TW201810534A - 高電壓電晶體裝置 - Google Patents

高電壓電晶體裝置 Download PDF

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TW201810534A
TW201810534A TW106116104A TW106116104A TW201810534A TW 201810534 A TW201810534 A TW 201810534A TW 106116104 A TW106116104 A TW 106116104A TW 106116104 A TW106116104 A TW 106116104A TW 201810534 A TW201810534 A TW 201810534A
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semiconductor
layer
transistor device
gate
semiconductor layer
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TW106116104A
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TWI637463B (zh
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希爾凡 亨利 包都特
寬特 葛斯荷夫
朱爾根 法爾
彼特 傑瓦卡
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格羅方德半導體公司
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    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
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Abstract

提供一種半導體裝置，包含：絕緣體上覆矽(SOI)基材，該SOI基材包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；以及電晶體裝置，其中，該電晶體裝置包含由一部分該半導體主體基材所形成的閘極電極、由一部分該埋置型氧化物層所形成的閘極絕緣層、及形成於一部分該半導體層中的通道區。

Description

高電壓電晶體裝置
大體上，本文中所揭示的專利標的關於積體電路，而且更尤指電晶體裝置，尤其是高電壓操作用的具有(超)低/零臨界電壓的場效電晶體。
半導體晶圓上形成的積體電路一般包括大量電路元件，該等電路元件形成電氣電路。除了舉例如場效電晶體及/或雙極電晶體等主動裝置外，積體電路還可包括諸如電阻器、電感器及/或電容器等被動裝置。特別的是，在使用CMOS技術製作複雜積體電路期間，數百萬個電晶體，亦即N通道電晶體及P通道電晶體，是在包括結晶半導體層的基材上形成。
舉例而言，MOS電晶體無論是N通道電晶體或P通道電晶體，都包含所謂由高摻雜汲極與源極區的界面所形成的PN接面(junction)，該汲極區與該源極區之間佈置有反相或弱式摻雜通道區。通道區的導電性即導電通道的驅動電流能力，是通過形成於該通道區附近的閘極電極並以薄絕緣層與其分隔的閘極電極來控制。通道區的導電性在對閘極電極施加適當控制電壓而形成導電通道 時，還取決於摻質濃度、多數電荷載子的遷移率，對於通道區順著電晶體的寬度方向的給定延展，還取決於源極與汲極區之間的距離，該距離亦稱為通道長度。因此，結合對閘極電極施加控制電壓時於絕緣層下面快速建立導電通道的能力，通道區的整體導電性實質決定MOS電晶體的效能。
對於整流及/或切換應用，舉例而言，需要維持高供應電壓(VDD)的高電壓(即高供應電壓)電晶體。開發用於整合功率開關與控制電路的單晶片製程在功率IC開發領域中是主要趨勢。舉例而言，LDMOS(側向雙擴散MOS)製程目前正應用於製造單塊IC。舉例而言，作為MOSFET的變種，LDMOS FET是射頻功率放大器的關鍵組件，在基地台中用於個人通訊系統(例如，GSM、EDGE等)。高崩潰電壓是LDMOS FET的最重要優點。然而，LDMOS FET無法在完全耗盡型絕緣體上覆矽(Fully Depleted Silicon-on Insulator；FDSOI)方法裡輕易地整合於(MOS)FET的製造程序中。另一方面，根據完全耗盡型絕緣體上覆矽(FDSOI)方法所產生的常見MOS FET由於間隔物薄及或閘極氧化物衰減而未維持高供應電壓(例如，VDD>1.8V)。
第1a圖繪示包含半導體基材101、埋置型氧化物層102及半導體層103的SOI基材上所形成的典型FDSOI場效電晶體(FET)100。FDSOI FET 100可在22奈米節點上製造，並且包含閘極電極104、隆起源極105與隆 起汲極106、以及閘極介電質107。間隔物108是在閘極電極104的側壁上形成。FDSOI FET 100適用於以低於1.8V的供應電壓操作。然而，實際上，特定應用中需要大於3V的供應電壓，例如，高頻切換操作時便需要。如果對閘極電極104與汲極106施加電壓(源極105連接至接地)，如3.3V，則薄閘極介電質107及薄間隔物108出現崩潰，並且FDSOI FET 100的操作劣化，或FDSOI FET 100完全無法操作。
所屬技術領域中已知有用以在FDSOI FET(舉例而如第1a圖所示的FDSOI FET 100)的製造程序流程中共整合高電壓電晶體裝置的方法。第1b圖展示包含P通道FDSOI FET 110(類似於第1a圖所示的FDSOI FET 100)及P通道高電壓FET 120的半導體裝置的一實施例。製造始於提供包含半導體主體基材111、埋置型氧化物層112及半導體層113的SOI基材。P通道FDSOI FET 110包含閘極電極114、隆起源極115與隆起汲極116、以及閘極介電質117。提供多層絕緣結構118，其包含在閘極電極114的側壁上形成的間隔物。此外，閘極電極114、隆起源極115與隆起汲極116的表面上形成矽化物層119以增強電接觸特性。
基於上述理由，無法形成作為FDSOI裝置的高電壓FET 120。反而，必須將高電壓FET 120形成為在半導體主體基材111中形成具有通道區的主體裝置。高電壓FET 120包含閘極電極124。通過適當的摻雜而在半 導體主體基材111中形成源極區125與汲極區126。提供多層間隔物結構128，並且通過形成矽化物層129將閘極電極124、及源極區125與汲極區126矽化，可連同矽化物層119在單一製程中形成矽化物層129。
然而，高電壓FET 120與FDSOI FET 110的共整合關於許多單獨的遮罩與沉積步驟，尤其是相比於純FDSOI處理具有數種附加遮罩的雙氧化物與間隔物處理方案。
鑒於上文，本發明關於電晶體裝置、及用於形成電晶體裝置的技術，可用於高頻、高電壓操作，具有可在FDSOI製造程序流程中整合但不使製造程序因另外的沉積與遮罩步驟而更複雜的高可靠度。
以下介紹本發明的簡化概要，以便對本發明的一些態樣有基本的瞭解。本概要並非本發明的詳盡概述。用意不在於指認本發明的重要或關鍵要素，或敘述本發明的範疇。目的僅在於以簡化形式介紹一些概念，作為下文更詳細說明的引言。
大體上，本文中所揭示的專利標的關於半導體裝置、及用於製作該半導體裝置的方法，其中以完全耗盡型絕緣體上覆矽(FDSOI)技術為基礎，可增強N通道電晶體及P通道電晶體的電晶體效能。尤其是，提供容許供應電壓高於2.5V或3V的高電壓FET，其舉例而言，可在FDSOI FET製造程序流程裡按照共整合方式來製造。
本文中所揭示的一種說明性半導體裝置包含：絕緣體上覆矽(SOI)基材，該SOI基材包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；以及電晶體裝置，其中該電晶體裝置包含由一部分該半導體主體基材所形成(或在其中形成)的閘極電極、由一部分該埋置型氧化物層所形成(或在其中形成)的閘極絕緣層、及形成於一部分該半導體層中(或由其所形成)的通道區。
再者，提供一種半導體裝置，其包含：絕緣體上覆矽(SOI)基材，該SOI基材包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；第一電晶體裝置，例如FDSOI FET，其包含形成於該半導體層上方的第一閘極電極、及形成於該第一閘極電極與該半導體層之間的第一閘極介電質，舉例而言，第一閘極介電質包含高k(例如，k>5)介電材料；以及第二(高電壓)電晶體裝置，其包含形成於該半導體主體基材中(或由其某部分所形成)的第二閘極電極、及形成於該埋置型氧化物層中(或由其某部分所形成)的第二閘極介電質。
一種形成本文中所揭示半導體裝置的說明性方法包括：提供絕緣體上覆矽(SOI)基材，該SOI基材包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；以及在該絕緣體上覆矽基材中及上形成第一電晶體裝置， 其包括下列步驟：在該半導體層上形成第一閘極絕緣層、及在該第一閘極絕緣層上形成第一閘極電極。該方法更包括在該絕緣體上覆矽基材中形成第二電晶體裝置，其包括下列步驟：在該半導體主體基材中形成(或由其某部分形成)第二閘極電極、及在該埋置型氧化物層中形成(或由其某部分形成)第二閘極絕緣層。尤其是，該第一電晶體裝置可以是低電壓FDSOI FET，並且該第二電晶體裝置可以是高電壓電晶體。該第二電晶體可以是可操作於較高電壓(例如，以高於2.5V或3V的供應電壓操作)的低臨界電壓或超低臨界電壓電晶體。
從而製造或提供的電晶體可在高頻應用中當作切換裝置使用。亦提供一種驅動半導體裝置(電晶體裝置)的方法，其中該半導體裝置包含絕緣體上覆矽(SOI)基材，該SOI基材包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；以及電晶體裝置，其中該電晶體裝置包含由一部分該半導體主體基材所形成(或在其中形成)的閘極電極、由一部分該埋置型氧化物層所形成(或在其中形成)的閘極絕緣層、及形成於一部分該半導體層中(或由其所形成)的通道區、例如形成於該半導體層上方的源極與汲極區、形成於該半導體層上方的上電極、及形成於該源極與汲極區和該上電極之間的側壁間隔物。該方法包括施加大於2V(例如，大於2.5V或3V、或在2-3.6V的範圍內)的第一電壓至閘極電極，施加與該第一電壓具有同值的第 二電壓至汲極，施加小於2V(例如，約1.8V)的第三電壓至上電極，以及連接源極區至接地。
10‧‧‧電晶體裝置或場效電晶體(FET)裝置
11‧‧‧半導體主體基材
12‧‧‧埋置型氧化物(BOX)層
13‧‧‧半導體層
14‧‧‧上電極
15‧‧‧源極、源極電極、隆起源極區或隆起半導體區
16‧‧‧汲極、汲極電極、隆起汲極區或隆起半導體區
17‧‧‧介電層或閘極介電質
18‧‧‧側壁間隔物
19‧‧‧(前)閘極電極
20‧‧‧半導體裝置
20a‧‧‧N通道FET
20b‧‧‧P通道FET
21‧‧‧半導體主體基材
22‧‧‧埋置型氧化物(BOX)層
23‧‧‧半導體層
24、24'‧‧‧上電極
25、25'‧‧‧源極電極
26、26'‧‧‧汲極電極
27、27'‧‧‧閘極介電質
28a‧‧‧P型井
28b‧‧‧N型井
29‧‧‧淺溝槽隔離(STI)
30‧‧‧半導體裝置
30a‧‧‧N通道FET
30b‧‧‧P通道FET
31‧‧‧半導體主體基材
32‧‧‧埋置型氧化物(BOX)層
33‧‧‧半導體層
34、34'‧‧‧上電極
35、35'‧‧‧源極電極
36、36'‧‧‧汲極電極
37、37'‧‧‧閘極介電質
38a‧‧‧N型井
38b‧‧‧P型井
39‧‧‧淺溝槽隔離(STI)
100‧‧‧FDSOI FET
101‧‧‧半導體基材
102‧‧‧埋置型氧化物層
103‧‧‧半導體層
104‧‧‧閘極電極
105‧‧‧源極或隆起源極
106‧‧‧汲極或隆起汲極
107‧‧‧閘極介電質
108‧‧‧間隔物
110‧‧‧FDSOI FET或P通道FDSOI FET
111‧‧‧半導體主體基材
112‧‧‧埋置型氧化物層
113‧‧‧半導體層
114‧‧‧閘極電極
115‧‧‧隆起源極
116‧‧‧隆起汲極
117‧‧‧閘極介電質
118‧‧‧多層絕緣結構
119‧‧‧矽化物層
120‧‧‧高電壓FET或P通道高電壓FET
124‧‧‧閘極電極
125‧‧‧源極區
126‧‧‧汲極區
128‧‧‧多層間隔物結構
129‧‧‧矽化物層
A、B、C、D‧‧‧接觸
本發明可搭配附圖參照以下說明來瞭解，其中相似的參考元件符號表示相似的元件，並且其中：第1a圖繪示先前技術的FDSOI FET；第1b圖繪示先前技術的包含FDSOI FET及高電壓FET的半導體裝置；第2圖根據本發明的一說明性實施例，繪示高電壓FET裝置；第3圖根據本發明的一說明性實施例，繪示包含低臨界電壓的半導體裝置-高供應電壓FET裝置；以及第4圖根據本發明的一實施例，繪示包含超低臨界電壓的半導體裝置-高供應電壓FET裝置。
儘管本文所揭示的專利標的易受各種修改和替代形式所影響，其特定具體實施例仍已通過圖式中的實施例予以表示並且在本文中予以詳述。然而，應瞭解的是，本文中特定具體實施例的說明用意不在於將本發明限制於所揭示的特定形式，相反地，如隨附申請專利範圍所界定，用意在於涵蓋落於本發明的精神及範疇內的所有修改、均等例、及替代方案。
下面說明本發明的各項說明性具體實施 例。為了澄清，本說明書中並未說明實際實作態樣的所有特徵。當然，將會領會昀是，在開發任何此實際具體實施例時，必須做出許多實作態樣特定決策才能達到開發者的特定目的，例如符合系統有關及業務有關的限制條件，這些限制條件會隨實作態樣不同而變。此外，將瞭解的是，此一開發努力可能複雜且耗時，雖然如此，仍會是受益於本發明的所屬領域技術人員的例行工作。
以下具體實施例經充分詳述而使所屬領域技術人員能夠利用本發明。要理解的是，其它具體實施例基於本發明將顯而易見，並且可施作系統、結構、程序或機械變更而不脫離本發明的範疇。在以下說明中，提出特定數值細節是為了得以透徹理解本發明。然而，將顯而易見的是，本發明的具體實施例無需此等特定細節也可予以實踐。為了避免混淆本發明，並且詳細揭示一些眾所周知的電路、系統組態、結構組態以及程序步驟。
本發明現將參照附圖作說明。各種結構、系統及裝置在圖式中只是為了闡釋而繪示，為的是不要因所屬領域技術人員眾所周知的細節而混淆本發明。雖然如此，仍將附圖包括進來以說明並闡釋本發明的說明性實施例。本文中使用的字組及詞組應瞭解並詮釋為與所屬領域技術人員瞭解的字組及詞組具有一致的意義。與所屬領域技術人員瞭解的通常或慣用意義不同的詞彙或詞組(即定義)的特殊定義，用意不在於通過本文詞彙或詞組的一致性用法提供暗示。就一詞彙或詞組用意在於具有特殊意義的 方面來說，即有別於所屬領域技術人員瞭解的意義，此一特殊定義應會按照為此詞彙或詞組直接且不含糊地提供此特殊定義的定義方式，在本說明書中明確提出。
空間參考“頂端”、“底端”、“上”、“下”、“垂直”、“水平”及類似者於本文中使用時，若關於FET裝置的結構，可為求便利性而使用。這些參考的用意在於僅為了教示目的而以與圖式一致的方式加以使用，而且用意不在於當作FET結構的絕對參考。舉例而言，FET可按照與圖式所示方位不同的任何方式予以空間定向。提及圖式時，“垂直”用於指稱為正交於半導體層表面的方向，而“水平”用於指稱為平行於半導體層表面的方向。“上”用於指稱為遠離半導體層的垂直方向。安置於另一元件“上面”(“下面”)的一元件相比於該另一元件，位於較遠離(較靠近)半導體層表面處。
如所屬領域技術人員完整閱讀本申請書後將輕易瞭解的是，本方法適用於例如NMOS、PMOS、CMOS等各種技術，並且原則上輕易適用於各種裝置，包括但不限於邏輯電路、記憶體裝置、SRAM裝置等。本文中所述的技術與技術可用於製作MOS積體電路裝置，包括NMOS積體電路裝置、PMOS積體電路裝置、以及CMOS積體電路裝置。尤其是，本文中所述的程序步驟搭配形成積體電路用閘極結構的任何半導體裝置製作程序來利用，此等積體電路包括平面型及非平面型這兩種積體電路。雖然用語“MOS”適當地指具有金屬閘極電極及氧化物閘極絕緣體 的裝置，該用語全文用於意指包括導電閘極電極(金屬或其它導電材料都可以)的任何半導體裝置，該導電閘極電極置於閘極絕緣體(氧化物或其它絕緣體都可以)上方，進而置於半導體主體基材上方。
大體上，說明一種具有(超)低臨界電壓的高電壓電晶體裝置，以及如何製造及操作具有此一電晶體裝置而容許用於較高供應電壓(高電壓操作)的半導體裝置。請參閱第2、3及4圖，現將更詳細描述說明性具體實施例。
如第2圖所示，根據本發明的半導體裝置包含在SOI基材(尤其是FDSOI基材)上形成的FET裝置10。FET裝置10可以是MOSFET。SOI基材包含半導體主體基材11、形成於半導體主體基材11上的埋置型氧化物(buried oxide；BOX)層12、以及形成於BOX層12上的半導體層13(主體層)。半導體層13可包含大量的矽，原因在於高積體密度的半導體裝置可基於矽進行量產來形成，理由是可用性已增強且過去數十年已開發建置良好的製程技術。然而，可使用任何其它適當的半導體材料，例如，含有諸如鍺、碳、矽/鍺、矽/碳、其它II-VI族或III-V族半導體化合物及類似者等其它的等電子組件(iso-electronic components)的矽基礎材料。
BOX層12可包含(二)氧化矽或硼矽酸玻璃或硼磷矽酸鹽玻璃(BPSG)。BOX層可由不同層所組成，該等不同層其中一者可包含BPSG、或SiO2-包含硼或磷的化合物。半導體主體基材11可包含矽或由矽所組成，尤其 是單晶矽。其它材料可用於形成半導體主體基材11，舉例如鍺、矽鍺、磷酸鎵、砷化鎵等。半導體層13的厚度範圍可以是5奈米至30奈米，尤其是5奈米至15奈米，並且BOX層12的厚度範圍可以是10奈米至50奈米，尤其是10奈米至30奈米，而且更特別的是15奈米至25奈米。
可在絕緣體上覆矽基材中形成淺溝槽隔離(shallow trench isolation；STI)區(第2圖未示)，以便將電晶體裝置10與SOI基材上形成的IC的其它電氣組件電隔離。STI區在形成方面，可貫穿半導體層13及BOX層12並且在半導體主體基材11中蝕刻開口，以及以例如一些氧化物材料的一些絕緣材料來填充該開口。
FET裝置10包含上電極14、源極15與汲極16。上電極14通過閘極介電質17與半導體層13分開。在上電極14的側壁上形成側壁間隔物18。上電極14及源極15與汲極16的上表面可進行矽化。矽化作用可包含在隆起半導體區15與16的表面、及上閘極14的上表面上沉積NiPt、Ni或Co層，以及進行一或多個熱退火程序。產生的矽化區提供低電阻接觸。
上電極14可包含多晶矽層及/或含金屬層。含金屬層舉例而言，可包含氮化鈦(TiN)、氮化鉭(TaN)、鉭(Ta)、鎢(W)其中至少一者。含金屬層可以較薄，所具厚度低於50奈米，尤其是低於20奈米。上電極14可在含金屬層上面包含半導體層，舉例而言，包含矽，例如未摻雜多結晶矽。閘極電極材料的半導體層可包含未摻雜 多結晶矽。功函數調整層可設於上電極14的金屬閘極層與閘極介電質17之間。
閘極介電質17可包含高k材料或由其所組成，所具介電常數舉例為k>5。高k材料可包含諸如氧化鉿、二氧化鉿及氮氧化鉿矽其中至少一者的過渡金屬氧化物。根據一些例示性具體實施例，(高k)介電層17可直接在半導體層13上形成。根據其它具體實施例，(高k)介電層17可在絕緣層(圖未示)上形成，該絕緣層包含形成於半導體層13上的氧化矽。功函數調整層可包含氮化鈦(TiN)或所屬技術領域已知的任何其它適當的功函數調整金屬或金屬氧化物。
側壁間隔物18可包括二氧化矽，並且可通過隨後磊晶生長或沉積閘極結構的各別層件，並且適度將其蝕刻，按照多層形式來提供。
源極與汲極電極15與16可通過(選擇性)磊晶，由半導體層所形成，例如包含矽的半導體層。藉此，相鄰於側壁間隔物18形成隆起源極與汲極區15與16。隆起源極與汲極區15與16舉例而言，可具有範圍20奈米至50奈米的厚度。
注意到的是，形成具有高k金屬閘極(high-k metal gate；HKMG)結構的平面型或3D電晶體基本上有兩種眾所周知的處理方法。在取代閘極技術中，所謂的“虛設(dummy)”或犧牲閘極結構在初始時形成，並且在進行用以形成裝置的許多程序操作中留在原位，例如形成摻雜源 極/汲極區，進行退火程序以修復因離子布植程序對基材所造成的破壞，並且活化植入的摻質材料。在程序流程中的一些製點，移除犧牲閘極結構以界定就裝置形成HKMG閘極結構處的閘極凹穴。另一方面，使用“閘極先製(gate first)”技術關於跨布基材形成材料層堆疊，其中材料堆疊包括高k閘極絕緣層、一或多個金屬層、多晶矽層、以及保護性覆蓋層，例如氮化矽。進行一或多個蝕刻程序以圖案化材料堆疊，藉以就電晶體裝置界定基本閘極結構。取代閘極程序流程及閘極先製程序流程兩者都可根據本發明來運用。
根據本發明，FET裝置10包含在半導體主體基材11中形成並通過接觸A接觸的(前)閘極電極19。(前)閘極電極19可通過一部分半導體主體基材11來形成，亦即，半導體主體基材11可作用為(前)閘極電極19。上電極14通過接觸B來接觸，源極電極15通過接觸C來接觸，並且汲極電極16通過接觸D來接觸(請參閱第2圖)。可對接觸A與D施加高於2V(尤其是高於3V)的供應電壓，並且藉此施加至前閘極電極19與汲極電極16，並且可使接觸C，從而還有源極15，接觸至接地。
根據替代實施例，上電極14可維持處於浮動狀態(浮動上電極14)或可透過接觸B施加電壓至上電極14，藉此容許對FET裝置10的操作進行雙閘極控制。雙閘極控制容許獲得所欲強度的導通電流。施加至上電極14的電壓若有限而使得上電極14作用為背電極，則必須觀察 的是上電極14與源極15之間的電壓降、及上電極14與汲極16之間的電壓降必須夠低，才能防止間隔物18崩潰。舉例而言，對汲極電極16與前閘極電極19施加3.6V時，若高於1.8V的電壓降出現崩潰，則施加至上電極14的電壓必須不超過3.6V至1.8V。
在第2圖所示的組態中，較厚的BOX層12不僅用於前閘極電極19的閘極氧化物(閘極介電質)，還用於使半導體主體基材11中形成的前閘極電極19與源極電極15及汲極電極16電絕緣。因此，可避免類似於第2圖所示閘極介電質17的閘極介電質出現崩潰、及類似於第2圖所示側壁間隔物18的間隔物出現崩潰的問題。尤其是，可將如第2圖所示FET裝置10的高電壓FET的形成輕易地整合在用於製造FDSOI(MOS)FET的程序流程中，舉例而言，用於製造適用於較低電壓(例如<1.8V)操作的單閘極或延展閘極FET。舉例而言，第2圖所示的電晶體裝置可與如第1a圖所示的電晶體裝置予以共製造，並且第2圖所示的電晶體裝置的背閘極可由相同材料所構成，及/或在相同製造程序中，如用於形成第1a圖所示的電晶體裝置100的閘極電極104。
注意到的是，通過在不同區域中適度摻雜半導體主體基材11，可微調類似於第2圖所示的高電壓裝置。舉例而言，汲極飽和電流可通過適當良好形成及/或選擇關於的功函數來調整。
第3圖根據本發明繪示包含低臨界電壓FET 裝置容許高電壓操作的半導體裝置20。半導體裝置20包含N通道FET 20a及p通道FET 20b。N通道FET 20a及P通道FET 20b是在FDSOI基材上形成，FDSOI基材包含半導體主體基材21、形成於半導體主體基材21上的埋置型氧化物(BOX)層22、及形成於BOX層22上的半導體層23(主動層)。通道區是在半導體層22中形成。N通道FET 20a及P通道FET 20b可以是延展閘極裝置，其舉例而言，包含延展至第3圖所示區域外側的半導體主體基材21或BOX層22的閘極電極。可如第2圖所示內容所述就SOI基材的不同層件選擇相同材料。尤其是，半導體層23可以是結晶矽層。
N通道FET 20a與P通道FET 20b兩者分別包含上電極24、24'、源極電極25、25'與汲極電極26、26'。上電極24、24'是自半導體層23起通過閘極介電質27、27'分開。再次地，第2圖所示內容中所述的材料亦可用於第3圖所示的對應層。尤其是，上電極24、24'可包含金屬閘極層及/或多晶矽閘極層，並且閘極介電質27、27'可代表比二氧化矽其中一者具有更大介電常數的高k介電質，例如：k>5。
P型井28a是在N通道FET 20a下面的半導體主體基材21中通過適度摻雜所形成，並且因此，N型井28b是在P通道FET 20b下面的半導體主體基材21中通過適度摻雜所形成。此外，STI 29是在半導體主體基材21中形成(並且貫穿半導體層23及BOX層22)。P型井28a 遭到STI 29隔離的部分可具有P+摻雜上部區。因此，N型井28b遭到STI 29隔離的部分可具有N+摻雜上部區。
類似於參照第2圖所述的實施例，第3圖所示半導體裝置20的半導體主體基材21有部分可當作前閘極用於N通道FET 20a及P通道FET 20b。上電極24與24'可浮動，或可當作背閘極用於雙操作控制。P型井的隔離部分的源極25、25'與上部P+區、及N型井的隔離部分的上部N+區可連接至接地。操作時，可對部分半導體主體基材21所形成的汲極26、26'及前閘極電極施加3.6V或更大的較高供應電壓。
第4圖根據本發明繪示包含超低臨界電壓FET裝置容許高電壓操作的半導體裝置30。半導體裝置30包含N通道FET 30a及P通道FET 30b。N通道FET 30a及P通道FET 30b是在FDSOI基材上形成，FDSOI基材包含半導體主體基材31、形成於半導體主體基材31上的埋置型氧化物(BOX)層32、及形成於BOX層32上的半導體層33(主動層)。N通道FET 30a及P通道FET 30b可以是延展閘極裝置，其具有延展至第4圖所示區域外側的半導體主體基材31或BOX層32的閘極電極。可如第2圖所示內容所述就SOI基材的不同層件選擇相同材料。尤其是，半導體層33可以是結晶矽層。
N通道FET 30a與P通道FET 30b兩者分別包含上電極34、34'、源極電極35、35'與汲極電極36、36'。上電極34、34'是自半導體層33起通過閘極介電質37、37' 分開。再次地，第2圖所示內容中所述的材料亦可用於第4圖所示的對應層。
N型井38a是在N通道FET 30a下面的半導體主體基材31中通過適度摻雜所形成，並且因此，P型井38b是在P通道FET 30b下面的半導體主體基材31中通過適度摻雜所形成。此外，STI 39是在半導體主體基材31中形成(並且貫穿半導體層33及BOX層32)。N型井38a遭到STI 39隔離的部分可具有N+摻雜上部區。因此，P型井38a遭到STI 39隔離的部分可具有P+摻雜上部區。
類似於參照第2圖所述的實施例，第4圖所示半導體裝置30的半導體主體基材31有部分可當作前閘極用於N通道FET 30a及P通道FET 30b。上電極34與34'可浮動，或可當作背閘極用於雙操作控制。P型井的隔離部分的源極35、35'與上部P+區、及N型井的隔離部分的上部N+區可連接至接地。操作時，可對部分半導體主體基材31所形成的汲極36、36'及閘極電極施加3.6V或更大的較高供應電壓。
在所有上述實施例中，本發明的半導體裝置可與類似的半導體裝置共整合，其中半導體基材不包含閘極電極(未當作閘極電極操作)，反而包含背閘極(當作背電極操作)。在不適用於高電壓操作的這些半導體裝置中，第2圖、3及4所示的上電極14、24、24'、34、34'形成(操作為)閘極電極。特別的是，第2、3及4圖所示的半導體裝置可與類似於第1圖所示的半導體裝置共整合。
結論是，提供一種用以在製造常見低電壓FDSOI FET的程序流程中整合高電壓FTE的措施。對於常見的低電壓FDSOI FET，SOI基材的半導體主體基材可用於反偏壓。這些裝置的閘極電極是在SOI基材上面形成，並且通過閘極介電質與SOI基材的半導體層分開。相反地，高電壓FTE包含當作前閘極電極的部分SOI基材，並且SOI基材上面形成的電極可用於反偏壓。對於高電壓FET，SOI基材的BOX層作用為閘極介電質，並且還將半導體主體基材中包含的閘極電極電隔離。因此，可輕易地將高電壓FET的製造與適用於低電壓操作的常見FDSOI FET的製造程序流程共整合，完全不需要另外的遮罩與沉積步驟。
以上所揭示的特定具體實施例僅屬描述性，正如本發明可用所屬領域技術人員所明顯知道的不同但均等方式予以修改並且實踐而具有本文教示的效益。舉例而言，以上所提出的程序步驟可按照不同順序來進行。再者，如隨附申請專利範圍中所述除外，未意圖限制於本文所示構造或設計的細節。因此，證實可改變或修改以上揭示的特定具體實施例，而且所有此類變體全都視為在本發明的範疇及精神內。要注意的是，本說明書及所附申請專利範圍中如“第一”、“第二”、“第三”或“第四”的類用以說明各個程序或結構的術語，僅當作此些步驟/結構節略參考，並且不必然暗喻此些步驟/結構的進行/形成序列。當然，取決於精准聲稱的措辭，可或可不需要此 些程序的排列順序。因此，本文尋求的保護如所附申請專利範圍中所提。
10‧‧‧電晶體裝置或場效電晶體(FET)裝置
11‧‧‧半導體主體基材
12‧‧‧埋置型氧化物(BOX)層
13‧‧‧半導體層
14‧‧‧上電極
15‧‧‧源極、源極電極、隆起源極區或隆起半導體區
16‧‧‧汲極、汲極電極、隆起汲極區或隆起半導體區
17‧‧‧介電層或閘極介電質
18‧‧‧側壁間隔物
19‧‧‧(前)閘極電極
A、B、C、D‧‧‧接觸

Claims (15)

  1. 一種半導體裝置，其包含：絕緣體上覆矽(SOI)基材，其包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；以及電晶體裝置，其中，該電晶體裝置包含由一部分該半導體主體基材所形成的閘極電極、由一部分該埋置型氧化物層所形成的閘極絕緣層、及形成於一部分該半導體層中的通道區。
  2. 如申請專利範圍第1項所述的半導體裝置，更包含形成於該半導體層上方的隆起源極與汲極區。
  3. 如申請專利範圍第2項所述的半導體裝置，更包含形成於該半導體層上方的上電極、及形成於該上電極的側壁上和該隆起源極與汲極區與該上電極之間的側壁間隔物。
  4. 如申請專利範圍第3項所述的半導體裝置，更包含另一電晶體裝置，其中，該另一電晶體裝置包含形成於該半導體層上方的閘極電極。
  5. 如申請專利範圍第1項所述的半導體裝置，更包含形成於該上電極與該半導體層之間的介電層。
  6. 如申請專利範圍第1項所述的半導體裝置，其中，該埋置型氧化物層具有約20奈米至30奈米的厚度，並且該半導體層具有約5奈米至20奈米的厚度。
  7. 一種半導體裝置，其包含： 絕緣體上覆矽(SOI)基材，其包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物層、以及形成於該埋置型氧化物層上的半導體層；第一電晶體裝置，其包含形成於該半導體層上方的第一閘極電極、及形成於該第一閘極電極與該半導體層之間的第一閘極介電質；以及第二電晶體裝置，其包含形成於該半導體主體基材中的第二閘極電極、及形成於該埋置型氧化物層中的第二閘極介電質。
  8. 如申請專利範圍第7項所述的半導體裝置，更包含形成於該半導體主體基材中的P型井或N型井。
  9. 如申請專利範圍第7項所述的半導體裝置，其中，該第一電晶體裝置更包含形成於該半導體主體基材中的背閘極。
  10. 如申請專利範圍第7項所述的半導體裝置，其中，該第二電晶體裝置更包含形成於該半導體層上方的背閘極。
  11. 如申請專利範圍第7項所述的半導體裝置，其中，該第一電晶體裝置包含形成於該半導體層中的第一通道區，並且該第二電晶體裝置包含形成於該半導體層中的第二通道區。
  12. 一種形成半導體裝置的方法，其包含：提供絕緣體上覆矽(SOI)基材，其包含半導體主體基材、形成於該半導體主體基材上的埋置型氧化物 層、以及形成於該埋置型氧化物層上的半導體層；在該絕緣體上覆矽基材中及上形成第一電晶體裝置，其包含：在該半導體層上形成第一閘極絕緣層；以及在該第一閘極絕緣層上形成第一閘極電極；以及在該絕緣體上覆矽基材中形成第二電晶體裝置，其包含：在該半導體主體基材中形成第二閘極電極；以及在該埋置型氧化物層中形成第二閘極絕緣層。
  13. 如申請專利範圍第12項所述的方法，其中，形成該第一電晶體裝置更包含在該半導體層上方形成該第一電晶體裝置的第一隆起源極與汲極區，以及其中，形成該第二電晶體裝置更包含在該半導體層上方形成該第二電晶體裝置的第二隆起源極與汲極區。
  14. 如申請專利範圍第12項所述的方法，其中，形成該第一電晶體裝置更包含在該半導體層中形成該第一電晶體裝置的第一通道區，以及其中，形成該第二電晶體裝置更包含在該半導體層中形成該第二電晶體裝置的第二通道區。
  15. 如申請專利範圍第12項所述的方法，其中，形成該第二電晶體裝置更包含由如同形成該第一電晶體裝置的 該第一閘極電極所用的材料在該半導體層上方形成背閘極。
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