TW201841209A - Substrate, processing method thereof, apparatus, system, control device, and manufacturing method - Google Patents

Abstract

The invention provides a substrate capable of properly removing a boron mono-film from the substrate, a processing method thereof, an apparatus, a system, a control device, and a manufacturing method. The substrate processing method comprises following steps: mixing a nitric acid, a strong acid stronger than the nitric acid, and water; and contacting the removing solution with a substrate in which a boron mono-film is formed on a film including a silicon-based film so as to remove the boron mono-film from the substrate.

Description

Substrate processing method, substrate processing apparatus, substrate processing system, control apparatus of substrate processing system, manufacturing method of semiconductor substrate, and semiconductor substrate

[0001] The disclosed embodiments relate to a substrate processing method, a substrate processing apparatus, a substrate processing system, a substrate processing system control device, a semiconductor substrate manufacturing method, and a semiconductor substrate.

[0002] Conventionally, a carbon film or the like is used as the hard mask used for the etching treatment of the semiconductor substrate (see Patent Document 1). [0003] In recent years, as a new hard mask material, a boron-based film has been attracting attention. [Prior Art Document] [Patent Document] [0004] [Patent Document 1] JP-A-2000-133710

(Problems to be Solved by the Invention) [0005] Although among the boron-based films, the boron single film has a higher selectivity than the conventional hard mask. However, useful insights into the technique of removing the film-formed boron single film from the substrate have not been obtained. [0006] An embodiment of the present invention provides a substrate processing method capable of appropriately removing a boron single film from a substrate, a substrate processing apparatus, a substrate processing system, a substrate processing system control device, a semiconductor substrate manufacturing method, and a semiconductor substrate. purpose. (Means for Solving the Problem) [0007] A substrate processing method according to an embodiment of the present invention is characterized in that a mixed nitric acid, a strong acid and a water-removing liquid stronger than nitric acid are brought into contact with a boron single film formed on a film containing a lanthanide film. The substrate of the film, whereby the boron single film is removed from the substrate. [Effects of the Invention] According to one aspect of the embodiment, the boron single film can be appropriately removed from the substrate.

[0010] Hereinafter, a substrate processing method, a substrate processing apparatus, a substrate processing system, a substrate processing system control device, a semiconductor substrate manufacturing method, and an embodiment of a semiconductor substrate disclosed in the present invention will be described in detail with reference to the accompanying drawings. Further, the present invention is not limited by the embodiments shown below. [First Embodiment] <Substrate Processing Method> First, an example of a substrate processing method according to the first embodiment will be described with reference to FIGS. 1A to 1D. 1A to 1D are views showing an example of a substrate processing method according to the first embodiment. [0012] The substrate processing method of the present embodiment is a semiconductor substrate (hereinafter simply referred to as "wafer") such as a tantalum wafer having a film including a lanthanoid film. [0013] Here, for the sake of easy understanding, a case is described in which a wafer having only a tantalum oxide film as a lanthanoid film is used, but the wafer may have a film other than the tantalum oxide film. Further, the lanthanide film may be an SiN film or a polysilicon film. [0014] As shown in FIG. 1A, in the substrate processing method of the first embodiment, first, a boron single film 112 (film formation process) is formed on the tantalum oxide film 111 of the wafer W. [0015] The boron single film 112 is a film made of a boron (B) monomer. However, the boron single film 112 may contain unavoidable impurities in a range inevitably mixed, and the unavoidable impurities are inevitably mixed in the film forming process. As an unavoidable impurity, for example, hydrogen (H), oxygen (O), carbon (C), or the like is contained. [0016] Next, as shown in FIG. 1B, in the substrate processing method of the first embodiment, the wafer W (etching process) after the film formation process is etched. Specifically, in the etching process, the boron single film 112 formed in the film formation process is used as a hard mask, and a recess (groove) 113 of, for example, 500 nm or more is formed in the depth direction of the tantalum oxide film 111. [0018] The boron single film 112 is hardly etched under the etching conditions of the tantalum oxide film 111, and the tantalum oxide film 111 can be etched with a high selectivity to the boron single film 112. Therefore, even if the depth of the concave portion 113 is 500 nm or more, it is possible to suppress the opening width b of the concave portion 113 from excessively expanding with respect to the opening width a of the boron single film 112. [0019] Next, as shown in FIG. 1C, in the substrate processing method of the first embodiment, the boron single film 112 is removed from the wafer W after the etching process. Specifically, after the wafer W after the etching process is held (holding process), the removal liquid is brought into contact with the held wafer W, thereby removing the boron single film 112 from the wafer W (removal process). [0021] Here, the removal liquid is a mixed liquid of nitric acid (HNO3), a strong acid stronger than nitric acid, and water (H2O). In the present embodiment, an example in which sulfuric acid (H2SO4) is used as a strong acid will be described. As the strong acid, for example, carborane acid, trifluoromethanesulfonic acid or the like can be used. That is, in the definition of Bronsted, an acid capable of imparting a proton (H+) to nitric acid may be used. Water is, for example, DIW (pure water). Alternatively, water may be substituted or mixed, using an organic acid (carboxylic acid formic acid (HCOOH), oxalic acid ((COOH) 2), acetic acid (CH3COOH), propionic acid (CH3CH2COOH), butyric acid (CH3(CH2)2COOH) , valeric acid (CH3(CH2)3COOH), etc.). [0022] Such a removal liquid is a nitric acid acting as a salt, dehydrating by a strong acid to form a nitro ion, and is separated from the wafer W by reacting with the boron single film 112. Thereby, as shown in FIG. 1D, the boron single film 112 can be removed from the wafer W. As described above, according to the substrate processing method of the first embodiment, the boron single film 112 formed on the tantalum oxide film 111 can be appropriately removed from the wafer W. Further, the above effects can be exhibited as long as the concentration of the sulfuric acid of the removal liquid is 64% by weight or less and the concentration of the nitric acid is 3% by weight or more and 69% by weight or less. More preferably, the concentration of sulfuric acid is 50% by weight or less and the concentration of nitric acid is 3% by weight or more and 69% by weight or less. [0025] In order to improve the removal performance of the boron single film 112, it is important to generate more etchant. For this reason, it is preferable to appropriately adjust the ratio of the indispensable water in the generation of the substance (ion) which becomes an etchant of boron. Here, the usefulness of the water for removing the liquid will be described with reference to FIG. 18. FIG. 18 is a graph showing the relationship between the dilution ratio of the removal liquid and the etching rate of the boron single film 112. In addition, the graph shown in FIG. 18 is a dilution ratio when the horizontal axis is a removal liquid containing 46 wt% of water-diluted sulfuric acid and 3 wt% of nitric acid. Therefore, for example, in the horizontal axis of Fig. 18, "1" is a removal liquid indicating that sulfuric acid is 46% by weight and nitric acid is 3% by weight, and "5 times" means that sulfuric acid is 46% by weight and nitric acid is 3 % by weight. The removal solution was diluted to 5 times. Further, "0 times" means that the mixed liquid of sulfuric acid and nitric acid is not contained. Further, the vertical axis of FIG. 18 is a relative value indicating an etching rate when the maximum value among the measured etching rates is set to 1. The present inventors have found that by diluting the removal liquid at a specific dilution ratio, in other words, by diluting the mixed solution of sulfuric acid and nitric acid to a specific concentration, for example, when the dilution ratio is set to 0 (use) In the case of a mixture of sulfuric acid and nitric acid which does not contain water, or when it is diluted by a specific ratio other than the above-mentioned specific dilution ratio (when a mixture of sulfuric acid and nitric acid is diluted to a concentration other than a specific concentration), it is very useful. A high etch rate is used to remove the boron single film 112. Specifically, as shown in FIG. 18, it is understood that a mixture of sulfuric acid and nitric acid containing 46% by weight of sulfuric acid and 3% by weight of nitric acid is diluted with water by water. 45 or more 1. 8 times or less, a very large etching rate can be obtained in comparison with the case of diluting with other magnification or the case where the dilution ratio is set to 0. More specifically, the above mixture is diluted with water to 0. The etch rate of the boron single film 112 at the time of 9 times is the highest. <Configuration of Substrate Processing System> Next, an example of the configuration of the substrate processing system according to the present embodiment will be described with reference to FIG. 2 . FIG. 2 is a block diagram showing an example of a configuration of a substrate processing system according to the first embodiment. As shown in FIG. 2, the substrate processing system 100 includes a film forming apparatus 200, an etching apparatus 300, and a substrate processing apparatus 1. [0030] The film forming apparatus 200 is an apparatus that performs the above-described film forming process. The film forming apparatus 200 is provided with a film forming processing unit 201. The configuration of the film formation processing unit 201 will be described later with reference to Fig. 3 . In addition, although the illustration is omitted here, the film forming apparatus 200 includes, for example, a mounting portion on which the wafer W is placed or a wafer to be placed on the mounting portion, in addition to the film forming processing unit 201. W is transported to a transport device or the like of the film formation processing unit 201. [0032] The etching apparatus 300 is an apparatus that performs the etching process described above. The etching apparatus 300 is provided with an etching processing unit 301. The configuration of the etching processing unit 301 will be described later with reference to Fig. 4 . In addition to the etching processing unit 301, the etching apparatus 300 includes, for example, a mounting portion on which the wafer W is placed or a wafer W to be placed on the mounting portion. The transfer device to the etching processing unit 301 or the like. [0034] The substrate processing apparatus 1 is an apparatus that performs the above-described holding and removing processes. The configuration of the substrate processing apparatus 1 will be described later with reference to FIGS. 5 and 6 and the like. [0035] The substrate processing apparatus 1, the film forming apparatus 200, and the etching apparatus 300 are connected to the control apparatuses 4, 400, 500, respectively. The control devices 4, 400, and 500 are provided with control units 18, 401, and 501 and memory units 19, 402, and 502, respectively. [0036] The control unit 18, 401, and 501 includes, for example, a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input/output port, or the like, or various circuits. The control unit 18, 401, and 501 control the operations of the substrate processing apparatus 1, the film forming apparatus 200, and the etching apparatus 300 by the CPU using the RAM as a work area to execute the program stored in the ROM. [0037] Further, the program may be a recording medium that is recorded on a computer and can be read by a computer, and is installed in a memory unit of the control device by the recording medium. As the recording medium that can be read by a computer, there are, for example, a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like. The memory unit 19, 402, 502 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a memory device such as a hard disk or a compact disk. <Configuration of Film Forming Processing Unit> Next, an example of the configuration of the film forming processing unit 201 included in the film forming apparatus 200 will be described with reference to FIG. 3 . FIG. 3 is a view showing an example of the configuration of the film formation processing unit 201. [0040] As shown in FIG. 3, the film forming processing unit 201 is a batch type processing device configured to process a plurality of wafers, for example, 50 to 150 wafers at a time, and includes a heating furnace 210 having A tubular heat insulator 211 having a top portion and a heater 212 provided on an inner circumferential surface of the heat insulator 211. [0041] A processing container 220 made of, for example, quartz is inserted into the heating furnace 210. Moreover, the heater 212 described above is disposed to surround the outside of the processing container 220. [0042] Inside the processing container 220, a boat 230 is disposed. The wafer boat 230 is formed of quartz, and is stacked, for example, by stacking 50 to 150 wafers W at a predetermined interval. The wafer boat 230 is lifted and lowered by the elevating mechanism (not shown), and can be carried in and out of the processing container 220. Further, the film forming processing unit 201 has a boron-containing gas supply mechanism 240 that introduces a boron-containing gas such as B2H6 gas as a film forming material gas into the processing container 220, and an inert gas supply mechanism 250. An inert gas used as a purge gas or the like is introduced into the processing container 220. The boron-containing gas supply mechanism 240 includes a boron-containing gas supply source 241 that supplies a boron-containing gas such as B2H6 gas as a film formation source gas, and a film formation gas pipe 242 that is supplied from a boron-containing gas supply source. 241 directs the film forming gas into the processing vessel 220. A flow rate controller 243 and an opening and closing valve 244 are provided in the film forming gas pipe 242. The inert gas supply mechanism 250 includes an inert gas supply source 251 and an inert gas pipe 252 that guides the inert gas from the inert gas supply source 251 to the processing container 220. The inert gas pipe 252 is provided with a flow rate controller 253 such as a mass flow controller and an opening and closing valve 254. The inert gas is a rare gas such as N2 gas or Ar gas. Further, the processing container 220 is connected to the exhaust pipe 261, and the exhaust pipe 261 is connected to the vacuum pump 263 via a pressure adjusting mechanism 262 including a pressure regulating valve or the like. Thereby, the inside of the processing container 220 can be adjusted to a predetermined pressure by the pressure adjusting mechanism 262 while the inside of the processing container 220 is exhausted by the vacuum pump 263. <Configuration of Etch Processing Unit> Next, a configuration of the etching processing unit 301 included in the etching apparatus 300 will be described with reference to FIG. 4 . FIG. 4 is a view showing an example of the configuration of the etching processing unit 301. As shown in FIG. 4, the etching processing unit 301 is a chamber 310 having a hermetic structure in which the wafer W is housed, and a mounting table 320 on which the wafer W is placed in a horizontal state is provided in the chamber 310. The mounting table 320 is provided with a temperature adjustment mechanism 330 that cools or heats the wafer W to a predetermined temperature. On the side wall of the chamber 310, a carry-out port (not shown) for carrying out the wafer W is provided. [0049] At the top of the chamber 310 is provided a shower head 340. The shower head 340 is a connection gas supply pipe 350. The gas supply pipe 350 is connected to the etching gas supply source 370 via a valve 360, and supplies a predetermined etching gas to the shower head 340 from the etching gas supply source 370. The shower head 340 supplies the etching gas supplied from the etching gas supply source 370 into the chamber 310. Further, the etching gas supplied from the etching gas supply source 370 is, for example, CH3F gas, CH2F2 gas, CF4 gas, O2 gas, Ar gas source or the like. [0051] At the bottom of the chamber 310 is an exhaust 390 connected via an exhaust line 380. The pressure inside the chamber 310 is maintained in a reduced pressure state by the exhaust device 390. <Configuration of Substrate Processing Apparatus> Next, an example of the configuration of the substrate processing apparatus 1 will be described with reference to FIG. 5 . FIG. 5 is a view showing a schematic configuration of a substrate processing apparatus 1 according to the first embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, the Y-axis, and the Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is set to the vertical upward direction. As shown in FIG. 1, the substrate processing apparatus 1 includes a carry-in/out station 2 and a processing station 3. The inbound and outbound station 2 is disposed adjacent to the processing station 3. The carry-in/out station 2 includes a carrier placing unit 11 and a transport unit 12. In the carrier mounting portion 11, a plurality of carriers C are placed, and the plurality of carriers C accommodate a plurality of substrates in a horizontal state. In the present embodiment, a semiconductor wafer (hereinafter referred to as a wafer W) is used. The conveying unit 12 is provided adjacent to the carrier placing unit 11 and includes a substrate conveying device 13 and a delivery unit 14 therein. The substrate transfer device 13 is a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 is movable in the horizontal direction and the vertical direction and swirling around the vertical axis, and the wafer holding mechanism 13 transports the wafer W between the carrier C and the delivery portion 14. [0056] The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the transport unit 15. [0057] The conveying unit 15 is provided with a substrate conveying device 17 therein. The substrate transfer device 17 is a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 is a movement in the horizontal direction and the vertical direction and a wrap around the vertical axis, and the wafer holding mechanism performs the transfer of the wafer W between the delivery unit 14 and the processing unit 16 by the wafer holding mechanism. The processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transfer device 17. In the substrate processing apparatus 1 configured as described above, first, the substrate transfer device 13 that carries out the inbound station 2 takes out the wafer W from the carrier C placed on the carrier mounting portion 11, and removes the wafer. W is placed on the interface 14 . The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3, and is carried into the processing unit 16. The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13. <Configuration of Processing Unit> Next, the configuration of the processing unit 16 will be described with reference to FIG. 6 . FIG. 6 is a view showing a schematic configuration of the processing unit 16 of the first embodiment. As shown in FIG. 6, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50. [0063] The chamber 20 is a housing substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50. At the top of the chamber 20 is provided an FFU (Fan Filter Unit) 21. The FFU 21 forms a downflow within the chamber 20. [0064] The substrate holding mechanism 30 includes a holding portion 31, a pillar portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The pillar portion 32 is a member that extends in the vertical direction, and the base end portion is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at the tip end portion. The drive unit 33 rotates the column portion 32 about a vertical axis. In the substrate holding mechanism 30, the pillar portion 32 is rotated by the driving portion 33, whereby the holding portion 31 supported by the pillar portion 32 is rotated, whereby the wafer W held by the holding portion 31 is rotated. [0065] The processing fluid supply unit 40 supplies the processing fluid to the wafer W. The treatment fluid supply unit 40 is connected to the treatment fluid supply source 70. [0066] The recovery cup 50 is disposed so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A liquid discharge port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the liquid discharge port 51 to the outside of the processing unit 16. Further, at the bottom of the recovery cup 50, an exhaust port 52 that discharges the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed. [0067] Next, an example of the configuration of the processing liquid supply system of the processing unit 16 will be described with reference to FIG. 7. FIG. 7 is a view showing an example of a configuration of a processing liquid supply system of the processing unit 16 according to the first embodiment. [0068] For example, as shown in FIG. 7, the processing unit 16 includes a removal liquid supply nozzle 41 and a DIW supply nozzle 42 as a processing fluid supply unit 40. The removal liquid supply nozzle 41 is a nozzle that supplies the removal liquid to the wafer W, and the DIW supply nozzle 42 is a nozzle that supplies the DIW as the cleaning liquid to the wafer W. [0069] The processing fluid supply source 70 is a supply system including a removal liquid supply source 711, a removal liquid supply path 721, a temperature adjustment unit 731, and a valve 741 as a removal liquid. [0070] The removal liquid supply source 711 is a tank that stores a mixed liquid of sulfuric acid, nitric acid, and water, which is a removal liquid. The removal liquid supply path 721 is a pipe that connects the removal liquid supply source 711 and the removal liquid supply nozzle 41. The temperature adjustment unit 731 is provided in the removal liquid supply path 721 and heats the removal liquid flowing through the removal liquid supply path 721. The temperature adjustment unit 731 is, for example, a heater. The valve 741 is provided in the removal liquid supply path 721, and opens and closes the removal liquid supply path 721. When the valve 741 is driven from the closed state to the open state, the removal liquid stored in advance in the removal liquid supply source 711 flows through the removal liquid supply path 721, and is heated by the temperature adjustment unit 731 to supply the removal liquid. The nozzle 41 is supplied to the wafer W. Further, the processing fluid supply source 70 is a supply system including the DIW supply source 712, the DIW supply path 722, and the valve 742 as DIW. Then, by the valve 742 being driven from the closed state to the open state, the DIW is supplied from the DIW supply source 712 to the DIW supply nozzle 42 via the DIW supply path 722, and the DIW is supplied from the DIW supply nozzle 42 to the wafer W. <Specific Operation of Substrate Processing System> Next, an example of a specific operation of the substrate processing system 100 will be described with reference to FIG. 8 . FIG. 8 is a flowchart showing an example of a procedure of substrate processing performed by the substrate processing system 100 according to the first embodiment. The respective processing programs shown in Fig. 8 are executed in accordance with the control of the control units 18, 401, and 501. As shown in FIG. 8, in the substrate processing system 100, first, the wafer W having the tantalum oxide film 111 is carried into the film formation processing unit 201 of the film formation apparatus 200. Then, in the film formation processing unit 201, a film formation process of forming the boron single film 112 on the tantalum oxide film 111 is performed (step S101). Specifically, first, the inside of the processing container 220 is controlled to a predetermined temperature, for example, 200 to 500 ° C, and the wafer boat 230 on which the plurality of wafers W are loaded is inserted into the processing container 220 in an atmospheric pressure state. Vacuuming is performed in this state, and the inside of the processing container 220 is in a vacuum state. Next, the inside of the processing container 220 is regulated to a predetermined low pressure state, for example, 133. 3Pa (1. 0Torr), The temperature of the wafer W is stabilized. In this state, The boron-containing gas supply mechanism 240 introduces a boron-containing gas such as B2H6 gas into the processing container 220. CVD by thermally decomposing a boron-containing gas on the surface of the wafer W, A boron single film 112 is formed on the surface of the wafer W. then, The inert gas is supplied from the inert gas supply mechanism 250 into the processing container 220, In the purification processing container 220, Then, the inside of the processing container 220 is evacuated by the vacuum pump 263. then, The inside of the processing container 220 is returned to atmospheric pressure to end the process. With this, A boron single film 112 is formed on the tantalum oxide film 111 of the wafer W (see FIG. 1A).  [0076] After the wafer W after the film formation process is carried out from the film forming apparatus 200, The etching processing unit 301 is carried into the etching apparatus 300. then, In the etching processing unit 301, The boron single film 112 is used as a hard mask, An etching process of etching the tantalum oxide film 111 of the wafer W is performed (step S102).  [0077] Specifically, After the interior of the chamber 310 is decompressed by the exhaust device 390, An etching gas is supplied from the shower head 340 into the chamber 310, Thereby, the wafer W placed on the mounting table 320 is dry etched. With this, A concave portion 113 is formed on the wafer W (see FIG. 1B).  [0078] After the etching process of the wafer W is carried out from the etching apparatus 300, It is carried into the processing unit 16 of the substrate processing apparatus 1. The wafer W that has been carried into the processing unit 16 is horizontally held by the holding portion 31 while the surface on which the boron single film 112 is formed on the tantalum oxide film 111 faces upward. then, In the processing unit 16, The removal process of removing the boron single film 112 from the wafer W is performed (step S103).  [0079] Specifically, In the removal process, The removal liquid supply nozzle 41 of the treatment fluid supply unit 40 is located above the center of the wafer W. then, By the valve 741 being opened for a predetermined time, The removal liquid is supplied to the wafer W from the removal liquid supply nozzle 41 (see FIG. 1C). The removal liquid supplied to the wafer W is expanded on the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W, The rotation of the wafer W is generated by the driving unit 33 (refer to FIG. 6). With this, The boron single film 112 is removed from the wafer W (refer to FIG. 1D).  [0080] Next, In the processing unit 16, A washing process of washing the surface of the wafer W with DIW is performed (step S104). In such a washing process, The DIW supply nozzle 42 will be located above the center of the wafer W. then, By the valve 742 being opened for a predetermined time, The DIW is supplied from the DIW supply nozzle 42 to the surface of the rotated wafer W, The boron single film 112 removed (stripped) from the wafer W and the removed liquid remaining on the wafer W are washed away by DIW.  [0081] Next, In the processing unit 16, Increasing the rotational speed of the wafer W by a predetermined time, Thereby, the drying process of removing the DIW remaining on the surface of the wafer W and drying the wafer W is performed (step S105). then, The rotation of the wafer W is stopped.  [0082] The wafer W after the drying process is taken out from the processing unit 16 by the substrate transfer device 17. The carrier C placed on the carrier mounting portion 11 is housed in the delivery unit 14 and the substrate transfer device 13 . With this, A series of substrates for one wafer W are processed.  [0083] As above, The substrate processing system 100 of the first embodiment includes: Film forming apparatus 200, The etching apparatus 300 and the substrate processing apparatus 1 are provided. In the film forming apparatus 200, a boron single film 112 is formed on a wafer W (an example of a substrate) having a film including the tantalum oxide film 111. The etching apparatus 300 is a wafer W in which a boron single film 112 is formed by the film forming apparatus 200. The substrate processing apparatus 1 removes the boron single film 112 from the wafer W etched by the etching apparatus 300. and, The substrate processing apparatus 1 is provided with: Holding unit 31, The fluid supply unit 40 and the treatment fluid supply source 70 are processed. The holding portion 31 holds the wafer W. The treatment fluid supply unit 40 and the treatment fluid supply source 70 are made of sulfuric acid, The removal solution of nitric acid and water contacts the wafer W held by the holding portion 31, Thereby, the boron single film 112 is removed from the wafer W.  [0084] Therefore, According to the substrate processing system 100 of the first embodiment, The boron single film 112 can be appropriately removed from the wafer W.  (Second Embodiment) Next, A second embodiment will be described. In addition, In the following description, The same parts as those already explained are attached with the same symbols as those already explained. Duplicate descriptions are omitted.  [0086] FIG. 9 is a view showing an example of a configuration of a processing liquid supply system of the processing unit according to the second embodiment. As shown in Figure 9, The treatment fluid supply source 70A of the second embodiment is provided with a sulfuric acid supply source 713, Sulfuric acid supply route 723, Temperature adjustment unit 733 and valve 743, As a supply system of sulfuric acid.  [0087] The sulfuric acid supply source 713 is a tank that stores sulfuric acid diluted to a predetermined concentration with water (pure water). E.g, The sulfuric acid supply source 713 is stored with sulfuric acid diluted to a concentration of 50%.  The sulfuric acid supply path 723 is a pipe connecting the sulfuric acid supply source 713 and a mixing unit 750 to be described later. The temperature adjustment unit 733 is provided on the sulfuric acid supply path 723. The sulfuric acid flowing through the sulfuric acid supply path 723 is heated. The temperature adjustment unit 733 is, for example, a heater. The valve 743 is provided on the sulfuric acid supply path 723. The sulfuric acid supply path 723 is opened and closed.  [0089] Again, The treatment fluid supply source 70A is provided with a nitric acid supply source 714, Nitric acid supply path 724 and valve 744, As a supply system of nitric acid.  [0090] The nitric acid supply source 714 is a tank that stores nitric acid diluted with water (pure water) to a predetermined concentration. E.g, The nitric acid supply source 714 is stored with nitric acid diluted to a concentration of 69%.  The nitric acid supply path 724 is a pipe that connects the nitric acid supply source 714 to a mixing unit 750 to be described later. The valve 744 opens and closes the nitric acid supply path 724.  [0092] Again, The processing fluid supply source 70A is provided with a DIW supply source 712, DIW supply path 722 and valve 742, As a supply system for DIW.  [0093] The processing unit 16A includes a mixing unit 750 and a removal liquid supply path 760. The mixing unit 750 is a removal liquid that mixes sulfuric acid and nitric acid at a predetermined mixing ratio in a state where the flow rate is maintained to form a mixed liquid. The sulfuric acid is supplied from the sulfuric acid supply path 723 at a predetermined flow rate. This nitric acid is supplied from the nitric acid supply path 724 at a predetermined flow rate. E.g, The mixing section 750 is a 50% strength sulfuric acid: 69% concentration of nitric acid = 10: The ratio of 1 is mixed.  The mixing unit 750 is disposed in the chamber 20 (see FIG. 6) of the processing unit 16A. E.g, The mixing unit 750 is an arm that can be provided in the holding liquid supply nozzle 41.  [0095] The removal liquid supply path 760 is a connection mixing portion 750 and a removal liquid supply nozzle 41, The removal liquid generated in the mixing unit 750 is supplied to the removal liquid supply nozzle 41.  [0096] Second, The removal process of the second embodiment will be described. In the removal process of the second embodiment, After the wafer W after the etching process is held by the holding portion 31, The removal liquid supply nozzle 41 of the processing fluid supply unit 40 is positioned above the center of the wafer W.  [0097] Then, By the valve 743 and the valve 744 being opened for a predetermined time, The sulfuric acid diluted with water is heated by the temperature adjusting unit 733 and the nitric acid diluted with water is introduced into the mixing unit 750 to generate a removing liquid.  [0098] Then, The removal liquid generated in the mixing unit 750 is supplied from the removal liquid supply nozzle 41 to the wafer W. The removal liquid supplied to the wafer W is expanded on the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W, The rotation of the wafer W is generated by the driving portion 33. With this, The boron single film 112 is removed from the wafer W.  [0099] So, The processing unit 16A of the second embodiment includes a processing fluid supply unit 40 and a processing fluid supply source 70A. in particular, The processing unit 16A is provided with: Sulfuric acid supply route 723, Nitric acid supply road 724, The mixing unit 750 and the liquid supply nozzle 41 are removed. The sulfuric acid supply path 723 is a sulfuric acid diluted by water supplied from a sulfuric acid supply source 713 that supplies sulfuric acid diluted with water. The nitric acid supply path 724 is a nitric acid diluted by water supplied from a nitric acid supply source 714 that supplies nitric acid diluted with water. The mixing portion 750 is before supplying the removal liquid to the wafer W. Mix while holding the flow rate: Sulfuric acid diluted by water flowing through the sulfuric acid supply path 723, And nitric acid diluted by water flowing through the nitric acid supply path 724. The removal liquid supply nozzle 41 supplies the removal liquid generated by the mixing unit 750 to the wafer W.  [0100] According to such a processing unit 16A, Then, since the generated removal liquid also holds the flow rate, So reach the wafer W immediately, Therefore, compared with, for example, the case where the removal liquid is generated in advance to be stored in the tank, Fresher, In other words, The removal liquid before the removal performance of the boron single film 112 is lowered can be supplied to the wafer W. therefore, According to the processing unit 16A of the second embodiment, Then, the boron single film 112 can be removed more appropriately.  [0101] In addition, The processing unit 16A does not necessarily have to have the temperature adjustment unit 733. The removal liquid heated by the reaction heat of sulfuric acid and nitric acid may be supplied to the wafer W. In this case, E.g, The temperature change of the removal liquid accompanying the reaction heat after mixing sulfuric acid and nitric acid can be measured in advance by experiments or the like. When the temperature of the removal liquid is within a predetermined range including the maximum value, In order to remove the liquid from contacting the wafer W, It is desirable to optimize the length of the removal liquid supply path 760.  [0102] Again, The processing unit 16A is also capable of generating a higher concentration of the removal liquid than the desired concentration in the mixing unit 750. Supplyed from the removal liquid supply nozzle 41 to the wafer W, And supplying the DIW to the wafer W from the DIW supply nozzle 42, Diluting a high concentration of the removal liquid on the wafer W by DIW, Thereby, a removal liquid of a desired concentration is generated.  [Third Embodiment] FIG. 10 is a view showing an example of a configuration of a processing liquid supply system of a processing unit according to a third embodiment. As shown in Figure 10, The processing unit 16B of the third embodiment includes a DIW supply nozzle 42 and a sulfuric acid supply nozzle 43 (an example of a strong acid supply nozzle) and a nitric acid supply nozzle 44, The processing fluid supply unit 40B is used.  [0104] The sulfuric acid supply nozzle 43 is a nozzle that supplies sulfuric acid to the wafer W, The nitric acid supply nozzle 44 is a nozzle that supplies nitric acid to the wafer W.  [0105] The processing fluid supply source 70B is provided with a sulfuric acid supply source 713, Sulfuric acid supply route 723, Temperature adjustment unit 733 and valve 743, As a supply system of sulfuric acid, The sulfuric acid supply path 723 is connected to the sulfuric acid supply nozzle 43.  [0106] Again, The treatment fluid supply source 70B is provided with a nitric acid supply source 714, Nitric acid supply path 724 and valve 744, As a supply system of nitric acid, The nitric acid supply path 724 is connected to the nitric acid supply nozzle 44.  [0107] Again, The processing fluid supply source 70B is provided with a DIW supply source 712, DIW supply path 722 and valve 742, As a supply system for DIW, The DIW supply path 722 is connected to the DIW supply nozzle 42.  [0108] Second, The removal process in the third embodiment will be described. In the removal process of the third embodiment, After the etched wafer W is held by the holding portion 31, The sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44 of the treatment fluid supply unit 40B are located above the wafer W. then, By the valve 743 and the valve 744 being opened for a predetermined time, The sulfuric acid diluted with water is heated by the temperature adjusting unit 733 and the nitric acid diluted with water is supplied from the sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44 to the wafer W, respectively. The flow rates of sulfuric acid and nitric acid are adjusted by valve 743 and valve 744. And make it a predetermined flow ratio. E.g, The flow ratio of sulfuric acid and nitric acid is adjusted to 10: 1.  [0109] Sulfuric acid and nitric acid supplied to the wafer W are mixed on the wafer W, Thereby, a removal liquid is formed on the wafer W. The generated removal liquid is expanded on the surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W, The rotation of the wafer W is generated by the driving portion 33. With this, The boron single film 112 is removed from the wafer W.  [0110] So, The processing unit 16B of the third embodiment includes a processing fluid supply unit 40B and a processing fluid supply source 70B. in particular, The processing unit 16B is provided with: Sulfuric acid supply route 723, Nitric acid supply road 724, The sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44 are provided. The sulfuric acid supply path 723 is a sulfuric acid diluted by water supplied from a sulfuric acid supply source 713 that supplies sulfuric acid diluted with water. The nitric acid supply path 724 is a nitric acid diluted by water supplied from a nitric acid supply source 714 that supplies nitric acid diluted with water. The sulfuric acid supply nozzle 43 supplies sulfuric acid diluted with water flowing through the sulfuric acid supply path 723 to the wafer W. The nitric acid supply nozzle 44 supplies the nitric acid diluted with water flowing through the nitric acid supply path 724 to the wafer W. then, In the removal process of the third embodiment, sulfuric acid diluted with water and nitric acid diluted with water are supplied to the wafer W held by the holding portion 31. Thereby forming a removal liquid on the wafer W, The boron single film 112 is removed.  [0111] According to such a processing unit 16B, Then, compared with the configuration having the mixing unit 750, The fresher removal liquid that is generated soon can be supplied to the wafer W with a simpler configuration.  (Fourth Embodiment) Next, A fourth embodiment will be described. 11A and 11B are views showing an example of the configuration of the processing unit 16C of the fourth embodiment.  [0113] As shown in FIG. 11A, The processing unit 16C of the fourth embodiment includes the heating unit 60. The heating unit 60 is, for example, a resistance heating heater or a lamp heater. Above the holding portion 31, It is disposed separately from the holding unit 31. In addition, The heating unit 60 may be integrally provided in the holding portion 31. E.g, The heating unit 60 may be incorporated in the holding portion 31.  [0114] Second, The removal process in the fourth embodiment will be described. The removal process of the fourth embodiment is to form a liquid film (liquid film formation process) for removing the liquid on the upper surface of the wafer W after the etching process held by the holding portion 31.  [0115] For example, as shown in FIG. 11A, The removal liquid is supplied from the removal liquid supply nozzle 41 to the wafer W, The wafer W is rotated by the driving unit 33 (refer to FIG. 6). Thereby, a liquid film for removing the liquid is formed on the wafer W.  [0116] In addition, Not limited to the above examples, Sulfuric acid and nitric acid may be supplied from the sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44 to the rotating wafer W, Forming a removal liquid on the wafer W, Thereby, a liquid film for removing the liquid is formed on the wafer W.  [0117] Next, As shown in FIG. 11B, After the liquid film is formed, The state in which the liquid film of the removal liquid is formed on the wafer W is maintained for a predetermined time (maintenance processing). in particular, Stop the rotation of the wafer W, The supply of the removal liquid from the removal liquid supply nozzle 41 to the wafer W is stopped. Thereby, the same removal liquid is left on the wafer W for a predetermined time.  [0118] Thereby, For example, when the rotation of the wafer W is continued and the supply of the removal liquid from the liquid supply nozzle 41 to the wafer W is supplied (that is, the case where the liquid is continuously replaced) is compared, The removal efficiency of the boron single film 112 can be improved. This can be considered because the reactants of boron and the removal solution become etchants. The removal of the boron single film 112 is promoted.  [0119] and, In the maintenance process, The processing unit 16C heats the removal liquid on the wafer W by the heating unit 60. Thereby, the removal liquid on the wafer W is maintained at a constant temperature. With this, It is possible to suppress a decrease in the removal performance caused by a decrease in temperature.  [0120] So, The processing unit 16C of the fourth embodiment is in the removal process, get on: A liquid film forming process of forming a liquid film for removing a liquid on the wafer W held by the holding portion 31, And after the liquid film formation treatment, The state in which the liquid film from which the liquid is removed is formed on the wafer W is maintained for a predetermined period of time. in particular, The processing unit 16C is in the maintenance process, The same removal liquid is allowed to remain on the wafer W for a predetermined time.  [0121] Thereby, Comparing with the case of continuously replacing the removal liquid on the wafer W, The removal efficiency of the boron single film 112 can be improved. and, The amount of the removal liquid can be reduced.  (Fifth Embodiment) Next, A fifth embodiment will be described. FIG. 12 is a view showing an example of a configuration of a substrate processing system according to a fifth embodiment.  [0123] As shown in FIG. 12, The substrate processing system 100D of the fifth embodiment includes a film forming apparatus 200, The etching apparatus 300 and the substrate processing apparatus 1D.  [0124] In the substrate processing system 100D, After the film formation process and before the etching process, The removal liquid is brought into contact with the back surface and the crystal edge portion of the wafer W, Thereby, the prior removal process for removing the boron single film 112 from the back surface and the crystal edge portion of the wafer W is performed.  [0125] The substrate processing apparatus 1D is provided with: Crystal edge processing unit 16D1 Back surface processing unit 16D2 and surface processing unit 16D3. and, The substrate processing apparatus 1D is connected to the control device 4D, Crystal edge processing unit 16D1 The back surface processing unit 16D2 and the surface processing unit 16D3 are controlled by the control device 4D.  [0126] The edge processing unit 16D1 removes the boron single film 112 formed on the crystal edge portion of the wafer W by removing the liquid. here, An example of the configuration of the edge processing unit 16D1 will be described with reference to Fig. 13 . FIG. 13 is a view showing an example of the configuration of the edge processing unit 16D1.  [0127] As shown in FIG. 13, The edge processing unit 16D1 includes a substrate holding mechanism 30D1 and a crystal edge supply unit 80.  [0128] The substrate holding mechanism 30D1 is provided with: Adhering and holding the holding portion 31D1 of the wafer W, The strut member 32D1 supporting the holding portion 31D1, And a drive unit 33D1 that rotates the strut member 32D1. The holding portion 31D1 is an air suction device connected to a vacuum pump or the like. The back surface of the wafer W is adsorbed by the negative pressure generated by the suction of the getter device. Thereby the wafer W is held horizontally. The holding portion 31D1 is, for example, a porous suction cup.  [0129] The edge supply unit 80 is provided at the bottom of a recovery cup (not shown), for example. The removal liquid is supplied to the peripheral portion of the back side of the wafer W. The configuration of the supply system for removing the liquid is, for example, the treatment fluid supply source 70 shown in Fig. 7 or the treatment fluid supply source 70A shown in Fig. 9 .  [0130] The edge processing unit 16D1 is configured as described above, The wafer W is held by the holding portion 31D1, After the wafer W is rotated by the driving portion 33D1, The removal liquid is supplied from the crystal edge supply unit 80 to the peripheral portion of the back side of the wafer W. The removal liquid supplied to the peripheral portion on the back side of the wafer W is wound around the crystal edge portion of the wafer W, The boron single film 112 formed on the crystal edge portion is removed. then, The rotation of the wafer W is stopped.  [0131] In addition, The crystal edge supply unit 80 is connected to a DIW supply source (not shown). After removing the boron single film 112 from the crystal edge portion of the wafer W, The DIW is supplied to the peripheral portion of the back side of the wafer W, and the boron single film 112 remaining in the crystal edge portion and the washing liquid are removed.  [0132] The back surface processing unit 16D2 removes the boron single film 112 formed on the back surface of the wafer W by removing the liquid. here, An example of the configuration of the back surface processing unit 16D2 will be described with reference to Fig. 14 . FIG. 14 is a view showing an example of the configuration of the back surface processing unit 16D2.  [0133] As shown in FIG. 14, The back processing unit 16D2 is provided with: The substrate holding mechanism 30D2 that rotatably holds the wafer W, And being inserted into the hollow portion of the substrate holding mechanism 30D2, The back surface supply unit 90 that supplies the removal liquid to the back surface of the wafer W is supplied.  [0134] On the upper surface of the substrate holding mechanism 30D2, a plurality of grip portions 311 for holding the peripheral edge portion of the wafer W are provided. The wafer W is horizontally held by the plurality of grip portions 311 slightly apart from the upper surface of the substrate holding mechanism 30D2.  [0135] Again, The substrate holding mechanism 30D2 is provided with a driving portion 33D2, The drive unit 33D2 rotates around the vertical axis. then, Rotating by the substrate holding mechanism 30D2, The wafer W held by the substrate holding mechanism 30D2 is rotated integrally with the substrate holding mechanism 30D2.  [0136] The back surface supply portion 90 is a hollow portion that is inserted into the substrate holding mechanism 30D2, The removal liquid is supplied to the center of the back surface of the wafer W. As a structure of the supply system of the removal liquid, For example, the treatment fluid supply source 70 shown in Fig. 7 or the treatment fluid supply source 70A shown in Fig. 9 can be employed.  [0137] The back surface processing unit 16D2 is configured as described above. The wafer W is held by the plurality of grip portions 311 of the substrate holding mechanism 30D2, After the wafer W is rotated by the driving portion 33D2, The removal liquid is supplied from the back surface supply unit 90 to the central portion of the back surface of the wafer W. The removal liquid supplied to the central portion of the back surface of the wafer W is expanded on the back surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. The boron single film 112 formed on the back surface is removed. then, The rotation of the wafer W is stopped.  [0138] In addition, The back surface supply unit 90 is connected to a DIW supply source (not shown). After removing the boron single film 112 from the back surface of the wafer W, The washing process of supplying the DIW to the center of the back surface of the wafer W and washing away the boron single film 112 remaining on the back surface and the removal liquid is also performed.  [0139] The surface treatment unit 16D3 is a boron single film 112 that is removed from the surface of the wafer W. The surface processing unit 16D3 is an applicable processing unit 16, Any of 16A~16C.  [0140] Second, The procedure of the substrate processing in the fifth embodiment will be described. In the substrate processing system 100D of the fifth embodiment, After the film formation process performed by the film forming apparatus 200 is completed, The wafer W after the film formation process is carried into the crystal edge processing unit 16D1 of the substrate processing apparatus 1D. then, In the edge processing unit 16D1, The crystal edge removal processing for removing the boron single film 112 formed on the crystal edge portion of the wafer W is performed.  [0141] Next, The wafer W after the edge removal processing is subjected to the washing treatment and the drying treatment in the crystal edge processing unit 16D1. Moved to the back processing unit 16D2, In the back processing unit 16D2, The back surface removal process of removing the boron single film 112 formed on the back surface of the wafer W is performed.  [0142] Next, After the wafer W after the back surface removal processing is subjected to the washing treatment and the drying treatment in the back surface processing unit 16D2, Moving out from the substrate processing apparatus 1D, It is carried into the etching apparatus 300. then, The etching process is performed on the etching device 300.  [0143] Next, The wafer W after the etching process is carried into the surface processing unit 16D3 of the substrate processing apparatus 1D, The above-described removal processing is performed in the surface treatment unit 16D3, Washing treatment and drying treatment.  [0144] As above, In the substrate processing system 100D of the fifth embodiment, After the film formation process and before the etching process, The removal liquid is brought into contact with the back surface and the crystal edge portion of the wafer W, Thereby, the prior removal process for removing the boron single film 112 from the back surface and the crystal edge portion of the wafer W is performed. With this, The boron single film 112 on the back surface and the crystal grain portion which are not required for the etching treatment can be removed before the etching treatment.  [0145] In addition, Here is the edge removal process, Perform the back removal process, But after the back removal process, The edge removal treatment is performed. also, The crystal edge supply unit 80 and the back surface supply unit 90 may be provided in one processing unit. At the same time, the crystal edge removal treatment and the back surface removal treatment are performed.  [0146] Also, Here, one substrate processing apparatus 1D is provided with a crystal edge supply unit 80, An example of the case of the back surface supply unit 90 and the processing fluid supply unit 40, However, the substrate processing system 100D may also have: a first substrate processing apparatus having a crystal edge supply unit 80 and a back surface supply unit 90, And a configuration of the second substrate processing apparatus having the processing fluid supply unit 40.  (Sixth Embodiment) Next, A sixth embodiment will be described. 15A and 15B are views showing an example of a configuration of a processing unit according to a sixth embodiment.  [0148] As shown in FIG. 15A, The processing unit 16E of the sixth embodiment includes a lid body 1010. The lid body 1010 is disposed above the holding portion 31. The lid body 1010 is opposed to the wafer W held by the holding portion 31, The opposite surface is the same diameter as the wafer W or a plane larger than the wafer W.  [0149] A heating unit 1011 such as a heater is housed in the lid body 1010. In addition, The heating portion 1011 can also be built in the holding portion 31, Or it is built in both the cover 1010 and the holding part 31. and, The processing unit 16E is provided with a lifting unit 1012 that moves the lid 1010 up and down.  [0150] Second, The removal process of the sixth embodiment will be described. In the removal process of the sixth embodiment, A liquid film (liquid film forming process) for removing the liquid is formed on the upper surface of the wafer W after the etching process held by the holding portion 31.  [0151] For example, The removal liquid is supplied from the removal liquid supply nozzle 41 (see FIG. 7 and the like) to the wafer W, The wafer W is rotated by the driving unit 33 (refer to FIG. 6). Thereby, a liquid film for removing the liquid is formed on the wafer W. or, Sulfuric acid and nitric acid may be supplied to the rotating wafer W from the sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44 (see FIG. 10). Forming a removal liquid on the wafer W, Thereby, a liquid film for removing the liquid is formed on the wafer W.  [0152] Next, After the liquid film is formed, Stop the rotation of the wafer W, After stopping the supply of the removal liquid from the liquid supply nozzle 41 to the wafer W or the supply of sulfuric acid and nitric acid, As shown in Fig. 15B, Lowering the cover 1010 by the lifting portion 1012, Thereby, the lid body 1010 is brought into contact with the liquid film from which the liquid is removed. then, In a state where the lid body 1010 is in contact with the liquid film from which the liquid is removed, The heating portion 1011 is used to heat the removal liquid. The same removal liquid is allowed to remain on the wafer W for a predetermined period of time (maintenance processing).  The present inventors have ascertained that the liquid is removed by heating, The case where gas is generated from the removal liquid. also, The inventors have found out that the gas is detached from the removal liquid, The case where the reactivity of the liquid with the boron single film 112 is lowered is lowered. then, In the sixth embodiment, Contacting the lid body 1010 with the liquid film for removing the liquid, And to reduce the exposed area of the liquid film, Thereby, the gas is not detached from the removal liquid as much as possible. With this, The decrease in the reactivity of the removal liquid due to the generation of gas can be suppressed.  [0154] Then, Stop heating by the heating unit 1011, After the lid 1010 is raised by the lifting portion 1012, The holding portion 31 is rotated by the driving portion 33 (see FIG. 6). The removal liquid is removed from the wafer W. then, The DIW is supplied to the wafer W from the DIW supply nozzle 42 (see FIG. 7 and the like), Thereby, the removal liquid remaining on the wafer W (washing treatment) is removed.  [0155] Next, By increasing the number of rotations of the wafer W, Removing the DIW from the wafer W, The wafer W is dried (drying treatment). then, Stopping the rotation of the wafer W, The wafer W is carried out from the processing unit 16E, The substrate is processed.  [0156] In addition, In each of the above embodiments, The holding portion 31 that adsorbs and holds the wafer W from below will be described as an example. However, for example, as in the substrate holding mechanism 30D2 shown in FIG. 14, The removal process is performed using the holding portion of the pattern of the peripheral portion of the wafer W by the plurality of grip portions 311.  [0157] In each of the above embodiments, After the wafer W is supplied with the removal liquid, Washing treatment and drying treatment are carried out. but, Not limited to this, It is also possible to supply the removal liquid to the wafer W, Before washing, A process of supplying nitric acid to the wafer W is performed. E.g, In the processing unit 16A shown in FIG. 9 or the processing unit 16B shown in FIG. 10, After valve 743 and valve 744 are opened for a predetermined time, Only close valve 743, Only open valve 744 for a predetermined time, Thereby before the washing process, Nitric acid can be supplied to the wafer W.  [0158] Also, In each of the above embodiments, The removal liquid is supplied to the wafer W from the removal liquid supply nozzle 41, Or sulfuric acid and nitric acid are separately supplied from the sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44. Thereby, the removal liquid is brought into contact with the wafer W. but, The method of bringing the removal liquid into contact with the wafer W is not limited thereto.  [0159] For example, After the wafer W is held (holding project) in a batch (a sample of the holding portion) of the wafer W capable of holding a plurality of sheets, The batch is immersed in the removal liquid stored in the treatment tank, Thereby, the removal liquid is brought into contact with the wafer W, The boron single film 112 is removed from the wafer W (removal engineering). With this, The wafer W of a plurality of sheets held in batches can be processed at one time.  (Seventh Embodiment) Next, The seventh embodiment will be described. 16A and 16B are views showing an example of a configuration of a processing unit according to a seventh embodiment.  [0161] As shown in FIG. 16A, The processing unit 16F of the seventh embodiment is a mounting portion 1020 having a disk shape. The placing unit 1020 is provided with, for example: Connected to the disc-shaped bottom portion 1021 of the pillar portion 32, And an annular peripheral wall portion 1022 provided on the upper surface of the bottom portion 1021. The peripheral wall portion 1022 is an inner peripheral surface 1023 having a diameter that gradually decreases toward the lower side. The inner peripheral surface 1023 is in contact with the crystal edge portion of the wafer W. The wafer W is in contact with the inner peripheral surface 1023 at the crystal edge portion. It is placed on the placing portion 1020 in a state of being separated from the bottom portion 1021. In addition, Here, the bottom portion 1021 and the peripheral wall portion 1022 are different individuals. However, the bottom portion 1021 and the peripheral wall portion 1022 may be integrally formed.  [0162] Again, The processing unit 16F includes a holding unit 1024 and a lifting unit 1025. In the holding portion 1024, the wafer W is held from above in a state where the film formation surface of the boron single film 112 faces downward. The holding portion 1024 is a vacuum chuck or a Bernoulli chuck that can hold, for example, the adsorption holding wafer W. The lifting portion 1025 is configured to raise and lower the holding portion 1024.  [0163] The bottom portion 1021 of the mounting portion 1020 is a heating portion 1026 in which a heater or the like is housed. In addition, The heating portion 1026 is as long as it is built in the bottom 1021 At least one of the peripheral wall portion 1022 and the holding portion 1024 may be used.  [0164] Second, The removal process in the seventh embodiment will be described. In the removal process of the seventh embodiment, First of all, The removal liquid supply nozzle 41 (see FIG. 7 and the like) or the sulfuric acid supply nozzle 43 and the nitric acid supply nozzle 44 (see FIG. 10) are used. The liquid is stopped in the dish-shaped mounting portion 1020.  [0165] Next, The holding portion 1024 is lowered by the lifting portion 1025, Thereby, the wafer W held by the holding portion 1024 is brought into contact with the removed liquid that has been stagnated in the placing portion 1020 (see FIG. 16B). then, In a state where the wafer W is in contact with the removal liquid, The removal liquid is heated by the heating unit 1026. With this, The boron single film 112 on the wafer W is removed by removing the liquid. In addition, In order to suppress the generation of gas, The heating of the removal liquid is preferably started after the wafer W is in contact with the removal liquid.  [0166] Then, Stop heating of the removal liquid by the heating unit 1026, The holding portion 1024 is raised by the lifting portion 1025.  [0167] After the processed wafer W is transported to another processing unit (not shown) having the configuration shown in FIG. 6, for example, In a state of being held by the rotating holding portion 31, The DIW of the washing liquid is supplied from the processing fluid supply unit 40 (DIW supply nozzle 42), Thereby, the removal liquid is removed from the wafer W. then, After the number of revolutions of the wafer W is increased to dry the wafer W, Stopping the rotation of the wafer W, The wafer W is carried out from the processing unit 16F, The substrate is processed.  [0168] In addition, In the processing unit 16F, The driving unit 33 is used to rotate the placing unit 1020. Thereby, the process of removing the liquid that has been stagnated in the mounting portion 1020 is removed from the mounting portion 1020. However, the method of removing the liquid from the mounting portion 1020 is not limited thereto. E.g, A lifting portion that lifts and lowers the peripheral wall portion 1022 may be provided in the placing portion 1020. The peripheral wall portion 1022 is raised by such a lifting portion. Thereby, the removal liquid is removed from the mounting portion 1020. also, A discharge port may also be provided at the bottom 1021. The removal liquid is discharged from such a discharge port.  [0169] According to the processing unit 16F of the seventh embodiment, Then, as shown in FIG. 16B, The edge portion of the wafer W contacts the inner peripheral surface 1023 of the peripheral wall portion 1022 of the mounting portion 1020, A state in which the removal liquid was sealed was produced. therefore, Compared with the processing unit 16E of the sixth embodiment, The gas generated by the heating can be more reliably suppressed from being detached from the removal liquid. therefore, The decrease in the reactivity of the removal liquid due to the generation of gas can be more reliably suppressed.  (Eighth Embodiment) Next, The eighth embodiment will be described. 17A and 17B are views showing an example of a configuration of a processing unit in the eighth embodiment.  [0171] As shown in FIG. 17A, The processing unit 16G of the eighth embodiment is provided with a nozzle 1030. The nozzle 1030 has, for example, a double tube configuration. The outer tube is connected to the removal liquid supply source 1032 via the valve 1031. The inner tube is connected to a pump 1033. According to such a nozzle 1030, The balance between the flow rate of the removal liquid supplied from the removal liquid supply source 1032 via the valve 1031 and the flow rate of the removal liquid sucked by the pump 1033 is obtained. Thereby, a state in which droplets of the liquid are removed is formed between the nozzle 1030 and the wafer W. and, The nozzle 1030 is a heating unit (not shown) in which a heater or the like is incorporated. The removal liquid supplied from the removal liquid supply source 1032 can be heated.  [0172] and, The processing unit 16G is provided with a moving unit 1034 that moves the nozzle 1030. The moving portion 1034 moves the nozzle 1030 in the vertical direction and the horizontal direction.  [0173] Second, The removal process in the eighth embodiment will be described. In the removal process of the eighth embodiment, After the wafer W after the etching process is held by the holding portion 31, The moving portion 1034 lowers the nozzle 1030 to be in a state close to the wafer W. then, Open the valve 1031, Actuating pump 1033, Thereby, a state in which droplets of the liquid are removed is formed between the nozzle 1030 and the wafer W.  [0174] Next, As shown in Fig. 17B, The wafer W is rotated by the drive unit 33. then, Keeping the height position of the nozzle 1030 stationary, The moving portion 1034 horizontally moves the nozzle 1030 from the outer peripheral portion on the one end side of the wafer W toward the outer peripheral portion on the other end side. Thereby, the liquid is removed from the entire supply of the wafer W. With this, The boron single film 112 on the wafer W is removed.  [0175] Then, Closing valve 1031, Stop pump 1033, The nozzle 1030 is raised. then, The DIW is supplied from the DIW supply nozzle 42 to the wafer W, Thereby removing the removal liquid remaining on the wafer W, The wafer W is dried by increasing the number of rotations of the wafer W. then, Stopping the rotation of the wafer W, The wafer W is carried out from the processing unit 16G, The substrate is processed.  [0176] The removal process of the boron single film 112 is performed by using the nozzle 1030 in a state in which the liquid droplets of the removal liquid are formed between the wafer W and the wafer W. The amount of the removal liquid can be reduced.  (Ninth Embodiment) Next, A description will be given of the ninth embodiment. 19 is a view showing an example of a configuration of a substrate processing apparatus according to a ninth embodiment.  [0178] As shown in FIG. 19, The substrate processing apparatus 1H includes a carrier carry-in/out unit 2002, Batch formation department 2003, Batch loading department 2004, Batch transfer department 2005, Batch processing unit 2006 and control unit 2007.  [0179] The carrier carry-in/out unit 2002 is a loading and unloading of the carrier 2009 that is stored in a plurality of sheets (for example, 25 sheets) in a horizontal posture.  [0180] The carrier loading and unloading portion 2002 is provided with: a carrier platform 2010 on which a plurality of carriers 2009 are placed, The carrier transport mechanism 2011 that carries the carrier 2009, Temporarily storing the carrier library 2012 of the carrier 2009, 2013, And a carrier mounting table 2014 on which the carrier 2009 is placed. here, The carrier library 2012 temporarily stores the wafer W as a product before being processed by the batch processing unit 2006. and, The carrier library 2013 temporarily stores the wafer W as a product after being processed by the batch processing unit 2006.  [0181] Then, The carrier carry-in/out unit 2002 is a carrier 2009 that is carried from the outside to the carrier platform 2010 and is transported to the carrier library 2012 or the carrier mounting table 2014 by the carrier transport mechanism 2011. also, The carrier carrying-in/out unit 2002 is transported to the carrier library 2013 or the carrier platform 2010 by the carrier transport mechanism 2011 by the carrier 2009 placed on the carrier mounting table 2014. The carrier 2009 transported to the carrier platform 2010 is carried out toward the outside.  The batch forming unit 2003 is a batch formed by forming a plurality of wafers (for example, 50 wafers) that are simultaneously processed by the wafer W accommodated in one or a plurality of carriers 2009. In addition, When forming a batch, It is possible to form a batch in such a manner that the surfaces on which the pattern is formed on the surface of the wafer W face each other. Further, it is also possible to form a batch in such a manner that all of the surfaces on which the pattern is formed on the surface of the wafer W face one.  [0183] The batch forming unit 2003 is a substrate transport mechanism 2015 that is provided with a wafer W that transports a plurality of sheets. In addition, The substrate transfer mechanism 2015 changes the posture of the wafer W from the horizontal posture to the vertical posture and from the vertical posture to the horizontal posture during the conveyance of the wafer W.  [0184] Then, The batch forming unit 2003 transports the wafer W to the batch placing unit 2004 by the substrate transport mechanism 2015 from the carrier 2009 placed on the carrier mounting table 2014. The wafer W on which the bulk is formed is placed on the batch placement unit 2004. and, The batch forming unit 2003 transports the batch placed on the batch placing unit 2004 to the carrier 2009 placed on the carrier mounting table 2014 by the substrate transfer mechanism 2015. In addition, The substrate transfer mechanism 2015 is a substrate support portion that serves as a wafer W for supporting a plurality of sheets. have: The pre-process substrate supporting portion of the wafer W before the processing (before the bulk transfer unit 2005 is transported) is supported, And two types of substrate support portions after the processing of the wafer W after the support processing (after the bulk transfer unit 2005 is transported). With this, The particles or the like adhering to the wafer W or the like before the treatment are prevented from adhering to the processed wafer W or the like.  [0185] The batch placement unit 2004 is a batch that is temporarily placed (standby) on the batch placement table 2016 and transported between the batch formation unit 2003 and the batch processing unit 2006 by the batch transfer unit 2005.  [0186] Here, the batch placement unit 2004 is provided with: The batch loading side batch mounting table 2017 before the loading process (before the bulk transfer unit 2005 is transported) And the batch-side batch placement stage 2018 after the placement process (after the batch transfer unit 2005 is transported). In the loading-side batch mounting table 2017 and the unloading-side batch mounting table 2018, the wafers W of a plurality of batches are placed in a vertical posture and placed in the front and rear.  [0187] Then, In the batch placement unit 2004, The batch formed by the batch forming unit 2003 is placed on the loading side batch mounting table 2017. This lot is moved to the batch processing unit 2006 via the batch transfer unit 2005. and, In the batch placement unit 2004, The batch that is carried out from the batch processing unit 2006 via the batch transfer unit 2005 is placed on the carry-out side lot placement table 2018. This lot is transferred to the lot formation unit 2003.  [0188] The batch transfer unit 2005 performs batch transfer between the batch placement unit 2004 and the batch processing unit 2006 or between the batch processing units 2006.  [0189] The batch transfer unit 2005 is a batch transfer mechanism 2019 that is provided to carry out batch transfer. The batch transport mechanism 2019 is a rail 2020 that is disposed along the X-axis direction across the batch placement unit 2004 and the batch processing unit 2006. And a moving body 2021 that moves along the track 2020 while holding a plurality of wafers W. The substrate holder 2022 is provided with the substrate holder 2022 in a movable manner. The substrate holder 2022 is a wafer W that holds a plurality of sheets arranged in a front and rear direction in a vertical posture.  [0190] Then, The batch transfer unit 2005 receives the batch loaded on the carry-in side lot placement table 2017 by the substrate holder 2022 of the batch transfer mechanism 2019. This lot is delivered to the batch processing unit 2006. and, The batch transfer unit 2005 receives the batch processed by the batch processing unit 2006 by the substrate holder 2022 of the batch transfer mechanism 2019. This lot is delivered to the carry-out side lot placement table 2018. and, The batch transfer unit 2005 performs batch transfer in the batch processing unit 2006 by the batch transfer mechanism 2019.  The batch processing unit 2006 performs processing such as etching, washing, or drying in a plurality of wafers W arranged in a plurality of sheets in a vertical posture.  [0192] Here, the batch processing unit 2006 is configured with: a processing unit 2023 that performs a drying process of the wafer W, And a substrate holder cleaning unit 2024 that performs a cleaning process of the substrate holder 2022. and, In the batch processing unit 2006, the processing unit 2025 that performs the removal processing for removing the boron single film 112 from the wafer W (see FIG. 1A) and the particle removal processing for removing the particles attached to the wafer W after the removal processing is configured. 2 Processing unit 2023, The substrate holder cleaning unit 2024 and the two processing units 2025 are arranged side by side along the rail 2020 of the batch transport unit 2005.  [0193] The processing unit 2023 is provided with a substrate elevating mechanism 2028 that is lifted and lowered in the processing tank 2027. In the processing tank 2027, As a treatment liquid for drying, for example, Is supplied, for example, IPA. In the substrate elevating mechanism 2028, a plurality of wafers W of one batch are arranged in a vertical posture and held in front and rear. The processing unit 2023 receives the batch from the substrate holding body 2022 of the batch transfer mechanism 2019 by the substrate elevating mechanism 2028. The substrate lifting mechanism 2028 causes the batch to be lifted and lowered, Thereby, the drying process of the wafer W is performed by the IPA supplied to the processing tank 2027. and, The processing unit 2023 is a substrate holder 2022 that delivers the batch to the batch transfer mechanism 2019 from the substrate elevating mechanism 2028.  [0194] The substrate holder cleaning unit 2024 can supply the processing liquid for cleaning and the drying gas to the processing tank 2029, After the cleaning treatment liquid is supplied to the substrate holder 2022 of the batch transfer mechanism 2019, Supply dry gas, Thereby, the cleaning process of the substrate holder 2022 is performed.  [0195] The processing unit 2025 is a processing tank 2030 having a removal process and a processing tank 2031 for performing particle removal processing. The removal tank is stored in the treatment tank 2030. and, The treatment tank 2031 is, for example, SC1 or ammonia water (hereinafter referred to as "dilute ammonia water") diluted to a predetermined concentration. The washing liquid such as DIW is stored in order. In each processing tank 2030, 2031 is provided with a substrate lifting mechanism 2032 that is freely movable, 2033.  [0196] In the substrate elevating mechanism 2032, 2033 is a wafer W of a plurality of batches of a plurality of sheets arranged in a vertical posture and held in front and rear. The processing unit 2025 first accepts the batch from the substrate holding body 2022 of the batch transfer mechanism 2019 by the substrate elevating mechanism 2032. The batch is lowered by the substrate lifting mechanism 2032, Thereby, the batch is immersed in the removal liquid stored in the treatment tank 2030. With this, The boron single film 112 is removed from the wafer W.  [0197] Then, The processing unit 2025 is a substrate holder 2022 that delivers the batch to the batch transfer mechanism 2019 from the substrate elevating mechanism 2032. and, The processing unit 2025 receives the batch from the substrate holding body 2022 of the batch transfer mechanism 2019 by the substrate elevating mechanism 2033. The batch is lowered by the substrate lifting mechanism 2033, Thereby, the batch is immersed in the DIW stored in the processing tank 2031 to perform the washing process of the wafer W. then, The processing unit 2025 discharges the DIW from the processing tank 2031. Storing SC1 or dilute ammonia in the treatment tank 2031, Thereby, the batch is immersed in SC1 or dilute ammonia water. then, The processing unit 2025 discharges the SC1 or the dilute ammonia water from the processing tank 2031. The DIW is stored again in the processing tank 2031, Thereby, the batch is immersed in DIW to perform the washing process of the wafer W. then, The processing unit 2025 is a substrate holder 2022 that delivers the batch to the batch transfer mechanism 2019 from the substrate elevating mechanism 2033.  [0198] The control unit 2007 controls each unit of the substrate processing apparatus 1H (carrier carry-in/out unit 2002, Batch formation department 2003, Batch loading department 2004, Batch transfer department 2005, The operation of the batch processing unit 2006 and the like.  [0199] This control unit 2007 is, for example, a computer, A memory medium 2038 that can be read by a computer. A program for controlling various processes executed in the substrate processing apparatus 1H is stored in the memory medium 2038. The control unit 2007 is executed by reading a program stored in the memory medium 2038. Thereby, the operation of the substrate processing apparatus 1H is controlled. In addition, The program is remembered by a memory medium 2038 that can be read by a computer. It may be a memory medium 2038 that is attached to the control unit 2007 from another memory medium. The memory medium 2038 that can be read by a computer is, for example, a hard disk (HD), Soft disk (FD), CD (CD), Optical disk (MO), Memory card, etc.  [0200] Second, A configuration example of the processing unit 2025 will be described. First of all, A configuration example of the processing tank 2030 and its surroundings relating to the removal processing will be described with reference to Fig. 20 . FIG. 20 is a view showing a configuration example of the processing tank 2030 on which the removal processing is performed and its surroundings.  [0201] As shown in FIG. 20, The processing tank 2030 provided in the processing unit 2025 is provided with: Inner slot 2034, An outer groove 2035 is provided adjacent to the inner groove 2034 around the upper portion of the inner groove 2034. Both the inner groove 2034 and the outer groove 2035 are open at the upper portion. The removal liquid is configured to overflow from the upper portion of the inner tank 2034 to the outer tank 2035.  [0202] The processing unit 2025 is provided with: a DIW supply unit 2040 for supplying DIW to the processing tank 2030, a nitric acid supply unit 2041 for supplying nitric acid to the treatment tank 2030, And a sulfuric acid supply unit 2042 for supplying sulfuric acid to the treatment tank 2030.  [0203] The DIW supply unit 2040 is provided with: DIW supply source 2043, DIW supply path 2044 and valve 2045. then, Driven from the closed state to the open state by the valve 2045, The DIW is supplied from the DIW supply source 2043 to the outer tank 2035 of the processing tank 2030 via the DIW supply path 2044. In addition, The DIW supplied by the DIW supply unit 2040 is used as an abnormality matching process to be described later when the leak of the NOx is detected. The points related to this are as follows.  [0204] The nitric acid supply unit 2041 is provided with: Nitric acid supply source 2046, Nitric acid supply path 2047 and valve 2048. The nitric acid supply source 2046 is a tank that stores nitric acid diluted with water (pure water) to a predetermined concentration. E.g, The nitric acid supply source 2046 is stored with nitric acid diluted to a concentration of 69%. then, Driven from the closed state to the open state by the valve 2048, The diluted nitric acid is supplied from the nitric acid supply source 2046 to the outer tank 2035 of the treatment tank 2030 via the nitric acid supply path 2047.  [0205] The sulfuric acid supply unit 2042 is provided with: Sulfuric acid supply source 2049, Sulfuric acid supply path 2050 and valve 2051. The sulfuric acid supply source 2049 is a tank that stores sulfuric acid diluted to a predetermined concentration with water (pure water). E.g, The sulfuric acid supply source 2049 stores sulfuric acid diluted to a concentration of 96 to 98%. then, By the valve 2051 driving from the closed state to the open state, The diluted sulfuric acid is supplied from the sulfuric acid supply source 2049 to the outer tank 2035 of the treatment tank 2030 via the sulfuric acid supply path 2050.  [0206] Nitric acid and sulfuric acid diluted to a predetermined concentration are supplied to the outer tank 2035, Thereby, the nitric acid and sulfuric acid are mixed in the outer tank 2035 to produce a desired concentration of the removal liquid. in this way, The outer tank 2035 is an example of a mixed portion of sulfuric acid diluted with water and a nitric acid diluted by water flowing through the nitric acid supply path 2047, which is mixed with the sulfuric acid supply path 2050 (an example of a strong acid supply path).  [0207] Also, The processing unit 2025 is provided with: The removal liquid stored in the treatment tank 2030 is taken out from the treatment tank 2030 and returned to the circulation portion 2052 of the treatment tank 2030.  [0208] Specifically, The loop unit 2052 is provided with: Nozzle 2054, Circulating flow path 2055, Pump 2056, Heating unit 2057, The filter 2058 and the nitric acid concentration detecting unit 2059.  [0209] The nozzle 2054 is disposed inside the inner groove 2034 below the wafer W held by the substrate elevating mechanism 2032 (see FIG. 19). The nozzle 2054 is a cylindrical shape having an arrangement direction of the wafers W extending over the plurality of sheets. and, It is configured to discharge the removal liquid toward the wafer W held by the substrate elevating mechanism 2032 from a plurality of discharge ports that are bored on the circumferential surface thereof. in this way, The nozzle 2054 is an example of a removal liquid supply nozzle that supplies a removal liquid generated by the outer tank 2035 (an example of a mixing unit) to the wafer W.  [0210] The circulation flow path 2055 is a bottom portion and a nozzle 2054 which are respectively connected to the outer groove 2035 at both end portions. Pump 2056, The heating unit 2057 and the filter 2058 are provided in this order for the circulation flow path 2055. The circulation portion 2052 circulates the removal liquid from the outer tank 2035 to the inner tank 2034 by driving the pump 2056. at this time, The removal liquid is heated to a predetermined temperature by the heating portion 2057, The impurities are removed by the filter 2058.  [0211] The removal liquid generated in the outer tank 2035 is circulated through the circulation flow path 2055. Discharged from the nozzle 2054 toward the inner groove 2034. With this, The removal liquid is stored in the inner tank 2034. and, The removal liquid discharged into the inner tank 2034 overflows from the inner tank 2034 to the outer tank 2035. The flow from the outer tank 2035 to the circulation flow path 2055 again. With this, A recycle stream of the removal liquid is formed.  [0212] The nitric acid concentration detecting unit 2059 is provided in the circulation flow path 2055. The concentration of nitric acid of the removal liquid flowing through the circulation flow path 2055 is detected, The detection result is output to the control unit 2007.  [0213] and, The processing unit 2025 is provided with a concentration adjustment liquid supply unit 2060. The concentration adjustment liquid supply unit 2060 supplies nitric acid as a concentration adjustment liquid that adjusts the concentration of the removal liquid. The concentration adjustment liquid supply unit 2060 is provided with a nitric acid supply source 2061. Nitric acid supply path 2062 and valve 2063. then, By the valve 2063 being driven from the closed state to the open state, Nitric acid is supplied from the nitric acid supply source 2061 to the circulation flow path 2055 via the nitric acid supply path 2062. By supplying the concentration adjusting liquid to the circulation flow path 2055 as described above, The concentration of the removal liquid can be stabilized earlier.  [0214] and, The processing unit 2025 is provided with: The first treatment liquid discharge unit 2064 that discharges the removal liquid from the inner tank 2034, The second treatment liquid discharge unit 2065 that discharges the removal liquid from the outer tank 2035.  [0215] The first processing liquid discharge unit 2064 is provided with: a draining flow path 2066 connecting the bottom of the inner tank 2034 and the outer drain pipe, And a valve 2067 that opens and closes the drain flow path 2066. The second treatment liquid discharge unit 2065 is provided with: a draining flow path 2068 connecting the bottom of the outer tank 2035 and the outer drain pipe, And a valve 2069 that opens and closes the drain flow path 2068.  [0216] The valve 2045 provided in the processing unit 2025, 2048, 2051, 2063, 2067, 2069, Pump 2056, The heating unit 2057 is controlled by the control unit 2007.  [0217] So, The substrate processing apparatus 1H of the ninth embodiment removes the boron single film 112 from the wafer W by immersing the wafer W in the removal liquid stored in the processing tank 2030.  [0218] In comparison with the case where the supply of the liquid W is continuously removed as described in the fourth embodiment (that is, the case where the replacement liquid is continuously replaced), Continuously bringing the same removal liquid into contact with the wafer W, The removal efficiency of the boron single film 112 can be improved. therefore, Like the substrate processing apparatus 1H of the ninth embodiment, By using the circulation portion 2052 to circulate the removal liquid, The wafer W is immersed in the removal liquid stored in the treatment tank 2030, Comparing with the case of continuously replacing the removal liquid on the wafer W, The removal efficiency of the boron single film 112 can be improved. and, The amount of the removal liquid can be reduced.  [0219] and, The heating liquid 2057 is used to heat the removal liquid flowing through the circulation flow path 2055. Thereby, the removal liquid supplied to the wafer W can be maintained at a constant temperature. With this, It is possible to suppress a decrease in the removal performance with a decrease in the temperature of the removal liquid.  [0220] Moreover, When the concentration of the removed liquid detected by the nitric acid concentration detecting unit 2059 is lower than the critical value, the control unit 2007 of the substrate processing apparatus 1H The valve 2063 of the concentration adjustment liquid supply unit 2060 is turned on to supply the nitric acid to the circulation flow path 2055. With this, The decrease in the concentration of nitric acid caused by the volatilization of the nitric acid from the removal liquid can be suppressed.  [0221] However, The circulation flow path 2055 is formed of a pipe having high corrosion resistance such as fluororesin, However, the nitric acid gas generated from the removal liquid may pass through such a pipe to corrode the member to be externally disposed.  [0222] Then, In the substrate processing apparatus 1H, The circulation flow path 2055 is set to a double piping structure. Purify the piping, Thereby, leakage of the nitric acid gas to the outside of the circulation flow path 2055 is suppressed.  [0223] This point will be explained with reference to FIG. 21. FIG. 21 is a view showing an example of the configuration of the circulation flow path 2055.  [0224] As shown in FIG. 21, The circulation flow path 2055 has a double piping structure. The double piping structure has: The inner pipe 2070 disposed on the inner side, And an outer pipe 2071 disposed on the outer side of the inner pipe 2070. The inner pipe 2070 and the outer pipe 2071 are formed of a member having high corrosion resistance such as fluororesin.  [0225] The inner pipe 2070 is connected to the bottom of the outer tank 2035 and the nozzle 2054 at both ends to circulate the removal liquid.  [0226] The outer pipe 2071 is a connection purifying portion 2072. The purification unit 2072 includes an upstream side pipe 2073 that is connected to the upstream side of the outer pipe 2071 and a downstream side pipe 2074 that is connected to the downstream side of the outer pipe 2071. In the upstream side pipe 2073, a fluid supply source 2075 for supplying the purification fluid to the upstream side pipe 2073 and a valve 2076 for opening and closing the upstream side pipe 2073 are provided. The downstream side pipe 2074 is provided with a pump 2077. The purification fluid may be a gas such as air or a liquid such as water.  [0227] The purification unit 2072 is configured to supply the purification fluid supplied from the fluid supply source 2075 to the outer pipe 2071 via the upstream pipe 2073. also, The purification unit 2072 is a pipe that discharges the purification fluid supplied to the outer pipe 2071 to the outside via the downstream pipe 2074 by the pump 2077. With this, The nitric acid gas that has passed through the inner pipe 2070 is a pipe that is discharged to the outside together with the purification fluid. therefore, The leakage of the nitric acid gas generated from the removal liquid to the outside of the circulation flow path 2055 can be suppressed.  [0228] Second, A configuration example of the processing tank 2031 for performing particle removal processing and its surroundings will be described with reference to Fig. 22 . FIG. 22 is a view showing a configuration example of the processing tank 2031 in which the particle removal processing is performed and its surroundings.  [0229] As shown in FIG. 22, The processing tank 2031 included in the processing unit 2025 is the same as the processing tank 2030. It has an inner groove 2034 and an outer groove 2035. Inside the inner tank 2034, a nozzle 2054 is provided. and, Like the processing tank 2030, The processing tank 2031 is provided with a first processing liquid discharge unit 2064 and a second processing liquid discharge unit 2065.  [0230] The processing tank 2031 is provided with a DIW supply unit 2200, The NH4OH supply unit 2210 and the H2O2 supply unit 2220. The DIW supply unit 2200 is provided with: DIW supply source 2201 The DIW supply path 2202 through which the DIW supplied from the DIW supply source 2201 flows And opening and closing the valve 2203 of the DIW supply path 2202, The DIW supplied from the DIW supply source 2201 is supplied to the nozzle 2054 via the DIW supply path 2202.  [0231] The NH4OH supply unit 2210 is provided with: NH4OH supply source 2211 The NH4OH supply path 2221 through which the NH4OH supplied from the NH4OH supply source 2211 flows And opening and closing the valve 2213 of the NH4OH supply path 2212, NH4OH supplied from the NH4OH supply source 2211 is supplied to the nozzle 2054 via the NH4OH supply path 2212.  [0232] The H 2 O 2 supply unit 2220 is provided with: H2O2 supply source 2221 H2O2 supply path 2222 through which H2O2 supplied from H2O2 supply source 2221 flows And opening and closing the valve 2223 of the H2O2 supply path 2222, H2O2 supplied from the H2O2 supply source 2221 is supplied to the nozzle 2054 via the H2O2 supply path 2222.  [0233] When supplying DIW as a washing liquid, Is closing the valve 2213, In the state of 2223, Valve 2203 is opened. With this, The DIW is supplied from the nozzle 2054 toward the inner groove 2034.  [0234] On the other hand, When supplying dilute ammonia water as a particle removing liquid, Is in the state of closing the valve 2223, Opening the valve 2203, 2213. With this, The DIW supplied from the DIW supply source 2201 and the NH4OH supplied from the NH4OH supply source 2211 are mixed. Dilute ammonia water is supplied from the nozzle 2054 toward the inner tank 2034. The DIW supply path 2202 and the NH4OH supply path 2212 are provided with a flow rate adjustment mechanism (not shown). Adjusting the flow rate of DIW and NH4OH by such a flow adjustment mechanism, Thereby DIW and NH4OH are mixed in a desired ratio.  [0235] Again, When SC1 as a particle removal liquid is supplied, Is to open the valve 2203, 2213, 2223. With this, DIW supplied from the DIW supply source 2201, The NH4OH supplied from the NH4OH supply source 2211 and the H2O2 supplied from the H2O2 supply source 2221 are mixed. SC1 is supplied from the nozzle 2054 toward the inner groove 2034. In the DIW supply road 2202 The NH4OH supply path 2212 and the H2O2 supply path 2222 are provided with a flow rate adjustment mechanism (not shown). And adjusting the DIW by such a flow adjustment mechanism, The flow rate of NH4OH and H2O2, Take this DIW, NH4OH and H2O2 are mixed in a desired ratio.  [0236] valve 2067, 2069, 2203, 2213, 2223 and a flow rate adjustment mechanism (not shown) are opened and closed by the control unit 2007.  [0237] In such a processing tank 2031, The DIW as a washing liquid and the dilute ammonia water or SC1 as a particle removing liquid are sequentially supplied, Draining, Processing a plurality of wafers W in a single slot, The processing of the so-called POU (Point of Use) method is performed. The points related to this are as follows.  [0238] Second, An example of a specific operation of the substrate processing apparatus 1H will be described with reference to Fig. 23 . FIG. 23 is a flowchart showing an example of a procedure of substrate processing performed by the substrate processing apparatus 1H of the ninth embodiment. Each processing program shown in FIG. 23 is executed in accordance with the control of the control unit 2007. and, The process shown in FIG. 23 is performed after the film formation process of step S101 and the etching process of step S102 shown in FIG. 8 are performed.  [0239] As shown in FIG. 23, In the substrate processing apparatus 1H, The removal process is performed on the wafer W after the etching process (step S201).  [0240] In the removal process, The processing unit 2025 receives the batch from the substrate holding body 2022 of the batch transfer mechanism 2019 by the substrate elevating mechanism 2032. Lowering the batch by the substrate lifting mechanism 2032, Thereby, the batch is immersed in the removal liquid stored in the treatment tank 2030. With this, The boron single film 112 is removed from the wafer W.  [0241] After that, The processing unit 2025 is configured to take out the batch from the processing tank 2030 by using the substrate lifting mechanism 2032. The taken-out batch is delivered to the substrate holder 2022 of the batch transfer mechanism 2019.  [0242] Next, In the substrate processing apparatus 1H, The washing process is performed (step S202). In the washing process, The processing unit 2025 receives the batch from the substrate holding body 2022 of the batch transfer mechanism 2019 by the substrate elevating mechanism 2033. The batch is lowered by the substrate lifting mechanism 2033, Thereby, the batch is immersed in the DIW stored in the treatment tank 2031. With this, The removal liquid is removed from the wafer W.  The DIW that has overflowed from the inner tank 2034 to the outer tank 2035 is a drain pipe that is discharged from the second treatment liquid discharge unit 2065 to the outside. therefore, Frequently fresh DIWs are supplied to a plurality of wafers W.  [0244] After that, The processing unit 2025 is to close the valve 2203 of the DIW supply unit 2200. The valve 2067 of the first treatment liquid discharge unit 2064 is opened for a predetermined time, The DIW is discharged from the processing tank 2031.  [0245] Next, In the substrate processing apparatus 1H, Particle removal processing is performed (step S203). In the particle removal process, The processing unit 2025 is, for example, a valve 2203 that opens the DIW supply unit 2200, The valve 2213 of the NH4OH supply unit 2210 and the valve 2223 of the H2O2 supply unit 2220, The SC1 is stored in the inner groove 2034 of the processing tank 2031, The batch disposed in the inner tank 2034 is immersed in the SC1. With this, Particles are removed from the wafer W. The SC1 that has overflowed from the inner tank 2034 to the outer tank 2035 is a drain pipe that is discharged from the second treatment liquid discharge unit 2065 to the outside. therefore, The plurality of wafers W are often supplied with fresh SC1.  [0246] In addition, The processing unit 2025 may further include an ultrasonic vibration unit that applies ultrasonic vibration to the inner groove 2034. In this case, The processing unit 2025 is in the particle removal process, Ultrasonic vibration is applied to the inner groove 2034 by the ultrasonic vibration portion. With this, In addition to the chemical action (etching effect) held by SC1, The physical force caused by ultrasonic vibration can be imparted to the wafer W, The efficiency of particle removal can be improved.  [0247] After that, The processing unit 2025 is a valve 2203, 2213, 2223 closed, The valve 2067 of the first treatment liquid discharge unit 2064 is opened for a predetermined time, The SC1 is discharged from the processing tank 2031.  [0248] In addition, In the particle removal process, The valve 2203 of the DIW supply unit 2200 and the valve 2213 of the NH4OH supply unit 2210 can also be opened. The dilute ammonia water is stored in the inner tank 2034.  [0249] Next, In the substrate processing apparatus 1H, The washing process is performed (step S204). In the washing process, The processing unit 2025 is a valve 2203 that opens the DIW supply unit 2200, The DIW is stored in the inner groove 2034 of the processing tank 2031, The batch disposed in the inner tank 2034 is immersed in the DIW. With this, The SC1 is removed from the wafer W.  [0250] After that, The processing unit 2025 is a substrate holding body 2022 that is batch-delivered from the substrate elevating mechanism 2033 to the batch transfer mechanism 2019.  [0251] Next, In the substrate processing apparatus 1H, The drying process is performed (step S205). In the drying process, The processing unit 2023 receives the batch from the substrate holding body 2022 of the batch transfer mechanism 2019 by the substrate elevating mechanism 2028. The batch is lowered by the substrate lifting mechanism 2028, Thereby, the batch is immersed in the IPA stored in the treatment tank 2027. With this, The DIW is removed from the wafer W. then, The processing unit 2023 uses the substrate elevating mechanism 2028 to raise the batch. With this, The IPA remaining on the wafer W will volatilize. Wafer W will dry.  [0252] Then, The processing unit 2023 is a substrate holder 2022 that delivers the batch to the batch transfer mechanism 2019 from the substrate elevating mechanism 2028. The batch transfer mechanism 2019 loads the batch into the batch placement unit 2004. after that, The batch forming unit 2003 transports the batch placed on the batch placing unit 2004 to the carrier 2009 placed on the carrier mounting table 2014 by the substrate transfer mechanism 2015. then, The carrier transporting unit 2002 transports the carrier 2009 placed on the carrier mounting table 2014 to the carrier platform 2010 by the carrier transport mechanism 2011. With this, A series of substrate processes performed in the substrate processing apparatus 1H are completed. In addition, The carrier 2009 that has been transported to the carrier platform 2010 is carried out to the outside.  [0253] Second, A modification of the above-described substrate processing apparatus 1H will be described with reference to Fig. 24 . FIG. 24 is a view showing an example of a configuration of a substrate processing apparatus according to a modification of the ninth embodiment. also, FIG. 25 is a view showing a configuration example of a processing tank for performing particle removal processing in the processing unit 2091 of the modification and its surroundings. In addition, In Figure 24, The configuration of the batch processing unit will be partially omitted. The configuration other than the batch processing unit is the same as that of the substrate processing apparatus 1H.  [0254] As shown in FIG. 24, The substrate processing apparatus 1H-1 of the modification is provided with a batch processing unit 2006-1.  [0255] The batch processing unit 2006-1 is provided with: a processing unit 2090 that performs a removal process and a subsequent wash process, And a processing unit 2091 that performs particle removal processing and subsequent washing processing.  [0256] The processing unit 2090 has: a processing tank 2030 for performing a removal process, And a treatment tank 2092 that performs a washing process. The processing tank 2092 is a processing tank 2030, Similarly, 2031, An inner groove 2034 and an outer groove 2035 are provided. The configuration of the periphery of the treatment tank 2092 is the same as the configuration in which the NH4OH supply unit 2210 and the H2O2 supply unit 2220 are removed by the configuration shown in Fig. 22 . A substrate elevating mechanism 2093 is provided in the processing tank 2092 so as to be movable up and down.  [0257] The processing unit 2091 has: a processing tank 2094 for performing particle removal processing, And a treatment tank 2095 for performing a washing treatment.  [0258] As shown in FIG. 25, The treatment tank 2094 is provided with an inner tank 2034 and an outer tank 2035. In the inner tank 2034, a nozzle 2054 and a first processing liquid discharge unit 2064 are provided. The second treatment liquid discharge unit 2065 is provided in the outer tank 2035.  [0259] The processing unit 2091 is provided with a DIW supply unit 2200, The NH4OH supply unit 2210 and the H2O2 supply unit 2220. DIW supply unit 2200, The NH4OH supply unit 2210 and the H2O2 supply unit 2220 are respectively DIW, NH4OH and H2O2 are supplied to the outer tank 2035. By supplying DIW and NH4OH to the outer tank 2035, DIW and NH4OH are mixed in the outer tank 2035 to form dilute ammonia water. and, By supplying DIW, NH4OH and H2O2 to the outer tank 2035, Mix DIW in the outer tank 2035, SC1 is produced by NH4OH and H2O2.  [0260] Again, The processing unit 2091 includes a loop unit 2052. A pump 2056 is provided in the circulation flow path 2055 of the circulation unit 2052. The heating unit 2057 and the filter 2058. The circulation unit 2052 circulates the SC1 or the dilute ammonia water from the outer tank 2035 to the treatment tank 2094 by driving the pump 2056. at this time, SC1 or dilute ammonia water is heated to a predetermined temperature by the heating portion 2057, The impurities are removed by the filter 2058.  The processing tank 2095 and its peripheral configuration are the same as the above-described processing tank 2092 and its surrounding configuration. In the processing tank 2094, 2095 is provided with a substrate lifting mechanism 2096 which is freely movable, 2097.  [0262] In the substrate processing apparatus 1H-1 configured as described above, The above removal processing (step S201), Washing process (step S202), Particle removal processing (step S203), The washing process (step S204) will be in the processing tank 2030, respectively. 2092, 2094, It was carried out in 2095. With this, Since it is not necessary to discharge the DIW as in the substrate processing apparatus 1 to store the SC1 or the dilute ammonia water or to discharge the SC1 or the dilute ammonia water to store the DIW, Therefore, the time required for such processing can be reduced.  [0263] and, In the substrate processing apparatus 1H-1 of the modification, Reusing SC1 or dilute ammonia water used in the particle removal treatment (step S203), Therefore, the amount of SC1 or dilute ammonia water used can be suppressed.  [0264] Second, The configuration of the exhaust path of the batch processing unit 2006 will be described with reference to Figs. 26 and 27 . 26 and 27 are views showing a configuration example of an exhaust path of the batch processing unit 2006. In addition, here, An example of the configuration of the exhaust path of the batch processing unit 2006 will be described. However, the same applies to the batch processing unit 2006-1 of the modified example.  [0265] As shown in FIG. 27, The processing unit 2025 is provided with a chamber 2110. The chamber 2110 is provided with: The first housing portion 2111 of the substrate lifting and lowering mechanism 2032 is housed, And a second housing portion 2112 that accommodates the processing tank 2030. The first housing portion 2111 and the second housing portion 2112 communicate via the opening portion 2113.  [0266] The FFU 2114 is provided at the top of the first housing portion 2111. The FFU 2114 is a downflow formed within the chamber 2110.  [0267] In the second housing portion 2112, An opening and closing portion 2115 is provided between the opening 2113 and the processing tank 2030. The opening and closing unit 2115 is disposed above the processing tank 2030 in the chamber 2110. have: Separating the inside of the chamber 2110 into upper and lower openable and coverable covers 2116, And a driving portion 2117 that drives the cover 2116. Closing the cover 2116 by the driving portion 2117, Thereby, the second housing portion 2112 is a space in which the substantially sealed processing tank 2030 is formed below the lid body 2116.  [0268] The processing unit 2025 is provided with: An exhaust pipe 2101 (an example of a first exhaust pipe) that exhausts a space in the space inside the chamber 2110 from the space below the cover 2116 (an example of the first exhaust pipe) And an exhaust pipe 2102 (an example of a second exhaust pipe) that exhausts a space above the cover 2116 in a space in the chamber 2110. The exhaust pipe 2101 is connected to the second housing portion 2112 at one end portion below the cover body 2116. The other end portion is connected to the collecting pipe 2103 shown in Fig. 27 . and, The exhaust pipe 2102 is connected to the second housing portion at one end portion above the cover body 2116. The other end will be connected to the exhaust pipe 2101.  [0269] In this way, In the processing unit 2025, in addition to the space in the second housing portion 2112, a space below the cover 2116, That is, outside the exhaust pipe 2101 in which the space exhaust of the treatment tank 2030 storing the removal liquid is disposed, There is further provided an exhaust pipe 2102 for exhausting a space above the cover 2116. With this, It is assumed that even if NOx generated from the removal liquid leaks into a space above the cover 2116, It is still possible to exhaust such NOx in the exhaust pipe 2102. therefore, Compared with the case where the exhaust pipe 2102 is not provided, The NOx generated from the removal liquid can be more reliably collected in the collecting pipe 2103. In addition, NOx (nitrogen oxides) is a general term for nitrogen oxides. For example, nitric oxide, Nitrogen dioxide, Nitrous oxide, Nitrous oxide and the like.  [0270] It is preferable that the exhaust pipe 2102 is disposed in the vicinity of the lid body 2116. By arranging the exhaust pipe 2102 near the cover 2116, The NOx leaking from the cover 2116 can be effectively exhausted.  [0271] As shown in FIG. 27, The batch processing unit 2006 is provided with each processing tank 2030 corresponding to two processing units 2025. The exhaust pipe 2101 of a plurality of 2031 (here, four). In addition, In the treatment tank 2031, no removal liquid is stored, Therefore, it is not necessary to provide the exhaust pipe 2102 in the exhaust pipe 2101 corresponding to the processing tank 2031.  [0272] Each of the exhaust pipes 2101 is connected to the collecting pipe 2103. The collecting pipe 2103 is provided with a scrubber device 2104 for removing NOx from the exhaust body flowing through the collecting pipe 2103. here, An example of the configuration of the scrubber device 2104 will be described with reference to Fig. 28 . FIG. 28 is a view showing a configuration example of the scrubber device 2104.  [0273] As shown in FIG. 28, The scrubber device 2104 is provided with a housing 2121. In the upper part of the frame 2121, a flow path 2122 is provided. At the lower portion is a storage portion 2123 provided with a liquid.  [0274] The flow path 2122 is provided with a spray nozzle 2124 and a mist eliminator 2125. Spray nozzle 2124 is connected to DIW supply path 2126. The DIW supply path 2126 is a valve 2128 in which a DIW supply source 2127 and an open/close DIW supply path 2126 are provided. The DIW supplied from the DIW supply source 2127 is sprayed from the spray nozzle 2124 toward the flow path 2122 via the DIW supply path 2126. The mist eliminator 2125 is disposed below the spray nozzle 2124. The mist is removed from the exhaust. The mist removed from the exhaust body is dropped downward and stored in the storage portion 2123. The storage portion 2123 is connected to the drain tube 2129, The liquid stored in the storage portion 2123 is discharged to the outside from the drain pipe 2129.  [0275] The scrubber device 2104 is configured as described above, The exhaust body that has flowed into the flow path 2122 from the upstream collecting pipe 2103 is NOx removed by contact with the DIW sprayed from the spray nozzle 2124. The moisture is removed by passing through the mist eliminator 2125. then, The exhaust gas from which NOx and moisture are removed flows out from the flow path 2122 to the downstream collecting pipe 2103.  [0276] By thus providing the scrubber device 2104 in the collecting pipe 2103, NOx can be removed from the exhaust gas flowing through the collecting pipe 2103.  [0277] Second, The correspondence regarding the case where the NOx flows out to the outside of the substrate processing apparatus 1H will be described with reference to FIGS. 29 and 30. FIG. 29 is a view showing an example of the external configuration of the substrate processing apparatus 1H. also, FIG. 30 is a flowchart showing an example of a processing procedure of the abnormality matching process. In addition, Here, the substrate processing apparatus 1H is exemplified, The same applies to the substrate processing apparatus 1H-1 of the modification.  [0278] As shown in FIG. 29, The substrate processing apparatus 1H is a substrate transport mechanism 2015 including a carrier transport mechanism 2011 or a batch formation unit 2003 that accommodates the above-described carrier carry-in/out unit 2002, The casing 2130 of the processing unit 2025 or the like of the batch processing unit 2006. On the outer surface of the casing 2130, a plurality of (here, two) NOx detecting units 2131 and display lamps 2132 are provided. The NOx detecting unit 2131 detects the NOx concentration outside the housing 2130. The detection result is output to the control unit 2007. The display lamp 2132 is, for example, an LED (Light Emitting Diode) lamp.  [0279] As shown in FIG. 30, The control unit 2007 of the substrate processing apparatus 1H determines whether or not the NOx concentration detected by the NOx detecting unit 2131 exceeds a critical value (step S301). When the NOx concentration detected by the NOx detecting unit 2131 does not exceed the critical value (step S301, No), The control unit 2007 is until the NOx concentration exceeds the critical value. The process of step S301 is repeated.  [0280] On the other hand, In step S301, When the NOx concentration detected by the NOx detecting unit 2131 is determined to exceed the critical value (step S301, Yes), The control unit 2007 performs the notification processing (step S302). In the notification process, The control unit 2007 lights the display lamp 2132, for example. or, The control unit 2007 can output a warning sound from a speaker (not shown) provided in the substrate processing apparatus 1H. With this, It is possible to notify the operator or the like of the leakage of NOx.  [0281] Next, The control unit 2007 performs a draining process (step S303). In the draining process, The control unit 2007 opens the valve 2067 of the first processing liquid discharge unit 2064 for a predetermined period of time. Thereby, the removal liquid stored in the treatment tank 2030 is discharged. also, The control unit 2007 performs DIW supply processing (step S304). In the DIW supply process, The control unit 2007 is a valve 2051 that closes the valve 2048 of the nitric acid supply unit 2041 and the sulfuric acid supply unit 2042. Opening the valve 2045 of the DIW supply unit 2040 for a predetermined time, Thereby, the DIW is stored in the processing tank 2030. in this way, The removal liquid is discharged from the treatment tank 2030 and replaced with DIW. Thereby, the regeneration of NOx can be suppressed.  [0282] As above, The substrate processing apparatus 1H of the ninth embodiment, Processing unit 2025 of 1H-1, 2090 is equipped with: a treatment tank 2030 for storing the removal liquid, And being disposed above the processing tank 2030, The substrate elevating mechanism 2032 that raises and lowers the wafer W. and, Substrate processing apparatus 1H, The control unit 2007 of 1H-1 is after the storage tank 2030 stores the removal liquid. The wafer W is immersed in the removal liquid stored in the treatment tank 2030 by the substrate elevating mechanism 2032.  [0283] Therefore, According to the substrate processing apparatus 1H of the ninth embodiment, 1H-1, Then compare with the case of continuously replacing the removal solution, The removal efficiency of the boron single film 112 can be improved. and, The amount of the removal liquid can be reduced.  [0284] Further effects or modifications are easily derived by the practitioner. therefore, The more general aspects of the invention are not limited to the specific details and representative embodiments described above. therefore, The spirit or scope of the inventive concept of the invention as defined by the appended claims and their equivalents, Implement various changes.

[0285]

W‧‧‧ wafer

1‧‧‧Substrate processing unit

30‧‧‧Substrate retention mechanism

40‧‧‧Processing Fluid Supply Department

41‧‧‧Removal fluid supply nozzle

42‧‧‧DIW supply nozzle

43‧‧‧sulfuric acid supply nozzle

44‧‧‧Nitrate supply nozzle

70‧‧‧Processing fluid supply

100‧‧‧Substrate processing system

111‧‧‧矽Oxide film

112‧‧‧ boron single film

113‧‧‧ recess

201‧‧‧ Film processing unit

301‧‧‧ etching processing unit

711‧‧‧Removal fluid supply

712‧‧‧DIW supply source

713‧‧‧Supply source of sulfuric acid

714‧‧‧Nitrate supply

721‧‧‧Removal fluid supply road

722‧‧‧DIW supply road

723‧‧‧Supply of sulfuric acid

724‧‧‧Nitrate supply road

731‧‧‧ Temperature Adjustment Department

741~744‧‧‧ valve

750‧‧‧Mixed Department

760‧‧‧Removal liquid supply road

1A is a view showing an example of a substrate processing method according to the first embodiment. Fig. 1B is a view showing an example of a substrate processing method according to the first embodiment. Fig. 1C is a view showing an example of a substrate processing method according to the first embodiment. Fig. 1D is a view showing an example of a substrate processing method according to the first embodiment. Fig. 2 is a block diagram showing an example of a substrate processing system according to the first embodiment. 3 is a view showing an example of a configuration of a film formation processing unit. 4 is a view showing an example of a configuration of an etching processing unit. FIG. 5 is a view showing a schematic configuration of a substrate processing apparatus according to the first embodiment. Fig. 6 is a view showing a schematic configuration of a processing unit according to the first embodiment; FIG. 7 is a view showing an example of a configuration of a processing liquid supply system of the processing unit according to the first embodiment. 8 is a flowchart showing an example of a procedure of substrate processing performed by the substrate processing system according to the first embodiment. FIG. 9 is a view showing an example of a configuration of a processing liquid supply system of the processing unit according to the second embodiment. FIG. 10 is a view showing an example of a configuration of a processing liquid supply system of the processing unit according to the third embodiment. FIG. 11A is a view showing an example of a configuration of a processing unit according to the fourth embodiment. Fig. 11B is a view showing an example of a configuration of a processing unit according to the fourth embodiment. FIG. 12 is a view showing an example of a configuration of a substrate processing system according to a fifth embodiment. FIG. 13 is a view showing an example of a configuration of a crystal edge processing unit. FIG. 14 is a view showing an example of a configuration of a back surface processing unit. Fig. 15A is a view showing an example of a configuration of a processing unit in the sixth embodiment. Fig. 15B is a view showing an example of a configuration of a processing unit in the sixth embodiment. Fig. 16A is a view showing an example of a configuration of a processing unit in the seventh embodiment. Fig. 16B is a view showing an example of a configuration of a processing unit in the seventh embodiment. Fig. 17A is a view showing an example of a configuration of a processing unit in the eighth embodiment. Fig. 17B is a view showing an example of a configuration of a processing unit in the eighth embodiment. Fig. 18 is a graph showing the relationship between the dilution ratio of the removal liquid and the etching rate of the boron single film. FIG. 19 is a view showing an example of a configuration of a substrate processing apparatus according to a ninth embodiment. FIG. 20 is a view showing a configuration example of a processing tank for performing a removal process and its surroundings. 21 is a view showing an example of the configuration of a circulation flow path. FIG. 22 is a view showing a configuration example of a processing tank for performing particle removal processing and its surroundings. FIG. 23 is a flowchart showing an example of a procedure of substrate processing performed by the substrate processing apparatus according to the ninth embodiment. FIG. 24 is a view showing an example of a configuration of a substrate processing apparatus according to a modification of the ninth embodiment. FIG. 25 is a view showing a configuration example of a processing tank for performing particle removal processing in a processing unit according to a modification and its surroundings. 26 is a view showing an example of the configuration of an exhaust path of the batch processing unit. FIG. 27 is a view showing an example of the configuration of an exhaust path of the batch processing unit. 28 is a view showing an example of the configuration of a scrubber device. 29 is a view showing an example of the external configuration of a substrate processing apparatus. FIG. 30 is a flowchart showing an example of a processing procedure of the abnormality matching process.

Claims (24)

A substrate processing method characterized in that a mixed acid of nitric acid and a strong acid and water removal liquid stronger than the nitric acid are brought into contact with a substrate on which a boron single film is formed on a film containing a lanthanoid film, and the foregoing substrate is removed from the substrate Boron single membrane. The substrate processing method according to the first aspect of the invention, wherein the boron single film is removed, and the liquid is supplied to the substrate at a flow rate before being supplied to the substrate. The above-mentioned removal liquid is produced by a strong acid diluted with the aforementioned water and nitric acid diluted with the aforementioned water. The substrate processing method according to claim 1, wherein the removal of the boron monolayer is carried out by mixing a strong acid diluted with the water and nitric acid diluted with the water on the substrate. The substrate processing method according to any one of claims 1 to 3, wherein the removal of the boron single film is performed by forming a liquid film of the removal liquid on the substrate, and forming the liquid film for a predetermined period of time. A state in which the liquid film of the removal liquid is formed on the substrate is maintained. The substrate processing method of claim 4, wherein the liquid film is formed on the substrate in a predetermined state for a predetermined period of time, and after the liquid film is formed, the removal liquid is retained on the substrate for a predetermined time. . The substrate processing method according to any one of claims 1 to 3, wherein the removal of the boron single film is performed by forming a liquid film of the removal liquid on the substrate to form the liquid film, and then The removal liquid is heated in a state where the lid having a flat surface on the side opposite to the substrate is in contact with the liquid film. The substrate processing method according to the first aspect of the invention, wherein the removal of the boron single film causes the removal liquid to be stopped in a dish-shaped mounting portion having an inner circumference which is gradually reduced in diameter toward the lower side. a surface of the substrate is placed in contact with a crystal edge portion of the substrate, and the substrate is placed on the mounting portion to bring the substrate into contact with the removal liquid that is stagnated in the mounting portion. The aforementioned removal liquid is heated. The substrate processing method according to claim 1, wherein the boron single film is removed, and the removal liquid is stored in a treatment tank, and the substrate is immersed in the removal liquid stored in the treatment tank. The substrate processing method according to any one of claims 1 to 3, wherein the boron single film is formed on a substrate having a film including the lanthanide film, and the removal liquid is brought into contact with the formation. The back surface of the substrate after the film and the edge portion are removed from the back surface and the crystal edge portion of the substrate, and the surface of the removed substrate is etched to remove the boron single film, which is performed on the substrate after the etching. The substrate processing method according to any one of the first to third aspect, wherein the strong acid of the removal liquid is sulfuric acid, the concentration of the sulfuric acid is 64% by weight or less, and the concentration of the nitric acid of the removal liquid is 3 wt% or more and 69 wt% or less. The substrate processing method according to any one of the first to third aspect, wherein the strong acid of the removal liquid is sulfuric acid, the concentration of the sulfuric acid is 50% by weight or less, and the concentration of the nitric acid of the removal liquid is 3 wt% or more and 69 wt% or less. A substrate processing apparatus comprising: a processing unit that holds a substrate on which a boron single film is formed on a film containing a tantalum oxide film, and that is in contact with a mixed nitric acid and a strong acid and water removal liquid stronger than the nitric acid; The substrate to be held thereby removes the boron single film from the substrate. The substrate processing apparatus according to claim 12, wherein the processing unit includes: a mixing unit connected to the strong acid supply path and the nitric acid supply path, and diluted by the water flowing through the strong acid supply path The strong acid is mixed with nitric acid which is diluted by the water, which flows through the nitric acid supply path, and the strong acid supply path flows a strong acid diluted by the water supplied from a strong acid supply source which supplies a strong acid diluted with water. The supply path flows the nitric acid diluted by the water supplied from the nitric acid supply source of the nitric acid diluted with water; and the removal liquid supply nozzle that supplies the removal liquid generated by the mixing unit to the foregoing Substrate. The substrate processing apparatus according to claim 12, wherein the processing unit further includes: a strong acid supply nozzle connected to the strong acid supply path, the strong acid supply path is distributed from the supply of the strong acid diluted by water a strong acid diluted by the water supplied from a strong acid supply source; and a nitric acid supply nozzle connected to a nitric acid supply path, which is supplied from a nitric acid supply source for supplying nitric acid diluted with water. The water-diluted nitric acid, the strong acid supply nozzle supplies a strong acid diluted by the water flowing through the strong acid supply path to the substrate, and the nitric acid supply nozzle flows through the water in the nitric acid supply path. The diluted nitric acid is supplied to the aforementioned substrate. The substrate processing apparatus according to any one of claims 12 to 14, wherein the processing unit includes: a holding unit that holds the substrate; and a lid that is held and held a holder having a flat surface on a side opposite to the substrate, a heating unit built in the lid body or the holding portion, and a lifting portion that lifts and lowers the lid body to form the removal liquid on the substrate After the liquid film, the lid body is lowered by the elevating portion, and the removal liquid is heated by the heating unit while the lid body is in contact with the liquid film. The substrate processing apparatus according to claim 12, wherein the processing unit includes a disk-shaped mounting portion having an inner peripheral surface that gradually decreases in diameter toward the lower surface, and the inner peripheral surface and the substrate a holding portion that holds the substrate from above in a state in which a film formation surface of the boron single film faces downward; and a heating portion that is built in the mounting portion or the holding portion; In the elevating portion, the holding portion is moved up and down, and after the removing portion is stopped by the placing portion, the holding portion is lowered by the elevating portion, whereby the substrate held by the holding portion is placed on the substrate The mounting portion is configured to heat the removal liquid by the heating unit while the substrate is in contact with the removal liquid that has been stagnated in the mounting portion. The substrate processing apparatus according to claim 12, wherein the processing unit includes: a processing tank that stores the removal liquid; and a substrate elevating mechanism that is disposed above the processing tank and that is held The substrate is lifted and lowered, and after the removal liquid is stored in the treatment tank, the substrate is immersed in the removal liquid stored in the treatment tank by the substrate elevating mechanism. The substrate processing apparatus according to claim 17, wherein the processing unit includes a circulation unit that takes out the removal liquid stored in the processing tank and returns the processing liquid to the processing tank. The substrate processing apparatus according to claim 17, wherein the processing unit includes: a chamber that houses the processing tank and the substrate elevating mechanism; and an openable and closable lid that is disposed in the chamber The chamber is partitioned from above and below the processing tank, and the first exhaust pipe exhausts a space in the space inside the chamber from the cover; and the second exhaust pipe The air in the space in the chamber is exhausted above the space above the cover. The substrate processing apparatus according to claim 17, further comprising: a housing that houses the processing unit; and a NOx detecting unit that is provided on an outer surface of the housing to detect an exterior of the housing When the NOx concentration detected by the NOx detecting unit exceeds a critical value, the NOx concentration is discharged by the removal liquid stored in the processing tank. A substrate processing system characterized by comprising: a film forming apparatus for forming a boron single film on a substrate having a film including a lanthanide film; and an etching device for etching the boron single film formed by the film forming device a substrate; and a substrate processing apparatus for removing the boron single film from a substrate etched by the etching device, wherein the substrate processing apparatus includes a processing unit that holds the substrate to mix nitric acid and is more nitric acid than the nitric acid The strong strong acid and water removal liquid contacts the substrate to be held, whereby the boron single film is removed from the substrate. A control device is a control device for a substrate processing system, the substrate processing system comprising: a film forming device for forming a boron single film on a substrate having a film including a tantalum oxide film; and an etching device for etching the film by the film forming a substrate on which the boron single film is formed; and a substrate processing apparatus that removes the boron single film from the substrate etched by the etching device, and controls that the substrate is held by the substrate processing device The mixed nitric acid, a strong acid and a water-removing liquid stronger than the nitric acid are brought into contact with the substrate to be held, whereby the boron single film is removed from the substrate. A method for producing a semiconductor substrate, characterized in that a mixed acid of nitric acid and a strong acid and water removal liquid stronger than the nitric acid are brought into contact with a substrate on which a boron single film is formed on a film containing a lanthanoid film, whereby the production is removed. The substrate of the aforementioned boron single film. A semiconductor substrate characterized in that a mixed acid of nitric acid and a strong acid and a water-removing liquid stronger than the nitric acid are brought into contact with a substrate on which a boron single film is formed on a film containing a lanthanoid film, thereby being manufactured and removed. Boron single film.