TWI522023B - Spindle descending distance information detection mechanism and assembly of mandrel down distance information detection mechanism of the substrate processing device - Google Patents

Spindle descending distance information detection mechanism and assembly of mandrel down distance information detection mechanism of the substrate processing device Download PDF

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TWI522023B
TWI522023B TW102147742A TW102147742A TWI522023B TW I522023 B TWI522023 B TW I522023B TW 102147742 A TW102147742 A TW 102147742A TW 102147742 A TW102147742 A TW 102147742A TW I522023 B TWI522023 B TW I522023B
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substrate
mandrel
conductor layer
distance information
detected
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TW102147742A
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Chinese (zh)
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TW201446094A (en
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Yasuhiko Kanaya
Tsuneo Shinada
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Ofuna Entpr Japan Co Ltd
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Description

心軸下降距離資訊檢測機構及組裝有心軸下降距離資訊檢測機構之基板加工裝置 Mandrel falling distance information detecting mechanism and substrate processing device assembled with mandrel falling distance information detecting mechanism 發明領域 Field of invention

本發明是有關於一種心軸下降距離資訊檢測機構,其利用組裝有在前端已設置鑽頭之心軸的基板加工裝置,對多層構造印刷基板,特別是在進行盲孔加工或埋頭孔加工等時,可掌握鑽頭前端位置並確實地加工至該多層構造之印刷基板的期望內層導體層為止。 The present invention relates to a mandrel descent distance information detecting mechanism which uses a substrate processing apparatus in which a mandrel having a drill bit at a tip end is assembled, and a multi-layer structure printed circuit board, particularly when performing blind hole processing or countersink processing The position of the tip end of the drill bit can be grasped and reliably processed to the desired inner layer conductor layer of the printed circuit board of the multilayer structure.

發明背景 Background of the invention

以往,作為對於組裝有心軸之基板加工裝置(以下,單純稱為「裝置」。)的印刷基板(以下,單純稱為「基板」。)的加工,一般而言為人所知的有貫通孔加工或外周加工。又,所謂的貫通孔加工是指對蝕刻加工前配置於基板上之配線圖型的基板原材料,進行用以連接用於安裝元件之貫通孔或配線圖型之表與背的通孔等的孔加工者,又,所謂的外周加工是指進行基板外周或基板安裝孔、變形孔之加工者。 Conventionally, a processing of a printed circuit board (hereinafter simply referred to as a "substrate") for a substrate processing apparatus (hereinafter simply referred to as "device") in which a mandrel is assembled is generally known as a through hole. Processing or peripheral processing. In addition, the through-hole processing refers to a substrate material of a wiring pattern disposed on the substrate before the etching process, and a hole for connecting a through hole or a through-hole of the wiring pattern and the back of the substrate. The processor, in addition, the outer peripheral processing refers to a processor that performs the outer periphery of the substrate, the substrate mounting hole, and the deformed hole.

但近年伴隨著基板本身是由複數個絶緣層、與設於其 之表面或是之間的導體層所構成的多層化基板,在已結束貫通孔加工或配線圖型之蝕刻加工等的狀態下,作為對該已多層化之基板之加工,會進行盲孔加工或埋頭孔加工等。又,所謂的盲孔加工是指只將通孔之一部分削除至期望內層導體層面為止,藉此進行除去多餘之配線的加工者,又,所謂的埋頭孔加工是指將印刷基板之一部分埋頭孔加工至期望內層導體層面為止,並安裝電子零件於其之部分,或是藉由只殘留1層的背面導體,而在此進行使基板折曲之加工者。 However, in recent years, the substrate itself is composed of a plurality of insulating layers and The multilayered substrate formed on the surface or between the conductor layers is subjected to through hole processing or wiring pattern etching, etc., and blind hole processing is performed as the multilayer substrate is processed. Or countersunk hole processing. Further, the term "blind hole processing" refers to a process of removing only a part of the through hole to the desired inner layer conductor layer, thereby removing the excess wiring, and the so-called countersink processing means that one part of the printed circuit board is buried. The hole is processed to the desired inner layer conductor layer, and the electronic component is mounted thereon, or a processor for bending the substrate is performed by leaving only one layer of the back surface conductor.

在此,所謂的期望內層導體層是指在具有包夾於複數個絶緣層與該絶緣體層之適宜位置之內層導體層的多層構造基板中,加工者藉由將絶緣層穿孔而期望使其露出之內層導體層。 Here, the so-called desired inner layer conductor layer means that in a multilayer structure substrate having an inner layer conductor layer sandwiched between a plurality of insulating layers and the insulator layer, the processor desires to perforate the insulating layer. The inner conductor layer is exposed.

但,例如圖3所示,這些盲孔加工或埋頭孔加工中,由3層絶緣層所構成之多層化基板中,使期望內層導體層為第1內層導體層9,從第1絶緣層14側(以下稱為「表面側」,相反側之第3絶緣層16側稱為「背面側」。)到第1內層導體層9為止來進行埋頭孔加工之後,可用組裝於加工裝置之心軸前端的鑽頭,朝第1絶緣層14開孔,但此時,第1絶緣層14之厚度為50至100μm,並以進入至其第1絶緣層14內的形狀來形成第1內層導體層9,並由於其第1內層導體層9的厚度為12至25μm,因此必須從超越第1絶緣層14之位置到第1內層導體層9之厚度即未滿25μm之位置,來停止鑽頭之穿孔。且,導體層亦為了其安定之電性導通,需要盡可 能地使其殘存,故,已將第1絶緣層14穿孔之情形下,在適切之位置停止鑽頭之穿孔,來作為加工中鑽頭高度位置的檢測精度,會要求大致±2μm的檢測精度。 However, as shown in FIG. 3, in the blind hole processing or countersink processing, in the multilayer substrate including three insulating layers, the desired inner conductor layer is the first inner conductor layer 9, and the first insulation is used. The side of the layer 14 (hereinafter referred to as "surface side", and the side of the third insulating layer 16 on the opposite side is referred to as "back side"). After the countersink processing is performed up to the first inner conductor layer 9, it can be assembled to a processing apparatus. The drill at the tip end of the mandrel is opened toward the first insulating layer 14, but in this case, the thickness of the first insulating layer 14 is 50 to 100 μm, and the first inner layer 14 is formed into the first inner insulating layer 14 to form the first inner portion. Since the layer conductor layer 9 has a thickness of 12 to 25 μm, the thickness of the first inner conductor layer 9 must be from a position beyond the first insulating layer 14 to a thickness of the first inner conductor layer 9, that is, less than 25 μm. To stop the perforation of the drill bit. Moreover, the conductor layer is also electrically conductive for its stability, and needs to be completed. Since the first insulating layer 14 can be perforated, the perforation of the drill bit is stopped at the appropriate position, and the detection accuracy of the drill height position in the machining is required to be approximately ±2 μm.

故,作為檢測在其心軸鑽頭之穿孔位置來控制加工的裝置或是方法,以往,會考慮如以下之裝置。即作為第1裝置,例如在前述圖3記載之基板欲從表面側到第1內層導體層9為止進行埋頭孔加工時,安裝於台座上之多層化基板內,利用埋頭孔加工,從欲使其露出之第1內層導體層9將電極拉出並設置拉出電極的同時,將電源其中一極與基板加工裝置之心軸鑽頭(或是與其為一體之轉子)來連接之情形下,在電源之另一極設置探針,使其與前述拉出電極接觸,藉此鑽頭便會從表面側穿孔並到達第1內層導體層9,藉由鑽頭前端與第1內層導體層9接觸,電氣電路便會成為封閉電路,來自電源之電流會流動,藉此將其訊號化來控制鑽頭的旋轉。 Therefore, as an apparatus or method for detecting the processing of the punching position of the spindle bit, conventionally, the following apparatus will be considered. In the first embodiment, for example, when the substrate described in FIG. 3 is to be countersunk from the front side to the first inner conductor layer 9, the substrate is mounted on the pedestal in the multilayer substrate, and the countersink is used for processing. When the first inner conductor layer 9 is exposed, the electrode is pulled out and the electrode is pulled out, and one of the power sources is connected to the spindle bit of the substrate processing apparatus (or the rotor integrated therewith) a probe is disposed at the other end of the power source to be in contact with the pull-out electrode, whereby the drill bit is perforated from the surface side and reaches the first inner conductor layer 9, by the front end of the drill and the first inner conductor layer 9 contact, the electrical circuit will become a closed circuit, the current from the power supply will flow, thereby signalling it to control the rotation of the drill bit.

又進一步地,雖是相同地電性地檢測鑽頭與期望內層導體層之接觸者,但為了避免第1裝置之缺點即連接電源其中一極與基板加工裝置之心軸鑽頭(或是與其為一體之轉子)的困難度,作為第2裝置,如同以下,實用化了利用在安裝鑽頭之轉子與心軸本體之間有靜電容量存在的情況來施加高頻電流並檢測透過靜電容量之電流變化者。即,如圖4所記載,從高頻電源即高頻振盪器18經過同軸纜線19,將GDN線23與基板加工裝置B之筐體36連接的同時,輸出線24與變流器39之輸入捲線40其中一端連接,進而將 該輸入捲線40之另一端與心軸本體1連接。此時,心軸本體1對於筐體36用絶緣體37絶緣地來設置。在安裝鑽頭5之轉子3與心軸本體1之間會有一定之靜電容量p存在。又,變流器39之輸出捲線42會經由檢波電路21而與檢測器22連接。 Further, although the contact between the drill and the desired inner conductor layer is electrically detected in the same manner, in order to avoid the disadvantage of the first device, one of the poles of the power source and the spindle bit of the substrate processing apparatus are connected (or As a second device, as a second device, as follows, it is practical to apply a high-frequency current and detect a change in current through the electrostatic capacitance by the presence of an electrostatic capacitance between the rotor on which the drill is attached and the spindle body. By. That is, as shown in FIG. 4, the GDN line 23 is connected to the casing 36 of the substrate processing apparatus B via the coaxial cable 19 from the high-frequency power source 18, and the output line 24 and the converter 39 are connected. Input one end of the winding wire 40, and then The other end of the input winding 40 is connected to the spindle body 1. At this time, the mandrel main body 1 is provided to the casing 36 in insulation by the insulator 37. There is a certain electrostatic capacity p between the rotor 3 on which the drill 5 is mounted and the spindle body 1. Further, the output winding 42 of the current transformer 39 is connected to the detector 22 via the detector circuit 21.

另一方面,將圖3所記載之基板7當作檢測對象物,將第1內層導體層9當作期望內層導體層,並將該基板7固定於筐體36內之絶緣的加工台上的同時,使心軸a定位於前述檢測對象物基板7之上方的預定位置。除此之外,從高頻振盪器18施加1MHz之高頻電流並使鑽頭5旋轉的同時使心軸a下降,對基板7開始穿孔,當鑽頭5前端與第1內層導體層9即銅箔接觸時,從與輸入捲線40連接之心軸a,透過前述轉子3與心軸本體1之間的靜電容量p,朝轉子3、鑽頭5、第1內層導體層9會有電流流動,進而,透過第1內層導體層9與筐體36間之靜電容量r,朝筐體36有電流流動,並回到高頻振盪器18。且,利用該新產生之電流,在變流器39之鐵芯41有磁通產生,在輸出捲線42有新電流產生,並將其新產生電流經由檢波電路21,利用檢測器22來檢測,便可檢測鑽頭5將第1絶緣層14穿孔且其之前端已到達第1內層導體層9之情形。將其之檢測結果作為訊號朝控制部(未圖示)輸送,該控制部便會發出停止鑽頭5之旋轉等必要的指示。藉此,可判別固定於基板加工裝置B之加工台上之檢測對象物基板7之期望內層導體層即第1內層導體層9距離加工台的高度位置,為了正確地進行穿孔至基板之期望內層導體層即第1內層導體層9為止,從加工前之心軸a之起 初位置該下降多少距離,作為資訊來取得(該資訊稱為「下降距離資訊」。)。 On the other hand, the substrate 7 shown in FIG. 3 is used as a detection target, and the first inner conductor layer 9 is used as a desired inner conductor layer, and the substrate 7 is fixed to an insulating processing table in the casing 36. At the same time, the mandrel a is positioned at a predetermined position above the detection target substrate 7. In addition, a high-frequency current of 1 MHz is applied from the high-frequency oscillator 18 to rotate the drill 5, and the spindle a is lowered, and the substrate 7 is punctured, and the front end of the drill 5 and the first inner conductor layer 9 are copper. When the foil is in contact, the mandrel a connected to the input winding 40 passes through the electrostatic capacitance p between the rotor 3 and the spindle body 1, and current flows to the rotor 3, the drill 5, and the first inner conductor layer 9. Further, the electrostatic capacitance r between the first inner conductor layer 9 and the casing 36 flows through the casing 36, and returns to the high frequency oscillator 18. Further, with the newly generated current, magnetic flux is generated in the iron core 41 of the current transformer 39, a new current is generated in the output winding 42, and a newly generated current is passed through the detecting circuit 21, and is detected by the detector 22. It is possible to detect the case where the drill bit 5 perforates the first insulating layer 14 and the front end thereof has reached the first inner conductor layer 9. The detection result is transmitted as a signal to a control unit (not shown), and the control unit issues an instruction necessary to stop the rotation of the drill 5 or the like. Thereby, it is possible to determine the height position of the first inner conductor layer 9 which is the desired inner conductor layer of the detection target substrate 7 fixed on the processing table of the substrate processing apparatus B from the processing table, in order to accurately perforate the substrate. It is desirable that the inner conductor layer, that is, the first inner conductor layer 9, starts from the mandrel a before processing How much distance should be dropped from the initial position as information (this information is called "down distance information").

但,在藉由鑽頭5前端與第1內層導體層9單純地接觸,電氣電路會成為封閉電路,來自電源之電流會流動,藉此將此訊號化之前述第1裝置中,實際上會有必須在電源其中一極與基板加工裝置之心軸,需要形成將高速旋轉之鑽頭或是與其為一體之轉子連接而形成封閉電路之非常困難之構成的缺點。 However, when the tip end of the drill 5 is simply in contact with the first inner conductor layer 9, the electric circuit becomes a closed circuit, and a current from the power source flows, whereby the first device in the signal is actually formed. There is a disadvantage that it is necessary to form a mandrel of one of the power sources and the substrate processing apparatus, and it is necessary to form a very difficult configuration in which a high-speed rotating drill or a rotor integrated therewith is formed to form a closed circuit.

又,在使用前述第2高頻之裝置中,亦會有如以下之缺點。即,第1,必須將心軸本體從筐體電性地絶緣,但其之絶緣方法在構造上非常困難且高成本。第2,即使將心軸本體利用絶緣物來電性地從筐體絶緣,透過心軸內之馬達捲線等的電子零件,在心軸本體與筐體之間會有靜電容量t存在,即使心軸之鑽頭前端未與期望內層導體層接觸,透過該靜電容量t,會有電流流動,其之電流會成為用檢測器檢測電流時的外在影響因素,不易判定是否鑽頭前端與期望內層導體層有接觸,而使判定精度降低。第3,期望內層導體層即銅箔之面積本身較小時,其之期望內層導體層與筐體之間的靜電容量r亦較小,故,鑽頭5之前端與第1內層導體層9即銅箔接觸,因而新產生之電流亦較微弱,其之電流變化也會埋沒在外在影響因素中,即使欲在變流器39之輸出捲線42檢測新產生之電流,由於判定精度變低,因此必須依每一基板之種類來調整判定基準值,故,可說會有加工所需之時間會變長的缺點。第4,轉子有利用空氣軸承來 支持者,與用陶瓷軸承來支持者,但埋頭孔加工用或路由器加工用之心軸中,主要是使用陶瓷軸承。然而相對於陶瓷軸承之靜電容量(即,使用陶瓷軸承時之心軸本體與轉子之間的靜電容量)為約200pF,空氣軸承之靜電容量(即,使用空氣軸承時之心軸本體與轉子之間的靜電容量)為約1000pF,與使用了空氣軸承者相比,使用了陶瓷軸承時,本體與轉子間之靜電容量為大致5分之1,故,在利用透過心軸本體與轉子之間的靜電容量之電流變化的方式中,其之變化量非常少,不易判定變化之有無,便會使判定精度降低。第5,在基板加工時,相對於要求高精度,如前述第2至第4所記載,由於判定精度變低,因此例如相對於相同尺寸與構造之大量基板,施加相同之埋頭孔加工時,為了維持其之加工精度,必須依每一片來調整判定基準值,故,會有加工所需時間變長之缺點。第6,如前述第1所記載,必須將心軸本體從筐體絶緣,故,無法對心軸連接地線,心軸變成所謂的未接地金屬,故,為了確保安全性,必須個別的對應,而招致成本增加。 Further, in the apparatus using the second high frequency described above, there are also the following disadvantages. That is, first, the mandrel body must be electrically insulated from the casing, but the insulation method thereof is extremely difficult in construction and high in cost. Second, even if the mandrel main body is electrically insulated from the casing by the insulator, and the electronic component such as the motor winding wire in the mandrel is passed through, the electrostatic capacitance t exists between the mandrel main body and the casing, even if the mandrel is present. The front end of the drill bit is not in contact with the desired inner conductor layer. When the electrostatic capacitance t is transmitted, current flows, and the current thereof becomes an external influence factor when the current is detected by the detector. It is difficult to determine whether the front end of the drill bit and the desired inner conductor layer are There is contact, which reduces the accuracy of the judgment. Thirdly, when it is desired that the area of the inner conductor layer, that is, the copper foil itself is small, the electrostatic capacity r between the inner conductor layer and the casing is desired to be small, so that the front end of the drill 5 and the first inner conductor The layer 9 is the copper foil contact, so the newly generated current is also weak, and the current change thereof is buried in the external influence factor, even if the output current 42 of the converter 39 is to detect the newly generated current, the determination accuracy is changed. Since it is low, it is necessary to adjust the determination reference value depending on the type of each substrate. Therefore, it can be said that the time required for processing becomes long. Fourth, the rotor has to use air bearings to Supporters, with ceramic bearings to support, but in the mandrel for machining or router processing, mainly using ceramic bearings. However, compared with the electrostatic capacity of the ceramic bearing (that is, the electrostatic capacity between the spindle body and the rotor when the ceramic bearing is used) is about 200 pF, the electrostatic capacity of the air bearing (ie, the mandrel body and the rotor when the air bearing is used) The electrostatic capacitance between them is about 1000 pF. When a ceramic bearing is used, the electrostatic capacity between the main body and the rotor is approximately one-fifth, and therefore, between the main body and the rotor. In the method of changing the current of the electrostatic capacitance, the amount of change is very small, and it is difficult to determine the presence or absence of the change, and the determination accuracy is lowered. Fifthly, in the processing of the substrate, the high precision is required, and as described in the second to fourth embodiments, the determination accuracy is lowered. For example, when the same countersink processing is applied to a large number of substrates having the same size and structure, In order to maintain the machining accuracy, it is necessary to adjust the determination reference value for each piece, so that there is a disadvantage that the processing time becomes long. Sixth, as described in the first aspect, since the mandrel main body must be insulated from the casing, the mandrel cannot be connected to the ground wire, and the mandrel becomes a so-called ungrounded metal. Therefore, in order to ensure safety, individual correspondence is required. And incur increased costs.

先行技術文獻 Advanced technical literature 專利文獻 Patent literature

[專利文獻1]日本特開昭61-131804號公報 [Patent Document 1] Japanese Laid-Open Patent Publication No. 61-131804

[專利文獻2]日本特開平8-130379號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 8-130379

發明概要 Summary of invention

欲解決之課題是在使用習知之高頻交流裝置中,外在影響因素存在之情形下,檢測之電流變化的絶對量較少,故,無法獲得足夠之精度,又,故會有為了以高精度之加工而加工時間長時間化之問題點,並必須將心軸本體從筐體絶緣因而高成本之問題點。 The problem to be solved is that in the case of using a conventional high-frequency AC device, the absolute amount of current change detected is less in the presence of external influence factors, so that sufficient accuracy cannot be obtained, and therefore, there is a high The problem of processing with high precision and long processing time requires the problem that the mandrel body is insulated from the casing and thus has a high cost.

本申請發明是在基板加工時,對於相同尺寸與構造之大量基板施加相同之加工,故,將作為檢測對象之基板作為2片1組,並將其之1組內其中一方交互地作為比較對象物,在加工前,使變流器輸出捲線側不會有電流產生,其中一方之心軸鑽頭會下降並與期望導體層接觸,藉此從新基板到鑽頭、轉子會有電流流動,進而透過轉子與心軸本體間之靜電容量,轉子、心軸本體、筐體會有電流流動,藉此利用其之電流來檢測變流器輸出捲線側所產生的電流,並藉此來檢測鑽頭之下降距離者。故,在與從高頻交流電源透過變流器輸入捲線且與變成其之1組的各基板期望導體層連接時,會連接成使變流器之各輸入捲線電流在變流器所產生之磁通彼此抵銷。 In the invention of the present invention, the same processing is applied to a large number of substrates having the same size and structure during the processing of the substrate. Therefore, the substrate to be detected is made into two groups, and one of the groups is interactively used as a comparison object. Before the processing, there is no current generated on the output winding side of the converter, and one of the spindle drills will fall and contact with the desired conductor layer, thereby flowing current from the new substrate to the drill bit and the rotor, and then passing through the rotor. The electrostatic capacity between the main body and the main body of the mandrel, the rotor, the main body, and the casing have a current flowing, thereby using the current thereof to detect the current generated by the output winding side of the converter, and thereby detecting the falling distance of the drill bit. . Therefore, when it is connected to the desired conductor layer of each of the substrates which are input from the high-frequency AC power source through the converter and is connected to one of the groups, the input winding current of the converter is connected to the converter. The magnetic fluxes offset each other.

本申請發明是一種心軸下降距離資訊檢測機構,是將組裝有心軸之基板加工裝置之心軸鑽頭的下降距離加以檢測,並具有:高頻交流電源、捲數相同之2個輸入捲線、及具備1個以上輸出捲線之高頻用的變流器,並將檢測對象物基板、以及與該基板相同之比較對象物基板作為2片1組,個別獨立地從基板加工裝置之筐體絶緣,並在固定 於筐體內之加工台上的情形下,前述高頻交流電源輸出之其中一方與前述筐體連接,另一方透過前述變流器之2個輸入捲線,個別與存在於前述2片各基板內之期望導體層連接,而使各輸入捲線電流在前述變流器產生之磁通方向會彼此抵銷,且將由心軸鑽頭前端與檢測對象物基板之期望導體層的接觸所產生之電流的變化作為從變流器輸出之電流的變化利用檢測器來檢測而成。 The present invention is a mandrel drop distance information detecting mechanism that detects a falling distance of a spindle bit of a substrate processing apparatus in which a mandrel is assembled, and has two high-frequency AC power sources and two input winding wires having the same number of windings, and A high-frequency current transformer for one or more output coils is provided, and the object to be detected and the object to be compared with the same substrate are individually and independently insulated from the casing of the substrate processing apparatus. And fixed In the case of processing on the processing table in the casing, one of the high-frequency AC power supply outputs is connected to the casing, and the other is transmitted through the two input winding wires of the current transformer, and is present in each of the two substrates. It is desirable that the conductor layers are connected such that the respective input winding currents cancel each other in the direction of the magnetic flux generated by the current transformer, and the change in current generated by the contact between the front end of the spindle bit and the desired conductor layer of the object substrate is taken as The change in current output from the converter is detected using a detector.

藉此,在心軸之鑽頭與2片基板均無接觸之狀態下,朝2個輸入捲線流動且與基板及筐體之間的靜電容量成比例的電流會相同,故,由其之電流所產生之磁通會彼此抵銷,明顯地,在各基板之期望導體層與筐體間如同未有靜電容量產生,在變流器之輸出捲線不會有輸出電流產生,輸出捲線側之輸出變成“0”。然而,當心軸鑽頭與檢測對象物基板接觸時,藉由鑽頭接觸,朝其接觸之側的輸入捲線流動之電流會只增加固定有與鑽頭之轉子及心軸本體的靜電容量成比例的電流分量,故,朝2個輸入捲線流動之電流會變得不相同,由其之電流所產生之磁通亦因與其之電流不同分量便不會抵銷而殘存,故在輸出捲線會有輸出電流產生。將該輸出電流用檢測器來檢測,來判定與存在於鑽頭與基板之期望導體層的接觸。如上所述,可用“1”、“0”訊號來檢測其之接觸的有無,故,可精密且正確地並用低成本來測定接觸的有無,又,組裝該當心軸下降距離資訊檢測機構之後,在組裝有心軸的組裝基板加工裝置,亦可對於所謂基板之不均或鑽頭之消耗、溫度變化之鑽頭或 是期望導體層之膨脹或是收縮的大小的變化,正確地進行安定地盲孔加工或埋頭孔加工等,而該心軸是使用了固定心軸鑽頭之轉子與心軸本體間靜電容量較小陶瓷軸承者。 Therefore, in a state in which the drill of the mandrel and the two substrates are not in contact with each other, the current flowing toward the two input winding wires and proportional to the electrostatic capacitance between the substrate and the casing is the same, and therefore, the current is generated. The magnetic fluxes are offset from each other. Obviously, as there is no electrostatic capacity between the desired conductor layer and the casing of each substrate, no output current is generated at the output winding of the converter, and the output on the output winding side becomes " 0". However, when the spindle bit is in contact with the substrate to be inspected, the current flowing toward the input winding on the side of the contact by the drill bit only increases the current component fixed in proportion to the electrostatic capacity of the rotor and the spindle body of the drill. Therefore, the current flowing to the two input windings will become different, and the magnetic flux generated by the current will not be offset due to the different components of the current, so there will be an output current generated in the output winding. . The output current is detected by a detector to determine contact with a desired conductor layer present between the drill and the substrate. As described above, the presence or absence of the contact can be detected by the "1" or "0" signal. Therefore, the presence or absence of the contact can be measured accurately and accurately at low cost, and after assembling the mandrel drop distance information detecting mechanism, In the assembled substrate processing apparatus in which the mandrel is assembled, it is also possible for the so-called unevenness of the substrate or the consumption of the drill bit, the temperature change of the drill bit or It is desirable to change the size of the expansion or contraction of the conductor layer, and to perform the blind hole machining or the countersink processing correctly, and the mandrel is a small electrostatic capacitance between the rotor and the mandrel body using the fixed mandrel bit. Ceramic bearing.

又作為不同的構成,是一種心軸下降距離資訊檢測機構,是將組裝有心軸之基板加工裝置之心軸鑽頭的下降距離檢測,其具有:高頻交流電源、捲數相同之2個輸入捲線、將具備1個以上輸出捲線之高頻用的變流器、以及將配置成串聯之電容器與開關作為1組並將該電容器與開關並聯配置複數組而成的模擬基板電路,又,將檢測對象物基板從基板加工裝置之筐體絶緣,在固定於筐體內之加工台上的情形下,前述高頻交流電源輸出之其中一方與前述筐體連接,並與前述模擬基板電路其中一方端子連接,另一方透過前述變流器之2個輸入捲線,個別與存在於檢測對象物基板內之期望導體層、及前述模擬基板電路之另一方端子連接,且調整模擬基板電路之開關而使其與檢測對象物基板之期望導體層與筐體間所產生的靜電容量大致相等,藉此使各輸入捲線電流在前述變流器產生之磁通會彼此抵銷,且將由心軸鑽頭前端與期望之導體層的接觸而產生之電流的變化作為從變流器輸出之電流的變化利用檢測器來檢測而成。 Further, as a different configuration, the spindle falling distance information detecting means detects the falling distance of the spindle bit of the substrate processing apparatus in which the spindle is assembled, and has two high-frequency AC power sources and two input windings having the same number of windings. A high-frequency converter including one or more output windings, and a dummy substrate circuit in which a capacitor and a switch arranged in series are arranged in a group and the capacitor and the switch are arranged in parallel, and the detection is performed. The object substrate is insulated from the casing of the substrate processing apparatus, and when it is fixed to the processing table in the casing, one of the high-frequency AC power supply outputs is connected to the casing, and is connected to one of the terminals of the analog substrate circuit. The other side is connected to the desired conductor layer existing in the substrate to be detected and the other terminal of the analog substrate circuit through the two input winding wires of the current transformer, and the switch of the analog substrate circuit is adjusted to be The electrostatic capacitance generated between the desired conductor layer of the object substrate and the casing is substantially equal, thereby making each input winding current The magnetic fluxes generated by the current transformers are offset from each other, and the change in current generated by the contact of the front end of the spindle bit with the desired conductor layer is detected by a detector as a change in current output from the converter.

藉此,將事前在筐體與檢測對象物基板之期望導體層間所產生的靜電容量加以測定,操作模擬基板電路之開關並使其變成與其之靜電容量大致相同,藉此可將比較對象物基板用該模擬基板電路來代替,為了檢測心軸鑽頭 之下降距離資訊,可只將該當檢測對象物基板固定於筐體內之加工台上為目的之加工正確地進行,便可以更短時間進行對大量基板之加工。 Thereby, the electrostatic capacitance generated between the casing and the desired conductor layer of the substrate to be inspected is measured beforehand, and the switch of the analog substrate circuit is operated to have substantially the same electrostatic capacitance as that, whereby the object to be compared can be used. Use this analog substrate circuit instead, in order to detect the spindle bit The descending distance information can be accurately processed only for the purpose of fixing the substrate to be inspected to the processing table in the casing, so that processing of a large number of substrates can be performed in a shorter time.

進而,此為組裝有設置了這些任一個心軸下降距離資訊檢測機構之心軸的基板加工裝置,並為設有根據由該心軸下降距離資訊檢測機構所檢測之下降距離資訊來控制心軸之動作的機構而成者。 Further, this is a substrate processing apparatus in which a mandrel provided with any one of the mandrel descent distance information detecting means is incorporated, and the mandrel is controlled in accordance with the falling distance information detected by the mandrel descent distance information detecting means. The body of the action is the body.

根據由該當下降距離資訊檢測機構所檢測之資訊來控制心軸之動作,藉此可短時間且正確地進行對大量基板之加工作業。 The operation of the mandrel is controlled based on the information detected by the falling distance information detecting means, whereby the processing of a large number of substrates can be performed in a short time and accurately.

本申請發明之心軸下降距離資訊檢測機構是一種有以下優秀效果者,其可用“1”、“0”訊號來檢測其之接觸的有無,故,如同由陶瓷軸承來支持轉子之心軸,即使為轉子與心軸本體間之靜電容量較小的心軸,亦可正確地檢測是否鑽頭前端與期望導體層有接觸,又,可排除外在影響因素,故,可高精度地確實檢測其之接觸的有無。故,即使對於基板之不均或鑽頭之消耗、溫度變化之鑽頭或是期望導體層之膨張或收縮的大小的變化,亦可安定且正確地進行盲孔加工或埋頭孔加工等。又,是一種具有以下優秀效果者,其根據由該檢測機構所檢測之下降距離資訊,藉由控制心軸之動作,利用鑽頭將絶緣層正確地穿孔,便可使期望導體層表面確實地露出,不會將期望導體層不必要地削除,便不會損及該當基板本身之性能,進而,亦無 須使心軸本體對筐體絶緣,也不用花費用於絶緣之多餘的成本,又,亦可使心軸本體接地,亦無損及安全性。 The mandrel descent distance information detecting mechanism of the invention of the present application is one of the following excellent effects, and the "1" and "0" signals can be used to detect the presence or absence of the contact thereof, so that the mandrel of the rotor is supported by a ceramic bearing, Even if the mandrel with a small electrostatic capacitance between the rotor and the main body of the mandrel can correctly detect whether the tip end of the drill bit is in contact with the desired conductor layer, and the external influence factor can be eliminated, the high-precision detection can be surely performed. The presence or absence of contact. Therefore, blind hole processing, countersink processing, and the like can be performed stably and correctly even for variations in the substrate, the consumption of the drill bit, the change in temperature, or the change in the size of the expansion or contraction of the desired conductor layer. Further, it is an excellent effect that the surface of the desired conductor layer can be surely exposed by the operation of the mandrel by controlling the movement of the mandrel and accurately piercing the insulating layer by the drill bit, based on the falling distance information detected by the detecting means. , the desired conductor layer will not be unnecessarily removed, and the performance of the substrate itself will not be damaged, and thus, The mandrel body must be insulated from the casing, and the unnecessary cost for insulation is not required. Moreover, the mandrel body can be grounded, and it is also non-destructive and safe.

進而,請求項1記載之發明中,是一種具有以下優秀效果者,其將相同尺寸與構造之基板作為2片1組,將其中一方作為另一方的比較對象物來使用,故,即使變更檢測對象物基板的種類,其之變更後亦可同樣地將相同尺寸與構造之基板作為2片1組,將其中一方作為另一方的比較對象物來使用,故,不需依每次其之變更來調整判定是否鑽頭前端對期望導體層有接觸的判定基準值,以此點亦可縮短加工時間,便可減低加工成本。 Further, in the invention described in the first aspect, the substrate having the same size and structure is used as one of two sets, and one of the substrates is used as the other comparative object. Therefore, even if the detection is changed, In the same manner, after changing the type of the target substrate, the substrate having the same size and structure can be used as one of the two substrates, and one of them can be used as the other comparative object. Therefore, it is not necessary to change the substrate. The determination reference value for judging whether or not the tip of the drill bit is in contact with the desired conductor layer is adjusted, and the processing time can be shortened, thereby reducing the processing cost.

又,組裝有設置該當心軸下降距離資訊檢測機構之心軸的基板加工裝置,是具有以下優秀效果者,其利用由心軸下降距離資訊檢測機構所檢測之心軸下降距離資訊來控制心軸的動作,故,在對大量相同之基板施加相同加工時,在短時間可正確加工。 Further, the substrate processing apparatus provided with the mandrel of the mandrel drop distance information detecting means is equipped with the following excellent effects, and the mandrel descent distance information detected by the mandrel descent distance information detecting means is used to control the mandrel. Therefore, when the same processing is applied to a large number of identical substrates, it can be processed correctly in a short time.

1、2‧‧‧心軸本體 1, 2‧‧‧ spindle body

3、4‧‧‧轉子 3, 4‧‧‧ rotor

5、6‧‧‧鑽頭 5, 6‧‧‧ drill bit

7、8‧‧‧基板 7, 8‧‧‧ substrate

9、10‧‧‧第1內層導體層 9, 10‧‧‧1st inner conductor layer

11‧‧‧第2內層導體層 11‧‧‧2nd inner conductor layer

12‧‧‧表面導體層 12‧‧‧ surface conductor layer

13‧‧‧背面導體層 13‧‧‧back conductor layer

14‧‧‧第1絶緣層 14‧‧‧1st insulation layer

15‧‧‧第2絶緣層 15‧‧‧2nd insulation layer

16‧‧‧第3絶緣層 16‧‧‧3rd insulation layer

17‧‧‧檢測裝置 17‧‧‧Detection device

18‧‧‧高頻振盪器 18‧‧‧High Frequency Oscillator

19‧‧‧同軸纜線 19‧‧‧ coaxial cable

20‧‧‧變流器 20‧‧‧Converter

21‧‧‧檢波電路 21‧‧‧Detection circuit

22‧‧‧檢測器 22‧‧‧Detector

23‧‧‧GND線 23‧‧‧ GND line

24‧‧‧輸出線 24‧‧‧Output line

25‧‧‧第1輸入捲線 25‧‧‧1st input winding

26‧‧‧第2輸入捲線 26‧‧‧2nd input winding

27‧‧‧鐵芯 27‧‧‧ iron core

28‧‧‧輸出捲線 28‧‧‧ Output winding

29‧‧‧模擬基板電路 29‧‧‧Simulated substrate circuit

30‧‧‧檢測裝置 30‧‧‧Detection device

31‧‧‧指撥開關 31‧‧‧Dip switch

32‧‧‧電容器 32‧‧‧ capacitor

33‧‧‧端子 33‧‧‧ terminals

34‧‧‧端子 34‧‧‧ terminals

35‧‧‧切換開關 35‧‧‧Toggle switch

36‧‧‧筐體 36‧‧‧Shell

37‧‧‧絶緣體 37‧‧‧Insulator

38‧‧‧檢測裝置 38‧‧‧Detection device

39‧‧‧變流器 39‧‧‧Converter

40‧‧‧輸入捲線 40‧‧‧Input winding

41‧‧‧鐵芯 41‧‧‧ iron core

42‧‧‧輸出捲線 42‧‧‧ Output winding

t‧‧‧靜電容量 t‧‧‧Electrostatic capacity

A、A’‧‧‧基板加工裝置 A, A'‧‧‧ substrate processing equipment

B‧‧‧基板加工裝置 B‧‧‧Substrate processing equipment

a、b‧‧‧心軸 a, b‧‧‧ mandrel

K.1‧‧‧下降距離資訊檢測機構 K. 1‧‧‧Drop distance information testing agency

K.2‧‧‧下降距離資訊檢測機構 K. 2‧‧‧Drop distance information testing agency

p、q、r、s‧‧‧靜電容量 P, q, r, s‧‧‧ electrostatic capacity

[圖1]是顯示心軸下降距離資訊檢測機構之構成的示意圖。(實施例1) Fig. 1 is a schematic view showing the configuration of a mandrel drop distance information detecting mechanism. (Example 1)

[圖2]是顯示不同心軸下降距離資訊檢測機構之構成的示意圖。(實施例2) Fig. 2 is a schematic view showing the configuration of a different mandrel falling distance information detecting mechanism. (Example 2)

[圖3]是顯示檢測對象物基板之構造的示意圖。 FIG. 3 is a schematic view showing a structure of a substrate to be detected.

[圖4]是習知例之示意圖。 FIG. 4 is a schematic view of a conventional example.

此為可用低成本來提升檢測精度之目的者,其是 藉由將相同之基板作為2片1組來使用,並在從高頻交流電源之輸出側透過變流器之輸入捲線與成為其1組的各基板之期望導體層連接時,連接成使變流器之各輸入捲線電流在變流器所產生之磁通方向會彼此抵銷而實現者。即,此為在比較對象物基板亦有相同之外在影響因素存在,故,不會有因其之兩者的差異而產生之變流器輸出捲線側的輸出電流,並藉由鑽頭前端與期望導體層接觸,朝檢測對象物基板有剩餘之電流流動,因其之剩餘的電流,變流器之各輸入捲線電流在變流器所產生之磁通方向無法完全抵銷,而在變流器之輸出捲線側有輸出電流產生,並將此用檢測器來檢測,藉此檢測對象物基板中,來判定鑽頭前端與期望導體層有接觸,並檢測其之位置或距離者。 This is the purpose of improving the detection accuracy with low cost, which is When the same substrate is used as two sets, and the input winding wire that passes through the converter from the output side of the high-frequency AC power source is connected to a desired conductor layer of each of the substrates of the group, the connection is changed. The input winding current of the flow device is achieved by canceling the direction of the magnetic flux generated by the converter. In other words, this is because there is an influencing factor in the comparison object substrate, so there is no output current on the output side of the converter due to the difference between the two, and the front end of the drill is It is desirable that the conductor layer is in contact, and a residual current flows toward the substrate of the detection object. Due to the remaining current, the input winding current of the converter cannot be completely offset in the direction of the magnetic flux generated by the converter, but is in the variable current. An output current is generated on the output winding side of the device, and this is detected by the detector, thereby detecting the object substrate to determine the contact between the tip end of the drill and the desired conductor layer, and detecting the position or distance thereof.

又,為了即使只有用1片基板亦可正確地檢測心軸之下降距離資訊,會是取代將相同之基板作為2片1組時之比較對象物基板,而使用了模擬基板電路者。 In addition, in order to accurately detect the falling distance information of the mandrel even with one substrate, the analog substrate circuit is used instead of the same substrate as the two substrates in the same substrate.

進而,為了可對相同大量基板短時間且確實地施加加工,在組裝有心軸之基板加工裝置,會設有根據這些之心軸之下降距離資訊檢測機構、與其之已檢測的下降距離資訊來控制心軸之動作的機構。 Further, in order to apply the processing to the same large number of substrates for a short period of time, the substrate processing apparatus incorporating the mandrel is provided with the falling distance information detecting means based on the mandrel and the detected falling distance information. The mechanism of the movement of the mandrel.

[實施例1] [Example 1]

圖1是顯示本申請發明之第1實施例的示意圖。a是心軸,最初設於檢測對象物基板7之側,並由在心軸本體1與該心軸本體1利用陶瓷軸承來支持的轉子3、及支持於該轉子3之埋頭孔加工用的鑽頭5所構成,b是相同之心軸,最 初設於比較對象物基板8之側,並由在心軸本體2利用陶瓷軸承來支持的轉子4、及支持於該轉子4之埋頭孔加工用的鑽頭6所構成。A是利用該當心軸a、b來進行埋頭孔加工等之基板加工裝置。且,本申請發明之心軸下降距離資訊檢測機構K.1是由後述2片1組之基板7、8、與2台心軸a、b及檢測裝置17,以及將這些利用線路連接的電氣電路所構成。又,本實施例中,顯示了心軸a、b為2隻之情形,但使各基板7、8交互地作為檢測對象物與比較對象物,藉此針對兩基板7、8,個別檢測下降距離資訊。又,通常,1台加工裝置設有2之倍數的心軸,故,此時可將本實施例之心軸下降距離資訊檢測機構K.1以心軸2台為1組來1個1個地設置。然而,前述兩心軸a、b雖未圖示,但相對於基板加工裝置A之筐體36,會構造成使其與水平方向(紙面横向)之X軸方向來連動,又,可與垂直方向之Z軸方向個別地驅動。另一方面,與向後方向之Y軸方向,藉由加工台驅動,固定於此之基板7、8便會連動。又,心軸a、b會個別電性地與筐體36變為導通狀態。然而,前述兩心軸a、b之各轉子3、4個別在心軸本體1、2利用陶瓷軸承來支持,故,各心軸本體1、2與各轉子3、4間便會絶緣。但,在各心軸本體1、2與各轉子3、4間個別有靜電容量p、q存在,故,可說是高頻地導通(又,圖1中為了顯示靜電容量p、q之存在,用虛線來記載而使各心軸本體1、2與各轉子3、4間透過電容器來連接,但該記載只是單純示意地表示在各心軸本體1、2與各轉子3、4間有靜電容量p、q存在所記載者,實際上並 非有任何連接或元件存在。透過此外之虛線所記載之電容器的連接亦為相同趣旨。)。另一方面,各心軸a、b中,各轉子3、4與各鑽頭5、6間個別是導通的。 Fig. 1 is a schematic view showing a first embodiment of the invention of the present application. a is a mandrel, and is provided on the side of the object substrate 7 to be detected, and is composed of a rotor 3 supported by a mandrel main body 1 and the mandrel body 1 by a ceramic bearing, and a drill bit for supporting the countersink hole of the rotor 3. 5 is composed, b is the same mandrel, most It is initially provided on the side of the comparison object substrate 8, and is composed of a rotor 4 supported by a ceramic bearing in the spindle main body 2, and a drill 6 for supporting countersinking of the rotor 4. A is a substrate processing apparatus that performs countersink processing or the like using the mandrel axes a and b. Moreover, the mandrel drop distance information detecting mechanism of the invention of the present application K. 1 is composed of two sets of substrates 7 and 8 which are described later, two sets of spindles a and b, and a detecting device 17, and an electric circuit that connects these lines. Further, in the present embodiment, the case where the mandrels a and b are two is displayed. However, the substrates 7 and 8 are alternately used as the object to be detected and the object to be compared, whereby the respective substrates 7 and 8 are individually detected and lowered. Distance information. Moreover, usually, one processing device is provided with a mandrel of a multiple of two, so at this time, the mandrel of the present embodiment can be lowered by the distance detecting mechanism K. 1 Set one set of the mandrel to one set. However, although the two mandrels a and b are not shown, they are configured to be interlocked with the casing 36 of the substrate processing apparatus A in the X-axis direction of the horizontal direction (the horizontal direction of the paper). The direction of the Z-axis is driven individually. On the other hand, in the Y-axis direction in the backward direction, the substrates 7 and 8 fixed thereto are driven by the processing table. Further, the mandrels a and b are electrically connected to the casing 36 individually. However, the rotors 3 and 4 of the two mandrels a and b are individually supported by the mandrel bodies 1 and 2 by ceramic bearings, so that the mandrels 1 and 2 and the rotors 3 and 4 are insulated from each other. However, since the electrostatic capacitances p and q exist between the respective mandrels 1 and 2 and the respective rotors 3 and 4, it can be said that the capacitances are high-frequency (also, in order to show the existence of electrostatic capacitances p and q in Fig. 1) The mandrel main bodies 1 and 2 are connected to the respective rotors 3 and 4 through a capacitor by a broken line, but the description is simply shown schematically between the respective mandrel bodies 1 and 2 and the rotors 3 and 4. The electrostatic capacitances p and q exist in the description, and actually There are no connections or components present. The connection of the capacitors described by the dashed lines is also the same. ). On the other hand, in each of the mandrels a and b, the respective rotors 3 and 4 and the respective drills 5 and 6 are electrically connected to each other.

然而,檢測對象物即基板7對於前述筐體36之地面電性地絶緣,如前所述,固定於在Y軸方向驅動之加工台(未圖示)上,又比較對象物基板8亦對於相同筐體36之地面,固定於電性地絶緣之加工台上,兩基板7、8之間亦為絶緣。兩基板7、8是具有如後述之相同構造以及大小之多層構造的基板,基板加工裝置A之Z軸方向(高度方向)與X軸方向(紙面横向)位於相同位置,固定於加工台上而使其可相對於Y軸方向(紙面往後之方向)連動且移動。又,如圖3所示,兩基板7、8之內部構造會變成多層構造,並由變成3層之絶緣層14、15、16與表面及背面導體層12、13、以及包夾於第1絶緣層14與第2絶緣層15之間之一部分的第1內層導體層9、10、以及包夾於第2絶緣層15與第3絶緣層16之間之一部分的第2內層導體層11來構成。導體層9、10、11、12、13均為銅箔,其之厚度為12至25μm。又,各絶緣層14、15、16是熱可塑性樹脂製,個別之厚度為50至100μm。又,在本實施例中,目的在於:用心軸a來穿孔至第1內層導體層9的表面為止,並檢測為了使第1內層導體層9之表面露出所需之心軸a的下降距離資訊,故,第1內層導體層9為期望內層導體層,在圖1與圖2以及圖4中,各基板7、8之內部構造會省略,並作為其之期望導體層,只大概記載了成為導通對象之第1內層導體層9、10。且,在各基板7、8之第1內 層導體層9、10與筐體36之間個別有靜電容量r、s存在。 However, the substrate 7 to be detected is electrically insulated from the ground of the casing 36, and is fixed to a processing table (not shown) that is driven in the Y-axis direction as described above, and the object substrate 8 is also compared. The ground of the same casing 36 is fixed to the electrically insulated processing table, and the two substrates 7 and 8 are also insulated. The two substrates 7 and 8 are substrates having a multilayer structure having the same structure and size as described later, and the Z-axis direction (height direction) of the substrate processing apparatus A is located at the same position as the X-axis direction (paper surface lateral direction), and is fixed to the processing table. It can be linked and moved with respect to the Y-axis direction (the direction in which the paper faces backward). Further, as shown in FIG. 3, the internal structures of the two substrates 7, 8 become a multilayer structure, and the insulating layers 14, 15, 16 which are three layers and the surface and back conductor layers 12, 13, and the first one are sandwiched. The first inner conductor layers 9 and 10 between the insulating layer 14 and the second insulating layer 15 and the second inner conductor layer sandwiching between the second insulating layer 15 and the third insulating layer 16 11 to form. The conductor layers 9, 10, 11, 12, 13 are all copper foils having a thickness of 12 to 25 μm. Further, each of the insulating layers 14, 15, 16 is made of a thermoplastic resin, and the individual thickness is 50 to 100 μm. Further, in the present embodiment, it is an object to perforate the surface of the first inner conductor layer 9 by the mandrel a, and detect the drop of the mandrel a required to expose the surface of the first inner conductor layer 9. Since the first inner conductor layer 9 is a desired inner conductor layer, in FIGS. 1 and 2 and 4, the internal structures of the substrates 7 and 8 are omitted, and as a desired conductor layer, only The first inner conductor layers 9, 10 to be turned on are roughly described. And within the first of each of the substrates 7, 8 The electrostatic capacitances r and s exist individually between the layer conductor layers 9, 10 and the casing 36.

另一方面,17為檢測裝置,是由高頻振盪器18、同軸纜線19、變流器20、檢波電路21及檢測器22所構成,高頻振盪器17會輸出大致0.5至2MHz之高頻的交流電,其輸出之高頻的交流電會經過同軸纜線19,其之GND線23與筐體36連接,另一方之輸出線24則與變流器20之2個同捲數的輸入捲線、即彼此連接有各一端之第1輸入捲線25與第2輸入捲線26的中間來連接。兩輸入捲線25、26從指示成m之側朝右繞來捲繞相同捲數,當第1輸入捲線25捲完時,就與第2輸入捲線26之捲線開頭連接,並在此連接前述輸出線24。且,第1輸入捲線25之捲線開頭的端部會與檢測對象物基板7的期望導體層即第1內層導體層9來連接,又,第2輸入捲線26之捲線終點的端部會與比較對象物基板8的第1內層導體層10來連接。變流器20之2個輸入捲線25、26為相同捲數之情形下,輸出線24會與其之2個輸入捲線25、26之中間來連接,故,各輸入捲線25、26會成為相反捲繞之相同捲數的線圈,而在變流器20之鐵芯27產生的磁通方向會彼此抵銷,在輸出捲線28側就不會有電流產生。且,變流器20之輸出捲線28兩端會與4個二極體所構成之檢波電路21連接,又該檢波電路21與檢測器22連接。 On the other hand, 17 is a detecting device composed of a high frequency oscillator 18, a coaxial cable 19, a converter 20, a detecting circuit 21, and a detector 22, and the high frequency oscillator 17 outputs a height of approximately 0.5 to 2 MHz. The alternating current of the frequency, the high frequency alternating current of the output passes through the coaxial cable 19, the GND line 23 of which is connected to the casing 36, and the other output line 24 and the input winding of the same number of coils of the converter 20 That is, the first input winding 25 and the second input winding 26, which are connected to each other, are connected to each other. The two input winding wires 25, 26 are wound to the right from the side indicated by m, and the same number of windings are wound. When the first input winding 25 is wound up, the first input winding 25 is connected to the beginning of the winding of the second input winding 26, and the above output is connected thereto. Line 24. Further, the end portion of the first winding wire 25 at the beginning of the winding wire is connected to the first inner conductor layer 9 which is a desired conductor layer of the detection target substrate 7, and the end portion of the winding end point of the second input winding wire 26 is The first inner conductor layer 10 of the object substrate 8 is compared and connected. In the case where the two input windings 25, 26 of the converter 20 are of the same number of windings, the output line 24 is connected to the middle of the two input windings 25, 26, so that the input windings 25, 26 become opposite volumes. The coils of the same number of windings are wound, and the magnetic flux directions generated by the iron cores 27 of the current transformers 20 cancel each other, and no current is generated on the output winding 28 side. Further, both ends of the output winding 28 of the converter 20 are connected to the detector circuit 21 composed of four diodes, and the detector circuit 21 is connected to the detector 22.

如上所述,構成心軸下降距離資訊檢測機構K.1,故,檢測對象物即基板7與比較對象物即基板8為相同構造、相同形狀及大小之情形下,個別獨立並從筐體36絶緣且固定於相同高度之加工台上,故,當從高頻振盪器18會 有1MHz之高頻的交流流動時,在其中一方,與高頻振盪器18、同軸纜線19、輸出線24、第1輸入捲線25、基板7之第1內層導體層9連接的同時,會從輸出線24分開,並與第2輸入捲線26、基板8之第1內層導體層10連接,又,另一方會與高頻振盪器18、同軸纜線19、GND線23、筐體36來連接。又,在各基板7、8之期望導體層即第1內層導體層9、10與筐體36之間個別存在之靜電容量r、s會與各第1內層導體層9、10之面積及各第1內層導體層9、10與筐體36之距離相等,故,一般而言,會是大約100至2000pF之間的值,且變成相同的值。故,兩心軸a、b之任一者的鑽頭5、6在個別不與各基板7、8之第1內層導體層9、10接觸的狀態下,朝第1輸入捲線25,與第1輸入捲線25及筐體36之間之靜電容量r成比例的電流會流動,又,朝第2輸入捲線26,與第2輸入捲線26及筐體36之間之靜電容量s成比例之電流會流動,但其雙方之靜電容量r、s為相等之情形下,第1輸入捲線25與第2輸入捲線26之捲數為相同且彼此朝相反方向捲繞,故,變流器20之鐵芯27所產生之交替磁通會抵銷,在變流器20之輸出捲線28不會有輸出電流產生,檢測器22便不會檢測到電流。 As described above, the mandrel falling distance information detecting mechanism K. 1. When the substrate 7 to be detected and the substrate 8 to be compared are the same structure and the same shape and size, they are individually insulated from the casing 36 and fixed on the processing table of the same height. From the high frequency oscillator 18 will When there is a high-frequency alternating current of 1 MHz, one of them is connected to the high-frequency oscillator 18, the coaxial cable 19, the output line 24, the first input winding 25, and the first inner conductor layer 9 of the substrate 7, It is separated from the output line 24, and is connected to the second input winding 26 and the first inner conductor layer 10 of the substrate 8, and the other is connected to the high frequency oscillator 18, the coaxial cable 19, the GND line 23, and the housing. 36 to connect. Further, the electrostatic capacitances r and s which are present between the first inner conductor layers 9, 10 and the casing 36, which are desired conductor layers of the respective substrates 7, 8 and the area of each of the first inner conductor layers 9, 10 Since the distance between each of the first inner conductor layers 9, 10 and the casing 36 is equal, it is generally a value between about 100 and 2000 pF and becomes the same value. Therefore, the drills 5 and 6 of either of the two mandrels a and b are in contact with the first inner conductor layers 9 and 10 of the respective substrates 7 and 8 and are directed to the first input winding 25 and A current proportional to the capacitance r between the input winding 25 and the casing 36 flows, and a current proportional to the electrostatic capacitance s between the second input winding 26 and the casing 36 is applied to the second input winding 26. When the electrostatic capacitances r and s of the both sides are equal, the number of windings of the first input winding 25 and the second input winding 26 is the same and is wound in the opposite direction, so that the iron of the converter 20 The alternating magnetic flux generated by the core 27 is offset, and no output current is generated at the output winding 28 of the converter 20, and the detector 22 does not detect the current.

因此作為步驟1,將心軸a、b個別設置於相同平面上而使從心軸a之鑽頭5前端到檢測對象物基板7為止的距離、與從心軸b之鑽頭6前端到比較對象物基板8為止的距離會相等的情形下,使心軸a動作,其之鑽頭5從基板7之表面側穿孔至期望導體層即第1內層導體層9為止,當與第1內 層導體層9接觸時,不只是第1內層導體層9與筐體36間之靜電容量r,會形成新的電路,而該電路為經高頻振盪器18、同軸纜線19、輸出線24、第1輸入捲線25、基板7之第1內層導體層9、鑽頭5、轉子3、轉子3與存在於心軸本體1間的靜電容量p、心軸本體1、筐體36、GND線23、同軸纜線19、並回到高頻振盪器18者(又,一般而言絶緣之轉子3與心軸本體1間之靜電容量p為大約100至400pF。),並根據其之靜電容量p,來增加流動之電流。故,流動於第1輸入捲線25的電流會增加,個別流動於第1輸入捲線25與第2輸入捲線26的電流會有差異產生,由兩輸入捲線25、26所產生的磁通便無法抵銷。其結果,在變流器20之輸出捲線28有輸出電流產生,並用檢測器22來檢測檢波電路21所整流其輸出電流者。在檢測器22,設定成當來自檢波電路21之輸出電流超過一定之設定值時,便會輸出作為檢測訊號之訊號。 Therefore, in the first step, the mandrels a and b are individually provided on the same plane, and the distance from the tip end of the drill 5 of the spindle a to the detection target substrate 7 and the tip of the drill 6 from the spindle b to the comparison object are obtained. When the distances from the substrate 8 are equal, the mandrel a is operated, and the drill 5 is perforated from the surface side of the substrate 7 to the first inner conductor layer 9 which is a desired conductor layer, and the first inner conductor layer 9 When the layer conductor layer 9 is in contact, not only the electrostatic capacitance r between the first inner conductor layer 9 and the casing 36, but a new circuit is formed, and the circuit is a high frequency oscillator 18, a coaxial cable 19, and an output line. 24. The first input winding 25, the first inner conductor layer 9 of the substrate 7, the drill 5, the rotor 3, the rotor 3, and the electrostatic capacitance p existing between the spindle body 1, the spindle body 1, the housing 36, and the GND The wire 23, the coaxial cable 19, and the return to the high frequency oscillator 18 (again, generally, the electrostatic capacitance p between the insulated rotor 3 and the spindle body 1 is about 100 to 400 pF.), and according to the static electricity thereof Capacity p to increase the current flowing. Therefore, the current flowing through the first input winding 25 increases, and the current flowing between the first input winding 25 and the second input winding 26 differs, and the magnetic flux generated by the two input windings 25 and 26 cannot be offset. pin. As a result, an output current is generated at the output winding 28 of the converter 20, and the detector 22 is used to detect the output current rectified by the detector circuit 21. The detector 22 is set to output a signal as a detection signal when the output current from the detector circuit 21 exceeds a certain set value.

心軸a之加工作業開始前的起初位置、與檢測對象物基板7所固定的加工台高度會在事前設定成固定的位置,利用加工來檢測心軸a之鑽頭5與期望導體層即第1內層導體層9已接觸,藉此,測定從該當台之表面到其之基板7之第1內層導體層9的位置為止的高度(以下,稱為「期望導體層高度」。),並判明從加工此之心軸a的起初位置到其基板7之第1內層導體層9為止的下降距離,便可使其記憶於基板加工裝置A的控制部。 The initial position before the start of the machining operation of the spindle a and the height of the machining table fixed to the detection target substrate 7 are set to a fixed position beforehand, and the drill 5 and the desired conductor layer which are the spindles a are detected by machining. The inner conductor layer 9 is in contact with each other, whereby the height from the surface of the stage to the position of the first inner conductor layer 9 of the substrate 7 (hereinafter referred to as "the desired conductor layer height") is measured. It is found that the falling distance from the initial position at which the mandrel a is processed to the first inner conductor layer 9 of the substrate 7 can be stored in the control portion of the substrate processing apparatus A.

接著,作為步驟2,將步驟1中為檢測對象物基板7作為比較對象物,相反地將步驟1中為比較對象物基板8作 為檢測對象物,與步驟1相同地,這次使心軸b動作,並進行與使前述心軸a動作時之相同的操作,藉此來檢測到檢測對象物基板8的第1內層導體層10位置為止的高度,並判別從加工此之心軸b的起初位置到其基板8之第1內層導體層10為止的下降距離,便可使其記憶於基板加工裝置A的控制部。 Next, in step 2, the object to be detected 7 in step 1 is used as a comparison object, and conversely, the object to be compared 8 in step 1 is made. In the same manner as in step 1, the mandrel b is operated this time, and the same operation as when the mandrel a is operated is performed, thereby detecting the first inner conductor layer of the object substrate 8 to be detected. The height from the 10th position is determined by the falling distance from the initial position of the mandrel b to the first inner conductor layer 10 of the substrate 8, so that it can be stored in the control unit of the substrate processing apparatus A.

接著,作為步驟3,利用前述所記憶之資訊來控制心軸a、b之各個下降距離,並利用心軸a、b之鑽頭5、6來將基板穿孔加工之後,便可正確且迅速地使期望導體層露出。 Next, as step 3, the respective falling distances of the mandrels a and b are controlled by the information stored in the above, and the substrates 5, 6 of the mandrels a and b are used to punch the substrate, and then the holes can be accurately and quickly It is desirable that the conductor layer be exposed.

又,更實際地,在1片基板本身或是其之期望導體層易會有微妙的扭曲或歪斜存在,故,會對1片檢測對象物基板7(及8)個別進行數處同樣的檢測,測定在各檢測處之期望導體層的高度,並以其平均值來當作其期望導體層的高度,又,認定為心軸a、b之下降距離,並可將其之下降距離資訊記憶於加工裝置A的控制部,來控制心軸a、b之鑽頭5、6之基板的穿孔加工。 Further, more practically, the substrate itself or the desired conductor layer thereof is liable to be slightly distorted or skewed, so that the same detection is performed on a single object substrate 7 (and 8). , determining the height of the desired conductor layer at each detection point, and taking the average value as the height of the desired conductor layer, and determining the falling distance of the mandrels a and b, and dropping the distance information memory The punching process of the substrates of the drills 5 and 6 of the spindles a and b is controlled by the control unit of the processing apparatus A.

如上所述,使相同之基板為2片1組來使用之情形下,藉由對其之2片基板7、8施加之高頻的交流,在具有2個輸入捲線25、26之變流器20產生的磁通方向便會互相抵銷,故,轉子3(或4)與心軸本體1(或2)之靜電容量p(或q)以外的外在影響因素就可全部解除,便可將心軸a之鑽頭5與期望導體層之接觸的有無(或心軸b之鑽頭6與期望導體層之接觸的有無),並非用電流變化,而根據轉子3(或4)與心 軸本體1(或2)間之靜電容量p(或q),且利用是否有電流流動之“1”或是“0”的訊號來檢測,轉子如同在心軸本體由陶瓷軸承來支持之埋頭孔加工或路由器加工用之心軸,即使是其靜電容量較小之心軸時,亦可容易地判定。進而,無須將心軸1、2從筐體36完全地電性地絶緣,亦可將心軸1、2接地,便可使安全性提升。 As described above, in the case where the same substrate is used in two sets, the high-frequency alternating current applied to the two substrates 7, 8 is used in the converter having two input windings 25, 26. 20 The magnetic flux directions generated are offset each other, so that the external influence factors other than the electrostatic capacity p (or q) of the rotor 3 (or 4) and the spindle body 1 (or 2) can be completely removed. The presence or absence of contact between the drill bit 5 of the mandrel a and the desired conductor layer (or the presence or absence of contact of the drill bit 6 of the mandrel b with the desired conductor layer) does not vary with current, but according to the rotor 3 (or 4) and the heart The electrostatic capacity p (or q) between the shaft bodies 1 (or 2), and detected by whether there is a signal of "1" or "0" of current flow, the rotor is like a countersunk hole supported by a ceramic bearing in the spindle body The mandrel for processing or router processing can be easily judged even when it is a mandrel with a small electrostatic capacitance. Further, it is not necessary to completely electrically insulate the mandrels 1 and 2 from the casing 36, and the mandrels 1 and 2 can be grounded to improve safety.

又,在心軸a、b之基板7、8的加工時,可獲得心軸a、b之正確的下降距離資訊,故,根據該當下降距離資訊,就可將與該當基板7及8相同之大量基板正確地加工,作為結果,便可用低成本來加工。 Further, when the substrates 7 and 8 of the mandrels a and b are processed, the correct falling distance information of the mandrels a and b can be obtained, so that the same amount as the substrates 7 and 8 can be obtained based on the falling distance information. The substrate is processed correctly, and as a result, it can be processed at low cost.

[實施例2] [Embodiment 2]

圖2所示之K.2是顯示針對心軸之下降距離資訊檢測機構之其他實施例者,實施例1相對於使基板2片、心軸2台、檢測裝置1台作為1組並使檢測對象物基板7、8之期望導體層的位置如步驟1、步驟2錯開時間來檢測者,會殘留其之構成、特徴,並防止因錯開時間所產生且在加工相同的大量基板時所產生加工速度降低等的情形。該當實施例2中,是將檢測對象物基板1片、心軸1台、檢測裝置1台作為1組,並取代成為檢測對象物基板7之比較對象物基板8,而將模擬基板電路29組裝於檢測裝置30者。即,模擬基板電路29將8個電容器32與8個指撥開關31個別配置成串聯,並將配成串聯之電容器32與指撥開關31作為1組,且這8組為並聯地配置。這些電容器32個別為不同容量,在此個別使用了10pF、22pF、48pF、100pF、220pF、470pF、1000pF、 2200pF之容量者。且從高頻振盪器18,朝同軸纜線19、輸出線24、第1輸入捲線25、檢測對象物即基板7之第1內層導體層9來連接的同時,由前述輸出線24開始從第2輸入捲線26與前述模擬基板電路29之端子33連接。進而,根據需要為了能與前述實施例1相同地使用,在從第2輸入捲線26到模擬基板電路29之連接途中分岐,而使其朝比較對象物即基板8之第1內層導體層10連接。又從高頻振盪器18,在朝同軸纜線19、GND線23、筐體36繼續連接的GND線23途中分岐,來與前述模擬基板電路29之其他端子34連接。 Figure 2 shows K. 2 is another embodiment in which the falling distance information detecting means for the mandrel is displayed. In the first embodiment, two sets of the substrate, the number of the mandrels, and one of the detecting devices are set as one set, and the object substrates 7 and 8 are detected. It is desirable that the position of the conductor layer is detected by the steps 1 and 2, and the composition and characteristics of the conductor layer are left, and the occurrence of the processing speed due to the shifting time and the processing of the same large number of substrates is prevented. In the second embodiment, one object of the detection target substrate, one mandrel, and one detection device are one set, and the analog substrate circuit 29 is assembled instead of the comparison target substrate 8 to be the detection target substrate 7. For the detection device 30. That is, the analog substrate circuit 29 individually arranges the eight capacitors 32 and the eight finger switches 31 in series, and sets the capacitors 32 and the finger switches 31 arranged in series as one set, and these eight sets are arranged in parallel. These capacitors 32 are individually of different capacities, and 10pF, 22pF, 48pF, 100pF, 220pF, 470pF, 1000pF, respectively, are used here. 2200pF capacity. The high-frequency oscillator 18 is connected to the coaxial cable 19, the output line 24, the first input winding 25, and the first inner conductor layer 9 of the substrate 7 as the detection target, and the output line 24 starts from the output line 24. The second input winding 26 is connected to the terminal 33 of the analog substrate circuit 29. Further, in order to be used in the same manner as in the first embodiment, it is branched in the middle of the connection from the second input winding 26 to the dummy substrate circuit 29, and is made to face the first inner conductor layer 10 of the substrate 8 which is a comparative object. connection. Further, the high-frequency oscillator 18 is branched in the middle of the GND line 23 that continues to be connected to the coaxial cable 19, the GND line 23, and the casing 36, and is connected to the other terminal 34 of the analog board circuit 29.

如此一來,事前,可將在固定檢測對象物即基板7於基板加工裝置A’之加工台上的狀態下之基板7期望導體層即第1內層導體層9與筐體36間的靜電容量r加以檢測完成,並使模擬基板電路29之8個指撥開關31為適宜通電狀態而使其變成與此大致相同之靜電容量。其結果,在模擬基板電路29產生之靜電容量會成為比較對象物基板8的代替物,與實施例1之情形相同地,當使心軸a動作並其之鑽頭5接觸於檢測對象物基板7的第1內層導體層9時,就透過其之已動作之心軸a的心軸本體1與轉子3間的靜電容量p而會有電流流動,故,在變流器20內之兩輸入捲線25、26產生的磁通便不會彼此抵銷,在輸出捲線28側就有磁通產生且電流產生,故,用檢測器22檢測其電流的存在,藉此判明心軸a之鑽頭5與基板7之期望導體層即第1內層導體層9有接觸。又根據該接觸資訊之後續處理則與實施例1情形相同。 In this case, the static electricity between the first inner conductor layer 9 and the casing 36, which is the desired conductor layer of the substrate 7 in a state where the substrate 7 to be detected is placed on the processing table of the substrate processing apparatus A', can be used. The detection of the capacity r is completed, and the eight finger switches 31 of the analog substrate circuit 29 are appropriately energized to have substantially the same electrostatic capacitance. As a result, the electrostatic capacitance generated in the dummy substrate circuit 29 becomes a substitute for the comparison target substrate 8. As in the case of the first embodiment, when the spindle a is operated and the drill 5 is in contact with the detection target substrate 7, When the first inner conductor layer 9 is passed, a current flows through the electrostatic capacitance p between the mandrel main body 1 and the rotor 3 of the mandrel a which has been operated, so that two inputs are made in the converter 20. The magnetic fluxes generated by the winding wires 25, 26 are not offset each other, and magnetic flux is generated on the side of the output winding 28, and a current is generated. Therefore, the presence of the current is detected by the detector 22, thereby identifying the drill bit 5 of the mandrel a. It is in contact with the first inner conductor layer 9 which is a desired conductor layer of the substrate 7. Further, the subsequent processing based on the contact information is the same as in the case of the first embodiment.

又,該實施例2中,使模擬基板電路29之8個指撥開關 31全部為OFF之情形下,將比較對象物基板8固定於加工台上,將第2輸入捲線26與該基板8之期望導體層即第1內層導體層10連接之後,亦可作為實施例1之檢測裝置來使用。 Moreover, in the second embodiment, eight dip switches of the analog substrate circuit 29 are made. When all 31 are OFF, the comparison target substrate 8 is fixed to the processing stage, and the second input winding 26 is connected to the first inner conductor layer 10 which is a desired conductor layer of the substrate 8, and may be an embodiment. The detection device of 1 is used.

將實施例2所示之下降距離資訊檢測機構K.2裝備2組之後,如實施例1,不會遵循如步驟1、步驟2之順序,而是可同時地獲得2片基板之下降距離資訊,便可提升加工速度。但,很明顯地,實施例2中,與實施例1不同,基板之種類改變,配合加工對象物之基板與筐體間的靜電容量,必須改變模擬基板電路29之8個指撥開關31的設定。 The falling distance information detecting mechanism shown in Embodiment 2 is K. 2 After the two groups are equipped, as in the first embodiment, the steps of the steps 1 and 2 are not followed, but the falling distance information of the two substrates can be simultaneously obtained, and the processing speed can be improved. However, in the second embodiment, unlike the first embodiment, the type of the substrate is changed, and the electrostatic capacitance between the substrate and the casing of the object to be processed is changed, and the setting of the eight dip switches 31 of the analog substrate circuit 29 must be changed. .

又,無須贅言,不只是內層導體層,為了檢測到表面或是背面導體層為止之心軸下降距離資訊,均可使用實施例1與2。 Further, it is needless to say that not only the inner conductor layer but also the mandrel fall distance information for detecting the surface or the back conductor layer can be used in Examples 1 and 2.

產業上之可利用性 Industrial availability

由於此為藉由施加高頻交流電流,來檢測與靜電容量相等者之其中一方所產生的電流變化,來判定2個導體物之接觸的有無者,因此不只是心軸鑽頭之基板加工,亦可廣泛地適用於在機械裝置之加工時,判定有無導體物之接觸的用途。 Therefore, by applying a high-frequency alternating current to detect a change in current generated by one of the electrostatic capacitances, it is determined whether or not the contact between the two conductors is present, and therefore, not only the substrate processing of the spindle bit but also It can be widely applied to the purpose of determining the presence or absence of contact of a conductor during processing of a mechanical device.

1、2‧‧‧心軸本體 1, 2‧‧‧ spindle body

3、4‧‧‧轉子 3, 4‧‧‧ rotor

5、6‧‧‧鑽頭 5, 6‧‧‧ drill bit

7、8‧‧‧基板 7, 8‧‧‧ substrate

9、10‧‧‧第1內層導體層 9, 10‧‧‧1st inner conductor layer

17‧‧‧檢測裝置 17‧‧‧Detection device

18‧‧‧高頻振盪器 18‧‧‧High Frequency Oscillator

19‧‧‧同軸纜線 19‧‧‧ coaxial cable

20‧‧‧變流器 20‧‧‧Converter

21‧‧‧檢波電路 21‧‧‧Detection circuit

22‧‧‧檢測器 22‧‧‧Detector

23‧‧‧GND線 23‧‧‧ GND line

24‧‧‧輸出線 24‧‧‧Output line

25‧‧‧第1輸入捲線 25‧‧‧1st input winding

26‧‧‧第2輸入捲線 26‧‧‧2nd input winding

27‧‧‧鐵芯 27‧‧‧ iron core

28‧‧‧輸出捲線 28‧‧‧ Output winding

36‧‧‧筐體 36‧‧‧Shell

Claims (3)

一種心軸下降距離資訊檢測機構,是將組裝有心軸之基板加工裝置之心軸鑽頭的下降距離加以檢測,其具有:高頻交流電源、捲數相同之2個輸入捲線、及具備1個以上輸出捲線之高頻用的變流器,並將檢測對象物基板、以及與該基板相同之比較對象物基板作為2片1組,個別獨立地從基板加工裝置之筐體絶緣,並在固定於筐體內之加工台上的情形下,前述高頻交流電源輸出之其中一方與前述筐體連接,另一方透過前述變流器之2個輸入捲線,個別與存在於前述2片各基板內之期望導體層連接,而使各輸入捲線電流在前述變流器產生之磁通方向會彼此抵銷,且將由心軸鑽頭前端與檢測對象物基板之期望導體層的接觸所產生之電流的變化作為從變流器輸出之電流的變化利用檢測器來檢測而成。 A mandrel drop distance information detecting mechanism detects a falling distance of a spindle bit of a substrate processing apparatus in which a mandrel is assembled, and has two high-frequency AC power sources and two input winding wires having the same number of windings, and one or more A high-frequency current transformer for the winding wire is outputted, and the object substrate to be detected and the object to be compared with the same substrate are separately formed as two sheets, and are individually insulated from the casing of the substrate processing apparatus and fixed to the substrate. In the case of the processing table in the casing, one of the high-frequency AC power supply outputs is connected to the casing, and the other is transmitted through the two input winding wires of the current transformer, and is individually required to exist in each of the two substrates. The conductor layers are connected such that the respective input winding currents cancel each other in the direction of the magnetic flux generated by the current transformer, and the change in current generated by the contact between the front end of the spindle bit and the desired conductor layer of the object substrate is taken as The change in current output from the converter is detected using a detector. 一種心軸下降距離資訊檢測機構,是將組裝有心軸之基板加工裝置之心軸鑽頭的下降距離檢測,其具有:高頻交流電源、捲數相同之2個輸入捲線、將具備1個以上輸出捲線之高頻用的變流器、以及將配置成串聯之電容器與開關作為1組並將該電容器與開關並聯配置複數組而成的模擬基板電路,又,將檢測對象物基板從基板加工裝置之筐體絶緣,在固定於筐體內之加工台上的情形下,前述高頻交流電源輸出之其中一方與前述筐體連接,並與前述模擬基板電路其中一方端子連接,另一方 透過前述變流器之2個輸入捲線,個別與存在於檢測對象物基板內之期望導體層、及前述模擬基板電路之另一方端子連接,且調整模擬基板電路之開關而使其與檢測對象物基板之期望導體層與筐體間所產生的靜電容量大致相等,藉此使各輸入捲線電流在前述變流器產生之磁通會彼此抵銷,且將由心軸鑽頭前端與期望之導體層的接觸而產生之電流的變化作為從變流器輸出之電流的變化利用檢測器來檢測而成。 A mandrel descent distance information detecting means for detecting a falling distance of a spindle bit of a substrate processing apparatus incorporating a mandrel, comprising: a high-frequency AC power supply and two input windings having the same number of windings, and having one or more outputs A high-frequency current transformer for winding a wire, and a dummy substrate circuit in which a capacitor and a switch arranged in series are arranged in a group and the capacitor and the switch are arranged in parallel, and the object substrate to be detected is processed from the substrate processing device. The casing is insulated, and when the casing is fixed to the processing table, one of the high-frequency AC power supply outputs is connected to the casing, and is connected to one of the terminals of the analog substrate circuit, and the other is connected The two input winding wires of the current transformer are individually connected to a desired conductor layer existing in the substrate to be detected and the other terminal of the analog substrate circuit, and the switch of the analog substrate circuit is adjusted to be detected with the object to be detected. The electrostatic capacitance generated between the desired conductor layer of the substrate and the housing is substantially equal, whereby the magnetic flux generated by each of the input winding currents in the current transformer is offset from each other and is provided by the front end of the spindle bit and the desired conductor layer. The change in the current generated by the contact is detected by a detector as a change in the current output from the converter. 一種組裝有心軸之基板加工裝置,其具有請求項1或2之心軸下降距離資訊檢測機構,且設置有根據由該心軸下降距離資訊檢測機構所檢測之下降距離資訊來控制心軸之動作的機構而成。 A substrate processing apparatus equipped with a mandrel, comprising the mandrel falling distance information detecting mechanism of claim 1 or 2, and being provided with the action of controlling the mandrel according to the falling distance information detected by the mandrel descent distance information detecting mechanism The body is made.
TW102147742A 2013-05-25 2013-12-23 Spindle descending distance information detection mechanism and assembly of mandrel down distance information detection mechanism of the substrate processing device TWI522023B (en)

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JP6425138B2 (en) * 2015-05-28 2018-11-21 大船企業日本株式会社 Substrate processing apparatus incorporating a spindle descent distance information detection mechanism and a spindle descent distance information detection mechanism
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