TW201805474A - Base carrier and apparatus for decreasing self-doping in epitaxial growth - Google Patents

Abstract

The present invention relates to a base carrier and an apparatus for decreasing self-doping in epitaxial growth. The base carrier comprises a mainframe and a supporting rod connecting with the reverse side of the mainframe. A cavity is formed in the mainframe, and a plurality of through holes, connecting with the cavity, are formed on the front side of the mainframe. A vent hole, formed on the supporting rod, runs through the supporting rod and connects with the cavity. Doped atoms released from the backside of a wafer may be expelled through the vent hole, and this decreases the absorbed doped atoms in an epitaxy layer. Utilizing an apparatus with such base carrier for epitaxial growth, the doped atoms expelled through the vent hole may be collected and processed by a fixed exhaust pipe. The pumping force of the fixed exhaust pipe may be controllable with the help of a vacuum tube to decrease the possibility that reaction gas reaches the gap between the wafer and the base carrier, and decrease the deposition of an epitaxy layer on the backside of the wafer.

Description

Base for reducing self-doping and epitaxial equipment

The invention belongs to the field of semiconductor manufacturing and relates to a base and an epitaxial device with reduced self-doping.

Self-doping means that during the epitaxial growth process, the doped atoms in the wafer as the substrate are automatically transferred to the epitaxial layer. Doped atoms from the back of the substrate are released between the edge of the wafer and the base, and flow towards the front of the wafer. These doped atoms are incorporated into the growth deposit, reducing the resistance uniformity of the wafer edge.

US patent US6596095 discloses a method for reducing self-doping. As shown in FIG. 1, it is an epitaxial device used in the patent, which drills a series of through holes in the base and sets a horizontal air flow under the base. Since the diffused doped atoms emerge from the back of the wafer, these doped atoms will enter the through holes in the base and be carried away by the horizontal airflow below the base, so that self-doping is reduced. However, due to the presence of the Venturi effect, the process gas (or reaction gas) will also enter the gap between the base and the wafer under suction, so that an epitaxial layer may also be deposited on the back of the wafer. Among them, the Venturi effect is also called the Venturi effect, a phenomenon named after its discoverer, Italian physicist Giovanni Battista Venturi. This effect is manifested in the phenomenon that the restricted flow passes through the reduced overflow section, and the flow velocity increases, and the flow velocity is inversely proportional to the overflow section. According to Bernoulli's law, it is known that an increase in flow velocity is accompanied by a decrease in fluid pressure, which is a common Venturi phenomenon. In layman's terms, this effect means that a low pressure is generated near a fluid flowing at high speed, which causes adsorption.

Therefore, how to provide a self-doped base and epitaxial equipment to effectively reduce the self-doping of the epitaxial layer on the wafer and avoid the growth of the epitaxial layer on the back of the wafer has become an urgent problem for those skilled in the art. Important technical issues.

In view of the shortcomings of the prior art described above, an object of the present invention is to provide a base and an epitaxial device for reducing self-doping, which are used to improve the problem that self-doping is easily introduced during the epitaxial layer growth process in the prior art.

In order to achieve the above object and other related objects, the present invention provides a self-doped base, including a base body and a support rod connected to the back of the base body, wherein a cavity is provided inside the base body, and the base The front side of the main body is provided with a plurality of through-holes communicating with the cavity, and the support rod is provided with an exhaust gas for exhausting doped atoms released from the back surface of the wafer through the support rod up and down and communicating with the cavity. hole.

In the present invention, optionally, the front surface of the base body is provided with a first circular step for carrying a wafer edge region; optionally, at least three of the through holes are distributed in the first circular step. Optionally, the through holes are uniformly distributed in the first annular step; optionally, the cavity includes at least two pipelines; optionally, the cavity includes an annular pipeline and At least one strip-shaped pipeline; the annular pipeline is in communication with the through-holes distributed in the first annular step; one end of the strip-shaped pipeline is in communication with the annular pipeline and the other end is in communication with the Exhaust holes; optionally, at least one of the through holes is distributed in a central area of the front surface of the base body; optionally, a front surface of the base body is provided with a second annular step for restricting horizontal movement of the wafer.

The invention also provides an epitaxial device, the epitaxial device includes any one of the above-mentioned bases with reduced self-doping. Optionally, the epitaxial device includes a quartz chamber and a reaction gas inlet and a reaction gas exhaust port respectively provided on a pair of opposite sides of the quartz chamber; the self-doped base is provided on the The quartz chamber is connected to a rotating shaft through the support rod, and is rotated by the rotating shaft; the rotating shaft is connected to a fixed exhaust pipe; the fixed exhaust pipe communicates with the exhaust hole, and Dopant atoms released on the back of the collection wafer.

In the present invention, optionally, the rotation shaft is provided with a pipe penetrating the rotation shaft up and down, and one end of the fixed exhaust pipe extends into the pipe to communicate with the exhaust hole; optionally, all The fixed exhaust pipe and the side wall of the pipe are sealed by a magnetic fluid seal; optionally, a receiving tube is connected to the bottom of the quartz chamber; an upper part of the rotation shaft is provided in the receiving tube, and the rotation The shaft and the inner wall of the containing tube are sealed by a magnetic fluid seal; optionally, the rotating shaft is driven to rotate by a rotating motor and a gear.

In the present invention, optionally, the rotating shaft is provided with a pipe which penetrates the rotating shaft up and down and communicates with the exhaust hole, and the top of the fixed exhaust pipe is connected to the bottom of the rotating shaft through a bearing and is connected with the bottom of the rotating shaft. The pipeline is connected; optionally, a receiving tube is connected to the bottom of the quartz chamber; the entire rotating shaft and the upper part of the fixed exhaust pipe are arranged in the receiving tube, and the fixed exhaust pipe is connected to the receiving tube; The inner wall of the tube is sealed by a magnetic fluid seal. Optionally, the rotating shaft is driven to rotate by an active rotating magnet provided outside the receiving cavity and a driven rotating magnet provided on an outer wall of the rotating shaft.

In the present invention, optionally, the fixed exhaust pipe is connected to an exhaust gas processor; optionally, the fixed exhaust pipe is connected to a vacuum pipe; optionally, the epitaxial device further includes an enclosure surrounding the quartz A protective cover for the chamber; optionally, a heating lamp is provided between the quartz chamber and the protective cover; optionally, a pyrometer is provided in the protective cover, and at least one pyrometer is located in the Above the outside of the quartz chamber, at least one pyrometer is located below the outside of the quartz chamber.

As described above, the self-doped base and epitaxial device of the present invention have the following beneficial effects: The self-doped base of the present invention is provided with a through hole in the front, a cavity in the inside, and an exhaust hole in the back. The dopant atoms released on the back of the wafer can be discharged through the vent hole to prevent the dopant atoms from being absorbed by the epitaxial layer. In the epitaxial device using the self-doped base, the doped atoms discharged from the exhaust holes can be collected by a fixed exhaust pipe and processed by an exhaust processor. The fixed exhaust pipe is connected to a vacuum pipe, and the pumping force is controllable, which can reduce the gap between the reaction gas entering the wafer and the base, and avoid the epitaxial layer deposition on the back of the wafer.

101‧‧‧base body

102‧‧‧ support bar

103‧‧‧ Cavity

104‧‧‧through hole

105‧‧‧Vent hole

106‧‧‧The first circular step

107‧‧‧Second circular steps

108‧‧‧Circular pipeline

109‧‧‧Bar Pipe

110‧‧‧Quartz chamber

111‧‧‧Reaction gas inlet

112‧‧‧Reaction gas exhaust port

113‧‧‧rotation axis

114‧‧‧ fixed exhaust pipe

115‧‧‧pipe

116, 118, 122‧‧‧ Magnetic fluid seals

117‧‧‧ Containment tube

119‧‧‧Rotary motor

120‧‧‧ Gear

121‧‧‧bearing

123‧‧‧active rotating magnet

124‧‧‧Driven Rotary Magnet

125‧‧‧ protective cover

126‧‧‧Heating tube

127‧‧‧ pyrometer

128‧‧‧ wafer

The accompanying drawings of the present invention are as follows: FIG. 1 is a schematic structural diagram of an epitaxial device in the prior art.

FIG. 2 is a cross-sectional view of a three-dimensional structure of a self-doped reduced base of the present invention.

FIG. 3 shows a top view of a self-doped reduced base of the present invention.

Fig. 4 is a sectional view taken along the line A-A of the structure shown in Fig. 3.

FIG. 5 is a top view of the internal cavity of the self-doped reduced base of the present invention.

FIG. 6 is a schematic structural diagram of an epitaxial device according to a second embodiment of the present invention.

FIG. 7 is a schematic diagram of a gas flow direction in the structure shown in FIG. 6.

FIG. 8 is a schematic structural diagram of an epitaxial device according to a third embodiment of the present invention.

FIG. 9 is a schematic diagram of a gas flow direction in the structure shown in FIG. 8.

The following describes the embodiments of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through different specific implementations, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

See Figures 2 to 9. It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of the present invention in a schematic manner, and only the components related to the present invention are shown in the drawings, rather than the number, shape and For size drawing, the type, quantity, and proportion of each component can be changed at will in actual implementation, and the component layout type may be more complicated.

Example one

The present invention provides a self-doping reducing base, please refer to FIG. 2 to FIG. 4, wherein FIG. 2 is a cross-sectional view of the three-dimensional structure of the self-doping reducing base, and FIG. 3 shows the self-doping reducing base. A top view of the base, FIG. 4 is a cross-sectional view taken along the line AA of the structure shown in FIG. 3, The self-doping reducing base includes a base body 101 and a support rod 102 connected to the back of the base body 101. Among them: a cavity 103 is provided inside the base body 101; The cavity 103 communicates with a through hole 104; the support rod 102 is provided with an exhaust hole that penetrates the support rod 102 up and down and communicates with the cavity 103 for discharging doped atoms released from the back of the wafer. 105. Specifically, a first annular step 106 and a second annular step 107 are provided on the front surface of the base body 101. The first annular step 106 is used to carry the wafer edge region, and the second annular step 107 is used to restrict the horizontal movement of the wafer.

In addition, the first annular step 106 forms a groove in the middle area of the front surface of the base body 101. The existence of this groove can make the base body 101 and the back surface of the wafer better in the high temperature epitaxial process. fit. Because the wafer is deformed at high temperatures and the edges are warped, the first annular step 106 can better fit the edge of the warped wafer, and the middle part of the wafer just enters the groove.

Since the self-doping of the epitaxial layer is mainly caused by the doped atoms released from the wafer edge (due to the warpage of the wafer, the wafer edge is more difficult to adhere to the base, resulting in the existence of voids). Therefore, in the present invention, The through holes 104 are mainly or entirely distributed in the first annular step 106. As an example, at least three (preferably 8-16) the through-holes 104 are distributed in the first annular step 106, and at least one of the through-holes 104 is distributed in the central area of the front surface of the base body 101 . Among them, FIG. 3 shows a situation in which eight through holes 104 are evenly distributed in the first annular step 106, and one through hole 104 is distributed in a central area on the front surface of the base body 101.

Specifically, the cavity 103 may be disc-shaped or include at least two pipes. As an example, the cavity 103 includes an annular pipeline 108 and at least one strip pipeline 109; the annular pipeline 108 communicates with the through holes 104 distributed in the first annular step 106; One end of the strip-shaped pipe 109 communicates with the annular pipe 108 and the other end communicates with the exhaust hole 105. FIG. 5 shows a case where the cavity 103 includes an annular pipe 108 and eight strip pipes 109. In this embodiment, the strip-shaped pipeline 109 is linear. In other embodiments, the strip-shaped pipeline 109 may also be curved or polygonal, etc., and the protection scope of the present invention should not be excessively limited here. .

The self-doping-reducing base of the present invention is provided with a through hole on the front, a cavity inside, and an exhaust hole on the back, so that the doped atoms released on the back of the wafer can be discharged through the exhaust holes to prevent doped atoms Absorbed by the epitaxial layer.

Example two

The present invention provides an epitaxial device. The epitaxial device includes a self-doped base as described in the first embodiment.

Specifically, please refer to FIG. 6, which is a schematic structural diagram of the epitaxial device, including a quartz chamber 110 and a reaction gas inlet 111 and a reaction gas exhaust port respectively provided on a pair of opposite sides of the quartz chamber 110. 112; the base for reducing self-doping is provided in the quartz chamber 110, and is connected to a rotation shaft 113 through the support rod 102, and is rotated by the rotation shaft 113; the rotation shaft 113 It is connected to a fixed exhaust pipe 114; the fixed exhaust pipe 114 communicates with the exhaust hole 105 and is used to collect the doped atoms released from the back surface of the wafer 128.

In this embodiment, a pipe 115 is provided in the rotating shaft 113 to penetrate the rotating shaft 113 up and down. One end of the fixed exhaust pipe 114 extends into the pipe 115 and communicates with the exhaust hole 105.

Specifically, the fixed exhaust pipe 114 and the side wall of the pipe 115 are sealed by a seal. In this embodiment, the seal is preferably a magnetic fluid seal 116. Among them, the magnetic fluid sealing technology is developed based on the magnetic fluid. When the magnetic fluid is injected into the gap of the magnetic field, it can fill the entire gap and form a "liquid O-ring seal". In the present invention, a magnetic fluid seal is used to ensure that the fixed exhaust pipe 114 remains fixed when the rotating shaft 113 rotates.

As an example, the rotation shaft 113 is driven to rotate by a rotation motor 119 and a gear 120. The rotation shaft 113 is in contact with the support rod 102 and drives the base to rotate by friction. A support plate (not shown) may be further provided between the rotation shaft 113 and the support rod 102 to better support the base.

Specifically, a receiving tube 117 is connected to the bottom of the quartz chamber 110; an upper portion of the rotating shaft 113 is provided in the receiving tube 117, and the rotating shaft 113 and the receiving tube The inner walls of 117 are sealed by 0 seals. In this embodiment, the rotation shaft 113 and the inner wall of the receiving tube 117 are preferably sealed with a magnetic fluid seal 118 so as not to affect the rotation of the rotation shaft 113.

Specifically, the fixed exhaust pipe 114 is also connected to an exhaust gas processor, and a vacuum pipe may be connected between the fixed exhaust pipe 114 and the exhaust gas processor. The exhaust gas processor may adopt a wet scrubber, which can dissolve the exhaust gas and facilitate the processing. The fixed exhaust pipe 114 is connected to a vacuum pipe, and the pumping force is controllable, which can reduce the gap between the reaction gas entering the wafer and the base, and avoid the epitaxial layer deposition on the back of the wafer.

Further, the epitaxial device further includes a protective cover 125 surrounding the quartz chamber 110. A heating lamp tube 126 is provided between the quartz chamber 110 and the protective cover 125 to heat the wafer 128 to a temperature required by the process. The heating lamp tube 126 may be a halogen lamp tube. The upper and lower sets of heating lamps can be staggered at 90 degrees to ensure the temperature uniformity of the wafer. A pyrometer 127 is provided in the protective cover 125, and at least one pyrometer is located above the outside of the quartz chamber for sensing the temperature of the front surface of the wafer 128. At least one pyrometer is located below the outside of the quartz chamber , For sensing the temperature of the back surface of the wafer 128.

Please refer to FIG. 7, wherein a hollow arrow shows a gas flow direction of an epitaxial device when an epitaxial layer is grown, wherein a reactive gas enters the quartz chamber 110 through the reactive gas inlet 111 and is an epitaxial layer. The source gas is provided for growth, and excess reaction gas after the reaction is exhausted through the reaction gas tail gas port 112. During the epitaxial growth process, the doped atoms released at the high temperature of the back surface of the wafer enter the cavity 103 through the through holes 104 distributed on the front surface of the reduced self-doped base. It further enters the fixed exhaust pipe 114 through the exhaust hole 105 and is discharged.

The epitaxial device of the present invention adopts the reduced self-doping base, and the doped atoms discharged from the exhaust holes can be collected by the fixed exhaust pipe and processed by the exhaust processor. The fixed exhaust pipe is connected to a vacuum pipe, and the pumping force is controllable, which can reduce the gap between the reaction gas entering the wafer and the base, and avoid the epitaxial layer deposition on the back of the wafer.

Example three

The invention provides an epitaxial device. The epitaxial device includes the first embodiment. Reduced self-doped pedestal as described.

Specifically, please refer to FIG. 8, which is a schematic structural diagram of the epitaxial device, including a quartz chamber 110 and a reaction gas inlet 111 and a reaction gas exhaust port respectively provided on a pair of opposite sides of the quartz chamber 110. 112; the base for reducing self-doping is provided in the quartz chamber 110, and is connected to a rotation shaft 113 through the support rod 102, and is rotated by the rotation shaft 113; the rotation shaft 113 It is connected to a fixed exhaust pipe 114; the fixed exhaust pipe 114 communicates with the exhaust hole 105 and is used to collect the doped atoms released from the back surface of the wafer 128.

In this embodiment, the rotation shaft 113 is provided with a pipe 115 penetrating the rotation shaft 113 up and down. The top of the fixed exhaust pipe 114 is connected to the bottom of the rotation shaft 113 through a bearing 121 and communicates with the pipe 115. When the rotating shaft 113 rotates, the fixed exhaust pipe 114 remains fixed.

As an example, the rotating shaft 113 is driven to rotate by a driving rotating magnet 123 provided outside the receiving cavity 117 and a driven rotating magnet 124 provided on an outer wall of the rotating shaft 113. The rotation shaft 113 is in contact with the support rod 102 and drives the base to rotate by friction. A support plate (not shown) may be further provided between the rotation shaft 113 and the support rod 102 to better support the base.

Specifically, a receiving tube 117 is connected to the bottom of the quartz chamber 110; the entire rotating shaft 113 and the upper part of the fixed exhaust pipe 114 are disposed in the receiving tube 117, and the fixed exhaust pipe 114 and the receiving tube The inner walls of the tubes 117 are sealed by a magnetic fluid seal 122.

Compared with the first embodiment, it is necessary to provide a magnetic fluid seal between the fixed exhaust pipe 114 and the side wall of the pipe 115 and between the rotating shaft 113 and the inner wall of the receiving pipe 117. In this embodiment, only a magnetic fluid seal is provided. A magnetic fluid seal is needed between the rotating shaft 113 and the inner wall of the receiving tube 117, and the solution is simpler.

Specifically, the fixed exhaust pipe 114 is also connected to an exhaust gas processor, and a vacuum pipe may be connected between the fixed exhaust pipe 114 and the exhaust gas processor. The exhaust gas processor may adopt a wet scrubber, which can dissolve the exhaust gas and facilitate the processing. The fixed exhaust pipe 114 is connected to a vacuum pipe, and the pumping force is controllable, which can reduce the gap between the reaction gas entering the wafer and the base, and avoid No epitaxial layer deposition on the back of the wafer.

Further, the epitaxial device further includes a protective cover 125 surrounding the quartz chamber 110. A heating lamp tube 126 is provided between the quartz chamber 110 and the protective cover 125 to heat the wafer 128 to a temperature required by the process. The heating lamp tube 126 may be a halogen lamp tube. The upper and lower sets of heating lamps can be staggered at 90 degrees to ensure the temperature uniformity of the wafer. A pyrometer 127 is provided in the protective cover 125, and at least one pyrometer is located above the outside of the quartz chamber for sensing the temperature of the front surface of the wafer 128. At least one pyrometer is located below the outside of the quartz chamber , For sensing the temperature of the back surface of the wafer 128.

Please refer to FIG. 9, wherein a hollow arrow shows a gas flow direction of an epitaxial device when an epitaxial layer is grown, wherein a reactive gas enters the quartz chamber 110 through the reactive gas inlet 111 and is an epitaxial layer. The source gas is provided for growth, and excess reaction gas after the reaction is exhausted through the reaction gas tail gas port 112. During the epitaxial growth process, the doped atoms released at the high temperature of the back surface of the wafer enter the cavity 103 through the through holes 104 distributed on the front surface of the reduced self-doped base. It further enters the fixed exhaust pipe 114 through the exhaust hole 105 and is discharged.

The epitaxial device of the present invention adopts the reduced self-doping base, and the doped atoms discharged from the exhaust holes can be collected by the fixed exhaust pipe and processed by the exhaust processor. The fixed exhaust pipe is connected to a vacuum pipe, and the pumping force is controllable, which can reduce the gap between the reaction gas entering the wafer and the base, and avoid the epitaxial layer deposition on the back of the wafer.

In summary, the self-doping-reducing base of the present invention is provided with a through hole on the front, a cavity inside, and an exhaust hole on the back, so that the doped atoms released on the back of the wafer can be discharged through the exhaust hole. To prevent doped atoms from being absorbed by the epitaxial layer. In the epitaxial device using the self-doped base, the doped atoms discharged from the exhaust holes can be collected by a fixed exhaust pipe and processed by an exhaust processor. The fixed exhaust pipe is connected to a vacuum pipe, and the pumping force is controllable, which can reduce the gap between the reaction gas entering the wafer and the base, and avoid the epitaxial layer deposition on the back of the wafer. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above-mentioned embodiments merely illustrate the principle of the present invention and its effects, but are not intended to limit the present invention. Anyone familiar with this technology can work without departing from the spirit and scope of the present invention. Next, the above embodiments are modified or changed. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field to which they belong without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

101‧‧‧base body

102‧‧‧ support bar

103‧‧‧ Cavity

104‧‧‧through hole

105‧‧‧Vent hole

106‧‧‧The first circular step

107‧‧‧Second circular steps

Claims (22)

A base for reducing self-doping, comprising: a base body; and a support rod connected to the back of the base body; wherein a cavity is provided inside the base body, and a plurality of front sides of the base body are provided in communication with the cavity. A through hole is provided in the support rod, and an exhaust hole is provided in the support rod to penetrate the support rod up and down and communicate with the cavity for discharging doped atoms released from the back surface of a wafer. The self-doping-reducing base according to item 1 of the scope of the patent application, wherein a front surface of the base body is provided with a first annular step for carrying a wafer edge region. According to the self-doping-reduced base according to item 2 of the patent application scope, at least three of the through holes are distributed in the first annular step. According to claim 3 of the scope of the patent application, the self-doped base is reduced, wherein the through holes are uniformly distributed in the first annular step. The self-doping-reducing base according to item 3 of the patent application scope, wherein the cavity includes at least two pipes. The self-doping-reducing base according to item 5 of the scope of the patent application, wherein the cavity includes an annular pipeline and at least one strip pipeline, and the annular pipeline and the The through hole communicates, one end of the strip-shaped pipe communicates with the annular pipe, and the other end communicates with the exhaust hole. According to the reduced self-doped base according to item 1 of the patent application scope, at least one of the through holes is distributed in a central region on the front surface of the base body. The self-doping-reducing base according to item 1 of the scope of the patent application, wherein a front surface of the base body is provided with a second circular step for restricting horizontal movement of the wafer. An epitaxial device includes a self-doping-reducing base as described in any one of claims 1-8 of the scope of patent application. The epitaxial device according to item 9 of the scope of the patent application, wherein the epitaxial device includes a quartz chamber and a reaction gas inlet and a reaction gas exhaust port respectively provided on a pair of opposite sides of the quartz chamber. The base for reducing self-doping is located in the quartz cavity, and is connected to a rotating shaft through the support rod, and is rotated by the rotating shaft; the rotating shaft is connected to a fixed exhaust pipe, and the fixed exhaust pipe communicates The vent hole is used to collect doped atoms released from the back surface of the wafer. The epitaxial device according to item 10 of the scope of the patent application, wherein the rotary shaft is provided with a pipe penetrating the rotary shaft up and down, and one end of the fixed exhaust pipe extends into the pipe to communicate with the exhaust hole. The epitaxial device according to item 11 of the scope of patent application, wherein the fixed exhaust pipe and the side wall of the pipe are sealed by a magnetic fluid seal. The epitaxial device according to item 11 of the scope of the patent application, wherein a receiving tube is connected to the bottom of the quartz chamber, an upper part of the rotating shaft is disposed in the receiving tube, and the rotating shaft passes through the inner wall of the receiving tube. A magnetic fluid seal seals. The epitaxy device according to item 11 of the scope of patent application, wherein the rotating shaft is rotated by a rotation A rotary motor and a gear drive the rotation. The epitaxial device according to item 10 of the scope of the patent application, wherein the rotating shaft is provided with a pipe penetrating the rotating shaft up and down and communicating with the exhaust hole; Connect and communicate with the pipe. The epitaxial device according to item 15 of the scope of the patent application, wherein a receiving tube is connected to the bottom of the quartz chamber, the entire rotating shaft and the upper part of the fixed exhaust pipe are disposed in the receiving tube, and the fixed exhaust pipe and the The inner walls of the containing tubes are sealed by a magnetic fluid seal. The epitaxial device according to item 15 of the scope of patent application, wherein the rotating shaft is driven to rotate by an active rotating magnet provided outside the receiving cavity and a compliant rotating magnet provided on an outer wall of the rotating shaft. The epitaxial device according to item 10 of the scope of the patent application, wherein the fixed exhaust pipe is connected to an exhaust gas processor. The epitaxial device according to item 10 of the scope of the patent application, wherein the fixed exhaust pipe is connected to a vacuum pipe. The epitaxial device according to item 10 of the patent application scope, wherein the epitaxial device further includes a protective cover surrounding the quartz chamber. The epitaxial device according to item 20 of the scope of the patent application, wherein a heating lamp is provided between the quartz chamber and the protective cover. The epitaxial device according to item 20 of the scope of patent application, wherein the protective cover is provided with a plurality of Pyrometers, and at least one pyrometer is located above the outside of the quartz chamber, and at least one pyrometer is located below the outside of the quartz chamber.