TW201800622A - 具有徑向偏移接觸指的電鍍接觸環 - Google Patents
具有徑向偏移接觸指的電鍍接觸環 Download PDFInfo
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Abstract
用於電子處理器的接觸環具有多餘的接觸指,亦即,比用於接觸基板(諸如半導體晶圓)上的非常窄的邊緣排除區域所需的更多接觸指。接觸指具有稍微不同的長度,使得它們延伸到不同的徑向位置。藉由提供多餘的接觸指,且藉由稍微改變接觸指的長度,足夠數量的接觸指與在邊緣排除區域中的導電表面接觸,以提供良好的電鍍結果。
Description
微電子工件(諸如矽晶圓)的電鍍和電拋光。
微電子工件(諸如矽晶圓)的電鍍和電拋光通常包括將晶圓的導電表面浸入液體電解液的浴中。電流通過電解液,導致電解液中的金屬離子沉積到晶圓的表面上,形成鍍層或膜。與晶圓的導電表面的電連接只能由所謂的邊緣排除區域所製成,如產業標準所規定的。邊緣排除區域是窄的,在現今的產業標準下通常約為3mm,推薦的未來產業標準為2mm或以下。在過去,已經成功地使用具有多個彈簧狀接觸指的接觸環,以當處理標準晶圓時提供與在邊緣排除區域中的晶圓的電連接。
更新的晶圓級封裝(WLP)應用使用光罩設計,其提供少至0.1mm(100微米)的邊緣排除區域的等效寬度。為了在這樣窄的區域進行接觸,需要另光阻的放置(亦即將晶圓置中)、晶圓的尺寸、將晶圓置中在接觸環中、接觸指的製造等必須將公差保持在0.1mm內,以在晶圓所有的周圍進行良好的電接觸。若接觸指只在周圍的部分上接觸暴露的種子層,則差的電接觸將導致差的電鍍均勻性,從而降低裝置的產量。當然,提供一種電鍍設備,其中所有的接觸指可連續地接觸0.1mm的邊緣排除區域是非常困難的。
在類似的WLP電鍍應用中,將晶圓鋸成各個晶粒,其經測試以識別和丟棄有缺陷的晶粒。接著,僅將已知的良好晶粒放置在基板上的模塑複合層中,用於進一步處理,基本上作為重新構造的晶圓。以這種方式,在製造過程中只有已知的良好的晶粒進一步移動。重新構造的晶圓的使用還允許不同類型的晶粒彼此相鄰放置,且在隨後的處理步驟中進行他們之間的電連接。這種方法對於一些製造製程也是有益的,諸如多層RDL(再分配層)扇出(Fan-Out)。通常,重新構成的晶圓上的模塑複合層產生非常小的邊緣排除區域,大約為0.1mm的層級。此外,一些製造製程(例如多層RDL)可能涉及在每個層上邊緣排除為不同的晶圓。這些因素在設計電鍍設備上存在工程上的挑戰。
接觸環具有多餘的接觸指,亦即,比用於接觸非常窄的邊緣排除區域所需的更多接觸指。接觸指可具有稍微不同的長度,使得它們延伸到不同的徑向位置。藉由提供多餘的接觸指,且藉由稍微改變接觸指的長度,足夠數量的接觸指與在邊緣排除區域中的導電表面接觸,以提供良好的電鍍結果。雖然一些接觸手指將通常會錯過邊緣排除區域,但電鍍不受影響。接觸環補償暴露的種子層區域的製造公差,及接觸環接觸本身的製造公差。
如第1圖中所示,且電鍍處理器20具有包括轉子24的頭部22。在頭部22中的馬達28使轉子24旋轉,如第1圖中的箭頭R所示。在轉子24上或可附接到轉子24的環形接觸環30與保持在轉子24中或轉子24上的晶圓100電接觸。轉子24可包括背板26,和用於垂直地移動接觸環30的環形致動器34(以第1圖中的方向T在晶圓裝載/卸載位置和處理位置之間)。頭部22可包括波紋管32,以允許接觸環的垂直或軸向移動,同時密封內部頭部部件離開處理液體和蒸氣。
仍然參考第1圖,頭部22嚙合到框架36上。框架36內的容器或碗38保持電解液。頭部可移動以將保持在轉子24中的晶圓100定位成與容器38中的電解液接觸。一或多個電極定位在容器中。在第1圖中所示的例子具有中心電極40和圍繞中心電極40並且與中心電極40同心的單一外部電極42。電極40和42可設置在二電極材料場成形單元44中,以在處理器20內建立所欲的電場和電流流動路徑。可使用電極的各種數量、類型和配置。
第2圖顯示了從轉子24分離並反轉的接觸環30。因此,當接觸環30安裝到轉子24中時,在接觸環30上共同地標示為82的接觸指(在第2圖中的接觸環30的頂部處或附近顯示)在接觸環30的底端處或附近。安裝凸緣64可設置在接觸環上,用於使用緊固件將接觸環30附接到轉子24。
第3圖顯示了接觸環30的剖面圖,其中接觸環再次以第1圖中所示的垂直定向而安裝。在這個例子中,接觸環30在內襯56和外屏蔽環52之間具有基底環50。現在同樣參照第4圖中,接觸指82的線或條帶附接到基底環50,其中指82向內延伸,每一接觸指對準接觸環的半徑(朝向接觸環30的中心)。
屏蔽件54(若使用的話)覆蓋接觸指82的部分或整個長度。接觸指82經由佈線及/或導電的基底環50及經由在接觸環30上或頭部上的連接器而電連接到處理器電子系統。
轉到第4圖,接觸指82可設置在沖壓金屬的平直條帶68上,以便於製造,其中條帶68附接到基底環50及/或外屏蔽環52。接觸指82可為平坦的和矩形的,且彼此平均地間隔開。接觸環30可具有300至1000個接觸指,其中典型設計使用360或720個接觸指。
如第5圖中所示,接觸指82具有稍微變化的長度,使得它們在邊緣排除區域中名義上具有相應地沿徑向方向稍微變化的降落位置,如第7圖中所示。通常,接觸環30具有從環形基底環徑向向內延伸的接觸指82。接觸環30可具有第一接觸指82A和第二接觸指82B,第一接觸指82A具有第一長度AA,第二接觸指82B具有第二長度BB,其中長度BB小於長度AA通常為0.05或0.1mm至0.2mm的範圍,儘管這個範圍可取決於應用而變化多達0.04至0.5mm。第一和第二接觸指可以交替圖案而佈置,其中每一第一接觸指在兩個第二接觸指之間。
第5圖顯示了包括第三接觸指82C的例子,其中第三接觸指82C具有小於第二長度BB的第三長度CC。在這個例子中,第一、第二和第三接觸指82A、82B和82C以三個重複的叢集而提供。在這個設計中,長度AA可比長度BB長0.1mm,且比長度CC長0.2mm。當然,在相鄰接觸指之間的長度差可在不同的應用中改變,其中在相鄰的接觸指之間的典型差異在從0.05至0.2mm的範圍之間。每一接觸指82可為0.1至0.2mm厚的平坦金屬元件,任選地藉由沖壓未受壓的金屬片原料而形成。接觸指82可設置成最初是平直的,且接觸指82彼此平行的條帶,且當在接觸環30的製造期間安裝到接觸環30中時,條帶成一或多個周圍片段。
在第2圖中所示的例子中,接觸環30具有720個接觸指82,對於具有500A或更大,且更典型地為1000A或更大的種子層的典型WLP製程而言,其遠遠超過繞著周圍的良好均勻性所需要的。接觸環30上的大量接觸指對於非常高的片狀電阻基板上的高級鑲嵌狀製程是必需的。例如,當電鍍在50歐姆/平方的種子層上時,具有720個接觸指是有意義的優點。相比之下,當用於WLP應用中時,具有720個接觸指82的接觸環30提供了多餘的接觸指,亦即,超過實際需要的。修改接觸指的長度(如第5圖中所示)允許在WLP應用中使用接觸環。
例如,若暴露的種子層的預期環形邊緣排除區域在半徑= 148.5mm和148.6mm之間(在300mm晶圓上)(亦即距離晶圓邊緣為1.4mm和1.5mm),則在接觸環30上的相鄰指的範圍可為1.425mm和1.475mm,以擴大接觸降落位置的窗口。每個第三指可任選地具有不同的長度,產生更大的窗口(如,1.4mm;1.45mm;或1.5mm)。這個設計使接觸指的可操作公差加倍,確保在大容量製造環境中所有晶圓上的良好接觸。
接觸環30還可設置有不同長度的各種指,使得單一接觸環可與具有暴露的種子層的各種尺寸的各種類型的晶圓一起使用。在接觸環在與晶圓100一起移入和移出處理器20的晶圓夾盤中的處理系統中,提供如第5和7圖中所示的接觸環30可避免對不同類型的晶圓具有不同組的夾盤,因為接觸環30可用於具有不同邊緣排除區域的晶圓。
第6圖是顯示了在玻璃,塑膠,陶瓷或矽基板106上嵌入模塑複合或環氧樹脂層104中的獨立晶片或晶粒102的重新構造晶圓100的圖。光阻層108覆蓋金屬種子層110,除了在邊緣排除區域112處。種子層110也被施加到模塑複合層104的邊緣處的側壁或斜面上,且被施加到基板106的邊緣上,形成通常在114處顯示的種子層階段。
第6圖顯示了接觸環30上的接觸指82,接觸指82在邊緣排除區域112處接觸種子層110,邊緣排除區域112位於模塑複合層104之上方且在光阻層108的徑向外側。在這個例子中,接觸環還包括覆蓋接觸指並防止電解液接觸接觸指82的環形密封件46。密封件46具有適於密封晶圓100的環形密封表面或邊緣48,或在這種情況下與晶圓100上的光阻層108相抵,且所有的接觸指在環形密封表面的徑向外側。
邊緣排除區域112的寬度(在階段114的頂部上)受到光阻層108和模塑複合層104的定位和同心度的影響,且可根據涉及的重新構造晶圓100的類型而變化。通常,邊緣排除區域為0.1至0.2mm寬。在模塑複合層104的徑向外側的基板106上的種子層延伸部118(如第6圖中的虛線所示)是偶然的降落區域,因為種子層110可能無法維持在階段114之上的連續性。
鑑於以上的討論,一種用於對具有導電邊緣排除區域的晶圓進行電子處理的方法,包括將晶圓放置在具有接觸環的電子處理器中,接觸環具有第一接觸指和第二接觸指,第一接觸指具有第一長度,第二接觸指具有第二長度,第二長度小於第一長度。晶圓的前側被移動成與第一和第二接觸指嚙合,其中第一接觸指接觸在邊緣排除區域中的第一直徑上的晶圓的前側,且其中第二接觸指接觸在邊緣排除區域中的第二直徑上的晶圓的前側,其中第二直徑大於第一直徑。放置晶圓的前側與電解液接觸。電流通過電解液、邊緣排除區域和第一和第二接觸指而傳導。電解液中的金屬離子沉積到導電邊緣排除區域和與其電連接的其它區域上,在晶圓上形成金屬層。
方法還可包括將晶圓與接觸環對準,使得第二直徑置中在邊緣排除區域中。相對於在模塑複合層上具有種子層的重新構造晶圓和在種子層上的光阻層進行電子處理,第一長度和第二長度之間的差值可大於邊緣排除區域的寬度。取決於機械公差的累積,一些第二接觸指可接觸環形種子層延伸部而不是邊緣排除區域。在使用第一、第二和第三接觸指的設計中,第二接觸指可經調整標稱尺寸,以接觸邊緣排除區域,而第三接觸指經調整標稱尺寸以使得環形種子層延伸部徑向接觸邊緣排除區域的外側。
20‧‧‧處理器
22‧‧‧頭部
24‧‧‧轉子
26‧‧‧背板
28‧‧‧馬達
30‧‧‧接觸環
32‧‧‧波紋管
34‧‧‧環形致動器
36‧‧‧框架
38‧‧‧容器
40‧‧‧電極
42‧‧‧電極
44‧‧‧二電極材料場成形單元
46‧‧‧密封件
48‧‧‧邊緣
50‧‧‧基底環
52‧‧‧外屏蔽環
54‧‧‧屏蔽件
56‧‧‧內襯
64‧‧‧安裝凸緣
68‧‧‧條帶
82‧‧‧接觸指/指
82A‧‧‧接觸指
82B‧‧‧接觸指
82C‧‧‧接觸指
100‧‧‧晶圓
102‧‧‧晶粒
104‧‧‧模塑複合層/環氧樹脂層
106‧‧‧基板
108‧‧‧光阻層
110‧‧‧種子層
112‧‧‧邊緣排除區域
114‧‧‧階段
118‧‧‧種子層延伸部
22‧‧‧頭部
24‧‧‧轉子
26‧‧‧背板
28‧‧‧馬達
30‧‧‧接觸環
32‧‧‧波紋管
34‧‧‧環形致動器
36‧‧‧框架
38‧‧‧容器
40‧‧‧電極
42‧‧‧電極
44‧‧‧二電極材料場成形單元
46‧‧‧密封件
48‧‧‧邊緣
50‧‧‧基底環
52‧‧‧外屏蔽環
54‧‧‧屏蔽件
56‧‧‧內襯
64‧‧‧安裝凸緣
68‧‧‧條帶
82‧‧‧接觸指/指
82A‧‧‧接觸指
82B‧‧‧接觸指
82C‧‧‧接觸指
100‧‧‧晶圓
102‧‧‧晶粒
104‧‧‧模塑複合層/環氧樹脂層
106‧‧‧基板
108‧‧‧光阻層
110‧‧‧種子層
112‧‧‧邊緣排除區域
114‧‧‧階段
118‧‧‧種子層延伸部
第1圖是電鍍處理器的示意圖。
第2圖是第1圖中所示的接觸環的透視圖。
第3圖是第1和2圖中所示的接觸環的放大剖面透視圖。
第4圖是接觸環的放大的底部透視圖。
第5圖是第2-4圖中所示的接觸指的示意性平面圖。
第6圖是第1圖的處理器處理重新構造的晶圓的圖。
第7圖是顯示接觸指降落位置的平面圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
30‧‧‧接觸環
82A‧‧‧接觸指
82B‧‧‧接觸指
82C‧‧‧接觸指
100‧‧‧晶圓
108‧‧‧光阻層
118‧‧‧種子層延伸部
Claims (15)
- 一種用於一電鍍處理器的接觸環,包含: 一環形基底環;複數個第一和第二接觸指,從該環形基底環徑向向內延伸,其中基本上每一第一接觸指具有一第一長度,且其中基本上每一第二接觸指具有一第二長度,且其中該第一長度比該第二長度長0.05至0.5mm。
- 如請求項1所述之接觸環,其中每一第一接觸指在兩個第二接觸指之間。
- 如請求項1所述之接觸環,其中該第一長度比該第二長度長0.1至0.2mm。
- 如請求項3所述之接觸環,進一步包含從該環形基底環徑向向內延伸的複數個第三接觸指,其中基本上每一第三接觸指具有一第三長度,並且該第三長度小於該第二長度。
- 如請求項4所述之接觸環,其中該等接觸指佈置成多個叢集,每一叢集包括一第一接觸指、一第二接觸指和一第三接觸指,其中該第二接觸指位於該第一接觸指和該第三接觸指之間。
- 如請求項1所述之接觸環,進一步包含該接觸環上的一密封件,該密封件具有適於密封一晶圓的一環形密封表面,且所有接觸指在該環形密封表面的徑向外側。
- 如請求項1所述之接觸環,其中該等接觸指電連接到適於連接到一電加工處理器的一連接器。
- 如請求項7所述之接觸環,其中該第一和第二接觸指是藉由沖壓未受壓的金屬片原料而形成的,且其中該沖壓是具有該第一和第二指彼此平行的平直條帶,且其中該第一和第二接觸指的每一者包含具有0.1至0.2mm厚的一平坦金屬元件。
- 一種電子處理設備,包含: 一頭部;一轉子,在該頭部中;一環形接觸環,可附接到該轉子上;一框架,包括一容器,其該中頭部可移動以將該環形接觸環定位在該容器中並離開該容器;複數個第一接觸指,在該接觸環上,其中該等第一接觸指具有一第一長度;複數個第二接觸指,在該接觸環上,其中該等第二接觸指具有小於該第一長度的一第二長度;其中每一第一和第二接觸指對準該接觸環的一半徑。
- 如請求項9所述之設備,其中基本上沒一接觸指為平坦的且為矩形的。
- 如請求項10所述之設備,其中該等接觸指平均地間隔開。
- 如請求項11所述之設備,其中該第一長度比該第二長度大0.05至0.2mm。
- 如請求項12所述之設備,其中該接觸環具有總共300至1000個接觸指。
- 如請求項13所述之設備,進一步包含覆蓋該等接觸指的一環形密封件。
- 一種對具有一導電邊緣排除區域的晶圓進行電子處理的方法,包含以下步驟: 將該晶圓放置在具有一接觸環的一電子處理器中,該接觸環具有至少複數個第一接觸指和複數個第二接觸指,該複數個第一接觸指具有一第一長度,該複數個第二接觸指具有一第二長度,該第二長度小於該的一長度;將該晶圓的一前側移動成與該等第一和第二接觸指嚙合,其中該等第一接觸指接觸在該邊緣排除區域中的一第一直徑上的該晶圓的該前側,且其中該等第二接觸指接觸在該邊緣排除區域中的一第二直徑上的該晶圓的該前側,其中該第二直徑大於該第一直徑;放置該晶圓的該前側與一電解液接觸;及將電流通過該電解液、該邊緣排除區域和該等第一和第二接觸指而傳導。
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