JP2003179023A - Processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a processing apparatus which includes a backside etching apparatus for etching a backside of a board as a component thereof and by which the backside of the board can be subjected to a backside grinding and a backside etching efficiently. <P>SOLUTION: This processing apparatus has an in-line structure comprising a grinding apparatus 10 which subjects a backside 2b of a wafer 2 having a protective tape 3 stuck to a circuit forming surface 2a thereof, a backside etching apparatus 20 which subjects the backside 2b subjected to the backside grinding by the grinding apparatus 10, and a transfer apparatus 30 which transfers the wafer 2 onto a dicing tape 5 and removes the protective tape 3 from the wafer 2. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus, and more particularly to a processing apparatus including a backside etching apparatus for etching the back surface of a substrate as a constituent element.

As electronic devices are becoming smaller and thinner,
Further thinning is required for semiconductor elements used in electronic devices. Further, development of a stacked semiconductor device in which a plurality of semiconductor elements are stacked and housed in a single package is also in progress, and there is an increasing demand for thinner semiconductor elements. The thickness of the conventional semiconductor element is 200 to 25
The thickness was about 0 μm, but recently, a semiconductor element having a thickness of about 50 μm has been produced, and further reduction in thickness has been promoted.

[0003]

2. Description of the Related Art Generally, a plurality of semiconductor elements are collectively formed on a circuit forming surface which is a surface of a silicon wafer (substrate). The wafer having the semiconductor element formed on the circuit formation surface is subjected to the processing of grinding the back surface in order to reduce the thickness.

First, the wafer is mounted on a grinder apparatus and a back grinding process is performed. In this back grinding process, a rotating abrasive is pressed against the back surface of the wafer (the surface opposite to the circuit forming surface) to grind the wafer to reduce the thickness of the wafer to a predetermined thickness.

At this time, since the circuit forming surface of the wafer is a delicate surface that has been finely processed, a protective tape is previously attached to the circuit forming surface in order to protect it. An ultraviolet curable adhesive is applied to the protective tape, and the protective tape is attached to the circuit forming surface of the wafer by this adhesive.

When the back grinding process by the grinder device is completed, the wafer is subsequently mounted on the transfer device. In this transfer device, first, the protective tape attached to the circuit formation surface is irradiated with ultraviolet rays to cure the ultraviolet curable adhesive. As a result, the adhesive strength of the adhesive decreases, and the protective tape can be peeled off from the wafer without damaging the circuit formation surface.

The transfer device adheres the wafer to the dicing tape arranged on the ring-shaped frame, and then peels the protective tape from the circuit forming surface. At this time, the transfer device rotates the wafer upside down. As a result, the circuit-formed surface of the wafer is in the state of facing upward when it is attached to the dicing tape. Therefore, when dicing the wafer into individual semiconductor elements, the dicing process can be performed with the alignment mark formed on the circuit formation surface as a reference.

By the way, fine cracks are formed on the back surface of the wafer which has been subjected to the back grinding process (mechanical grinding process) as described above. There is a possibility that a wafer (semiconductor element) may be damaged as a starting point. This problem becomes more serious as the wafer becomes thinner.

Therefore, after the back grinding process by the grinder device is completed, the wafer is not mounted on the transfer device immediately but on the back side etching device and the etching process is performed on the back surface of the wafer (hereinafter, Backside etching treatment) may be performed. By performing this backside etching process, it is possible to remove cracks generated on the back surface of the wafer and further reduce the thickness of the wafer. Even in this backside etching process, a protective tape is attached to the circuit forming face to protect the circuit forming face of the wafer, and the backside etching process is performed in this attached state.

[0010]

However, conventionally, although there is a grinder device and a transfer device which are in-line, the backside etching device has an independent structure. Therefore, after the back grinding process by the grinder device is completed, it cannot be directly mounted on the back side etching device.

Therefore, the wafers that have undergone the back-grinding process in the grinder apparatus are first stored in a transfer cassette, and then the cassette is manually carried to the backside etching apparatus and then mounted on the backside etching apparatus. Things were being done.

Further, when the backside etching process is completed, the backside etching device and the transfer device are not in-line, so that the wafer after the backside etching process is put into the cassette again, and the wafer is manually transferred to the transfer device. It was carried to the transfer device and then mounted on the transfer device.

As described above, since the backside etching device is not inline with the grinder device and the transfer device in the related art, the processing time is increased because the wafer is stored in the carrying cassette and the wafer is taken out a plurality of times. There is a problem in that the production efficiency of the semiconductor device is reduced due to the increase in length.

Further, it is considered that fine cracks may occur on the wafer after the back-grinding process is completed, and the wafers thus cracked are repeatedly stored and taken out as described above. When it is carried out, there is a problem that the crack extends and eventually the wafer breaks. Further, when the wafer is thinned by the back grinding process, the wafer is warped due to stress.

The present invention has been made in view of the above points, and it is an object of the present invention to provide a processing apparatus capable of efficiently performing a backside grinding process and an etching process performed on a backside of a substrate. To do.

[0016]

In order to solve the above problems, the present invention is characterized by taking the following means.

According to a first aspect of the present invention, there is provided a processing apparatus which grinds a back surface of a substrate having the first tape adhered to the circuit surface side, and a back surface of the substrate which is ground by the grinder apparatus. A backside etching device for processing and a transfer device for separating the substrate from the first tape and transferring the substrate to the second tape are inline.

According to the above invention, since the grinder device, the backside etching device, and the transfer device are in-line, it is not necessary to provide a cassette for storing the substrate for each device. Further, it becomes possible to share the transfer device for transferring the substrate among the respective devices, and it is possible to simplify the configuration of the entire processing device and reduce the device cost.

The invention according to a second aspect is the processing apparatus according to the first aspect, wherein the backside etching apparatus performs the etching process by plasma etching, wet etching, chemical mechanical polishing, and partial plasma etching. It is characterized by using one of the methods.

As in the invention described above, the etching process performed by the backside etching apparatus can use any one of plasma etching, wet etching, chemical mechanical polishing, and partial plasma etching. At this time, when plasma etching is used, highly accurate etching can be performed. When partial plasma etching is used,
Even if the substrate has local unevenness, this can be dealt with, and an etching surface having high flatness can be formed.

According to a third aspect of the present invention, in the processing apparatus according to the first or second aspect, the grinder device, the backside etching device, and the transfer device are arranged in this order from the upstream side in the transport direction of the substrate. It is characterized by having an in-line configuration by arranging in.

When the processing apparatus is inlined as in the above invention, the grinder apparatus, the backside etching apparatus and the transfer apparatus are arranged in this order from the upstream side with respect to the substrate transport direction so as to follow the processing procedure of the substrate. Is desirable.

According to a fourth aspect of the present invention, in the processing apparatus according to any one of the first to third aspects, the operations of the grinder device, the backside etching device, the transfer device, and the transfer device are performed. It is characterized in that a control device for controlling the overall operation is provided.

According to the above-described invention, the operations of the grinder device, the backside etching device, the transfer device, and the transfer device are controlled by the control device in a centralized manner. Can be carried. Therefore, since the substrate can be transported according to the processing status of each device, the processing efficiency of the entire processing device can be improved.

According to a fifth aspect of the present invention, in the processing apparatus according to the fourth aspect, the control device is provided in the backside etching device.

The backside etching apparatus has a longer substrate processing time than other apparatuses. Therefore, by providing a control device in the backside etching device as in the above invention, it is possible to easily adjust the processing speed with other devices.

The invention according to claim 6 is the processing apparatus according to any one of claims 1 to 5, wherein an ultraviolet curable adhesive is used to adhere the substrate to the first tape. At the same time, the backside etching apparatus is provided with an ultraviolet irradiating device for irradiating the ultraviolet curable adhesive disposed on the first tape with ultraviolet light.

According to the above invention, since the ultraviolet irradiation device is provided in the backside etching device, the manufacturing process can be stabilized by performing the etching step after the adhesive is solidified by the ultraviolet irradiation. . Further, the substrate can be sent to the transfer device after weakening the adhesive force of the ultraviolet curable adhesive by irradiating with ultraviolet rays.
This makes it possible to easily perform the process of separating the substrate from the first tape in the transfer device.

The invention according to claim 7 is the processing apparatus according to claim 6, wherein the backside etching device performs both an etching process on the back surface of the substrate and an ultraviolet irradiation process on the substrate by the ultraviolet irradiation device. First to carry out
And a second processing mode in which only the ultraviolet irradiation processing on the substrate by the ultraviolet irradiation device is performed and the etching processing on the back surface of the substrate is not performed.

According to the above-mentioned invention, in the second processing mode, only the ultraviolet irradiation processing is performed on the substrate and the etching processing is not carried out. Therefore, the first processing mode and the second processing mode can be carried out in parallel. Is. That is, while the backside etching device is performing the etching process on the substrate, another substrate is carried into the ultraviolet irradiation device and subjected to the ultraviolet irradiation process, and the ultraviolet-irradiated substrate is transferred to the next device. It becomes possible to carry. Therefore, by appropriately combining and carrying in a substrate on which etching processing is performed and a substrate on which etching processing is not performed, it is possible to improve the efficiency of the entire processing apparatus and improve the throughput of substrate processing. it can.

The invention according to claim 8 is the processing apparatus according to any one of claims 1 to 7, wherein information on the substrate is written on the first tape or the substrate, or the substrate is written. The first tape on which information regarding the information is previously written is disposed on the substrate, and the grinder device, the backside etching device, and the transfer device are provided with means for reading the information. It is a thing.

According to the above invention, each device reads the information written on the first tape or the substrate, and performs the processing on the substrate based on the read information. Therefore, even when different processing is required for each substrate, it is possible to reliably perform the predetermined processing on each substrate with a simple configuration.

[0033]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings.

1 and 2 show a semiconductor manufacturing apparatus 1 as a processing apparatus which is an embodiment of the present invention. Further, FIG. 3 is a diagram for explaining a process performed on the wafer 2 by the semiconductor manufacturing apparatus 1.

The semiconductor manufacturing apparatus 1 according to the present invention uses the back surface 2 of the wafer 2 to reduce the thickness of the manufactured semiconductor element.
This is an apparatus for performing back grinding processing and back side etching processing on b. Therefore, as shown in FIG. 1, the semiconductor manufacturing apparatus 1 according to the present embodiment has a grinder device 10, a backside etching device 20, a transfer device 30, a transfer device 40, and an ultraviolet irradiation device 50.
(Hereinafter, referred to as UV irradiation device) and the like. The present embodiment is characterized in that the grinder device 10, the backside etching device 20, and the transfer device 30 are inlined, as will be described later in detail. Further, the wafer 2 is a grinder device 10,
The backside etching device 20 and the transfer device 30 are conveyed in this order, and a predetermined process is performed in each of the devices 10, 20, 30.

First, prior to the description of each of the devices 10, 20, 30, 40, 50 constituting the semiconductor manufacturing apparatus 1, the wafer 2 processed by the semiconductor manufacturing apparatus 1 will be described. The wafer 2 is a semiconductor substrate such as silicon. A protection tape 3 is attached to the circuit forming surface 2a of the wafer 2 as shown in FIG. The protective tape 3 is a resin tape and has an ultraviolet curable adhesive (hereinafter,
It is affixed to the circuit forming surface 2a using a UV curable adhesive). Further, the thickness of the protective tape 3 is set to a thickness capable of protecting the circuit forming surface 2a in a back grinding process and a back side etching process described later.

Further, the protective tape 3 is provided with an ID display section 4 as shown in FIG. In this embodiment, a bar code is used as the ID display unit 4.
However, the ID display unit 4 is not limited to the barcode, and another information recording method may be used as long as predetermined information is recorded.

The ID display section 4 has the ID display section 4
Processing information (so-called recipe) for the wafer 2 provided with is recorded. That is, by reading the ID display unit 4 and decoding the ID display unit 4, it is possible to know the processing contents and processing conditions to be performed on the wafer 2 (hereinafter collectively referred to as ID information). Here, the processing content is a specific procedure of processing to be performed on the wafer 2, and is specifically information such as whether or not to perform backside etching processing. Further, the processing conditions are, for example, a processing time, the number of times of scanning, a scanning speed, a kind and a flow rate of gas, an output of plasma, and the like, taking a backside etching processing performed by a backside etching apparatus 20 described later as an example.

The wafer 2 provided with the protective tape 3 having the above-mentioned structure usually has a thickness of about 600 μm, and if it is left as it is, the thickness of the semiconductor element formed from the wafer 2 becomes large. Therefore, the circuit forming surface 2
After the circuit is formed on a, the back surface 2b of the wafer 2 (the surface opposite to the circuit formation surface) is polished to reduce the thickness of the wafer 2. In the semiconductor manufacturing apparatus 1, the back surface 2b is back-ground by mechanical grinding in the grinder apparatus 10, and then the back surface 2b is back-side etched in the back side etching apparatus 20, so that the wafer 2 has a predetermined thickness ( For example 50
It is configured to be thinned to about (μm).

Next, the grinder device 10 will be described. As shown in FIG. 3B, the grinder device 10 is a device for back grinding the back surface 2b of the wafer 2. This grinder device 10 is, as shown in FIG.
1, a positioning device 12, a chuck table 13, a water cleaning / drying unit 14, a processed wafer cassette 15, a wafer transfer robot 16, and the like.

The wafer 2 having the protective tape 3 adhered to the circuit forming surface 2 a is stored in the unprocessed wafer cassette 11 of the grinder device 10. The wafer 2 stored in the unprocessed wafer cassette 11 is taken out from the unprocessed wafer cassette 11 by the wafer transfer robot 16 and first mounted on the alignment device 12.

The grinder device 10 has a wafer transfer robot 16 having a wafer holder 17 at its tip,
The wafer transfer robot 16 is driven to transfer the wafer 2 in the grinder apparatus 10. The wafer holder 17 is configured to hold the wafer 2 by suction. Therefore, when the wafer 2 is transferred by the wafer transfer robot 16, the wafer 2 is held by the wafer holding unit 17 by the suction force of the wafer holding unit 17, and the wafer 2 does not drop during the transfer.

The alignment device 12 randomly performs alignment processing of the wafers 2 stored in the unprocessed wafer cassette 11. Specifically, the alignment device 12 includes an orientation flat / detector for detecting an orientation flat or notch of the wafer 2.
Notch detecting means (not shown) is provided, and the wafer 2 is displaced based on the detection result of the orientation flat / notch detecting means. As a result, the wafer 2 is aligned.

Further, the alignment device 12 is provided with an ID identification device 52. Therefore, the ID display unit 4 provided on the protective tape 3 of the wafer 2 as described above is
It is read by the identification device 52. The read ID information of the wafer 2 is sent to the CPU 19 (see FIG. 1) that controls the driving of the grinder device 10. CPU19
Determines various parameters necessary for the back-grinding process such as back-grinding time (rough grinding time, finish grinding time) based on the ID information transmitted from the ID identification device 52.

The wafer 2 aligned by the alignment device 12 is transferred to the chuck table 13 by the wafer transfer robot 16. Chuck table 13
Has a rough grinding section 13A, a finish grinding section 13B, and a ground surface brush cleaning section 13C.

The rough grinding portion 13A is a portion for performing the rough surface grinding on the back surface 2b of the wafer 2, and the finish grinding portion 13B is a portion for performing the finish grinding on the back surface 2b of the wafer 2. Further, the ground surface brush cleaning unit 13C is a unit for brush cleaning the back surface 2b of the wafer 2. Therefore, on the upper part of the rough grinding portion 13A, a grinding material 18D for rough surface grinding (for example, roughness # 3 is supported by the spindle 18A.
60), but the spindle 1 is located above the finish grinding section 13B.
A grinding material 18E (for example, roughness # 2000) for finish grinding supported by 8B is provided. A cleaning brush 18F supported by a spindle 18C is arranged above the grinding surface brush cleaning section 13C. Each of the spindles 18A to 18C is configured to rotate by a motor (not shown), and is further configured to be movable in the circumferential direction by a moving mechanism (not shown).

The wafer 2 aligned by the alignment device 12 as described above is first mounted on the rough grinding section 13A by the wafer transfer robot 16, and the rear surface 2b is roughly ground by the abrasive 18D. When this rough grinding is completed, the wafer transfer robot 16 moves the wafer 2 to the rough grinding unit 1
It is moved from 3A to the finish grinding section 13B. Then, finish grinding is performed on the back surface 2b after the rough grinding by the abrasive 18E. Upon completion of each of the above grinding processes, the chuck table is rotated and the wafer 2 is moved to the ground surface brush cleaning unit 13C. The grinding surface brush cleaning unit 13C cleans the grinding surface with a brush. In addition, the above rough surface grinding and finish grinding. The brush cleaning can be performed in parallel, so that the chuck table 13 can be simultaneously processed for three wafers 2.

Further, the above-mentioned grinder device 10 carries out the back grinding process with the wafer 2 adhered to the protective tape 3. The protective tape 3 functions as a cushioning material during the back grinding process,
The external force applied to is relaxed.

The wafer 2 which has undergone the back grinding process is transferred to the water cleaning / drying unit 14 by the wafer transfer robot 16. Wafer 2 is washed with this water /
A water washing process and a drying process are performed in the drying unit 14 to remove dust adhering to the surface. When this process is completed, the wafer 2 is stored in the processed wafer cassette 15.

The wafer 2 housed in the processed wafer cassette 15 is delivered to the transfer device 40 by a delivery device (not shown). The transfer device 40 is, for example, a conveyor, and transfers the wafer 2 back-ground by the grinder device 10 to the left in FIG. The transfer device 40 has a CPU 41 for controlling the transfer speed of the wafer 2 and the like, and has the above-mentioned ID display section I
An ID identification device 54 for reading D is provided.

By the way, in the above-described back-grinding processing, a mode in which the thickness of the wafer 2 is ground to a predetermined thickness of the semiconductor element (hereinafter, this processing is referred to as a first processing mode) and a predetermined thickness of the semiconductor element is set. It is configured such that any of the modes (hereinafter, this process is referred to as a second processing mode) in which the thickness is increased by a predetermined thickness without being performed (this process is referred to as a second processing mode).

For example, the thickness of a predetermined semiconductor element is 50 μm.
In such a case, in the first processing mode, the wafer 2 is ground to 50 μm only by the back grinding processing. On the other hand, in the second processing mode, the wafer 2 is ground to a thickness of about 70 μm after the back grinding processing,
The remaining 20 μm is the backside etching device 2 described later.
Carry out at 0. When this second processing mode is carried out, it is possible to remove minute cracks generated on the back surface 2a of the wafer 2 in the back grinding process (hereinafter, the backside etching apparatus 20 in this second processing mode will be described). The treatment carried out by is referred to as backside etching treatment).

As the back side etching treatment, either dry etching or wet etching can be used. However, dry etching is preferable from the viewpoint of protecting the circuit forming surface 2a, and among them, plasma etching is preferably used.

The plasma etching may be batch plasma etching in which the entire wafer 2 is simultaneously irradiated with plasma for etching, or partial plasma etching in which the plasma density is partially increased for irradiation. Good. In the collective plasma etching, the entire surface of the wafer 2 is simultaneously etched, which is effective in reducing the time required for the backside etching process (etching time).

However, in the collective plasma etching, the plasma density may not be uniform over the entire surface of the wafer 2. In this case, the etching rate changes depending on the plasma density, and The backside etching process may be unevenly performed. However, by using the partial plasma etching, the backside etching process can be performed over the entire surface of the wafer 2 under optimum etching conditions.

The specific structure of the backside etching apparatus 20 will be described below. The backside etching apparatus 20 according to the present embodiment has a structure in which a UV irradiation device 50 is integrally provided. FIG. 5 shows the backside etching device 20 and the UV irradiation device 50 in an enlarged manner.

The backside etching apparatus 20 is generally configured to have a chamber 22, a processing gas introducing pipe 24, a magnetron 26, an XYZ table 28, a CPU 29, a drive unit 27 and the like. The chamber 22 is connected to an exhaust means such as a vacuum pump so that the inside of the chamber 22 has a predetermined reduced pressure environment. An XYZ table 28 as a mounting table is provided in the chamber 22 and the wafer 2 as the object to be processed is mounted thereon. The XYZ table 28 is used by the drive unit 2.
7 is configured to be movable in X, Y, and Z directions.

A nozzle 25 extending from the gas introduction pipe 24 is arranged above the XYZ table 28. The upper part of the nozzle 25 is connected to the magnetron 26, and the magnetron 2 is connected to the processing gas flowing through the gas introduction pipe.
The high frequency from 6 is irradiated and plasma is generated. Specifically, the microwave radiated from the magnetron 26 activates the raw material gas in the gas introduction pipe above the nozzle 25, and the activated reaction gas is locally radiated from the nozzle 25 to the wafer 2. The wafer 2 is configured to be partially etched by the action of the activated reaction gas. When the wafer 2 may be damaged by directly irradiating the wafer 2 with the plasma, the distance between the irradiation position of the magnetron 26 and the wafer 2 is separated to the distance at which the plasma disappears (for example, 10
0 mm), the damage to the wafer 2 can be reduced.

The portion irradiated with plasma can be changed by driving the XYZ table 28 in the XY directions (horizontal direction) by the driving unit 27 and moving the wafer 2 relative to the nozzle 25. Further, the distance between the nozzle 25 and the wafer 2 can be adjusted by moving the XYZ table 28 in the Z direction (vertical direction).

Further, the CPU 29 centrally controls each of the devices 26, 27, 28 and the like which constitute the backside etching device 20. As a result, the backside etching process on the wafer 2 can be efficiently performed under optimum conditions.

By the way, in the semiconductor manufacturing apparatus 1 according to this embodiment, CPUs (Central Processing Units) 19, 29, 36, 41, 51 are provided in the respective devices 10, 20, 30, 40, 50.
It is configured to have. In addition, each CPU 19, 2
9, 36, 41 and 51 are connected by a communication line.

At this time, the backside etching apparatus 20
The CPU 29 provided in the
U19, 36, 41, 51 are slave CPUs. As described above, the CPU 29 provided in the backside etching apparatus 20 is used as the master CPU because the backside etching process performed by the backside etching apparatus 20 is performed by the other apparatus 10, 30, 40, 50. This is because the processing time is longer than that of each processing. As described above, the CPU 29 provided in the device having a long processing time
By making the main part of the other device 10, 30, 4
It is possible to easily adjust the processing speed between 0 and 50. The main CPU is not limited to the backside etching device 20, but other devices 10,
CPUs 19, 36, 4 provided in 30, 40, 50
It is also possible to use any one of 1 and 54 as the main CPU.

By using the backside etching apparatus 20 having the above structure, the backside 2b of the wafer 2 is backside-etched as shown in FIG.
In the back grinding process described above, the wafer 2
It is possible to remove minute cracks generated on the back surface 2a of the. The backside etching device 2 shown in FIG.
In 0, the wafer 2 is configured to move with respect to the nozzle 25, but the wafer 2 may be moved with respect to the nozzle 25, or both may be moved.

By the way, as described above, the semiconductor manufacturing apparatus 1 according to the present embodiment has the first processing mode (the mode in which the thickness of the wafer 2 is ground to the predetermined thickness of the semiconductor element in the back grinding processing), A second processing mode (a mode in which the thickness of the semiconductor element is not ground to a predetermined thickness in the back grinding process but is slightly larger than the predetermined thickness of the semiconductor element) can be selected. There is. When this first mode is selected, the wafer 2 moves as shown by the one-dot chain line M1 in FIG. That is,
The wafer 2 is not transported to the backside etching device 20, and thus the backside etching process is not performed, but the UV irradiation by the UV irradiation device 50 is performed.
On the other hand, when the second mode is selected, the wafer 2 moves as shown by the broken line M2 in FIG. That is, the wafer 2 is transferred to the backside etching apparatus 20 and subjected to backside etching processing, and then UV irradiation is performed in the UV irradiation apparatus 50.

Here, the wafer 2 by the UV irradiation device 50 is used.
The UV irradiation to the UV curable adhesive is performed on the UV curable adhesive for attaching the wafer 2 and the protective tape 3. UV irradiation cures the UV-curable adhesive, which reduces the adhesive strength. Therefore, by performing UV irradiation on the ultraviolet curable adhesive, the process of removing (peeling) the wafer 2 from the protective tape 3 can be easily performed.

The UV irradiation device 50, as shown in FIG.
It is composed of a base 56, a UV light source 57, a transfer robot 59, and the like. The base 56 is a part on which the wafer 2 transferred from the grinder device 10 by the transfer device 40 is mounted. At the upper position facing the base 56, U
A V light source 57 is provided. Further, a reflector 58 is provided above the UV light source 57, and the UV light source 57
The UV light generated in 1 is uniformly irradiated onto the wafer 2.

The transfer robot 59 receives the wafer 2 from the transfer device 40 and mounts it on the base 56. At this time, the wafer 2 is mounted on the base 56 with the protective tape 3 facing the UV light source 57.

On the side of the base 56, the above-mentioned ID
An ID identification device 53 for reading the display ID is provided. The ID information read by the ID identification device 53 is sent to the CPU 51. The ID information read here includes data indicating whether the wafer 2 is in the first processing mode or in the second processing mode. Therefore, the CPU 51 determines whether the wafer 2 loaded by this ID information is compatible with the first processing mode or the second processing mode.

When the irradiation of the UV light from the UV light source 57 is completed, the wafer 2 in the first processing mode is not transferred to the backside etching apparatus 20, but the transfer apparatus 40.
And is conveyed toward the transfer device 30. On the other hand, the wafer 2 in the second processing mode is transferred to the backside etching apparatus 20 by the transfer robot 59 after being irradiated with UV light.

The UV light irradiation by the UV light source 57 can be carried out in the atmosphere, but the backside etching process is carried out in a reduced pressure environment. Therefore, the chamber 22 facing the UV irradiation device 50 is provided with a transfer opening 61, and the transfer opening 61 has a shutter driving device 62.
A shutter 60 that opens and closes is provided.

The shutter 60 is driven and controlled by the CPU 29, and the transfer robot 59 is controlled by the CPU 5.
Drive control is performed by 1. CPU 19 as described above
Since the CPU 29 is connected to the CPU 29, when the wafer 2 is transferred from the transfer device 40 to the XYZ table 28, the transfer operation of the wafer 2 by the transfer robot 59 and the opening operation of the shutter 60 are smoothly performed. When the wafer 2 is mounted on the XYZ table 28, the shutter driving device 62 closes the shutter 60, and the backside etching process is performed on the wafer 2.

When this backside etching process is completed, the shutter driving device 62 opens the shutter 60 again, and the wafer 2 is backside etched by the backside etching device 2.
0 XYZ table 28 to UV irradiation device 50 base 5
6 is transported. At this time, as described above, the protective tape 3
The direction of the wafer 2 is reversed by the transfer robot 59 so that the wafer 2 faces the UV light source 57.

The wafer 2 mounted on the base 56 is irradiated with UV from the UV light source 57 as described above, and the thermosetting adhesive is cured to reduce its adhesive force. When the irradiation of the UV light by the UV light source 57 is completed, the wafer 2 is returned to the transfer device 40 and transferred toward the transfer device 30.

As described above, the backside etching apparatus 20 is configured to be compatible with the first processing mode and the second processing mode. Further, as is apparent from the above description, the first processing mode and the second processing mode can be performed in parallel by optimizing the mounting / demounting timing of the wafer 2 with respect to the backside etching apparatus 20. Is. Further, even with the wafer 2 to which the second processing mode is applied, the backside etching processing and the UV irradiation processing can be processed in parallel.

That is, while the backside etching apparatus 20 is performing the backside etching processing on the wafer 2, another wafer 2 can be carried into the UV irradiation apparatus 50 and the ultraviolet irradiation processing can be performed. Is. Therefore, the backside etching device 20 (UV irradiation device 5
0), the wafer 2 to which the backside etching process is performed and the wafer 2 to which the backside etching process is not performed are appropriately combined and carried in.
By optimizing the V irradiation processing timing, the efficiency of the backside etching apparatus 20 and the UV irradiation apparatus 50 as a whole can be improved, and the throughput of wafer processing can be improved.

Next, the transfer device 30 will be described.
As shown in FIG. 6, the transfer device 30 includes a receiving stage 3
1, alignment device 32, frame mount device 3
3, and the protective tape peeling device 34 and the like. Each of these devices 31, 32, 33, 34 has a CPU 3
6 and is driven and controlled by the CPU 36. Moreover, as described above, the CPU 3
Reference numeral 6 is connected to a CPU 29 (provided in the backside etching device 20) which serves as a main CPU, and functions as a slave CPU.

As shown in FIG. 3D, the transfer device 30 removes the protective tape 3 from the wafer 2 and attaches the wafer 2 to the dicing tape 5.
Specifically, the backside etching apparatus and the UV irradiation apparatus 50 perform only the UV irradiation processing, or both the backside etching processing and the UV irradiation processing are performed, and the wafer 2 transferred by the transfer apparatus 40 is first received. It is stored on the stage 31.

Wafer 2 stored in receiving stage 31
Then, the alignment device 32 subsequently performs orientation flat / notch alignment processing (positioning processing). In addition, the alignment device 32 includes an ID identification device 55.
Is provided, and the reading process of the ID display portion ID is simultaneously performed in accordance with the alignment process. The read ID information is transmitted to the CPU 36 of the transfer device 30.

The wafer 2 subjected to the alignment process by the alignment device 32 is sent to the frame mount device 33, where the frame mount process is performed. In the frame mounting process, an annular frame 6 on which a dicing tape 5 (adhesive such as a thermosetting adhesive has been applied in advance) as shown in FIG. 3D is prepared in advance, The wafer 2 is attached to the dicing tape 5. The reason why the wafer 2 is reattached to the frame 6 is that the circuit forming surface 2a of the wafer 2 needs to be exposed to the outside in the dicing process performed after the transfer process. That is, in the dicing process, the dicing process is performed using the alignment mark formed on the circuit forming surface 2a as a reference, so that the circuit forming surface 2a on which the alignment mark is formed needs to be the upper surface.

When the wafer 2 is attached to the dicing tape 5 by the frame mount device 33, the frame 6 on which the wafer 2 is mounted is sent to the protective tape peeling device 34. In the protective tape peeling device 34, the protective tape 3 is peeled from the wafer 2 as shown in FIG.
Is exposed. At this time, in this embodiment, the UV irradiation device 50
In step 2, the ultraviolet curable adhesive for adhering the wafer 2 and the protective tape 3 is irradiated with ultraviolet rays to weaken the adhesive force, and then the protective tape 3 is peeled off in the frame mount device 33. Therefore, the peeling process of the protective tape 3 in the protective tape peeling device 34 can be easily performed.

As described above, the transfer device 30 uses the wafer 2
Is transferred from the protective tape 3 (first tape) to the dicing tape 5 (second tape). The wafer 2 whose circuit formation surface 2a is exposed by this transfer process
The (frame 6) is stored in the wafer storage cassette 35.

Semiconductor manufacturing apparatus 1 having the above configuration
1 and 2, a grinder apparatus 10 for grinding the back surface 2b of the wafer 2, a backside etching apparatus 20 for backside etching the back surface 2b ground by the grinder apparatus 10, and a wafer. Two
The transfer device 30 that transfers the protective tape 3 to the dicing tape 5 is inline. Further, the respective devices 10, 20, 30 are arranged such that the grinder device 10, the backside etching device 20, and the transfer device 30 are arranged in this order from the upstream side in the transport direction of the wafer 2.

With this configuration, each device 10,
It is not necessary to provide a cassette for storing the wafer 2 in all 20 and 30. Further, the transfer device 40 for transferring the wafer 2 can be shared by the respective devices 10, 20 and 30, and the overall configuration of the semiconductor manufacturing apparatus 1 can be simplified, and the apparatus cost can be reduced accordingly. be able to.

In the grinder device 10 and the backside etching device 20, the circuit forming surface 2 is used during the back grinding process and the backside etching process.
It is necessary to provide the protective tape 3 in order to prevent the damage of a.

Further, in the semiconductor manufacturing apparatus 1 according to this embodiment, the CPU 1 is provided in each of the devices 10, 20, 30, 40 and 50.
9, 29, 36, 41, 54 are provided, and the CPU 29 provided in the backside etching apparatus 20 is used as a main CPU.
Since it is configured to be connected to other CPUs 19, 36, 41, 54,
The device 10, 2 based on the information transmitted from the device 1, 54
Since 0, 30, 40, and 50 are controlled in a centralized manner, the processing efficiency of the semiconductor manufacturing apparatus 1 as a whole can be improved also by this.

[0086]

As described above, according to the present invention, various effects described below can be realized.

According to the first to third aspects of the present invention, it is not necessary to provide a cassette for storing the substrate for each device, and the transporting device for transporting the substrate can be shared by the respective devices. The overall configuration can be simplified and the device cost can be reduced.

Further, since it is not necessary to provide a device for attaching / detaching the protective tape to / from the substrate for each device, the structure of the entire processing device can be simplified and the cost of the device can be reduced and the efficiency of the entire processing device can be improved. Can be achieved.

According to the invention described in claim 4, since the control device can carry the substrate in consideration of the processing situation in each device, the processing efficiency of the entire processing device is improved. You can

According to the fifth aspect of the present invention, by providing the backside etching device with the control device, it is possible to easily adjust the processing speed with other devices.

According to the sixth aspect of the invention, since the substrate can be sent to the transfer device after weakening the adhesive force of the ultraviolet curable adhesive by the irradiation of ultraviolet rays, the transfer device can transfer the first tape from the first tape. The process of separating the substrate can be easily performed.

According to the seventh aspect of the invention, the efficiency of the entire processing apparatus is improved by appropriately carrying in the substrate to be etched and the substrate not to be etched into the backside etching apparatus. Therefore, the throughput of substrate processing can be improved.

Further, according to the invention described in claim 8, even when different processing is required for each substrate, it is possible to surely perform the predetermined processing on each substrate with a simple structure. it can.

[Brief description of drawings]

FIG. 1 is a configuration diagram of a semiconductor manufacturing apparatus (processing apparatus) that is an embodiment of the present invention.

FIG. 2 is a diagram for explaining two types of wafer transfer modes in the semiconductor manufacturing apparatus according to the embodiment of the present invention.

FIG. 3 is a diagram collectively showing processes performed on a wafer in the semiconductor manufacturing apparatus which is an embodiment of the present invention.

FIG. 4 is an enlarged plan view showing a grinder device that constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 5 is an enlarged front view showing a backside etching apparatus which constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 6 is a configuration diagram showing a transfer device that constitutes a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 7 is a diagram for explaining an ID display unit provided on a protective tape.

[Explanation of symbols]

1 Semiconductor manufacturing equipment 2 wafers 2a Circuit formation surface 3 protective tape 4 ID display 5 dicing tape 6 frames 10 Grinder equipment 13 Chuck table 13A rough grinding part 13B Finish grinding section 13C Grinding surface brush cleaning section 16 Wafer transfer robot 17 Wafer holder 19 CPU 20 Backside etching equipment 24 gas introduction pipe 25 nozzles 26 magnetron 27 Drive 28 XYZ table 29, 36, 41, 51 CPU 30 transfer device 31 Receiving stage 32 Alignment device 33 Frame mounting device 34 Protective tape peeling device 35 Wafer storage cassette 40 Conveyor 50 UV irradiation device

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Koji Honma             2-703 Tateno, Higashiyamato-shi, Tokyo Stock             Company Chemitronics F-term (reference) 5F004 BA20 BB05 BD07 DB01 EA27                       EB08 FA08

Claims (8)

[Claims] 1. A grinder device for grinding the back surface of a substrate having a first tape attached to the circuit surface side, a backside etching device for etching the back surface of the substrate ground by the grinder device, and the substrate. And a transfer device that separates the substrate from the first tape and transfers the substrate to the second tape. 2. The processing apparatus according to claim 1, wherein the backside etching apparatus uses any one of plasma etching, wet etching, chemical mechanical polishing, and partial plasma etching as the etching processing. A processing device characterized by being. 3. The processing apparatus according to claim 1, wherein the grinder device, the backside etching device, and the transfer device are arranged in this order from the upstream side in the transport direction of the substrate, so as to be inlined. A processing device having a configuration. 4. The processing apparatus according to claim 1, further comprising a control device that integrally controls operations of the grinder device, the backside etching device, the transfer device, and the transfer device. A processing device provided. 5. The processing apparatus according to claim 4, wherein the control device is provided in the backside etching device. 6. The processing apparatus according to claim 1, wherein an ultraviolet curable adhesive is used to adhere the substrate to the first tape, and the backside etching apparatus is used. An apparatus for irradiating ultraviolet rays to the ultraviolet-curable adhesive disposed on the first tape is provided. 7. The processing apparatus according to claim 6, wherein the backside etching apparatus performs both the etching processing of the back surface of the substrate and the ultraviolet irradiation processing on the substrate by the ultraviolet irradiation apparatus. And a second processing mode in which only the ultraviolet irradiation processing is performed on the substrate by the ultraviolet irradiation apparatus, and the etching processing on the back surface of the substrate is not performed. 8. The processing apparatus according to claim 1, wherein the information about the substrate is written on the first tape or the substrate, or the information about the substrate is written in advance. A processing apparatus, wherein the first tape is disposed on the substrate, and the grinder device, the backside etching device, and the transfer device are provided with a unit for reading the information.