TW201841241A - Semiconductor substrate treatment method and treatment device - Google Patents
Semiconductor substrate treatment method and treatment device Download PDFInfo
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- TW201841241A TW201841241A TW107101936A TW107101936A TW201841241A TW 201841241 A TW201841241 A TW 201841241A TW 107101936 A TW107101936 A TW 107101936A TW 107101936 A TW107101936 A TW 107101936A TW 201841241 A TW201841241 A TW 201841241A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
本發明係關於將一面側形成有多數之積體電路晶片的半導體基板之另一面側加以切削時,形成保護一面側的保護膜之技術領域。The present invention relates to a technical field of forming a protective film for protecting one surface side when a semiconductor substrate having a plurality of integrated circuit wafers formed on one surface side is cut.
在積體電路晶片的製造中,於半導體晶圓例如矽晶圓上進行成膜、圖案遮罩形成、蝕刻等處理,而形成有縱橫排列的多數之積體電路。並且將用於保護積體電路晶片之保護貼帶貼附於半導體晶圓(以下稱「晶圓」)的正面側之後,對於晶圓之背面側進行磨削(研削、研磨)縮小晶圓的厚度,並於晶圓之背面側貼附例如切割貼帶或裸晶接合薄膜並藉由例如切割鋸來分離成各個積體電路晶片。In the manufacture of integrated circuit wafers, processes such as film formation, pattern mask formation, and etching are performed on a semiconductor wafer, such as a silicon wafer, to form a large number of integrated circuits arranged in a vertical and horizontal direction. Then, a protective tape for protecting the integrated circuit wafer is attached to the front side of the semiconductor wafer (hereinafter referred to as "wafer"), and then the back side of the wafer is ground (grinded, polished) to reduce the size of the wafer. Thickness, and attach, for example, a dicing tape or a die bonding film on the back side of the wafer and separate it into individual integrated circuit wafers by, for example, a dicing saw.
就自晶圓將積體電路晶片加以分離的手法而言,有在進行磨削之前進行自晶圓的正面側沿著切割線而先劃下切痕的所謂半切斷之手法,於將晶圓貼附至切割貼帶之後進行所謂的全切斷之手法,或者於晶圓的內部形成裂口的隱形切割等等。在任何一種手法中,均於將晶圓貼附至切割貼帶之前自晶圓剝下保護貼帶。As a method of separating the integrated circuit wafer from the wafer, there is a so-called semi-cutting method in which a cut is made along the cutting line from the front side of the wafer before grinding, and the wafer is pasted. After attaching to the dicing tape, a so-called full-cut method, or invisible dicing that forms a crack inside the wafer, etc. In either method, the protective tape is peeled from the wafer before the wafer is attached to the dicing tape.
然而將保護貼帶貼附至晶圓的手法有如下的問題。 在進行磨削時,保護貼帶會夾入於平台與晶圓之間,但於積體電路晶片含有凸塊時,若微觀性地觀察,則保護貼帶會在凸塊所存在的部位膨起。因此保護貼帶的表面將會波動,該表面形狀會轉印至磨削後的晶圓之背面,就結果而言,積體電路晶片的厚度尺寸產生偏差。再者,於晶圓的外周部,保護貼帶與晶圓之間產生間隙,研磨液自該間隙侵入而汙染積體電路晶片,並由於晶圓外周部產生間隙而於研削中使得保護貼帶飄動,成為積體電路晶片裂開的要因。更有甚者,於晶圓的外周部,保護貼帶之表面產生凹凸時,無法於磨削時將晶圓確實地吸附於具有真空吸爪的晶圓固持台。However, the method of attaching a protective tape to a wafer has the following problems. When grinding, the protective tape will be sandwiched between the platform and the wafer, but when the integrated circuit wafer contains bumps, if the microscopic observation is made, the protective tape will swell in the place where the bumps exist. Up. Therefore, the surface of the protective tape will fluctuate, and the shape of the surface will be transferred to the back surface of the wafer after grinding. As a result, the thickness dimension of the integrated circuit wafer will vary. In addition, a gap is generated between the protective tape and the wafer at the outer periphery of the wafer, and the polishing liquid penetrates through the gap to contaminate the integrated circuit wafer, and the gap is generated during the outer periphery of the wafer, so that the protective tape is made during the grinding. The flutter becomes the main cause of the crack of the integrated circuit chip. What's more, when the surface of the protective tape is uneven on the outer periphery of the wafer, the wafer cannot be reliably adsorbed on the wafer holding table having a vacuum claw during grinding.
又,即使於積體電路晶片不存在有凸塊,若保護貼帶的貼附精度不佳時,晶圓之背面與保護貼帶的表面之間的平行度不佳,積體電路晶片之厚度產生偏差。更有甚者,於要求將半導體層即矽部分相當地薄化的積體電路晶片之情形,若欲進行利用隱形切割或者半切斷所為之切割,則有以下疑慮:於磨削時,保護貼帶所形成的積體電路晶片之黏接力無法充分承受自磨床接受的橫向力,使得積體電路晶片位置偏離而於角落部發生龜裂。 並且,保護貼帶之剝離作業係自動進行,但為了避免黏下凸塊、貼帶膠的殘渣殘留於積體電路晶片,無法迅速地進行剝離,因此成為積體電路晶片之製造程序中無法獲得高產量的要因。又,於保護貼帶之剝離作業中,不易確實地避免黏下凸塊、貼帶膠的殘渣殘留於積體電路晶片。In addition, even if there are no bumps on the integrated circuit wafer, if the attachment accuracy of the protective tape is not good, the parallelism between the back surface of the wafer and the surface of the protective tape is not good, and the thickness of the integrated circuit wafer is not good. Deviation. What's more, in the case of an integrated circuit wafer that requires a semiconductor layer, that is, a silicon portion, to be considerably thinned, if it is to be cut by stealth cutting or semi-cutting, there are the following concerns: when grinding, the protective film The adhesive force of the integrated circuit chip formed by the belt cannot sufficiently withstand the lateral force received from the grinder, which causes the position of the integrated circuit chip to deviate and cracks at the corners. In addition, the peeling operation of the protective tape is performed automatically. However, in order to avoid the sticking of the bumps and the residue of the adhesive tape on the integrated circuit wafer, the peeling cannot be performed quickly. Therefore, it cannot be obtained in the manufacturing process of the integrated circuit wafer. Causes of high production. In addition, in the peeling operation of the protective tape, it is not easy to reliably prevent the sticking of the bumps and the residue of the adhesive tape from remaining on the integrated circuit chip.
專利文獻1中,雖記載有一種技術,將紫外線照射至保護貼帶來降低黏著性,其後自晶圓剝離保護貼帶,但用於存在有凸塊的晶圓時,會有保護貼帶之平坦性降低的課題。專利文獻2記載有在自單晶棒製造晶圓的程序中,因為切片後的晶圓之表面波動,所以於研削晶圓之表面前,於晶圓之表面塗佈硬化樹脂,將樹脂之表面壓接至平坦的板,並使硬化的樹脂之表面成為平坦面(基準面)。專利文獻2的技術,與本發明在製造程序的階段上不同,又,使樹脂之表面平坦化之目的亦不同。 [先行技術文獻] [專利文獻]Patent Document 1 describes a technique for irradiating ultraviolet rays to a protective tape to reduce adhesion, and thereafter peeling the protective tape from a wafer. However, when used for a wafer having bumps, a protective tape is provided. The problem of reduced flatness. Patent Document 2 describes that in the process of manufacturing a wafer from a single crystal rod, the surface of the wafer after slicing fluctuates. Before grinding the surface of the wafer, a hardened resin is applied to the surface of the wafer, and the surface of the resin is coated. It is crimped to a flat plate, and the surface of the hardened resin becomes a flat surface (reference surface). The technique of Patent Document 2 is different from the present invention in the stage of the manufacturing process, and the purpose of flattening the surface of the resin is also different. [Leading technical literature] [Patent literature]
專利文獻1:日本特開2015-157931號公報(請求項8,段落0027) 專利文獻2:日本特開2006-269761號公報(段落0006)Patent Document 1: Japanese Patent Laid-Open No. 2015-157931 (request item 8, paragraph 0027) Patent Document 2: Japanese Patent Laid-open No. 2006-269761 (para. 0006)
[發明所欲解決之問題][Problems to be solved by the invention]
本發明有鑒於此種情形而成,目的在於提供一種技術,其能於將形成有積體電路晶片的半導體基板之背面側(另一面側)之厚度加以縮小的程序之前於正面側(一面側)形成保護膜時,達到保護膜的平坦化。 [解決問題之技術手段]The present invention has been made in view of this situation, and an object thereof is to provide a technology capable of reducing the thickness of the back surface side (the other surface side) of a semiconductor substrate on which an integrated circuit wafer is formed on the front surface side (the one surface side). ) When the protective film is formed, the protective film is flattened. [Technical means to solve problems]
本發明之特徵在於包含以下程序: 塗佈程序,將保護膜用的硬化劑塗佈於一面側形成有多數之積體電路晶片的半導體基板的該一面側; 平坦化程序,其次使前述硬化劑之表面平坦化; 保護膜形成程序,將能量供給至前述硬化劑使該硬化劑硬化,形成硬化劑層即保護膜; 厚度縮小程序,其後切削前述半導體基板的另一面側,縮小厚度; 黏接程序,其後於前述半導體基板的另一面側黏接切割用的固持體;以及 移除程序,其次自半導體基板移除前述保護膜。The present invention is characterized by including the following procedures: a coating procedure for applying a curing agent for a protective film to the one surface side of a semiconductor substrate having a plurality of integrated circuit wafers formed on one surface side; a planarization procedure, and then the aforementioned curing agent The surface is flattened; a protective film forming process supplies energy to the hardener to harden the hardener to form a hardener layer, that is, a protective film; a thickness reduction process, after which the other side of the semiconductor substrate is cut to reduce the thickness; Followed by a bonding process, followed by bonding a holder for dicing to the other surface side of the semiconductor substrate; and a removal process, followed by removing the protective film from the semiconductor substrate.
又,本發明係一種裝置,其將一面側形成有多數之積體電路晶片的半導體基板加以處理,其特徵在於包含: 塗佈部,用以將保護膜用的硬化劑塗佈於前述半導體基板的一面側; 平坦化處理部,用以使前述塗佈部塗佈的前述硬化劑之表面平坦化; 硬化處理部,用以將能量供給至前述硬化劑使該硬化劑硬化,形成硬化劑層即保護膜; 保護膜除去部,用以自形成有前述保護膜且再切削其另一面側縮小厚度,其後於該另一面側黏接有切割用的固持體之半導體基板的一面側,移除該保護膜;以及 搬運機構,用以於前述塗佈部、平坦化處理部、硬化處理部、保護膜除去部之間搬運半導體基板。 [發明之功效]The present invention is a device for processing a semiconductor substrate having a plurality of integrated circuit wafers formed on one surface side, and the device includes a coating unit for coating a hardener for a protective film on the semiconductor substrate. One side of the surface; a flattening processing section for flattening the surface of the hardening agent applied by the coating section; a hardening processing section for supplying energy to the hardening agent to harden the hardening agent to form a hardening agent layer That is, a protective film; a protective film removing section is used to reduce the thickness of the protective film formed from the aforementioned protective film and then cut the other surface side, and then the one surface side of the semiconductor substrate to which the holder for cutting is adhered on the other surface side, The protective film is removed; and a transport mechanism is used to transport the semiconductor substrate between the coating section, the planarizing section, the hardening section, and the protective film removing section. [Effect of invention]
本發明於形成有積體電路晶片的半導體基板之一面側塗佈硬化劑,利用第1能量使硬化劑硬化而形成硬化劑層即保護膜。因此能於硬化劑的硬化前平坦化。所以,於後續程序切削半導體基板之另一面側縮小厚度時,該另一面側變得平坦,抑制積體電路晶片的厚度偏差。In the present invention, a hardener is applied to one side of a semiconductor substrate on which an integrated circuit wafer is formed, and the hardener is hardened by using a first energy to form a protective film that is a hardener layer. Therefore, it can be flattened before the hardener is hardened. Therefore, when the thickness of the other surface of the semiconductor substrate is reduced after the subsequent process, the other surface becomes flat, and the thickness deviation of the integrated circuit wafer is suppressed.
[發明內容] 詳細說明本發明的半導體基板之處理裝置所實施的實施形態之前,先參照顯示主要程序的圖1~圖3說明本發明之半導體基板之處理方法的一例之概要。 首先將如圖1(a)所示將剝離用的硬化劑11塗佈於一面側(正面側)形成有積體電路晶片(未圖示)的半導體基板例如矽基板即晶圓(半導體晶圓)W的一面側,並將例如紫外線(UV)照射至此硬化劑11使硬化劑11硬化(圖1(b))。其次將保護膜用的硬化劑12塗佈於晶圓W的一面側亦即硬化劑11之上(圖1(c)),再將不附著於推壓構件例如後述石英玻璃的脫模劑13塗佈於保護膜用的硬化劑12之上(圖1(d))。使硬化劑11、12硬化,藉以形成硬化劑層,為了將說明簡樸化,係定為在硬化前及硬化後任一狀態中均稱為硬化劑,又元件符號亦定為同一符號。[Summary of the Invention] Before describing in detail the embodiments implemented by the semiconductor substrate processing apparatus of the present invention, an outline of an example of a processing method of the semiconductor substrate of the present invention will be described with reference to FIGS. 1 to 3 showing main procedures. First, as shown in FIG. 1 (a), a hardening agent 11 for peeling is applied to a semiconductor substrate such as a silicon substrate (semiconductor wafer) on which one surface side (front side) is formed with an integrated circuit wafer (not shown). ) The hardener 11 is hardened by irradiating ultraviolet light (UV) to the hardener 11 (see FIG. 1 (b)). Next, the hardener 12 for the protective film is coated on the one side of the wafer W, that is, the hardener 11 (FIG. 1 (c)), and the mold release agent 13 that does not adhere to the pressing member such as quartz glass described later is then applied. It is apply | coated on the hardening | curing agent 12 for protective films (FIG.1 (d)). The hardeners 11 and 12 are hardened to form a hardener layer. In order to simplify the description, it is assumed that the hardener is called the hardener before and after hardening, and the symbol of the element is also the same.
而後,如圖2(e)所示藉由例如石英玻璃所構成的板狀之推壓構件14推壓硬化劑12的表面使該表面平坦化,其次自推壓構件14的上方朝向保護膜用的硬化劑12照射例如紫外線。紫外線穿透推壓構件14而到達保護膜用的硬化劑12,使硬化劑12硬化。紫外線照射開始時序可係與藉由推壓構件14推壓硬化劑12的表面之時點同時,亦可係比推壓構件14推壓硬化劑的表面之時點提前,只要係硬化劑12會硬化,而非推壓構件14的推壓無法有效的時序即可。其次移除推壓構件14之後,使晶圓W翻轉(圖2(f)),磨削(研削、研磨)晶圓W的另一面側(背面側)縮小晶圓W的厚度(詳細而言為矽部分的厚度)(圖2(g))。Then, as shown in FIG. 2 (e), the surface of the hardener 12 is pressed by a plate-shaped pressing member 14 made of, for example, quartz glass to flatten the surface, and then the protective film is directed from above the pressing member 14 to the protective film. The hardener 12 is irradiated with, for example, ultraviolet rays. The ultraviolet rays penetrate the pressing member 14 to reach the hardener 12 for the protective film, and harden the hardener 12. The ultraviolet irradiation start timing may be at the same time as the time when the surface of the hardener 12 is pressed by the pressing member 14, or may be earlier than the time when the surface of the hardener is pressed by the pressing member 14 as long as the hardener 12 is hardened, It is sufficient that the pressing of the non-pressing member 14 is not effective. Next, after the pressing member 14 is removed, the wafer W is reversed (FIG. 2 (f)), and the other side (rear surface) of the wafer W is ground (grinded, polished) to reduce the thickness of the wafer W (more specifically, Is the thickness of the silicon portion) (Figure 2 (g)).
其次如圖3(h)所示使晶圓W翻轉,將晶圓W的另一面側貼附至已貼附在尺寸比晶圓W更大的環狀之框架21的一面側的固持體即切割貼帶22。其後,將雷射光照射至剝離用的硬化劑11使該硬化劑11變質,於此變質時產生氣體使得該硬化劑11與晶圓W的一面之間的密著性消失,成為硬化劑11自晶圓W的一面浮起之狀態。因此將例如自由昇降的臂藉由真空吸爪吸附於保護膜用的硬化劑12的表面,並藉由拉起該臂而自晶圓W的一面側移除硬化劑11、12。圖3(i)示意性地顯示其模樣。 再以清洗液清洗晶圓W的表面並乾燥之後,如圖3(j)所示藉由裁斷機構即例如切割刀23沿著切割線分斷晶圓W,並藉由取出機構自切割貼帶22取下含有分斷之各積體電路晶片的裸晶10a。Next, as shown in FIG. 3 (h), the wafer W is turned over, and the other side of the wafer W is attached to a holder that has been attached to the one side of the ring-shaped frame 21 having a larger size than the wafer W.切 贴 带 22。 Cutting tape 22. Thereafter, the hardening agent 11 for peeling is irradiated with laser light, and the hardening agent 11 is deteriorated, and gas is generated during the deterioration, so that the adhesion between the hardening agent 11 and one side of the wafer W disappears, and the hardening agent 11 becomes a hardening agent 11. A state where the wafer W is floating. Therefore, for example, a freely lifting arm is adsorbed on the surface of the hardener 12 for the protective film by a vacuum suction claw, and the hardeners 11 and 12 are removed from one surface side of the wafer W by pulling up the arm. Fig. 3 (i) schematically shows the appearance. After cleaning the surface of the wafer W with a cleaning solution and drying it, as shown in FIG. 3 (j), the wafer W is divided along the cutting line by a cutting mechanism, for example, the cutting blade 23, and the tape is self-cut by the removal mechanism. 22 Remove the bare die 10a containing each of the integrated circuit wafers that have been broken.
補充說明以上程序。剝離用的硬化劑11包含以下材料:藉由添加能量而硬化的材料,例如既述由於紫外線而硬化的材料;藉由添加與前述能量不同的能量而產生氣體的材料;以及溶劑等添加物。就藉由添加能量而硬化的材料而言,例如使用壓克力系聚合物等紫外線硬化型樹脂。就藉由添加與前述能量不同的能量而產生氣體的材料而言,可舉出例如光吸收劑與熱分解性物質之混合物。此時為了使光吸收劑發熱而照射的光,成為用以產生氣體的能量。Supplementary description of the above procedures. The peeling hardener 11 includes materials that are hardened by adding energy, for example, materials that are hardened by ultraviolet rays, materials that generate gas by adding energy different from the aforementioned energy, and additives such as solvents. As a material that is hardened by adding energy, for example, a UV-curable resin such as an acrylic polymer is used. Examples of the material that generates a gas by adding an energy different from the aforementioned energy include a mixture of a light absorber and a thermally decomposable substance. At this time, the light irradiated to heat the light absorber becomes energy for generating a gas.
就光吸收劑而言,可使用例如吸受可見光區域之雷射光而發熱的物質例如碳煙粉、金屬粉、金屬氧化粉等,就熱分解性物質而言,例如有機物之情形可使用聚碳酸酯、聚乙烯醇、聚酯、聚丙烯酸酯等。又,亦可係吸收紫外線而發熱的物質,代替吸收可見光區域之雷射光而發熱的物質。將光吸收劑的「光」定為係將可見光、紫外線兩者加以包含的光之情形,則可說是能使用吸收可見光或者紫外線而發熱的物質作為光吸收劑。藉由添加能量而產生氣體的材料,亦可係由於受到紫外線照射而利用該紫外線的能量分解並產生氣體的樹脂,例如壓克力系的樹脂。As the light absorber, for example, a substance that emits heat by absorbing laser light in the visible light region, such as carbon soot, metal powder, metal oxide powder, etc., and in the case of a thermally decomposable material such as an organic substance, polycarbonate can be used. Ester, polyvinyl alcohol, polyester, polyacrylate, etc. In addition, it may be a substance that generates heat by absorbing ultraviolet rays, instead of a substance that generates heat by absorbing laser light in the visible light region. When the "light" of a light absorber is light including both visible light and ultraviolet light, it can be said that a substance that absorbs visible light or ultraviolet light and generates heat can be used as the light absorber. The material that generates gas by adding energy may also be a resin that is decomposed by the energy of the ultraviolet ray and generates a gas, such as an acrylic resin.
就保護膜用的硬化劑12而言,可使用藉由添加能量而硬化的材料,例如既述紫外線硬化型樹脂。又,保護膜用的硬化劑12可使用利用紫外線以外的可見光等硬化之光固型樹脂,或者亦可使用熱固型樹脂。就光固型樹脂而言,例如可使用將聚合性單體例如丙烯酸酯,與例如1-羥-環己-苯酮等光自由基引發劑加以包含者。就熱固型樹脂而言,可使用例如環氧樹脂或酚醛樹脂等。As the hardener 12 for a protective film, a material that is hardened by adding energy, for example, the aforementioned UV-curable resin can be used. As the curing agent 12 for the protective film, a light-curable resin hardened by visible light or the like other than ultraviolet rays may be used, or a thermosetting resin may be used. For the photo-curable resin, for example, a polymerizable monomer such as acrylate and a photo-radical initiator such as 1-hydroxy-cyclohexyl-benzophenone can be used. As the thermosetting resin, for example, an epoxy resin or a phenol resin can be used.
又,剝離用的硬化劑11及保護膜用的硬化劑12亦可使用相同的化學劑,並添加溶劑而使作為塗佈液時的濃度彼此不同者。例如可舉出使用將藉由照射紫外線而硬化的材料與藉由照射紫外線而分解並產生氣體的樹脂加以包含的市販化學劑作為兩硬化劑11、12,並使該化學劑的溶媒即溶劑的量在硬化劑11與硬化劑12之間不同。在此例中,剝離用的硬化劑11與保護膜用的硬化劑12,硬化時的紫外線波長彼此不同,又分解產生氣體時的波長彼此不同。Moreover, the same hardening | curing agent 11 for peeling and hardening | curing agent 12 for protective films may use the same chemical agent, and may add a solvent so that the density | concentrations may differ from each other as a coating liquid. For example, a commercially available chemical agent containing a material that is hardened by irradiation with ultraviolet rays and a resin that is decomposed to generate gas by irradiation with ultraviolet rays is used as the two hardeners 11 and 12, and the solvent of the chemical agent is a solvent. The amount differs between the hardener 11 and the hardener 12. In this example, the curing agent 11 for peeling and the curing agent 12 for protective films have different wavelengths of ultraviolet rays during curing, and different wavelengths when they are decomposed to generate gas.
如此例,晶圓W與保護膜用的硬化劑12之間夾入有剝離用的硬化劑11時,可視為藉由兩種硬化劑11、12,詳細而言為剝離用的硬化劑11所硬化而成的硬化劑層與保護膜用的硬化劑12所硬化而成的硬化劑層來形成保護膜,但說明上,定為將保護膜用的硬化劑12所硬化而成的硬化劑層稱為保護膜。又,此時使保護膜用的硬化劑12硬化的能量相當於第1能量,用以使氣體自剝離用的硬化劑11產生的紫外線相當於第2能量。In this case, when the hardener 11 for peeling is sandwiched between the wafer W and the hardener 12 for the protective film, it can be regarded as the hardener 11 for peeling through the two hardeners 11 and 12 in detail. The hardening agent layer hardened and the hardening agent layer hardened by the hardener 12 for the protective film form a protective film, but the hardening agent layer hardened by the hardener 12 for the protective film is described as a hardening agent layer in the description. Called a protective film. In this case, the energy for curing the hardener 12 for the protective film corresponds to the first energy, and the ultraviolet rays generated from the hardener 11 for gas self-peeling correspond to the second energy.
在本發明中,亦可係未使用剝離用的硬化劑11之製程,就此種例而言,保護膜用的硬化劑12可使用將藉由照射紫外線而硬化的材料與藉由添加光而產生氣體的材料加以包含者。此時,能藉由將既定波長的光照射至硬化劑12,使氣體自硬化劑12產生並在硬化劑12與晶圓W之間形成間隙,而如既述地移除保護膜。In the present invention, it is also possible to use a process in which the hardener 11 for peeling is not used. In this case, the hardener 12 for the protective film may be made of a material that is hardened by irradiation with ultraviolet rays and generated by adding light. The material of the gas is included. At this time, by irradiating light of a predetermined wavelength to the curing agent 12, a gas can be generated from the curing agent 12 and a gap can be formed between the curing agent 12 and the wafer W, thereby removing the protective film as described above.
就移除保護膜的手法而言,不限於將雷射光或紫外線等能量添加至晶圓W的一面側,例如添加至剝離用的硬化劑11的手法(未使用剝離用的硬化劑11時係添加至保護膜用的硬化劑12的手法),亦可將溶劑供給至晶圓W的一面側,溶解例如剝離用的硬化劑11及保護膜用的硬化劑12。The method of removing the protective film is not limited to adding energy such as laser light or ultraviolet rays to one side of the wafer W, and for example, a method of adding to the hardener 11 for peeling (when the hardener 11 for peeling is not used) Method of adding to the hardener 12 for the protective film), a solvent may be supplied to one side of the wafer W, and the hardener 11 for the peeling and the hardener 12 for the protective film may be dissolved, for example.
從使保護膜用的硬化劑12的表面確實地平坦化的觀點而言,宜如既述地在推壓構件14接觸於保護膜用的硬化劑12之狀態下隔著推壓構件14將紫外線照射至保護膜用的硬化劑12。因此推壓構件14可使用令用於使保護膜用的硬化劑12硬化的波長之紫外線穿透的材料,例如玻璃。就玻璃而言,可使用石英玻璃,亦可係其它玻璃。保護膜用的硬化劑12係光穿透型的硬化劑時,推壓構件14可使用令光穿透的材料例如石英玻璃等玻璃。From the viewpoint of surely flattening the surface of the hardener 12 for the protective film, as described above, it is preferable that the pressing member 14 is in contact with the hardener 12 for the protective film and the ultraviolet rays are interposed through the pressing member 14. The hardening agent 12 for protective films is irradiated. Therefore, the pressing member 14 can be made of a material such as glass that transmits ultraviolet rays having a wavelength for curing the hardening agent 12 for the protective film. As for glass, quartz glass can be used, or other glass can be used. When the hardener 12 for the protective film is a light-transmissive hardener, the pressing member 14 can be made of a material that transmits light, such as glass such as quartz glass.
就將紫外線或者可見光域的波長之雷射光照射至保護膜用的硬化劑12的手法而言,不限於穿透推壓構件14,亦可例如將載置晶圓W的載置部即平台藉由例如石英玻璃來構成,並自該平台的下方側隔著平台而照射至晶圓W。此時紫外線或者光自晶圓W的背面到達表面而照射至正面側(一面側)。又,於藉由推壓構件14推壓保護膜用的硬化劑12的表面之後,即使推壓構件14離開硬化劑12後亦維持該表面的平坦化之情形,亦可在此狀態將紫外線照射至硬化劑12。保護膜用的硬化劑12係熱固型樹脂時,亦可將藉由在將塗佈有保護膜用的硬化劑12之晶圓W加以載置的平台藉由例如設於平台內的加熱器予以加熱,或從晶圓W的上方或者平台的下方側藉由紅外線燈等燈具予以加熱。The method of irradiating the laser light having a wavelength in the ultraviolet or visible light range to the hardener 12 for the protective film is not limited to penetrating the pressing member 14. For example, a platform on which the wafer W is placed may be borrowed. The wafer W is made of, for example, quartz glass, and is irradiated from the lower side of the stage through the stage. At this time, ultraviolet rays or light reaches the surface from the back surface of the wafer W and is irradiated to the front side (one surface side). In addition, after the surface of the hardener 12 for the protective film is pressed by the pressing member 14, even if the pressing member 14 leaves the hardener 12, the surface is maintained flat, and ultraviolet rays can be irradiated in this state. To hardener 12. When the hardener 12 for the protective film is a thermosetting resin, the stage on which the wafer W coated with the hardener 12 for the protective film is placed may be, for example, a heater provided in the stage. It is heated, or it is heated from the upper side of the wafer W or the lower side of a stage by lamps, such as an infrared lamp.
在圖1(d)中,保護膜用的硬化劑12的表面塗佈有脫模劑13,但脫模劑13亦可塗佈於推壓構件14的推壓面側。就將脫模劑13塗佈於保護膜用的硬化劑12的表面之手法而言,例如可採用在將保護膜用的硬化劑12塗佈於晶圓W上的塗佈模組內進行塗佈的手法。研削、研磨晶圓W的背面側(另一面側)縮小厚度之後,亦即薄層化之後(圖2(g)),晶圓W過薄而不易搬運時,宜將搬運用的支持構件,例如板狀的支持構件藉由吸附或者黏接而以自由裝上拆下的方式安裝至晶圓W的保護膜的表面。就支持構件而言,可例如之後詳述地使用市售的板狀之靜電吸爪構件,或者亦可使用具有真空吸附功能(真空吸爪功能)的板狀體,由於真空吸附之情形須有抽吸道構件,所以靜電吸爪構件具有能夠簡樸化的優點。又,就支持構件而言,板狀的推壓構件14可使用例如玻璃板,此時可舉出將玻璃板黏接於硬化劑12所構成的保護膜的表面的手法。另,是否使用搬運用的支持構件可因應於保護膜的厚度等而決定,本發明並不限定於使用搬運用的支持構件。In FIG. 1 (d), the release agent 13 is applied to the surface of the hardener 12 for the protective film, but the release agent 13 may be applied to the pressing surface side of the pressing member 14. As a method of applying the release agent 13 to the surface of the hardener 12 for the protective film, for example, coating can be performed in a coating module in which the hardener 12 for the protective film is applied to the wafer W. The technique of cloth. After grinding and polishing the back side (the other side) of the wafer W to reduce its thickness, that is, after thinning (Fig. 2 (g)), if the wafer W is too thin to be easily transported, it is advisable to transfer the supporting member for transport. For example, a plate-shaped support member is attached to the surface of the protective film of the wafer W by being attached or detached by suction or adhesion. As for the supporting member, for example, a commercially available plate-shaped electrostatic claw member may be used in detail later, or a plate-shaped body having a vacuum suction function (vacuum suction function) may be used. The suction channel member, so the electrostatic suction claw member has the advantage that it can be simplified. As the supporting member, for example, a glass plate may be used as the plate-shaped pressing member 14. In this case, a method of bonding the glass plate to the surface of the protective film made of the hardener 12 may be mentioned. In addition, whether to use the supporting member for transportation can be determined depending on the thickness of the protective film, etc., and the present invention is not limited to using the supporting member for transportation.
於保護膜用的硬化劑12塗佈後具有黏著性,於該硬化劑12硬化時能定為玻璃板黏接於其表面的狀態之情形,可將該玻璃板用作為支持構件。於保護膜用的硬化劑12硬化時不能定為將玻璃板黏接於其表面的狀態之情形,可於硬化劑12硬化之後,將藉由例如紫外線照射而發揮黏接功能的黏著劑塗佈於該硬化劑12的表面,並藉由該黏著劑(黏接劑)將玻璃板貼附至硬化劑12的表面。The hardening agent 12 for a protective film has adhesiveness after being coated, and when the hardening agent 12 is cured, it can be determined that the glass plate is adhered to the surface thereof. The glass plate can be used as a supporting member. In the case where the hardener 12 for the protective film cannot be fixed to a state where the glass plate is adhered to the surface when the hardener 12 is cured, the hardener 12 can be coated with an adhesive that exerts an adhesive function by, for example, ultraviolet irradiation. A glass plate is adhered to the surface of the hardener 12 by the adhesive (adhesive).
搬運用的支持構件係於將晶圓W貼附至切割貼帶22之後取下。就搬運用的支持構件而言,使用靜電吸附構件時,可藉由將靜電吸附構件的電極進行接地而取下,又,使用具有真空吸附功能的板狀體時,只要停止抽吸即可。 就搬運用的支持構件而言使用玻璃板等推壓構件14之情形,係藉由照射例如紫外線用以使黏著劑的黏著力降低而自晶圓W取下推壓構件14。使用剝離用的硬化劑11之情形,係如既述地藉由隔著推壓構件14即例如玻璃板而照射例如雷射光至剝離用的硬化劑11之後,相對於晶圓W而相對性地拿起推壓構件14,藉以自晶圓W的表面移除推壓構件14及保護膜用的硬化劑12。The supporting member for conveyance is detached after the wafer W is attached to the dicing tape 22. As for the supporting member for transportation, when an electrostatic adsorption member is used, it can be removed by grounding the electrode of the electrostatic adsorption member, and when a plate-shaped body having a vacuum adsorption function is used, the suction can be stopped. In the case of using the pressing member 14 such as a glass plate as the supporting member for transportation, the pressing member 14 is removed from the wafer W by irradiating, for example, ultraviolet rays to reduce the adhesive force of the adhesive. When the hardener 11 for peeling is used, as described above, the hardener 11 for peeling is irradiated with laser light through the pressing member 14, for example, a glass plate, and then is relatively relative to the wafer W. The pressing member 14 is picked up, and the pressing member 14 and the hardener 12 for the protective film are removed from the surface of the wafer W.
即使係未使用剝離用的硬化劑11之情形,亦藉由保護膜用的硬化劑12以外的黏接劑先將推壓構件14黏接於該硬化劑12,而於使硬化劑12變質而自晶圓W剝除時,將推壓構件14與硬化劑12一體性地自晶圓W移除。黏接或者附著於推壓構件14的保護膜用的硬化劑12,例如藉由溶劑除去並清洗,藉而得以將推壓構件14再利用。Even when the hardener 11 for peeling is not used, the pressing member 14 is first adhered to the hardener 12 by an adhesive other than the hardener 12 for the protective film, and the hardener 12 is deteriorated. When peeling from the wafer W, the pressing member 14 and the hardener 12 are integrally removed from the wafer W. The hardener 12 for the protective film that is adhered or adhered to the pressing member 14 can be reused by removing and cleaning the solvent, for example.
在以上說明中,保護膜用的硬化劑12之平坦化程序係定為使用推壓構件14,但該平坦化程序亦可於保護膜用的硬化劑12硬化之後藉由CMP(化學性、機械性研磨)而進行。本發明由於使用塗佈膜而非貼帶來作為保護膜,所以能利用CMP(藉由研磨劑或者研磨液的化學成分與被處理體之化學反應而增加機械性研磨作用之處理),藉此能使保護膜的表面平坦化。In the above description, the flattening procedure of the hardener 12 for the protective film is set to use the pressing member 14, but the flattening procedure may be performed by CMP (chemical, mechanical, etc.) after the hardener 12 for the protective film is hardened. Abrasion). Since the present invention uses a coating film instead of a tape as a protective film, it is possible to use CMP (processing that increases the mechanical polishing effect by chemical reaction between the abrasive or the chemical component of the polishing solution and the object to be treated), thereby The surface of the protective film can be flattened.
若先補充說明圖3,則貼附於切割貼帶22的晶圓W,在圖3(j)之例中,係藉由自一面側切斷至另一面側而分斷成各積體電路晶片10,但不限於此種所謂的全切斷方式,亦可利用於圖1(a)所示的狀態之前,事前先自晶圓W的正面側(一面側)劃入切痕至厚度的中途的所謂的半切斷方式。此時,將晶圓W的背面側於利用磨床薄層化時分斷成各積體電路晶片10(因為有保護膜(硬化劑12)所以不會分離)。又,後面的實施形態中顯示之例,係於將晶圓W的背面側以磨床薄層化之前,自晶圓W的背面側進行隱形切割(將雷射的焦點聚於晶圓W內部而於內部形成龜裂的切斷)。If FIG. 3 is supplemented first, the wafer W attached to the dicing tape 22 is divided into individual integrated circuits by cutting from one surface side to the other surface side in the example of FIG. 3 (j). The wafer 10 is not limited to this so-called full-cut method. It can also be used before the state shown in FIG. 1 (a), and a cut is made from the front side (one side) of the wafer W to the thickness of the wafer in advance. The so-called half-cut method. At this time, the back side of the wafer W is divided into individual integrated circuit wafers 10 when the wafer W is thinned (they are not separated due to the protective film (hardener 12)). In the example shown in the following embodiment, the wafer W is stealthly cut from the back side of the wafer W before the back side of the wafer W is thinned by a grinder. Cracks in the interior).
以下記載本發明之裝置所實施的程序之形態。The form of the program implemented by the apparatus of this invention is described below.
[第1實施形態] 以下舉更加具體之例(實施形態)記載上述發明內容中說明的程序。圖4~圖8顯示對於表面未形成有凸塊的晶圓W進行之一連串處理的第1實施形態。圖4(a)顯示晶圓W的表面形成有積體電路晶片10之狀態。圖4(b)~圖4(d)分別顯示將剝離用的硬化劑11塗佈於晶圓W的程序,將該硬化劑11藉由紫外線照射而硬化的程序,將保護膜用的硬化劑12塗佈於硬化劑11之上的程序。[First Embodiment] A more specific example (embodiment) will be described below to describe the program described in the above summary. FIG. 4 to FIG. 8 show a first embodiment of performing a series of processes on a wafer W having no bumps formed on the surface. FIG. 4A shows a state where the integrated circuit wafer 10 is formed on the surface of the wafer W. FIGS. 4 (b) to 4 (d) each show a procedure of applying a peeling curing agent 11 to the wafer W, a procedure of curing the curing agent 11 by ultraviolet irradiation, and a curing agent for a protective film. 12 Procedure for coating on hardener 11.
塗佈液即剝離用的硬化劑11,例如既述地包含:藉由照射紫外線而硬化的材料,例如壓克力系聚合物;吸收雷射光而產生氣體的材料,例如光吸收劑與熱分解性物質之混合物;以及溶劑。塗佈剝離用的硬化劑11之後,亦可於將紫外線照射至塗佈膜之前為了使溶劑揮發而將晶圓W加熱。剝離用的硬化劑11例如厚度係5μm以下。又保護膜用的硬化劑12係使用紫外線硬化型的硬化劑,例如壓克力系聚合物,例如厚度係50~100μm。塗佈有保護膜用的硬化劑12的晶圓W受到推壓面係平坦的例如玻璃板所構成的推壓構件14推壓而使硬化劑12的表面平坦化,其次自推壓構件14的上方照射紫外線使硬化劑12硬化,形成硬化層即保護膜(圖5(e))。另,亦可如圖1(d)所示地將脫模劑塗佈於保護膜用的硬化劑12的表面或者推壓構件14的推壓面。The coating solution, that is, the hardening agent 11 for peeling, includes, for example, a material that hardens by irradiating ultraviolet rays, such as an acrylic polymer, and a material that absorbs laser light to generate a gas, such as a light absorber and thermal decomposition Mixtures of sexual substances; and solvents. After the peeling hardener 11 is applied, the wafer W may be heated in order to volatilize the solvent before irradiating ultraviolet rays to the coating film. The thickness of the peeling hardener 11 is, for example, 5 μm or less. The hardener 12 for the protective film is a UV-curable hardener, such as an acrylic polymer, and has a thickness of, for example, 50 to 100 μm. The wafer W coated with the hardener 12 for the protective film is pressed by a pressing member 14 made of, for example, a glass plate with a flat pressing surface to flatten the surface of the hardening agent 12. The upper part is irradiated with ultraviolet rays to harden the hardener 12 to form a protective film that is a hardened layer (FIG. 5 (e)). Moreover, as shown in FIG.1 (d), you may apply a mold release agent to the surface of the hardening | curing agent 12 for protective films, or the pressing surface of the pressing member 14.
其次將搬運用的支持體即具有靜電吸爪功能的板狀體(以下稱ESC板)15安裝至保護膜用的硬化劑12(保護膜)的表面(圖5(f))。在此參照圖18說明ESC板15。ESC板15於核心材料即絕緣性的板狀體例如玻璃板151的一面側,依下述順序疊層有:配線層152;絕緣層153;配線層154;以及絕緣層155;且配線層152、154係連接至共通的配線層156而佈繞至玻璃板151的另一面側為止。ESC板15的另一面側雖未圖示,但設有供電埠,藉由將直流電壓施加於供電埠,使靜電吸附力作用於ESC板15的一面側,而吸附於絕緣物。另,ESC板15的另一面側為了防止翹曲,除了未形成絕緣層155以外,係與一面側同樣地形成。ESC板15的厚度係例如500μm~1mm。Next, a support for transportation, that is, a plate-like body (hereinafter referred to as an ESC board) 15 having an electrostatic suction function is mounted on the surface of the hardener 12 (protective film) for the protective film (FIG. 5 (f)). Here, the ESC board 15 will be described with reference to FIG. 18. The ESC board 15 is laminated on one side of an insulating plate-like body such as a glass plate 151, which is a core material, in the following order: wiring layer 152; insulating layer 153; wiring layer 154; and insulating layer 155; and wiring layer 152 And 154 are connected to the common wiring layer 156 and the cloth is wound up to the other surface side of the glass plate 151. Although the other surface side of the ESC board 15 is not shown, a power supply port is provided. By applying a DC voltage to the power supply port, an electrostatic attraction force acts on one side of the ESC board 15 and is adsorbed on the insulator. The other surface side of the ESC board 15 is formed in the same manner as the one surface side except that the insulating layer 155 is not formed in order to prevent warping. The thickness of the ESC plate 15 is, for example, 500 μm to 1 mm.
安裝有ESC板15的晶圓W受到翻轉,對於晶圓W的另一面(背面)進行隱形切割。圖5(g)係表示將雷射光31自晶圓W的背面側照射,使焦點形成於矽層內而於內部產生裂痕32的狀態。焦點的位置沿著對應於晶圓W之切割線的位置而移動。其後,自晶圓W取下ESC板15(圖5(h)),研削、研磨晶圓W的背面(背磨)而薄層化(圖6(i))。ESC板15的取下係藉由將設於ESC板15的供電埠連接至接地而進行。The wafer W on which the ESC board 15 is mounted is inverted, and the other side (back surface) of the wafer W is subjected to stealth dicing. FIG. 5 (g) shows a state where the laser light 31 is irradiated from the back side of the wafer W to form a focal point in the silicon layer, and a crack 32 is generated inside. The position of the focal point moves along the position corresponding to the scribe line of the wafer W. Thereafter, the ESC board 15 is removed from the wafer W (FIG. 5 (h)), and the back surface (back grinding) of the wafer W is ground and polished to be thin (FIG. 6 (i)). The removal of the ESC board 15 is performed by connecting a power supply port provided on the ESC board 15 to the ground.
進行隱形切割時,將搬運用的支持體即ESC板15安裝至晶圓W的理由在於,晶圓W產生翹曲時會有無法使焦點正確地聚於既定位置之虞,以及由於隱形切割後的晶圓W於內部產生有加工應變所以將於隱形切割後搬運至背磨裝置時的晶圓W裂開之風險加以減低。The reason why the ESC board 15 which is a support for conveyance is mounted on the wafer W when performing the stealth dicing is that when the wafer W is warped, the focus may not be correctly focused at a predetermined position, and after stealth dicing, Since the wafer W has a processing strain internally, the risk of the wafer W cracking when it is transferred to the back grinding device after stealth dicing is reduced.
並且於薄層化的晶圓W的表面(保護膜的表面)再度安裝ESC板15(圖6(j)),將液體之DAF(Die Attach Film,裸晶貼附薄膜)16塗佈於晶圓W的背面(另一面)(圖6(k)),將晶圓W加熱而使DAF16硬化作為黏接劑(圖6(l))。在此例中,將晶圓W傳遞至例如背磨裝置內之吸附臂為止由於既述理由而定為將ESC板15安裝至晶圓W的狀態,於自吸附臂將晶圓W搬運至背磨用的平台之前自晶圓W取下ESC板15,並於研削、研磨晶圓W的背面之後安裝ESC板15。如此於研削、研磨晶圓W的背面時取下ESC板15的理由在於,現在市售的ESC板15的兩面的平行度不一定高。所以只要ESC板15的兩面的平行度對於晶圓W的背面之平坦性滿足規格,亦可安裝ESC板15並直接研削、研磨晶圓W的背面。Then, the ESC board 15 (FIG. 6 (j)) is mounted on the surface of the thinned wafer W (the surface of the protective film) again, and a liquid DAF (Die Attach Film) 16 is applied to the wafer. The back surface (the other surface) of the circle W (Fig. 6 (k)) heats the wafer W to harden the DAF16 as an adhesive (Fig. 6 (l)). In this example, until the wafer W is transferred to, for example, an adsorption arm in a back-grinding device, the ESC board 15 is mounted on the wafer W due to the reasons described above, and the wafer W is transferred to the back by the self-adsorption arm. The polishing table previously removed the ESC board 15 from the wafer W, and after grinding and polishing the back surface of the wafer W, the ESC board 15 was mounted. The reason for removing the ESC plate 15 when grinding and polishing the back surface of the wafer W in this manner is that the parallelism of both sides of the ESC plate 15 currently on the market is not necessarily high. Therefore, as long as the parallelism of the two sides of the ESC board 15 satisfies the specifications for the flatness of the back surface of the wafer W, the ESC board 15 can also be installed and the back surface of the wafer W can be directly ground and polished.
其次將晶圓W藉由DAF16而黏接於已貼附在環狀之框架21的固持體即切割貼帶22(圖7(m)),取下ESC板15之後(圖7(n)),將例如雷射光照射至晶圓W的一面側而自剝離用的硬化劑11產生氣體,定為將保護膜用的硬化劑12自晶圓W的表面剝離的狀態(圖8(o))。剝離的保護膜用的硬化劑12於其表面吸附有未圖示的吸附墊,被拿起而自晶圓W的表面移除(圖8(p)),再例如使晶圓W翻轉而將清洗液噴吹至晶圓W的表面而清洗該表面。而後,例如藉由使伸張力(拉伸力)至切割貼帶22,而分離成含有各積體電路晶片10的多數之裸晶。Next, the wafer W is adhered to the holder 22 attached to the ring-shaped frame 21 through the DAF 16 (see FIG. 7 (m)), and the ESC board 15 is removed (FIG. 7 (n)). For example, the laser light is irradiated to one side of the wafer W to generate gas from the hardener 11 for peeling, and the hardener 12 for the protective film is peeled from the surface of the wafer W (FIG. 8 (o)). . The hardener 12 for the peeled protective film has an adsorption pad (not shown) adsorbed on the surface, and is removed from the surface of the wafer W by picking it up (FIG. 8 (p)). The cleaning liquid is sprayed onto the surface of the wafer W to clean the surface. Then, for example, by stretching the tensile force (stretching force) to the dicing tape 22, it is separated into a plurality of bare crystals including each of the integrated circuit wafers 10.
依據上述實施形態,將剝離用的硬化劑11及保護膜用的硬化劑12依序逐次塗佈硬化至形成有積體電路晶片10的晶圓W的正面側(一面側),形成硬化劑層即保護膜。因此能於硬化劑12的硬化前以推壓構件14推壓而平坦化。所以,於後續程序切削晶圓W的背面側(另一面側)縮小厚度時,該另一面側變得平坦,抑制積體電路晶片10之厚度的偏差。 又,因為將雷射光照射至晶圓W的背面側而自剝離用的硬化劑11產生氣體,所以能自晶圓W容易地除去保護膜。According to the above-mentioned embodiment, the hardener 11 for peeling and the hardener 12 for protective film are sequentially applied and cured to the front side (one side) of the wafer W on which the integrated circuit wafer 10 is formed to form a hardener layer. Protective film. Therefore, it can be flattened by the pressing member 14 before being hardened by the hardening agent 12. Therefore, when the thickness of the rear surface (the other surface) of the wafer W is reduced in a subsequent process, the other surface becomes flat, and variations in the thickness of the integrated circuit wafer 10 are suppressed. In addition, since the laser light is irradiated to the back side of the wafer W to generate gas from the hardener 11 for peeling, the protective film can be easily removed from the wafer W.
[第2形態] 圖9~圖12係顯示本發明之半導體基板之裝置所實施的處理方法之第2形態的程序。第2實施形態係顯示晶圓W形成有凸塊31時進行的一連串的處理之例。在此例中,例如為了形成400μm左右厚度的保護膜,而2次塗佈保護膜用的硬化劑12。亦即,如圖9(c)、(d)所示,將保護膜用的硬化劑12塗佈於剝離用的硬化劑11之上,藉由紫外線照射而硬化後,在該硬化劑12之上再塗佈硬化劑12(圖10(e))。其後,藉由石英玻璃板所構成的推壓構件14推壓硬化劑12的表面而平坦化之後,藉由紫外線照射使硬化劑12硬化。[Second Embodiment] Figs. 9 to 12 are programs showing a second embodiment of the processing method implemented by the semiconductor substrate device of the present invention. The second embodiment shows an example of a series of processes performed when the wafer W is formed with the bumps 31. In this example, in order to form a protective film having a thickness of about 400 μm, the hardener 12 for the protective film is applied twice. That is, as shown in FIGS. 9 (c) and 9 (d), a hardener 12 for a protective film is coated on the hardener 11 for peeling, and is cured by irradiation with ultraviolet rays. Then, the hardener 12 is applied (FIG. 10 (e)). After that, the surface of the hardener 12 is pressed and flattened by the pressing member 14 composed of a quartz glass plate, and then the hardener 12 is hardened by irradiation with ultraviolet rays.
又,在第1實施形態中,係如圖5(f)、(g)、(h)所示,將ESC板15安裝至晶圓W,進行隱形切割,自晶圓W取下ESC板15,但因為在第2實施形態中未進行隱形切割,所以不進行此等程序。除以上之點外,第2實施形態係進行與第1實施形態同樣的程序。Moreover, in the first embodiment, as shown in FIGS. 5 (f), (g), and (h), the ESC board 15 is mounted on the wafer W, and is subjected to stealth dicing, and the ESC board 15 is removed from the wafer W. However, since stealth cutting is not performed in the second embodiment, these procedures are not performed. Except for the above points, the second embodiment performs the same procedure as the first embodiment.
[第3實施形態] 圖13~圖17係顯示本發明之半導體基板之裝置所實施的處理方法之第3實施形態的程序。第3實施形態係用以將連接用的配線係相對於垂直地延伸的TSV(Through-Silicon Via,矽通孔)加以分離之手法的一例。圖13~圖17中,34係連接用的配線。 自將剝離用的硬化劑塗佈於晶圓W的正面側之程序(圖3(a))至將ESC板15安裝至晶圓W的表面之程序(圖14(f))為止,除了僅塗佈1次保護膜用的硬化劑12以外,係與第2實施形態同樣。[Third Embodiment] FIG. 13 to FIG. 17 are programs showing a third embodiment of the processing method implemented by the semiconductor substrate device of the present invention. The third embodiment is an example of a method for separating a connection wiring system from a TSV (Through-Silicon Via) extending vertically. In Figs. 13 to 17, the 34-type connection wiring. From the procedure of applying the peeling hardener to the front side of the wafer W (FIG. 3 (a)) to the procedure of mounting the ESC board 15 on the surface of the wafer W (FIG. 14 (f)), Other than the application of the hardener 12 for the primary protective film, it is the same as the second embodiment.
其後,將晶圓W的背面藉由CMP而研磨(圖14(g)、清洗之後(圖14(h),藉由蝕刻使連接用的配線34之末端部露出(圖15(i))。蝕刻可係使用蝕刻用的氣體之乾式蝕刻,或者亦可係使用蝕刻液之濕式蝕刻。其次,例如在真空雰圍氣進行CVD,將絕緣膜35成膜至晶圓W的背面而將連接用的配線34之末端埋填至絕緣膜35內(圖15(j)),接著藉由CMP研磨使配線34之末端露出(圖15(k)),將凸塊36安裝至該配線34之末端(圖15(l))。Thereafter, the back surface of the wafer W is polished by CMP (FIG. 14 (g) and after cleaning (FIG. 14 (h), the end portion of the connection wiring 34 is exposed by etching (FIG. 15 (i))). Etching may be dry etching using an etching gas, or wet etching using an etching solution. Second, for example, CVD is performed in a vacuum atmosphere, and the insulating film 35 is formed on the back surface of the wafer W to be connected. The ends of the used wiring 34 are embedded in the insulating film 35 (FIG. 15 (j)), and then the ends of the wiring 34 are exposed by CMP polishing (FIG. 15 (k)), and the bumps 36 are mounted on the wiring 34. End (Figure 15 (l)).
其次對於晶圓W的背面側進行隱形切割(圖15(m)),將切割貼帶22貼附至晶圓W(圖15(m))。之後與既述實施形態同樣,進行ESC板15之取下、雷射光照射、保護膜剝離(圖16(o)~圖17(q)),接著使切割貼帶22伸張(施加拉伸力),分離成含有積體電路晶片10的多數之裸晶圖17(r))。Next, invisible dicing is performed on the back side of the wafer W (FIG. 15 (m)), and the dicing tape 22 is attached to the wafer W (FIG. 15 (m)). After that, the ESC plate 15 is removed, the laser light is irradiated, and the protective film is peeled off (see FIGS. 16 (o) to 17 (q)) in the same manner as in the embodiment described above, and then the cutting tape 22 is stretched (stretching force is applied) 17 (r)), which is separated into a plurality of bare crystals including the integrated circuit wafer 10.
[第4實施形態] 圖19、圖20係顯示本發明之半導體基板之裝置所實施的處理方法之第4實施形態的程序。第4實施形態係將用以推壓保護膜用的硬化劑12之推壓構件兼用為搬運用的支持體之例。圖19(a)係顯示如既述實施形態地使剝離用的硬化劑11硬化後,塗佈保護膜用的硬化劑12之狀態。在此例中,就保護膜用的硬化劑12而言,使用例如由於紫外線而硬化的黏接劑。[Fourth Embodiment] Fig. 19 and Fig. 20 are programs showing a fourth embodiment of the processing method performed by the semiconductor substrate device of the present invention. The fourth embodiment is an example in which the pressing member for pressing the hardener 12 for the protective film is also used as a support for transportation. FIG. 19 (a) shows a state where the hardener 11 for peeling is cured and the hardener 12 for the protective film is applied as in the embodiment described above. In this example, as the hardener 12 for a protective film, for example, an adhesive hardened by ultraviolet rays is used.
並且就推壓構件14而言係使用兩面平行度高的石英玻璃板,藉由推壓構件14推壓硬化劑12的表面而平坦化,並且將用以使該硬化劑(黏接劑)12硬化的既定波長之紫外線自推壓構件14之上照射至晶圓W的一面側,在硬化劑12的表面平坦化狀態下將推壓構件14黏接於硬化劑12(圖19(b))。其後,推壓構件14擔任用以搬運晶圓W的搬運用的支持體之職責,晶圓W搬運至背磨裝置為止並翻轉,進行背面之研削、研磨(薄層化)(圖19(c))。In addition, the pressing member 14 is a quartz glass plate with high parallelism on both sides. The pressing member 14 presses the surface of the hardener 12 to flatten it, and is used to make the hardener 12 (adhesive) 12 flat. The hardened ultraviolet light having a predetermined wavelength is irradiated from the pressing member 14 to one side of the wafer W, and the pressing member 14 is adhered to the curing agent 12 in a state where the surface of the curing agent 12 is flattened (FIG. 19 (b)). . Thereafter, the pressing member 14 functions as a carrier for transporting the wafer W, and the wafer W is transferred to the back grinding device and turned over to perform grinding and polishing (thinning) of the back surface (FIG. 19 ( c)).
其次,如既述實施形態說明地將切割貼帶貼附至晶圓W的背面側(圖20(d)),將雷射光照射至晶圓W的正面側而自剝離用的硬化劑11產生氣體,成為保護膜用的硬化劑12自晶圓W的表面浮起的狀態(未圖示)。其後,藉由使推壓構件14上昇而將保護膜在黏接於推壓構件14下直接拉起,自晶圓W移除(圖20(e))。 在此例中,就保護膜用的硬化劑12而言係使用紫外線硬化型,但亦可使用藉由熱或光(可見光)而硬化者。又,係藉由保護膜用的硬化劑12將推壓構件14即石英玻璃板黏接於該硬化劑12,但就硬化劑12而言使用無黏接性者時,亦可於推壓構件14的推壓面事前塗佈黏接劑,例如由於紫外線、熱或者光而硬化的黏接劑,例如先使硬化劑12硬化後,再使黏接劑硬化。如此另外使用黏接劑時,該黏接劑亦成為保護膜的一部份。Next, as described in the above embodiment, a dicing tape is attached to the back surface side of the wafer W (FIG. 20 (d)), and laser light is irradiated to the front surface side of the wafer W to be generated from the hardener 11 for peeling. The gas is in a state where the hardener 12 for the protective film is floating from the surface of the wafer W (not shown). After that, by pushing the pressing member 14 up, the protective film is directly pulled up under the adhesive member 14 to be removed from the wafer W (FIG. 20 (e)). In this example, the curing agent 12 for a protective film is an ultraviolet curing type, but it is also possible to use one that is cured by heat or light (visible light). In addition, the pressing member 14, that is, the quartz glass plate, is adhered to the hardening agent 12 by the hardening agent 12 for the protective film. However, when a non-adhesive material is used for the hardening agent 12, the pressing member can also be used. The pressing surface of 14 is coated with an adhesive in advance, for example, an adhesive hardened by ultraviolet rays, heat, or light. For example, the hardener 12 is hardened first, and then the adhesive is hardened. When an additional adhesive is used in this way, the adhesive also becomes part of the protective film.
依據第4實施形態,因為利用推壓構件14作為搬運用的支持體,所以相較於分別進行硬化劑12之平坦化程序與搬運用的支持體之安裝程序而言,能將程序簡樸化。 另,不限於如此例地將石英玻璃用作為推壓構件、搬運用的支持體,亦可於將保護膜用的硬化劑12推壓、硬化而平坦化的程序之後,將該石英玻璃或者其它石英玻璃貼附至硬化劑12的表面而將該石英玻璃用作為搬運用的支持體。According to the fourth embodiment, since the pressing member 14 is used as a support for transportation, the procedure can be simplified as compared with separately performing the flattening procedure of the hardener 12 and the installation procedure of the support for transportation. In addition, the quartz glass is not limited to such a case as a pressing member or a support for conveyance, but the quartz glass or other material may be subjected to a procedure of pressing, curing, and flattening the hardener 12 for the protective film. The quartz glass is adhered to the surface of the hardener 12 and the quartz glass is used as a support for transportation.
[半導體基板之處理裝置] 其次說明用以實施既述半導體基板之處理方法的半導體基板之處理裝置的一例。圖21~圖23所示的半導體基板之處理裝置,例如構成為能實施既述第1實施形態、第2實施形態及第3實施形態記載之處理方法。半導體基板之處理裝置包含:搬入搬出區塊S1,用以對於外部搬入搬出半導體基板即晶圓W;以及自此搬入搬出區塊S1觀察而言依序往深處配置的中繼區塊S2、第1處理區塊S3、第2處理區塊S4、及磨削裝置G。各區塊S1~S4例如藉由能彼此連接、分離的結構體而構成。[Processing Apparatus for Semiconductor Substrate] Next, an example of a processing apparatus for a semiconductor substrate for implementing the method for processing a semiconductor substrate described above will be described. The processing apparatus of the semiconductor substrate shown in FIGS. 21 to 23 is configured to be able to perform the processing methods described in the first embodiment, the second embodiment, and the third embodiment, for example. The semiconductor substrate processing device includes: a loading and unloading block S1 for externally loading and unloading a semiconductor substrate, namely a wafer W; and a relay block S2, which is arranged in depth in order from the observation of the loading and unloading block S1 from then on The first processing block S3, the second processing block S4, and the grinding device G. Each of the blocks S1 to S4 is configured by, for example, a structure capable of being connected and separated from each other.
搬入搬出區塊S1包含:平台41,於例如橫方向(X方向)多數(例如3個)載置用以容納搬運多數片之晶圓W的搬運容器即載體C;以及搬運臂即傳遞機構42,用以對於載置於平台41的載體C內進行晶圓W之傳遞。傳遞機構42構成為晶圓W的固持部分係自由進退、往X方向自由移動、繞垂直軸自由旋轉、自由昇降。藉由載體C而搬運的晶圓W,於正面側形成有縱橫排列的多數之積體電路晶片。The loading / unloading block S1 includes a platform 41 on which, for example, a plurality of wafers W (for example, three) in a horizontal direction (X direction), and a carrier C, which is a container for accommodating a plurality of wafers W, and a transfer arm 42 which is a transfer mechanism 42 For transferring the wafer W in the carrier C placed on the platform 41. The transfer mechanism 42 is configured such that the holding portion of the wafer W moves forward and backward freely, moves freely in the X direction, rotates freely about a vertical axis, and rises and falls freely. The wafer W carried by the carrier C has a large number of integrated circuit wafers arranged side by side on the front side.
第1處理區塊S3成為於上下疊層有處理區塊B1、B2的兩層樓,例如1樓區塊B1配置有用以對於晶圓W進行在磨削裝置G進行研削、研磨(背磨)之前的程序之模組。又2樓區塊B2配置有用以對於晶圓W實施背磨進行後的程序之模組。1樓、2樓區塊B1、B2包含:主搬運機構50、60,沿著自各個搬入搬出區塊S1觀察而言往前後方向(Y方向)延伸的例如由導軌構成的搬運道50a、60a而自由移動。主搬運機構50、60構成為晶圓W的固持部分係自由進退、繞垂直軸自由旋轉、自由昇降。The first processing block S3 is a two-story building with processing blocks B1 and B2 stacked on top and bottom. For example, the first floor block B1 is configured to perform grinding and polishing (back grinding) of the wafer W in the grinding device G. Module of previous procedures. The second floor block B2 is provided with a module for performing a back grinding process on the wafer W. Blocks B1 and B2 on the first and second floors include main conveyance mechanisms 50 and 60, and conveyance paths 50a and 60a made of, for example, guide rails extending in the front-rear direction (Y direction) as viewed from each carry-in / out block S1. And move freely. The main conveyance mechanisms 50 and 60 are configured such that the holding portion of the wafer W moves forward and backward freely, rotates freely about a vertical axis, and moves up and down freely.
中繼區塊S2擔任以下職責:將在搬入搬出區塊S1自載體C取出的晶圓W傳遞至1樓區塊B1,並將在2樓區塊B2結束處理的晶圓W傳遞至搬入搬出區塊S1的傳遞機構42。中繼區塊S2包含:傳遞架43,上下地多數配置有晶圓W的載置台;以及自由昇降的第1移置機構44,用以在傳遞架43的各載置台之間進行晶圓W之移置。傳遞架43在以下高度位置配置有晶圓W的載置台:主搬運機構50、60能進行晶圓W之傳遞的高度位置;以及傳遞機構42能進行圓W之傳遞的高度位置。The relay block S2 has the following responsibilities: transfers the wafer W taken out from the carrier C in the check-in and check-out block S1 to block B1 on the first floor, and transfers the wafer W that has finished processing in block B2 on the second floor to the check-in and check-out Passing mechanism 42 of block S1. The relay block S2 includes a transfer rack 43 on which a plurality of mounting tables for wafers W are arranged, and a first lifting mechanism 44 for freely lifting and lowering wafers W between the mounting tables of the transfer rack 43. Its displacement. The transfer rack 43 has a mounting table for the wafer W at a height position where the main transfer mechanisms 50 and 60 can transfer the wafer W and a height position where the transfer mechanism 42 can transfer the circle W.
所以處理前的晶圓W係以傳遞機構42→傳遞架43→第1移置機構44→傳遞架43→1樓區塊B2的主搬運機構50之途徑傳遞,處理後的晶圓W係以2樓區塊B2的主搬運機構60→傳遞架43→第1移置機構44→傳遞架43→傳遞機構42之途徑傳遞。 1樓、2樓區塊B1、B2各者於主搬運機構50、60之搬運道51、61的左右兩側配置有用以對於晶圓W進行處理的模組。在1樓區塊B1中,自搬入搬出區塊S1觀察而言右側設有:塗佈部即塗佈模組51,用以塗佈剝離用的硬化劑11;以及例如2台塗佈部即塗佈模組52、53,用以塗佈保護膜用的硬化劑12。又,左側設有:照射紫外線的紫外線模組54,相當於用以使剝離用的硬化劑11硬化的硬化處理部;照射紫外線的紫外線模組55,相當於如第2實施形態兩次塗佈保護膜用的硬化劑12時用以使第1次塗佈的保護膜用的硬化劑12硬化的硬化處理部;以及照射紫外線的平坦化模組56,用以推壓保護膜用的硬化劑12的表面並且使該硬化劑12硬化,在此例中係兼用為硬化處理部與平坦化處理部(詳細而言係共用載置台)。Therefore, the wafer W before processing is transferred by the transfer mechanism 42 → the transfer rack 43 → the first displacement mechanism 44 → the transfer rack 43 → the main transfer mechanism 50 of the first floor block B2, and the processed wafer W is transferred by The main conveyance mechanism 60 on the second floor block B2 → the transfer frame 43 → the first displacement mechanism 44 → the transfer frame 43 → the transfer mechanism 42. Blocks B1 and B2 on the first and second floors are each provided with modules for processing wafers W on the left and right sides of the conveyance paths 51 and 61 of the main conveyance mechanism 50 and 60. In the block B1 on the first floor, as viewed from the loading / unloading block S1, the right side is provided with: a coating unit 51, which is a coating unit, for coating the hardener 11 for peeling; and, for example, two coating units The coating modules 52 and 53 are used for coating the hardener 12 for a protective film. The left side is provided with an ultraviolet module 54 for irradiating ultraviolet rays, which corresponds to a hardening treatment section for curing the curing agent 11 for peeling, and an ultraviolet module 55 for irradiating ultraviolet rays, which corresponds to double coating as in the second embodiment. The hardener 12 for the protective film is a hardening treatment section for hardening the hardener 12 for the first application of the protective film; and a flattening module 56 for irradiating ultraviolet rays to press the hardener for the protective film The surface of 12 further hardens the hardener 12. In this example, the hardener 12 is used as both a hardening treatment portion and a flattening treatment portion (specifically, a common mounting table).
在2樓的區塊B2中,如圖23所示自搬入搬出區塊S1觀察而言右側設有:塗佈部即塗佈模組61,用以塗佈DAF;模組62,用以貼附切割貼帶;以及清洗部即清洗模組63,用以清洗晶圓W的表面。又,左側設有:用以加熱DAF使其硬化的加熱部即加熱模組64;模組65,用以對於晶圓W裝上拆下ESC板15(此時係為了取下);以及保護膜除去部即保護膜剝離用的模組66,用以將雷射光照射至晶圓W上的保護膜而剝離保護膜。In the block B2 on the second floor, as shown in FIG. 23, as viewed from the moving-in and moving-out block S1, the right side is provided with a coating section, namely a coating module 61 for coating DAF, and a module 62 for mounting A dicing tape is attached; and a cleaning module 63 is a cleaning unit for cleaning the surface of the wafer W. In addition, the left side is provided with: a heating module 64 for heating the DAF to harden it; a module 65 for mounting and removing the ESC board 15 on the wafer W (for removal at this time); and protection The module 66 for removing a protective film, which is a film removing portion, is used to irradiate laser light onto the protective film on the wafer W to peel off the protective film.
第2處理區塊S4包含:傳遞架71,上下地多數配置有晶圓W的載置台;第2移置機構72;隱形切割(SD)模組73;以及模組65,用以對於晶圓裝上拆下ESC板15。傳遞架71係上下地多數配置有晶圓W的載置台,並係在以下高度位置:主搬運機構50、60能進行晶圓W之傳遞的高度位置;以及傳遞機構42能進行晶圓之傳遞的高度位置。第2移置機構72構成為在傳遞架71的各載置台、SD模組73、用以裝上拆下ESC板15的模組65、及磨削裝置G之間進行晶圓之移置,晶圓W的固持部分係自由進退、繞垂直軸自由旋轉、自由昇降。The second processing block S4 includes: a transfer rack 71, a mounting table on which most of the wafers W are arranged; a second displacement mechanism 72; a stealth dicing (SD) module 73; and a module 65 for wafers. Install and remove the ESC board 15. The transfer rack 71 is a mounting table on which most of the wafers W are arranged, and is at the following height positions: the height positions at which the main transfer mechanisms 50 and 60 can transfer the wafers W; and the transfer mechanism 42 can transfer the wafers. Height position. The second displacement mechanism 72 is configured to perform wafer displacement between each mounting table of the transfer rack 71, the SD module 73, the module 65 for mounting and removing the ESC board 15, and the grinding device G. The holding portion of the wafer W is free to advance and retreat, freely rotate about a vertical axis, and freely rise and fall.
以下說明各模組。就塗佈模組51~53,61而言可使用例如圖24所示的裝置。圖24中,101係吸附固持晶圓W並藉由驅動機構100而自由旋轉、自由昇降的真空吸爪,102係杯體模組,103係往下方延伸之外周壁及內周壁形成為筒狀的導引構件。 104係能沿著整圈進行排氣、排液而形成於外杯體105與前述外周壁之間的排出空間,排出空間104的下方側成為能氣液分離的構造。自液體供給源107將液體經由噴嘴106而供給置晶圓W的中心部,並且使晶圓W以例如既定轉速旋轉,使硬化劑或DAF的液體在晶圓W的表面延展而形成塗佈膜。Each module is described below. For the coating modules 51 to 53, 61, for example, a device shown in FIG. 24 can be used. In FIG. 24, 101 is a vacuum suction claw that sucks and holds the wafer W and is free to rotate and lift up and down by the driving mechanism 100. 102 is a cup module. 103 is an outer peripheral wall and an inner peripheral wall extending downward. Guide member. The 104 is a discharge space formed between the outer cup 105 and the outer peripheral wall for exhausting and draining liquid along the entire circle, and a structure capable of gas-liquid separation can be formed below the discharge space 104. The liquid is supplied from the liquid supply source 107 to the center portion of the wafer W through the nozzle 106, and the wafer W is rotated at a predetermined rotation speed, for example, and a liquid of a hardener or DAF is spread on the surface of the wafer W to form a coating film. .
就將此等液體塗佈於晶圓W的手法而言,不限於上述所謂的旋塗,亦可採用例如使用與晶圓W的直徑對應的長度之噴嘴,使該噴嘴往與噴嘴之長度方向正交的方向移動,並且將塗佈液噴吐至晶圓W的表面進行塗佈的手法。The method of applying these liquids to the wafer W is not limited to the so-called spin coating described above. For example, a nozzle having a length corresponding to the diameter of the wafer W may be used, and the nozzle may be directed in the length direction of the nozzle. A method of moving in an orthogonal direction and spraying the coating liquid onto the surface of the wafer W to perform coating.
紫外線模組54、55分別構成為將使剝離用的硬化劑11硬化的波長之紫外線及使保護膜用的硬化劑12硬化的波長之紫外線照射至晶圓W。 平坦化模組56如圖25所示包含:載置台561,用以載置晶圓;以及自由進退、自由昇降的作動機構562,在吸附板狀的推壓構件14例如石英玻璃的外頂面而將載置台561上的晶圓W的表面加以推壓的推壓位置與橫向離開載置台561的待機位置之間移動。560係吸附部。載置台561的上方配置有:含有紫外線燈的紫外線照射部564,配置於燈房563內,相當於照射紫外線的機構。565係框體,566係紫外線穿透窗。又,載置台561埋填有未圖示的、用以在主搬運機構50之間進行晶圓W之傳遞的3根昇降銷。自紫外線照射部564照射的紫外線之波長,設定在用以使保護膜用的硬化劑12硬化的波長。The ultraviolet modules 54 and 55 are configured to irradiate the wafer W with ultraviolet rays having a wavelength for curing the peeling hardener 11 and ultraviolet rays having a wavelength for curing the protective film hardener 12. As shown in FIG. 25, the flattening module 56 includes a mounting table 561 for mounting a wafer, and an operating mechanism 562 for freely advancing and retreating, as well as freely elevating and lowering. On the other hand, a pressing position where the surface of the wafer W on the mounting table 561 is pressed and a standby position which is laterally separated from the mounting table 561 is moved. 560 series adsorption section. An ultraviolet irradiation unit 564 including an ultraviolet lamp is disposed above the mounting table 561, and is arranged in the lamp room 563, which corresponds to a mechanism for irradiating ultraviolet rays. 565 series frame, 566 series ultraviolet transmission window. The mounting table 561 is embedded with three lifting pins (not shown) for transferring the wafer W between the main transfer mechanisms 50. The wavelength of the ultraviolet rays irradiated from the ultraviolet irradiation section 564 is set to a wavelength for curing the curing agent 12 for the protective film.
設於第2處理區塊S4的、相當於用以裝上拆下ESC板15的搬運用的支持體之安裝部的模組74,如圖26所示,包含:載置台741,設於框體740內,用以載置ESC板15;以及棚架742,設於載置台741的上方,能容納多數之ESC板15。ESC板裝上拆下用的模組74構成為以下任一狀態均能裝上拆下ESC板15:在載置台741之上自下起依序載置有晶圓W、ESC板15的狀態;及在載置台741之上自下起依序載置有ESC板15、晶圓W的狀態。As shown in FIG. 26, a module 74 provided in the second processing block S4, which is equivalent to a mounting portion for a support for removing the ESC board 15, includes a mounting table 741, which is provided in the frame. Inside the body 740, an ESC board 15 is placed; and a shelf 742 is provided above the mounting table 741, and can accommodate a large number of ESC boards 15. The module 74 for attaching and detaching the ESC board is configured so that the ESC board 15 can be attached and detached in any of the following states: a state in which the wafer W and the ESC board 15 are sequentially placed on the mounting table 741 from the bottom And the state where the ESC board 15 and the wafer W are sequentially placed on the mounting table 741 from the bottom.
具體而言,將晶圓W藉由例如第2移置機構72載置於載置台741之後,藉由例如第2移置機構72自棚架742取出ESC板15,傳遞置待機於載置台741的上方之自由昇降的吸附部(未圖示),使該吸附部下降而將ESC板15疊至晶圓W。其次藉由未圖示的供電放電用的機構將直流電壓施加至ESC板15的外頂面之供電埠,成為晶圓W上吸附有ESC板15的狀態。又ESC板15疊層於晶圓W的下方側之情形,能藉由設於載置台741的供電放電用的機構對於ESC板15的外底面之供電埠進行供電或者放電,對於疊至ESC板15之上的晶圓W進行吸附、吸附解除。另,載置台741埋填有3根昇降銷,而能對於第2移置機構72進行晶圓W或者ESC板15之傳遞。Specifically, after the wafer W is placed on the mounting table 741 by, for example, the second displacement mechanism 72, the ESC board 15 is taken out from the rack 742 by the second displacement mechanism 72, and the wafer is placed on the placing table 741 and placed on standby. A suction section (not shown) that is freely raised and lowered above makes the suction section lower to stack the ESC board 15 on the wafer W. Next, a DC voltage is applied to a power supply port on the outer top surface of the ESC board 15 by a mechanism for power supply and discharge (not shown), and the ESC board 15 is adsorbed on the wafer W. In the case where the ESC board 15 is stacked on the lower side of the wafer W, the power supply and discharge mechanism provided on the mounting table 741 can supply or discharge power to the power supply port on the outer bottom surface of the ESC board 15 and stack it onto the ESC board. The wafer W above 15 is sucked and released. In addition, the mounting table 741 is embedded with three lift pins so that the wafer W or the ESC board 15 can be transferred to the second displacement mechanism 72.
又,關於設於2樓處理區塊B2的ESC板裝上拆下用的模組65亦同樣地構成,藉由與既述ESC板15之安裝相反的動作而將ESC板15自晶圓W取下。在模組65自晶圓W取下的ESC板15,宜為例如於晶圓W的一個批量之處理結束後,至開始其它批量之處理為止期間,回到模組74再使用。The module 65 for attaching and detaching the ESC board provided in the processing block B2 on the second floor is also constructed in a similar manner, and the ESC board 15 is removed from the wafer W by the operation opposite to the installation of the ESC board 15 described above. Take off. The ESC board 15 removed from the wafer W by the module 65 is preferably returned to the module 74 and used again after the processing of one batch of the wafer W ends and the processing of other batches is started.
加熱模組64可採用例如藉由加熱器加熱並將載置晶圓W的加熱板加以包含的模組。 就用以貼附切割貼帶的模組而言,可使用公知的裝置,但亦可將此模組不設於半導體基板之處理裝置而設於裝置的外部。然而,從減少晶圓W的搬運程序而獲得高產量之觀點而言,宜將該模組設於處理裝置內。As the heating module 64, for example, a module that is heated by a heater and includes a heating plate on which the wafer W is placed. As for a module for attaching a dicing tape, a known device may be used, but the module may be provided outside the device instead of the semiconductor substrate processing device. However, from the viewpoint of reducing the transfer process of the wafer W and achieving a high yield, it is desirable to install the module in a processing apparatus.
保護膜剝離用的模組66如圖27所示,包含:載置台661,設於框體660內,載置貼附有切割貼帶22的晶圓W。再者,模組66包含:吸附構件662,吸附於載置台661上的晶圓W之表面形成的保護膜之表面(硬化劑12的表面);以及作動機構664,使吸附構件662在吸附於晶圓W之表面的位置與用以廢棄保護膜的廢棄容器663的上方位置之間移動。吸附構件662例如係形成為與晶圓W相同大小的板狀體。As shown in FIG. 27, the protective film peeling module 66 includes a mounting table 661, which is provided in the housing 660 and mounts the wafer W on which the dicing tape 22 is attached. Furthermore, the module 66 includes an adsorption member 662, a surface of the protective film (the surface of the hardener 12) formed on the surface of the wafer W adsorbed on the mounting table 661, and an operating mechanism 664 to cause the adsorption member 662 to adsorb on The position of the surface of the wafer W is moved between the position above the disposal container 663 for discarding the protective film. The suction member 662 is, for example, formed as a plate-shaped body having the same size as the wafer W.
載置台661的上方位置設有:雷射光照射部665,照射用以使剝離用的硬化劑11如既述地變質而產生氣體的雷射光。雷射光照射部665構成為形成能將晶圓W之直徑予以壟罩的長度,往與該雷射光照射部665之長度方向正交的方向移動而在晶圓W上掃描,藉而得以將雷射光照射至晶圓W整面。雷射光照射部665相當使剝離用的硬化劑11變質的機構即照射雷射光的機構。A laser light irradiating unit 665 is provided above the mounting table 661 and irradiates laser light for deteriorating the hardener 11 for peeling as described above to generate gas. The laser light irradiating portion 665 is formed to have a length that can cover the diameter of the wafer W. The laser light irradiating portion 665 moves in a direction orthogonal to the length direction of the laser light irradiating portion 665 and scans the wafer W, thereby enabling the laser The light is irradiated onto the entire surface of the wafer W. The laser light irradiation unit 665 corresponds to a mechanism that irradiates the laser light, which is a mechanism that deteriorates the hardener 11 for peeling.
設於2樓處理區塊B2的清洗模組,係用以清洗剝離保護膜之後的晶圓W的表面,例如構成為在使晶圓W翻轉的狀態,亦即正面側向下的狀態下,自設於晶圓W下方的清洗液噴嘴將清洗液例如純水噴吐至晶圓W的表面而清洗該表面。清洗液噴嘴構成為例如形成與晶圓W之直徑對應的長度,往與該清洗液噴嘴之長度方向正交的方向移動並且噴吐清洗液。再者,設有將乾燥用的氣體噴吹至晶圓W的表面的同樣噴嘴,於利用清洗液所為之清洗後將對於晶圓W的表面進行氣體之噴吹。The cleaning module located on the second-floor processing block B2 is used to clean the surface of the wafer W after the protective film is peeled off. For example, the cleaning module is configured to be in a state where the wafer W is inverted, that is, in a state where the front side is downward. A cleaning liquid nozzle provided below the wafer W sprays a cleaning liquid such as pure water onto the surface of the wafer W to clean the surface. The cleaning liquid nozzle is configured to have a length corresponding to the diameter of the wafer W, for example, and moves in a direction orthogonal to the longitudinal direction of the cleaning liquid nozzle to discharge the cleaning liquid. In addition, the same nozzle is provided to spray the drying gas on the surface of the wafer W, and the surface of the wafer W is sprayed with gas after cleaning with a cleaning liquid.
使用此種半導體基板之處理裝置實施既述第1實施形態之程序時,晶圓W依照塗佈模組51→紫外線模組54→塗佈模組52→平坦化模組56→ESC板裝上拆下用的模組74→隱形切割(SD)裝置73→ESC板裝上拆下用的模組74→磨削裝置G→ESC板裝上拆下用的模組74→塗佈模組61→加熱模組64→切割貼帶貼附模組62→ESC板裝上拆下用的模組65→保護膜剝離用的模組66→清洗模組63→載體C之順序流動。清洗之後的晶圓W在外部進行例如切割貼帶22之伸張,分離成各裸晶。When a processing device using such a semiconductor substrate performs the procedure of the first embodiment described above, the wafer W is mounted in accordance with the coating module 51 → ultraviolet module 54 → coating module 52 → flattening module 56 → ESC board Removal module 74 → Stealth cutting (SD) device 73 → ESC board mounting module 74 for removal → Grinding device G → ESC board mounting module 74 for removal → Coating module 61 → Heating module 64 → Cutting tape attaching module 62 → ESC board mounting and removing module 65 → Protective film peeling module 66 → Cleaning module 63 → Carrier C flows sequentially. The cleaned wafer W is externally stretched by, for example, the dicing tape 22 and separated into individual bare crystals.
實施既述第2實施形態之程序時,晶圓W因為進行保護膜用的硬化劑之2次塗佈,所以依塗佈模組51→紫外線模組54→塗佈模組52→紫外線模組55→塗佈模組53→平坦化模組56之順序流動。接著,晶圓W依磨削裝置G→ESC板裝上拆下用的模組74→塗佈模組61之順序流動,其後係與第1實施形態之程序時同樣地流動。When the procedure of the second embodiment is performed, the wafer W is coated twice with the hardener for the protective film. Therefore, the coating module 51 → the ultraviolet module 54 → the coating module 52 → the ultraviolet module 55 → coating module 53 → planarizing module 56 flows in sequence. Next, the wafer W flows in the order of the grinding device G → ESC board mounting and removal module 74 → coating module 61, and thereafter flows in the same manner as in the procedure of the first embodiment.
實施既述第3實施形態之程序時,晶圓W於進行背磨之後,直到在ESC板裝上拆下用的模組74安裝ESC板15為止,係與實施第2實施形態之程序時相同。之後,晶圓W回到載體C,在外部進行自圖14(g)所示的進行CMP之程序至圖15(l)所示的安裝凸塊之程序為止的一連串程序。而後,晶圓W再度搬入至半導體基板之處理裝置,依隱形切割裝置73→切割貼帶貼附模組62→ESC板裝上拆下用的模組65→保護膜剝離用的模組66→清洗模組63→載體C之順序流動。When the procedure of the third embodiment is carried out, after the wafer W is back-grinded, the ESC board 15 is mounted on the module 74 for attaching and detaching the ESC board, which is the same as the procedure of the second embodiment. . After that, the wafer W returns to the carrier C, and a series of procedures from the procedure of performing CMP shown in FIG. 14 (g) to the procedure of mounting bumps shown in FIG. 15 (l) are performed externally. Then, the wafer W is carried into the semiconductor substrate processing device again, according to the invisible cutting device 73 → the cutting tape attaching module 62 → the ESC board mounting and removing module 65 → the protective film peeling module 66 → The cleaning module 63 → the carrier C flows in sequence.
圖21中,200係控制部,並包含記憶部,其記憶以下配方:搬運配方,決定將晶圓W以何種順序搬運至模組群;及處理配方,在各模組進行的處理之順序。又控制部200包含:選擇部,因應於搬入的載體C內之晶圓W的種類別而選擇晶圓之搬運配方。此選擇部例如於自前程序之裝置送來晶圓之種類別時,自記憶部讀出例如與晶圓之種別、搬運配方及處理配方對應的資訊,而設定此等配方。包含搬運配方及處理配方,並包含用以執行在半導體基板之處理裝置進行的一連串處理之步驟群的軟體,係例如存放於硬碟、光碟、磁光碟、記憶卡等記憶媒體,並放入至控制部200的記憶部。In FIG. 21, the 200-series control unit includes a memory unit that memorizes the following recipes: transporting recipes, determining the order in which wafers W are transferred to the module group; and processing recipes, the order of processing performed by each module . The control unit 200 further includes a selection unit that selects a wafer transfer recipe according to the type of the wafer W in the carrier C that is carried in. This selection unit reads, for example, information corresponding to the type of the wafer, the handling recipe, and the processing recipe from the memory unit when the type of wafer is sent from the device of the previous program, and sets these recipes. Software that includes handling recipes and processing recipes, and includes a series of steps to perform a series of processes performed on a semiconductor substrate processing device, such as stored in a storage medium such as a hard disk, optical disk, magneto-optical disk, memory card, and placed in The memory section of the control section 200.
依據上述半導體基板之處理裝置,因為能實施與既述例如第1~第3實施形態對應的程序,所以獲得既述效果。 在上述裝置中,係將用以使保護膜用的硬化劑12平坦化的模組與用以使硬化劑12硬化的模組共用,但此等模組亦可構成為各自的模組。又,關於將雷射光照射至晶圓W的正面側而使剝離用的硬化劑11變質的模組與用以自晶圓W移除保護膜的模組,亦不限於共用,可構成作為各自的模組。According to the processing apparatus for a semiconductor substrate described above, a program corresponding to, for example, the first to third embodiments can be executed, and thus the effects can be obtained. In the above-mentioned device, the module for flattening the hardener 12 for the protective film and the module for hardening the hardener 12 are shared, but these modules may be configured as separate modules. The module that irradiates laser light to the front side of the wafer W and deteriorates the hardener 11 for peeling and the module that removes the protective film from the wafer W are not limited to being used in common, and may be constituted as separate modules. Module.
在上述之例中,亦可構成為在使推壓構件14接觸保護膜用的硬化劑12時,於硬化劑12的表面與推壓構件14之間,夾入有脫模劑。此種情形,例如設有:脫模劑塗佈部即塗佈模組,用以將脫模劑塗佈成水霧狀。就此塗佈模組而言,可利用例如塗佈硬化劑12的模組,可舉出將硬化劑12塗佈於晶圓W後,接著將脫模劑自晶圓W上方藉由水霧而供給,其後將晶圓W搬運至平坦化模組56之例。又脫模劑亦可塗佈於推壓構件14側,此種情形,採用事前已塗佈脫模劑的推壓構件14。或者,可在平坦化模組57內的作動機構562之存取範圍內設置用以將脫模劑塗佈於推壓構件14的機構。In the example described above, when the pressing member 14 is brought into contact with the hardener 12 for the protective film, a release agent may be interposed between the surface of the hardener 12 and the pressing member 14. In this case, for example, a mold release agent coating unit, that is, a coating module is provided to apply the mold release agent in a water mist state. For this coating module, for example, a module that applies a hardener 12 can be used. The hardener 12 can be applied to the wafer W, and then a release agent can be applied from above the wafer W by water mist. An example of supplying and then transferring the wafer W to the planarization module 56. The release agent may be applied to the pressing member 14 side. In this case, the pressing member 14 that has been previously coated with the release agent is used. Alternatively, a mechanism for applying a mold release agent to the pressing member 14 may be provided within the access range of the operating mechanism 562 in the flattening module 57.
硬化劑11、12不限定於紫外線硬化型的硬化劑,可採用光(可見光)硬化型或者加熱固型的硬化劑,此種情形,在平坦化模組56中,設置照射雷射光的機構或者例如用以將載置台561加熱的加熱器等加熱機構,代替照射紫外線的機構。 在上述裝置中,係將用以使保護膜用的硬化劑12平坦化的模組與用以使硬化劑12硬化的模組共用,但此等模組亦可構成為各自的模組。此種情形,例如藉由推壓構件14推壓保護膜用的硬化劑12使其平坦化的平坦化處理部,與使平坦化的硬化劑12硬化的硬化處理部,係構成作為各自的模組。 又,在保護膜剝離用的模組66中,關於使接觸於晶圓W的膜,在此例中為使剝離用的硬化劑12變質的機構,於硬化劑12由於紫外線而變質之情形,採用紫外線之照射機構,又,於硬化劑12為由於加熱而變質之情形,採用將載置台661予以加熱的加熱器等加熱機構。又,就使硬化劑12變質的機構而言,亦可係將物理性的剝離力往離開晶圓W的方向相對性地作用於保護膜的機構,例如將吸附於保護膜整面的吸附構件拉起的機構。The hardeners 11 and 12 are not limited to UV-curable hardeners, and light (visible light) hardeners or heat-curable hardeners may be used. In this case, a mechanism for radiating laser light is provided in the flattening module 56 or For example, a heating mechanism such as a heater for heating the mounting table 561 is used instead of a mechanism for irradiating ultraviolet rays. In the above-mentioned device, the module for flattening the hardener 12 for the protective film and the module for hardening the hardener 12 are shared, but these modules may be configured as separate modules. In this case, for example, the flattening part for flattening the hardener 12 for the protective film by the pressing member 14 and the hardening part for hardening the flattening hardener 12 are configured as respective molds. group. In addition, in the module 66 for peeling a protective film, regarding the film that contacts the wafer W, in this example, a mechanism for deteriorating the hardener 12 for peeling, and when the hardener 12 is degraded by ultraviolet rays, A heating means such as a heater that heats the mounting table 661 is used when the hardening agent 12 is deteriorated by heating when an ultraviolet light irradiation mechanism is used. The mechanism for deteriorating the hardener 12 may be a mechanism that relatively applies a physical peeling force to the protective film in a direction away from the wafer W, such as an adsorption member that adsorbs to the entire surface of the protective film. Pull up the body.
又,關於將雷射光照射至晶圓W的正面側使剝離用的硬化劑11變質的模組與用以自晶圓W移除保護膜的模組,亦不限於共用,可構成作為各自的模組。將此等模組構成作為各自的模組時,係藉由此等模組構成保護膜除去部。 還有,保護膜除去部亦可構成為藉由溶劑除去剝離用的硬化劑11及保護膜用的硬化劑12,此時係將晶圓W配置成正面側向下,可使用自下方側將溶劑供給至晶圓W的表面的機構。The module that irradiates laser light to the front side of the wafer W and deteriorates the hardener 11 for peeling, and the module for removing the protective film from the wafer W are not limited to being used in common, and may be constituted as separate modules. Module. When these modules are configured as their respective modules, the protective film removal section is configured by these modules. In addition, the protective film removing section may be configured to remove the hardener 11 for peeling and the hardener 12 for protective film with a solvent. In this case, the wafer W is arranged with the front side facing downward, and the wafer W A mechanism for supplying a solvent to the surface of the wafer W.
還有,雖使第3實施形態之程序的一部分不在半導體基板之處理裝置內進行而在外部進行,但亦可將必要的裝置組入半導體基板之處理裝置內或者連接至處理裝置,而在裝置內,亦即自載體C取出的晶圓W進行一連串處理之後,回到載體C。In addition, although a part of the procedure of the third embodiment is performed outside the semiconductor substrate processing apparatus, the necessary apparatus may be incorporated into the semiconductor substrate processing apparatus or connected to the processing apparatus, and In other words, after a series of processing is performed on the wafer W taken out from the carrier C, the wafer W is returned to the carrier C.
其次參照圖28~圖30說明用以實施既述第4實施形態之程序的半導體基板之處理裝置的一例。此處理裝置與圖21等所示的既述裝置不同點在於:將平坦化模組構成為可將用來作為推壓構件14的石英玻璃板利用為搬運用作為支持體;將保護膜剝離用的模組構成為自晶圓W剝離保護膜時將保護膜與推壓構件14共同剝離;以及未使用ESC裝上拆下用的模組74、65。再者,使用照射紫外線時係在黏接於推壓構件14的狀態下硬化者作為保護膜用的硬化劑12,此點係與圖21等所示的裝置不同。Next, an example of a processing apparatus for a semiconductor substrate for carrying out the procedure of the fourth embodiment described above will be described with reference to FIGS. 28 to 30. This processing device differs from the aforementioned device shown in FIG. 21 and the like in that the flattening module is configured to use the quartz glass plate used as the pressing member 14 as a support for transportation and to peel off the protective film The module is configured to peel the protective film and the pressing member 14 together when the protective film is peeled from the wafer W; and the modules 74 and 65 for attaching and detaching without using the ESC. It should be noted that the use of a hardener 12 which is cured in a state of being adhered to the pressing member 14 when it is irradiated with ultraviolet rays is used as the hardener 12 for the protective film, which is different from the device shown in FIG. 21 and the like.
平坦化模組57如圖30所示包含:載置台571,設於框體570內,用以載置晶圓W;棚架572,橫向離開載置台571而設置,用以容納多數片推壓構件14;以及移置機構573,配置於載置台571與棚架572之間,用以移置推壓構件。移置機構573構成為能藉由吸附部574而吸附固持推壓構件14。又移置機構573構成為自由進退、繞垂直軸自由旋轉、自由昇降,俾能自棚架572取出推壓構件14移置於載置台571上的晶圓W之上而推壓該晶圓W的表面的硬化劑12。又平坦化模組57與既述圖25之平坦化模組56同樣地包含紫外線照射部564等。As shown in FIG. 30, the flattening module 57 includes: a mounting table 571 provided in the frame 570 for mounting the wafer W; and a shelf 572 disposed laterally away from the mounting table 571 to accommodate a large number of wafers. The member 14; and a displacement mechanism 573, which is disposed between the mounting base 571 and the shelf 572, and is used to displace the pressing member. The displacement mechanism 573 is configured to be capable of sucking and holding the pressing member 14 by the sucking portion 574. The displacement mechanism 573 is configured to freely advance and retreat, freely rotate about a vertical axis, and freely rise and fall, and can take out the pressing member 14 from the shelf 572 and move the wafer W on the mounting table 571 to press the wafer W. The surface of the hardener 12. The flattening module 57 includes an ultraviolet irradiation section 564 and the like similar to the flattening module 56 of FIG. 25 described above.
保護膜剝離用的模組57,係與圖27所示的模組56大致同樣的構成,但在以下點不同:將吸附構件662吸附於推壓構件14的表面而將硬化劑12與推壓構件14共同自晶圓W除去(剝離);以及設置容納推壓構件14的棚架代替廢棄容器663。在保護膜剝離用的模組57自晶圓W取下而容納於棚架的推壓構件14,宜為例如於結束晶圓W的一個批量之處理後,至開始其它批量之處理為止期間,藉由溶劑清洗,並搬運至平坦化模組57內的棚架572再使用。The module 57 for peeling the protective film has a structure substantially the same as that of the module 56 shown in FIG. 27, but differs in the following points: the adsorption member 662 is adsorbed on the surface of the pressing member 14, and the hardener 12 and the pressing member are pressed. The members 14 are collectively removed (peeled) from the wafer W; and a shelf for accommodating the pressing members 14 is provided instead of the waste container 663. The module 57 for peeling off the protective film is preferably removed from the wafer W and accommodated in the pressing member 14 of the shelf, for example, after the processing of one batch of the wafer W is completed and the processing of another batch is started, It is cleaned with a solvent and transferred to the shelf 572 in the flattening module 57 for reuse.
藉由溶劑而清洗之情形,可將推壓構件14藉由例如主搬運機構60而搬入至塗佈模組61內並將溶劑供給至推壓面而溶解除去硬化劑11、12。就用以供給溶劑的模組而言,可係其它塗佈模組51~53,亦可係另行設置的專用塗佈模組。 在圖28、圖29所示的裝置中,晶圓之流動與圖21、圖22所示的裝置不同點在於:使晶圓W的表面之保護膜用的硬化劑12硬化後,將晶圓W與推壓構件14共同搬運直到保護膜剝離用的模組;以及不存在有ESC板15之裝上拆下程序。In the case of cleaning with a solvent, the pressing member 14 can be carried into the coating module 61 by, for example, the main conveyance mechanism 60 and the solvent can be supplied to the pressing surface to dissolve and remove the hardeners 11 and 12. As for the module for supplying the solvent, it can be other coating modules 51 to 53 or a special coating module provided separately. In the apparatus shown in FIGS. 28 and 29, the flow of the wafer is different from the apparatus shown in FIGS. 21 and 22 in that the hardener 12 for the protective film on the surface of the wafer W is cured, and then the wafer is cured. The module W is transported together with the pressing member 14 until the protective film is peeled off; and there is no procedure for attaching and detaching the ESC board 15.
在實施本發明之處理方法的半導體基板之處理裝置中,亦可構成為不使用ESC板15或推壓構件14等搬運用的支持體而在一連串模組間單獨搬運晶圓W。並且雖亦可構成為無法使用搬運用的支持體(不設置ESC板之裝上拆下用的模組等),也可為能選擇使用搬運用的支持體之模式與不使用之模式。In the semiconductor substrate processing apparatus for carrying out the processing method of the present invention, the wafer W may be individually transferred between a series of modules without using a support for transportation such as the ESC board 15 or the pressing member 14. In addition, it can be configured such that it cannot be used for carrying support (modules for attaching and detaching without an ESC board, etc.), and it can also be a mode that can use the carrying support and a mode that is not used.
此種情形,若係圖21、圖22所示的裝置,可使控制部200具有:選擇部,能因應於晶圓W的種類別等而選擇使用ESC板之裝上拆下用的模組74、65之模式與不使用之模式。又,若係圖28、圖29所示的裝置,亦可先在塗佈模組52、53或者就在塗佈模組53準備推壓構件14所能黏接之類型的硬化劑與無法黏接之類型的硬化劑作為保護膜用的硬化劑12,並依來自控制部200的控制信號而區別使用此等者。此時,就保護膜剝離用的模組66而言,只要將圖27所示的廢棄容器663增設於容納推壓構件14的架即可。In this case, if the device shown in FIG. 21 and FIG. 22 is used, the control unit 200 can include a selection unit that can select a module for attaching and detaching the ESC board according to the type of the wafer W and the like. 74, 65 mode and unused mode. In addition, if it is the device shown in FIG. 28 and FIG. 29, the type of hardener that can be bonded to the pressing member 14 and the non-sticking can be prepared in the coating module 52, 53 or in the coating module 53 first. The following type of hardener is used as the hardener 12 for the protective film, and these are used differently depending on the control signal from the control unit 200. In this case, as for the module 66 for peeling the protective film, the waste container 663 shown in FIG. 27 may be added to a rack that accommodates the pressing member 14.
另,於將剝離用的硬化劑11塗佈於晶圓W前自晶圓W的背面側進行所謂的半切斷之情形,亦可將進行半切斷的裝置組入半導體基板之處理裝置內。In addition, when the so-called half-cut is performed from the back surface side of the wafer W before the peeling hardener 11 is applied to the wafer W, a device for performing the half-cut may be incorporated into a processing device for a semiconductor substrate.
W‧‧‧晶圓W‧‧‧ Wafer
10‧‧‧積體電路晶片10‧‧‧Integrated Circuit Chip
10a‧‧‧裸晶10a‧‧‧ bare
11‧‧‧剝離用的硬化劑11‧‧‧ peeling hardener
12‧‧‧保護膜用的硬化劑12‧‧‧ Hardener for protective film
13‧‧‧脫模劑13‧‧‧ release agent
14‧‧‧推壓構件14‧‧‧Pushing member
15‧‧‧ESC板15‧‧‧ESC board
16‧‧‧DAF16‧‧‧DAF
21‧‧‧切割框架21‧‧‧ cutting frame
22‧‧‧切割貼帶22‧‧‧ Cut Tape
23‧‧‧切割刀23‧‧‧ cutting knife
31‧‧‧雷射光31‧‧‧laser light
32‧‧‧裂痕32‧‧‧ Rift
33‧‧‧凸塊33‧‧‧ bump
34‧‧‧連接用的配線34‧‧‧ Wiring for connection
35‧‧‧絕緣膜35‧‧‧ insulating film
36‧‧‧凸塊36‧‧‧ bump
C‧‧‧載體C‧‧‧ carrier
41‧‧‧平台41‧‧‧platform
42‧‧‧傳遞機構42‧‧‧ Delivery agency
43‧‧‧傳遞棚43‧‧‧Transfer Shed
44‧‧‧第1移置機構44‧‧‧ the first relocation mechanism
50、60‧‧‧主搬運機構50, 60‧‧‧ main handling agency
50a、60a‧‧‧搬運道50a, 60a‧‧‧ port
51~53‧‧‧塗佈模組51 ~ 53‧‧‧Coating module
54、55‧‧‧紫外線模組54, 55‧‧‧ UV Module
56、57‧‧‧平坦化模組56, 57‧‧‧ flattening module
61‧‧‧塗佈模組61‧‧‧coating module
62‧‧‧用以將切割貼帶貼附至晶圓的模組62‧‧‧ Module for attaching dicing tape to wafer
63‧‧‧清洗模組63‧‧‧Cleaning module
64‧‧‧加熱模組64‧‧‧Heating Module
65‧‧‧ESC板裝上拆下用的模組(用以取下ESC板的模組)65‧‧‧ESC board for removal module (module for removing ESC board)
66‧‧‧保護膜剝離用的模組66‧‧‧ Module for peeling protective film
71‧‧‧傳遞棚71‧‧‧passing shed
72‧‧‧第2移置機構72‧‧‧ 2nd relocation mechanism
73‧‧‧隱形切割裝置73‧‧‧Invisible cutting device
74‧‧‧ESC板裝上拆下用的模組74‧‧‧ESC board assembly and removal module
100‧‧‧驅動機構100‧‧‧Drive mechanism
101‧‧‧真空吸爪101‧‧‧Vacuum suction claw
102‧‧‧杯體模組102‧‧‧Cup body module
103‧‧‧導引構件103‧‧‧Guide members
104‧‧‧排出空間104‧‧‧Exhaust space
105‧‧‧外杯體105‧‧‧ Outer cup body
106‧‧‧噴嘴106‧‧‧ Nozzle
107‧‧‧液體供給源107‧‧‧Liquid supply source
151‧‧‧玻璃板151‧‧‧glass plate
152‧‧‧配線層152‧‧‧Wiring layer
153‧‧‧絕緣層153‧‧‧Insulation
154‧‧‧配線層154‧‧‧Wiring layer
155‧‧‧絕緣層155‧‧‧Insulation
156‧‧‧配線層156‧‧‧Wiring layer
200‧‧‧控制部200‧‧‧Control Department
560‧‧‧吸附部560‧‧‧Adsorption Department
561‧‧‧載置台561‧‧‧mounting table
562‧‧‧作動機構562‧‧‧ Acting mechanism
563‧‧‧燈房563‧‧‧light room
564‧‧‧紫外線照射部564‧‧‧UV irradiation section
565‧‧‧框體565‧‧‧frame
566‧‧‧紫外線穿透窗566‧‧‧UV transmission window
570‧‧‧框體570‧‧‧frame
571‧‧‧載置台571‧‧‧mounting table
572‧‧‧棚架572‧‧‧Scaffolding
573‧‧‧移置機構573‧‧‧Relocation agency
660‧‧‧框體660‧‧‧Frame
661‧‧‧載置台661‧‧‧mounting table
662‧‧‧吸附構件662‧‧‧ Adsorption member
663‧‧‧廢棄容器663‧‧‧Discarded container
664‧‧‧作動機構664‧‧‧ Acting mechanism
665‧‧‧雷射光照射部665‧‧‧Laser light irradiation section
740‧‧‧框體740‧‧‧frame
741‧‧‧載置台741‧‧‧mounting table
742‧‧‧棚架742‧‧‧Scaffolding
B1‧‧‧1樓處理區塊B1‧‧‧1 floor processing block
B2‧‧‧2樓處理區塊B2‧‧‧2 floor processing block
G‧‧‧磨削裝置G‧‧‧Grinding device
S1‧‧‧搬入搬出裝置S1‧‧‧In and out device
S2‧‧‧中繼裝置S2‧‧‧Relay
S3‧‧‧第1處理區塊S3‧‧‧The first processing block
S4‧‧‧第2處理區塊S4‧‧‧The second processing block
圖1(a)~(d)係顯示本發明之裝置所實施的本發明之程序的概要之程序圖。 圖2(e)~(g)係顯示本發明之裝置所實施的本發明之程序的概要之程序圖。 圖3(h)~(j)係顯示本發明之裝置所實施的本發明之程序的概要之程序圖。 圖4(a)~(d)係顯示本發明之裝置所實施的程序之第1形態的程序圖。 圖5(e)~(h)係顯示本發明之裝置所實施的程序之第1形態的程序圖。 圖6(i)~(l)係顯示本發明之裝置所實施的程序之第1形態的程序圖。 圖7(m)~(n)係顯示本發明之裝置所實施的程序之第1形態的程序圖。 圖8(o)~(p)係顯示本發明之裝置所實施的程序之第1形態的程序圖。 圖9(a)~(d)係顯示本發明之裝置所實施的程序之第2形態的程序圖。 圖10(e)~(h)係顯示本發明之裝置所實施的程序之第2形態的程序圖。 圖11(i)~(k)係顯示本發明之裝置所實施的程序之第2形態的程序圖。 圖12(l)~(n)係顯示本發明之裝置所實施的程序之第2形態的程序圖。 圖13(a)~(d)係顯示本發明之裝置所實施的程序之第3形態的程序圖。 圖14(e)~(h)係顯示本發明之裝置所實施的程序之第3形態的程序圖。 圖15(i)~(l)係顯示本發明之裝置所實施的程序之第3形態的程序圖。 圖16(m)~(o)係顯示本發明之裝置所實施的程序之第3形態的程序圖。 圖17(p)~(r)係顯示本發明之裝置所實施的程序之第3形態的程序圖。 圖18係顯示本發明之實施形態所用的搬運用之支持體的一例之剖視圖。 圖19(a)~(c)係顯示本發明之裝置所實施的程序之第4形態的程序圖。 圖20(d)、(e)係顯示本發明之裝置所實施的程序之第4形態的程序圖。 圖21係顯示用以實施本發明之方法的半導體基板之處理裝置的一例,且係包含處理區塊的1樓部分之區域的俯視圖。 圖22係顯示上述半導體基板之處理裝置的一例之剖視圖。 圖23係顯示上述半導體基板之處理裝置的一例中,包含處理區塊的2樓部分之區域的一部分之俯視圖。 圖24係顯示上述半導體基板之處理裝置中使用的塗佈模組之剖視圖。 圖25係顯示用以推壓硬化劑使其平坦化並藉由紫外線使其硬化的模組之剖視圖。 圖26係顯示用以將ESC板加以裝上拆下的模組之剖視圖。 圖27係顯示用以自晶圓剝離保護膜的模組之剖視圖。 圖28係顯示用以實施本發明之方法的半導體基板之處理裝置的其它例,且係包含處理區塊的1樓部分之區域的俯視圖。 圖29係顯示用以實施本發明之方法的半導體基板之處理裝置的其它例,且係包含處理區塊的2樓部分之區域的一部分之俯視圖。 圖30係顯示用以推壓硬化劑使其平坦化並藉由紫外線使其硬化,且將推壓構件使用作為搬運用的支持體的模組之剖視圖。1 (a) to (d) are program diagrams showing the outline of the program of the present invention implemented by the apparatus of the present invention. 2 (e) to (g) are program diagrams showing the outline of the program of the present invention implemented by the apparatus of the present invention. 3 (h) to (j) are program diagrams showing the outline of the program of the present invention implemented by the apparatus of the present invention. 4 (a) to (d) are sequence diagrams showing a first form of a program executed by the apparatus of the present invention. 5 (e) to (h) are sequence diagrams showing a first form of a program executed by the apparatus of the present invention. 6 (i) to (l) are flowcharts showing a first form of a program executed by the apparatus of the present invention. 7 (m) to (n) are sequence diagrams showing a first form of a program executed by the apparatus of the present invention. 8 (o) to (p) are sequence diagrams showing a first form of a program executed by the apparatus of the present invention. 9 (a) to (d) are sequence diagrams showing a second form of a program executed by the apparatus of the present invention. 10 (e) to (h) are sequence diagrams showing a second form of the program executed by the apparatus of the present invention. 11 (i) to (k) are sequence diagrams showing a second form of a program executed by the apparatus of the present invention. 12 (l) to (n) are sequence diagrams showing a second form of a program executed by the apparatus of the present invention. 13 (a) to (d) are sequence diagrams showing a third form of a program executed by the apparatus of the present invention. 14 (e) to (h) are sequence diagrams showing a third form of a program executed by the apparatus of the present invention. 15 (i) to (l) are sequence diagrams showing a third form of a program executed by the apparatus of the present invention. 16 (m) to (o) are sequence diagrams showing a third form of a program executed by the apparatus of the present invention. 17 (p)-(r) are sequence diagrams showing a third form of a program executed by the apparatus of the present invention. FIG. 18 is a cross-sectional view showing an example of a support for transportation used in the embodiment of the present invention. 19 (a) to (c) are sequence diagrams showing a fourth form of a program executed by the apparatus of the present invention. 20 (d) and 20 (e) are sequence diagrams showing a fourth aspect of a program executed by the apparatus of the present invention. 21 is a plan view showing an example of a processing apparatus for a semiconductor substrate for implementing the method of the present invention, and is a plan view of an area including a first floor portion of a processing block. FIG. 22 is a cross-sectional view showing an example of the semiconductor substrate processing apparatus. FIG. 23 is a plan view showing a part of an area including a second-floor portion of a processing block in an example of the semiconductor substrate processing apparatus. FIG. 24 is a cross-sectional view showing a coating module used in the semiconductor substrate processing apparatus. FIG. 25 is a cross-sectional view of a module for pressing a hardener to flatten it and hardening it by ultraviolet rays. Fig. 26 is a cross-sectional view showing a module for mounting and removing an ESC board. FIG. 27 is a cross-sectional view showing a module for peeling a protective film from a wafer. FIG. 28 is a plan view showing another example of a processing apparatus for a semiconductor substrate for implementing the method of the present invention, and is a plan view of an area including a first-floor portion of a processing block. FIG. 29 is a plan view showing another example of a semiconductor substrate processing apparatus for implementing the method of the present invention, and is a part of a region including a second-floor portion of a processing block. FIG. 30 is a cross-sectional view of a module for pressing a hardener to flatten it and hardening it with ultraviolet rays, and using the pressing member as a support for transportation.
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