TW201835989A - Nitride semiconductor laser element and method for manufacturing same - Google Patents

Abstract

Disclosed is a method for manufacturing a nitride semiconductor laser element, the method enabling stabilization of chip shape, thereby achieving an increase in yield. The method for manufacturing a nitride semiconductor laser element (10) in which nitride semiconductor layers (12) including a light emitting layer having a resonator end face are stacked on a nitride semiconductor substrate (11) comprises: a step for preparing a wafer (20) in which the nitride semiconductor layers (12) are stacked on the nitride semiconductor substrate (11); and a step for forming, on the nitride semiconductor layer (12), a first divided guide groove (22) including a plurality of point-like portions discretely arranged along a first direction in which a face that is to become a resonator end face by cleavage extends. Each of the plurality of point-like portions has a shape which, with respect to the width in a second direction orthogonal to the first direction, is narrower on the front end side than on the rear end side, wherein the front end side of one point-like portion is positioned opposite the rear end side of another point-like portion adjacent to the one point-like portion.

Description

Nitride semiconductor laser element and method of manufacturing same

The present invention relates to a nitride semiconductor laser element and a method of fabricating the same.

Heretofore, a blue-based nitride semiconductor laser element having a structure in which a group III nitride semiconductor layer is grown on a GaN substrate is known. The nitride semiconductor laser device includes an n-type cladding layer (lower cladding layer), an n-type guiding layer (lower guiding layer), an active layer of a multi-quantum well structure, and a p-type guiding layer from the GaN substrate side. (upper guide layer) and p-type cover layer (upper cover layer). The wavelength of the illumination is adjusted by the composition of the quantum well layer. A substrate made of a group III nitride semiconductor such as a GaN substrate is less cleaved than a GaAs substrate which has been conventionally applied to a light-emitting diode and a laser diode. Therefore, in the process of dividing the wafer into individual wafers, the division position is deviated from the predetermined division line, and the wafer shape is not stable.

Therefore, Patent Document 1 discloses a method of dividing a wafer to obtain individual laser elements in accordance with the following steps. In the method described in Patent Document 1, a wafer in which an n-type semiconductor layer including an AlGaN layer, a light-emitting layer containing In, and a p-type semiconductor layer are sequentially laminated on a group III nitride semiconductor substrate is used. Etching is selectively applied from the p-type semiconductor layer side along a predetermined dividing line to form an etching trench that exposes the AlGaN layer along a predetermined dividing line. Further, a divided guiding groove along a predetermined dividing line is formed in the exposed AlGaN layer. Then, individual wafers are obtained by dividing the wafer along the dividing guide groove. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-81428

[Problems to be solved by the invention]

However, according to the method described in Patent Document 1, it is difficult to accurately divide the individual dividing elements in accordance with the predetermined dividing line, the dividing position is deviated from the predetermined dividing line, and the wafer shape is unstable, and the yield is lowered. Accordingly, an object of the present invention is to provide a method for producing a nitride semiconductor laser device which can stabilize a wafer shape and improve yield. [Means to solve the problem]

In order to solve the above problems, in the same manner as in the method of manufacturing a nitride semiconductor laser device of the present invention, a nitride semiconductor layer including a light-emitting layer having a resonator end face is laminated on a nitride semiconductor substrate. A method of manufacturing a semiconductor laser device, comprising: preparing a wafer substrate on which the nitride semiconductor layer is laminated on the nitride semiconductor substrate; and forming the inclusion on the nitride semiconductor layer of the wafer substrate a first split guide groove in which a plurality of dot portions are discretely arranged in a first direction in which the surface of the resonator end face is split, and the plurality of dot portions are orthogonal to the first direction The width in the second direction has a shape in which the distal end side is narrower than the rear end side, and the distal end side of the point portion is disposed to face the rear end side of the other point portion adjacent to the point portion.

As described above, in the production of the nitride semiconductor laser device, a plurality of dot portions having a narrow shape on the front end side and the rear end side are formed on the nitride semiconductor layer of the wafer substrate discretely along the cleaving direction, that is, the first direction. The first split guide groove of the configuration. Then, the plurality of dot-shaped portions constituting the first divided guide groove are one end portion (front end portion) having a narrower width of the dot-shaped portion, and other dot-like portions adjacent to the dot-shaped portion in the first direction The end portion (rear end portion) having a wider width is formed to face each other. Thereby, when the wafer substrate is cleaved, the end portion which is narrower in the width of the dot portion is used as a starting point, and the split is regularly performed. Assuming that the traveling line of the splitting is curved, the traveling line that is split in the end portion of the wide portion formed at the other point portion opposite to the splitting direction also corrects the orbit, and as a result, the overall splitting of the orbit will be Become more straight. Therefore, the shape of the wafer when the wafer substrate is sliced can be stabilized.

Further, in the method of manufacturing a nitride semiconductor laser device, the method further includes: following the first divided guide groove, from the front end side of the dot portion toward the other dot shape adjacent to the dot portion The rear end side of the portion splits the wafer substrate to form a surface as the surface of the resonator end face. In this manner, by dividing the wafer substrate by splitting in accordance with the first divided guide groove, it is possible to form a flat end face of the resonator which ensures high reflectance.

Furthermore, in the above-described method of manufacturing a nitride semiconductor laser device, the dot-shaped portion may have a shape that gradually narrows in width from the rear end side toward the front end side with respect to the width in the second direction. At this time, the foremost end portion of the dot portion can be surely used as the starting point of the splitting. Since it is possible to prevent the cleaving traveling line from being bent from the middle of the dot portion, the division along the predetermined cleavage line can be performed.

Further, in the method of manufacturing a nitride semiconductor laser device described above, the dot portion may have a shape in which the tip end side is sharp. At this time, one of the front end portions of the dot portion can be used as the starting point of the splitting. Therefore, if the front end position of the dot portion is disposed on the predetermined cleavage line, the wafer substrate can be straightly divided in accordance with the predetermined cleavage line. Further, in the method of manufacturing a nitride semiconductor laser device, the dot portion has a depth in a direction orthogonal to the first direction and the second direction, and at least a portion thereof has a front side from the rear end side The shape of the front end side gradually becomes shallower. At this time, the foremost end portion of the dot portion can be more surely used as the starting point of the splitting.

Further, in the above-described method of manufacturing a nitride semiconductor laser device, in the process of forming the first divided guide groove, the first divided guide groove may be formed by laser processing. Moreover, in the above-described method of manufacturing a nitride semiconductor laser device, the first divided guiding groove may be formed by dry etching in the process of forming the first divided guiding groove. In either case, the first divided guide groove can be easily and appropriately formed. When the first divided guide groove is formed by laser processing, the depth of the dot portion can be gradually made shallower from the rear end side toward the front end side. At this time, the foremost end portion of the dot portion can be more surely used as the starting point of the splitting. On the other hand, when the first divided guide groove is formed by dry etching, the dot portion can be easily formed into an arbitrary shape, and the degree of freedom of the shape of the dot portion is high.

Further, in the above-described method of manufacturing a nitride semiconductor laser device, in the process of forming the first divided guide trench, the first split is formed above the optical waveguide constituting the resonator The aforementioned dot portion of the guiding groove may also be used. At this time, the dot portion can be formed at a position that does not affect the light emission of the laser light. Further, in the method for fabricating a nitride semiconductor laser device described above, a process of forming a plurality of optical waveguides disposed adjacent to the first direction with respect to the nitride semiconductor layer is provided; and the first divided guide groove is formed In the above-described first division guide groove, the distance between the point portions adjacent to each other in the first direction is equal to or smaller than the distance between the optical waveguides adjacent to the first direction. The aforementioned dot portion may also be used. That is, a plurality of dot portions may be formed at a narrower interval than the width of the sliced wafer. At this time, in all the components that are sliced, the shape of the wafer can be stabilized, and the yield can be improved.

Furthermore, the method for fabricating a nitride semiconductor laser device according to the present invention may further include: forming a second divided guiding trench along the second direction on the nitride semiconductor layer; and following the second dividing guide The trenching is used to divide the wafer substrate. By dividing the wafer substrate in accordance with the second division guide groove, it is possible to manufacture a nitride semiconductor laser element having a wafer width equal to the distance between the first division guide grooves in the first direction.

Further, in the same manner as the nitride semiconductor laser device of the present invention, on the nitride semiconductor substrate, a nitride including a light-emitting layer having a resonator end face extending in the first direction formed by splitting is formed. a nitride semiconductor laser device formed of a semiconductor layer, wherein a width of a second direction orthogonal to the first direction is formed in a portion of a side of the nitride semiconductor layer extending in the first direction A recess different from one end side and the other end side in one direction. The nitride semiconductor layer extends on the side in the first direction and corresponds to the upper side of the end face of the resonator. A nitride semiconductor laser element having a concave portion having the above-described shape formed thereon has a nitride semiconductor laser element having a resonator end face which is cleaved from the concave portion, and has a stable wafer shape.

Further, in the same manner as the wafer substrate of the present invention, a wafer substrate including a nitride semiconductor layer including a light-emitting layer is laminated on a nitride semiconductor substrate, wherein the nitride semiconductor on the wafer substrate a first divided guiding groove including a plurality of dot portions discretely arranged in a first direction extending along a surface of the resonator end face after the splitting, and the plurality of dot portions are respectively associated with the first The width in the second direction orthogonal to the direction has a shape in which the distal end side is narrower than the rear end side, and the distal end side of the point portion is opposed to the rear end side of the other point portion adjacent to the point portion. Configuration. Such a wafer substrate is a relatively straightforward cleavage orbit at the time of splitting. That is, the shape of the wafer when the wafer substrate is sliced can be stabilized. [Effects of the Invention]

According to the present invention, the wafer can be divided by a splitting with high precision in accordance with a predetermined split line. Therefore, the shape of the wafer can be stabilized and the yield can be improved.

Hereinafter, embodiments of the present invention will be described based on the drawings. Fig. 1 is a view showing a configuration example of a nitride semiconductor laser device 10 of the present embodiment. The nitride semiconductor laser device (hereinafter referred to as "wafer") 10 is mounted on a semiconductor laser device and is supplied with a predetermined injection current to emit laser light in the direction of the arrow in the drawing. The wafer 10 is a substrate 11 having a wafer width W. For example, the substrate 11 is a nitride semiconductor substrate made of a nitride semiconductor such as gallium nitride (GaN), aluminum nitride (AlN), or aluminum gallium nitride (AlGaN). A semiconductor layer (semiconductor laminated structure) 12 is formed on the substrate 11. The semiconductor layer 12 is a nitride semiconductor layer formed by growing the c-plane of the substrate 11 as a main surface and growing on the main surface.

The semiconductor layer 12 is composed of at least an active layer, an n-type semiconductor layer, and a p-type semiconductor layer which are the cavity length L of the light-emitting layer. For example, the n-type semiconductor layer is disposed on the substrate 11 side with respect to the active layer, and the p-type semiconductor layer is disposed on the opposite side of the substrate 11 with respect to the active layer. Further, the positional relationship between the n-type semiconductor layer and the p-type semiconductor layer may be reversed. In the active layer, electrons are injected from the n-type semiconductor layer, and holes are injected from the p-type semiconductor layer, and by recombination in the active layer, light is emitted from the active layer. In the n-type semiconductor layer and the p-type semiconductor layer, a strip-shaped ridge portion 13 is formed in a layer located on the side closer to the substrate 11 than the active layer. The ridge portion 13 is a current compressing portion for compressing a current, and is located above the optical waveguide extending in the m-axis direction formed in the active layer.

Further, at both end portions in the extending direction of the ridge portion 13, a pair of resonator end faces facing each other are formed. The end face of the resonator is formed on the surface of the reflecting film formed by the surface of the crack, and the light is reflected by the end faces of the resonators to cause the laser to emit light. The end face of the resonator is formed along the m-plane. In the present embodiment, the end face of the resonator is preferably a split surface. The reason for this is that the surface formed by the cleaving is lower than the surface formed by means other than the chopping of the laser cut surface, and the surface roughness is low, and the end face of the resonator can be secured. High reflectivity required. In the present embodiment, the case where the c-plane of the substrate 11 is the main surface and the m-plane is the resonator end surface will be described. However, the m-plane is the main surface and the c-plane is the resonator end surface. Also.

Next, the process of the wafer 10 shown in FIG. 1 will be described with reference to FIGS. 2 to 5. First, a plurality of wafer substrates (hereinafter simply referred to as "wafers") which are ridge portions 13 serving as optical waveguides are arranged in parallel, and as shown in FIG. 2, the wafer 20 is divided into splittable sizes. A divided wafer (subdivided substrate) 21 is formed. Here, although not specifically illustrated, the ridge portion 13 is a plurality of m-axis directions extending over the wafer 20, and the plurality of ridge portions 13 are arranged in parallel with each other at a predetermined interval in the a-axis direction.

Next, as shown in FIG. 3, a split guiding groove (first dividing guiding groove) 22 for splitting is formed on the surface of the divided wafer 21 by, for example, laser processing. Further, in the end portion of the divided wafer 21 in the a-axis direction, a flaw for cleft palate may be formed by, for example, a diamond cutter. Further, in the present embodiment, the case where the division guide groove 22 is formed by laser processing will be described. However, the division guide groove 22 may be formed by dry etching. The division guide groove 22 extends in a plurality of directions in the cleaving direction, that is, the a-axis direction, and the plurality of division guide grooves 22 are arranged in parallel with each other at a predetermined interval in the m-axis direction. Each of the division guide grooves 22 is constituted by a plurality of dot portions which are discretely arranged along the cleaving direction. The shape of the dot portion of the divided guide groove 22 will be described in detail later.

Next, for example, the split guide groove 22 is used to lift the blade, and the split wafer 21 is split along the split guide groove 22. The splitting system travels along the m-plane to form a strip wafer 23 as shown in FIG. At this time, a reflecting film is formed on both end faces in the m-axis direction which are the cleaved faces. Thereby, the resonator end face is formed. Next, on the strip wafer 23, a divided guiding groove (second dividing guiding groove) 24 is formed along the direction orthogonal to the first direction and in the m-axis direction in which the optical waveguide extends. Then, the strip wafer 23 is divided by, for example, laser cutting in accordance with the division guide groove 24. Thereby, as shown in FIG. 5, the wafer 10 which has the light-emitting part individually is formed. Further, the cleaving direction (a-axis direction) corresponds to the first direction, and the direction in which the division guiding groove 24 extends (the m-axis direction) corresponds to the second direction.

Hereinafter, the shape of the dot portion of the divided guide groove 22 will be described in detail. As shown in Fig. 6, the dot portion is arranged in a row on a predetermined split line 31 set along the splitting direction, with respect to the width in the direction orthogonal to the predetermined split line 31, having a direction of travel of the split The front end side has a narrower shape than the rear end side. More specifically, the dot portion has a shape in which the width is gradually narrowed toward the traveling direction of the splitting in a plan view. Further, the dot portion has a shape in which the tip end side in the traveling direction of the split is sharp. For example, each of the dot portions may have an arc shape on the rear end side in the traveling direction of the split, and a drop shape (teardrop type) having a sharp shape on the tip end side in the traveling direction of the splitting. Further, at this time, the sharp front end portion of each of the dot portions can be disposed on the predetermined split line 31. Furthermore, the angle of the front end of the dot portion may be set to an arbitrary angle.

The split guide groove 22 formed by the plurality of dot portions of the aforementioned shape is disposed on the predetermined split line 31, and is split according to the predetermined split line 31, whereby the split line 32 can be made to be predetermined The split line 31 becomes a relatively straight person. The GaN substrate used for the substrate 11 of the wafer 10 of the present embodiment is less cleaved than the grown substrate of other diodes such as gallium arsenide (GaAs). One of the reasons is that there is a defect in the GaN substrate due to impurities. When a GaN substrate is used, even if the wafer is to be cleaved in the direction of any crystal plane such as the c-plane or the m-plane to form a wafer strip, there is a case where the wafer cannot be directly separated by the crack due to the above-mentioned defects. That is, there is a case where the dividing line is bent at the point where the defect exists, the wafer is split, and the slant is split.

Therefore, in the present embodiment, as described above, the split guide groove 22 for splitting is a pattern in which the plurality of dot portions are discretely arranged along the cleaving direction, and the shape of the dot portion is set to have a sharp portion. With a shape that is not sharp. Further, each of the dot portions is arranged at a sharp portion on the distal end side in the traveling direction of the splitting, and is disposed on the rear end side without being sharp. At this time, as shown in Fig. 7 (a), the crack is often performed starting from the sharp portion of the dot portion.

The one end portion of the dot portion is opposed to the other end portion of the wide portion formed at the other dot portion adjacent to the dot portion. Therefore, it is assumed that even if the traveling line which is cleaved due to the defect included in the GaN substrate is curved, the splitting track which is bent with one end of the sharp end as the starting point is also at the other end of the wide portion of the other adjacent point portions. The track was corrected in the ministry. Thus, by performing a regular split, as a whole, the chapped orbit will become a relatively straight person. That is, the cleaving traveling line 32 can be set to be substantially linear along the predetermined cleavage line 31. Here, the pitch between the adjacent dot portions is preferably set to a range in which the bending of the split line can be allowed. Thereby, the wafer can be straightly divided within an allowable range that does not largely detach from the predetermined cleavage line 31.

Further, as shown in Fig. 7(b), the dot portion is preferably formed such that at least a part of the groove depth gradually becomes shallow as the traveling direction of the splitting. At this time, the starting point of the splitting is a point of the sharp end of the point portion, so that the splitting orbit can be more appropriately made straight. 8(a) and 8(b) are comparative examples of the divided guide grooves having the dot portions different in shape from the divided guide grooves 22 of the present embodiment. The split guide groove 122 shown in Fig. 8(a) is an example in which the long-axis direction and the split direction are aligned in a point-like portion having an elliptical shape in plan view. The divided guide groove 222 shown in Fig. 8(b) is an example in which a long-axis direction and a splitting direction are aligned in a rectangular dot-like portion in plan view.

In either case, as in the dot portion of the present embodiment, there is no sharp portion and a wide portion that is continuous therewith, so the starting point of the splitting becomes random, and regular splitting cannot be performed. That is, as shown by the dotted line 132 of FIG. 8(a) and the dotted line 232 of FIG. 8(b), the split line is difficult to divide according to the predetermined split line. Further, in the worst case, there is a case where the track correction of the adjacent dot portion cannot be performed, and the split travel line largely deviates from the predetermined split line. Therefore, when the divided guide grooves formed by the dot portions having the shapes shown in Figs. 8(a) and 8(b) are used, the shape of the wafer is unstable and the yield is lowered.

On the other hand, in the present embodiment, even if the GaN substrate contains a defect, as described above, the wafer can be directly divided in accordance with a predetermined split line. Therefore, the shape of the wafer can be stabilized, and the reduction in yield can be appropriately prevented. Fig. 9 is a view showing the positional relationship between the dot portion of the split guide groove 22 and the ridge portion 13 of the corresponding optical waveguide. As shown in FIG. 9, the plurality of dot portions of the divided guide grooves 22 are formed on the surface (the semiconductor layer 12) of the divided wafer 21, and extend along the m-plane of the resonator end face (a-axis direction). Formed discretely. Further, each of the dot portions of the divided guide grooves 22 is formed above the optical waveguide constituting the resonator, that is, where the ridge portion 13 is not formed.

In the extending direction (a-axis direction) of the m-plane which is the end face of the resonator, the distance between the adjacent dot-like portions is set to be equal to or less than the distance between the adjacent optical waveguides (ridge portions 13). Further, in the extending direction (m-axis direction) of the optical waveguide (ridge portion 13), the distance between the adjacent dot portions (the distance between the centers) is set to be equal to the cavity length L of the wafer 10. For example, as shown in FIG. 9, each of the dot portions may be formed at a vertex position of the wafer 10 in plan view.

When the wafer 10 is formed from the divided wafer 21, first, the divided wafer 21 is divided by the splitting guide groove 22 in accordance with the splitting to form the strip wafer 23. Then, the strip wafer 23 is divided into a direction orthogonal to the cleaving direction by laser cutting or the like to form the wafer 10. At this time, the strip wafer 23 is divided at the center position of the dot portion of the division guide groove 22 to form the wafer 10.

As shown in FIG. 10, in the wafer 10 thus formed, a scratch 22a, which is a portion of the dot portion, remains at the apex portion of the semiconductor layer 12. The cut scratch 22a is a width in the m-axis direction (second direction) orthogonal to the cleaving direction, that is, the a-axis direction (first direction), and is a concave portion different from the other end side in the cleaving direction. Further, the formation position and the separation distance of the dot portion of the division guide groove 22 in the cleaving direction are present in the wafer 10 which is sliced, not in the apex portion of the semiconductor layer 12, but in the direction of the splitting A portion of the edge (the upper side of the end face of the resonator) remains in the condition of the scratch 22a. As described above, in the method of manufacturing a nitride semiconductor laser device of the present embodiment, the wafer substrate can be divided with high precision in accordance with a predetermined cleavage line. Therefore, the shape of the wafer can be stabilized and the yield can be improved.

(Modification) In the above-described embodiment, the case where the wafer 10 includes the current compression unit having the ridge structure has been described. However, the current compression unit having the non-ridge structure (buried structure) may be provided. The buried structure is a structure in which another semiconductor layer is laminated as a buried layer on both sides of the region by etching and cutting the outside of the region of the current path into which the current is injected. Also in this case, the same effects as those of the above embodiment can be obtained.

Further, in the above-described embodiment, the shape of the dot-shaped portion of the divided guide groove 22 is described as a water droplet type (teardrop type). However, the shape of the dot portion is only required to be split in plan view. The front end side in the traveling direction may be narrower than the rear end side, and may be, for example, a triangle or a fan shape. Further, the shape of the dot portion is not limited to a shape that is gradually narrowed toward the traveling direction of the split in a plan view, and may have a stepped shape, for example. In addition, the shape of the dot portion is not limited to a plan view, and the front end side in the traveling direction of the splitting is sharp, and may have a table shape or the like.

10‧‧‧Nitride semiconductor laser components (wafer)

11‧‧‧Nitride semiconductor substrate

12‧‧‧Semiconductor layer

13‧‧‧ ridge

20‧‧‧ Wafer Substrate

21‧‧‧Split wafer

22‧‧‧Division guide groove

22a‧‧‧cut marks

23‧‧‧Strip wafer

24‧‧‧Segmentation guide groove

31‧‧‧Predetermined splitting line

32‧‧‧Cracking line

132‧‧‧ dotted line

232‧‧‧ dotted line

Fig. 1 is a perspective view showing a structural example of a nitride semiconductor laser element of the embodiment. Fig. 2 is a view for explaining a manufacturing process of a nitride semiconductor laser element. FIG. 3 is a view for explaining a manufacturing process of a nitride semiconductor laser element. Fig. 4 is a view for explaining a manufacturing process of a nitride semiconductor laser element. Fig. 5 is a view for explaining a manufacturing process of a nitride semiconductor laser element. FIG. 6 is an example of a divided guide groove. Fig. 7 is a view showing the shape of a divided guide groove. [Fig. 8] A comparative example of dividing the guide groove. Fig. 9 is a view showing a position at which a division guide groove is formed on a wafer substrate. Fig. 10 is a view showing a scratch of a nitride semiconductor laser element.

Claims (12)

A method of manufacturing a nitride semiconductor laser device, which is characterized in that a nitride semiconductor laser device comprising a nitride semiconductor layer including a light-emitting layer of a resonator end face is laminated on a nitride semiconductor substrate, and is characterized in that The method of: preparing a wafer substrate on which the nitride semiconductor layer is stacked on the nitride semiconductor substrate; and forming the resonator on the nitride semiconductor layer of the wafer substrate to be ruptured to form the resonator The first dividing guide groove of the plurality of dot portions in which the first direction is discretely arranged in the first direction, and the plurality of dot portions are widths in the second direction orthogonal to the first direction, respectively. The front end side is narrower than the rear end side, and the front end side of the dot portion is disposed to face the rear end side of the other dot portion adjacent to the dot portion. The method of manufacturing a nitride semiconductor laser device according to claim 1, further comprising: following the first divided guide groove, from the front end side of the dot portion toward the dot portion The rear end side of the other dot portion is configured to cleave the wafer substrate to form a surface of the resonator end surface. The method for producing a nitride semiconductor laser device according to the first aspect of the invention, wherein the point portion has a width in the second direction from the rear end side toward the front end side A shape whose width gradually narrows. The method for producing a nitride semiconductor laser device according to the first aspect of the invention, wherein the point portion has a shape in which the front end side is sharp. The method for producing a nitride semiconductor laser device according to the first aspect of the invention, wherein the point portion has at least a part of a depth in a direction orthogonal to the first direction and the second direction. The rear end side has a shape that gradually becomes shallow toward the front end side. The method of manufacturing a nitride semiconductor laser device according to the first aspect of the invention, wherein the first divided guiding groove is formed by laser processing in the process of forming the first divided guiding groove. The method of manufacturing a nitride semiconductor laser device according to the first aspect of the invention, wherein the first divided guiding groove is formed by dry etching in a process of forming the first divided guiding groove. The method for producing a nitride semiconductor laser device according to the first aspect of the invention, wherein in the process of forming the first divided guide trench, in addition to the optical waveguide constituting the resonator, The dot portion of the first divided guide groove is formed. The method for producing a nitride semiconductor laser device according to claim 8, wherein the nitride semiconductor layer has a plurality of optical waveguides disposed adjacent to each other in the first direction; In the above-described first divided guide groove, the distance between the point portions that are adjacent to each other in the first direction is equal to or smaller than the distance between the optical waveguides in the first direction. The point portion of the first divided guide groove. The method for producing a nitride semiconductor laser device according to the first aspect of the invention, further comprising: a process of forming a second divided guide groove along the second direction on the nitride semiconductor layer; The division of the wafer substrate is performed in accordance with the second division guide groove. A nitride semiconductor laser device is a nitride semiconductor substrate formed by laminating a nitride semiconductor layer having a light-emitting layer extending from a resonator end surface extending in a first direction by cleaving The laser element is characterized in that a portion of the nitride semiconductor layer extending in the first direction is formed with a width in a second direction orthogonal to the first direction in one end side of the first direction Different recesses in the other end side. A wafer substrate on a nitride semiconductor substrate, a wafer substrate formed by stacking a nitride semiconductor layer including a light-emitting layer, wherein: a nitride substrate is formed on the nitride semiconductor layer of the wafer substrate a first divided guiding groove having a plurality of dot portions that are discretely arranged in a first direction extending from a surface of the end face of the resonator after cleaving; and the plurality of dot-shaped portions are respectively second to the first direction The width of the direction has a shape in which the front end side is narrower than the rear end side, and the front end side of the dot portion is disposed to face the rear end side of the other dot portion adjacent to the dot portion.