TW201836748A - Laser machining device and laser machining method - Google Patents

Laser machining device and laser machining method Download PDF

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TW201836748A
TW201836748A TW106144149A TW106144149A TW201836748A TW 201836748 A TW201836748 A TW 201836748A TW 106144149 A TW106144149 A TW 106144149A TW 106144149 A TW106144149 A TW 106144149A TW 201836748 A TW201836748 A TW 201836748A
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light
reflected light
branched
laser
measurement
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TWI745509B (en
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牟禮勝仁
嶋田誠
福岡大岳
土本秀和
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日商斯米特克股份有限公司
日商住友大阪水泥股份有限公司
日商濱松赫德尼古斯股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046Automatically focusing the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
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Abstract

A laser machining device, provided with: a measurement light source; a condensing lens; a displacement detector for detecting the displacement of a laser beam incidence surface on the basis of reflected light of measurement light reflected by the laser beam incidence surface; and an imaging state adjustment unit for moving the imaging state of the measurement light and/or the reflected light of the measurement light. The displacement detector has: a branching unit for branching the reflected light of the measurement light into a plurality of branched reflected lights; a plurality of astigmatism imparting units for imparting astigmatism amounts of different sizes to each of the plurality of branched reflected lights; a plurality of beam shape detectors for detecting the respective beam shapes of each of the branched reflected lights to which astigmatism has been imparted; and a signal acquisition unit for selecting, from the light paths of the plurality of branched reflected lights, a light path corresponding to the imaging state to be adjusted by the imaging state adjustment unit, and acquiring a signal relating to displacement on the basis of the result of detection by the beam shape detector on the light path of the selected branched reflected light.

Description

雷射加工裝置及雷射加工方法Laser processing device and laser processing method

本發明之一態樣係關於雷射加工裝置及雷射加工方法。One aspect of the present invention relates to a laser processing device and a laser processing method.

以往已知一種藉由將加工用雷射光聚光在加工對象物,在加工對象物形成改質區域的雷射加工裝置(參照例如專利文獻1)。如上所示之雷射加工裝置係具備有:將測定用光出射的測定用光源;將加工用雷射光及測定用光聚光在加工對象物的聚光用透鏡;及根據在加工對象物的雷射光入射面被反射的測定用光的反射光,檢測雷射光入射面的位移(以下亦僅稱之為「位移」)的位移檢測部。位移檢測部係在測定用光的反射光附加像散(astigmatism),檢測附加有像散的反射光的射束形狀,根據該檢測結果,取得有關位移的訊號。 [先前技術文獻] [專利文獻]Conventionally, there has been known a laser processing device that focuses a laser beam for processing on a processing object to form a modified region in the processing object (see, for example, Patent Document 1). The laser processing device as described above includes a measurement light source that emits the measurement light, a lens for condensing the processing laser light and the measurement light on the processing object, and a lens according to the processing object. The reflected light of the measurement light reflected by the laser light incident surface is a displacement detecting unit that detects a displacement of the laser light incident surface (hereinafter, also referred to simply as "displacement"). The displacement detection unit adds astigmatism to the reflected light of the measurement light, detects the beam shape of the reflected light to which astigmatism is added, and obtains a signal related to the displacement based on the detection result. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本特開2015-186825號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-186825

(發明所欲解決之課題)(Problems to be solved by the invention)

在如上所述之雷射加工裝置中,有所取得之對於位移的訊號的變動(訊號的傾斜)過於平緩的情形。此時,例如若雷射光入射面為研削面,因該研削痕(亦被稱為鋸痕(saw mark)),測定用光散射,由於產生即使為相同位移,訊號亦不同的現象,因此所檢測的位移的誤差較為明顯。結果,有難以精度佳地檢測雷射光入射面的位移之虞。In the laser processing apparatus as described above, the variation of the signal (inclination of the signal) with respect to the displacement may be too gentle. At this time, for example, if the incident surface of the laser light is a grinding surface, the light used for measurement is scattered by the grinding mark (also referred to as a saw mark). Therefore, even if the same displacement occurs, the signal is different. The error of the detected displacement is more obvious. As a result, it may be difficult to detect the displacement of the laser light incident surface with high accuracy.

本發明之一態樣之目的在提供可精度佳地檢測雷射光入射面的位移的雷射加工裝置及雷射加工方法。 (解決課題之手段)An object of one aspect of the present invention is to provide a laser processing device and a laser processing method that can accurately detect a displacement of a laser light incident surface. (Means for solving problems)

本發明之一態樣之雷射加工裝置係藉由將加工用雷射光聚光在加工對象物,在加工對象物形成改質區域的雷射加工裝置,其係具備有:測定用光源,其係出射測定用光;聚光用透鏡,其係將加工用雷射光及測定用光聚光在加工對象物;位移檢測部,其係根據在加工對象物的雷射光入射面被反射的測定用光的反射光,檢測雷射光入射面的位移;及成像狀態調整部,其係將測定用光及測定用光的反射光的至少任一者的成像狀態進行移動,位移檢測部係具有:分歧部,其係將測定用光的反射光分歧成複數分歧反射光;複數像散附加部,其係設在複數分歧反射光的光路各個,對複數分歧反射光各個,附加互相不同的大小的像散量;複數射束形狀檢測部,其係被設在複數分歧反射光的光路各個,檢測附加有像散的複數分歧反射光各個的射束形狀;及訊號取得部,其係由複數分歧反射光的光路之中,選擇對應在成像狀態調整部進行調整的成像狀態的一個,根據所選擇出的分歧反射光的光路中的射束形狀檢測部的檢測結果,取得關於位移的訊號。A laser processing apparatus according to an aspect of the present invention is a laser processing apparatus that focuses a processing laser beam on a processing object and forms a modified region on the processing object. The laser processing apparatus includes a measurement light source, It is used for measuring light; a lens for condensing is used for condensing laser light for processing and measuring light on the object to be processed; and a displacement detecting unit for measuring is reflected based on the laser light incident surface of the object to be processed. The reflected light of the light detects the displacement of the incident surface of the laser light; and the imaging state adjustment unit moves the imaging state of at least one of the measurement light and the reflected light of the measurement light, and the displacement detection unit has: divergence The multiple astigmatism adding unit is provided on each of the optical paths of the complex divergent reflected light, and each of the complex divergent reflected light is attached with images of different sizes from each other. Diffuse amount; a complex beam shape detection unit, which is provided in each of the optical paths of the plural branched reflected light, and detects the beam shape of each of the plural branched reflected light to which astigmatism is added; and signal acquisition , Which is selected from the optical paths of the plurality of branched reflected light, one corresponding to the imaging state adjusted by the imaging state adjustment section, and obtained according to the detection result of the beam shape detection section in the selected optical path of the branched reflected light. Signal about displacement.

本發明人等不斷精心研究,發現所取得的訊號的傾斜係與測定用光及測定用光的反射光的至少任一者的成像狀態具相關。此外,以訊號的傾斜過於平緩的要因而言,發現因該成像狀態與反射光所附加的像散量的失配而起。因此,在本發明之一態樣之雷射加工裝置中,將測定用光的反射光分歧成複數分歧反射光,檢測在各分歧反射光的光路附加有彼此不同的大小的像散量的分歧反射光的射束形狀。接著,由複數分歧反射光的光路之中,選擇對應在成像狀態調整部進行移動的成像狀態的一個,取得根據所選擇出的該光路的分歧反射光的射束形狀的訊號。藉此,可將有關所取得的訊號的分歧反射光所附加的像散量,形成為對應成像狀態者。可抑制所取得的訊號的傾斜變得過於平緩。因此,可精度佳地檢測雷射光入射面的位移。The present inventors have conducted intensive studies and found that the tilt of the obtained signal is related to the imaging state of at least one of the measurement light and the reflected light of the measurement light. In addition, for the reason that the tilt of the signal is too gentle, it is found that the imaging state arises from the mismatch of the astigmatism amount added by the reflected light. Therefore, in the laser processing apparatus according to an aspect of the present invention, the reflected light of the measurement light is divided into a plurality of branched reflected light, and a difference in the amount of astigmatism of a different magnitude is added to the optical path of each of the branched reflected light. The beam shape of the reflected light. Next, from among the optical paths of the plurality of branched reflected light, one of the imaging states corresponding to the movement of the imaging state adjustment section is selected, and a signal based on the beam shape of the branched reflected light of the selected optical path is obtained. Thereby, the amount of astigmatism added by the divergent reflected light about the obtained signal can be formed to correspond to the imaging state. It is possible to suppress the tilt of the obtained signal from becoming too gentle. Therefore, the displacement of the incident surface of the laser light can be detected with high accuracy.

在本發明之一態樣之雷射加工裝置中,亦可成像狀態調整部係藉由移動成像狀態來調整偏移量,訊號取得部係由複數分歧反射光的光路之中,選擇對應在成像狀態調整部進行調整的偏移量的一個。在此,偏移量係指表示當相對於加工對象物的雷射入射面的位移的訊號成為基準值(典型為零)時之加工對象物的雷射入射面的相對位移的尺度。例如偏移量為0μm係指當與測定用光為相同波長的平行光入射至聚光用透鏡時,成為在加工對象物的雷射入射面縮至最小的配置,相對於此時的位移訊號的訊號成為基準值的幾何學上的配置狀態。此外,例如偏移量為-180μm,係指由偏移量為0μm時的上述配置,加工對象物的雷射入射面朝聚光用透鏡接近180μm時,訊號成為基準值的幾何學上的配置狀態。偏移量的值小(負幅度大)時,稱偏移或偏移量為深,偏移量的值大(負幅度小)時,稱偏移或偏移量為淺。In the laser processing device according to one aspect of the present invention, the imaging state adjustment unit may adjust the offset by moving the imaging state, and the signal acquisition unit selects the imaging path corresponding to the plurality of divergent reflected light paths. The state adjustment unit performs one of the offsets. Here, the offset refers to a dimension indicating the relative displacement of the laser incident surface of the processing object when the signal of the displacement from the laser incident surface of the processing object becomes a reference value (typically zero). For example, an offset of 0 μm means that when parallel light having the same wavelength as the measurement light is incident on the condenser lens, it becomes a configuration that minimizes the laser incident surface of the object to be processed. The signal becomes the geometric configuration state of the reference value. In addition, for example, the offset is -180 μm, which refers to the geometrical configuration in which the signal becomes a reference value when the laser incident surface of the object to be processed approaches 180 μm from the above-mentioned configuration when the offset is 0 μm. status. When the value of the offset is small (the negative amplitude is large), the offset or offset is called deep, and when the value of the offset is large (the negative amplitude is small), the offset or offset is called shallow.

發現所取得的訊號的傾斜,具體而言,與偏移量具相關,因偏移量與像散量的失配(mismatch)而起而過於平緩的知見。因此,在本發明之一態樣之雷射加工裝置中,由複數分歧反射光的光路之中選擇對應偏移的一個。藉此,可將有關所取得的訊號的分歧反射光所附加的像散量形成為對應偏移量者。可抑制所取得的訊號的傾斜過於平緩。It is found that the tilt of the obtained signal is, in particular, related to the offset tool, and the perception is too gentle due to the mismatch between the offset amount and the astigmatism amount. Therefore, in the laser processing apparatus according to an aspect of the present invention, one corresponding to the offset is selected from among the optical paths of the plural branched reflected light. Thereby, the astigmatism amount added by the divergent reflected light about the obtained signal can be formed as a corresponding offset amount. This prevents the acquired signal from tilting too gently.

在本發明之一態樣之雷射加工裝置中,亦可分歧部係將測定用光的反射光至少分歧成第1分歧反射光及第2分歧反射光,像散附加部係具有:第1像散附加部,其係被設在第1分歧反射光的光路,將第1像散量附加在第1分歧反射光;及第2像散附加部,其係被設在第2分歧反射光的光路,將大於第1像散量的第2像散量附加在第2分歧反射光,訊號取得部係:若在成像狀態調整部進行調整的偏移量位於第1範圍,選擇第1分歧反射光的光路,若在成像狀態調整部進行調整的偏移量位於比前述第1範圍為更深的第2範圍,則選擇第2分歧反射光的光路。In the laser processing apparatus according to an aspect of the present invention, the branching unit may branch the reflected light of the measurement light into at least a first branched reflected light and a second branched reflected light. The astigmatism adding unit includes: An astigmatism adding section is provided on the optical path of the first branched reflected light, and a first astigmatism amount is added to the first branched reflected light; and a second astigmatism addition section is provided on the second branched reflected light. In the optical path, a second astigmatism amount greater than the first astigmatism amount is added to the second branched reflected light. The signal acquisition unit: if the offset adjusted by the imaging state adjustment unit is in the first range, select the first branch If the offset of the optical path of the reflected light is in the second range which is deeper than the first range, the optical path of the second branched reflected light is selected.

更具體而言,發現所取得的訊號的傾斜若附加有相同像散量時,偏移愈深,愈過於平緩的知見。因此,在本發明之一態樣之雷射加工裝置中,若偏移量在第1範圍,選擇第1分歧反射光的光路,且若在成像狀態調整部進行調整的偏移量位於比第1範圍為更深的第2範圍時,選擇第2分歧反射光的光路。藉此,可將有關所取得的訊號的分歧反射光所附加的像散量,若偏移深,即加大(若淺則減小)。可抑制所取得的訊號的傾斜過於平緩。More specifically, it is found that if the same signal astigmatism is added to the tilt of the obtained signal, the deeper the shift, the more gradual the perception. Therefore, in the laser processing apparatus according to an aspect of the present invention, if the offset is in the first range, the optical path of the first branched reflected light is selected, and if the offset adjusted by the imaging state adjustment section is located in When the 1 range is a deeper second range, the optical path of the second branched reflected light is selected. As a result, the astigmatism added to the divergent reflected light of the obtained signal can be increased (if it is shallow, it is reduced). This prevents the acquired signal from tilting too gently.

本發明之一態樣之雷射加工裝置亦可具備有:偏移量設定部,其係設定在成像狀態調整部進行調整的偏移量;及成像狀態控制部,其係以成為在偏移量設定部所設定的偏移量的方式,控制成像狀態調整部。藉由該構成,可以成為所設定的偏移量的方式,自動調整成像狀態。The laser processing apparatus according to an aspect of the present invention may further include: an offset setting unit configured to set an offset adjusted by the imaging state adjustment unit; and an imaging state control unit configured to be at the offset The method of the offset amount set by the amount setting section controls the imaging state adjustment section. With this configuration, it is possible to automatically adjust the imaging state as a set offset.

本發明之一態樣之雷射加工裝置亦可具備有:驅動機構,其係沿著聚光用透鏡的光軸方向,使加工對象物及聚光用透鏡的至少任一者進行動作;及驅動機構控制部,其係以在訊號取得部所取得的訊號維持目標值的方式使驅動機構進行動作。藉由該構成,可以追隨雷射光入射面的方式,使聚光用透鏡沿著該光軸方向作相對移動。The laser processing apparatus according to an aspect of the present invention may further include a driving mechanism that operates at least one of a processing object and a focusing lens along the optical axis direction of the focusing lens; and The drive mechanism control unit operates the drive mechanism such that the signal obtained by the signal acquisition unit maintains the target value. With this configuration, the focusing lens can be relatively moved along the optical axis direction so as to follow the laser light incident surface.

本發明之一態樣之雷射加工裝置亦可具備有:光軸調整機構,其係將測定用光的光軸對合在加工用雷射光的光軸。藉由該構成,可精度佳地將測定用光的光軸對合在加工用雷射光的光軸。The laser processing apparatus according to an aspect of the present invention may further include an optical axis adjustment mechanism configured to align the optical axis of the measurement light with the optical axis of the laser light for processing. With this configuration, the optical axis of the measurement light can be aligned with the optical axis of the laser light for processing with high accuracy.

在本發明之一態樣之雷射加工裝置中,亦可測定用光源係可出射具有彼此不同的波長的複數光的任一者,出射複數波長的光之中具有對加工對象物的反射率為最高的波長的光,作為測定用光。此時,可輕易檢測將在雷射光入射面反射測定用光的反射光。In the laser processing apparatus according to an aspect of the present invention, the light source system for measurement can emit any one of a plurality of light having different wavelengths, and the light having a plurality of wavelengths has a reflectance to a processing object The light having the highest wavelength is used as the measurement light. In this case, it is possible to easily detect the reflected light that reflects the measurement light on the laser light incident surface.

本發明之一態樣之雷射加工方法係藉由將加工用雷射光聚光在加工對象物,在加工對象物形成改質區域的雷射加工方法,其具備有:雷射加工步驟,其係一邊將加工用雷射光以聚光用透鏡聚光在加工對象物,一邊將測定用光以聚光用透鏡聚光在加工對象物,將在加工對象物的雷射光入射面被反射的該測定用光的反射光,至少分歧成第1分歧反射光及第2分歧反射光,檢測在第1分歧反射光的光路附加有第1像散量的第1分歧反射光的射束形狀,並且檢測在第2分歧反射光的光路附加有大於第1像散量的第2像散量的第2分歧反射光的射束形狀,根據該射束形狀的檢測結果,取得關於雷射光入射面的位移的訊號,以所取得的訊號維持目標值的方式,沿著聚光用透鏡的光軸方向,使加工對象物及聚光用透鏡的至少任一者進行動作,雷射加工步驟係包含:第1步驟,其係設定偏移量;第2步驟,其係若在第1步驟所設定的偏移量為第1範圍,選擇第1分歧反射光的光路,若在第1步驟所設定的偏移量為比第1範圍為更深的第2範圍,則選擇第2分歧反射光的光路;第3步驟,其係以成為在第1步驟所設定的偏移量的方式,將測定用光及測定用光的反射光的至少任一者的成像狀態進行移動;第4步驟,其係以成為在第1步驟所設定的偏移量的方式,使加工對象物及聚光用透鏡的至少任一者進行動作;第5步驟,其係在第3步驟及第4步驟之後,取得目標值;及第6步驟,其係在第5步驟之後,一邊將加工用雷射光以聚光用透鏡聚光在加工對象物,一邊在第2步驟中所選擇出的分歧反射光的光路檢測射束形狀,根據該射束形狀的檢測結果,取得訊號,以所取得的訊號維持目標值的方式,沿著聚光用透鏡的光軸方向,使加工對象物及聚光用透鏡的至少任一者進行動作。A laser processing method according to one aspect of the present invention is a laser processing method in which a processing laser is focused on a processing object to form a modified region on the processing object. The laser processing method includes: a laser processing step; While focusing the processing laser light on the processing object with a focusing lens, the measurement light is focusing on the processing object with the focusing lens, and the laser light incident surface of the processing object is reflected. The reflected light of the measurement light is branched into at least the first branched reflected light and the second branched reflected light, and the beam shape of the first branched reflected light with a first astigmatism amount added to the optical path of the first branched reflected light is detected, and Detect the beam shape of the second divergent reflected light with a second astigmatism amount that is greater than the first astigmatism amount on the optical path of the second divergent reflected light, and obtain the laser beam incident surface based on the detection result of the beam shape. The displacement signal moves at least one of the processing object and the light-condensing lens along the optical axis direction of the light-converging lens so that the obtained signal maintains the target value. The laser processing step includes: Step 1, which Set the offset; in the second step, if the offset set in the first step is the first range, the optical path of the first branched reflected light is selected. If the offset set in the first step is If the first range is a deeper second range, the optical path of the second divergent reflected light is selected. In the third step, the measurement light and the measurement light are set so as to have the offset amount set in the first step. The imaging state of at least one of the reflected light is moved. In the fourth step, at least one of the object to be processed and the lens for focusing is moved so as to become the offset amount set in the first step. ; The fifth step is to obtain the target value after the third step and the fourth step; and the sixth step is to condensate the laser light for processing with the condenser lens while processing the object after the fifth step Object, while detecting the beam shape in the optical path of the branched reflected light selected in the second step, obtaining a signal based on the detection result of the beam shape, and maintaining the target value with the obtained signal, the light is collected along the light path. The optical axis of the lens allows the object to be processed and the light to be focused. At least either one is operated.

在該雷射加工方法中,亦可若偏移為較深,可將有關將取得的訊號之分歧反射光所附加的像散量加大(若較淺,則減小)。藉由上述知見,可抑制所取得的訊號的傾斜變得過於平緩。因此,可精度佳地檢測雷射光入射面的位移。 (發明之效果)In this laser processing method, if the offset is deep, the amount of astigmatism added to the divergent reflected light of the obtained signal can be increased (if it is shallower, it is reduced). With the above knowledge, it is possible to suppress the tilt of the obtained signal from becoming too gentle. Therefore, the displacement of the incident surface of the laser light can be detected with high accuracy. (Effect of the invention)

藉由本發明之一態樣,可提供可精度佳地檢測雷射光入射面的位移的雷射加工裝置及雷射加工方法。According to one aspect of the present invention, a laser processing device and a laser processing method capable of detecting a displacement of a laser light incident surface with high accuracy can be provided.

以下參照圖示,詳加說明實施形態。其中,在各圖中對同一或相當部分係標註同一符號,且省略重複說明。Hereinafter, embodiments will be described in detail with reference to the drawings. It should be noted that the same or corresponding parts are denoted by the same symbols in each figure, and repeated descriptions are omitted.

在實施形態之雷射加工裝置及雷射加工方法中,係藉由對加工對象物聚光雷射光,沿著切斷預定線,在加工對象物形成改質區域。因此,首先,參照圖1~圖6說明改質區域的形成。In the laser processing apparatus and laser processing method according to the embodiment, a modified region is formed in the processing object by concentrating laser light on the processing object along a predetermined cutting line. Therefore, first, the formation of the modified region will be described with reference to FIGS. 1 to 6.

如圖1所示,雷射加工裝置100係具備有:將作為加工用雷射光的雷射光L進行脈衝振盪之作為加工用雷射光源的雷射光源101;將雷射光L導光的光學系103;及用以將雷射光L聚光的聚光用透鏡105。雷射加工裝置100係具備有:用以支持被照射以聚光用透鏡105所聚光的雷射光L的加工對象物1的支持台107;用以使支持台107移動的載台111;控制雷射光源101,俾以調節雷射光L的輸出(脈衝能量、光強度)或脈衝寬幅、脈衝波形等的雷射光源控制部102;及控制載台111的移動的載台控制部115。As shown in FIG. 1, the laser processing device 100 is provided with a laser light source 101 that oscillates laser light L, which is laser light for processing, as a laser light source for processing, and an optical system that guides laser light L. 103; and a condenser lens 105 for condensing the laser light L. The laser processing apparatus 100 includes a support table 107 for supporting the processing object 1 irradiated with the laser light L condensed by the focusing lens 105, a stage 111 for moving the support table 107, and control. The laser light source 101 is a laser light source control unit 102 that adjusts the output (pulse energy, light intensity) or pulse width of the laser light L, and a stage control unit 115 that controls the movement of the stage 111.

在雷射加工裝置100中,由雷射光源101被出射的雷射光L係在光學系103被導引,藉由聚光用透鏡105被聚光在載置在支持台107上的加工對象物1的內部。載台111與此一起被移動,加工對象物1相對於雷射光L,沿著切斷預定線5被相對移動。藉此,沿著切斷預定線5的改質區域被形成在加工對象物1。其中,在此,為了使雷射光L相對移動而使載台111移動,但是亦可使聚光用透鏡105移動,或者亦可使該等二者移動。In the laser processing apparatus 100, the laser light L emitted from the laser light source 101 is guided by the optical system 103, and is focused by the focusing lens 105 on the processing object placed on the support table 107. 1 inside. The stage 111 is moved with this, and the processing object 1 is relatively moved along the planned cutting line 5 with respect to the laser light L. Thereby, a modified region along the planned cutting line 5 is formed in the processing object 1. Here, the stage 111 is moved in order to relatively move the laser light L, but the condenser lens 105 may be moved, or both of them may be moved.

以加工對象物1而言,係使用包含以半導體材料所形成的半導體基板或以壓電材料所形成的壓電基板等的板狀構件(例如基板、晶圓等)。如圖2所示,在加工對象物1係設定有用以切斷加工對象物1的切斷預定線5。切斷預定線5係以直線狀延伸的假想線。若在加工對象物1的內部形成改質區域,如圖3所示,在將聚光點(聚光位置)P對合在加工對象物1的內部的狀態下,使雷射光L沿著切斷預定線5(亦即以圖2的箭號A方向)相對移動。藉此,如圖4、圖5及圖6所示,改質區域7沿著切斷預定線5而形成在加工對象物1,沿著切斷預定線5所形成的改質區域7成為切斷起點區域8。For the object 1 to be processed, a plate-shaped member (for example, a substrate, a wafer, or the like) including a semiconductor substrate formed of a semiconductor material or a piezoelectric substrate formed of a piezoelectric material is used. As shown in FIG. 2, the processing object 1 is provided with a planned cutting line 5 for cutting the processing object 1. The planned cutting line 5 is an imaginary line extending linearly. If a modified region is formed inside the processing object 1, as shown in FIG. 3, the laser light L is cut along the cutting state in a state where the focusing point (condensing position) P is aligned inside the processing object 1. The predetermined breaking line 5 (that is, in the direction of arrow A in FIG. 2) is relatively moved. Thereby, as shown in FIG. 4, FIG. 5, and FIG. 6, the modified region 7 is formed on the object 1 along the planned cutting line 5, and the modified region 7 formed along the planned cutting line 5 is cut. Broken starting area 8.

聚光點P係指雷射光L所聚光的部位。切斷預定線5並非侷限於直線狀,亦可為曲線狀,亦可為該等組合的3次元狀,亦可為經座標指定者。切斷預定線5並非侷限於假想線,亦可為在加工對象物1的表面3實際劃出的線。改質區域7亦有連續形成的情形,亦有斷續形成的情形。改質區域7可為列狀,亦可為點狀,總之改質區域7至少形成在加工對象物1的內部即可。此外,有以改質區域7為起點而形成龜裂的情形,龜裂及改質區域7亦可露出於加工對象物1的外表面(表面3、背面、或外周面)。形成改質區域7時的雷射光入射面亦可為加工對象物1的背面,而非為限定於加工對象物1的表面3者。The condensing point P refers to a portion where the laser light L is condensed. The planned cutting line 5 is not limited to a straight line, may be a curved line, may be a three-dimensional shape of these combinations, or may be designated by coordinates. The planned cutting line 5 is not limited to an imaginary line, and may be a line actually drawn on the surface 3 of the processing object 1. The modified region 7 may be formed continuously or intermittently. The modified region 7 may be in a row shape or a dot shape. In short, the modified region 7 may be formed at least inside the processing object 1. In addition, a crack may be formed from the modified region 7 as a starting point, and the crack and the modified region 7 may be exposed on the outer surface (surface 3, back surface, or outer peripheral surface) of the object 1 to be processed. The laser light incident surface when the modified region 7 is formed may be the back surface of the processing object 1 instead of being limited to the surface 3 of the processing object 1.

順帶一提,若在加工對象物1的內部形成改質區域7,雷射光L係透過加工對象物1,並且尤其在位於加工對象物1的內部的聚光點P近傍被吸收。藉此,在加工對象物1形成改質區域7。此時,在加工對象物1的表面3,由於雷射光L的能量密度低,因此並不會有加工對象物1的表面3熔融的情形。另一方面,若在加工對象物1的表面3或背面形成改質區域7,雷射光L尤其在位於表面3或背面的聚光點P近傍被吸收,由表面3或背面被熔融而去除,形成孔穴或溝槽等去除部。Incidentally, if the modified region 7 is formed inside the processing object 1, the laser light L is transmitted through the processing object 1 and is particularly absorbed near the light-condensing point P located inside the processing object 1. Thereby, a modified region 7 is formed in the object 1. At this time, since the energy density of the laser light L is low on the surface 3 of the processing object 1, the surface 3 of the processing object 1 does not melt. On the other hand, if a modified region 7 is formed on the surface 3 or the back surface of the object 1, the laser light L is absorbed particularly near the light-condensing point P located on the surface 3 or the back surface, and is melted and removed by the surface 3 or the back surface. A cutout such as a hole or a groove is formed.

改質區域7係指密度、折射率、機械強度或其他物理特性與周圍不同的狀態的區域。以改質區域7而言,例如有熔融處理區域(意指一旦熔融後再固化的區域、熔融狀態中的區域、及由熔融而再固化的狀態中的區域之中至少任一個)、裂痕區域、絕緣破壞區域、折射率變化區域等,亦有該等混合存在的區域。此外,以改質區域7而言,有在加工對象物1的材料中,改質區域7的密度與非改質區域的密度相比較呈變化的區域、或形成有晶格缺陷的區域。若加工對象物1的材料為單晶矽,改質區域7亦可謂為高位錯密度區域。The modified region 7 refers to a region where the density, refractive index, mechanical strength, or other physical characteristics are different from those of the surroundings. The modified region 7 includes, for example, a melt-treated region (meaning at least one of a region that is solidified after being melted, a region in a molten state, and a region that is re-solidified by melting), and a crack region. , Insulation damage area, refractive index change area, etc., there are also such mixed areas. In addition, the modified region 7 includes a region in which the density of the modified region 7 is changed from the density of the non-modified region in the material of the processing object 1 or a region in which lattice defects are formed. If the material of the processing object 1 is single crystal silicon, the modified region 7 may also be referred to as a high dislocation density region.

熔融處理區域、折射率變化區域、改質區域7的密度與非改質區域的密度相比較呈變化的區域、及形成有晶格缺陷的區域係另外有在該等區域的內部或改質區域7與非改質區域的界面內含有龜裂(碎裂、微裂痕)的情形。內含的龜裂係有遍及改質區域7的全面的情形、或僅形成在一部分或複數部分的情形。加工對象物1係包含由具有結晶構造的結晶材料所成之基板。例如加工對象物1係包含由氮化鎵(GaN)、矽(Si)、碳化矽(SiC)、LiTaO3 、及藍寶石(Al2 O3 )的至少任一者所形成的基板。換言之,加工對象物1係包含例如氮化鎵基板、矽基板、SiC基板、LiTaO3 基板、或藍寶石基板。結晶材料亦可為異方性結晶及等方性結晶之任意者。此外,加工對象物1亦可包含由具有非結晶構造(非晶質構造)的非結晶材料所成之基板,亦可包含例如玻璃基板。The melt-processed region, the refractive index change region, the density of the modified region 7 and the density of the non-modified region are changed compared to the density of the non-modified region, and the region where the lattice defect is formed is also inside or modified region of these regions. 7 Cracks (cracks, micro-cracks) are contained in the interface with the non-modified region. The internal cracking system may cover the entire area of the modified region 7 or may be formed only in one part or plural parts. The object 1 to be processed includes a substrate made of a crystalline material having a crystalline structure. For example, the processing target 1 includes a substrate formed of at least any one of gallium nitride (GaN), silicon (Si), silicon carbide (SiC), LiTaO 3 , and sapphire (Al 2 O 3 ). In other words, the processing object 1 includes, for example, a gallium nitride substrate, a silicon substrate, a SiC substrate, a LiTaO 3 substrate, or a sapphire substrate. The crystalline material may be any of anisotropic crystals and isotropic crystals. The processing object 1 may include a substrate made of an amorphous material having an amorphous structure (amorphous structure), and may include, for example, a glass substrate.

在實施形態中,係沿著切斷預定線5,形成複數改質點(spot)(加工痕),藉此可形成改質區域7。此時,因複數改質點集聚而成為改質區域7。關於改質點,考慮所被要求的切斷精度、所被要求的切斷面的平坦性、加工對象物1的厚度、種類、結晶方位等,可適當控制該大小或所發生的龜裂的長度。此外,在實施形態中,可沿著切斷預定線5,形成改質點作為改質區域7。In the embodiment, a plurality of modified spots (processing marks) are formed along the planned cutting line 5, whereby the modified region 7 can be formed. At this time, a plurality of modified spots are gathered to form a modified region 7. Regarding the modification point, the required cutting accuracy, the required flatness of the cutting surface, the thickness, type, and crystal orientation of the object 1 can be considered, and the size or the length of the cracks can be appropriately controlled. . In addition, in the embodiment, a modified point may be formed as the modified region 7 along the planned cutting line 5.

接著,說明實施形態之雷射加工裝置及雷射加工方法。以下係例示將加工對象物1的背面21設為雷射光入射面的情形。將加工對象物1的厚度方向作為Z方向來說明。Next, a laser processing apparatus and a laser processing method according to the embodiment will be described. The following is an example in which the back surface 21 of the object 1 is set as a laser light incident surface. The thickness direction of the object 1 will be described as the Z direction.

如圖7所示,雷射加工裝置300係在框體231內具備有:雷射光源202、反射型空間光調變器203、4f光學系241、及聚光光學系204。雷射加工裝置300係藉由對加工對象物1聚光雷射光L,沿著切斷預定線5,在加工對象物1形成改質區域7。As shown in FIG. 7, the laser processing apparatus 300 includes a laser light source 202, a reflective spatial light modulator 203, a 4f optical system 241, and a condensing optical system 204 in a housing 231. The laser processing apparatus 300 focuses the laser light L on the processing object 1 and forms a modified region 7 on the processing object 1 along the planned cutting line 5.

雷射光源202係出射雷射光L者。雷射光源202係將具有1μs以下之脈衝寬幅的雷射光亦即脈衝雷射光出射作為雷射光L。雷射光源202係包含超短脈衝雷射光源作為雷射振盪器。以雷射振盪器而言,係可由例如固體雷射、光纖雷射或外部調變元件等所構成。雷射光源202係包含有調整雷射光L的輸出的輸出調整部。以輸出調整部而言,可由λ/2波長板單元及偏光板單元等所構成。此外,雷射光源202係包含有一邊調整雷射光L的直徑一邊平行化的擴束器。The laser light source 202 emits laser light L. The laser light source 202 emits laser light having a pulse width of 1 μs or less, that is, pulsed laser light, as the laser light L. The laser light source 202 includes an ultra-short pulse laser light source as a laser oscillator. For a laser oscillator, it can be composed of, for example, a solid laser, a fiber laser, or an external modulation element. The laser light source 202 includes an output adjustment unit that adjusts the output of the laser light L. The output adjustment unit can be composed of a λ / 2 wavelength plate unit, a polarizing plate unit, and the like. The laser light source 202 includes a beam expander that is parallelized while adjusting the diameter of the laser light L.

由雷射光源202所出射的雷射光L的波長係包含在500~550nm、1000~1150nm或1300~1400nm的任何波長帶。在此的雷射光L的波長為1064nm。如上所示之雷射光源202係以朝水平方向出射雷射光L的方式,以螺絲等被固定在框體231的頂板236。The wavelength of the laser light L emitted from the laser light source 202 includes any wavelength band of 500 to 550 nm, 1000 to 1150 nm, or 1300 to 1400 nm. The wavelength of the laser light L here is 1064 nm. The laser light source 202 shown above is fixed to the top plate 236 of the frame 231 with screws or the like so as to emit the laser light L in a horizontal direction.

反射型空間光調變器203係將由雷射光源202被出射的雷射光L進行調變者。反射型空間光調變器203係例如反射型液晶(LCOS:Liquid Crystal on Silicon)的空間光調變器(SLM:Spatial Light Modulator)。反射型空間光調變器203係將由水平方向入射的雷射光L進行調變,並且相對水平方向以斜上方反射。The reflective spatial light modulator 203 is a modulator that modulates the laser light L emitted from the laser light source 202. The reflective spatial light modulator 203 is, for example, a spatial light modulator (SLM: Spatial Light Modulator) of a reflective liquid crystal (LCOS: Liquid Crystal on Silicon). The reflection-type spatial light modulator 203 modulates the laser light L incident from the horizontal direction and reflects it obliquely upward from the horizontal direction.

如圖8所示,反射型空間光調變器203係藉由依序積層矽基板213、驅動電路層914、複數像素電極214、介電體多層膜反射鏡等反射膜215、配向膜999a、液晶層216、配向膜999b、透明導電膜217、及玻璃基板等透明基板218而構成。透明基板218係具有沿著預定平面的表面218a。透明基板218的表面218a係構成反射型空間光調變器203的表面。透明基板218係由例如玻璃等光透過性材料所構成。透明基板218係將由反射型空間光調變器203的表面218a所入射的預定波長的雷射光L,透過至反射型空間光調變器203的內部。透明導電膜217係形成在透明基板218的背面上。透明導電膜217係由透過雷射光L的導電性材料(例如ITO)所構成。As shown in FIG. 8, the reflective spatial light modulator 203 is formed by sequentially stacking a reflective film 215 such as a silicon substrate 213, a driving circuit layer 914, a plurality of pixel electrodes 214, a dielectric multilayer film reflector, an alignment film 999a, and a liquid crystal. The layer 216, the alignment film 999b, the transparent conductive film 217, and a transparent substrate 218 such as a glass substrate are configured. The transparent substrate 218 has a surface 218a along a predetermined plane. The surface 218a of the transparent substrate 218 is a surface constituting the reflective spatial light modulator 203. The transparent substrate 218 is made of a light-transmitting material such as glass. The transparent substrate 218 transmits the laser light L of a predetermined wavelength incident on the surface 218 a of the reflective spatial light modulator 203 to the inside of the reflective spatial light modulator 203. The transparent conductive film 217 is formed on the back surface of the transparent substrate 218. The transparent conductive film 217 is made of a conductive material (for example, ITO) that transmits the laser light L.

複數像素電極214係沿著透明導電膜217而以矩陣狀配列在矽基板213上。複數像素電極214係以例如鋁等金屬材料所形成。複數像素電極214的表面214a係平坦而且平滑地予以加工。複數像素電極214係藉由設在驅動電路層914的主動矩陣電路予以驅動。The plurality of pixel electrodes 214 are arranged on the silicon substrate 213 in a matrix shape along the transparent conductive film 217. The plurality of pixel electrodes 214 are formed of a metal material such as aluminum. The surface 214a of the plurality of pixel electrodes 214 is flat and smoothly processed. The plurality of pixel electrodes 214 are driven by an active matrix circuit provided in the driving circuit layer 914.

主動矩陣電路係設在複數像素電極214與矽基板213之間。主動矩陣電路係按照欲由反射型空間光調變器203輸出的光像,控制對各像素電極214的施加電壓。例如主動矩陣電路係具有:控制以沿著表面218a的一方向排列的各像素列的施加電壓的第1驅動器電路;及控制以與該一方向呈正交而且沿著表面218a的另一方向排列的各像素列的施加電壓的第2驅動器電路。如上所示之主動矩陣電路係構成為藉由控制部250(參照圖7),預定電壓被施加至以雙方的驅動器電路所指定的像素的像素電極214。The active matrix circuit is provided between the plurality of pixel electrodes 214 and the silicon substrate 213. The active matrix circuit controls the voltage applied to each pixel electrode 214 in accordance with the light image to be output by the reflective spatial light modulator 203. For example, the active matrix circuit includes a first driver circuit that controls the applied voltage of each pixel column arranged in one direction along the surface 218a, and controls that it is arranged orthogonal to the one direction and arranged in the other direction along the surface 218a. A second driver circuit for applying a voltage to each pixel column. The active matrix circuit described above is configured such that a predetermined voltage is applied to the pixel electrode 214 of a pixel designated by both driver circuits by the control unit 250 (see FIG. 7).

配向膜999a、999b係配置在液晶層216的兩端面,使液晶分子群以一定方向配列。配向膜999a、999b係由例如聚醯亞胺等高分子材料所形成。在配向膜999a、999b中與液晶層216的接觸面係施行有刷磨(rubbing)處理等。The alignment films 999a and 999b are arranged on both end surfaces of the liquid crystal layer 216, so that the liquid crystal molecular groups are aligned in a certain direction. The alignment films 999a and 999b are formed of a polymer material such as polyimide. A contact surface with the liquid crystal layer 216 in the alignment films 999a and 999b is subjected to a rubbing treatment or the like.

液晶層216係配置在複數像素電極214與透明導電膜217之間。液晶層216係按照藉由各像素電極214與透明導電膜217所形成的電場來將雷射光L進行調變。亦即,若藉由驅動電路層914的主動矩陣電路,在各像素電極214被施加電壓時,在透明導電膜217與各像素電極214之間形成有電場,液晶分子216a的配列方向依形成在液晶層216的電場大小而改變。接著,若雷射光L透過透明基板218及透明導電膜217而入射至液晶層216時,該雷射光L係在通過液晶層216之間藉由液晶分子216a予以調變,在反射膜215作反射之後,再次藉由液晶層216予以調變來進行出射。The liquid crystal layer 216 is disposed between the plurality of pixel electrodes 214 and the transparent conductive film 217. The liquid crystal layer 216 modulates the laser light L according to an electric field formed by each of the pixel electrodes 214 and the transparent conductive film 217. That is, if an active matrix circuit of the driving circuit layer 914 is used, an electric field is formed between the transparent conductive film 217 and each pixel electrode 214 when a voltage is applied to each pixel electrode 214, and the alignment direction of the liquid crystal molecules 216a is formed in The magnitude of the electric field of the liquid crystal layer 216 changes. Next, when the laser light L passes through the transparent substrate 218 and the transparent conductive film 217 and enters the liquid crystal layer 216, the laser light L is modulated by the liquid crystal molecules 216a through the liquid crystal layer 216, and is reflected on the reflection film 215. Thereafter, the liquid crystal layer 216 is modulated again to emit light.

此時,藉由控制部250(參照圖7),控制被施加至各像素電極214的電壓,依該電壓,在液晶層216中被夾在透明導電膜217與各像素電極214的部分的折射率會改變(對應各像素的位置的液晶層216的折射率會改變)。藉由該折射率的變化,可按照所施加的電壓,使雷射光L的相位按液晶層216的每個像素改變。亦即,可按每個像素,藉由液晶層216賦予對應全像圖案的相位調變。入射至調變圖案且透過的雷射光L係其波面被調整,在構成雷射光L的各光線中與行進方向呈正交的方向的成分的相位會產生偏移。因此,藉由適當設定反射型空間光調變器203所顯示的調變圖案,雷射光L可進行調變(例如雷射光L的強度、振幅、相位、偏光等可進行調變)。At this time, the voltage applied to each pixel electrode 214 is controlled by the control unit 250 (see FIG. 7), and according to this voltage, the refraction of the portion of the liquid crystal layer 216 sandwiched between the transparent conductive film 217 and each pixel electrode 214 is controlled. The rate is changed (the refractive index of the liquid crystal layer 216 corresponding to the position of each pixel is changed). With this change in refractive index, the phase of the laser light L can be changed for each pixel of the liquid crystal layer 216 according to the applied voltage. That is, the phase adjustment corresponding to the full-image pattern can be given to each pixel by the liquid crystal layer 216. The laser light L incident to the modulation pattern and transmitted has its wavefront adjusted, and a phase of a component in a direction orthogonal to the traveling direction among the respective rays constituting the laser light L is shifted. Therefore, by appropriately setting the modulation pattern displayed by the reflective spatial light modulator 203, the laser light L can be modulated (for example, the intensity, amplitude, phase, and polarization of the laser light L can be modulated).

返回至圖7,4f光學系241係調整藉由反射型空間光調變器203被調變的雷射光L的波面形狀的調整光學系。4f光學系241係具有第1透鏡241a及第2透鏡241b。第1透鏡241a及第2透鏡241b係反射型空間光調變器203與第1透鏡241a之間的光路的距離成為第1透鏡241a的第1焦點距離f1,聚光光學系204與第2透鏡241b之間的光路的距離成為第2透鏡241b的第2焦點距離f2,第1透鏡241a與第2透鏡241b之間的光路的距離成為第1焦點距離f1與第2焦點距離f2的和(亦即f1+f2),以第1透鏡241a及第2透鏡241b成為兩側遠心光學系統的方式,被配置在反射型空間光調變器203與聚光光學系204之間的光路上。藉由4f光學系241,可抑制以反射型空間光調變器203予以調變的雷射光L因空間傳播而波面形狀改變且像差增大的情形。Returning to FIG. 7, the 4f optical system 241 is an adjustment optical system that adjusts the wavefront shape of the laser light L modulated by the reflective spatial light modulator 203. The 4f optical system 241 includes a first lens 241a and a second lens 241b. The first lens 241a and the second lens 241b are the distance of the optical path between the reflective spatial light modulator 203 and the first lens 241a, and become the first focal distance f1 of the first lens 241a. The focusing optical system 204 and the second lens The distance between the optical paths between 241b becomes the second focal distance f2 of the second lens 241b, and the distance between the optical paths between the first lens 241a and the second lens 241b becomes the sum of the first focal distance f1 and the second focal distance f2 (also That is, f1 + f2) is arranged on the optical path between the reflective spatial light modulator 203 and the condenser optical system 204 so that the first lens 241a and the second lens 241b become a telecentric optical system on both sides. With the 4f optical system 241, it is possible to suppress a situation in which the laser light L modulated by the reflection-type spatial light modulator 203 changes the wavefront shape and increases aberration due to space propagation.

聚光光學系204係將藉由雷射光源202被出射而藉由反射型空間光調變器203被調變的雷射光L、與藉由後述之AF單元212被出射的測定用光LB1聚光在加工對象物1。聚光光學系204係透過包含壓電元件等所構成的驅動單元232而被設置在框體231的底板233。聚光光學系204為聚光用透鏡,包含有複數透鏡所構成。The condensing optical system 204 condenses the laser light L emitted by the laser light source 202 and modulated by the reflective spatial light modulator 203 and the measurement light LB1 emitted by the AF unit 212 described later. Light on the processing object 1. The condensing optical system 204 is provided on the bottom plate 233 of the housing 231 through a driving unit 232 including a piezoelectric element and the like. The condensing optical system 204 is a lens for condensing, and includes a plurality of lenses.

在構成為如以上所示之雷射加工裝置300中,由雷射光源202被出射的雷射光L係在框體231內以水平方向行進之後,藉由反射鏡205a被反射至下方,藉由衰減器207調整光強度。之後,雷射光L係藉由反射鏡205b而以水平方向被反射,藉由射束均勻器260,雷射光L的強度分布被均一化而入射至反射型空間光調變器203。In the laser processing apparatus 300 configured as described above, after the laser light L emitted from the laser light source 202 travels horizontally in the housing 231, it is reflected downward by the mirror 205a, and The attenuator 207 adjusts the light intensity. Thereafter, the laser light L is reflected in the horizontal direction by the reflecting mirror 205b, and the intensity distribution of the laser light L is uniformized by the beam homogenizer 260, and is incident on the reflective spatial light modulator 203.

入射至反射型空間光調變器203的雷射光L係藉由透過液晶層216所顯示的調變圖案,按照該調變圖案予以調變。之後,雷射光L係藉由反射鏡206a被反射至上方,藉由λ/2波長板228,變更偏光方向,且藉由反射鏡206b而以水平方向被反射而入射至4f光學系241。The laser light L incident on the reflective spatial light modulator 203 is modulated in accordance with the modulation pattern displayed by passing through the liquid crystal layer 216. After that, the laser light L is reflected upward by the reflector 206a, the polarization direction is changed by the λ / 2 wavelength plate 228, and it is reflected in the horizontal direction by the reflector 206b and is incident on the 4f optical system 241.

入射至4f光學系241的雷射光L係以平行光入射至聚光光學系204的方式被調整波面形狀。具體而言,雷射光L係透過第1透鏡241a且被收斂,藉由反射鏡219朝下方被反射,經由聚光點O而發散,並且透過第2透鏡241b,以成為平行光的方式被再次收斂。接著,雷射光L係依序透過二向分光鏡(dichroic mirror)210、238而入射至聚光光學系204,藉由聚光光學系204被聚光在被載置在載台111上的加工對象物1內。The laser light L incident on the 4f optical system 241 is adjusted to have a wavefront shape such that parallel light is incident on the condensing optical system 204. Specifically, the laser light L passes through the first lens 241a and is converged, is reflected downward by the reflector 219, is diverged through the light collecting point O, and passes through the second lens 241b to be parallel light again. convergence. Next, the laser light L sequentially passes through the dichroic mirrors 210 and 238 and is incident on the condensing optical system 204, and the condensing optical system 204 is condensed on the processing placed on the stage 111. Inside the object 1.

此外,雷射加工裝置300係在框體231內具備有:用以觀察加工對象物1的雷射光入射面的表面觀察單元211;及用以將聚光光學系204與加工對象物1的距離進行微調整的AF(AutoFocus,自動對焦)單元212。In addition, the laser processing apparatus 300 includes a surface observation unit 211 in the housing 231 for observing the laser light incident surface of the processing object 1, and a distance between the condensing optical system 204 and the processing object 1. An AF (AutoFocus) unit 212 that performs fine adjustment.

表面觀察單元211係具有:出射可見光VL1的觀察用光源211a;及接受在加工對象物1的雷射光入射面被反射的可見光VL1的反射光VL2來進行檢測的檢測器211b。在表面觀察單元211中,由觀察用光源211a被出射的可見光VL1在反射鏡208、半鏡209及二向分光鏡210、238被反射/透過,在聚光光學系204朝向加工對象物1被聚光。在加工對象物1的雷射光入射面被反射的反射光VL2在聚光光學系204被聚光而在二向分光鏡238、210被透過/反射之後,透過半鏡209而在檢測器211b被受光。The surface observation unit 211 includes a light source 211a for observation that emits visible light VL1, and a detector 211b that detects reflected light VL2 of visible light VL1 reflected on the laser light incident surface of the processing object 1. In the surface observation unit 211, the visible light VL1 emitted from the observation light source 211a is reflected / transmitted by the reflecting mirror 208, the half mirror 209, and the dichroic mirrors 210 and 238, and is focused toward the processing object 1 in the condenser optical system 204. Spotlight. The reflected light VL2 reflected on the laser light incident surface of the processing object 1 is condensed by the condensing optical system 204 and transmitted / reflected by the dichroic beam splitters 238 and 210, and then transmitted through the half mirror 209 and then by the detector 211b By light.

AF單元212係出射測定用光LB1,且接受在雷射光入射面作反射的測定用光LB1的反射光LB2來進行檢測,藉此取得沿著切斷預定線5的雷射光入射面的位移資料亦即誤差訊號(關於位移的訊號)。AF單元212係當形成改質區域7時,將所取得的誤差訊號輸出至控制部250。控制部250係根據該誤差訊號,使驅動單元232驅動,以沿著雷射光入射面的起伏的方式使聚光光學系204以該光軸方向作往返移動。關於AF單元212的構成及動作,詳容後述。The AF unit 212 emits the measurement light LB1 and detects the reflected light LB2 of the measurement light LB1 reflected on the incident surface of the laser light, thereby obtaining displacement data of the incident surface of the laser light along the planned cutting line 5 This is the error signal (signal about displacement). The AF unit 212 outputs the acquired error signal to the control unit 250 when the modified region 7 is formed. The control unit 250 drives the drive unit 232 based on the error signal, and causes the condensing optical system 204 to move back and forth in the direction of the optical axis so as to fluctuate along the incident surface of the laser light. The configuration and operation of the AF unit 212 will be described in detail later.

雷射加工裝置300係具備有控制該雷射加工裝置300之各部的動作的控制部250。控制部250係藉由CPU(Central Processing Unit,中央處理單元)、ROM(Read Only Memory,唯讀記憶體)及RAM(Random Access Memory,隨機存取記憶體)等所構成。The laser processing apparatus 300 is provided with the control part 250 which controls the operation | movement of each part of this laser processing apparatus 300. The control unit 250 is composed of a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like.

控制部250係控制雷射光源202的動作,由雷射光源202使雷射光L出射。控制部250係控制雷射光源202的動作,調節由雷射光源202被出射的雷射光L的輸出或脈衝寬幅等。控制部250係當形成改質區域7時,以雷射光L的聚光點P位於離加工對象物1的表面3或背面21為預定距離,而且雷射光L的聚光點P沿著切斷預定線5相對移動的方式,控制框體231、載台111的位置、及驅動單元232的驅動的至少1個。控制部250係具有上述雷射光源控制部102及上述載台控制部115的功能。The control unit 250 controls the operation of the laser light source 202, and the laser light source 202 emits the laser light L. The control unit 250 controls the operation of the laser light source 202, and adjusts the output of the laser light L emitted from the laser light source 202, the pulse width, and the like. When the modified section 7 is formed, the control unit 250 sets the light-condensing point P of the laser light L at a predetermined distance from the front surface 3 or the back surface 21 of the object 1, and the light-condensing point P of the laser light L is cut along The relative movement of the predetermined line 5 controls at least one of the positions of the housing 231, the stage 111, and the driving of the driving unit 232. The control unit 250 has the functions of the laser light source control unit 102 and the stage control unit 115.

控制部250係當形成改質區域7時,對反射型空間光調變器203中的各像素電極214施加預定電壓,使預定的調變圖案顯示在液晶層216。藉此,控制部250係使雷射光L以反射型空間光調變器203調變成所希望。液晶層216所顯示的調變圖案係根據例如欲形成改質區域7的位置、所照射的雷射光L的波長、加工對象物1的材料、及聚光光學系204或加工對象物1的折射率等而被預先導出,且記憶在控制部250。調變圖案係包含:用以補正在雷射加工裝置300所產生的個別差異(例如在液晶層216所產生的變形)的個別差異補正圖案、用以補正球面像差的球面像差補正圖案等。When the modified region 7 is formed, the control unit 250 applies a predetermined voltage to each pixel electrode 214 in the reflective spatial light modulator 203 to display a predetermined modulation pattern on the liquid crystal layer 216. As a result, the control unit 250 tunes the laser light L to the desired spatial light modulator 203. The modulation pattern displayed by the liquid crystal layer 216 is based on, for example, the position where the modified region 7 is to be formed, the wavelength of the laser light L to be irradiated, the material of the processing object 1, and the refraction of the focusing optical system 204 or the processing object 1. The rate and the like are derived in advance and stored in the control unit 250. The modulation pattern includes: an individual difference correction pattern for correcting individual differences (for example, deformation generated in the liquid crystal layer 216) generated by the laser processing device 300, a spherical aberration correction pattern for correcting spherical aberration, and the like .

接著,具體說明AF單元212的構成。Next, the configuration of the AF unit 212 will be specifically described.

如圖9所示,AF單元212係具備有:測定用光源30、位移檢測部50、成像狀態調整部70。測定用光源30係出射測定用光LB1。測定用光源30係可出射具有彼此不同的波長的複數光的任一者。測定用光源30係具有:複數SLD(Super Luminescent Diode,超輻射發光二極體)光源31、32。在測定用光源30中,係藉由控制部250,由複數SLD光源31、32之中,被選擇出射對加工對象物1的反射率高的波長的光的一方。測定用光源30係由所被選擇的SLD光源31、32的其中一方,出射對加工對象物1的反射率高的波長的光作為測定用光LB1。SLD光源31係出射例如650nm的波長的光。SLD光源32係出射例如830nm的波長的光。As shown in FIG. 9, the AF unit 212 includes a measurement light source 30, a displacement detection unit 50, and an imaging state adjustment unit 70. The measurement light source 30 emits measurement light LB1. The measurement light source 30 is capable of emitting any of a plurality of light having different wavelengths. The light source 30 for measurement includes a plurality of SLD (Super Luminescent Diode) light sources 31 and 32. In the light source 30 for measurement, the control unit 250 selects one of the plurality of SLD light sources 31 and 32 to emit light of a wavelength having a high reflectance to the processing object 1. The light source for measurement 30 is one of the selected SLD light sources 31 and 32 and emits light having a wavelength of high reflectance to the object 1 as the light for measurement LB1. The SLD light source 31 emits light having a wavelength of, for example, 650 nm. The SLD light source 32 emits light having a wavelength of, for example, 830 nm.

以測定用光源30而言,並非限定於SLD光源31、32,例如可具有LED(Light Emitting Diode,發光二極體)光源,亦可具有LD(Laser Diode,雷射二極體)光源。測定用光LB1的波長若在作為雷射光入射面的背面21具有大於零的反射率即可。測定用光源30亦可無法出射複數波長的光,例如僅具有SLD光源31、32的任1個,僅可出射1波長的光。The measurement light source 30 is not limited to the SLD light sources 31 and 32, and may include, for example, an LED (Light Emitting Diode) light source or an LD (Laser Diode) laser light source. It is only necessary that the wavelength of the measurement light LB1 has a reflectance greater than zero on the back surface 21 which is the incident surface of the laser light. The light source 30 for measurement may not be capable of emitting light with a plurality of wavelengths, for example, only one of the SLD light sources 31 and 32 is provided, and only light of one wavelength may be emitted.

測定用光源30係透過在複數波長的雷射光的合成所使用的WDM(Wavelength Division Multiplexing,波長分波多工)33與單模態的光纖34,將所出射的測定用光LB1傳送至調整光學系60。其中,若測定用光源30僅出射1波長的測定用光LB1時,並不需要WDM33。亦可取代光纖34,而使用空間光傳送元件。調整光學系60係具有複數種透鏡,以測定用光LB1成為適當射束徑的方式進行調整。The light source 30 for measurement transmits WDM (Wavelength Division Multiplexing) 33 and a single-mode optical fiber 34 for synthesizing laser light at a plurality of wavelengths, and transmits the emitted measurement light LB1 to the adjustment optical system. 60. However, if the measurement light source 30 emits only the measurement light LB1 of one wavelength, the WDM 33 is not required. Instead of the optical fiber 34, a spatial light transmission element may be used. The adjustment optical system 60 has a plurality of types of lenses, and is adjusted so that the measurement light LB1 becomes an appropriate beam diameter.

位移檢測部50係根據在加工對象物1的雷射光入射面亦即背面21被反射的測定用光LB1的反射光LB2,檢測背面21的位移。位移檢測部50係具有:第1分歧部51、第2分歧部(分歧部)52、第1及第2像散附加部(像散附加部)53、54、第1及第2射束形狀檢測部(射束形狀檢測部)55、56、以及誤差訊號生成部57。The displacement detection unit 50 detects the displacement of the back surface 21 based on the reflected light LB2 of the measurement light LB1 reflected on the laser light incident surface of the processing object 1, that is, the back surface 21. The displacement detection section 50 includes a first branching section 51, a second branching section (branching section) 52, first and second astigmatism adding sections (astigmatism adding section) 53, 54, and first and second beam shapes. The detection sections (beam shape detection sections) 55 and 56 and the error signal generation section 57.

第1分歧部51係將測定用光LB1與反射光LB2分歧的分光器。第1分歧部51係將測定用光LB1及反射光LB2的光路分為測定用光LB1的光路與反射光LB2的光路。第1分歧部51係使測定用光LB1透過,另一方面,將反射光LB2作反射。第1分歧部51係在測定用光LB1及反射光LB2的光路中被設在成像狀態調整部70與調整光學系60之間。The first branching section 51 is a beam splitter that splits the measurement light LB1 and the reflected light LB2. The first branching section 51 divides the optical path of the measurement light LB1 and the reflected light LB2 into an optical path of the measurement light LB1 and an optical path of the reflected light LB2. The first branching portion 51 transmits the measurement light LB1 and reflects the reflected light LB2. The first branching section 51 is provided between the imaging state adjustment section 70 and the adjustment optical system 60 in the optical paths of the measurement light LB1 and the reflected light LB2.

第2分歧部52係將在第1分歧部51作分歧的反射光LB2,分歧成第1分歧反射光LS1與第2分歧反射光LS2的分光器。第2分歧部52係將反射光LB2的光路OP,分為第1分歧反射光LS1的光路亦即第1分歧光路OP1、與第2分歧反射光LS2的光路亦即第2分歧光路OP2。第2分歧部52係使第2分歧反射光LS2透過,另一方面,將第1分歧反射光LS1反射。第2分歧部52係在反射光LB2的光路OP被設在第1分歧部51的下游。The second branching portion 52 is a beam splitter that splits the reflected light LB2 at the first branching portion 51 and splits into a first branched reflected light LS1 and a second branched reflected light LS2. The second branching section 52 divides the optical path OP of the reflected light LB2 into an optical path of the first branched reflected light LS1, that is, the first branched optical path OP1, and an optical path of the second branched reflected light LS2, that is, the second branched optical path OP2. The second branched portion 52 transmits the second branched reflected light LS2 and reflects the first branched reflected light LS1. The second branching portion 52 is provided on the optical path OP of the reflected light LB2 downstream of the first branching portion 51.

第1像散附加部53係在第1分歧光路OP1被設在第2分歧部52的下游。第1像散附加部53係將小於第2像散附加部54所附加的像散量的第1像散量附加在第1分歧反射光LS1。像散量係表示像散大小的尺度,在此,定義如下。與測定用光LB1為同一波長的平行射束入射至像散附加部時,存在有投影在與由像散附加部所出射的射束的光軸呈垂直的面的射束寬幅的短軸成為最小的點,在與光軸呈垂直的面上,將其短軸的方向設為像散附加部的特性軸。當將相對像散附加部的特性軸方向的焦點距離設為fL1,且相對與特性軸呈垂直的方向的焦點距離設為fL2時,將fL2/fL1設為像散量。第1像散附加部53係藉由凸透鏡53a與柱面透鏡53b的組合所構成。例如凸透鏡53a的焦點距離為40mm,柱面透鏡53b的焦點距離為100mm。The first astigmatism adding section 53 is provided downstream of the second branching section 52 on the first branching optical path OP1. The first astigmatism adding section 53 adds a first astigmatism amount smaller than the amount of astigmatism added by the second astigmatism adding section 54 to the first branched reflected light LS1. The amount of astigmatism is a scale representing the magnitude of astigmatism, and is defined as follows. When a parallel beam having the same wavelength as the measurement light LB1 is incident on the astigmatism adding section, there is a short axis of the beam width projected on a plane perpendicular to the optical axis of the beam emitted from the astigmatism adding section. The minimum point is the direction of the short axis of the astigmatism adding part on the surface perpendicular to the optical axis. When the focal distance in the characteristic axis direction of the relative astigmatism adding portion is set to fL1 and the focal distance in the direction perpendicular to the characteristic axis is set to fL2, fL2 / fL1 is set to the amount of astigmatism. The first astigmatism adding portion 53 is configured by a combination of a convex lens 53a and a cylindrical lens 53b. For example, the focal distance of the convex lens 53a is 40 mm, and the focal distance of the cylindrical lens 53b is 100 mm.

第2像散附加部54係在第2分歧光路OP2中透過反射鏡58而設在第2分歧部52的下游。第2像散附加部54係在第2分歧反射光LS2附加與第1像散量不同的像散量。第2像散附加部54係在第2分歧反射光LS2附加大於第1像散量的第2像散量。第2像散附加部54係藉由凸透鏡54a與柱面透鏡54b的組合所構成。例如凸透鏡53a的焦點距離為75mm,柱面透鏡53b的焦點距離為75mm。The second astigmatism adding section 54 is provided downstream of the second branching section 52 through the reflecting mirror 58 in the second branching optical path OP2. The second astigmatism adding unit 54 adds an astigmatism amount different from the first astigmatism amount to the second branched reflected light LS2. The second astigmatism adding unit 54 adds a second astigmatism amount to the second branched reflected light LS2 that is larger than the first astigmatism amount. The second astigmatism adding section 54 is configured by a combination of a convex lens 54 a and a cylindrical lens 54 b. For example, the focal distance of the convex lens 53a is 75 mm, and the focal distance of the cylindrical lens 53b is 75 mm.

第1射束形狀檢測部55係設在第1分歧光路OP1。第1射束形狀檢測部55係透過過濾器59a來接受附加有第1像散量的第1分歧反射光LS1,且檢測該第1分歧反射光LS1的射束形狀。第2射束形狀檢測部56係設在第2分歧光路OP2。第2射束形狀檢測部56係透過過濾器59b來接受附加有第2像散量的第2分歧反射光LS2,且檢測該第2分歧反射光LS2的射束形狀。The first beam shape detection unit 55 is provided on the first branched optical path OP1. The first beam shape detection unit 55 transmits the filter 59a to receive the first branched reflection light LS1 to which the first astigmatism amount is added, and detects the beam shape of the first branched reflection light LS1. The second beam shape detection unit 56 is provided on the second branched optical path OP2. The second beam shape detection unit 56 transmits the filter 59b to receive the second branched reflection light LS2 to which the second astigmatism amount is added, and detects the beam shape of the second branched reflection light LS2.

過濾器59a係將第1分歧反射光LS1中的雷射光L的波長的光減衰。過濾器59a係防止雷射光L的波長的光入射至第1射束形狀檢測部55。過濾器59b係將第2分歧反射光LS2中的雷射光L的波長的光進行減衰。過濾器59b係防止雷射光L的波長的光入射至第2射束形狀檢測部56。The filter 59a attenuates light having a wavelength of the laser light L in the first branched reflected light LS1. The filter 59 a prevents light having a wavelength of the laser light L from entering the first beam shape detection unit 55. The filter 59b attenuates light having a wavelength of the laser light L in the second branched reflected light LS2. The filter 59 b prevents light having a wavelength of the laser light L from entering the second beam shape detection unit 56.

可使用4象限感測器,作為第1射束形狀檢測部55及第2射束形狀檢測部56。第1射束形狀檢測部55及第2射束形狀檢測部56係將其檢測結果輸出至誤差訊號生成部57。具體而言,第1射束形狀檢測部55及第2射束形狀檢測部56的各個係將形成在其受光面的射束形狀進行分割而受光,將對應該各光量的輸出值(電壓值)輸出至誤差訊號生成部57。其中,以第1射束形狀檢測部55而言,若可檢測射束形狀,即未特別限定,亦可為例如2次元PD(Photo Diode,光電二極體)陣列。A four-quadrant sensor can be used as the first beam shape detection section 55 and the second beam shape detection section 56. The first beam shape detection unit 55 and the second beam shape detection unit 56 output the detection results to the error signal generation unit 57. Specifically, each of the first beam shape detection unit 55 and the second beam shape detection unit 56 receives light by dividing the beam shape formed on the light receiving surface thereof, and outputs the light (voltage value) corresponding to each light amount. ) Is output to the error signal generating section 57. Among them, the first beam shape detection unit 55 is not particularly limited as long as it can detect the beam shape, and may be, for example, a two-dimensional PD (Photo Diode) array.

誤差訊號生成部57係接受來自第1射束形狀檢測部55及第2射束形狀檢測部56的輸出,生成誤差訊號。具體而言,誤差訊號生成部57係根據設在藉由控制部250所選擇出的第1及第2分歧光路OP1、OP2的其中一方的第1及第2射束形狀檢測部55、56的任一者的檢測結果,生成誤差訊號。誤差訊號生成部57係若藉由控制部250被選擇出第1分歧光路OP1時,使用第1射束形狀檢測部55的檢測結果,生成誤差訊號。誤差訊號生成部57係若藉由控制部250被選擇出第2分歧光路OP2時,使用第2射束形狀檢測部56的檢測結果來生成誤差訊號。誤差訊號生成部57係將所生成的誤差訊號輸出至控制部250。The error signal generation unit 57 receives the outputs from the first beam shape detection unit 55 and the second beam shape detection unit 56 to generate an error signal. Specifically, the error signal generation unit 57 is based on the first and second beam shape detection units 55 and 56 provided in one of the first and second branched optical paths OP1 and OP2 selected by the control unit 250. The detection result of any one generates an error signal. The error signal generation unit 57 generates an error signal using the detection result of the first beam shape detection unit 55 when the first branched optical path OP1 is selected by the control unit 250. The error signal generation unit 57 generates an error signal using the detection result of the second beam shape detection unit 56 when the second branched optical path OP2 is selected by the control unit 250. The error signal generation unit 57 outputs the generated error signal to the control unit 250.

在此,以下具體說明誤差訊號及其取得原理。Here, the error signal and its obtaining principle will be specifically described below.

AF單元212係將加工對象物1的雷射光入射面亦即背面21的位移(相對位移),使用Through the Lens方式,亦即,使用通過將雷射光L聚光的聚光光學系204的測定用光LB1來進行計測。此外,AF單元212係利用像散來計測背面21的位移。AF單元212係利用光學系的距離會依聚光光學系204與背面21的相對位移的變化而變化,且通過光學系時的測定用光LB1的反射光LB2的像點的位置會移動的情形。The AF unit 212 measures the displacement (relative displacement) of the laser light incident surface of the processing object 1, that is, the back surface 21, using the Through the Lens method, that is, the measurement using the focusing optical system 204 that condenses the laser light L. Measurement was performed with light LB1. The AF unit 212 measures the displacement of the back surface 21 using astigmatism. The AF unit 212 uses an optical system whose distance varies depending on the relative displacement of the condensing optical system 204 and the back surface 21, and the position of the image point of the reflected light LB2 of the measurement light LB1 when passing through the optical system moves. .

在AF單元212中,反射光LB2的射束形狀係依加工對象物1中背面21由後述之基準位置的位移,在4象限感測器等的射束形狀檢測部55、56上變化。具體而言,在背面21作反射的反射光LB2係具有依該背面21的位移而異的射束加寬角,形成為按照該射束加寬角,在射束形狀檢測部55、56上為不同的射束形狀。例如圖10所示,反射光LB2的射束形狀H係在縱長橢圓(參照圖10(a))與正圓(參照圖10(b))與橫長橢圓(參照圖10(c))之間變化。在AF單元212中,將如上所示變化的射束形狀在射束形狀檢測部55、56中分割成受光面SA 、SB 、SC 、SD 來進行檢測。接著,在AF單元212中,係根據射束形狀的檢測結果,藉由下式(1)的運算來生成誤差訊號。   誤差訊號=[(IA +IC )-(IB +ID )]/[(IA +IB +IC +ID )]…(1)   其中,   IA :根據受光面SA 中的光量所輸出的訊號值、   IB :根據受光面SB 中的光量所輸出的訊號值、   IC :根據受光面SC 中的光量所輸出的訊號值、   ID :根據受光面SD 中的光量所輸出的訊號值。In the AF unit 212, the beam shape of the reflected light LB2 is changed by the beam shape detection sections 55, 56 of a 4-quadrant sensor or the like according to the displacement of the back surface 21 in the processing object 1 from a reference position described later. Specifically, the reflected light LB2 reflected on the back surface 21 has a beam widening angle that varies according to the displacement of the back surface 21, and is formed so that the beam widening angle is formed on the beam shape detection sections 55 and 56. For different beam shapes. For example, as shown in FIG. 10, the beam shape H of the reflected light LB2 is formed by a vertically long ellipse (see FIG. 10 (a)), a perfect circle (see FIG. 10 (b)), and a horizontally long ellipse (see FIG. 10 (c)). Change between. In the AF unit 212, the change in beam shape as shown above is divided into light receiving surfaces S A, S B, S C , S D to detect the beam shape detecting unit 55,56. Next, in the AF unit 212, an error signal is generated by the calculation of the following formula (1) based on the detection result of the beam shape. Error signal = [(I A + I C )-(I B + I D )] / [(I A + I B + I C + I D )] ... (1) Among them, I A : According to the light receiving surface S A Signal value output by the amount of light in the light, I B : Signal value output by the amount of light in the light receiving surface S B , I C : Signal value output by the amount of light in the light receiving surface S C , I D : According to the value of the light receiving surface S The signal value output by the amount of light in D.

圖11係顯示誤差訊號之一例的圖表。在圖11所示之圖表中,橫軸係表示雷射光入射面離誤差訊號成為零的位置的位移,縱軸係表示誤差訊號的大小。位移愈小(圖中愈往左側),雷射光入射面位於愈接近聚光光學系204的方向。位移愈大(圖中愈往右側),雷射光入射面位於愈遠離聚光光學系204的方向。FIG. 11 is a graph showing an example of an error signal. In the graph shown in FIG. 11, the horizontal axis represents the displacement of the laser light incident surface from the position where the error signal becomes zero, and the vertical axis represents the magnitude of the error signal. The smaller the displacement (the leftward in the figure), the closer the laser light incident surface is to the direction of the condensing optical system 204. The larger the displacement (the farther to the right in the figure), the farther the laser light incident surface is located away from the condenser optical system 204.

如圖11所示,誤差訊號係在圖表上變化成S字曲線狀。誤差訊號成為零時的位移係當射束形狀在射束形狀檢測部55、56上成為正圓時的位移。在誤差訊號中可利用的範圍係成為零周邊的單調遞減的範圍(以下將該範圍稱為「測長區域」)。本實施形態之測長區域係由因加工對象物1的翹曲所致之在雷射加工開始位置的背面21的位移的不均,考慮實用性,至少為±10μm。本實施形態之測長區域為±20μm以上。As shown in FIG. 11, the error signal changes into an S-shaped curve on the graph. The displacement when the error signal becomes zero is the displacement when the beam shape becomes a perfect circle on the beam shape detection sections 55 and 56. The range usable in the error signal is a monotonically decreasing range around the zero periphery (hereinafter, this range is referred to as a "length measurement area"). The length-measuring region in this embodiment is a variation in displacement of the back surface 21 at the laser processing start position due to warpage of the object 1 to be processed, and it is at least ± 10 μm in consideration of practicality. The length measurement area of this embodiment is ± 20 μm or more.

返回至圖9,成像狀態調整部70係移動測定用光LB1及反射光LB2的成像狀態。成像狀態調整部70係在測定用光LB1及反射光LB2的光路中被設在第1分歧部51與二向分光鏡238之間。成像狀態調整部70係具有凹透鏡71及凸透鏡72。成像狀態調整部70係根據來自控制部250的指令,使凹透鏡71及凸透鏡72間的距離改變,而將該成像狀態移動。藉此,成像狀態調整部70係調整偏移量。成像狀態的移動係包含:將該光路上的所有成像位置關係的集合映射為其他成像位置關係的集合的情形(亦即成像位置的移動)。Returning to FIG. 9, the imaging state adjustment unit 70 moves the imaging state of the measurement light LB1 and the reflected light LB2. The imaging state adjustment section 70 is provided between the first branching section 51 and the dichroic beam splitter 238 in the optical paths of the measurement light LB1 and the reflected light LB2. The imaging state adjustment unit 70 includes a concave lens 71 and a convex lens 72. The imaging state adjustment unit 70 changes the distance between the concave lens 71 and the convex lens 72 according to an instruction from the control unit 250, and moves the imaging state. Thereby, the imaging state adjustment unit 70 adjusts the shift amount. The movement system of the imaging state includes a case where a set of all imaging position relationships on the optical path is mapped to a set of other imaging position relationships (that is, a movement of the imaging position).

基準位置係指後述之基準位置定位時(步驟S5)所設定的雷射光入射面的深度位置。具體而言,基準位置係對背面21以表面觀察單元211進行攝像,所投影的光柵的對比成為最大的狀態之時的該背面21的位置。The reference position refers to the depth position of the laser light incident surface set at the time of reference position positioning (step S5) described later. Specifically, the reference position is the position of the back surface 21 when the back surface 21 is imaged by the surface observation unit 211 and the contrast of the projected grating is maximized.

成像狀態調整部70係若加工對象物1為最大具有775μm的厚度的矽基板時,藉由將測定用光LB1及反射光LB2的成像狀態移動,在0μm~-180μm的範圍使偏移量為可變。When the imaging state adjustment unit 70 is a silicon substrate having a maximum thickness of 775 μm, the imaging state adjustment unit 70 moves the imaging state of the measurement light LB1 and the reflected light LB2 so that the shift amount is in the range of 0 μm to -180 μm. variable.

若加工對象物1為厚度775μm的矽基板且在加工對象物1內離背面21為較淺的位置形成改質區域7時,成像狀態調整部70的收斂功率變弱,偏移量係形成為0μm或接近0μm的值,聚光光學系204與背面21之間的距離係形成為遠距離。相對於此,若加工對象物1為厚度775μm的矽基板且在加工對象物1內離背面21為較深的位置形成改質區域7時,成像狀態調整部70的收斂功率變強,偏移量係形成為-180μm或接近-180μm的值,聚光光學系204與表面3之間的距離係形成為近距離。When the processing object 1 is a silicon substrate having a thickness of 775 μm and the modified region 7 is formed at a position shallower from the back surface 21 in the processing object 1, the convergence power of the imaging state adjustment unit 70 is weakened, and the offset is formed as With a value of 0 μm or close to 0 μm, the distance between the condensing optical system 204 and the back surface 21 is formed as a long distance. In contrast, when the processing object 1 is a silicon substrate having a thickness of 775 μm and the modified region 7 is formed at a position deeper from the back surface 21 in the processing object 1, the convergence power of the imaging state adjustment unit 70 becomes stronger and shifts. The amount system is formed to a value of -180 μm or close to -180 μm, and the distance system between the condensing optical system 204 and the surface 3 is formed to be a short distance.

控制部250係根據來自上位控制器等上位系統的指令,設定偏移量。控制部250係以成為所設定的偏移量的方式控制成像狀態調整部70。具體而言,在控制部250係預先記憶有關於按每個偏移量所設定的凹透鏡71的位置的資料表格。控制部250係參照資料表格來求出成為所設定的偏移量的凹透鏡71的位置,將使該凹透鏡71移動至所求出的凹透鏡71的位置的指令輸出至成像狀態調整部70。The control unit 250 sets an offset according to a command from a higher-level system such as a higher-level controller. The control unit 250 controls the imaging state adjustment unit 70 so as to become a set offset amount. Specifically, the control unit 250 stores a data table about the position of the concave lens 71 set for each shift amount in advance. The control unit 250 refers to the data table to find the position of the concave lens 71 that is the set offset, and outputs a command to move the concave lens 71 to the determined position of the concave lens 71 to the imaging state adjustment unit 70.

控制部250係在第1分歧光路OP1及第2分歧光路OP2之中,選擇對應在成像狀態調整部70所移動的成像狀態的一方。具體而言,控制部250係由第1分歧光路OP1及第2分歧光路OP2之中,選擇對應在成像狀態調整部70所調整的偏移量的一方。更具體而言,控制部250係若所設定的偏移量位於第1範圍時,選擇第1分歧反射光LS1的光路亦即第1分歧光路OP1。若所設定的偏移量位於第2範圍時,選擇第2分歧反射光LS2的光路亦即第2分歧光路OP2。第2範圍係比第1範圍為更深的範圍。第1範圍係0μm以下、大於-40μm的範圍。第2範圍係-40μm以下、-180μm以上的範圍。控制部250係將有關第1分歧光路OP1及第2分歧光路OP2之選擇結果的指示輸出至誤差訊號生成部57。控制部250係以在誤差訊號生成部57所生成的誤差訊號維持目標值(在此為零)的方式,使驅動單元232進行動作。The control unit 250 selects one of the first branched optical path OP1 and the second branched optical path OP2 corresponding to the imaging state moved by the imaging state adjustment unit 70. Specifically, the control unit 250 selects one of the first branched optical path OP1 and the second branched optical path OP2 corresponding to the offset amount adjusted by the imaging state adjustment unit 70. More specifically, the control unit 250 selects the first branched optical path OP1 that is the optical path of the first branched reflected light LS1 when the set offset is in the first range. When the set offset is in the second range, the optical path of the second branched reflected light LS2, that is, the second branched optical path OP2 is selected. The second range is a deeper range than the first range. The first range is a range of 0 μm or less and greater than -40 μm. The second range is a range of -40 μm or less and −180 μm or more. The control unit 250 outputs an instruction regarding the selection results of the first branched optical path OP1 and the second branched optical path OP2 to the error signal generating unit 57. The control unit 250 operates the drive unit 232 so that the error signal generated by the error signal generation unit 57 maintains the target value (here, zero).

AF單元212係另外具有:第1操縱反射鏡81、及第2操縱反射鏡82。第1及第2操縱反射鏡81、82係在測定用光LB1及反射光LB2的光路中,被配置在成像狀態調整部70與二向分光鏡238之間。第1及第2操縱反射鏡81、82係將測定用光LB1的光軸對合(進行校直)在雷射光L的光軸。第1及第2操縱反射鏡81、82係構成光軸調整機構。The AF unit 212 further includes a first steering mirror 81 and a second steering mirror 82. The first and second steering mirrors 81 and 82 are arranged between the imaging state adjustment unit 70 and the dichroic beam splitter 238 in the optical paths of the measurement light LB1 and the reflected light LB2. The first and second steering mirrors 81 and 82 align (align) the optical axis of the measurement light LB1 on the optical axis of the laser light L. The first and second steering mirrors 81 and 82 constitute an optical axis adjustment mechanism.

接著,說明在雷射加工裝置300中所實施之雷射加工方法。Next, a laser processing method performed in the laser processing apparatus 300 will be described.

本實施形態之雷射加工方法係被使用作為將加工對象物1進行雷射加工來製造複數晶片的晶片的製造方法。加工對象物1係呈板狀。加工對象物1係例如藍寶石基板、SiC基板、玻璃基板(強化玻璃基板)、矽基板、半導體基板或透明絕緣基板等。在此的加工對象物1係矽基板。在加工對象物1中與雷射光入射面側亦即背面21側為相反側的表面3側係形成有功能元件層。功能元件層係包含有配列成矩陣狀的複數功能元件(例如光二極體等受光元件、雷射二極體等發光元件、或形成為電路的電路元件等)。加工對象物1的背面21側係被研削成加工對象物1薄化至所希望的厚度為止。在加工對象物1設定有複數以通過相鄰功能元件間的方式延伸的切斷預定線5。複數切斷預定線5係以格子狀延伸。The laser processing method according to the present embodiment is used as a manufacturing method of a wafer in which a plurality of wafers are manufactured by laser processing the processing object 1. The object 1 to be processed has a plate shape. The object 1 to be processed is, for example, a sapphire substrate, a SiC substrate, a glass substrate (reinforced glass substrate), a silicon substrate, a semiconductor substrate, or a transparent insulating substrate. The object to be processed 1 is a silicon substrate. A functional element layer is formed in the processing object 1 on the surface 3 side which is the side opposite to the laser light incident surface side, that is, the back surface 21 side. The functional element layer system includes a plurality of functional elements arranged in a matrix (for example, a light receiving element such as a photodiode, a light emitting element such as a laser diode, or a circuit element formed as a circuit). The back surface 21 side of the processing object 1 is ground so that the processing object 1 is thinned to a desired thickness. A plurality of planned cutting lines 5 are set in the processing object 1 so as to extend between adjacent functional elements. The plurality of planned cutting lines 5 extend in a grid pattern.

在本實施形態之雷射加工方法中,首先,以背面21成為雷射光入射面的方式,在載台111的支持台107上載置加工對象物1。由雷射光源202使雷射光L出射,且使該雷射光L藉由聚光光學系204而聚光在加工對象物1的內部。同時,藉由控制部250,控制載台111的移動等,使該雷射光L朝向沿著切斷預定線5的加工行進方向相對移動(掃描),沿著切斷預定線5在加工對象物1的內部形成改質區域7。之後,將被黏貼在加工對象物1的表面3或背面21的擴展帶擴張而將加工對象物1切斷,且將加工對象物1切斷成複數晶片。In the laser processing method of this embodiment, first, the processing object 1 is placed on the support table 107 of the stage 111 so that the back surface 21 becomes a laser light incident surface. The laser light source 202 emits the laser light L, and the laser light L is condensed inside the processing object 1 by the focusing optical system 204. At the same time, the control unit 250 controls the movement of the stage 111, etc., so that the laser light L is relatively moved (scanned) toward the processing advance direction along the planned cutting line 5, and the object is processed along the planned cutting line 5. A modified region 7 is formed inside 1. After that, the expansion tape adhered to the front surface 3 or the back surface 21 of the processing object 1 is expanded to cut the processing object 1, and the processing object 1 is cut into a plurality of wafers.

在此,加工對象物1的背面21係因在表面3形成有功能元件層而起的應力等的影響,具有翹曲或起伏。因此,為了使雷射光L聚光而將改質區域7安定形成為所意圖的深度,必須進行將聚光光學系204與背面21的相對位移保持為所意圖的位移的控制。Here, the back surface 21 of the processing object 1 is warped or undulated due to the influence of stress and the like caused by the formation of the functional element layer on the surface 3. Therefore, in order to condense the laser light L and form the modified region 7 to a desired depth, it is necessary to perform control to maintain the relative displacement of the condenser optical system 204 and the back surface 21 to the intended displacement.

因此,在本實施形態之雷射加工方法中,係一邊將雷射光L聚光在加工對象物1,一邊將測定用光LB1聚光在加工對象物1。在背面21作反射的測定用光LB1的反射光LB2分歧成第1及第2分歧反射光LS1、LS2,檢測在第1分歧光路OP1附加有第1像散量的第1分歧反射光LS1的射束形狀,並且檢測在第2分歧光路OP2附加有第2像散量的第2分歧反射光LS2的射束形狀。根據該射束形狀的檢測結果,取得誤差訊號,且以該誤差訊號維持目標值的方式,藉由驅動單元232,使聚光光學系204以Z方向進行動作。具體而言,執行以下步驟。Therefore, in the laser processing method of this embodiment, the laser light L is focused on the processing target 1 while the measurement light LB1 is focused on the processing target 1. The reflected light LB2 of the measurement light LB1 reflected on the back surface 21 is branched into first and second branched reflected lights LS1 and LS2, and the first branched reflected light LS1 with a first astigmatism amount added to the first branched optical path OP1 is detected The beam shape detects the beam shape of the second branched reflected light LS2 with a second astigmatism amount added to the second branched optical path OP2. An error signal is obtained based on the detection result of the beam shape, and the focusing optical system 204 is caused to operate in the Z direction by the drive unit 232 so that the error signal maintains a target value. Specifically, perform the following steps.

亦即,如圖12所示,根據來自上位系統的指令,藉由控制部250,設定偏移量(步驟S1)。根據來自上位系統的指令,藉由控制部250,由測定用光源30的SLD光源31、32之中,選擇出射具有對加工對象物1之反射率高的波長的光的其中一方(步驟S2)。That is, as shown in FIG. 12, according to a command from a higher-level system, the offset is set by the control unit 250 (step S1). In accordance with an instruction from a higher-level system, the control unit 250 selects one of the SLD light sources 31 and 32 of the measurement light source 30 to emit light having a wavelength having a high reflectance to the processing object 1 (step S2). .

藉由控制部250,根據所設定的偏移量,選擇生成誤差訊號的分歧光路OP1、OP2(步驟S3)。在步驟S3中,若所設定的偏移量位於第1範圍(-40μm<偏移量≦0μm),選擇將第1像散量附加在第1分歧反射光LS1的光路亦即第1分歧光路OP1。若所設定的偏移量位於第2範圍( -180μm≦偏移量≦-40μm),選擇將大於第1像散量的第2像散量附加在第2分歧反射光LS2的光路亦即第2分歧光路OP2。The control unit 250 selects the branched optical paths OP1 and OP2 that generate error signals based on the set offset (step S3). In step S3, if the set offset amount is in the first range (-40 μm <offset amount ≦ 0 μm), the optical path of the first branched reflected light LS1, that is, the first branched optical path, is selected to be added to the first astigmatism amount. OP1. If the set offset is in the second range (-180 μm ≦ offset ≦ -40 μm), a second astigmatism amount greater than the first astigmatism amount is selected to be added to the optical path of the second branched reflected light LS2, that is, the first 2 branch optical path OP2.

藉由控制部250,以成為所設定的偏移量的方式控制成像狀態調整部70,移動測定用光LB1及反射光LB2的成像狀態(步驟S4)。在步驟S4中,參照資料表格,導出與所設定的偏移量相對應的凹透鏡71的位置,使凹透鏡71移動至該位置。The control unit 250 controls the imaging state adjustment unit 70 so as to have a set offset, and moves the imaging states of the measurement light LB1 and the reflected light LB2 (step S4). In step S4, referring to the data table, the position of the concave lens 71 corresponding to the set offset is derived, and the concave lens 71 is moved to that position.

執行使加工對象物1位於基準位置的基準位置定位(步驟S5)。在步驟S5中,將作為雷射光入射面的背面21以表面觀察單元211進行攝像,以背面21位於所投影的光柵的對比成為最大的狀態的深度位置的方式,藉由控制部250使載台111以Z方向移動。若將光柵進行投影的光的波長與測定用光LB1的波長相等,當偏移量為0μm之時,該階段的誤差訊號的大小係成為零。另一方面,若將光柵進行投影的光的波長與測定用光LB1的波長不同,當偏移量為0μm之時,該階段的誤差訊號的大小係成為對應對聚光光學系204的光柵投影光與測定用光LB1的色像差的大小的值。基準位置與偏移量係如上所示建立關連。之後,藉由控制部250,以成為所設定的偏移的方式,使載台111移動而使加工對象物1接近聚光光學系204(步驟S6)。The reference position positioning in which the object 1 is located at the reference position is performed (step S5). In step S5, the back surface 21 which is the laser light incident surface is imaged by the surface observation unit 211, and the stage is controlled by the control unit 250 such that the back surface 21 is located at a depth position where the contrast of the projected grating is maximized. 111 moves in the Z direction. If the wavelength of the light projected by the grating is equal to the wavelength of the measurement light LB1, when the offset is 0 μm, the magnitude of the error signal at this stage becomes zero. On the other hand, if the wavelength of the light projected by the grating is different from the wavelength of the measurement light LB1, when the offset is 0 μm, the magnitude of the error signal at this stage is corresponding to the projection of the grating on the condenser optical system 204 Value of the chromatic aberration between the light and the measurement light LB1. The reference position is related to the offset as shown above. After that, the control unit 250 moves the stage 111 so as to be a set offset to bring the processing object 1 closer to the condensing optical system 204 (step S6).

取得誤差訊號的目標值,且記憶在控制部250(步驟S7)。在步驟S7中,由測定用光源30之SLD光源31、32之中在上述步驟S2中所選擇出的其中一方出射測定用光LB1。測定用光LB1係以調整光學系60調整射束徑,通過第1分歧部51,且在成像狀態調整部70調整成像狀態之後,在第1及第2操縱反射鏡81、82及二向分光鏡238依序反射,藉由聚光光學系204被聚光在加工對象物1,且在背面21作反射。The target value of the error signal is acquired and stored in the control unit 250 (step S7). In step S7, one of the SLD light sources 31 and 32 of the measurement light source 30 selected in step S2 above emits the measurement light LB1. The measurement light LB1 is adjusted by the adjustment optical system 60 to adjust the beam diameter, passes through the first branching section 51, and after the imaging state is adjusted by the imaging state adjustment section 70, the first and second manipulation mirrors 81, 82, and the two-way beam splitting The mirror 238 sequentially reflects, and is condensed by the condensing optical system 204 on the processing object 1 and is reflected on the back surface 21.

在背面21作反射的反射光LB2係通過聚光光學系204,在二向分光鏡238、第2及第1操縱反射鏡82、81依序作反射,在成像狀態調整部70被調整成像狀態,在第1分歧部51作反射之後,在第2分歧部52被分歧為第1及第2分歧反射光LS1、LS2。第1分歧反射光LS1係在第1分歧光路OP1中,藉由第1像散附加部53附加第1像散量之後,透過過濾器59a而在第1射束形狀檢測部55被受光。第2分歧反射光LS2係在第2分歧光路OP2中,藉由第2像散附加部54附加第2像散量之後,透過過濾器59b而在第2射束形狀檢測部56被受光。誤差訊號生成部57係若在上述步驟S3中藉由控制部250選擇出第1分歧光路OP1時,按照上式(1),生成對應在第1射束形狀檢測部55所檢測到的射束形狀的誤差訊號。另一方面,若在上述步驟S3中藉由控制部250選擇出第2分歧光路OP2時,按照上式(1),生成對應在第2射束形狀檢測部56所檢測到的射束形狀的誤差訊號。將所生成的誤差訊號作為目標值而記憶在控制部205。The reflected light LB2 reflected on the back surface 21 passes through the condensing optical system 204, and is sequentially reflected by the dichroic beam splitter 238, the second and first manipulation mirrors 82 and 81, and the imaging state is adjusted by the imaging state adjusting section 70. After the first branching portion 51 reflects, the second branching portion 52 is branched into the first and second branched reflected lights LS1 and LS2. The first divergent reflected light LS1 is in the first divergent optical path OP1. After the first astigmatism amount is added by the first astigmatism adding unit 53, it passes through the filter 59a and is received by the first beam shape detecting unit 55. The second divergent reflected light LS2 is in the second divergent optical path OP2. After the second astigmatism amount is added by the second astigmatism adding section 54, it passes through the filter 59b and is received by the second beam shape detecting section 56. When the error signal generation unit 57 selects the first branched optical path OP1 by the control unit 250 in the above step S3, the beam corresponding to the beam detected by the first beam shape detection unit 55 is generated according to the above formula (1). Shape error signal. On the other hand, when the second branched optical path OP2 is selected by the control unit 250 in the above step S3, a beam shape corresponding to the beam shape detected by the second beam shape detection unit 56 is generated according to the above formula (1). Error signal. The generated error signal is stored in the control unit 205 as a target value.

接著,開始雷射加工(步驟S8)。在步驟S8中,一邊沿著切斷預定線5掃描雷射光L,一邊與上述步驟S7同樣地取得誤差訊號,以所取得的誤差訊號維持目標值的方式,藉由驅動單元232,使聚光光學系204以Z方向動作。藉此,連同雷射光L的掃描,一起執行聚光光學系204與背面21的相對位移被保持為一定的反饋控制,聚光光學系204追隨背面21的位移。之後,判定全部沿著切斷預定線5的雷射加工是否已完成(步驟S9)。若在步驟S9中為No,沿著雷射加工未完成的該切斷預定線5,反覆實施上述步驟S1~S9,另一方面,若在步驟S9中為Yes,雷射加工即結束。Next, laser processing is started (step S8). In step S8, while scanning the laser light L along the planned cutting line 5, an error signal is obtained in the same manner as in step S7 described above, and the obtained error signal is used to maintain the target value and the light is focused by the drive unit 232 The optical system 204 operates in the Z direction. Thereby, along with the scanning of the laser light L, the relative displacement of the condensing optical system 204 and the back surface 21 is maintained at a certain feedback control, and the condensing optical system 204 follows the displacement of the back surface 21. After that, it is determined whether laser processing has been completed along the planned cutting line 5 (step S9). If it is No in step S9, the above-mentioned steps S1 to S9 are repeatedly performed along the planned cutting line 5 in which laser processing is not completed. On the other hand, if it is Yes in step S9, the laser processing is ended.

圖13係顯示僅根據在第1射束形狀檢測部55所檢測到的射束形狀所生成的誤差訊號的圖表。在圖中係顯示偏移量從0μm至-180μm,以每10μm至每20μm進行變更時的各誤差訊號。如圖13所示,誤差訊號的傾斜係與偏移量(亦即,在成像狀態調整部70進行移動的成像狀態)具有相關。此外,可知偏移在加工對象物1愈成為較深位置,誤差訊號的傾斜愈過於平緩。其中,誤差訊號的傾斜係指對所取得的位移的誤差訊號的變動。誤差訊號的傾斜係指關於位移的誤差訊號的變化的比例。誤差訊號的傾斜係若誤差訊號在比例上呈單調遞減時,對應該比例常數。誤差訊號的傾斜係對應誤差訊號伴隨位移的變化而變動時的變動量。FIG. 13 is a graph showing an error signal generated based on only the beam shape detected by the first beam shape detection unit 55. In the figure, the error signals are shown when the offset is changed from 0 μm to -180 μm, and every 10 μm to 20 μm is changed. As shown in FIG. 13, the inclination of the error signal has a correlation with an offset amount (that is, an imaging state in which the imaging state adjustment section 70 is moved). In addition, it can be seen that the more the offset becomes deeper in the processing object 1, the more the tilt of the error signal becomes more gentle. The tilt of the error signal refers to the change of the error signal to the obtained displacement. The tilt of the error signal refers to the proportion of change in the error signal with respect to displacement. The tilt of the error signal corresponds to the proportional constant if the error signal decreases monotonically in proportion. The tilt of the error signal corresponds to the amount of change when the error signal changes with the change in displacement.

在此,以誤差訊號的傾斜過於平緩的要因而言,發現測定用光LB1的反射光LB2所附加的像散量與偏移量的失配。因此,在雷射加工裝置300中,按照偏移量,選擇第1及第2分歧光路OP1、OP2的其中一方,根據在所選擇的第1及第2分歧光路OP1、OP2的一方所檢測到的射束形狀,生成誤差訊號。藉此,可將在誤差訊號的生成所使用的第1及第2分歧反射光LS1、LS2的一方所附加的像散量,形成為對應偏移量者。結果,可抑制誤差訊號的傾斜過於平緩。因此,可精度佳地檢測雷射光入射面亦即背面21的位移。Here, for the reason that the tilt of the error signal is too gentle, a mismatch between the amount of astigmatism and the amount of shift added to the reflected light LB2 of the measurement light LB1 is found. Therefore, in the laser processing apparatus 300, one of the first and second branched optical paths OP1 and OP2 is selected in accordance with the offset, and based on the detection of the selected one of the first and second branched optical paths OP1 and OP2. The shape of the beam produces an error signal. As a result, the amount of astigmatism added to one of the first and second divergent reflected lights LS1 and LS2 used for generating the error signal can be formed to correspond to the amount of shift. As a result, the inclination of the error signal can be suppressed from being too gentle. Therefore, the displacement of the laser light incident surface, that is, the back surface 21 can be detected with high accuracy.

尤其,研削背面21至加工對象物1薄化至所希望厚度為止,因此形成在背面21形成有研削痕的狀態(形成多數深度極淺的溝槽的狀態)。此時,測定用光LB1在背面21散射而即使為相同位移,亦有誤差訊號不均之虞,因此若誤差訊號的傾斜過於平緩,在實用性可能產生問題。因此,如上所示若在背面21形成有研削痕,抑制誤差訊號的傾斜過於平緩的上述作用效果較為顯著。In particular, since the back surface 21 is ground until the object to be processed 1 is thinned to a desired thickness, a state where a grinding mark is formed on the back surface 21 (a state in which many grooves having a very shallow depth are formed) is formed. At this time, the measurement light LB1 is scattered on the back surface 21 and the error signal may be uneven even if it is the same displacement. Therefore, if the tilt of the error signal is too gentle, problems in practicality may occur. Therefore, if a grinding mark is formed on the back surface 21 as described above, the above-mentioned effect of suppressing the tilt of the error signal from being too gentle is significant.

在雷射加工裝置300中,若偏移量位於第1範圍,選擇第1分歧光路OP1,且若偏移量位於比第1範圍為更深的第2範圍,則選擇第2分歧光路OP2。此時,若偏移淺,可將附加有較小像散量的第1分歧反射光LS1使用在誤差訊號的生成,若偏移深,則可將附加有較大像散量的第2分歧反射光LS2使用在誤差訊號的生成。可抑制誤差訊號的傾斜過於平緩,可精度佳地檢測背面21的位移。In the laser processing apparatus 300, if the offset is in the first range, the first branched optical path OP1 is selected, and if the offset is in the second range that is deeper than the first range, the second branched optical path OP2 is selected. At this time, if the shift is shallow, the first divergent reflected light LS1 with a smaller astigmatism amount can be used for the generation of the error signal. If the shift is deep, the second divergence with a larger astigmatism amount can be used. The reflected light LS2 is used in the generation of the error signal. The tilt of the error signal can be suppressed from being too gentle, and the displacement of the back surface 21 can be detected with high accuracy.

圖14係顯示在雷射加工裝置300中所生成的誤差訊號的圖表。在圖中係顯示將偏移量由0μm至-180μm以每10μm至每20μm變更時的各誤差訊號。在圖中的各項目(系列)名稱中,若為根據第1分歧光路OP1的射束形狀的誤差訊號,標註「OP1」,若為根據第2分歧光路OP2的射束形狀的誤差訊號,則標註「OP2」。如圖14所示,可知藉由雷射加工裝置300,可抑制誤差訊號的傾斜過於平緩。例如在雷射加工裝置300中,誤差訊號係具有因研削痕所致之測定誤差成為實用範圍內的一定以上的傾斜。例如誤差訊號亦可在誤差訊號成為零的位移中,具有0.025/μm以上的傾斜的絕對值。例如誤差訊號亦可在誤差訊號成為零的位移中,具有0.0275/μm以上的傾斜的絕對值。FIG. 14 is a graph showing error signals generated in the laser processing apparatus 300. The figure shows various error signals when the offset is changed from 0 μm to -180 μm every 10 μm to every 20 μm. In the name of each item (series) in the figure, if it is an error signal based on the beam shape of the first branched optical path OP1, label "OP1", and if it is an error signal based on the beam shape of the second branched optical path OP2, then Mark "OP2". As shown in FIG. 14, it can be seen that the laser processing apparatus 300 can suppress the tilt of the error signal from being too gentle. For example, in the laser processing apparatus 300, the error signal has a tilt of more than a certain value within a practical range due to a measurement error due to a grinding mark. For example, the error signal may have an absolute value of a tilt of 0.025 / μm or more in the displacement where the error signal becomes zero. For example, the error signal may have an absolute value of a tilt of 0.0275 / μm or more in a displacement where the error signal becomes zero.

其中,若偏移量為-40μm,可知為根據第1分歧光路OP1的射束形狀的誤差訊號,或為根據第2分歧光路OP2的射束形狀的誤差訊號,其傾斜亦成為一定以上。因此,在本實施形態中,係將第1範圍形成為0μm以下且大於-40μm的範圍,將第2範圍形成為-40μm以下且-180μm以上的範圍,但是亦可將第1範圍形成為0μm以下且-40μm以上的範圍,將第2範圍形成為未達-40μm且-180μm以上的範圍。Among them, if the offset is -40 μm, it can be seen that it is an error signal based on the beam shape of the first branched optical path OP1 or an error signal based on the beam shape of the second branched optical path OP2, and the tilt thereof also becomes more than a certain value. Therefore, in this embodiment, the first range is set to a range of 0 μm or less and greater than -40 μm, and the second range is set to a range of -40 μm or less and −180 μm or more. However, the first range may also be set to 0 μm. In the following range of -40 μm or more, the second range is set to a range of less than -40 μm and −180 μm or more.

圖15係顯示僅根據在第2射束形狀檢測部56所檢測到的射束形狀所生成的誤差訊號的圖表。在圖中係顯示將偏移量由0μm至-180μm以每10μm至每20μm進行變更時的各誤差訊號。藉由圖15所示之結果,可知偏移在加工對象物1中愈成為較淺位置,誤差訊號的傾斜愈過於急遽,測長區域成為不充分。相對於此,在雷射加工裝置300中,可抑制誤差訊號的傾斜過於急遽,而且可充分確保測長區域(參照圖14)。FIG. 15 is a graph showing an error signal generated based on only the beam shape detected by the second beam shape detection unit 56. The figure shows each error signal when the offset is changed from 0 μm to -180 μm every 10 μm to every 20 μm. From the results shown in FIG. 15, it can be seen that the offset becomes shallower in the processing object 1, the tilt of the error signal becomes more sharp, and the length measurement area becomes insufficient. On the other hand, in the laser processing apparatus 300, it is possible to suppress the inclination of the error signal from being too sharp, and to sufficiently secure the length measurement area (see FIG. 14).

在雷射加工裝置300中,藉由控制部250設定偏移量,且以成為所被設定的偏移量的方式控制成像狀態調整部70。藉由該構成,可以成為所被設定的偏移量的方式,自動調整測定用光LB1及反射光LB2的成像狀態。In the laser processing apparatus 300, the offset amount is set by the control unit 250, and the imaging state adjustment unit 70 is controlled so as to be the set offset amount. With this configuration, it is possible to automatically adjust the imaging states of the measurement light LB1 and the reflected light LB2 as a set offset.

雷射加工裝置300係具備有使聚光光學系204以Z方向進行動作的驅動單元232,以誤差訊號維持目標值的方式,藉由控制部205,驅動單元232被動作。藉由該構成,可以追隨背面21的方式使聚光光學系204以Z方向移動。The laser processing apparatus 300 is provided with a drive unit 232 that causes the condensing optical system 204 to operate in the Z direction, and the drive unit 232 is operated by the control unit 205 so that an error signal maintains a target value. With this configuration, the focusing optical system 204 can be moved in the Z direction so as to follow the back surface 21.

雷射加工裝置300係具備有:使測定用光LB1的光軸對合在雷射光L的光軸的第1及第2操縱反射鏡81、82。藉由該構成,可將測定用光LB1的光軸精度佳地對合在雷射光L的光軸。The laser processing apparatus 300 includes first and second steering mirrors 81 and 82 that align the optical axis of the measurement light LB1 with the optical axis of the laser light L. With this configuration, the optical axis of the measurement light LB1 can be accurately aligned with the optical axis of the laser light L.

在雷射加工裝置300中,測定用光源30係出射複數波長的光之中具有對加工對象物1的反射率高的波長的光,作為測定用光LB1。藉此,可使測定用光LB1容易在背面21反射。In the laser processing apparatus 300, among the light beams of a plurality of wavelengths emitted from the measurement light source 30, light having a wavelength having a high reflectance to the processing object 1 is used as the measurement light LB1. Thereby, the measurement light LB1 can be easily reflected on the back surface 21.

順帶一提,亦考慮藉由縮短成像狀態調整部70與聚光光學系204之間的物理上的距離、或在其之間插入4f透鏡系而縮短光學上的距離,來抑制誤差訊號的傾斜的變化。但是,基於裝置構成上的限制,難以縮短該物理上的距離,而且插入4f透鏡系會造成裝置大型化,因此有難以實現的可能性。尤其,若配置第1及第2操縱反射鏡81、82,難以縮短該物理上的距離。此點,在雷射加工裝置300中,受到裝置構成上的限制少,此外,可抑制裝置大型化。在雷射加工裝置300中,係可配置第1及第2操縱反射鏡81、82。Incidentally, it is also considered to reduce the tilt of the error signal by shortening the physical distance between the imaging state adjustment section 70 and the condenser optical system 204 or by inserting a 4f lens system therebetween. The change. However, it is difficult to shorten the physical distance due to the limitation of the device configuration, and the insertion of a 4f lens system may increase the size of the device, which may make it difficult to achieve. In particular, if the first and second steering mirrors 81 and 82 are arranged, it is difficult to shorten the physical distance. In this regard, in the laser processing apparatus 300, there are few restrictions on the configuration of the apparatus, and further, the size of the apparatus can be suppressed. The laser processing apparatus 300 may include first and second steering mirrors 81 and 82.

圖16係顯示變形例之AF單元212B的一部分的構成圖。如圖16所示,AF單元212B的第1及第2射束形狀檢測部55、56各個亦可按照成像狀態調整部70的凹透鏡71的移動,沿著第1及第2分歧光路OP1、OP2各個移動。具體而言,亦可藉由控制部250,愈以偏移加深的方式移動凹透鏡71,使第1及第2射束形狀檢測部55、56以離第1及第2像散附加部53、54愈近的方向連動(換言之,亦可隨著偏移加深,將第1及第2射束形狀檢測部55、56接近第1及第2像散附加部53、54)。FIG. 16 is a configuration diagram showing a part of an AF unit 212B according to a modification. As shown in FIG. 16, each of the first and second beam shape detection sections 55 and 56 of the AF unit 212B may move along the first and second branched optical paths OP1 and OP2 according to the movement of the concave lens 71 of the imaging state adjustment section 70. Each move. Specifically, the concave portion 71 can also be moved by the control unit 250 in such a manner that the offset lens becomes deeper and deeper, so that the first and second beam shape detection units 55 and 56 are separated from the first and second astigmatism adding units 53, and 54 moves closer to each other (in other words, the first and second beam shape detection units 55 and 56 may be brought closer to the first and second astigmatism adding units 53 and 54 as the offset deepens.

圖17係用以說明藉由圖16的AF單元212B所得之效果的圖表。在圖17中係顯示根據在第1射束形狀檢測部55所檢測到的射束形狀所生成的誤差訊號。圖17(a)係第1射束形狀檢測部55為固定時的誤差訊號。圖17(b)係在AF單元212B所生成的誤差訊號,亦即第1射束形狀檢測部55為可動時的誤差訊號。如圖17(a)及圖17(b)所示,在變形例之AF單元212B中,對於任何偏移量,均可將誤差訊號的S字曲線,形成為在橫軸以零為中心取得均整的形狀。此係有助於PID控制等的響應性改善。FIG. 17 is a graph for explaining an effect obtained by the AF unit 212B of FIG. 16. FIG. 17 shows an error signal generated based on the beam shape detected by the first beam shape detection unit 55. FIG. 17 (a) is an error signal when the first beam shape detection unit 55 is fixed. FIG. 17 (b) is an error signal generated by the AF unit 212B, that is, an error signal when the first beam shape detection unit 55 is movable. As shown in FIG. 17 (a) and FIG. 17 (b), in the AF unit 212B of the modified example, for any offset amount, the S-shaped curve of the error signal can be formed to be obtained on the horizontal axis with zero as the center. Even shape. This system contributes to the improvement of responsiveness such as PID control.

在AF單元212B中,亦可取代第1及第2射束形狀檢測部55、56的移動,或除此之外,使第1及第2像散附加部53、54的凸透鏡53a、54a及柱面透鏡53b、54b的至少任一者同樣地移動。此時亦達成同樣效果。In the AF unit 212B, instead of the movement of the first and second beam shape detection sections 55 and 56 or in addition, the convex lenses 53a and 54a of the first and second astigmatism adding sections 53 and 54 and At least one of the cylindrical lenses 53b and 54b is similarly moved. The same effect was achieved at this time.

以上說明實施形態,惟本發明並非為侷限於上述實施形態者,亦可適用於在未變更各請求項所記載之要旨的範圍內進行變形或其他者。Although the embodiments have been described above, the present invention is not limited to those described above, and may be applied to modifications or others without changing the gist described in each claim.

在上述實施形態中,係藉由第2分歧部52,將反射光LB2的光路OP分歧成2光路(第1及第2分歧光路OP1、OP2),但是亦可分歧成3光路以上。若在3光路以上的光路的各個,設置:附加互相不同的大小的像散量的複數像散附加部、及檢測附加有像散的複數分歧反射光各個的射束形狀的複數射束形狀檢測部即可。此時,亦可由複數光路之中,以偏移愈深愈大的像散量被附加在分歧反射光的方式選擇光路,且根據所選擇出的光路的該分歧反射光的射束形狀的檢測結果,生成誤差訊號。In the above embodiment, the optical path OP of the reflected light LB2 is split into two optical paths (the first and second branched optical paths OP1 and OP2) by the second branching section 52, but may be branched into three or more optical paths. For each of the optical paths having three or more optical paths, a complex astigmatism adding unit for adding astigmatic amounts of mutually different sizes, and a complex beam shape detection for detecting each beam shape of the complex branched reflected light to which astigmatism is added are provided. Department. At this time, the optical path may also be selected from the plural optical paths such that astigmatism with a deeper and larger offset is added to the divergent reflected light, and the beam shape of the divergent reflected light of the selected optical path is detected. As a result, an error signal is generated.

在上述實施形態中,係在測定用光LB1及反射光LB2的光路中,在第1分歧部51與二向分光鏡238之間配置成像狀態調整部70,但是成像狀態調整部70的配置並未被限定。亦可取代上述實施形態之配置,或除此之外,在測定用光LB1的光路比第1分歧部51更為上游側、及在反射光LB2的光路OP在第1分歧部51與第2分歧部52之間的至少任一者,配置成像狀態調整部70。In the above embodiment, the imaging state adjustment unit 70 is arranged between the first branching portion 51 and the dichroic beam splitter 238 in the optical path of the measurement light LB1 and the reflected light LB2. Not limited. The arrangement of the above embodiment may be replaced, or in addition, the optical path of the measurement light LB1 is more upstream than the first branching portion 51, and the optical path OP of the reflected light LB2 is at the first branching portion 51 and the second At least one of the diverging sections 52 is provided with an imaging state adjustment section 70.

在上述實施形態中,係藉由凹透鏡71及凸透鏡72來構成成像狀態調整部70,但是成像狀態調整部70並未特別限定,亦可為例如可變焦點距離透鏡。上述實施形態的光學系係具備有使雷射光L透過且使測定用光LB1及反射光LB2反射的二向分光鏡238,但是亦可為具備有使雷射光L反射而且使測定用光LB1及反射光LB2透過的二向分光鏡的構成,來取而代之。同樣地,上述實施形態的光學系亦可為在第1分歧部51中使測定用光LB1反射而且使反射光LB2透過的構成。同樣地,上述實施形態的光學系亦可為在第2分歧部52中使第1分歧反射光LS1透過而且使第2分歧反射光LS2反射的構成。In the above embodiment, the imaging state adjustment unit 70 is configured by the concave lens 71 and the convex lens 72, but the imaging state adjustment unit 70 is not particularly limited, and may be, for example, a variable focus distance lens. The optical system of the above embodiment includes the dichroic beam splitter 238 that transmits the laser light L and reflects the measurement light LB1 and the reflected light LB2. However, the optical system may include the laser light L and the measurement light LB1 and The configuration of the dichroic mirror through which the reflected light LB2 passes is replaced. Similarly, the optical system of the above-mentioned embodiment may have a configuration in which the measurement light LB1 is reflected by the first branching portion 51 and the reflected light LB2 is transmitted. Similarly, the optical system of the above embodiment may have a configuration in which the first branched reflected light LS1 is transmitted through the second branched portion 52 and the second branched reflected light LS2 is reflected.

在上述實施形態中,在上述步驟S6與上述步驟S7之間,取得第1及第2射束形狀檢測部55、56的偏壓偏移值(未檢測射束形狀的狀態的第1及第2射束形狀檢測部55、56的輸出值)來進行調整。在上述實施形態中,係將偏移量設定為誤差訊號為零的光學配置,但是並非限定於誤差訊號為零時,亦可將偏移量設定為誤差訊號成為基準值的光學配置。In the above-mentioned embodiment, between step S6 and step S7, the bias offset values of the first and second beam shape detection units 55 and 56 are obtained (the first and the first in the state where the beam shape is not detected). 2 beam shape detection units 55, 56). In the above embodiment, the offset is set to the optical arrangement with the error signal being zero, but it is not limited to the optical arrangement where the error signal is zero, and the offset can also be set to the optical arrangement where the error signal is the reference value.

在上述實施形態中,係根據來自上位系統的指令來設定偏移量,但是亦可藉由作業人員的操作來設定偏移量,亦可按照所形成的改質區域7的位置來預先設定偏移量。在上述實施形態中,以成為所被設定的偏移量的方式,藉由控制部250控制成像狀態調整部70,但是亦可藉由作業人員的操作來控制成像狀態調整部70。In the above embodiment, the offset is set in accordance with a command from a higher-level system, but the offset can also be set by the operator's operation, and the offset can be set in advance according to the position of the modified region 7 formed. Shift amount. In the embodiment described above, the imaging state adjustment unit 70 is controlled by the control unit 250 so as to be a set offset amount. However, the imaging state adjustment unit 70 may be controlled by an operator's operation.

上述實施形態係具備有反射型空間光調變器203作為空間光調變器,但是空間光調變器並非限定於反射型者,亦可具備有透過型的空間光調變器。在上述實施形態中,將加工對象物1的背面21設為雷射光入射面,但是,亦可將加工對象物1的表面3設為雷射光入射面。在上述中,控制部250及誤差訊號生成部57係構成訊號取得部。控制部250係構成偏移量設定部、成像狀態控制部及驅動機構控制部。The above-mentioned embodiment is provided with the reflective spatial light modulator 203 as a spatial light modulator, but the spatial light modulator is not limited to a reflective one, and may be provided with a transmissive spatial light modulator. In the embodiment described above, the back surface 21 of the object 1 is set as the laser light incident surface, but the surface 3 of the object 1 may be set as the laser light incident surface. In the above, the control unit 250 and the error signal generation unit 57 constitute a signal acquisition unit. The control section 250 constitutes an offset setting section, an imaging state control section, and a drive mechanism control section.

1‧‧‧加工對象物1‧‧‧ processing object

3‧‧‧表面3‧‧‧ surface

5‧‧‧切斷預定線5‧‧‧ cut off the planned line

7‧‧‧改質區域7‧‧‧ Improved area

8‧‧‧切斷起點區域8‧‧‧ cut off the starting area

21‧‧‧背面21‧‧‧ back

30‧‧‧測定用光源30‧‧‧light source for measurement

31、32‧‧‧SLD光源31, 32‧‧‧SLD light source

33‧‧‧WDM33‧‧‧WDM

34‧‧‧光纖34‧‧‧optical fiber

50‧‧‧位移檢測部50‧‧‧Displacement detection section

51‧‧‧第1分歧部51‧‧‧First Division

52‧‧‧第2分歧部(分歧部)52‧‧‧Second Division (Division)

53‧‧‧第1像散附加部(像散附加部)53‧‧‧The first astigmatism addition unit (astigmatism addition unit)

53a、54a‧‧‧凸透鏡53a, 54a‧‧‧ convex lens

53b、54b‧‧‧柱面透鏡53b, 54b‧‧‧ cylindrical lens

54‧‧‧第2像散附加部(像散附加部)54‧‧‧ 2nd astigmatism addition section (astigmatism addition section)

55‧‧‧第1射束形狀檢測部(射束形狀檢測部)55‧‧‧ 1st beam shape detection unit (beam shape detection unit)

56‧‧‧第2射束形狀檢測部(射束形狀檢測部)56‧‧‧ 2nd beam shape detection unit (beam shape detection unit)

57‧‧‧誤差訊號生成部(訊號取得部)57‧‧‧Error signal generation section (signal acquisition section)

58‧‧‧反射鏡58‧‧‧Mirror

59a、59b‧‧‧過濾器59a, 59b‧‧‧ filters

60‧‧‧調整光學系60‧‧‧Adjust the optics

70‧‧‧成像狀態調整部70‧‧‧ Imaging state adjustment section

71‧‧‧凹透鏡71‧‧‧ concave lens

72‧‧‧凸透鏡72‧‧‧ convex lens

81‧‧‧第1操縱反射鏡(光軸調整機構)81‧‧‧The first operating mirror (optical axis adjustment mechanism)

82‧‧‧第2操縱反射鏡(光軸調整機構)82‧‧‧Second steering mirror (optical axis adjustment mechanism)

100、300‧‧‧雷射加工裝置100, 300‧‧‧laser processing equipment

101‧‧‧雷射光源101‧‧‧laser light source

102‧‧‧雷射光源控制部102‧‧‧Laser light source control unit

103‧‧‧光學系103‧‧‧ Department of Optics

105‧‧‧聚光用透鏡105‧‧‧ condenser lens

107‧‧‧支持台107‧‧‧Support Desk

111‧‧‧載台111‧‧‧ carrier

115‧‧‧載台控制部115‧‧‧ Carrier Control Department

202‧‧‧雷射光源202‧‧‧laser light source

203‧‧‧反射型空間光調變器203‧‧‧Reflective Space Light Modulator

204‧‧‧聚光光學系(聚光用透鏡)204‧‧‧ Condensing optics (condensing lens)

205a、205b‧‧‧反射鏡205a, 205b‧‧‧Mirror

206a、206b‧‧‧反射鏡206a, 206b‧‧‧Mirror

207‧‧‧衰減器207‧‧‧ Attenuator

208‧‧‧反射鏡208‧‧‧Reflector

209‧‧‧半鏡209‧‧‧half mirror

210、238‧‧‧二向分光鏡210, 238‧‧‧ two-way beamsplitters

211‧‧‧表面觀察單元211‧‧‧Surface observation unit

211a‧‧‧觀察用光源211a‧‧‧ Observation light source

211b‧‧‧檢測器211b‧‧‧ Detector

212、212B‧‧‧AF單元212, 212B‧‧‧AF units

213‧‧‧矽基板213‧‧‧Si substrate

214‧‧‧像素電極214‧‧‧pixel electrode

214a‧‧‧表面214a‧‧‧ surface

215‧‧‧反射膜215‧‧‧Reflective film

216‧‧‧液晶層216‧‧‧LCD layer

216a‧‧‧液晶分子216a‧‧‧Liquid crystal molecules

217‧‧‧透明導電膜217‧‧‧Transparent conductive film

218‧‧‧透明基板218‧‧‧Transparent substrate

218a‧‧‧表面218a‧‧‧ surface

219‧‧‧反射鏡219‧‧‧Reflector

228‧‧‧λ/2波長板228‧‧‧λ / 2 wave plate

231‧‧‧框體231‧‧‧Frame

232‧‧‧驅動單元(驅動機構)232‧‧‧Drive unit (drive mechanism)

233‧‧‧底板233‧‧‧ floor

236‧‧‧頂板236‧‧‧Top plate

241‧‧‧4f光學系241‧‧‧4f Optics

241a‧‧‧第1透鏡241a‧‧‧1st lens

241b‧‧‧第2透鏡241b‧‧‧ 2nd lens

250‧‧‧控制部(訊號取得部,偏移量設定部,成像狀態控制部,驅動機構控制部)250‧‧‧control section (signal acquisition section, offset setting section, imaging state control section, drive mechanism control section)

260‧‧‧射束均勻器260‧‧‧ Beam Homogenizer

914‧‧‧驅動電路層914‧‧‧Drive circuit layer

999a、999b‧‧‧配向膜999a, 999b‧‧‧Alignment film

H‧‧‧射束形狀H‧‧‧ Beam shape

L‧‧‧雷射光(加工用雷射光)L‧‧‧laser light (laser light for processing)

LB1‧‧‧測定用光LB1‧‧‧Measurement light

LB2‧‧‧反射光LB2‧‧‧Reflected light

LS1‧‧‧第1分歧反射光(分歧反射光)LS1‧‧‧The first branched reflected light (branched reflected light)

LS2‧‧‧第2分歧反射光(分歧反射光)LS2‧‧‧Second branched reflected light (branched reflected light)

OP‧‧‧光路OP‧‧‧Light Path

OP1‧‧‧第1分歧光路(第1分歧反射光的光路)OP1‧‧‧1st branched light path (light path of 1st branched reflected light)

OP2‧‧‧第2分歧光路(第2分歧反射光的光路)OP2‧‧‧ 2nd branched optical path

P‧‧‧聚光點(聚光位置)P‧‧‧condensing point (condensing position)

SA、SB、SC、SD‧‧‧受光面S A , S B , S C , S D ‧‧‧ light receiving surface

VL1‧‧‧可見光VL1‧‧‧visible light

VL2‧‧‧反射光VL2‧‧‧Reflected light

圖1係改質區域的形成所使用的雷射加工裝置的概略構成圖。   圖2係成為改質區域的形成的對象的加工對象物的平面圖。   圖3係沿著圖2的加工對象物的III-III線的剖面圖。   圖4係雷射加工後的加工對象物的平面圖。   圖5係沿著圖4的加工對象物的V-V線的剖面圖。   圖6係沿著圖4的加工對象物的VI-VI線的剖面圖。   圖7係一實施形態之雷射加工裝置的概略構成圖。   圖8係圖7的雷射加工裝置的反射型空間光調變器的局部剖面圖。   圖9係包含圖7的雷射加工裝置的AF單元的自動對焦控制系的概略構成圖。   圖10(a)係說明反射光的射束形狀為縱長橢圓時的圖。圖10(b)係說明反射光的射束形狀為正圓時的圖。(c)係說明反射光的射束形狀為橫長橢圓時的圖。   圖11係顯示誤差訊號之一例的圖表。   圖12係顯示在圖7的雷射加工裝置所實施的雷射加工方法的流程圖之一例。   圖13係顯示僅根據在第1射束形狀檢測部所檢測到的射束形狀所生成的誤差訊號的圖表。   圖14係顯示在圖7的雷射加工裝置中所生成的誤差訊號的圖表。   圖15係顯示僅根據在第2射束形狀檢測部所檢測到的射束形狀所生成的誤差訊號的圖表。   圖16係變形例之AF單元的概略構成圖。   圖17(a)係用以說明藉由圖16的AF單元所得之效果的圖表,第1射束形狀檢測部為固定時的誤差訊號。圖17(b)係用以說明藉由圖16的AF單元所得之效果的圖表,第1射束形狀檢測部為可動時的誤差訊號。FIG. 1 is a schematic configuration diagram of a laser processing apparatus used for forming a modified region. FIG. 2 is a plan view of a processing object that is a target of formation of a modified region. FIG. 3 is a cross-sectional view taken along the line III-III of the object to be processed in FIG. 2. FIG. 4 is a plan view of a processing object after laser processing. FIG. 5 is a cross-sectional view taken along the line V-V of the object to be processed in FIG. 4. FIG. 6 is a cross-sectional view taken along the line VI-VI of the object to be processed in FIG. 4. FIG. 7 is a schematic configuration diagram of a laser processing apparatus according to an embodiment. FIG. 8 is a partial cross-sectional view of a reflective spatial light modulator of the laser processing apparatus of FIG. 7. FIG. 9 is a schematic configuration diagram of an autofocus control system including an AF unit of the laser processing apparatus of FIG. 7. FIG. 10 (a) is a diagram illustrating a case where the beam shape of the reflected light is a vertically long ellipse. FIG. 10 (b) is a diagram illustrating a case where the beam shape of the reflected light is a perfect circle. (c) is a figure explaining the case where the beam shape of reflected light is a horizontally long ellipse. Figure 11 is a graph showing an example of the error signal. FIG. 12 is an example of a flowchart showing a laser processing method performed by the laser processing apparatus of FIG. 7. FIG. 13 is a graph showing an error signal generated based on only the beam shape detected by the first beam shape detection unit. FIG. 14 is a graph showing error signals generated in the laser processing apparatus of FIG. 7. FIG. 15 is a graph showing an error signal generated based on only the beam shape detected by the second beam shape detection unit. FIG. 16 is a schematic configuration diagram of an AF unit according to a modification. FIG. 17 (a) is a graph for explaining the effect obtained by the AF unit of FIG. 16, and the error signal when the first beam shape detection unit is fixed. FIG. 17 (b) is a graph for explaining the effect obtained by the AF unit of FIG. 16, and the error signal when the first beam shape detecting section is movable.

Claims (8)

一種雷射加工裝置,其係藉由將加工用雷射光聚光在加工對象物,在前述加工對象物形成改質區域的雷射加工裝置,其係具備有:   測定用光源,其係出射測定用光;   聚光用透鏡,其係將前述加工用雷射光及前述測定用光聚光在前述加工對象物;   位移檢測部,其係根據在前述加工對象物的雷射光入射面被反射的前述測定用光的反射光,檢測前述雷射光入射面的位移;及   成像狀態調整部,其係將前述測定用光及前述測定用光的反射光的至少任一者的成像狀態進行移動,   前述位移檢測部係具有:   分歧部,其係將前述測定用光的反射光分歧成複數分歧反射光;   複數像散附加部,其係設在複數前述分歧反射光的光路各個,對複數前述分歧反射光各個,附加互相不同的大小的像散量;   複數射束形狀檢測部,其係被設在複數前述分歧反射光的光路各個,檢測附加有像散的複數前述分歧反射光各個的射束形狀;及   訊號取得部,其係由複數前述分歧反射光的光路之中,選擇對應在前述成像狀態調整部進行調整的前述成像狀態的一個,根據所選擇出的前述分歧反射光的光路中的前述射束形狀檢測部的檢測結果,取得關於前述位移的訊號。A laser processing device is a laser processing device for concentrating laser processing light on a processing object to form a modified region in the processing object. The laser processing device includes: a light source for measurement, which is used for emission measurement A light-condensing lens for condensing the laser light for processing and the light for measurement on the object to be processed; a displacement detecting unit based on the light reflected on the incident surface of the laser light for the object to be processed The reflected light of the measurement light detects the displacement of the incident surface of the laser light; and the imaging state adjustment section moves the imaging state of at least one of the measurement light and the reflected light of the measurement light, and the displacement The detection section includes: (i) a branching section that divides the reflected light of the measurement light into a plurality of branched reflected light; (ii) a complex astigmatism adding section that is provided on each of the optical paths of the plurality of branched reflected light and for the plurality of branched reflected light Each with an astigmatism amount different from each other; a complex beam shape detecting section, which is It is provided in each of the optical paths of the plurality of branched reflected light, and detects a beam shape of each of the plurality of the branched reflected light to which astigmatism is added; and a signal acquisition unit, which is selected from the optical paths of the plurality of the branched reflected light, and corresponds to the aforementioned. One of the imaging states adjusted by the imaging state adjustment unit obtains a signal regarding the displacement based on a detection result of the beam shape detection unit in the optical path of the branched reflected light selected. 如申請專利範圍第1項之雷射加工裝置,其中,前述成像狀態調整部係藉由移動前述成像狀態來調整偏移量,   前述訊號取得部係由複數前述分歧反射光的光路之中,選擇對應在前述成像狀態調整部進行調整的前述偏移量的一個。For example, the laser processing device in the first scope of the patent application, wherein the imaging state adjustment unit adjusts the offset by moving the imaging state, and the signal acquisition unit selects from among the optical paths of the plurality of branched reflected light. Corresponds to one of the shift amounts adjusted by the imaging state adjustment section. 如申請專利範圍第2項之雷射加工裝置,其中,前述分歧部係將前述測定用光的反射光至少分歧成第1分歧反射光及第2分歧反射光,   前述像散附加部係具有:   第1像散附加部,其係被設在前述第1分歧反射光的光路,將第1像散量附加在前述第1分歧反射光;及   第2像散附加部,其係被設在前述第2分歧反射光的光路,將大於前述第1像散量的第2像散量附加在前述第2分歧反射光,   前述訊號取得部係:   若在前述成像狀態調整部進行調整的前述偏移量位於第1範圍,選擇前述第1分歧反射光的光路,   若在前述成像狀態調整部進行調整的前述偏移量位於比前述第1範圍為更深的第2範圍,則選擇前述第2分歧反射光的光路。For example, the laser processing device in the second scope of the patent application, wherein the branching section divides at least the reflected light of the measurement light into a first branched reflected light and a second branched reflected light, and the astigmatic addition section has: The first astigmatism adding section is provided on the optical path of the first branched reflected light, and adds the first astigmatism amount to the first divided reflected light; and the second astigmatism adding section is provided on the aforementioned The optical path of the second branched reflected light is added to the second branched reflected light with a second astigmatism amount greater than the first astigmatism amount. The signal acquisition unit: If the offset is adjusted by the imaging state adjustment unit. The amount is in the first range, and the optical path of the first branched reflected light is selected. If the offset adjusted by the imaging state adjustment section is in a second range that is deeper than the first range, the second branched reflection is selected. Light path of light. 如申請專利範圍第2項或第3項之雷射加工裝置,其中,具備有:   偏移量設定部,其係設定在前述成像狀態調整部進行調整的前述偏移量;及   成像狀態控制部,其係以成為在前述偏移量設定部所設定的前述偏移量的方式,控制前述成像狀態調整部。For example, the laser processing device according to the second or third aspect of the patent application scope includes: (1) an offset setting unit that is set at the aforementioned offset adjusted by the aforementioned imaging state adjustment unit; and an imaging state control unit It controls the imaging state adjustment unit so as to become the offset amount set by the offset amount setting unit. 如申請專利範圍第1項至第4項中任一項之雷射加工裝置,其中,具備有:   驅動機構,其係沿著前述聚光用透鏡的光軸方向,使前述加工對象物及前述聚光用透鏡的至少任一者進行動作;及   驅動機構控制部,其係以在前述訊號取得部所取得的前述訊號維持目標值的方式使前述驅動機構進行動作。For example, the laser processing device according to any one of claims 1 to 4 includes: a drive mechanism for moving the object to be processed and the object along the optical axis direction of the light-condensing lens. At least one of the condenser lenses operates; and a drive mechanism control unit that operates the drive mechanism such that the signal obtained by the signal acquisition unit maintains a target value. 如申請專利範圍第1項至第5項中任一項之雷射加工裝置,其中,具備有:光軸調整機構,其係將前述測定用光的光軸對合在前述加工用雷射光的光軸。For example, the laser processing device according to any one of claims 1 to 5 of the scope of patent application, further comprising: an optical axis adjustment mechanism that aligns the optical axis of the measurement light with the laser light for processing. Optical axis. 如申請專利範圍第1項至第5項中任一項之雷射加工裝置,其中,前述測定用光源係可出射具有彼此不同的波長的複數光的任一者,出射複數波長的光之中具有對前述加工對象物的反射率為最高的波長的光,作為前述測定用光。For example, the laser processing device according to any one of claims 1 to 5, wherein the light source for measurement can emit any one of a plurality of light having different wavelengths from each other and emit light among a plurality of wavelengths. Light having a wavelength with the highest reflectance to the object to be processed is used as the measurement light. 一種雷射加工方法,其係藉由將加工用雷射光聚光在加工對象物,在前述加工對象物形成改質區域的雷射加工方法,其具備有:   雷射加工步驟,其係一邊將前述加工用雷射光以聚光用透鏡聚光在前述加工對象物,一邊將測定用光以前述聚光用透鏡聚光在前述加工對象物,將在前述加工對象物的雷射光入射面被反射的該測定用光的反射光,至少分歧成第1分歧反射光及第2分歧反射光,檢測在前述第1分歧反射光的光路附加有第1像散量的前述第1分歧反射光的射束形狀,並且檢測在前述第2分歧反射光的光路附加有大於前述第1像散量的第2像散量的前述第2分歧反射光的射束形狀,根據該射束形狀的檢測結果,取得關於前述雷射光入射面的位移的訊號,以所取得的前述訊號維持目標值的方式,沿著前述聚光用透鏡的光軸方向,使前述加工對象物及前述聚光用透鏡的至少任一者進行動作,   前述雷射加工步驟係包含:   第1步驟,其係設定偏移量;   第2步驟,其係若在前述第1步驟所設定的前述偏移量為第1範圍,選擇前述第1分歧反射光的光路,若在前述第1步驟所設定的前述偏移量為比前述第1範圍為更深的第2範圍,則選擇前述第2分歧反射光的光路;   第3步驟,其係以成為在前述第1步驟所設定的前述偏移量的方式,將前述測定用光及前述測定用光的反射光的至少任一者的成像狀態進行移動;   第4步驟,其係以成為在前述第1步驟所設定的前述偏移量的方式,使前述加工對象物及前述聚光用透鏡的至少任一者進行動作;   第5步驟,其係在前述第3步驟及前述第4步驟之後,取得前述目標值;及   第6步驟,其係在前述第5步驟之後,一邊將前述加工用雷射光以聚光用透鏡聚光在前述加工對象物,一邊在前述第2步驟中所選擇出的前述分歧反射光的光路檢測前述射束形狀,根據該射束形狀的檢測結果,取得前述訊號,以所取得的前述訊號維持前述目標值的方式,沿著前述聚光用透鏡的光軸方向,使前述加工對象物及前述聚光用透鏡的至少任一者進行動作。A laser processing method is a laser processing method for concentrating laser processing light on a processing object to form a modified region in the processing object. The laser processing method includes: (1) a laser processing step, The processing laser light is focused on the processing object by a focusing lens, while the measurement light is focused on the processing object by the focusing lens, and the laser light incident surface of the processing object is reflected. The reflected light of the measurement light is branched into at least a first branched reflected light and a second branched reflected light, and the emission of the first branched reflected light with a first astigmatism amount added to the optical path of the first branched reflected light is detected. A beam shape, and a beam shape of the second divergent reflected light having a second astigmatism amount greater than the first astigmatism amount added to the optical path of the second divergent reflected light, and based on a detection result of the beam shape, Obtaining a signal about the displacement of the incident surface of the laser light, and maintaining the target value of the obtained signal, along the optical axis direction of the focusing lens, the processing object and the At least one of the optical lenses is operated. The above laser processing step includes: the first step, which sets an offset; the second step, where the above-mentioned offset set in the first step is In the first range, the optical path of the first branched reflected light is selected. If the offset amount set in the first step is a second range deeper than the first range, the optical path of the second branched reflected light is selected. The third step is to move the imaging state of at least one of the measurement light and the reflected light of the measurement light so as to become the offset amount set in the first step; The fourth step The step is to operate at least one of the object to be processed and the light-condensing lens so as to become the offset amount set in the first step; The fifth step is the third step. After the step and the fourth step, the target value is obtained; and in the sixth step, after the fifth step, the processing laser light is condensed by a condenser lens The processing object detects the beam shape on the optical path of the branched reflected light selected in the second step, obtains the signal based on the detection result of the beam shape, and maintains the target with the obtained signal. In the form of a value, at least one of the object to be processed and the light-condensing lens is operated along the optical axis direction of the light-condensing lens.
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