TW201822290A - Scribing apparatus - Google Patents

Scribing apparatus Download PDF

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Publication number
TW201822290A
TW201822290A TW106133791A TW106133791A TW201822290A TW 201822290 A TW201822290 A TW 201822290A TW 106133791 A TW106133791 A TW 106133791A TW 106133791 A TW106133791 A TW 106133791A TW 201822290 A TW201822290 A TW 201822290A
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substrate
dicing
laser beam
adhesive
substance
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TW106133791A
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Chinese (zh)
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TWI618166B (en
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金鎭洛
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塔工程有限公司
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Publication of TW201822290A publication Critical patent/TW201822290A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/10Glass-cutting tools, e.g. scoring tools
    • C03B33/102Glass-cutting tools, e.g. scoring tools involving a focussed radiation beam, e.g. lasers
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033Apparatus for opening score lines in glass sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

A scribing apparatus cuts a combined substrate along a pattern of medium. The combined substrate includes a first substrate, a second substrate, and medium interposed between the first substrate and the second substrate in a predetermined pattern. The scribing apparatus includes a scribing unit forming a scribing line along the pattern of the medium on the surface of the combined substrate, a laser-emitting unit illuminating a laser beam toward at least a portion of the medium to change a property of the at least a portion of the medium, a concave-convex measuring unit measuring concave-convex of the surface of the combined substrate, and a moving unit moving the laser-emitting unit toward the combined substrate or away from the combined substrate according to the concave-convex of the surface of the combined substrate measured by the concave-convex measuring unit.

Description

劃片設備    Dicing equipment   

本發明涉及一種為了切割基板在基板上形成劃片線的設備。 The present invention relates to an apparatus for forming a scribe line on a substrate for cutting the substrate.

通常,通過使用單元玻璃面板來製造用於平板顯示器的液晶顯示面板、有機電致發光面板、無機電致發光面板、透射投影基板、反射投影基板等,單元玻璃面板是通過將如玻璃等脆性母體玻璃面板切割成預定尺寸而獲得。 Generally, a liquid crystal display panel, an organic electroluminescence panel, an inorganic electroluminescence panel, a transmission projection substrate, a reflection projection substrate, and the like for a flat panel display are manufactured by using a unit glass panel. The glass panel is obtained by cutting into a predetermined size.

母體玻璃面板是由第一基板及第二基板粘貼形成的粘合基板。第一基板可以具備薄膜電晶體,第二基板可以具備濾色片。作為粘著劑使用粘合膏來粘貼第一基板及第二基板。第一基板及第二基板之間具有液晶及/或電子元件等。 The mother glass panel is an adhesive substrate formed by pasting a first substrate and a second substrate. The first substrate may include a thin film transistor, and the second substrate may include a color filter. The first substrate and the second substrate are attached using an adhesive paste as an adhesive. A liquid crystal and / or an electronic element and the like are provided between the first substrate and the second substrate.

將粘合基板切割為單元基板的過程(工程)包括:劃片過程和裂片過程,所述劃片過程是沿著第一基板及第二基板上的假想的預定切割線按壓並移動由如鑽石等材質製成的劃片輪來形成劃片線,而所述裂片過程是通過沿著劃片線按壓粘合基板來切割粘合基板以獲得單元基板。 The process (engineering) of cutting the bonded substrate into a unit substrate includes a dicing process and a slicing process in which the scribe process is pressed and moved along an imaginary predetermined cutting line on the first substrate and the second substrate by a diamond such as a diamond. A scribe wheel made of other materials is used to form a scribe line, and the splitting process is to cut the bonded substrate by pressing the bonded substrate along the scribe line to obtain a unit substrate.

另外,為了加大液晶及/或電子元件等在粘合基板之間實際所占的區域(有效區域)的大小,可以考慮沿著在粘合基板之間形成的粘合膏圖案切割粘合基板的方案。這時,沿著粘合膏圖案在第一基板及第二基板上形成有劃片線,由此,在粘合基板之間被硬化的粘合膏與粘合基板 一同被切割。 In addition, in order to increase the size of an area (effective area) actually occupied between the adhesive substrates such as liquid crystal and / or electronic components, it is possible to consider cutting the adhesive substrate along the adhesive paste pattern formed between the adhesive substrates. Program. At this time, a scribe line is formed on the first substrate and the second substrate along the adhesive paste pattern, whereby the adhesive paste hardened between the adhesive substrates is cut together with the adhesive substrate.

再者,粘合膏可以粘貼于形成在第一基板及第二基板內面的黑矩陣。也即,粘合膏圖案可以與形成在第一基板及第二基板內面的黑矩陣圖案一致。 Furthermore, the adhesive paste may be stuck on a black matrix formed on the inner surfaces of the first substrate and the second substrate. That is, the adhesive paste pattern may coincide with the black matrix pattern formed on the inner surfaces of the first substrate and the second substrate.

如果粘合膏粘貼于黑矩陣,則在切割粘合基板時,粘合膏及黑矩陣應與粘合基板一同被切割。但是,因黑矩陣的材質、粘合膏與黑矩陣之間的粘著力問題,存在粘合基板無法順利切割的問題。 If the adhesive paste is adhered to the black matrix, when cutting the adhesive substrate, the adhesive paste and the black matrix should be cut together with the adhesive substrate. However, due to the problem of the material of the black matrix and the adhesion between the adhesive paste and the black matrix, there is a problem that the adhesive substrate cannot be cut smoothly.

上述問題不僅在切割粘合基板之間介入有粘合膏及黑矩陣的粘合基板時存在,在粘合基板之間介入有保護膜、電極、有機膜、粘著劑、密封劑等物質(以下稱為“介入物質”),沿著介入物質的圖案在粘合基板上形成劃片線而切割粘合基板的過程中也會發生。 The above problems exist not only when cutting an adhesive substrate in which an adhesive paste and a black matrix are interposed between the adhesive substrates, but also in a protective film, an electrode, an organic film, an adhesive, a sealant, etc. between the adhesive substrates ( Hereinafter referred to as "intervening substance") also occurs in the process of cutting the bonded substrate by forming a scribing line on the bonded substrate along the pattern of the intervening substance.

現有文獻 Existing literature

專利文獻 Patent literature

韓國公開專利第10-2007-0070824號(2007.07.04) Korean Published Patent No. 10-2007-0070824 (2007.07.04)

本發明致力於解決上述以往技術中存在的問題,目的在於提供一種劃片設備,所述劃片設備可以沿著介入物質的圖案容易地切割粘合基板,所述粘合基板包括第一基板、第二基板、以及以預定圖案介入於第一基板及第二基板之間的介入物質。 The present invention is devoted to solving the problems existing in the foregoing prior art, and an object thereof is to provide a dicing apparatus that can easily cut an adhesive substrate along a pattern of an intervening substance, the adhesive substrate including a first substrate, The second substrate and an intervening substance interposed between the first substrate and the second substrate in a predetermined pattern.

為達到上述目的,本發明實施例提供一種劃片設備,其沿著介入物質的圖案切割粘合基板,所述粘合基板包括第一基板、第二基板、以及以預定圖案介入於第一基板及第二基板之間的介入物質,所述劃片設 備包括:劃片單元,其沿著所述介入物質的圖案在所述粘合基板的表面上形成劃片線;激光束照射單元,其向所述介入物質的至少一部分照射激光束,使所述介入物質的至少一部分變性;凹凸測量單元,其用於測量所述粘合基板表面的凹凸;以及,移動裝置,其根據由所述凹凸測量單元測量的所述粘合基板表面的凹凸,向朝向所述粘合基板的方向及遠離所述粘合基板的方向移動所述激光束照射單元。 In order to achieve the above object, an embodiment of the present invention provides a dicing apparatus that cuts an adhesive substrate along a pattern of an intervening substance, the adhesive substrate including a first substrate, a second substrate, and an intervening first substrate in a predetermined pattern. And an intervening substance between the substrate and the second substrate, the dicing device includes: a dicing unit that forms a scribing line on the surface of the bonded substrate along the pattern of the intervening substance; a laser beam irradiation unit that Irradiating at least a part of the intervening substance with a laser beam to denature at least a part of the intervening substance; a concavo-convex measuring unit for measuring concavo-convex on the surface of the adhesive substrate; and a moving device according to the concavo-convex The unevenness on the surface of the bonded substrate measured by the measurement unit moves the laser beam irradiation unit in a direction toward the bonded substrate and a direction away from the bonded substrate.

本發明實施例中的劃片設備,向以預定圖案介入於粘合基板之間的介入物質照射激光束,使得至少一部分介入物質變性,根據介入物質的圖案在粘合基板上形成劃片線,從而切割粘合基板。由此,可以與粘合基板一同輕鬆切割介入於粘合基板之間的介入物質。 The dicing device in the embodiment of the present invention irradiates a laser beam to an intervening substance interposed between the bonding substrates in a predetermined pattern to denature at least a part of the intervening substance, and forms a scribing line on the bonding substrate according to the pattern of the intervening substance, Thereby, the bonded substrate is cut. This makes it possible to easily cut the intervening substance interposed between the adhesive substrates together with the adhesive substrate.

再者,本發明實施例中的劃片設備,根據被凹凸測量單元測量的粘合基板表面的凹凸,激光束照射單元向Z軸方向移動,因此,激光束照射單元和粘合基板表面之間的間隔可以維持預定間隔。因此,即使在粘合基板表面上具有凹凸的情況下,從激光束照射單元照射出的激光束的光斑也可以位於粘合基板之間的介入物質內的準確位置上,從而可以達到介入物質的準確變性。 Furthermore, the dicing apparatus in the embodiment of the present invention moves the laser beam irradiation unit to the Z-axis direction according to the unevenness of the surface of the bonded substrate measured by the unevenness measurement unit. Therefore, between the laser beam irradiation unit and the surface of the bonded substrate The interval can be maintained at a predetermined interval. Therefore, even in the case where there is unevenness on the surface of the bonded substrate, the spot of the laser beam emitted from the laser beam irradiation unit can be located at an accurate position in the intervening substance between the adhesive substrates, so that the intervening substance can be achieved. Accurate denaturation.

由此,可以與粘合基板一同輕鬆切割介入於粘合基板之間的介入物質。 This makes it possible to easily cut the intervening substance interposed between the adhesive substrates together with the adhesive substrate.

10‧‧‧介入物質 10‧‧‧ Intervening Substance

11‧‧‧第一介入物質 11‧‧‧ the first intervening substance

12‧‧‧第二介入物質 12‧‧‧Second Intervening Substance

110‧‧‧第一框架 110‧‧‧First Frame

120‧‧‧第二框架 120‧‧‧ second frame

210‧‧‧第一劃片頭 210‧‧‧ First scribe head

220‧‧‧第二劃片頭 220‧‧‧Second scribe head

310‧‧‧第一劃片單元 310‧‧‧The first scribe unit

311‧‧‧劃片輪 311‧‧‧Dicing Wheel

313‧‧‧第一劃片輪模塊 313‧‧‧The first scribing wheel module

315‧‧‧輥 315‧‧‧roller

317‧‧‧第一輥模塊 317‧‧‧First Roller Module

320‧‧‧第二劃片單元 320‧‧‧Second scribe unit

321‧‧‧劃片輪 321‧‧‧Dicing Wheel

323‧‧‧第二劃片輪模塊 323‧‧‧Second scribing wheel module

325‧‧‧輥 325‧‧‧roller

327‧‧‧第二輥模塊 327‧‧‧Second Roller Module

410‧‧‧第一激光束照射單元 410‧‧‧First laser beam irradiation unit

420‧‧‧第二激光束照射單元 420‧‧‧Second laser beam irradiation unit

510、520‧‧‧移動裝置 510, 520‧‧‧ mobile devices

610、620‧‧‧凹凸測量單元 610, 620‧‧‧ bump measurement unit

611‧‧‧凹凸測量頭 611‧‧‧Concave and convex measuring head

612‧‧‧凹凸測量部件 612‧‧‧ Bump measuring part

613‧‧‧位置測量裝置 613‧‧‧Position measuring device

614‧‧‧基準部件 614‧‧‧ benchmark parts

615‧‧‧感應部件 615‧‧‧Sensor

619‧‧‧降低摩擦部件 619‧‧‧ Reduce friction parts

700‧‧‧控制單元 700‧‧‧ control unit

810‧‧‧凹凸測量單元 810‧‧‧ Bump Measurement Unit

811‧‧‧凹凸測量頭 811‧‧‧Concave and convex measuring head

813‧‧‧距離測量裝置 813‧‧‧Distance measuring device

814‧‧‧發光部 814‧‧‧Lighting Department

815‧‧‧收光部 815‧‧‧Lighting Department

A‧‧‧變性的部分 A‧‧‧Degeneration part

C‧‧‧裂紋 C‧‧‧ Crack

L‧‧‧線 L‧‧‧ line

P‧‧‧光斑 P‧‧‧light spot

S‧‧‧基板 S‧‧‧ substrate

S1‧‧‧第一基板 S1‧‧‧First substrate

S2‧‧‧第二基板 S2‧‧‧Second substrate

圖1為通過本發明第一實施例中的劃片設備切割的粘合基板的概略剖面圖。 FIG. 1 is a schematic cross-sectional view of a bonded substrate cut by a dicing apparatus in a first embodiment of the present invention.

圖2為本發明第一實施例中的劃片設備的概略示意圖。 FIG. 2 is a schematic diagram of a dicing apparatus in the first embodiment of the present invention.

圖3為本發明第一實施例中劃片設備所具備的激光束照射單元的概略示意圖。 FIG. 3 is a schematic diagram of a laser beam irradiation unit provided in the dicing apparatus according to the first embodiment of the present invention.

圖4至圖6為通過本發明第一實施例中的劃片設備向介入物質照射激光束,在粘合基板形成劃片線的狀態的示意圖。 4 to 6 are schematic views of a state in which a scribe line is formed on the bonded substrate by irradiating a laser beam to the intervening substance through the dicing apparatus in the first embodiment of the present invention.

圖7至圖9為用於說明本發明第一實施例中的劃片設備的動作的流程圖。 7 to 9 are flowcharts for explaining the operation of the dicing apparatus in the first embodiment of the present invention.

圖10為本發明第二實施例中的劃片設備的概略示意圖。 FIG. 10 is a schematic diagram of a dicing apparatus in a second embodiment of the present invention.

圖11為本發明第二實施例中劃片設備的凹凸測量單元的概略示意圖。 FIG. 11 is a schematic diagram of a concavo-convex measurement unit of a dicing apparatus in a second embodiment of the present invention.

圖12為本發明第三實施例中劃片設備的凹凸測量單元的概略示意圖。 FIG. 12 is a schematic diagram of a concavo-convex measurement unit of a dicing apparatus in a third embodiment of the present invention.

以下,參照附圖對本發明實施例中的劃片設備進行說明。 Hereinafter, a dicing apparatus in an embodiment of the present invention will be described with reference to the drawings.

如圖1所示,本發明第一實施例所述劃片設備的切割對象是粘合了第一基板S1及第二基板S2的粘合基板S。例如,第一基板S1可以具備薄膜電晶體,第二基板S2可以具備濾色片。粘合基板S之間可以預定圖案介入有如粘合膏、黑矩陣、保護膜、電極、有機膜、粘著劑、密封劑等那樣的介入物質10,通過上述介入物質10可以維持第一基板S1及第二基板S2之間的間隔。圖1示出了在第一基板S1及第二基板S2的內面,作為第一介入物質11形成有黑矩陣,在黑矩陣之間作為第二介入物質12形成有粘合膏的狀態。在粘合基板S之間可以配置有液晶及/或電子元件,為了加大液晶及/或電子元件等在粘合基板S之間所占區域(有效區域)的大小,可以考慮沿著介入物質10的圖案切割粘合基板S的方案。 As shown in FIG. 1, the cutting target of the dicing apparatus according to the first embodiment of the present invention is a bonded substrate S to which a first substrate S1 and a second substrate S2 are bonded. For example, the first substrate S1 may include a thin film transistor, and the second substrate S2 may include a color filter. An intervening substance 10 such as an adhesive paste, a black matrix, a protective film, an electrode, an organic film, an adhesive, a sealant, etc. can be interposed in a predetermined pattern between the adhesive substrates S, and the first substrate S1 can be maintained by the intervening substance 10 And the distance between the second substrate S2. FIG. 1 shows a state where a black matrix is formed as the first intervening substance 11 on the inner surfaces of the first substrate S1 and the second substrate S2, and an adhesive paste is formed as the second intervening substance 12 between the black matrices. Liquid crystal and / or electronic components may be arranged between the bonded substrates S. In order to increase the size of the area (effective area) occupied by the liquid crystal and / or electronic components between the bonded substrates S, it is possible to consider intervening substances. A pattern of 10 is a plan for cutting the bonded substrate S.

因此,本發明第一實施例提供與介入物質10一同輕鬆切割粘合基板S的劃片設備。 Therefore, the first embodiment of the present invention provides a dicing apparatus that easily cuts the bonded substrate S together with the intervening substance 10.

另外,欲形成劃片線的粘合基板S的移送方向定義為Y軸方向,與粘合基板S的移送方向(Y軸方向)交叉的方向定義為X軸方向。並且,垂直於放置粘合基板S的X-Y平面的方向定義為Z軸方向。 In addition, the transfer direction of the bonded substrate S where the scribe line is to be formed is defined as the Y-axis direction, and the direction crossing the transfer direction (Y-axis direction) of the bonded substrate S is defined as the X-axis direction. And, a direction perpendicular to the X-Y plane on which the bonded substrate S is placed is defined as a Z-axis direction.

如圖2所示,本發明第一實施例中的劃片設備包括:第一框架110,其向X軸方向延長;第一劃片頭210,其可在X軸方向上移動地設置於第一框架110:第二框架120,其在第一框架110的下方與第一框架110平行地向X軸方向延長;第二劃片頭220,其可在X軸方向上移動地設置於第二框架120。 As shown in FIG. 2, the dicing apparatus according to the first embodiment of the present invention includes: a first frame 110 that extends in the X-axis direction; and a first dicing head 210 that is movably disposed in the X-axis direction on the first Frame 110: a second frame 120 extending below the first frame 110 in the X-axis direction parallel to the first frame 110; a second dicing head 220 which is movably disposed in the second frame 120 in the X-axis direction .

第一框架110上朝著X軸方向設置有多個第一劃片頭210,第二框架120上朝著X軸方向設置有多個第二劃片頭220。第一框架110及第二框架120一體形成。 A plurality of first dicing heads 210 are disposed on the first frame 110 toward the X-axis direction, and a plurality of second dicing heads 220 are disposed on the second frame 120 toward the X-axis direction. The first frame 110 and the second frame 120 are integrally formed.

第一劃片頭210及第二劃片頭220在Z軸方向上相對而設置。第一劃片頭210可以包括第一劃片單元310,第一劃片單元310可以包括具備劃片輸311的第一劃片輪模塊313及具備輥315的第一輥模塊317。第二劃片頭220可以包括第二劃片單元320,第二劃片單元320可以包括具備劃片輪321的第二劃片輪模塊323及具備輥325的第二輥模塊327。 The first dicing head 210 and the second dicing head 220 are disposed facing each other in the Z-axis direction. The first dicing head 210 may include a first dicing unit 310, and the first dicing unit 310 may include a first dicing wheel module 313 having a dicing input 311 and a first roller module 317 having a roller 315. The second dicing head 220 may include a second dicing unit 320, and the second dicing unit 320 may include a second dicing wheel module 323 including a dicing wheel 321 and a second roller module 327 including a roller 325.

第一劃片輪模塊313的劃片輪311與第二輥模塊327的輥325相對齊地配置,第二劃片輪模塊323的劃片輪321與第一輥模塊317的輥315相對齊地配置。第一劃片輪模塊313的劃片輪311及第一輥模塊317的輥315在X軸方向上排成一列,第二劃片輪模塊323的劃片輪321及第二輥模塊327 的輥325在X軸方向上排成一列。 The dicing wheel 311 of the first dicing wheel module 313 is aligned with the roller 325 of the second roller module 327, and the dicing wheel 321 of the second dicing wheel module 323 is aligned with the roller 315 of the first roller module 317. Configuration. The scribe wheel 311 of the first scribe wheel module 313 and the roller 315 of the first roller module 317 are aligned in the X-axis direction, and the scribe wheel 321 of the second scribe wheel module 323 and the roller of the second roller module 327 325 is arranged in a row in the X-axis direction.

第一劃片輪模塊313的劃片輪311及第一輥模塊317的輥315可按壓第一基板S1,第二劃片輪模塊323的劃片輪321及第二輥模塊327的輥325可按壓第二基板S2。 The scribe wheel 311 of the first scribe wheel module 313 and the roller 315 of the first roller module 317 may press the first substrate S1, and the scribe wheel 321 of the second scribe wheel module 323 and the roller 325 of the second roller module 327 may Press the second substrate S2.

第一劃片輪模塊313及第二劃片輪模塊323可沿著Z軸方向上移動,由此,可以調整第一劃片輪311及第二劃片輪321按壓粘合基板S的按壓力。並且,通過第一劃片輪模塊313及第二劃片輪模塊323在Z軸方向上的移動,可以調整第一劃片輪311及第二劃片輪321在粘合基板S內的切割深度。 The first dicing wheel module 313 and the second dicing wheel module 323 can be moved in the Z-axis direction, so that the pressing force of the first dicing wheel 311 and the second dicing wheel 321 to press the bonding substrate S can be adjusted. . In addition, by moving the first dicing wheel module 313 and the second dicing wheel module 323 in the Z-axis direction, the cutting depth of the first dicing wheel 311 and the second dicing wheel 321 in the bonded substrate S can be adjusted. .

由此,在多個劃片輪311、321分別按壓第一基板S1及第二基板S2的狀態下,通過第一劃片頭210及第二劃片頭220相對於粘合基板S1向X軸方向移動,可以在第一基板S1及第二基板S2分別形成劃片線。在此過程中,多個輥315、325起到支撐多個劃片輪311、321按壓第一基板S1及第二基板S2的力度的作用。 Thereby, the first scribe head 210 and the second scribe head 220 move in the X-axis direction with respect to the bonded substrate S1 by the first scribe head 210 and the second scribe head 220 in a state where the plurality of scribe wheels 311 and 321 press the first substrate S1 and the second substrate S2, respectively. The scribe lines may be formed on the first substrate S1 and the second substrate S2, respectively. In this process, the plurality of rollers 315 and 325 play a role of supporting the strength of the plurality of dicing wheels 311 and 321 pressing the first substrate S1 and the second substrate S2.

此時,多個劃片輪311、321與平行於介入物質10的圖案的線L對齊設置,由此,由多個劃片輪311、321形成的劃片線可以與平行於介入物質10的圖案的線L對齊。因此,粘合基板S可以沿著介入物質10的圖案切割。 At this time, the plurality of scribe wheels 311 and 321 are aligned with the line L parallel to the pattern of the intervening substance 10, and thus, the scribe lines formed by the plurality of scribe wheels 311 and 321 can be parallel to the The lines L of the pattern are aligned. Therefore, the adhesive substrate S can be cut along the pattern of the intervening substance 10.

如圖2至圖4所示,第一劃片頭210可以具備第一激光束照射單元410,第二劃片頭220可以具備第二激光束照射單元420。第一激光束照射單元410及第二激光束照射單元420向介入物質10的至少一部分照射激光束而使得介入物質10的至少一部分變性。當激光束照射到介入物質10,則介入物質10會燒毀。由此,在沿著介入物質10的圖案切割粘合基板S時,介入 物質10也容易被切割。 As shown in FIGS. 2 to 4, the first dicing head 210 may be provided with a first laser beam irradiation unit 410, and the second dicing head 220 may be provided with a second laser beam irradiation unit 420. The first laser beam irradiation unit 410 and the second laser beam irradiation unit 420 irradiate at least a part of the intervention substance 10 with a laser beam to denature at least a part of the intervention substance 10. When the laser beam is irradiated onto the intervening substance 10, the intervening substance 10 is burned. Therefore, when the adhesive substrate S is cut along the pattern of the intervening substance 10, the intervening substance 10 is also easily cut.

第一激光束照射單元410及第二激光束照射單元420可以放出可被介入物質10吸收的波段的激光束。第一激光束照射單元410及第二激光束照射單元420可以與產生激光束的激光源(未圖示)連接,作為激光源,可以使用CO2激光、YAG激光、脈衝激光、飛秒激光等各種激光源。並且,在激光源與第一激光束照射單元410及第二激光束照射單元420之間可以根據需要包括擴束器、準直器等光學元件。 The first laser beam irradiation unit 410 and the second laser beam irradiation unit 420 may emit a laser beam in a wavelength band that can be absorbed by the intervening substance 10. The first laser beam irradiation unit 410 and the second laser beam irradiation unit 420 may be connected to a laser source (not shown) that generates a laser beam. As the laser source, a CO 2 laser, a YAG laser, a pulse laser, a femtosecond laser, or the like may be used. Various laser sources. In addition, an optical element such as a beam expander and a collimator may be included between the laser source and the first laser beam irradiation unit 410 and the second laser beam irradiation unit 420 as required.

第一激光束照射單元410及第二激光束照射單元420可向Z軸方向移動,由此,可以調整由第一激光束照射單元410及第二激光束照射單元420照射的激光束的光斑P的Z軸方向上的位置。隨著激光束的光斑P在Z軸方向上的位置被調整,激光束依次照射於第一介入物質11及第二介入物質12,由此,第一介入物質11及第二介入物質12會依次發生變性。 The first laser beam irradiation unit 410 and the second laser beam irradiation unit 420 can be moved in the Z-axis direction, thereby adjusting the spot P of the laser beam irradiated by the first laser beam irradiation unit 410 and the second laser beam irradiation unit 420. Position in the Z-axis direction. As the position of the spot P of the laser beam in the Z-axis direction is adjusted, the laser beam is irradiated on the first intervention substance 11 and the second intervention substance 12 in this order. Thus, the first intervention substance 11 and the second intervention substance 12 will be sequentially Degeneration occurs.

參照圖4至圖9,對本發明第一實施例中的劃片設備的動作進行說明。 The operation of the dicing apparatus in the first embodiment of the present invention will be described with reference to FIGS. 4 to 9.

首先,如圖4及圖7所示,步驟S110:第一激光束照射單元410及第二激光束照射單元420位於與介入物質10的圖案相對齊的位置,向介入物質10照射激光束。隨著激光束的光斑P位於介入物質10,介入物質10的至少一部分在激光束的光及熱的影響下變性。 First, as shown in FIGS. 4 and 7, step S110: the first laser beam irradiating unit 410 and the second laser beam irradiating unit 420 are located at positions aligned with the pattern of the intervention substance 10, and irradiate the laser beam to the intervention substance 10. As the spot P of the laser beam is located on the intervention substance 10, at least a part of the intervention substance 10 is denatured under the influence of light and heat of the laser beam.

由此,如圖5所示,在介入物質10內存在有變性的部分A,變性的部分A與介入物質10的其他部分相比容易被切割。 As a result, as shown in FIG. 5, a denatured portion A exists in the intervention substance 10, and the denatured portion A is easier to be cut than other portions of the intervention substance 10.

再者,如本發明的第一實施例,介入物質10包括作為第一介入物質11的黑矩陣和作為第二介入物質12的粘合膏時,第一激光束照射單元 410及第二激光束照射單元420一邊向Z軸方向移動,一邊依次向第一介入物質11及第二介入物質12照射激光束。由此,第一介入物質11及第二介入物質12上存在變性的部分,第一介入物質11及第二介入物質12容易被切割。 Furthermore, as in the first embodiment of the present invention, when the intervention substance 10 includes a black matrix as the first intervention substance 11 and an adhesive paste as the second intervention substance 12, the first laser beam irradiation unit 410 and the second laser beam The irradiation unit 420 sequentially irradiates the first intervention substance 11 and the second intervention substance 12 with a laser beam while moving in the Z-axis direction. As a result, there is a denatured portion on the first intervention substance 11 and the second intervention substance 12, and the first intervention substance 11 and the second intervention substance 12 are easily cut.

如上所述,介入物質10的至少一部分變性後,如圖5及圖7所示,步驟S120:與介入物質10的變性的部分對應地用劃片輪311、321按壓粘合基板S,在粘合基板S上形成劃片線。在劃片輪311、321的壓力下,上述劃片線形成為粘合基板S內的裂紋C。由此,粘合基板S可以沿著劃片線切割。 As described above, after at least a part of the intervening substance 10 is denatured, as shown in FIG. 5 and FIG. 7, step S120: pressing the bonding substrate S with the dicing wheels 311 and 321 corresponding to the denatured part of the intervening substance 10, A scribe line is formed on the bonding substrate S. Under the pressure of the dicing wheels 311 and 321, the scribe line is formed as a crack C in the bonding substrate S. Thereby, the bonded substrate S can be cut along the scribe line.

如上所述,在由於介入物質10的變性的部分A介入物質10變脆弱的狀態下,在粘合基板S上形成劃片線,因此,粘合基板S容易切割。作為另外一例,在介入物質10變性、粘合基板S上形成劃片線的狀態下,粘合基板S移送至裂片過程後被切割。 As described above, the scribe line is formed on the adhesive substrate S in a state where the intervening substance 10 is weakened due to the degeneration of the intervening substance 10, and therefore, the adhesive substrate S is easily cut. As another example, in a state where the intervening substance 10 is denatured and a scribe line is formed on the adhesive substrate S, the adhesive substrate S is cut after being transferred to the cleavage process.

另外一例,如圖6及圖8所示,還可以包括步驟S130:在介入物質10變性、粘合基板S上形成劃片線的狀態下,用劃片輪311、321按壓介入物質10的變性的部分A,在介入物質10的變性的部分A形成劃片線。 As another example, as shown in FIG. 6 and FIG. 8, step S130 may be further included: in a state where the intervening substance 10 is denatured and a scribing line is formed on the bonding substrate S, the scribing wheels 311 and 321 are pressed to denature the intervening substance 10. A scribe line is formed in the portion A of the intervening substance 10.

如本發明的第一實施例,介入物質10包括作為第一介入物質11的黑矩陣和作為第二介入物質12的粘合膏時,第一劃片輪模塊313及第二劃片輪模塊323向Z軸方向移動,在第一介入物質11及第二介入物質12上依次形成劃片線。由此,通過形成在第一介入物質11及第二介入物質12的劃片線,容易切割第一介入物質11及第二介入物質12。 As in the first embodiment of the present invention, when the intervention substance 10 includes a black matrix as the first intervention substance 11 and an adhesive paste as the second intervention substance 12, the first scribe wheel module 313 and the second scribe wheel module 323 Moving in the Z-axis direction, scribe lines are sequentially formed on the first intervening substance 11 and the second intervening substance 12. Accordingly, the scribe lines formed on the first interventional substance 11 and the second interventional substance 12 can easily cut the first interventional substance 11 and the second interventional substance 12.

為了使得劃片輪311、321容易到達介入物質10,在粘合基板S上形成劃片線的過程中,劃片單元310、320可以在粘合基板S上形成劃片線而使得介入物質10的變性的部分A暴露於外部。 In order to make the dicing wheels 311 and 321 easily reach the intervening substance 10, in the process of forming scribe lines on the bonded substrate S, the dicing units 310 and 320 can form scribe lines on the bonded substrate S to make the intervening substance 10 The denatured part A is exposed to the outside.

如上,不僅在粘合基板S上形成劃片線,在介入物質10上也會形成劃片線,因此可更加容易地切割粘合基板S。 As described above, not only the scribe line is formed on the adhesive substrate S, but also the scribe line is formed on the intervening substance 10, so that the adhesive substrate S can be cut more easily.

作為另一例,如圖9所示,首先執行步驟S210:與介入物質10的圖案對應地用劃片輪311、321按壓粘合基板S而在粘合基板S上形成劃片線,之後執行步驟S220:向沿劃片線存在的介入物質10的至少一部分照射激光束,使得介入物質10的至少一部分產生變性。 As another example, as shown in FIG. 9, step S210 is first performed: pressing the bonding substrate S with the dicing wheels 311 and 321 corresponding to the pattern of the intervening substance 10 to form a scribe line on the bonding substrate S, and then performing the step S220: Irradiate a laser beam to at least a part of the intervention substance 10 existing along the scribe line, so that at least a part of the intervention substance 10 is denatured.

此時,在粘合基板S上形成劃片線的過程中,劃片單元310、320可以形成劃片線來使得介入物質10的一部分暴露於外部,使得激光束圓滑地照射至介入物質10。 At this time, in the process of forming the scribing line on the adhesive substrate S, the scribing units 310 and 320 may form a scribing line so that a part of the intervention substance 10 is exposed to the outside, so that the laser beam is smoothly radiated to the intervention substance 10.

並且,在粘合基板S上形成劃片線的過程中,劃片單元310、320可以在介入物質10的一部分上形成劃片線。 In addition, in the process of forming a scribe line on the adhesive substrate S, the scribe units 310 and 320 may form a scribe line on a part of the intervening substance 10.

如本發明的第一實施例,介入物質10包括作為第一介入物質11的黑矩陣和作為第二介入物質12的粘合膏時,第一激光束照射單元410及第二激光束照射單元420向Z軸方向移動,激光束依次照射於第一介入物質11及第二介入物質12。 As in the first embodiment of the present invention, when the intervention substance 10 includes a black matrix as the first intervention substance 11 and an adhesive paste as the second intervention substance 12, the first laser beam irradiation unit 410 and the second laser beam irradiation unit 420 Moving in the Z-axis direction, the laser beam is sequentially irradiated on the first intervention substance 11 and the second intervention substance 12.

本發明第一實施例中的劃片設備向以預定圖案介入於粘合基板S之間的介入物質10照射激光束來使得介入物質10的至少一部分變性,根據介入物質10的圖案,在粘合基板S上形成劃片線,而切割粘合基板S。由此,與粘合基板S一同可以輕鬆切割介入於粘合基板S之間的介入物質10。 The dicing apparatus in the first embodiment of the present invention irradiates the intervening substance 10 interposed between the bonding substrates S in a predetermined pattern with a laser beam to denature at least a part of the intervening substance 10. A scribe line is formed on the substrate S, and the bonded substrate S is cut. This makes it possible to easily cut the intervening substance 10 interposed between the adhesive substrates S together with the adhesive substrate S.

以下,參照圖10至圖11對本發明第二實施例中的劃片設備進行說明。與本發明的第一實施例結構相同的部分將使用相同的參考符號, 對此的詳細說明將省略。 Hereinafter, a dicing apparatus in a second embodiment of the present invention will be described with reference to FIGS. 10 to 11. The same components as those of the first embodiment of the present invention will be assigned the same reference numerals, and detailed descriptions thereof will be omitted.

根據情況,粘合基板S的表面並不會一直保持平坦,而會形成輕微的凹凸。如果粘合基板S具有凹凸,粘合基板S在Z軸方向上的位置會發生變化,並且介入於粘合基板S之間的介入物質10在Z軸方向上的位置也會發生變化。由此,在粘合基板S具有凹凸的狀態下,由激光束照射單元410、420照射激光束時,會產生激光束的光斑P沒有位於介入物質10,導致介入物質10無法正確變性的問題。 According to circumstances, the surface of the adhesive substrate S does not always remain flat, but slight unevenness is formed. If the adhesive substrate S has irregularities, the position of the adhesive substrate S in the Z-axis direction changes, and the position of the intervening substance 10 interposed between the adhesive substrate S in the Z-axis direction also changes. Therefore, when the adhesive substrate S has unevenness, when the laser beam is irradiated by the laser beam irradiation units 410 and 420, the spot P of the laser beam is not located on the intervening substance 10, and the intervening substance 10 cannot be properly denatured.

由此,在本發明的第二實施例提供一種劃片設備,其測量粘合基板S的凹凸,根據粘合基板S的凹凸,來調整激光束照射單元410、420在Z軸方向上的位置,從而使得激光束的光斑P準確位於介入物質10。 Therefore, in a second embodiment of the present invention, a dicing apparatus is provided which measures the unevenness of the adhesive substrate S and adjusts the positions of the laser beam irradiation units 410 and 420 in the Z-axis direction according to the unevenness of the adhesive substrate S. Therefore, the spot P of the laser beam is accurately located on the intervention substance 10.

如圖10及圖11所示,本發明第二實施例中的劃片設備包括:移動裝置510、520,其將激光束照射單元410、420向Z軸方向移動;凹凸測量單元610、620,用於測量粘合基板S表面的凹凸;控制單元700,根據由凹凸測量單元610、620測量的粘合基板S的凹凸來控制移動裝置510、520,以調整激光束照射單元410、420在Z軸方向上的位置。 As shown in FIG. 10 and FIG. 11, the dicing apparatus in the second embodiment of the present invention includes: moving devices 510 and 520 that move the laser beam irradiation units 410 and 420 in the Z-axis direction; and unevenness measuring units 610 and 620. For measuring the unevenness on the surface of the bonded substrate S; the control unit 700 controls the mobile devices 510 and 520 according to the unevenness of the bonded substrate S measured by the unevenness measuring units 610 and 620 to adjust the laser beam irradiation units 410 and 420 at Z Position in the axis direction.

移動裝置510、520分別與激光束照射單元410、420連接,將激光束照射單元410、420向相鄰於粘合基板S的方向及與粘合基板S相分開的方向移動。作為移動裝置510、520可以使用通過氣壓或油壓運行的致動器、通過電磁作用來運行的直線電機或如球杆裝置的直線移動裝置。 The moving devices 510 and 520 are connected to the laser beam irradiation units 410 and 420, respectively, and move the laser beam irradiation units 410 and 420 in a direction adjacent to the bonded substrate S and a direction separated from the bonded substrate S. As the moving devices 510 and 520, an actuator that operates by air pressure or oil pressure, a linear motor that operates by electromagnetic action, or a linear movement device such as a club device can be used.

凹凸測量單元610、620包括設置於第一劃片頭210的第一凹凸測量單元610及設置於第二劃片頭220的第二凹凸測量單元620。設置於第一劃片頭210的第一凹凸測量單元610與設置於第二劃片頭220的第二凹凸測 量單元620具有相同的結構及作用效果。以下,將設置於第一劃片頭210的第一凹凸測量單元610為代表稱為凹凸測量單元610,參照圖11對凹凸測量單元610進行說明。 The unevenness measuring units 610 and 620 include a first unevenness measuring unit 610 provided on the first dicing head 210 and a second unevenness measuring unit 620 provided on the second dicing head 220. The first unevenness measuring unit 610 provided on the first dicing head 210 and the second unevenness measuring unit 620 provided on the second dicing head 220 have the same structure and effects. Hereinafter, the first unevenness measuring unit 610 provided in the first dicing head 210 will be referred to as an unevenness measuring unit 610, and the unevenness measuring unit 610 will be described with reference to FIG. 11.

如圖11所示,凹凸測量單元610包括:凹凸測量頭611,其設置於第一劃片頭210,與第一劃片頭210一同沿著粘合基板S的表面移動;凹凸測量部件612,其設置於凹凸測量頭611上,根據粘合基板S表面的凹凸,可以向朝向粘合基板S表面的方向及遠離粘合基板S表面的方向移動;位置測量裝置613,用於測量凹凸測量部件612在Z軸方向的位置。 As shown in FIG. 11, the unevenness measuring unit 610 includes: an unevenness measuring head 611 provided on the first dicing head 210 and moving along the surface of the adhesive substrate S together with the first dicing head 210; On the unevenness measuring head 611, according to the unevenness of the surface of the bonded substrate S, it can be moved toward the surface of the bonded substrate S and away from the surface of the bonded substrate S; a position measuring device 613 is used to measure the Position in the Z axis direction.

凹凸測量部件612維持接觸於粘合基板S的表面的狀態。當凹凸測量頭611移動時,凹凸測量部件612可以隨著粘合基板S的凹凸向Z軸方向移動。 The unevenness measuring member 612 maintains a state of being in contact with the surface of the adhesive substrate S. When the unevenness measuring head 611 moves, the unevenness measuring member 612 can move in the Z-axis direction along with the unevenness of the adhesive substrate S.

凹凸測量部件612可向Z軸方向滑動地設置於凹凸測量頭611,使得凹凸測量部件612可以隨著粘合基板S的凹凸向Z軸方向移動。並且,凹凸測量部件612上可以連接有如彈簧的彈性件,使得凹凸測量部件612可以隨著粘合基板S表面的凹凸向Z軸方向移動。與粘合基板S的表面接觸的凹凸測量部件612的端部,優選地設置有如球或輥那樣的降低摩擦部件619。降低摩擦部件619在接觸於粘合基板S的表面的狀態下可以進行滾動。作為另一例,降低摩擦部件619可以是柔性的塑料、樹脂等材料。 The unevenness measuring member 612 is slidably provided in the unevenness measuring head 611 in the Z-axis direction, so that the unevenness measuring member 612 can be moved in the Z-axis direction in accordance with the unevenness of the adhesive substrate S. In addition, an elastic member such as a spring may be connected to the unevenness measuring member 612, so that the unevenness measuring member 612 can move in the Z-axis direction along with the unevenness of the surface of the adhesive substrate S. The end of the unevenness measuring member 612 that is in contact with the surface of the adhesive substrate S is preferably provided with a friction reducing member 619 such as a ball or a roller. The friction reducing member 619 can roll while being in contact with the surface of the adhesive substrate S. As another example, the friction reducing member 619 may be a material such as a flexible plastic or resin.

位置測量裝置613與控制單元700連接,由位置測量裝置613測量的凹凸測量部件612的位置及位移相關的信息可以被傳送至控制單元700。 The position measurement device 613 is connected to the control unit 700, and information related to the position and displacement of the unevenness measuring member 612 measured by the position measurement device 613 can be transmitted to the control unit 700.

位置測量裝置613包括:基準部件614,其設置於凹凸測量部 件612;感應部件615,與基準部件614相對地設置於位置測量頭611。作為另一例,基準部件614可以設置在位置測量頭611,感應部件615可以設置在凹凸測量部件612。上述位置測量裝置613利用基準部件614與感應部件615的相互作用來測量凹凸測量部件612的位置及位移。 The position measuring device 613 includes a reference member 614 provided on the uneven measurement member 612 and a sensing member 615 provided on the position measuring head 611 opposite to the reference member 614. As another example, the reference member 614 may be provided on the position measuring head 611, and the sensing member 615 may be provided on the uneven measurement member 612. The position measuring device 613 uses the interaction of the reference member 614 and the sensing member 615 to measure the position and displacement of the unevenness measuring member 612.

作為一例,基準部件614可以包括具有預定刻度的標尺,感應部件615可以包括拍攝標尺的攝像機。這種時候,以通過感應部件615拍攝的標尺的圖像為基準,測量基準部件614與感應部件615之間的相對位置,以測量的相對位置為準可以測量凹凸測量部件612的位置。 As an example, the reference component 614 may include a scale having a predetermined scale, and the sensing component 615 may include a camera that captures the scale. At this time, the relative position between the reference part 614 and the sensing part 615 is measured based on the image of the ruler captured by the sensing part 615, and the position of the unevenness measuring part 612 can be measured based on the measured relative position.

作為另一例,基準部件614可以包括根據位置不同而反射角度不同的反射面,感應部件615包括向反射面發光的發光傳感器和接收從反射面反射的光的收光傳感器。這時候,通過測量從反射面反射的光的反射角度,來測量基準部件614與感應部件615之間的相對位置,以測量的相對位置為準來測量凹凸測量部件612的位置。 As another example, the reference member 614 may include reflecting surfaces having different reflection angles according to different positions, and the sensing member 615 includes a light emitting sensor that emits light to the reflecting surface and a light receiving sensor that receives light reflected from the reflecting surface. At this time, the relative position between the reference member 614 and the sensing member 615 is measured by measuring the reflection angle of the light reflected from the reflecting surface, and the position of the unevenness measuring member 612 is measured based on the measured relative position.

根據如上構成,在凹凸測量部件612的端部接觸於粘合基板S的表面的狀態下,凹凸測量頭611沿著粘合基板S的表面移動,則凹凸測量部件612根據粘合基板S表面的凹凸向Z軸方向移動。 According to the above configuration, in a state where the end of the unevenness measuring member 612 is in contact with the surface of the adhesive substrate S, the unevenness measuring head 611 moves along the surface of the adhesive substrate S, and the unevenness measuring member 612 is based on the surface of the adhesive substrate S. The unevenness moves in the Z-axis direction.

隨著凹凸測量部件612的移動,基準部件614與感應部件615之間的相對位置會變,以這種相對位置的變化為準可以測量凹凸測量部件612的位移。 As the unevenness measuring member 612 moves, the relative position between the reference member 614 and the sensing member 615 changes, and the displacement of the unevenness measuring member 612 can be measured based on the change in the relative position.

這種凹凸測量部件612的位移表示粘合基板S表面的凹凸的大小。此時,控制單元700以由位置測量裝置613測量的凹凸測量部件612的位移為準來控制移動裝置510,使得移動裝置510對應於凹凸測量部件612的 位移移動激光束照射單元410。 The displacement of this unevenness measuring member 612 indicates the size of the unevenness on the surface of the adhesive substrate S. At this time, the control unit 700 controls the mobile device 510 based on the displacement of the unevenness measuring member 612 measured by the position measuring device 613, so that the mobile device 510 moves the laser beam irradiation unit 410 corresponding to the displacement of the unevenness measuring member 612.

由此,根據由位置測量裝置613測量的凹凸測量部件612的位移,激光束照射單元410可以向朝向粘合基板S的方向及遠離粘合基板S的方向移動,因此,激光束照射單元410與粘合基板S表面之間的間隔可以均衡維持預定間隔。 Accordingly, according to the displacement of the unevenness measuring member 612 measured by the position measuring device 613, the laser beam irradiation unit 410 can move in a direction toward and away from the bonded substrate S. Therefore, the laser beam irradiation unit 410 and The interval between the surfaces of the adhesive substrate S can be maintained at a predetermined interval in equilibrium.

在這裡,預定間隔是指由激光束照射單元410照射的激光束的光斑P位於介入物質10內的準確位置時的間隔。預定間隔可以通過多次的實驗或模擬來設定。 Here, the predetermined interval refers to an interval when the spot P of the laser beam irradiated by the laser beam irradiation unit 410 is located at an accurate position within the intervention substance 10. The predetermined interval can be set through multiple experiments or simulations.

如上所述,激光束照射單元410根據由凹凸測量單元610測量的粘合基板S表面的凹凸向Z軸方向移動,因此,激光束照射單元410和粘合基板S表面之間的間隔可以均衡維持預定間隔。由此,即使粘合基板S表面上形成有凹凸,由激光束照射單元410照射的激光束的光斑P可以位於粘合基板S之間的介入物質10內的準確位置,從而可以使得介入物質10準確變性,可以與粘合基板S一同輕鬆切割介入於粘合基板S之間的介入物質10。 As described above, the laser beam irradiation unit 410 moves in the Z-axis direction according to the unevenness of the surface of the bonded substrate S measured by the unevenness measurement unit 610, and therefore, the interval between the laser beam irradiation unit 410 and the surface of the bonded substrate S can be maintained in a balanced manner Predetermined interval. Thus, even if unevenness is formed on the surface of the adhesive substrate S, the spot P of the laser beam irradiated by the laser beam irradiation unit 410 can be located at an accurate position within the intervening substance 10 between the adhesive substrates S, so that the intervening substance 10 can be made With accurate denaturation, the intervening substance 10 interposed between the adhesive substrates S can be easily cut together with the adhesive substrate S.

以下,參照圖12對本發明第三實施例中的劃片設備進行說明。與本發明的第一實施例及第二實施例中說明的結構相同的部分用相同的附圖標記表示,並省略對此的詳細說明。 Hereinafter, a dicing apparatus in a third embodiment of the present invention will be described with reference to FIG. 12. The same components as those described in the first and second embodiments of the present invention are denoted by the same reference numerals, and detailed descriptions thereof will be omitted.

如圖12所示,本發明第三實施中的劃片設備包括:移動裝置510,其將激光束照射單元410、420向Z軸方向移動;凹凸測量單元810,用於測量粘合基板S表面的凹凸;控制單元700,根據由凹凸測量單元810測量的粘合基板S的凹凸來控制移動裝置510,以調整激光束照射單元410在Z軸方向上的位置。 As shown in FIG. 12, the dicing apparatus in the third embodiment of the present invention includes: a moving device 510 that moves the laser beam irradiation units 410 and 420 in the Z-axis direction; and an unevenness measuring unit 810 for measuring the surface of the bonded substrate S The control unit 700 controls the mobile device 510 to adjust the position of the laser beam irradiation unit 410 in the Z-axis direction according to the unevenness of the adhesive substrate S measured by the unevenness measurement unit 810.

凹凸測量單元810包括:凹凸測量頭811,其設置於第一劃片頭210,與第一劃片頭210一同沿著粘合基板S的表面移動;距離測量裝置813,其設置於凹凸測量頭811,測量與粘合基板S之間的距離。 The unevenness measuring unit 810 includes: an unevenness measuring head 811 provided on the first dicing head 210 and moving along the surface of the adhesive substrate S together with the first dicing head 210; and a distance measuring device 813 provided on the unevenness measuring head 811, The distance from the bonded substrate S is measured.

在凹凸測量頭811移動時,距離測量裝置813實時測量與粘合基板S的距離,根據與粘合基板S的距離的變化來測量粘合基板S的凹凸。 When the unevenness measuring head 811 is moved, the distance measuring device 813 measures the distance from the adhesive substrate S in real time, and measures the unevenness of the adhesive substrate S based on the change in the distance from the adhesive substrate S.

距離測量裝置813包括:發光部814,其向粘合基板S的表面放射激光;收光部815,與發光部814間隔開預定距離,接收被粘合基板S反射的激光。 The distance measuring device 813 includes a light emitting section 814 that emits laser light to the surface of the adhesive substrate S, and a light receiving section 815 that is spaced apart from the light emitting section 814 by a predetermined distance and receives the laser light reflected by the adhesive substrate S.

上述距離測量裝置813將電信號輸出至控制單元700,從而測量與粘合基板S的距離,所述電信號是根據從發光部814發光後被粘合基板S反射的激光的成像位置產生。 The distance measuring device 813 outputs an electric signal to the control unit 700 to measure the distance to the bonded substrate S, and the electrical signal is generated based on the imaging position of the laser light reflected by the bonded substrate S after emitting light from the light emitting portion 814.

在上述結構中,當凹凸測量頭811沿著粘合基板S的表面移動,則由距離測量裝置813測量與粘合基板S表面的距離。 In the above structure, when the unevenness measuring head 811 moves along the surface of the bonded substrate S, the distance from the surface of the bonded substrate S is measured by the distance measuring device 813.

此時,控制單元700以由距離測量裝置813測量的與粘合基板S表面的距離為準來控制移動裝置510,使得移動裝置510根據與粘合基板S表面的距離的變化來移動激光束照射單元410。 At this time, the control unit 700 controls the mobile device 510 based on the distance from the surface of the bonded substrate S measured by the distance measuring device 813, so that the mobile device 510 moves the laser beam according to the change in the distance from the surface of the bonded substrate S. Unit 410.

由此,激光束照射單元410根據由距離測量裝置813測量的與粘合基板S表面的距離的變化,來向朝向粘合基板S的方向及遠離粘合基板S的方向移動,因此,激光束照射單元410與粘合基板S表面之間的間隔可以均衡維持預定間隔。 Accordingly, the laser beam irradiation unit 410 moves in a direction toward and away from the bonded substrate S according to a change in the distance from the surface of the bonded substrate S measured by the distance measuring device 813. Therefore, the laser beam is irradiated. The interval between the unit 410 and the surface of the adhesive substrate S can be maintained in a predetermined interval in equilibrium.

在這裡,預定間隔是指由激光束照射單元410照射的激光束的光斑P位於介入物質10內的準確位置時的間隔。預定間隔可以通過多次的 實驗或模擬來設定。 Here, the predetermined interval refers to an interval when the spot P of the laser beam irradiated by the laser beam irradiation unit 410 is located at an accurate position within the intervention substance 10. The predetermined interval can be set through multiple experiments or simulations.

如上所述,激光束照射單元410根據由凹凸測量單元810測量的粘合基板S表面的凹凸向Z軸方向移動,因此,激光束照射單元410與粘合基板S表面之間的間隔可以均衡維持預定間隔。由此,即使粘合基板S表面上形成有凹凸,由激光束照射單元410照射的激光束的光斑P可以位於粘合基板S之間的介入物質10內的準確位置,從而可以使得介入物質10準確變性。從而可以與粘合基板S一同輕鬆切割介入於粘合基板S之間的介入物質10。 As described above, the laser beam irradiation unit 410 moves in the Z-axis direction according to the unevenness of the surface of the bonded substrate S measured by the unevenness measurement unit 810, and therefore, the interval between the laser beam irradiation unit 410 and the surface of the bonded substrate S can be maintained uniformly. Predetermined interval. Thus, even if unevenness is formed on the surface of the adhesive substrate S, the spot P of the laser beam irradiated by the laser beam irradiation unit 410 can be located at an accurate position within the intervening substance 10 between the adhesive substrates S, so that the intervening substance 10 can be made Accurate denaturation. Thus, the intervening substance 10 interposed between the adhesive substrates S can be easily cut together with the adhesive substrate S.

雖然已經在上面描述了本發明的示例性實施方式,但是本發明的範圍並不限於上述特定實施例,可以在申請專利範圍內進行適當的變化。 Although the exemplary embodiments of the present invention have been described above, the scope of the present invention is not limited to the specific embodiments described above, and appropriate changes can be made within the scope of the patent application.

Claims (7)

一種劃片設備,其沿著介入物質的圖案切割粘合基板,所述粘合基板包括第一基板、第二基板、以及以預定圖案介入於第一基板及第二基板之間的介入物質,其中,所述劃片設備包括:劃片單元,其沿著所述介入物質的圖案,在所述粘合基板的表面上形成劃片線;激光束照射單元,其向所述介入物質的至少一部分照射激光束,使所述介入物質的至少一部分變性;凹凸測量單元,其用於測量所述粘合基板表面的凹凸;以及移動裝置,其根據由所述凹凸測量單元測量的所述粘合基板表面的凹凸,向朝向所述粘合基板的方向及遠離所述粘合基板的方向移動所述激光束照射單元。     A dicing apparatus that cuts an adhesive substrate along a pattern of an intervening substance, the adhesive substrate including a first substrate, a second substrate, and an intervening substance interposed between the first substrate and the second substrate in a predetermined pattern, The dicing device includes a dicing unit that forms a scribe line on a surface of the bonding substrate along a pattern of the intervening substance, and a laser beam irradiation unit that directs at least at least the intervening substance to the intervening substance. A part is irradiated with a laser beam to denature at least a part of the intervening substance; a concavo-convex measurement unit for measuring the concavities and convexities on the surface of the bonded substrate; and a moving device according to the adhesion measured by the concavo-convex measurement unit The unevenness on the substrate surface moves the laser beam irradiation unit in a direction toward the bonded substrate and a direction away from the bonded substrate.     如請求項1所述的劃片設備,其中,所述凹凸測量單元包括:凹凸測量頭,其能夠沿著所述粘合基板的表面移動;凹凸測量部件,其設置於所述凹凸測量頭,與所述粘合基板的表面接觸,隨著所述粘合基板表面的凹凸,可以向朝向所述粘合基板的方向及遠離所述粘合基板的方向移動;以及位置測量裝置,用於測量所述凹凸測量部件的位置。     The dicing apparatus according to claim 1, wherein the unevenness measuring unit includes: an unevenness measuring head capable of moving along the surface of the bonded substrate; an unevenness measuring member provided on the unevenness measuring head, In contact with the surface of the bonded substrate, the surface of the bonded substrate may move in a direction toward the bonded substrate and away from the bonded substrate; and a position measuring device for measuring The position of the unevenness measuring member.     如請求項2所述的劃片設備,其中,接觸於所述粘合基板表面的所述凹凸測量部件的端部具有降低摩擦部件。     The dicing apparatus according to claim 2, wherein an end portion of the unevenness measuring member contacting the surface of the adhesive substrate has a friction reducing member.     如請求項3所述的劃片設備,其中, 所述降低摩擦部件為接觸於所述粘合基板進行滾動的球或輥。     The dicing device according to claim 3, wherein the friction reducing member is a ball or a roller that rolls in contact with the adhesive substrate.     如請求項1所述的劃片設備,其中,所述凹凸測量單元包括距離測量裝置,所述距離測量裝置包括:發光部,其向所述粘合基板的表面放射激光;以及收光部,與所述發光部隔開預定距離並接收被所述粘合基板反射的激光。     The dicing apparatus according to claim 1, wherein the unevenness measuring unit includes a distance measuring device including a light emitting portion that radiates laser light to a surface of the adhesive substrate; A predetermined distance from the light emitting portion and receiving laser light reflected by the adhesive substrate.     如請求項1所述的劃片設備,其中,所述劃片單元在所述第一基板及第二基板形成劃片線,使得所述介入物質的變性的部分暴露於外部。     The dicing device according to claim 1, wherein the dicing unit forms a scribe line on the first substrate and the second substrate so that a degenerate portion of the intervening substance is exposed to the outside.     如請求項6所述的劃片設備,其中,所述劃片單元在暴露於外部的所述介入物質的變性的部分形成劃片線。     The dicing apparatus according to claim 6, wherein the dicing unit forms a scribe line on a degenerate portion of the intervention substance exposed to the outside.    
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JP2002172479A (en) * 2000-09-20 2002-06-18 Seiko Epson Corp Laser parting method, laser parting device, manufacturing method for liquid crystal device, and manufacturing device for liquid crystal
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KR20130134703A (en) * 2012-05-31 2013-12-10 참엔지니어링(주) Laser processing system and method
KR102065370B1 (en) * 2013-05-03 2020-02-12 삼성디스플레이 주식회사 Method of peeling substrate and substrate peeling device
US8912078B1 (en) * 2014-04-16 2014-12-16 Applied Materials, Inc. Dicing wafers having solder bumps on wafer backside
WO2015175268A1 (en) * 2014-05-16 2015-11-19 Applied Materials, Inc. Hybrid wafer dicing approach using an ultra-short pulsed laguerre gauss beam laser scribing process and plasma etch process
JP6432245B2 (en) * 2014-09-26 2018-12-05 三星ダイヤモンド工業株式会社 Substrate cutting method
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