TW201840003A - High Voltage Depletion Mode MOS Device with Adjustable Threshold Voltage and Manufacturing Method Thereof - Google Patents

High Voltage Depletion Mode MOS Device with Adjustable Threshold Voltage and Manufacturing Method Thereof Download PDF

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TW201840003A
TW201840003A TW106114092A TW106114092A TW201840003A TW 201840003 A TW201840003 A TW 201840003A TW 106114092 A TW106114092 A TW 106114092A TW 106114092 A TW106114092 A TW 106114092A TW 201840003 A TW201840003 A TW 201840003A
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conductive
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conductive type
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voltage
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TW106114092A
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TWI621273B (en
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黃宗義
楊清堯
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立錡科技股份有限公司
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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Abstract

A high voltage depletion mode MOS device with adjustable threshold voltage comprises: a first conductive type well region; a second conductive type channel region, wherein when the channel region is in a non-depleted state, the MOS device is conductive, and when the channel region is in a depleted state, the MOS device is non-conductive; a second conductive type connection region contacted with the channel region; a first conductive type gate, for controlling the conductive condition of the MOS device; a second conductive type lightly doped diffusion region formed under a spacer layer of the gate and contacted with the channel region; a second type source region; and a second type drain region not contacted with the gate; wherein the gate has a first conductive type doping and/or a second conductive type doping, and wherein a net doping concentration of the gate is determined by a threshold voltage target.

Description

具有可調整臨界電壓之高壓空乏型MOS元件及其製造方法High-voltage empty-type MOS element with adjustable critical voltage and manufacturing method thereof

本發明係有關一種高壓空乏型金屬氧化物半導體(Metal Oxide Semiconductor, MOS)元件，特別是指一種具有可調整臨界電壓(threshold voltage)之高壓空乏型MOS元件。本發明也有關於製造具有可調整臨界電壓之高壓空乏型MOS元件之製造方法。The present invention relates to a high-voltage empty-type metal oxide semiconductor (MOS) device, and particularly to a high-voltage empty-type MOS device having an adjustable threshold voltage. The invention also relates to a manufacturing method for manufacturing a high-voltage empty-type MOS device having an adjustable threshold voltage.

一般而言，應用於例如但不限於電源供應電路等高壓電路，通常會需要不同臨界電壓之相同導電型之MOS元件，以利於高壓電路設計。第1圖揭示一種先前技術之高壓MOS元件(MOS元件1)，其中MOS元件1包含MOS元件1A與1B，MOS元件1A與1B為相同導電型之MOS元件(例如皆為NMOS)，二者之結構相似，其差別處在於MOS元件1A與1B之閘極介電層138A與138B之厚度不同(例如第1圖中MOS元件1B之閘極介電層138B之厚度較大)，使得MOS元件1A與1B可具有不同之臨界電壓。Generally speaking, when applied to high-voltage circuits such as, but not limited to, power supply circuits, MOS devices of the same conductivity type with different threshold voltages are usually required to facilitate high-voltage circuit design. FIG. 1 shows a high-voltage MOS device (MOS device 1) of the prior art. The MOS device 1 includes MOS devices 1A and 1B, and the MOS devices 1A and 1B are MOS devices of the same conductivity type (for example, both are NMOS). The structure is similar. The difference lies in the thickness of the gate dielectric layers 138A and 138B of the MOS devices 1A and 1B (for example, the thickness of the gate dielectric layer 138B of the MOS device 1B in FIG. 1 is larger), which makes the MOS device 1A It can have a different threshold voltage than 1B.

第2圖則揭示另一種先前技術之高壓MOS元件(MOS元件2)，MOS元件2A與2B之差別在於第一導電型井區12A與12B之雜質摻雜(doping)濃度不同，使得MOS元件2A與2B可具有不同之臨界電壓。Figure 2 reveals another prior art high-voltage MOS device (MOS device 2). The difference between MOS devices 2A and 2B is that the impurity doping concentrations of the first conductive well regions 12A and 12B are different, making the MOS device 2A It can have a different threshold voltage than 2B.

第1與2圖中所示之先前技術，其缺點在於皆需以額外的光罩與製程步驟才能定義與製作出不同厚度的絕緣層或是具有不同雜質摻雜濃度的導電型井區，而形成具有複數種臨界電壓之相同導電型高壓MOS元件，成本因而提高。The disadvantages of the prior art shown in Figures 1 and 2 are that additional masks and process steps are required to define and fabricate insulating layers of different thicknesses or conductive well regions with different impurity doping concentrations, and The cost of forming a high-voltage MOS device of the same conductivity type with a plurality of threshold voltages is increased.

本發明相較於第1與2圖之先前技術，不需額外之光罩與製程步驟，即可於同一基板中形成具有複數種臨界電壓之相同導電型高壓空乏型MOS元件，因而可降低成本。Compared with the prior art of FIGS. 1 and 2, the present invention can form the same conductive high-voltage empty-type MOS device with multiple threshold voltages in the same substrate without additional masks and process steps, thereby reducing costs. .

就其中一個觀點言，本發明提供了一種具有可調整臨界電壓之高壓空乏型金屬氧化物半導體 (Metal Oxide Semiconductor, MOS)元件，形成於一半導體基板，其中該半導體基板，於一縱向上，具有相對之一上表面與一下表面，該高壓空乏型MOS元件包含：一第一導電型井區，形成於該半導體基板中，且於該縱向上，位於該上表面下方並接觸於該上表面；一第二導電型通道區，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，其中該第二導電型通道區於一非空乏狀態下，該高壓空乏型MOS元件導通操作，且於一空乏狀態下，該高壓空乏型MOS元件不導通操作；一第二導電型連接區，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型通道區；一第一導電型閘極，形成於該上表面上，於該縱向上，該第一導電型閘極堆疊並接觸於該上表面上，且位於並接觸該第二導電型通道區之至少一部分區域正上方，用以控制該第二導電型通道區為該空乏狀態或該非空乏狀態；一第二導電型輕摻雜擴散區，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，並位於該第一導電型閘極之一間隔層正下方，且於該橫向上，鄰接於該第二導電型通道區；一第二導電型源極，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型輕摻雜擴散區；以及一第二導電型汲極，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型連接區，且不與該第一導電型閘極相鄰接；其中該第二導電型連接區之雜質摻雜濃度低於該第二導電型汲極之雜質摻雜濃度；其中該第一導電型閘極具有第一導電型或/及第二導電型之雜質摻雜，且該第一導電型閘極之一淨摻雜濃度根據一目標臨界電壓而決定。In one aspect, the present invention provides a high-voltage empty metal oxide semiconductor (MOS) device with an adjustable threshold voltage, which is formed on a semiconductor substrate. The semiconductor substrate, in a longitudinal direction, has Opposite one of the upper surface and the lower surface, the high-voltage empty-type MOS device includes: a first conductive well region formed in the semiconductor substrate, and located in the longitudinal direction below the upper surface and contacting the upper surface; A second conductive type channel region is formed in the first conductive type well region, and is located below the upper surface and contacts the upper surface in the longitudinal direction, wherein the second conductive type channel region is in a non-empty state. Next, the high-voltage empty-type MOS element is turned on and the high-voltage empty-type MOS element is not turned on in an empty state; a second conductive type connection region is formed in the first conductive type well region, and In the longitudinal direction, it is located below the upper surface and contacts the upper surface, and in the transverse direction, is adjacent to the second conductive type channel region; a first conductive type gate electrode is formed On the upper surface, in the longitudinal direction, the first conductive gate is stacked and contacted on the upper surface, and is located directly above at least a part of the area of the second conductive channel region, and controls the second conductive channel. The conductive type channel region is the empty state or the non-empty state; a second conductive type lightly doped diffusion region is formed in the first conductive type well region and is located below the upper surface in the longitudinal direction and is in contact with the An upper surface, which is directly below a spacer layer of the first conductivity type gate, and is adjacent to the second conductivity type channel region in the lateral direction; a second conductivity type source is formed on the first conductivity type In the well region, in the longitudinal direction, below the upper surface and in contact with the upper surface, and in the lateral direction, adjacent to the second conductivity type lightly doped diffusion region; and a second conductivity type drain electrode, Formed in the first conductive type well region, in the longitudinal direction, below the upper surface and in contact with the upper surface, and in the lateral direction, adjacent to the second conductive type connection region and not connected to the first conductive type connection region A conductive gate is connected adjacently; The impurity doping concentration of the conductive connection region is lower than the impurity doping concentration of the second conductive type drain; wherein the first conductive type gate has the first conductive type or / and the second conductive type impurity doping, and The net doping concentration of one of the first conductive gates is determined according to a target threshold voltage.

在一較佳實施例中，該基板更具有一高壓MOS元件，與該高壓空乏型MOS元件，利用對應相同的製程步驟，形成一第一導電型井區、一第二導電型源極、以及一第二導電型汲極，且該高壓MOS元件具有一第二導電型閘極。In a preferred embodiment, the substrate further has a high-voltage MOS device, and the high-voltage empty-type MOS device is formed using a corresponding process step to form a first conductive well region, a second conductive source, and A second conductivity type drain, and the high-voltage MOS device has a second conductivity type gate.

在一較佳實施例中，該高壓空乏型MOS元件更包含一場氧化區，形成於該上表面上，且堆疊並接觸於部分該第二導電型連接區之正上方，其中該第一導電型閘極靠近該第二導電型汲極側之部分區域，於該縱向上堆疊且接觸於至少一部分該場氧化區之正上方。In a preferred embodiment, the high-voltage empty-type MOS device further includes a field oxide region formed on the upper surface and stacked and contacting a portion of the second conductive type connection region directly above the first conductive type. A portion of the gate near the drain side of the second conductivity type is stacked in the longitudinal direction and contacts at least a portion directly above the field oxidation region.

就另一個觀點言，本發明也提供了一種具有可調整臨界電壓之高壓空乏型金屬氧化物半導體 (Metal Oxide Semiconductor, MOS)元件製造方法，包含以下步驟：提供一半導體基板，且於一縱向上，具有相對之一上表面與一下表面；形成一第一導電型井區於該半導體基板中，且於該縱向上，位於該上表面下方並接觸於該上表面；形成一第二導電型通道區於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，其中當該第二導電型通道區於一非空乏狀態下，該高壓空乏型MOS元件導通操作，且於一空乏狀態下，該高壓空乏型MOS元件不導通操作；形成一第二導電型連接區於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型通道區；形成一第一導電型閘極於該上表面上，且於該縱向上，該第一導電型閘極堆疊並接觸於該上表面上，且位於並接觸該第二導電型通道區之至少一部分區域正上方，用以控制該第二導電型通道區為該空乏狀態或該非空乏狀態；形成一第二導電型輕摻雜擴散區於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，並位於該第一導電型閘極之一間隔層正下方，且於該橫向上，鄰接於該第二導電型通道區；形成一第二導電型源極於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型輕摻雜擴散區；以及形成一第二導電型汲極於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型連接區，且不與該第一導電型閘極相鄰接；其中該第二導電型連接區之雜質摻雜濃度低於該第二導電型汲極之雜質摻雜濃度；其中該第一導電型閘極具有第一導電型或/及第二導電型之雜質摻雜，且該第一導電型閘極之一淨摻雜濃度根據一目標臨界電壓而決定。In another aspect, the present invention also provides a method for manufacturing a high-voltage empty metal oxide semiconductor (MOS) device with an adjustable threshold voltage. The method includes the following steps: providing a semiconductor substrate in a vertical direction; Having an upper surface and a lower surface opposite to each other; forming a first conductive well region in the semiconductor substrate, and in the longitudinal direction, located below the upper surface and contacting the upper surface; forming a second conductive type channel Is located in the first conductive well region, and in the longitudinal direction, is located below the upper surface and contacts the upper surface, wherein when the second conductive type channel region is in a non-empty state, the high-voltage empty-type MOS Element conducting operation, and in a depleted state, the high-voltage depletion-type MOS element does not conduct conducting operation; forming a second conductive type connection region in the first conductive type well region, and in the longitudinal direction, below the upper surface And contact the upper surface, and in the lateral direction, adjacent to the second conductive type channel region; forming a first conductive type gate electrode on the upper surface, and in the longitudinal direction The first conductive type gate is stacked and contacted on the upper surface, and is located directly above and in contact with at least a part of the second conductive type channel region, for controlling the second conductive type channel region to be in an empty state or the non-conductive state. Empty state; forming a second conductive type lightly doped diffusion region in the first conductive type well region, and in the longitudinal direction, located below the upper surface and in contact with the upper surface, and located in the first conductive type gate A spacer layer is directly below and adjacent to the second conductive type channel region in the lateral direction; a second conductive type source electrode is formed in the first conductive type well region and is located in the longitudinal direction in the vertical direction. The upper surface is below and in contact with the upper surface, and in the lateral direction, is adjacent to the second conductive type lightly doped diffusion region; and a second conductive type drain is formed in the first conductive type well region, and In the longitudinal direction, located below the upper surface and in contact with the upper surface, and in the transverse direction, adjacent to the second conductive type connection region and not adjacent to the first conductive type gate; wherein the second Low impurity doping concentration in the conductive connection region Impurity concentration of the second conductivity type drain; wherein the first conductivity type gate has impurity doping of the first conductivity type and / or the second conductivity type, and one of the first conductivity type gates is net doped The impurity concentration is determined based on a target threshold voltage.

在一較佳實施例中，該基板更具有一高壓MOS元件，與該高壓空乏型MOS元件，利用對應相同的製程步驟，形成一第一導電型井區、一第二導電型源極、以及一第二導電型汲極，且該高壓MOS元件具有一第二導電型閘極。In a preferred embodiment, the substrate further has a high-voltage MOS device, and the high-voltage empty-type MOS device is formed using a corresponding process step to form a first conductive well region, a second conductive source, and A second conductivity type drain, and the high-voltage MOS device has a second conductivity type gate.

在一較佳實施例中，該第一導電型閘極利用與該半導體基板中之一電晶體元件之一第一導電型源極或一第一導電型汲極相同之一微影步驟(lithography step)以及相同之一離子植入步驟形成。In a preferred embodiment, the first conductive gate uses a lithography step that is the same as a first conductive source or a first conductive drain of a transistor element in the semiconductor substrate. step) and one of the same ion implantation steps.

在一較佳實施例中，該高壓空乏型MOS元件製造方法更包含以下步驟: 形成一場氧化區於該上表面上，且堆疊並接觸於部分該第二導電型連接區之正上方，其中於該第一導電型閘極靠近該第二導電型汲極側之部分區域，該縱向上堆疊且接觸於至少一部分該場氧化區之正上方。In a preferred embodiment, the method for manufacturing a high-voltage empty-type MOS device further includes the following steps: forming a field oxide region on the upper surface, stacking and contacting a portion directly above the second conductive type connection region, wherein The first conductive type gate is close to a part of the second conductive type drain side, and is stacked vertically in contact with at least a part of the field oxide region.

底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。Detailed descriptions will be provided below through specific embodiments to make it easier to understand the purpose, technical content, features and effects of the present invention.

本發明中的圖式均屬示意，主要意在表示製程步驟以及各層之間之上下次序關係，至於形狀、厚度與寬度則並未依照比例繪製。The drawings in the present invention are schematic, and are mainly intended to represent the process steps and the order relationship between the layers. As for the shape, thickness, and width, they are not drawn to scale.

請參閱第3圖，圖中所示為本發明之具有可調整臨界電壓之高壓空乏型金屬氧化物半導體 (Metal Oxide Semiconductor, MOS)元件的一種實施例(高壓空乏型MOS元件3A與3B)，高壓空乏型MOS元件3A與3B皆為空乏型(depletion mode)高壓MOS元件。其中高壓空乏型MOS元件3A與3B形成於同一半導體基板11，其於一縱向(如圖中之虛線箭號方向，下同)上，具有相對之一上表面11’與一下表面11”， 高壓空乏型MOS元件3A與3B分別包含：第一導電型井區12A與12B、第二導電型通道區15A與15B、第二導電型連接區16A與16B、閘極13A與13B、第二導電型輕摻雜擴散區19A與19B、第二導電型源極14A與14B、以及第二導電型汲極17A與17B。需說明的是，前述之「第一導電型」與「第二導電型」係指於高壓空乏型MOS元件中，以不同導電型之雜質摻雜於半導體組成區域(例如但不限於前述之井區、源極、汲極與閘極等區域)內，使得半導體組成區域成為第一或第二導電型(例如但不限於第一導電型為P型，而第二導電型為N型，或反之亦可)。Please refer to FIG. 3, which shows an embodiment of a high-voltage empty-type metal oxide semiconductor (MOS) device with adjustable threshold voltage according to the present invention (high-voltage empty-type MOS devices 3A and 3B). Both the high-voltage depletion-type MOS devices 3A and 3B are depletion mode high-voltage MOS devices. The high-voltage empty-type MOS elements 3A and 3B are formed on the same semiconductor substrate 11 and have an opposite upper surface 11 'and a lower surface 11 "in a longitudinal direction (as indicated by the dashed arrows in the figure, the same below). The empty MOS devices 3A and 3B include: first conductive type well regions 12A and 12B, second conductive type channel regions 15A and 15B, second conductive type connection regions 16A and 16B, gate electrodes 13A and 13B, and second conductive type Lightly doped diffusion regions 19A and 19B, second conductivity type sources 14A and 14B, and second conductivity type drains 17A and 17B. It should be noted that the aforementioned "first conductivity type" and "second conductivity type" Refers to high-voltage empty depletion-type MOS devices, which are doped with impurities of different conductivity types in the semiconductor composition region (such as but not limited to the aforementioned well region, source, drain, and gate regions), so that the semiconductor composition region becomes The first or second conductivity type (for example, but not limited to, the first conductivity type is P-type, and the second conductivity type is N-type, or vice versa).

請繼續參閱第3圖，第一導電型井區12A與12B，形成於半導體基板11中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’；在一實施例中，第一導電型井區12A與12B可互相鄰接，換言之，高壓空乏型MOS元件3A與3B可形成於同一井區內。Please continue to refer to FIG. 3. The first conductive well regions 12A and 12B are formed in the semiconductor substrate 11, and are located below the upper surface 11 ′ and contact the upper surface 11 ′ in the longitudinal direction; In this case, the first conductive well regions 12A and 12B may be adjacent to each other. In other words, the high-voltage empty-type MOS elements 3A and 3B may be formed in the same well region.

第二導電型通道區15A與15B，分別形成於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，其中第二導電型通道區15A與15B分別用以於一非空乏(non-depleted)狀態下使該高壓空乏型MOS元件3A與3B導通操作，且於一空乏(depleted)狀態下使MOS元件3A與3B不導通操作。The second conductive type channel regions 15A and 15B are formed in the first conductive type well regions 12A and 12B, respectively, and in the longitudinal direction, are located below the upper surface 11 'and contact the upper surface 11', wherein the second conductive type The mode channel regions 15A and 15B are used to conduct the high-voltage empty MOS devices 3A and 3B in a non-depleted state, respectively, and to make the MOS devices 3A and 3B non-conductive in a depleted state, respectively. operating.

第二導電型連接區16A與16B，分別形成於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，且於一橫向(如圖中之實線箭號方向，下同)上，分別鄰接於第二導電型通道區15A與15B。The second conductive type connection regions 16A and 16B are respectively formed in the first conductive type well regions 12A and 12B, and in the longitudinal direction, are located below the upper surface 11 'and contact the upper surface 11', and in a lateral direction. (As indicated by the solid line arrows in the figure, the same applies below), and are respectively adjacent to the second conductive type channel regions 15A and 15B.

閘極13A與13B，形成於該上表面11’上，於該縱向上，該閘極13A與13B堆疊並鄰接於該上表面11’上，且分別位於並接觸第二導電型通道區15A與15B各自之至少一部分區域正上方，分別用以控制第二導電型通道區15A與15B為該空乏狀態或該非空乏狀態。Gates 13A and 13B are formed on the upper surface 11 '. In the longitudinal direction, the gates 13A and 13B are stacked and adjacent to the upper surface 11', and are located and contact the second conductive type channel regions 15A and 15A, respectively. At least a part of each region of 15B is directly above, and is used to control the second conductive type channel regions 15A and 15B to be the empty state or the non-empty state, respectively.

第二導電型輕摻雜擴散區19A與19B，形成於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，並位於閘極13A與13B之一間隔層135A與135B正下方，且於該橫向上，分別鄰接於第二導電型通道區15A與15B，以避免高壓空乏型MOS元件3A與3B導通操作時，發生通道不導通的狀況，且可改善短通道效應(short channel effect)。The second conductive type lightly doped diffusion regions 19A and 19B are formed in the first conductive type well regions 12A and 12B, and in the longitudinal direction, are located below the upper surface 11 'and contact the upper surface 11', and are located One of the gate layers 13A and 13B is directly below the spacer layers 135A and 135B, and in the lateral direction, adjacent to the second conductive type channel regions 15A and 15B, respectively, to avoid the occurrence of channels when the high-voltage empty MOS elements 3A and 3B are conducting. Non-conducting condition, and can improve the short channel effect.

第二導電型源極14A與14B，分別形成於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，且於該橫向上，第二導電型源極14A與14B分別鄰接於第二導電型輕摻雜擴散區19A與19B；第二導電型汲極17A與17B，分別形成於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，且於該橫向上，分別與第二導電型連接區16A與16B鄰接，且不與閘極13A與13B相鄰接；其中第二導電型連接區16A與16B之雜質摻雜濃度分別皆低於第二導電型汲極17A與17B之雜質摻雜濃度。The second conductivity type source electrodes 14A and 14B are formed in the first conductivity type well regions 12A and 12B, respectively, and in the longitudinal direction, are located below the upper surface 11 'and contact the upper surface 11', and in the lateral direction. On the other hand, the second conductivity type source electrodes 14A and 14B are adjacent to the second conductivity type lightly doped diffusion regions 19A and 19B, respectively; the second conductivity type drain electrodes 17A and 17B are respectively formed in the first conductivity type well regions 12A and 12B. , And in the longitudinal direction, is located below the upper surface 11 ′ and contacts the upper surface 11 ′, and is adjacent to the second conductive type connection regions 16A and 16B in the lateral direction, and is not adjacent to the gate electrodes 13A and 13B Adjacent to each other; the impurity doping concentrations of the second conductive type connection regions 16A and 16B are lower than the impurity doping concentrations of the second conductive type drain electrodes 17A and 17B, respectively.

在一實施例中，高壓空乏型MOS元件3A之閘極13A之雜質摻雜為第二導電型，而高壓空乏型MOS元件3B之閘極13B之雜質摻雜為第一導電型，由於閘極13A與閘極13B雜質摻雜為不同導電型，因此其工作函數(work function)亦不相同，使得高壓空乏型MOS元件3A與3B可具有不同之臨界電壓，換言之，本發明可在同一基板中，形成具有複數種臨界電壓之高壓空乏型MOS元件。其中所述之閘極雜質摻雜係指於圖中所示之閘極導電層137A與137B中，摻雜第一導電型雜質及╱或第二導電型雜質。In one embodiment, impurities of the gate electrode 13A of the high-voltage empty-type MOS device 3A are doped to the second conductivity type, and impurities of gate 13B of the high-voltage empty-type MOS device 3B are doped to the first conductive type. 13A and gate 13B impurities are doped with different conductivity types, so their work functions are also different, so that the high-voltage empty-type MOS elements 3A and 3B can have different threshold voltages. In other words, the present invention can be in the same substrate To form a high-voltage empty-type MOS device having a plurality of threshold voltages. The gate impurity doping refers to doping the first conductive type impurities and / or the second conductive type impurities in the gate conductive layers 137A and 137B shown in the figure.

此外需說明的是，所謂的高壓MOS元件，係指於正常操作時，施加於汲極的電壓高於一特定之電壓，例如5V；一般而言，高壓MOS元件的汲極與閘極間，具有第二導電型連接區(如第3A圖中16A與16B所示意之區域)，將汲極(如第3A圖中17A與17B)與閘極(如第3A圖中13A與13B)分隔，且第二導電型連接區之橫向長度根據正常操作時所承受的操作電壓而調整。此外，高壓空乏型MOS元件3A可以由高壓增強型MOS元件取代，此種組合亦屬於本發明的範圍。In addition, it should be noted that the so-called high-voltage MOS device refers to the voltage applied to the drain electrode during a normal operation is higher than a specific voltage, such as 5V; in general, between the drain and gate of the high-voltage MOS device, Having a second conductive type connection region (as indicated by 16A and 16B in FIG. 3A), separating the drain (such as 17A and 17B in FIG. 3A) from the gate (such as 13A and 13B in FIG. 3A), In addition, the lateral length of the second conductive type connection region is adjusted according to the operating voltage to which it is subjected during normal operation. In addition, the high-voltage empty MOS device 3A may be replaced by a high-voltage enhanced MOS device, and such a combination also belongs to the scope of the present invention.

在一實施例中，可於同一高壓空乏型MOS元件之閘極上同時摻雜不同導電型之雜質，舉例而言，請參閱第4圖，圖中顯示本發明之高壓空乏型MOS元件的一種實施例(高壓空乏型MOS元件4)之剖面圖，MOS元件4與上述之高壓空乏型MOS元件3B類似，其不同之處在於高壓空乏型MOS元件4之閘極導電層137同時具有雜質摻雜為第一導電型與第二導電型之閘極雜質摻雜，且其中閘極導電層137之淨雜質型態為第一導電型。需說明的是，其中第一導電型與第二導電型之閘極雜質摻雜濃度可依需求而調整，而使得高壓空乏型MOS元件4之臨界電壓更具可調整性。此外，在一較佳實施例中，同時具有雜質摻雜為第一導電型與第二導電型之閘極雜質摻雜之閘極導電層137中，於橫向、縱向以及寬度方向上，皆無顯著之第一導電型與第二導電型之接面(例如P-N接面)。In one embodiment, impurities of different conductivity types can be simultaneously doped on the gates of the same high-voltage empty-type MOS device. For example, refer to FIG. 4, which shows an implementation of the high-voltage empty-type MOS device of the present invention. Example (high-voltage empty-type MOS device 4) is a cross-sectional view. The MOS device 4 is similar to the high-voltage empty-type MOS device 3B described above, except that the gate conductive layer 137 of the high-voltage empty-type MOS device 4 also has impurity doping as Gate impurities of the first conductivity type and the second conductivity type are doped, and the net impurity type of the gate conductive layer 137 is the first conductivity type. It should be noted that the gate impurity doping concentration of the first conductivity type and the second conductivity type can be adjusted as required, so that the threshold voltage of the high-voltage empty-type MOS device 4 is more adjustable. In addition, in a preferred embodiment, the gate conductive layer 137 having gate impurities doped with both the first conductivity type and the second conductivity type is not significant in the lateral, vertical, and width directions. The interface between the first conductivity type and the second conductivity type (such as a PN interface).

值得注意的是，本發明之高壓空乏型MOS元件，可藉由前述不同型式或濃度的雜質摻雜，使得高壓空乏型MOS元件可具有可調整之臨界電壓。在一較佳實施例中，於同一基板中，本發明之高壓空乏型MOS元件可具有複數種臨界電壓之高壓空乏型MOS元件，因此可大幅增加高壓電路設計之彈性，且本發明調整臨界電壓之方式，在一較佳實施例中，可使用一般的高壓空乏型MOS元件製程步驟與光罩組合，因而可以較低的成本，在單一基板中，形成具有複數種臨界電壓之高壓空乏型MOS元件，其製程步驟之細節將詳述於後。It is worth noting that the high-voltage empty-type MOS device of the present invention can be doped with impurities of different types or concentrations, so that the high-voltage empty-type MOS device can have an adjustable threshold voltage. In a preferred embodiment, in the same substrate, the high-voltage empty-type MOS device of the present invention can have a plurality of critical voltage high-voltage empty-type MOS devices, so the flexibility of high-voltage circuit design can be greatly increased, and the present invention adjusts the threshold voltage. In a preferred embodiment, a general high-voltage empty-type MOS device process step and a photomask can be used, so that a low-cost high-voltage empty-type MOS having a plurality of threshold voltages can be formed in a single substrate at a lower cost. The details of the process steps of the components will be described later.

請參閱第5圖，圖中顯示本發明之高壓空乏型MOS元件的一種實施例(高壓空乏型MOS元件5)，高壓空乏型MOS元件5與上述之高壓空乏型MOS元件3B及4類似，其不同之處在於高壓空乏型MOS元件5更包含場氧化區18，形成於該上表面11’上，且堆疊並接觸於部分該第二導電型連接區16之正上方，其中，閘極13靠近該第二導電型汲極17側之部分區域，於該縱向上堆疊且接觸於至少一部分場氧化區18之正上方(在本實施例之圖式中，閘極13靠近該第二導電型汲極17側之部分區域，於該縱向上堆疊且接觸於全部場氧化區18之正上方)。本實施例說明了，根據本發明的教示，本發明之高壓空乏型MOS元件還可結合應用於例如高壓空乏型MOS元件5等高壓空乏型MOS元件中，其中高壓空乏型MOS元件5由於具有場氧化區18，因此能承受較高的電壓。此外，場氧化區18並不限於如圖所示之區域氧化(local oxidation of silicon, LOCOS)結構，亦可為淺溝槽絕緣(shallow trench isolation, STI)結構(未示出)。Please refer to FIG. 5, which shows an embodiment of the high-voltage empty-type MOS element (high-voltage empty-type MOS element 5) of the present invention. The difference is that the high-voltage empty-type MOS element 5 further includes a field oxide region 18 formed on the upper surface 11 ′ and stacked and contacting a portion directly above the second conductive type connection region 16, wherein the gate electrode 13 is close to A part of the region of the second conductivity type drain 17 is stacked in the longitudinal direction and is in contact with at least a portion of the field oxidation region 18 directly above (in the diagram of this embodiment, the gate electrode 13 is close to the second conductivity type drain). Part of the region on the pole 17 side is stacked in this longitudinal direction and contacts directly above the entire field oxidation region 18). This embodiment illustrates that according to the teachings of the present invention, the high-voltage empty-type MOS element of the present invention can also be used in combination with high-voltage empty-type MOS elements such as the high-voltage empty-type MOS element 5, where the high-voltage empty-type MOS element 5 has a field The oxidized region 18 can therefore withstand higher voltages. In addition, the field oxidation region 18 is not limited to a local oxidation of silicon (LOCOS) structure as shown in the figure, but may also be a shallow trench isolation (STI) structure (not shown).

第6A-6I圖顯示根據本發明之具有可調整臨界電壓之高壓空乏型金屬氧化物半導體元件6(包含元件61與62)製造方法的剖視示意圖。首先，如第6A圖所示，提供半導體基板11，其中，半導體基板11例如但不限於為P型矽基板，當然亦可以為其他半導體基板。半導體基板11於一縱向(如圖中之虛線箭號方向)上，具有相對之一上表面11’與一下表面11”。接著，如第6B圖所示，形成第一導電型井區12A與12B，形成於半導體基板11中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’； 形成第一導電型井區12A與12B的方法，例如但不限於以微影製程、離子植入製程、與熱製程形成(未示出)，此為本領域中具有通常知識者所熟知，在此不予贅述。在一實施例中，第一導電型井區12A與12B可互相鄰接，亦即，高壓空乏型MOS元件61與62可形成於同一井區內。6A-6I are schematic cross-sectional views showing a method for manufacturing a high-voltage empty metal-oxide semiconductor element 6 (including elements 61 and 62) having an adjustable threshold voltage according to the present invention. First, as shown in FIG. 6A, a semiconductor substrate 11 is provided. The semiconductor substrate 11 is, for example, but not limited to, a P-type silicon substrate, and of course, it may be another semiconductor substrate. The semiconductor substrate 11 has an upper surface 11 ′ and a lower surface 11 ′ opposite to each other in a longitudinal direction (as indicated by the dotted arrow in the figure). Then, as shown in FIG. 6B, first well-type well regions 12A and 12A are formed. 12B is formed in the semiconductor substrate 11 and is located below the upper surface 11 ′ in the longitudinal direction and contacts the upper surface 11 ′; a method for forming the first conductive well regions 12A and 12B, such as but not limited to The film formation process, the ion implantation process, and the thermal process formation (not shown) are well known to those having ordinary knowledge in the art, and will not be repeated here. In one embodiment, the first conductive well region 12A and 12B may be adjacent to each other, that is, the high-voltage empty-type MOS elements 61 and 62 may be formed in the same well area.

接下來，如第6C圖所示，形成場氧化區18於半導體基板11上，以定義高壓空乏型MOS元件61與62之區域，且在後續製程中所形成之閘極13A與13B、第二導電型源極14A與14B、第二導電型通道區15A與15B、第二導電型連接區16A與16B、第二導電型汲極17A與17B等皆分別形成於如圖所示之高壓空乏型MOS元件3A與3B之區域內。其中，場氧化區18為如圖所示之區域氧化(local oxidation of silicon, LOCOS)結構或淺溝槽絕緣(shallow trench isolation, STI)結構(未示出)。Next, as shown in FIG. 6C, a field oxide region 18 is formed on the semiconductor substrate 11 to define a region of the high-voltage empty type MOS devices 61 and 62, and the gate electrodes 13A and 13B and the second electrode formed in the subsequent processes are formed. The conductive source electrodes 14A and 14B, the second conductive type channel regions 15A and 15B, the second conductive type connection regions 16A and 16B, and the second conductive type drain electrodes 17A and 17B are all formed in the high-voltage empty type as shown in the figure. Within the area of the MOS devices 3A and 3B. The field oxidation region 18 is a local oxidation of silicon (LOCOS) structure or a shallow trench isolation (STI) structure (not shown) as shown in the figure.

接下來，如第6D圖所示，分別形成第二導電型通道區15A與15B於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，其中第二導電型通道區15A與15B分別用以於一非空乏(non-depleted)狀態下使該高壓空乏型MOS元件61與62導通操作，且於一空乏(depleted)狀態下使高壓空乏型MOS元件3A與3B不導通操作。Next, as shown in FIG. 6D, second conductive type channel regions 15A and 15B are formed in the first conductive type well regions 12A and 12B, respectively, and in the longitudinal direction, are located below the upper surface 11 'and contact the same. Upper surface 11 ', wherein the second conductive type channel regions 15A and 15B are used to conduct the high-voltage empty type MOS devices 61 and 62 in a non-depleted state, respectively, and in a depleted state The high-voltage empty-type MOS elements 3A and 3B are turned off.

接下來，如第6E圖所示，形成第二導電型連接區16A與16B於第一導電型井區12A與12B中，且於該縱向上，位於該上表面11’下方並接觸於該上表面11’，且於該橫向上，分別鄰接於第二導電型通道區15A與15B。Next, as shown in FIG. 6E, the second conductive type connection regions 16A and 16B are formed in the first conductive type well regions 12A and 12B, and in the longitudinal direction, are located below the upper surface 11 'and contact the upper surface. The surface 11 'is adjacent to the second conductive type channel regions 15A and 15B in the lateral direction.

接下來，如第6F圖所示，形成閘極13A與13B於該上表面11’上，於該縱向上，該閘極13A與13B堆疊並接觸於該上表面11’上，且分別位於並接觸第二導電型通道區15A與15B各自之至少一部分區域正上方，用以控制該第二導電型通道區15A與15B為該空乏狀態或該非空乏狀態。Next, as shown in FIG. 6F, gates 13A and 13B are formed on the upper surface 11 ′. In the longitudinal direction, the gates 13A and 13B are stacked and contacted on the upper surface 11 ′, and are respectively located at At least a part of each of the regions of contacting the second conductive type channel regions 15A and 15B is directly above to control the second conductive type channel regions 15A and 15B to be the empty state or the non-empty state.

接下來，如第6G圖所示，以介電層138A與138B、閘極導電層137A與137B以及光阻層21作為遮罩，以定義第二導電型輕摻雜擴散區19A與19B的離子植入區，並以離子植入製程步驟，將第二導電型雜質，以加速離子的形式，植入定義的區域內以形成第二導電型輕摻雜擴散區19A與19B，且於該橫向上，分別鄰接於第二導電型通道區15A與15B。Next, as shown in FIG. 6G, the dielectric layers 138A and 138B, the gate conductive layers 137A and 137B, and the photoresist layer 21 are used as masks to define the ions of the second conductivity type lightly doped diffusion regions 19A and 19B. The implanted region is implanted in an ion implantation process step in the form of accelerated ions into the defined area to form second conductive lightly doped diffusion regions 19A and 19B, and in the lateral direction Above, adjacent to the second conductivity type channel regions 15A and 15B, respectively.

接下來，如第6H圖所示，以閘極13A、場氧化區18以及光阻層22作為遮罩，以定義第二導電型源極14A與14B與第二導電型汲極17A與17B的離子植入區，並以離子植入製程步驟，將第二導電型雜質，以加速離子的形式，植入定義的區域內以形成第二導電型源極14A與14B與第二導電型汲極17A與17B。其中，於該橫向上，第二導電型源極14A與14B分別鄰接於第二導電型輕摻雜擴散區19A與19B，而第二導電型汲極17A與17B則分別鄰接於第二導電型連接區16A與16B；且其中第二導電型汲極17A與17B不與閘極13A與13B相鄰接，使得高壓空乏型MOS元件61與62可操作於較高之電壓。Next, as shown in FIG. 6H, the gate electrode 13A, the field oxide region 18, and the photoresist layer 22 are used as a mask to define the second conductive type source electrodes 14A and 14B and the second conductive type drain electrodes 17A and 17B. In the ion implantation region, the second conductivity type impurities are implanted into the defined area in the form of accelerated ions in the form of ion implantation process steps to form the second conductivity type source electrodes 14A and 14B and the second conductivity type drain electrode. 17A and 17B. In this lateral direction, the second conductivity type sources 14A and 14B are adjacent to the second conductivity type lightly doped diffusion regions 19A and 19B, respectively, and the second conductivity type drain electrodes 17A and 17B are respectively adjacent to the second conductivity type. The connection regions 16A and 16B; and the second conductive type drain electrodes 17A and 17B are not adjacent to the gate electrodes 13A and 13B, so that the high-voltage empty-type MOS elements 61 and 62 can be operated at a higher voltage.

此外值得注意的是，在本實施例中，閘極13A之第二導電型閘極雜質摻雜亦在本步驟中形成。當然，閘極13A之第二導電型閘極雜質摻雜，亦可與第二導電型源極14A與14B與第二導電型汲極17A與17B之形成步驟分開，而以不同於第二導電型源極14A與14B與第二導電型汲極17A與17B之第二導電型雜質之濃度或其他參數而形成之。It is also worth noting that, in this embodiment, the second conductive gate impurity doping of the gate electrode 13A is also formed in this step. Of course, the second conductivity type gate impurity doping of the gate electrode 13A may be separated from the formation steps of the second conductivity type sources 14A and 14B and the second conductivity type drain electrodes 17A and 17B, and is different from the second conductivity type. The source electrodes 14A and 14B and the second conductivity type drain electrodes 17A and 17B are formed by the concentration of the second conductivity type impurities or other parameters.

需說明的是，在一實施例中， 第二導電型通道區15A與15B可以光罩定義第二導電型雜質離子植入區域，使得第二導電型通道區15A與15B分別鄰接於第二導電型輕摻雜擴散區19A與19B以及第二導電型連接區16A與16B，但未鄰接於第二導電型源極14A與14B與第二導電型汲極17A與17B，以使本發明之高壓空乏型MOS元件可操作於較高之電壓下。而在一實施例中，第二導電型通道區15A與15B則不需以光罩定義第二導電型雜質離子植入區域，以節省成本，在此情況下，部分之第二導電型通道區15A與15B可能會重疊於部分之第二導電型輕摻雜擴散區19A與19B、第二導電型連接區16A與16B、第二導電型源極14A與14B、以及第二導電型汲極17A與17B。It should be noted that, in an embodiment, the second conductive type channel regions 15A and 15B may define a second conductive type impurity ion implantation region with a photomask, so that the second conductive type channel regions 15A and 15B are adjacent to the second conductive type, respectively. Type lightly doped diffusion regions 19A and 19B and second conductivity type connection regions 16A and 16B, but not adjacent to the second conductivity type sources 14A and 14B and the second conductivity type drain electrodes 17A and 17B, so that the high voltage of the present invention The empty MOS device can operate at higher voltages. In one embodiment, the second conductive type channel regions 15A and 15B do not need to define a second conductive type impurity ion implantation region with a photomask to save costs. In this case, some of the second conductive type channel regions 15A and 15B may overlap part of the second conductivity type lightly doped diffusion regions 19A and 19B, the second conductivity type connection regions 16A and 16B, the second conductivity type sources 14A and 14B, and the second conductivity type drain 17A With 17B.

接下來，如第6I圖所示，以光阻層23作為遮罩，以定義形成閘極13B之第一導電型閘極雜質摻雜區域，並以離子植入製程步驟，將第一導電型雜質，以加速離子的形式，植入定義的區域內以使閘極13B具有第一導電型之閘極雜質摻雜。在一較佳實施例中，第一導電型雜質摻雜至閘極13B之步驟可與半導體基板11中之一電晶體元件(例如一第一導電型MOS元件，未示出)之一第一導電型源極或一第一導電型汲極(未示出)之形成步驟同時進行，因此本發明可在不增加光罩數目以及製程步驟的情況下，仍可提供具有複數種臨界電壓之同導電型之高壓空乏型MOS元件，可大幅增加高壓電路設計之彈性且不增加成本。當然，閘極13B之第一導電型雜質摻雜亦可與第一導電型MOS元件之第一導電型源極與汲極之形成步驟分開，而以不同於第一導電型MOS元件之源極與汲極之第一導電型雜質之濃度或其他參數而形成之。Next, as shown in FIG. 6I, the photoresist layer 23 is used as a mask to define a first conductive type gate impurity doped region forming the gate 13B, and the first conductive type is formed by an ion implantation process step. The impurities, in the form of accelerated ions, are implanted in a defined area so that the gate 13B has a gate impurity doping of a first conductivity type. In a preferred embodiment, the step of doping the first conductivity type impurity to the gate electrode 13B may be the same as one of the transistor elements (eg, a first conductivity type MOS element, not shown) in the semiconductor substrate 11. The formation steps of the conductive source or a first conductive drain (not shown) are performed simultaneously. Therefore, the present invention can still provide a plurality of threshold voltages without increasing the number of photomasks and process steps. Conductive high-voltage empty-type MOS devices can greatly increase the flexibility of high-voltage circuit design without increasing costs. Of course, the first conductive type impurity doping of the gate electrode 13B can also be separated from the formation steps of the first conductive type source and the drain of the first conductive type MOS device, and different from the source of the first conductive type MOS device. It is formed by the concentration of the first conductivity type impurity with the drain electrode or other parameters.

以上已針對較佳實施例來說明本發明，唯以上所述者，僅係為使熟悉本技術者易於了解本發明的內容而已，並非用來限定本發明之權利範圍。所說明之各個實施例，並不限於單獨應用，亦可以組合應用；舉其中一例，具有「第一導電型閘極雜質摻雜」、「第二導電型閘極雜質摻雜」、與同時具有「第一與第二導電型閘極雜質摻雜」之高壓空乏型MOS元件，其中之二者或以上可以並用，而使得本發明之高壓空乏型MOS元件具有多種臨界電壓高壓空乏型MOS元件之組合。此外，在本發明之相同精神下，熟悉本技術者可以思及各種等效變化以及各種組合，例如，本發明亦可應用於其他型式之高壓或非高壓MOS元件中。由此可知，在本發明之相同精神下，熟悉本技術者可以思及各種等效變化以及各種組合，其組合方式甚多，在此不一一列舉說明。因此，本發明的範圍應涵蓋上述及其他所有等效變化。The present invention has been described above with reference to the preferred embodiments, but the above is only for making those skilled in the art easily understand the content of the present invention, and is not intended to limit the scope of rights of the present invention. The various embodiments described are not limited to being used alone, but can also be used in combination; for example, there are “first conductive gate impurity doping”, “second conductive gate impurity doping”, and The "high-voltage empty-type MOS device doped with the first and second conductive gate impurities", two or more of which can be used in combination, so that the high-voltage empty-type MOS device of the present invention has a variety of threshold voltages. combination. In addition, under the same spirit of the present invention, those skilled in the art can consider various equivalent changes and various combinations. For example, the present invention can also be applied to other types of high-voltage or non-high-voltage MOS devices. It can be seen that, under the same spirit of the present invention, those skilled in the art can think of various equivalent changes and various combinations, and there are many combinations, which are not listed here. Therefore, the scope of the invention should cover the above and all other equivalent variations.

1, 1A, 1B, 2, 2A, 2B‧‧‧金屬氧化物半導體元件1, 1A, 1B, 2, 2A, 2B‧‧‧ metal oxide semiconductor devices

3, 3A, 3B 4, 5, 6, 61, 62‧‧‧金屬氧化物半導體元件3, 3A, 3B 4, 5, 6, 61, 62‧‧‧ metal oxide semiconductor devices

11‧‧‧半導體基板11‧‧‧ semiconductor substrate

11’‧‧‧上表面11’‧‧‧ top surface

11”‧‧‧下表面11 ”‧‧‧ lower surface

12, 12A, 12B‧‧‧第一導電型井區12, 12A, 12B‧‧‧The first conductive well area

13, 13A, 13B‧‧‧閘極13, 13A, 13B‧‧‧Gate

14, 14A, 14B‧‧‧第二導電型源極14, 14A, 14B‧‧‧Second Conductive Source

15, 15A, 15B‧‧‧第二導電型通道區15, 15A, 15B‧‧‧Second conductivity type channel area

16, 16A, 16B‧‧‧第二導電型連接區16, 16A, 16B‧‧‧Second conductive connection area

17, 17A, 17B‧‧‧第二導電型汲極17, 17A, 17B‧‧‧Second Conductive Drain

18‧‧‧場氧化區18‧‧‧field oxidation zone

19, 19A, 19B‧‧‧第二導電型輕摻雜擴散區19, 19A, 19B‧‧‧Second conductivity type lightly doped diffusion region

135, 135A, 135B‧‧‧閘極間隔層135, 135A, 135B‧‧‧Gate spacer

136, 136A, 136B‧‧‧閘極間隔層136, 136A, 136B‧‧‧Gate spacer

137, 137A, 137B‧‧‧閘極導電層137, 137A, 137B‧‧‧Gate conductive layer

138, 138A, 138B‧‧‧介電層138, 138A, 138B‧‧‧Dielectric layer

21, 22, 23‧‧‧光阻層21, 22, 23‧‧‧ photoresist layer

第1圖顯示一種先前技術之金屬氧化物半導體元件之剖面示意圖。 第2圖顯示一種先前技術之金屬氧化物半導體元件之剖面示意圖。 第3圖顯示本發明之具有可調整臨界電壓高壓空乏型金屬氧化物半導體元件之一實施例之剖面示意圖。 第4圖顯示本發明之具有可調整臨界電壓高壓空乏型金屬氧化物半導體元件之一實施例之剖面示意圖。 第5圖顯示本發明之具有可調整臨界電壓高壓空乏型金屬氧化物半導體元件之一實施例之剖面示意圖。 第6A-6I圖顯示本發明之具有可調整臨界電壓高壓空乏型金屬氧化物半導體元件製造方法之一實施例之剖面示意圖。FIG. 1 is a schematic cross-sectional view of a prior art metal oxide semiconductor device. FIG. 2 is a schematic cross-sectional view of a prior art metal oxide semiconductor device. FIG. 3 is a schematic cross-sectional view of an embodiment of the high-voltage empty-type metal oxide semiconductor device with adjustable threshold voltage according to the present invention. FIG. 4 is a schematic cross-sectional view of an embodiment of the high-voltage empty metal-oxide semiconductor device with adjustable threshold voltage according to the present invention. FIG. 5 is a schematic cross-sectional view of an embodiment of the high-voltage empty-type metal oxide semiconductor device with adjustable threshold voltage according to the present invention. 6A-6I are schematic cross-sectional views illustrating an embodiment of a method for manufacturing a high-voltage empty-type metal oxide semiconductor device with adjustable threshold voltage according to the present invention.

無no

Claims (7)

一種具有可調整臨界電壓之高壓空乏型金屬氧化物半導體 (Metal Oxide Semiconductor, MOS)元件形成於一半導體基板，其中該半導體基板，於一縱向上，具有相對之一上表面與一下表面，該高壓空乏型MOS元件包含： 一第一導電型井區，形成於該半導體基板中，且於該縱向上，位於該上表面下方並接觸於該上表面； 一第二導電型通道區，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，其中當該第二導電型通道區於一非空乏狀態下，該高壓空乏型MOS元件導通操作，且於一空乏狀態下，該高壓空乏型MOS元件不導通操作； 一第二導電型連接區，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型通道區； 一第一導電型閘極，形成於該上表面上，於該縱向上，該第一導電型閘極堆疊並接觸於該上表面上，且位於並接觸該第二導電型通道區之至少一部分區域正上方，用以控制該第二導電型通道區為該空乏狀態或該非空乏狀態； 一第二導電型輕摻雜擴散區，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，並位於該第一導電型閘極之一間隔層正下方，且於該橫向上，鄰接於該第二導電型通道區； 一第二導電型源極，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型輕摻雜擴散區；以及 一第二導電型汲極，形成於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型連接區，且不與該第一導電型閘極相鄰接；其中該第二導電型連接區之雜質摻雜濃度低於該第二導電型汲極之雜質摻雜濃度； 其中該第一導電型閘極具有第一導電型或/及第二導電型之雜質摻雜，且該第一導電型閘極之一淨摻雜濃度根據一目標臨界電壓而決定。A high-voltage empty metal oxide semiconductor (MOS) element with an adjustable threshold voltage is formed on a semiconductor substrate, wherein the semiconductor substrate has an upper surface and a lower surface opposite to each other in a longitudinal direction, and the high voltage The empty type MOS device includes: a first conductive type well region formed in the semiconductor substrate, and located in the longitudinal direction below the upper surface and contacting the upper surface; a second conductive type channel region formed in the semiconductor substrate; The first conductive type well region is located below the upper surface and contacts the upper surface in the longitudinal direction, and when the second conductive type channel region is in a non-empty state, the high-voltage empty-type MOS device is turned on. And in a depleted state, the high-voltage depletion-type MOS device does not conduct conduction operation; a second-conductivity-type connection region is formed in the first-conductivity-type well region, and in the longitudinal direction, is located below the upper surface and contacts On the upper surface and in the lateral direction, adjacent to the second conductive type channel region; a first conductive type gate electrode is formed on the upper surface, and in the longitudinal direction, the The first conductive type gate is stacked and contacted on the upper surface, and is located directly above and in contact with at least a part of the second conductive type channel region, for controlling the second conductive type channel region to be empty or non-empty. State; a second conductivity type lightly doped diffusion region is formed in the first conductivity type well region and is located below the upper surface in contact with the upper surface in the longitudinal direction and is located in the first conductivity type gate A spacer layer is directly below and adjacent to the second conductivity type channel region in the lateral direction; a second conductivity type source electrode is formed in the first conductivity type well region and is located in the longitudinal direction at The upper surface is below and in contact with the upper surface, and in the lateral direction, is adjacent to the second conductive type lightly doped diffusion region; and a second conductive type drain electrode is formed in the first conductive type well region, And in the longitudinal direction, located below the upper surface and in contact with the upper surface, and in the transverse direction, adjacent to the second conductive type connection region and not adjacent to the first conductive type gate; wherein the Impurity doping of the second conductive type connection region An impurity doping concentration lower than the second conductivity type drain; wherein the first conductivity type gate has impurity impurities of the first conductivity type and / or the second conductivity type and one of the first conductivity type gates The net doping concentration is determined based on a target threshold voltage. 如申請專利範圍第1項之高壓空乏型MOS元件，其中該基板更具有一高壓MOS元件，與該高壓空乏型MOS元件，利用對應相同的製程步驟，形成一第一導電型井區、一第二導電型源極、以及一第二導電型汲極，且該高壓MOS元件具有一第二導電型閘極。For example, the high-voltage empty-type MOS device in the first patent application scope, wherein the substrate further has a high-voltage empty MOS device, and the high-voltage empty MOS device corresponds to the same process steps to form a first conductive well region, a first A two-conductivity source and a second-conductivity drain, and the high-voltage MOS device has a second-conductivity gate. 如申請專利範圍第1項之高壓空乏型MOS元件，更包含一場氧化區，形成於該上表面上，且堆疊並接觸於部分該第二導電型連接區之正上方，其中該第一導電型閘極靠近該第二導電型汲極側之部分區域，於該縱向上堆疊且接觸於至少一部分該場氧化區之正上方。For example, the high-voltage empty-type MOS device in the scope of patent application No. 1 further includes a field oxide region formed on the upper surface and stacked and contacting a portion of the second conductive type connection region directly above the first conductive type. A portion of the gate near the drain side of the second conductivity type is stacked in the longitudinal direction and contacts at least a portion directly above the field oxidation region. 一種具有可調整臨界電壓之高壓空乏型金屬氧化物半導體 (Metal Oxide Semiconductor, MOS)元件製造方法，包含以下步驟： 提供一半導體基板，且於一縱向上，具有相對之一上表面與一下表面； 形成一第一導電型井區於該半導體基板中，且於該縱向上，位於該上表面下方並接觸於該上表面； 形成一第二導電型通道區於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，其中當該第二導電型通道區於一非空乏狀態下，該高壓空乏型MOS元件導通操作，且於一空乏狀態下，該高壓空乏型MOS元件不導通操作； 形成一第二導電型連接區於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型通道區； 形成一第一導電型閘極於該上表面上，且於該縱向上，該第一導電型閘極堆疊並接觸於該上表面上，且位於並接觸該第二導電型通道區之至少一部分區域正上方，用以控制該第二導電型通道區為該空乏狀態或該非空乏狀態； 形成一第二導電型輕摻雜擴散區於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，並位於該第一導電型閘極之一間隔層正下方，且於該橫向上，鄰接於該第二導電型通道區； 形成一第二導電型源極於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型輕摻雜擴散區；以及 形成一第二導電型汲極於該第一導電型井區中，且於該縱向上，位於該上表面下方並接觸於該上表面，且於該橫向上，鄰接於該第二導電型連接區，且不與該第一導電型閘極相鄰接；其中該第二導電型連接區之雜質摻雜濃度低於該第二導電型汲極之雜質摻雜濃度； 其中該閘極具有第一導電型或/及第二導電型之雜質摻雜，且該閘極之一淨摻雜濃度根據一目標臨界電壓而決定。A method for manufacturing a high-voltage empty-type metal oxide semiconductor (MOS) device with an adjustable threshold voltage includes the following steps: providing a semiconductor substrate and having an opposite upper surface and a lower surface in a longitudinal direction; Forming a first conductivity type well region in the semiconductor substrate, and located in the longitudinal direction below the upper surface and contacting the upper surface; forming a second conductivity type channel region in the first conductivity type well region, And in the longitudinal direction, is located below the upper surface and contacts the upper surface, wherein when the second conductive type channel region is in a non-empty state, the high-voltage empty-type MOS element is turned on and in an empty state, The high-voltage empty-type MOS device does not conduct conduction operation; a second conductive type connection region is formed in the first conductive type well region, and is located below the upper surface and contacts the upper surface in the longitudinal direction, and in the lateral direction Adjacent to the second conductive type channel region; forming a first conductive type gate electrode on the upper surface, and in the longitudinal direction, the first conductive type gate electrode is stacked and connected On the upper surface and directly above and in contact with at least a part of the second conductive type channel region, for controlling the second conductive type channel region to be empty or non-empty; forming a second conductive light The doped diffusion region is in the first conductive type well region, and in the longitudinal direction, is located below the upper surface and contacts the upper surface, and is located directly under a spacer layer of the first conductive type gate, and In the lateral direction, adjacent to the second conductivity type channel region; forming a second conductivity type source electrode in the first conductivity type well region, and in the longitudinal direction, located below the upper surface and contacting the upper surface, And in the lateral direction, adjacent to the second conductivity type lightly doped diffusion region; and forming a second conductivity type drain electrode in the first conductivity type well region, and in the longitudinal direction, located below the upper surface and In contact with the upper surface, and in the lateral direction, adjacent to the second conductive type connection region and not adjacent to the first conductive type gate; wherein the impurity concentration of the second conductive type connection region is low Impurities doped in the second conductivity type drain Impurity concentration; wherein the gate has impurity doping of the first conductivity type and / or the second conductivity type, and a net doping concentration of one of the gates is determined according to a target threshold voltage. 如申請專利範圍第4項之高壓空乏型MOS元件製造方法，其中該基板更具有一高壓MOS元件，與該高壓空乏型MOS元件，利用對應相同的製程步驟，形成一第一導電型井區、一第二導電型源極、以及一第二導電型汲極，且該高壓MOS元件具有一第二導電型閘極。For example, the method for manufacturing a high-voltage empty-type MOS device according to item 4 of the patent application, wherein the substrate further has a high-voltage MOS device, and the high-voltage empty-type MOS device corresponds to the same process steps to form a first conductive well region, A second conductivity type source and a second conductivity type drain, and the high-voltage MOS device has a second conductivity type gate. 如申請專利範圍第4項之高壓空乏型MOS元件製造方法，其中該第一導電型閘極利用與該半導體基板中之一電晶體元件之一第一導電型源極或一第一導電型汲極相同之一微影步驟(lithography step)以及相同之一離子植入步驟形成。For example, the method for manufacturing a high-voltage empty-type MOS device according to item 4 of the patent application, wherein the first conductive gate uses a first conductive source or a first conductive drain connected to a transistor element in the semiconductor substrate. An identical lithography step and an identical ion implantation step are formed. 如申請專利範圍第4項之高壓空乏型MOS元件製造方法，更包含: 形成一場氧化區於該上表面上，且堆疊並接觸於部分該第二導電型連接區之正上方，其中該第一導電型閘極靠近該第二導電型汲極側之部分區域，於該縱向上堆疊且接觸於至少一部分該場氧化區之正上方。For example, the method for manufacturing a high-voltage empty-type MOS device according to item 4 of the application, further includes: forming a field oxide region on the upper surface, and stacking and contacting a portion directly above the second conductive type connection region, wherein the first A portion of the conductive gate close to the drain side of the second conductive type is stacked in the longitudinal direction and contacts at least a portion of the field oxide region directly above.
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