JP2003100665A - Treatment apparatus and adhesive removal method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a haze from being occurred on the surface of a substrate due to an adhesive regarding a treatment apparatus and an adhesive removal method wherein a backside etching device used to etch and treat the back of the substrate is included as a component. SOLUTION: The treatment apparatus is provided with a grinder device 10 used to perform the back grinding treatment of a wafer 2 bonded to a protective tape 3 by the adhesive 8 and the backside etching device 20 which backside- etches and treats the back of the wafer 2 ground by the grinder device 10. An adhesive removal device 50A which removes the adhesive 8 exposed from the protective tape 3 is installed. Thereby, it is possible to prevent the haze from being occurred on the wafer 2 (a semiconductor element 60) due to the evaporation component of a monomer/a polymer or the like generated from the adhesive 8.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus and an adhesive removing method, and more particularly to a processing apparatus and an adhesive removing method which include a backside etching apparatus for etching the back surface of a substrate as a constituent element.

As electronic devices are becoming smaller and thinner,
Further thinning is required for semiconductor elements used in electronic devices. Further, development of a stacked semiconductor device in which a plurality of semiconductor elements are stacked and housed in a single package is also in progress, and there is an increasing demand for thinner semiconductor elements. The thickness of the conventional semiconductor element is 200 to 25
The thickness was about 0 μm, but recently, a semiconductor element having a thickness of about 50 μm has been produced, and further reduction in thickness has been promoted.

[0003]

2. Description of the Related Art Generally, a plurality of semiconductor elements are collectively formed on a circuit forming surface which is a surface of a silicon wafer (substrate). For a wafer on which semiconductor elements are formed on this circuit formation surface, a process of grinding the back surface to achieve a thin structure (back grinding process), and dicing the wafer into individual semiconductor elements by dicing Processing is performed. Further, fine cracks are generated in the wafer which has been subjected to the back grinding process and the dicing process (mechanical grinding and cutting process). If the crack is left as it is, the wafer (semiconductor element) may be damaged starting from the crack portion, which becomes more remarkable as the wafer becomes thinner.

Therefore, after the back grinding process by the grinder device is completed, the wafer is mounted on the back side etching device and the back surface of the wafer is etched (hereinafter referred to as back side etching process).
May be carried out. By performing this backside etching process, it is possible to remove cracks generated on the back surface of the wafer and further reduce the thickness of the wafer.

By the way, in the method of performing the dicing process after the back grinding process is completed, a large warp occurs when the wafer becomes thin due to the back grinding process, and there is a possibility that the dicing process performed thereafter cannot be properly performed. is there. For this reason, dicing processing (hereinafter referred to as half-cut processing) is performed to a predetermined depth of the wafer, and then back-grinding processing is performed to make the wafer (semiconductor element) thin and individualized. There has been proposed a method of simultaneously performing the above (hereinafter, this processing method is referred to as a first dicing method).

The processing procedure of this dicing method will be described below. In the first dicing method, first, a wafer is mounted on a dicing device and a dicing process is performed at a predetermined dicing position to a predetermined depth (hereinafter, this process is referred to as a half cut process). At this time, the half-cut processing is performed from the side of the wafer on which the circuit is formed.

When the half cut process is completed, a protective tape is adhered to the circuit forming surface of the wafer. This allows
The dicing groove formed by the half cut process is closed by the protective tape.

The protective tape used here has a structure in which a resin film is coated with an ultraviolet curable adhesive or a thermosetting adhesive. By adhering the wafer to the protective tape, the circuit forming surface of the wafer is protected by the protective tape.

The wafer mounted on the protective tape is mounted on the grinder device, and the rotating grinding material is pressed against the back surface of the wafer (the surface opposite to the circuit forming surface) to perform back grinding, thereby reducing the thickness of the wafer. Decrease to a given thickness. At this time, when the back grinding reaches the dicing groove, the semiconductor elements are separated into individual pieces at that time.

As described above, the semiconductor element which has been back-ground to a predetermined thickness and separated into individual pieces is subsequently mounted in a back side etching apparatus.
Plasma etching or wet etching is used as the backside etching apparatus. Then, in this backside etching apparatus, a backside etching process is performed on the back surface of the semiconductor element to remove fine cracks that may have occurred.

When the backside etching process by the backside etching device is completed, the semiconductor element is subsequently transported to the transfer device. In this transfer device, first, the protective tape adhered to the circuit forming surface is irradiated with ultraviolet rays to cure the ultraviolet curable adhesive. As a result, the adhesive strength of the adhesive decreases, and the protective tape can be peeled off from the wafer without damaging the circuit formation surface.

Subsequently, the transfer device adheres the tape arranged on the ring-shaped frame to the back surface of the semiconductor element and peels the protective tape from the circuit formation surface. This allows
The circuit forming surface of each semiconductor element faces upward.

[0013]

However, in the conventional pre-dicing method, after the back grinding process is performed in the grinder device to thin the semiconductor element and separate the semiconductor element, the semiconductor element becomes a protective tape. In the adhered state, it is immediately conveyed to the backside etching apparatus and the backside etching process is performed.

However, when the back grinding reaches the dicing groove in the grinder device, the wafer is divided into individual semiconductor elements and the adhesive applied to the protective tape is exposed to the outside. Further, in the past, immediately after the back grinding process was completed, the semiconductor element was mounted on a back side etching device (plasma etching device) while being bonded to the protective tape, and the back side etching process was performed.

For this reason, when it is mounted on a backside etching apparatus (plasma etching apparatus) and pressure-reduced,
The monomer component and / or polymer component of the adhesive (hereinafter referred to as monomer / polymer component) evaporates, and the vaporized component and active species react with the reaction product and are deposited on the surface of the semiconductor element on the side where no circuit is provided. There was a problem that it would end up. As described above, when the deposit is deposited on the surface of the semiconductor element on which the circuit is not provided, there is a problem that the surface of the semiconductor element on the side where the circuit is not formed is fogged.

The present invention has been made in view of the above points, and an object of the present invention is to provide a processing apparatus and an adhesive removing method capable of preventing the substrate surface from being fogged due to the adhesive. To do.

[0017]

In order to solve the above problems, the present invention is characterized by taking the following means.

According to a first aspect of the present invention, a grinder device for performing a backside grinding process and a singulation process for a substrate adhered to a tape with an adhesive, and an etching process for the backside of the substrate ground by the grinder device. In a processing device including a backside etching device, an adhesive removing device for removing the adhesive exposed from the tape is provided.

According to a second aspect of the present invention, in the processing apparatus according to the first aspect, the adhesive removing device is configured to be independent of the grinder device and the backside etching device. It is a thing.

According to a third aspect of the present invention, in the processing apparatus according to the first aspect, the adhesive removing device is arranged in the grinder device.

According to a fourth aspect of the present invention, in the processing apparatus according to the first or third aspect, the adhesive removing device is provided in the backside etching device. is there.

According to a fifth aspect of the present invention, in the processing apparatus according to any one of the first to fourth aspects, the adhesive removing device removes the adhesive using at least a solvent. The second means for curing the adhesive by irradiating with ultraviolet rays, and the third means for removing the volatile components remaining in the adhesive. It is characterized by.

According to the sixth aspect of the present invention, there is provided a method of removing an adhesive agent, which comprises a grinding step of performing a backside grinding process on a plurality of singulated substrates adhered to a tape by an adhesive agent, and the grinding step. After the completion, the adhesive removing step for removing the adhesive exposed from the tape, and the back for further etching the back surface of the substrate subjected to the back surface grinding processing after the adhesive removing step is completed. And a back side etching step of performing a side etching process.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1 to 5 are views for explaining a semiconductor manufacturing apparatus 1A as a processing apparatus which is an embodiment of the present invention. 6 to 8 show the semiconductor manufacturing apparatus 1A.
FIG. 6 is a diagram for explaining each process performed on the wafer 2 by the method.

As shown in FIG. 1, the semiconductor manufacturing apparatus 1A comprises a grinder device 10, a backside etching device 20, a transfer device 30, a transfer device 40, and an adhesive agent removal device 50A.

In the semiconductor manufacturing apparatus 1A, a back grinding process for thinning and dicing the wafer 2 in a grinder apparatus 10 is performed, and a semiconductor element 60 in a back side etching apparatus 20.
Backside etching treatment for removing fine cracks generated on the back surface 2b of the semiconductor device 60 is performed in the transfer device 30 so that the circuit forming surface 2a of the semiconductor element 60 faces upward.
A transfer process for adhering to the V tape 5 is performed. Further, in the adhesive removing device 50A, the adhesive 8 which is a feature of the present invention is used.
Is removed.

First, the wafer 2 processed by the semiconductor manufacturing apparatus 1A will be described prior to the description of the respective devices 10, 20, 30, 40, 50A constituting the semiconductor manufacturing apparatus 1A. The semiconductor manufacturing apparatus 1A according to the present embodiment performs a half-cut process on the wafer 2 in advance to a thickness of about half the thickness of the wafer 2, and then performs the wafer 2 (semiconductor element) during the back grinding process. The pre-dicing method of 60), which simultaneously achieves thinning and individualization, is adopted. Therefore, the wafer 2 shown in FIG.
Before being mounted on the semiconductor manufacturing apparatus 1A, it is sent to a dicing device and half cut processing is performed. As a result, the groove 7 having a predetermined depth is formed on the circuit forming surface 2a of the wafer 2.
(Hereinafter, referred to as a half cut portion) is formed. The depth of the half cut portion 7 is, for example, approximately 1 of the thickness of the wafer 2.
The depth is set to / 2 to 2/3.

When the half-cut processing is completed, FIG.
As shown in (C), the protective tape 3 is adhered to the circuit forming surface 2 a of the wafer 2. As a result, the half-cut portion 7 formed by the half-dicing process is closed by the protective tape 3.

The protective tape 3 used here has a structure in which an ultraviolet curable adhesive 8 is applied to a resin tape as a base material. Therefore, the protective tape 3 is the adhesive 8
To the wafer 2 by the adhesive force of. Further, in this bonded state, the adhesive 8 is sandwiched between the wafer 2 and the protective tape 3 and is not exposed from the half cut portion 7.

The wafer 2 on which the protective tape 3 having the above-mentioned structure is arranged usually has a thickness of about 700 μm, and the thickness of the semiconductor element 60 formed from the wafer 2 becomes thicker as it is. . Therefore, after the circuit is formed on the circuit forming surface 2a, the back surface 2b of the wafer 2 (the surface on the opposite side to the circuit forming surface) is polished to form the wafer 2
Is performed to reduce the thickness of the.

In the semiconductor manufacturing apparatus 1A according to this embodiment,
Back surface 2 by mechanical grinding in the grinder device 10
The wafer 2 is thinned to a predetermined thickness (for example, about 50 μm) by back-grinding b and then back-side etching the back surface 2 b in the back-side etching apparatus 20. Further, since the back-grinding process for the back surface 2b of the wafer 2 is performed at a position above the position where the half-cut portion 7 is reached, when the back-grinding process reaches the bottom of the half-cut portion 7, the wafer 2 is separated into individual pieces. The semiconductor element 60 has an independent structure (first dicing process).

Next, a concrete configuration of each of the devices 10, 20, 30, 40, 50A which constitute the semiconductor manufacturing apparatus 1A will be described. First, the grinder device 10 will be described. As shown in FIG. 6D, the grinder device 10 is a device for back grinding the back surface 2b of the wafer 2. This grinder device 10 is provided with an unprocessed wafer cassette 1 as shown in FIG.
1, a positioning device 12, a chuck table 13, a water cleaning / drying unit 14, a processed wafer cassette 15, a wafer transfer robot 16, and the like.

The wafer 2 having the protective tape 3 adhered to the circuit forming surface 2 a is stored in the unprocessed wafer cassette 11 of the grinder device 10. The wafers 2 stored in the unprocessed wafer cassette 11 are transferred to the wafer transfer robot 16
Then, the wafer 11 is taken out from the unprocessed wafer cassette 11 and first mounted on the alignment device 12.

The grinder device 10 includes a robot arm 1
It has a wafer transfer robot 16 having a wafer holder 17 at the tip of 6A. The wafer 2 is transferred in the grinder device 10 by driving the wafer transfer robot 16.

The wafer holder 17 is configured to hold the wafer 2 by suction. Therefore, when the wafer 2 is transferred, the wafer 2 is held by the wafer holding unit 17 by the suction force of the wafer holding unit 17, so that the wafer 2 does not drop during the transfer.

The alignment device 12 randomly performs alignment processing of the wafers 2 stored in the unprocessed wafer cassette 11. Specifically, the alignment device 12 includes an orientation flat / detector for detecting an orientation flat or notch of the wafer 2.
Notch detecting means (not shown) is provided, and the wafer 2 is displaced based on the detection result of the orientation flat / notch detecting means. As a result, the wafer 2 is aligned.

The wafer 2 aligned by the alignment device 12 is transferred to the chuck table 13 by the wafer transfer robot 16. Chuck table 13
Has a rough grinding section 13A, a finish grinding section 13B, and a ground surface brush cleaning section 13C.

The rough grinding portion 13A is a portion for performing rough surface grinding on the back surface 2b of the wafer 2, and the finish grinding portion 13B is a portion for performing finish grinding on the back surface 2b of the wafer 2. Further, the ground surface brush cleaning unit 13C is a unit for brush cleaning the back surface 2b of the wafer 2. Therefore, on the upper part of the rough grinding portion 13A, a grinding material 18D for rough surface grinding (for example, roughness # 3 is supported by the spindle 18A.
60), but the spindle 1 is located above the finish grinding section 13B.
A grinding material 18E (for example, roughness # 2000) for finish grinding supported by 8B is provided. A cleaning brush 18F supported by a spindle 18C is arranged above the grinding surface brush cleaning section 13C. Each of the spindles 18A to 18C is configured to rotate by a motor (not shown), and is further configured to be movable in the circumferential direction by a moving mechanism (not shown).

The wafer 2 positioned by the alignment device 12 as described above is first mounted on the rough grinding section 13A by the wafer transfer robot 16, and the grinding material 1 is attached to the back surface 2b.
Rough grinding is performed by 8D. During the rough grinding performed by the abrasive 18D, the abrasive 18D reaches the half-cut portion 7 formed on the wafer 2, and the wafer 2 is thereby divided into individual semiconductor elements 60. In the following description, the semiconductor element 60 is divided into individual pieces by the back-grinding process, but by maintaining the state of being adhered to the protective tape 3, the semiconductor in a state where the shape of the wafer 2 as a whole is maintained. The aggregate of the elements 60 is referred to as a wafer 2A after being divided into individual pieces.

When this rough grinding is completed, the chuck table is rotated, and the wafer 2A after singulation is moved from the rough grinding section 13A to the finish grinding section 13B. Then, the grinding material 18E is attached to the back surface 2b of each semiconductor element 60 after the rough grinding.
Finish grinding is performed by. When the above grinding processes are completed, the chuck table is rotated and the wafer 2 is singulated.
A is moved to the grinding surface brush cleaning unit 13C, and the grinding surface brush cleaning unit 13C cleans the grinding surface.

The wafer 2A after being diced after the back grinding process is carried to the water cleaning / drying unit 14 by the wafer carrying robot 16. In the water cleaning / drying unit 14, the wafer 2A after singulation is subjected to a water cleaning process and a drying process to remove dust adhering to the surface. When this process is completed, the individualized wafer 2A is stored in the processed wafer cassette 15. FIG. 6 (E) shows
The wafer 2A after being singulated immediately before being stored in the processed wafer cassette 15 is shown.

The grinder device 10 described above is used for rough surface grinding and finish grinding. It is possible to perform the brush cleaning process and the brush cleaning process in parallel. Therefore, the chuck table 13 can be simultaneously processed with respect to the three wafers 2 (the separated wafer 2A).

When the above-described series of back-grinding processes are completed in the grinder apparatus 10, the individual wafers 2A stored in the processed wafer cassette 15 are separated.
Is delivered to the transport device 40 by a delivery device (not shown). The transfer device 40 is, for example, a conveyor, and transfers the individualized wafer 2A to the left in FIG.

The transfer device 40 transfers the wafer 2A after singulation to the adhesive removing device 50A. This adhesive removal device 5
0A has a function of removing the adhesive 8 that bonds the protective tape 3 and the wafer 2, but for convenience of description, the configuration of the adhesive removing device 50A will be described later.

The diced wafer 2A from which the adhesive 8 has been removed by the adhesive removing device 50A is subsequently transferred by the transferring device 40 to the backside etching device 20. In this backside etching device 20,
The back surface of each semiconductor element 60 thinned by the back grinding process is further back side etched by about 20 μm. Thereby, even if a fine crack is generated in the semiconductor element 60 by the back grinding process (mechanical process), the crack can be removed by the back side etching process, and
Furthermore, the semiconductor element 60 can be made thinner (note that
When only the purpose of removing fine cracks is about 6μ
It is also possible to perform backside etching treatment of about m).

As the back side etching treatment, either dry etching or wet etching can be used. However, dry etching is preferable in terms of uniformity, and among them, plasma etching is preferably used.

The plasma etching may be batch plasma etching in which the entire wafer 2A after singulation is simultaneously irradiated with plasma for etching.
Alternatively, partial plasma etching may be used in which the plasma density is partially increased and irradiation is performed. In the collective plasma etching, the entire surface of the wafer 2A after being divided into pieces is simultaneously etched, which is effective in reducing the time (etching time) required for the backside etching process.

However, in the collective plasma etching, there is a possibility that the plasma density may not be uniform over the entire surface of the wafer 2A after being diced. In this case, the etching rate changes depending on the plasma density, and The backside etching process for the semiconductor element 60 may be unevenly performed. However, by using partial plasma etching, each semiconductor device 6
The backside etching process can be performed under the optimum etching condition over the entire surface of 0 (wafer 2A after singulation). For this reason, the backside etching apparatus 20 used in this embodiment employs a structure using partial plasma etching.

Subsequently, the backside etching device 20
The specific configuration of will be described. FIG. 3 shows the backside etching apparatus 20 on an enlarged scale. The backside etching apparatus 20 is a partial plasma etching apparatus, and is roughly configured to have a chamber 22, a processing gas introduction pipe 24, a magnetron 26, an XYZ table 28, a drive unit 27, and the like.

The chamber 22 is connected to an exhaust means such as a vacuum pump so that the inside of the chamber 22 has a predetermined reduced pressure environment. An XYZ table 28 as a mounting table is provided in the chamber 22 and the individualized wafer 2A, which is a target object, is mounted thereon. The XYZ table 28 is configured to be movable in X, Y, and Z directions by the drive unit 27.

A nozzle 25 extending from the gas introduction pipe 24 is arranged above the XYZ table 28. The upper part of the nozzle 25 is connected to the magnetron 26, and the magnetron 2 is connected to the processing gas flowing through the gas introduction pipe.
The high frequency from 6 is irradiated and plasma is generated. The plasma is separated from the nozzle 25 by the wafer 2A (semiconductor element 6).
0) is locally irradiated and partially etched by the action of plasma.

The portion irradiated with plasma is changed by driving the XYZ table 28 in the XY directions (horizontal direction) by the driving unit 27 and moving the separated wafer 2A relative to the nozzle 25. You can Also, XY
By moving the Z table 28 in the Z direction (vertical direction), the distance between the nozzle 25 and the separated wafer 2A can be adjusted. In addition, as described above, the backside etching process is performed in a reduced pressure environment exhausted by an exhaust unit such as a vacuum pump.

By using the backside etching apparatus 20 having the above structure, the backside 2b of the wafer 2A (semiconductor element 60) after singulation is backside-etched as shown in FIG. 7 (J). Small cracks are removed. Although the backside etching apparatus 20 shown in FIG. 3 is configured to move the individual wafer 2A with respect to the nozzle 25, it is configured to move the individual wafer 2A with respect to the nozzle 25. Alternatively, both of them may be moved.

Next, the transfer device 30 will be described.
The transfer device 30, as shown in FIG.
1, UV irradiation device 31A, alignment device 32, frame mount device 33, protective tape peeling device 34, cleaning device 35, and the like. This transfer device 3
0, as shown in FIG. 8, adheres each semiconductor element 60 constituting the wafer 2A after singulation to the UV tape 5, and
After the separation into pieces, a process of peeling the protective tape 3 from the wafer 2A is performed.

The specific processing procedure is as follows. The backside etching processing is performed in the backside etching apparatus 20, and the individualized wafer 2A transferred by the transfer apparatus 40 is first stored in the receiving stage 31.

The singulated wafer 2A stored in the receiving stage 31 is subsequently irradiated with ultraviolet rays (UV) by the UV irradiation device 31A. This UV irradiation is performed on the UV-curable adhesive 8 that bonds the wafer 2A (semiconductor element 60) and the protective tape 3 after being separated into individual pieces.
This UV irradiation cures the adhesive 8, which reduces the adhesive strength, and therefore the wafer 2 can be easily removed (peeled) from the protective tape 3.

When UV irradiation is carried out in the UV irradiation device 31A, the wafer 2A after singulation is aligned by the alignment device 3
Sent to 2. In this alignment device 32, orientation flat / notch alignment processing (positioning processing) is performed. The singulated wafer 2A that has been subjected to the alignment processing by the alignment device 32 is sent to the frame mounting device 33, where the frame mounting process is performed.

In the frame mounting process, an annular frame 6 on which a UV tape 5 (adhesive such as a thermosetting adhesive or an ultraviolet curable adhesive is previously applied) as shown in FIG. 8 is arranged. Is prepared in advance, and the wafer 2A is adhered to the UV tape 5 after being divided into individual pieces. The reason why the wafer 2A is reattached to the frame 6 in this manner is that the circuit forming surface 2a of each semiconductor element 60 is turned upward.

The UV tape 5 is attached to the frame mount device 33.
When the wafer 2A after singulation is adhered to the frame, the frame 6 on which the wafer 2A after singulation is mounted is protected by the protective tape peeling device 34.
Sent to. In the protective tape peeling device 34, as shown in FIG. 8, the protective tape 3 is peeled from the wafer 2A after being separated into pieces, and the circuit forming surface 2a is exposed. At this time, UV is used as the adhesive 8 for adhering the wafer 2A and the protective tape 3 after being separated into individual pieces.
Since the irradiation device 31A is irradiated with ultraviolet rays to weaken the adhesive force, the peeling process of the protective tape 3 in the frame mount device 33 can be easily performed.

As described above, the transfer device 30 performs the process of transferring the wafer 2A from the protective tape 3 to the UV tape 5 after singulation. The wafer 2A (semiconductor element 60) after being singulated with the circuit forming surface 2a turned upside down is
By cleaning the circuit forming surface 2a in the cleaning device 35, the unnecessary adhesive 8 and the like attached to the circuit forming surface 2a are removed. Then, the individualized wafer 2A after the cleaning process is stored in the individual wafer storage cassette 35.

Next, the adhesive removing device 50A will be described. In this embodiment, the adhesive removing device 50A is configured to be independent of the grinder device 10 and the backside etching device 20, and the disposition position is set between the grinder device 10 and the backside etching device 20. Has been done. As shown in FIG. 5, the adhesive removing device 50A includes a device main body 51. Base 52, UV lamp 54,
It is composed of a solvent nozzle 56, a degassing suction nozzle 57, a heater 58, and the like.

The apparatus main body 51 is connected to a vacuum pump (not shown). Therefore, the inside of the apparatus main body 51 has a structure capable of reducing the pressure. Further, the base 52 is a portion to which the wafer 2A after singulation is mounted, and is configured to be able to fix the wafer 2A after singulation by a suction chuck (not shown). The base 52 is configured to rotate by a drive device 53 arranged in the lower part.

The UV lamp 54 is arranged at an upper position facing the base 52. This UV lamp 54
Is for irradiating the individualized wafer 2A mounted on the base 52 with ultraviolet rays (UV). A reflector 55 is disposed above the UV lamp 54, and is configured to irradiate the individualized wafer 2A mounted on the base 52 with uniform ultraviolet rays. Further, the reflector 55 is configured to be able to irradiate the wafer 2 </ b> A after being diced with ultraviolet light from substantially vertically above.

The solvent nozzle 56 is a nozzle for ejecting the solvent 61 to the wafer 2A after being diced, which is mounted on the base 52. The solvent 61 has a property of dissolving the adhesive 8. As described above, since the base 52 is configured to rotate, the solvent 61 discharged from the solvent nozzle 56 is discharged.
Are supplied to the entire surface of the base 52.

The degassing suction nozzle 57 is connected to a suction device (not shown). This degassing suction nozzle 57
Is for removing volatile components generated from the adhesive 8 by suction under a reduced pressure atmosphere as described later.

Further, the heater 58 has a function of accelerating the degassing process by heating the individualized wafer 2A mounted on the base 52. Although schematically shown in the figure, the degassing suction nozzle 57 is configured to be able to suck all the volatile components of the adhesive 8 generated from the entire surface of the wafer 2A after singulation.

In the adhesive removing device 50A having the above structure, the processing for removing the adhesive 8 applied to the protective tape 3 as described above is carried out. As shown in FIG. 6 (C),
When the protective tape 3 is adhered to the wafer 2, the adhesive 8
Is sandwiched between the protective tape 3 and the wafer 2 and is not exposed to the outside (exactly on the side surface, but it can be ignored because it is a minute area).

However, by performing the back grinding process with the grinder device 10, the wafer 2
When the wafer 2A is diced into individual pieces, a portion where the adhesive 8 is exposed is generated between the adjacent semiconductor elements 60.
Therefore, when the backside etching processing is performed on the wafer 2A after the separation in this state in the backside etching apparatus 20, the monomer / polymer component of the adhesive 8 is evaporated, and the evaporated component or active species reacts with the reaction product. As described above, the fogging occurs due to the accumulation on the surface of the semiconductor element 60.

Therefore, in this embodiment, the grinder device 10 is used.
An adhesive removing device 50A for removing the adhesive 8 is provided between the semiconductor chip 60 and the backside etching device 20.
It is configured to prevent fogging on the surface of the.
The specific operation of the adhesive removing device 50A will be described below.

When the separated wafer 2A is vacuum-chucked to the base 52, the base 52 is rotationally driven by the driving device 53. As a result, the separated wafer 2A also rotates together with the base 52. Further, a solvent (a solvent capable of dissolving the adhesive agent 8. For example, alcohol) is ejected from the solvent nozzle 56 toward the wafer 2A after being divided into individual pieces.

As a result, a liquid film of the solvent 61 is formed on the surface of the separated wafer 2A as shown in FIG. 7 (F). The solvent 61 enters the gap between the adjacent semiconductor elements 60, so that the adhesive 8 is dissolved by the solvent 61 (this process is referred to as a dissolution process). In this dissolution process, by supplying a large amount of the solvent 61, the adhesive 8 can be removed efficiently and reliably in a short time.

However, since the distance between the adjacent semiconductor elements 60 is narrow and the thickness of the adhesive 8 varies, the adhesive 8 may partially remain even after the dissolution treatment (this remaining The adhesive 8 is referred to as a residual portion 8a). FIG. 7 (G) shows the wafer 2A after singulation, which has been subjected to the melting process. The figure shows a state in which the residual portion 8a is partially generated.

Normally, it is unlikely that the residual portion 8a will cause the above-mentioned fogging of the semiconductor element 60, but in the present embodiment, in order to ensure the reliability, a treatment of irradiating ultraviolet rays with the UV lamp 54 after the melting treatment is performed. (Hereinafter, this treatment is referred to as UV irradiation treatment). FIG. 7H shows a state in which the wafer 2A after being diced is subjected to UV irradiation processing. This UV irradiation treatment is performed for the purpose of irradiating the residue portion 8a with ultraviolet rays.

As described above, the adhesive 8 is an ultraviolet curable adhesive, and is cured by performing UV irradiation treatment. Therefore, the residual portion 8a is also cured by performing the UV irradiation treatment. In addition, at the position where the residual portion 8a does not remain due to the dissolution treatment, the side surface of the adhesive 8 (see FIG.
In (H), the position indicated by arrow A) is also cured. Thus, the residual portion 8a is cured (at least the surface of the residual portion 8a is cured), and the exposed side surface A of the adhesive 8 is cured, so that the monomer / polymer component is removed from the adhesive 8 and the residual portion 8a. Can be prevented from evaporating.

Next, after returning to normal pressure once, the individual wafer 2A is fixed to the base 52 by a vacuum chuck provided on the base 52. When the separated wafer 2A is mounted in the adhesive removing device 50A in this manner, first, a vacuum device (not shown) is activated to depressurize the inside of the device main body 51. As a result, the monomer / polymer component contained in the adhesive 8 is evaporated, and the evaporated monomer / polymer component is sucked by the degassing suction nozzle 57 and removed to the outside (this process is called degassing process). ). At this time, in this embodiment, since the heater 58 and the heating treatment are both performed together with the depressurization treatment, the monomer / polymer component contained in the adhesive 8 can be efficiently evaporated.

FIG. 7 (I) shows a state where the degassing process is being performed. In this embodiment, since the heater 58 is provided to perform the degassing process under the reduced pressure heating environment, it is possible to volatilize the monomer / polymer component from the adhesive 8 positively, and to perform the efficient degassing process. Can be implemented. When the above degassing process is completed, the vacuum pump is stopped and the inside of the apparatus main body 51 is returned to normal pressure.

In this embodiment, the adhesive removing device 5
At 0A, the degassing process, the dissolving process, and the UV irradiation process are all performed. However, when removing the adhesive 8, these three treatments do not necessarily have to be performed, and may be selectively performed depending on the type, characteristics, thickness, etc. of the adhesive 8.

The series of processes described above is applied to the adhesive removing device 50.
By carrying out in A, the adjacent semiconductor element 6
The adhesive 8 located between 0 is removed or cured. Therefore, in the backside etching process performed in the backside etching device 20 subsequent to the adhesive removal process in the adhesive removal device 50A, the monomer / polymer component does not evaporate from the wafer 2A after being diced, and thus the semiconductor It is possible to reliably prevent fogging on the surface of the element 60.

By the way, in the above-mentioned embodiment, the adhesive removing device 50A has a structure independent of the grinder device 10 and the backside etching device 20, and is arranged between the respective devices 10, 20. However, the adhesive removal device does not necessarily have to be configured independently of the grinder device 10 and the backside etching device 20, and may be configured to be integrated with each device 10, 20. 9 to 11 show semiconductor manufacturing apparatuses 1B to 1D which are first to third modifications of the semiconductor manufacturing apparatus 1A described above.

The semiconductor manufacturing apparatus 1B according to the first modification shown in FIG. 9 has an adhesive removing device 50 in the grinder device 10.
This is a configuration in which B is provided. As is clear from the above description, the adhesive removing process by the adhesive removing device 50B needs to be performed after the back grinding process is completed. Therefore, in the configuration of this modified example, a configuration in which the adhesive removing device 50B is provided integrally with the water cleaning / drying unit 14 shown in FIG. 2 is conceivable.

The semiconductor manufacturing apparatus 1C according to the second modification shown in FIG. 10 has a structure in which an adhesive removing device 50C is provided in the backside etching device 20. Similar to the above, the adhesive removing process by the adhesive removing device 50C needs to be performed before the backside etching process. Therefore, in the configuration of the present modification, the chamber 22 is provided with an adhesive removal chamber, the adhesive removal process is performed in the adhesive removal chamber before the backside etching process, and then the singulated wafer 2A is XYZ. It is necessary to transport the wafer to the table 28 and perform backside etching.

Further, in a semiconductor manufacturing apparatus 1D according to a third modification shown in FIG. 11, both the grinder apparatus 10 and the backside etching apparatus 20 have adhesive removing devices 50D and 5D.
This is a configuration provided with 0E.

As described above, the adhesive removing process is composed of the degassing process, the dissolving process, and the UV irradiation process. However, when the three types of processing are combined and performed, the adhesive removing device 50 described above is used.
There are processes that can be used and processes that cannot be used in A to 50E. FIG. 12 is a diagram collectively showing this combination. In the figure, A indicates a process that can be specified in the grinder device 10, and B indicates a process that can be used in the backside etching device 20. Further, ◯ and X described in the rightmost column indicate whether or not the combination can be applied as a semiconductor manufacturing apparatus.

[0085]

As described above, according to the present invention, since the adhesive exposed from the tape is removed by providing the adhesive removing device, the monomer / polymer component of the adhesive is removed from the tape during depressurization treatment or the like. It is prevented from evaporating, so that it is possible to prevent the deposition of unnecessary substances on the surface of the substrate and fogging of the surface.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a semiconductor manufacturing apparatus (processing apparatus) that is an embodiment of the present invention.

FIG. 2 is an enlarged plan view showing a grinder device that constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 3 is an enlarged front view showing a backside etching apparatus which constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 4 is a configuration diagram showing a transfer device that constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 5 is a configuration diagram showing an adhesive removal device that constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 6 is a view for explaining the adhesive removal method that is an embodiment of the present invention (No. 1).

FIG. 7 is a diagram for explaining the adhesive removal method according to the embodiment of the present invention (No. 2).

FIG. 8 is a diagram for explaining a transfer process performed by a transfer device.

FIG. 9 is a configuration diagram showing a semiconductor manufacturing apparatus which is a first modified example of the present invention.

FIG. 10 is a configuration diagram showing a semiconductor manufacturing apparatus which is a second modified example of the present invention.

FIG. 11 is a configuration diagram showing a semiconductor manufacturing apparatus that is a third modified example of the present invention.

FIG. 12: Solvent removal, UV performed by the adhesive removal device
It is a figure which shows the combination of irradiation and degassing.

[Explanation of symbols]

1A-1D Semiconductor manufacturing equipment 2 wafers 2A wafer after singulation 3 protective tape 6 frames 7 Half cut part 8 adhesive 10 Grinder equipment 13 Chuck table 16 Wafer transfer robot 17 Wafer holder 20 Backside etching equipment 24 gas introduction pipe 25 nozzles 26 magnetron 30 transfer device 31 Receiving stage 32 Alignment device 33 Frame mounting device 34 Protective tape peeling device 40 Conveyor 50A to 50D adhesive removing device 54 UV lamp 56 solvent nozzle 57 Suction nozzle for degassing 60 Semiconductor element 61 solvent

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Koji Honma             2-703 Tateno, Higashiyamato-shi, Tokyo Stock             Company Chemitronics F term (reference) 5F004 AA01 AA16 BB05 BC08 DB01                       DB23 EA10 EA28 EA38 EB08                       FA08

Claims (6)

[Claims] 1. A grinder device for performing a backside grinding process and a singulation process for a substrate adhered to a tape with an adhesive, and a backside etching device for etching a backside of the substrate ground by the grinder device. A processing apparatus provided with an adhesive removing device for removing the adhesive exposed from the tape. 2. The processing apparatus according to claim 1, wherein the adhesive removing device is configured independently of the grinder device and the backside etching device. 3. The processing device according to claim 1, wherein the adhesive removing device is provided in the grinder device. 4. The processing apparatus according to claim 1, wherein the adhesive removal device is provided in the backside etching device. 5. The processing apparatus according to claim 1, wherein the adhesive removing device is a first means for removing the adhesive using at least a solvent, and the ultraviolet irradiation is performed. A processing apparatus comprising any one of a second means for curing the adhesive and a third means for removing volatile components remaining in the adhesive. 6. A grinding step of performing a backside grinding process on a plurality of individualized substrates adhered to a tape with an adhesive, and removing the adhesive exposed from the tape after the completion of the grinding step. And a backside etching step of performing a backside etching process for further etching the back surface of the substrate that has been subjected to backside grinding processing after the adhesive removal step is completed. A method for removing an adhesive, characterized by: