JP2005183694A - Substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent damages, a contamination, or an occurrence of a water mark, and to remove a natural oxide film of a wafer. <P>SOLUTION: An oxide film remover 10 comprises a removing chamber 12 retaining a wafer 1 by a retainer 20 to remove the natural oxide film, a chemical nozzle 24 feeding an etchant and a rinse to the wafer 1 retained by the retainer 20, a steam nozzle 27 spraying steam to the rinsed wafer 1, an exhaust duct 32 exhausting the sprayed steam, a rotary shaft 18 rotating the retainer 20, and a pivot driving device 35 pivoting the steam nozzle 27 and the exhaust duct 32 with respect to the retainer 20. As the wafer can be dried at a lower speed rotation than spin drying, it is possible to prevent the damages or the contamination of the wafer, or the occurrence of the water mark, while removing the natural oxide film of the wafer. The pivot speed of the steam nozzle and the exhaust duct is gradually decreased from the center to the circumference, whereby as a unit contact time period of steam can be made uniform, the wafer can uniformly be dried as a whole. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus, and more particularly to a substrate cleaning and drying technique. For example, in a method of manufacturing a semiconductor integrated circuit device (hereinafter referred to as an IC), a semiconductor wafer (hereinafter referred to as a wafer) in which an IC is formed. ) Is effective for diffusing impurities or forming a CVD film such as an insulating film or a metal film.

As a substrate processing apparatus for forming a CVD film on a wafer in an IC manufacturing method, a cassette chamber (wafer carrier) containing a plurality of wafers is stored, a cassette chamber having an airtight structure in which wafers are taken in and out, a cassette in the cassette chamber, A vertical type equipped with a load lock chamber (wafer transfer chamber) having a wafer transfer device for transferring wafers to and from the boat, and a reaction chamber (processing chamber) into which the boat in the load lock chamber is loaded and unloaded. There is a diffusion / CVD apparatus (see, for example, Patent Document 1).
This vertical diffusion / CVD apparatus has a problem in that a natural oxide film is formed on the wafer because it is inevitable that the wafer is exposed to the atmosphere before being loaded into the load lock chamber. Therefore, it is conceivable to remove a natural oxide film formed on the wafer immediately before being loaded into the load lock chamber by installing a cleaning / drying apparatus as an oxide film removing apparatus in the vertical diffusion / CVD apparatus.
As a conventional cleaning / drying apparatus of this type, there is an apparatus in which an etching solution such as hydrofluoric acid (HF) is dropped onto a wafer for cleaning, and then the wafer is rotated at high speed to dry (for example, see Non-Patent Document 1). ).
Japanese Patent Publication No. 7-101675 “Electronic Materials November 2002 issue separate volume”, Industrial Research Council, Inc., November 27, 2002, p. 81-85

However, the above-described cleaning / drying apparatus has the following problems.
(1) At the time of drying, since the centrifugal force due to the rotation is zero at the center of the wafer, the etching solution tends to remain even when rotated at a high speed, and as a result, a water mark is generated.
(2) Since the wafer rotates at a high speed, the wafer is damaged or chipped.
(3) Since the wafer is charged by high-speed rotation, particles are electrostatically adsorbed on the surface of the wafer.
(4) The etching solution sprinkled off by centrifugal force hits the wall surface of the processing chamber and bounces off and reattaches to the dried wafer, thereby generating a water mark.
(5) A seal ring is laid to prevent the etchant from entering the rotating shaft that rotates the wafer. However, contamination of the wafer due to dust generation from the sliding part occurs, and the sealing performance is ensured. Therefore, maintenance such as periodic replacement of the seal ring is required.
(6) Since the etchant entering the trench or contact hole is difficult to remove, a water mark is generated.

  An object of the present invention is to provide a substrate processing apparatus capable of removing a natural oxide film on a substrate while preventing breakage and contamination of the substrate and generation of a watermark.

The substrate processing apparatus according to the present invention includes a processing chamber for holding and processing a substrate by a holder, a chemical nozzle for supplying a chemical to the substrate held by the holder, and the substrate held by the holder. A drying gas nozzle that blows drying gas on the rotating shaft, a rotating shaft that rotates the holder, and a moving drive device that moves the drying gas nozzle relative to the holding tool. The gas nozzle is controlled to move from the center of the substrate to the periphery.
Representative examples of other inventions disclosed in the present application are as follows.
(1) A processing chamber for holding and processing a substrate by a holder, a chemical nozzle for supplying a chemical to the substrate held by the holder, and a drying gas being sprayed on the substrate held by the holder A drying gas nozzle, an exhaust duct that exhausts most of the drying gas sprayed onto the substrate, a rotating shaft that rotates the holder, and the drying gas nozzle and the exhaust duct are moved relative to the holder. It is characterized by comprising a moving drive device.
(2) A processing chamber for holding and processing a substrate by a holder, a chemical nozzle for supplying a chemical to the substrate held by the holder, and a drying gas being sprayed on the substrate held by the holder A drying gas nozzle; an exhaust duct that exhausts most of the drying gas sprayed onto the substrate; a rotating shaft that rotates the holder; and the drying gas nozzle and the exhaust duct are moved relative to the holder. An oxide film removing apparatus comprising a movement driving device.
(3) A processing chamber for processing a substrate, a spare chamber adjacent to the processing chamber, a substrate transfer chamber in which a substrate transfer device adjacent to the preliminary chamber is installed to transport the substrate, and the substrate transfer An oxide film removing device installed adjacent to the chamber, the oxide film removing device holding and processing the substrate by a holder, and the substrate held by the holder A chemical solution supply nozzle for supplying a chemical solution to the substrate, a drying gas nozzle for spraying a drying gas onto the substrate held by a holder, and an exhaust duct for exhausting most of the drying gas sprayed on the substrate. A substrate processing apparatus.
(4) A movement drive device for moving the chemical nozzle with respect to the holder is provided.
(5) A method of manufacturing a semiconductor device using (3) above, wherein the holder is rotated and the drying gas nozzle and the exhaust duct are moved relative to the holder while the drying gas is applied to the substrate. A method of manufacturing a semiconductor device comprising the step of spraying the substrate with the nozzle.

  According to the present invention, since the substrate can be dried at a low speed, the natural oxide film on the substrate can be removed while preventing the substrate from being damaged or contaminated and generating a water mark.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  In this embodiment, a substrate processing apparatus according to the present invention is configured as an oxide film removing apparatus for removing a natural oxide film formed on a wafer in an IC manufacturing method. As shown in FIGS. 1 and 2, the oxide film removing apparatus 10 according to the present embodiment includes a casing (hereinafter referred to as a removal chamber casing) in which an oxide film removing chamber (hereinafter referred to as a removal chamber) 12 is formed. 11). The removal chamber casing 11 is formed in a cylindrical hollow body whose upper and lower surfaces are closed, and the surface of the removal chamber 12 is formed into a surface having good water repellency by a coating treatment with a fluorine resin. A wafer loading / unloading port 13 is opened at the front portion of the side wall of the removal chamber casing 11, and the wafer loading / unloading port 13 is configured to be able to load / unload the wafer 1 to / from the removal chamber 12. A gate valve 14 is installed at the wafer loading / unloading port 13, and the gate valve 14 is configured to open and close the wafer loading / unloading port 13 without sliding. Note that an inert gas supply device 44 that supplies an inert gas to the removal chamber 12 is connected to the removal chamber casing 11, and an exhaust device 45 that exhausts the removal chamber 12 is connected to the removal chamber casing 11.

  Below the central portion of the removal chamber casing 11, a motor 15 capable of controlling the rotation speed from a low speed region to a high speed region is installed vertically upward. A rotary shaft 18 is connected to the output shaft 16 of the motor 15 with a cup. They are connected by a ring 17. The rotary shaft 18 passes through the bottom wall of the removal chamber casing 11 and is inserted into the removal chamber 12 and is rotatably supported by a bearing device 19 with a seal mechanism. A holder 20 that holds the wafer 1 horizontally is connected to the upper end of the rotating shaft 18. The holder 20 is formed in a disk shape having a slightly larger diameter than the wafer 1, and is configured to detachably hold the wafer 1 by a plurality of holding pins 21 protruding on the upper surface. A frusto-conical cylindrical skirt 22 is suspended concentrically on the periphery of the lower surface of the holder 20, and the skirt 22 constitutes a mechanical seal that prevents an etchant or the like from entering in the direction of the rotary shaft 18. ing.

  A chemical nozzle 24 for dropping an etchant and ultrapure water as a chemical solution is inserted in the peripheral portion of the bottom wall of the removal chamber casing 11, and the periphery of the chemical nozzle 24 on the bottom wall of the removal chamber casing 11 is Sealed by a sealing device 23. The chemical nozzle 24 is configured such that the dropping port 24 a is disposed on the center line of the holder 20, and drops the etching solution and ultrapure water on the center of the wafer 1. One end of a liquid supply pipe 25 is connected to the chemical liquid nozzle 24, and the other end of the liquid supply pipe 25 is supplied with a chemical liquid supply apparatus that supplies an etching liquid such as hydrofluoric acid as a cleaning liquid and ultrapure water as a rinse liquid. 26 is connected.

A nozzle (hereinafter referred to as a steam nozzle) 27 that blows out water vapor (steam) as a drying gas is inserted in a position 180 degrees away from the chemical nozzle 24 in the peripheral portion of the bottom wall of the removal chamber casing 11. The steam nozzle 27 is configured such that its outlet 27 a is positioned on the center line of the holder 20. One end of an air supply pipe 28 is connected to the steam nozzle 27, and a steam supply device 29 that supplies steam (H ₂ O) as a drying gas to the other end of the air supply pipe 28 is a steam supply valve from the upstream side. 30 and a filter 31. The steam nozzle 27 is provided with a temperature sensor (not shown). The steam nozzle 27 has a chemical-resistant surface treatment on its inner surface.

  An exhaust duct 32 for exhausting steam is inserted in the position of the steam nozzle 27 on the bottom wall of the removal chamber casing 11, and the steam nozzle 27 is laid on the center line of the hollow portion of the exhaust duct 32. The exhaust duct 32 is formed in an elbow pipe shape, and a suction port 33 for sucking steam is formed in a hood shape so as to surround the outlet 27 a of the steam nozzle 27 at one end opening of the exhaust duct 32. The exhaust duct 32 is configured to also serve as an arm for turning the suction port 33 and the outlet 27a of the steam nozzle 27 in a horizontal plane. That is, the exhaust duct 32 passes through the bottom wall of the removal chamber casing 11 and is inserted into the removal chamber 12, and is rotatably supported by the bearing device 34 with a seal mechanism so that the exhaust duct 32 is swung by the swivel driving device 35. It is configured. The turning drive device 35 is configured so that the moving speed of the turning of the exhaust duct 32 can be arbitrarily variably set. One end of an exhaust pipe 36 is connected to the exhaust duct 32, and an exhaust device 37 is connected to the other end of the exhaust pipe 36 via a trap 38 that cools steam and captures moisture. A collection tank 39 is connected to the trap 38 via a drain valve 40. A heater 41 (see FIG. 3) is laid inside the cylindrical wall of the exhaust duct 32, and the surface of the hollow portion of the exhaust duct 32 is configured to be a chemical-resistant and water-repellent surface by a fluorine resin coating process. Has been.

  Hereinafter, an oxide film removing process in the IC manufacturing method using the oxide film removing apparatus 10 according to the above configuration will be described.

  When the wafer 1 to be processed is transferred to the oxide film removing apparatus 10, the wafer loading / unloading port 13 is opened by the gate valve 14. Next, the wafer 1 is loaded into the removal chamber 12 through the wafer loading / unloading port 13 by the wafer transfer device (not shown) and transferred to the holder 20. The wafer 1 transferred to the holder 20 is held by the holding pins 21. When the wafer 1 is held, the wafer loading / unloading port 13 is closed by the gate valve 14.

  Next, the wafer 1 held by the holder 20 is rotated by the motor 15. Subsequently, the etching solution is supplied from the chemical solution supply device 26 to the chemical nozzle 24 through the liquid supply pipe 25 to the removal chamber 12 and dropped from the dropping port 24 a of the chemical nozzle 24 to the center of the wafer 1. At this time, the exhaust duct 32 is retracted to a position indicated by a solid line in FIG. The etching solution dropped on the center of the wafer 1 is uniformly diffused to the peripheral portion by the centrifugal force of the rotating wafer 1, thereby uniformly contacting the entire surface of the wafer 1, and thus formed on the surface of the wafer 1. The natural oxide film thus formed is removed by etching uniformly over the entire surface. Excess etching solution shaken off by the wafer 1 is collected by the bottom of the removal chamber 12. When a preset time has elapsed, the supply of the etching solution is stopped.

  Next, ultrapure water as a rinsing liquid is supplied from the chemical liquid supply device 26 to the chemical liquid nozzle 24 through the liquid supply pipe 25, and is dropped from the dropping port 24 a of the chemical liquid nozzle 24 to the center of the wafer 1. Since the ultrapure water dropped on the center of the wafer 1 is diffused to the peripheral portion by the centrifugal force of the rotating wafer 1, the ultrapure water contacts the entire surface of the wafer 1 uniformly. Rinse evenly throughout. Excess ultrapure water shaken off by the wafer 1 is collected by the bottom of the removal chamber 12. When a preset time elapses, the supply of ultrapure water is stopped.

  After rinsing, steam 42 (see FIG. 3) is supplied to the removal chamber 12 from the steam supply device 29 to the steam nozzle 27 through the air supply pipe 28, blown to the wafer 1 from the outlet 27a of the steam nozzle 27, and exhaust duct. 32 is exhausted through the exhaust pipe 36 by the exhaust device 37, whereby the steam 42 is sucked from the suction port 33 and exhausted. The steam 42 in contact with the wafer 1 heats and vaporizes the ultrapure water as the rinse liquid remaining on the surface of the wafer 1, thereby drying the wafer 1. As the steam 42, high-temperature steam of about 200 ° C. obtained by heating ultrapure water is used. However, it is preferably around 200 ° C., but may be 100 ° C. or more.

  At this time, as shown in FIG. 3, the steam 42 blown to the surface of the wafer 1 from the outlet 27 a of the steam nozzle 27 is reflected at an acute angle on the upper surface of the wafer 1, and the suction port 33 of the exhaust duct 32. In order to be sucked in immediately, it is sucked in a steam state (gas state) without being liquefied. That is, it is possible to prevent the steam 42 that has dried the wafer 1 from being liquefied to form water droplets, and the water droplets reattaching to the wafer 1 to cause a phenomenon that causes a watermark.

  Further, since the exhaust duct 32 is heated to around 200 ° C. by the heater 41, the steam 42 flowing through the exhaust duct 32 is exhausted while remaining in a gas state without forming water droplets. In addition, since the surface of the hollow portion of the exhaust duct 32 is configured to have a good water repellency by the coating treatment of fluororesin, the steam 42 is not attached to the hollow portion of the exhaust duct 32 or stagnated. Continue to flow down properly. The heating temperature of the exhaust duct 32 is preferably a temperature at which high-temperature steam of about 200 ° C. heated with ultrapure water can be maintained, but may be 100 ° C. or higher.

  Incidentally, the steam 42 exhausted to the exhaust pipe 36 in the gas state is recovered in the form of a liquid by being cooled and condensed in the trap 38. Since this waste liquid contains the components of the etching liquid, it is preferable that the waste liquid be recovered by the recovery tank 39 and disposed of. The steam in the trap 38 can be cooled by natural air cooling, forced air cooling using a cooling fan, water cooling using factory water supply, solid cooling using a Peltier element, or the like. Further, as the exhaust device 37 for exhausting the steam 42, a diaphragm pump using a fluororesin diaphragm that has corrosion resistance to the etching solution and can exhaust moisture-containing gas is used. It is desirable.

  The steam nozzle 27 and the exhaust duct 32 are both turned by the turning drive device 35 during the steam blowing step and the exhausting step. The steam 42 blown out from the outlet 27a of the steam nozzle 27 is in contact with the entire surface of the wafer 1 together with the rotation of the wafer 1, so that the surface of the wafer 1 is uniformly dried. . At this time, since the wafer 1 is dried by the vaporization force of the steam 42, the wafer 1 does not need to be rotated at a high speed, and may be rotated at a low speed such that the steam 42 is uniformly sprayed on the wafer 1.

  By the way, the peripheral speed of the rotating wafer 1 increases as it goes from the center to the periphery. Therefore, if the turning speed from the center to the periphery of the steam nozzle 27 and the exhaust duct 32 by the turning drive device 35 is constant, the steam 42 The unit contact time with the wafer 1 gradually decreases from the center toward the periphery, and the drying of the wafer 1 tends to be excessive at the center and insufficient at the periphery. Therefore, in the present embodiment, as shown in FIG. 4, the turning drive device is configured so that the turning speed 43 from the center to the periphery of the steam nozzle 27 and the exhaust duct 32 decreases from the center to the periphery. 35 is controlled. With this control, the unit contact time of the steam 42 with the wafer 1 is constant from the center to the periphery, so that the drying of the wafer 1 is equal between the center and the periphery, and the drying of the wafer 1 is uniform throughout. . Further, since the drying time by the steam 42 is optimized, the drying time of the wafer 1 is also shortened. After drying, the atmosphere in the removal chamber 12 is replaced with an inert gas (for example, nitrogen gas) as necessary.

  Thereafter, the wafer loading / unloading port 13 is opened by the gate valve 14. Subsequently, the natural oxide film removed and dried wafer 1 held by the holder 20 is picked up by the wafer transfer device and carried out through the wafer loading / unloading port 13.

  Thereafter, the natural oxide film removing process is performed one by one on the wafer 1 by repeating the above-described operation.

  According to the embodiment, the following effects can be obtained.

1) Since the centrifugal force of the etching solution adhering to the wafer is reduced by drying the wafer at a low speed, it is possible to reduce the splashing of the water droplets protruding from the wafer from the wall of the removal chamber. As a result, since the mist floating in the removal chamber can be suppressed, reattachment to the wafer can be prevented, and generation of a water mark can be prevented.

2) Since the wear of the seal ring can be reduced by rotating the wafer at a low speed, the maintenance cycle (seal ring replacement cycle) time can be extended compared to the spin drying that rotates at a high speed. .

3) By rotating the wafer at a low speed, the amount of dust generated from the rotation mechanism can be reduced, and the seal structure can be simplified.

4) Since the generation of static electricity can be suppressed by rotating the wafer at a low speed, it is possible to prevent particles from adhering to the surface of the wafer.

5) By rotating the wafer at a low speed, the structure of the holder for holding the wafer can be simplified compared to spin drying in which the wafer is rotated at a high speed.

6) By rotating the wafer at a low speed, it is possible to prevent the wafer from being damaged and chipping, so that the yield and throughput can be improved.

7) During the drying step, high temperature steam is sprayed onto the wafer, so that organic matter adhering to the wafer can be decomposed and removed by the heat of the steam simultaneously with the drying of the wafer.

8) By spraying high temperature steam on the wafer during the drying step, moisture adhering to minute recesses such as trenches and contact holes can be vaporized and removed by the heat of the steam.

9) By rotating the wafer during cleaning and drying, the etching solution, rinsing solution and steam can be brought into more uniform contact with the wafer, so that the wafer can be made more uniform without causing irregularities such as water marks. Can be washed and dried.

10) By controlling the swivel drive so that the swirl speed from the center to the periphery of the steam nozzle and exhaust duct decreases from the center to the periphery, the unit contact time of the steam with the wafer is constant from the center to the periphery. Therefore, the drying of the wafer can be controlled equally in the central portion and the peripheral portion, the wafer can be uniformly dried over the entire portion, and the wafer drying time can be shortened.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, the turning speed of the steam nozzle and the exhaust duct from the center to the periphery is not limited to be controlled steplessly as it goes from the center to the periphery, but may be controlled to decrease stepwise.

  The movement drive device that moves the steam nozzle and the exhaust duct with respect to the holder is not limited to a swivel (circular motion) drive device, and the movement that linearly translates the steam nozzle and the exhaust duct with respect to the holder. You may comprise by a drive device.

  The steam nozzle is not limited to be installed in the exhaust duct, and the steam nozzle may be piped separately from the exhaust duct. Furthermore, the steam nozzle or the exhaust duct may be laid inside the wall of the removal chamber housing, and an opening may be opened on the inner surface thereof.

5, 6 and 7 show a second embodiment of the present invention.
In this embodiment, the substrate processing apparatus according to the present invention is a batch type used in a process of diffusing impurities on a wafer or forming a CVD film such as an insulating film or a metal film in an IC manufacturing method. It is configured as a vertical diffusion / CVD apparatus (hereinafter referred to as a batch type CVD apparatus). In batch type CVD apparatus 50 according to the present embodiment, FOUP (front opening unified pod, hereinafter referred to as pod) is used as a wafer carrier for wafer transfer. In the following description, front, rear, left and right are based on FIG. That is, the front casing 51 side is the front side, the pressure-resistant casing 81 side, which is the opposite side, is the rear side, the boat elevator 100 side is the left side, and the seal cap 103 side, which is the opposite side, is the right side.

  As shown in FIGS. 5 and 6, the batch-type CVD apparatus 50 includes a front casing 51 that can maintain a pressure higher than atmospheric pressure (hereinafter referred to as positive pressure). A pod storage chamber 52 is formed. A pod loading / unloading port 53 is opened on the front wall of the front housing 51, and a pod stage 54 is constructed in front of the pod loading / unloading port 53 of the front housing 51. The pod 2 is supplied to and discharged from the pod stage 54 by an in-process transfer device such as RGV. A front pod shelf 55 and a rear pod shelf 56 are respectively installed in the upper part of the front casing 51, and these pod shelves 55 and 56 are configured to temporarily store a plurality of pods 2. ing. A pod transfer device 57 configured by a linear actuator, an elevator, a SCARA robot, or the like is installed in the front portion of the front casing 51. The pod transfer device 57 includes a pod stage 54, front and rear pod shelves 55 and 56, and a pod. It is comprised so that the pod 2 may be conveyed between openers.

A casing (hereinafter referred to as a pod opener casing) 61 that forms a pod opener chamber 60 is installed adjacent to the rear wall of the front casing 51, and a wafer is carried into the rear wall of the pod opener chamber 60. A gate valve 62 that opens and closes the outlet 73 is provided. A gas supply pipe 63 for supplying nitrogen (N ₂ ) gas to the pod opener chamber 60 and an exhaust pipe 64 for exhausting the pod opener chamber 60 to a negative pressure are provided on the side wall of the pod opener casing 61. It is connected. The supply of nitrogen gas is not provided by the gas supply pipe 63, and the filled nitrogen gas may flow into the transfer chamber by opening the gate valve 62, or the exhaust pipe 64 is not provided. The air may be exhausted from the gap between the pod 2 and the pod opener chamber housing. A wafer loading / unloading port 65 is opened on the front wall of the pod opener casing 61, and a mounting table 66 on which the pod 2 is placed is placed horizontally at the lower end side of the wafer loading / unloading port 65 in front of the pod opener casing 61. It is projecting. A cap attaching / detaching mechanism 67 for attaching / detaching the cap of the pod 2 placed on the placing table 66 is installed inside the pod opener chamber 60, and the cap of the pod 2 placed on the placing table 66 is attached to the cap attaching / detaching mechanism 67. By attaching / detaching, the wafer loading / unloading opening of the pod 2 is opened and closed.

  The back wall of the pod opener casing 61 is connected to a pressure-resistant casing 71 having airtightness capable of maintaining a pressure lower than atmospheric pressure (hereinafter referred to as negative pressure), and the wafer transfer chamber 72 has a pressure resistance. A housing (hereinafter referred to as a transfer chamber housing) 71 is formed. A wafer loading / unloading port 73 is opened in the wafer transfer chamber 72, and the wafer loading / unloading port 73 is configured to be opened and closed by a gate valve 62. A wafer transfer device 74 for transferring the wafer 1 under a negative pressure is horizontally installed in the wafer transfer chamber 72, and the wafer transfer device 74 is constituted by a SCARA robot (selective compliance assembly robot arm). ing. In order to prevent foreign matter from entering the wafer transfer chamber 72 and the standby chamber 82, a motor 75 that is a drive unit of the wafer transfer device 74 is installed outside the bottom wall of the wafer transfer chamber 72. An exhaust pipe 76 for exhausting the wafer transfer chamber 72 to a negative pressure is connected to the side wall of the transfer chamber casing 71. A pressure adjusting device and a pressure sensor (not shown) are connected to the wafer transfer chamber 72, and the pressure adjusting device is configured to adjust the pressure of the wafer transfer chamber 72 based on the detection of the pressure sensor. ing.

  On the opposite side of the wafer transfer chamber 72 from the wafer transfer device 74, a pair of stockers 77A and 77B as temporary substrate holders are arranged side by side. Both stockers 77A and 77B have the same structure as a boat described later, and are configured to hold the number of wafers 1 that is greater than or equal to the maximum number that can be held by the boat. A shielding plate 78 as a shielding means is vertically installed between the front stocker 77A and the rear stocker 77B of the wafer transfer chamber 72, and the shielding plate 78 is located between the front stocker 77A and the rear stocker 77B. It is comprised so that the heat | fever may be interrupted | blocked. A front gas blowing pipe 79A and a rear gas blowing pipe 79B for blowing out nitrogen gas are respectively installed in the vicinity of the front stocker 77A and the rear stocker 77B on the opposite side of the wafer transfer device 74. The pipe 79A and the rear gas outlet pipe 79B are configured to blow nitrogen gas to the front stocker 77A and the rear stocker 77B, respectively.

As shown in FIG. 5, a pressure-resistant housing 81 having airtightness capable of maintaining a negative pressure is provided adjacent to the rear side of the transfer chamber housing 71, and the pressure-resistant housing 81 A standby chamber 82, which is a load lock type spare chamber having a volume capable of accommodating a boat, is formed. Note that the load lock method uses a gate valve or other gate valve to isolate the processing chamber from the spare chamber, preventing inflow of air into the processing chamber, and reducing disturbances such as temperature and pressure. It is a method to stabilize. A wafer loading / unloading port 83 and a wafer loading / unloading port 80 are respectively provided on the front wall of the pressure-resistant housing (hereinafter referred to as a standby chamber housing) 81 and the rear wall of the transfer chamber housing 71. The loading / unloading ports 83 and 80 are configured to be opened and closed by a gate valve 84. A gas supply pipe 85 for supplying nitrogen (N ₂ ) gas to the standby chamber 82 and an exhaust pipe 86 for exhausting the standby chamber 82 to a negative pressure are respectively provided on the pair of side walls of the standby chamber casing 81. It is connected.

As shown in FIGS. 6 and 7, a boat loading / unloading port 87 is widely opened on the ceiling wall of the standby chamber 82, and the boat loading / unloading port 87 is opened and closed by a shutter 88 as a gate valve. It is configured. A heater unit 90 is installed in a vertical direction inside a casing 89 constructed on the standby chamber casing 81, and a process tube 92 forming a processing chamber 91 is installed inside the heater unit 90. Yes. The process tube 92 is made of quartz (SiO ₂ ) and has an outer tube 93 formed in a cylindrical shape with the upper end closed and the lower end opened, and a cylindrical shape made of quartz or silicon carbide (SiC) and opened at both upper and lower ends. The outer tube 93 is concentrically covered with the inner tube 94. An annular exhaust path 95 is formed between the outer tube 93 and the inner tube 94 by a gap therebetween. The process tube 92 is supported on the ceiling wall of the standby chamber casing 81 via a manifold 96, and the manifold 96 is arranged concentrically at the boat loading / unloading port 87. A gas introduction pipe 97 for introducing a raw material gas, a purge gas or the like into the processing chamber 91 and an exhaust pipe 98 for exhausting the inside of the process tube 92 are connected to the manifold 96. The exhaust pipe 98 is exhausted. It communicates with the road 95. A thermocouple 99 is inserted into the process tube 92, and feedback control of the heater unit 90 is performed by the side temperature of the thermocouple 99.

  The waiting room 82 is provided with a boat elevator 100 for raising and lowering the boat, and the boat elevator 100 is constituted by a feed screw device, a bellows, or the like. An arm 102 is horizontally provided on the side surface of the lift 101 of the boat elevator 100, and a seal cap 103 is horizontally installed on the tip of the arm 102. The seal cap 103 is configured to hermetically seal the boat loading / unloading port 87 of the standby chamber casing 81 serving as the furnace port of the process tube 92 and is configured to vertically support the boat 104 serving as a substrate holder. Has been. The boat 104 lifts and lowers the seal cap 103 by the boat elevator 100 in a state where a plurality of wafers 1 (for example, 25, 50, 100, 125, 150, etc.) are horizontally supported with their centers aligned. Accordingly, the process tube 92 is configured to be carried into and out of the processing chamber 91. The boat 104 is configured to be rotated by a rotary actuator 105 installed on the seal cap 103.

  As shown in FIG. 5, an oxide film removing apparatus 10 </ b> A is installed on the right side of the transfer chamber casing 71. A wafer loading / unloading port 13A is opened on the right side wall of the transfer chamber casing 71, and the wafer loading / unloading port 13A is configured so that the wafer 1 can be loaded into and unloaded from the wafer transfer chamber 72. A removal chamber casing 11A of the oxide film removing apparatus 10A is installed adjacent to the right side of the transfer chamber casing 71, and a wafer loading / unloading port 13 is opened on the left side wall of the removal chamber casing 11A. Yes. The wafer loading / unloading ports 13A and 13 are opened and closed by a gate valve 14. The oxide film removing apparatus 10A according to the present embodiment is different from the oxide film removing apparatus 10 according to the above embodiment in that the removal chamber casing 11A is formed in a substantially cubic shape.

  Hereinafter, a film forming process in an IC manufacturing method using the batch type CVD apparatus according to the above configuration will be described. In the present embodiment, a case will be described in which batch processing (batch processing) of up to 25 wafers 1 housed in one pod 2 is performed.

  The wafer 1 to be deposited is transported to the pod stage 54 of the batch type CVD apparatus 50 by the in-process transport apparatus in a state where up to 25 wafers 1 are accommodated in the pod 2. The pod 2 that has been transported is transported from the pod stage 54 to a designated location on the front pod shelf 55 or the rear pod shelf 56 by the pod transport device 57 and stored.

  The pod 2 in which the wafer 1 is stored is transferred onto the mounting table 66 by the pod transfer device 57 and mounted thereon. Nitrogen gas is supplied to the pod opener chamber 60 through the gas supply pipe 63 and exhausted through the exhaust pipe 64, so that the nitrogen gas is filled (nitrogen gas purge). At this time, the oxygen concentration in the pod opener chamber 60 is preferably 20 ppm or less. The cap of the placed pod 2 is removed by the cap attaching / detaching mechanism 67, and the wafer loading / unloading port of the pod 2 is opened. Nitrogen gas is blown into the wafer inlet / outlet of the pod 2 from a nitrogen gas supply nozzle laid in the pod opener chamber 60, and the atmosphere of the wafer storage chamber of the pod 2 is purged with nitrogen gas. At this time, the oxygen concentration in the wafer storage chamber of the pod 2 is preferably 20 ppm or less. Thereafter, the wafer loading / unloading port 73 is opened by the gate valve 62. At this time, the wafer transfer chamber 72 is filled with nitrogen gas (nitrogen gas purge).

  When the pod 2 is opened, the wafer 1 is picked up from the pod 2 by the wafer transfer device 74 through the wafer loading / unloading port 73 and loaded into the wafer transfer chamber 72. The wafer 1 loaded into the wafer transfer chamber 72 is transferred by the wafer transfer device 74 to the front stocker 77A, which is one stocker of the wafer transfer chamber 72. When all the wafers 1 in the pod 2 are transferred to the front stocker 77A and loaded (wafer charging), the wafer loading / unloading port 73 is closed by the gate valve 62. When the wafer loading / unloading port 73 is closed, the supply of nitrogen gas to the pod opener chamber 60 is stopped. Incidentally, the empty pod 2 is temporarily returned from the mounting table 66 to the pod shelf 55 or 56 by the pod transfer device 57.

  Next, the wafer loading / unloading outlets 13 </ b> A and 13 are opened by the gate valve 14. Subsequently, the wafer 1 loaded in the front stocker 77A is picked up by the wafer transfer device 74, and is loaded into the removal chamber 12A of the oxide film removal device 10A through the wafer loading / unloading ports 13A and 13 and transferred to the holder 20. It will be posted. The wafer 1 transferred to the holder 20 is held by the holder 20. When the wafer 1 is held, the wafer loading / unloading ports 13 </ b> A and 13 are closed by the gate valve 14.

  Thereafter, in the oxide film removing apparatus 10A, the natural oxide film removing step (cleaning step, rinsing step, and drying step) of the wafer 1 is performed in the same manner as in the above embodiment. When the natural oxide film removal step of the wafer 1 is completed, the wafer loading / unloading ports 13A and 13 are opened by the gate valve 14. Subsequently, the natural oxide film-removed wafer 1 held by the holder 20 is picked up by the wafer transfer device 74 and transferred into the wafer transfer chamber 72 through the wafer loading / unloading ports 13A and 13 and into the front stocker 77A. Reprinted. When the transfer of the wafer 1 is completed, the wafer loading / unloading ports 13A and 13 are closed by the gate valve 14.

  Thereafter, by repeating the operation described above, the natural oxide film removal step is performed one by one for all the wafers 1 of the front stocker 77A, and the natural oxide film removal step is completed for all the wafers 1 of the front stocker 77A. The

  When the natural oxide film removal step is completed for all the wafers 1 in the front stocker 77A, the wafer transfer chamber 72 is evacuated by the exhaust pipe 66, so that the pressure in the wafer transfer chamber 72 is equal to the pressure in the standby chamber 82. Depressurized. At this time, since the volume of the wafer transfer chamber 72 is smaller than that of the standby chamber 82, the decompression time can be short. When the wafer transfer chamber 72 is decompressed in the same manner as the standby chamber 82, the wafer loading / unloading ports 80 and 83 are opened by the gate valve 84.

  Subsequently, the natural oxide film-removed wafer 1 loaded in the front stocker 77A is picked up by the wafer transfer device 74 and loaded into the waiting chamber 82 through the wafer loading / unloading ports 80 and 83, and the boat in the waiting chamber 82 is loaded. 104.

  Thereafter, the transfer operation of the wafer 1 from the front stocker 77A to the boat 104 by the wafer transfer device 74 is repeated. During this time, since the wafer transfer chamber 72 and the standby chamber 82 are depressurized to a negative pressure, a phenomenon in which the wafer 1 from which the natural oxide film has been removed is naturally oxidized during the transfer can be prevented. Further, since the boat loading / unloading port 87 is closed by the shutter 88, the high temperature atmosphere of the process tube 92 is prevented from flowing into the standby chamber 82. Therefore, the wafer 1 being transferred and the transferred wafer 1 are not exposed to the high temperature atmosphere, and the occurrence of harmful effects such as natural oxidation due to the wafer 1 being exposed to the high temperature atmosphere is prevented.

  When all the wafers 1 loaded in the front stocker 77A are loaded into the boat 104, the boat loading / unloading port 87 is opened by the shutter 88. Subsequently, the seal cap 103 is lifted by the elevator 101 of the boat elevator 100, and the boat 104 supported by the seal cap 103 is placed in the processing chamber 91 of the process tube 92 as indicated by an imaginary line in FIG. 7. Carry in (boat loading). When the boat 104 reaches the upper limit, the periphery of the upper surface of the seal cap 103 that supports the boat 104 closes the boat loading / unloading port 87 in a sealed state, so that the processing chamber 91 is closed in an airtight manner. When the boat 104 is loaded into the processing chamber 91, the standby chamber 82 is maintained at a negative pressure, so that external oxygen and moisture enter the processing chamber 91 as the boat 104 is loaded into the processing chamber 91. Is definitely prevented. In addition, after loading the wafer 1 of the front stocker 77A into the boat 104, the boat 104 can be loaded into the processing chamber 91 without evacuating the standby chamber 82 or purging with nitrogen gas. Can be improved.

  Thereafter, the process chamber 91 of the process tube 92 is hermetically closed, and is exhausted by the exhaust pipe 98 so as to have a predetermined pressure, heated to a predetermined temperature by the heater unit 90, and a predetermined source gas is introduced into the gas. The pipe 97 supplies a predetermined flow rate. As a result, a desired film corresponding to preset processing conditions is formed on the wafer 1.

  In turn, when all the wafers 1 loaded in the front stocker 77A are loaded into the boat 104, the wafer loading / unloading ports 83 and 80 are closed by the gate valve 84, and the wafer transfer chamber 72 is moved to the gas blowing pipe 79A, 79B is purged with nitrogen gas. On the other hand, the pod 2 in which the next (second) batch of wafers 1 is stored is transferred onto the mounting table 66 by the pod transfer device 57 and mounted thereon. The pod opener chamber 60 is purged with nitrogen gas by supplying nitrogen gas through the gas supply pipe 63 and exhausting it through the exhaust pipe 64. Thereafter, the cap of the placed pod 2 is removed by the cap attaching / detaching mechanism 67, and the wafer loading / unloading port of the pod 2 is opened. Subsequently, nitrogen gas is blown into the wafer inlet / outlet port of the pod 2 from a nitrogen gas supply nozzle installed in the pod opener chamber 60, and the atmosphere of the wafer storage chamber of the pod 2 is purged with nitrogen gas. Thereafter, the wafer loading / unloading port 73 is opened by the gate valve 62. At this time, the wafer transfer chamber 72 is filled with nitrogen gas (nitrogen gas purge).

  When the pod 2 is opened, the wafer 1 is picked up from the pod 2 by the wafer transfer device 74 through the wafer loading / unloading port 73 and loaded into the wafer transfer chamber 72. The wafer 1 loaded into the wafer transfer chamber 72 is transferred to the rear stocker 77B of the wafer transfer chamber 72 by the wafer transfer device 74. When all the wafers 1 in the pod 2 are transferred and loaded on the rear stocker 77B, the wafer loading / unloading port 73 is closed by the gate valve 62. When the wafer loading / unloading port 73 is closed, the supply of nitrogen gas to the pod opener chamber 60 is stopped. Incidentally, the empty pod 2 is temporarily returned from the mounting table 66 to the pod shelf 55 or 56 by the pod transfer device 57.

  When the wafer loading / unloading port 73 is closed by the gate valve 62, the wafer loading / unloading ports 13A and 13 are opened by the gate valve 14, and the wafer 1 loaded in the rear stocker 77B is picked up by the wafer transfer device 74. Then, the wafer is loaded into the removal chamber 12 through the wafer loading / unloading ports 13 </ b> A and 13 and transferred to the holder 20.

  Thereafter, the natural oxide film removal step described above is repeated for the wafer 1 of the front stocker 77A, so that the natural oxide film removal step is performed for all the wafers 1 of the rear stocker 77B. Is performed for all the wafers 1 of the rear stocker 77B. The loading step and the natural oxide film removal step of the wafer 1 group on the pod 2 of the next batch and the natural oxide film removal step can proceed simultaneously with the film formation step of the previous batch, thereby preventing a decrease in throughput. be able to.

  On the other hand, when the processing time set for the film formation step on the wafer 1 for the previous batch has elapsed, the boat 104 is lowered by the boat elevator 100 as shown in FIGS. Then, the boat 104 holding the processed wafer 1 is unloaded into the standby chamber 82 (boat unloading).

  When the boat 104 is discharged to the standby chamber 82, the boat loading / unloading port 87 is closed by the shutter 88 and the wafer loading / unloading ports 83 and 80 are opened by the gate valve 84. Subsequently, the processed wafer 1 of the boat 104 that has been unloaded is unloaded (discharged) by the wafer transfer device 74, loaded into the wafer transfer chamber 72 that has been decompressed in advance, and loaded into the front stocker 77A. When all the processed wafers 1 in the boat 104 are loaded into the front stocker 77A by the wafer transfer device 74, the next batch of wafers 1 preloaded in the rear stocker 77B is transferred to the boat 104. It is transferred and loaded by the loading device 74. In this way, the wafer transfer chamber 72 in which the processed wafer 1 unloaded from the process chamber 91 to the standby chamber 82 is decompressed to the same pressure as the standby chamber 82 without purging the standby chamber 82 having a large capacity with nitrogen gas. Immediately after being transferred to the standby chamber 82, the wafer is transferred to the front stocker 77A, and then the next batch of wafers 1 is loaded from the rear stocker 77B of the wafer transfer chamber 72 into the boat 104 of the standby chamber 82. Since the time for purging the standby chamber 82 having a large capacity with nitrogen gas can be omitted, the throughput can be greatly increased.

  When the next batch of wafers 1 loaded in the rear stocker 77B is completely loaded into the boat 104, the boat loading / unloading port 87 is opened by the shutter 88. Subsequently, the seal cap 103 is raised by the elevator 101 of the boat elevator 100, and the boat 104 supported by the seal cap 103 is carried into the processing chamber 91 of the process tube 92. When the boat 104 reaches the upper limit, the peripheral portion of the upper surface of the seal cap 103 that supports the boat 104 closes the boat loading / unloading port 87 in a sealed state, so that the processing chamber 91 of the process tube 92 is airtightly closed. become. Even when the boat 104 is carried into the processing chamber 91, the standby chamber 82 is maintained at a negative pressure, so that external oxygen and moisture enter the processing chamber 91 as the boat 104 is carried into the processing chamber 91. This is definitely prevented. Furthermore, after loading the wafer 1 of the rear stocker 77B into the boat 104, the boat 104 can be carried into the processing chamber 91 without evacuating the standby chamber 82 or purging with nitrogen gas, so that the throughput is greatly increased. Can be improved.

  Thereafter, as in the case of the wafer (1) of the previous (first) batch, the processing chamber 91 of the process tube 92 is evacuated by the exhaust pipe 98 so as to have a predetermined pressure while being hermetically closed. Heated to a predetermined temperature by the heater unit 90, a predetermined source gas is supplied by the gas introduction pipe 97 by a predetermined flow rate. As a result, a desired film corresponding to the processing conditions for the wafer 1 is formed on the wafer 1 as in the previous batch.

  On the other hand, when all the wafers 1 loaded in the rear stocker 77B are loaded into the boat 104, the wafer loading / unloading ports 80 and 83 are closed by the gate valve 84, and the cooled fresh nitrogen gas as the cooling medium is fed to the front side. The processed wafer 1 loaded in the stocker 77A is directly blown by the front gas blowing pipe 79A. By blowing this nitrogen gas, the hot wafer 1 loaded in the front stocker 77A is forcibly cooled effectively. Since the forced cooling time for the processed wafer 1 loaded in the front stocker 77A can be sufficiently ensured corresponding to the processing time of the film forming step for the next (second) batch, (first) The processed wafer 1 can be sufficiently cooled. In addition, since the forced cooling step of the processed wafer 1 is performed at the same time as the film forming step for the next (second) batch of wafers 1, the cooling waiting time is absorbed. The overall throughput of the CVD apparatus 50 is not lowered.

  When the processed wafer 1 loaded in the front stocker 77A is forcibly cooled by blowing nitrogen gas and cooled to a temperature (for example, 80 ° C. or lower) that can be stored in the pod 2, the wafer loading / unloading port 73 is a gate. Opened by valve 62. At this time, the wafer transfer chamber 72 and the pod opener chamber 60 are purged with nitrogen gas. Subsequently, the cap of the empty pod 2 mounted on the mounting table 66 is removed by the cap attaching / detaching mechanism 67, and the wafer loading / unloading port of the pod 2 is opened. When the empty pod 2 is opened, nitrogen gas is blown into the wafer inlet / outlet port of the pod 2 from a nitrogen gas supply nozzle installed in the pod opener chamber 60, and the atmosphere of the wafer storage chamber of the pod 2 is purged with nitrogen gas. Subsequently, the processed wafer 1 in the front stocker 77 </ b> A is stored in the empty pod 2 of the mounting table 66 by the wafer transfer device 74. At this time, since the processed wafer 1 is lowered to a temperature that can be stored in the pod 2, the processed wafer 1 can be safely stored in the pod 2 even when the pod 2 is made of resin. Can do.

  When all the processed wafers 1 loaded in the front stocker 77A are stored in the pod 2, the cap is mounted on the pod 2 by the cap attaching / detaching mechanism 67, and then the front pod shelf 55 or the rear pod shelf 56 is mounted from the mounting table 66. Is transported by the pod transport device 57. At this time, the wafer loading / unloading port 65 is closed by the cap attaching / detaching mechanism 67. When the pod 2 containing the processed wafer 1 is transferred from the mounting table 66, the next (third) batch of pods 2 is transferred to the mounting table 66 by the pod transfer device 57. Thereafter, the above-described operation is repeated, whereby the above-described film formation is performed on the next (third) batch of wafers 1.

  On the other hand, the pod 2 containing the processed wafers 1 of the last batch (first) batch is transported from the front pod shelf 55 or the rear pod shelf 56 to the pod stage 54, and the process from the pod stage 54 to the next processing step. It is transported by the inner transport device. The operation of storing the processed wafer 1 in the empty pod 2 can proceed at the same time during the film forming step for the wafer 1 in the subsequent batch.

  Thereafter, the above-described operation is repeated, and, for example, 25 wafers 1 are batch processed by the batch type CVD apparatus 50.

  According to the embodiment, the following effects are obtained in addition to the embodiment.

  After the natural oxide film on the wafer is removed by the oxide film removing apparatus, the wafer is transferred to the standby chamber and loaded into the processing chamber, so that the natural oxide film on the wafer can be reduced or impurities reattach. This can be reduced. Therefore, a favorable process can be ensured. For example, it is possible to form a high-quality capacitor film, suppress the breakdown voltage degradation of the capacitor insulating film, and the like.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  The pair of stockers is not limited to be used alternately, but one of them may be used as a dedicated stocker before processing and the other may be used as a dedicated stocker after processing. The stocker is not limited to being loaded with so-called product wafers as products, but may be loaded with so-called dummy wafers that are not products.

  In the above embodiment, the case of a batch type CVD apparatus has been described. However, the present invention is not limited to this and can be applied to all substrate processing apparatuses.

It is front sectional drawing which shows the oxide film removal apparatus which is one embodiment of this invention. FIG. It is an expanded sectional view of the principal part. It is a plane sectional view explaining control of a rotation drive device. It is a plane sectional view showing a batch type CVD apparatus which is a second embodiment of the present invention. FIG. It is sectional drawing which follows the VII-VII line of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate), 2 ... Pod (wafer carrier), 10, 10A ... Oxide film removal apparatus (substrate processing apparatus), 11, 11A ... Removal chamber housing, 12, 12A ... Oxide film removal chamber (processing chamber) , 13, 13A ... Wafer loading / unloading port, 14 ... Gate valve, 15 ... Motor, 16 ... Output shaft, 17 ... Coupling, 18 ... Rotating shaft, 19 ... Bearing device with seal mechanism, 20 ... Holder, 21 ... Grip Pin ... 22 ... Skirt 23 ... Sealing device 24 ... Chemical solution nozzle 24a ... Drip port 25 ... Liquid supply pipe 26 ... Chemical solution supply device 27 ... Steam nozzle (drying gas nozzle) 27a ... Blowout port 28 ... Supply pipe, 29 ... Steam supply device, 30 ... Steam supply valve, 31 ... Filter, 32 ... Exhaust duct, 33 ... Suction port, 34 ... Bearing device with seal mechanism, 35 ... Swing drive device (moving drive device) , 36 ... exhaust pipe, 37 ... exhaust device, 38 ... trap, 39 ... recovery tank, 40 ... drain valve, 41 ... heater, 42 ... steam (drying gas), 43 ... swirl speed, 44 ... inert gas supply device 45 ... Exhaust device, 50 ... Batch type CVD device (substrate processing device), 51 ... Front housing, 52 ... Pod storage room, 53 ... Pod loading / unloading port, 54 ... Pod stage, 55, 56 ... Pod shelf, 57 Pod transfer device, 60 pod opener chamber, 61 pod opener housing (pressure proof housing), 62 gate gate, 63 gas supply pipe, 64 exhaust pipe, 65 wafer loading / unloading port, 66 mounting table , 67 ... Cap attaching / detaching mechanism, 71 ... Transfer chamber housing (pressure housing), 72 ... Wafer transfer chamber, 73 ... Wafer loading / unloading port, 74 ... Wafer transfer device, 75 ... Motor, 76 ... Exhaust pipe, 77A 77B ... Stocker (substrate holder), 78 ... Shielding plate (shielding means), 79A, 79B ... Gas blowing pipe (gas blowing means), 80 ... Wafer loading / unloading port, 81 ... Standby chamber casing (pressure-resistant casing), 82: Standby chamber (preliminary chamber), 83 ... Wafer loading / unloading port, 84 ... Gate valve, 85 ... Gas supply pipe, 86 ... Exhaust pipe, 87 ... Boat loading / unloading port, 88 ... Shutter, 89 ... Housing, 90 ... Heater unit, 91 ... processing chamber, 92 ... process tube, 93 ... outer tube, 94 ... inner tube, 95 ... exhaust path, 96 ... manifold, 97 ... gas introduction pipe, 98 ... exhaust pipe, 99 ... thermocouple, 100 ... Boat elevator, 101 ... Lifting platform, 102 ... Arm, 103 ... Seal cap, 104 ... Boat (substrate holder), 105 ... Rotary actuator.

Claims (1)

  A processing chamber for holding and processing a substrate by a holder, a chemical nozzle for supplying a chemical to the substrate held by the holder, and a drying gas nozzle for blowing a drying gas to the substrate held by the holder A rotating shaft that rotates the holder, and a movement drive device that moves the drying gas nozzle relative to the holder, the movement drive device surrounding the drying gas nozzle from the center of the substrate. The substrate processing apparatus is configured to be controlled so as to be moved according to the above.

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