TW201742846A - Glass plate, glass substrate for display and glass substrate for solar cell relating to a glass plate having a lower hydrogen concentration in the surface layer of the glass plate than the inside of the glass plate - Google Patents

Glass plate, glass substrate for display and glass substrate for solar cell relating to a glass plate having a lower hydrogen concentration in the surface layer of the glass plate than the inside of the glass plate Download PDF

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TW201742846A
TW201742846A TW106113406A TW106113406A TW201742846A TW 201742846 A TW201742846 A TW 201742846A TW 106113406 A TW106113406 A TW 106113406A TW 106113406 A TW106113406 A TW 106113406A TW 201742846 A TW201742846 A TW 201742846A
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glass plate
glass
hydrogen concentration
depth
surface layer
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TW106113406A
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TWI717501B (en
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小林大介
鈴木祐一
郎雨生
穴澤阿沙子
谷田正道
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旭硝子股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0055Other surface treatment of glass not in the form of fibres or filaments by irradiation by ion implantation
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00Shaping glass in contact with the surface of a liquid
    • C03B18/02Forming sheets
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The present invention is to provide an excellent glass plate in which alkali metal hardly diffuses on the surface of a glass plate and deterioration of properties of a transparent conductive oxide film can be suppressed. The disclosed glass plate has value represented by (surface hydrogen concentration/internal hydrogen concentration) of 0.80 or less, wherein the surface hydrogen concentration is an average value of the hydrogen concentration between the surface of the glass plate and the depth of 0.5~1.5[mu]m, while the internal hydrogen concentration is the hydrogen concentration within a region between the surface of the glass plate and the depth of 0.5~1.5[mu]m after the glass plate removes its surface down to a thickness of 100[mu]m. However, when the glass plate has a thickness below 0.2mm, the internal hydrogen concentration is the hydrogen concentration within a region between the surface of the glass plate and the depth of 0.5~1.5[mu]m after the glass plate removes half of its thickness.

Description

玻璃板、顯示器用玻璃基板及太陽電池用玻璃基板Glass plate, glass substrate for display, and glass substrate for solar cell

發明領域 本發明涉及一種玻璃板表層之氫濃度比玻璃板內部低的玻璃板、顯示器用玻璃基板及太陽電池用玻璃基板。FIELD OF THE INVENTION The present invention relates to a glass plate having a lower hydrogen concentration in a surface of a glass plate than a glass plate, a glass substrate for a display, and a glass substrate for a solar cell.

發明背景 液晶顯示器或太陽電池等光電轉換元件的課題在於玻璃基板中所含鹼金屬造成的各種特性劣化。舉例來說,玻璃基板中之鹼金屬擴散至形成於玻璃基板上之透明導電性氧化物膜等,會使特性劣化。所以,宜使用實質上不含鹼金屬氧化物之無鹼玻璃基板(專利文獻1)。BACKGROUND OF THE INVENTION A problem with photoelectric conversion elements such as liquid crystal displays and solar cells is that various characteristics caused by alkali metals contained in a glass substrate are deteriorated. For example, the alkali metal in the glass substrate is diffused to a transparent conductive oxide film or the like formed on the glass substrate to deteriorate characteristics. Therefore, an alkali-free glass substrate which does not substantially contain an alkali metal oxide is preferably used (Patent Document 1).

另一方面,因製造成本低廉,故多使用鈉鈣玻璃等含鹼金屬氧化物之鹼性玻璃基板。使用鹼性玻璃基板時,為了讓鹼金屬擴散在最低限度,必須於玻璃基板上形成氧化矽膜、氧化鋁膜、氧化鋯膜、氧化矽與氧化錫之混合氧化物膜等鹼性障壁層,於該鹼性障壁層上形成透明導電性氧化物膜(專利文獻2)。 先前技術文獻 專利文獻On the other hand, since the production cost is low, an alkali glass substrate containing an alkali metal oxide such as soda lime glass is often used. When an alkali glass substrate is used, in order to minimize the diffusion of the alkali metal, it is necessary to form an alkali barrier layer such as a ruthenium oxide film, an aluminum oxide film, a zirconia film, or a mixed oxide film of ruthenium oxide and tin oxide on the glass substrate. A transparent conductive oxide film is formed on the basic barrier layer (Patent Document 2). Prior Technical Literature Patent Literature

專利文獻1:日本專利第3901757號公報 專利文獻2:國際公開第2013/035746號Patent Document 1: Japanese Patent No. 3901757 Patent Document 2: International Publication No. 2013/035746

發明概要 發明欲解決之課題 鹼性玻璃基板含有鹼金屬氧化物。即使是實質上不含鹼金屬氧化物之無鹼玻璃基板,也不得不含有鹼金屬譬如Na等無法避免之不純物,而不可能達成零含量。SUMMARY OF THE INVENTION Problems to be Solved by the Invention An alkaline glass substrate contains an alkali metal oxide. Even an alkali-free glass substrate which does not substantially contain an alkali metal oxide has to contain an alkali metal such as Na which cannot be avoided, and it is impossible to achieve a zero content.

然而,無鹼玻璃或鹼性玻璃基板中所含鹼金屬可能會擴散至形成於玻璃基板上之透明導電性氧化物膜等,使特性劣化。However, the alkali metal contained in the alkali-free glass or the alkali glass substrate may diffuse to the transparent conductive oxide film formed on the glass substrate, etc., and the characteristics may deteriorate.

本發明人等認為,玻璃板中之Si-OH基(矽烷醇基)會成為鹼金屬之傳導途徑,所以在矽烷醇基較多的玻璃板(氫濃度高的玻璃板)會助長鹼金屬從玻璃板內部擴散至玻璃板表面,增加從玻璃板表面擴散至透明導電性氧化物膜之鹼金屬量,從而減弱特性。The present inventors believe that the Si-OH group (stanol group) in the glass plate becomes a conduction route of the alkali metal, so that a glass plate having a large amount of stanol groups (a glass plate having a high hydrogen concentration) promotes the alkali metal from The inside of the glass plate is diffused to the surface of the glass plate to increase the amount of alkali metal diffused from the surface of the glass plate to the transparent conductive oxide film, thereby weakening the characteristics.

爰此,本發明目的在於提供一種藉由減少玻璃板尤其是玻璃板表層之矽烷醇基,使鹼金屬不易擴散至玻璃板表面而得以抑制透明導電性氧化物膜之特性減弱的優異玻璃板。 用以解決課題之手段Accordingly, an object of the present invention is to provide an excellent glass sheet which can suppress the weakening of the characteristics of the transparent conductive oxide film by reducing the stanol group of the surface layer of the glass plate, especially the glass plate, so that the alkali metal does not easily diffuse to the surface of the glass plate. Means to solve the problem

本發明人等累積精闢專研的結果發現,將玻璃板表層附近的氫濃度(表層氫濃度)減低至少於玻璃內部的氫濃度(內部氫濃度),可解決上述課題,進而完成本發明。As a result of the intensive research by the present inventors, it has been found that the above problem can be solved by reducing the hydrogen concentration (surface hydrogen concentration) in the vicinity of the surface layer of the glass sheet to at least the hydrogen concentration (internal hydrogen concentration) in the glass, and the present invention has been completed.

亦即,本發明之玻璃板之以(表層氫濃度/內部氫濃度)所示之值為0.80以下,其中表層氫濃度為玻璃板表面至深度0.5~1.5μm區域中之氫濃度平均值,內部氫濃度係已自前述玻璃板去除表面至深度100μm區域後之玻璃板的表面至深度0.5~1.5μm區域中之氫濃度。惟,玻璃板厚度為0.2mm以下時,內部氫濃度係去除玻璃板一半厚度之深度區域後之玻璃板的表面至深度0.5~1.5μm區域中之氫濃度。 發明效果That is, the glass plate of the present invention has a value of (the surface layer hydrogen concentration/internal hydrogen concentration) of 0.80 or less, wherein the surface layer hydrogen concentration is an average value of the hydrogen concentration in the region from the surface of the glass plate to a depth of 0.5 to 1.5 μm, and the inside thereof. The hydrogen concentration is the concentration of hydrogen in the region from the surface of the glass plate removed to the depth of 100 μm to the depth of 0.5 to 1.5 μm. However, when the thickness of the glass plate is 0.2 mm or less, the internal hydrogen concentration is the hydrogen concentration in the region from the surface of the glass plate after removing the depth region of the half thickness of the glass plate to a depth of 0.5 to 1.5 μm. Effect of the invention

根據本發明,可獲得一種鹼金屬不易擴散至玻璃板表面的玻璃板。所以,以本發明之玻璃板作為譬如顯示器用玻璃基板或太陽電池用玻璃基板使用時,可抑制鹼金屬擴散所致透明導電性氧化物膜的特性減弱等。According to the present invention, a glass plate in which an alkali metal is not easily diffused to the surface of a glass plate can be obtained. Therefore, when the glass plate of the present invention is used as a glass substrate for a display or a glass substrate for a solar cell, it is possible to suppress deterioration of characteristics of the transparent conductive oxide film due to diffusion of an alkali metal.

用以實施發明之形態 以下詳細說明本發明,惟本發明不受以下實施形態限定,可在不脫離本發明主旨之範圍內任意做變更實施。 又,本說明書中表示數值範圍之符號「~」係在包含以其前後記載之數值為下限值及上限值之定義下做使用。MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below, but the present invention is not limited to the following embodiments, and modifications may be made without departing from the spirit and scope of the invention. In addition, in the present specification, the symbol "~" in the numerical range is used in the definition that the numerical values described before and after are defined as the lower limit and the upper limit.

<玻璃板> 本實施形態之玻璃板的特徵在於,以(表層氫濃度/內部氫濃度)所示之值為0.80以下,其中表層氫濃度為玻璃板表面至深度0.5~1.5μm區域(以下有時僅稱為「表層」)中之氫濃度平均值,內部氫濃度係已自玻璃板去除表面至深度100μm區域後之玻璃板的表面至深度0.5~1.5μm區域(以下有時僅稱為「內部」)中之氫濃度。另,不同於表層,內部為氫濃度呈幾乎恆定值之區域。又,玻璃板厚度為0.2mm以下時,內部指去除玻璃板一半厚度之深度區域後之玻璃板的表面至深度0.5~1.5μm區域,且以該內部之氫濃度為內部氫濃度。<Glass plate> The glass plate of the present embodiment is characterized by a value of (the surface layer hydrogen concentration/internal hydrogen concentration) of 0.80 or less, wherein the surface layer hydrogen concentration is a glass plate surface to a depth of 0.5 to 1.5 μm (hereinafter, The average hydrogen concentration in the "surface layer only" is the area where the internal hydrogen concentration has been removed from the surface of the glass plate to the depth of 100 μm to the depth of 0.5 to 1.5 μm (hereinafter sometimes referred to as " The concentration of hydrogen in the interior"). In addition, unlike the surface layer, the inside is an area in which the hydrogen concentration is almost constant. Further, when the thickness of the glass plate is 0.2 mm or less, the inside refers to the surface of the glass plate after the depth region of the half thickness of the glass plate is removed to a depth of 0.5 to 1.5 μm, and the hydrogen concentration inside is the internal hydrogen concentration.

通常將玻璃板應用於製品時,一般會施行某種加工。譬如作為液晶顯示器用玻璃基板使用時,多半會在玻璃板鍍上一層稱作ITO之氧化銦錫(Indium Tin Oxide)化合物之薄膜(ITO膜)。ITO膜之製膜溫度譬如為350℃左右。 習知玻璃板於製膜中或製膜前後經某種加熱步驟後,雖依加熱條件而有所不同,不過玻璃板表面至深度10nm區域中之鹼金屬量都會增加。譬如就Na量來說,在玻璃板表面至深度10nm區域中以飛行時間型二次離子質量分析(time-of-flight secondary ion mass spectrometry)法求得之23 Na/28 Si計數比所示之值的平均值(表層Na計數)會變大。另,玻璃板表面至深度10nm區域係Na偏析顯著的區域。When a glass sheet is usually applied to an article, a certain processing is generally performed. For example, when used as a glass substrate for a liquid crystal display, a thin film (ITO film) of an indium tin oxide (ITO) compound called ITO is often plated on the glass plate. The film formation temperature of the ITO film is, for example, about 350 °C. Conventional glass plates differ in heating conditions depending on the heating conditions after film formation or before and after film formation, but the amount of alkali metal in the surface of the glass plate to a depth of 10 nm increases. For example, in the case of the amount of Na, the 23 Na/ 28 Si count ratio obtained by the time-of-flight secondary ion mass spectrometry in the region of the surface of the glass plate to a depth of 10 nm is shown. The average value of the values (surface Na count) becomes larger. In addition, the surface of the glass plate to the depth of 10 nm is a region where Na segregation is remarkable.

另一方面,本實施形態之玻璃將(表層氫濃度/內部氫濃度)所示之值定為0.80以下,可將熱處理後之表層Na計數減低約3成。 又,(表層氫濃度/內部氫濃度)所示之值若為0.65以下,熱處理後之表層Na計數可減低約5成,故較佳。更宜為0.50以下。 (表層氫濃度/內部氫濃度)所示之值雖然愈小愈好,但要有效減低表層氫濃度有其極限。所以,從易製造玻璃板的觀點來看,本實施形態中(表層氫濃度/內部氫濃度)所示之值宜為0.40以上。On the other hand, in the glass of the present embodiment, the value indicated by (surface hydrogen concentration/internal hydrogen concentration) is set to 0.80 or less, and the surface Na count after heat treatment can be reduced by about 30%. Further, if the value indicated by (surface hydrogen concentration/internal hydrogen concentration) is 0.65 or less, the surface Na count after heat treatment can be reduced by about 50%, which is preferable. More preferably, it is 0.50 or less. Although the value shown in the surface hydrogen concentration/internal hydrogen concentration is as small as possible, there is a limit to effectively reduce the surface hydrogen concentration. Therefore, from the viewpoint of easy production of a glass plate, the value indicated by the surface layer hydrogen concentration/internal hydrogen concentration in the present embodiment is preferably 0.40 or more.

玻璃板中Si-OH基(矽烷醇基)的存在會成為鹼金屬譬如Na之傳導途徑。所以,藉由減少尤其是原本存在於玻璃板表層的矽烷醇基(減低氫濃度),可抑制Na從玻璃板內部擴散至表面。 亦即,藉由減少玻璃板表層之矽烷醇基(減低氫濃度),可防止Na擴散至玻璃板表面,從而可進一步防止Na擴散導致透明導電性氧化物膜之特性減弱等阻礙。The presence of Si-OH groups (stanol groups) in the glass plate can become a conduction pathway for alkali metals such as Na. Therefore, by reducing the stanol group (which reduces the hydrogen concentration) which is originally present on the surface layer of the glass sheet, it is possible to suppress the diffusion of Na from the inside of the glass sheet to the surface. In other words, by reducing the stanol group of the surface layer of the glass sheet (reducing the hydrogen concentration), Na can be prevented from diffusing to the surface of the glass sheet, and further hindrance of Na diffusion causes deterioration of characteristics of the transparent conductive oxide film.

[(表層氫濃度/內部氫濃度)測定方法] (表層氫濃度/內部氫濃度)可利用二次離子質量分析法(Secondary Ion Mass Spectrometry:SIMS)求得。詳細測定方法闡述如下。[Method for Measuring Surface Layer Hydrogen Concentration/Internal Hydrogen Concentration] (Surface hydrogen concentration/internal hydrogen concentration) It can be determined by Secondary Ion Mass Spectrometry (SIMS). The detailed measurement method is explained below.

要以SIMS獲得定量的氫濃度剖面圖時,必須測定已知氫濃度的標準試料,求出用來將計數轉換成濃度的相對感度因子。然而,本實施形態係以(表層氫濃度/內部氫濃度)之比作表示,所以無需求算相對感度因子。(表層氫濃度/內部氫濃度)之算出方法記述如下。In order to obtain a quantitative hydrogen concentration profile by SIMS, it is necessary to measure a standard sample of known hydrogen concentration and determine a relative sensitivity factor for converting the count into a concentration. However, this embodiment is expressed by the ratio of (surface hydrogen concentration/internal hydrogen concentration), so there is no need to calculate the relative sensitivity factor. The method of calculating the surface layer hydrogen concentration/internal hydrogen concentration is described below.

將已切除部分玻璃之評估對象的玻璃板從表面研磨至深度100μm。惟,玻璃板厚度為0.2mm以下時,係研磨玻璃板一半厚度之深度。將未研磨之玻璃板與該經研磨之玻璃板送至SIMS裝置內。 於一次離子使用Cs+ ,取得兩璃板之1 H- 計數及30 Si- 計數的深度方向剖面圖,然後取得以30 Si- 計數將1 H- 計數規格化之1 H- /30 Si- 計數比的深度方向剖面圖。利用1 H- /30 Si- 計數比之深度方向剖面圖求出玻璃板表面至深度0.5~1.5μm的平均1 H- /30 Si- 計數比。The glass plate of the evaluation object from which part of the glass had been cut was ground from the surface to a depth of 100 μm. However, when the thickness of the glass plate is 0.2 mm or less, the depth of the glass plate is half the thickness. The unground glass plate and the ground glass plate are sent to a SIMS device. Used in the primary ion Cs +, made of two glass plates 1 H - count and 30 Si - counting a sectional view in the depth direction, and then to acquire 30 Si - count 1 H - normalization of count 1 H - / 30 Si - Count The profile of the depth direction. Using 1 H - / 30 Si - counting the depth direction than the cross-sectional surface of the glass plate to FIG obtaining an average depth of 1 H 0.5 ~ 1.5μm - / 30 Si - count ratio.

以評估對象之玻璃板表面至深度0.5~1.5μm(表層)的平均1 H- /30 Si- 計數比為「表層氫計數」,且以經研磨100μm之評估對象之玻璃板表面至深度0.5~1.5μm(內部)的平均1 H- /30 Si- 計數比為「內部氫計數」,求出(表層氫計數/內部氫計數)比值。 在此所得(表層氫計數/內部氫計數)之值即為(表層氫濃度/內部氫濃度)之值。 另如前述,玻璃板的內部區域不同於表層,為氫濃度呈幾乎恆定值之區域。所以,為了測定內部氫計數而將玻璃板從表面研磨至深度100μm、或玻璃板厚度為0.2mm以下則研磨玻璃板一半厚度時,即使有譬如±10μm的研磨深度誤差,也可獲得幾乎相同的內部氫計數值。The average 1 H - / 30 Si - count ratio of the surface of the glass plate to the depth of 0.5 to 1.5 μm (surface layer) of the object to be evaluated is "surface hydrogen count", and the surface of the glass plate of the object to be evaluated by grinding 100 μm to a depth of 0.5~ The average 1 H - / 30 Si - count ratio of 1.5 μm (internal) is "internal hydrogen count", and the ratio of (surface hydrogen count / internal hydrogen count) is obtained. The value obtained here (surface hydrogen count / internal hydrogen count) is the value of (surface hydrogen concentration / internal hydrogen concentration). As described above, the inner region of the glass plate is different from the surface layer, and is a region in which the hydrogen concentration is almost constant. Therefore, in order to measure the internal hydrogen count, the glass plate is polished from the surface to a depth of 100 μm, or the thickness of the glass plate is 0.2 mm or less. When the thickness of the glass plate is half, even if there is a grinding depth error of, for example, ±10 μm, almost the same can be obtained. Internal hydrogen count value.

SIMS之測定條件如下。 裝置:ULVAC-PHI, Inc.製 ADEPT1010 一次離子種:Cs+ 一次離子的加速電壓:5kV 一次離子的電流值:500nA 一次離子的入射角:對試料面法線呈60° 一次離子的柵格大小:300×300μm2 二次離子極性:負 二次離子的檢測區域:60×60μm2 (一次離子之柵格大小的4%) 中和槍之使用:有 將橫軸從濺鍍時間轉換成深度之方法:利用觸針式表面形狀測定器(Veeco公司製Dektak150)測定分析凹坑的深度,求出一次離子的濺鍍速率。使用該濺鍍速率,將橫軸從濺鍍時間轉換成深度。 檢測出1 H- 時的場軸電位(Field Axis Potential):最佳值可能依裝置而有所變動。測定者設定數值時必需同時注意有充分阻絕背景值。 測定室的真空度:2.0×10-9 Torr以下The measurement conditions of SIMS are as follows. Device: ADEPT1010 manufactured by ULVAC-PHI, Inc. Primary ion species: Acceleration voltage of Cs + primary ion: 5kV Current value of primary ion: 500nA Incident angle of primary ion: 60° normal to the surface of the sample : 300 × 300 μm 2 Secondary ion polarity: Detection area of negative secondary ions: 60 × 60 μm 2 (4% of the grid size of primary ions) Neutralization gun use: Converting the horizontal axis from sputtering time to depth Method: The depth of the analysis pit was measured by a stylus type surface shape measuring instrument (Dektak 150 manufactured by Veeco Co., Ltd.), and the sputtering rate of the primary ions was determined. Using this sputtering rate, the horizontal axis is converted from sputtering time to depth. Field Axis Potential at 1 H - is detected: the optimum value may vary depending on the device. When the measurer sets the value, it must be noted that the background value is adequately blocked. Vacuum in the measurement chamber: 2.0 × 10 -9 Torr or less

[表層Na計數測定方法] 玻璃板之表層Na計數值可利用飛行時間型二次離子質量分析法(Time-of-Flight Secondary Ion Mass Spectrometry:TOF-SIMS)求算。詳細測定方法闡述如下。另,關於Na以外之鹼金屬亦同樣地可使用TOF-SIMS,求出玻璃板之表層鹼金屬計數值。[Method for Measuring Surface Na Count] The surface Na count value of the glass plate can be calculated by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The detailed measurement method is explained below. Further, in the same manner as the alkali metal other than Na, TOF-SIMS can be used to determine the surface alkali metal count value of the glass plate.

將評估對象之玻璃板及具有已知膜厚之SiO2 膜的Si晶圓送至TOF-SIMS裝置內。於一次離子使用Bi3 ++ 、濺鍍離子使用C60 ++ ,取得23 Na+28 Si+ 計數的深度方向剖面圖後,獲得以28 Si+ 計數將23 Na+ 計數規格化之23 Na+ /28 Si+ 計數比的深度方向剖面圖。 接下來,從具有已知膜厚之SiO2 膜的Si晶圓之16 O+ 計數及28 Si+ 計數的深度方向剖面圖,推估SiO2 膜利用C60 ++ 離子濺鍍的濺鍍速率。使用該濺鍍速率,將評估對象之玻璃板之23 Na+ /28 Si+ 計數比的深度方向剖面圖橫軸從濺鍍時間轉換成深度。然後,求出玻璃表面至10nm深度區域中的平均23 Na+ /28 Si+ 計數比,並以其作為「表層Na計數」之值。The glass plate of the evaluation object and the Si wafer having the SiO 2 film of a known film thickness are sent to the TOF-SIMS device. Primary ion used in Bi 3 ++, ion sputtering using C 60 ++, to obtain 23 Na + 28 Si +, and the depth of the counting direction sectional view obtained in the 28 Si + 23 Na + count, normalization of the counts 23 Na + / 28 Si + count ratio in the depth direction profile. Next, the Si wafer having a known thickness of the SiO 2 film 16 O + count and the depth direction of the cross-sectional view of FIG. 28 Si + count, Collocation SiO 2 film by sputtering rate of C 60 ++ ion sputtering . Using the sputtering rate, the horizontal axis of the 23 Na + / 28 Si + count ratio of the glass plate of the evaluation object was converted from the sputtering time to the depth. Then, the average 23 Na + / 28 Si + count ratio in the glass surface to the depth region of 10 nm was determined and used as the value of "surface Na count".

TOF-SIMS之測定條件如下。 裝置:ION-TOF公司製 TOF.SIMS5 一次離子種:Bi3 ++ 一次離子的加速電壓:25kV 一次離子的電流值:0.1pA(@10kHz) 一次離子的柵格大小:100×100μm2 一次離子模式:高電流電子聚束模式(High current bunching mode) 二次離子極性:正 中和槍之使用:有 濺鍍離子種:C60 ++ 濺鍍離子的加速電壓:10kV 濺鍍離子的電流值:0.8nA(@10kHz) 濺鍍離子的柵格大小:300×300μm2 測定模式:非交錯模式(noninterlaced mode)The measurement conditions of TOF-SIMS are as follows. Device: TOF.SIMS5 manufactured by ION-TOF Co., Ltd. Primary ion species: Bi 3 ++ Acceleration voltage of primary ion: 25kV Current value of primary ion: 0.1pA (@10kHz) Grid size of primary ion: 100×100μm 2 primary ion Mode: High current bunching mode Secondary ion polarity: Medium and gun use: Sputtered ion species: C 60 ++ Accelerated voltage of sputtered ions: 10kV Current value of sputtered ions: 0.8nA (@10kHz) Grid size of sputtered ions: 300 × 300μm 2 Measurement mode: noninterlaced mode

本實施形態之玻璃板可使用各種組成之物。具體上可舉如鋁矽酸鹽玻璃、鈉鈣玻璃、硼矽酸鹽玻璃、鉛玻璃、鹼性鋇玻璃、鋁硼矽酸鹽玻璃、無鹼玻璃等。其中又以含有多量Na之玻璃譬如鈉鈣玻璃或鋁矽酸鹽玻璃為宜,因為對該等玻璃而言可使Na離子不易擴散至玻璃板表面。又,在太陽電池用途上,基於製造成本觀點,以鈉鈣玻璃為宜。此外,本實施形態之玻璃板亦可施行化學強化處理再做使用。譬如,在太陽電池用覆蓋玻璃用途上,基於確保強度的觀點,以業經化學強化之鈉鈣玻璃或鋁矽酸鹽玻璃等玻璃板為宜。The glass plate of this embodiment can use various compositions. Specific examples thereof include aluminosilicate glass, soda lime glass, borosilicate glass, lead glass, basic bismuth glass, aluminoborosilicate glass, and alkali-free glass. Among them, glass containing a large amount of Na such as soda lime glass or aluminosilicate glass is preferable because it is difficult for the glass to diffuse to the surface of the glass plate. Further, in the use of solar cells, soda lime glass is preferred from the viewpoint of production cost. Further, the glass plate of the present embodiment can also be subjected to chemical strengthening treatment and used. For example, in the use of a cover glass for a solar cell, a glass plate such as a soda lime glass or an aluminosilicate glass which is chemically strengthened is preferable from the viewpoint of ensuring strength.

玻璃板中鹼金屬係以無法避免之不純物或藉由積極添加而含有,譬如在液晶顯示器用途或太陽電池用途等鹼金屬會成為降低性能之理由之一的用途上,無鹼玻璃板中鹼金屬含量大於0且1000質量ppm以下較佳。此時,鹼金屬含量為800質量ppm以下較佳,600質量ppm以下更佳。又,從降低玻璃熔融時的黏度而易於製造玻璃的觀點來看,下限較宜為10質量ppm以上。 鹼金屬為Na時,適宜的Na含量也與上述鹼金屬適宜的含量相同。The alkali metal in the glass plate is contained in an unavoidable impurity or by active addition. For example, in the use of an alkali metal such as a liquid crystal display or a solar cell, the alkali metal may be one of the reasons for the performance deterioration, and the alkali metal in the alkali-free glass plate. The content is more than 0 and preferably 1000 ppm by mass or less. In this case, the alkali metal content is preferably 800 ppm by mass or less, more preferably 600 ppm by mass or less. Moreover, from the viewpoint of reducing the viscosity at the time of glass melting and easily producing glass, the lower limit is preferably 10 ppm by mass or more. When the alkali metal is Na, a suitable Na content is also the same as a suitable content of the above alkali metal.

無鹼玻璃可使用於顯示器用玻璃基板。就液晶顯示器用途而言,即使玻璃板中僅含些許鹼金屬,也可能成為透明導電性氧化物膜之特性減弱的原因,所以適宜使用鹼金屬不易擴散至玻璃板表面的本實施形態之玻璃板。鹼金屬尤其可列舉Na。 以Na為例的鹼金屬含量譬如可在以氫氟酸等溶解玻璃後,利用原子吸收分光光度法或ICP發光分光分析法等機器分析來測定。The alkali-free glass can be used for a glass substrate for a display. In the liquid crystal display application, even if the glass plate contains only a small amount of alkali metal, the characteristics of the transparent conductive oxide film may be weakened. Therefore, it is preferable to use the glass plate of the embodiment in which the alkali metal is not easily diffused to the surface of the glass plate. . The alkali metal is particularly preferably Na. The alkali metal content exemplified by Na can be measured by, for example, atomic absorption spectrophotometry or ICP emission spectrometry after dissolving the glass with hydrofluoric acid or the like.

玻璃板之厚度無特別限制,譬如在液晶顯示器用途上,基於輕量化之觀點通常宜為3mm以下,1mm以下較佳,0.7mm以下更佳,0.4mm以下尤佳。又,為了抑制步驟處理時的撓變性,宜為0.1mm以上,0.2mm以上更佳。The thickness of the glass plate is not particularly limited. For example, in the use of a liquid crystal display, it is usually preferably 3 mm or less based on the viewpoint of weight reduction, preferably 1 mm or less, more preferably 0.7 mm or less, and particularly preferably 0.4 mm or less. Further, in order to suppress the deflection at the time of the step treatment, it is preferably 0.1 mm or more and more preferably 0.2 mm or more.

另,本實施形態之玻璃板形狀無特別限定。譬如,可採用具有均勻板厚的平板形、表面及背面中至少一者具有曲面之形狀以及具有摺曲部等之立體形狀等各種形狀的玻璃板。 就顯示器或太陽電池用途而言,因講求表面的平坦性,故以均勻板厚的平板形為宜。Further, the shape of the glass plate of the present embodiment is not particularly limited. For example, a glass plate having a uniform plate thickness, at least one of a front surface and a back surface having a curved shape and a three-dimensional shape such as a bent portion may be used. In the case of a display or a solar cell, since the flatness of the surface is required, it is preferable to use a flat plate having a uniform thickness.

本實施形態之玻璃板的組成無特別限定,可舉如下列玻璃板組成。(i)一種為無鹼玻璃之玻璃,以氧化物基準之莫耳%表示,含有SiO2 :50~73%、Al2 O3 :5~27%、B2 O3 :0~12%、MgO:0~12%、CaO:0~15%、SrO:0~24%、BaO:0~15%及ZrO2 :0~5%,且MgO+CaO+SrO+BaO:7~29.5%。(ii)一種為鹼性玻璃(鈉鈣玻璃)之玻璃,以氧化物基準之莫耳%表示,含有SiO2 :65~75%、Al2 O3 :0~5%、Na2 O:9~17%、K2 O:0~2%、MgO:0~9%及CaO:0~10%。(iii)一種為鹼性玻璃(鋁矽酸鹽玻璃)之玻璃,以氧化物基準之莫耳%表示,含有SiO2 :55~75%、Al2 O3 :5~20%、Na2 O:3~20%、K2 O:0~10%及MgO:0~20%且CaO+SrO+BaO:0~20%。The composition of the glass plate of the present embodiment is not particularly limited, and may be the following glass plate composition. (i) a glass which is an alkali-free glass, expressed as % by mole of oxide, containing SiO 2 : 50 to 73%, Al 2 O 3 : 5 to 27%, B 2 O 3 : 0 to 12%, MgO: 0~12%, CaO: 0~15%, SrO: 0~24%, BaO: 0~15% and ZrO 2 : 0~5%, and MgO+CaO+SrO+BaO: 7~29.5%. (ii) A glass which is an alkali glass (soda-lime glass) expressed by mol% based on an oxide, containing SiO 2 : 65 to 75%, Al 2 O 3 : 0 to 5%, Na 2 O: 9 ~17%, K 2 O: 0~2%, MgO: 0~9% and CaO: 0~10%. (iii) A glass which is an alkali glass (aluminum silicate glass), expressed as % by mole of oxide, containing SiO 2 : 55 to 75%, Al 2 O 3 : 5 to 20%, Na 2 O : 3~20%, K 2 O: 0~10% and MgO: 0~20% and CaO+SrO+BaO: 0~20%.

<玻璃板之製造方法> 以下說明製造本實施形態之玻璃板的一方法態樣,惟本發明不受此限定。 本實施形態之玻璃板譬如可利用下列步驟1~步驟5來製造。步驟1:熔融玻璃原料之步驟;步驟2:接著成形玻璃板之步驟;步驟3:將成形之玻璃板予以研磨之步驟;步驟4:接著在乾燥氣體環境下進行脫水處理之步驟;步驟5:然後將表層蝕刻之步驟。<Method for Producing Glass Plate> A method for producing the glass plate of the present embodiment will be described below, but the present invention is not limited thereto. The glass plate of the present embodiment can be produced, for example, by the following steps 1 to 5. Step 1: the step of melting the glass raw material; the step 2: the step of forming the glass plate; the step 3: the step of grinding the formed glass plate; the step 4: the step of performing the dehydration treatment in a dry gas atmosphere; Then the step of etching the surface layer.

(步驟1及步驟2) 將所需玻璃原料投入連續熔融爐內,且在理想的1500~1600℃下將玻璃原料加熱熔融、澄清後,供給至成形裝置將熔融玻璃成形為板狀,再進行徐冷即可製造玻璃板。(Step 1 and Step 2) The required glass raw material is put into a continuous melting furnace, and the glass raw material is heated and melted and clarified at a desired temperature of 1500 to 1600 ° C, and then supplied to a molding apparatus to form the molten glass into a plate shape, and then Xu cold can make glass plates.

玻璃板之成形可採用各種方法。譬如可採用下拉法(譬如溢流下拉法、流孔下引法及再伸延法等)、浮製玻板法、轉出法、壓製法、熔融法等各式成形方法。Various methods can be used for forming the glass sheet. For example, various methods such as a down-draw method (such as an overflow down-draw method, a flow-down method, and a re-extension method), a floating glass plate method, a transfer method, a pressing method, and a melting method can be employed.

在想對玻璃板形成透明導電性氧化物膜之用途時,若為利用浮製玻板法成形之浮製玻璃,成形時多會透過將與熔融錫接觸之面研磨的研磨步驟來製造。由於可以後述之步驟3替代該研磨步驟,所以在生產性觀點上,本實施形態之玻璃板之製造方法適合使用浮製玻璃。 另,玻璃板亦可直接使用市售物,或可除上述步驟1及步驟2以外進一步進行化學強化或物理強化等處理。When it is intended to form a transparent conductive oxide film on a glass plate, the floating glass formed by the floating glass plate method is often produced by a polishing step of polishing a surface in contact with molten tin during molding. Since the polishing step can be replaced by the step 3 described later, the method for producing a glass sheet of the present embodiment is suitable for using a floating glass from the viewpoint of productivity. Further, the glass plate may be directly used as a commercially available product, or may be further subjected to chemical strengthening or physical strengthening in addition to the above steps 1 and 2.

(步驟3) 將成形之玻璃板予以研磨,以去除玻璃板表面之變質層。玻璃板表面之變質層係源自玻璃板之製造方法中經加工後而成的變質層。藉由去除玻璃板之變質層,可適宜控制後述步驟4中存在於玻璃板表層的矽烷醇基數(氫原子數)。 研磨量並無特別限定,為了使玻璃板表面與玻璃內部主體(bulk)呈相同狀態,宜研磨100μm左右。惟,玻璃板厚度為0.2mm以下時,研磨量應適宜調整。(Step 3) The formed glass plate is ground to remove the deteriorated layer on the surface of the glass plate. The altered layer on the surface of the glass sheet is derived from a modified layer formed by processing in a method of producing a glass sheet. By removing the altered layer of the glass plate, the number of stanol groups (number of hydrogen atoms) present in the surface layer of the glass sheet in the step 4 described later can be appropriately controlled. The amount of polishing is not particularly limited, and it is preferable to polish about 100 μm in order to make the surface of the glass plate in the same state as the inside of the glass. However, when the thickness of the glass plate is 0.2 mm or less, the amount of grinding should be appropriately adjusted.

研磨方法使用習知的公知研磨方法即可,研磨壓力等研磨條件也無限定。譬如,可用氧化鈰或膠質氧化矽等作為磨粒來進行研磨。The polishing method may be a conventionally known polishing method, and the polishing conditions such as the polishing pressure are not limited. For example, cerium oxide or colloidal cerium oxide or the like may be used as the abrasive grains for grinding.

(步驟4) 在乾燥氣體環境下對經研磨之玻璃板進行脫水處理。 乾燥氣體環境並無特別限定,可舉如乾燥氮氣環境、乾燥氬氣環境、乾燥空氣等。 在該乾燥氣體環境下將玻璃板加熱進行脫水處理。脫水處理係利用脫水縮合將玻璃板表面之矽烷醇基以Si-OH+Si-OH→Si-O-Si+H2 O將水釋出系統外之處理方法。藉此可減少存在於玻璃板表層之矽烷醇基數(氫原子數),從而可減低表層氫濃度。(Step 4) The ground glass plate is subjected to dehydration treatment in a dry gas atmosphere. The dry gas atmosphere is not particularly limited, and examples thereof include a dry nitrogen atmosphere, a dry argon atmosphere, and dry air. The glass plate is heated in the dry gas atmosphere for dehydration treatment. The dehydration treatment is a treatment method in which the stanol group on the surface of the glass plate is released from the system by Si-OH + Si-OH → Si-O-Si + H 2 O by dehydration condensation. Thereby, the number of stanol groups (number of hydrogen atoms) present in the surface layer of the glass sheet can be reduced, thereby reducing the surface hydrogen concentration.

脫水處理之加熱溫度只要是可引發矽烷醇基行脫水縮合反應之溫度以上即可,又,加熱時間愈長,脫水縮合反應愈能進展。 亦即,加熱溫度低時,可相應藉由拉長加熱時間,來減少存在於玻璃板表面或表層之氫原子數。又,加熱溫度高時,可以較短的加熱時間來減少該氫原子數。 譬如,將加熱溫度定為640℃時,乾燥氮氣環境中之加熱時間宜為25小時以上,50小時以上較佳。The heating temperature of the dehydration treatment may be at least a temperature at which the dehydration condensation reaction of the stanol group can be initiated, and the longer the heating time, the more the dehydration condensation reaction progresses. That is, when the heating temperature is low, the number of hydrogen atoms present on the surface or surface layer of the glass sheet can be reduced by elongating the heating time. Further, when the heating temperature is high, the number of hydrogen atoms can be reduced by a short heating time. For example, when the heating temperature is set to 640 ° C, the heating time in a dry nitrogen atmosphere is preferably 25 hours or more, and more preferably 50 hours or more.

(步驟5) 因為在脫水處理之乾燥氣體環境下加熱,會於玻璃板表面形成變質層。所以,需於脫水處理後將玻璃板表層予以蝕刻,以去除該變質層。 蝕刻可使用譬如氫氟酸或氫氟酸與鹽酸之混酸藥液等。蝕刻方法無特別限定,可舉如將玻璃板浸漬於藥液中並同時照超音波之方法等。(Step 5) Since the heating is performed in a dry gas atmosphere of dehydration treatment, a deteriorated layer is formed on the surface of the glass plate. Therefore, the surface of the glass plate needs to be etched after the dehydration treatment to remove the altered layer. For the etching, for example, hydrofluoric acid or a mixed acid solution of hydrofluoric acid and hydrochloric acid or the like can be used. The etching method is not particularly limited, and examples thereof include a method in which a glass plate is immersed in a chemical solution and a supersonic wave is simultaneously irradiated.

蝕刻量可從蝕刻前後之玻璃板的重量變化來估量,若要充分去除變質層且充分顯現步驟4之脫水縮合效果,宜蝕刻0.2μm左右。 若增加蝕刻量,則已藉由步驟4之脫水縮合使表層氫濃度降低之層就會相應被削減。亦即,即使步驟4之脫水縮合係在恆定溫度且恆定時間下進行,但若蝕刻量一多,其表層氫濃度就會變得與在比該溫度更低之溫度及/或在比該時間更短之時間下進行脫水縮合之情況相同。The amount of etching can be estimated from the change in weight of the glass plate before and after etching. If the altered layer is sufficiently removed and the dehydration condensation effect of the step 4 is sufficiently exhibited, it is preferably etched to about 0.2 μm. If the amount of etching is increased, the layer having reduced the hydrogen concentration in the surface layer by the dehydration condensation in the step 4 is accordingly reduced. That is, even if the dehydration condensation of the step 4 is carried out at a constant temperature and for a constant time, if the etching amount is large, the surface hydrogen concentration becomes lower than the temperature and/or at a later time. The same is true for dehydration condensation in a shorter period of time.

藉由上述步驟1~步驟5可製造本發明之玻璃板。The glass plate of the present invention can be produced by the above steps 1 to 5.

將所得玻璃板應用在製品時,一般都會施加某種處理。譬如作為液晶顯示器用玻璃基板使用時,多半會在玻璃板上鍍上稱作ITO之氧化銦錫(Indium Tin Oxide)化合物之薄膜(ITO膜)。ITO膜之製膜溫度譬如為350℃左右。 又,亦宜對所得玻璃板施行化學強化處理做成化學強化玻璃板。化學強化玻璃板係於玻璃表面具有經離子交換之壓縮應力層的玻璃板,譬如可使含有鈉離子之玻璃板接觸含有鉀離子之無機鹽(熔鹽)而製得。熔鹽之溫度依所用無機鹽而異,通常為350~500℃左右。 本實施形態之玻璃板的特徵在於,即使在這種製膜中或製膜前後經過某種加熱步驟或是化學強化處理等高溫過程後,(表層氫濃度/內部氫濃度)所示之值依舊在0.80以下。因為(表層氫濃度/內部氫濃度)之值小,所以鹼金屬不易擴散至玻璃表層,從而可抑制鹼金屬擴散所造成之透明導電性氧化物膜的特性減弱等。 實施例When the resulting glass sheet is applied to an article, some treatment is generally applied. For example, when used as a glass substrate for a liquid crystal display, a thin film (ITO film) of an indium tin oxide (ITO) compound called ITO is often plated on a glass plate. The film formation temperature of the ITO film is, for example, about 350 °C. Further, it is also preferable to chemically strengthen the obtained glass plate to form a chemically strengthened glass plate. The chemically strengthened glass plate is a glass plate having an ion-exchanged compressive stress layer on the surface of the glass, for example, a glass plate containing sodium ions is brought into contact with an inorganic salt (molten salt) containing potassium ions. The temperature of the molten salt varies depending on the inorganic salt used, and is usually about 350 to 500 °C. The glass plate of the present embodiment is characterized in that the value shown in the surface layer hydrogen concentration/internal hydrogen concentration is still in the film formation process or after a high temperature process such as a heating step or a chemical strengthening treatment before or after the film formation. Below 0.80. Since the value of (surface hydrogen concentration/internal hydrogen concentration) is small, the alkali metal is less likely to diffuse to the surface layer of the glass, and the deterioration of the characteristics of the transparent conductive oxide film due to the diffusion of the alkali metal can be suppressed. Example

以下列舉實施例來具體說明本發明,惟本發明不受該等限定。The invention is specifically illustrated by the following examples, but the invention is not limited thereto.

<評估方法> (表層氫濃度/內部氫濃度) 依照前述[(表層氫濃度/內部氫濃度)測定方法]中記載之方法,利用SIMS導出(表層氫濃度/內部氫濃度)。另,將玻璃板從表面研磨至深度100μm(誤差±10μm),做成內部氫濃度測定用玻璃板。該研磨係使用氧化鈰漿料進行。又,利用SIMS所得玻璃板之1 H- /30 Si- 計數比的深度方向剖面圖之繪製間隔係各約0.006μm。<Evaluation Method> (Surface Hydrogen Concentration/Internal Hydrogen Concentration) The method described in the above [(Surface hydrogen concentration/internal hydrogen concentration) measurement method] was used to derive (surface hydrogen concentration/internal hydrogen concentration) by SIMS. Further, the glass plate was polished from the surface to a depth of 100 μm (error ± 10 μm) to prepare a glass plate for internal hydrogen concentration measurement. This grinding was carried out using a cerium oxide slurry. Further, the drawing interval of the 1 H - / 30 Si - count ratio of the glass plate obtained by SIMS was about 0.006 μm each in the depth direction sectional view.

(表層Na計數) 依照前述[表層Na計數測定方法]中記載之方法,利用TOF-SIMS導出表層Na計數。 另,測定表層Na計數時,係使用以所得玻璃板在大氣環境下進行350℃且3小時熱處理後之玻璃板作為試料。該熱處理條件的時間比一般在玻璃板形成ITO膜時之加熱條件更長。(Surface Na count) The surface Na count was derived by TOF-SIMS according to the method described in the above [Surface Na Count Measurement Method]. Further, when the surface layer Na count was measured, a glass plate obtained by subjecting the obtained glass plate to heat treatment at 350 ° C for 3 hours in an air atmosphere was used as a sample. The heat treatment conditions are longer than the heating conditions generally when the ITO film is formed on the glass plate.

<實施例1> 將下述組成之無鹼玻璃板(厚0.5mm)表面研磨至深度100μm。研磨係使用氧化鈰漿料。藉此去除自玻璃板之製造方法所形成的玻璃板表面之加工變質層,使玻璃板表面與主體呈相同狀態。 接著,將研磨後之玻璃板在露點負50℃以下之乾燥氮氣環境下進行640℃、25小時加熱處理,進行脫水縮合。然後將玻璃板浸漬於0.2%HF與0.7%HCl之混酸藥液中4分鐘,並同時照100kHz之超音波進行約0.2μm之蝕刻,去除源自加熱處理所形成之變質層,而獲得實施例1之玻璃板。另,蝕刻厚度係從蝕刻處理前後之玻璃板的重量變化算出。玻璃組成(氧化物基準之莫耳%):SiO2 :65%、Al2 O3 :10%、B2 O3 :8%、MgO:5%、CaO:7%、SrO:4%<Example 1> An alkali-free glass plate (thickness: 0.5 mm) having the following composition was surface-polished to a depth of 100 μm. The polishing system uses a cerium oxide slurry. Thereby, the work-affected layer on the surface of the glass plate formed by the method for producing a glass plate is removed, so that the surface of the glass plate is in the same state as the main body. Next, the polished glass plate was subjected to heat treatment at 640 ° C for 25 hours in a dry nitrogen atmosphere having a dew point of minus 50 ° C to carry out dehydration condensation. Then, the glass plate was immersed in a mixed acid solution of 0.2% HF and 0.7% HCl for 4 minutes, and an etching of about 0.2 μm was performed by ultrasonic waves of 100 kHz to remove the altered layer formed by the heat treatment, thereby obtaining an example. 1 glass plate. Further, the etching thickness was calculated from the change in weight of the glass plate before and after the etching treatment. Glass composition (% by mole of oxide standard): SiO 2 : 65%, Al 2 O 3 : 10%, B 2 O 3 : 8%, MgO: 5%, CaO: 7%, SrO: 4%

<實施例2> 除了將加熱處理之加熱時間設為52小時以外,以與實施例1同樣的方式製得實施例2之玻璃板。 <實施例3> 除了將加熱處理之加熱時間設為120小時以外,以與實施例1同樣的方式製得實施例3之玻璃板。 <比較例1> 除了將加熱處理之加熱時間設為0小時以外,以與實施例1同樣的方式製得比較例1之玻璃板。 <比較例2> 除了將加熱處理之加熱時間設為3小時以外,以與實施例1同樣的方式製得比較例2之玻璃板。<Example 2> A glass plate of Example 2 was obtained in the same manner as in Example 1 except that the heating time of the heat treatment was 52 hours. <Example 3> A glass plate of Example 3 was obtained in the same manner as in Example 1 except that the heating time of the heat treatment was 120 hours. <Comparative Example 1> A glass plate of Comparative Example 1 was obtained in the same manner as in Example 1 except that the heating time of the heat treatment was set to 0 hours. <Comparative Example 2> A glass plate of Comparative Example 2 was obtained in the same manner as in Example 1 except that the heating time of the heat treatment was changed to 3 hours.

針對所得玻璃板分別進行各種評估。結果列於表1。表1中「表層Na之減少率(%)」係以未在乾燥氮氣環境下進行加熱處理之比較例1的玻璃板,於大氣環境下進行熱處理後之表層Na計數為基準之值。又,圖1顯示繪製實施例及比較例中所得玻璃板之(表層氫濃度/內部氫濃度)與在大氣環境下進行熱處理後之表層Na計數之關係的圖表。Various evaluations were made for the obtained glass sheets. The results are shown in Table 1. The "reduction rate (%) of surface layer Na" in Table 1 is a value obtained by subjecting the glass plate of Comparative Example 1 which was not subjected to heat treatment in a dry nitrogen atmosphere to the surface layer Na after heat treatment in an air atmosphere. Further, Fig. 1 is a graph showing the relationship between the surface layer hydrogen concentration/internal hydrogen concentration of the glass sheets obtained in the examples and the comparative examples and the surface Na count after heat treatment in an atmospheric environment.

[表1] [Table 1]

試驗例中,由於比較例1未在乾燥氮氣環境下進行加熱處理,所以為未經脫水縮合之玻璃板。如表1及圖1明示,實施例之玻璃板的(表層氫濃度/內部氫濃度)皆為低於0.80以下之值。藉此,比起比較例1之未經脫水縮合之玻璃板,在大氣環境下進行熱處理後存在於玻璃表層之Na(表層Na計數)減少近3成或超過3成。所以,可說有獲得Na不易擴散至玻璃板表面的玻璃板。In the test example, since Comparative Example 1 was not subjected to heat treatment in a dry nitrogen atmosphere, it was a glass plate which was not dehydrated and condensed. As shown in Table 1 and Fig. 1, the glass sheets of the examples (the surface layer hydrogen concentration/internal hydrogen concentration) were all lower than 0.80. As a result, Na (surface Na count) which is present on the surface layer of the glass is reduced by nearly 30% or more than 30%, compared with the glass sheet which has not been dehydrated and condensed in Comparative Example 1, after heat treatment in an atmosphere. Therefore, it can be said that a glass plate which does not easily diffuse Na to the surface of the glass plate is obtained.

本申請案雖已詳細且參照特定實施態樣加以說明,但顯然熟知此項技藝之人士可在不脫離本發明精神及範圍之前提下施予各種變更或修正。 本申請案係立基於2016年4月22日提申之日本專利申請案(日本特願2016-086244),並在此將其內容納入作參考。The present invention has been described in detail with reference to the specific embodiments thereof, and it is obvious that those skilled in the art can make various changes or modifications without departing from the spirit and scope of the invention. The present application is based on a Japanese patent application filed on Apr. 22, 2016, the disclosure of which is hereby incorporated by reference.

產業上之可利用性 本發明之玻璃板的鹼金屬不易擴散至玻璃板表面。所以,適合使用於有鹼金屬譬如Na減弱特性之疑慮的用途,諸如顯示器用基板或太陽電池用基板等用途。Industrial Applicability The alkali metal of the glass plate of the present invention does not easily diffuse to the surface of the glass plate. Therefore, it is suitable for use in applications in which an alkali metal such as Na is weakened, such as a substrate for a display or a substrate for a solar cell.

圖1係繪製實施例及比較例中所得各玻璃板之(表層氫濃度/內部氫濃度)與該等各玻璃板於熱處理後表層Na計數之關係的圖表。Fig. 1 is a graph showing the relationship between the surface layer hydrogen concentration/internal hydrogen concentration of each of the glass sheets obtained in the examples and the comparative examples and the surface Na counts of the respective glass sheets after heat treatment.

no

Claims (12)

一種玻璃板,以(表層氫濃度/內部氫濃度)所示之值為0.80以下,其中表層氫濃度為玻璃板表面至深度0.5~1.5μm區域中之氫濃度平均值,內部氫濃度係已自前述玻璃板去除表面至深度100μm區域後之玻璃板的表面至深度0.5~1.5μm區域中之氫濃度; 惟,玻璃板厚度為0.2mm以下時,內部氫濃度係去除玻璃板一半厚度之深度區域後之玻璃板的表面至深度0.5~1.5μm區域中之氫濃度。A glass plate having a value of (the surface layer hydrogen concentration/internal hydrogen concentration) of 0.80 or less, wherein the surface layer hydrogen concentration is an average value of the hydrogen concentration in the region from the surface of the glass plate to a depth of 0.5 to 1.5 μm, and the internal hydrogen concentration has been The glass plate removes the surface to the depth of the surface of the glass plate after the depth of 100 μm to a concentration of hydrogen in a region of 0.5 to 1.5 μm; if the thickness of the glass plate is 0.2 mm or less, the internal hydrogen concentration is a depth region at which half of the thickness of the glass plate is removed. The concentration of hydrogen in the area of the rear glass plate to a depth of 0.5 to 1.5 μm. 如請求項1之玻璃板,其中前述(表層氫濃度/內部氫濃度)所示之值為0.40以上。The glass plate of claim 1, wherein the value (the surface hydrogen concentration/internal hydrogen concentration) is 0.40 or more. 如請求項1或2之玻璃板,其中前述(表層氫濃度/內部氫濃度)所示之值為0.65以下。The glass plate of claim 1 or 2, wherein the value (the surface layer hydrogen concentration/internal hydrogen concentration) is 0.65 or less. 如請求項1至3中任一項之玻璃板,其中前述(表層氫濃度/內部氫濃度)所示之值為0.50以下。The glass plate according to any one of claims 1 to 3, wherein the value (the surface layer hydrogen concentration/internal hydrogen concentration) is 0.50 or less. 如請求項1至4中任一項之玻璃板,其為浮製玻璃。A glass sheet according to any one of claims 1 to 4 which is a float glass. 如請求項1至5中任一項之玻璃板,其為無鹼玻璃。A glass plate according to any one of claims 1 to 5 which is an alkali-free glass. 如請求項6之玻璃板,其Na含量大於0且在1000質量ppm以下。The glass plate of claim 6 has a Na content of more than 0 and less than 1000 ppm by mass. 一種顯示器用玻璃基板,係由如請求項5至7中任一項之玻璃板構成。A glass substrate for a display, comprising the glass plate according to any one of claims 5 to 7. 如請求項1至5中任一項之玻璃板,其為鈉鈣玻璃。A glass plate according to any one of claims 1 to 5 which is a soda lime glass. 如請求項1至5中任一項之玻璃板,其為鋁矽酸鹽玻璃。A glass sheet according to any one of claims 1 to 5 which is an aluminosilicate glass. 如請求項9或10之玻璃板,其業經化學強化處理。The glass sheet of claim 9 or 10 is chemically strengthened. 一種太陽電池用玻璃基板,係由如請求項9至11中任一項之玻璃板構成。A glass substrate for a solar cell, comprising the glass plate according to any one of claims 9 to 11.
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