TW201818066A - Scratch detection method enabling to differentiate scribe lines from scratches and detect scratches appropriately - Google Patents

Scratch detection method enabling to differentiate scribe lines from scratches and detect scratches appropriately Download PDF

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TW201818066A
TW201818066A TW106133400A TW106133400A TW201818066A TW 201818066 A TW201818066 A TW 201818066A TW 106133400 A TW106133400 A TW 106133400A TW 106133400 A TW106133400 A TW 106133400A TW 201818066 A TW201818066 A TW 201818066A
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wafer
scratches
grinding
division
image
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TW106133400A
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TWI733909B (en
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吉田真司
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日商迪思科股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/89Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/892Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

To differentiate scribe lines from scratches and detect scratches appropriately. The scratch detection method according to the present invention includes: a processing groove forming step of forming a dividing groove on the front surface of a wafer; a grinding step of grinding the wafer from the back surface to expose the processing groove; and an image capturing step of photographing the ground surface of the wafer after it is grinded; an editing step of performing coordinate transformation on the captured image of the wafer and editing it into a strip image; a removing step of removing lines equivalent to the dividing groove from the strip image; and a step of determining the presence or absence of scratches according to the strip image after the removal of the lines.

Description

刮痕檢測方法Scratch detection method

發明領域 本發明是有關於一種檢測形成於磨削後的晶圓的表面之刮痕的刮痕檢測方法。FIELD OF THE INVENTION The present invention relates to a scratch detection method for detecting scratches formed on the surface of a wafer after grinding.

發明背景 以磨削裝置對晶圓進行橫向進給(infeed)磨削時,會在晶圓的被磨削面上作為磨削痕跡而形成刀痕(saw mark)。刀痕是從晶圓的中心朝向外周而放射狀地形成。在刀痕中,特別會有於加工中從磨削磨石脱落的磨粒接觸於晶圓的被磨削面而造成損傷之所謂的產生刮痕(scratch)的情形。由於此刮痕會對形成於晶圓之元件造成影響,所以必須在磨削結束時確認刮痕的有無。BACKGROUND OF THE INVENTION When infeed grinding a wafer with a grinding device, a saw mark is formed as a grinding mark on a grinding surface of the wafer. The knife marks are formed radially from the center of the wafer toward the outer periphery. Among the knife marks, there are cases in which so-called scratches are caused by the abrasive grains falling off the grinding stone contacting the ground surface of the wafer during processing and causing damage. Since this scratch affects the components formed on the wafer, it is necessary to confirm the presence of the scratch at the end of grinding.

於是,已有一種在磨削加工後檢測晶圓的刮痕的磨削裝置之方案被提出(參照例如專利文獻1)。在專利文獻1中,是將光束照射於加工後之晶圓的被磨削面,並且根據其反射光的光量來判斷刮痕的有無。 先前技術文獻 專利文獻Therefore, there has been proposed a grinding device that detects a scratch of a wafer after a grinding process (see, for example, Patent Document 1). In Patent Document 1, a polished surface of a processed wafer is irradiated with a light beam, and the presence or absence of scratches is determined based on the amount of reflected light. Prior Art Literature Patent Literature

專利文獻1:日本專利特開2009-95903號公報Patent Document 1: Japanese Patent Laid-Open No. 2009-95903

發明概要 發明欲解決之課題 然而,在磨削加工前於沿著分割預定線對晶圓進行半切之DBG(切割後研磨,Dicing Before Grinding)程序中,是藉由實施磨削加工將晶圓分割成一個個晶片。從而,於磨削後的晶圓的被磨削面上會變得不僅顯現上述之刮痕,也顯現分割線。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in the DBG (Dicing Before Grinding) program, which performs a half-cut of a wafer along a predetermined division line before grinding, the wafer is divided by performing grinding processing. Into wafers. Therefore, not only the above-mentioned scratches but also the dividing lines appear on the ground surface of the wafer after grinding.

在此情況下,當以專利文獻1的磨削裝置來實施刮痕檢測時,不僅可檢測刮痕也可檢測分割線。因此,可設想為下述情形:無法區別刮痕與分割線,而無法適當地檢測刮痕。In this case, when scratch detection is performed by the grinding device of Patent Document 1, not only scratches but also division lines can be detected. Therefore, it is conceivable that a scratch cannot be distinguished from a dividing line, and a scratch cannot be detected properly.

本發明是有鑒於所述問題點而作成之發明,其目的之一為提供一種能夠區別分割線與刮痕而適當地檢測刮痕之刮痕檢測方法。 用以解決課題之手段The present invention has been made in view of the problems described above, and one of its objects is to provide a scratch detection method capable of distinguishing a dividing line from a scratch and appropriately detecting the scratch. Means to solve the problem

本發明的一態様的刮痕檢測方法,是在晶圓的分割中檢測刮痕的有無,其中該晶圓的分割是於正面形成有以分割預定線區劃而形成有元件的晶圓上,沿著分割預定線從正面側形成未完全切斷的深度的分割溝之後,以磨削磨石磨削背面,來使分割溝露出於背面側而分割晶圓,且該刮痕檢測方法是以攝像機構拍攝已藉磨削磨石磨削的晶圓的背面的被磨削面,以檢測刮痕的有無, 攝像機構具備拍攝在晶圓的半徑方向上延伸的被磨削面的線型感測器、及平行於線型感測器而延伸且照明被磨削面的光源, 該刮痕檢測方法具備下述步驟: 攝像步驟,將攝像機構在晶圓的半徑內將延伸方向平行於徑方向來定位,並使保持晶圓的保持台以晶圓的中心為軸旋轉,而使攝像機構環狀地拍攝被磨削面,以取得藉由光源的光在分割溝與刮痕散射而成的散射光所形成的拍攝圖像; 去除步驟,從在攝像步驟中所拍攝到的拍攝圖像中移除相當於分割溝之格子狀的直線;及 判斷步驟,在去除步驟後的圖像中有規定寬度以上的圓弧線或直線時,即判斷為有刮痕產生。The scratch detection method of one aspect of the present invention is to detect the presence or absence of scratches during wafer division, wherein the wafer division is formed on a wafer on the front side where a component is formed by dividing a predetermined line division, and the After the division groove is formed with a depth of incomplete cutting from the front side toward the division division line, the back surface is ground with a grindstone to expose the division groove on the back side to divide the wafer. The scratch detection method is based on imaging. The mechanism captures the ground surface of the back surface of the wafer that has been ground by the grinding stone to detect the presence or absence of scratches. The imaging mechanism includes a linear sensor that captures the ground surface extending in the radial direction of the wafer. And a light source extending parallel to the linear sensor and illuminating the ground surface, the scratch detection method includes the following steps: an imaging step, positioning the imaging mechanism in the radius of the wafer parallel to the radial direction to extend , And the holding table holding the wafer is rotated around the center of the wafer, so that the imaged mechanism photographs the ground surface in a ring shape to obtain the scattered light scattered by the light from the light source in the dividing grooves and scratches. The resulting shot A removal step, which removes a grid-like straight line corresponding to the dividing groove from the captured image captured in the imaging step; and a determination step, which includes a circular arc of a predetermined width or more in the image after the removal step When it is a straight line, it is judged that there are scratches.

根據此構成,可以藉由一邊讓線型感測器拍攝晶圓的半徑部分一邊旋轉保持台,以取得晶圓的被磨削面的拍攝圖像。由於拍攝中是藉由光源照明晶圓的半徑部分,所以能夠從拍攝圖像的明暗中辨識刮痕、以及相當於分割溝的格子狀的直線(分割線)。特別是,可以藉由將拍攝圖像編輯成帶狀圖像,而以具規則性的直線來表示刮痕。另一方面,分割線在帶狀圖像上是以與刮痕不同的線(例如曲線)來顯示。因此,將刮痕與分割線作區別是可能的。並且,根據已去除分割線的帶狀圖像來判定刮痕的有無,藉此能夠適當地檢測刮痕。According to this configuration, it is possible to obtain a photographed image of the ground surface of the wafer by rotating the holding table while the linear sensor photographs a radius portion of the wafer. Since the radius portion of the wafer is illuminated by a light source during shooting, it is possible to recognize scratches and the grid-like straight lines (dividing lines) corresponding to the dividing grooves from the brightness of the captured image. In particular, a scratch image can be represented by a straight line with regularity by editing a captured image into a band image. On the other hand, the division line is displayed on the band-shaped image as a line (for example, a curve) different from a scratch. Therefore, it is possible to distinguish a scratch from a dividing line. In addition, the presence or absence of scratches is determined based on the strip-shaped image from which the dividing lines have been removed, whereby the scratches can be appropriately detected.

又,在本發明的一態樣的上述刮痕檢測方法中,是將光源的亮度調節成攝像機構無法拍攝藉由磨削磨石形成在晶圓上的磨削痕跡之亮度。 發明效果In the scratch detection method according to one aspect of the present invention, the brightness of the light source is adjusted so that the imaging mechanism cannot capture the brightness of the grinding mark formed on the wafer by the grinding stone. Invention effect

根據本發明,能夠區別分割線與刮痕並且適當地檢測刮痕。According to the present invention, it is possible to distinguish a dividing line from a scratch and detect the scratch appropriately.

用以實施發明之形態 以往以來,當以磨削裝置對晶圓進行橫向進給磨削時,會有在晶圓的被磨削面形成包含刮痕的磨削痕跡(刀痕)的情形。作為刮痕的例子,可列舉出從晶圓的中心朝向外周規則地形成的圓弧狀的花紋(磨削痕跡)。其他,也有在加工中從磨削磨石脱落的磨粒接觸於晶圓被磨削面而造成損傷之產生刮痕的情形。此刮痕由於會對形成於晶圓之元件造成影響,所以形成刮痕之情形是不怎麼理想的。Form for Carrying Out the Invention In the past, when a wafer was subjected to lateral feed grinding by a grinding device, grinding marks (knife marks) including scratches were sometimes formed on the grinding surface of the wafer. An example of the scratch is an arc-shaped pattern (grinding mark) formed regularly from the center of the wafer toward the outer periphery. In addition, there may be cases where scratches are caused by the abrasive grains falling off the grinding stone contacting the surface to be polished of the wafer during processing. This scratch is not ideal because it affects the components formed on the wafer.

可考慮例如,藉由對晶圓的上表面供給大量的磨削水來實施磨削加工之作法,以將已脱落之磨粒從晶圓的被磨削面排除,而難以形成刮痕。然而,增加磨削水的供給量是不符經濟效益的,此外,更因大量的磨削水成為主因,而導致磨削磨石勾附於晶圓之力、亦即磨粒的咬合變弱。其結果,恐有磨削効率惡化之虞。For example, it is conceivable to perform a grinding process by supplying a large amount of grinding water to the upper surface of the wafer so as to remove the abrasive grains that have fallen off from the grinding surface of the wafer, thereby making it difficult to form scratches. However, increasing the supply of grinding water is not economical. In addition, a large amount of grinding water is the main cause, which causes the force of the grinding stone to attach to the wafer, that is, the bite of the abrasive particles becomes weak. As a result, there is a possibility that the grinding efficiency may deteriorate.

像這樣,雖然能夠藉由將磨削水增多來抑制刮痕的產生,但是要做到磨削効率的兼顧是困難的。因此,必須在磨削結束時確認刮痕的有無。於是,以往以來,已有一種具備刮痕檢測機構之磨削裝置的方案被提出,該刮痕檢測機構是將光束照射於加工後的晶圓的被磨削面,並且根據其反射光的光量來判斷刮痕的有無。In this way, although the generation of scratches can be suppressed by increasing the amount of grinding water, it is difficult to achieve a balance between grinding efficiency. Therefore, the presence or absence of scratches must be confirmed at the end of grinding. Therefore, in the past, there has been proposed a grinding device including a scratch detection mechanism. The scratch detection mechanism irradiates a light beam on a ground surface of a processed wafer, and according to the light amount of the reflected light. To determine the presence of scratches.

然而,作為晶圓的加工方法的1種,已有稱為DBG(切割後研磨,Dicing Before Grinding)程序的方法。在DBG程序中,是從晶圓的正面側沿著分割預定線進行半切,而在晶圓上形成深度相當於元件的成品厚度之分割溝。並且,從晶圓的背面側進行磨削,使分割溝從該背面露出並將分割溝朝厚度方向貫通,而將晶圓分割成一個個的元件。However, as a method of processing a wafer, there is a method called a DBG (Dicing Before Grinding) program. In the DBG program, a half cut is performed from the front side of the wafer along a predetermined division line, and a division groove having a depth corresponding to the thickness of the finished product of the element is formed on the wafer. Then, the wafer is ground from the back side of the wafer to expose the division grooves from the back surface and penetrate the division grooves in the thickness direction to divide the wafer into individual elements.

當藉由上述的刮痕檢測機構對已藉這種DBG程序來磨削的晶圓實施刮痕檢測時,不僅可檢測刮痕也可檢測分割線(分割溝)。亦即,會將分割線誤辨識為刮痕。像這樣,利用以往的刮痕檢測機構並無法區別刮痕與分割線,恐有無法適當地檢測刮痕之虞。When scratch detection is performed on a wafer that has been ground by such a DBG program by the above-mentioned scratch detection mechanism, not only scratches but also division lines (division grooves) can be detected. That is, the dividing line is misidentified as a scratch. As described above, the conventional scratch detection mechanism cannot distinguish between the scratch and the dividing line, and there is a possibility that the scratch cannot be properly detected.

於是,本發明之發明人構思了在DBG程序中區別分割線與刮痕來適當地檢測刮痕之作法。Therefore, the inventor of the present invention conceived a method of distinguishing a dividing line from a scratch in a DBG program to appropriately detect the scratch.

以下,參照圖1到圖6來說明本實施形態之刮痕檢測方法。圖1是顯示本實施形態的加工溝形成步驟之一例的示意圖。圖2是顯示本實施形態的磨削步驟之一例的示意圖。圖2A所顯示的是磨削前的狀態,圖2B所顯示的是磨削中的狀態。圖3是顯示本實施形態的攝像步驟之一例的示意圖。圖3A是從規定方向觀看保持台的側視圖,圖3B是從圖3A的箭頭A的方向觀看保持台的側視圖。圖3C是磨削後的晶圓的頂視圖,圖3D為拍攝圖像。圖4是顯示本實施形態的編輯步驟之一例的示意圖。圖5是顯示本實施形態的去除步驟之一例的示意圖。圖6是顯示本實施形態的判斷步驟之一例的示意圖。再者,以下的各個步驟可利用各自獨立的加工裝置來實施,亦可將全部的步驟以單一個加工裝置來實施。Hereinafter, a scratch detection method according to this embodiment will be described with reference to FIGS. 1 to 6. FIG. 1 is a schematic diagram showing an example of a processing groove forming step according to this embodiment. FIG. 2 is a schematic diagram showing an example of a grinding step in the present embodiment. FIG. 2A shows a state before grinding, and FIG. 2B shows a state during grinding. FIG. 3 is a schematic diagram showing an example of an imaging procedure in this embodiment. 3A is a side view of the holding table viewed from a predetermined direction, and FIG. 3B is a side view of the holding table viewed from a direction of an arrow A in FIG. 3A. FIG. 3C is a top view of the ground wafer, and FIG. 3D is a captured image. FIG. 4 is a schematic diagram showing an example of an editing procedure in the present embodiment. FIG. 5 is a schematic diagram showing an example of a removal step in the present embodiment. FIG. 6 is a schematic diagram showing an example of a judging procedure in this embodiment. In addition, each of the following steps may be implemented by a separate processing device, or all steps may be implemented by a single processing device.

本實施的形態之刮痕檢測方法是藉由下述步驟實施: 加工溝形成步驟,於晶圓的正面形成加工溝(分割溝)(參照圖1); 磨削步驟,從背面磨削晶圓來使加工溝露出(參照圖2); 攝像步驟,拍攝磨削後的晶圓的被磨削面(背面)(參照圖3); 編輯步驟,對晶圓的拍攝圖像進行座標轉換以編輯成帶狀圖像(參照圖4); 去除步驟,從帶狀圖像去除相當於分割溝的線(參照圖5);及 判斷步驟,根據去除後的帶狀圖像來判斷刮痕的有無(參照圖6)。The scratch detection method of this embodiment is implemented by the following steps: a processing groove forming step, forming a processing groove (dividing groove) on the front surface of the wafer (see FIG. 1); a grinding step, grinding the wafer from the back surface To expose the processing groove (refer to FIG. 2); an imaging step to photograph the ground surface (back surface) of the wafer after grinding (refer to FIG. 3); an editing step to perform coordinate conversion on the photographed image of the wafer for editing A strip image (see FIG. 4); a removal step, which removes a line corresponding to a dividing groove from the strip image (see FIG. 5); and a determination step, which determines the presence or absence of scratches based on the removed strip image (See Figure 6).

如圖1所示,晶圓W是在背面側貼附有保護膠帶T1(例如切割膠帶),且將該背面側隔著保護膠帶T1來吸引保持於切削裝置(未圖示)的保持台10上。晶圓W是形成為大致圓板狀,並藉由形成於正面的格子狀(例如X方向及Y方向)的分割預定線(未圖示)而被區劃成複數個區域。於各區域中形成有圖未示的元件。再者,晶圓W也可以是在矽,砷化鎵等半導體基板上形成有IC,LSI等元件的半導體晶圓,也可以是在陶瓷,玻璃,藍寶石系的無機材料基板上形成有LED等光元件的光元件晶圓。保持台10是構成為可藉由圖未示的旋轉機構以鉛直方向的中心軸為中心旋轉,並且藉由切削進給機構11在水平方向上移動(切削進給)。As shown in FIG. 1, a protective tape T1 (for example, a dicing tape) is attached to the wafer W on the back surface, and the holding table 10 held by a cutting device (not shown) is sucked and held by the protective tape T1 on the back surface. on. The wafer W is formed into a substantially circular plate shape, and is divided into a plurality of regions by predetermined division lines (not shown) formed in a grid shape (for example, X direction and Y direction) formed on the front surface. Elements not shown are formed in each region. Furthermore, the wafer W may be a semiconductor wafer in which elements such as IC and LSI are formed on a semiconductor substrate such as silicon or gallium arsenide, or an LED may be formed on a substrate of ceramic, glass, or sapphire-based inorganic material. Optical element wafer for optical elements. The holding table 10 is configured to be rotatable around a central axis in the vertical direction by a rotation mechanism (not shown), and is moved in the horizontal direction by the cutting feed mechanism 11 (cutting feed).

在加工溝形成步驟中是藉由切削刀12而沿著分割預定線對晶圓W正面進行半切。亦即,在晶圓W的正面沿著分割預定線形成未完全切斷的深度的分割溝V。In the processing groove forming step, the front surface of the wafer W is half-cut by the cutter 12 along a predetermined division line. That is, a division groove V having a depth that is not completely cut is formed on the front surface of the wafer W along a predetermined division line.

具體而言,晶圓W是以元件面朝上的狀態被吸引保持於保持台10,並且將切削刀12在晶圓W的外周附近沿著分割預定線定位於規定高度。此時,切削刀12的高度是定位在讓切削刀12的下端部在厚度方向上未完全切斷晶圓W的高度上。Specifically, the wafer W is sucked and held on the holding table 10 with the element surface facing upward, and the cutter 12 is positioned at a predetermined height along the planned division line near the outer periphery of the wafer W. At this time, the height of the cutting blade 12 is positioned so that the lower end portion of the cutting blade 12 does not completely cut the wafer W in the thickness direction.

並且,相對於高速旋轉的切削刀12來將保持台10在水平方向上相對地切削進給。藉此,沿著分割預定線切入晶圓W的正面,而形成深度相當於元件的成品厚度之分割溝V。當完成1條線的切削加工後,將切削刀12在旋轉軸方向上分度進給,並沿著相鄰的分割預定線再次形成分割溝V。Then, the holding table 10 is relatively cut and fed in the horizontal direction with respect to the cutting blade 12 rotating at a high speed. Thereby, the front surface of the wafer W is cut along a predetermined division line to form a division groove V having a depth corresponding to the thickness of the finished product of the element. When the cutting processing of one line is completed, the cutting blade 12 is fed in the direction of the rotation axis, and the division groove V is formed again along the adjacent predetermined division line.

如此進行而沿著晶圓W的一個方向的全部的分割預定線都形成分割溝V後,將保持台10旋轉90度。並且,藉由再次相對於切削刀12將保持台10切削進給,以沿著正交於先前切削的分割溝V的另外的分割預定線,形成新的分割溝V。藉由以上,可在晶圓W的正面形成格子狀的分割溝V。After the division grooves V are formed in all the division dividing lines along one direction of the wafer W in this manner, the holding table 10 is rotated by 90 degrees. Then, by cutting and feeding the holding table 10 with respect to the cutting blade 12 again, a new division groove V is formed along another predetermined division line orthogonal to the division groove V previously cut. As described above, the grid-like divided grooves V can be formed on the front surface of the wafer W.

當加工溝形成步驟完成時,可將貼附於晶圓W的背面側的保護膠帶T1剝離,且這次可在晶圓W的正面側(分割溝V側)貼附新的保護膠帶T2(例如研磨膠帶(back grind tape)(參照圖2))。再者,保護膠帶T1的剝離、及保護膠帶T2的貼附,可由操作者的手動作業來實施,亦可藉由規定的剝離(或貼附)裝置(未圖示)來實施。When the processing groove forming step is completed, the protective tape T1 attached to the back side of the wafer W can be peeled off, and this time a new protective tape T2 (for example, Back grind tape (see FIG. 2)). The peeling of the protective tape T1 and the application of the protective tape T2 may be performed manually by an operator, or may be performed by a predetermined peeling (or attaching) device (not shown).

接著,實施磨削步驟。如圖2所示,在磨削步驟中是藉由磨削機構30磨削晶圓W的背面側,使先前所形成的分割溝V露出於背面側,藉此將晶圓W分割成一個個的晶片。Next, a grinding step is performed. As shown in FIG. 2, in the grinding step, the back surface side of the wafer W is ground by the grinding mechanism 30, and the previously formed division grooves V are exposed on the back surface side, thereby dividing the wafer W into individual pieces. Of wafers.

具體而言,是如圖2A所示,將晶圓W從切削裝置搬送到磨削裝置(未圖示),且以將貼附有保護膠帶T2的正面側朝下的狀態載置於保持台20上。保持台20是以將圓板狀的多孔板21安裝於成為主體之框體22的多孔夾頭所構成。於多孔板21的上表面形成有吸引保持晶圓W的保持面21a。Specifically, as shown in FIG. 2A, the wafer W is transferred from the cutting device to the grinding device (not shown), and is placed on the holding table with the front side to which the protective tape T2 is attached facing downward. 20 on. The holding table 20 is constituted by a porous chuck in which a circular plate-shaped porous plate 21 is attached to a frame 22 as a main body. A holding surface 21 a that attracts and holds the wafer W is formed on the upper surface of the porous plate 21.

保持面21a具有將保持台20的旋轉中心(保持面21a的中心)設為頂點而外周稍微傾斜變低的傾斜面。晶圓W在被吸引保持在以圓錐狀的形式傾斜的保持面21a上時,會沿著保持面21a的形狀而變形成平緩傾斜的圓錐狀。The holding surface 21 a has an inclined surface with the center of rotation of the holding table 20 (the center of the holding surface 21 a) as the apex and the outer periphery being slightly inclined and lowered. When the wafer W is attracted and held on the holding surface 21a inclined in a conical shape, the wafer W is deformed into a gently inclined conical shape along the shape of the holding surface 21a.

又,保持台20是連結於工作台旋轉機構23,並藉由工作台旋轉機構23的驅動而以晶圓W的中心為軸地且可旋轉地構成。此外,保持台10是以可藉由圖未示的傾斜調整機構來調整其傾斜度的方式構成。The holding table 20 is connected to the table rotation mechanism 23 and is configured to be rotatably pivoted about the center of the wafer W by driving of the table rotation mechanism 23. The holding table 10 is configured so that the inclination can be adjusted by an inclination adjusting mechanism (not shown).

磨削機構30是構成為以主軸31使磨削輪32以繞中心軸的方式旋轉。主軸31的軸端(下端)是隔著安裝座33而安裝有磨削輪32。磨削輪32的下表面側以圓環狀的方式隔著間隔而配置有複數個磨削磨石34。磨削磨石34是例如以陶瓷結合劑(vitrified bond)結合規定磨粒粒徑的鑽石磨粒而構成。再者,磨削磨石34並不限定於此,亦可用金屬黏結劑或樹脂黏結劑等的結合劑固定鑽石磨粒而形成。又,磨削機構30是以可藉由磨削進給機構35在鉛直方向上升降的方式構成。The grinding mechanism 30 is configured to rotate the grinding wheel 32 around the central axis with the main shaft 31. A grinding wheel 32 is mounted on a shaft end (lower end) of the main shaft 31 via a mounting base 33. A plurality of grinding stones 34 are arranged on the lower surface side of the grinding wheel 32 in a ring shape at intervals. The grinding stone 34 is composed of, for example, a diamond bond having a predetermined abrasive particle size with a ceramic bond. The grinding stone 34 is not limited to this, and may be formed by fixing diamond abrasive grains with a binder such as a metal binder or a resin binder. The grinding mechanism 30 is configured to be vertically movable by a grinding feed mechanism 35.

吸引保持晶圓W的正面側的保持台20是定位在磨削機構30的下方。此時,保持台20的旋轉軸是定位在從磨削磨石34的旋轉軸偏心的位置上。此外,保持台20可藉由傾斜調整機構調整旋轉軸的傾斜度,以使得磨削磨石34的磨削面34a與保持面21a成為平行。The holding table 20 that sucks and holds the front side of the wafer W is positioned below the grinding mechanism 30. At this time, the rotation axis of the holding table 20 is positioned at a position eccentric from the rotation axis of the grinding stone 34. In addition, the holding table 20 can adjust the inclination of the rotating shaft by the tilt adjustment mechanism so that the grinding surface 34a of the grinding stone 34 and the holding surface 21a are parallel.

並且,旋轉保持台20,並且將磨削機構30在以主軸31使磨削輪32(磨削磨石34)旋轉時,藉由磨削進給機構35朝向保持面21a下降(磨削進給)。磨削磨石34的磨削面34a是以圓弧狀的方式接觸於從晶圓W的中心到外周的半徑部分。Then, when the holding table 20 is rotated and the grinding mechanism 30 rotates the grinding wheel 32 (grinding grindstone 34) with the main shaft 31, the grinding feed mechanism 35 is lowered toward the holding surface 21a (grinding feed) ). The grinding surface 34 a of the grinding grindstone 34 is in an arc-like manner and comes into contact with a radius from the center of the wafer W to the outer periphery.

像這樣,磨削機構30是讓磨削磨石34通過晶圓W的中心,在該晶圓W的中心與外周之間的半徑區域對晶圓W的圓弧的被磨削部分進行磨削。藉由一邊使磨削磨石34與晶圓W旋轉接觸一邊逐漸地往Z軸方向磨削進給,可將晶圓W在厚度方向上磨削、薄化。In this manner, the grinding mechanism 30 passes the grinding stone 34 through the center of the wafer W, and grinds the portion to be ground of the arc of the wafer W in a radius region between the center of the wafer W and the outer periphery. . By gradually grinding and feeding the grinding stone 34 in the Z-axis direction while the grinding grindstone 34 is in rotational contact with the wafer W, the wafer W can be ground and thinned in the thickness direction.

如圖2B所示,當將晶圓W薄化到所期望的厚度、即元件的成品厚度為止時,會使分割溝V從晶圓W的背面側露出,而完成磨削加工。藉此,可使沿著分割預定線之分割溝V於晶圓W的厚度方向上貫通,且將晶圓W分割成一個個的元件(晶片)。再者,由於各元件是藉由保護膠帶T2固定,所以整體而言是形成為維持了晶圓W的圓形形狀的狀態。再者,由於分割溝V為已貫通,所以便將形成於晶圓W上的格子狀的直線稱為「分割線」。此外,「分割線」亦可被稱為曲線。As shown in FIG. 2B, when the wafer W is thinned to a desired thickness, that is, the thickness of the finished product of the element, the divided grooves V are exposed from the back surface side of the wafer W to complete the grinding process. Thereby, the division groove V along the predetermined division line can be penetrated in the thickness direction of the wafer W, and the wafer W can be divided into individual elements (wafers). In addition, since each element is fixed by the protective tape T2, it is formed in the state which maintained the circular shape of the wafer W as a whole. In addition, since the dividing groove V is penetrated, the grid-shaped straight line formed on the wafer W is referred to as a "dividing line". In addition, the "dividing line" can also be called a curve.

接著,實施攝像步驟。在攝像步驟中,是如圖3所示,以攝像機構41拍攝晶圓W的背面(被磨削面)。在此,針對檢測形成於晶圓W的被磨削面的刮痕之刮痕檢測機構40的構成作説明。在本實施形態中,雖然是針對將刮痕檢測機構40設置於磨削裝置之情況來作說明,但並不限定於此構成。刮痕檢測機構40亦可設置於獨立的裝置中。Next, an imaging step is performed. In the imaging step, as shown in FIG. 3, the back surface (surface to be ground) of the wafer W is imaged by the imaging mechanism 41. Here, the structure of the scratch detection mechanism 40 which detects the scratch of the grinding | polishing surface formed on the wafer W is demonstrated. In the present embodiment, the case where the scratch detection mechanism 40 is provided in the grinding device has been described, but it is not limited to this configuration. The scratch detection mechanism 40 may also be provided in a separate device.

如圖3A及圖3B所示,刮痕檢測機構40具備有拍攝晶圓W的被磨削面之攝像機構41、以及根據攝像機構41所拍攝到的拍攝圖像來判斷刮痕的有無之判斷機構42。攝像機構41是由從上方拍攝晶圓W的被磨削面之線型感測器43、及沿著該線型感測器43而配設之光源44所構成。As shown in FIGS. 3A and 3B, the scratch detection mechanism 40 includes an imaging mechanism 41 that captures the ground surface of the wafer W, and a judgment to determine the presence or absence of scratches based on a captured image captured by the imaging mechanism 41. Agency 42. The imaging mechanism 41 includes a linear sensor 43 that photographs the ground surface of the wafer W from above, and a light source 44 that is disposed along the linear sensor 43.

線型感測器43是例如以影像感測器所構成。線型感測器43是在晶圓W的半徑方向上延伸,並且具有較該半徑部分為短的長度。線型感測器43可拍攝相當於晶圓W的半徑的一部分之區域。光源44是以和線型感測器43相同方向(平行)、相同長度延伸,並且朝向晶圓W的被磨削面照射光。具體而言,光源44是照明晶圓W的被磨削面,來將線型感測器43的拍攝範圍照亮。The linear sensor 43 is configured by, for example, an image sensor. The linear sensor 43 extends in the radial direction of the wafer W, and has a length shorter than the radius portion. The linear sensor 43 can capture an area corresponding to a part of the radius of the wafer W. The light source 44 extends in the same direction (parallel) and the same length as the linear sensor 43 and irradiates light toward the grinding surface of the wafer W. Specifically, the light source 44 is the ground surface of the illumination wafer W to illuminate the imaging range of the linear sensor 43.

判斷機構42是被組裝至統合控制磨削裝置的動作之控制裝置中,且具有編輯拍攝圖像之編輯部45、及根據編輯後的拍攝圖像來判斷刮痕的有無的判斷部46。The judging mechanism 42 is incorporated in a control device that integrally controls the operation of the grinding device, and includes an editing unit 45 for editing a captured image and a judging unit 46 for determining the presence or absence of scratches based on the edited captured image.

在攝像步驟中,是以將磨削加工後的晶圓W吸引保持於保持台20的狀態原樣定位到攝像機構41的下方。此外,保持台20是藉由傾斜調整機構來調整旋轉軸的傾斜度,以使攝像機構41(線型感測器43)的延伸方向和晶圓W的被磨削面(保持面21a)成為平行。In the imaging step, the wafer W after being ground is sucked and held on the holding table 20 as it is positioned below the imaging mechanism 41 as it is. In addition, the holding stage 20 adjusts the inclination of the rotation axis by a tilt adjustment mechanism so that the extending direction of the imaging mechanism 41 (the linear sensor 43) is parallel to the ground surface (holding surface 21a) of the wafer W. .

如圖3A及圖3B所示,線型感測器43的拍攝區域是相當於線型感測器43正下方之晶圓W的半徑的一部分。光源44是朝向線型感測器43的拍攝區域照射光。攝像機構41是藉由一邊以線型感測器43拍攝被光源44之光所照射的晶圓W之半徑的一部分,一邊將保持台20上的晶圓W旋轉1圈,來拍攝晶圓W的被磨削面。再者,由光源44照射之光線是具有在晶圓W的表面上反射的波長,而不使用對於晶圓W具有穿透性之波長的光。As shown in FIGS. 3A and 3B, the imaging area of the linear sensor 43 is a portion corresponding to a radius of the wafer W directly below the linear sensor 43. The light source 44 emits light toward the imaging area of the linear sensor 43. The imaging mechanism 41 captures a portion of the radius of the wafer W irradiated by the light from the light source 44 with a linear sensor 43 and rotates the wafer W on the holding table 20 by one turn to capture the wafer W. Grinded surface. In addition, the light irradiated by the light source 44 is a light having a wavelength reflected on the surface of the wafer W, and light having a wavelength that is transparent to the wafer W is not used.

如圖3C所示,於磨削後的晶圓W的被磨削面上,形成有格子狀的分割線L、以及呈無數個地從晶圓W的中心朝向外周且規則的圓弧狀的刮痕S。當拍攝晶圓W的被磨削面時,即可以如圖3D所示地取得環狀的拍攝圖像。As shown in FIG. 3C, on the to-be-ground surface of the wafer W after grinding, a grid-like dividing line L and an infinite number of regular circular arcs are formed from the center of the wafer W toward the outer periphery. Scratch S. When the to-be-ground surface of the wafer W is captured, a ring-shaped captured image can be obtained as shown in FIG. 3D.

在圖3D所示的拍攝圖像中,是藉由光源44之光在分割線L(分割溝)與刮痕S散射而成的散射光,而產生有明暗。具體而言,由於會因形成於晶圓W的微細的凹凸使拍攝光的反射光變弱(散射),所以可從明暗的對比中辨識刮痕S與分割線L。In the captured image shown in FIG. 3D, light and darkness are generated by the scattered light scattered by the light from the light source 44 on the dividing line L (dividing groove) and the scratch S. Specifically, the reflected light of the imaging light is weakened (scattered) due to the fine unevenness formed on the wafer W, so that the scratch S and the dividing line L can be distinguished from the contrast between light and dark.

特別是,在本實施形態中,由於拍攝圖像中包含分割線L,所以會有因應於該部分而拍攝圖像的資料量變大的可能性。於是,將攝像機構41設得比晶圓W的半徑更短而將拍攝範圍設得較小。藉此,可得到圖3D所示的環狀的拍攝圖像,且相較於對晶圓W整個面拍攝的情況可將拍攝圖像的資料量變小。其結果,變得可減輕之後的步驟中的判斷機構42的處理負荷。In particular, in the present embodiment, since the divided image L is included in the captured image, there is a possibility that the amount of data of the captured image will increase in response to this portion. Therefore, the imaging mechanism 41 is set shorter than the radius of the wafer W and the imaging range is set smaller. Thereby, a ring-shaped captured image shown in FIG. 3D can be obtained, and the amount of data of the captured image can be reduced compared to the case where the entire surface of the wafer W is captured. As a result, it becomes possible to reduce the processing load of the determination unit 42 in the subsequent steps.

又,藉由將攝像機構41沿著晶圓W的半徑方向配置,使保持晶圓W的保持台20旋轉1圈來拍攝晶圓W的被磨削面,藉此可將光對刮痕的照射情況經常地形成為均勻。其結果,不會有晶圓W的中心偏移的情形,而能夠取得適當的晶圓W之拍攝圖像。In addition, the imaging mechanism 41 is arranged along the radial direction of the wafer W, and the holding table 20 holding the wafer W is rotated once to photograph the to-be-ground surface of the wafer W, so that light can be applied to the The exposure is often formed uniformly. As a result, the center of the wafer W is not shifted, and an appropriate captured image of the wafer W can be obtained.

接著,實施編輯步驟。在編輯步驟中,是將在攝像步驟所得到的拍攝圖像進行座標轉換,而編輯成圖4所示的帶狀圖像。具體而言,編輯部45(參照圖3)是將拍攝圖像(參照圖3D)的半徑方向(從晶圓中心到晶圓外周)設為縱軸,並將拍攝圖像的圓周方向(從0°到360°)設為横軸來實施座標轉換。由座標轉換所得到的編輯圖像,如圖4所示,是以於圓周方向較長的矩形圖像(帶狀圖像)來表示。Next, an editing step is performed. In the editing step, the captured image obtained in the image capturing step is subjected to coordinate conversion, and is edited into a band-shaped image as shown in FIG. 4. Specifically, the editing unit 45 (see FIG. 3) sets the radial direction (from the wafer center to the wafer periphery) of the captured image (see FIG. 3D) as the vertical axis, and sets the circumferential direction (from 0 ° to 360 °) is set as the horizontal axis to perform coordinate conversion. As shown in FIG. 4, the edited image obtained by coordinate conversion is represented by a rectangular image (strip image) that is longer in the circumferential direction.

例如,圖3D所示的分割線L及刮痕S在圖4的帶狀圖像中,是分別以曲線LA 及直線SA 來表示。再者,圖4的帶狀圖像是提取圖3D的半徑方向及圓周方向的一部分而顯示。又,於圖4中,為了便於説明,是以虛線來表示相當於分割線的曲線LA 。此外,在圖4中,是設成在帶狀圖像上顯現有複數條直線SA 之中寬度比較粗的直線SB 之構成。For example, as shown in FIG. 3D parting line S L, and scratches in the band image of FIG. 4, respectively and the straight line curve L A S A represented. Note that the band-shaped image in FIG. 4 is extracted and displayed by extracting a part of the radial direction and the circumferential direction in FIG. 3D. In addition, in FIG. 4, for convenience of explanation, a curve L A corresponding to a dividing line is shown by a broken line. Further, in FIG. 4, configuration is set to S A S B of the straight line in the width of the strip in a relatively thick visualized image has a plurality of straight lines.

像這樣,相對於實際的拍攝圖像中,刮痕S是以圓弧狀的曲線來顯示,在編輯後的帶狀圖像中,刮痕S是以具有規則性的直線SA 來顯示。藉此,在之後的判斷步驟中,判斷部46變得容易判定刮痕的有無。另一方面,在圖3D的拍攝圖像中,相對於分割線L是以格子狀的直線來顯示,在編輯後的帶狀圖像中,分割線L是以圓弧狀的曲線LA 來顯示。特別是,曲線LA 是以相對於直線SA 交叉、或與具有規則性的直線SA 為傾向不同的曲線(不具有規則性的曲線)來表示。因此,刮痕S(直線SA )與分割線L(曲線LA )變得容易區別。Thus, with respect to the actual captured image, scratches arcuate curve S is displayed in the edited image strip, is having regular scratches S S A straight line is displayed. Thereby, in the following determination step, the determination part 46 becomes easy to determine the presence or absence of a scratch. On the other hand, in the captured image of FIG. 3D, the division line L is displayed as a grid-like straight line with respect to the division line L. In the edited band image, the division line L is represented by an arc-shaped curve L A display. In particular, with respect to the curve is a straight line L A S A cross, or the straight line S A having regularity tends to different curves (curve having no regularity) of FIG. Therefore, the scratches S (straight line S A ) and the dividing line L (curve L A ) become easy to distinguish.

接著,實施去除步驟。在去除步驟中,是從在攝像步驟所拍攝到的拍攝圖像中將相當於分割溝的格子狀的直線(分割線L)移除。具體而言,是在編輯後的帶狀圖像中,將與直線SA 為傾向不同的曲線LA 去除。編輯部45是在將拍攝圖像編輯成帶狀圖像後,區別刮痕S與分割線L,而將沒有規則性的曲線LA (分割線L)從帶狀圖像中去除。在此情況下,由於直線SB 是在與具有規則性的直線SA 具有相同的規則性的位置及方向上形成,所以編輯部45不會將該直線SB 從帶狀圖像中去除。此等結果,可獲得圖5所示的帶狀圖像。Next, a removal step is performed. In the removing step, a grid-shaped straight line (dividing line L) corresponding to the dividing groove is removed from the captured image captured in the imaging step. Specifically, the belt-shaped image is edited, the removal of the straight line S A tendency different curves L A. The editing unit 45 edits the captured image into a band image, distinguishes the scratches S from the division line L, and removes the curve L A (the division line L) without regularity from the band image. In this case, since the straight line S B are formed on the same regularity S A straight line having a regular position and orientation, the editing unit 45 is not removed from the strip S B linear image. As a result of this, a band-like image as shown in FIG. 5 can be obtained.

接著,實施判斷步驟。在判斷步驟中,是根據去除步驟所得到的帶狀圖像來判斷刮痕的有無。例如,判斷部46(參照圖3)是在去除步驟後的帶狀圖像中,於有規定寬度以上的圓弧或直線的線時,判斷為有刮痕產生。具體而言,若在圖5所示的帶狀圖像中,有規則性的直線的寬度比預先設定的寬度更大的話,判斷部46即判斷為有刮痕,若有規則性的直線的寬度為預先設定的寬度以下的話,即判斷為無刮痕。又,判斷部46於帶狀圖像中出現了具規則性之直線以外的線的情形下也是判斷為有刮痕。Next, a judgment step is performed. In the determination step, the presence or absence of scratches is determined based on the band-shaped image obtained in the removal step. For example, the determination unit 46 (see FIG. 3) determines that scratches have occurred when there is an arc or a straight line having a predetermined width or more in the strip-shaped image after the removal step. Specifically, in the strip image shown in FIG. 5, if the width of the regular straight line is larger than the preset width, the determination unit 46 determines that there is a scratch. If the width is equal to or less than a predetermined width, it is determined that there is no scratch. The determination unit 46 also determines that there are scratches when a line other than a regular straight line appears in the band image.

可考慮如圖6所示,於去除步驟後的帶狀圖像中,沿著具有規則性的直線SA 顯示有比較粗的直線SB 的情況。判斷部46,是從帶狀圖像中檢測直線SB 的寬度D,並與預先設定之成為刮痕有無的判斷基準之直線寬度進行比較。其結果,若直線SB 的寬度較大的情況下,將該直線SB 辨識為刮痕SB 。亦即,判斷部46會判斷為有刮痕。再者,判斷部46即便檢測直線SA 的寬度,而該寬度形成得比規定的直線寬度更小,也不會將直線SA 辨識為應去除的刮痕。As shown in FIG. 6, in the band-shaped image after the removal step, a relatively thick straight line S B is displayed along a straight line S A having regularity. The judging unit 46 detects the width D of the straight line S B from the band image, and compares the width D with a preset straight line that serves as a reference for determining the presence or absence of scratches. As a result, when the width of the straight line S B is large, the straight line S B is recognized as a scratch S B. That is, the determination unit 46 determines that there is a scratch. Further, even if the determination unit 46 detects the width A of the straight line S, and the straight line width of a predetermined width is formed smaller than, nor will recognize A straight line S is to be scratch removal.

像這樣,在本實施形態中,於拍攝圖像中,即便是顯示有如磨削痕跡具有規則性的刮痕的情況下,仍然可從去除步驟後的帶狀圖像中檢測比較大的刮痕或沒有規則性的刮痕。亦即,可對會在之後的步驟或形成於晶圓W上之元件造成影響的刮痕進行取捨選擇並判斷。As such, in the present embodiment, even if a scratch with a regularity such as a grinding mark is displayed in the captured image, a relatively large scratch can be detected from the band-shaped image after the removal step. Or there are no regular scratches. That is, scratches that may affect the subsequent steps or the elements formed on the wafer W can be selected and judged.

如以上所説明,根據本實施形態,可以藉由一邊使線型感測器43拍攝晶圓W的半徑部分一邊旋轉保持台20,以取得晶圓W的被磨削面的拍攝圖像。由於拍攝中是藉由光源44照明晶圓W的半徑部分,所以能夠從拍攝圖像的明暗中辨識刮痕S及相當於分割溝V的格子狀的直線(分割線L)。特別是,可以藉由將拍攝圖像編輯成帶狀圖像,而以具有規則性的直線SA 來表示刮痕S。另一方面,分割線L在帶狀圖像上是以與刮痕不同的線(例如曲線LA )來表示。因此,將刮痕S與分割線L作區別是可能的。並且,根據已去除分割線L的帶狀圖像來判定刮痕的有無,藉此能夠適當地檢測刮痕。As described above, according to this embodiment, it is possible to obtain a photographed image of the ground surface of the wafer W by rotating the holding table 20 while imaging the radial portion of the wafer W with the linear sensor 43. Since the radius portion of the wafer W is illuminated by the light source 44 during imaging, the scratches S and the grid-like straight lines (dividing lines L) corresponding to the dividing grooves V can be recognized from the brightness of the captured image. In particular, the captured image can be edited by an image into a strip, and a straight line S A regularity represented scratches S. On the other hand, the division line L is represented by a line (for example, a curve L A ) different from a scratch on a band image. Therefore, it is possible to distinguish the scratches S from the dividing line L. In addition, the presence or absence of scratches can be determined based on the strip-shaped image from which the dividing line L has been removed, whereby the scratches can be appropriately detected.

再者,在本實施形態中,雖然是設成以使保持台20旋轉1圈的作法來拍攝晶圓W的被磨削面之構成,但並不限定於此構成。例如,也可使攝像機構41以晶圓W的中心為軸而旋轉。In addition, in this embodiment, although the structure which provided the imaging | photography of the to-be-ground surface of the wafer W by rotating the holding table 20 by one rotation is provided, it is not limited to this structure. For example, the imaging mechanism 41 may be rotated around the center of the wafer W as an axis.

又,在本實施形態中,雖然是設成攝像機構41以相當於晶圓W的半徑的一部分之長度而延伸之構成,但並不限定於此構成。攝像機構41(線型感測器43及光源44)也可為相當於晶圓W的半徑部分的長度,也可長到其以上。藉由將攝像機構41設為相當於晶圓W的半徑部分的長度,可對晶圓W整個面進行拍攝。In the present embodiment, the imaging mechanism 41 is configured to extend by a length corresponding to a part of the radius of the wafer W, but it is not limited to this configuration. The imaging mechanism 41 (the linear sensor 43 and the light source 44) may have a length corresponding to a radius portion of the wafer W, or may be longer than that. By setting the imaging mechanism 41 to a length corresponding to a radius portion of the wafer W, the entire surface of the wafer W can be imaged.

又,在本實施形態中,可將上述各步驟以各自獨立的加工裝置來實施,亦可將全部的步驟以單一個加工裝置來實施。例如,也可將從磨削步驟到判斷步驟以單一個磨削裝置來實施。藉此,能夠省掉為了刮痕檢測或刮痕去除而將晶圓W搬送到其他裝置的工夫。In this embodiment, each of the above steps may be performed by a separate processing device, or all steps may be performed by a single processing device. For example, the grinding step to the judgment step may be performed by a single grinding device. With this, it is possible to dispense with the time required to transport the wafer W to another device for scratch detection or scratch removal.

又,在本實施形態中,亦可藉由調整攝像步驟中的光源44的亮度,來調整拍攝圖像中的磨削痕跡的顯像狀況。例如,光源44的亮度較理想為調節成無法拍攝磨削痕跡(不會顯示於拍攝圖像中)的亮度。雖然在具有規則性的圓弧狀的刮痕S與相鄰的刮痕S之間將磨削痕跡形成為無數個,但若將這些全部都拍攝的話,不僅拍攝圖像的資料量變大,也有導致有無刮痕的判斷變困難的疑慮。Moreover, in this embodiment, it is also possible to adjust the development condition of the grinding marks in the captured image by adjusting the brightness of the light source 44 in the imaging step. For example, it is preferable that the brightness of the light source 44 is adjusted so that the grinding marks cannot be captured (not displayed in the captured image). Although there are numerous grinding marks between the regular arc-shaped scratches S and the adjacent scratches S, if all of them are captured, not only the amount of data of the captured image will increase, but also Doubts that it is difficult to judge the presence or absence of scratches.

於是,藉由調整光源44的亮度,來間斷地去掉顯示於拍攝圖像的磨削痕跡的數量之作法,可減少拍攝圖像的資料量,並且將刮痕有無的判斷變容易。具體而言,因為藉由將光源44設得比較暗(減少光量)而減低散射光的光量,所以可在拍攝圖像中間斷地去掉磨削痕跡的數量、或使其不顯示磨削痕跡。另一方面,當將光源44設得比較亮(增加光量)時,會因散射光的光量變大,因而使磨削痕跡變得容易顯現於拍攝圖像中。Therefore, by adjusting the brightness of the light source 44 to intermittently remove the number of grinding marks displayed on the captured image, the amount of data of the captured image can be reduced, and the presence or absence of scratches can be easily judged. Specifically, the light amount of the scattered light is reduced by setting the light source 44 relatively dark (reducing the light amount), so that the number of grinding marks can be cut off in the middle of the captured image or the grinding marks can be prevented from being displayed. On the other hand, when the light source 44 is set to be relatively bright (increasing the light amount), the light amount of the scattered light becomes large, so that the grinding marks become easy to appear in the captured image.

又,藉由調整攝像步驟中的光源44的亮度之作法,不僅調整拍攝圖像中的磨削痕跡的顯像狀況,亦可調整攝像機構41與晶圓W的距離。In addition, by adjusting the brightness of the light source 44 in the imaging step, not only the development condition of the grinding marks in the captured image can be adjusted, but also the distance between the imaging mechanism 41 and the wafer W can be adjusted.

又,雖然說明了本實施形態及變形例,但是作為本發明的其他實施形態,亦可為將上述實施形態及變形例整體或部分地組合而成的形態。In addition, although the present embodiment and the modification have been described, as another embodiment of the present invention, a form in which the above-mentioned embodiment and the modification are combined in whole or in part may be used.

又,本發明之實施形態並不限定於上述之實施形態,且亦可在不脫離本發明之技術思想的主旨的範圍內進行各種變更、置換、變形。此外,若能經由技術之進步或衍生之其他技術而以其他的方式來實現本發明之技術思想的話,亦可使用該方法來實施。從而,專利請求的範圍涵蓋了可包含在本發明之技術思想範圍內的所有的實施形態。 産業上之可利用性In addition, the embodiment of the present invention is not limited to the above-mentioned embodiment, and various changes, substitutions, and modifications can be made without departing from the gist of the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized in other ways through technological progress or other derived technologies, this method can also be used for implementation. Therefore, the scope of the patent claim covers all embodiments that can be included in the scope of the technical idea of the present invention. Industrial availability

如以上所説明,本發明具有可以將分割線與刮痕區別而適當地檢測刮痕之效果,特別是對適用於DBG程序的刮痕檢測方法而言是有用的。As described above, the present invention has the effect of being able to properly detect scratches by distinguishing the dividing line from scratches, and is particularly useful for a scratch detection method suitable for a DBG program.

10、20‧‧‧保持台10, 20‧‧‧ holding table

11‧‧‧切削進給機構11‧‧‧ cutting feed mechanism

12‧‧‧切削刀12‧‧‧ Cutter

21‧‧‧多孔板21‧‧‧ multi-well plate

21a‧‧‧保持面21a‧‧‧ keep face

22‧‧‧框體22‧‧‧Frame

23‧‧‧工作台旋轉機構23‧‧‧table rotation mechanism

30‧‧‧磨削機構30‧‧‧Grinding mechanism

31‧‧‧主軸31‧‧‧ Spindle

32‧‧‧磨削輪32‧‧‧Grinding Wheel

33‧‧‧安裝座33‧‧‧Mount

34‧‧‧磨削磨石34‧‧‧ grinding stone

34a‧‧‧磨削面34a‧‧‧ ground

35‧‧‧磨削進給機構35‧‧‧Grinding feed mechanism

40‧‧‧刮痕檢測機構40‧‧‧Scratch detection agency

41‧‧‧攝像機構41‧‧‧camera

42‧‧‧判斷機構42‧‧‧ Judgment agency

43‧‧‧線型感測器43‧‧‧Linear Sensor

44‧‧‧光源44‧‧‧light source

45‧‧‧編輯部45‧‧‧ Editorial Department

46‧‧‧判斷部46‧‧‧Judgment Department

A‧‧‧箭頭A‧‧‧arrow

D‧‧‧寬度D‧‧‧Width

L‧‧‧分割線L‧‧‧ dividing line

LA ‧‧‧曲線L A ‧‧‧ Curve

S‧‧‧刮痕S‧‧‧ scratch

SA 、SB ‧‧‧直線S A , S B ‧‧‧Straight

T1、T2‧‧‧保護膠帶T1, T2‧‧‧protective tape

V‧‧‧分割溝V‧‧‧ Divided trench

W‧‧‧晶圓W‧‧‧ Wafer

圖1是顯示本實施形態的加工溝形成步驟之一例的示意圖。 圖2A、2B是顯示本實施形態的磨削步驟之一例的示意圖。 圖3A~3D是顯示本實施形態的攝像步驟之一例的示意圖。 圖4是顯示本實施形態的編輯步驟之一例的示意圖。 圖5是顯示本實施形態的去除步驟之一例的示意圖。 圖6是顯示本實施形態的判斷步驟之一例的示意圖。FIG. 1 is a schematic diagram showing an example of a processing groove forming step according to this embodiment. 2A and 2B are schematic views showing an example of a grinding step in the present embodiment. 3A to 3D are schematic diagrams showing an example of an imaging procedure in this embodiment. FIG. 4 is a schematic diagram showing an example of an editing procedure in the present embodiment. FIG. 5 is a schematic diagram showing an example of a removal step in the present embodiment. FIG. 6 is a schematic diagram showing an example of a judging procedure in this embodiment.

Claims (2)

一種刮痕檢測方法,是在晶圓的分割中檢測刮痕的有無,其中該晶圓的分割是於正面形成有以分割預定線區劃而形成有元件的晶圓上,從正面側沿著該分割預定線形成未完全切斷的深度的分割溝之後,以磨削磨石磨削背面,來使該分割溝露出於背面側而分割晶圓,且該刮痕檢測方法是以攝像機構拍攝已藉該磨削磨石磨削的晶圓的背面的被磨削面來檢測刮痕的有無, 該攝像機構具備拍攝在晶圓的半徑方向上延伸的被磨削面的線型感測器、及平行於該線型感測器而延伸且照明該被磨削面的光源, 該刮痕檢測方法具備下述步驟: 攝像步驟,將該攝像機構在晶圓的半徑內將延伸方向平行於徑方向來定位,並使保持晶圓的保持台以該晶圓的中心為軸旋轉,而使該攝像機構環狀地拍攝該被磨削面,以取得藉由該光源的光在該分割溝與該刮痕散射而成的散射光所形成的拍攝圖像; 去除步驟,從在該攝像步驟中所拍攝到的該拍攝圖像中移除相當於該分割溝的格子狀的直線;及 判斷步驟,在該去除步驟後的圖像中有規定寬度以上的圓弧線或直線時,即判斷為有刮痕產生。A scratch detection method is to detect the presence or absence of scratches in a wafer division. The wafer division is formed on a wafer on the front surface where a component is formed by dividing a predetermined line division. After dividing the predetermined line to form a division groove with a depth that is not completely cut, the back surface is ground with a grinding stone to expose the division groove to the back side and the wafer is divided. The presence or absence of scratches is detected by the ground surface of the back surface of the wafer ground by the grinding stone. The imaging mechanism includes a linear sensor that captures the ground surface extending in the radial direction of the wafer, and A light source extending parallel to the linear sensor and illuminating the surface to be ground, the scratch detection method includes the following steps: an imaging step, the imaging mechanism is arranged to extend the direction of the imaging mechanism parallel to the radial direction within the radius of the wafer Positioning, and rotating the holding table holding the wafer around the center of the wafer, so that the imaging mechanism annularly photographs the ground surface to obtain light from the light source in the dividing groove and the scraping Scattered light A formed photographic image; a removing step of removing a grid-like straight line corresponding to the dividing groove from the photographed image captured in the photographing step; and a judging step in the image after the removing step If there is an arc line or straight line with a predetermined width or more, it is judged that scratches have occurred. 如請求項1之刮痕檢測方法,其中該光源的亮度是調節成該攝像機構無法拍攝藉由該磨削磨石形成在晶圓上的磨削痕跡之亮度。According to the scratch detection method of claim 1, wherein the brightness of the light source is adjusted so that the camera mechanism cannot capture the brightness of the grinding marks formed on the wafer by the grinding stone.
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