TW201814766A - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- TW201814766A TW201814766A TW106125288A TW106125288A TW201814766A TW 201814766 A TW201814766 A TW 201814766A TW 106125288 A TW106125288 A TW 106125288A TW 106125288 A TW106125288 A TW 106125288A TW 201814766 A TW201814766 A TW 201814766A
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- 238000012545 processing Methods 0.000 title claims abstract description 141
- 238000003672 processing method Methods 0.000 title claims description 10
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- 230000007246 mechanism Effects 0.000 claims abstract description 86
- 230000002093 peripheral effect Effects 0.000 claims description 51
- 238000007789 sealing Methods 0.000 claims description 37
- 238000011282 treatment Methods 0.000 claims description 27
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- 238000005530 etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000011084 recovery Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 230000001174 ascending effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
本發明係關於對基板進行處理之技術。 The present invention relates to techniques for processing substrates.
習知，半導體基板(以下，簡稱為「基板」)之製程係使用基板處理裝置來對基板施以各種處理。例如，日本專利特開2014-49606號公報(文獻1)之基板處理裝置，係於對基板供給蝕刻液等之藥液而進行藥液處理之後，供給純水等之沖洗液而進行沖洗處理。又，於沖洗處理結束後，以異丙醇(IPA；Isopropyl alcohol)等之置換液來置換基板上之沖洗液，並使基板以高速旋轉來進行乾燥處理。 Conventionally, a process of a semiconductor substrate (hereinafter simply referred to as "substrate") uses a substrate processing apparatus to apply various processes to the substrate. For example, the substrate processing apparatus of the Japanese Patent Publication No. 2014-49606 (Document 1) supplies a chemical liquid such as an etching liquid to a substrate, and then supplies a rinsing liquid such as pure water to perform rinsing treatment. Further, after the completion of the rinsing treatment, the rinsing liquid on the substrate is replaced with a replacement liquid such as isopropyl alcohol (IPA; Isopropyl alcohol), and the substrate is subjected to a drying treatment by rotating at a high speed.
如此之基板處理裝置，為了將已使用於藥液處理之藥液再利用，故將藥液自其他處理液分離而加以回收。例如，引用文獻1之基板處理裝置在進行藥液處理時，藉由位於開放位置之腔室外側之第2杯部來承接自基板飛濺之藥液。又，在進行沖洗處理時，藉由位於第2杯部外側之第1杯部來承接自基板飛濺之沖洗液。此外，在進行乾燥處理時，使腔室封閉，而藉由腔室側壁部來承接自基板飛濺之置換液。 In such a substrate processing apparatus, in order to reuse the chemical liquid used for the chemical liquid treatment, the chemical liquid is separated from the other processing liquid and recovered. For example, in the substrate processing apparatus of Document 1, when the chemical liquid processing is performed, the chemical solution splashed from the substrate is received by the second cup portion located outside the chamber on the open position. Further, during the rinsing process, the rinsing liquid splashed from the substrate is received by the first cup portion located outside the second cup portion. Further, when the drying process is performed, the chamber is closed, and the replacement liquid splashed from the substrate is received by the side wall portion of the chamber.
然而，文獻1之基板處理裝置，需要使承接藥液之第2杯部沿著上下方向移動之第2杯升降機構、使承接沖洗液之第1杯部沿著上下方向移動之第1杯升降機構、及使腔室蓋部沿著上下 方向移動而形成承接置換液之腔室之腔室開閉機構。因此，於基板處理裝置中，使構成元件移動的機構增加，而使基板處理裝置的構造複雜化。 However, in the substrate processing apparatus of Document 1, the second cup elevating mechanism that moves the second cup portion of the chemical liquid in the vertical direction and the first cup that moves the first cup portion that receives the rinsing liquid in the vertical direction are required to be lifted and lowered. The mechanism and the chamber opening and closing mechanism that moves the chamber cover portion in the vertical direction to form a chamber for receiving the replacement fluid. Therefore, in the substrate processing apparatus, the mechanism for moving the constituent elements is increased, and the structure of the substrate processing apparatus is complicated.
本發明可應用於對基板進行處理之基板處理裝置，其目的在於一邊抑制使構成元件移動之機構的增加，一邊形成複數種類的密閉空間。本發明亦可應用於基板處理方法。 The present invention can be applied to a substrate processing apparatus that processes a substrate, and an object thereof is to form a plurality of types of sealed spaces while suppressing an increase in a mechanism for moving the constituent elements. The invention can also be applied to a substrate processing method.
本發明之基板處理裝置具備有：腔室，其具有腔室本體及腔室蓋部，並藉由利用上述腔室蓋部封閉上述腔室本體之上部開口來形成包含上述腔室本體及上述腔室蓋部之腔室密閉構造；腔室開閉機構，其使上述腔室蓋部相對於上述腔室本體而沿著上下方向相對地移動；基板保持部，其係配置於上述腔室內，以水平狀態保持基板；基板旋轉機構，其以朝向上述上下方向之中心軸為中心使上述基板與上述基板保持部一起旋轉；處理液供給部，其對上述基板上供給處理液；第1杯部，其遍及全周地位於藉由上述腔室蓋部自上述腔室本體離開而在上述基板之周圍所形成之環狀開口的徑向外側，以承接自旋轉之上述基板飛濺之處理液；杯部移動機構，其使上述第1杯部在上述環狀開口之徑向外側之第1位置與較上述第1位置更下方之第2位置之間沿著上述上下方向移動；以及第2杯部，其係配置於上述第1杯部之上側，在上述第1杯部位於上述第2位置之狀態下遍及全周地位於上述環狀開口的徑向外側，以承接自旋轉之上述基板飛濺之處理液。上述第2杯部藉由上述腔室開閉機構或上述杯部移動機構而沿著上述上下方向移動。在形成有上述環狀開口之狀態下，藉由位於上述第1位置之上述第1杯部接觸 於上述腔室蓋部及上述腔室本體而形成包含上述腔室蓋部、上述腔室本體及上述第1杯部之第1外部密閉構造。在形成有上述環狀開口之狀態下，藉由上述第2杯部接觸於上述腔室蓋部及位於上述第2位置之上述第1杯部，而形成包含上述腔室蓋部、上述腔室本體、上述第1杯部及上述第2杯部之第2外部密閉構造。根據該基板處理裝置，可一邊抑制使構成元件移動之機構的增加，一邊形成複數種類的密閉空間。 The substrate processing apparatus of the present invention includes: a chamber having a chamber body and a chamber cover portion, and forming the chamber body and the cavity by closing the upper opening of the chamber body by using the chamber cover portion a chamber sealing structure of the chamber cover portion; the chamber opening and closing mechanism relatively moving the chamber lid portion in the up and down direction with respect to the chamber body; and the substrate holding portion disposed in the chamber to be horizontal a state maintaining substrate; a substrate rotating mechanism that rotates the substrate together with the substrate holding portion about a central axis of the vertical direction; a processing liquid supply unit that supplies a processing liquid to the substrate; and a first cup portion The treatment liquid splashed by the substrate which is rotated by the rotation of the substrate is formed on the radially outer side of the annular opening formed around the substrate by the chamber cover portion from the chamber body over the entire circumference; the cup portion is moved. a mechanism that moves the first cup portion between the first position on the radially outer side of the annular opening and the second position that is lower than the first position along the vertical direction And the second cup portion is disposed on the upper side of the first cup portion, and is located on a radially outer side of the annular opening over the entire circumference in a state in which the first cup portion is located at the second position to receive Rotating the above-mentioned substrate splashing treatment liquid. The second cup portion is moved in the vertical direction by the chamber opening and closing mechanism or the cup moving mechanism. In a state in which the annular opening is formed, the first cup portion located at the first position contacts the chamber cover portion and the chamber body to form the chamber cover portion, the chamber body, and The first outer sealed structure of the first cup portion. In a state in which the annular opening is formed, the second cup portion is in contact with the chamber cover portion and the first cup portion located at the second position, thereby forming the chamber cover portion and the chamber. a second external sealing structure of the main body, the first cup portion, and the second cup portion. According to the substrate processing apparatus, a plurality of types of sealed spaces can be formed while suppressing an increase in a mechanism for moving the constituent elements.
在本發明一較佳實施形態中，上述第2杯部之內周緣部與上述腔室蓋部之外周緣部沿著上下方向重疊，在上述腔室蓋部封閉上述腔室本體之上述上部開口之狀態下，上述第2杯部由上述第1杯部所支撐，而上述第2杯部之上述內周緣部朝上方離開上述腔室蓋部之上述外周緣部，在上述腔室蓋部藉由上述腔室開閉機構而朝離開上述腔室本體之方向相對地移動時，上述第2杯部之上述內周緣部由上述腔室蓋部之上述外周緣部所支撐，而上述第2杯部與上述腔室蓋部一起相對於上述腔室本體相對地移動。 In a preferred embodiment of the present invention, the inner peripheral edge portion of the second cup portion overlaps the outer peripheral edge portion of the chamber cover portion in the vertical direction, and the upper opening of the chamber body is closed in the chamber cover portion. In the state in which the second cup portion is supported by the first cup portion, the inner peripheral edge portion of the second cup portion is separated upward from the outer peripheral edge portion of the chamber cover portion, and the chamber cover portion is borrowed from the chamber cover portion. When the chamber opening and closing mechanism relatively moves in a direction away from the chamber body, the inner peripheral edge portion of the second cup portion is supported by the outer peripheral edge portion of the chamber cover portion, and the second cup portion is supported The lens chamber portion is relatively moved with respect to the chamber body together with the chamber cover portion.
更佳為，上述第1杯部在與上述第2杯部接觸之位置，具備有於與上述第2杯部之間遍及全周地形成密封之杯密封部。 More preferably, the first cup portion is provided with a cup sealing portion that forms a seal over the entire circumference between the second cup portion and the second cup portion.
在本發明另一較佳之實施形態中，上述第2杯部之外徑係上述第1杯部之外徑以下。 In still another preferred embodiment of the present invention, an outer diameter of the second cup portion is equal to or smaller than an outer diameter of the first cup portion.
本發明之基板處理方法係於以下之基板處理裝置中對基板進行處理之方法。該基板處理裝置具備有：腔室，其具有腔室本體及腔室蓋部，並藉由利用上述腔室蓋部封閉上述腔室本體之上部開口來形成包含上述腔室本體及上述腔室蓋部之腔室密閉構造；腔室開閉機構，其使上述腔室蓋部相對於上述腔室本體而沿著 上下方向相對地移動；基板保持部，其係配置於上述腔室內，以水平狀態保持基板；基板旋轉機構，其以朝向上述上下方向之中心軸為中心使上述基板與上述基板保持部一起旋轉；處理液供給部，其對上述基板上供給處理液；第1杯部，其遍及全周地位於藉由上述腔室蓋部自上述腔室本體離開而在上述基板之周圍所形成之環狀開口的徑向外側，以承接自旋轉之上述基板飛濺之處理液；以及杯部移動機構，其使上述第1杯部在上述環狀開口之徑向外側之第1位置與較上述第1位置更下方之第2位置之間沿著上述上下方向移動。上述基板處理裝置進一步具備有第2杯部，該第2杯部係配置於上述第1杯部之上側，在上述第1杯部位於上述第2位置之狀態下遍及全周地位於上述環狀開口的徑向外側，以承接自旋轉之上述基板飛濺之處理液。上述第2杯部藉由上述腔室開閉機構或上述杯部移動機構而沿著上述上下方向移動。上述基板處理方法具備有：a)在形成有上述環狀開口之狀態下，藉由使上述第1杯部在上述第1位置接觸於上述腔室蓋部及上述腔室本體，而形成包含上述腔室蓋部、上述腔室本體及上述第1杯部之第1外部密閉構造的步驟；b)於上述a)步驟之後，在上述第1外部密閉構造內，對旋轉中之上述基板供給第1處理液，並由上述第1杯部承接自上述基板飛濺之上述第1處理液的步驟；c)藉由利用上述腔室蓋部封閉上述腔室本體之上述上部開口，來形成上述腔室密閉構造的步驟；d)於上述c)步驟之後，在上述腔室密閉構造內，對旋轉中之上述基板供給第2處理液，並由上述腔室承接自上述基板飛濺之上述第2處理液的步驟；e)在形成有上述環狀開口之狀態下，藉由使上述第2杯部接觸於上述腔室蓋部及位於上述第2位置之上述第1杯部而形成包 含上述腔室蓋部、上述腔室本體、上述第1杯部及上述第2杯部之第2外部密閉構造的步驟；以及f)於上述e)步驟之後，在上述第2外部密閉構造內，對旋轉中之上述基板供給第3處理液，並由上述第2杯部承接自上述基板飛濺之上述第3處理液的步驟。根據該基板處理方法，可一邊抑制複數種類之處理液的混液，一邊分別在適合複數種類之處理之種類的密閉空間進行該複數種類之處理。 The substrate processing method of the present invention is a method of processing a substrate in the following substrate processing apparatus. The substrate processing apparatus includes a chamber having a chamber body and a chamber cover, and forming the chamber body and the chamber cover by closing the upper opening of the chamber body by using the chamber cover portion a chamber sealing structure; a chamber opening and closing mechanism that relatively moves the chamber cover portion in an up-and-down direction with respect to the chamber body; and a substrate holding portion disposed in the chamber to be maintained in a horizontal state a substrate rotating mechanism that rotates the substrate together with the substrate holding portion about a central axis in the vertical direction; a processing liquid supply unit that supplies a processing liquid to the substrate; and a first cup portion that covers the entire surface a circumferentially located radially outward side of the annular opening formed around the substrate by the chamber cover portion from the chamber body, to receive a treatment liquid splashed from the rotating substrate; and a cup moving mechanism And moving the first cup portion along the vertical direction between a first position on a radially outer side of the annular opening and a second position lower than the first positionFurther, the substrate processing apparatus further includes a second cup portion that is disposed on the upper side of the first cup portion and that is located in the ring shape over the entire circumference in a state where the first cup portion is located at the second position. The radial outer side of the opening receives the treatment liquid splashed from the substrate which is rotated. The second cup portion is moved in the vertical direction by the chamber opening and closing mechanism or the cup moving mechanism. The substrate processing method includes: a) forming the above-described annular opening in a state in which the first cup portion is in contact with the chamber cover portion and the chamber body at the first position, and the method includes a step of the chamber cover portion, the chamber body, and the first outer sealing structure of the first cup portion; b) after the step a), supplying the substrate during rotation in the first outer sealing structure a processing liquid, wherein the first cup portion receives the first processing liquid splashed from the substrate; c) forming the chamber by closing the upper opening of the chamber body by the chamber lid portion a step of sealing the structure; d) after the step c), supplying the second processing liquid to the rotating substrate in the chamber sealing structure, and receiving the second processing liquid splashed from the substrate by the chamber And e) forming the chamber cover by contacting the second cup portion with the chamber cover portion and the first cup portion at the second position in a state in which the annular opening is formed Department, the above chamber body, a step of the second outer sealing structure of the first cup portion and the second cup portion; and f) after the step e), supplying the third processing liquid to the rotating substrate in the second outer sealing structure And the step of receiving the third processing liquid splashed from the substrate by the second cup portion. According to the substrate processing method, the plurality of types of processing can be performed in a sealed space suitable for a plurality of types of processing while suppressing the mixing of the plurality of types of processing liquids.
前述之目的及其他目的、特徵、態樣及優點，係參照所附圖式並藉由以下所進行本發明之詳細說明而明確化。 The above and other objects, features, aspects and advantages of the present invention are apparent from the accompanying drawings.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
9‧‧‧基板 9‧‧‧Substrate
10‧‧‧控制部 10‧‧‧Control Department
12‧‧‧腔室 12‧‧‧ chamber
14‧‧‧基板保持部 14‧‧‧Substrate retention department
15‧‧‧基板旋轉機構 15‧‧‧Substrate rotation mechanism
16‧‧‧液承接部 16‧‧‧Liquid Acceptance Department
17‧‧‧外罩 17‧‧‧ Cover
18‧‧‧氣液供給部 18‧‧‧Gas and Liquid Supply Department
19‧‧‧氣液排出部 19‧‧‧ gas and liquid discharge
81‧‧‧環狀開口 81‧‧‧ annular opening
91‧‧‧上表面 91‧‧‧Upper surface
92‧‧‧下表面 92‧‧‧ lower surface
100‧‧‧第1擴大密閉空間 100‧‧‧1st expanded confined space
110‧‧‧第2擴大密閉空間 110‧‧‧2nd expanded confined space
120‧‧‧腔室空間 120‧‧‧chamber space
121‧‧‧腔室本體 121‧‧‧ chamber body
122‧‧‧腔室蓋部 122‧‧‧Cell cover
123‧‧‧頂板 123‧‧‧ top board
125‧‧‧凸緣部 125‧‧‧Flange
131‧‧‧腔室開閉機構 131‧‧‧Case opening and closing mechanism
141‧‧‧基板支撐部 141‧‧‧Substrate support
142‧‧‧基板按壓部 142‧‧‧Substrate pressing unit
151‧‧‧定子部 151‧‧‧ stator
152‧‧‧轉子部 152‧‧‧Rotor Department
160‧‧‧第1側方空間 160‧‧‧1st side space
161‧‧‧第1杯部 161‧‧‧1st Cup
162‧‧‧杯部移動機構 162‧‧‧ Cup mobile agency
163‧‧‧杯對向部 163‧‧‧ Cup Opposite Department
164‧‧‧第2杯部 164‧‧‧Part 2
165‧‧‧液承接凹部 165‧‧‧Liquid receiving recess
169‧‧‧第2側方空間 169‧‧‧2nd side space
180‧‧‧處理液供給部 180‧‧‧Processing liquid supply department
181‧‧‧上部噴嘴 181‧‧‧ upper nozzle
182‧‧‧下部噴嘴 182‧‧‧ lower nozzle
183‧‧‧藥液供給部 183‧‧‧Drug supply department
184‧‧‧沖洗液供給部 184‧‧‧ rinse liquid supply department
185‧‧‧置換液供給部 185‧‧‧ Replacement Fluid Supply Department
186‧‧‧惰性氣體供給部 186‧‧‧Inert gas supply
191‧‧‧排出路 191‧‧‧Discharge road
192‧‧‧氣液分離部 192‧‧ ‧ gas-liquid separation department
192a‧‧‧排氣部 192a‧‧‧Exhaust Department
192b‧‧‧排液部 192b‧‧‧Draining Department
192c‧‧‧液回收部 192c‧‧‧Liquid recovery department
193‧‧‧排出路 193‧‧‧discharge road
194‧‧‧氣液分離部 194‧‧‧Gas-liquid separation department
194a‧‧‧排氣部 194a‧‧‧Exhaust Department
194b‧‧‧排液部 194b‧‧‧Draining Department
195‧‧‧排出路 195‧‧‧Discharge road
196‧‧‧氣液分離部 196‧‧‧Gas-liquid separation department
196a‧‧‧排氣部 196a‧‧‧Exhaust Department
196b‧‧‧排液部 196b‧‧‧Draining Department
210‧‧‧腔室底部 210‧‧‧Bottom of the chamber
211‧‧‧中央部 211‧‧‧ Central Department
212‧‧‧內側壁部 212‧‧‧Inside wall
213‧‧‧環狀底部 213‧‧‧ring bottom
214‧‧‧腔室側壁部 214‧‧‧The side wall of the chamber
215‧‧‧外側壁部 215‧‧‧Outer side wall
216‧‧‧基座部 216‧‧‧Base section
217‧‧‧下部環狀空間 217‧‧‧Lower annular space
222‧‧‧板保持部 222‧‧‧ Board Maintenance Department
223‧‧‧筒部 223‧‧‧ Tube
224‧‧‧(腔室蓋部之)凸緣部 224‧‧‧ (of the chamber cover) flange
231‧‧‧唇形密封 231‧‧‧Lip seal
237‧‧‧被保持部 237‧‧‧ Keeped Department
238‧‧‧筒部 238‧‧‧ Tube
239‧‧‧凸緣部 239‧‧‧Flange
241‧‧‧第1卡合部 241‧‧‧1st engagement
242‧‧‧第2卡合部 242‧‧‧2nd merging department
251‧‧‧唇形密封 251‧‧‧Lip seal
252‧‧‧唇形密封 252‧‧‧Lip seal
411‧‧‧第1接觸部 411‧‧‧1st contact
413‧‧‧支撐部基座 413‧‧‧Support base
421‧‧‧第2接觸部 421‧‧‧2nd contact
611‧‧‧側壁部 611‧‧‧ Sidewall
612‧‧‧上表面部 612‧‧‧Upper surface
613‧‧‧唇形密封 613‧‧‧Lip seal
617‧‧‧伸縮管 617‧‧‧ telescopic tube
641‧‧‧側壁部 641‧‧‧ Sidewall
642‧‧‧上表面部 642‧‧‧Upper surface
J1‧‧‧中心軸 J1‧‧‧ central axis
S11~S20‧‧‧步驟 S11~S20‧‧‧Steps
圖1係一實施形態之基板處理裝置之剖視圖。 Fig. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment.
圖2係顯示氣液供給部及氣液排出部之方塊圖。 Fig. 2 is a block diagram showing a gas-liquid supply unit and a gas-liquid discharge unit.
圖3係顯示基板處理裝置之處理流程之圖。 Fig. 3 is a view showing a processing flow of the substrate processing apparatus.
圖4係基板處理裝置之剖視圖。 4 is a cross-sectional view of a substrate processing apparatus.
圖5係基板處理裝置之剖視圖。 Figure 5 is a cross-sectional view of the substrate processing apparatus.
圖6係基板處理裝置之剖視圖。 Figure 6 is a cross-sectional view of the substrate processing apparatus.
圖1係顯示本發明一實施形態之基板處理裝置1之剖視圖。基板處理裝置1係對大致圓板狀之半導體基板9(以下，簡稱為「基板9」)供給處理液而一次一片地處理基板9之單片式裝置。在圖1中，基板處理裝置1一部分構成之剖面，省略平行斜線之標示(於其他剖視圖中亦相同)。 Fig. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a one-chip apparatus in which the processing liquid is supplied to the substantially circular disk-shaped semiconductor substrate 9 (hereinafter simply referred to as "substrate 9"), and the substrate 9 is processed one at a time. In Fig. 1, a part of the substrate processing apparatus 1 is formed into a cross section, and the indication of parallel oblique lines is omitted (the same is true in other cross-sectional views).
基板處理裝置1具備有腔室12、頂板123、腔室開閉機構131、基板保持部14、基板旋轉機構15、液承接部16、外罩 17。外罩17覆蓋腔室12之上方及側方。 The substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening and closing mechanism 131, a substrate holding portion 14, a substrate rotating mechanism 15, a liquid receiving portion 16, and a cover 17. The outer cover 17 covers the upper side and the side of the chamber 12.
腔室12具備有腔室本體121、及腔室蓋部122。腔室12係以朝向上下方向之中心軸J1為中心之大致圓筒狀。腔室本體121具備有腔室底部210、及腔室側壁部214。腔室底部210具備有中央部211、內側壁部212、環狀底部213、及外側壁部215。中央部211係以中心軸J1為中心之大致圓板狀之部位。內側壁部212係自中央部211之外周緣部朝向下方擴展之大致圓筒狀之部位。環狀底部213係自內側壁部212之下端朝向徑向外側擴展之大致圓環板狀之部位。外側壁部215係自環狀底部213之外周緣部朝向上方擴展之大致圓筒狀之部位。於外側壁部215之上端部，連接有朝向徑向外側擴展之大致圓環板狀之基座部216。 The chamber 12 is provided with a chamber body 121 and a chamber cover portion 122. The chamber 12 has a substantially cylindrical shape centering on the central axis J1 in the vertical direction. The chamber body 121 is provided with a chamber bottom portion 210 and a chamber side wall portion 214. The chamber bottom portion 210 includes a central portion 211, an inner side wall portion 212, an annular bottom portion 213, and an outer side wall portion 215. The central portion 211 is a substantially disk-shaped portion centered on the central axis J1. The inner wall portion 212 is a substantially cylindrical portion that expands downward from the outer peripheral portion of the central portion 211. The annular bottom portion 213 is a substantially annular plate-like portion that expands from the lower end of the inner side wall portion 212 toward the radially outer side. The outer wall portion 215 is a substantially cylindrical portion that expands upward from the outer peripheral portion of the annular bottom portion 213. A substantially annular plate-shaped base portion 216 that expands outward in the radial direction is connected to an upper end portion of the outer wall portion 215.
腔室側壁部214係以中心軸J1為中心之環狀之部位。腔室側壁部214自外側壁部215之上端部(即基座部216之內周緣部)朝向上方突出。如後所述，形成腔室側壁部214之構件兼作為液承接部16之一部分。在以下之說明中，將由腔室側壁部214、外側壁部215、環狀底部213、內側壁部212、與中央部211之外周緣部所包圍之空間稱為「下部環狀空間217」。換言之，腔室12於腔室底部210之外周部，具備有較中央部211更朝下方凹陷之大致圓筒狀之下部環狀空間217。 The chamber side wall portion 214 is an annular portion centered on the central axis J1. The chamber side wall portion 214 protrudes upward from the upper end portion of the outer side wall portion 215 (that is, the inner peripheral edge portion of the base portion 216). As will be described later, the member forming the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16. In the following description, the space surrounded by the chamber side wall portion 214, the outer wall portion 215, the annular bottom portion 213, the inner side wall portion 212, and the outer peripheral portion of the center portion 211 will be referred to as a "lower annular space 217". In other words, the chamber 12 is provided with a substantially cylindrical lower annular space 217 which is recessed downward from the central portion 211 at the outer peripheral portion of the chamber bottom portion 210.
於基板9被支撐在基板保持部14之基板支撐部141(後述)之情形時，基板9之外周緣部(即包含基板9之外周緣之外周緣附近之部位)位於下部環狀空間217之上方。換言之，基板9之下表面92之外周緣部沿著上下方向與下部環狀空間217對向。又，基板9之下表面92除了外周緣部之部位，沿著上下方向與腔 室底部210之中央部211之上表面對向。 When the substrate 9 is supported by the substrate supporting portion 141 (described later) of the substrate holding portion 14, the outer peripheral portion of the substrate 9 (i.e., the portion including the periphery of the periphery other than the outer periphery of the substrate 9) is located in the lower annular space 217. Above. In other words, the outer peripheral portion of the lower surface 92 of the substrate 9 faces the lower annular space 217 in the vertical direction. Further, the lower surface 92 of the substrate 9 faces the upper surface of the central portion 211 of the chamber bottom portion 210 in the vertical direction except for the portion of the outer peripheral portion.
腔室蓋部122係垂直於中心軸J1之大致圓板狀，且包含腔室12之上部。腔室蓋部122封閉腔室本體121之上部開口。圖1顯示腔室蓋部122朝上方離開腔室本體121之狀態。於腔室蓋部122封閉腔室本體121之上部開口時，腔室蓋部122之下端部與腔室側壁部214之上部接觸。 The chamber cover portion 122 is substantially disk-shaped perpendicular to the central axis J1 and includes an upper portion of the chamber 12. The chamber cover 122 closes the upper opening of the chamber body 121. FIG. 1 shows a state in which the chamber cover portion 122 is separated upward from the chamber body 121. When the chamber cover portion 122 closes the upper opening of the chamber body 121, the lower end portion of the chamber cover portion 122 comes into contact with the upper portion of the chamber side wall portion 214.
腔室開閉機構131使作為腔室12之可動部之腔室蓋部122，相對於作為腔室12之其他部位之腔室本體121而沿著上下方向相對地移動。腔室開閉機構131係對腔室蓋部122進行升降之蓋部升降機構。在腔室蓋部122藉由腔室開閉機構131而自圖1所示之位置沿著上下方向移動時，頂板123亦與腔室蓋部122一起沿著上下方向移動。腔室蓋部122與腔室本體121相接而封閉上部開口，而且，腔室蓋部122朝向腔室本體121被推壓，藉此於腔室12內形成被密閉之腔室空間120(參照圖5)。換言之，藉由腔室本體121之上部開口由腔室蓋部122所封閉，而形成包含腔室本體121及腔室蓋部122之腔室密閉構造。 The chamber opening and closing mechanism 131 relatively moves the chamber cover portion 122, which is the movable portion of the chamber 12, in the vertical direction with respect to the chamber body 121 which is another portion of the chamber 12. The chamber opening and closing mechanism 131 is a lid elevating mechanism that elevates and lowers the chamber lid portion 122. When the chamber cover portion 122 is moved in the vertical direction from the position shown in FIG. 1 by the chamber opening and closing mechanism 131, the top plate 123 also moves in the vertical direction together with the chamber cover portion 122. The chamber cover portion 122 is in contact with the chamber body 121 to close the upper opening, and the chamber cover portion 122 is pressed toward the chamber body 121, thereby forming a sealed chamber space 120 in the chamber 12 (refer to Figure 5). In other words, by the opening of the upper portion of the chamber body 121 being closed by the chamber cover portion 122, a chamber sealing structure including the chamber body 121 and the chamber cover portion 122 is formed.
基板保持部14係配置於腔室12內(即腔室空間120)，而以水平狀態保持基板9。具體而言，基板9係將形成有微細圖案之一主面91(以下，稱為「上表面91」)，以垂直於中心軸J1地朝向上側之狀態，由基板保持部14所保持。基板保持部14具備有自下側支撐基板9之外周緣部之前述之基板支撐部141、及自上側按壓被支撐於基板支撐部141之基板9之外周緣部之基板按壓部142。基板支撐部141係以中心軸J1為中心之大致圓環狀。基板支撐部141具備有以中心軸J1為中心之大致圓環板狀之支撐部基 座413、及被固定於支撐部基座413之上表面之複數個第1接觸部411。基板按壓部142具備有被固定於頂板123之下表面之複數個第2接觸部421。實際上，複數個第2接觸部421之圓周方向之位置，與複數個第1接觸部411之圓周方向之位置不同。 The substrate holding portion 14 is disposed in the chamber 12 (i.e., the chamber space 120) to hold the substrate 9 in a horizontal state. Specifically, the substrate 9 is formed by the substrate holding portion 14 in a state in which one of the main faces 91 (hereinafter referred to as "upper surface 91") of the fine pattern is formed to face the upper side perpendicular to the central axis J1. The substrate holding portion 14 includes the above-described substrate supporting portion 141 from the outer peripheral edge portion of the lower supporting substrate 9 and a substrate pressing portion 142 that presses the peripheral edge portion of the substrate 9 supported by the substrate supporting portion 141 from the upper side. The substrate supporting portion 141 has a substantially annular shape centering on the central axis J1. The substrate supporting portion 141 includes a substantially annular plate-shaped supporting portion base 413 centered on the central axis J1, and a plurality of first contact portions 411 fixed to the upper surface of the supporting portion base 413. The substrate pressing portion 142 includes a plurality of second contact portions 421 that are fixed to the lower surface of the top plate 123. Actually, the position of the plurality of second contact portions 421 in the circumferential direction is different from the position of the plurality of first contact portions 411 in the circumferential direction.
頂板123係以中心軸J1為中心之大致圓板狀之構件。頂板123係配置於腔室蓋部122之下方且基板支撐部141之上方。頂板123於中央具有開口。若基板9被支撐於基板支撐部141，基板9之上表面91便與大致垂直於中心軸J1之頂板123之下表面對向。頂板123之直徑較基板9之直徑大，頂板123之外周緣遍及全周地位於較基板9之外周緣更靠徑向外側。頂板123係自周圍的空間實質地遮蔽基板9之上表面91上之空間的遮蔽板。 The top plate 123 is a substantially disk-shaped member centered on the central axis J1. The top plate 123 is disposed below the chamber cover portion 122 and above the substrate support portion 141. The top plate 123 has an opening in the center. If the substrate 9 is supported by the substrate supporting portion 141, the upper surface 91 of the substrate 9 opposes the lower surface of the top plate 123 substantially perpendicular to the central axis J1. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer periphery of the top plate 123 is located radially outward of the outer periphery of the substrate 9 over the entire circumference. The top plate 123 is a shielding plate that substantially shields the space on the upper surface 91 of the substrate 9 from the surrounding space.
圖1所示之狀態，頂板123係由腔室蓋部122懸吊而被支撐。腔室蓋部122於中央部具有大致環狀之板保持部222。板保持部222具備有以中心軸J1為中心之大致圓筒狀之筒部223、及以中心軸J1為中心之大致圓板狀之凸緣部224。凸緣部224自筒部223之下端朝向徑向內側擴展。 In the state shown in Fig. 1, the top plate 123 is suspended by the chamber cover portion 122 to be supported. The chamber cover portion 122 has a substantially annular plate holding portion 222 at the center portion. The plate holding portion 222 includes a substantially cylindrical tubular portion 223 centered on the central axis J1 and a substantially disk-shaped flange portion 224 centered on the central axis J1. The flange portion 224 extends from the lower end of the tubular portion 223 toward the radially inner side.
頂板123具備有環狀之被保持部237。被保持部237具備有以中心軸J1為中心之大致圓筒狀之筒部238、及以中心軸J1為中心之大致圓板狀之凸緣部239。筒部238自頂板123之上表面朝上方擴展。凸緣部239自筒部238之上端朝向徑向外側擴展。筒部238位於板保持部222之筒部223的徑向內側。凸緣部239位於板保持部222之凸緣部224之上方，與凸緣部224沿著上下方向上對向。藉由被保持部237之凸緣部239之下表面接觸於板保持部222之凸緣部224之上表面，頂板123以自腔室蓋部122懸吊之狀態被 安裝於腔室蓋部122。 The top plate 123 is provided with an annular holding portion 237. The held portion 237 includes a substantially cylindrical tubular portion 238 centered on the central axis J1 and a substantially disk-shaped flange portion 239 centered on the central axis J1. The tubular portion 238 spreads upward from the upper surface of the top plate 123. The flange portion 239 expands from the upper end of the tubular portion 238 toward the radially outer side. The tubular portion 238 is located radially inward of the tubular portion 223 of the plate holding portion 222. The flange portion 239 is located above the flange portion 224 of the plate holding portion 222 and faces the flange portion 224 in the vertical direction. The lower surface 123 is attached to the chamber cover portion 122 in a state of being suspended from the chamber cover portion 122 by the lower surface of the flange portion 239 of the held portion 237 contacting the upper surface of the flange portion 224 of the plate holding portion 222. .
於頂板123之外周緣部之下表面，複數個第1卡合部241沿著圓周方向被排列。於支撐部基座413之上表面，複數個第2卡合部242沿著圓周方向被排列。實際上，第1卡合部241及第2卡合部242、與基板支撐部141之複數個第1接觸部411及基板按壓部142之複數個第2接觸部421，係在圓周方向上被配置於不同的位置。該等卡合部較佳為設置3組以上，而在本實施形態中則設置有4組。於第1卡合部241之下部，設置有朝向上方凹陷之凹部。第2卡合部242自支撐部基座413朝向上方突出。 On the lower surface of the outer peripheral portion of the top plate 123, a plurality of first engaging portions 241 are arranged in the circumferential direction. On the upper surface of the support base 413, a plurality of second engaging portions 242 are arranged in the circumferential direction. In actuality, the first engagement portion 241 and the second engagement portion 242 and the plurality of first contact portions 411 of the substrate support portion 141 and the plurality of second contact portions 421 of the substrate pressing portion 142 are circumferentially Configured in different locations. Preferably, the engaging portions are provided in three or more sets, and in the present embodiment, four sets are provided. A recess recessed upward is provided in a lower portion of the first engaging portion 241. The second engagement portion 242 protrudes upward from the support portion base 413.
基板旋轉機構15係所謂中空馬達。基板旋轉機構15具備有以中心軸J1為中心之環狀之定子部151、及環狀之轉子部152。轉子部152包含大致圓環狀之永久磁鐵。永久磁鐵之表面係由PTFE(聚四氟乙烯)樹脂所成型(mold)。轉子部152係配置於腔室12內。較佳為，轉子部152之至少一部分被配置於下部環狀空間217內。在圖1所示之例子中，轉子部152之整體係配置於下部環狀空間217內。於轉子部152之上部，經由連接構件而安裝有基板支撐部141之支撐部基座413。支撐部基座413係配置於轉子部152之上方。 The substrate rotating mechanism 15 is a so-called hollow motor. The substrate rotating mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded from PTFE (polytetrafluoroethylene) resin. The rotor portion 152 is disposed in the chamber 12. Preferably, at least a portion of the rotor portion 152 is disposed in the lower annular space 217. In the example shown in FIG. 1, the entire rotor portion 152 is disposed in the lower annular space 217. A support base 413 of the substrate support portion 141 is attached to the upper portion of the rotor portion 152 via a connection member. The support base 413 is disposed above the rotor portion 152.
定子部151包含被排列於以中心軸J1為中心之圓周方向之複數個線圈。定子部151係配置於腔室12之外部。定子部151係配置於轉子部152之周圍、即被配置於轉子部152之徑向外側。在本實施形態中，定子部151係固定於腔室底部210之外側壁部215及基座部216，而位於液承接部16之下方。 The stator portion 151 includes a plurality of coils arranged in a circumferential direction around the central axis J1. The stator portion 151 is disposed outside the chamber 12. The stator portion 151 is disposed around the rotor portion 152 , that is, disposed radially outward of the rotor portion 152 . In the present embodiment, the stator portion 151 is fixed to the outer wall portion 215 and the base portion 216 of the chamber bottom portion 210, and is located below the liquid receiving portion 16.
藉由電流被供給至定子部151，而於定子部151與轉 子部152之間，產生以中心軸J1為中心之旋轉力。藉此，轉子部152以中心軸J1為中心而以水平狀態進行旋轉。藉由作用於定子部151與轉子部152之間之磁力，轉子部152於腔室12內既不直接亦不間接地與腔室12接觸而漂浮，並以中心軸J1為中心使基板9與基板支撐部141一起在漂浮狀態下進行旋轉。 A current is supplied to the stator portion 151, and a rotational force centering on the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor portion 152 rotates in a horizontal state centering on the central axis J1. By acting on the magnetic force between the stator portion 151 and the rotor portion 152, the rotor portion 152 floats in contact with the chamber 12 neither directly nor indirectly in the chamber 12, and the substrate 9 is centered on the central axis J1. The substrate supporting portion 141 rotates together in a floating state.
液承接部16具備有第1杯部161、杯部移動機構162、杯對向部163、及第2杯部164。第1杯部161係以中心軸J1為中心之環狀之構件。第1杯部161遍及全周地位於腔室12之徑向外側。杯部移動機構162使第1杯部161沿著上下方向移動。杯部移動機構162係配置於第1杯部161之徑向外側。杯部移動機構162係在圓周方向上被配置於與前述之腔室開閉機構131不同的位置。杯對向部163位於第1杯部161之下方，與第1杯部161沿著上下方向對向。杯對向部163係形成腔室側壁部214之構件之一部分。杯對向部163具有位於腔室側壁部214之徑向外側之環狀之液承接凹部165。 The liquid receiving portion 16 includes a first cup portion 161 , a cup moving mechanism 162 , a cup opposing portion 163 , and a second cup portion 164 . The first cup portion 161 is an annular member centering on the central axis J1. The first cup portion 161 is located radially outward of the chamber 12 over the entire circumference. The cup moving mechanism 162 moves the first cup portion 161 in the vertical direction. The cup moving mechanism 162 is disposed on the radially outer side of the first cup portion 161. The cup moving mechanism 162 is disposed at a position different from the above-described chamber opening and closing mechanism 131 in the circumferential direction. The cup opposing portion 163 is located below the first cup portion 161 and faces the first cup portion 161 in the vertical direction. The cup opposing portion 163 forms part of a member of the chamber sidewall portion 214. The cup opposing portion 163 has an annular liquid receiving recess 165 located radially outward of the chamber side wall portion 214.
第1杯部161具備有側壁部611、上表面部612、及伸縮管617。側壁部611係以中心軸J1為中心之大致圓筒狀。上表面部612係以中心軸J1為中心之大致圓環板狀，且自側壁部611之上端部朝向徑向內側及徑向外側擴展。上表面部612中，自側壁部611之上端部朝向徑向內側擴展之部位，係第1杯部161之頂蓋部。側壁部611之下部位於杯對向部163之液承接凹部165內。 The first cup portion 161 includes a side wall portion 611 , an upper surface portion 612 , and a bellows 617 . The side wall portion 611 has a substantially cylindrical shape centering on the central axis J1. The upper surface portion 612 has a substantially annular plate shape centering on the central axis J1, and extends from the upper end portion of the side wall portion 611 toward the radially inner side and the radially outer side. In the upper surface portion 612, a portion extending from the upper end portion of the side wall portion 611 toward the radially inner side is a top cover portion of the first cup portion 161. The lower portion of the side wall portion 611 is located in the liquid receiving recess 165 of the cup opposing portion 163.
伸縮管617係以中心軸J1為中心之大致圓筒狀，可沿上下方向伸縮。伸縮管617係於側壁部611之徑向外側遍及全周地被設置於側壁部611之周圍。伸縮管617係以氣體及液體無法通 過之材料所形成。伸縮管617之上端部係遍及全周地被連接於上表面部612之外周緣部之下表面。換言之，伸縮管617之上端部係經由上表面部612而間接地被連接於側壁部611。伸縮管617與上表面部612之連接部被密封，以防止氣體及液體之通過。伸縮管617之下端部係經由杯對向部163而間接地被連接於腔室本體121。伸縮管617之下端部與杯對向部163之連接部，亦防止氣體及液體之通過。 The extension tube 617 has a substantially cylindrical shape centering on the central axis J1 and is expandable and contractible in the vertical direction. The bellows 617 is provided on the outer side in the radial direction of the side wall portion 611 around the side wall portion 611 over the entire circumference. The bellows 617 is formed of a material through which gas and liquid cannot pass. The upper end portion of the bellows 617 is connected to the lower surface of the outer peripheral portion of the upper surface portion 612 over the entire circumference. In other words, the upper end portion of the extension tube 617 is indirectly connected to the side wall portion 611 via the upper surface portion 612. The connection portion of the bellows 617 and the upper surface portion 612 is sealed to prevent the passage of gas and liquid. The lower end of the bellows 617 is indirectly connected to the chamber body 121 via the cup opposing portion 163. The connection between the lower end of the telescopic tube 617 and the cup facing portion 163 also prevents the passage of gas and liquid.
第2杯部164與第1杯部161同樣地，為以中心軸J1為中心之環狀之構件。第2杯部164遍及全周地位於腔室12之徑向外側。第2杯部164係配置於第1杯部161之上側。換言之，第2杯部164與第1杯部161沿著上下方向重疊。 Similarly to the first cup portion 161, the second cup portion 164 is an annular member centering on the central axis J1. The second cup portion 164 is located radially outward of the chamber 12 over the entire circumference. The second cup portion 164 is disposed on the upper side of the first cup portion 161. In other words, the second cup portion 164 and the first cup portion 161 overlap in the vertical direction.
第2杯部164具備有側壁部641、及上表面部642。側壁部641係以中心軸J1為中心之大致圓筒狀。側壁部641之下部與第1杯部161之上表面部612沿著上下方向對向。上表面部642係以中心軸J1為中心之大致圓環板狀，且自側壁部641之上端部朝向徑向內側擴展。上表面部642係第2杯部164之頂蓋部。第2杯部164之外徑(即上表面部642之外徑)，較佳為第1杯部161之外徑以下。又，上表面部642之內徑較腔室蓋部122之外徑小。 The second cup portion 164 includes a side wall portion 641 and an upper surface portion 642. The side wall portion 641 has a substantially cylindrical shape centering on the central axis J1. The lower portion of the side wall portion 641 faces the upper surface portion 612 of the first cup portion 161 in the vertical direction. The upper surface portion 642 has a substantially annular plate shape centering on the central axis J1, and extends from the upper end portion of the side wall portion 641 toward the radially inner side. The upper surface portion 642 is a top cover portion of the second cup portion 164. The outer diameter of the second cup portion 164 (that is, the outer diameter of the upper surface portion 642) is preferably equal to or smaller than the outer diameter of the first cup portion 161. Further, the inner diameter of the upper surface portion 642 is smaller than the outer diameter of the chamber cover portion 122.
上表面部642之內周緣部(即第2杯部164之內周緣部)，位於自腔室蓋部122之下端部朝徑向外側突出之凸緣部125之上側。凸緣部125係腔室蓋部122之外周緣部。第2杯部164之上表面部642之內周緣部，與凸緣部125沿著上下方向重疊。在圖1所示之狀態中，上表面部642之內周緣部之下表面自上側與凸緣部125之上表面相接，而上表面部642之內周緣部係藉由作為腔室 蓋部122之外周緣部之凸緣部125所支撐。藉此，第2杯部164係由腔室蓋部122懸吊而被支撐。於圖1所示之狀態下，若腔室蓋部122藉由腔室開閉機構131而沿著上下方向被移動，第2杯部164亦會與腔室蓋部122一起相對於腔室本體121沿著上下方向相對地移動。 The inner peripheral edge portion of the upper surface portion 642 (that is, the inner peripheral edge portion of the second cup portion 164) is located above the flange portion 125 that protrudes outward in the radial direction from the lower end portion of the chamber cover portion 122. The flange portion 125 is an outer peripheral portion of the chamber cover portion 122. The inner peripheral edge portion of the upper surface portion 642 of the second cup portion 164 overlaps the flange portion 125 in the vertical direction. In the state shown in Fig. 1, the lower surface of the inner peripheral portion of the upper surface portion 642 is in contact with the upper surface of the flange portion 125 from the upper side, and the inner peripheral portion of the upper surface portion 642 is used as the chamber cover portion. 122 is supported by the flange portion 125 of the outer peripheral portion. Thereby, the second cup portion 164 is suspended by the chamber cover portion 122 and supported. In the state shown in FIG. 1, if the chamber cover portion 122 is moved in the up and down direction by the chamber opening and closing mechanism 131, the second cup portion 164 may also be opposed to the chamber body 121 together with the chamber cover portion 122. Move relatively in the up and down direction.
於腔室蓋部122之中央安裝有上部噴嘴181。上部噴嘴181係對向於基板9之上表面91之中央部而被固定於腔室蓋部122。上部噴嘴181係插入頂板123中央之開口。上部噴嘴181係於中央具有液吐出口而對基板9之上表面91供給處理液之處理液供給噴嘴。上部噴嘴181於液吐出口之周圍亦具有噴出氣體之噴出口。於腔室底部210之中央部211之中央，安裝有下部噴嘴182。下部噴嘴182於中央具有液吐出口，並與基板9之下表面92之中央部對向。 An upper nozzle 181 is attached to the center of the chamber cover 122. The upper nozzle 181 is fixed to the chamber cover portion 122 opposite to the central portion of the upper surface 91 of the substrate 9. The upper nozzle 181 is inserted into the opening in the center of the top plate 123. The upper nozzle 181 is a processing liquid supply nozzle that has a liquid discharge port at the center and supplies a processing liquid to the upper surface 91 of the substrate 9. The upper nozzle 181 also has a discharge port for ejecting gas around the liquid discharge port. At the center of the central portion 211 of the bottom portion 210 of the chamber, a lower nozzle 182 is mounted. The lower nozzle 182 has a liquid discharge port at the center and faces a central portion of the lower surface 92 of the substrate 9.
圖2係顯示基板處理裝置1所具備之氣液供給部18及氣液排出部19之方塊圖。除了前述之上部噴嘴181及下部噴嘴182外，氣液供給部18還具備有藥液供給部183、沖洗液供給部184、置換液供給部185、及惰性氣體供給部186。 FIG. 2 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 included in the substrate processing apparatus 1. In addition to the upper nozzle 181 and the lower nozzle 182, the gas-liquid supply unit 18 further includes a chemical supply unit 183, a rinse liquid supply unit 184, a replacement liquid supply unit 185, and an inert gas supply unit 186.
藥液供給部183、沖洗液供給部184及置換液供給部185，係分別經由閥而被連接於上部噴嘴181。上部噴嘴181係經由閥而亦被連接於惰性氣體供給部186。上部噴嘴181亦為對腔室12之內部供給氣體之氣體供給部之一部分。下部噴嘴182係經由閥而被連接於沖洗液供給部184。 The chemical solution supply unit 183, the rinse liquid supply unit 184, and the replacement liquid supply unit 185 are connected to the upper nozzle 181 via valves, respectively. The upper nozzle 181 is also connected to the inert gas supply unit 186 via a valve. The upper nozzle 181 is also a part of a gas supply portion that supplies gas to the inside of the chamber 12. The lower nozzle 182 is connected to the rinse liquid supply unit 184 via a valve.
被連接於液承接部16之液承接凹部165之排出路191，係連接於氣液分離部192。氣液分離部192係分別經由閥而被 連接於排氣部192a、排液部192b及液回收部192c。被連接於腔室12之腔室底部210之排出路193，係連接於氣液分離部194。氣液分離部194係分別經由閥而被連接於排氣部194a及排液部194b。被連接於第2杯部164之下端部之排出路195，係連接於氣液分離部196。氣液分離部196係分別經由閥而被連接於排氣部196a及排液部196b。氣液供給部18及氣液排出部19之各構成，係由控制部10所控制。腔室開閉機構131、基板旋轉機構15及杯部移動機構162(參照圖1)，亦由控制部10所控制。 The discharge path 191 connected to the liquid receiving recess 165 of the liquid receiving portion 16 is connected to the gas-liquid separating portion 192. The gas-liquid separation unit 192 is connected to the exhaust unit 192a, the liquid discharge unit 192b, and the liquid recovery unit 192c via valves, respectively. The discharge path 193 connected to the bottom portion 210 of the chamber 12 is connected to the gas-liquid separation portion 194. The gas-liquid separation unit 194 is connected to the exhaust unit 194a and the liquid discharge unit 194b via valves, respectively. The discharge path 195 connected to the lower end portion of the second cup portion 164 is connected to the gas-liquid separation portion 196. The gas-liquid separation unit 196 is connected to the exhaust unit 196a and the liquid discharge unit 196b via valves, respectively. The respective configurations of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 are controlled by the control unit 10. The chamber opening and closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 (see FIG. 1) are also controlled by the control unit 10.
自藥液供給部183經由上部噴嘴181而被供給至基板9之藥液，例如為利用化學反應對基板進行處理之處理液。該藥液例如為氫氟酸或四甲基氫氧化銨(TMAH)水溶液等蝕刻液。沖洗液供給部184經由上部噴嘴181或下部噴嘴182而基板9供給沖洗液。該沖洗液例如為純水(DIW；deionized water)。置換液供給部185經由上部噴嘴181而基板9上供給置換液。如後所述，置換液係與基板9上之沖洗液置換。該置換液例如為異丙醇(IPA)。藥液供給部183、沖洗液供給部184及置換液供給部185係對基板9供給處理液(即前述之藥液、沖洗液或置換液)之處理液供給部180。基板處理裝置1亦可設置有供給前述之處理液以外之處理液的處理液供給部。 The chemical liquid supplied from the chemical solution supply unit 183 to the substrate 9 via the upper nozzle 181 is, for example, a processing liquid for treating the substrate by a chemical reaction. The chemical solution is, for example, an etching solution such as hydrofluoric acid or a tetramethylammonium hydroxide (TMAH) aqueous solution. The rinse liquid supply unit 184 supplies the rinse liquid to the substrate 9 via the upper nozzle 181 or the lower nozzle 182. The rinsing liquid is, for example, pure water (DIW; deionized water). The replacement liquid supply unit 185 supplies the replacement liquid to the substrate 9 via the upper nozzle 181. The replacement liquid system is replaced with the rinse liquid on the substrate 9 as will be described later. This replacement liquid is, for example, isopropyl alcohol (IPA). The chemical solution supply unit 183, the rinse liquid supply unit 184, and the replacement liquid supply unit 185 supply the treatment liquid supply unit 180 to the substrate 9 with the treatment liquid (that is, the aforementioned chemical liquid, rinse liquid, or replacement liquid). The substrate processing apparatus 1 may be provided with a processing liquid supply unit that supplies a processing liquid other than the processing liquid described above.
惰性氣體供給部186經由上部噴嘴181將惰性氣體供給至腔室12內。自惰性氣體供給部186所供給之惰性氣體，例如為氮氣(N2)。該惰性氣體亦可為氮氣以外之氣體。 The inert gas supply unit 186 supplies the inert gas into the chamber 12 via the upper nozzle 181. The inert gas supplied from the inert gas supply unit 186 is, for example, nitrogen gas (N 2 ). The inert gas may also be a gas other than nitrogen.
圖3係顯示基板處理裝置1之基板9之處理流程之圖。基板處理裝置1如圖1所示，在腔室蓋部122自腔室本體121 離開而位於上方且第1杯部161自腔室蓋部122離開而位於下方之狀態下，基板9藉由外部之搬送機構被搬入至腔室12內，而由基板支撐部141自下側所支撐(步驟S11)。在步驟S11中，第2杯部164係由腔室蓋部122懸吊而被支撐，且朝上方離開第1杯部161。 FIG. 3 is a view showing a processing flow of the substrate 9 of the substrate processing apparatus 1. As shown in FIG. 1 , in the substrate processing apparatus 1 , the substrate 9 is separated from the chamber body 121 and positioned above, and the first cup portion 161 is separated from the chamber cover portion 122 to be positioned below, and the substrate 9 is externally The conveyance mechanism is carried into the chamber 12, and is supported by the substrate support portion 141 from the lower side (step S11). In step S11, the second cup portion 164 is suspended by the chamber lid portion 122 and is separated from the first cup portion 161 upward.
以下，將圖1所示之腔室12、第1杯部161及第2杯部164之狀態稱為「開啟狀態」。腔室蓋部122與腔室側壁部214之間之開口係以中心軸J1為中心之環狀，以下稱為「環狀開口81」。基板處理裝置1藉由腔室蓋部122自腔室本體121離開，而於基板9之周圍(即徑向外側)形成有環狀開口81。在步驟S11中，基板9係經由環狀開口81而被搬入腔室12內。 Hereinafter, the state of the chamber 12, the first cup portion 161, and the second cup portion 164 shown in FIG. 1 will be referred to as an "open state". The opening between the chamber cover portion 122 and the chamber side wall portion 214 is annularly centered on the central axis J1, and is hereinafter referred to as "annular opening 81". The substrate processing apparatus 1 is separated from the chamber body 121 by the chamber cover portion 122, and an annular opening 81 is formed around the substrate 9 (i.e., radially outward). In step S11, the substrate 9 is carried into the chamber 12 via the annular opening 81.
若基板9被搬入，腔室蓋部122便藉由腔室開閉機構131而與頂板123一起下降。腔室蓋部122自圖1所示之位置移動至圖4所示之位置，基板按壓部142之複數個第2接觸部421便接觸於基板9之外周緣部。 When the substrate 9 is carried in, the chamber cover portion 122 is lowered together with the top plate 123 by the chamber opening and closing mechanism 131. The chamber cover portion 122 is moved from the position shown in FIG. 1 to the position shown in FIG. 4, and the plurality of second contact portions 421 of the substrate pressing portion 142 are in contact with the outer peripheral edge portion of the substrate 9.
於頂板123之下表面及基板支撐部141之支撐部基座413上，設置有沿著上下方向對向之複數對磁鐵(省略圖示)。以下，將各對磁鐵亦稱為「磁鐵對」。在基板處理裝置1中，複數個磁鐵對係於圓周方向上以等角度間隔被配置於與第1接觸部411、第2接觸部421、第1卡合部241及第2卡合部242不同的位置。在基板按壓部142與基板9接觸之狀態下，藉由作用於磁鐵對之間之磁力(引力)，而對頂板123作用向下之力。藉此，基板按壓部142將基板9朝向基板支撐部141推壓。 On the lower surface of the top plate 123 and the support base 413 of the substrate supporting portion 141, a plurality of pairs of magnets (not shown) that face in the vertical direction are provided. Hereinafter, each pair of magnets is also referred to as a "magnet pair." In the substrate processing apparatus 1, a plurality of magnet pairs are disposed at equal angular intervals in the circumferential direction, and are different from the first contact portion 411, the second contact portion 421, the first engagement portion 241, and the second engagement portion 242. s position. In a state where the substrate pressing portion 142 is in contact with the substrate 9, a downward force is applied to the top plate 123 by a magnetic force (gravitational force) acting between the pair of magnets. Thereby, the substrate pressing portion 142 presses the substrate 9 toward the substrate supporting portion 141.
在基板處理裝置1中，基板按壓部142藉由頂板123之本身重量及磁石對之磁力，將基板9朝向基板支撐部141推壓， 藉此，可以基板按壓部142與基板支撐部141將基板自上下夾持9而穩固地加以保持。 In the substrate processing apparatus 1, the substrate pressing portion 142 presses the substrate 9 toward the substrate supporting portion 141 by the weight of the top plate 123 and the magnetic force of the magnet pair, whereby the substrate pressing portion 142 and the substrate supporting portion 141 can plate the substrate. It is firmly held by the upper and lower clamps 9.
圖4所示之狀態，被保持部237之凸緣部239朝板保持部222之凸緣部224之上方離開，板保持部222與被保持部237並未接觸。換言之，藉由板保持部222所進行頂板123之保持被解除。因此，頂板123自腔室蓋部122獨立，而可與基板保持部14及被保持於基板保持部14之基板9，一起藉由基板旋轉機構15進行旋轉。 In the state shown in FIG. 4, the flange portion 239 of the holding portion 237 is separated from the upper portion of the flange portion 224 of the plate holding portion 222, and the plate holding portion 222 is not in contact with the held portion 237. In other words, the holding of the top plate 123 by the plate holding portion 222 is released. Therefore, the top plate 123 is independent of the chamber cover portion 122, and can be rotated by the substrate rotating mechanism 15 together with the substrate holding portion 14 and the substrate 9 held by the substrate holding portion 14.
又，圖4所示之狀態，於第1卡合部241之下部之凹部嵌合有第2卡合部242。藉此，頂板123於以中心軸J1為中心之圓周方向上與基板支撐部141之支撐部基座413卡合。換言之，第1卡合部241及第2卡合部242係限制頂板123相對於基板支撐部141之旋轉方向上的相對位置(即固定圓周方向上之相對位置)之位置限制構件。於腔室蓋部122下降時，以第1卡合部241與第2卡合部242相嵌合之方式，藉由基板旋轉機構15來控制支撐部基座413之圓周方向之位置。 Moreover, in the state shown in FIG. 4, the 2nd engagement part 242 is fitted in the recessed part of the lower part of the 1st engagement part 241. Thereby, the top plate 123 is engaged with the support base 413 of the substrate supporting portion 141 in the circumferential direction around the central axis J1. In other words, the first engaging portion 241 and the second engaging portion 242 are position restricting members that restrict the relative position of the top plate 123 in the rotational direction of the substrate supporting portion 141 (that is, the relative position in the fixed circumferential direction). When the chamber cover portion 122 is lowered, the position of the support portion base 413 in the circumferential direction is controlled by the substrate rotation mechanism 15 so that the first engagement portion 241 and the second engagement portion 242 are fitted.
若腔室蓋部122之下降結束，第1杯部161便藉由控制部10(參照圖2)控制杯部移動機構162而上升。第1杯部161於上升中與第2杯部164接觸。具體而言，第1杯部161之上表面部612之上表面，與第2杯部164之側壁部641之下端部接觸。第2杯部164之側壁部641之下端部，遍及全周地與被設置於第1杯部161之上表面部612之上表面之圓環狀之唇形密封(lip seal)613接觸。藉此，第2杯部164與第1杯部161之接觸部被密封，而防止氣體及液體之通過。換言之，唇形密封613係於第1杯部161被設 置在與第2杯部164接觸之位置且於與第2杯部164之間遍及全周地形成密封之杯密封部。 When the lowering of the chamber cover portion 122 is completed, the first cup portion 161 is controlled by the control portion 10 (see FIG. 2) to control the cup portion moving mechanism 162. The first cup portion 161 is in contact with the second cup portion 164 during ascending. Specifically, the upper surface of the upper surface portion 612 of the first cup portion 161 is in contact with the lower end portion of the side wall portion 641 of the second cup portion 164. The lower end portion of the side wall portion 641 of the second cup portion 164 is in contact with the annular lip seal 613 provided on the upper surface of the upper surface portion 612 of the first cup portion 161 over the entire circumference. Thereby, the contact portion between the second cup portion 164 and the first cup portion 161 is sealed to prevent the passage of gas and liquid. In other words, the lip seal 613 is a cup seal portion in which the first cup portion 161 is provided at a position in contact with the second cup portion 164 and is formed over the entire circumference between the second cup portion 164 and the second cup portion 164.
第1杯部161於接觸第2杯部164之後仍持續上升，自圖1所示之位置移動至圖4所示之位置。圖4所示之狀態，第2杯部164係自腔室蓋部122之凸緣部125朝向上方離開，並由第1杯部161自下側所支撐。第2杯部164之上表面部642之內周緣部，於腔室蓋部122之凸緣部125之上方，位於自凸緣部125離開之位置。第1杯部161之該上升，亦可與腔室蓋部122之下降同步地進行、或於腔室蓋部122之下降前進行。 The first cup portion 161 continues to rise after contacting the second cup portion 164, and moves from the position shown in FIG. 1 to the position shown in FIG. In the state shown in FIG. 4, the second cup portion 164 is separated upward from the flange portion 125 of the chamber cover portion 122, and is supported by the first cup portion 161 from the lower side. The inner peripheral edge portion of the upper surface portion 642 of the second cup portion 164 is located above the flange portion 125 of the chamber cover portion 122 at a position away from the flange portion 125. This rise of the first cup portion 161 may be performed in synchronization with the lowering of the chamber cover portion 122 or before the chamber cover portion 122 is lowered.
又，圖4所示之狀態，第1杯部161遍及全周地位於環狀開口81之徑向外側。第1杯部161之側壁部611，與環狀開口81沿著徑向對向。第1杯部161之上表面部612之內周緣部之上表面，遍及全周地與被設置於腔室蓋部122之凸緣部125之下表面之圓環狀之唇形密封252接觸。藉此，第1杯部161與腔室蓋部122之接觸部被密封，而防止氣體及液體之通過。 Further, in the state shown in FIG. 4, the first cup portion 161 is located radially outward of the annular opening 81 over the entire circumference. The side wall portion 611 of the first cup portion 161 faces the annular opening 81 in the radial direction. The upper surface of the inner peripheral edge portion of the upper surface portion 612 of the first cup portion 161 is in contact with the annular lip seal 252 provided on the lower surface of the flange portion 125 of the chamber cover portion 122 over the entire circumference. Thereby, the contact portion between the first cup portion 161 and the chamber cover portion 122 is sealed to prevent the passage of gas and liquid.
在以下之說明中，將圖4所示之第1杯部161及第2杯部164各自之位置稱為「第1位置」。如圖4所示，在基板處理裝置1中，位於第1位置之第1杯部161之上表面部612接觸於腔室蓋部122，而第1杯部161之伸縮管617經由杯對向部163而間接地接觸於腔室本體121。如此，在形成有環狀開口81之狀態下，藉由位於第1位置之第1杯部161接觸於腔室蓋部122及腔室本體121，而形成包含腔室本體121、腔室蓋部122及第1杯部161之第1外部密閉構造(步驟S12)。 In the following description, the position of each of the first cup portion 161 and the second cup portion 164 shown in FIG. 4 is referred to as a "first position". As shown in FIG. 4, in the substrate processing apparatus 1, the upper surface portion 612 of the first cup portion 161 located at the first position is in contact with the chamber lid portion 122, and the telescopic tube 617 of the first cup portion 161 is opposed via the cup. The portion 163 is in indirect contact with the chamber body 121. In this manner, in a state in which the annular opening 81 is formed, the first cup portion 161 located at the first position contacts the chamber cover portion 122 and the chamber body 121, thereby forming the chamber body 121 and the chamber cover portion. 122 and the first outer sealed structure of the first cup portion 161 (step S12).
在以下之說明中，將第1外部密閉構造之內部空間(即 由腔室本體121、腔室蓋部122、第1杯部161及杯對向部163所包圍之密閉之內部空間)，稱為「第1擴大密閉空間100」。第1擴大密閉空間100係藉由腔室蓋部122與腔室本體121之間之腔室空間120、及由第1杯部161與杯對向部163所包圍之第1側方空間160經由環狀開口81連通而形成之1個空間。又，將基板處理裝置1中形成有第1擴大密閉空間100之狀態，稱為「第1外部密閉狀態」。 In the following description, the internal space of the first outer sealed structure (that is, the sealed inner space surrounded by the chamber body 121, the chamber cover portion 122, the first cup portion 161, and the cup opposing portion 163) is called It is "the first enlarged confined space 100". The first enlarged sealed space 100 is passed through the chamber space 120 between the chamber lid portion 122 and the chamber body 121, and the first side space 160 surrounded by the first cup portion 161 and the cup opposing portion 163. One space formed by the annular opening 81 communicating. In addition, the state in which the first enlarged sealed space 100 is formed in the substrate processing apparatus 1 is referred to as a "first external sealed state".
若第1擴大密閉空間100形成，基板9之旋轉便由基板旋轉機構15以一定之旋轉數開始進行。又，與自惰性氣體供給部186(參照圖2)朝向第1擴大密閉空間100之惰性氣體(例如，氮氣)的供給開始一起地，開始排氣部192a(參照圖2)所進行第1擴大密閉空間100內之氣體之排出。藉此，於經過既定時間後，第1擴大密閉空間100便成為充填有惰性氣體之惰性氣體充填狀態(即氧濃度低之低氧環境)。再者，朝向第1擴大密閉空間100之惰性氣體之供給及第1擴大密閉空間100內之氣體之排出，亦可自圖1所示之開啟狀態起進行。 When the first enlarged sealed space 100 is formed, the rotation of the substrate 9 is started by the substrate rotating mechanism 15 at a constant number of rotations. In addition, the first expansion of the exhaust unit 192a (see FIG. 2) is started together with the supply of the inert gas (for example, nitrogen gas) from the inert gas supply unit 186 (see FIG. 2) toward the first enlarged sealed space 100. The discharge of gas in the confined space 100. Thereby, after a predetermined period of time elapses, the first enlarged sealed space 100 is filled with an inert gas filled with an inert gas (that is, a low oxygen atmosphere having a low oxygen concentration). Further, the supply of the inert gas to the first enlarged sealed space 100 and the discharge of the gas in the first enlarged sealed space 100 may be performed from the open state shown in FIG.
接著，於第1外部密閉構造內，朝向旋轉中之基板9之上表面91之中央部，開始自上部噴嘴181進行作為第1處理液之藥液(例如，蝕刻液)的供給。來自上部噴嘴181之藥液，係連續地被供給至旋轉之基板9之上表面91。上表面91上之藥液係藉由基板9之旋轉而朝向基板9之外周部擴展，使上表面91整體由藥液所覆蓋。 Then, in the first outer sealed structure, the supply of the chemical liquid (for example, an etching liquid) as the first processing liquid from the upper nozzle 181 is started toward the central portion of the upper surface 91 of the substrate 9 that is being rotated. The chemical liquid from the upper nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9. The chemical liquid on the upper surface 91 is expanded toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, so that the entire upper surface 91 is covered with the chemical liquid.
到達基板9之上表面91之外周緣之藥液，藉由離心力而自該外周緣朝向徑向外側飛濺。在第1擴大密閉空間100中， 自旋轉之基板9之上表面91飛濺之藥液，係經由環狀開口81而由第1杯部161所承接，並被導往液承接凹部165。被導往液承接凹部165之藥液，經由圖2所示之排出路191而流入氣液分離部192。然後，藉由液回收部192c藥液自氣液分離部192被回收，並經由過濾器等將雜質等自藥液去除後加以再利用。 The chemical solution reaching the outer periphery of the upper surface 91 of the substrate 9 is splashed from the outer peripheral edge toward the radially outer side by centrifugal force. In the first enlarged sealed space 100, the chemical liquid splashed from the upper surface 91 of the rotating substrate 9 is received by the first cup portion 161 via the annular opening 81, and is guided to the liquid receiving concave portion 165. The chemical liquid guided to the liquid receiving recess 165 flows into the gas-liquid separating portion 192 via the discharge path 191 shown in FIG. 2 . Then, the liquid recovery unit 192c recovers the chemical liquid from the gas-liquid separation unit 192, and removes impurities and the like from the chemical liquid through a filter or the like and reuses the liquid.
基板處理裝置1，於第1外部密閉構造內，藉由藥液自上部噴嘴181持續地被供給至旋轉中之基板9之上表面91，而進行對基板9之藥液處理(例如蝕刻處理)(步驟S13)。由於頂板123之下表面接近於基板9之上表面91，因此對基板9之藥液處理係於頂板123之下表面與基板9之上表面91間之極為狹窄的空間進行。若從來自上部噴嘴181之藥液之供給開始起經過既定時間，便停止自上部噴嘴181之藥液之供給。然後，藉由基板旋轉機構15，僅在較短之既定時間內增大基板9之旋轉數，使藥液自基板9上被去除。 In the first external sealing structure, the substrate processing apparatus 1 is continuously supplied to the upper surface 91 of the rotating substrate 9 from the upper nozzle 181 by the chemical liquid, thereby performing chemical treatment (for example, etching treatment) on the substrate 9. (Step S13). Since the lower surface of the top plate 123 is close to the upper surface 91 of the substrate 9, the chemical treatment of the substrate 9 is performed in a very narrow space between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9. When a predetermined time elapses from the start of the supply of the chemical liquid from the upper nozzle 181, the supply of the chemical liquid from the upper nozzle 181 is stopped. Then, by the substrate rotating mechanism 15, the number of rotations of the substrate 9 is increased only for a short period of time, and the chemical liquid is removed from the substrate 9.
若藥液處理結束，腔室蓋部122、第1杯部161及第2杯部164便藉由腔室開閉機構131及杯部移動機構162，而自圖4所示之位置同步地下降。然後，如圖5所示，藉由腔室蓋部122之下端部與腔室側壁部214之上端部接觸使腔室本體121之上部開口被封閉，而形成包含腔室本體121及腔室蓋部122之腔室密閉構造(步驟S14)。 When the chemical liquid processing is completed, the chamber lid portion 122, the first cup portion 161, and the second cup portion 164 are simultaneously lowered from the position shown in FIG. 4 by the chamber opening and closing mechanism 131 and the cup portion moving mechanism 162. Then, as shown in FIG. 5, the upper end of the chamber body portion 121 is closed by the lower end portion of the chamber cover portion 122, and the upper portion of the chamber body 121 is closed to form the chamber body 121 and the chamber cover. The chamber of the portion 122 is hermetically sealed (step S14).
在步驟S14中，腔室蓋部122與腔室本體121間之環狀開口81(參照圖4)被封閉，使腔室空間120以與第1側方空間160隔絕之狀態被密封。在以下之說明中，將環狀開口81被封閉且腔室空間120被密封之基板處理裝置1之狀態稱為「腔室密閉狀態」。在腔室密閉狀態中，被設置於腔室蓋部122之下端部之圓環狀之唇 形密封231，遍及全周地接觸於腔室側壁部214之上端部。藉此，腔室蓋部122與腔室本體121之接觸部被密封，而防止氣體及液體之通過。又，腔室密閉狀態，基板9與腔室12之內壁直接對向，且於該等之間不存在其他之液承接部。 In step S14, the annular opening 81 (see FIG. 4) between the chamber cover portion 122 and the chamber body 121 is closed, and the chamber space 120 is sealed in a state of being isolated from the first lateral space 160. In the following description, the state of the substrate processing apparatus 1 in which the annular opening 81 is closed and the chamber space 120 is sealed is referred to as a "chamber sealed state". In the closed state of the chamber, the annular lip seal 231 provided at the lower end portion of the chamber cover portion 122 is in contact with the upper end portion of the chamber side wall portion 214 over the entire circumference. Thereby, the contact portion of the chamber cover portion 122 with the chamber body 121 is sealed to prevent the passage of gas and liquid. Further, in the sealed state of the chamber, the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving portion between the chambers.
圖5所示之狀態，第1杯部161接近於杯對向部163，而第1杯部161之側壁部611之下部位於杯對向部163之液承接凹部165內。又，即便如圖5所示，於腔室蓋部122封閉腔室本體121之上部開口之狀態下，第2杯部164亦與圖4所示之狀態同樣地，藉由第1杯部161自下側所支撐。第2杯部164之上表面部642之內周緣部，位於朝上方離開腔室蓋部122之凸緣部125之位置。 In the state shown in FIG. 5, the first cup portion 161 is close to the cup opposing portion 163, and the lower portion of the side wall portion 611 of the first cup portion 161 is located in the liquid receiving recessed portion 165 of the cup opposing portion 163. Further, as shown in FIG. 5, in a state where the chamber cover portion 122 closes the upper portion of the chamber body 121, the second cup portion 164 is also the first cup portion 161 as in the state shown in FIG. Supported by the lower side. The inner peripheral edge portion of the upper surface portion 642 of the second cup portion 164 is located at a position away from the flange portion 125 of the chamber cover portion 122 upward.
在以下之說明中，將圖5所示之第1杯部161及第2杯部164各自之位置稱為「第2位置」。杯部移動機構162係使第1杯部161及第2杯部164在環狀開口81(參照圖4)之徑向外側之第1位置與較第1位置更下方之第2位置間沿著上下方向移動之機構。第1杯部161即便於圖1所示之基板處理裝置1之開啟狀態下仍被配置於第2位置，而自基板9之搬入路徑退避。亦即，第1杯部161之第2位置，有時亦為基板9之搬入時等進行退避之退避位置。 In the following description, the position of each of the first cup portion 161 and the second cup portion 164 shown in FIG. 5 is referred to as a "second position". The cup moving mechanism 162 causes the first cup portion 161 and the second cup portion 164 to be along the first position radially outward of the annular opening 81 (see FIG. 4) and the second position lower than the first position. The mechanism that moves up and down. The first cup portion 161 is disposed at the second position even when the substrate processing apparatus 1 shown in FIG. 1 is opened, and is retracted from the loading path of the substrate 9. In other words, the second position of the first cup portion 161 may be a retracted position at which the substrate 9 is retracted.
即便於腔室密閉狀態下，仍與第1外部密閉狀態同樣地，藉由基板按壓部142將基板9朝向基板支撐部141推壓，而以基板按壓部142與基板支撐部141將基板9自上下夾持而穩固地加以保持。又，由板保持部222所進行頂板123之保持被解除，頂板123自腔室蓋部122獨立而與基板保持部14及基板9一起旋轉。 In other words, in the sealed state of the chamber, the substrate 9 is pressed toward the substrate supporting portion 141 by the substrate pressing portion 142, and the substrate pressing portion 142 and the substrate supporting portion 141 are used to press the substrate 9 from the substrate supporting portion 141. Hold it up and down and hold it firmly. Further, the holding of the top plate 123 by the plate holding portion 222 is released, and the top plate 123 rotates together with the substrate holding portion 14 and the substrate 9 independently of the chamber cover portion 122.
若腔室空間120被密閉，由排氣部192a(參照圖2)所 進行氣體之排出便停止，並且開始由排氣部194a所進行腔室空間120內之氣體之排出。接著，於腔室密閉構造內，開始由沖洗液供給部184(參照圖2)對旋轉中之基板9進行作為第2處理液之沖洗液(例如，純水)的供給。 When the chamber space 120 is sealed, the discharge of the gas by the exhaust portion 192a (see Fig. 2) is stopped, and the discharge of the gas in the chamber space 120 by the exhaust portion 194a is started. Then, in the chamber sealing structure, supply of the rinsing liquid (for example, pure water) as the second processing liquid to the rotating substrate 9 is started by the rinsing liquid supply unit 184 (see FIG. 2).
來自沖洗液供給部184之沖洗液，自上部噴嘴181及下部噴嘴182被吐出而連續地被供給至基板9之上表面91及下表面92之中央部。沖洗液藉由基板9之旋轉朝向上表面91及下表面92之外周部擴展，並自基板9之外周緣朝向徑向外側飛濺。自基板9飛濺之沖洗液係由腔室12之內壁(亦即，腔室蓋部122及腔室側壁部214之內壁)所承接，並經由圖2所示之排出路193、氣液分離部194及排液部194b而被廢棄。 The rinse liquid from the rinse liquid supply unit 184 is discharged from the upper nozzle 181 and the lower nozzle 182, and is continuously supplied to the central portion of the upper surface 91 and the lower surface 92 of the substrate 9. The rinsing liquid spreads toward the outer peripheral portion of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9, and splashes radially outward from the outer periphery of the substrate 9. The rinsing liquid splashed from the substrate 9 is received by the inner wall of the chamber 12 (i.e., the inner wall of the chamber cover portion 122 and the chamber side wall portion 214), and is discharged through the discharge path 193 shown in Fig. 2, gas-liquid The separation unit 194 and the liquid discharge unit 194b are discarded.
基板處理裝置1，於腔室密閉構造內，藉由沖洗液自上部噴嘴181及下部噴嘴182持續地被供給至旋轉中之基板9之上表面91及下表面92，而進行對基板9之沖洗處理(步驟S15)。在步驟S15中，藉由腔室12承接自基板9飛濺之沖洗液，腔室12內部之實質的洗淨處理與基板9之沖洗處理一併地進行。若自沖洗液之供給開始經過既定時間，來自沖洗液供給部184之沖洗液之供給便停止。 The substrate processing apparatus 1 is continuously supplied to the upper surface 91 and the lower surface 92 of the rotating substrate 9 by the rinsing liquid from the upper nozzle 181 and the lower nozzle 182 in the chamber sealing structure, thereby performing rinsing of the substrate 9. Processing (step S15). In step S15, the rinsing liquid splashed from the substrate 9 is received by the chamber 12, and the substantial cleaning process inside the chamber 12 is performed together with the rinsing process of the substrate 9. When the supply of the rinse liquid starts to elapse after a predetermined time, the supply of the rinse liquid from the rinse liquid supply unit 184 is stopped.
若沖洗處理結束，腔室蓋部122便藉由腔室開閉機構131自圖5所示之位置上升，藉此如圖6所示，腔室蓋部122朝上方離開腔室本體121而形成環狀開口81。然後，腔室蓋部122之凸緣部125之上表面，接觸於第2杯部164之上表面部642之內周緣部之下表面。第2杯部164之上表面部642之內周緣部，遍及全周地接觸於被設置在腔室蓋部122之凸緣部125之上表面之圓環狀之 唇形密封251。藉此，第2杯部164與腔室蓋部122之接觸部被密封，而防止氣體及液體之通過。又，如前所述，第2杯部164之側壁部641之下端部，遍及全周地接觸於被設置在位在第2位置之第1杯部161之上表面部612之上表面之圓環狀之唇形密封613。藉此，第2杯部164與第1杯部161之接觸部被密封，而防止氣體及液體之通過。 When the rinsing process is completed, the chamber cover portion 122 is raised from the position shown in FIG. 5 by the chamber opening and closing mechanism 131, whereby the chamber cover portion 122 is separated upward from the chamber body 121 to form a ring as shown in FIG. Shaped opening 81. Then, the upper surface of the flange portion 125 of the chamber cover portion 122 is in contact with the lower surface of the inner peripheral portion of the upper surface portion 642 of the second cup portion 164. The inner peripheral edge portion of the upper surface portion 642 of the second cup portion 164 is in contact with the annular lip seal 251 provided on the upper surface of the flange portion 125 of the chamber cover portion 122 over the entire circumference. Thereby, the contact portion between the second cup portion 164 and the chamber cover portion 122 is sealed to prevent the passage of gas and liquid. Further, as described above, the lower end portion of the side wall portion 641 of the second cup portion 164 is in contact with the circle of the upper surface of the upper surface portion 612 of the first cup portion 161 which is disposed at the second position over the entire circumference. An annular lip seal 613. Thereby, the contact portion between the second cup portion 164 and the first cup portion 161 is sealed to prevent the passage of gas and liquid.
如此，在圖6所示之基板處理裝置1中，於形成有環狀開口81之狀態下，位於第2位置之第2杯部164接觸於腔室蓋部122及位於第2位置之第1杯部161。藉此，形成包含腔室蓋部122、腔室本體121、第1杯部161及第2杯部164之第2外部密閉構造(步驟S16)。圖6所示之狀態，第2杯部164遍及全周地位於環狀開口81之徑向外側。 As described above, in the substrate processing apparatus 1 shown in FIG. 6, in the state in which the annular opening 81 is formed, the second cup portion 164 located at the second position is in contact with the chamber cover portion 122 and the first position at the second position. Cup portion 161. Thereby, the second outer sealed structure including the chamber cover portion 122, the chamber body 121, the first cup portion 161, and the second cup portion 164 is formed (step S16). In the state shown in FIG. 6, the second cup portion 164 is located radially outward of the annular opening 81 over the entire circumference.
在以下之說明中，將第2外部密閉構造之內部空間(即由腔室本體121、腔室蓋部122、第1杯部161及第2杯部164所包圍被密閉之內部空間)稱為「第2擴大密閉空間110」。第2擴大密閉空間110係藉由使腔室蓋部122與腔室本體121間之腔室空間120、及由第2杯部164與第1杯部161之上表面部612所包圍之第2側方空間169經由環狀開口81加以連通而形成的1個空間。又，將基板處理裝置1中形成有第2擴大密閉空間110之狀態稱為「第2外部密閉狀態」。 In the following description, the internal space of the second outer sealed structure (that is, the sealed inner space surrounded by the chamber body 121, the chamber cover portion 122, the first cup portion 161, and the second cup portion 164) is called "Second enlarged confined space 110". The second enlarged sealed space 110 is formed by the chamber space 120 between the chamber cover portion 122 and the chamber body 121, and the second portion surrounded by the second cup portion 164 and the upper surface portion 612 of the first cup portion 161. One space formed by the side space 169 communicating via the annular opening 81. In addition, the state in which the second enlarged sealed space 110 is formed in the substrate processing apparatus 1 is referred to as a "second external sealed state".
若第2擴大密閉空間110形成，由排氣部194a(參照圖2)所進行氣體之排出便停止，並且開始由排氣部196a所進行第2擴大密閉空間110內之氣體之排出。接著，於第2外部密閉構造內，朝向旋轉中之基板9之上表面91之中央部，開始自上部噴嘴181 進行作為第3處理液之置換液(例如IPA)的供給。來自上部噴嘴181之置換液，係連續地供給至旋轉之基板9之上表面91，並藉由基板9之旋轉而朝向基板9之外周部擴展。藉此，殘留於基板9之上表面91上之沖洗液由置換液所置換，使基板9之上表面91整體由置換液所覆蓋。 When the second enlarged sealed space 110 is formed, the discharge of the gas by the exhaust unit 194a (see FIG. 2) is stopped, and the discharge of the gas in the second enlarged sealed space 110 by the exhaust unit 196a is started. Then, in the second outer sealed structure, the supply of the replacement liquid (for example, IPA) as the third processing liquid is started from the upper nozzle 181 toward the central portion of the upper surface 91 of the substrate 9 that is rotating. The replacement liquid from the upper nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9, and is expanded toward the outer peripheral portion of the substrate 9 by the rotation of the substrate 9. Thereby, the rinse liquid remaining on the upper surface 91 of the substrate 9 is replaced by the replacement liquid, so that the entire upper surface 91 of the substrate 9 is covered with the replacement liquid.
到達基板9之上表面91之外周緣之沖洗液及置換液，藉由離心力而自該外周緣朝向徑向外側飛濺。在第2擴大密閉空間110中，自旋轉之基板9之上表面91飛濺之沖洗液及置換液，經由環狀開口81而由第2杯部164所承接。由第2杯部164所承接之沖洗液及置換液，經由圖2所示之排出路195、氣液分離部196及排液部196b而被廢棄。 The rinse liquid and the replacement liquid that have reached the outer periphery of the upper surface 91 of the substrate 9 are splashed from the outer peripheral edge toward the radially outer side by centrifugal force. In the second enlarged sealed space 110, the rinse liquid and the replacement liquid splashed from the upper surface 91 of the rotating substrate 9 are received by the second cup portion 164 via the annular opening 81. The rinse liquid and the replacement liquid received by the second cup portion 164 are discarded through the discharge passage 195, the gas-liquid separation portion 196, and the liquid discharge portion 196b shown in Fig. 2 .
基板處理裝置1，於第2外部密閉構造內，置換液藉由自上部噴嘴181持續地被供給至旋轉中之基板9之上表面91，而進行對基板9之置換處理(步驟S17)。若自置換液之供給開始經過既定時間，自置換液供給部185之置換液之供給便停止。若置換處理結束，便藉由基板旋轉機構15增大基板9之旋轉數，而利用離心力使置換液自基板9被去除。自基板9上飛濺之置換液係由第2杯部164所承接。 In the substrate processing apparatus 1, in the second external sealing structure, the replacement liquid is continuously supplied from the upper nozzle 181 to the upper surface 91 of the rotating substrate 9, and the replacement processing of the substrate 9 is performed (step S17). When the supply of the replacement liquid has started for a predetermined period of time, the supply of the replacement liquid from the replacement liquid supply unit 185 is stopped. When the replacement process is completed, the number of rotations of the substrate 9 is increased by the substrate rotating mechanism 15, and the replacement liquid is removed from the substrate 9 by centrifugal force. The replacement liquid splashed from the substrate 9 is received by the second cup portion 164.
接著，藉由腔室開閉機構131，使腔室蓋部122自圖6所示之位置朝向圖5所示之位置下降。藉此，環狀開口81(參照圖6)被封閉，而形成腔室密閉構造(步驟S18)。若腔室空間120被密閉，排氣部196a(參照圖2)所進行氣體之排出便停止，並且開始排氣部194a所進行腔室空間120內之氣體之排出。然後，於腔室密閉構造內，基板9之旋轉數進一步增大，而進行基板9之乾燥處 理(步驟S19)。若自基板9之乾燥開始經過既定時間，基板9之旋轉便停止。基板9之乾燥處理亦可藉由排氣部194a使腔室空間120減壓，而在較大氣壓更低之減壓環境下進行。 Next, the chamber opening and closing mechanism 131 lowers the chamber lid portion 122 from the position shown in FIG. 6 toward the position shown in FIG. Thereby, the annular opening 81 (refer to FIG. 6) is closed, and the chamber sealing structure is formed (step S18). When the chamber space 120 is sealed, the discharge of the gas by the exhaust portion 196a (see FIG. 2) is stopped, and the discharge of the gas in the chamber space 120 by the exhaust portion 194a is started. Then, in the chamber sealing structure, the number of rotations of the substrate 9 is further increased, and the drying process of the substrate 9 is performed (step S19). When the predetermined time elapses from the drying of the substrate 9, the rotation of the substrate 9 is stopped. The drying process of the substrate 9 can also be performed by depressurizing the chamber space 120 by the exhaust portion 194a, and under a reduced pressure environment having a lower atmospheric pressure.
其後，腔室蓋部122藉由腔室開閉機構131而離開腔室本體121，並自圖5所示之位置朝向圖1所示之位置上升。換言之，腔室蓋部122朝離開腔室本體121之方向，而對腔室本體121相對地移動。此時，頂板123係由腔室蓋部122之板保持部222所保持，而與腔室蓋部122一起上升。又，第2杯部164之上表面部642之內周緣部，係由腔室蓋部122之凸緣部125所支撐，而第2杯部164與腔室蓋部122一起上升(即相對於腔室本體121朝上方相對地移動)。若腔室蓋部122、頂板123及第2杯部164位於圖1所示之位置，基板9便藉由省略圖示之搬送機構自腔室12被搬出(步驟S20)。在基板處理裝置1中，對複數片基板9，依序進行前述之步驟S11~S20。 Thereafter, the chamber cover portion 122 is separated from the chamber body 121 by the chamber opening and closing mechanism 131, and is raised from the position shown in FIG. 5 toward the position shown in FIG. In other words, the chamber cover portion 122 moves relatively toward the chamber body 121 in a direction away from the chamber body 121. At this time, the top plate 123 is held by the plate holding portion 222 of the chamber cover portion 122, and rises together with the chamber cover portion 122. Further, the inner peripheral edge portion of the upper surface portion 642 of the second cup portion 164 is supported by the flange portion 125 of the chamber cover portion 122, and the second cup portion 164 rises together with the chamber cover portion 122 (i.e., relative to The chamber body 121 is relatively moved upwards). When the chamber cover portion 122, the top plate 123, and the second cup portion 164 are located at the position shown in FIG. 1, the substrate 9 is carried out from the chamber 12 by a transport mechanism (not shown) (step S20). In the substrate processing apparatus 1, the above-described steps S11 to S20 are sequentially performed on the plurality of substrates 9.
如以上說明般，基板處理裝置1具備有腔室12、腔室開閉機構131、基板保持部14、基板旋轉機構15、處理液供給部180、第1杯部161、杯部移動機構162、及第2杯部164。腔室12具有腔室本體121及腔室蓋部122，並藉由利用腔室蓋部122封閉腔室本體121之上部開口，來形成包含腔室本體121及腔室蓋部122之腔室密閉構造。腔室開閉機構131使腔室蓋部122相對於腔室本體121沿著上下方向相對地移動。基板保持部14係配置於腔室12內，以水平狀態保持基板9。基板旋轉機構15以朝向上下方向之中心軸J1為中心，使基板9與基板保持部14一起旋轉。處理液供給部180對基板9上供給處理液。 As described above, the substrate processing apparatus 1 includes the chamber 12, the chamber opening and closing mechanism 131, the substrate holding portion 14, the substrate rotating mechanism 15, the processing liquid supply unit 180, the first cup portion 161, the cup moving mechanism 162, and The second cup portion 164. The chamber 12 has a chamber body 121 and a chamber cover portion 122, and the chamber chamber including the chamber body 121 and the chamber cover portion 122 is sealed by closing the upper opening of the chamber body 121 by the chamber cover portion 122. structure. The chamber opening and closing mechanism 131 relatively moves the chamber cover portion 122 in the vertical direction with respect to the chamber body 121. The substrate holding portion 14 is disposed in the chamber 12 to hold the substrate 9 in a horizontal state. The substrate rotating mechanism 15 rotates the substrate 9 together with the substrate holding portion 14 around the central axis J1 in the vertical direction. The processing liquid supply unit 180 supplies the processing liquid to the substrate 9.
第1杯部161遍及全周地位於藉由腔室蓋部122自腔室本體121離開而於基板9周圍所形成之環狀開口81之徑向外側，以承接自旋轉之基板9飛濺之處理液。杯部移動機構162使第1杯部161在環狀開口81之徑向外側之第1位置與較第1位置更下方之第2位置之間沿著於上下方向移動。第2杯部164係配置於第1杯部161之上側，在第1杯部161位於第2位置之狀態下遍及全周地位於環狀開口81之徑向外側，以承接自旋轉之基板9飛濺之處理液。第2杯部164藉由腔室開閉機構131或杯部移動機構162，而沿著上下方向移動。 The first cup portion 161 is located on the radially outer side of the annular opening 81 formed around the substrate 9 by the chamber cover portion 122 from the chamber body 121 over the entire circumference, and is processed by the substrate 9 that receives the spin. liquid. The cup moving mechanism 162 moves the first cup portion 161 in the vertical direction between the first position on the radially outer side of the annular opening 81 and the second position that is lower than the first position. The second cup portion 164 is disposed on the upper side of the first cup portion 161, and is located radially outward of the annular opening 81 over the entire circumference in a state where the first cup portion 161 is at the second position to receive the self-rotating substrate 9 Splash treatment solution. The second cup portion 164 is moved in the vertical direction by the chamber opening and closing mechanism 131 or the cup moving mechanism 162.
基板處理裝置1，在形成有環狀開口81之狀態下，藉由位於第1位置之第1杯部161接觸於腔室蓋部122及腔室本體121，而形成包含腔室蓋部122、腔室本體121及第1杯部161之第1外部密閉構造。又，在形成有環狀開口81之狀態下，藉由第2杯部164接觸於腔室蓋部122及位於第2位置之第1杯部161，而形成包含腔室蓋部122、腔室本體121、第1杯部161及第2杯部164之第2外部密閉構造。 In the substrate processing apparatus 1 , the first cup portion 161 located at the first position is in contact with the chamber lid portion 122 and the chamber body 121 in a state in which the annular opening 81 is formed, and the chamber cover portion 122 is formed. The first outer sealed structure of the chamber body 121 and the first cup portion 161. Further, in a state in which the annular opening 81 is formed, the second cup portion 164 is in contact with the chamber cover portion 122 and the first cup portion 161 at the second position, thereby forming the chamber cover portion 122 and the chamber. The second outer sealing structure of the main body 121, the first cup portion 161, and the second cup portion 164.
如此，基板處理裝置1藉由使腔室蓋部122沿著上下方向移動之腔室開閉機構131、或使第1杯部161沿著上下方向移動之杯部移動機構162，而兼作為使第2杯部164沿著上下方向移動之機構來使用。藉此，可一邊抑制使基板處理裝置1之構成元件移動之機構的增加，一邊形成複數種類之密閉空間(即腔室空間120、第1擴大密閉空間100及第2擴大密閉空間110)。其結果，可一邊抑制複數種類之處理液(例如，藥液、沖洗液及置換液)的混液，一邊分別在適合複數種類之處理之種類的密閉空間進行該複數 種類之處理(例如藥液處理、沖洗處理及置換處理)。 In the substrate processing apparatus 1, the chamber opening and closing mechanism 131 that moves the chamber lid portion 122 in the vertical direction or the cup portion moving mechanism 162 that moves the first cup portion 161 in the vertical direction is also used as the first The two cup portions 164 are used in a mechanism that moves in the up and down direction. By this, it is possible to form a plurality of types of sealed spaces (that is, the chamber space 120, the first enlarged sealed space 100, and the second enlarged sealed space 110) while suppressing an increase in the mechanism for moving the constituent elements of the substrate processing apparatus 1. As a result, it is possible to perform the processing of the plurality of types (for example, chemical liquid treatment) in a sealed space suitable for a plurality of types of treatments while suppressing a mixture of a plurality of types of treatment liquids (for example, a chemical liquid, a rinse liquid, and a replacement liquid). , rinsing treatment and replacement treatment).
如前述般，在基板處理裝置1中之基板9之處理中，於形成有環狀開口81之狀態下，藉由使第1杯部161於第1位置與腔室蓋部122及腔室本體121接觸，而形成包含腔室蓋部122、腔室本體121及第1杯部161之第1外部密閉構造(步驟S12)。然後，於步驟S12之後，在第1外部密閉構造內，第1處理液(例如藥液被供給至旋轉中之基板9)，且自基板9飛濺之第1處理液由第1杯部161所承接(步驟S13)。 As described above, in the process of the substrate 9 in the substrate processing apparatus 1, the first cup portion 161 is placed at the first position, the chamber cover portion 122, and the chamber body in a state in which the annular opening 81 is formed. The 121 contact is formed to form a first outer sealed structure including the chamber cover portion 122, the chamber body 121, and the first cup portion 161 (step S12). After the step S12, in the first outer sealed structure, the first processing liquid (for example, the chemical liquid is supplied to the rotating substrate 9), and the first processing liquid splashed from the substrate 9 is placed by the first cup portion 161. Taken (step S13).
又，藉由利用腔室蓋部122封閉腔室本體121之上部開口，而形成腔室密閉構造(步驟S14)。然後，於步驟S14之後，在腔室密閉構造內，第2處理液(例如沖洗液)被供給至旋轉中之基板9，且自基板9飛濺之第2處理液由腔室12所承接(步驟S15)。 Further, by closing the upper opening of the chamber body 121 by the chamber cover portion 122, a chamber sealing structure is formed (step S14). Then, after the step S14, in the chamber sealing structure, the second processing liquid (for example, the rinsing liquid) is supplied to the rotating substrate 9, and the second processing liquid splashed from the substrate 9 is received by the chamber 12 (step S15).
此外，在形成有環狀開口81之狀態下，藉由使第2杯部164接觸於腔室蓋部122及位於第2位置之第1杯部161，而形成包含腔室蓋部122、腔室本體121、第1杯部161及第2杯部164之第2外部密閉構造(步驟S16)。然後，於步驟S16之後，在第2外部密閉構造內，第3處理液(例如置換液)被供給至旋轉中之基板9，且自基板9飛濺之第3處理液由第2杯部164所承接(步驟S17)。 Further, in a state in which the annular opening 81 is formed, the second cup portion 164 is brought into contact with the chamber cover portion 122 and the first cup portion 161 at the second position, thereby forming the chamber cover portion 122 and the cavity. The second outer sealed structure of the chamber body 121, the first cup portion 161, and the second cup portion 164 (step S16). After the step S16, the third processing liquid (for example, the replacement liquid) is supplied to the rotating substrate 9 in the second outer sealing structure, and the third processing liquid splashed from the substrate 9 is covered by the second cup portion 164. Taken (step S17).
如此，自基板9飛濺之第1處理液並非實質地由腔室12承接，而是由第1杯部161承接，藉此可防止或抑制第1處理液之環境氣體殘留於腔室空間120之情形。其結果，可在腔室密閉構造內進行基板9之處理時，防止或抑制因第1處理液之殘留環境氣體對基板9造成之不良影響。例如，可在腔室密閉構造內進行基板 9之沖洗處理時，防止或抑制因藥液之殘留環境氣體對基板9造成之不良影響。 In this manner, the first treatment liquid splashed from the substrate 9 is not substantially received by the chamber 12, but is received by the first cup portion 161, thereby preventing or suppressing the residual atmosphere of the first treatment liquid from remaining in the chamber space 120. situation. As a result, when the substrate 9 is processed in the chamber sealing structure, the adverse effect of the residual ambient gas of the first processing liquid on the substrate 9 can be prevented or suppressed. For example, when the substrate 9 is subjected to the rinsing treatment in the chamber sealing structure, the adverse effect of the residual ambient gas of the chemical solution on the substrate 9 can be prevented or suppressed.
又，同樣地，自基板9飛濺之第3處理液並非實質地由腔室12承接，而是由第2杯部164承接，藉此可防止或抑制第3處理液之環境氣體殘留於腔室空間120之情形。其結果，可在腔室密閉構造內進行基板9之處理時，防止或抑制因第3處理液之殘留環境氣體對基板9造成之不良影響。例如，可在腔室密閉構造內進行基板9之乾燥處理時，防止或抑制因置換液之殘留環境氣體對基板9造成之不良影響。 Further, similarly, the third processing liquid splashed from the substrate 9 is not substantially received by the chamber 12, but is received by the second cup portion 164, thereby preventing or suppressing the residual atmosphere of the third processing liquid from remaining in the chamber. The situation of space 120. As a result, when the substrate 9 is processed in the chamber sealing structure, the adverse effect of the residual ambient gas of the third processing liquid on the substrate 9 can be prevented or suppressed. For example, when the drying process of the substrate 9 is performed in the chamber sealing structure, the adverse effect of the residual ambient gas of the replacement liquid on the substrate 9 can be prevented or suppressed.
如前所述，在基板處理裝置1中，第2杯部164之內周緣部與腔室蓋部122之外周緣部沿著上下方向重疊。然後，在腔室蓋部122封閉腔室本體121之上部開口之狀態下，第2杯部164由第1杯部161所支撐，第2杯部164之內周緣部朝上方離開腔室蓋部122之外周緣部。又，於腔室蓋部122藉由腔室開閉機構131而朝離開腔室本體121之方向相對地移動時，第2杯部164之內周緣部由腔室蓋部122之外周緣部所支撐，且第2杯部164與腔室蓋部122一起對腔室本體121相對地移動。 As described above, in the substrate processing apparatus 1, the inner peripheral edge portion of the second cup portion 164 and the outer peripheral edge portion of the chamber lid portion 122 overlap in the vertical direction. Then, in a state where the chamber cover portion 122 closes the upper portion of the chamber body 121, the second cup portion 164 is supported by the first cup portion 161, and the inner peripheral portion of the second cup portion 164 is separated upward from the chamber cover portion. 122 outside the peripheral part. Further, when the chamber cover portion 122 relatively moves away from the chamber body 121 by the chamber opening and closing mechanism 131, the inner peripheral edge portion of the second cup portion 164 is supported by the outer peripheral portion of the chamber cover portion 122. And the second cup portion 164 moves relative to the chamber body 121 together with the chamber cover portion 122.
如此，藉由第2杯部164朝離開腔室本體121之方向與腔室蓋部122一起相對移動，可容易地進行基板9朝向腔室12之搬入及基板9自腔室12之搬出。又，藉由將第2杯部164設為與腔室蓋部122不同之構件，可相較於第2杯部164被固定於腔室蓋部122之情形，提升腔室蓋部122及第2杯部164之形狀的自由度。 As described above, the second cup portion 164 is relatively moved together with the chamber cover portion 122 in the direction away from the chamber body 121, so that the substrate 9 can be easily carried into the chamber 12 and the substrate 9 can be carried out from the chamber 12. Further, by making the second cup portion 164 a member different from the chamber cover portion 122, the chamber cover portion 122 and the lift chamber cover portion 122 can be lifted as compared with the case where the second cup portion 164 is fixed to the chamber cover portion 122. The degree of freedom of the shape of the 2 cup portion 164.
如前所述，第2杯部164之外徑係第1杯部161之外 徑以下。藉此，可抑制基板處理裝置1之徑向之大型化。 As described above, the outer diameter of the second cup portion 164 is equal to or smaller than the outer diameter of the first cup portion 161. Thereby, the increase in the radial direction of the substrate processing apparatus 1 can be suppressed.
在基板處理裝置1中，第1杯部161於與第2杯部164接觸之位置，具備有遍及全周地在與第2杯部164之間形成密封之杯密封部(在前述例子中為唇形密封613)。杯密封部，例如為將縱剖面呈C狀且朝橫向開口之圓環狀之2個彈性構件，以使與開口部之相反側的部位相互地對向之方式配置為同心圓狀而成者。於杯密封部，有時會附著由第2杯部164所承接之第3處理液。基板處理裝置1藉由如前所述將杯密封部設置於第1杯部161，可於基板9對腔室12之搬入搬出時在使第2杯部164上升之時，防止或抑制附著於杯密封部之第3處理液與第2杯部164一起朝向上方移動。其結果，可防止或抑制第3處理液自第2杯部164落下至搬入搬出中之基板9上之情形。 In the substrate processing apparatus 1 , the first cup portion 161 is provided with a cup sealing portion that forms a seal with the second cup portion 164 over the entire circumference at a position in contact with the second cup portion 164 (in the foregoing example, Lip seal 613). The cup seal portion is, for example, two elastic members having an annular shape that is C-shaped in a longitudinal direction and open in the lateral direction, so that the portions on the opposite sides of the opening portion are arranged concentrically so as to face each other. . The third treatment liquid that is received by the second cup portion 164 may be attached to the cup seal portion. By providing the cup sealing portion in the first cup portion 161 as described above, the substrate processing apparatus 1 can prevent or suppress adhesion when the second cup portion 164 is raised when the substrate 9 is carried in and out of the chamber 12 The third processing liquid of the cup sealing portion moves upward together with the second cup portion 164. As a result, it is possible to prevent or suppress the case where the third processing liquid falls from the second cup portion 164 to the substrate 9 during loading and unloading.
在前述之基板處理裝置1及基板處理方法中，可進行各種變更。 Various changes can be made in the substrate processing apparatus 1 and the substrate processing method described above.
例如，在圖3所示之基板處理方法中，雖於腔室密閉狀態下進行步驟S15之沖洗處理及步驟S19之乾燥處理之2種類的處理，但並不一定要在腔室密閉狀態下進行2種類之處理。在前述之基板處理方法中，只要於腔室密閉狀態、第1外部密閉狀態及第2外部密閉狀態之各狀態下，進行1種類以上之處理即可。又，腔室密閉狀態、第1外部密閉狀態及第2外部密閉狀態之處理的順序，亦可進行各種變更。 For example, in the substrate processing method shown in FIG. 3, the two types of processing of the rinsing process of step S15 and the drying process of step S19 are performed in a sealed state of the chamber, but it is not necessarily performed in a sealed state of the chamber. 2 types of processing. In the substrate processing method described above, one or more types of processing may be performed in each of the chamber sealed state, the first external sealed state, and the second external sealed state. Further, the order of the processing of the chamber sealed state, the first external sealed state, and the second external sealed state can be variously changed.
在基板處理裝置1中，第2杯部164之外徑亦可較第1杯部161之外徑大。又，被配置於第1杯部161與第2杯部164接觸之位置之前述的杯密封部，亦可被設置於第2杯部164。 In the substrate processing apparatus 1, the outer diameter of the second cup portion 164 may be larger than the outer diameter of the first cup portion 161. Further, the cup seal portion disposed at a position where the first cup portion 161 and the second cup portion 164 are in contact with each other may be provided in the second cup portion 164.
在基板處理裝置1中，第2杯部164亦可在圖1及圖6所示之狀態下，被固定於腔室蓋部122。具體而言，第2杯部164亦可在第2杯部164之上表面部642之內周緣部接觸於腔室蓋部122之凸緣部125之狀態下，被固定於腔室蓋部122。於該情形時，第2杯部164之上下方向之移動並不利用杯部移動機構162，而是利用腔室開閉機構131來進行。又，在圖6所示之狀態下，將第1杯部161與杯對向部163之間之上下方向之距離設為較圖示者更大，則於形成腔室密閉構造時，第1杯部161會進一步下降。 In the substrate processing apparatus 1, the second cup portion 164 may be fixed to the chamber lid portion 122 in the state shown in FIGS. 1 and 6 . Specifically, the second cup portion 164 may be fixed to the chamber cover portion 122 in a state where the inner peripheral portion of the upper surface portion 642 of the second cup portion 164 is in contact with the flange portion 125 of the chamber cover portion 122. . In this case, the movement of the second cup portion 164 in the up and down direction is performed by the chamber opening and closing mechanism 131 without using the cup moving mechanism 162. Moreover, in the state shown in FIG. 6, the distance between the first cup portion 161 and the cup opposing portion 163 in the vertical direction is larger than that of the figure, and the first one is formed when the chamber sealing structure is formed. The cup portion 161 will further descend.
或者，第2杯部164亦可在圖4及圖5所示之狀態下被固定於第1杯部161。具體而言，第2杯部164亦可在第2杯部164之側壁部641之下端部接觸於第1杯部161之上表面部612之狀態下，被固定於第1杯部161。於該情形時，第2杯部164之上下方向之移動並不利用腔室開閉機構131，而是利用杯部移動機構162來進行。又，腔室蓋部122之外徑可設為較第2杯部164之上表面部642之內徑略小，並於形成圖6所示之第2外部密閉構造時，在第2杯部164之上表面部642之內周緣與腔室蓋部122之外側面之間形成密封。具體而言，例如於第2杯部164之上表面部642之內周緣設置唇形密封，並藉由該唇形密封與腔室蓋部122之外側面接觸(即藉由第2杯部164經由該唇形密封而接觸於腔室蓋部122)，而於第2杯部164與腔室蓋部122之間，形成防止氣體及液體通過之密封。 Alternatively, the second cup portion 164 may be fixed to the first cup portion 161 in the state shown in FIGS. 4 and 5 . Specifically, the second cup portion 164 may be fixed to the first cup portion 161 while the lower end portion of the side wall portion 641 of the second cup portion 164 is in contact with the upper surface portion 612 of the first cup portion 161. In this case, the movement of the second cup portion 164 in the up and down direction is performed by the cup moving mechanism 162 without using the chamber opening and closing mechanism 131. Further, the outer diameter of the chamber cover portion 122 may be slightly smaller than the inner diameter of the upper surface portion 642 of the second cup portion 164, and the second outer cup portion may be formed in the second outer sealed structure shown in FIG. A seal is formed between the inner periphery of the upper surface portion 642 and the outer side of the chamber cover portion 122. Specifically, for example, a lip seal is provided on the inner periphery of the upper surface portion 642 of the second cup portion 164, and the lip seal is in contact with the outer surface of the chamber cover portion 122 (ie, by the second cup portion 164). The lip seal is in contact with the chamber cover portion 122), and a seal for preventing passage of gas and liquid is formed between the second cup portion 164 and the chamber cover portion 122.
在基板處理裝置1中，亦可省略頂板123。又，上部噴嘴181並不一定要對向於基板9之上表面91之中央部而被固定。上部噴嘴181例如亦可為於基板9之上方一邊在基板9之中央部與 外周緣部之間重複進行往返移動一邊供給處理液之構造。 In the substrate processing apparatus 1, the top plate 123 may be omitted. Further, the upper nozzle 181 does not have to be opposed to the central portion of the upper surface 91 of the substrate 9 to be fixed. For example, the upper nozzle 181 may have a structure in which the processing liquid is supplied while repeatedly moving back and forth between the central portion and the outer peripheral edge portion of the substrate 9 above the substrate 9.
基板處理裝置1，亦可設置對腔室空間120供給氣體並加以加壓之加壓部。腔室空間120之加壓係在腔室12被密閉之腔室密閉狀態下進行，使腔室空間120成為較大氣壓更高之加壓環境。再者，惰性氣體供給部186亦可兼作為該加壓部。 The substrate processing apparatus 1 may be provided with a pressurizing portion that supplies and pressurizes the gas in the chamber space 120. The pressurization of the chamber space 120 is performed in a sealed state in which the chamber 12 is sealed, so that the chamber space 120 becomes a pressurized environment having a higher atmospheric pressure. Further, the inert gas supply unit 186 may also serve as the pressurizing unit.
腔室開閉機構131並不一定要使腔室蓋部122沿著上下方向移動，亦可在腔室蓋部122被固定之狀態下使腔室本體121沿著上下方向移動。腔室12並不一定被限定為大致圓筒狀，亦可為各種形狀。 The chamber opening and closing mechanism 131 does not necessarily have to move the chamber lid portion 122 in the vertical direction, and the chamber body 121 can be moved in the vertical direction while the chamber lid portion 122 is fixed. The chamber 12 is not necessarily limited to a substantially cylindrical shape, and may have various shapes.
基板旋轉機構15之定子部151及轉子部152之形狀及構造，亦可進行各種變更。轉子部152並不一定要在漂浮狀態下旋轉，亦可於腔室12內設置機械性地支撐轉子部152之導桿等構造，而使轉子部152沿著該導桿旋轉。基板旋轉機構15並不一定要為中空馬達，亦可將軸旋轉型之馬達作為基板旋轉機構而加以利用。 The shape and structure of the stator portion 151 and the rotor portion 152 of the substrate rotating mechanism 15 can be variously changed. The rotor portion 152 does not have to be rotated in a floating state, and a structure such as a guide rod that mechanically supports the rotor portion 152 may be provided in the chamber 12 to rotate the rotor portion 152 along the guide rod. The substrate rotating mechanism 15 does not have to be a hollow motor, and a shaft rotating type motor can be used as a substrate rotating mechanism.
第1杯部161及第2杯部164之形狀，亦可適當地變更。基板處理裝置1，亦可藉由第1杯部161之上表面部612以外之部位(例如側壁部611)與腔室蓋部122相接，而形成第1擴大密閉空間100。又，亦可藉由第2杯部164之上表面部642以外之部位(例如側壁部641)與腔室蓋部122相接，而形成第2擴大密閉空間110。 The shapes of the first cup portion 161 and the second cup portion 164 may be changed as appropriate. The substrate processing apparatus 1 may be in contact with the chamber lid portion 122 by a portion other than the upper surface portion 612 of the first cup portion 161 (for example, the side wall portion 611), thereby forming the first enlarged sealed space 100. Further, the second enlarged sealed space 110 may be formed by being in contact with the chamber cover portion 122 by a portion other than the upper surface portion 642 of the second cup portion 164 (for example, the side wall portion 641).
上部噴嘴181及下部噴嘴182之形狀，並未被限定為突出之形狀。只要為具有吐出處理液之吐出口或噴出惰性氣體之噴出口之部位，皆包含於本實施形態之噴嘴的概念中。 The shapes of the upper nozzle 181 and the lower nozzle 182 are not limited to the shape of the protrusion. The portion having the discharge port for discharging the treatment liquid or the discharge port for discharging the inert gas is included in the concept of the nozzle of the present embodiment.
基板處理裝置1，亦可藉由自藥液供給部183所供給之藥液，進行利用前述之蝕刻處理以外之化學反應之各種處理，例如進行基板上之氧化膜之去除或由顯影液進行之顯影等。 The substrate processing apparatus 1 can perform various processes of chemical reactions other than the above-described etching treatment by the chemical liquid supplied from the chemical solution supply unit 183, for example, removing the oxide film on the substrate or performing the development by the developer. Development, etc.
基板處理裝置1，除了半導體基板以外，亦可被利用於液晶顯示裝置、電漿顯示器、FED(field emission display；場發射顯示器)等顯示裝置所使用之玻璃基板之處理。或者，基板處理裝置1亦可被利用於光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板及太陽能電池用基板等之處理。 The substrate processing apparatus 1 can be used for processing of a glass substrate used in a display device such as a liquid crystal display device, a plasma display, or a FED (field emission display), in addition to a semiconductor substrate. Alternatively, the substrate processing apparatus 1 can be used for processing of a substrate for a disk, a substrate for a disk, a substrate for a magnet disk, a substrate for a mask, a substrate for a ceramic substrate, and a substrate for a solar cell.
上述實施形態及各變形例之構成，只要不相互矛盾皆可適當地加以組合。 The configurations of the above-described embodiments and modifications are appropriately combined as long as they do not contradict each other.
雖已詳細地描述並說明本發明，但以上說明係為例示性而非限定性者。因此，只要不脫離本發明之範圍，即可為各種變形與態樣。 The present invention has been described and illustrated in detail, by way of illustration Therefore, various modifications and changes may be made without departing from the scope of the invention.
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| TWI792551B (en) * | 2020-12-09 | 2023-02-11 | 韓商细美事有限公司 | Substrate processing apparatus and substrate processing method including a processing liquid supply unit |
| TWI830757B (en) * | 2018-08-10 | 2024-02-01 | 日商荏原製作所股份有限公司 | Substrate rotation device, substrate cleaning device, substrate processing device, and control method for substrate rotation device |
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| JP4803592B2 (en) * | 2006-06-16 | 2011-10-26 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| KR100900628B1 (en) * | 2006-09-15 | 2009-06-02 | 다이닛뽕스크린 세이조오 가부시키가이샤 | Substrate processing apparatus and substrate processing method |
| JP5606992B2 (en) * | 2011-06-09 | 2014-10-15 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP6010398B2 (en) * | 2012-08-31 | 2016-10-19 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| JP6057624B2 (en) * | 2012-09-03 | 2017-01-11 | 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ | Cup and substrate processing equipment |
| JP6017262B2 (en) * | 2012-10-25 | 2016-10-26 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP5956946B2 (en) * | 2013-03-13 | 2016-07-27 | 東京エレクトロン株式会社 | Liquid processing apparatus and liquid processing method |
| JP6017999B2 (en) * | 2013-03-15 | 2016-11-02 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| JP2014179489A (en) * | 2013-03-15 | 2014-09-25 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP2015012013A (en) * | 2013-06-26 | 2015-01-19 | 京セラ株式会社 | Multilayer wiring board and probe card including the same |
| JP6057886B2 (en) * | 2013-12-25 | 2017-01-11 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| CN105849871B (en) * | 2013-12-25 | 2018-05-29 | 株式会社思可林集团 | Substrate board treatment |
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| TWI830757B (en) * | 2018-08-10 | 2024-02-01 | 日商荏原製作所股份有限公司 | Substrate rotation device, substrate cleaning device, substrate processing device, and control method for substrate rotation device |
| TWI792551B (en) * | 2020-12-09 | 2023-02-11 | 韓商细美事有限公司 | Substrate processing apparatus and substrate processing method including a processing liquid supply unit |
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| WO2018055877A1 (en) | 2018-03-29 |
| CN109716489A (en) | 2019-05-03 |
| JP6706564B2 (en) | 2020-06-10 |
| TWI635529B (en) | 2018-09-11 |
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| JP2018049985A (en) | 2018-03-29 |
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