TW201835112A - 通過熱絲化學氣相沉積來沉積用於感測器應用之聚合物層的方法 - Google Patents

通過熱絲化學氣相沉積來沉積用於感測器應用之聚合物層的方法 Download PDF

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TW201835112A
TW201835112A TW106143090A TW106143090A TW201835112A TW 201835112 A TW201835112 A TW 201835112A TW 106143090 A TW106143090 A TW 106143090A TW 106143090 A TW106143090 A TW 106143090A TW 201835112 A TW201835112 A TW 201835112A
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gas
substrate
monomer
polymer layer
initiator
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TW106143090A
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柯林 奈克
尤瑞 美林克
普萊文Ｋ 那瓦卡
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美商應用材料股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Pathology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Plasma & Fusion (AREA)
TW106143090A 2016-12-09 2017-12-08 通過熱絲化學氣相沉積來沉積用於感測器應用之聚合物層的方法 TW201835112A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662432357P 2016-12-09 2016-12-09
US62/432,357 2016-12-09
US15/833,552 US10794853B2 (en) 2016-12-09 2017-12-06 Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition
US15/833,552 2017-12-06

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US (1) US10794853B2 (https=)
EP (1) EP3551780A4 (https=)
JP (1) JP7114593B2 (https=)
CN (1) CN110023536A (https=)
TW (1) TW201835112A (https=)
WO (1) WO2018106886A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180148832A1 (en) * 2016-11-25 2018-05-31 Applied Materials, Inc. Methods for depositing flowable carbon films using hot wire chemical vapor deposition
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition
JP7110090B2 (ja) * 2018-12-28 2022-08-01 東京エレクトロン株式会社 基板処理方法および基板処理システム
CN113853449B (zh) * 2019-05-31 2023-10-10 应用材料公司 用于在基板上形成膜的方法及系统
US12290835B2 (en) 2022-07-18 2025-05-06 Tokyo Electron Limited Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)
DE102023136688A1 (de) 2023-12-23 2025-06-26 Christian-Albrechts-Universität zu Kiel, Körperschaft des öffentlichen Rechts Selbstladung-polymer-elektret-herstellungsverfahren

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8400916A (nl) 1984-03-22 1985-10-16 Stichting Ct Voor Micro Elektr Werkwijze voor het vervaardigen van een isfet en een aldus vervaardigde isfet.
JPH06273376A (ja) * 1993-03-19 1994-09-30 Mitsubishi Cable Ind Ltd イオン感応性電界効果型トランジスタ用イオン感応膜の製造方法
JP4144271B2 (ja) 2002-07-09 2008-09-03 住友化学株式会社 高分子薄膜およびそれを用いた高分子薄膜素子
US6800802B2 (en) * 2002-11-09 2004-10-05 Novaest Optitronix Inc. Circuit device for solar energy application
JP2004197209A (ja) * 2002-12-20 2004-07-15 Kyocera Corp ホットワイヤｃｖｄ装置
GB0310858D0 (en) * 2003-05-12 2003-06-18 Univ Cambridge Tech Polymer transistor
WO2004100281A1 (en) 2003-05-12 2004-11-18 Cambridge University Technical Services Limited Polymer transistor
US7431969B2 (en) 2005-08-05 2008-10-07 Massachusetts Institute Of Technology Chemical vapor deposition of hydrogel films
US20090087562A1 (en) 2007-09-27 2009-04-02 Long Hua Lee Method of preparing cross-linked organic glasses for air-gap sacrificial layers
US8603195B2 (en) * 2009-08-24 2013-12-10 Applied Materials, Inc. 3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques
US8481159B2 (en) 2009-09-04 2013-07-09 Basf Se Water-absorbent porous polymer particles having specific sphericity and high bulk density
US8117987B2 (en) * 2009-09-18 2012-02-21 Applied Materials, Inc. Hot wire chemical vapor deposition (CVD) inline coating tool
WO2011106624A1 (en) * 2010-02-26 2011-09-01 Alliance For Sustainable Energy, Llc Hot wire chemical vapor deposition (hwcvd) with carbide filaments
EP2580368B1 (en) 2010-06-11 2015-11-18 Tokyo Electron Limited Apparatus for chemical vapor deposition control
US8709537B2 (en) 2010-10-22 2014-04-29 Applied Materials, Inc. Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes
US8662941B2 (en) * 2011-05-12 2014-03-04 Applied Materials, Inc. Wire holder and terminal connector for hot wire chemical vapor deposition chamber
US8642376B2 (en) 2011-05-16 2014-02-04 Applied Materials, Inc. Methods for depositing a material atop a substrate
WO2012165944A1 (en) 2011-05-27 2012-12-06 Universiteit Utrecht Holding B.V. Hot wire chemical vapour deposition process for producing an inorganic-polymer multi-layer stack
US8785304B2 (en) * 2011-08-26 2014-07-22 Applied Materials, Inc. P-I-N structures and methods for forming P-I-N structures having an i-layer formed via hot wire chemical vapor deposition (HWCVD)
US8906454B2 (en) * 2011-09-12 2014-12-09 Applied Materials, Inc. Methods for depositing metal-polymer composite materials atop a substrate
US20130337615A1 (en) * 2012-05-25 2013-12-19 Applied Materials, Inc. Polymer hot-wire chemical vapor deposition in chip scale packaging
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
MY171132A (en) 2012-12-17 2019-09-27 Basf Se Water-soluble, hydrophobically associating copolymers having novel hydrophobically associating monomers
EP2946430A1 (en) * 2013-01-18 2015-11-25 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Proton conductive membrane deposited by hot wire cvd technique
US20140314982A1 (en) 2013-02-15 2014-10-23 Massachusetts Institute Of Technology Grafted polymer surfaces for dropwise condensation, and associated methods of use and manufacture
US9305796B2 (en) 2013-11-05 2016-04-05 Applied Materials, Inc. Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition chamber
CN103928525A (zh) * 2014-04-25 2014-07-16 中国科学院微电子研究所 场效应晶体管液体传感器及其制备方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

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CN110023536A (zh) 2019-07-16
EP3551780A1 (en) 2019-10-16
JP2020501372A (ja) 2020-01-16
JP7114593B2 (ja) 2022-08-08
US20180164245A1 (en) 2018-06-14
US10794853B2 (en) 2020-10-06
WO2018106886A1 (en) 2018-06-14
EP3551780A4 (en) 2020-08-05

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