TW201821147A - Method for purifying hydrogen or helium, and device for purifying hydrogen or helium - Google Patents

Method for purifying hydrogen or helium, and device for purifying hydrogen or helium Download PDF

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TW201821147A
TW201821147A TW106128928A TW106128928A TW201821147A TW 201821147 A TW201821147 A TW 201821147A TW 106128928 A TW106128928 A TW 106128928A TW 106128928 A TW106128928 A TW 106128928A TW 201821147 A TW201821147 A TW 201821147A
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gas
adsorption tower
adsorbent
adsorption
hydrogen
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TWI728176B (en
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田中沙織
中谷光利
土屋貴裕
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日商住友精化股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/50Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
    • C01B3/508Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by selective and reversible uptake by an appropriate medium, i.e. the uptake being based on physical or chemical sorption phenomena or on reversible chemical reactions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/02Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
    • B01D53/04Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
    • B01D53/047Pressure swing adsorption
    • B01D53/053Pressure swing adsorption with storage or buffer vessel
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    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00Noble gases; Compounds thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00Noble gases; Compounds thereof
    • C01B23/001Purification or separation processes of noble gases
    • C01B23/0036Physical processing only
    • C01B23/0052Physical processing only by adsorption in solids
    • C01B23/0057Physical processing only by adsorption in solids characterised by the adsorbent
    • C01B23/0063Carbon based materials
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    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00Noble gases; Compounds thereof
    • C01B23/001Purification or separation processes of noble gases
    • C01B23/0036Physical processing only
    • C01B23/0052Physical processing only by adsorption in solids
    • C01B23/0057Physical processing only by adsorption in solids characterised by the adsorbent
    • C01B23/0068Zeolites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00Noble gases; Compounds thereof
    • C01B23/001Purification or separation processes of noble gases
    • C01B23/0036Physical processing only
    • C01B23/0052Physical processing only by adsorption in solids
    • C01B23/0057Physical processing only by adsorption in solids characterised by the adsorbent
    • C01B23/0073Other molecular sieve materials
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/50Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
    • C01B3/56Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with solids; Regeneration of used solids

Abstract

This method that purifies hydrogen or helium from a source gas mainly composed of hydrogen or helium and including volatile aromatic compounds as impurities by using a PSA technique performed using adsorption towers (10A to 10C) filled with absorbents repeats a cycle that includes an adsorption step, a depressurization step, a desorption step, and a cleaning step in the adsorption towers (10A to 10C). The adsorption towers (10A to 10C) are divided into a first region, a second region, and a third region in order from the upstream side to the downstream side in a flow direction of the source gas in the adsorption towers. The first region is filled with a silica gel-based first adsorbent 131 having a fill ratio of 15 to 75 vol% relative to the total fill capacity of adsorbents. The second region is filled with a zeolite-based second adsorbent 132 having a fill ratio of 15 to 75 vol%. The third region is filled with an activated carbon-based third adsorbent 133 having a fill ratio of 5 to 30 vol%.

Description

氫或氦之精製方法以及氫或氦之精製裝置    Method for refining hydrogen or helium and device for refining hydrogen or helium   

本發明是有關於一種利用變壓吸附法而用以精製氫或氦之方法以及裝置。 The invention relates to a method and a device for refining hydrogen or helium by using a pressure swing adsorption method.

由公害防止的觀點,作為廢氣而排出的氣體中的揮發性芳香族化合物的濃度規制為低濃度。例如是,含有甲苯作為雜質之氣體的情形,某地區將地上到達點濃度規定為0.7volppm以下。作為用以對應此種規制的廢氣之處理方法,可為吸收法、冷却法、吸附法、燃燒法等(例如是請參照專利文獻1)。而且,亦具有將藉由此些處理精製後的氣體回收再利用的情形。而且,關於廢氣的處理設備,追求省空間且導入費用以及運作費用廉價的方法。 From the viewpoint of pollution prevention, the concentration of volatile aromatic compounds in the gas discharged as exhaust gas is regulated to a low concentration. For example, in the case of a gas containing toluene as an impurity, a certain area has a ground reaching point concentration of 0.7 volppm or less. As a treatment method for the exhaust gas corresponding to such regulations, there may be an absorption method, a cooling method, an adsorption method, a combustion method, and the like (for example, refer to Patent Document 1). In addition, there may be a case where the gas purified by these processes is recovered and reused. In addition, as for an exhaust gas treatment facility, a method that saves space, and has a low introduction cost and operating cost is pursued.

另一方面,將氫或氦作為工業用氣體的情形,根據用途,為了得到高純度的氣體,有必要追加精製工序。例如是,燃料電池車用的氫的情形,依據ISO14687-2(FCV用氫燃料規格,2012,GradeD)作為氫以外成分的容許濃度,如以總烴有必要為2volppm以下(換算為甲烷)。於此情形亦追求省空間且廉價的方法。藉由吸收法去除烴,使擴散氣體中的烴濃度為1vol%以下是困難的,尚未能加以實現。於冷却法中,由於蒸汽壓份的雜質會殘留於氣相側,於揮發性芳香族化合物 的情形亦難以精製至數ppm等級。於燃燒法中,有必要將氧等進行混合,由於燃燒後產生水或二氧化碳等,不適用於得到高純度的氣體。 On the other hand, when hydrogen or helium is used as an industrial gas, depending on the application, an additional purification step is necessary in order to obtain a high-purity gas. For example, in the case of hydrogen for a fuel cell vehicle, according to ISO14687-2 (FCV hydrogen fuel specifications, 2012, GradeD) as the allowable concentration of components other than hydrogen, it is necessary to use a total hydrocarbon of 2 volppm or less (equivalent to methane). In this case, space-saving and cheap methods are also pursued. It is difficult to remove hydrocarbons by an absorption method so that the concentration of hydrocarbons in the diffusion gas is 1 vol% or less, which has not yet been achieved. In the cooling method, impurities in the vapor pressure fraction remain on the gas phase side, and it is difficult to purify them to a few ppm level in the case of volatile aromatic compounds. In the combustion method, it is necessary to mix oxygen and the like, and water or carbon dioxide is generated after combustion, so it is not suitable for obtaining high-purity gas.

基於上述的理由,作為得到高純度的氫或氦的方法,主要使用吸附法。例如是,為了去除氣體中所含的揮發性芳香族化合物,採用使用合成沸石或疏水性矽膠的變壓吸附法。但是,由於此方法於脫附使用真空裝置,或是在富二氧化矽的沸石或矽膠中亦採用疏水性者,在成本面具有問題(例如是請參照專利文獻1)。 For the reasons described above, as a method of obtaining high-purity hydrogen or helium, an adsorption method is mainly used. For example, in order to remove volatile aromatic compounds contained in a gas, a pressure swing adsorption method using a synthetic zeolite or a hydrophobic silica gel is used. However, since this method uses a vacuum device for desorption or uses hydrophobicity in silica-rich zeolite or silica gel, there is a problem in terms of cost (for example, refer to Patent Document 1).

而且,亦有使用變壓吸附法處理包含揮發性芳香族化合物之廢氣、並降低烴濃度的方法。如於變壓吸附法對吸附劑之再生為可能的話,則不需要加熱或冷却。但是於此方法中,脫附時需要真空裝置,進而需要吸附劑起始的先期成本,在成本面或操作的繁雜面成為問題(例如是請參照專利文獻2、3)。 In addition, there is also a method of using a pressure swing adsorption method to treat an exhaust gas containing a volatile aromatic compound and reduce a hydrocarbon concentration. If regeneration of the adsorbent is possible by pressure swing adsorption, no heating or cooling is required. However, in this method, a vacuum device is required for desorption, and furthermore, the up-front cost of starting the adsorbent is required, which becomes a problem in terms of cost or complicated operation (for example, refer to Patent Documents 2 and 3).

在精製包含揮發性芳香化合物作為雜質之氣體的情形,以往以來採用使用活性碳作為吸附劑的方法。進入活性碳的細孔內之揮發性芳香族化合物不容易脫附。因此採用於脫附使用加熱手段之方法,藉由變溫吸附法或蒸汽的使用而促進脫附。於使用加熱手段的情形,伴隨加熱或冷却而需要附加設備,且熱傳導需要時間等在操作性的方面的問題亦多。 In the case of purifying a gas containing a volatile aromatic compound as an impurity, a method using activated carbon as an adsorbent has conventionally been used. Volatile aromatic compounds entering the pores of activated carbon are not easily desorbed. Therefore, a method for heating by desorption is adopted, and desorption is promoted by a temperature swing adsorption method or the use of steam. In the case of using a heating means, additional equipment is required along with heating or cooling, and there are many problems in operability such as time required for heat conduction.

而且,使用真空再生法的方法,需要用於真空再生的成本。而且,使用沖洗氣(經精製的高純度的製品氣體)的方法,沖洗氣的使用份額亦連繫至成本上昇。進而,關於藉 由加熱再生,同樣的加熱所必須的能量之份額亦連繫至成本上昇。 Furthermore, the method using the vacuum regeneration method requires a cost for the vacuum regeneration. In addition, in the method using a purge gas (refined high-purity product gas), the use share of the purge gas is also linked to rising costs. Furthermore, with regard to regeneration by heating, the share of energy necessary for the same heating is also linked to rising costs.

【先前技術文獻】     [Previous Technical Literature]     【專利文獻】     [Patent Literature]    

【專利文獻1】日本專利公開平9-47635號公報 [Patent Document 1] Japanese Patent Publication No. 9-47635

【專利文獻2】日本專利公開平11-71584號公報 [Patent Document 2] Japanese Patent Publication No. 11-71584

【專利文獻3】日本專利公開2004-42013號公報 [Patent Document 3] Japanese Patent Publication No. 2004-42013

本發明是基於此種事項的情況下而想出者,其課題為提供利用變壓吸附法而由包含揮發性芳香族化合物作為雜質之原料氣體得到成本削減且高純度的氫或氦所適用之方法以及裝置。 The present invention has been conceived based on such matters, and an object thereof is to provide a hydrogen or helium having a reduced cost and a high purity from a source gas containing a volatile aromatic compound as an impurity by a pressure swing adsorption method. Method and device.

如依本發明的第1方面,提供用以藉由使用填充有吸附劑的3塔以上的吸附塔而對各吸附塔重複進行變壓吸附法之循環,而由包含揮發性芳香族化合物作為雜質且包含氫或氦作為主成分的原料氣體精製氫或氦之方法。前述循環包含:吸附工序,藉由使用填充有吸附劑的3塔以上的吸附塔而進行的變壓吸附法,使上述吸附塔於規定的高壓之狀態,於上述吸附塔導入上述原料氣體而使該原料氣體中的上述揮發性芳香族化合物吸附於上述吸附劑,由該吸附塔排出氫或氦的濃度高的製品氣體;減壓工序,由結束上述吸附工序的上述吸附塔排 出塔內殘留的氣體以使塔內的壓力降低;脫附工序,由結束上述減壓工序的上述吸附塔之上述吸附劑使上述揮發性芳香族化合物脫附,排出塔內氣體;清洗工序,將由處於上述減壓工序的其他吸附塔排出的氣體導入結束上述脫附工序的上述吸附塔,以將塔內殘留的氣體排出。上述各吸附塔於上述吸附塔的上述原料氣體的流動方向,由上游側向下游側依序區分為第1區域、第2區域以及第3區域。於上述第1區域填充有填充比率為15~75vol%的範圍之矽膠系的第1吸附劑。於上述第2區域填充有填充比率為15~75vol%的範圍之沸石系的第2吸附劑。於上述第3區域填充有填充比率為5~30vol%的範圍之活性碳系的第3吸附劑。 According to the first aspect of the present invention, it is provided to repeat the pressure swing adsorption cycle for each adsorption tower by using three or more adsorption towers filled with an adsorbent, and to include a volatile aromatic compound as an impurity. A method for refining hydrogen or helium by using a source gas containing hydrogen or helium as a main component. The cycle includes an adsorption step of using a pressure swing adsorption method using three or more adsorption towers filled with an adsorbent to bring the adsorption tower to a predetermined high pressure state, and introducing the raw material gas into the adsorption tower to make the adsorption tower The volatile aromatic compounds in the raw material gas are adsorbed on the adsorbent, and a product gas having a high concentration of hydrogen or helium is discharged from the adsorption tower; and the pressure-reducing step is performed by the adsorption tower exhausting the residue remaining in the tower. Gas to reduce the pressure in the tower; in the desorption step, the volatile aromatic compound is desorbed by the adsorbent in the adsorption tower that has completed the decompression step, and the gas in the tower is discharged; in the cleaning step, the pressure in the tower is reduced. The gas discharged from other adsorption towers in the step is introduced into the adsorption tower that has completed the desorption step to discharge the gas remaining in the tower. The flow direction of the raw material gas of each of the adsorption towers in the adsorption tower is sequentially divided into a first region, a second region, and a third region from an upstream side to a downstream side. The first region is filled with a silicone-based first adsorbent having a filling ratio in a range of 15 to 75 vol%. The second region is filled with a second zeolite-based adsorbent having a filling ratio in a range of 15 to 75 vol%. The third region is filled with an activated carbon-based third adsorbent having a filling ratio in a range of 5 to 30 vol%.

較佳是上述第1吸附劑由親水性矽膠而成。 The first adsorbent is preferably made of a hydrophilic silicone.

如依本發明的第2方面,提供用以由包含揮發性芳香族化合物作為雜質且包含氫或氦作為主成分的原料氣體精製氫或氦之裝置。該裝置具備:3塔以上的吸附塔,個別具有第1氣體通過口以及第2氣體通過口,於該第1氣體通過口與第2氣體通過口之間填充有吸附劑;儲存槽,用於儲存製品氣體;氣液分離手段,將由上述吸附塔的上述第1氣體通過口排出的氣體分離為氣相成分以及液相成分;第1管線,具有連接於原料氣體供給源的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第1氣體通過口側且個別設置有開關閥的複數分支線;第2管線,具有設置有上述氣液分離手段的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第1氣體通過口側且個別設置有開關閥的複數分支線;第3管 線,具有設置有上述儲存槽的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第2氣體通過口側且個別設置有開關閥的複數分支線;第4管線,具有連接於上述第3管線之上述主幹線的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第2氣體通過口側且個別設置有開關閥的複數分支線;第5管線,具有連接於上述第4管線之上述主幹線的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第2氣體通過口側且個別設置有開關閥的複數分支線。上述各吸附塔於上述吸附塔的由上述第1氣體通過口向上述第2氣體通過口依序區分為第1區域、第2區域以及第3區域。於上述第1區域填充有填充比率為15~75vol%的範圍之矽膠系的第1吸附劑。於上述第2區域填充有填充比率為15~75vol%的範圍之沸石系的第2吸附劑。於上述第3區域填充有填充比率為5~30vol%範圍之活性碳系的第3吸附劑。 According to a second aspect of the present invention, there is provided an apparatus for purifying hydrogen or helium from a source gas containing a volatile aromatic compound as an impurity and hydrogen or helium as a main component. The device includes: an adsorption tower of 3 or more towers, each of which has a first gas passage and a second gas passage, and an adsorbent is filled between the first gas passage and the second gas passage; a storage tank is used for Store product gas; gas-liquid separation means that separates the gas discharged from the first gas passage port of the adsorption tower into a gas phase component and a liquid phase component; a first pipeline having a main line connected to a source of a raw gas supply, and an individual line A plurality of branch lines provided on the adsorption tower and connected to the adsorption tower, the first gas passing port side being individually provided with an on-off valve; a second pipeline having a main line provided with the gas-liquid separation means; A plurality of branch lines of the adsorption tower connected to the adsorption tower, the first gas passing port side being individually provided with an on-off valve; a third pipeline having a trunk line provided with the storage tank, and individually installed in the adsorption tower and A plurality of branch lines of the second gas passing port that are connected to the adsorption tower and are individually provided with on-off valves; a fourth line having a connection to the third line The main line of the main line, and a plurality of branch lines that are individually installed in the adsorption tower and connected to the adsorption tower and the second gas passing port side are individually provided with on-off valves; the fifth line has a connection to the fourth line A trunk line of the trunk line, and a plurality of branch lines each provided on the adsorption tower and connected to the adsorption tower, and the second gas passing port side are individually provided with on-off valves. Each of the adsorption towers is sequentially divided into a first region, a second region, and a third region from the first gas passage to the second gas passage in the adsorption tower. The first region is filled with a silicone-based first adsorbent having a filling ratio in a range of 15 to 75 vol%. The second region is filled with a second zeolite-based adsorbent having a filling ratio in a range of 15 to 75 vol%. The third region is filled with an activated carbon-based third adsorbent having a filling ratio ranging from 5 to 30 vol%.

較佳是上述第1吸附劑由親水性矽膠而構成。 The first adsorbent is preferably made of a hydrophilic silicone.

本發明人們對於藉由變壓吸附法由包含揮發性芳香族化合物作為雜質的原料氣體分離氫或氦的方法進行努力檢討,發現在吸附揮發性芳香族化合物的吸附劑之矽膠的後段,填充不吸附揮發性芳香族化合物的吸附劑之沸石以及活性碳,於吸附工序結束後,使用該沸石以及活性碳的層中的比較乾淨的氣體,清洗脫附工序結束後的吸附塔,藉此於脫附時不使用真空裝置或加熱裝置,能夠得到精製後的高純度的製品氣體,從而完成本發明。 The inventors of the present invention conducted a diligent review on a method for separating hydrogen or helium from a raw material gas containing a volatile aromatic compound as an impurity by a pressure swing adsorption method, and found that the rear stage of the silica gel, which adsorbs the volatile aromatic compound, is not filled After the adsorption process of zeolite and activated carbon adsorbing volatile aromatic compounds, the relatively clean gas in the zeolite and activated carbon layer is used to clean the adsorption tower after the desorption process. In some cases, a vacuum device or a heating device is not used, and a highly purified product gas can be obtained, thereby completing the present invention.

如依本發明,能夠以廉價且省空間的裝置使氫或 氦中的作為雜質的揮發性芳香族化合物的含量至1volppm以下。 According to the present invention, the content of volatile aromatic compounds as impurities in hydrogen or helium can be reduced to 1 volppm or less with an inexpensive and space-saving device.

本發明的其他特徵以及優點,參照附圖並以下述進行詳細說明,從而更為明確。 Other features and advantages of the present invention will be described in detail below with reference to the drawings to make it clearer.

X‧‧‧精製裝置 X‧‧‧refining device

10A、10B、10C‧‧‧吸附塔 10A, 10B, 10C‧‧‧Adsorption tower

11‧‧‧氣體通過口(第1氣體通過口) 11‧‧‧ gas passage (first gas passage)

12‧‧‧氣體通過口(第2氣體通過口) 12‧‧‧ gas passage (second gas passage)

131‧‧‧第1吸附劑 131‧‧‧The first adsorbent

132‧‧‧第2吸附劑 132‧‧‧Second adsorbent

133‧‧‧第3吸附劑 133‧‧‧3rd adsorbent

21‧‧‧原料氣體供給源 21‧‧‧ source of raw gas supply

22‧‧‧製品儲存槽 22‧‧‧Product Storage Tank

23‧‧‧廢氣槽 23‧‧‧ exhaust tank

24‧‧‧冷却器(氣液分離手段) 24‧‧‧Cooler (Gas-liquid separation means)

25‧‧‧氣液分離器(氣液分離手段) 25‧‧‧Gas-liquid separator (gas-liquid separation means)

31‧‧‧管線(第1管線) 31‧‧‧Pipeline (Pipeline 1)

32‧‧‧管線(第2管線) 32‧‧‧ pipeline (second pipeline)

33‧‧‧管線(第3管線) 33‧‧‧ Pipeline (3rd pipeline)

34‧‧‧管線(第4管線) 34‧‧‧ Pipeline (4th pipeline)

35‧‧‧管線(第5管線) 35‧‧‧ pipeline (line 5)

31'、32'、33'、34'、35'‧‧‧主幹線 31 ', 32', 33 ', 34', 35'‧‧‧ trunk

31A~31C、32A~32C、33A~33C、34A~34C、35A~35C‧‧‧分支線 31A ~ 31C, 32A ~ 32C, 33A ~ 33C, 34A ~ 34C, 35A ~ 35C‧‧‧ branch line

31a~31c、32a~32c、33a~33c、34a~34c、35a~35c、341、351‧‧‧自動閥 31a ~ 31c, 32a ~ 32c, 33a ~ 33c, 34a ~ 34c, 35a ~ 35c, 341, 351‧‧‧Automatic valve

321、331‧‧‧壓力調節閥 321, 331‧‧‧pressure regulating valve

342、352‧‧‧流量調整閥 342, 352‧‧‧Flow regulating valve

AS‧‧‧吸附工序 AS‧‧‧Adsorption Process

DP‧‧‧減壓工序 DP‧‧‧ Decompression process

DS‧‧‧脫附工序 DS‧‧‧ Desorption Process

RN‧‧‧清洗工序 RN‧‧‧Cleaning process

PR‧‧‧昇壓工序 PR‧‧‧Boosting process

Eq-DP‧‧‧均壓減壓工序 Eq-DP‧‧‧‧Equal pressure decompression process

Eq-DR‧‧‧均壓昇壓工序 Eq-DR‧‧‧ Equalizing voltage step-up process

第1圖所示為本發明的實施型態的用於實施氫之精製方法所使用的精製裝置之概略構成。 FIG. 1 shows a schematic configuration of a refining device used for implementing a hydrogen refining method according to an embodiment of the present invention.

第2圖所示為本發明的實施型態的氫之精製方法的各步驟的氣體流動狀態。 FIG. 2 shows a gas flow state in each step of the hydrogen purification method according to the embodiment of the present invention.

以下關於本發明的較佳實施型態,參照圖式並具體的說明。 The following describes the preferred embodiments of the present invention in detail with reference to the drawings.

第1圖所示為本發明的用於實施氫或氦之精製方法所能夠使用的精製裝置X之概略構成。精製裝置X具備3塔的吸收塔10A、10B、10C,原料氣體供給源21,製品儲存槽22,廢氣槽23,冷却器24,氣液分離器25以及管線31~35。精製裝置X構成為能夠由含氫或氦的原料氣體(粗氫或粗氦)利用變壓吸附法(PSA法)將氫或氦濃縮分離。作為原料氣體之例,來自於有機鹵化物所生成的氫作為主成分,作為雜質例如是可舉出包含揮發性芳香族化合物(例如是甲苯、苯、甲基環己烷等)的氣體。以下是以原料氣體的主成分為氫的情形進行說明,但本發明不限於此,亦能使用於原料氣體的主成分為氦的情形。 FIG. 1 shows a schematic configuration of a refining device X that can be used for implementing a refining method of hydrogen or helium according to the present invention. The refining device X includes three towers of absorption towers 10A, 10B, and 10C, a source gas supply source 21, a product storage tank 22, an exhaust tank 23, a cooler 24, a gas-liquid separator 25, and lines 31 to 35. The purification device X is configured to be capable of concentrating and separating hydrogen or helium from a source gas (crude hydrogen or crude helium) containing hydrogen or helium by a pressure swing adsorption method (PSA method). Examples of the source gas include hydrogen generated from an organic halide as a main component, and examples of the impurity include a gas containing a volatile aromatic compound (for example, toluene, benzene, methylcyclohexane, and the like). The following description is based on the case where the main component of the source gas is hydrogen, but the present invention is not limited to this, and can also be used when the main component of the source gas is helium.

吸附塔10A、10B、10C個別於兩端具有氣體通過口11、12,於氣體通過口11、12之間填充有吸附劑。具體而言,吸附塔10A、10B、10C個別的內部例如是藉由多孔板(省略圖示)而劃分為複數(3個)區域,此些區域中個別填充不同的吸附劑。在本實施型態中,於各吸附塔10A、10B、10C的原料氣體的流動方向,由上游側(氣體通過口11)向下游側(氣體通過口12)依序積層有第1吸附劑131,第2吸附劑132,以及第3吸附劑133。 The adsorption towers 10A, 10B, and 10C each have gas passage ports 11 and 12 at both ends, and an adsorbent is filled between the gas passage ports 11 and 12. Specifically, each of the interiors of the adsorption towers 10A, 10B, and 10C is divided into a plurality of (three) regions by a perforated plate (not shown), and these regions are individually filled with different adsorbents. In this embodiment, the first adsorbent 131 is sequentially stacked from the upstream side (gas passage port 11) to the downstream side (gas passage port 12) in the flow direction of the raw material gas in each of the adsorption towers 10A, 10B, and 10C. , A second adsorbent 132, and a third adsorbent 133.

作為第1吸附劑131,使用具有優先吸附揮發性芳香族化合物之性質的吸附劑。作為此種吸附劑,例如是可舉出矽膠系的吸附劑(親水性矽膠、疏水性矽膠等),其中較佳為親水性矽膠,特佳為矽膠B型。關於第2以及第3吸附劑132、133,使用揮發性芳香族化合物的吸附能相對低的吸附劑。作為第2吸附劑132,可舉出沸石系吸附劑(A型沸石、CaA型沸石、Y型沸石等),其中較佳為CaA型沸石。作為第3吸附劑133,例如是可舉出椰子殼系或石碳系等的活性碳系者。此些的吸附劑一般而言為市售容易入手者,亦不需要前處理。尚且,由於矽膠(或是二氧化矽)於表面具有羥基而為原來親水性,藉由進行高溫加熱或是與烷基矽化劑的反應等的疏水化處理,從而成為疏水性。以往此疏水化處理成為成本增加的原因。 As the first adsorbent 131, an adsorbent having a property of preferentially adsorbing a volatile aromatic compound is used. Examples of such adsorbents include silicone-based adsorbents (hydrophilic silicone, hydrophobic silicone, etc.). Among them, hydrophilic silicone is preferred, and silicone B is particularly preferred. Regarding the second and third adsorbents 132 and 133, an adsorbent having a relatively low adsorption energy of a volatile aromatic compound is used. Examples of the second adsorbent 132 include zeolite-based adsorbents (A-type zeolite, CaA-type zeolite, and Y-type zeolite), and among these, CaA-type zeolite is preferred. Examples of the third adsorbent 133 include activated carbon based materials such as coconut shell based and stone carbon based. These adsorbents are generally commercially available and do not require pretreatment. In addition, since the silicone (or silicon dioxide) has a hydroxyl group on the surface and is originally hydrophilic, it is made hydrophobic by subjecting it to high-temperature heating or a hydrophobizing treatment such as a reaction with an alkyl silicide. This hydrophobizing treatment has been a cause of increased cost in the past.

而且,第1至第3吸附劑131、132、133以相對於吸附劑的填充容量整體而成為規定之填充比率(體積比例)的方式進行調整。具體而言,第1吸附劑131的填充比率為15~75vol%,較佳為15~65vol%的範圍,第2吸附劑132的填 充比率為15~75vol%,較佳為25~75vol%的範圍,第3吸附劑133的填充比率為5~30vol%,較佳為5~20vol%的範圍。第1至第3吸附劑131、132、133的個別填充比率的合計為100vol%。 The first to third adsorbents 131, 132, and 133 are adjusted so as to have a predetermined filling ratio (volume ratio) with respect to the entire filling capacity of the adsorbent. Specifically, the filling ratio of the first adsorbent 131 is 15 to 75 vol%, preferably in the range of 15 to 65 vol%, and the filling ratio of the second adsorbent 132 is 15 to 75 vol%, preferably 25 to 75 vol%. In the range, the filling ratio of the third adsorbent 133 is 5 to 30 vol%, preferably 5 to 20 vol%. The total of the individual filling ratios of the first to third adsorbents 131, 132, and 133 was 100 vol%.

原料供給源21為用於儲存供給至吸附塔10A、10B、10C內的原料氣體之壓力容器。原料氣體所含的揮發性芳香族化合物的濃度並沒有特別的限制,但根據氫或氦的壓力與揮發性芳香族化合物的濃度,揮發性芳香族化合物有在配管內液化的疑慮。因此,較佳是一邊對由原料氣體供給源21至吸附塔10A、10B、10C的配管(後述的管線31的主幹線31')加溫,以及/或是一邊在吸附塔10A、10B、10C之前的主幹線31'上設置捕霧器等。由原料氣體供給源21供給的原料氣體之壓力並沒有特別的限制,但較佳為高壓,因應需要亦可以於主幹線31'設置壓縮機(省略圖示)。而且,在由原料氣體供給源21供給的氫或氦中含有水作為雜質的情形,亦可以於管線31的主幹線31'設置水分去除裝置(省略圖示)。根據PSA法的操作溫度並未特別限制,例如是10~40℃的程度。但是,較佳為如上述的揮發性芳香族化合物不液化程度的溫度(常溫的程度以上)。 The raw material supply source 21 is a pressure vessel for storing a raw material gas supplied to the adsorption towers 10A, 10B, and 10C. The concentration of the volatile aromatic compound contained in the source gas is not particularly limited, but there is a concern that the volatile aromatic compound may be liquefied in the pipe depending on the pressure of hydrogen or helium and the concentration of the volatile aromatic compound. Therefore, it is preferable to heat the piping (the main line 31 'of the line 31 described later) from the source gas supply source 21 to the adsorption towers 10A, 10B, and 10C, and / or to heat the pipes at the adsorption towers 10A, 10B, and 10C. A mist trap and the like are provided on the previous main line 31 '. The pressure of the raw material gas supplied from the raw material gas supply source 21 is not particularly limited, but is preferably high pressure, and a compressor (not shown) may be installed on the main line 31 ′ if necessary. When hydrogen or helium supplied from the source gas supply source 21 contains water as an impurity, a moisture removal device (not shown) may be provided on the main line 31 'of the line 31. The operating temperature according to the PSA method is not particularly limited, and is, for example, about 10 to 40 ° C. However, it is preferable that it is the temperature (degree of normal temperature or more) to the extent that the volatile aromatic compound does not liquefy.

製品儲存槽22為用於儲存由吸附塔10A、10B、10C的氣體通過口12所排出的氣體(後述的製品氣體)之壓力容器。 The product storage tank 22 is a pressure container for storing a gas (a product gas described later) discharged from the gas passage ports 12 of the adsorption towers 10A, 10B, and 10C.

廢氣槽23為用以儲存由吸附塔10A、10B、10C的氣體通過口11所排出的廢氣之壓力容器。 The exhaust gas tank 23 is a pressure vessel for storing exhaust gas discharged from the gas passage openings 11 of the adsorption towers 10A, 10B, and 10C.

冷却器24冷却廢氣。氣液分離器25將經過冷却器24的廢氣於規定壓力下凝縮以分離為氣相成分與液相成分。「氣液分離手段」此用語包含上述冷却器24以及上述氣液分離器25。 The cooler 24 cools the exhaust gas. The gas-liquid separator 25 condenses the exhaust gas passing through the cooler 24 under a predetermined pressure to separate it into a gas phase component and a liquid phase component. The term “gas-liquid separation means” includes the cooler 24 and the gas-liquid separator 25 described above.

管線31具有連接原料氣體供給源21的主幹線31',以及個別連接於吸附塔10A、10B、10C的各氣體通過口11側的分支線31A、31B、31C。於分支線31A、31B、31C設有可在開狀態以及閉狀態之間自動切換的閥(以下將具有此種功能的閥稱為「自動閥」)31a、31b、31c。 The line 31 includes a main line 31 ′ connected to the source gas supply source 21, and branch lines 31A, 31B, and 31C connected to the respective gas passage ports 11 of the adsorption towers 10A, 10B, and 10C. The branch lines 31A, 31B, and 31C are provided with valves (a valve having such a function is hereinafter referred to as an "automatic valve") 31a, 31b, and 31c that can be automatically switched between an open state and a closed state.

管線32具有設置有冷却器24以及氣液分離器25的主幹線32',以及個別連接於吸附塔10A、10B、10C的各氣體通過口11側的分支線32A、32B、32C。而且,在主幹線32'的比冷却器24更上游側設有廢氣槽23。主幹線32'的廢氣槽23與冷却器24之間設有壓力調節閥321。於分支線32A、32B、32C設有自動閥32a、32b、32c。 The line 32 includes a main line 32 ′ provided with a cooler 24 and a gas-liquid separator 25, and branch lines 32A, 32B, and 32C connected to the respective gas passage ports 11 of the adsorption towers 10A, 10B, and 10C. Further, an exhaust gas groove 23 is provided on the trunk line 32 ′ upstream of the cooler 24. A pressure regulating valve 321 is provided between the exhaust gas groove 23 of the main line 32 ′ and the cooler 24. The branch lines 32A, 32B, and 32C are provided with automatic valves 32a, 32b, and 32c.

管線33具有設置有製品儲存槽22的主幹線33',以及個別連接於吸附塔10A、10B、10C的各氣體通過口12側的分支線33A、33B、33C。於分支線33A、33B、33C設有自動閥33a、33b、33c。主幹線33'的製品儲存槽22的下游側設有壓力調節閥331。 The line 33 includes a main line 33 ′ provided with the product storage tank 22, and branch lines 33A, 33B, and 33C connected to the gas passage ports 12 of the adsorption towers 10A, 10B, and 10C, respectively. The branch lines 33A, 33B, and 33C are provided with automatic valves 33a, 33b, and 33c. A pressure regulating valve 331 is provided on the downstream side of the product storage tank 22 of the main line 33 '.

管線34用以將於管線33(主幹線33')通流的製品氣體的一部分供給至吸附塔10A、10B、10C,具有連接於管線33的主幹線33'之主幹線34',以及個別連接於吸附塔10A、10B、10C的各氣體通過口12側的分支線34A、34B、34C。於 主幹線34'設有自動閥341以及流量調整閥342。於分支線34A、34B、34C設有自動閥34a、34b、34c。 The line 34 is used to supply a part of the product gas flowing through the line 33 (the main line 33 ') to the adsorption towers 10A, 10B, and 10C, and a main line 34' having a main line 33 'connected to the line 33, and individual connections Each gas in the adsorption towers 10A, 10B, and 10C passes through branch lines 34A, 34B, and 34C on the side of the port 12. An automatic valve 341 and a flow adjustment valve 342 are provided on the main line 34 '. The branch lines 34A, 34B, and 34C are provided with automatic valves 34a, 34b, and 34c.

管線35用以互相連接吸附塔10A、10B、10C的任意兩者,具有連接於管線34的主幹線34'之主幹線35',以及個別連接於吸附塔10A、10B、10C的各氣體通過口12側的分支線35A、35B、35C。於主幹線35'設有自動閥351以及流量調整閥352。於分支線35A、35B、35C設有自動閥35a、35b、35c。 The pipeline 35 is used to connect any two of the adsorption towers 10A, 10B, and 10C to each other. The pipeline 35 has a trunk line 35 'connected to the trunk line 34' of the pipeline 34, and gas passages connected to the adsorption towers 10A, 10B, and 10C. The branch lines 35A, 35B, and 35C on the 12 side. An automatic valve 351 and a flow adjustment valve 352 are provided on the main line 35 '. The branch lines 35A, 35B, and 35C are provided with automatic valves 35a, 35b, and 35c.

使用具有以上構成的精製裝置X,能夠實施本發明的實施型態之氫的精製方法。於精製裝置X的運作中,藉由適當的切換自動閥31a~31c、32a~32c、33a~33c、34a~34c、35a~35c、341、351以及流量調整閥342、352,實現裝置內的所希望之氣體的流動狀態,並能夠重複以下的步驟1~9所構成的1循環。於本方法的1循環中,於個別吸附塔10A、10B、10C進行吸附工序、減壓工序、均壓減壓、脫附工序、清洗工序、均壓昇壓、以及昇壓工序。第2a圖~第2i圖為模式的表示步驟1~9的精製裝置X的氣體的流動狀態者。尚且,於第2a圖~第2i圖中,使用下述的代號。 The purification method X of the embodiment of the present invention can be performed using the purification device X having the above-mentioned configuration. In the operation of the refining device X, by automatically switching the automatic valves 31a to 31c, 32a to 32c, 33a to 33c, 34a to 34c, 35a to 35c, 341, and 351, and the flow adjustment valves 342 and 352, The desired gas flow state can be repeated in a cycle consisting of steps 1 to 9 below. In one cycle of the method, an adsorption step, a decompression step, a pressure equalization pressure reduction, a desorption step, a cleaning step, a pressure equalization pressure increase, and a pressure increase step are performed in individual adsorption towers 10A, 10B, and 10C. Figures 2a to 2i are patterns showing the flow state of the gas in the purification device X in steps 1 to 9. In addition, in Figs. 2a to 2i, the following symbols are used.

AS:吸附工序 AS: adsorption process

DP:減壓工序 DP: Decompression process

DS:脫附工序 DS: Desorption process

RN:清洗工序 RN: cleaning process

PR:昇壓工序 PR: Boost process

Eq-DP:均壓減壓工序 Eq-DP: Equal pressure decompression process

Eq-DR:均壓昇壓工序 Eq-DR: voltage equalization step-up process

步驟1將自動閥31a、33a、32b、34b、35c、351以及流量調整閥352開啟,達成第2a圖所示的氣體流動狀態。 Step 1 opens the automatic valves 31a, 33a, 32b, 34b, 35c, 351 and the flow adjustment valve 352 to achieve the gas flow state shown in FIG. 2a.

於吸附塔10A中,原料氣體經由管線31由氣體通過口11導入,進行吸附工序。處於吸附工序的吸附塔10A內維持規定的高壓狀態,原料氣體中主要是揮發性芳香族化合物被吸附塔10A內的吸附劑吸附。然後,由吸附塔10A的氣體通過口12側排出氫被濃縮的氣體(製品氣體)。該製品氣體經由分支線33A以及主幹線33'送至製品儲存槽22。而且,製品儲存槽22內的製品氣體經由壓力調節閥331而適當取出至系統外,利用於所希望的用途。 In the adsorption tower 10A, a raw material gas is introduced from a gas passage 11 through a line 31, and an adsorption process is performed. The predetermined high pressure state is maintained in the adsorption tower 10A in the adsorption process, and mainly volatile aromatic compounds in the raw material gas are adsorbed by the adsorbent in the adsorption tower 10A. Then, the hydrogen-concentrated gas (product gas) is discharged from the gas passage port 12 side of the adsorption tower 10A. The product gas is sent to the product storage tank 22 via the branch line 33A and the main line 33 '. The product gas in the product storage tank 22 is appropriately taken out of the system through the pressure regulating valve 331 and used for a desired application.

此處,關於導入至吸附塔10A的原料氣體中的揮發性芳香族的濃度並沒有特別的限制,但例如是100volppm~1vol%的程度。處於吸附工序的吸附塔10A的內部的最高壓力(吸附壓力)例如是0.1~1.0MPaG(G為表示為表壓,以下相同),較佳為0.5~0.8MPaG。 Here, the concentration of the volatile aromatics in the raw material gas introduced into the adsorption tower 10A is not particularly limited, but is, for example, about 100 vol ppm to 1 vol%. The maximum pressure (adsorption pressure) inside the adsorption tower 10A in the adsorption step is, for example, 0.1 to 1.0 MPaG (G is expressed as a gauge pressure, the same applies hereinafter), and preferably 0.5 to 0.8 MPaG.

而且,於步驟1吸附塔10B、10C個別的氣體通過口12經由管線34、35連通。如吸附塔10B先進行脫附工序,吸附塔10C先進行吸附工序(請參照第2i圖所示的步驟9),在步驟1開始時,吸附塔10C為塔內壓力比吸附塔10B高的狀態。然後,於步驟1開始後,吸附塔10C進行減壓工序,吸附塔10C的塔內殘留之雜質濃度低的氣體(殘留濃縮氫氣)由氣體通過口12排出,塔內壓力降低。步驟1的開始時與結束時的吸附塔10C的塔內壓力之差值,例如是300kPa的程度。另 一方面,吸附塔10B進行清洗工序,由吸附塔10C排出的殘留濃縮氫氣經由管線35、流量調整閥352以及管線34而作為清洗氣體並由氣體通過口12導入,並且排出塔內的殘留氣體。此處由吸附塔10B排出的氣體,係為揮發性芳香族化合物的濃度高的氣體,該氣體作為廢氣而經由管線32送至廢氣槽23。於步驟1的結束時,吸附塔10C的塔內壓力比吸附塔10B的塔內壓力高。步驟1的操作時間例如是75秒的程度。 In addition, the individual gas passage ports 12 of the adsorption towers 10B and 10C communicate with each other through the lines 34 and 35 in step 1. For example, if the adsorption tower 10B first performs the desorption step, and the adsorption tower 10C first performs the adsorption step (refer to step 9 shown in FIG. 2i), at the beginning of step 1, the pressure in the adsorption tower 10C is higher than that in the adsorption tower 10B. . Then, after the step 1 starts, the adsorption tower 10C is subjected to a decompression process. A gas having a low impurity concentration (residual concentrated hydrogen) remaining in the tower of the adsorption tower 10C is discharged from the gas passage 12 and the pressure in the tower is reduced. The difference between the pressure in the column of the adsorption column 10C at the beginning and the end of step 1 is, for example, about 300 kPa. On the other hand, the adsorption tower 10B is subjected to a cleaning process. The residual concentrated hydrogen discharged from the adsorption tower 10C is introduced as a cleaning gas through the line 35, the flow adjustment valve 352, and the line 34, and is introduced through the gas passage port 12, and the residual gas in the tower is discharged. . Here, the gas discharged from the adsorption tower 10B is a gas having a high concentration of volatile aromatic compounds, and the gas is sent to the exhaust gas tank 23 via the line 32 as the exhaust gas. At the end of step 1, the internal pressure of the adsorption tower 10C is higher than the internal pressure of the adsorption tower 10B. The operation time of step 1 is, for example, about 75 seconds.

步驟2將自動閥31a、33a、34b、35c、351以及流量調整閥352開啟,達成第2b圖所示的氣體流動狀態。 In step 2, the automatic valves 31a, 33a, 34b, 35c, and 351 and the flow adjustment valve 352 are opened to achieve the gas flow state shown in FIG. 2b.

步驟2於吸附塔10A中繼續進行吸附工序。而且,於步驟2中吸附塔10B、10C個別的氣體通過口12、12亦經由管線34、35連通。另一方面,吸附塔10B將自動閥32b關閉。然後,於步驟2開始時,吸附塔10C的塔內仍然比吸附塔10B的塔內更為高壓。因此吸附塔10C進行均壓減壓,吸附塔10B進行均壓昇壓。更具體而言,吸附塔10C的塔內氣體經由管線35、34導入吸附塔10B,在使吸附塔10的塔內減壓的同時,使吸附塔10B的塔內昇壓。其結果,於吸附塔10B、10C中的內部壓力實質成為相等。步驟2的操作時間例如是15秒的程度。 Step 2 continues the adsorption process in the adsorption tower 10A. Moreover, the individual gas passage ports 12 and 12 of the adsorption towers 10B and 10C are also communicated through the lines 34 and 35 in step 2. On the other hand, the adsorption tower 10B closes the automatic valve 32b. Then, at the beginning of step 2, the inside of the adsorption tower 10C is still higher in pressure than the inside of the adsorption tower 10B. Therefore, the adsorption tower 10C performs pressure equalization and pressure reduction, and the adsorption tower 10B performs pressure equalization and pressure increase. More specifically, the gas in the column of the adsorption column 10C is introduced into the adsorption column 10B through the lines 35 and 34, and the pressure in the column of the adsorption column 10 is reduced while the pressure in the column of the adsorption column 10B is increased. As a result, the internal pressures in the adsorption towers 10B and 10C become substantially equal. The operation time of step 2 is, for example, about 15 seconds.

步驟3將自動閥31a、33a、34b、32c、341以及流量調整閥342開啟,達成第2c圖所示的氣體流動狀態。 In step 3, the automatic valves 31a, 33a, 34b, 32c, and 341 and the flow adjustment valve 342 are opened to achieve the gas flow state shown in FIG. 2c.

步驟3於吸附塔10A中繼續進行吸附工序。進而,步驟3遮斷吸附塔10B、10C的連通,另一方面,將由吸附塔10A的氣體通過口12排出的製品氣體的一部分經由管線34以 及流量調整閥342導入吸附塔10B,以進行吸附塔10B的昇壓工序。 Step 3 continues the adsorption process in the adsorption tower 10A. Further, step 3 blocks the communication between the adsorption towers 10B and 10C. On the other hand, a part of the product gas discharged from the gas passage port 12 of the adsorption tower 10A is introduced into the adsorption tower 10B through the line 34 and the flow adjustment valve 342 to perform the adsorption tower. 10B step-up process.

而且,於步驟3中,對於吸附塔10C藉由開啟自動閥32c而經由管線32與廢氣槽23連通。依此,吸附塔10C進行脫附工序,吸附塔10C的塔內減壓且將雜質(主要是揮發性芳香族化合物)由吸附劑脫附,塔內的氣體(揮發性芳香族化合物的濃度高的氣體)通過氣體通過口11而作為廢氣排出塔外。處於脫附工序的吸附塔10C的內部的最低壓力(脫附壓力)例如是0~50kPaG,較佳為0~20kPaG。由吸附塔10C所排出廢氣經由管線32送至廢氣槽23。廢氣槽23內的氣體經由壓力調節閥321而適當送至冷却器24,進而通過氣液分離器25,藉此將揮發性芳香族化合物液化,並能夠作為液相回收。步驟3的操作時間例如是135秒的程度。上述步驟1~3相當於依照步驟1~9所構成的循環的1/3,此些步驟1~3的工序時間合計為225秒的程度。 Further, in step 3, the adsorption tower 10C communicates with the exhaust gas tank 23 through the line 32 by opening the automatic valve 32c. Accordingly, the desorption step of the adsorption tower 10C is performed. The pressure in the adsorption tower 10C is reduced, and impurities (mainly volatile aromatic compounds) are desorbed from the adsorbent. The gas (volatile aromatic compound concentration in the tower is high). Gas) is discharged out of the tower as exhaust gas through the gas passage port 11. The minimum pressure (desorption pressure) inside the adsorption tower 10C in the desorption step is, for example, 0 to 50 kPaG, and preferably 0 to 20 kPaG. The exhaust gas discharged from the adsorption tower 10C is sent to the exhaust gas tank 23 through a line 32. The gas in the exhaust gas tank 23 is appropriately sent to the cooler 24 through the pressure regulating valve 321, and then passed through the gas-liquid separator 25 to liquefy the volatile aromatic compound and recover it as a liquid phase. The operation time of step 3 is, for example, about 135 seconds. The above steps 1 to 3 correspond to 1/3 of the cycle formed according to steps 1 to 9, and the total process time of these steps 1 to 3 is about 225 seconds.

後續的步驟4~6,如第2d圖~第2f圖所示,對吸附塔10B進行於步驟1~3中對吸附塔10A進行的操作,對吸附塔10C進行於步驟1~3中對吸附塔10B進行的操作,對吸附塔10A進行於步驟1~3中對吸附塔10C進行的操作。 In the subsequent steps 4 to 6, as shown in Figs. 2d to 2f, the adsorption tower 10B is subjected to the operation of the adsorption tower 10A in steps 1 to 3, and the adsorption tower 10C is subjected to the adsorption in steps 1 to 3 In the operation performed on the column 10B, the operation performed on the adsorption column 10C in steps 1 to 3 is performed on the adsorption column 10A.

步驟4將自動閥31b、33b、32c、34c、35a、351以及流量調整閥352開啟,達成第2d圖所示的氣體流動狀態。步驟5將自動閥31b、33b、34c、35a、351以及流量調整閥352開啟,達成第2e圖所示的氣體流動狀態。步驟6將自動閥31b、33b、34c、32a、341以及流量調整閥342開啟,達成第2f圖 所示的氣體流動狀態。雖然省略詳細說明,於步驟4、5、6中,吸附塔10A依序進行與步驟1、2、3中的吸附塔10C相同的操作,吸附塔10B依序進行與步驟1、2、3中的吸附塔10A相同的操作,吸附塔10C依序進行與步驟1、2、3中的吸附塔10B相同的操作。 Step 4 opens the automatic valves 31b, 33b, 32c, 34c, 35a, 351 and the flow adjustment valve 352 to achieve the gas flow state shown in FIG. 2d. Step 5 opens the automatic valves 31b, 33b, 34c, 35a, and 351 and the flow adjustment valve 352 to achieve the gas flow state shown in FIG. 2e. Step 6 opens the automatic valves 31b, 33b, 34c, 32a, and 341 and the flow adjustment valve 342 to achieve the gas flow state shown in Fig. 2f. Although detailed description is omitted, in steps 4, 5, and 6, the adsorption tower 10A performs the same operation as the adsorption tower 10C in steps 1, 2, and 3 in sequence, and the adsorption tower 10B performs the same operations in steps 1, 2, and 3 in sequence. The same operation of the adsorption tower 10A is performed, and the adsorption tower 10C sequentially performs the same operation as the adsorption tower 10B in steps 1, 2, and 3.

後續的步驟7~9,如第2g圖~第2i圖所示,對吸附塔10C進行於步驟1~3中對吸附塔10A進行的操作,對吸附塔10A進行於步驟1~3中對吸附塔10B進行的操作,對吸附塔10B進行於步驟1~3中對吸附塔10C進行的操作。 In the subsequent steps 7 to 9, as shown in Figs. 2g to 2i, the adsorption tower 10C is subjected to the operation of the adsorption tower 10A in steps 1 to 3, and the adsorption tower 10A is subjected to the adsorption in steps 1 to 3 In the operation performed on the column 10B, the operation performed on the adsorption column 10C in steps 1 to 3 is performed on the adsorption column 10B.

步驟7將自動閥31c、33c、32a、34a、35b、351以及流量調整閥352開啟,達成第2g圖所示的氣體流動狀態。步驟8將自動閥31c、33c、34a、35b、351以及流量調整閥352開啟,達成第2h圖所示的氣體流動狀態。步驟9將自動閥31c、33c、34a、32b、341以及流量調整閥342開啟,達成第2i圖所示的氣體流動狀態。雖然省略詳細說明,於步驟7、8、9中,吸附塔10A依序進行與步驟1、2、3中的吸附塔10B相同的操作,吸附塔10B依序進行與步驟1、2、3中的吸附塔10C相同的操作,吸附塔10C依序進行與步驟1、2、3中的吸附塔10A相同的操作。 In step 7, the automatic valves 31c, 33c, 32a, 34a, 35b, and 351 and the flow adjustment valve 352 are opened to achieve the gas flow state shown in FIG. 2g. Step 8 opens the automatic valves 31c, 33c, 34a, 35b, and 351 and the flow adjustment valve 352 to achieve the gas flow state shown in FIG. 2h. Step 9 opens the automatic valves 31c, 33c, 34a, 32b, 341 and the flow adjustment valve 342 to achieve the gas flow state shown in FIG. 2i. Although detailed description is omitted, in steps 7, 8, and 9, the adsorption tower 10A sequentially performs the same operation as the adsorption tower 10B in steps 1, 2, and 3, and the adsorption tower 10B performs the same operations as in steps 1, 2, and 3 in sequence. The same operation of the adsorption tower 10C is performed, and the adsorption tower 10C sequentially performs the same operation as the adsorption tower 10A in steps 1, 2, and 3.

然後,藉由將以上的步驟1~9構成的循環於個別的吸附塔10A、10B、10C重複進行,將原料氣體連續的導入吸附體10A、10B、10C的其中任一,而且連續的取得濃縮氫氣(製品氣體)。 Then, by repeating the above-mentioned steps 1 to 9 in the individual adsorption towers 10A, 10B, and 10C, the source gas is continuously introduced into any of the adsorbents 10A, 10B, and 10C, and the concentration is continuously obtained. Hydrogen (product gas).

於本實施型態的氫的精製方法中,關於個別的吸 附塔10A、10B、10C中所實施的依照PSA法的1循環,在吸附工序之後,塔內的殘留氣體導入脫附工序後的其他吸附塔,進行清洗工序。吸附工序結束後的吸附塔內的氣體為雜質濃度低的氣體(殘留濃縮氫氣),能夠使用該氣體效率良好的清洗脫附工序後的吸附塔。而且,由於製品氣體不使用於清洗,因此能夠抑制氫的回收率降低。 In the method for purifying hydrogen of this embodiment, regarding the 1 cycle of the PSA method implemented in each of the individual adsorption towers 10A, 10B, and 10C, after the adsorption step, the residual gas in the column is introduced into the other after the desorption step. The adsorption tower performs a cleaning step. The gas in the adsorption tower after the completion of the adsorption step is a gas having a low impurity concentration (residual concentrated hydrogen), and the adsorption tower after the desorption step can be cleaned with this gas efficiently. In addition, since the product gas is not used for cleaning, it is possible to suppress a decrease in the recovery rate of hydrogen.

關於各吸附塔10A、10B、10C所填充的吸附劑,於原料氣體的流動方向中的最上游側,填充有矽膠系吸附劑作為第1吸附劑131。矽膠系吸附劑在0.1~1.0MPaG(=100~1000kPaG)的高壓之雜質(揮發性芳香族化合物)的吸附能優異,即使於大氣壓以上的0~50kPaG的最低壓力(脫附工序)亦可能脫附揮發性芳香族化合物並再生。此第1吸附劑131使用吸附劑填充容量整體的15~75vol%。依此結果,能夠效率良好的吸附去除揮發性芳香族化合物,而且由於不需要真空設備,能夠期望削減成本。而且,如使用親水性矽膠作為第1吸附劑131,能夠不進行前處理而適當的吸附去除揮發性芳香族化合物,有利於成本削減。 The adsorbent filled in each of the adsorption towers 10A, 10B, and 10C is filled with a silicone-based adsorbent as the first adsorbent 131 on the most upstream side in the flow direction of the source gas. Silicone-based adsorbents have excellent adsorption energy for impurities (volatile aromatic compounds) at high pressures of 0.1 to 1.0 MPaG (= 100 to 1000 kPaG), and may be desorbed even at a minimum pressure of 0 to 50 kPaG (desorption step) above atmospheric pressure. Attach volatile aromatic compounds and regenerate. The first adsorbent 131 is filled with 15 to 75 vol% of the entire adsorbent capacity. As a result, volatile aromatic compounds can be efficiently removed by adsorption, and since vacuum equipment is not required, cost reduction can be expected. In addition, if a hydrophilic silicone is used as the first adsorbent 131, volatile aromatic compounds can be removed by appropriate adsorption without pretreatment, which is advantageous for cost reduction.

尚且,第1吸附劑131的填充比率如未滿15vol%,具有無法充分去除揮發性芳香族化合物的疑慮。另一方面,第1吸附劑131的填充比率超過75vol%的話,第2吸附劑132以及第3吸附劑133中殘留的清洗氣體的比例降低,具有清洗氣體量減少而清洗工序的清洗變得不充分之疑慮。 In addition, if the filling ratio of the first adsorbent 131 is less than 15 vol%, there is a concern that volatile aromatic compounds cannot be sufficiently removed. On the other hand, if the filling ratio of the first adsorbent 131 exceeds 75 vol%, the proportion of the cleaning gas remaining in the second adsorbent 132 and the third adsorbent 133 is reduced, the amount of the cleaning gas is reduced, and the cleaning in the cleaning step is not performed. Full of doubts.

在積層於第1吸附劑131的後段(下游側)之第2吸附劑132(沸石系吸附劑)以及第3吸附劑133(活性碳系 吸附劑)中,不吸附揮發性芳香族化合物。亦即是,吸附工序在第1吸附劑131的揮發性芳香族化合物飽和之前結束,第2吸附劑132以及第3吸附劑133實質並不吸附揮發性芳香族化合物。另一方面,第2吸附劑132以及第3吸附劑133相較於第1吸附劑而吸附更多的氫。依此,由吸附工序結束而處於減壓工序的吸附塔排出、並使用於脫附工序結束而處於清洗工序的其他吸附塔之清洗氣體,除了減壓工序開始時殘留於塔內的濃縮氫氣(主要是接近氣體通過口12、第2吸附劑132以及第3吸附劑133的填充區域之氣體)之外,亦加上由第2吸附劑132以及第3吸附劑133脫附的氫。其結果,能夠使用氫含量高的清洗氣體有效的清洗脫附工序結束後的吸附塔。 The second adsorbent 132 (zeolite-based adsorbent) and the third adsorbent 133 (activated carbon-based adsorbent) laminated on the rear stage (downstream side) of the first adsorbent 131 do not adsorb volatile aromatic compounds. That is, the adsorption step is completed before the volatile aromatic compounds of the first adsorbent 131 are saturated, and the second adsorbent 132 and the third adsorbent 133 do not substantially adsorb the volatile aromatic compounds. On the other hand, the second adsorbent 132 and the third adsorbent 133 adsorb more hydrogen than the first adsorbent. As a result, the adsorption gas discharged from the adsorption tower in the decompression step after the adsorption step is completed, and the purge gas of other adsorption towers used in the desorption step and in the cleaning step are removed, except for the concentrated hydrogen gas remaining in the column at the start of the decompression step ( It is mainly the gas close to the gas passage 12, the filled area of the second adsorbent 132, and the third adsorbent 133), and hydrogen desorbed by the second adsorbent 132 and the third adsorbent 133 is also added. As a result, the adsorption tower after the completion of the desorption step can be efficiently cleaned using a purge gas having a high hydrogen content.

以上對本發明的具體實施型態進行說明,但本發明並不限定於此,在不脫離發明的思想的範圍內可進行種種的變更。例如是,關於成為實施本發明的氫或氦之精製方法之裝置的氣體流路的管線(配管)的構成,亦可採用與上述實施型態相異的構成。吸附塔的數量並不僅限定為上述實施型態所示的3塔式,4塔以上的情形亦可以期待同樣的效果。 The specific embodiments of the present invention have been described above, but the present invention is not limited to this, and various changes can be made without departing from the spirit of the invention. For example, regarding the configuration of the pipeline (piping) of the gas flow path serving as a device for implementing the method for purifying hydrogen or helium according to the present invention, a configuration different from the above-described embodiment may be adopted. The number of adsorption towers is not limited to the three tower type shown in the above embodiment, and the same effect can be expected in the case of four or more towers.

而且,上述實施型態是以精製氫的情形進行說明,本發明的精製方法所使用的吸附劑(第1吸附劑、第2吸附劑、第3吸附劑)對氦的吸附能與氫略相同。因此,即使是由包含主成分為氦以及雜質為揮發性芳香族化合物之原料氣體濃縮精製氦的情形,亦可產生與上述實施型態相同的效果。 In addition, the above embodiment is described in the case of purifying hydrogen. The adsorbent (the first adsorbent, the second adsorbent, and the third adsorbent) used by the refining method of the present invention has a helium adsorption energy that is slightly the same as that of hydrogen. . Therefore, even in the case of condensing and purifying helium from a source gas containing helium as a main component and volatile aromatic compounds as impurities, the same effects as those of the above embodiment can be produced.

【實施例】     [Example]    

其次,藉由實施例以及比較例說明本發明的有用 性。 Next, the usefulness of the present invention will be described with examples and comparative examples.

[實施例1] [Example 1]

本實施例使用第1圖所示的精製裝置X,藉由利用參照第2圖說明的各步驟所構成的變壓吸附法(PSA法)之精製方法,在下述所示的條件下,由原料氣體取得濃縮氫氣作為製品氣體。 In this embodiment, the purification apparatus X shown in FIG. 1 is used, and the purification method using the pressure swing adsorption method (PSA method) constituted by each step described with reference to FIG. 2 is used. The gas is obtained as concentrated hydrogen as a product gas.

作為吸附塔10A、10B、10C,使用內徑35mm的圓筒狀者,吸附劑的填充容量約1L(公升)。於各吸附塔10A、10B、10C內,由氣體通過口11向氣體通過口12依序積層填充矽膠B型(富士silysia化學公司製富士矽膠B型)作為第1吸附劑131,CaA型沸石(Union昭和公司製5AHP)作為第2吸附劑132,以及活性碳(Cataler公司製PGAR)作為第3吸附劑。此些吸附劑的填充比率(體積比例)為第1吸附劑131為30vol%,第2吸附劑132為60vol%,第3吸附劑133為10vol%。關於原料氣體,使用含有8500volppm的甲苯作為雜質之粗氫氣,該原料氣體以5.2NL/min的流量供給。PSA法的操作條件為,吸附塔等的溫度為40℃,吸附壓力為0.8MPaG,脫附壓力為20kPaG,清洗壓力差為300kPa,循環時間(步驟1~9所構成的1循環的時間)為675秒。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為定量下限以下(0.1volppm以下),氫氣回收率為75%。本實施例的結果表示於第1表。 As the adsorption towers 10A, 10B, and 10C, a cylindrical shape having an inner diameter of 35 mm was used, and the filling capacity of the adsorbent was about 1 L (liter). In each of the adsorption towers 10A, 10B, and 10C, a silicone rubber type B (Fuji silicone rubber type B manufactured by Fuji silysia Chemical Co., Ltd.) is sequentially laminated and filled from a gas passage 11 to a gas passage 12 as a first adsorbent 131, and a CaA zeolite ( 5AHP manufactured by Union Showa Corporation) was used as the second adsorbent 132, and activated carbon (PGAR manufactured by Cataler Corporation) was used as the third adsorbent. The filling ratio (volume ratio) of these adsorbents is 30 vol% for the first adsorbent 131, 60 vol% for the second adsorbent 132, and 10 vol% for the third adsorbent 133. As the raw material gas, crude hydrogen containing 8500 vol ppm of toluene as an impurity was used, and the raw material gas was supplied at a flow rate of 5.2 NL / min. The operating conditions of the PSA method are that the temperature of the adsorption tower, etc. is 40 ° C, the adsorption pressure is 0.8 MPaG, the desorption pressure is 20 kPaG, the cleaning pressure difference is 300 kPa, and the cycle time (the time of 1 cycle composed of steps 1 to 9) is 675 seconds. The impurity concentration of the obtained concentrated hydrogen (product gas) was measured by a flame ionization detector (FID). The toluene concentration in the product gas was below the lower limit of quantification (0.1 volppm or less), and the hydrogen recovery rate was 75%. The results of this example are shown in Table 1.

[實施例2] [Example 2]

除了吸附劑的填充比率為第1吸附劑131為40vol%,第2 吸附劑132為50vol%,第3吸附劑133為10vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為定量下限以下(0.1volppm以下),氫氣回收率為70%。本實施例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 40 vol% for the first adsorbent 131, 50 vol% for the second adsorbent 132, and 10 vol% for the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen (product gas) was measured by a flame ionization detector (FID). The toluene concentration in the product gas was below the lower limit of quantification (0.1 volppm or less), and the hydrogen recovery rate was 70%. The results of this example are shown in Table 1.

[實施例3] [Example 3]

除了吸附劑的填充比率為第1吸附劑131為20vol%,第2吸附劑132為70vol%,第3吸附劑133為10vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為定量下限以下(0.1volppm以下),氫氣回收率為80%。本實施例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 20 vol% for the first adsorbent 131, 70 vol% for the second adsorbent 132, and 10 vol% for the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen (product gas) was measured by a flame ionization detector (FID). The toluene concentration in the product gas was below the lower limit of quantification (0.1 volppm or less), and the hydrogen recovery rate was 80%. The results of this example are shown in Table 1.

[實施例4] [Example 4]

除了吸附劑的填充比率為第1吸附劑131為70vol%,第2吸附劑132為20vol%,第3吸附劑133為10vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為0.67volppm,氫氣回收率為92%。本實施例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 70 vol% for the first adsorbent 131, 20 vol% for the second adsorbent 132, and 10 vol% for the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen gas (product gas) was measured by a flame ionization detector (FID). The toluene concentration in the product gas was 0.67 volppm, and the hydrogen recovery rate was 92%. The results of this example are shown in Table 1.

[實施例5] [Example 5]

除了吸附劑的填充比率為第1吸附劑131為30vol%,第2吸附劑132為40vol%,第3吸附劑133為30vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定, 製品氣體中的甲苯濃度為0.43volppm,氫氣回收率為85%。本實施例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 30 vol% for the first adsorbent 131, 40 vol% for the second adsorbent 132, and 30 vol% for the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen gas (product gas) was measured with a flame ionization detector (FID). The toluene concentration in the product gas was 0.43 volppm, and the hydrogen recovery rate was 85%. The results of this example are shown in Table 1.

[比較例1] [Comparative Example 1]

除了吸附劑的填充比率為第1吸附劑131為80vol%,第2吸附劑132為10vol%,第3吸附劑133為10vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為2000volppm,氫氣回收率為90%。本比較例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 80 vol% for the first adsorbent 131, 10 vol% for the second adsorbent 132, and 10 vol% for the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen (product gas) was measured with a flame ionization detector (FID). The toluene concentration in the product gas was 2000 volppm, and the hydrogen recovery rate was 90%. The results of this comparative example are shown in Table 1.

[比較例2] [Comparative Example 2]

除了吸附劑的填充比率為第1吸附劑131為10vol%,第2吸附劑132為80vol%,第3吸附劑133為10vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為3000volppm,氫氣回收率為75%。本比較例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 10 vol% for the first adsorbent 131, 80 vol% for the second adsorbent 132, and 10 vol% for the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen (product gas) was measured by a flame ionization detector (FID). The toluene concentration in the product gas was 3000 volppm, and the hydrogen recovery rate was 75%. The results of this comparative example are shown in Table 1.

[比較例3] [Comparative Example 3]

除了吸附劑的填充比率為第1吸附劑131為30vol%,第2吸附劑132為30vol%,第3吸附劑133為40vol%以外,與實施例1相同的進行由原料氣體精製氫。而且,所得的濃縮氫氣(製品氣體)的雜質濃度以火焰離子化檢測器(FID)測定,製品氣體中的甲苯濃度為2volppm,氫氣回收率為75%。本比較例的結果表示於第1表。 Hydrogen was purified from the source gas in the same manner as in Example 1 except that the filling ratio of the adsorbent was 30 vol% of the first adsorbent 131, 30 vol% of the second adsorbent 132, and 40 vol% of the third adsorbent 133. The impurity concentration of the obtained concentrated hydrogen (product gas) was measured by a flame ionization detector (FID). The toluene concentration in the product gas was 2 volppm, and the hydrogen recovery rate was 75%. The results of this comparative example are shown in Table 1.

【第1表】 [Table 1]     

由第1表可明瞭,如依上述各實施例,確認能夠高純度的精製氫氣。 As is clear from the first table, it was confirmed that the high-purity purified hydrogen can be obtained according to the above-mentioned examples.

Claims (11)

一種氫或氦之精製方法,其為藉由使用填充有吸附劑的3塔以上的吸附塔而對各吸附塔重複進行變壓吸附法之循環,而由包含揮發性芳香族化合物作為雜質且包含氫或氦作為主成分的原料氣體精製氫或氦之方法,前述循環包含:吸附工序,使上述吸附塔於規定的高壓之狀態,於上述吸附塔導入上述原料氣體而使該原料氣體中的上述揮發性芳香族化合物吸附於上述吸附劑,由該吸附塔排出氫或氦的濃度高的製品氣體;減壓工序,由結束上述吸附工序的上述吸附塔排出塔內殘留的氣體以使塔內的壓力降低;脫附工序,由結束上述減壓工序的上述吸附塔之上述吸附劑使上述揮發性芳香族化合物脫附,排出塔內氣體;以及清洗工序,將由處於上述減壓工序的其他吸附塔排出的氣體導入結束上述脫附工序的上述吸附塔,以將塔內殘留的氣體排出,上述各吸附塔於上述吸附塔的上述原料氣體的流動方向由上游側向下游側依序區分為第1區域、第2區域以及第3區域,相對於上述吸附劑的填充容量整體,於上述第1區域填充有填充比率為15~75vol%的範圍之矽膠系的第1吸附劑,於上述第2區域填充有填充比率為15~75vol%的範圍之沸石系的第2吸附劑,於上述第3區域填充有填充比率為5~30vol%的範圍之活性碳系的第3吸附劑。     A method for refining hydrogen or helium by repeating a pressure swing adsorption cycle for each adsorption tower by using three or more towers filled with an adsorbent, and comprising a volatile aromatic compound as an impurity and containing A method for refining hydrogen or helium as a source gas with hydrogen or helium as a main component, the cycle includes an adsorption step of bringing the adsorption tower to a predetermined high pressure state, and introducing the source gas into the adsorption tower to make the above in the source gas A volatile aromatic compound is adsorbed on the adsorbent, and a product gas having a high concentration of hydrogen or helium is exhausted from the adsorption tower; in a decompression step, the gas remaining in the tower is exhausted from the adsorption tower that ends the adsorption step to make Pressure reduction; in a desorption step, the volatile aromatic compound is desorbed by the adsorbent in the adsorption tower that has completed the decompression step, and the gas in the tower is exhausted; and a cleaning step is performed by other adsorption towers in the decompression step. The exhausted gas is introduced into the adsorption tower that has completed the desorption step to exhaust the gas remaining in the tower. Each of the adsorption towers The flow direction of the raw material gas in the adsorption tower is sequentially divided into a first region, a second region, and a third region from the upstream side to the downstream side. The first region is filled with the entire filling capacity of the adsorbent. The silica-based first adsorbent having a filling ratio in the range of 15 to 75 vol% is filled with a zeolite-based second adsorbent having a filling ratio in the range of 15 to 75 vol% and the third area is filled with An activated carbon-based third adsorbent having a filling ratio in the range of 5 to 30 vol%.     如申請專利範圍第1項所述的氫或氦之精製方法,其中上 述第1吸附劑包含親水性矽膠。     The method for purifying hydrogen or helium according to item 1 of the patent application range, wherein the first adsorbent contains a hydrophilic silicone.     如申請專利範圍第1項所述的氫或氦之精製方法,其中上述第2吸附劑包含CaA型沸石。     The method for purifying hydrogen or helium according to item 1 of the scope of patent application, wherein the second adsorbent contains a CaA zeolite.     如申請專利範圍第1項所述的氫或氦之精製方法,其中上述第3吸附劑包含椰子殼活性碳或石碳活性碳。     The method for purifying hydrogen or helium according to item 1 of the scope of patent application, wherein the third adsorbent contains coconut shell activated carbon or stone carbon activated carbon.     如申請專利範圍第1項所述的氫或氦之精製方法,其中上述清洗工序與上述吸附工序之間更包含昇壓工序,用以提高上述吸附塔的壓力至規定的吸附壓力。     The method for purifying hydrogen or helium according to item 1 of the scope of the patent application, wherein the cleaning step and the adsorption step further include a step-up step to increase the pressure of the adsorption tower to a predetermined adsorption pressure.     如申請專利範圍第5項所述的氫或氦之精製方法,其中上述減壓工序包含第1減壓步驟,將由上述吸附塔排出的殘留氣體作為清洗氣體而導入處於上述清洗工序的其他吸附塔;以及第2減壓步驟,接續該第1減壓步驟,將由上述吸附塔排出的殘留氣體導入處於上述昇壓工序的其他吸附塔。     The method for purifying hydrogen or helium according to item 5 of the scope of patent application, wherein the decompression step includes a first decompression step, and the residual gas discharged from the adsorption tower is used as a purge gas to be introduced into another adsorption tower in the purge step. And a second decompression step, following the first decompression step, the residual gas discharged from the adsorption tower is introduced into another adsorption tower that is in the pressure increasing step.     如申請專利範圍第6項所述的氫或氦之精製方法,其中上述昇壓工序包含第1昇壓步驟,將由處於上述第1減壓步驟的其他吸附塔排出的殘留氣體導入上述吸附塔;以及第2昇壓步驟,接續該第1昇壓步驟,將來自於處於上述吸附工序的其他吸附塔的製品氣體的一部分導入上述吸附塔。     The method for purifying hydrogen or helium according to item 6 of the scope of the patent application, wherein the pressure increasing step includes a first pressure increasing step, and the residual gas discharged from other adsorption towers in the first pressure reducing step is introduced into the adsorption tower; And the second pressure increasing step, following the first pressure increasing step, introducing a part of the product gas from another adsorption tower in the adsorption step into the adsorption tower.     一種氫或氦之精製裝置,其為用以由包含揮發性芳香族化合物作為雜質且包含氫或氦作為主成分的原料氣體精製氫或氦之裝置,該裝置具備:3塔以上的吸附塔,個別具有第1氣體通過口以及第2氣體通過口,於該第1氣體通過口與第2氣體通過口之間填充 有吸附劑;儲存槽,用於儲存製品氣體;氣液分離手段,將由上述吸附塔的上述第1氣體通過口排出的氣體分離為氣相成分以及液相成分;第1管線,具有連接於原料氣體供給源的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第1氣體通過口側且個別設置有開關閥的複數分支線;第2管線,具有設置有上述氣液分離手段的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第1氣體通過口側且個別設置有開關閥的複數分支線;第3管線,具有設置有上述儲存槽的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第2氣體通過口側且個別設置有開關閥的複數分支線;第4管線,具有連接於上述第3管線之上述主幹線的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第2氣體通過口側且個別設置有開關閥的複數分支線;以及第5管線,具有連接於上述第4管線之上述主幹線的主幹線,以及個別設置於上述吸附塔並連接於該吸附塔的上述第2氣體通過口側且個別設置有開關閥的複數分支線,上述各吸附塔於上述吸附塔的由上述第1氣體通過口向上述第2氣體通過口依序區分為第1區域、第2區域以及第3區域,相對於上述吸附劑的填充容量整體,於上述第1區域填充有填充比率為15~75vol%的範圍之矽膠系的第1吸 附劑,於上述第2區域填充有填充比率為15~75vol%的範圍之沸石系的第2吸附劑,於上述第3區域填充有填充比率為5~30vol%的範圍之活性碳系的第3吸附劑。     A refining device for hydrogen or helium is a device for refining hydrogen or helium from a source gas containing volatile aromatic compounds as impurities and containing hydrogen or helium as a main component. The device includes: an adsorption tower of 3 or more towers, Each has a first gas passage and a second gas passage, and an adsorbent is filled between the first gas passage and the second gas passage; a storage tank for storing the product gas; a gas-liquid separation means will be described above The gas discharged from the first gas passage port of the adsorption tower is separated into a gas phase component and a liquid phase component. The first line has a main line connected to a source gas supply source, and is individually installed in the adsorption tower and connected to the adsorption tower. The above-mentioned first gas passes through a plurality of branch lines on the port side and each is individually provided with an on-off valve; the second line includes a main line provided with the above-mentioned gas-liquid separation means, and the above-mentioned separately installed in the adsorption tower and connected to the adsorption tower The first gas passes through a plurality of branch lines on the port side, each of which is provided with an on-off valve; the third line includes a trunk line provided with the storage tank; A plurality of branch lines of the adsorption tower and the second gas passing port connected to the adsorption tower, each of which is provided with an on-off valve; a fourth pipeline having a trunk line connected to the trunk line of the third pipeline; A plurality of branch lines provided on the adsorption tower and connected to the adsorption tower, the second gas passing port side being individually provided with an on-off valve; and a fifth line having a main line connected to the main line connected to the fourth line, and A plurality of branch lines that are individually installed in the adsorption tower and connected to the second gas passage opening side of the adsorption tower and are individually provided with on-off valves, and each of the adsorption towers passes from the first gas passage opening to the first gas passage opening in the adsorption tower. The 2 gas is sequentially divided into a first region, a second region, and a third region through the mouth. The first region is filled with a silicone-based resin having a filling ratio in a range of 15 to 75 vol% with respect to the entire filling capacity of the adsorbent. The first adsorbent is filled with a zeolite-based second adsorbent in a range of 15 to 75 vol% in the second region, and the third absorbent is filled in a range of 5 to 30 vol%. A third adsorbent of activated carbon.     如申請專利範圍第8項所述的氫或氦之精製裝置,其中上述第1吸附劑由親水性矽膠而成。     The hydrogen or helium refining device according to item 8 of the scope of patent application, wherein the first adsorbent is made of hydrophilic silicone.     如申請專利範圍第8項所述的氫或氦之精製裝置,其中上述第2吸附劑包含CaA型沸石。     The hydrogen or helium purification device according to item 8 of the scope of the patent application, wherein the second adsorbent contains a CaA zeolite.     如申請專利範圍第8項所述的氫或氦之精製裝置,其中上述第3吸附劑包含椰子殼活性碳或石碳活性碳。     The hydrogen or helium refining device according to item 8 of the scope of the patent application, wherein the third adsorbent contains coconut shell activated carbon or stone carbon activated carbon.    
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