is embodied by the circuit connecting the rotating shaft a. Further, in the present embodiment, only one rotating shaft a is shown, but the substrate processing apparatus is usually equipped with a plurality of rotating shafts for performing multiple simultaneous processing on the same substrate. Therefore, the number of the detecting devices 4 is configured to correspond to the number of the plurality of rotating shafts, and has the same number. However, the rotating shaft a is fixed to the cylinder 29 via the insulator 30, and the cylindrical body 29 is movable relative to the housing 27 by a driving device (not shown), so that the rotating shaft a itself is opposite to the substrate processing device A. The casing 27 is fixed so as to be movable in the X-axis direction (the horizontal direction on the paper surface). Further, in the Z-axis direction (up and down direction on the paper surface), the Z-axis driving device 31 is individually driven. On the other hand, in the Y-axis direction (depth direction on the paper surface), the processing table 26 is movable by a driving device (not shown), and is configured to move in conjunction with the substrate 101 fixed thereto. Further, the cylinder 29 is electrically connected to the casing 27, and the processing table 26 is also electrically connected to the casing 27 (the conduction relationship is shown by a broken line connection in Fig. 1).

又,轉軸a內藏有3相馬達22,該3相馬達22是經由3相200V之商用電源V與反相器28,來連接其各相。 Further, the rotating shaft a houses a three-phase motor 22 which is connected to each phase via a three-phase 200V commercial power source V and an inverter 28.

轉軸a是經由下降距離資訊檢測機構K內的旁通電路5連接殼體,相對於商用頻率或反相器28的輸出電壓所具有的諧波,與殼體27是相對低電阻,與來自高頻發振器6的電流的頻率是相對高電 阻。由於轉軸a的轉子2是以陶瓷軸承相對支持於轉軸本體1,各轉軸本體1與轉子2間是絕緣的。但是,各轉軸本體1與轉子2之間存在有靜電容量CR,因此可以說是高頻地導通(又,圖1中為顯示靜電容量CR存在,顯示以轉軸本體1與轉子2之間經由電容器以虛線連接,此記載只不過是概略地顯示轉軸本體1與轉子2間存在有靜電容量CR,實際上未必存在任何連接或零件)。同様地,轉軸本體1與柱體29之間存在有靜電容量CS(又,由於柱體29與殼體27相導通,而成為與殼體27相同電位,為了便於製圖,靜電容量CS是記載於轉軸本體1與殼體27之間),另外,轉軸本體1與各馬達捲線23、24、25之間也分別存在有靜電容量CU、CV、CW,而且後述的下板111之下板上面銅箔層112與加工台26之間也存在有靜電容量CP。 The rotating shaft a is connected to the casing via the bypass circuit 5 in the falling distance information detecting mechanism K, and has a relatively low resistance to the casing 27 with respect to the commercial frequency or the harmonic of the output voltage of the inverter 28, and is derived from the high frequency. The frequency of the current of the vibrator 6 is relatively high resistance. Since the rotor 2 of the rotating shaft a is relatively supported by the rotating shaft body 1 by the ceramic bearing, the respective rotating shaft body 1 and the rotor 2 are insulated. However, since the electrostatic capacitance CR exists between each of the rotating shaft main body 1 and the rotor 2, it can be said that it is electrically connected at a high frequency (again, in FIG. 1, the electrostatic capacitance CR is present, and it is shown that the capacitor between the rotating shaft main body 1 and the rotor 2 passes through the capacitor. Connected by a broken line, this description simply shows that the electrostatic capacitance CR exists between the rotating shaft main body 1 and the rotor 2, and in fact, there is not necessarily any connection or part). At the same time, there is a capacitance CS between the shaft main body 1 and the column body 29 (again, since the column body 29 is electrically connected to the casing 27, it has the same potential as the casing 27, and the capacitance CS is described in order to facilitate drawing. The shaft main body 1 and the casing 27 are respectively provided with electrostatic capacitances CU, CV, and CW between the shaft main body 1 and each of the motor winding wires 23, 24, and 25, and copper on the lower plate of the lower plate 111 to be described later. A capacitance S is also present between the foil layer 112 and the processing table 26.

另一方面,轉軸a中的轉子2與鑽頭3之間是導通。另外,殼體27本身有接地32。 On the other hand, the rotor 2 in the rotary shaft a is electrically connected to the drill 3. In addition, the housing 27 itself has a ground 32.

然而,由於下板111本身是絕緣物,因此相對於加工台26的表面是電絕緣,但下板111的上面側貼付有銅箔而形成下板上面銅箔層112,一般來說該下板上面銅箔層112的面積大,且下板111是薄的,因此下板111的下板上面銅箔層112與加工台26之間的靜電容量CP非常大,在高頻的下成為導通狀態。 However, since the lower plate 111 itself is an insulator, it is electrically insulated from the surface of the processing table 26, but the upper surface of the lower plate 111 is coated with a copper foil to form a lower plate upper copper foil layer 112, which is generally the lower plate. Since the area of the upper copper foil layer 112 is large and the lower plate 111 is thin, the electrostatic capacitance CP between the copper foil layer 112 on the lower plate of the lower plate 111 and the processing table 26 is very large, and is turned on at a high frequency. .

因此,本實施例中下板111本身雖然如後述是玻璃環氧樹脂製 的板體,乃是絕緣物,但下板111本身也可以是鋁板製。若是,則在鑽頭的下降距離資訊檢測時,轉軸a的鑽頭3前端若接觸屬於導體的檢測對象物,例如基板101的表面導體層107時,只有產生在變流器7的輸出捲線16側的電流増加,檢測器9檢測到電流變化之情況與下板111本身屬於絕緣物之場合沒有變化。 Therefore, in the present embodiment, the lower plate 111 itself is an insulator made of a glass epoxy resin as described later, but the lower plate 111 itself may be made of an aluminum plate. In the case of the drop distance information detection of the drill bit, when the tip end of the drill bit 3 of the rotary shaft a contacts the object to be detected, for example, the surface conductor layer 107 of the substrate 101, it is generated only on the output winding 16 side of the converter 7. When the current is increased, the detector 9 detects a change in current and the case where the lower plate 111 itself is an insulator does not change.

基板101內部構造詳細如圖2所示,是多層構造。但是,本實施例中為了簡略化說明,將內裝導體層及絕緣層顯示為2層及3層,實際上需要背鑽加工的基板有十層以上。而此基板101是由以下之層所構成:三層絕緣層103、104、105、表面及背面導體層107、108、夾在第一絕緣層103與第二絕緣層104之間的一部分的第一內層導體層102、及夾在第二絕緣層104與第三絕緣層105之間的一部分的第二內層導體層。導體層102、106、107、108皆是銅箔,其厚度是12~25μm。又,各絕緣層103、104、105是熱可塑性樹脂製,其各自的厚度是50~100μm。且設有從表面導體層107貫穿至背面導體層108的穿孔的孔部109,其內周面是經電鍍銅而成的電鍍部110。而第一內層導體層102即是理想的內層導體層,且對孔部109進行背鑽加工,到達第一內層導體層102的極近處為止。該背鑽加工也就是以其徑比穿孔的孔部109大徑一些的鑽頭,切削設於該穿孔的孔部109中表面導體層107側到第一內層導體層102的極近處為止之電鍍部110之電鍍銅部分,其目的是要正確且精密 地控制加工深度。 The internal structure of the substrate 101 is as shown in detail in FIG. 2 and is a multilayer structure. However, in the present embodiment, for the sake of simplicity, the built-in conductor layer and the insulating layer are shown as two layers and three layers, and in fact, the substrate to be back-drilled has ten or more layers. The substrate 101 is composed of a layer of three insulating layers 103, 104, 105, surface and back conductor layers 107, 108, and a portion sandwiched between the first insulating layer 103 and the second insulating layer 104. An inner conductor layer 102 and a second inner conductor layer sandwiched between the second insulating layer 104 and the third insulating layer 105. The conductor layers 102, 106, 107, and 108 are all copper foils having a thickness of 12 to 25 μm. Further, each of the insulating layers 103, 104, and 105 is made of a thermoplastic resin, and each has a thickness of 50 to 100 μm. Further, a hole portion 109 through which the surface conductor layer 107 penetrates to the back surface conductor layer 108 is provided, and the inner peripheral surface thereof is a plated portion 110 which is plated with copper. The first inner conductor layer 102 is an ideal inner conductor layer, and the hole portion 109 is back-drilled to reach the very close vicinity of the first inner conductor layer 102. The back drilling process is a drill having a diameter larger than that of the hole portion 109 which is perforated, and is cut in the hole portion 109 of the hole to be in the vicinity of the surface of the surface conductor layer 107 to the first inner conductor layer 102. The copper plating portion of the plating portion 110 is intended to accurately and precisely control the processing depth.

另外,在背鑽加工時,在加工台26上載置並固定下板111後,再於其上進行前述基板101的載置‧固定。該下板111是厚度為1500μm的玻璃環氧樹脂製的板,其上面設有下板上面銅箔層112。又,也可以在下板111的上面及下面設置銅箔層,或是下板111本身以鋁板來製成,但至少下板111的上面必須要是導體層。 Further, in the back drilling process, after the lower plate 111 is placed and fixed on the processing table 26, the substrate 101 is placed and fixed thereon. The lower plate 111 is a glass epoxy resin plate having a thickness of 1500 μm, and a lower plate upper copper foil layer 112 is provided on the upper plate. Further, a copper foil layer may be provided on the upper surface and the lower surface of the lower plate 111, or the lower plate 111 itself may be formed of an aluminum plate, but at least the upper surface of the lower plate 111 must be a conductor layer.

另一方面,4為檢測裝置,由高頻發振器6、變流器7、檢波電路8及檢測器9、以及旁通電路5與消除電路10所構成,高頻發振器6是以0.3W進行略0.5~2MHz的高頻交流發振較適當,但在此是以1MHz的高頻率發振。其所輸出的高頻交流電是經由GND線11連接殼體27,另一方面的輸出線12是連接在變流器7的輸入捲線13與消除捲線14的中間。變流器7是前述兩捲線13、14從指示為m之側開始往右捲繞同樣次數,輸入捲線13之捲繞結束後在連接消除捲線14的開始捲繞處。 On the other hand, 4 is a detecting device composed of a high frequency oscillator 6, a converter 7, a detecting circuit 8 and a detector 9, and a bypass circuit 5 and a cancel circuit 10. The high frequency oscillator 6 is slightly 0.3W. The high frequency AC excitation of 0.5~2MHz is more suitable, but here it is excited at a high frequency of 1MHz. The high-frequency alternating current that is output is connected to the casing 27 via the GND line 11, and the output line 12 on the other hand is connected between the input winding 13 of the converter 7 and the eliminating winding 14. The current transformer 7 is the same number of times the two winding wires 13 and 14 are wound rightward from the side indicated by m, and the winding of the input winding wire 13 is completed at the start winding of the connection eliminating winding 14.

而夾著鐵心15設置的輸出捲線16的兩端連接由四個二極體所構成的檢波電路8,而該檢波電路8連接檢測器9。 Further, both ends of the output winding 16 provided with the core 15 are connected to a detector circuit 8 composed of four diodes, and the detector circuit 8 is connected to the detector 9.

另一方面,旁通電路5構成為與反應器L與阻抗R並聯,其電路5的一端連接在輸入捲線13的開始捲繞處與轉軸本體1的中間,而另一端連接殼體27。旁通電路5是設定為相對於來自使用於檢測下降距離資訊的高頻發振器6的高頻電流,具有高阻抗,且 相對於對連接商用電源V以驅動轉軸a的反相器28施加的諧波電流,具有低阻抗,因此反應器L的電感是設定於50~100μH的範圍內。若反應器L的電感小於50μH則高頻電流會流到用於檢測的旁通電路5,使鑽頭3與理想的導體層之接觸難以正確地檢測,相反地,如果超過100μH則來自反相器28的諧波電流等也難以通過,使相對於轉軸a的接地效果降低而難以維持安全性。本實施例中,反應器L的電感是設定為在75μH時阻抗成分略為0Ω,而阻抗R的阻抗值是設定為200Ω,電感成分略為0μH。 On the other hand, the bypass circuit 5 is configured to be in parallel with the reactor L and the impedance R, and one end of the circuit 5 The connection is at the beginning of the input winding 13 and the middle of the spindle body 1, and the other end is connected to the housing 27. The bypass circuit 5 is set to have a high impedance with respect to a high-frequency current from the high-frequency oscillator 6 for detecting the falling distance information, and is applied with respect to the inverter 28 that drives the commercial power source V to drive the rotating shaft a. The wave current has a low impedance, so the inductance of the reactor L is set in the range of 50 to 100 μH. If the inductance of the reactor L is less than 50 μH, the high-frequency current will flow to the bypass circuit 5 for detection, so that the contact of the drill bit 3 with the ideal conductor layer is difficult to detect correctly, and conversely, if it exceeds 100 μH, it comes from the inverter. The harmonic current of 28 or the like is also difficult to pass, and the grounding effect with respect to the rotating shaft a is lowered, so that it is difficult to maintain safety. In the present embodiment, the inductance of the reactor L is set such that the impedance component is slightly 0 Ω at 75 μH, and the impedance value of the impedance R is set to 200 Ω, and the inductance component is slightly 0 μH.

又,消除電路10是由四個模擬電路17-1、17-2、17-3、17-4及一個逆旁通電路18所構成。各模擬電路17-1、17-2、17-3、17-4各別是有八個電容器20與八個雙行組件開關21分別串聯配置,以其串聯配置的電容器20與雙行組件開關21構成一組,而並聯配置有八組。此等電容器20各自之容量相異,在此是使用容量分別是10pF、20pF、40pF、80pF、160pF、320pF、640pF及1280pF之電容器(又,圖1中省略各模擬電路的電容器20及雙行組件開關21,只各自顯示兩組)。而17-1之模擬電路的一端連接變流器7的消除捲線14之結束捲繞處,另一端連接殼體27。又,17-2~17-4之各模擬電路各自的一端分別連接內藏於轉軸本體1的三相馬達22之U相、V相及W相,另一端連接變流器7的消除捲線14的結束捲繞處。而且是設置為可使用雙行組件開關21將 17-1之模擬電路的靜電容量設定為略同於轉軸本體1與殼體27之間的靜電容量CS、將17-2~17-4之各模擬電路的靜電容量分別設定為略同於內藏於轉軸本體1的三相馬達22之各捲線23、25、24與轉軸本體1之間的靜電容量CU、CW、CV。而在事前將檢測對象物固定於基板加工裝置A的加工台26上,分別測定轉軸本體1與殼體27間的靜電容量CS、及內藏於轉軸本體1的三相馬達22之各相的捲線23、24、25與轉軸本體1之間的靜電容量CU、CV、CW後,使各模擬電路17-1、17-2、17-3、17-4之各八個雙行組件開關21成為適當的通電狀態,以使其各自成為略相同的靜電容量。又,前述各靜電容量CS、CU、CV、CW大約是200~500pF。而由於本實施例中轉軸本體1與轉子2之間是使用陶瓷軸承,因此其間的靜電容量CR略為200pF,下板111的下板上面銅箔層112與加工台之間的靜電容量CP雖然是受基板101的大小左右,但大概是500~1000pF,因此在本實施例中是使用令其成為1000pF的大小。 Further, the cancel circuit 10 is composed of four analog circuits 17-1, 17-2, 17-3, and 17-4 and an inverse bypass circuit 18. Each of the analog circuits 17-1, 17-2, 17-3, and 17-4 has eight capacitors 20 and eight double-row component switches 21 respectively arranged in series, and the capacitor 20 and the two-row component switch are arranged in series. 21 constitutes one group, and eight groups are arranged in parallel. These capacitors 20 have different capacities, and here are capacitors having capacities of 10 pF, 20 pF, 40 pF, 80 pF, 160 pF, 320 pF, 640 pF, and 1280 pF, respectively (again, the capacitor 20 and the double row of each analog circuit are omitted in FIG. The component switches 21 only display two groups each). One end of the analog circuit of 17-1 is connected to the end winding of the eliminating winding 14 of the current transformer 7, and the other end is connected to the casing 27. Further, one end of each of the analog circuits of 17-2 to 17-4 is connected to the U-phase, the V-phase, and the W-phase of the three-phase motor 22 housed in the spindle body 1, and the other end is connected to the elimination winding 14 of the converter 7. The end of the winding. Moreover, it is provided that the electrostatic capacitance of the analog circuit of 17-1 can be set to be slightly the same as the electrostatic capacitance CS between the rotating shaft main body 1 and the casing 27 by using the two-row component switch 21, and each of 17-2 to 17-4 The electrostatic capacitances of the analog circuits are set to be slightly the same as the electrostatic capacities CU, CW, and CV between the respective winding wires 23, 25, 24 of the three-phase motor 22 housed in the spindle body 1 and the spindle body 1. On the other hand, the object to be inspected is fixed to the processing table 26 of the substrate processing apparatus A, and the electrostatic capacitance CS between the rotating shaft main body 1 and the casing 27 and the phases of the three-phase motor 22 housed in the rotating shaft main body 1 are measured. After the capacitances CU, CV, and CW between the winding wires 23, 24, and 25 and the spindle body 1, eight eight-row component switches 21 of each of the analog circuits 17-1, 17-2, 17-3, and 17-4 are caused. Become in an appropriate energized state so that each has a slightly the same electrostatic capacitance. Further, each of the electrostatic capacitances CS, CU, CV, and CW is approximately 200 to 500 pF. However, since the ceramic bearing is used between the rotating shaft main body 1 and the rotor 2 in this embodiment, the electrostatic capacitance CR therebetween is slightly 200 pF, and the electrostatic capacitance CP between the copper foil layer 112 on the lower plate of the lower plate 111 and the processing table is It is about 500 to 1000 pF depending on the size of the substrate 101. Therefore, in the present embodiment, it is used to have a size of 1000 pF.

另一方面,逆旁通電路18是將與旁通電路5同一的反應器L'與阻抗R'同樣地並聯而成,其電路18的一端連接變流器7的消除捲線14的結束捲繞處,另一端連接殼體27。 On the other hand, the reverse bypass circuit 18 is formed by connecting the reactor L ' identical to the bypass circuit 5 in the same manner as the impedance R ' , and the end of the circuit 18 is connected to the end winding of the canceling winding 14 of the current transformer 7. At the other end, the housing 27 is connected.

本構成中,由於非檢測中的鑽頭3不與基板101之表面導體層107或是下板111之下板上面銅箔層112接觸,即使對轉軸的馬達捲線23、24、25施加來自反相器28的前述諧波電壓,其電流也 會經由旁通電路5流入殼體27,因此轉軸本體1相當於接地,故不需設置對應觸電的安全對策。因此,在進行下降距離資訊的檢測時,即使鑽頭3接觸基板101的表面導體層107或下板111的下板上面銅箔層112,也不會有諧波電流流到鑽頭3而損傷鑽頭3表面的覆膜等,故不會損害鑽頭3的壽命。 In the present configuration, since the non-detecting drill 3 is not in contact with the surface conductor layer 107 of the substrate 101 or the lower copper foil layer 112 of the lower plate 111, even if the motor winding wires 23, 24, 25 of the rotating shaft are applied from the opposite phase. The harmonic voltage of the device 28 also flows into the casing 27 via the bypass circuit 5. Therefore, the spindle main body 1 corresponds to the ground, and it is not necessary to provide safety measures corresponding to electric shock. Therefore, when the detection of the falling distance information is performed, even if the drill 3 contacts the surface conductor layer 107 of the substrate 101 or the lower copper foil layer 112 of the lower plate 111, no harmonic current flows to the drill bit 3 to damage the drill bit 3. The surface of the film or the like does not impair the life of the drill 3.

又,關於下降距離資訊的檢測精度,是具有如下的高正確性。也就是在非檢測中來自檢測裝置4的高頻發振器6的高頻電壓之電流流入變流器7的輸入捲線13,同時電流經由各靜電容量CS、CU、CV、CW以及旁通電路5的反應器L流入前述輸入捲線13,由於事前操作各開關21使消除電路10的各模擬基板17-1、17-2、17-3、17-4發生的靜電容量分別略等於各靜電容量CS、CU、CV、CW,因此各模擬基板17-1、17-2、17-3、17-4發生與各靜電容量略相等的靜電容量,而且設有逆旁通電路18而該逆旁通電路18設有與旁通電路5之反應器L相同的反應器L',因此會有與流入前述輸入捲線13之電流略相同的電流經由該等各模擬基板17-1、17-2、17-3、17-4以及逆旁通電路18的反應器L',流入消除捲線14。因此,分別發生於輸入捲線13與消除捲線14的磁束會相互抵消,使變流器的鐵心15不被激磁,輸出捲線16沒有輸出電流流動,故檢測器9不會誤檢測到電流變化。 Further, the detection accuracy of the falling distance information has the following high accuracy. That is, in the non-detection, the current of the high-frequency voltage from the high-frequency oscillator 6 of the detecting device 4 flows into the input winding 13 of the converter 7, while the current flows through the respective electrostatic capacities CS, CU, CV, CW and the bypass circuit 5. The reactor L flows into the input winding wire 13, and the electrostatic capacitance generated by each of the analog substrates 17-1, 17-2, 17-3, and 17-4 of the eliminating circuit 10 is slightly equal to each electrostatic capacitance CS, respectively, by operating the switches 21 in advance. CU, CV, CW, therefore, each of the analog substrates 17-1, 17-2, 17-3, and 17-4 has an electrostatic capacitance slightly equal to each electrostatic capacitance, and is provided with a reverse bypass circuit 18 and the reverse bypass circuit 18 is provided with the same reactor L ' as the reactor L of the bypass circuit 5, so that a current slightly the same as the current flowing into the input winding 13 passes through the respective analog substrates 17-1, 17-2, 17- 3, 17-4 and the reactor L ' of the reverse bypass circuit 18 flow into the elimination winding 14. Therefore, the magnetic fluxes respectively occurring in the input winding 13 and the eliminating winding 14 cancel each other, so that the core 15 of the converter is not excited, and the output winding 16 has no output current flowing, so that the detector 9 does not erroneously detect the current change.

另一方面,在下降距離資訊之檢測開始時,以Z軸驅動裝置31 將轉軸a往下推,例如當該鑽頭3接觸基板101的表面導體層107時,會經由發生於轉軸本體1與轉子2之間,以檢測裝置4之高頻發振器6為的靜電容量CR,及發生於從基板101的表面導體層107經由穿孔的孔部109的電鍍部110導通的下板111的下板上面銅箔層112與加工台26之間的靜電容量CP,使略1MHz的高頻電流流入鑽頭3,但由於該電流只會流經輸入捲線13而不流經消除捲線14,因此變流器7的鐵心15會受該新的電流所激磁,使輸出捲線16側產生輸出電流,因此該電流的變化會經由四個二極體所構成的檢波電路8被檢測器9檢測到,而判斷轉軸a的鑽頭3接觸到基板101的理想的導體層也就是表面導體層107。另外,當然地在檢測下降距離資訊時,即使鑽頭3接觸基板101的表面導體層107,也不會有諧波電流流到鑽頭3而損傷鑽頭3表面的覆膜等,故不會損害鑽頭3的壽命。 On the other hand, when the detection of the falling distance information is started, the Z-axis driving device 31 pushes down the rotating shaft a, for example, when the drill bit 3 contacts the surface conductor layer 107 of the substrate 101, it occurs via the rotating shaft body 1 and the rotor. Between the two, the electrostatic capacitance CR of the high-frequency oscillator 6 of the detecting device 4, and the upper surface of the lower plate 111 of the lower plate 111 which is formed by the plating portion 110 of the hole portion 109 of the substrate 101 from the surface conductor layer 107. The electrostatic capacitance CP between the foil layer 112 and the processing table 26 causes a high frequency current of slightly 1 MHz to flow into the drill bit 3, but since the current only flows through the input winding 13 without flowing through the elimination winding 14, the converter 7 The core 15 is excited by the new current to cause an output current to be generated on the output winding 16 side. Therefore, the change of the current is detected by the detector 9 via the detector circuit 8 composed of four diodes, and the rotation axis a is judged. The desired conductor layer of the drill bit 3 that contacts the substrate 101 is the surface conductor layer 107. Further, of course, when detecting the falling distance information, even if the drill 3 contacts the surface conductor layer 107 of the substrate 101, harmonic current does not flow to the drill 3 and damages the coating on the surface of the drill 3, so that the drill 3 is not damaged. Life expectancy.

在檢測載置固定於加工台26上的下板111上所載置固定的基板101的高度位置之場合,與藉由檢測鑽頭3接觸下板111的下板上面銅箔層112以檢測其高度位置之場合,由於其檢測的對象物不同,故其可正確檢測的機制與上述相同。 In the case where the height position of the fixed substrate 101 placed on the lower plate 111 fixed to the processing table 26 is detected, the upper surface of the lower plate 111 is contacted with the lower surface of the lower plate 111 by the detecting bit 3 to detect the height thereof. In the case of position, since the object to be detected is different, the mechanism for correct detection is the same as described above.

如此,藉由設置消除電路10,令與經由產生於三相馬達22之各相的捲線23、24、25與轉軸本體1之間的靜電容量CU、CV、CW以及產生於轉軸本體1與殼體27之間的靜電容量CS而流入變流器7的輸入捲線1之電流略同量的電流,藉由各模擬電路17-1、17 -2、17-3、17-4之設置流入消除捲線14,而且,關於經由為防止諧波電流流入轉軸a鑽頭3而設置的旁通電路5之反應器L而流入輸入捲線13的電流,也藉由使略同量的電流經由逆旁通電路18流入消除捲線14,使發生於輸入捲線13與消除捲線14所具有之變流器7的磁束的方向相互抵消,使變流器7的鐵心15不被激磁,故不會有輸出電流流經輸出捲線16。如此,藉由抵消流入變流器7的輸入捲線13的電流所產生的磁束,而可消除在下降距離資訊之檢測前,對於變流器7的輸出捲線16側發生的外在不良要因。藉此,轉軸a的鑽頭3與理想的導體物有無接觸,不是以電流的變化,而可以轉子2與轉軸本體1之間的靜電容量CR及下板111之下板上面銅箔層112與加工台26之間的靜電容量CP之串聯電路有無電流通過之「1」或「0」之訊號來進行檢測,故判定較容易。 Thus, by providing the eliminating circuit 10, the electrostatic capacitances CU, CV, CW between the winding wires 23, 24, 25 and the rotating shaft body 1 generated through the respective phases of the three-phase motor 22 are generated in the rotating shaft body 1 and the casing. The current flowing into the input winding 1 of the converter 7 with the electrostatic capacitance CS between the bodies 27 is slightly the same amount of current, and is eliminated by the setting of each of the analog circuits 17-1, 17-2, 17-3, and 17-4. The winding wire 14 and the current flowing into the input winding wire 13 via the reactor L of the bypass circuit 5 provided to prevent the harmonic current from flowing into the rotating shaft a drill 3 are also passed through the reverse bypass circuit by a similar amount of current. 18 flows into the elimination winding 14 so that the directions of the magnetic fluxes occurring in the input winding 13 and the current transformer 7 of the eliminating winding 14 cancel each other, so that the core 15 of the converter 7 is not excited, so that no output current flows. Output winding 16 . Thus, by canceling the magnetic flux generated by the current flowing into the input winding 13 of the current transformer 7, the external disadvantage of the output winding 16 side of the current transformer 7 before the detection of the falling distance information can be eliminated. Thereby, the drill bit 3 of the rotating shaft a has no contact with the ideal conductor, not the current change, but the electrostatic capacitance CR between the rotor 2 and the rotating shaft body 1 and the copper foil layer 112 on the lower plate of the lower plate 111 and the processing. It is easier to determine whether or not the series circuit of the electrostatic capacitance CP between the stages 26 has a signal of "1" or "0" through which the current passes.

而且,該檢測出的下降距離資訊等在基板加工裝置A的CNC控制電路S中,是以如下的方式來記録或提取,且更進一步經由各計算步驟,而可正確且精密地控制背鑽加工的深度。 Further, the detected falling distance information and the like are recorded or extracted in the CNC control circuit S of the substrate processing apparatus A in the following manner, and the back drilling processing can be accurately and precisely controlled via the respective calculation steps. depth.

也就是,第一,由於基板101是以一定的設計上厚度來製造,故存在有其設計上的基板厚度L2d。又,在以第一內裝導體層102為理想的導體層,而形成為貫通面導體層107與背面導體層108之穿孔中,保留連結背面導體層108與第一內裝導體層102之電鍍部110,進行背鑽加工以削除其多餘的電鍍部110時,從表面導體層 107到達作為理想的導體層之第一內裝導體層102為止的長度稱為基準餘長L2d。而在製造基板101時,絕緣層與導體層之構成方式是預先決定的,因此只要先標定理想的導體層,此基準餘長Lnd就可以從基板101中的設計上數值取得出來(參見圖4)。 That is, first, since the substrate 101 is manufactured with a certain design thickness, there is a substrate thickness L2d of its design. Further, in the perforation of the through-plane conductor layer 107 and the back conductor layer 108, the first inner conductor layer 102 is preferably a conductor layer, and the plating of the back surface conductor layer 108 and the first inner conductor layer 102 is left. When the back drilling process is performed to remove the unnecessary plating portion 110, the length from the surface conductor layer 107 to the first built-in conductor layer 102 which is an ideal conductor layer is referred to as a reference residual length L2d. When the substrate 101 is manufactured, the formation of the insulating layer and the conductor layer is predetermined. Therefore, the reference residual length Lnd can be obtained from the design value in the substrate 101 as long as the ideal conductor layer is first calibrated (see FIG. 4). ).

雖然是以背鑽加工來削除電鍍部110,但此時電鍍部110之預留誤差範圍110-1之長度為零時,為理論上的最佳狀況。 Although the plating portion 110 is cut by the back drilling process, when the length of the reserved error range 110-1 of the plating portion 110 is zero, it is the theoretical optimum.

另一方面如前文所述,保留連結背面導體層108與理想的導體層也就是第一內裝導體層102之電鍍部110,而進行背鑽加工削除其多餘的電鍍部110時,無論如何都一定會發生加工誤差,因此決定預定的尺寸td作為在預先在設計上的預留誤差範圍(參見圖4)。 On the other hand, as described above, the back surface conductor layer 108 and the ideal conductor layer, that is, the plating portion 110 of the first inner conductor layer 102 are left, and when the back plating process is performed to remove the unnecessary plating portion 110, anyway The machining error must occur, so the predetermined size td is determined as the predetermined error range in the design (see Fig. 4).

此等基準餘長L2d及設計上的殘留量之長度td之數值,記録於CNC控制電路S的記錄媒體S1。 The values of the reference remaining length L2d and the length td of the design residual amount are recorded in the recording medium S1 of the CNC control circuit S.

另外,設於穿孔的孔部109之電鍍部110之層的預定厚度q,及鑽頭3的前端角之角度θ之數值也記録於CNC控制電路S的記錄媒體S1。 Further, the predetermined thickness q of the layer of the plated portion 110 of the perforated hole portion 109 and the value of the angle θ of the tip end angle of the drill 3 are also recorded on the recording medium S1 of the CNC control circuit S.

第二,由於對基板101實施背鑽加工時使用之下板111為四角形,在將其載置固定於加工台26的狀態下,以縱橫四等分的方式劃下假想線將其分割出合計十六個區域201後,再對各區域以縱橫二等分的方式劃下假想線將其分割出合計四個子區域202(參見圖3)。而以此子區域202個別的對角線的交點,也就是各子區域202 的中心為下板111的測定點203。也就是,在下板111設定六十四個測定點203。又,此測定點203是作為測定基板101之實際厚度,或是計算理想的導體層之實際的位置時之基礎數值的位置,而且,在作前述計算時關於下板111的測定值是使用平均值,因此需要依一定的規則性來決定而不可在下板111上有偏離。一般來說下板111是縱橫33.5cm×50cm的四角形,因此,區域201是其十六等分,子區域202又是其四等分,若採用平均值,已判定應該幾乎不會有誤差,但可以依該下板111的大小,考慮藉由適當調整區域201及子區域202的大小來增加其分割數。 Second, since the lower plate 111 is formed in a square shape when the backing processing is performed on the substrate 101, the imaginary line is divided into four equal parts in a state of being placed and fixed on the processing table 26, and the total is divided into a total of After the sixteen areas 201, the imaginary lines are divided into two equal divisions in the vertical and horizontal divisions to divide the total of four sub-areas 202 (see Fig. 3). The intersection of the individual diagonal lines of the sub-regions 202, that is, the center of each sub-region 202 is the measurement point 203 of the lower plate 111. That is, sixty-four measurement points 203 are set on the lower plate 111. Further, the measurement point 203 is a position which is the actual thickness of the measurement substrate 101 or a basic value when the actual position of the ideal conductor layer is calculated, and the measured value with respect to the lower plate 111 in the calculation described above is the average value. The value is therefore determined by a certain regularity and cannot be deviated on the lower plate 111. Generally, the lower plate 111 is a square shape of 33.5 cm × 50 cm in length and width. Therefore, the area 201 is its sixteenth division, and the sub-area 202 is also its four divisions. If the average value is used, it has been determined that there should be almost no error. However, depending on the size of the lower plate 111, it is considered to increase the number of divisions by appropriately adjusting the size of the area 201 and the sub-area 202.

另外,例如在一片基板101設一百個穿孔,而對該一百個穿孔分別實施背鑽加工時,在此使用各區域201個別的測定點203(本實施例中一個區域201中存在有四個測定點203)的平均值,但如果考慮正確性優先於經濟性,則如前述設置例中的敘述,在將基板101載置固定於加工台26上的下板111上時,應標定成為該背鑽加工位置之一百個孔部109各別在下板111所對應的位置,以該各位置作為測定點203。然而此方法是必須標定基板101之一百個孔部109各別在下板111上的對應位置,須要繁瑣的程序,而會造成時間與成本的增加。在此,求出個別區域201在下板111的高度位置之平均值,以求兼顧迅速性及經濟性與正確性。因此,應考量基板101或是從其切出基板之母板的大小、須進行背鑽加工之孔部110的數 量等,及及其所需的正確性等之關聯性,來妥善決定設在下板111之區域201及子區域202之數量。 Further, for example, when one hundred perforations are provided on one substrate 101 and back drilling is performed on the one hundred perforations, the individual measurement points 203 of the respective regions 201 are used here (four in one region 201 in the present embodiment) The average value of the measurement points 203) is determined. If the accuracy is prioritized over the economical efficiency, as described in the above-mentioned installation example, when the substrate 101 is placed and fixed on the lower plate 111 on the processing table 26, it should be calibrated. One hundred hole portions 109 of the back drilling processing position are respectively at positions corresponding to the lower plate 111, and the respective positions are used as the measurement points 203. However, in this method, it is necessary to calibrate the corresponding positions of one of the hundred hole portions 109 of the substrate 101 on the lower plate 111, which requires a cumbersome procedure, which causes an increase in time and cost. Here, the average value of the height position of the individual region 201 at the lower plate 111 is obtained, in order to achieve both rapidity, economy, and correctness. Therefore, it is necessary to consider the relationship between the size of the substrate 101, the size of the mother board from which the substrate is cut out, the number of the holes 110 to be back-drilled, and the correctness thereof, etc., so as to be appropriately determined. The number of regions 201 and sub-regions 202 of the board 111.

接著,決定下板111內的特定位置為原點(也就是縱橫XY座標中成為(0,0)之位置),對各區域201分別給予識別用的編號,再依座標決定各別區域201之範圍,同時也標定各測定點203之座標位置。如前述,本實施例中在一個區域201中設置四個子區域202,而要測定該各子區域202的中心之測定點203,因此一個區域201中存在有四個測定點203。例如,識別編號定為1號的區域201中存在有一號~四號測定點203,識別編號定為二號的區域201中存在有五號~八號測定點203。因此,對於前述各區域201分別將存在於其區域201內的測定點203分類記錄於CNC控制電路S的記錄媒體S1。 Next, it is determined that the specific position in the lower plate 111 is the origin (that is, the position in the vertical and horizontal XY coordinates is (0, 0)), and each of the regions 201 is given a number for identification, and the respective regions 201 are determined by coordinates. The range, and also the coordinate position of each measurement point 203 is also calibrated. As described above, in the present embodiment, four sub-regions 202 are provided in one region 201, and the measurement points 203 at the center of the sub-regions 202 are to be measured, so that there are four measurement points 203 in one region 201. For example, in the area 201 in which the identification number is set to No. 1, there are measurement points 203 of No. 1 to No. 4, and the measurement points 203 of No. 5 to No. 8 exist in the area 201 in which the identification number is set to No. 2. Therefore, the measurement points 203 existing in the area 201 are classified and recorded on the recording medium S1 of the CNC control circuit S for each of the above-described areas 201.

第三,在將下板111載置固定於加工台26的狀態下,使用前述基板加工裝置A的下降距離資訊檢測機構K,測定前述各測定點203的高度位置。下板111的上面是形成為下板上面銅箔層112,因此如果轉軸a的轉子2的鑽頭3之前端接觸該下板上面銅箔層112,檢測器9中會檢測到電流的變化而判斷有接觸。而且,測定出在該檢測到電流變化的時點之高度位置。此測定作業是在全部的測定點203都進行,而其各測定點203的測定結果,也就是高度位置資訊會自動地記錄於CNC控制電路S的記錄媒體S1。而在CNC 控制電路S內之算出機構S3中,計算出個別分類於前述各區域201中的測定點203的高度位置資訊的平均值αave,此平均值αave也記録於記錄媒體S1中成為該區域201的高度位置資訊。例如前述識別編號定為一號的區域201中存在有一號~四號測定點203,因此計算出該一號~四號測定點203的高度位置資訊之平均值αave,在記錄媒體S1中記錄為1號區域201的高度位置資訊。結果,由於本實施例中分割有十六個區域201,因此會存在有識別編號一號~十六號的區域201,而計算出其各自的平均值αave。又,此針對個別之區域201進行的測定點203之高度位置資訊之平均值αave之計算,也可以在後述計算背鑽加工深度L2c時進行計算。 Third, in a state where the lower plate 111 is placed and fixed to the processing table 26, the height position of each of the measurement points 203 is measured using the falling distance information detecting means K of the substrate processing apparatus A. The upper surface of the lower plate 111 is formed as a lower plate copper foil layer 112. Therefore, if the front end of the drill 3 of the rotor 2 of the rotating shaft a contacts the copper foil layer 112 on the lower plate, the change in current is detected in the detector 9. Have contact. Moreover, the height position at the time point when the current change is detected is measured. This measurement operation is performed at all the measurement points 203, and the measurement result of each measurement point 203, that is, the height position information is automatically recorded in the recording medium S1 of the CNC control circuit S. On the other hand, in the calculation means S3 in the CNC control circuit S, the average value αave of the height position information of the measurement points 203 individually classified in the respective regions 201 is calculated, and the average value αave is also recorded in the recording medium S1 as the area. 201 height position information. For example, in the area 201 in which the identification number is set to be No. 1, there are measurement points 203 of No. 1 to No. 4, and thus the average value αave of the height position information of the measurement points 203 of the No. 1 to No. 4 is calculated, and recorded in the recording medium S1 as Height position information of area 201 in area 1. As a result, since there are sixteen regions 201 divided in this embodiment, there are regions 201 having identification numbers No. 1 to No. 16, and their respective average values αave are calculated. Further, the calculation of the average value αave of the height position information of the measurement point 203 by the individual region 201 may be calculated when the back-drilling processing depth L2c is calculated as will be described later.

第四,將基板101之各孔部109的XY座標位置記録於CNC控制電路S的記錄媒體S1。例如,在設有一百個穿孔的孔部109之一片基板101中,對於該一百個孔部109,以基板101之特定的位置為原點(也就是縱橫XY座標中成為(0,0)之位置),標定該一百個孔部109之各別的座標位置。例如,第一孔部109-1的座標位置為(1,1),第二孔部109-2的座標位置為(1,2)的形式。接著對該一百個孔部109分別給予用於識別的編號,將其座標位置記録於CNC控制電路S的記錄媒體S1。 Fourth, the XY coordinate position of each hole portion 109 of the substrate 101 is recorded on the recording medium S1 of the CNC control circuit S. For example, in one of the sheet substrates 101 in which one hundred perforated holes 109 are provided, the specific position of the substrate 101 is taken as the origin for the one hundred holes 109 (that is, the vertical and horizontal XY coordinates become (0, 0). Position)), the respective coordinate positions of the one hundred hole portions 109 are calibrated. For example, the coordinate position of the first hole portion 109-1 is (1, 1), and the coordinate position of the second hole portion 109-2 is (1, 2). Next, a number for identification is given to each of the one hundred hole portions 109, and the coordinate position is recorded on the recording medium S1 of the CNC control circuit S.

第五,在載置固定於加工台26上的下板111上,更加載置固定進行背鑽()加工的基板101,於CNC控制電路S 內的提取機構S2中,比對該狀態下實施背鑽加工之各孔部109在XY座標上的位置與設於下板之各區域201的XY座標位置,提取各區域201中分別對應的孔部109。此時,如果下板111中作為原點的位置,與基板101中作為原點的位置,在於下板111上載置固定基板101時於鉛直方向上重疊,則只要比較該孔部109的座標位置與區域201的座標位置,就可以進行比對與提取,若其兩者的原點的位置有偏差,則需要計算其偏差量,修正其一方的座標數值,來比對對應關係並進行提取。例如,如果下板111的原點(0,0)的位置與基板101的原點(0,0)的位置在鉛直方向上重疊,且第一區域201是在以(0,0)、(4,0)、(4,4)、(0,4)區分出的正方形的範圍內時,如果基板101的第一孔部109-1的座標位置為(2,2),則很明顯該孔部109-1是存在於第一區域201內。但如果下板111的原點(0,0)的位置相對於基板101在X軸方向有10的偏差,也就是下板111的原點(0,0)的位置與基板101的(10,0)的位置在鉛直方向上重疊時,前述第一區域201以下板111之原點的位置為基準下之座標位置如果是(0,0)、(4,0)、(4,4)、(0,4),則其換算為在以基板101的原點的位置為基準下的座標位置就成為(10,0)、(14,0)、(14,4)、(10,4)。如此,由於前述第一孔部109-1的座標位置以基板101的原點的位置為基準時,其座標位置為(2,2),則第一孔部109-1就不存在於下板111的第一區域201內。如此,在下板111與基 板101之各原點的位置存在有偏差時,當然必需要有測定偏差並對應其偏差量修正座標數值的機能。 Fifthly, on the lower plate 111 placed on the processing table 26, it is further loaded and fixed for back drilling ( The processed substrate 101 is in the extraction mechanism S2 in the CNC control circuit S, and is located on the XY coordinate of each hole portion 109 subjected to back-drilling in this state, and the XY coordinates of each region 201 provided on the lower plate. At the position, the hole portions 109 corresponding to the respective regions 201 are extracted. At this time, if the position of the lower plate 111 as the origin is the position which is the origin of the substrate 101 and overlaps in the vertical direction when the lower substrate 111 is placed on the fixed substrate 101, the coordinate position of the hole 109 is compared. The coordinate position of the region 201 can be compared and extracted. If the positions of the origins of the two are different, the amount of deviation needs to be calculated, and the coordinate value of one of the coordinates is corrected, and the correspondence is compared and extracted. For example, if the position of the origin (0, 0) of the lower plate 111 overlaps with the position of the origin (0, 0) of the substrate 101 in the vertical direction, and the first region 201 is at (0, 0), ( When the coordinates of the squares of 4,0), (4,4), (0,4) are different, if the coordinate position of the first hole portion 109-1 of the substrate 101 is (2, 2), it is obvious that The hole portion 109-1 is present in the first region 201. However, if the position of the origin (0, 0) of the lower plate 111 is shifted by 10 in the X-axis direction with respect to the substrate 101, that is, the position of the origin (0, 0) of the lower plate 111 and the position of the substrate 101 (10, When the position of 0) overlaps in the vertical direction, the position of the origin of the plate 111 below the first region 201 is the (0, 0), (4, 0), (4, 4), (0, 4), the coordinates are converted to (10, 0), (14, 0), (14, 4), (10, 4) based on the position of the origin of the substrate 101. . As described above, since the coordinate position of the first hole portion 109-1 is based on the position of the origin of the substrate 101, and the coordinate position is (2, 2), the first hole portion 109-1 is not present on the lower plate. Within the first region 201 of 111. As described above, when there is a difference in the positions of the origins of the lower plate 111 and the substrate 101, it is of course necessary to have a measurement deviation and correct the coordinate value in accordance with the amount of deviation.

第六,使用前述基板加工裝置A的下降距離資訊檢測機構K來測定載置固定於加工台26上的下板111上更加載置固定的基板101之各孔部109的高度位置。 Sixth, the height position of each hole portion 109 of the substrate 101 to be mounted and fixed on the lower plate 111 fixed to the processing table 26 is measured using the falling distance information detecting means K of the substrate processing apparatus A.

各孔部109是從基板101的表面側到背面側為止,包含其內周面都成為電鍍部110,且在表面側的電鍍部110的周圍存在有表面導體層107,因此如果轉軸a的轉子2的鑽頭3前端接觸到該電鍍部110及表面導體層107,在檢測器9就會檢測到電流的變化而判定為有接觸。而在檢測到此電流變化的時點,測定高度位置。此測定作業是在全部的孔部109進行,且隨著該各孔部109,將各孔部109個別的測定結果,也就是高度位置資訊自動地記録於CNC控制電路S的記錄媒體S1。 Each of the hole portions 109 is formed from the front surface side to the back surface side of the substrate 101, and the inner peripheral surface thereof is the plating portion 110, and the surface conductor layer 107 is present around the plating portion 110 on the front surface side. Therefore, if the rotor of the rotating shaft a is present, The tip end of the drill bit 3 of 2 contacts the plating portion 110 and the surface conductor layer 107, and the detector 9 detects a change in current and determines that there is contact. When the current change is detected, the height position is measured. This measurement operation is performed in all the hole portions 109, and the measurement results of the individual hole portions 109, that is, the height position information, are automatically recorded in the recording medium S1 of the CNC control circuit S with the respective hole portions 109.

第七,根據前述第五中記載的下板111之各區域201,及與基板101的孔部109間的對應關係,在CNC控制電路S的算出機構S3中,從前述第六中所測定到的各孔部109之高度,扣除在前述第三中所算出的與該孔部109相對應的下板111的區域201的平均高度αave,再將此扣除後的數值作為該孔部109在基板101的實際厚度,自動地記録於CNC控制電路S的記錄媒體S1。例如前述一般,在下板111的原點(0,0)的位置與基板101的原點(0,0)的位置 在鉛直方向上重疊,且第一區域201是在以(0,0)、(4,0)、(4,4)、(0,4)區分出的正方形的範圍內時,如果基板101的第一孔部109-1的座標位置為(2,2),則該孔部109-1是存在於第一區域201內,因此從該第一孔部109-1測定之高度位置數值扣除第一區域201之高度的平均值αave,將此扣除後的數值作為該第一孔部109-1的位置之基板101的厚度,記録於CNC控制電路S的記錄媒體S1。且針對全部的孔部109都同樣進行此計算。又,此計算與前述第三中所述的區域201之高度位置資訊之平均值αave之計算同樣,也可以在後述計算背鑽加工深度L2c時進行計算。 Seventh, according to the correspondence between the respective regions 201 of the lower plate 111 and the hole portion 109 of the substrate 101, the calculation mechanism S3 of the CNC control circuit S is measured from the sixth The height of each hole portion 109 is subtracted from the average height αave of the region 201 of the lower plate 111 corresponding to the hole portion 109 calculated in the third embodiment, and the subtracted value is used as the hole portion 109 on the substrate. The actual thickness of 101 is automatically recorded on the recording medium S1 of the CNC control circuit S. For example, generally, the position of the origin (0, 0) of the lower plate 111 overlaps with the position of the origin (0, 0) of the substrate 101 in the vertical direction, and the first region 201 is at (0, 0), When the coordinates of the squares (4, 0), (4, 4), (0, 4) are different, if the coordinate position of the first hole portion 109-1 of the substrate 101 is (2, 2), the hole Since the portion 109-1 is present in the first region 201, the height position value measured from the first hole portion 109-1 is subtracted from the average value αave of the height of the first region 201, and the deducted value is taken as the first The thickness of the substrate 101 at the position of the hole portion 109-1 is recorded on the recording medium S1 of the CNC control circuit S. This calculation is also performed for all of the hole portions 109. Further, this calculation is the same as the calculation of the average value αave of the height position information of the region 201 described in the third embodiment, and may be calculated when the back-drilling processing depth L2c is calculated as will be described later.

依據此從各孔部109的位置之高度位置的數值扣除下板111之各區域201個別的高度位置的平均值之計算式,可以排除存在於加工台26本身的傾斜或撓曲,以及由於此存在於下板111本身之傾斜或撓曲等所造成而令下板之高度位置發生偏差的各種要因,因此可省略為解決加工台26之水平或撓曲而進行的維護或是精密的微調整程序,而不要求下板111本身厚度的精密性。特別是,加工台26之傾斜或撓曲,在基板101的加工範圍中通常是顯示為±50μm的誤差,而且載置於其上的下板111也存在有傾斜或撓曲以至於因下板111本身之製造所造成的誤差存在,因此,該加工台26本身所具有的誤差與下板111本身所具有的誤差累積之下,在以往的背鑽加工之深度控制中會成為發生大量誤差的要因。然而在本實施例中, 由於如前述一般藉由適用從各孔部109的位置之高度位置數值,扣除下板111之各區域201個別的高度位置之平均值之計算式,下板111及基板101(實際上是基板101之各孔部109)各自的高度位置之±5μm程度的誤差,也就是產生作為使用鑽頭3之下降距離資訊檢測機構K所造成的測定誤差雖然難以避免,但是可以將兩者之誤差包含在合計±10μm程度的誤差之範圍裡面。 According to the calculation formula of the average value of the height positions of the respective regions 201 of the lower plate 111 from the values of the height positions of the positions of the respective hole portions 109, the inclination or deflection existing in the processing table 26 itself can be eliminated, and There are various factors that cause the height position of the lower plate to be deviated due to the inclination or deflection of the lower plate 111 itself, so that maintenance or fine fine adjustment for solving the level or deflection of the processing table 26 can be omitted. The procedure does not require the precision of the thickness of the lower plate 111 itself. In particular, the inclination or deflection of the processing table 26 is generally shown to be an error of ±50 μm in the processing range of the substrate 101, and the lower plate 111 placed thereon is also inclined or deflected so that the lower plate is present. The error caused by the manufacture of the 111 itself exists. Therefore, the error of the processing table 26 itself and the error accumulated by the lower plate 111 itself may become a large amount of error in the depth control of the conventional back drilling process. The cause. However, in the present embodiment, since the calculation formula of the average value of the height positions of the respective regions 201 of the lower plate 111 is deducted by applying the height position value from the position of each hole portion 109 as described above, the lower plate 111 and the substrate The error of about ±5 μm of the respective height positions of 101 (actually, each hole portion 109 of the substrate 101), that is, the measurement error caused by the falling distance information detecting mechanism K using the drill 3 is difficult to avoid, but it may be The error between the two is included in the range of the error of a total of ±10 μm.

結果,不只可以縮小背鑽加工時加工深度控制的誤差,也不需要進行精密地修正加工台26之表面之傾斜或撓曲等之維護作業,或是微調整程序。 As a result, it is possible to not only reduce the error of the machining depth control during the back drilling process, but also to perform the maintenance work of precisely correcting the inclination or deflection of the surface of the machining table 26 or the fine adjustment procedure.

第八,在CNC控制電路S之算出機構S3中,對各孔部109個別地進行以下的計算,計算出個別的背鑽加工深度L2c。 Eighth, in the calculation mechanism S3 of the CNC control circuit S, the following calculation is performed individually for each hole portion 109, and the individual back-drilling depth L2c is calculated.

L2c=Lnd×(L2m-αave)/L2d-td+角tan1 L2c=Lnd×(L2m-αave)/L2d-td+corner tan1

Lnd=設計上的基準餘長 Lnd=Design base length

L2m-αave之數值是在前述第7步驟中計算並記録 The value of L2m-αave is calculated and recorded in the aforementioned seventh step.

L2d=設計上之基板101的厚度 L2d=the thickness of the substrate 101 on the design

td=設計上的預留誤差範圍的長度 Td=the length of the design's reserved error range

角tan1=設於穿孔的孔部109之電鍍部110之層的厚度q×tan{(180度-鑽頭3的前端角的角度θ)÷2} The angle tan1 = the thickness of the layer of the plated portion 110 provided in the perforated hole portion 109, q × tan {(180 degrees - the angle θ of the tip end angle of the drill bit 3) ÷ 2}

在此計算式中,藉由(L2m-αave)/L2d,記算出設計上的基板101之厚度,與實施背鑽加工之各孔部109的位置之實際之基板 101厚度之比例。另一方面,由於理想的導體層也就是第一內裝導體層102在基板101內之高度位置,是在設計時決定,因此從該基板101的表面到達該第一內裝導體層102為止的距離也當然是在設計時決定。此設計上的距離就是基準餘長Lnd。而且,已知基板101本身在設計上的厚度L2d與各孔部109中基板101的實際厚度L2m-αave之比例,理想的導體層也就是第一內裝導體層102之基板101內在設計上的高度位置也就是基準餘長Lnd,與從該孔部109在基板101之實際上的高度位置扣除第一內裝導體層102之實際上的高度位置後,從基板101的表面到達第一內裝導體層102為止的實際之距離的比例,此兩個比例具有相等的關係。因此,對於基準餘長Lnd,乘以經前述(L2m-αave)/L2d之算式所計算出的,設計上的基板101厚度L2d與實施背鑽加工之各孔部109的位置中實際上基板101厚度之比例,來計算出理想的導體層也就是第一內裝導體層102在基板101內之實際的高度位置,也就是餘長部的實際上的長度。 In this calculation formula, the ratio of the thickness of the designed substrate 101 to the actual thickness of the substrate 101 at the position of each hole portion 109 for back-drilling is calculated by (L2m - αave) / L2d. On the other hand, since the ideal conductor layer, that is, the height position of the first built-in conductor layer 102 in the substrate 101, is determined at the time of design, the surface of the substrate 101 reaches the first built-in conductor layer 102. The distance is of course determined at the time of design. The distance on this design is the reference residual length Lnd. Moreover, the ratio of the thickness L2d of the substrate 101 itself to the actual thickness L2m-αave of the substrate 101 in each of the holes 109 is known, and the ideal conductor layer is also designed in the substrate 101 of the first built-in conductor layer 102. The height position, that is, the reference remaining length Lnd, is obtained from the surface of the substrate 101 to the first interior after subtracting the actual height position of the first built-in conductor layer 102 from the hole portion 109 at the actual height position of the substrate 101. The ratio of the actual distances up to the conductor layer 102 has an equal relationship between the two ratios. Therefore, the reference substrate length Lnd is multiplied by the above-described (L2m-αave)/L2d equation, and the designed substrate 101 thickness L2d and the position of each hole portion 109 subjected to the back-drilling process are actually the substrate 101. The ratio of the thicknesses is used to calculate the actual conductor layer, that is, the actual height position of the first inner conductor layer 102 in the substrate 101, that is, the actual length of the excess length portion.

如前述一般,αave是代表其各孔部109所存在的下板111之區域201個別的平均高度之數值,因此雖然不是完全的精密,但考慮兼顧經濟性或迅速性,比起針對各孔部109測定並計算在下板111上其所對應之位置的高度位置,可以說是更具有合理性,使用區域201之概念來計算出平均值,或者根本來說可算是測定精度的問 題,前述計算出的該孔部109中從基板101的表面到達理想的導體層為止的實際的距離也不可能完全不存在誤差。因此,雖然需要保留一定之預留誤差範圍作為安全係數,但如本實施例一般,該孔部109中從基板101的表面到達理想的導體層為止的客觀上的實際距離,與該計算出的距離之間,只要其誤差少,就可以考慮較低的安全係數,也就是將該殘留量之長度設定為較短。從這個意義上,將預先設定之殘留量稱為基準殘留量td,而將該基準殘留量td從此計算出的孔部109中從基板101的表面到達理想的導體層為止的實際距離扣除。 As described above, αave is a numerical value representing the average height of the region 201 of the lower plate 111 in which the respective hole portions 109 exist. Therefore, although it is not completely precise, it is considered to be economical or rapid, and it is compared with each hole portion. 109 Measure and calculate the height position of the corresponding position on the lower plate 111, which can be said to be more reasonable, use the concept of the area 201 to calculate the average value, or at all, can be regarded as the measurement accuracy problem, the foregoing calculation It is also impossible for the actual distance from the surface of the substrate 101 to the ideal conductor layer in the hole portion 109 to be completely free of errors. Therefore, although it is necessary to retain a certain margin of error as a safety factor, as in the present embodiment, the objective actual distance from the surface of the substrate 101 to the ideal conductor layer in the hole portion 109, and the calculated Between the distances, as long as the error is small, a lower safety factor can be considered, that is, the length of the residual amount is set to be shorter. In this sense, the predetermined residual amount is referred to as the reference residual amount td, and the reference residual amount td is subtracted from the calculated actual distance from the surface of the substrate 101 to the ideal conductor layer in the hole portion 109 thus calculated.

然而,進行背鑽加工之鑽頭3具有前端角θ,該前端形成有前端角頂部3-1。因此,為了在設置穿孔的位置測定基板101的高度位置,而令鑽頭3下降過來時,鑽頭3的前端角頂部3-1會行進到孔部109內,藉由延伸到基板101之表面側的電鍍部110之內側接觸傾斜部3-2,使鑽頭3之前端與基板101之接觸由下降距離資訊檢測機構K所測定出來。也就是,在該時點下,鑽頭3之前端角頂部3-1實際上是到達比基板101之高度位置更低的位置。而在進行背鑽加工時,因鑽頭3的前端行進至穿孔的孔部109以進行電鍍部110之切削,但鑽頭3中切削電鍍部110的是傾斜部3-2,而不是其前端角頂部3-1,因此,不只是鑽頭3之前端角頂部3-1的位置,與決定餘長部之預留誤差範圍110-1之長度的鑽頭3之傾斜部 3-2的位置之間會發生偏差,而且預留誤差範圍110-1之上端部,是被切削成為相對於孔部109傾斜而其外側較長、內側較短(參見圖5)。另一方面,設計上的預留誤差範圍的長度td,相對於預留誤差範圍110-1之孔部109,是決定在外側較長的前端部分,因此,成為該預留誤差範圍110-1之電鍍部110之內側與外側之高度上的偏差,可藉由計算出相對於電鍍部110厚度的角tan1來修正。也就是藉由以穿孔之電鍍部110之層的厚度×tan{(180度-鑽頭之前端角θ的角度)÷2}來計算出的數值,作計算上的修正,來正確且精密地背鑽加工的加工深度之控制。 However, the drill bit 3 subjected to the back drilling process has a front end angle θ which is formed with a front end corner top 3-1. Therefore, in order to measure the height position of the substrate 101 at the position where the perforation is provided and the drill 3 is lowered, the tip end angle 3-1 of the drill bit 3 advances into the hole portion 109 by extending to the surface side of the substrate 101. The inner side of the plated portion 110 contacts the inclined portion 3-2 so that the contact between the front end of the drill 3 and the substrate 101 is measured by the falling distance information detecting means K. That is, at this point in time, the front end top 3-1 of the drill bit 3 actually reaches a position lower than the height position of the substrate 101. On the other hand, in the back drilling process, the front end of the drill bit 3 travels to the perforated hole portion 109 to perform the cutting of the plating portion 110, but the cutting portion 3 of the drill 3 is the inclined portion 3-2 instead of the front end corner portion thereof. 3-1, therefore, not only the position of the top end 3-1 of the front end of the drill bit 3 but also the position of the inclined portion 3-2 of the drill bit 3 which determines the length of the reserved error range 110-1 of the excess length portion The deviation, and the upper end portion of the marginal error range 110-1, is cut to be inclined with respect to the hole portion 109, and the outer side is long and the inner side is short (see Fig. 5). On the other hand, the length td of the design reserved error range is determined to be the longer front end portion with respect to the hole portion 109 of the reserved error range 110-1, and therefore, the reserved error range is 110-1. The deviation between the inner side and the outer side of the plated portion 110 can be corrected by calculating the angle tan1 with respect to the thickness of the plated portion 110. That is, by calculating the value calculated by the thickness of the layer of the perforated plated portion 110 × tan {(180 degrees - the angle of the front end angle θ of the drill bit) ÷ 2}, the calculation is corrected to correctly and precisely back Control of the machining depth of the drilling process.

結果,以轉軸a之轉子2的鑽頭3不接觸基板101之一定點為高度方向的原點,來測定該孔部109中之基板101表面的高度位置,因此在檢測到鑽頭3之移度距離等同於到達基板101之表面為止的距離,與進行背鑽加工的加工深度L2c合計後的距離之時點,停止背鑽加工,就可以正確的深度進行背鑽加工。 As a result, the height position of the surface of the substrate 101 in the hole portion 109 is measured with the origin of the rotor 3 of the rotor 2 of the rotating shaft a not contacting the substrate 101 as the origin in the height direction, and thus the displacement distance of the drill bit 3 is detected. When the distance to the surface of the substrate 101 is equal to the distance after the machining depth L2c of the back drilling process is completed, the back drilling process is stopped, and the back drilling process can be performed at a correct depth.

如此,記録、提取、計算等各步驟是在CNC控制電路S中自動地進行,而可在短時間下正確且精密地持續控制對於各孔部109進行背鑽加工的加工深度。 In this way, each step of recording, extraction, calculation, and the like is automatically performed in the CNC control circuit S, and the machining depth for back drilling processing for each of the hole portions 109 can be continuously and accurately controlled in a short time.

又,前述之各步驟的順序只是一例,當然地邏輯上具有先後關係的步驟,例如第八步驟中的計算需要事先記錄或提取其計算中使用的各數值之意義上,其先後關係有限制,但相反地如第一步驟及 第二步驟一般,對於邏輯上沒有先後關係的步驟,並不受本實施例所記載之步驟先後關係所限制,而可以交換其先後關係。 Moreover, the order of the foregoing steps is only an example, and of course, the steps having a logical relationship, for example, the calculation in the eighth step needs to record or extract the values used in the calculation in advance, and the order relationship thereof is limited. Conversely, as in the first step and the second step, the steps that are not logically related to each other are not limited by the step relationship described in the embodiment, and the order relationship may be exchanged.

如以上所述,本實施例中的基板加工裝置A,其鑽頭3本身具有可檢測下降距離資訊的下降距離資訊檢測機構K,且具有包含記錄媒體S1、提取機構S2、及算出機構S3的CNC控制電路S,根據該鑽頭3所測定的下板111或基板101的高度位置資訊,依照前述算式計算出背鑽加工的加工深度。而且,更進一步,可藉由使用本實施例之背鑽加工方法,根據該計算出的加工深度正確且精密地控制轉軸a的鑽頭3之加工距離,來進行背鑽加工,因此可迅速且經濟地,而且配合實施背鑽加工的各孔部109在基板101之實際上的厚度及從基板101的表面到達其理想的導體層為止的實際距離,精密地進行背鑽加工。又,其結果,可將設計上的預留誤差範圍的長度td限於最低限度,而提供低成本且雜訊等不良狀況之發生較少的經加工基板101。 As described above, the substrate processing apparatus A of the present embodiment has the drill bit 3 itself having the falling distance information detecting mechanism K capable of detecting the falling distance information, and has the CNC including the recording medium S1, the extracting mechanism S2, and the calculating mechanism S3. The control circuit S calculates the machining depth of the back drilling process according to the above formula based on the height position information of the lower plate 111 or the substrate 101 measured by the drill 3. Furthermore, by using the back-drilling method of the present embodiment, the back-drilling process can be performed by correctly and precisely controlling the machining distance of the drill bit 3 of the rotary shaft a according to the calculated machining depth, thereby being quick and economical. Further, the hole portions 109 which are subjected to the back drilling process are precisely subjected to the back drilling process in the actual thickness of the substrate 101 and the actual distance from the surface of the substrate 101 to the ideal conductor layer. Further, as a result, the length td of the design reserved error range can be minimized, and the processed substrate 101 with low cost and less occurrence of noise such as noise can be provided.

因此,如第七步驟中所述,作為測定誤差之±10μm程度的誤差雖然難以避免,且區域201個別的偏差及基板101在加工中中的熱移位等也是產生誤差的要因,而即使考慮這些,在本實施例中也應可以將背鑽加工的加工深度之預留誤差範圍的長度維持在誤差±40μm程度的範圍內。因此,在以下的實驗用基板設置一百個穿孔,再依照本實施例所示的方法使用本實施例的基板加工裝置 A,對該等一百個穿孔的孔部進行背鑽加工。之後從該實驗體切除各孔部,在顯微鏡下測定實際上的預留誤差範圍的長度,與基準預留誤差範圍的長度作比較,發現其差異都在±25μm之內。 Therefore, as described in the seventh step, an error of about ±10 μm as the measurement error is difficult to avoid, and the individual deviation of the region 201 and the thermal displacement of the substrate 101 during processing are also causes of errors, and even considering In this embodiment, it is also possible to maintain the length of the correction error range of the machining depth of the back-drilling processing within the range of the error of ±40 μm. Therefore, one hundred perforations were provided in the following experimental substrate, and the substrate processing apparatus A of the present embodiment was used to perform back drilling processing on the one hundred perforated hole portions in accordance with the method shown in this embodiment. Thereafter, each of the hole portions was cut out from the test body, and the length of the actual reserved error range was measured under a microscope, and compared with the length of the reference reserved error range, the difference was found to be within ±25 μm.

實驗體及設定的內容 Experiment body and settings

縱橫:33.5cm×50cm Aspect: 33.5cm × 50cm

絕緣層:使用熱可塑性樹脂之玻璃環氧樹脂所製成的三層構造(從背面側開始的第一至第三絕緣層),分別之厚度為75μm導體層:使用銅箔,在實驗體表面及背面,以及第一絕緣層與第二絕緣層之間設置第一內裝導體層,第二絕緣層與第三絕緣層之間設置第二內裝導體層,且分別之厚度為20μm Insulating layer: a three-layer structure made of a glass epoxy resin of a thermoplastic resin (first to third insulating layers from the back side), respectively, a thickness of 75 μm of a conductor layer: using a copper foil on the surface of the test body And a back surface, and a first inner conductor layer is disposed between the first insulating layer and the second insulating layer, and a second inner conductor layer is disposed between the second insulating layer and the third insulating layer, and the thickness of each is 20 μm

Lnd:170μm Lnd: 170μm

L2d:265μm L2d: 265μm

td:50μm Td: 50μm

穿孔的電鍍部之層的厚度:40μm Thickness of the layer of the perforated plated portion: 40 μm

鑽頭的前端角角度:130度 Tip angle of the drill bit: 130 degrees

下板的內容 Lower board content

縱橫厚度:33.5cm×50cm×1.5mm Vertical and horizontal thickness: 33.5cm × 50cm × 1.5mm

素材:玻璃環氧樹脂 Material: Glass epoxy

下板上面銅箔層之厚度:20μm Thickness of copper foil layer on the lower plate: 20μm

實施例2 Example 2

圖6顯示進行背鑽加工中,於加工台26上夾著下板111載置‧固定基板101時,更於基板101上載置並固定厚度已知的鋁材上板301,更於其上載置固定電木(bakelite)製的電木上板302而成的狀態。 6 shows that, in the back drilling process, when the fixed substrate 101 is placed on the processing table 26 with the lower plate 111 interposed therebetween, the aluminum upper plate 301 having a known thickness is placed on the substrate 101 and mounted thereon. A state in which a bakelite bakelite plate 302 is fixed.

如此使用上板301、302時的實施例中,用於進行背鑽加工的加工深度的控制之測定及計算式於以下之點有差異。 In the embodiment in which the upper plates 301 and 302 are used as described above, the measurement and calculation formula of the control of the machining depth for performing the back drilling process differs in the following points.

也就是,第一,鋁材上板301雖然有導電性,但由於電木上板302具絕緣性,因此於加工台26上載置固定下板111,再於其上載置固定基板101後,更於其上載置固定有鋁材上板301及電木上板302之狀態下,使用鑽頭3以下降距離資訊檢測機構K檢測相當於基板101之各孔部109的XY座標的位置在該鋁材上板301之高度位置L2m1。也就是,實施例1中,不是檢測載置固定於下板111上之基板101的各孔部109的高度位置,而是使用下降距離資訊檢測機構K,根據該各孔部109的XY座標位置,檢測於基板101上載置固定有鋁材上板301之狀態下,測定相當於各孔部109之XY座標位置的高度位置。此時,由於電木上板302為非導電性,因此即便鑽頭3接觸到該電木上板302,下降距離資訊檢測機構K也不會檢測到其位置資訊,而在鑽頭3的前端角頂部3-1接觸到鋁材上板301時,下降距離資訊檢測機構K才會檢測到其位置資訊。而此高度位置就取代了實施例1中載置固定於加工台26上的下板111上的基板101 之各孔部109的高度位置,使用於計算式中。把握該鋁材上板301上的測定位置及與下板111之區域201間之對應關係,以及扣除具該對應關係之區域201在下板111的平均高度等,則與實施例1相同。 That is, first, although the aluminum upper plate 301 is electrically conductive, since the bakelite upper plate 302 is insulative, the lower plate 111 is placed on the processing table 26, and after the fixed substrate 101 is placed thereon, In the state in which the aluminum upper plate 301 and the bakelite upper plate 302 are fixed and placed thereon, the position of the XY coordinates corresponding to the respective hole portions 109 of the substrate 101 is detected by the lowering distance information detecting means K using the drill 3 in the aluminum material. The height position of the upper plate 301 is L2m1. That is, in the first embodiment, instead of detecting the height position of each hole portion 109 of the substrate 101 fixed on the lower plate 111, the falling distance information detecting mechanism K is used, and the XY coordinate position of each of the hole portions 109 is used. In the state where the aluminum plate upper plate 301 is placed and fixed on the substrate 101, the height position corresponding to the XY coordinate position of each hole portion 109 is measured. At this time, since the bakelite upper plate 302 is non-conductive, even if the drill bit 3 contacts the bakelite upper plate 302, the falling distance information detecting mechanism K does not detect its position information, but at the top end of the drill bit 3 When the 3-1 is in contact with the aluminum upper plate 301, the falling distance information detecting mechanism K detects the position information. On the other hand, this height position replaces the height position of each hole portion 109 of the substrate 101 on the lower plate 111 fixed to the processing table 26 in the first embodiment, and is used in the calculation formula. The correspondence between the measurement position on the aluminum upper plate 301 and the area 201 of the lower plate 111, and the average height of the lower portion 111 of the region 201 having the corresponding relationship are obtained, and the same as in the first embodiment.

第二,於本實施例中,由於不是測定基板101之各孔部109的高度位置,而是該鋁材上板301中相當於基板101之各孔部109的XY座標位置的高度位置L2m1,因此在計算基板101的厚度時,必須扣除鋁材上板301的厚度,而依L2m1-αave-tAL之計算式,可算出基板101的厚度。另外,tAL是鋁材上板301的厚度,如後述,此厚度是在設計時設定。 Secondly, in the present embodiment, since the height position of each hole portion 109 of the substrate 101 is not measured, the height position L2m1 of the XY coordinate position corresponding to each hole portion 109 of the substrate 101 in the aluminum upper plate 301 is Therefore, when calculating the thickness of the substrate 101, it is necessary to subtract the thickness of the aluminum upper plate 301, and the thickness of the substrate 101 can be calculated according to the calculation formula of L2m1-αave-tAL. Further, tAL is the thickness of the aluminum upper plate 301, which is set at the time of design as will be described later.

第三,關於從基板101之測定厚度與設計上之厚度之比例,根據存在於理想的導體層之設計上的基準餘長,計算出實際的餘長部之長度後,扣除設計上之預留誤差範圍的長度td,以計算出背鑽加工的加工深度L2c之方法中,在此除了鋁材上板301的厚度外,還必須加入由鑽頭3之前端角θ所產生的鑽頭3之前端角頂部3-1的位置,與鑽頭3的傾斜部3-2與設於孔部109之電鍍部110接觸之高度位置間之差異距離(以下將此距離稱為「角tan2」)。 Third, regarding the ratio of the measured thickness from the substrate 101 to the thickness of the design, the length of the actual excess length portion is calculated based on the reference residual length existing in the design of the ideal conductor layer, and the design reservation is deducted. The length td of the error range is used to calculate the machining depth L2c of the back drilling process. Here, in addition to the thickness of the aluminum upper plate 301, the front end angle of the drill bit 3 generated by the front end angle θ of the drill bit 3 must be added. The position of the top 3-1 is different from the height position between the inclined portion 3-2 of the drill 3 and the plating portion 110 provided in the hole portion 109 (hereinafter, this distance is referred to as "angle tan2").

也就是,若以開始背鑽加工前,從轉軸a之鑽頭3應成為原點之位置(代表高度之Z座標中成為零的位置)到鋁材上板301為止的下 降距離為P,則此距離P是在加工台26上載置固定下板111,再於其上載置‧固定基板101後,更於其上載置固定鋁材上板301之狀態下,於鑽頭3的前端角頂部3-1接觸到該鋁材上板301時由下降距離資訊檢測機構K所檢測出來。在此時點,鑽頭3的前端角頂部3-1是位在與實際上鋁材上板301的高度位置相同的高度位置。而在背鑽加工中雖然是以鑽頭3的前端在穿孔的孔部109行進以進行電鍍部110之切削,但鑽頭3中是傾斜部3-2在切削電鍍部110,而非其前端角頂部3-1,因此,不只鑽頭3之前端角頂部3-1的位置與畫出餘長部之預留誤差範圍110-1之鑽頭3的傾斜部3-2的位置間會發生偏差,預留誤差範圍110-1的上端部會被傾斜切削成為相對於孔部109之外側較長、內側較短。另一方面,設計上的預留誤差範圍的長度td,由於是由相對於孔部109之外側較長的預留誤差範圍110-1之前端部分所決定,因此,鑽頭3的前端角頂部3-1的位置,與成為預留誤差範圍110-1之電鍍部110的外側的高度間的偏差,可以藉由計算出相對於進行穿孔之加工時穿孔之半徑(加算孔部109的半徑與電鍍部110之厚度而成者)之角tan2來修正(參見圖7)。 That is, before the start of the back-drilling process, the distance from the position of the drill shaft 3 of the rotary shaft a to the position of the origin (the position at which the Z of the height is zero) to the aluminum upper plate 301 is P, The distance P is a fixed lower plate 111 placed on the processing table 26, and after the fixed substrate 101 is placed thereon, and the aluminum upper plate 301 is placed thereon, the top end of the drill 3 is 3-1. When the aluminum upper plate 301 is touched, it is detected by the falling distance information detecting mechanism K. At this point, the tip end angle 3-1 of the drill bit 3 is at the same height position as the height position of the aluminum upper plate 301. In the back drilling process, although the tip end of the drill bit 3 travels in the perforated hole portion 109 to perform the cutting of the plating portion 110, the drill portion 3 has the inclined portion 3-2 at the cutting plating portion 110 instead of the front end corner thereof. 3-1, therefore, not only the position of the front end 3-1 of the front end of the drill bit 3 but also the position of the inclined portion 3-2 of the drill bit 3 of the remaining error portion 110-1 of the remaining length portion may be deviated. The upper end portion of the error range 110-1 is obliquely cut to be longer with respect to the outer side of the hole portion 109 and shorter for the inner side. On the other hand, the length td of the design-predetermined error range is determined by the front end portion of the predetermined error range 110-1 with respect to the outer side of the hole portion 109, and therefore, the tip end angle 3 of the drill bit 3 The deviation between the position of -1 and the height of the outer side of the plating portion 110 which becomes the reserved error range 110-1 can be calculated by calculating the radius of the perforation with respect to the processing for performing the perforation (adding the radius of the hole portion 109 and plating The thickness of the portion 110 is increased by the angle tan2 (see Fig. 7).

換言之,如實施例1中所述,電鍍部110的預留誤差範圍110-1之上端部是傾斜切削成為相對於孔部109之外側較長、內側較短,因此,設計上的預留誤差範圍的長度td是藉由對孔部109位於 外側的前端位置來測定。如此一來,從根據測定值由Lnd×(L2m1-αave-tAL)/L2d之計算式所算出的實際的餘長部之長度,再扣除設計上之預留誤差範圍的長度td後的數值雖然代表電鍍部110受背鑽加工之距離,但由於鑽頭3的前端角頂部3-1接觸鋁材上板301,因此就不是顯示到背鑽加工結束的時點為止鑽頭3實際上必須移動的距離。為了計算出此實際上鑽頭3必須移動的距離,須要修正鑽頭3的前端角頂部3-1的位置,與鑽頭3之傾斜部3-2接觸電鍍部110的位置(如前述,預留誤差範圍110-1的長度是在相對於孔部109之外側的位置測定,也就是成為預留誤差範圍110-1之電鍍部110的外側的位置)間的偏差,必須加入由以下的計算式所導出的數值(此數值就是角tan2)。 In other words, as described in Embodiment 1, the upper end portion of the predetermined error range 110-1 of the plating portion 110 is inclined to be longer than the outer side of the hole portion 109, and the inner side is shorter, and therefore, the design error is reserved. The length td of the range is measured by the position of the front end of the hole portion 109 on the outer side. In this way, the value of the length of the actual residual length calculated from the calculation formula of Lnd×(L2m1−αave−tAL)/L2d based on the measured value is subtracted from the length td of the design reserved error range. The representative plating portion 110 is subjected to the back-drilling distance, but since the tip end angle top portion 3-1 of the drill bit 3 contacts the aluminum upper plate 301, it is not the distance at which the drill bit 3 actually has to move until the end of the back-drilling process. In order to calculate the distance that the drill bit 3 must actually move, it is necessary to correct the position of the tip end angle 3-1 of the drill bit 3, and the position of the plating portion 110 in contact with the inclined portion 3-2 of the drill bit 3 (as described above, the margin of error) The length of 110-1 is measured at a position on the outer side with respect to the hole portion 109, that is, the position outside the plated portion 110 which becomes the reserved error range 110-1, and must be added by the following calculation formula. The value of this value (this value is the angle tan2).

角tan2=β×tan{(180度-鑽頭前端角的角度θ)÷2} Angle tan2=β×tan{(180 degrees - angle θ of the tip angle of the drill bit)÷2}

β=進行穿孔之加工時穿孔之半徑(加算孔部109的半徑與電鍍部110之厚度而成者)其結果,各孔部109在背鑽加工中的各加工深度L2c,可由以下之計算式來算出。 β = the radius of the perforation during the processing of the perforation (the radius of the hole portion 109 and the thickness of the plating portion 110). As a result, the respective machining depths L2c of the hole portions 109 in the back drilling process can be calculated by the following formula To calculate.

L2c=Lnd×(L2m1-αave-tAL)/L2d-td+tAL+角tan2 Lnd=設計上的基準餘長 L2c=Lnd×(L2m1-αave-tAL)/L2d-td+tAL+corner tan2 Lnd=Design base length

L2m1=載置於加工台26上的下板111上的基板101上,更載置固定有厚度已知的鋁材上板301的狀態下,提取作為存在 於下板111的各區域201之個別的座標值域內者的各背鑽加工位置的實測高度 L2m1=on the substrate 101 placed on the lower plate 111 of the processing table 26, and further, the aluminum plate upper plate 301 having a known thickness is placed and fixed, and the individual regions 201 existing as the lower plate 111 are extracted. Measured height of each back-drilling machining position of the coordinate range

αave=加工台26上的下板111中,各區域201個別之測定點203的實測高度的平均值 Aveave = the average of the measured heights of the individual measurement points 203 in the lower plate 111 on the processing table 26

L2d=設計上之基板101的厚度 L2d=the thickness of the substrate 101 on the design

td=設計上的預留誤差範圍的長度 Td=the length of the design's reserved error range

tAL=鋁材上板301的厚度 tAL=thickness of aluminum upper plate 301

此時,使用作為鋁材上板301之鋁板其厚度只要是已知即可,但考慮在使用時的便利性,及鋁材上板301本身的厚度會發生的誤差範圍等,以使用厚度為0.15mm左右者較妥當。此時,雖然該厚度之偏差會發生±10μm左右的誤差,但由於在不使用鋁材上板301時,必須使進行背鑽加工之孔部109的中心線,與進行背鑽加工之鑽頭3的中心線精密地一致,而且在背鑽加工中須知強固定支持以防止鑽頭3因斜行而發生芯偏差,因此考慮其所需的程序及因兩中心線的偏差或芯偏差所造成的背鑽加工的加工深度之誤差,使用鋁材上板301以防止因該中心線的偏差所造成之誤差發生,是有意義的。 In this case, the thickness of the aluminum plate used as the aluminum upper plate 301 may be as long as it is known, but the convenience in use and the error range of the thickness of the aluminum upper plate 301 itself may be considered, and the thickness is used. About 0.15mm is more appropriate. At this time, although the deviation of the thickness may cause an error of about ±10 μm, since the aluminum plate 301 is not used, the center line of the hole portion 109 for performing the back drilling process and the drill bit 3 for performing the back drilling process must be performed. The center line is precisely consistent, and strong support is required in the back-drilling process to prevent the core 3 from deviating due to skewing, so consider the required procedure and the back caused by the deviation of the two centerlines or the core deviation. It is meaningful to use the aluminum upper plate 301 to prevent the error caused by the deviation of the center line from occurring in the machining depth of the drilling process.

另一方面,以鑽頭3對具有電鍍部110之孔部109進行背鑽加工,該電鍍部110會受鑽頭3切削而產生特異的線狀切屑。當基板101上載置有鋁材上板301,在鑽頭3的前端附著有此線狀的切 屑於狀態下接觸鋁材上板301,則當下降距離資訊檢測機構K要檢測下一個穿孔的孔部109的下降距離資訊時,此線狀的切屑會成為外在不良要因,妨礙下降距離資訊之檢測。因此,雖然經常地除去附著於鑽頭3前端的該切屑即可,但是在對多數的基板連續進行多數的背鑽加工時,為除去切屑所需的時間及手續會增加基板加工的成本。因此,簡易且迅速地除去附著於鑽頭3前端的線狀的切屑之方法,是在進行背鑽加工時,於鋁材上板301上更加載置固定電木製的電木上板302。藉此,當鑽頭3前端以附著有線狀的切屑的狀態要檢測下一個穿孔的孔部109之下降距離資訊時,首先鑽頭3的前端要接觸電木上板302而對電木上板302進行穿孔,因此作為絕緣物之電木上板302之切屑,會將附著於鑽頭3前端的電鍍部110之線狀的切屑推開而除去。藉此,無需採用特別的除去手段,就可以連續地對穿孔的孔部109檢測下降距離資訊。 On the other hand, the hole portion 109 having the plating portion 110 is back-drilled by the drill 3, and the plating portion 110 is cut by the drill 3 to generate specific linear chips. When the aluminum plate upper plate 301 is placed on the substrate 101 and the linear chip is attached to the front end of the drill bit 3 in contact with the aluminum upper plate 301, the lower distance information detecting mechanism K detects the next perforated hole portion. When the distance information of 109 is reduced, this linear chip will become an external defect and hinder the detection of the falling distance information. Therefore, the chips adhering to the tip end of the drill 3 are often removed. However, when a large number of back-drilling processes are continuously performed on a plurality of substrates, the time and procedure required for removing the chips increase the cost of the substrate processing. Therefore, the method of removing the linear chips adhering to the tip end of the drill 3 in a simple and rapid manner is to load and fix the bakelite upper plate 302 of the bakelite on the aluminum upper plate 301 during the back drilling process. Thereby, when the leading end of the drill bit 3 is to detect the falling distance information of the next perforated hole portion 109 in a state in which the wire-like chips are attached, first, the front end of the drill bit 3 is in contact with the bakelite upper plate 302 to perform the bakelite upper plate 302. Since the perforations are formed, the chips of the bakelite plate 302 which is the insulator are pushed away by the linear chips which adhere to the plated portion 110 at the tip end of the drill 3. Thereby, the drop distance information can be continuously detected on the perforated hole portion 109 without using a special removal means.

附帶一提,對於使用鋁材上板301(厚度0.15mm)及電木上板302(厚度1mm)的本實施例,也使用與實施例1同樣的實驗體及條件,對一百個穿孔的孔部進行背鑽加工。之後從該實驗體切除各孔部,在顯微鏡下測定實際上的預留誤差範圍的長度,與基準預留誤差範圍的長度作比較,發現其差異都在±25μm之內。 Incidentally, for the present embodiment using the aluminum upper plate 301 (thickness 0.15 mm) and the bakelite upper plate 302 (thickness 1 mm), the same experimental body and conditions as in the first embodiment were used, and one hundred perforations were used. The hole is drilled back. Thereafter, each of the hole portions was cut out from the test body, and the length of the actual reserved error range was measured under a microscope, and compared with the length of the reference reserved error range, the difference was found to be within ±25 μm.

實施例3 Example 3

然而,基板加工裝置中的下降距離資訊檢測機構,在實施例1 中,為了除去在檢測器9檢測電流變化時的外在不良要因,而設置消除電路10或旁通電路5等,也可以採用更簡略化的構造,以高頻發振器6、變流器7a、檢波電路8、檢測器9及旁通電路來形成下降距離資訊檢測機構K1。也就是,如圖8所示,將GDN線11從作為高頻電源的高頻發振器6連接到基板加工裝置B的殼體27,同時輸出線12連接變流器7a的輸入捲線3的一端,且將該輸入捲線13的另一端連接轉軸本體1。而此變流器7a的輸入捲線3連接轉軸本體1的中間,設有旁通電路5。也就是,如實施例1所示的下降距離資訊檢測機構K中,省略消除電路10之部分而成的構造,因此雖然變流器是使用不具有消除捲線14的變流器7a,也只在這一點有差異。 However, in the first embodiment, in the first embodiment, in order to remove the external defect factor when the detector 9 detects a change in current, the cancel circuit 10 or the bypass circuit 5 may be provided. In a more simplified configuration, the falling distance information detecting means K1 is formed by the high frequency oscillator 6, the current transformer 7a, the detecting circuit 8, the detector 9, and the bypass circuit. That is, as shown in Fig. 8, the GDN line 11 is connected from the high frequency oscillator 6 as a high frequency power source to the casing 27 of the substrate processing apparatus B, while the output line 12 is connected to one end of the input winding 3 of the converter 7a, And the other end of the input winding wire 13 is connected to the spindle body 1. The input winding 3 of the converter 7a is connected to the middle of the spindle body 1, and a bypass circuit 5 is provided. That is, in the falling distance information detecting means K shown in the first embodiment, the structure in which the portion of the eliminating circuit 10 is eliminated is omitted. Therefore, although the current transformer uses the current transformer 7a which does not have the winding wire 14, it is only This is different.

此實施例中的下降距離資訊檢測機構K1,該機構K1本身並沒有排除外在不良要因的機能。因此,如轉軸本體1與轉子2之間使用的軸承是空氣軸承時一樣,在可充分容許轉軸本體1與轉子2之間的靜電容量CR高達1000pF以上等,鑽頭前端是否接觸表面導體層之判定精度降低之狀況、或是另設濾件將流到變流器之輸入捲線的電流只限於來自高頻發振器之特定頻率的電流之狀況時,下降距離資訊檢測機構K1可採用單純的構成來降低成本。而且藉由在連接變流器7a的輸入捲線13與轉軸本體1的結線中間,設置連結殼體27間的旁通電路5,可使轉軸a不再是所謂的浮動金屬,而不必裝設防止觸電的保護機能。而且,藉此可進一步使諧波電流等電流 經由鑽頭3流往殼體27,防止因該等電流所造成的鑽頭3的金属面或鑽頭3表面的覆膜破損,而可長期使用鑽頭。 In the embodiment, the falling distance information detecting means K1 does not itself exclude the function of the external bad factor. Therefore, if the bearing used between the rotating shaft main body 1 and the rotor 2 is an air bearing, the electrostatic capacity CR between the rotating shaft main body 1 and the rotor 2 can be sufficiently allowed to be 1000 pF or more, and the front end of the drill bit is in contact with the surface conductor layer. When the accuracy is lowered, or the current of the filter element flowing to the input winding of the converter is limited to the current of the specific frequency from the high frequency oscillator, the falling distance information detecting mechanism K1 can be reduced by a simple configuration. cost. Further, by providing the bypass circuit 5 between the connection housings 27 in the middle of the connection line connecting the input winding 13 of the current transformer 7a and the spindle body 1, the rotation shaft a can no longer be a so-called floating metal, and it is not necessary to prevent it. Protection against electric shock. Further, by this, a current such as a harmonic current can be further flown to the casing 27 via the drill 3, and the metal surface of the drill 3 or the surface of the drill 3 due to the current can be prevented from being damaged, and the drill can be used for a long period of time.

而且,至少該實施例中的下降距離資訊檢測機構K1就是以往使用的下降距離資訊檢測機構K1,因此即便使用此下降距離資訊檢測機構K1,也可以藉由裝設實施例1中說明過的具提取、算出機構的CNC控制電路S,將以往的基板加工裝置構成為可正確且精密地控制背鑽加工的加工深度的基板加工裝置。 Further, at least the falling distance information detecting means K1 in the embodiment is the conventional falling distance information detecting means K1. Therefore, even if the falling distance information detecting means K1 is used, the article described in the first embodiment can be installed. The CNC control circuit S of the extraction and calculation mechanism configures the conventional substrate processing apparatus as a substrate processing apparatus that can accurately and precisely control the processing depth of the back-drilling process.

另外,如果另設防止觸電的機構或是無需考慮鑽頭之損傷等時,也可以考慮使用更加省略前述旁通電路5的下降距離資訊檢測機構。 Further, if a mechanism for preventing electric shock or a damage of the drill is not required, it is also conceivable to use a falling distance information detecting mechanism that further omits the bypass circuit 5.

實施例4 Example 4

圖9顯示實施例4。相對於圖1所示的實施例1,是令轉軸1與柱體29(與殼體27同電位)絕緣,故基板101相對於加工台26可以是絕緣或是非絕緣的方式,本實施例是轉軸1由圖未示的柱體(與殼體27同電位)以不絕緣的狀態直接安裝,故基板101是以與加工台26絕緣的狀況載置於加工台26上。本實施例中,由於使用此用於絕緣的下板111,故不可使用鋁製的下板111。 Figure 9 shows Example 4. With respect to the first embodiment shown in FIG. 1, the rotating shaft 1 is insulated from the cylinder 29 (the same potential as the housing 27), so that the substrate 101 can be insulated or uninsulated relative to the processing table 26, this embodiment is The rotating shaft 1 is directly mounted in a state of being uninsulated by a cylinder (not shown) which is not shown, so that the substrate 101 is placed on the processing table 26 in a state of being insulated from the processing table 26. In the present embodiment, since the lower plate 111 for insulation is used, the lower plate 111 made of aluminum cannot be used.

本實施例中的下降距離資訊檢測機構K2如圖9所記載,具有將串聯配置的電容器50與雙行組件開關51為一組,而將複數組的該電容器與開關並聯配置的模擬基板電路52。也就是,令作為檢測對 象物之基板101與基板加工裝置C的殼體27絕緣,於殼體27內的加工台26上,以具有下板上面銅箔層112之玻璃環氧樹脂製之下板111絕緣並固定後,從高頻發振器6的一側的GND線11連接前述殼體27,同時連接前述模擬基板電路52之一側端子,另一側的輸出線12,藉由連接變流器7b之2個輸入捲線13、13a各自之同方向且同線圈數之結束捲繞處,與開始捲繞處之相互連接的中間,使輸入捲線13、13a成為捲繞方向相反同線圈數之線圈,當各輸入捲線13、13a有同量的電流通過時,發生於變流器7b之鐵心15的磁束之方向會相互抵消,使輸出捲線16側不會有電流產生。另外,前述變流器7b之兩個輸入捲線13、13a各自的另一端,是一側連接作為檢測對象物之基板101的表面導體層107,另一側連接前述模擬基板電路52之另一側端子。而藉由調整模擬基板電路52之雙行組件開關51,令發生於作為檢測對象物之基板101的表面導體層107與殼體27之間的靜電容量概略相等,使各輸入捲線13、13a有同量之電流流過時,產生於前述變流器7a之磁束的方向相互抵消,因此可以由檢測器9檢測到轉軸a之鑽頭3前端與作為檢測對象物之基板101的表面導體層107之接觸所產生的電流的變化,作為輸出自變流器7a之電流的變化,成為下降距離資訊檢測機構K2。 As shown in FIG. 9, the falling distance information detecting means K2 in the present embodiment has a dummy substrate circuit 52 in which a capacitor 50 and a two-row unit switch 51 arranged in series are arranged in a group, and a capacitor of the complex array is arranged in parallel with the switch. . That is, the substrate 101 as the object to be inspected is insulated from the casing 27 of the substrate processing apparatus C, and is formed on the processing table 26 in the casing 27 under the glass epoxy resin having the copper foil layer 112 on the lower plate. After the board 111 is insulated and fixed, the housing 27 is connected from the GND line 11 on one side of the high frequency oscillator 6 while the one side terminal of the analog board circuit 52 is connected, and the output line 12 on the other side is connected by the converter. The two input winding wires 13 and 13a of the device 7b are in the same direction and the end winding of the same number of coils, and the input winding wires 13 and 13a are in the same winding direction as the number of coils. In the coil, when the respective input winding wires 13, 13a have the same amount of current, the directions of the magnetic fluxes occurring in the core 15 of the current transformer 7b cancel each other, so that no current is generated on the output winding 16 side. Further, the other end of each of the two input winding wires 13 and 13a of the current transformer 7b is a surface conductor layer 107 on which one side of the substrate 101 as a detection target is connected, and the other side is connected to the other side of the analog substrate circuit 52. Terminal. By adjusting the two-row unit switch 51 of the analog substrate circuit 52, the electrostatic capacitance between the surface conductor layer 107 and the casing 27 of the substrate 101 as the object to be detected is substantially equal, so that the input winding wires 13 and 13a are provided. When the same amount of current flows, the directions of the magnetic fluxes generated in the current transformer 7a cancel each other out, so that the detector 9 can detect the contact between the front end of the drill shaft 3 of the rotary shaft a and the surface conductor layer 107 of the substrate 101 as the object to be detected. The change in the generated current becomes a falling distance information detecting means K2 as a change in the current output from the current transformer 7a.

實施例4所示的下降距離資訊檢測機構K2,可以在檢測下降距離資訊時排除外在不良要因,在設於已知的基板加工裝置 時,與實施例3的狀況同樣地,使用該等下降距離資訊檢測機構K2,藉由設置具有實施例1中說明的記憶、提取、算出機構之CNC控制電路S,將以往的基板加工裝置構成為可正確且精密地控制背鑽加工的加工深度的基板加工裝置。 The falling distance information detecting means K2 shown in the fourth embodiment can eliminate the external defect factor when detecting the falling distance information, and can use the same as in the case of the third embodiment when it is provided in a known substrate processing apparatus. The distance information detecting means K2 is provided with a CNC control circuit S having the memory, extraction, and calculation means described in the first embodiment, and the conventional substrate processing apparatus is configured as a substrate which can accurately and precisely control the processing depth of the back drilling process. Processing device.

本申請案之發明中,設有下降距離資訊檢測機構之基板加工裝置,以及該基板加工裝置的使用方法,在對基板的穿孔進行背鑽加工時,可防止因該基板本身所具有的厚度之誤差或撓曲,或者是因下板之厚度的誤差、以至於基板加工裝置的加工台本身的傾斜或撓曲等多數種的要因所造成的加工深度的誤差發生,而可正確且精密地控制加工深度,更進一步,由於可以將設計上的預留誤差範圍的長度設定為較短,因此可以低成本達成加工防止雜訊之發生等之不良狀況之基板,且除了背鑽加工之外,在對基板進行開孔到一定深度為止的加工中,也可以正確且精密地控制其加工深度。 In the invention of the present application, a substrate processing apparatus having a falling distance information detecting mechanism and a method of using the substrate processing apparatus can prevent the thickness of the substrate itself from being performed by back drilling of the substrate. Error or deflection, or the error of the machining depth due to the error of the thickness of the lower plate, such as the inclination or deflection of the processing table itself of the substrate processing apparatus, can be accurately and precisely controlled Further, since the length of the design error range can be set to be short, it is possible to achieve a low-cost substrate for preventing the occurrence of noise, and the like, in addition to the back-drilling process, In the processing of opening the substrate to a certain depth, the processing depth can be accurately and precisely controlled.

Claims (8)

一種加工深度控制機構,是使用電腦而可對多層印刷配線基板進行背鑽加工的基板加工裝置中,在進行背鑽加工時控制轉軸的鑽頭的下降距離,該加工深度控制機構具有下降距離資訊檢測機構,藉由轉軸的鑽頭接觸檢測對象物以檢測出下降距離資訊,且具有記錄媒體、提取機構、及算出機構,前述記錄媒體,記錄有以下1至5所分別記載的位置資訊等:1.關於設計上的基板厚度、基準餘長及設計上的預留誤差範圍(殘留量)的長度,以及設於穿孔之孔部的電鍍層之層的預定厚度及鑽頭之尖端角之角度的數值資訊;2.載置於基板加工裝置的加工台上,且至少上表面構成為導體層的下板中,依下述設定所決定的測定點及各區域在平面上的座標位置資訊,而該測定點是:格子狀地區分出複數的區域,以其各區域為單位,並以同一的基準決定的一個測定點,或是在其各區域中,對其各區域以同一的基準更進一步區分成格子狀的子區域,而以各子區域為單位,並以同一的基準決定的一個測定點;3.對於前述各測定點,藉由令進行背鑽加工的鑽頭所設置的轉軸下降,以前述下降距離資訊檢測機構所測定到的各測定點個別的高度位置資訊; 4.存在於載置於基板加工裝置的加工台上的前述下板上的多層印刷配線基板上,或者是存在於切出複數的多層印刷配線基板前的母板(以下單稱為「母板」)上的各背鑽加工位置在平面上的座標位置資訊;5.藉由令前述轉軸下降至前述基板或是母板的各背鑽加工位置,以前述下降距離資訊檢測機構測定到的各個各背鑽加工位置個別的高度位置資訊;前述提取機構從前述各區域個別的座標位置資訊、及存在於多層印刷配線基板或其母板上的背鑽加工位置個別的座標位置資訊,提取背鑽加工時下板上載置有多層印刷配線基板或其母板的狀態下,存在於前述下板的各區域各別的座標值域內的背鑽加工位置;前述算出機構以根據下述算式自動算出的個別背鑽加工深度L2c,自動控制基板加工裝置中背鑽加工的加工深度:L2c=Lnd×(L2m-αave)/L2d-td+角tan1;Lnd=設計上的基準餘長;L2m=提取載置於加工台上的下板上的多層印刷配線基板或其母板中,位於存在於下板的各區域之個別的座標值域內之各背鑽加工位置的實測高度;αave=加工台上的下板中之個別區域的測定點之實測高度的平均值;L2d=設計上的多層印刷配線基板厚度;td=設計上的預留誤差範圍的長度; 角tan1=穿孔的電鍍部之層的預定厚度×tan{(180度-鑽頭的前端角的角度)÷2}。  A processing depth control mechanism is a substrate processing apparatus capable of back-drilling a multilayer printed wiring board using a computer, and controlling a falling distance of a drill bit of the rotating shaft during back drilling processing, the processing depth control mechanism having a falling distance information detection The mechanism is configured to detect the falling distance information by contacting the detecting object with the rotating shaft, and includes a recording medium, an extracting means, and a calculating means for recording the position information and the like described in the following 1 to 5: 1. Numerical information on the thickness of the substrate on the design, the length of the reference and the length of the design tolerance (residual amount), and the predetermined thickness of the layer of the plating layer provided in the hole portion of the perforation and the angle of the tip angle of the drill bit 2. The measurement is performed on the processing table of the substrate processing apparatus, and at least the upper surface is configured as a lower layer of the conductor layer, and the measurement point determined by the following setting and the coordinate position information of each area on the plane are determined. The point is: a grid-shaped area that divides a plurality of areas, a unit of each area, and a measurement point determined by the same reference, or In each of the regions, each of the regions is further divided into a lattice-shaped sub-region on the same basis, and one measurement point determined by each sub-region and on the same basis; 3. For each of the above-mentioned measurement points, The height position information of each measurement point measured by the lowering distance information detecting means is lowered by the rotation shaft provided by the drill bit for performing the back drilling processing; 4. The present invention is present on the processing table placed on the substrate processing apparatus. The position of the back-drilling processing position on the plane on the multilayer printed wiring board on the lower board or the mother board (hereinafter simply referred to as "master board") which is present in front of the plurality of printed wiring boards. 5. The height position information of each of the back drilling processing positions measured by the descending distance information detecting mechanism by lowering the rotating shaft to the back drilling processing position of the substrate or the mother board; The individual coordinate position information of each of the above regions, and the coordinate position information of the back drilling processing position existing on the multilayer printed wiring board or the mother board thereof, and extracting the back drill In the state in which the multilayer printed wiring board or the mother board is placed on the lower plate during processing, the back drilling processing position exists in each coordinate range of each region of the lower plate; the calculation means automatically calculates according to the following formula The individual back drilling processing depth L2c, automatic control of the processing depth of the back drilling processing in the substrate processing apparatus: L2c = Lnd × (L2m - αave) / L2d - td + angle tan1; Lnd = design basis excess length; L2m = extraction load The multilayer printed wiring substrate or its mother board placed on the lower plate on the processing table, the measured height of each back-drilling processing position in the individual coordinate range of each region existing in the lower plate; αave=on the processing table The average of the measured heights of the measurement points of the individual regions in the lower plate; L2d = the thickness of the multilayer printed wiring substrate on the design; td = the length of the design tolerance range; the angle tan1 = the layer of the perforated plating portion The predetermined thickness × tan {(180 degrees - the angle of the front end angle of the drill bit) ÷ 2}.   如請求項1所述的加工深度控制機構,其中,下降距離資訊檢測機構至少具有高頻交流電源、具反應器的旁通電路、及高頻用的變流器,高頻交流電源之輸出之一側連接殼體,另一側經由前述變流器連接與殼體絕緣的轉軸,且在其與該轉軸連接之間,設有具反應器的旁通電路連結殼體,藉由該轉軸之轉子之鑽頭接觸屬於導體之檢測對象物,使來自高頻交流電源的高頻電流經由變流器流入轉軸,再經由導體物及導體層間的静電容量流入前述高頻交流電源,在變流器的輸出側產生電流,並藉由以檢測器檢測出該電流的變化,而構成為可認識鑽頭的下降距離資訊之下降距離資訊檢測機構。  The processing depth control mechanism according to claim 1, wherein the falling distance information detecting mechanism has at least a high frequency alternating current power source, a bypass circuit with a reactor, and a high frequency converter, and the output of the high frequency alternating current power source One side is connected to the housing, and the other side is connected to the rotating shaft insulated from the housing via the converter, and between the connection with the rotating shaft, a bypass circuit connecting housing with a reactor is provided, by the rotating shaft The drill bit of the rotor contacts the object to be detected by the conductor, and the high-frequency current from the high-frequency AC power source flows into the rotating shaft through the converter, and flows into the high-frequency AC power source via the capacitance between the conductor and the conductor layer. The output side generates a current, and by detecting a change in the current by the detector, it is configured as a falling distance information detecting means that can recognize the falling distance information of the drill bit.   如請求項1所述的加工深度控制機構,其中,下降距離資訊檢測機構具有高頻交流電源、具反應器之旁通電路、消除電路、及具輸入捲線、消除捲線、及一個以上輸出捲線的高頻用變流器,前述輸入捲線與前述消除捲線是線圈數相同但捲繞方向相反,而消除電路具有逆旁通電路及複數套的模擬電路,前述逆旁通電路是具有與旁通電路同一静電容量的反應器,而各套模擬電路分別是以串聯配置的電容器與開關構成為一組,且將複數組的該電容器與開關並聯配置成為一個模擬電路,且當與殼體絕緣的轉軸有通電時,各套的模擬電路分別對應產生自轉軸的馬達的各相的捲線與轉軸本體間、及轉軸本體與殼體間的各静電容量, 前述逆旁通電路與該複數套的模擬電路是並聯配置,藉由將檢測對象物固定於基板加工裝置的殼體內的加工台上,且前述高頻交流電源之輸出的一側連接前述殼體、另一側連接前述變流器的輸入捲線與消除捲線的中間,使該輸入捲線的另一端連接轉軸本體,同時經由旁通電路連接殼體,消除捲線的另一端並聯連接逆旁通電路的一端及各模擬電路的一端,逆旁通電路的另一端連接殼體,與轉軸本體絕緣的殼體與轉軸之間產生的静電容量相對應的模擬電路的另一端連接殼體、與轉軸本體與馬達捲線之間產生的静電容量相對應的模擬電路的另一端連接轉軸的馬達的各相的捲線,且調整模擬電路的開關使各對應的静電容量成為概略相等,因在輸入捲線與消除捲線流動的電流而產生於前述變流器的磁束的方向相互抵消,而可從檢測器檢測出因轉軸的鑽頭前端與檢測對象物之接觸產生的電流的變化,作為輸出自變流器的電流的變化,而構成為可認識鑽頭的下降距離資訊之下降距離資訊檢測機構。  The processing depth control mechanism according to claim 1, wherein the falling distance information detecting mechanism has a high frequency alternating current power source, a bypass circuit with a reactor, a eliminating circuit, and an input winding, a winding wire, and one or more output winding wires. In the high-frequency current transformer, the input winding wire and the eliminating winding wire are the same number of coils but the winding direction is opposite, and the eliminating circuit has an inverse bypass circuit and a plurality of analog circuits, and the reverse bypass circuit has a bypass circuit a reactor of the same electrostatic capacity, and each set of analog circuits is formed by a capacitor and a switch arranged in series, and the capacitor of the complex array is arranged in parallel with the switch as an analog circuit, and is insulated from the casing. When the rotating shaft is energized, the analog circuits of the sets respectively correspond to the respective electrostatic capacitances between the winding wire and the rotating shaft body of each phase of the motor that generates the rotating shaft, and between the rotating shaft body and the housing, and the reverse bypass circuit and the plurality of sets The analog circuit is arranged in parallel, by fixing the object to be detected on a processing table in the casing of the substrate processing apparatus, and the aforementioned high frequency alternating current One side of the output is connected to the housing, and the other side is connected to the middle of the input winding and the unwinding line of the current converter, so that the other end of the input winding is connected to the rotating shaft body, and the housing is connected via the bypass circuit to eliminate the winding. The other end is connected in parallel with one end of the reverse bypass circuit and one end of each analog circuit, and the other end of the reverse bypass circuit is connected to the housing, and the analog circuit corresponding to the electrostatic capacitance generated between the housing insulated from the rotating shaft body and the rotating shaft The other end of the connecting circuit, the other end of the analog circuit corresponding to the electrostatic capacitance generated between the rotating shaft body and the motor winding wire is connected to the winding of each phase of the motor of the rotating shaft, and the switch of the analog circuit is adjusted to make each corresponding electrostatic capacity In the same manner, the direction of the magnetic flux generated in the current transformer due to the current flowing through the input winding and the elimination winding is canceled, and the current generated by the contact between the tip end of the rotating shaft and the object to be detected can be detected from the detector. The change, as a change in the current output from the converter, constitutes a falling distance information detector that can recognize the falling distance information of the drill bit Structure.   如請求項1所述的加工深度控制機構,其中,下降距離資訊檢測機構具有高頻交流電源、具線圈數相同的兩個輸入捲線及一個以上輸出捲線的高頻用變流器、及模擬基板電路,該模擬基板電路是將串聯配置的電容器與開關為一組,而將複數組的該電容器與開關並聯配置,前述高頻交流電源之輸出的一側連接前述殼體且連接前述模擬基板電路之一側端子,另一側經由前述變流器的兩個輸入捲線,連接檢測對象物及前述模擬基板電路之另一側端子, 藉由調整模擬基板電路的開關,令與基板加工裝置的殼體絕緣地固定在殼體內的加工台上的檢測對象物與殼體間產生的静電容量略相等,使各輸入捲線電流令前述變流器產生的磁束相互抵消,而可從檢測器檢測出因轉軸的鑽頭前端與檢測對象物之接觸產生的電流的變化,作為輸出自變流器的電流的變化,而構成為可認識鑽頭的下降距離資訊之下降距離資訊檢測機構。  The processing depth control mechanism according to claim 1, wherein the falling distance information detecting mechanism has a high frequency alternating current power source, two input winding wires having the same number of coils, and a high frequency current transformer having one or more output winding wires, and an analog substrate a circuit, the analog substrate circuit is a capacitor and a switch arranged in series, and the capacitor of the multiple array is arranged in parallel with the switch, and one side of the output of the high-frequency AC power source is connected to the housing and connected to the analog substrate circuit One side terminal and the other side are connected to the other end terminal of the analog substrate circuit via the two input winding wires of the current transformer, and the shell of the substrate processing device is adjusted by adjusting the switch of the analog substrate circuit The electrostatic capacitance generated between the detection object fixed to the processing table in the casing and the casing is slightly equal, so that the input winding current causes the magnetic flux generated by the converter to cancel each other, and can be detected from the detector. The change in current generated by the contact between the tip of the drill shaft and the object to be detected is a change in the current output from the converter. It is recognizable from the drop drop the drill information from the testing organization of information.   一種基板加工裝置,具備如請求項1至請求項4中任一請求項所述的加工深度控制機構。  A substrate processing apparatus comprising the processing depth control mechanism as claimed in any one of claims 1 to 4.   一種使用如請求項5所述的任一種基板加工裝置來進行的背鑽加工方法,其中:1.關於設計上的基板厚度、基準餘長及設計上的預留誤差範圍(殘留量)的長度,以及設於穿孔之孔部的電鍍層之層的預定厚度及鑽頭之尖端角之角度的數值資訊;2.載置於基板加工裝置的加工台上,且至少上表面構成為導體層的下板中,依下述設定所決定的測定點及各區域在平面上的座標位置資訊,而該測定點是:格子狀地區分出複數的區域,以其各區域為單位,並以同一的基準決定的1個測定點,或是在其各區域中,對其各區域以同一的基準更進一步區分成格子狀的子區域,而以各子區域為單位,並以同一的基準決定的一個測定點; 3.對於前述各測定點,藉由令進行背鑽加工的鑽頭所設置的轉軸下降,以前述下降距離資訊檢測機構所測定到的各測定點個別的高度位置資訊;4.存在於載置於基板加工裝置的加工台上的前述下板上的多層印刷配線基板上,或者是存在於切出複數的多層印刷配線基板前的母板(以下單稱為「母板」)上的各背鑽加工位置在平面上的座標位置資訊;5.藉由令前述轉軸下降至前述基板或是母板的各背鑽加工位置,以前述下降距離資訊檢測機構測定到的各個各背鑽加工位置個別的高度位置資訊;將以上1至5所分別記載的位置資訊等記錄於記錄媒體中,且從前述各區域個別的座標位置資訊、及存在於多層印刷配線基板或其母板上的背鑽加工位置個別的座標位置資訊,提取背鑽加工時下板上載置有多層印刷配線基板或其母板的狀態下,存在於前述下板的各區域各別的座標值域內的背鑽加工位置,再根據以下述算式自動算出的個別背鑽加工深度L2c,自動控制基板加工裝置中背鑽加工的加工深度:L2c=Lnd×(L2m-αave)/L2d-td+角tan1;Lnd=設計上的基準餘長;L2m=載置於加工台上的下板上的多層印刷配線基板或其母板中,位於存在於下板的各區域之個別的座標值域內之各背鑽加工位置的實測高度; αave=加工台上的下板之個別區域的測定點之實測高度的平均值;L2d=設計上的多層印刷配線基板厚度;td=設計上的預留誤差範圍的長度;角tan1=穿孔的電鍍部之層的預定厚度×tan{(180度-鑽頭的前端角的角度)÷2}。  A back-drilling processing method using any one of the substrate processing apparatuses according to claim 5, wherein: 1. the length of the substrate thickness, the reference residual length, and the design reserved error range (residual amount) in design And the numerical information of the predetermined thickness of the layer of the plating layer provided in the hole portion of the perforation and the angle of the tip angle of the drill bit; 2. placed on the processing table of the substrate processing apparatus, and at least the upper surface is formed as a lower layer of the conductor layer In the board, the measurement point determined by the following setting and the coordinate position information of each area on the plane are determined, and the measurement point is: the area in which the grid area is separated by a plurality of areas, in units of each area, and on the same basis One of the determined measurement points, or a sub-region in which each region is further divided into a lattice-like sub-region on the same basis, and each sub-region is determined by the same reference. 3. For each of the above-mentioned measurement points, the height position information of each measurement point measured by the lowering distance information detecting means is lowered by the rotation axis provided by the drill bit for back drilling processing. 4. The multilayer printed wiring board on the lower plate placed on the processing table of the substrate processing apparatus or the mother board present in front of the plurality of multilayer printed wiring boards (hereinafter referred to as "mother board" ") the coordinate position information of each back-drilling processing position on the plane; 5. by descenting the rotating shaft to the backing processing position of the substrate or the mother board, each of the measured by the falling distance information detecting mechanism The height position information of each of the back drilling processing positions; the position information and the like described in each of the above 1 to 5 are recorded on the recording medium, and the coordinate information of each of the respective regions and the presence of the multilayer printed wiring board or the mother thereof The individual coordinate position information of the back-drilling processing position on the board is extracted in the state where the lower board is placed with the multilayer printed wiring board or the mother board in the back drilling process, and exists in each coordinate range of each area of the lower board The back drilling processing position, and then automatically control the machining depth of the back drilling processing in the substrate processing apparatus according to the individual back drilling processing depth L2c calculated by the following formula: L2c=Lnd×(L2m -αave)/L2d-td+corner tan1; Lnd=designed reference excess length; L2m=multilayer printed wiring substrate or its mother board placed on the lower plate on the processing table, located in each region existing on the lower plate The measured height of each back-drilling machining position in the individual coordinate range; αave = the average of the measured heights of the measured points of the individual areas of the lower plate on the processing table; L2d = the thickness of the multilayer printed wiring substrate on the design; td = length of the design tolerance range; angle tan1 = predetermined thickness of the layer of the perforated plated portion x tan {(180 degrees - angle of the tip angle of the drill bit) ÷ 2}.   一種使用如請求項5所述的任一種基板加工裝置來進行的背鑽加工方法,其中:1.關於設計上的基板厚度、基準餘長及設計上的預留誤差範圍(殘留量)的長度,以及在未設電鍍部的要進行背鑽加工的穿孔的孔部之半徑及鑽頭之尖端角之角度的數值資訊;2.載置於基板加工裝置的加工台上,且至少上表面構成為導體層的下板中,依下述設定所決定的測定點及各區域在平面上的座標位置資訊,而該測定點是:格子狀地區分出複數的區域,以其各區域為單位,並以同一的基準決定的一個測定點,或是在其各區域中,對其各區域以同一的基準更進一步區分成格子狀的子區域,而以各子區域為單位,並以同一的基準決定的一個測定點;3.對於前述各測定點,藉由令進行背鑽加工的鑽頭所設置的轉軸下降,以前述下降距離資訊檢測機構所測定到的各測定點個別的高度位置資訊; 4.存在於載置於基板加工裝置的加工台上的前述下板上的多層印刷配線基板上,或者是存在於切出複數的多層印刷配線基板前的母板(以下單稱為「母板」)上的各背鑽加工位置在平面上的座標位置資訊;5.在前述基板或是母板上載置有厚度已知的鋁材上板的狀態下,藉由令前述轉軸下降至其各背鑽加工位置,以前述下降距離資訊檢測機構測定到的各個各背鑽加工位置個別的高度位置資訊;將以上1至5所分別記載的位置資訊等記錄於記錄媒體中,且從前述各區域個別的座標位置資訊、及存在於多層印刷配線基板或其母板上的背鑽加工位置個別的座標位置資訊,提取背鑽加工時下板上載置有多層印刷配線基板或其母板的狀態下,存在於前述下板的各區域各別的座標值域內的背鑽加工位置,再根據以下述算式自動算出的個別背鑽加工深度L2c,自動控制基板加工裝置中背鑽加工的加工深度:L2c=Lnd×(L2m1-αave-tAL)/L2d-td+tAL+角tan2;Lnd=設計上的基準餘長;L2m1=載置於加工台上的下板上的多層印刷配線基板或其母板上,更載置固定有厚度已知的鋁材上板的狀態下,提取作為存在於下板的各區域之個別的座標值域內的各背鑽加工位置的實測高度; αave=加工台上的下板中之個別區域的測定點之實測高度的平均值;L2d=設計上的多層印刷配線基板厚度;td=設計上的預留誤差範圍的長度;tAL=鋁材上板的規定厚度;角tan2=未設電鍍部的穿孔的預定厚度×tan{(180度-鑽頭的前端角的角度)÷2}。  A back-drilling processing method using any one of the substrate processing apparatuses according to claim 5, wherein: 1. the length of the substrate thickness, the reference residual length, and the design reserved error range (residual amount) in design And numerical information on the radius of the hole portion of the perforated hole to be subjected to the back drilling process and the angle of the tip end angle of the drill bit in the plating portion; 2. placed on the processing table of the substrate processing apparatus, and at least the upper surface is configured as In the lower plate of the conductor layer, the measurement point determined by the following setting and the coordinate position information of each region on the plane are determined, and the measurement point is: a region in which a plurality of cells are separated by a grid-like region, in units of each region, and One measurement point determined on the same basis, or in each of its regions, the sub-regions further divided into lattices on the same basis for each region, and determined by the same sub-region and on the same basis One measurement point; 3. For each of the above-mentioned measurement points, the rotation axis set by the drill bit for back-drilling is lowered, and the respective measurement points measured by the falling distance information detecting means are individually high. Position information; 4. A multi-layer printed wiring board existing on the lower plate placed on a processing table of the substrate processing apparatus, or a mother board existing in front of a plurality of multi-layer printed wiring boards (hereinafter referred to as Information on the coordinate position of each back-drilling processing position on the plane on the "mother board"; 5. in the state where the substrate or the mother board is placed with the aluminum plate upper plate having the known thickness, by rotating the aforementioned rotating shaft To each of the back-drilling processing positions, the height position information of each of the back-drilling processing positions measured by the falling distance information detecting means is recorded, and the position information and the like described in each of the above 1 to 5 are recorded on the recording medium, and Information on the coordinate position of each of the above-mentioned regions and the coordinate position information of the back-drilling processing position existing on the multilayer printed wiring board or its mother board, and the multi-layer printed wiring board or its mother board is placed on the lower board during the back-drilling process. In the state of the back-drilling processing in the respective coordinate range of each region of the lower plate, and according to the individual back-drilling processing depth L2c automatically calculated by the following formula, The machining depth of the back drilling process in the dynamic control substrate processing device: L2c = Lnd × (L2m1 - αave - tAL) / L2d - td + tAL + angle tan2; Lnd = design basis excess length; L2m1 = placed on the processing table On the multilayer printed wiring board or the mother board on the lower panel, in a state in which an aluminum upper plate having a known thickness is further placed and fixed, each of the individual coordinate ranges existing in each region of the lower plate is extracted. The measured height of the back drilling processing position; αave = the average of the measured heights of the measurement points of the individual areas in the lower plate on the processing table; L2d = the thickness of the multilayer printed wiring substrate on the design; td = the design error margin The length of the plate; tAL = the specified thickness of the upper plate of the aluminum; the angle tan2 = the predetermined thickness of the perforation of the plated portion × tan {(180 degrees - the angle of the front end angle of the drill bit) ÷ 2}.   如請求項7所述背鑽加工方法,其中,背鑽加工時,在載置於基板加工裝置的加工台上的下板上的多層印刷配線基板或母板上,更載置厚度已知的鋁材上板,又更於其上載置可以轉軸來切削的具絕緣性的上板。  The back-drilling processing method according to claim 7, wherein, in the back-drilling process, the multilayer printed wiring board or the mother board on the lower plate placed on the processing table of the substrate processing apparatus is further loaded with a known thickness The aluminum upper plate is placed on an insulating upper plate that can be rotated by a shaft.  
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CN113347792A (en) * 2020-02-18 2021-09-03 达航科技股份有限公司 Substrate processing apparatus and mechanism for detecting descending distance information of rotating shaft thereof
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CN113079638A (en) * 2020-01-03 2021-07-06 重庆方正高密电子有限公司 Back drilling method and device for PCB
CN113079638B (en) * 2020-01-03 2023-04-07 重庆方正高密电子有限公司 Back drilling method and device for PCB
CN113347792A (en) * 2020-02-18 2021-09-03 达航科技股份有限公司 Substrate processing apparatus and mechanism for detecting descending distance information of rotating shaft thereof
TWI827128B (en) * 2022-06-16 2023-12-21 大陸商鵬鼎控股(深圳)股份有限公司 Circuit board with semi-through hole structure and manufacturing method thereof

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