CN101065694A - Single axis light pipe for homogenizing one axis of illumination system based on laser diodes - Google Patents
Single axis light pipe for homogenizing one axis of illumination system based on laser diodes Download PDFInfo
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- CN101065694A CN101065694A CN 200580040287 CN200580040287A CN101065694A CN 101065694 A CN101065694 A CN 101065694A CN 200580040287 CN200580040287 CN 200580040287 CN 200580040287 A CN200580040287 A CN 200580040287A CN 101065694 A CN101065694 A CN 101065694A
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- 238000005286 illumination Methods 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 241000931526 Acer campestre Species 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 23
- 238000003475 lamination Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 6
- 230000016507 interphase Effects 0.000 description 5
- 238000007669 thermal treatment Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Abstract
Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a. pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
Description
The application requires the U.S. Provisional Application No.60/627 that submitted on November 12nd, 2004,238 right of priority.
Technical field
The present invention relates generally to the thermal treatment of Semiconductor substrate.More specifically, the present invention relates to the LASER HEAT TREATMENT of Semiconductor substrate.
Background technology
Manufacturing in silicon and other SIC (semiconductor integrated circuit) of forming on Silicon Wafer or other substrate such as the glass substrate that is used for showing needs thermal treatment.Desired temperature can less than 250 ℃ relatively low temperature to greater than 1000 ℃, 1200 ℃ or even 1400 ℃ scope in, and can be used for such as in doping implantation annealing, crystallization, oxidation, nitrogenize, silication and chemical vapor deposition and other the various technologies.
For the desired very narrow circuit feature of advanced person's integrated circuit, be starved of minimizing and require overall thermal budget in the thermal treatment realizing.This heat budget can think at high temperature to obtain the necessary All Time of desired treatment temp.This time that wafer need rest under the maximum temperature can be very short.
Rapid thermal treatment (RTP) uses the irradiation light that can open and close very apace only to heat wafer and the remainder of heated chamber not.The pulsed modulation laser annealing of laser pulse of using very short (approximately 20ns) at area of heating surface layer only but not below comparatively effective during wafer, therefore allow very short elevation rate.
The application number of being submitted to by people such as Jennings based on submitting on Dec 18th, 2002 is No.10/325, the PCT/2003/00196966 of 497 U.S. Patent application has described the method for researching and developing with various forms recently, be sometimes referred to as heat flux laser annealing or dynamic surface annealing (DSA), this application is incorporated herein its full content as a reference.Markle has described different forms at No.6 in 531,681 the United States Patent (USP).Talwar has described another program at No.6 in 747,245 the United States Patent (USP).
Jennings and Markle scheme adopt the CW diode laser to generate very strong light beam, and it is with elongate radiation line irradiation wafer.Then, this line is along the whole crystal column surface of scanning direction perpendicular to the long size of wire harness.
Summary of the invention
The invention provides a kind of device that is used to handle semiconductor crystal wafer, comprising: be arranged on the semiconductor laser transmitter array on a plurality of parallel row that extends along slow axis; A plurality of independent cylindrical lens, it is arranged on separately on one of them of described row of generating laser, and is used for along vertical with described slow axis usually fast axis collimation from described respectively voluntarily light; The photoconductive tube of homogenising, it has and is used for receiving by the input face of the light of described a plurality of cylindrical lens collimations and the output face that is positioned at the opposite end at first end, and described photoconductive tube comprises a pair of reflecting surface that extends and be separated from each other along the direction of described slow axis between described input face and output face; And scanister, it is used for making that emission scans described wafer from the light of described homogenising photoconductive tube on the direction of scanning parallel with described fast axle.Be used for to be focused to the lens of straight line light at described wafer from the light that the output face of described photoconductive tube is derived, described straight line light has long limit and has narrower size along described fast axle along described slow axis, and wherein said scanister scans described wafer with described straight line light along described fast axle.The reflecting wall of photoconductive tube is each other enough near producing repeatedly reflection so that stride slow axis.
Description of drawings
Fig. 1 is the orthograph of the thermoflux laser anneal device that uses in the present invention;
Fig. 2 and Fig. 3 are that the optical element of device of Fig. 1 is from the orthograph of different view;
Fig. 4 is the end plane figure of a part of semiconductor laser array of the device of Fig. 1;
Fig. 5 is the orthograph of homogenising photoconductive tube that is used for the device of Fig. 1;
Fig. 6 is the skeleton view of the lens subassembly at the photoconductive tube of Fig. 5 and input and output face place thereof;
Fig. 7 is the vertical view of the photoconductive tube of Fig. 6 along fast axle;
Fig. 8 is the side view of the photoconductive tube of Fig. 6 along slow axis;
Fig. 9 is the orthograph of embodiment of the photoconductive tube of Fig. 5, and wherein this photoconductive tube forms the wedge shape of blocking with the cross-sectional area that reduces gradually along optical axis;
Figure 10 is the orthograph of embodiment of the photoconductive tube of Fig. 5, and wherein this photoconductive tube forms the wedge shape of blocking with the cross-sectional area that increases gradually along optical axis;
Figure 11 is the synoptic diagram that repeatedly reflects in the photoconductive tube of Figure 10, wherein shows the effect at the beam splitting lens of photoconductive tube input.
Embodiment
In Fig. 1, show an embodiment of the device described in the application of the above-mentioned reference of submitting to by people such as Jennings with schematic orthograph.The rail structure (gantrystructure) 10 of striding that is used for bidimensional scanning comprises a pair of fixing parallel orbit 12 and 14.Two parallel, and to stride beam-and- rails 16 and 18 separately fixing and be supported on fixing track 12 and 14 with the distance of setting, and by not shown motor and driving mechanisms control on roller bearing or ball bearing, to slide along trapped orbit 12 and 14.Light beam source 20 slidably is supported on strides on beam-and- rail 16 and 18, and can be suspended on striding under beam-and- rail 16 and 18 to slide along them by not shown motor and driving mechanisms control.Silicon Wafer 22 or other substrate static state are supported on the below of striding rail structure 10.Light beam source 20 comprises lasing light emitter and the fan beam 24 of optical element to produce downward orientation, and this light beam 24 is to shine these wafers 22 as the wire harness 26 that are parallel to trapped orbit 12 and 14 extensions usually, and wherein this direction abbreviates slow direction as.Though it is not shown at this, but stride the rail structure and also comprise the Z-pillow block, it is used for mobile lasing light emitter and optical element on usually parallel with fladellum 24 direction, thereby controllably changes the distance between light beam source 20 and the wafer 22, and so controls the focusing of wire harness 26 on wafer 22.The exemplary size of wire harness 26 comprises 1 centimetre length and 66 microns width, and has the exemplary power density of 220kw/cm2.Alternatively, this light beam source and relevant optical can be fixed, and with wafer support can be on the platform that scans on the two-dimensional direction.
In common operation, stride beam-and- rail 16 and 18 and be set on the ad-hoc location along trapped orbit 12 and 14, and light beam source 20 with at the uniform velocity along striding that beam-and-rail 16 moves with 18 so that wire harness 26 with its vertically vertical direction that is commonly referred to fast direction on scan.Thereby wire harness 26 scans 1 centimetre the scanning strip (swath) of opposite side with irradiation wafer 22 from a side of wafer 22.Wire harness 26 is enough narrow and sweep velocity on fast direction is enough fast, thus only with the Wafer exposure of particular area under the rayed of wire harness 26 but the intensity of the peak value of wire harness enough is heated to surf zone very high temperature.Yet the darker part of wafer 22 does not significantly heat and is further used as heat sink (heat sink) to cool off this surf zone apace.In case scanning is finished fast, stride beam-and- rail 16 and 18 and move new position, thereby make wire harness 26 on the long dimensional directions of slow axis extension, move along trapped orbit 12 and 14.Subsequently, scan fast to shine the adjacent scanning strip of wafer 22.Can repeat fast slow scanning alternately along the serpentine track of electron gun 20 and finish thermal treatment up to whole wafer 22.
Get back to Fig. 2 and Fig. 3, two row cylindrical lenticule (lenslets) 40 along laser strip 34 location with along fast axle with laser alignment in arrow beam of light.They can use adhesives aiming on laser laminated 32 and with bar 34 to extend on emitting area 36.
First group of staggered light beam sees through quarter-wave plate 48 to rotate its polarization with respect to second group of staggered light beam.Two groups of staggered light beams are input to the polarization multiplexer (PMUX) 52 with dual-polarization beam splitter configuration.This PMUX can buy from Research Electro Optics.The first diagonal angle interphase 54 and the second diagonal angle interphase 56 cause two groups of staggered light beams along the common axis reflection from their fronts.Usually first interphase 54 is implemented as being designed to hard reverberator (hardreflector) dielectric interference filter (HR), and second interphase 56 is implemented as the dielectric interference filter of the polarization beam splitter that is designed to laser wavelength (PBS).As a result, reflection is from the back side of first group of staggered light beam irradiates second boundary surface layer 56 of the first boundary surface layer 54.Because by the polarization rotation that quarter-wave plate 48 is introduced, first group of staggered light beam sees through the second boundary surface layer 56.Intensity by the source beam 58 of PMUX52 output is any one twice in two groups of staggered light beams.
Though separately illustrate in the accompanying drawing, but interleaver 42, quarter-wave plate 48 and PMUX52 with and interface 54,56, and the wave filter on additional be adhered to input and output surface is usually by curable epoxy material plastic seal agent is bonded together such as UV, so that rigid optical system to be provided.Important interphase is the plastic bonding face of lenticule 40 and laser laminated 32, and they must be aimed at bar 34 on this face.Source beam 58 sees through one group of cylindrical lens 62,64,66, to focus on this source beam 58 along slow axis.
The photoconductive tube 70 of one dimension makes the source beam homogenising along slow axis.The source beam that is focused on by cylindrical lens 62,64,66 is with the limited convergent angle along slow axis, and enters photoconductive tube 70 basically collimatedly along fast axle.As what more be shown clearly in the orthograph of Fig. 5, photoconductive tube 70 is as the beam arrangement along slow axis of beam homogenizer to reduce to be introduced by a plurality of transmitters 36 that are spaced apart on slow axis in the bar lamination 32.Photoconductive tube 70 can be embodied as and has the rectangular slab of sufficiently high refractive index with the optical glass that produces total internal reflection.It has minor face and has long limit along fast axle along slow axis.Plate 72 extends a segment distance along the axle 74 of source beam 58, and this source beam converges on the input face 76 along slow axis.The end face of source beam 58 slave plates 72 and bottom surface internal reflection repeatedly, thereby eliminated along a large amount of texture of slow axis and when light beam when output face 78 is penetrated, make light beam along the slow axis homogenising.Yet source beam 58 collimate well along fast axle (by cylindrical lenticule 40), and plate 72 is enough wide, thus make source beam 58 can be on the side surface of plate 72 internal reflection and keep its collimation along fast.Photoconductive tube 70 can be along its axially attenuation gradually, with the convergence of control input aperture and outgoing aperture and light beam with disperse.Alternatively, this one dimension photoconductive tube can be embodied as usually two parallel reflecting surfaces that upper and lower surface and source beam between corresponding to plate 72 pass through.
Source beam by photoconductive tube 70 outputs is normally uniform.Further illustrate as the synoptic diagram of Fig. 6, comprise that the extra anamorphote group of cylindrical lens 81 and 82 or optical devices 80 have amplified the output beam on the slow axis, and comprise that also spherical lens 83 is to project required wire harness 26 on the wafer 22 usually.Anamorphic optical device 80 is carried out shaping to produce the narrow wire harness of finite length to source beam on bidimensional.On quick shaft direction, the output optical devices have the infinite conjugation (though system can be designed to have limited light source conjugation) in output place of photoconductive tube and have the finite conjugate of locating on the picture plane of wafer 22 for light source, and on slow-axis direction, the output optical devices have at the finite conjugate of output place of photoconductive tube 70 for light source and have the finite conjugate that the picture plane is located.And, on slow-axis direction, can pass through photoconductive tube 70 homogenising from the irradiation heterogeneous of a plurality of laser diodes of laser stripes.The homogenising ability of photoconductive tube 70 depends critically upon the number of times of light reflection by photoconductive tube 70.This number of times is determined by the size in direction (if any), input aperture and the outgoing aperture of the length of photoconductive tube 70, attenuation gradually and the emission angle that enters photoconductive tube 70.Output optical devices 80 are focused to source beam the wire harness of wafer 22 lip-deep required sizes.
Fig. 7 and Fig. 8 are respectively along fast axle and the vertically disposed side view of slow axis, wherein show photoconductive tube 70 and some associated optical devices.On quick shaft direction, collimate and can not be subjected to the influence of photoconductive tube 70 or anamorphic optical device well from the light beam of laser stripes 32.On the other hand, on slow-axis direction, the anamorphic optical device 62,64 of input and 66 is assembled light beam and converge to the input end of photoconductive tube 70.Have that uniformly intensity but this light beam with a definite divergence penetrate from photoconductive tube 70 basically along slow axis.Output skew optical devices 80 are along the slow axis amplification and collimate this output beam.
Above-mentioned photoconductive tube 70 has the uniform rectangular cross section along optical axis 74.Yet having the tapered profiles that diminishes gradually along optical axis 74 xsects can preferably be used in combination with other optical devices.Particularly, the photoconductive tube of taper has increased the number of times that reflection takes place on the photoconductive tube of regular length.Dielectric photoconductive tube 90 shown in orthogonal projection among Fig. 9 is formed by the wedge shape of blocking 92 of the optical glass that has along optical axis 74 from input face 94 rectangular cross sections that evenly reduce to output face 96.That is, the depth-width ratio of photoconductive tube 90 increases continuously, and for example from 5: 1 to 10: 1, thereby generation for example is at least 2 depth-width ratio ratio.Particularly, reduce and keep constant along the size of slow axis along the size of fast axle.The advantage of narrow output face 96 is that its numerical aperture (NA) is higher, and also, dispersing of output beam is bigger.
Complementary structure is the dielectric photoconductive tube 100 shown in the orthogonal projection in Figure 10, its wedge shape of blocking 102 by the optical glass that has along optical axis from input face 104 rectangular cross sections that evenly increase to output face 106 forms, thereby the depth-width ratio of wedge shape 102 reduces continuously, for example with the antipodal ratio of aforementioned embodiments.Particularly, increase and keep constant along the size of slow axis along the size of fast axle.The advantage of this structure is that dispersing of the less and output beam of the NA of wide output face 106 is less.The input beam 112 that the cylindrical lens 108 that preferably is placed near the of input face and extends along the length horizontal direction of photoconductive tube 100 will collimate a little sharply is focused to convergent beam at input face 104 places.Shown in the side cross-sectional, view of Figure 11, the lateral beam component 114 at place, slow direction end reflects many times near the smaller end of tapered light pipe 100 and moves closer in parallel with optical axis.As a result, output beam has less NA and along the relatively large size of slow axis.
Should be appreciated that dielectric photoconductive tube 70,90 and 100 lateral sidewalls really do not participate in the effect of photoconductive tube, thus can obtain the length of this conduit can not obtain in a lateral direction reflect or the single axis light pipe of homogenising.Therefore, and do not require that these transverse walls are parallel, though these parallel walls are made easily.
The photoconductive tube of one dimension also can be selected to be embodied as usually two reflecting surfaces parallel or that tilt a little corresponding to plate 72 or wedge shape 92 and 102 upper and lower surface, and the source beam between passes through.This reflecting surface can form the minute surface of self-support or the coating of total internal reflection can not be provided on transparent component.Also can not use in interleaver 42 or the polarization multiplexer 52 any or both all not to use and implement the present invention.
Though describe the present invention by concrete in detail with reference to preferred implementation, should be appreciated that and under the situation that does not depart from true spirit of the present invention and scope, can make its distortion and modification.
Claims (20)
1. heat treatment system comprises:
Laser emitting source, it sends the light of optical maser wavelength and comprises a plurality of laser diodes that are formed on the substrate, and from launching along optical axis along the emitter region of first setting; And
Single axis light pipe, it has along described first reflecting wall that separates with respect to described optical axis, and wherein said optical axis passes through between described reflecting wall.
2. system according to claim 1, it is characterized in that, also comprise at least one anamorphote, it is positioned at the described emitter region top of described laser diode, and along described first extension with basically along with the radiation of described first second vertical collimation from described laser diode.
3. system according to claim 2 is characterized in that, described photoconductive tube is not with respect to described second described radiation of reflection.
4. system according to claim 2 is characterized in that, described second of described first slow axis for the wire harness scanister is its fast axle.
5. system according to claim 1 is characterized in that, described photoconductive tube forms along described first taper that reduces gradually.
6. device according to claim 5 is characterized in that, described photoconductive tube has the taper that increases gradually along the described optical axis from described light source.
7. device according to claim 5 is characterized in that, described photoconductive tube has the taper that reduces gradually along the described optical axis from described light source.
8. device according to claim 4 is characterized in that, also comprises scanister, and it is used for producing relatively moving along described fast axle between described optical axis and workpiece.
9. device according to claim 1 is characterized in that described reflecting wall separates each other with the distance of striding described first enough weak points, strides described first repeatedly reflection thereby provide from the light of described laser emitting source between described reflecting wall.
10. device according to claim 9, it is characterized in that, also comprise the supporting walls that a pair of and described reflecting wall connects, described supporting walls separates each other to stride described second enough big distance, thereby prevents to stride between described supporting walls described second reflection.
11. device according to claim 10 is characterized in that, also comprises each cylindrical lens that extends axially and be arranged on the described emitter region of each row along described first, it is used for along the light of described second collimation from described lasing light emitter.
12. device according to claim 9 is characterized in that, described photoconductive tube forms has the taper that increases gradually along the interval of described optical axis described reflecting surface from the input face of described photoconductive tube to output face.
13. device according to claim 9 is characterized in that, described photoconductive tube forms has the taper that reduces gradually along the interval of described optical axis described reflecting surface from the input face of described photoconductive tube to output face.
14. a device that is used to handle semiconductor crystal wafer comprises:
The semiconductor laser transmitter array, it is arranged on a plurality of parallel row of slow axis extension;
A plurality of independent cylindrical lens, it is arranged on described row independent on one of them of generating laser, and is used for along vertical with described slow axis usually fast axis collimation from described respectively voluntarily light;
The photoconductive tube of homogenising, it has and is used for receiving by the input face of the light of described a plurality of cylindrical lens collimations and the output face that is positioned at the opposite end at first end, and described photoconductive tube comprises a pair of reflecting surface that extends and be separated from each other along the direction of described slow axis between described input face and output face; And
Scanister, it is used for making that emission scans described wafer from the light of described homogenising photoconductive tube on the direction of scanning parallel with described fast axle.
15. device according to claim 14, it is characterized in that, also comprise optical devices, its light that is used for deriving from the output face of described photoconductive tube is focused to straight line light at described wafer, described straight line light has long limit and has narrower size along described fast axle along described slow axis, and wherein said scanister scans described wafer with described straight line light along described fast axle.
16. device according to claim 14 is characterized in that, described reflecting surface is each other enough near producing repeatedly reflection so that stride described slow axis.
17. device according to claim 16, it is characterized in that, also comprise the supporting walls that a pair of and described reflecting wall connects, described supporting walls separates each other with enough big distance along the direction of described fast axle, to prevent to stride the reflection of described fast axle between described supporting walls.
18. device according to claim 14 is characterized in that, described reflecting surface is defined as the wedge-type shape that blocks, and described device also comprises the lens of the described input face that is positioned at described photoconductive tube, and these lens are used to increase the beam divergence along described slow axis.
19. device according to claim 18 is characterized in that, the described wedge-type shape that blocks has the cross-sectional area that reduces gradually along the direction of light propagation.
20. the method that workpiece is annealed comprises:
Launch a plurality of light beams from the semiconductor laser transmitter array that is arranged on a plurality of parallel row that extends along slow axis;
Along usually vertical with described slow axis fast axle, collimation is from respectively voluntarily light beam of generating laser in cylindrical lens separately, and wherein cylindrical lens is arranged on separately on one of them of described row of generating laser separately;
Make that striding described slow axis between light from the described a plurality of cylindrical lens a pair of reflecting surface that is separated from each other along described slow-axis direction in photoconductive tube repeatedly reflects, thereby produce light beam along described slow axis homogenising;
The light beam of described homogenising is focused to straight line light on described workpiece, described straight line light has the size of broad and has narrower size along described fast axle along described slow axis; And
The described straight line light of scanning on the direction of scanning parallel, whole described workpiece upper edge with described fast axle.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62723804P | 2004-11-12 | 2004-11-12 | |
| US60/627,238 | 2004-11-12 | ||
| US11/185,649 | 2005-07-20 |
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| Publication Number | Publication Date |
|---|---|
| CN101065694A true CN101065694A (en) | 2007-10-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200580040287 Pending CN101065694A (en) | 2004-11-12 | 2005-10-12 | Single axis light pipe for homogenizing one axis of illumination system based on laser diodes |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105158913A (en) * | 2013-05-13 | 2015-12-16 | 深圳市绎立锐光科技开发有限公司 | Laser source, wavelength conversion light source, light-combining light source, and projection system |
| CN106886086A (en) * | 2008-10-27 | 2017-06-23 | 通快光子学公司 | Laser beam interleaving |
| CN106941240A (en) * | 2017-05-18 | 2017-07-11 | 温州泛波激光有限公司 | Semiconductor laser |
| CN110337708A (en) * | 2016-12-16 | 2019-10-15 | 株式会社Sumitec | Laser processing device and laser processing |
| CN112864792A (en) * | 2021-01-08 | 2021-05-28 | 西安炬光科技股份有限公司 | Semiconductor laser module and optical system |
| CN113493737A (en) * | 2020-04-02 | 2021-10-12 | 台达电子国际（新加坡）私人有限公司 | Heat cycle system |
| CN114485476A (en) * | 2022-03-03 | 2022-05-13 | 华侨大学 | Wafer measuring equipment, system and method |
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2005
- 2005-10-12 CN CN 200580040287 patent/CN101065694A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106886086B (en) * | 2008-10-27 | 2021-06-04 | 通快光子学公司 | Laser beam interleaving |
| CN106886086A (en) * | 2008-10-27 | 2017-06-23 | 通快光子学公司 | Laser beam interleaving |
| CN105158913B (en) * | 2013-05-13 | 2019-06-21 | 深圳光峰科技股份有限公司 | Laser light source, wavelength convert light source, light combination light source and optical projection system |
| CN105158913A (en) * | 2013-05-13 | 2015-12-16 | 深圳市绎立锐光科技开发有限公司 | Laser source, wavelength conversion light source, light-combining light source, and projection system |
| CN110337708A (en) * | 2016-12-16 | 2019-10-15 | 株式会社Sumitec | Laser processing device and laser processing |
| CN110337708B (en) * | 2016-12-16 | 2022-11-18 | 日商斯米特克股份有限公司 | Laser processing device and laser processing method |
| CN106941240A (en) * | 2017-05-18 | 2017-07-11 | 温州泛波激光有限公司 | Semiconductor laser |
| CN106941240B (en) * | 2017-05-18 | 2023-07-21 | 温州泛波激光有限公司 | Semiconductor laser |
| CN113493737A (en) * | 2020-04-02 | 2021-10-12 | 台达电子国际（新加坡）私人有限公司 | Heat cycle system |
| CN113493737B (en) * | 2020-04-02 | 2024-05-24 | 台达电子国际（新加坡）私人有限公司 | Thermal circulation system |
| CN112864792A (en) * | 2021-01-08 | 2021-05-28 | 西安炬光科技股份有限公司 | Semiconductor laser module and optical system |
| CN114485476A (en) * | 2022-03-03 | 2022-05-13 | 华侨大学 | Wafer measuring equipment, system and method |
| CN114485476B (en) * | 2022-03-03 | 2024-03-15 | 华侨大学 | Wafer measurement equipment, system and method |
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