TW201806054A - Sticking method of reconstituted type wafer - Google Patents
Sticking method of reconstituted type wafer Download PDFInfo
- Publication number
- TW201806054A TW201806054A TW105125762A TW105125762A TW201806054A TW 201806054 A TW201806054 A TW 201806054A TW 105125762 A TW105125762 A TW 105125762A TW 105125762 A TW105125762 A TW 105125762A TW 201806054 A TW201806054 A TW 201806054A
- Authority
- TW
- Taiwan
- Prior art keywords
- carrier
- feature
- wafer
- imaginary line
- positioning
- Prior art date
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明乃是關於一種重組式晶圓的對貼方法,特別是指一種先將晶圓上的晶片分開並將正常的晶片重組成一重組式晶圓,並利用立體封裝堆疊技術將二片重組式晶圓具有晶片的表面相互對貼的方法。 The invention relates to a method for aligning a reconstituted wafer, in particular to first separating a wafer on a wafer and reconstituting a normal wafer into a reconstituted wafer, and reorganizing the two pieces by using a three-dimensional package stacking technology The wafer has a method in which the surfaces of the wafers are opposed to each other.
由於電子技術的發展,為著節省現有電子裝置內部的空間,使電子裝置更為輕薄。電路板上的晶片已朝向立體堆疊的方式,發展出半導體製程的立體堆疊封裝技術。立體疊堆封裝技術亦即使至少二個晶片相互堆疊且電性連接。 Due to the development of electronic technology, in order to save space inside the existing electronic device, the electronic device is made lighter and thinner. The wafer on the circuit board has been oriented in a three-dimensional stacking manner, and a three-dimensional stacked packaging technology of a semiconductor process has been developed. The three-dimensional stack packaging technique also allows at least two wafers to be stacked and electrically connected to each other.
現有半導體技術已經利用立體整合構裝的接合二片晶圓的晶圓(基板)組合件。然而,每一片晶圓可能含有瑕疵的晶片,現有的技術通常是在接合二片晶圓並切割後,再檢查每一立體堆疊的晶片組。此種方式可能使得正常的晶片結合於瑕疵的晶片而形成一瑕疵的晶片組,而浪費正常的晶片。 Existing semiconductor technologies have utilized a three-dimensional integrated package of wafer (substrate) assemblies that bond two wafers. However, each wafer may contain germanium wafers. The prior art typically checks each wafer stack after stacking and cutting. This approach may result in a normal wafer being bonded to the germanium wafer to form a stack of wafers, wasting normal wafers.
本發明所要解決的技術問題,在於提供一種重組式晶圓的對貼方法,先將正常的晶片重組成重組式晶圓後,再堆疊封裝二片重組式晶圓,藉此減少瑕疵的立體堆疊的晶片組,避免浪費正常的晶片,以節省資源。 The technical problem to be solved by the present invention is to provide a method for aligning a reconstituted wafer by first reassembling a normal wafer into a reconstituted wafer, and then stacking and packaging two reconstituted wafers, thereby reducing the three-dimensional stacking of the crucible. The chipset avoids wasting normal wafers to save resources.
為了解決上述技術問題,根據本發明之其中一種方案,提供一種重組式晶圓的對貼方法,包括下列步驟:提供一第一重組晶圓,所述第一重組晶圓具有一第一載板、一第一粘膠層貼附於所述第一載板的一上表面、以及多個檢測後正常的第一晶片依序貼附於所述第一粘膠層;尋找所述第一載板的周邊的辨識特徵,並由所述第一載板的辨識特徵取得所述第一載板的至少一第一特徵定位點;提供一第二重組晶圓,所述第二重組晶圓具有一第二載板、一第二粘膠層貼附於所述第二載板的一上表面、以及多個檢測後正常的第二晶片依序貼附於所述第二粘膠層;尋找所述第二載板的周邊的辨識特徵,並由所述第二載板的辨識特徵取得所述第二載板的至少一第二特徵定位點;以及依所述至少一第一特徵定位點與所述至少一第二特徵定位點相重疊的方式,使所述第一重組晶圓具有所述第一晶片的上表面貼合於所述第二重組晶圓具有所述第二晶片的上表面。 In order to solve the above technical problem, according to one aspect of the present invention, a method for aligning a reconstituted wafer is provided, comprising the steps of: providing a first reconstituted wafer, the first reconstituted wafer having a first carrier a first adhesive layer is attached to an upper surface of the first carrier, and a plurality of first wafers that are normally detected are sequentially attached to the first adhesive layer; An identification feature of the perimeter of the board, and obtaining at least one first feature location point of the first carrier board by the identification feature of the first carrier board; providing a second reconstituted wafer, the second reconstituted wafer having a second carrier, a second adhesive layer attached to an upper surface of the second carrier, and a plurality of second substrates that are normally detected are sequentially attached to the second adhesive layer; An identification feature of the periphery of the second carrier, and at least one second feature location of the second carrier is obtained by the identification feature of the second carrier; and the at least one first feature location The manner of overlapping with the at least one second feature location point The recombinant upper surface of the first wafer having wafer bonded to the second wafer having recombinant upper surface of the second wafer.
本發明具有以下有益效果:本發明將正常的第一晶片、第二晶片分別重組成第一重組晶圓、第二重組晶圓後,再堆疊封裝二片重組式晶圓,藉此減少瑕疵的立體堆疊的晶片組,避免浪費正常的晶片,以節省資源。本發明還能準確地使第一重組晶圓與第二重組晶圓準確的定位對貼,利用第一載板與第二載板的周邊的辨識特徵,分別找出第一特徵定位點與第二特徵定位點,使得第一重組晶圓的第一晶片得以準確地與第二重組晶圓的第二晶片相互對接。 The present invention has the following beneficial effects: the present invention reassembles the normal first wafer and the second wafer into the first reconstituted wafer and the second reconstituted wafer, and then stacks and packages two reconstituted wafers, thereby reducing defects. Stereo-stacked wafer sets avoiding wasting normal wafers to save resources. The invention can also accurately position the first reconstituted wafer and the second recombined wafer accurately, and utilize the identification features of the periphery of the first carrier and the second carrier to respectively find the first feature positioning point and the first The feature points are such that the first wafer of the first reconstituted wafer is accurately docked with the second wafer of the second reconstituted wafer.
為了能更進一步瞭解本發明為達成既定目的所採取之技術、方法及功效,請參閱以下有關本發明之詳細說明、圖式,相信本發明之目的、特徵與特點,當可由此得以深入且具體之瞭解,然而所附圖式與附件僅提供參考與說明用,並非用來對本發明加以限制者。 In order to further understand the technology, method and effect of the present invention in order to achieve the intended purpose, reference should be made to the detailed description and drawings of the present invention. The drawings and the annexed drawings are intended to be illustrative and not to limit the invention.
10‧‧‧晶圓 10‧‧‧ wafer
101‧‧‧辨識特徵 101‧‧‧ Identification features
A11、A12、A13、A14、A26、A61、A76‧‧‧第一晶片 A11, A12, A13, A14, A26, A61, A76‧‧‧ first chip
A0‧‧‧第一特徵 A0‧‧‧ first feature
D‧‧‧固定間距 D‧‧‧Fixed spacing
20‧‧‧第一重組晶片 20‧‧‧First Recombination Wafer
21‧‧‧第一載板 21‧‧‧ first carrier
201‧‧‧辨識特徵 201‧‧‧ Identification features
T1‧‧‧第一粘膠層 T1‧‧‧ first adhesive layer
D1‧‧‧第一直徑假想線 D1‧‧‧first diameter imaginary line
C1‧‧‧第一圓心 C1‧‧‧First Center
L1‧‧‧第一定位假想線 L1‧‧‧First positioning imaginary line
θ‧‧‧固定夾角 Θ‧‧‧fixed angle
P11、P12‧‧‧第一特徵定位點 P11, P12‧‧‧ first feature location
30‧‧‧第二重組晶圓 30‧‧‧Second reconstituted wafer
31‧‧‧第二載板 31‧‧‧Second carrier
301‧‧‧辨識特徵 301‧‧‧ Identification features
B0‧‧‧第二特徵 B0‧‧‧ second feature
C2‧‧‧第二圓心 C2‧‧‧ second center
D2‧‧‧第二直徑假想線 D2‧‧‧Second diameter imaginary line
T2‧‧‧第二粘膠層 T2‧‧‧Second adhesive layer
L2‧‧‧第二定位假想線 L2‧‧‧Second positioning imaginary line
P21、P22‧‧‧第二特徵定位點 P21, P22‧‧‧ second feature location
B11、B13、B15、B16、B61、B62、B63‧‧‧第二晶片 B11, B13, B15, B16, B61, B62, B63‧‧‧ second wafer
G‧‧‧封膠 G‧‧‧ Sealing
圖1為本發明的重組式晶圓的示意圖。 Figure 1 is a schematic illustration of a reconstituted wafer of the present invention.
圖2為本發明的第一重組晶圓的示意圖。 2 is a schematic view of a first reconstituted wafer of the present invention.
圖3為本發明的第二重組晶圓的示意圖。 3 is a schematic view of a second reconstituted wafer of the present invention.
圖4為本發明的第一重組晶圓與第二重組晶圓對貼後的側視圖。 4 is a side view of the first reconstituted wafer and the second reconstituted wafer of the present invention after being pasted.
圖5為本發明的第一晶片與第二圓片對貼後的側視圖。 Figure 5 is a side elevational view of the first wafer of the present invention after being attached to the second wafer.
請參考圖1,為本發明的重組式晶圓的示意圖。本發明提供一種重組式晶圓的對貼方法,其包括下列步驟:首先,提供一第一重組晶圓,第一重組晶圓是由一半導體晶圓廠製成完成的一晶圓10,先剔除瑕疵的晶片,再加以重組。晶圓10的晶片通常都會標記一獨特的序號,以圖1的晶圓10為例,假設第一橫列的晶片依序為A11、A12、A13、A14…。第二橫列的第六個晶片設定為晶片A26,第六橫列的第一個晶片設定為晶片A61。 Please refer to FIG. 1 , which is a schematic diagram of a reconstituted wafer of the present invention. The present invention provides a method for aligning a reconstituted wafer, comprising the steps of: firstly providing a first reconstituted wafer, the first reconstituted wafer being a wafer 10 made by a semiconductor fab, first The defective wafers are removed and reorganized. The wafers of the wafer 10 are usually marked with a unique serial number, taking the wafer 10 of FIG. 1 as an example, assuming that the wafers of the first row are sequentially A11, A12, A13, A14. The sixth wafer of the second row is set to wafer A26, and the first wafer of the sixth row is set to wafer A61.
重組晶圓的流程,先是檢查晶圓10上的每一晶片是否有瑕疵,並加以標上記號,例如圖1中的X記號。圖1中有X記號的晶片A13、A26、A61、及A76。接著將所有的晶片加以切割分開,移除瑕疵的晶片A13、A26、A61、及A76。 The process of reconstituting the wafer first checks whether each wafer on the wafer 10 has defects and marks it, such as the X mark in FIG. In Fig. 1, there are wafers A13, A26, A61, and A76 with X marks. All of the wafers are then cut apart to remove the wafers A13, A26, A61, and A76.
請參閱圖2,為本發明的第一重組晶圓的示意圖。以第一重組晶圓20為例,先是提供一第一載板21,然後將一第一粘膠層T1貼附於所述第一載板21的一上表面。第一粘膠層T1用以暫時性固定晶片,例如可以是半導體晶圓晶粒切割製程中常用的光解膠膜(UV Tape),可以利用紫外光照射後而失去黏性,使晶片容易與光解膠膜分離。接著再將多個檢測後正常的第一晶片,例如第一晶片A11、A12、A14…等,依序貼附於所述第一粘膠層T1。第一 載板21的尺寸可以是等於或小於原先的晶圓10的尺寸,例如六寸或八寸,或更大尺寸。第一載板21並且具有與晶圓10的辨識特徵101相似的結構,例如三角形缺口或平切式缺口。 Please refer to FIG. 2, which is a schematic diagram of a first reconstituted wafer of the present invention. Taking the first reconstituted wafer 20 as an example, a first carrier 21 is first provided, and then a first adhesive layer T1 is attached to an upper surface of the first carrier 21. The first adhesive layer T1 is used for temporarily fixing the wafer. For example, it may be a UV tape which is commonly used in a semiconductor wafer die cutting process, and may be lost after being irradiated with ultraviolet light, so that the wafer is easy to be used. The photolysis film is separated. Then, a plurality of first wafers that are normally detected, for example, first wafers A11, A12, A14, etc., are sequentially attached to the first adhesive layer T1. the first The size of the carrier 21 may be equal to or smaller than the size of the original wafer 10, such as six inches or eight inches, or larger. The first carrier 21 has a similar structure to the identification features 101 of the wafer 10, such as triangular notches or flat cuts.
上述在所述提供第一重組晶片20的步驟還包括下列步驟,其中在貼附所述正常晶片之前,辨識每一所述第一晶片A11、A12、A14的第一特徵A0。第一特徵A0可以是晶片上的線路、或電性接觸點…等。較佳是與另一晶片欲對接的電性接觸點。在貼附所述正常晶片的過程中,設定一固定間距D在二個相鄰的所述第一晶片的所述第一特徵A0之間。亦即,使第一晶片A11的第一特徵A0與相鄰的第一晶片A12的第一特徵A之間的距離是固定間距D。第一晶片A12的第一特徵A0與相鄰的第一晶片A14的第一特徵A之間的距離是固定間距D。藉此,即使晶片在由晶圓切割過程中,每一晶片的寬度略有誤差而沒有完全相等,上述步驟可以減少貼附正常晶片的過程產生誤差。避免晶片對貼時,電性接觸點無法準確對接。 The step of providing the first reconstituted wafer 20 described above further includes the step of identifying the first feature A0 of each of the first wafers A11, A12, A14 prior to attaching the normal wafer. The first feature A0 can be a line on a wafer, or an electrical contact point...etc. Preferably, it is an electrical contact point to be interfaced with another wafer. In the process of attaching the normal wafer, a fixed pitch D is set between the first features A0 of two adjacent first wafers. That is, the distance between the first feature A0 of the first wafer A11 and the first feature A of the adjacent first wafer A12 is a fixed pitch D. The distance between the first feature A0 of the first wafer A12 and the first feature A of the adjacent first wafer A14 is a fixed pitch D. Thereby, even if the wafer has a slight error in the width of each wafer during the wafer cutting process and is not completely equal, the above steps can reduce errors in the process of attaching the normal wafer. When the wafer is pasted, the electrical contacts cannot be accurately docked.
接著,尋找所述第一載板21的周邊的辨識特徵201,並由所述第一載板21的辨識特徵201取得所述第一載板21的至少一第一特徵定位點。 Then, the identification feature 201 of the periphery of the first carrier 21 is searched for, and at least one first feature positioning point of the first carrier 21 is obtained by the identification feature 201 of the first carrier 21 .
依本實施例而言,其中上述取得所述至少一第一特徵定位點的流程包括下列步驟:先由所述第一載板21的所述辨識特徵201取得通過所述第一載板21的第一直徑假想線D1,所述第一直徑假想線D1通過所述第一載板21的第一圓心C1。然後,取得一通過所述第一圓心C1的第一定位假想線L1,所述第一定位假想線L1與所述第一直徑假想線D1相夾一固定夾角θ。最後,取得所述第一定位假想線L1與所述第一載板21的周邊的至少一交叉點作為所述至少一第一特徵定位點。 According to the embodiment, the process of obtaining the at least one first feature positioning point includes the following steps: first obtaining, by the identification feature 201 of the first carrier 21, the first carrier 21 The first diameter imaginary line D1 passes through the first center C1 of the first carrier 21 . Then, a first positioning imaginary line L1 passing through the first center C1 is obtained, and the first positioning imaginary line L1 and the first diameter imaginary line D1 are sandwiched by a fixed angle θ. Finally, at least one intersection of the first positioning imaginary line L1 and the periphery of the first carrier 21 is obtained as the at least one first feature positioning point.
本實施例可以產生二個交叉點,作為二個第一特徵定位點P11、P12。藉此再配合上述第一載板21的所述辨識特徵201,可 以有三個點,可以決定一平面。但是由於本實施例是已限制於在第一載板21的上表面,因此取得一個第一特徵定位點,例如P11或P12,再配合第一載板21的所述辨識特徵201,也可準確的與第二重組晶圓定位堆疊。 This embodiment can generate two intersection points as two first feature positioning points P11, P12. Thereby, the identification feature 201 of the first carrier 21 is further matched. With three points, you can decide a plane. However, since the embodiment is limited to the upper surface of the first carrier 21, obtaining a first feature positioning point, such as P11 or P12, and matching the identification feature 201 of the first carrier 21 can also be accurate. The stack is positioned with the second recombined wafer.
其中所述第一定位假想線L1與所述第一直徑假想線D1相夾的固定夾角小於等於90度。例如可以是45度、或90度。補充說明,其中所述第一定位假想線L1與所述第一直徑假想線D1沿第一方向相夾出所述固定夾角θ。第一方向可以是順時針、或逆時針。在本實施例是沿著逆時針方向。 The fixed angle between the first positioning imaginary line L1 and the first diameter imaginary line D1 is less than or equal to 90 degrees. For example, it can be 45 degrees or 90 degrees. In addition, the first positioning imaginary line L1 and the first diameter imaginary line D1 are sandwiched by the fixed angle θ in the first direction. The first direction can be clockwise or counterclockwise. In this embodiment, it is in a counterclockwise direction.
然而,本發明不限於上述實施例,例如,使得所述第一定位假想線通過第一橫列的第一個所述第一晶片A11的所述第一特徵A0,以取得所述第一定位假想線與所述第一載板21的周邊的交叉點作為所述第一特徵定位點。 However, the present invention is not limited to the above embodiment, for example, such that the first positioning imaginary line passes through the first feature A0 of the first one of the first wafers A11 of the first course to obtain the first positioning. An intersection of the imaginary line and the periphery of the first carrier 21 serves as the first feature positioning point.
請參閱圖3,圖3為本發明的第二重組晶圓的示意圖。類似於上述步驟,提供一第二重組晶圓30。所述第二重組晶圓30具有一第二載板31、一第二粘膠層T2貼附於所述第二載板31的一上表面、以及多個檢測後正常的第二晶片,例如B11、B13、B15、B16、B61、B62、B63依序貼附於所述第二粘膠層31。原則上,第二載板31的尺寸等於第一載板21的尺寸。第二載板31也是具有與晶圓相似的辨識特徵301,例如三角形缺口或平切式缺口。 Please refer to FIG. 3. FIG. 3 is a schematic diagram of a second reconstituted wafer of the present invention. Similar to the above steps, a second reconstituted wafer 30 is provided. The second reconstituted wafer 30 has a second carrier 31, a second adhesive layer T2 attached to an upper surface of the second carrier 31, and a plurality of second wafers that are normally detected, for example B11, B13, B15, B16, B61, B62, and B63 are sequentially attached to the second adhesive layer 31. In principle, the size of the second carrier 31 is equal to the size of the first carrier 21. The second carrier 31 is also an identification feature 301 having a similarity to the wafer, such as a triangular notch or a flat-cut notch.
相似於第一重組晶圓,第二重組晶圓30貼附所述正常晶片之前,辨識每一所述第二晶片B11、B13、B15、B16、B61、B62、B63的第二特徵B0。第二特徵B0可以是晶片上的線路、或電性接觸點…等。較佳是與另一晶片欲對接的電性接觸點。在貼附所述正常晶片的過程中,設定一固定間距D在二個相鄰的所述第二晶片的所述第二特徵B0之間。藉此,使得所述第一晶片的所述第一特徵A0對應電性連接於所述第二晶片的所述第二特徵B0。 Similar to the first reconstituted wafer, the second recombination wafer 30 identifies the second feature B0 of each of the second wafers B11, B13, B15, B16, B61, B62, B63 before attaching the normal wafer. The second feature B0 can be a line on a wafer, or an electrical contact point...etc. Preferably, it is an electrical contact point to be interfaced with another wafer. In the process of attaching the normal wafer, a fixed pitch D is set between the second features B0 of two adjacent second wafers. Thereby, the first feature A0 of the first wafer is electrically connected to the second feature B0 of the second wafer.
接著,尋找所述第二載板31的周邊的辨識特徵301,並由所 述第二載板31的辨識特徵301取得所述第二載板31的至少一第二特徵定位點。 Then, the identification feature 301 of the periphery of the second carrier 31 is searched for, and The identification feature 301 of the second carrier 31 captures at least one second feature location of the second carrier 31.
舉例說明,其中上述取得所述至少一第二特徵定位點的流程還包括下列步驟:先是由所述第二載板31的所述辨識特徵301取得通過所述第二載板31的第二直徑假想線D2,所述第二直徑假想線D2通過所述第二載板31的第二圓心C2。然後,取得一通過所述第二圓心C2的第二定位假想線L2,所述第二定位假想線L2與所述第二直徑假想線D2相夾一固定夾角θ。最後,取得所述第二定位假想線L2與所述第二載板31的周邊的至少一交叉點作為所述至少一第二特徵定位點。 For example, the process of obtaining the at least one second feature positioning point further includes the following steps: first, obtaining the second diameter of the second carrier 31 by the identification feature 301 of the second carrier 31 The imaginary line D2 passes through the second center line C2 of the second carrier 31. Then, a second positioning imaginary line L2 passing through the second center C2 is obtained, and the second positioning imaginary line L2 and the second diameter imaginary line D2 are sandwiched by a fixed angle θ. Finally, at least one intersection of the second positioning imaginary line L2 and the periphery of the second carrier 31 is obtained as the at least one second feature positioning point.
本實施例可以產生二個交叉點,作為二個第二特徵定位點P21、P22。藉此再配合上述第二載板31的所述辨識特徵301,可以有三個點,可以決定一平面。 This embodiment can generate two intersection points as two second feature positioning points P21, P22. Thereby, in combination with the identification feature 301 of the second carrier 31, there may be three points, and a plane may be determined.
其中所述第二定位假想線L2與所述第二直徑假想線D2沿著與第一方向相反的方向相夾出所述固定夾角θ,在本實施例中亦即沿著順時針方向。 The second positioning imaginary line L2 and the second diameter imaginary line D2 are sandwiched by the fixed angle θ in a direction opposite to the first direction, that is, in the clockwise direction in this embodiment.
然而,本發明不限於上述實施例,例如,使得所述第二定位假想線通過第一橫列的最後一個所述第二晶片B63的所述第二特徵B0,以取得所述第二定位假想線與所述第二載板31的周邊的交叉點作為所述第二特徵定位點。藉此可準確的使第一重組晶圓20的第一橫列的第一個所述第一晶片A11與第二重組晶圓30的第一橫列的最後一個所述第二晶片B63。 However, the present invention is not limited to the above embodiment, for example, such that the second positioning imaginary line passes through the second feature B0 of the last one of the second wafers B63 of the first course to obtain the second positioning imaginary The intersection of the line and the periphery of the second carrier 31 serves as the second feature positioning point. Thereby, the first of the first wafer A11 of the first row of the first reconstituted wafer 20 and the last of the second wafers B63 of the first row of the second recombination wafer 30 can be accurately made.
最後,依所述至少一第一特徵定位點(P11或P12)與所述至少一第二特徵定位點(P21或P22)相重疊的方式,使所述第一重組晶圓20具有所述第一晶片的上表面貼合於所述第二重組晶圓30具有所述第二晶片的上表面。結果如圖4所示,圖4為本發明的第一重組晶圓20與第二重組晶圓30對貼後的側視圖。第一重組晶 圓20的第一橫列的第一個所述第一晶片A11與第二重組晶圓30的第一橫列的最後一個所述第二晶片B63形成立體堆疊。 Finally, the first reconstituted wafer 20 has the first portion according to the manner that the at least one first feature positioning point (P11 or P12) overlaps with the at least one second feature positioning point (P21 or P22) An upper surface of a wafer is attached to the second reconstituted wafer 30 having an upper surface of the second wafer. The result is shown in FIG. 4. FIG. 4 is a side view of the first reconstituted wafer 20 and the second reconstituted wafer 30 of the present invention after being pasted. First recombination crystal The first of the first wafers A11 of the first row of the circle 20 and the last of the second wafers B63 of the first row of the second reconstituted wafers 30 form a three-dimensional stack.
本發明的重組式晶圓的對貼方法,還可進一步包括噴膠於所述第一重組晶圓20與所述第二重組晶圓30對貼後之間的縫隙,使得封膠G封住第一重組晶圓20與第二重組晶圓30之間的縫隙,以利於下一製程。 The method for affixing the reconstituted wafer of the present invention may further include spraying a gap between the first reconstituted wafer 20 and the second reconstituted wafer 30, so that the sealant G is sealed. A gap between the first reconstituted wafer 20 and the second reconstituted wafer 30 is facilitated for the next process.
本發明之特點及功能在於,先將正常的第一晶片、第二晶片分別重組成第一重組晶圓20、第二重組晶圓30後,再堆疊封裝二片重組式晶圓,藉此減少瑕疵的立體堆疊的晶片組,避免浪費正常的晶片,以節省資源。本發明還能準確地使第一重組晶圓20與第二重組晶圓30準確的定位對貼,利用第一載板與第二載板的周邊的辨識特徵,分別找出第一特徵定位點與第二特徵定位點,使得第一重組晶圓20的第一晶片得以準確地與第二重組晶圓30的第二晶片相互對接。 The feature and function of the present invention is that the normal first wafer and the second wafer are respectively reconstituted into the first reconstituted wafer 20 and the second reconstituted wafer 30, and then the two reconstituted wafers are stacked and packaged, thereby reducing The three-dimensional stacked chip set avoids wasting normal wafers to save resources. The invention can also accurately position the first reconstituted wafer 20 and the second reconstituted wafer 30 accurately, and utilize the identification features of the periphery of the first carrier and the second carrier to respectively find the first feature positioning point. And the second feature positioning point, such that the first wafer of the first reconstituted wafer 20 is accurately docked with the second wafer of the second reconstituted wafer 30.
以上所述僅為本發明之較佳可行實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
A11、A12、A14‧‧‧第一晶片 A11, A12, A14‧‧‧ first chip
A0‧‧‧第一特徵 A0‧‧‧ first feature
D‧‧‧固定間距 D‧‧‧Fixed spacing
20‧‧‧第一重組晶片 20‧‧‧First Recombination Wafer
21‧‧‧第一載板 21‧‧‧ first carrier
201‧‧‧辨識特徵 201‧‧‧ Identification features
T1‧‧‧第一粘膠層 T1‧‧‧ first adhesive layer
D1‧‧‧第一直徑假想線 D1‧‧‧first diameter imaginary line
C1‧‧‧第一圓心 C1‧‧‧First Center
L1‧‧‧第一定位假想線 L1‧‧‧First positioning imaginary line
θ‧‧‧固定夾角 Θ‧‧‧fixed angle
P11、P12‧‧‧第一特徵定位點 P11, P12‧‧‧ first feature location
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105125762A TWI624894B (en) | 2016-08-12 | 2016-08-12 | Sticking method of reconstituted type wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105125762A TWI624894B (en) | 2016-08-12 | 2016-08-12 | Sticking method of reconstituted type wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201806054A true TW201806054A (en) | 2018-02-16 |
TWI624894B TWI624894B (en) | 2018-05-21 |
Family
ID=62014167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105125762A TWI624894B (en) | 2016-08-12 | 2016-08-12 | Sticking method of reconstituted type wafer |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI624894B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI655694B (en) * | 2018-07-17 | 2019-04-01 | 奇景光電股份有限公司 | Glue sealing apparatus and glue sealing method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11515225B2 (en) | 2020-09-10 | 2022-11-29 | Rockwell Collins, Inc. | Reconstituted wafer including mold material with recessed conductive feature |
US11605570B2 (en) | 2020-09-10 | 2023-03-14 | Rockwell Collins, Inc. | Reconstituted wafer including integrated circuit die mechanically interlocked with mold material |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5065889B2 (en) * | 2005-04-28 | 2012-11-07 | 東レエンジニアリング株式会社 | Image recognition implementation method |
TWI394229B (en) * | 2010-05-19 | 2013-04-21 | Advanced Semiconductor Eng | Method for making die assembly |
-
2016
- 2016-08-12 TW TW105125762A patent/TWI624894B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI655694B (en) * | 2018-07-17 | 2019-04-01 | 奇景光電股份有限公司 | Glue sealing apparatus and glue sealing method |
Also Published As
Publication number | Publication date |
---|---|
TWI624894B (en) | 2018-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100446187C (en) | Semiconductor device and manufacturing method of the same | |
TWI624894B (en) | Sticking method of reconstituted type wafer | |
TWI668815B (en) | Chip package structure and manufacturing method thereof | |
KR20140073446A (en) | Sealing apparatus for organic el, manufacturing apparatus for sealing roll film, and sealing system for organic el | |
JP2012112776A (en) | Inspection method for multilayer-chip device and multilayer-chip device rearrangement unit, and inspection equipment for multilayer-chip device | |
US20230178517A1 (en) | Fan-out package structure | |
WO2021073134A1 (en) | Semiconductor packaging method, semiconductor packaging structure and packaging body | |
CN110034028B (en) | Chip packaging method and chip packaging structure | |
JP2010021485A (en) | Method of manufacturing semiconductor device | |
US7799612B2 (en) | Process applying die attach film to singulated die | |
KR20180119096A (en) | Method for manufacturing inspection device | |
TWI473189B (en) | Method for wafer-level testing diced multi-dice stacked packages | |
US8987905B2 (en) | Semiconductor package and method for manufacturing the same | |
TWI648756B (en) | Dye sensitized solar cell packaging device and method | |
US20150380369A1 (en) | Wafer packaging structure and packaging method | |
TW201304629A (en) | Module for arraying good substrate and method for manufacturing the same | |
TW563212B (en) | Semiconductor package and manufacturing method thereof | |
TW200419746A (en) | Chip scale package and method for marking the same | |
JP2008016604A (en) | Semiconductor element and its manufacturing method | |
JP2007194530A (en) | Apparatus capable of estimating resistance property | |
CN114479705B (en) | Wafer bonding film and method for manufacturing same | |
CN117080095B (en) | Wafer fan-out packaging method and packaging equipment | |
CN109524316B (en) | Semiconductor chip packaging method and carrying disc for semiconductor chip packaging | |
JP7494067B2 (en) | Semiconductor device manufacturing method and semiconductor manufacturing device | |
WO2023130489A1 (en) | Semiconductor structure and manufacturing method therefor |