TW201804564A - Electrostatic chuck - Google Patents

Abstract

Provided is an electrostatic chuck which is provided with a ceramic dielectric substrate, a base plate which is arranged at a distance from the ceramic dielectric substrate and supports the ceramic dielectric substrate, and a heater plate which is arranged between the ceramic dielectric substrate and the base plate. The heater plate comprises: first and second supporting plates which are arranged between the ceramic dielectric substrate and the base plate; first and second resin layers which are arranged between the first supporting plate and the second supporting plate; a resin part which is arranged between the first resin layer and the second resin layer; a heater element which is arranged between the first resin layer and the second resin layer, while having a first conductive part, and which generates heat when an electric current is supplied thereto; and a first space which is defined by a first lateral end part of the first conductive part in the in-plane direction, the first resin layer, the second resin layer and the resin part.

Description

Electrostatic chuck

Aspects of the present invention generally relate to electrostatic chucks.

In a plasma processing chamber, such as etching, CVD (Chemical Vapor Deposition), sputtering, ion implantation, ashing, etc. The electrostatic chuck is used as a means for holding and holding a processing object such as a semiconductor wafer or a glass substrate. An electrostatic chuck is a method in which electrostatic adsorption power is applied to a built-in electrode, and a substrate such as a silicon wafer is adsorbed by the electrostatic force.

In a substrate processing apparatus having an electrostatic chuck, temperature control of a wafer is required in order to improve yield and quality (for example, to improve processing accuracy of a wafer). Electrostatic chucks require temperature control of, for example, two types of wafers. One is the performance (temperature uniformity) for making the temperature distribution in the wafer surface uniform. The other is the performance of bringing the wafer to a predetermined temperature in a short time. For example, heating performance (heating rate) by a heater is required. The temperature rise rate is related to the tact time when processing the wafer, and therefore affects throughput. In addition, the electrostatic chuck may be required to intentionally distinguish the temperature performance (temperature controllability) in the wafer surface.

As a method for controlling the temperature of a wafer, a method using an electrostatic chuck with a built-in heater (heating body) or a cooling plate is known. Generally, there is a trade-off relationship between temperature uniformity and temperature controllability. At the same time, the reliability, especially the withstand voltage characteristic of the heater is required in the electrostatic chuck.

In a wafer processing process, an RF (Radio Frequency) voltage (radio frequency voltage) (high frequency voltage) is applied. When an RF voltage is applied, a general heater is affected by high frequency and generates heat. As a result, the temperature of the wafer is affected. When an RF voltage is applied, a leakage current flows to the device side. Therefore, a mechanism such as a filter is required on the device side.

In processes such as plasma etching equipment, various types of plasmas are irradiated to the wafer with various intensities and various distributions. In this case, controlling the temperature of the wafer to a temperature suitable for the process (temperature uniformity and temperature controllability) is required. In addition, in order to improve productivity, it is required to bring the temperature of the wafer to a predetermined temperature in a short time. There are thermal, electrical, and mechanical loads on electrostatic chucks due to rapid temperature changes, heat input, and application of high-frequency voltages. Electrostatic chucks are required to have high reliability (especially withstand voltage and subsequent reliability) for such loads. Attempts to meet such requirements have been made by, for example, controlling the temperature of a heater built into an electrostatic chuck. But meeting these requirements at the same time is difficult.

[Patent Document 1]: Japanese Patent Application Publication No. 2010-40644

The present invention has been made based on the recognition of such a subject, and an object thereof is to provide an electrostatic chuck with high reliability that can withstand heat, electricity, and mechanical loads.

The first invention is an electrostatic chuck, comprising: a ceramic dielectric substrate on which a processing object is placed; and a base plate disposed at a position separated from the ceramic dielectric substrate in a lamination direction, Supporting the ceramic dielectric substrate; and a heater plate disposed between the ceramic dielectric substrate and the bottom plate, the heating plate having a first supporting plate disposed on the ceramic dielectric substrate And the bottom plate include metal; a second support plate is disposed between the first support plate and the bottom plate and includes metal; a first resin layer is disposed between the first support plate and the second support plate Between; the second resin layer disposed between the first resin layer and the second support plate; the resin portion disposed between the first resin layer and the second resin layer; a heater element (heater element), which is disposed between the first resin layer and the second resin layer, and has a first conductive portion that is conductive with the first conductive portion in an in-plane direction perpendicular to the lamination direction. section The second conductive portion generates heat by flowing a current; and the first space portion uses a first side end portion in the in-plane direction of the first conductive portion and the first resin layer and the second resin layer. Divided from the resin portion, the first resin layer is in contact with the second resin layer through the resin portion between the first conductive portion and the second conductive portion.

According to this electrostatic chuck, a first space portion (gap) is provided at an end portion of the first conductive portion of the heater element. Even if the heater element is thermally expanded, the first conductive portion can be deformed so as to fill the first space portion. Therefore, when the heater element is deformed by thermal expansion, the stress applied to the first resin layer and the second resin layer can be reduced. Therefore, peeling of the heater element from the first resin layer and peeling of the heater element from the second resin layer can be suppressed. Therefore, resistance to a load is high, and reliability can be improved. It is possible to suppress the temperature change of the processing object due to peeling.

A second invention is an electrostatic chuck, wherein in the first invention, the first conductive portion has a second side end portion separated from the first side end portion in the in-plane direction, and the heating plate has at least A second space portion divided by the second side end portion, the first resin layer, and the second resin layer.

According to this electrostatic chuck, a second space portion (gap) is provided at an end portion of the first conductive portion of the heater element. Even if the heater element is thermally expanded, the first conductive portion can be deformed so as to fill the second space portion. Therefore, when the heater element is deformed by thermal expansion, the stress applied to the first resin layer and the second resin layer can be reduced. Therefore, peeling of the heater element from the first resin layer and peeling of the heater element from the second resin layer can be suppressed. It is possible to suppress the temperature change of the processing object due to peeling.

The third invention is an electrostatic chuck, characterized in that in the first invention or the second invention, the length of the first space portion in the lamination direction is equal to or less than the length of the first conductive portion in the lamination direction. .

According to this electrostatic chuck, even if the heater element is deformed by thermal expansion, the space portion is filled, so that the stress applied to the first resin layer and the second resin layer can be reduced. Therefore, peeling of the heater element from the first resin layer and peeling of the heater element from the second resin layer can be suppressed. It is possible to suppress the temperature change of the processing object due to peeling.

The fourth invention is an electrostatic chuck, wherein in any one of the first to third inventions, the first resin layer is between the first conductive portion and the resin portion, and the second resin. Layer separation.

According to this electrostatic chuck, the space between the first resin layer and the second resin layer does not become too narrow (no minima). Accordingly, when the heater element is deformed, the stress applied to the first resin layer and the second resin layer is easily reduced.

A fifth invention is an electrostatic chuck characterized in that, in any one of the first to fourth inventions, the shape of the first space portion has four vertices in a cross section parallel to the lamination direction.

According to this electrostatic chuck, the space between the first resin layer and the second resin layer does not become too narrow (no minima). Accordingly, when the heater element is deformed, the stress applied to the first resin layer and the second resin layer is easily reduced.

A sixth invention is an electrostatic chuck characterized in that in any one of the first to fifth inventions, the first support plate is electrically connected to the second support plate.

According to this electrostatic chuck, high frequency can be isolated, and the heater element can be prevented from generating heat due to the influence of high frequency. Accordingly, it is possible to suppress the heater element from generating heat to an abnormal temperature. In addition, the resistance of the heating plate can be suppressed.

A seventh invention is an electrostatic chuck characterized in that in any one of the first to sixth inventions, an area of a region where the first support plate and the second support plate are joined is larger than that of the first support plate The area of the top surface is narrower than the area of the bottom surface of the second support plate.

According to this electrostatic chuck, high frequency can be isolated, and the heater element can be prevented from generating heat due to the influence of high frequency. Accordingly, it is possible to suppress the heater element from generating heat to an abnormal temperature. In addition, the resistance of the heating plate can be suppressed.

An eighth invention is an electrostatic chuck, wherein in any one of the first to seventh inventions, the resin portion includes a material different from a material of the first resin layer.

According to this electrostatic chuck, the heat conduction and / or heat capacity in the heating plate can be controlled by the resin portion. According to this, it is possible to coexist heat uniformity and thermal conductivity.

A ninth invention is an electrostatic chuck characterized in that in any one of the first to eighth inventions, the thickness of the first resin layer is equal to or less than the thickness of the first conductive portion.

According to this electrostatic chuck, it is possible to prevent the first resin layer from being separated from the first conductive portion in the upper portion of the first conductive portion. Since the adhesiveness between the heater element and the resin layer can be improved, the uniformity of heat and withstand voltage characteristics as designed can be achieved. Further, since the unevenness is formed on the top surface of the first support plate by ensuring the adhesion between the heater element and the resin layer, the distance between the heater element and the object to be processed can be shortened. This makes it possible to increase the speed of increasing the temperature of the object to be processed. Therefore, it is possible to coexist the [heating performance (heating rate) of the heater], [temperature uniformity], and [withstand voltage reliability].

A tenth invention is an electrostatic chuck characterized in that in any one of the first to ninth inventions, the first space portion includes a central portion in the in-plane direction and a middle portion in the in-plane direction. In the end portion, a width of the central portion in the lamination direction is narrower than a width of the end portion in the lamination direction.

According to this electrostatic chuck, when the heater element is deformed due to thermal expansion, it is easier to reduce the stress applied to the first resin layer and the second resin layer.

An eleventh invention is an electrostatic chuck, characterized in that in any one of the first to tenth inventions, the length of the top surface of the first conductive portion in the in-plane direction is the same as that of the first The length of the bottom surface of the conductive portion in the in-plane direction is different.

According to this electrostatic chuck, when the heater element is deformed by thermal expansion, the stress applied to the first resin layer and the second resin layer can be reduced. Therefore, peeling of the heater element from the first resin layer and peeling of the heater element from the second resin layer can be suppressed. It is possible to suppress the temperature change of the processing object due to peeling.

A twelfth invention is an electrostatic chuck, characterized in that in the eleventh invention, the length of the bottom surface of the first conductive portion along the in-plane direction is longer than the length of the top surface of the first conductive portion along the foregoing The aforementioned length in the in-plane direction is long.

The temperature below the heater element is lower than the temperature above the heater element, and uneven heat distribution may occur in the vertical direction. According to this electrostatic chuck, such uneven heat distribution in the vertical direction can be suppressed.

A thirteenth invention is an electrostatic chuck, characterized in that in the eleventh invention, the length along the in-plane direction of the top surface of the first conductive portion is longer than the length along the bottom surface of the first conductive portion. The aforementioned length in the in-plane direction is long.

According to this electrostatic chuck, since the top surface of the heater element is long, it is possible to easily heat the upper side of the heater element on which the processing target is arranged. Furthermore, since the bottom surface of the heater element is relatively short, the lower side of the heater element can be easily cooled. According to this, temperature traceability (ramp rate) can be improved.

A fourteenth invention is an electrostatic chuck characterized in that in any one of the first to thirteenth inventions, in a cross section parallel to the lamination direction, a side surface of the first conductive portion is curved. .

According to this electrostatic chuck, since the side surface is a curved surface, when the heater element is deformed, it is easier to suppress the stress applied to the first resin layer and the second resin layer.

A fifteenth invention is an electrostatic chuck, characterized in that in any one of the first to fourteenth inventions, an angle between a top surface of the first conductive portion and a side surface of the first conductive portion The angle between the bottom surface of the first conductive portion and the side surface is different from that.

According to this electrostatic chuck, the relaxation of the stress applied to the resin layer due to the deformation of the heater due to thermal expansion can reduce the peeling of the resin layer close to the heater element, and coexist with the characteristics of heat of uniformity or temperature tracking.

A sixteenth invention is an electrostatic chuck, characterized in that, in any one of the first to fifteenth inventions, a side surface of the first conductive portion is higher than a top surface of the first conductive portion and the first At least one of the bottom surfaces of the conductive portion is rough.

According to this electrostatic chuck, since the side surface is rougher than at least one of the top surface and the bottom surface of the conductive portion, the heat diffusion from the side surface becomes better, and the heat characteristics such as the soaking property and the temperature tracking property can be improved.

A seventeenth invention is an electrostatic chuck, characterized in that in any one of the first to sixteenth inventions, the heater element has a strip-shaped heater electrode, and the heater electrode is provided in a plurality of The zones are arranged in a state independent of each other.

According to this electrostatic chuck, since the heater electrodes are arranged in a state independent of each other in a plurality of areas, the temperature in the plane of the processing object can be controlled independently for each area. This allows the temperature in the plane of the processing object to be intentionally distinguished.

An eighteenth invention is an electrostatic chuck, characterized in that in any one of the first to seventeenth inventions, the heater element is provided with a plurality of the heater elements, and the plurality of heater elements are arranged in the The different layers are arranged in an independent state.

According to this electrostatic chuck, since the heater elements are arranged in a state where the different layers are independent, the temperature in the plane of the processing object can be controlled independently for each region. According to this, it is possible to intentionally distinguish the temperature (temperature controllability) of the object to be processed.

A nineteenth invention is an electrostatic chuck, characterized in that in any one of the first to eighteenth inventions, the first support plate includes: side by side with the first conductive portion in the lamination direction. A first support portion; and a second support portion juxtaposed with the first space portion in the lamination direction, the second support plate including: a third support portion juxtaposed with the first conductive portion in the lamination direction; and A fourth support portion juxtaposed with the first space portion in the lamination direction, a distance between the second support portion and the fourth support portion is shorter than a distance between the first support portion and the third support portion .

According to this electrostatic chuck, unevenness is formed in at least one of the first support plate and the second support plate. Such unevenness is formed by the high adhesion between the heater element (the first conductive portion) and the member sandwiching the heater element. With high adhesion, it is possible to achieve heat uniformity and withstand voltage characteristics as designed. Furthermore, by forming a convex portion on the first support plate, the distance between the heater element and the object to be processed can be shortened. This makes it possible to increase the speed of increasing the temperature of the object to be processed. Therefore, it is possible to coexist the [heating performance (heating rate) of the heater], [temperature uniformity], and [withstand voltage reliability].

The twentieth invention is an electrostatic chuck, characterized in that in any one of the first to eighteenth inventions, the first support plate includes: side by side with the first conductive portion in the lamination direction A first support portion; and a second support portion juxtaposed with the first space portion in the lamination direction, the second support plate including: a third support portion juxtaposed with the first conductive portion in the lamination direction; and A fourth support portion juxtaposed with the first space portion in the lamination direction, a distance between the second support portion and the fourth support portion is substantially greater than a distance between the first support portion and the third support portion On the same.

According to this electrostatic chuck, no unevenness is formed on the first support plate and the second support plate, or the unevenness is very small. The first support plate and the second support plate are, for example, flat. This makes it possible to reduce unevenness in the thickness of the adhesive that joins the heating plate, the ceramic dielectric substrate, and the base plate, and to uniformize heat transfer in the plane. In addition, the distance between the heater element and the object to be processed is completely close, and the speed of increasing the temperature of the object to be processed can be increased. Therefore, it is possible to coexist the [heating performance (heating rate) of the heater] and [temperature uniformity].

The twenty-first invention is an electrostatic chuck, characterized in that in any one of the first to twentieth inventions, it is further provided between the heater element and the second support plate, and has Conductive by-pass layer.

According to this electrostatic chuck, the arrangement of the terminals for supplying electric power to the heater element can be made more flexible. By providing a bypass layer, compared with a case where a bypass layer is not provided, it is not necessary to directly connect a terminal having a large heat capacity to a heater element. This can improve the uniformity of the temperature distribution in the plane of the processing target. Moreover, compared with the case where a bypass layer is not provided, it is not necessary to join a terminal to a thin heater element. This improves the reliability of the heating plate.

The twenty-second invention is an electrostatic chuck, characterized in that in the twenty-first invention, the magnitude relationship between the width of the bottom surface of the bypass layer and the width of the top surface of the bypass layer is related to the width of the first conductive portion. The relationship between the width of the bottom surface and the width of the top surface of the first conductive portion is the same.

According to this electrostatic chuck, in each of the bypass layer and the heater element (first conductive portion), when the top surface is wider than the bottom surface, the upper side of the heating plate can be easily heated. Moreover, since the bottom surface is relatively short, it is easy to cool the lower part of the heating plate. This makes it possible to improve temperature traceability (rate of temperature rise and fall). In each of the bypass layer and the first conductive portion, when the bottom surface is wider than the top surface, uneven heat distribution in the vertical direction can be suppressed.

The twenty-third invention is an electrostatic chuck, characterized in that in the twenty-first invention, the magnitude relationship between the width of the bottom surface of the bypass layer and the width of the top surface of the bypass layer is related to the width of the first conductive portion. The relationship between the width of the bottom surface and the width of the top surface of the first conductive portion is opposite.

According to this electrostatic chuck, the direction of the stress applied by the thermal expansion of the bypass layer and the direction of the stress applied by the thermal expansion of the heater element can be reversed. This makes it possible to further suppress the influence of stress.

The twenty-fourth invention is an electrostatic chuck characterized in that in any one of the twenty-first invention to the twenty-third invention, the heater element is electrically connected to the bypass layer, and the heater element And the bypass layer is insulated from the first support plate and the second support plate.

According to this electrostatic chuck, electric power can be supplied to the heater element from the outside via the bypass layer.

A twenty-fifth invention is an electrostatic chuck, characterized in that in any one of the first to twenty-fourth inventions, an area of a top surface of the first support plate is smaller than a bottom surface of the second support plate The area is wide.

According to this electrostatic chuck, when the heater element is viewed from the side of the second support plate, it is possible to more easily connect a terminal that supplies power to the heater element.

The twenty-sixth invention is an electrostatic chuck, characterized in that in any one of the first to the twenty-fifth inventions, it is further provided with: the heating plate is arranged toward the bottom plate, and power is supplied to the foregoing Power supply terminal of heating plate.

According to this electrostatic chuck, since the power supply terminal is arranged from the heating plate toward the bottom plate, power can be supplied to the power supply terminal from a side of the bottom surface of the bottom plate via a member called a socket or the like. According to this, it is possible to suppress the exposure of the power supply terminal to the chamber provided with the electrostatic chuck, and at the same time, to realize the wiring of the heater.

A twenty-seventh invention is an electrostatic chuck, characterized in that in the twenty-sixth invention, the power supply terminal has: a pin portion connected to a socket supplied with power from the outside; and a lead wire thinner than the pin portion A support portion connected to the lead portion; and a joint portion connected to the support portion and joined to the heater element.

According to this electrostatic chuck, since the pin portion is thicker than the lead portion, the pin portion can supply a relatively large current to the heater element. Moreover, because the lead portion is thinner than the pin portion, the lead portion is more easily deformed than the pin portion. The position of the pin can be moved away from the center of the joint. Accordingly, the power supply terminal can be fixed to a member different from the heating plate (for example, the bottom plate). In the case where the support portion is joined to the lead portion and the joint portion by, for example, welding, bonding using laser light, welding, brazing, etc., the stress applied to the power supply terminal can be alleviated, and a wider contact with the heater element can be ensured area.

The twenty-eighth invention is an electrostatic chuck, characterized in that in any one of the twenty-first invention to the twenty-fourth invention, the invention further comprises: arranging from the heating plate to the bottom plate to supply power To the power supply terminal of the heating plate, the power supply terminal includes: a pin portion connected to a socket supplied with external power; a lead portion thinner than the pin portion; a support portion connected to the lead portion; and a connection to the support portion The junction portion joined to the bypass layer supplies the electric power to the heater element via the bypass layer.

According to this electrostatic chuck, since the pin portion is thicker than the lead portion, the pin portion can supply a relatively large current to the heater element. Moreover, since the lead portion is thinner than the pin portion, the lead portion is more easily deformed than the pin portion, and the position of the pin portion can be moved away from the center of the joint portion. Accordingly, the power supply terminal can be fixed to a member different from the heating plate (for example, the bottom plate). In the case where the support portion is bonded to the lead portion and the joint portion by, for example, welding, bonding using laser light, welding, brazing, etc., the stress applied to the power supply terminal can be relaxed, and a wider contact can be ensured to the bypass layer. area. In addition, when the support portion is bonded to the lead portion and the bonding portion by, for example, welding, bonding using laser light, welding, brazing, or the like, a bonding portion having a thickness that is approximately the same as that of the heating plate and the bypass layer may be provided.

The twenty-ninth invention is an electrostatic chuck, characterized in that in any one of the first to the twenty-fifth inventions, the invention further includes: a power supply arranged on the bottom plate and supplying power to the heating plate The power supply terminal includes a power supply unit connected to a socket supplied with power from the outside, and a terminal unit connected to the power supply unit and pressed by the heating plate.

According to this electrostatic chuck, the diameter of a hole provided for power supply can be reduced compared with a case where a power supply terminal is joined by soldering or the like.

According to the aspect of the present invention, a highly reliable electrostatic chuck can be provided.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the drawings, the same constituent elements are assigned the same reference numerals, and detailed descriptions are appropriately omitted. FIG. 1 is a schematic perspective view showing an electrostatic chuck according to this embodiment. 2 (a) and 2 (b) are schematic cross-sectional views showing an electrostatic chuck according to this embodiment. For convenience of explanation, a sectional view is shown in a part of the electrostatic chuck in FIG. 1. FIG. 2 (a) is a schematic cross-sectional view taken along a cutting plane A1-A1 shown in FIG. 1, for example. FIG. 2 (b) is a schematic enlarged view of a region B1 shown in FIG. 2 (a).

The electrostatic chuck 10 according to the present embodiment includes a ceramic dielectric substrate 100, a heating plate 200, and a bottom plate 300. The ceramic dielectric substrate 100 is disposed at a position separated from the base plate 300 in the lamination direction (Z direction). The heating plate 200 is disposed between the base plate 300 and the ceramic dielectric substrate 100.

An adhesive 403 is provided between the bottom plate 300 and the heating plate 200. An adhesive 403 is provided between the heating plate 200 and the ceramic dielectric substrate 100. Examples of the material of the adhesive 403 include heat-resistant resins such as silicone having high thermal conductivity. The thickness of the adhesive 403 is, for example, about 0.1 millimeter (mm) or more and about 1.0 mm or less. The thickness of the adhesive 403 is the same as the distance between the base plate 300 and the heating plate 200, or the distance between the heating plate 200 and the ceramic dielectric substrate 100.

The ceramic dielectric substrate 100 is a flat substrate made of, for example, polycrystalline ceramics sintered compact, and has a first principal surface on which a processing object W such as a semiconductor wafer is placed. ) 101, and a second main surface 102 on the opposite side of the first main surface 101.

Here, in the description of this embodiment, the direction connecting the first main surface 101 and the second main surface 102 is referred to as the Z direction, and one of the directions orthogonal to the Z direction is referred to as the X direction and is referred to as orthogonal to the Z direction. And the direction of the X direction is the Y direction. The Z direction is substantially parallel to the lamination direction of the base plate 300, the heating plate 200, and the ceramic dielectric substrate 100. For example, the Z direction is substantially perpendicular to the first main surface 101 or the second main surface 102. In the description of this embodiment, the in-plane direction means one direction parallel to a plane including the X direction and the Y direction.

Examples of crystal materials included in the ceramic dielectric substrate 100 include Al ₂ O ₃ , Y ₂ O _3, and YAG. By using such a material, infrared transmittance, withstand voltage, and plasma durability in the ceramic dielectric substrate 100 can be improved.

An electrode layer 111 is disposed inside the ceramic dielectric substrate 100. The electrode layer 111 is interposed between the first main surface 101 and the second main surface 102. That is, the electrode layer 111 is formed by being inserted into the ceramic dielectric substrate 100. The electrode layer 111 is integrally sintered on the ceramic dielectric substrate 100.

In addition, the electrode layer 111 is not limited to be interposed between the first main surface 101 and the second main surface 102, and may be attached to the second main surface 102.

The electrostatic chuck 10 generates a charge on the first main surface 101 side of the electrode layer 111 by applying an adsorption and holding voltage to the electrode layer 111, and adsorbs and holds the processing object W by an electrostatic force.

The heating plate 200 generates heat by flowing a heater current, and can increase the temperature of the object W to be processed compared to a case where the heating plate 200 does not generate heat.

The electrode layer 111 is disposed along the first main surface 101 and the second main surface 102. The electrode layer 111 is an adsorption electrode for adsorbing and holding the processing object W. The electrode layer 111 may be a unipolar type or a bipolar type. The electrode layer 111 may be a tripolar type or another multipolar type. The number of the electrode layers 111 or the arrangement of the electrode layers 111 can be appropriately selected.

The ceramic dielectric substrate 100 includes a first dielectric layer 107 between the electrode layer 111 and the first main surface 101, and a second dielectric layer 109 between the electrode layer 111 and the second main surface 102. The infrared spectral transmittance of at least the first dielectric layer 107 in the ceramic dielectric substrate 100 is preferably 20% or more. In this embodiment, the infrared spectral transmittance is a value converted into a thickness of 1 mm.

Since the infrared spectral transmittance of at least the first dielectric layer 107 in the ceramic dielectric substrate 100 is 20% or more, the object to be processed W is placed on the first main surface 101 and released by the heating plate 200. The infrared rays can pass through the ceramic dielectric substrate 100 efficiently. Therefore, it is difficult for heat to accumulate in the processing target W, and the controllability of the temperature of the processing target W is increased.

For example, when the electrostatic chuck 10 is used in a reaction chamber where a plasma treatment is performed, the temperature of the object W to be processed tends to rise with an increase in plasma power. In the electrostatic chuck 10 of the present embodiment, the thermal conductivity conducted to the processing object W due to the plasma power is conducted to the ceramic dielectric substrate 100 with high efficiency. Furthermore, the heat conducted to the ceramic dielectric substrate 100 via the heating plate 200 is conducted to the processing target W with high efficiency. Therefore, heat is efficiently conducted, and the object to be processed W can be easily maintained at a desired temperature.

In the electrostatic chuck 10 according to this embodiment, in addition to the first dielectric layer 107, the infrared spectral transmittance in the second dielectric layer 109 is also preferably 20% or more. With the infrared spectral transmittance of the first dielectric layer 107 and the second dielectric layer 109 being 20% or more, the infrared rays emitted from the heating plate 200 will pass through the ceramic dielectric substrate 100 more efficiently, which can improve the processing target W temperature controllability.

The bottom plate 300 is disposed on the second main surface 102 side of the ceramic dielectric substrate 100, and supports the ceramic dielectric substrate 100 via the heating plate 200. The base plate 300 is provided with a connecting channel 301. That is, the connecting channel 301 is provided inside the base plate 300. Examples of the material of the base plate 300 include aluminum.

The base plate 300 plays a role of adjusting the temperature of the ceramic dielectric substrate 100. For example, when the ceramic dielectric substrate 100 is cooled, a cooling medium is caused to flow into the communication channel 301. The inflowing cooling medium passes through the connecting channel 301 and flows out from the connecting channel 301. Accordingly, the heat of the base plate 300 can be absorbed by the cooling medium, and the ceramic dielectric substrate 100 mounted thereon can be cooled.

On the other hand, when the ceramic dielectric substrate 100 is heated, a heating medium can be injected into the communication channel 301. Alternatively, a heater (not shown) may be built in the bottom plate 300. As described above, if the temperature of the ceramic dielectric substrate 100 is adjusted through the base plate 300, the temperature of the processing object W adsorbed and held by the electrostatic chuck 10 can be easily adjusted.

Further, a convex portion 113 is provided on the first main surface 101 side of the ceramic dielectric substrate 100 as necessary. A groove 115 is provided between the adjacent convex portions 113. The trenches 115 communicate with each other. A space is formed between the back surface of the processing object W mounted on the electrostatic chuck 10 and the groove 115.

An introduction path 321 penetrating the base plate 300 and the ceramic dielectric substrate 100 is connected to the trench 115. When a transport gas such as helium (He) is introduced from the introduction path 321 while the process object W is adsorbed and held, the transport gas flows to a space provided between the process object W and the groove 115, and the transport gas can be transmitted by The processing target W is directly heated or cooled.

Fig. 3 is a schematic perspective view showing a heating plate according to this embodiment. 4 (a) and 4 (b) are schematic perspective views showing a heating plate according to this embodiment. Fig. 5 is a schematic exploded view showing a heating plate according to this embodiment. FIG. 3 is a schematic perspective view of the heating plate of the present embodiment as viewed from the top surface (the side surface of the ceramic dielectric substrate 100). FIG. 4 (a) is a schematic perspective view of the heating plate according to this embodiment as viewed from the bottom surface (the side surface of the bottom plate 300). FIG. 4 (b) is a schematic enlarged view in a region B2 shown in FIG. 4 (a).

As shown in FIG. 5, the heating plate 200 according to this embodiment includes a first support plate 210, a first resin layer 220, a heater element (heat generating layer) 230, a second resin layer 240, a second support plate 270, and a power supply terminal. 280. The heating plate 200 includes a resin portion 223 (see FIG. 6) described later. As shown in FIG. 3, a surface 211 (top surface) of the first support plate 210 forms a top surface of the heating plate 200. As shown in FIG. 4, a surface 271 (bottom surface) of the second support plate 270 forms a bottom surface of the heating plate 200. The first support plate 210 and the second support plate 270 are support plates that support the heater element 230 and the like. In this example, the first support plate 210 and the second support plate 270 support the members by sandwiching the first resin layer 220, the heater element 230, and the second resin layer 240.

The first support plate 210 is disposed between the ceramic dielectric substrate 100 and the base plate 300. The second support plate 270 is disposed between the first support plate 210 and the bottom plate 300. The first resin layer 220 is disposed between the first support plate 210 and the second support plate 270. The second resin layer 240 is disposed between the first resin layer 220 and the second support plate 270. The heater element 230 is disposed between the first resin layer 220 and the second resin layer 240.

The first support plate 210 has a relatively high thermal conductivity. Examples of the material of the first support plate 210 include, for example, a metal containing at least one of aluminum, copper, and nickel, or a graphite having a multilayer structure. Generally, the first support plate 210 is a viewpoint of coexisting [in-plane temperature uniformity of a processing object] and [high throughput] in an antinomy relationship, and a viewpoint of contamination or magnetism to a reaction chamber. The material used is aluminum or aluminum alloy. The thickness (length in the Z direction) of the first support plate 210 is, for example, about 0.1 mm to 5.0 mm. The thickness of the first support plate 210 is preferably about 0.3 mm to 1.0 mm, for example. The first support plate 210 increases the uniformity of the temperature distribution in the plane of the heating plate 200. The first support plate 210 suppresses warping of the heating plate 200. The first support plate 210 increases the bonding strength between the heating plate 200 and the ceramic dielectric substrate 100.

In the processing process of the processing target W, an RF (Radio Frequency) voltage (high-frequency voltage) is applied. When a high-frequency voltage is applied, the heater element 230 may be affected by high-frequency and generate heat. As a result, the temperature controllability of the heater element 230 is reduced. In contrast, in this embodiment, the first support plate 210 blocks high frequencies and prevents the heater element 230 and the bypass layer 250 from generating heat due to the influence of high frequencies. Accordingly, the first support plate 210 can suppress the heating of the heater element 230 to an abnormal temperature.

The material, thickness, and function of the second support plate 270 can be freely set according to required performance, size, and the like. For example, the material, thickness, and function of the second support plate 270 may be the same as those of the first support plate 210, respectively. The first support plate 210 is electrically coupled to the second support plate 270. Here, the term “joining” in the description of the present case includes contact. The electrical connection between the second support plate 270 and the first support plate 210 will be described in detail later.

As such, the first support plate 210 and the second support plate 270 have relatively high thermal conductivity. Accordingly, the first support plate 210 and the second support plate 270 improve the thermal diffusivity of the heat supplied from the heater element 230. In addition, since the first support plate 210 and the second support plate 270 have appropriate thickness and rigidity, for example, warpage of the heating plate 200 is suppressed. Furthermore, the first support plate 210 and the second support plate 270 improve shielding properties against, for example, an RF voltage applied to an electrode or the like of a wafer processing apparatus. For example, the influence of the RF voltage on the heater element 230 is suppressed. In this way, the first support plate 210 and the second support plate 270 have a function of thermal diffusion, a function of suppressing warpage, and a function of shielding RF voltage.

Examples of the material of the first resin layer 220 include polyimide and polyamide-imide. The thickness (length in the Z direction) of the first resin layer 220 is about 20 μm or more and about 0.20 mm or less, for example, 50 μm. The first resin layer 220 bonds the first support plate 210 and the heater element 230 to each other. The first resin layer 220 electrically insulates the first support plate 210 from the heater element 230. As such, the first resin layer 220 has a function of electrical insulation and a function of surface bonding.

The material and thickness of the second resin layer 240 are the same as those of the first resin layer 220.

The second resin layer 240 bonds the heater element 230 and the second support plate 270 to each other. The second resin layer 240 electrically insulates the heater element 230 from the second support plate 270. As such, the second resin layer 240 has a function of electrical insulation and a function of surface bonding.

Examples of the material of the heater element 230 include a metal including at least one of stainless steel, titanium, chromium, nickel, copper, and aluminum. The thickness (length in the Z direction) of the heater element 230 is about 10 μm or more and about 0.20 mm or less, for example, 30 μm. The heater element 230 is electrically insulated from the first support plate 210 and the second support plate 270.

The heater element 230 generates heat when a current flows, and controls the temperature of the processing object W. For example, the heater element 230 heats the processing target W to a predetermined temperature. For example, the heater element 230 makes the temperature distribution in the plane of the processing target W uniform. For example, the heater element 230 intentionally distinguishes the temperature in the plane of the processing object W. The heater element 230 has a strip-shaped heater electrode 239.

The power supply terminal 280 is electrically engaged with the heater element 230. In a state where the heating plate 200 is disposed between the bottom plate 300 and the ceramic dielectric substrate 100, the power supply terminal 280 is disposed from the heating plate 200 toward the bottom plate 300. The power supply terminal 280 supplies power supplied from the outside of the electrostatic chuck 10 to the heater element 230.

The heating plate 200 includes a plurality of power supply terminals 280. The heating plate 200 shown in FIGS. 3 to 5 has eight power supply terminals 280. The number of the power supply terminals 280 is not limited to [8]. One power supply terminal 280 is electrically connected to one heater electrode 239. The hole 273 penetrates the second support plate 270. The power supply terminal 280 is electrically bonded to the heater electrode 239 via the hole 273.

As shown by arrows Ca and Cb shown in FIG. 5, as soon as power is supplied to the power supply terminal 280 from the outside of the electrostatic chuck 10, a current flows through a predetermined area of the heater element 230 as shown by arrow Cc shown in FIG. (zone). The details of the region of the heater element 230 will be described later. As shown by arrows Ca and Cb shown in FIG. 5, the current flowing to the heater element 230 flows to the power supply terminal 280, and the power supply terminal 280 flows to the outside of the electrostatic chuck 10.

In this way, there is a portion where the current enters the heater element 230 and a portion where the current flows out of the heater element 230 in the joint portion of the heater element 230 and the power supply terminal 280. That is, there is a pair at the junction between the heater element 230 and the power supply terminal 280. Since the heating plate 200 shown in FIG. 3 to FIG. 5 has eight power supply terminals 280, there are four pairs of pairs at the junction between the heater element 230 and the power supply terminals 280.

According to this embodiment, the heater element 230 is disposed between the first support plate 210 and the second support plate 270. Thereby, the uniformity of the temperature distribution in the plane of the heating plate 200 can be improved, and the uniformity of the temperature distribution in the plane of the processing target W can be improved. In addition, the first support plate 210 and the second support plate 270 block high frequencies, prevent the heater element 230 (and a bypass layer 250 described later) from generating heat due to the influence of high frequencies, and can suppress the heater element 230 from generating heat to an abnormal temperature.

As described above, the power supply terminal 280 is disposed from the heating plate 200 toward the bottom plate 300. Therefore, power can be supplied to the power supply terminal 280 from the side of the bottom surface 303 (see FIGS. 2 (a) and 2 (b)) of the base plate 300 via a member called a socket or the like. This prevents the power supply terminal 280 from being exposed to the reaction chamber in which the electrostatic chuck 10 is provided, and realizes wiring of the heater.

Next, a method for manufacturing the heating plate 200 according to this embodiment will be described. In the manufacturing method of the heating plate 200 according to this embodiment, first, for example, the first support plate 210 and the second support plate 270 are manufactured by machining of aluminum. The inspection of the first support plate 210 and the second support plate 270 can be performed using, for example, a three-dimensional measuring instrument.

Next, the first resin layer 220, the second resin layer 240, and the resin portion 223 are manufactured by, for example, cutting a polyimide film with laser, machining, mold release, or dissolution. The inspection of the first resin layer 220, the second resin layer 240, and the resin portion 223 is performed using, for example, visual inspection.

Next, a photolithography technique or a printing technique is used to etch a metal containing at least any one of stainless steel, titanium, chromium, nickel, copper, and aluminum, and cutting is performed by machining, die casting, and the like. A metal of at least any one of nickel, copper, and aluminum forms a heater pattern. According to this, the heater element 230 is manufactured. The measurement of the resistance value of the heater element 230 and the like are performed.

Next, the laminated body in which the respective members of the heating plate 200 are laminated is pressure-bonded. In this way, the heating plate 200 of this embodiment is manufactured. In addition, inspection and the like of the manufactured hot plate 200 are suitable.

The structure of the heating plate 200 according to this embodiment will be further described with reference to the drawings. Fig. 6 is a sectional view showing a part of the heating plate according to the embodiment. FIG. 7 is a photo image of the heating plate according to this embodiment. A cross section corresponding to a region B3 shown in FIG. 6 is observed in FIG. 7. In this embodiment, the heater electrodes 239 are independently arranged in a plurality of regions. For example, as shown in FIG. 6, the heater electrode 239 (heater element 230) includes a first conductive portion 21 and a second conductive portion 22. The second conductive portion 22 is separated from the first conductive portion 21 in the in-plane direction Dp (for example, the X direction). The first conductive portion 21 and the second conductive portion 22 are part of the heater electrode 239. The distance between the first conductive portion 21 and the second conductive portion 22 (the width L8 of the separation portion 235 between the first conductive portion 21 and the second conductive portion 22) is, for example, 500 μm or more. In this way, by placing the heater electrode 239 in a plurality of regions, the temperature in the plane of the processing target W can be controlled in each region. A specific example of the pattern of the heater electrode 239 will be described later with reference to FIGS. 21 (a), 21 (b), and 22.

For example, the top surface of the first conductive portion 21 is in contact with the first resin layer 220, and the bottom surface of the first conductive portion 21 is in contact with the second resin layer 240. For example, the top surface of the second conductive portion 22 is in contact with the first resin layer 220, and the bottom surface of the second conductive portion 22 is in contact with the second resin layer 240.

The heating plate 200 includes a first resin portion 221 (resin portion 223). The first resin portion 221 is disposed between the first resin layer 220 and the second resin layer 240 in the Z direction. For example, the top surface of the first resin portion 221 is in contact with the first resin layer 220, and the bottom surface of the first resin portion 221 is in contact with the second resin layer 240. The first resin portion 221 is disposed between the first conductive portion 21 and the second conductive portion 22 in the in-plane direction Dp. In other words, the resin portion 223 is disposed between each of the heater electrodes 239. The first resin portion 221 is separated from the first conductive portion 21 and the second conductive portion 22. That is, the first resin layer 220 is in contact with the first resin portion 221 through the second resin layer 240 between the first conductive portion 21 and the second conductive portion 22.

The first resin portion 221 (resin portion 223) is a resin layer different from the first resin layer 220 and the second resin layer 240. For example, the first resin portion 221 includes a material different from that of the first resin layer 220. Different materials refer to materials with different compositions, materials with different physical properties (such as melting point or glass transition point, etc.), or materials with different thermal history. An interface exists between two materials with different thermal history. The first resin portion 221 includes a material different from that of the second resin layer 240. The thermal history of the first resin portion 221 is different from the thermal history of the first resin layer 220 and the second resin layer 240. The composition of the first resin portion 221 is different from the composition of the first resin layer 220 and the second resin layer 240.

For example, when the first resin portion 221 contains a component different from that contained in the first resin layer 220, the material of the first resin portion 221 is different from that of the first resin layer 220. Even in the case where the first resin portion 221 contains the same component as that of the first resin layer 220, the composition ratio (concentration) of the component in the first resin portion 221 and the composition ratio of the component in the first resin layer 220 When the (concentration) is different, the material of the first resin portion 221 is also different from that of the first resin layer 220. In addition, for example, even when the first resin layer 220 includes a plurality of layers, the material of the first resin portion 221 is different from that of the first resin layer 220 in a case where at least one of the materials of the plurality of layers is different from the material of the first resin portion 221. The materials are different. The glass transition point (or melting point) of the first resin portion 221 is, for example, lower than the glass transition point (or melting point) of the first resin layer 220. The same applies to the case where the material of the first resin portion 221 is different from that of the second resin layer 240.

For example, the material of the first resin portion 221 is polyimide, silicone, epoxy, acrylic, or the like. For example, a polyimide film, a foaming adhesive sheet, an adhesive containing silicone or an epoxy resin, and the like can be used.

The first conductive portion 21 has a side end portion 21a (a first side end portion) in the in-plane direction Dp. The side end portion 21 a is an end portion on the first resin portion 221 side (end portion on the second conductive portion 22 side). Similarly, the second conductive portion 22 has a side end portion 22a in the in-plane direction Dp. The side end portion 22 a is an end portion on the first resin portion 221 side (end portion on the first conductive portion 21 side). The first resin portion 221 has a side end portion 221a and a side end portion 221b in the in-plane direction Dp. The side end portion 221a is an end portion on the first conductive portion 21 side, and the side end portion 221b is an end portion on the second conductive portion 22 side.

The heating plate 200 includes a space portion 23a and a space portion 23b. The space portion 23a (first space portion) is divided (surrounded) by at least the side end portion 21a of the first conductive portion 21, the first resin layer 220, the second resin layer 240, and the first resin portion 221 (side end portion 221a). )Space. The space portion 23 a is adjacent to the side end portion 21 a in the in-plane direction Dp, and is located between the first conductive portion 21 and the first resin portion 221.

Similarly, the space portion 23b is a space divided (surrounded) by at least the side end portion 22a of the second conductive portion 22, the first resin layer 220, the second resin layer 240, and the first resin portion 221 (side end portion 221b). . The space portion 23b is adjacent to the side end portion 22a in the in-plane direction Dp, and is located between the second conductive portion 22 and the first resin portion 221.

The length L2 of the space portion 23a along the Z direction is equal to or less than the length L1 of the first conductive portion 21 along the Z direction. Similarly, the length in the Z direction of the space portion 23 b is equal to or less than the length in the Z direction of the second conductive portion 22.

When a current flows to the heater electrode 239 and the heating plate 200 generates heat, thermal expansion of the heater electrode 239 occurs. For example, the thermal expansion coefficient of the first resin layer 220 and the thermal expansion coefficient of the heater electrode 239 are often different. Moreover, for example, the temperature of the first resin layer 220 and the temperature of the heater electrode 239 are often different. Therefore, if the heater electrode 239 is deformed by thermal expansion, a stress is applied to the first resin layer 220. Due to this stress, peeling of the first resin layer 220 and the heater electrode 239 may occur. In a region where peeling occurs, heat conduction from the heater electrode 239 to the processing target W is blocked. Therefore, the temperature of the processing target W may be locally reduced.

Similarly, the second resin layer 240 and the heater electrode 239 tend to peel off. In a region where peeling occurs, for example, heat conduction from the heater electrode 239 to a cooling medium is blocked. Therefore, the temperature of the processing object W may rise locally. When a local temperature change occurs in the processing target W, the accuracy of processing such as etching decreases. As a result, the yield of semiconductor wafers and the like tends to decrease.

On the other hand, in the electrostatic chuck according to the embodiment, gaps (space portions 23a, 23b, and the like) are provided at each side end portion of the heater electrode 239 that is separately disposed in a plurality of regions. Accordingly, for example, the heater electrode 239 (the first conductive portion 21 and the like) can expand toward the gap. Even if the heater electrode 239 is deformed by thermal expansion, the stress applied to the first resin layer 220 and the second resin layer 240 can be reduced because the gap is filled. Accordingly, it is possible to suppress separation of the heater electrode 239 and the first resin layer 220 and separation of the heater electrode 239 and the second resin layer 240. Therefore, resistance to a load can be improved, and reliability can be improved. In addition, it is possible to suppress the local block of heat conduction due to peeling, and to suppress a local temperature change of the processing target W. That is, temperature uniformity and temperature controllability can be improved, and the temperature of a processing object can be stably controlled. It can improve the processing accuracy and yield of etching.

Furthermore, by disposing the first resin portion 221 (resin portion 223) between the first resin layer 220 and the second resin layer 240, the heat capacity or heat conduction between the first support plate 210 and the second support plate 270 can be controlled. . For example, the heat conduction or heat capacity of the heating plate can be adjusted by adjusting the material or shape of the first resin portion 221 (resin portion 223). This makes it possible to coexist temperature uniformity and thermal conductivity.

As shown in FIG. 6, the first support plate 210 includes a surface PL1 (bottom surface) on the second support plate 270 side. The plane PL1 is opposed to the first resin layer 220, and is in contact with the first resin layer 220, for example.

A surface PL1 (bottom surface) of the first support plate 210 has a first region R1 and a second region R2. The first region R1 overlaps the heater electrode 239 (the heater element 230) when viewed in the Z direction (plan view). For example, the first region R1 overlaps the first conductive portion 21 or the second conductive portion 22 when viewed in the Z direction. The second region R2 does not overlap the heater electrode 239 (the heater element 230) when viewed in the Z direction.

In the electrostatic chuck 10, in a cross section parallel to the Z direction shown in FIG. 6, the second region R2 projects beyond the first region R1 on the second support plate 270 side. In other words, the position in the Z direction of the second region R2 is between the position in the Z direction of the first region R1 and the second support plate 270.

That is, the surface PL1 (bottom surface) of the first support plate 210 has irregularities that mimic the shape of the heater element 230. The first region R1 corresponds to a concave portion of the first support plate 210, and the second region R2 corresponds to a convex portion of the first support plate 210. Similarly, the top surface of the first support plate 210 is also formed with irregularities that mimic the shape of the heater element 230.

The second support plate 270 has a surface PU2 (top surface) on the side of the first support plate 210. The surface PU2 faces the second resin layer 240 (or a third resin layer 260 described later), and is in contact with the second resin layer 240 (or a third resin layer 260 described later), for example.

A surface PU2 (top surface) of the second support plate 270 has a third region R3 and a fourth region R4. The third region R3 overlaps the heater element 230 when viewed in the Z direction. For example, the third region R3 overlaps the first conductive portion 21 or the second conductive portion 22 when viewed in the Z direction. The fourth region R4 does not overlap the heater element 230 when viewed in the Z direction.

In the cross section shown in FIG. 6, the fourth region R4 protrudes further from the first support plate 210 side than the third region R3. In other words, the position in the Z direction of the fourth region R4 is between the position in the Z direction of the third region R3 and the first support plate 210.

That is, the surface PU2 (top surface) of the second support plate 270 has irregularities that mimic the shape of the heater element 230. The third region R3 corresponds to a concave portion of the second support plate 270, and the fourth region R4 corresponds to a convex portion of the second support plate 270. Similarly, the bottom surface of the second support plate 270 is formed with irregularities that mimic the shape of the heater element 230.

A distance D1 in the Z direction between the second region R2 and the fourth region R4 is shorter than a distance D2 in the Z direction between the first region R1 and the third region R3.

In this way, unevenness is formed in the first support plate 210 and the second support plate 270. Such unevenness is formed by high adhesion of each member laminated on the heating plate 200. That is, since the unevenness is formed on the surface PL1 (bottom surface) of the first support plate 210, the layer (for example, the first resin layer 220) close to the surface PL1 has high adhesion to the surface PL1. In addition, since the surface PU2 (top surface) of the second support plate 270 has unevenness, a layer close to the surface PU2 (for example, the second resin layer 240) and the surface PU2 have high adhesion. Accordingly, peeling of the first support plate 210 and peeling of the second support plate 270 can be suppressed, and reliability can be improved. For example, it is possible to suppress thermal unevenness or reduction in withstand voltage characteristics due to local peeling. It can achieve the characteristics of heat distribution and withstand voltage as designed.

In addition, since the adhesiveness is high, the thermal conductivity of the heating plate 200 can be improved. Furthermore, the unevenness of the first support plate 210 can shorten the distance between the heater element 230 and the object to be processed, for example. This can increase the rate of temperature rise of the processing target. Therefore, it is possible to coexist, for example, [heating performance (heating rate) of the heater], [temperature uniformity], and [withstand voltage reliability].

Fig. 8 is a sectional view showing a part of the heating plate according to the embodiment. FIG. 8 shows a region including both ends in the in-plane direction Dp of the first conductive portion 21 shown in FIG. 6. In the example shown in FIG. 8, the heating plate 200 further includes a second resin portion 222 (resin portion 223). The second resin portion 222 is disposed between the first resin layer 220 and the second resin layer 240 in the Z direction. For example, the top surface of the second resin portion 222 is in contact with the first resin layer 220, and the bottom surface of the second resin portion 222 is in contact with the second resin layer 240. The material and thickness of the second resin portion 222 are the same as those of the first resin portion 221.

The first conductive portion 21 is located between the first resin portion 221 and the second resin portion 222 in the in-plane direction Dp. The first conductive portion 21 is separated from the first resin portion 221 and the second resin portion 222.

The first conductive portion 21 has a side end portion 21b (a second side end portion) in the in-plane direction Dp. The side end portion 21b is an end portion on the second resin portion 222 side. That is, the side end portion 21b is an end portion on the side opposite to the side end portion 21a. The second resin portion 222 has a side end portion 222a in the in-plane direction Dp. The side end portion 222 a is an end portion on the side of the first conductive portion 21.

The heating plate 200 further includes a space portion 23c. The space portion 23c (second space portion) is divided (surrounded) by at least the side end portion 21b of the first conductive portion 21, the first resin layer 220, the second resin layer 240, and the second resin portion 222 (side end portion 222a). )Space. The space portion 23c is adjacent to the side end portion 21b in the in-plane direction Dp, and is located between the first conductive portion 21 and the second resin portion 222.

The length L3 of the space portion 23c along the Z direction is equal to or less than the length L1 of the first conductive portion 21 along the Z direction.

In addition, in the embodiment, the second resin portion 222 need not necessarily be provided. That is, the space portion 23c may be a space divided by the first conductive portion 21, the first resin layer 220, and the second resin layer 240.

As described above, by providing the space portion 23c (second space portion), even if the first conductive portion 21 expands due to heat, the space can be deformed to fill the space portion 23c. As a result, the stress applied to the first resin layer 220 and the second resin layer 240 can be reduced as in the description of FIG. 6. In addition, as shown in FIG. 8, by providing gaps at both ends of the first conductive portion 21, reliability, temperature uniformity, temperature controllability, and the like can be further improved.

Fig. 9 is a sectional view showing a part of the heating plate according to the embodiment. FIG. 9 is an enlarged view illustrating the shape of the space portion 23 a described above with reference to FIGS. 6 to 8. In this example, the thickness (length along the Z direction) of the first conductive portion 21 is considered to be the same as the thickness of the first resin portion 221.

In the cross section (cross section parallel to the Z direction) shown in FIG. 9, the first resin layer 220 is separated (disjoint) from the second resin layer 240 between the first conductive portion 21 and the first resin portion 221. The shape of the space portion 23a has four vertices Pt1 to Pt4 in this cross section. The vertex is a point (angle) in which the cross-sectional shape (contour) of the space portion is discontinuously bent. The first resin layer 220 intersects the first resin portion 221 in the vertex Pt1. The first resin layer 220 intersects the first conductive portion 21 at the vertex Pt2. The second resin layer 240 intersects the first resin portion 221 at the vertex Pt3. The second resin layer 240 intersects the first conductive portion 21 at the vertex Pt4.

With the shape of the space portion 23a as described above, the space between the first resin layer 220 and the second resin layer 240 is not narrowed compared with a triangle having, for example, three vertices. Accordingly, when the heater element (the first conductive portion 21) is deformed by heat, the stress applied to the first resin layer 220 and the second resin layer 240 is easily reduced.

As shown in FIG. 9, the space portion 23 a includes both end portions (end portions Ep1 and end portions Ep2) in the in-plane direction Dp, and a central portion Cp1 located between the end portions Ep1 and the end portions Ep2. The length L4 along the Z direction of the central portion Cp1 is shorter than the length L5 along the Z direction of the end portion Ep1 (or the end portion Ep2).

That is, the space portion 23a is recessed in the Z direction and enlarged in the in-plane direction Dp. The expansion of the space in the in-plane direction Dp makes it easy to ease thermal expansion. In addition, since the space portion is recessed in the Z direction and the space is secured, the relaxation of thermal expansion and the transferability of heat in the longitudinal direction can be improved.

In this example, the space portion 23a has a shape that is crushed from the upper side and the lower side as it approaches the central portion in the in-plane direction Dp of the space portion 23a. That is, the boundary between the space portion 23a and the first resin layer 220 approaches the virtual portion Pn1 (virtual line) shown in FIG. 9 as it approaches the central portion Cp1 in the in-plane direction Dp. The boundary between the space portion 23 a and the second resin layer 240 approaches the virtual portion Pn1 as it approaches the central portion Cp1 in the in-plane direction Dp. The imaginary plane Pn1 is a plane that passes through the vicinity of the center in the Z direction of the first conductive portion 21 and is parallel to the in-plane direction Dp.

Fig. 10 is a sectional view showing a part of another heating plate according to the present embodiment. In the example shown in FIG. 10, the length L6 (thickness) of the first resin portion 221 along the Z direction is shorter than the length L1 of the first conductive portion 21 along the Z direction.

In the embodiment, the length L6 along the Z direction of the first resin portion 221 is preferably equal to or less than the length L1 along the Z direction of the first conductive portion 21. If the first resin portion 221 (resin portion 223) is too thick, there is a case where the resin layer (first resin layer 220 or second resin layer 240) and the heater element (first There is a possibility that the adhesion of the conductive portion 21) is reduced. By suppressing the thickness of the first resin portion 221 (resin portion 223), the adhesion between the resin layer and the heater element can be ensured. Accordingly, the first resin layer 220 or the second resin layer 240 can be prevented from being separated from the first conductive portion 21. Since the adhesiveness between the heater element and the resin layer can be improved, the uniformity of heat and withstand voltage characteristics as designed can be achieved. Further, by ensuring the adhesion between the heater element and the resin layer, unevenness is formed on the top surface of the first support plate 210. Therefore, the distance between the heater element and the object to be processed can be shortened. This makes it possible to increase the speed of increasing the temperature of the object to be processed. Therefore, it is possible to coexist the [heating performance (heating rate) of the heater], [temperature uniformity], and [withstand voltage reliability].

11 (a) and 11 (b) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. In the example shown in FIG. 11 (a), the space portion 23a has a shape that is crushed from the lower side as it approaches the central portion Cp1. That is, the boundary between the space portion 23a and the second resin layer 240 approaches the central portion Cp1 in the in-plane direction Dp and approaches the virtual plane Pn2 (imaginary line) shown in FIG. 11 (a). The boundary between the space portion 23a and the first resin layer 220 extends along the virtual plane Pn2. The imaginary plane Pn2 is a plane extending through the top surface 21U of the first conductive portion 21 and extending in the in-plane direction Dp. The top surface 21U is a surface facing the first resin layer 220, and the first conductive portion 21 is in contact with the first resin layer 220 in the top surface 21U. Similarly, the space portion 23b has a shape that is crushed from the lower side.

In the example shown in FIG. 11 (b), the space portion 23a has a shape that is crushed from the upper side as it approaches the central portion Cp1. That is, the boundary between the space portion 23a and the first resin layer 220 approaches the central portion Cp1 in the in-plane direction Dp and approaches the virtual plane Pn3 (imaginary line) shown in FIG. 11 (b). The boundary between the space portion 23a and the second resin layer 240 extends along the virtual plane Pn3. The imaginary plane Pn3 is a plane that extends through the bottom surface 21L of the first conductive portion 21 in the in-plane direction Dp. The bottom surface 21L is a surface facing the second resin layer 240, and the first conductive portion 21 is in contact with the second resin layer 240 in the bottom surface 21L. Similarly, the space portion 23b has a shape that is crushed from the upper side.

Since the space portions 23a and 23b have a shape crushed by either of the upper side and the lower side, it is easier to secure the size of the space portions 23a and 23b during crimping compared with a shape crushed by both sides. The shape of the space portions 23a, 23b can be adjusted by adjusting the crimping conditions or the structure (material, etc.) of the laminated body.

In the examples shown in FIGS. 11 (a) and 11 (b), the length (width) of the top surface 21U along the in-plane direction Dp is slightly the same as the length of the bottom surface 21L along the in-plane direction Dp.

12 (a) and 12 (b) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. In the example shown in FIGS. 12 (a) and 12 (b), the width of the top surface of the heater electrode 239 is different from the width of the bottom surface of the heater electrode 239. The ends of the heater electrode 239 are different in length from the top to the bottom.

Specifically, for example, the length L7 of the top surface 21U of the first conductive portion 21 in the in-plane direction Dp is different from the length L9 of the bottom surface 21L of the first conductive portion 21 in the in-plane direction Dp.

FIG. 12 (a) shows an example in which the width of the bottom surface of the heater electrode 239 is wider than the width of the top surface of the heater electrode 239. For example, the length L9 is longer than the length L7.

In this case, the stress applied to the layer contacting the top surface of the heater electrode 239 can be reduced, and peeling of the layer contacting the top surface of the heater electrode 239 can be suppressed. In addition, in the electrostatic chuck, heat is easily dissipated to the bottom plate 300 disposed below the heater electrode 239, and uneven heat distribution may occur in the vertical direction. In contrast, as shown in FIG. 12 (a), the bottom surface of the heater electrode 239 is wide, so that the lower portion of the heater electrode 239 can be easily heated. This makes it possible to suppress uneven heat distribution in the vertical direction.

FIG. 12 (b) shows an example in which the width of the top surface of the heater electrode 239 is wider than the width of the bottom surface of the heater electrode 239. For example, the length L7 is longer than the length L9.

In this case, the stress applied to the layer contacting the bottom surface of the heater electrode 239 can be reduced, and peeling of the layer contacting the bottom surface of the heater electrode 239 can be suppressed. In addition, since the top surface of the heater electrode 239 is wide, the upper portion of the heater electrode 239 can be easily heated. Since the bottom surface of the heater electrode 239 is narrow, the lower part of the heater electrode 239 can be easily cooled. This makes it possible to improve temperature traceability (rate of temperature rise and fall). In addition, the temperature traceability refers to the traceability of the temperature of the object to be processed when the set temperature is changed by changing the output of the heater or the like, and has a relationship with the heating performance (temperature rise rate).

The heater electrode 239 has a side surface connecting the top surface and the bottom surface. The side surface is a surface contacting a space portion (gap) adjacent to the heater electrode 239. The side surface is rougher than a surface having a wider width in the in-plane direction among the top surface and the bottom surface of the heater electrode 239. For example, the first conductive portion 21 has a side surface S1 and a side surface S2 connecting the top surface 21U and the bottom surface 21L. The side surface S1 is a surface in contact with the space portion 23a, and the side surface S2 is a surface on the opposite side to the side surface S1. Each of the side surfaces S1 and S2 is rougher than at least one of the top surface 21U and the bottom surface 21L. For example, in the example shown in FIG. 12 (a), each of the side surface S1 and the side surface S2 is rougher than the bottom surface 21L. Further, in the example shown in FIG. 12 (b), each of the side surface S1 and the side surface S2 is rougher than the top surface 21U.

The side surface is rougher than at least one of the top surface and the bottom surface of the conductive portion, so that the heat diffusion from the side surface becomes better, and the heat characteristics such as the heat uniformity and the temperature traceability can be improved.

13 (a) and 13 (b) are cross-sectional views showing a part of a modification of the heating plate of the present embodiment. These figures are enlarged views illustrating the shape of the first conductive portion 21. 13 (a) and 13 (b) show the first conductive portion 21 shown in FIG. 12 (a) and the first conductive portion 21 shown in FIG. 12 (b), respectively.

As shown in FIGS. 13 (a) and 13 (b), in a cross section parallel to the Z direction, each of the side surface S1 and the side surface S2 is curved. In the example of FIG. 13 (a), the side surfaces S1 and S2 are concave curved surfaces (recessed downward). In the example of FIG. 13 (b), the side surface S1 and the side surface S2 are each a concave curved surface (concave upward). The side surfaces S1 and S2 may be planar.

By adjusting the shapes of the curved surfaces of the side surfaces S1 and S2 as described above, for example, the space portion 23a or the space portion 23c can be enlarged, or the unevenness formed on the first resin layer 220 and the second resin layer 240 can be increased. This makes it possible to further improve heating performance (temperature rise rate), temperature uniformity, and reliability of withstand voltage.

The angle θ1 between the top surface 21U and the side surface S1 is different from the angle θ2 between the bottom surface 21L and the side surface S1. According to this, the relaxation of the stress applied to the resin layer due to the deformation of the heater due to thermal expansion can reduce the peeling of the resin layer close to the heater element, and coexist with the characteristics of heat such as uniformity and temperature traceability.

14 (a) to 14 (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. The first support plate 210 includes a first support portion SP1 and a second support portion SP2. The first support portion SP1 is juxtaposed with the first conductive portion 21 in the Z direction. The second support portion SP2 is juxtaposed with the space portion 23a in the Z direction. Similarly, the second support plate 270 includes a third support portion SP3 and a fourth support portion SP4. The third support portion SP3 is juxtaposed with the first conductive portion 21 in the Z direction. The fourth support portion SP4 is juxtaposed with the space portion 23a in the Z direction.

As shown in FIGS. 14 (a) to 14 (c), the length L10 (distance) between the second support portion SP2 and the fourth support portion SP4 is longer than the length between the first support portion SP1 and the third support portion SP3. L11 (distance) is short. That is, at least one of the first support plate 210 and the second support plate 270 is formed with unevenness.

FIG. 14 (a) shows an example in which unevenness is formed on both of the first support plate 210 and the second support plate 270. In this example, the first support portion SP1 and the third support portion SP3 are flat, and the second support portion SP2 and the fourth support portion SP4 are recessed.

FIG. 14 (b) shows an example in which unevenness is formed in the first support plate 210 and unevenness is not formed in the second support plate 270. In this example, the first support portion SP1, the third support portion SP3, and the fourth support portion SP4 are flat, and the second support portion SP2 is recessed.

FIG. 14 (c) shows an example in which unevenness is formed in the second support plate 270 and unevenness is not formed in the first support plate 210. In this example, the first support portion SP1, the second support portion SP2, and the third support portion SP3 are flat, and the fourth support portion SP4 is recessed.

The unevenness of such a support plate is formed by the high adhesion between the heater element (the first conductive portion 21) and the member sandwiching the heater element. Since the adhesion is high, for example, unevenness is suppressed, and heat conduction is easily controlled. For example, it is possible to achieve heat distribution and withstand voltage characteristics as designed. In addition, by forming a convex portion on the first support plate 210, the distance between the heater element and the object to be processed can be shortened. This makes it possible to increase the speed of increasing the temperature of the object to be processed. In addition, by forming a flat portion on the support plate, the thickness of the adhesive 403 can be easily controlled, and unevenness can be reduced.

The length L10 and the length L11 are substantially the same in FIG. 14 (d). Substantially the same means, for example, that the length L10 is about 0.9 times to 1.1 times the length L11. The first support plate 210 and the second support plate 270 are flat in FIG. 14 (d). As a result, unevenness in thickness of the adhesive 403 that joins the heating plate 200, the ceramic dielectric substrate 100, and the base plate 300 can be reduced, and the in-plane heat transfer can be made uniform. In addition, the distance between the heater element and the object to be processed is completely close, and the speed of increasing the temperature of the object to be processed can be increased. Therefore, it is possible to coexist the [heating performance (heating rate) of the heater] and [temperature uniformity].

FIG. 15 is a schematic exploded view showing a modification of the heating plate according to the present embodiment. As shown in FIG. 15, the heating plate 200 may include a bypass layer 250 and a third resin layer 260. The bypass layer 250 is disposed between the second resin layer 240 and the second support plate 270. The third resin layer 260 is disposed between the bypass layer 250 and the second support plate 270. Except for this point, the same explanation as the above-mentioned heating plate can be applied to the heating plate of the modification shown in FIG. 15. In addition, in FIG. 15, the illustration of the resin portion 223 is omitted for convenience of explanation.

The third resin layer 260 bonds the bypass layer 250 and the second support plate 270 to each other. The third resin layer 260 electrically insulates the bypass layer 250 from the second support plate 270. As such, the third resin layer 260 has a function of electrical insulation and a function of surface bonding. The material and thickness of the third resin layer 260 are the same as the material and thickness of the first resin layer 220, respectively.

In this example, the second resin layer 240 bonds the heater element 230 and the bypass layer 250 to each other. The second resin layer 240 electrically insulates the heater element 230 from the bypass layer 250.

The bypass layer 250 is arranged slightly parallel to the first support plate 210 and is arranged slightly parallel to the second support plate 270. The bypass layer 250 includes a plurality of bypass portions 251. The bypass layer 250 includes, for example, eight bypass portions 251. The number of bypass sections 251 is not limited to [8]. The bypass layer 250 has a plate shape. When viewed perpendicularly to the surface of the bypass layer 250 (the surface 251a of the bypass portion 251), the area of the bypass layer 250 is larger than the area of the heater element 230 (the area of the heater electrode 239). This will be described in detail later.

The bypass layer 250 has conductivity. The bypass layer 250 is electrically insulated from the first support plate 210 and the second support plate 270. Examples of the material of the bypass layer 250 include a metal including stainless steel. The thickness (length in the Z direction) of the bypass layer 250 is, for example, about 0.03 mm or more and about 0.30 mm or less. The thickness of the bypass layer 250 is thicker than that of the first resin layer 220. The thickness of the bypass layer 250 is thicker than that of the second resin layer 240. The thickness of the bypass layer 250 is thicker than that of the third resin layer 260.

For example, the material of the bypass layer 250 is the same as that of the heater element 230. On the other hand, the thickness of the bypass layer 250 is thicker than the thickness of the heater element 230. Therefore, the resistance of the bypass layer 250 is lower than that of the heater element 230. According to this, even if the material of the bypass layer 250 is the same as that of the heater element 230, the bypass layer 250 can be suppressed from generating heat like the heater element 230. That is, the resistance of the bypass layer 250 can be suppressed, and the heat generation amount of the bypass layer 250 can be suppressed. In addition, the means for suppressing the resistance of the bypass layer 250 and the amount of heat generated by the bypass layer 250 is not the thickness of the bypass layer 250, but may be realized by using a material having a low volume resistivity. That is, the material of the bypass layer 250 may be different from the material of the heater element 230. Examples of the material of the bypass layer 250 include a metal including at least any one of stainless steel, titanium, chromium, nickel, copper, and aluminum.

The power supply terminal 280 is electrically connected to the heater element 230 through the bypass layer 250. One power supply terminal 280 is electrically connected to one bypass layer 250. As shown by arrows C1 and C2 shown in FIG. 15, as soon as power is supplied to the power supply terminal 280 from the outside of the electrostatic chuck 10, current flows from the power supply terminal 280 to the bypass layer 250. As shown by arrows C3 and C4 shown in FIG. 15, a current flowing to the bypass layer 250 flows from the bypass layer 250 to the heater element 230. As shown by arrows C5 and C6 shown in FIG. 15, the current flowing to the heater element 230 flows through a predetermined area of the heater element 230, and flows from the heater element 230 to the bypass layer 250. As shown by arrows C7 and C8 shown in FIG. 15, a current flowing to the bypass layer 250 flows from the bypass layer 250 to the power supply terminal 280. As shown by an arrow C9 shown in FIG. 15, a current flowing to the power supply terminal 280 flows to the outside of the electrostatic chuck 10.

As described above, the bypass layer 250 is disposed between the heater element 230 and the second support plate 270. That is, the bypass layer 250 is disposed between the heater element 230 and the bottom plate 300. The thermal conductivity of stainless steel is lower than that of aluminum and copper. Therefore, the bypass layer 250 suppresses the heat supplied from the heater element 230 from being conducted to the second support plate 270. That is, the bypass layer 250 has a thermal insulation effect on the side of the second support plate 270 when viewed from the bypass layer 250, and can improve the uniformity of the temperature distribution in the plane of the processing object W.

The bypass layer 250 can configure the power supply terminal 280 to have a greater degree of freedom. By providing the bypass layer 250, compared with the case where the bypass layer 250 is not provided, it is not necessary to directly connect the power supply terminal with a large heat capacity to the heater element 230. Thereby, the uniformity of the temperature distribution in the plane of the processing target W can be improved. In addition, as compared with a case where the bypass layer 250 is not provided, the power supply terminal 280 may not be bonded to the thin heater element 230. Accordingly, the reliability of the heating plate 200 can be improved.

Next, the manufacturing method of the heating plate shown in FIG. 15 is demonstrated. 16 (a) and 16 (b) are schematic cross-sectional views illustrating an example of a manufacturing method according to this embodiment. FIG. 17 is a schematic cross-sectional view illustrating another example of the manufacturing method of the embodiment. FIG. 16 (a) is a schematic sectional view showing a state before the bypass layer and the heater element are joined. FIG. 16 (b) is a schematic sectional view showing a state where the bypass layer and the heater element are joined. 17 is a schematic cross-sectional view illustrating an example of a bonding process of a bypass layer and a power supply terminal.

First, each member of the heating plate 200 is prepared in the same manner as the manufacturing method described with reference to FIG. 5. Next, as shown in FIGS. 16 (a) and 16 (b), the heater element 230 and the bypass layer 250 are bonded. The joining of the heater element 230 and the bypass layer 250 is performed by welding, brazing, welding, or contacting. As shown in FIG. 16 (a), a hole 241 is provided in the second resin layer 240. The hole 241 penetrates the second resin layer 240. For example, as shown by an arrow C11 shown in FIG. 16 (a), the heater element 230 is joined to the bypass layer 250 by spot welding from the side of the bypass layer 250.

In addition, the joining of the heater element 230 and the bypass layer 250 is not limited to welding. For example, the joining of the heater element 230 and the bypass layer 250 may be performed by joining, welding, brazing, or contacting using laser light. Then, the laminated body which laminated | stacked each member of the heating plate 200 was crimped | bonded.

Next, as shown in FIG. 17, bonding of the power supply terminal 280 and the bypass layer 250 is performed. The joining of the power supply terminal 280 and the bypass layer 250 is performed by welding, laser, welding, brazing, or the like. As shown in FIG. 17, a hole 273 is provided in the second support plate 270. The hole 273 penetrates the second support plate 270. This point is as described above with respect to FIG. 4 (b). A hole 261 is provided in the third resin layer 260. The hole 261 penetrates the third resin layer 260. As shown by arrow C13 shown in FIG. 17, the power supply terminal 280 and the bypass layer 250 are joined by welding, laser, welding, or brazing to the first support plate 210 through the second support plate 270. In this way, the heating plate 200 of this embodiment is manufactured.

In the following description, a case where the heating plate includes the bypass layer 250 and the third resin layer 260 is taken as an example. However, in the embodiment, the bypass layer 250 and the third resin layer 260 may be omitted like the heating plate described with reference to FIGS. 5 to 14. Since the structures other than the bypass layer 250 and the third resin layer 260 are the same, detailed description is omitted.

FIG. 18 is a schematic exploded view showing an electrostatic chuck according to this embodiment. 19 (a) and 19 (b) are circuit diagrams showing an electrostatic chuck. FIG. 19 (a) is a circuit diagram showing an example in which the first support plate and the second support plate are electrically joined. FIG. 19 (b) is a circuit diagram showing an example in which the first support plate and the second support plate are not electrically joined.

As shown in FIGS. 18 and 19 (a), the first support plate 210 and the second support plate 270 are electrically joined. The first support plate 210 and the second support plate 270 are joined by, for example, welding, joining using laser light, welding, or contact.

For example, as shown in FIG. 19 (b), if the first support plate 210 and the second support plate 270 are not electrically and surely joined, the first support plate 210 and the second support plate 270 are often electrically joined or not electrically joined. . As a result, uneven etching rates often occur when plasma is generated. Furthermore, even if the first support plate 210 is not electrically connected to the second support plate 270, if a plasma is generated, a current flows to the heater element 230, and the heater element 230 tends to generate heat. In other words, if the first support plate 210 is not electrically joined to the second support plate 270, the heater element 230 may generate heat due to a current other than the heater current.

On the other hand, in the electrostatic chuck 10 according to the present embodiment, as shown in FIG. 19 (a), the first support plate 210 and the second support plate 270 are electrically joined. Accordingly, the current can flow from the first support plate 210 to the second support plate 270, or the current can flow from the second support plate 270 to the first support plate 210 to suppress unevenness in the etching rate when plasma is generated. In addition, the heater element 230 can be prevented from generating heat by a current other than the heater current.

Furthermore, high frequency can be blocked, and the heater element 230 and the bypass layer 250 can be prevented from generating heat due to the influence of the high frequency. Accordingly, it is possible to suppress the heating of the heater element 230 to an abnormal temperature. Moreover, the impedance of the heating plate 200 can be suppressed.

Next, a specific example of the heating plate 200 according to this embodiment will be described with reference to the drawings. 20 (a) and 20 (b) are schematic plan views showing a specific example of the heating plate of this embodiment. 21 (a), 21 (b), and 22 are schematic plan views illustrating a heater element of this specific example. FIG. 23 (a) and FIG. 23 (b) are schematic plan views illustrating the bypass layer of this specific example. 24 (a) and 24 (b) are enlarged views schematically showing a part of the heating plate of this specific example. FIG. 20 (a) is a schematic plan view of the heating plate of this specific example viewed from the top surface. FIG. 20 (b) is a schematic plan view of the heating plate of this specific example as viewed from the bottom. FIG. 21 (a) is a schematic plan view illustrating an example of a region of a heater element. 21 (b) and 22 are schematic plan views illustrating another example of the region of the heater element.

As shown in FIG. 23, at least any one of the plurality of bypass portions 251 of the bypass layer 250 has a notch portion 253 at an edge portion. Four bypass portions 253 are provided in the bypass layer 250 shown in FIG. 23. The number of the notches 253 is not limited to [4]. Since at least any one of the plurality of bypass layers 250 has a notch portion 253, the second support plate 270 may be in contact with the first support plate 210.

As shown in FIGS. 20 (a) and 20 (b), the first support plate 210 is electrically bonded to the second support plate 270 in the regions B11 to B14 and B31 to B34. Each of the regions B11 to B14 corresponds to each of the regions B31 to B34. That is, in the specific examples shown in FIGS. 20 (a) to 22, the first support plate 210 is electrically connected to the second support plate 270 in four areas, and is not electrically connected to the second support plate 270 in eight areas. Join

24 (a) and 24 (b) are enlarged views of an example of the display area B31 (area B11). FIG. 24 (a) is a schematic plan view of a region B31, and FIG. 24 (b) is a schematic cross-sectional view of a region B31. FIG. 24 (b) is a cross-sectional view A2-A2 of FIG. 24 (a). In addition, since other regions B12 to B14 and regions B32 to B34 are the same as the regions B11 and B31, detailed descriptions are omitted.

As shown in FIGS. 24 (a) and 24 (b), a bonding area JA is provided in the area B31. The bonding area JA bonds the first support plate 210 and the second support plate 270 to each other. The bonding region JA is provided on the outer edges of the first support plate 210 and the second support plate 270 in correspondence with the notched portion 253 of the bypass layer 250. The bonding region JA is formed by, for example, laser welding on the side of the second support plate 270. Accordingly, the bonding region JA is formed in a dot shape. The bonding region JA may be formed on the first support plate 210 side. The method for forming the joint region JA is not limited to laser welding, and other methods may be used. The shape of the bonding region JA is not limited to a dot shape, and may be an elliptical shape, a semicircular shape, an angular shape, or the like.

The area of the joint region JA where the first support plate 210 and the second support plate 270 are joined is smaller than the area of the surface 211 (see FIG. 3) of the first support plate 210. The area of the bonding area JA is narrower than the area of the surface 211 minus the area of the heater element 230. In other words, the area of the bonding area JA is narrower than the area of the area that does not overlap the heater element 230 when projected onto a plane parallel to the surface 211 in the first support plate 210. The area of the joint area JA where the first support plate 210 and the second support plate 270 are joined is smaller than the area of the surface 271 (see FIG. 4 (a)) of the second support plate 270. The area of the bonding area JA is narrower than the area of the surface 271 minus the area of the heater element 230. In other words, the area of the bonding area JA is narrower than the area of the area that does not overlap the heater element 230 when projected onto a plane parallel to the plane 271 in the second support plate 270.

The diameter of the dot-shaped joint region JA is, for example, 1 mm (0.5 mm or more and 3 mm or less). On the other hand, the diameters of the first support plate 210 and the second support plate 270 are, for example, 300 mm. The diameters of the first support plate 210 and the second support plate 270 are set in accordance with the object W to be processed. As such, the area of the bonding area JA is much smaller than the area of the surface 211 of the first support plate 210 and the area 271 of the second support plate 270. The area of the bonding area JA is, for example, 1/5000 or less of the area of the surface 211 (the area of the surface 271). Here, the area of the bonding area JA means an area when projected onto a plane parallel to the surface 211 of the first support plate 210 in more detail. In other words, the area of the bonding area JA is an area in a plan view.

In this example, four joint regions JA corresponding to the regions B11 to B14 and B31 to B34 are provided. The number of the bonding areas JA is not limited to four. The number of the bonding regions JA may be an arbitrary number. For example, 12 joint regions JA may be provided on the first support plate 210 and the second support plate 270 every 30 °. Moreover, the shape of the bonding area JA is not limited to a dot shape. The shape of the bonding region JA may be elliptical, angular, or linear. The bonding region JA may be formed in a ring shape along the outer edges of the first support plate 210 and the second support plate 270, for example.

The second support plate 270 has a hole 273 (see FIGS. 4 (b) and 17). On the other hand, the first support plate 210 does not have a hole through the power supply terminal 280. Therefore, the area of the surface 211 of the first support plate 210 is wider than the area of the surface 271 of the second support plate 270.

In the specific example shown in FIG. 21 (a), the heater electrode 239 is arranged so as to draw a slightly circular shape. The heater electrode 239 is disposed in the first region 231, the second region 232, the third region 233, and the fourth region 234. The first region 231 is located at a central portion of the heater element 230. The second region 232 is located outside the first region 231. The third region 233 is located outside the second region 232. The fourth region 234 is located outside the third region 233.

The heater electrode 239 arranged in the first region 231 is not electrically connected to the heater electrode 239 arranged in the second region 232. The heater electrode 239 arranged in the second region 232 is not electrically connected to the heater electrode 239 arranged in the third region 233. The heater electrode 239 arranged in the third region 233 is not electrically connected to the heater electrode 239 arranged in the fourth region 234. In other words, the heater electrodes 239 are arranged in a state independent of each other in a plurality of regions.

For example, the first conductive portion 21 described with reference to FIG. 5 is a heater electrode 239 disposed in the second region 232, and the second conductive portion 22 is a heater electrode 239 disposed in the third region 233. Alternatively, the first conductive portion 21 may be a heater electrode 239 disposed in the third region 233, and the second conductive portion 22 may be a heater electrode 239 disposed in the fourth region 234.

In the specific example shown in FIG. 21 (b), the heater electrode 239 is arranged so as to draw at least a part of a slightly fan shape. The heater electrode 239 is disposed in the first region 231a, the second region 231b, the third region 231c, the fourth region 231d, the fifth region 231e, the sixth region 231f, the seventh region 232a, the eighth region 232b, and the ninth region 232c. With the tenth area 232d, the eleventh area 232e, and the twelfth area 232f. The heater electrode 239 arranged in an arbitrary area is not electrically connected to the heater electrode 239 arranged in another area. In other words, the heater electrodes 239 are arranged in a state independent of each other in a plurality of regions. As shown in FIGS. 21 (a) and 21 (b), the region where the heater electrode 239 is arranged is not particularly limited.

In the specific example shown in FIG. 22, the heater element 230 has more areas. In the heater element 230 of FIG. 20, the first region 231 shown in FIG. 22 (a) is further divided into four regions 231a to 231d. The second area 232 shown in FIG. 22 (a) is further divided into eight areas 232a to 232h. The third region 233 shown in FIG. 22 (a) is further divided into eight regions 233a to 233h. Then, the fourth region 234 shown in FIG. 22 (a) is further divided into 16 regions 234a to 234p. As described above, the number and shape of the regions where the heater element 230 of the heater electrode 239 is arranged may be arbitrary.

As shown in FIG. 23 (a), the bypass portion 251 of the bypass layer 250 has a fan shape. A plurality of fan-shaped bypass portions 251 are arranged separately from each other, and the bypass layer 250 is substantially circular as a whole. As shown in FIG. 23 (a), the separation portion 257 between the adjacent bypass portions 251 extends from the center 259 of the bypass layer 250 in the radial direction. In other words, the separation portion 257 between adjacent bypass portions 251 extends radially from the center 259 of the bypass layer 250. The area of the surface 251a of the bypass portion 251 is wider than the area of the separation portion 257. The area of the bypass layer 250 (the area of the surface 251a of the bypass portion 251) is larger than the area of the heater element 230 (the area of the heater electrode 239).

As shown in FIG. 23 (b), the shape of the plurality of bypass portions 251 of the bypass layer 250 may be a curved fan shape, for example. In this way, the number and shape of the plurality of bypass portions 251 arranged in the bypass layer 250 may be arbitrary.

In the following description regarding FIGS. 20 (a) to 23 (b), the area of the heater element 230 shown in FIG. 21 (a) is taken as an example. The heater electrodes 239 are arranged so as to draw a substantially circular shape, and a plurality of fan-shaped bypass portions 251 are arranged separately from each other. Therefore, when viewed perpendicularly to the surface 251a of the bypass portion 251, the separation portion 257 between the heater electrode 239 and the adjacent bypass portion 251 intersects. When viewed perpendicularly to the surface 251a of the bypass portion 251, the separation between the regions (the first region 231, the second region 232, the third region 233, and the fourth region 234) of the adjacent heater elements 230 The portion 235 intersects a separation portion 257 between the adjacent bypass portions 251.

As shown in FIGS. 20 (a) and 20 (b), each of the imaginary lines connecting the joint portions 255 a to 255 h of the heater element 230 and the bypass layer 250 and the center 203 of the heating plate 200 do not overlap each other. In other words, the joint portions 255 a to 255 h of the heater element 230 and the bypass layer 250 are arranged in mutually different directions as viewed from the center 203 of the heating plate 200. As shown in FIG. 20 (b), the power supply terminal 280 exists on an imaginary line connecting each of the joint portions 255 a to 255 h and the center 203 of the heating plate 200.

The bonding portions 255 a and 255 b are portions where the heater electrode 239 disposed in the first region 231 and the bypass layer 250 are bonded. The joint portions 255 a and 255 b correspond to the first region 231. Either the joining portion 255 a or the joining portion 255 b is a portion where a current flows into the heater element 230. Either the joining portion 255 a or the joining portion 255 b is a portion where a current flows from the heater element 230.

The bonding portions 255c and 255d are portions where the heater electrode 239 disposed in the second region 232 and the bypass layer 250 are bonded. The joint portions 255c and 255d correspond to the second region 232. Either the joining portion 255c or the joining portion 255d is a portion where a current flows into the heater element 230. Either the joining portion 255c or the joining portion 255d is a portion where a current flows from the heater element 230.

The bonding portions 255e and 255f are portions where the heater electrode 239 disposed in the third region 233 and the bypass layer 250 are bonded. The joint portions 255e and 255f correspond to the third region 233. Either the joining portion 255e or the joining portion 255f is a portion where a current flows into the heater element 230. Either the joining portion 255e or the joining portion 255f is a portion where a current flows from the heater element 230.

The bonding portions 255g and 255h are portions where the heater electrode 239 disposed in the fourth region 234 and the bypass layer 250 are bonded. The joint portions 255g and 255h correspond to the fourth region 234. Either the joining portion 255g or the joining portion 255h is a portion where a current flows into the heater element 230. Either the joining portion 255g or the joining portion 255h is a portion where a current flows from the heater element 230.

The joining portions 255a and 255b exist on a circle different from the circle passing through the joining portions 255c and 255d with the center 203 of the heating plate 200 as the center. The joint portions 255 a and 255 b exist on a circle different from the circle passing through the joint portions 255 e and 255 f with the center 203 of the heating plate 200 as a center. The joining portions 255a and 255b exist on a circle different from the circle passing through the joining portions 255g and 255h with the center 203 of the heating plate 200 as the center. The joint portions 255c and 255d exist on a circle different from the circle passing through the joint portions 255e and 255f with the center 203 of the heating plate 200 as the center. The joining portions 255c and 255d exist on a circle different from the circle passing through the joining portions 255g and 255h with the center 203 of the heating plate 200 as the center. The joining portions 255e and 255f exist on a circle different from the circle passing through the joining portions 255g and 255h with the center 203 of the heating plate 200 as the center.

As shown in FIGS. 20 (a) and 20 (b), the heating plate 200 has a lift pin hole 201. In the specific example shown in FIGS. 20 (a) and 20 (b), the heating plate 200 has three ejection pin holes 201. The number of ejection pin holes 201 is not limited to [3]. The power supply terminal 280 is disposed in a region on the side of the center 203 of the heating plate 200 as viewed from the ejection pin hole 201.

According to this specific example, since the heater electrode 239 is arranged in a plurality of regions, the temperature in the plane of the processing object W can be controlled independently for each region. According to this, the temperature (temperature controllability) in the surface of the processing target W can be intentionally distinguished.

25 (a) and 25 (b) are schematic diagrams illustrating the shape of the surface of the heating plate according to this embodiment. FIG. 25 (a) is a graph illustrating an example of a result of measuring the shape of the surface 271 of the second support plate 270 by the present inventor. FIG. 25 (b) is a schematic cross-sectional view illustrating the shape of the surface of the heating plate 200 according to this embodiment.

As described above, the components of the heating plate 200 are pressure-bonded in a laminated state. At this time, as shown in FIG. 25 (b), the first unevenness is generated on the surface 211 (top surface) of the first support plate 210. And a second unevenness is generated on the surface 271 (bottom surface) of the second support plate 270. In addition, a third unevenness is generated on the surface 213 (bottom surface) of the first support plate 210. A fourth unevenness is generated on the surface 275 (top surface) of the second support plate 270.

The inventors measured the shape of the surface 271 of the second support plate 270. An example of the measurement result is shown in FIG. 25 (a). As shown in FIGS. 25 (a) and 25 (b), the shape of the surface 211 (top surface) of the first support plate 210 and the shape of the surface 271 of the second support plate 270 are modeled after the shape of the heater element 230 or the heater Configuration of the element 230. The shape of the heater element 230 refers to the thickness of the heater element 230 and the width of the heater element 230 (the width of the heater electrode 239).

The distance D1 in the Z direction between the recessed portion 211a (the first uneven recessed portion 211a) of the surface 211 of the first support plate 210 and the recessed portion 271a (the second uneven recessed portion 271a of the surface) of the second support plate 270 The distance D2 in the Z direction between the convex portion 211b (the first uneven convex portion 211b) of the surface 211 of the support plate 210 and the convex portion 271b (the second uneven convex portion 271b) of the surface 271 of the second support plate 270 is short. .

The distance D3 in the Z direction between the concave portion 211a of the surface 211 of the first support plate 210 and the convex portion 211b of the surface 211 of the first support plate 210 ) Is shorter than the distance D4 in the Z direction between the recessed portion 271a of the surface 271 of the second support plate 270 and the convex portion 271b of the surface 271 of the second support plate 270 (the height of the unevenness of the surface 271 of the second support plate 270: the second unevenness Height) is short. That is, the uneven height (the height of the first unevenness) of the surface 211 of the first support plate 210 is lower than the uneven height (the height of the second unevenness) of the surface 271 of the second support plate 270.

The distance D8 in the Z direction between the concave portion 213a of the surface 213 of the first support plate 210 and the convex portion 213b of the surface 213 of the first support plate 210 (the height of the unevenness of the surface 213 of the first support plate 210) is greater than that of the second support plate The distance D9 (the height of the unevenness of the surface 275 of the second support plate 270) in the Z direction between the concave portion 275a of the surface 275 of the 270 and the convex portion 275b of the surface 275 of the second support plate 270 is short. That is, the uneven height of the surface 213 of the first support plate 210 is lower than the uneven height of the surface 275 of the second support plate 270.

The width of the recessed portion 271a of the surface 271 of the second support plate 270 is the same as the width of the region between the heater electrode 239 (for example, the first conductive portion 21) and the resin portion 223 (for example, the first resin portion 221). The width of the recessed portion 271a of the surface 271 of the second support plate 270 is, for example, 0.25 times or more and 2.5 times or less the width of a region between the adjacent heater electrode 239 and the resin portion.

The width of the convex portion 271 b of the surface 271 of the second support plate 270 is, for example, the same as the width of the heater electrode 239 or the same as the width of the resin portion 223. The width of the convex portion 271 b of the surface 271 of the second support plate 270 is, for example, 0.8 times or more and 1.2 times or less the width of the heater electrode 239.

Further, the uneven height D4 of the surface 271 of the second support plate 270 is the same as the thickness of the heater element 230 (the thickness of the heater electrode 239) or the same as the thickness of the resin portion 223. The uneven height D4 of the second support plate 270 is, for example, 0.8 times or more and 1.2 times or less the thickness of the heater element 230.

Similarly, the width of the recessed portion 211a of the surface 211 of the first support plate 210 is the same as the width of the region between the heater electrode 239 (for example, the first conductive portion 21) and the resin portion 223 (for example, the first resin portion 221). The width of the convex portion 211 b of the surface 211 of the first support plate 210 is the same as the width of the heater electrode 239 or the width of the resin portion 223. On the other hand, the uneven height D3 of the surface 211 of the first support plate 210 is lower than the thickness of the heater element 230.

The height of the surface 271 of the second support plate 270 gradually changes from the convex portion 271b to the adjacent concave portion 271a. The height of the surface 271 of the second support plate 270 decreases continuously from, for example, the center in the width direction of the convex portion 271 b toward the center in the width direction of the adjacent concave portion 271 a. The center in the width direction of the convex portion 271 b refers to a position that overlaps the center of the width direction of the heater electrode 239 in the surface 271 in the Z direction in more detail, or the center in the width direction of the resin portion 223 in the surface 271 The position overlapping in the Z direction. The center in the width direction of the recessed portion 271 a refers to a position in which the center in the width direction of the region between the adjacent heater electrode 239 and the resin portion 223 in the surface 271 overlaps in the Z direction in more detail.

In this way, the height of the surface 271 of the second support plate 270 changes to a wave having a portion overlapping the heater electrode 239 or the resin portion 223 as a vertex and a portion not overlapping the heater electrode 239 or the resin portion 223 as a wave at the lowest point. shape. Similarly, the height of the surface 211 of the first support plate 210 is changed such that a portion overlapping the heater electrode 239 or the resin portion 223 is taken as a vertex, and a portion not overlapping the heater electrode 239 or the resin portion 223 is taken as a lowest point. Wavy.

According to this embodiment, since the surface 211 of the first support plate 210 has the first unevenness, the bonding area between the first support plate 210 and the heater element 230 can be further enlarged, and the first support plate 210 and the heater element can be increased. Adhesive strength between 230. In addition, with the first unevenness, the bonding area between the first support plate 210 and the adhesive 403 can be further enlarged. Accordingly, the bonding strength between the first support plate 210 and the adhesive 403 can also be improved. Moreover, since the first support plate 210 has irregularities, the rigidity of the first support plate 210 is increased. Therefore, even if the first support plate 210 is thin, warpage or deformation of the heating plate 200 can be reduced. According to this, for example, [reduction in warpage of heating plate], which is generally in a contradictory relationship, and [reduction in heat capacity], which affects high yield, can coexist. In addition, since the surface 271 of the second support plate 270 has the second unevenness, the bonding area between the second support plate 270 and the bypass layer 250 can be further enlarged, and the space between the second support plate 270 and the bypass layer 250 can be increased. The adhesion strength. In addition, the second unevenness can further increase the bonding area between the second support plate 270 and the adhesive 403. Accordingly, the bonding strength between the second support plate 270 and the adhesive 403 can be increased. In addition, since the second support plate 270 has unevenness, the rigidity of the second support plate 270 is increased. Therefore, even if the second support plate 270 is thin, warpage or deformation of the heating plate 200 can be reduced. According to this, for example, [reduction in warpage of heating plate], which is generally in a contradictory relationship, and [reduction in heat capacity], which affects high yield, can coexist. Furthermore, since the surface 211 of the first support plate 210 has the first unevenness, the distance between the heater element 230 and the processing target W can be further shortened. This makes it possible to increase the speed of increasing the temperature of the processing target W.

The heights of the first and second irregularities can be controlled by, for example, pressure-bonding conditions or the constitution (material, etc.) of the laminated body.

In addition, since the heater element 230 generates heat, thermal strain is easily generated in the heater element 230 itself. On the other hand, in the specific example shown in FIG. 25 (b), the unevenness (strain) in the first support plate 210 on the heater element 230 side is larger than that in the second support plate 270 on the bypass layer 250 side. The unevenness (strain) is small. By reducing the strain of the structure on the heater element 230 side where thermal strain easily occurs, it is possible to suppress the load applied to the entire heating plate by the stress due to the thermal strain.

26 (a) and 26 (b) are schematic cross-sectional views showing an electrostatic chuck according to a modification of the embodiment. FIG. 26 (a) is a schematic sectional view showing an electrostatic chuck according to a modification of the embodiment. FIG. 26 (b) is a schematic cross-sectional view showing a heating plate according to this modification. 26 (a) and 26 (b) correspond to, for example, schematic cross-sectional views taken along a cutting plane A1-A1 shown in FIG. 1.

The electrostatic chuck 10a shown in FIG. 26 (a) includes a ceramic dielectric substrate 100, a heating plate 200a, and a bottom plate 300. The ceramic dielectric substrate 100 and the base plate 300 are as described above with reference to FIGS. 1 and 2.

As shown in FIG. 26 (b), the heating plate 200a of this specific example includes a plurality of heater elements. The heating plate 200a shown in FIG. 26 (b) includes a first resin layer 220, a first heater element (heat generating layer) 230a, a second resin layer 240, a second heater element (heat generating layer) 230b, and a third resin. Layer 260, bypass layer 250, fourth resin layer 290, and second support plate 270.

The first resin layer 220 is disposed between the first support plate 210 and the second support plate 270. The first heater element 230 a is disposed between the first resin layer 220 and the second support plate 270. The second resin layer 240 is disposed between the first heater element 230 a and the second support plate 270. The second heater element 230b is disposed between the second resin layer 240 and the second support plate 270. The third resin layer 260 is disposed between the second heater element 230 b and the second support plate 270. The bypass layer 250 is disposed between the third resin layer 260 and the second support plate 270. The fourth resin layer 290 is disposed between the bypass layer 250 and the second support plate 270. That is, in this specific example, the first heater element 230a is disposed in a state independent of a layer different from the second heater element 230b.

Materials, thicknesses, and functions of the first support plate 210, the first resin layer 220, the second resin layer 240, the third resin layer 260, the bypass layer 250, and the second support plate 270 About FIGS. 3 to 5 and 15 As before. Respective materials, thicknesses, and functions of the first heater element 230a and the second heater element 230b are the same as those of the aforementioned heater element 230 with reference to FIGS. 3 to 5. The fourth resin layer 290 is the same as the aforementioned first resin layer 220 with respect to FIGS. 3 to 5.

The heating plate 200 a includes a resin portion 223 (not shown in FIG. 26) like the heating plate 200 described with reference to FIG. 6 and the like. Each resin portion 223 is disposed between two adjacent heater electrodes of the first heater element 230a and between two adjacent heater electrodes of the second heater element 230b.

According to this modification, since the first heater element 230a is independently arranged in a different layer from the second heater element 230b, the temperature in the plane of the processing object W can be controlled independently for each predetermined region.

27 (a), 27 (b), and 28 are schematic plan views showing a modified example of the first support plate of the present embodiment. FIG. 29 is a schematic sectional view showing a heating plate according to this modification. FIG. 27 (a) shows an example in which the first support plate is divided into a plurality of support portions. 27 (b) and FIG. 28 show another example of the first support plate being divided into a plurality of support portions.

In FIG. 29, for convenience of explanation, a graph showing the temperatures of the top surfaces of the heating plate and the first support plate shown in FIG. 27 (a) is also displayed. The graph shown in FIG. 29 is an example of the temperature of the top surface of the first support plate. The horizontal axis of the graph shown in FIG. 29 indicates the position of the top surface of the first support plate 210a. The vertical axis of the graph shown in FIG. 29 indicates the temperature of the top surface of the first support plate 210a. In addition, in FIG. 29, for convenience of explanation, the resin portion 223, the bypass layer 250, and the third resin layer 260 are omitted.

In the modification shown in FIGS. 27 (a) and 27 (b), the first support plate 210a is divided into a plurality of support portions. More specifically, in the modification shown in FIG. 27 (a), the first support plate 210a is concentrically divided into a plurality of support portions, and includes a first support portion 216, a second support portion 217, and a third The support portion 218 and the fourth support portion 219. In the modification shown in FIG. 27 (b), the first support plate 210b is concentrically and radially divided into a plurality of support portions, and includes a first support portion 216a, a second support portion 216b, and a third support portion. 216c, fourth support 216d, fifth support 216e, sixth support 216f, seventh support 217a, eighth support 217b, ninth support 217c, tenth support 217d, and eleventh support 217e And twelfth support 217f.

In the modification shown in FIG. 28, the first support plate 210 c has more support portions. In the first support plate 210c of FIG. 26, the first support portion 216 shown in FIG. 27 (a) is further divided into four support portions 216a to 216d. The second support portion 217 shown in FIG. 27 (a) is further divided into eight support portions 217a to 217h. The third support portion 218 shown in FIG. 27 (a) is further divided into eight regions 218a to 218h. Furthermore, the fourth support portion 219 shown in FIG. 27 (a) is further divided into 16 support portions 219a to 219p. In this way, the number and shape of the support portions arranged on the first support plate 210 may be arbitrary.

Each of the first resin layer 220, the heater element 230, the second resin layer 240, the bypass layer 250, the third resin layer 260, the second support plate 270, and the power supply terminal 280 is as described above with reference to FIGS. 3 to 5 and 15 .

In the following description regarding FIGS. 27 (a) to 29, the first support plate 210a shown in FIG. 27 (a) is taken as an example. As shown in FIG. 29, the first support portion 216 is disposed above the first region 231 of the heater element 230 and corresponds to the first region 231 of the heater element 230. The second support portion 217 is disposed above the second region 232 of the heater element 230 and corresponds to the second region 232 of the heater element 230. The third support portion 218 is disposed above the third region 233 of the heater element 230 and corresponds to the third region 233 of the heater element 230. The fourth support portion 219 is disposed above the fourth region 234 of the heater element 230 and corresponds to the fourth region 234 of the heater element 230.

The first support portion 216 is not electrically engaged with the second support portion 217. The second support portion 217 is not electrically engaged with the third support portion 218. The third support portion 218 is not electrically engaged with the fourth support portion 219.

According to this modification, a radial temperature difference (temperature controllability) may be intentionally provided in the plane of the first support plates 210a, 210b, and 210c. For example, as shown in the graph shown in FIG. 29, a temperature difference may be provided in a stepwise manner from the first support portion 216 to the fourth support portion 219. According to this, a temperature difference (temperature controllability) can be intentionally provided in the surface of the processing target W.

The structure of the heating plate 200 according to this embodiment will be further described with reference to the drawings. 30 (a) to 30 (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. FIG. 30 (a) shows a part of the heater element 230, and FIG. 30 (b) shows a part of the bypass layer 250. 30 (c) shows a part of the heater element 230 and the bypass layer 250, and FIG. 30 (d) shows a modified example of the heater element 230 and the bypass layer 250. As shown in FIGS. 30 (a) and 30 (c), each of the heater electrodes 239 has a first surface P1 (top surface) and a second surface P2 (bottom surface). For example, the first conductive portion 21 has a top surface 21U (first surface P1) and a bottom surface 21L (second surface P2).

The width W1 of the first surface P1 is different from the width W2 of the second surface P2. The width W1 of the first surface P1 is narrower than the width W2 of the second surface P2 in this example. That is, the width of the heater electrode 239 becomes narrower as it goes upward (on the ceramic dielectric substrate 100 side).

As shown in FIGS. 30 (b) and 30 (c), the bypass portion 251 (bypass layer 250) includes a third conductive portion 23 and a fourth conductive portion 24. The fourth conductive portion 24 is separated from the third conductive portion 23 in the in-plane direction Dp (for example, the X direction). The third conductive portion 23 and the fourth conductive portion 24 are part of the bypass portion 251.

Each of the bypass portions 251 has a third surface P3 (top surface) and a fourth surface P4 (bottom surface). The third surface P3 faces the second resin layer 240. The fourth surface P4 faces the opposite side from the third surface P3. That is, the fourth surface P4 faces the third resin layer 260.

The width W3 of the third surface P3 is different from the width W4 of the fourth surface P4. The width W3 of the third surface P3 is narrower than the width W4 of the fourth surface P4 in this example. That is, the width of the bypass portion 251 becomes narrower as it goes upward (on the ceramic dielectric substrate 100 side). In this example, the magnitude relationship between the width of the third surface P3 to the fourth surface P4 is the same as the magnitude relationship of the width of the first surface P1 to the second surface P2.

Each bypass portion 251 has a pair of side surfaces SF2 connecting the third surface P3 and the fourth surface P4. Each side surface SF2 is, for example, a concave curved surface. Each side surface SF2 may be planar, for example. The angle θ3 formed by the third surface P3 and the side surface SF2 is different from the angle θ4 formed by the fourth surface P4 and the side surface SF2. The surface roughness of the side surface SF2 is rougher than that of at least one of the third surface P3 and the fourth surface P4.

The heating plate 200 further includes a resin portion 224. The resin portion 224 is disposed between the third conductive portion 23 and the fourth conductive portion 24. In other words, the resin portion 224 is disposed between each of the bypass portions 251. The resin portion 224 is filled between the bypass portions 251. The material of the resin portion 224 is different from that of the second resin layer 240. The material of the resin portion 224 is different from that of the third resin layer 260. The composition of the resin portion 224 is different from the composition of the second resin layer 240 and the third resin layer 260. The thermal history of the resin portion 224 is different from the thermal history of the second resin layer 240 and the third resin layer 260. The physical properties (for example, melting point, glass transition point, etc.) of the resin portion 224 are different from those of the second resin layer 240 and the third resin layer 260.

For example, when the resin portion 224 contains a component different from that contained in the second resin layer 240, the material of the resin portion 224 is different from that of the second resin layer 240. Even in the case where the resin portion 224 contains the same component as that of the second resin layer 240, the composition ratio (concentration) of the component in the resin portion 224 is different from the composition ratio (concentration) of the component in the second resin layer 240. In this case, the material of the resin portion 224 is also different from that of the second resin layer 240. Further, for example, even when the second resin layer 240 includes a plurality of layers, the material of the resin portion 224 is different from the material of the second resin layer 240 when at least one of the materials of the plurality of layers is different from the material of the resin portion 224. The glass transition point (or melting point) of the resin portion 224 is, for example, lower than the glass transition point (or melting point) of the second resin layer 240. The same applies to the case where the material of the resin portion 224 is different from that of the third resin layer 260. For example, a polyimide film, a foaming adhesive sheet, an adhesive containing silicone or an epoxy resin, and the like can be used.

As the resin portion 224, for example, polyimide, polysiloxane, epoxy resin, acrylic, or the like is used. For example, a polyimide film, a foaming adhesive sheet, an adhesive containing silicone or an epoxy resin, and the like can be used.

The third surface P3 contacts, for example, the second resin layer 240. The fourth surface P4 contacts, for example, the third resin layer 260.

In the electrostatic chuck 10, the magnitude relationship between the width of the third surface P3 and the fourth surface P4 is the same as the magnitude relationship between the width of the first surface P1 and the second surface P2. In the electrostatic chuck 10, the widths of the first surface P1 and the third surface P3 are narrower than the widths of the second surface P2 and the fourth surface P4. In this case, unevenness in the heat distribution in the Z direction can be more suppressed.

In addition, in FIGS. 30 (a) to 30 (c), a heater element 230 is disposed on the bypass layer 250. Not limited to this, for example, as shown in FIG. 30 (d), a bypass layer 250 may be provided on the heater element 230.

31 (a) to 31 (d) are cross-sectional views showing a part of a modification of the heating plate of the present embodiment. As shown in FIGS. 31 (a) and 31 (c), in this example, the width W1 of the first surface P1 is wider than the width W2 of the second surface P2. That is, the width of the heater electrode 239 becomes narrower as it goes downward (on the bottom plate 300 side). Similarly, as shown in FIGS. 31 (b) and 31 (c), the width W3 of the third surface P3 is wider than the width W4 of the fourth surface P4. The width of the bypass portion 251 becomes narrower as it goes downward.

In this example, the relationship between the width of the third surface P3 and the fourth surface P4 is the same as the relationship of the width of the first surface P1 and the second surface P2. The width of the second surface P2 and the fourth surface P4 is wide. In this case, it is easy to retain heat in the first surface P1 and the third surface P3 side, and it is easy to cool down the heat in the second surface P2 and the fourth surface P4 side, which can further improve the temperature traceability. Further, as shown in FIG. 31 (d), the bypass layer 250 may be disposed on the heater element 230.

32 (a) to 32 (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. As shown in FIGS. 32 (a) and 32 (c), in this example, the width W1 of the first surface P1 is narrower than the width W2 of the second surface P2. On the other hand, as shown in FIGS. 32 (b) and 32 (c), the width W3 of the third surface P3 is wider than the width W4 of the fourth surface P4. In this example, the magnitude relationship of the width of the third surface P3 to the fourth surface P4 is opposite to the magnitude relationship of the width of the first surface P1 to the second surface P2.

In this way, the magnitude relationship between the width of the third surface P3 and the fourth surface P4 may be opposite to the magnitude relationship between the width of the first surface P1 and the second surface P2. In this case, the direction of the stress applied due to the thermal expansion of the bypass layer 250 and the direction of the stress applied due to the thermal expansion of the heater element 230 can be reversed. This makes it possible to further suppress the influence of stress. In addition, as shown in FIG. 32 (d), the bypass layer 250 may be disposed on the heater element 230.

33 (a) to 33 (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. As shown in FIGS. 33 (a) to 33 (c), the width W1 of the first surface P1 is wider than the width W2 of the second surface P2, and the width W3 of the third surface P3 is narrower than the width W4 of the fourth surface P4. Yes. Moreover, as shown in FIG. 33 (d), the bypass layer 250 may be disposed on the heater element 230.

34 (a) and 34 (b) are explanatory diagrams showing an example of a simulation result of a heating plate. FIG. 34 (a) shows a part of a heater pattern of the heater electrode 239 used in the simulation. Fig. 34 (b) is a cross-sectional view showing an example of a simulation result. CAE (Computer Aided Engineering) analysis was performed on the calorific value when a current was passed to the heater electrode 239 shown in FIG. 34 (a) during the simulation. In FIG. 34 (b), the analysis result of the calorific value is shown by the shaded shades. In FIG. 34 (b), the shaded portions of the hatched line indicate where the temperature is low, and indicate that the temperature becomes higher as the temperature becomes thicker.

In the simulation, a CAE analysis was performed on a hot spot HSP in which the temperature of the heater electrode 239 easily increased. Figure 34 (b) shows the G1-G2 line section of the hot spot HSP. In addition, the bypass layer 250 is disposed between the ceramic dielectric substrate 100 and the heater element 230 in a simulation model. In addition, the first resin layer 220, the second resin layer 240, and the third resin layer 260 are conveniently integrated into a single layer (polyimide layer) for illustration. The width of the heater electrode 239 is set to be constant in the simulation. That is, the width W1 of the first surface P1 and the width W2 of the second surface P2 are substantially the same in the simulation.

The hot spot HSP is located on the outermost periphery of the slightly circular heating plate 200. The hot spot HSP is the part where the curvature is reversed from the other parts. The inner part of the arc in the hot spot HSP faces the outer peripheral side of the heating plate 200.

The heater electrode 239 bent in an arc shape has a shorter path on the inner side than the outer side, and the electric resistance is also low. Therefore, in the arc-shaped heater electrode 239, the current density is higher on the inner side than on the outer side, and the temperature also tends to be higher. Therefore, as shown in FIG. 34 (b), the temperature of the outer peripheral side of the heating plate 200 inside the arc in the hot spot HSP is higher than that of the center side. Moreover, in the hot spot HSP, since the curvature is reversed from other parts, it is relatively easy for a current to flow to a part with a large diameter on the center side. Therefore, the hot spot HSP is likely to rise in temperature compared to other parts.

As described above, in the heater electrode 239 that is curved in an arc shape, unevenness occurs in the temperature distribution between the inner portion and the outer portion. Due to this uneven temperature distribution, thermal strain is generated in the heater electrode 239. In this case, for example, by providing a space portion at a side end portion of the first conductive portion 21, the stress applied to the first resin layer 220 and the second resin layer 240 due to such thermal strain can be reduced.

Further, as shown in FIG. 34 (b), the temperature of the ceramic dielectric substrate 100 side (upper side) is higher than that of the base plate 300 side (lower side) in the heater electrode 239. This is due to the heat dissipation to the bottom plate 300 side. For example, in a case where a portion where the temperature is high immediately above the heater electrode 239 is locally generated, as shown in FIG. 30 (a) and the like, the width W1 of the first surface P1 is narrower than the width W2 of the second surface P2. Accordingly, as described above, unevenness in the heat distribution in the Z direction can be suppressed. For example, it is possible to suppress local generation of a portion having a high temperature directly above the heater electrode 239, and it is possible to further improve the uniformity of heat.

35 (a) and 35 (b) are schematic plan views showing a specific example of the power supply terminal of this embodiment. FIG. 35 (a) is a schematic plan view showing a power supply terminal of this specific example. FIG. 35 (b) is a schematic plan view illustrating a method of joining the power supply terminals of this specific example.

The power supply terminal 280 shown in FIGS. 35 (a) and 35 (b) includes a pin portion 281, a lead portion 283, a support portion 285, and a joint portion 287. The pin portion 281 is connected to a member called a socket or the like. The socket is supplied with power from the outside of the electrostatic chuck 10. The lead portion 283 is connected to the pin portion 281 and the support portion 285. The support portion 285 is connected to the lead portion 283 and the joint portion 287. As shown by an arrow C14 shown in FIG. 35 (b), the bonding portion 287 is bonded to the heater element 230 or the bypass layer 250.

The lead portion 283 reduces stress applied to the power supply terminal 280. That is, the pin portion 281 is fixed to the bottom plate 300. On the other hand, the bonding portion 287 is bonded to the heater element 230 or the bypass layer 250. A temperature difference is generated between the base plate 300 and the heater element 230 or the bypass layer 250. Therefore, a difference in thermal expansion occurs between the base plate 300 and the heater element 230 or the bypass layer 250. Therefore, a stress caused by a poor thermal expansion is often applied to the power supply terminal 280. A poor stress due to thermal expansion is applied to, for example, the radial direction of the bottom plate 300. The lead portion 283 can relax this stress. The joining portion 287 is joined to the heater element 230 or the bypass layer 250 by welding, joining by laser light, welding, brazing, or the like.

Examples of the material of the pin portion 281 include molybdenum. Examples of the material of the lead portion 283 include copper. The diameter D5 of the lead portion 283 is smaller than the diameter D8 of the pin portion 281. The diameter D5 of the lead portion 283 is, for example, approximately 0.3 mm to 2.0 mm. Examples of the material of the support portion 285 include stainless steel. The thickness D6 (length in the Z direction) of the support portion 285 is, for example, approximately 0.5 mm or more and 2.0 mm or less. Examples of the material of the joint portion 287 include stainless steel. The thickness D7 (length in the Z direction) of the joint portion 287 is, for example, about 0.05 mm or more and 0.5 mm or less.

According to this specific example, since the diameter D8 of the pin portion 281 is larger than the diameter D5 of the lead portion 283, the pin portion 281 can supply a relatively large current to the heater element 230, and because the diameter D5 of the lead portion 283 is larger than the pin The diameter D8 of the portion 281 is also smaller, so the lead portion 283 is more easily deformed than the pin portion 281, and the position of the pin portion 281 can be moved away from the center of the joint portion 287. According to this, the power supply terminal 280 can be fixed to a member different from the heating plate 200 (for example, the base plate 300).

The support portion 285 is joined to the lead portion 283 and the joint portion 287 by, for example, welding, joining by laser light, welding, brazing, or the like. Accordingly, the stress applied to the power supply terminal 280 can be reduced, and a wider contact area can be secured to the heater element 230 or the bypass layer 250.

FIG. 36 is a schematic exploded view showing a modification of the heating plate according to the present embodiment. As shown in FIG. 36, the bypass layer 250 is disposed between the first support plate 210 and the heater element 230 in this example. More specifically, the bypass layer 250 is disposed between the first support plate 210 and the first resin layer 220, and the third resin layer 260 is disposed between the first support plate 210 and the bypass layer 250.

As such, the bypass layer 250 may be disposed between the first support plate 210 and the heater element 230. That is, the bypass layer 250 may be disposed between the heater element 230 and the ceramic dielectric substrate 100.

In this case, it is also possible to improve the diffusivity of the heat supplied from the heater element 230 by the bypass layer 250. For example, the heat diffusivity in the in-plane direction (horizontal direction) of the processing target W can be improved. According to this, for example, the uniformity of the temperature distribution in the plane of the processing target W can be improved.

The bypass layer 250 may be disposed between the first support plate 210 and the heater element 230 and between the heater element 230 and the second support plate 270, for example. That is, the heating plate 200 may have two bypass layers 250 disposed between each of the first support plate 210 and the heater element 230 and between each of the heater element 230 and the second support plate 270.

FIG. 37 is a schematic cross-sectional view showing a modified example of the power supply terminal of this embodiment. In this example, the electrostatic chuck according to the embodiment has a power supply terminal 280a instead of the power supply terminal 280 described above. The power supply terminal 280a includes a power supply section (body section) 281a and a terminal section 281b. The power supply terminal 280a is, for example, a contact probe (c n t a c t p r o b e).

For example, the bottom plate 300 is provided with a hole 390. A cylindrical sleeve 283 a is fixed to the hole 390. The power supply terminal 280a is disposed inside the sleeve 283a, and is fixed to the base plate 300 by, for example, screwing.

The power supply unit 281 a may be connected to a socket 285 a that supplies power to the heater element 230 from the outside. The terminal portion 281b is disposed at the tip of the power supply terminal 280a, and contacts the heater element 230 or the bypass layer 250. The terminal portion 281b is slidable to the power supply portion 281a, and the power supply terminal 280a is retractable. The power feeding terminal 280a has a spring fixed to the power feeding portion 281a inside. The terminal portion 281b is urged by the spring to extend the power supply terminal 280a.

The terminal portion 281b is pressed by the heating plate 200 (the heater element 230 or the bypass layer 250). At this time, the power supply terminal 280a is in a state of contracting against the elastic force of the spring. In other words, the terminal portion 281b is urged to be pressed toward the heater element 230 or the bypass layer 250 by the elastic force of the spring. Accordingly, the socket 285a is electrically connected to the heater element 230 or the bypass layer 250 through the power supply terminal 280a. The heater element 230 or the bypass layer 250 is supplied with power from the outside through the power supply terminal 280a and the socket 285a.

In the case where such a power supply terminal 280a is used, the diameter of a hole (hole 390 of the bottom plate 300 or hole 273 of the second support plate 270) provided for power supply can be reduced compared with a case where the power supply terminal is joined by welding or the like.

FIG. 38 is a schematic cross-sectional view showing a wafer processing apparatus according to another embodiment of the present invention. The wafer processing apparatus 500 according to this embodiment includes a processing container 501, an upper electrode 510, and the electrostatic chuck (for example, the electrostatic chuck 10) as described above with reference to FIGS. 1 to 37. A processing gas introduction port 502 is provided on the top of the processing container 501 for introducing a processing gas into the inside. An exhaust port 503 is provided on the bottom plate of the processing container 501 to exhaust the internal pressure. A high-frequency power source 504 is connected to the upper electrode 510 and the electrostatic chuck 10, and a pair of electrodes having the upper electrode 510 and the electrostatic chuck 10 face each other in parallel at a predetermined interval.

In the wafer processing apparatus 500 related to this embodiment, as soon as a high-frequency voltage is applied between the upper electrode 510 and the electrostatic chuck 10, a high-frequency discharge occurs and is introduced into the processing container 501. The processing gas is activated by the plasma excitation, and the processing object W is processed. In addition, a semiconductor substrate (wafer) can be exemplified as the processing object W. However, the processing target W is not limited to a semiconductor substrate (wafer), and may be, for example, a glass substrate used in a liquid crystal display device.

The high-frequency power source 504 is electrically connected to the bottom plate 300 of the electrostatic chuck 10. The base plate 300 is made of a metal material such as aluminum, as described above. That is, the base plate 300 has conductivity. Accordingly, a high-frequency voltage is applied between the upper electrode 510 and the base plate 300.

In the wafer processing apparatus 500 of this example, the base plate 300 is electrically connected to the first support plate 210 and the second support plate 270. Accordingly, in the wafer processing apparatus 500, a high-frequency voltage is also applied between the first support plate 210 and the upper electrode 510 and between the second support plate 270 and the upper electrode 510.

In this manner, a high-frequency voltage is applied between the support plates 210 and 270 and the upper electrode 510. Accordingly, compared with a case where a high-frequency voltage is applied only between the base plate 300 and the upper electrode 510, the place where the high-frequency voltage is applied can be brought closer to the processing object W. Accordingly, for example, plasma can be generated at a more effective and low potential.

An apparatus having a configuration like the wafer processing apparatus 500 is generally called a parallel plate type RIE (Reactive Ion Etching) apparatus. However, the electrostatic chuck 10 according to the present embodiment is not limited to this apparatus. For example, it can also be widely applied to ECR (Electron Cyclotron Resonance) etching equipment, inductively coupled plasma processing apparatus, spiral wave plasma processing apparatus, and plasma So-called reduced-pressure processing apparatuses such as a separation type plasma processing apparatus, a surface wave plasma processing apparatus, a plasma CVD (plasma Chemical Vapor Deposition) apparatus, and the like. Furthermore, the electrostatic chuck 10 according to the present embodiment can be widely applied to a substrate processing apparatus such as exposure equipment or inspection apparatus that performs processing or inspection under atmospheric pressure. However, considering the high plasma resistance of the electrostatic chuck 10 according to this embodiment, it is preferable to apply the electrostatic chuck 10 to a plasma processing apparatus. In addition, since the well-known structure can be applied to parts other than the electrostatic chuck 10 related to this embodiment within the structure of these devices, the description thereof is omitted.

39 is a schematic cross-sectional view showing a modification of a wafer processing apparatus according to another embodiment of the present invention. As shown in FIG. 39, the high-frequency power source 504 may be electrically connected only between the first support plate 210 and the upper electrode 510, and between the second support plate 270 and the upper electrode 510. In this case, the place where the high-frequency voltage is applied can be brought close to the processing object W, and the plasma can be effectively generated.

FIG. 40 is a schematic cross-sectional view showing a modification of a wafer processing apparatus according to another embodiment of the present invention. As shown in FIG. 40, the high-frequency power source 504 is electrically connected to the heater element 230 in this example. In this way, a high-frequency voltage may be applied between the heater element 230 and the upper electrode 510. In this case, the place where the high-frequency voltage is applied can be brought close to the processing object W, and the plasma can be effectively generated.

The high-frequency power source 504 is electrically connected to the heater element 230 through each power supply terminal 280, for example. For example, a high-frequency voltage is selectively applied to a plurality of regions of the heater element 230 (for example, the first region 231 to the fourth region 234 shown in FIG. 21 (a)). Accordingly, the distribution of the high-frequency voltage can be controlled.

The high-frequency power source 504 may be electrically connected to, for example, the first support plate 210 and the second support plate 270 and the heater element 230. A high-frequency voltage may be applied between each of the first support plate 210 and the upper electrode 510, between the second support plate 270 and the upper electrode 510, and between the heater element 230 and the upper electrode 510.

The embodiment of the present invention has been described above. However, the present invention is not limited to these descriptions. Regarding the form of the aforementioned implementation, those skilled in the art may suitably add design changes as long as they also have the features of the present invention and are included in the scope of the present invention. For example, the shape, size, material, arrangement, etc. of each element included in the heating plate 200, 200a, etc., or the arrangement of the heater element 230, the first heater element 230a, the second heater element 230b, and the bypass layer 250 are not the same. It is limited to examples and can be changed as appropriate. In addition, each element provided in each of the embodiments described above can be technically combined as much as possible, and the combination of these elements is included in the scope of the present invention as long as it also includes the features of the present invention.

10, 10a‧‧‧ electrostatic chuck
21‧‧‧The first conductive part
21a, 21b, 221a, 221b, 222a‧‧‧ side ends
21L‧‧‧Underside
21U‧‧‧Top
22‧‧‧Second conductive section
22a‧‧‧ Third side end
22b‧‧‧ Fourth side end
23‧‧‧ the third conductive part
23a, 23b, 23c‧‧‧ Ministry of Space
24‧‧‧Fourth conductive section
25h‧‧‧Joint
100‧‧‧ceramic dielectric substrate
101‧‧‧First major surface
102‧‧‧Second major surface
107‧‧‧ first dielectric layer
109‧‧‧Second dielectric layer
111‧‧‧electrode layer
113‧‧‧ convex
115‧‧‧ trench
200, 200a‧‧‧ heating plate
201‧‧‧ ejection pin hole
203, 259‧‧‧ Center
210, 210a, 210b, 210c‧‧‧ First support plate
211, 213, 251a, 271, 275‧‧‧ faces
211a, 271a, 275a ‧‧‧ recess
211b, 271b, 275a‧‧‧ convex
216, 216a‧‧‧First support
217, 216b‧‧‧Second support
218, 216c‧‧‧Third support
219, 216d‧‧‧ Fourth support
216e‧‧‧Fifth support
216f‧‧‧ sixth support
217a‧‧‧Seventh support
217b‧eighth support
217c‧‧‧9th support
217d‧‧‧Tenth support
217e‧‧‧ eleventh support
217f‧‧‧Twelfth support
220‧‧‧first resin layer
221‧‧‧First resin department
222‧‧‧Second resin department
223, 224‧‧‧‧Resin Department
230, 230a, 230b ‧‧‧ heater elements
231, 231a
231b, 232‧‧‧Second Zone
231c, 233‧‧‧th third zone
231d, 234‧‧‧‧Fourth Zone
231e‧‧‧Fifth District
231f‧‧‧ Sixth Zone
232a‧‧‧Seventh Zone
232b‧Eighth District
232c‧‧‧Region 9
232d‧‧‧Tenth zone
232e‧‧‧Eleventh District
232f‧‧‧Twelfth Region
235, 257‧‧‧ separated
239‧‧‧heater electrode
240‧‧‧second resin layer
241, 261, 273‧‧‧ holes
250‧‧‧ Bypass
251‧‧‧Bypass
253‧‧‧Notch
255a, 255b, 255c, 255d, 255e, 255f, 255g, 255h
260‧‧‧Third resin layer
270‧‧‧Second support plate
280, 280a‧‧‧ Power supply terminal
290‧‧‧ fourth resin layer
300‧‧‧ floor
301‧‧‧ with access
303‧‧‧ underside
321‧‧‧ entrance
403‧‧‧Adhesive
500‧‧‧wafer processing equipment
501‧‧‧handling container
502‧‧‧Process gas inlet
503‧‧‧ exhaust port
504‧‧‧High-frequency power supply
510‧‧‧upper electrode
B11 ~ B14, B31 ~ B34‧‧‧area
Cp1‧‧‧ Central
D1 ~ D4‧‧‧Distance
D5, D8‧‧‧‧ diameter
D6, D7‧‧‧thickness
Dp‧‧‧ in-plane direction
Ep1, Ep2‧‧‧ end
HSP‧‧‧ Hotspot
JA‧‧‧ Junction Area
L1, L2‧‧‧ length
L8‧‧‧Width
P1‧‧‧First side
P2‧‧‧Second Side
P3‧‧‧ Third Side
P4‧‧‧ Fourth side
Pn1‧‧‧imaginary noodles
Pt1 ~ Pt4‧‧‧ Vertex
R1‧‧‧First Zone
R2‧‧‧Second Zone
R3‧‧‧ third zone
R4‧‧‧Fourth Zone
S1, S2‧‧‧ side
SF1, SF2 ‧‧‧ side
SP1‧‧‧First support
SP2‧‧‧Second Support
SP3‧‧‧Third Support
SP4‧‧‧Fourth Support
W‧‧‧ Handling object

FIG. 1 is a schematic perspective view showing an electrostatic chuck according to this embodiment. 2 (a) and 2 (b) are schematic sectional views showing an electrostatic chuck according to this embodiment. Fig. 3 is a schematic perspective view showing a heating plate according to this embodiment. 4 (a) and 4 (b) are schematic perspective views showing a heating plate according to this embodiment. Fig. 5 is a schematic exploded view showing a heating plate according to this embodiment. Fig. 6 is a sectional view showing a part of the heating plate according to the embodiment. FIG. 7 is a photo image of the heating plate according to this embodiment. Fig. 8 is a sectional view showing a part of the heating plate according to the embodiment. Fig. 9 is a sectional view showing a part of the heating plate according to the embodiment. Fig. 10 is a sectional view showing a part of another heating plate according to the present embodiment. 11 (a) and 11 (b) are cross-sectional views showing a part of a modification of the heating plate of the present embodiment. 12 (a) and 12 (b) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. 13 (a) and 13 (b) are cross-sectional views showing a part of a modification of the heating plate of the present embodiment. 14 (a) to (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. FIG. 15 is a schematic exploded view showing a modification of the heating plate according to the present embodiment. 16 (a) and 16 (b) are schematic cross-sectional views illustrating an example of a manufacturing method according to this embodiment. FIG. 17 is a schematic cross-sectional view illustrating another example of the manufacturing method of the embodiment. FIG. 18 is a schematic exploded view showing an electrostatic chuck according to this embodiment. 19 (a) and (b) are circuit diagrams showing an electrostatic chuck. 20 (a) and 20 (b) are schematic plan views showing a specific example of the heating plate of this embodiment. 21 (a) and 21 (b) are schematic plan views illustrating a heater element of this specific example. FIG. 22 is a schematic plan view illustrating a heater element of this specific example. Figures 23 (a) and (b) are schematic plan views illustrating the bypass layer of this specific example. 24 (a) and (b) are enlarged views schematically showing a part of the heating plate of this specific example. 25 (a) and (b) are schematic diagrams illustrating the shape of the surface of the heating plate according to the present embodiment. 26 (a) and 26 (b) are schematic sectional views showing an electrostatic chuck according to a modification of the embodiment. 27 (a) and (b) are schematic plan views showing a modified example of the first support plate of the present embodiment. FIG. 28 is a schematic plan view showing a modification of the first support plate according to the present embodiment. FIG. 29 is a schematic sectional view showing a heating plate according to this modification. 30 (a) to (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. 31 (a) to (d) are cross-sectional views showing a part of a modification of the heating plate of the present embodiment. 32 (a) to (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. 33 (a) to (d) are cross-sectional views showing a part of a modified example of the heating plate of the present embodiment. 34 (a) and (b) are explanatory diagrams showing an example of a simulation result of a hot plate. 35 (a) and (b) are schematic plan views showing a specific example of the power supply terminal of the present embodiment. FIG. 36 is a schematic exploded view showing a modification of the heating plate according to the present embodiment. FIG. 37 is a schematic cross-sectional view showing a modified example of the power supply terminal of this embodiment. FIG. 38 is a schematic cross-sectional view showing a wafer processing apparatus according to another embodiment of the present invention. 39 is a schematic cross-sectional view showing a modification of a wafer processing apparatus according to another embodiment of the present invention. FIG. 40 is a schematic cross-sectional view showing a modification of a wafer processing apparatus according to another embodiment of the present invention.

10‧‧‧ electrostatic chuck

100‧‧‧ceramic dielectric substrate

200‧‧‧Heating plate

300‧‧‧ floor

301‧‧‧ with access

W‧‧‧ Handling object

Claims (29)

An electrostatic chuck, comprising: a ceramic dielectric substrate on which an object to be processed is placed; a bottom plate disposed at a position separated from the ceramic dielectric substrate in a lamination direction and supporting the ceramic dielectric substrate; And a heating plate disposed between the ceramic dielectric substrate and the base plate, the heating plate having: a first support plate disposed between the ceramic dielectric substrate and the base plate, containing metal; a second support A plate disposed between the first support plate and the bottom plate and containing metal; a first resin layer disposed between the first support plate and the second support plate; a second resin layer disposed between the Between a first resin layer and the second support plate; a resin portion disposed between the first resin layer and the second resin layer; a heater element disposed between the first resin layer and the second resin Between the layers, there are a first conductive portion and a second conductive portion separated from the first conductive portion in an in-plane direction perpendicular to the lamination direction, which generates heat by the flow of current; and a first space portion, which By this first conductive part A first side end portion in the in-plane direction is divided from the first resin layer, the second resin layer, and the resin portion, and the first resin layer is separated from the first conductive portion and the second conductive portion and the The second resin layer is in contact with each other through the resin portion. For example, in the electrostatic chuck according to item 1 of the patent application scope, wherein the first conductive portion has a second side end portion separated from the first side end portion in the in-plane direction, the heating plate has at least the second side An end portion, a second space portion divided by the first resin layer and the second resin layer. For example, in the electrostatic chuck of the first or second scope of the patent application, wherein the length of the first space portion along the lamination direction is equal to or less than the length of the first conductive portion along the lamination direction. For example, the electrostatic chuck according to the first or second scope of the patent application, wherein the first resin layer is separated from the second resin layer between the first conductive portion and the resin portion. For example, in the electrostatic chuck with the scope of the first or second aspect of the patent application, the shape of the first space portion has four vertices in a cross section parallel to the lamination direction. For example, the electrostatic chuck of the first or second scope of the patent application, wherein the first support plate is electrically connected to the second support plate. For example, if the electrostatic chuck of item 1 or item 2 of the patent scope is applied, the area of the area where the first support plate is joined with the second support plate is smaller than the area of the top surface of the first support plate and is smaller than the area of the second support The area of the bottom surface of the board is narrow. For example, the electrostatic chuck of the first or second scope of the patent application, wherein the resin portion includes a material different from that of the first resin layer. For example, if the electrostatic chuck of item 1 or item 2 of the patent scope is applied, the thickness of the first resin layer is equal to or less than the thickness of the first conductive portion. For example, in the electrostatic chuck of the first or second scope of the patent application, wherein the first space portion includes: 的 a central portion in the in-plane direction; and an end portion in the in-plane direction, the central portion is along the laminate. The width in the direction is narrower than the width of the end portion in the lamination direction. For example, in the electrostatic chuck according to item 1 or item 2, the length of the top surface of the first conductive portion along the in-plane direction and the length of the bottom surface of the first conductive portion along the in-plane direction. different. For example, the electrostatic chuck according to item 11 of the application, wherein the length along the in-plane direction of the bottom surface of the first conductive portion is longer than the length along the in-plane direction of the top surface of the first conductive portion. For example, the electrostatic chuck according to item 11 of the application, wherein the length along the in-plane direction of the top surface of the first conductive portion is longer than the length along the in-plane direction of the bottom surface of the first conductive portion. For example, in the electrostatic chuck according to item 1 or item 2 of the patent application scope, in a cross section parallel to the lamination direction, the side surface of the first conductive portion is curved. For example, the electrostatic chuck of the first or second scope of the patent application, wherein an angle between a top surface of the first conductive portion and a side surface of the first conductive portion and a bottom surface of the first conductive portion and the first conductive portion The angles between the sides are different. For example, the electrostatic chuck of the first or second scope of the patent application, wherein a side surface of the first conductive portion is rougher than at least any one of a top surface of the first conductive portion and a bottom surface of the first conductive portion. For example, the electrostatic chuck according to the first or second scope of the patent application, wherein the heater element has a strip-shaped heater electrode, and the heater electrode is arranged in a state independent of each other in a plurality of regions. For example, the electrostatic chuck of the first or second scope of the patent application, wherein the heater element is provided with a plurality of the heater elements, and the plurality of heater elements are provided in a state where the different layers are independent. For example, in the electrostatic chuck of the first or second scope of the patent application, wherein the first support plate includes: a first support portion that is side by side with the first conductive portion in the lamination direction; and a first support portion that is in the lamination direction A second supporting portion in a space portion side by side, the second supporting plate includes: a third supporting portion in parallel with the first conductive portion in the lamination direction; and a first supporting portion in parallel with the first space portion in the laminating direction Four support portions, and a distance between the second support portion and the fourth support portion is shorter than a distance between the first support portion and the third support portion. For example, in the electrostatic chuck of the first or second scope of the patent application, wherein the first support plate includes: a first support portion that is side by side with the first conductive portion in the lamination direction; and a first support portion that is in the lamination direction A second supporting portion in a space portion side by side, the second supporting plate includes: a third supporting portion in parallel with the first conductive portion in the lamination direction; and a first supporting portion in parallel with the first space portion in the laminating direction Four support portions, the distance between the second support portion and the fourth support portion is substantially the same as the distance between the first support portion and the third support portion. For example, the electrostatic chuck of the first or second scope of the patent application, which further includes a conductive bypass layer disposed between the heater element and the second support plate. For example, the electrostatic chuck of the scope of application for patent No. 21, wherein the magnitude relationship between the width of the bottom surface of the bypass layer and the width of the top surface of the bypass layer is related to the width of the bottom surface of the first conductive portion. The relationship between the width of the top surface is the same. For example, the electrostatic chuck of the scope of application for patent No. 21, wherein the magnitude relationship between the width of the bottom surface of the bypass layer and the width of the top surface of the bypass layer is related to the width of the bottom surface of the first conductive portion. The magnitude of the width of the top surface is opposite. For example, in the electrostatic chuck according to the scope of the patent application, the heater element is electrically connected to the bypass layer, and the heater element and the bypass layer are insulated from the first support plate and the second support plate. For example, if the electrostatic chuck of item 1 or item 2 of the patent scope is applied, the area of the top surface of the first support plate is wider than the area of the bottom surface of the second support plate. For example, the electrostatic chuck of the first or second scope of the patent application, which further includes: arranged from the heating plate toward the bottom plate, and supplying power to the power supply terminal of the heating plate. For example, the electrostatic chuck of the scope of application for patent No. 26, wherein the power supply terminal has: 销 a pin portion connected to a socket supplied with external power; a lead portion thinner than the pin portion; a support portion connected to the lead portion; and The support portion is connected to a joint portion to which the heater element is joined. For example, the electrostatic chuck of the scope of patent application No. 21, which is further provided with: a power supply terminal arranged from the heating plate toward the bottom plate, and supplying power to the heating plate, the power supply terminal having: A pin portion; 导线 a lead portion thinner than the pin portion; 支撑 a support portion connected to the lead portion; and a joint portion connected to the support portion and engaged with the bypass layer, supplying the electric power to the heating via the bypass layer器 eleon. For example, the electrostatic chuck of the first or second scope of the patent application, which further includes: a power supply terminal arranged on the bottom plate to supply power to the heating plate, the power supply terminal having: 之 a socket connected to an external power supply socket A power supply part; and a terminal part connected to the power supply part and pressed by the heating plate.