TW201742240A - Display apparatus and forming method thereof - Google Patents

Abstract

A display apparatus and a forming method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite to each other, wherein the first surface faces the substrate. The light emitting diode is bonding to the substrate through the first bump. The first insulating layer is disposed at periphery sides of the first bump and the light emitting diode and contact with the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Description

Display device and method of manufacturing same

The present disclosure relates to a device and a method of fabricating the same, and more particularly to a display device and a method of fabricating the same.

The light emitting diode (LED) display device has the advantages of active illumination, high brightness, high contrast, low power consumption, and compared to an organic light emitting diode (OLED) display device. It has the advantages of long life and so on, so it has become one of the technologies that have been vigorously developed in recent years. In order to meet the demand for high resolution, the light-emitting diode display device is moving toward a direction composed of an active element array substrate and a micron-sized light emitting diode arranged in an array.

The present disclosure provides a display device having an insulating layer structure that provides protection.

The present disclosure provides a method of fabricating a display device in which an insulating layer can buffer a force when a light emitting diode is bonded to a substrate.

The display device of the present disclosure includes a substrate, a light emitting diode, a first bump, a first insulating layer, and a second insulating layer. The light emitting diode has opposing first and second surfaces, wherein the first surface faces the substrate. The light emitting diode is connected to the substrate via the first bump. The first insulating layer is disposed on the circumferential side of the first bump and the light emitting diode and is in contact with the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

The method of manufacturing the display device of the present disclosure includes the following steps. Forming at least one first bump electrically connected to the light emitting diode on the light emitting diode. Forming a first insulating layer, wherein the first insulating layer is disposed at least on a circumferential side of the first bump and is in contact therewith and surrounds at least a portion of the light emitting diode. The light emitting diode and the substrate are bonded by bonding the first bump to a first electrode of a substrate. Forming a second insulating layer on the substrate, wherein the second insulating layer surrounds at least a portion of the light emitting diode.

Based on the above, the first insulating layer of the present disclosure is disposed on the peripheral side of the bump and the light emitting diode and in contact with the bump and the first surface, and the second insulating layer surrounds at least a portion of the first insulating layer. Therefore, it is possible to buffer the force when the light-emitting diode is bonded to the substrate, and to provide light-shielding or protection to the light-emitting diode. As a result, the display device including the light-emitting diode has good component characteristics or yield.

The above described features and advantages of the invention will be apparent from the following description.

1A is a schematic cross-sectional view of a display device in accordance with an embodiment of the present disclosure, and FIG. 1B is a partial enlarged view of FIG. 1A. In the following embodiments, the display device includes a plurality of light emitting diodes as an example, but the invention is not limited thereto. In other embodiments, the display device may have only A light-emitting diode. Referring to FIG. 1A and FIG. 1B simultaneously, in the embodiment, the display device 10 includes a substrate 100, a light emitting diode 130, at least one bump (first bump 150, second bump 152), and a first insulating layer. 160 and a second insulating layer 170.

In detail, the substrate 100 includes, for example, a substrate 102 and an active device 104 disposed on the substrate 102 and a first electrode 120 and a second electrode 122 electrically connected to the active device 104 . In the present embodiment, the substrate 100 is, for example, an active element 104 including a plurality of arrays, a plurality of first electrodes 120, and a plurality of second electrodes 122. In the present embodiment, the active device 104 is, for example, an amorphous germanium thin film transistor, a low temperature polycrystalline germanium thin film transistor, a germanium based thin film transistor, a micro germanium thin film transistor or a transparent thin film transistor. In addition, in the embodiment, the active device 104 includes, for example, a gate 106, a gate insulating layer 108, a channel layer 110, a source 112 and a drain 114, a dielectric layer 115, a first protective layer 116, and a second protective layer. 118. The material of the first protective layer 116 is, for example, an organic material, and the material of the second protective layer 118 is, for example, an inorganic material such as cerium oxide, cerium nitride or cerium oxynitride, but is not limited thereto. Of course, although in this embodiment, a thin film transistor having the structure shown in FIG. 1B is used as the active element, in other embodiments, the thin film transistor may have other structures or other elements other than the thin film transistor. Active component.

In the embodiment, the first electrode 120 and the second electrode 122 are located on the surface of the second protective layer 118, for example. The first electrode 120 is electrically connected to the drain electrode 114, for example, and the second electrode 122 is, for example, a common electrode, but the invention is not limited thereto. The materials of the first electrode 120 and the second electrode 122 may be the same or different. In the present embodiment, the first electrode 120 is, for example, a positive electrode, and the material thereof is, for example, copper, titanium, nickel, silver, gold, indium or other suitable conductive material, but is not limited thereto. The second electrode 122 is, for example, a negative electrode, and the material thereof is, for example, copper, titanium, nickel, silver, gold, indium or other suitable conductive material, but is not limited thereto. In the present embodiment, the second electrode 122 is, for example, a ground electrode. In this embodiment, the number of the active device 104, the first electrode 120, and the second electrode 122 is exemplified by a plurality of examples, but the disclosure is not limited thereto, and the active device 104, the first electrode 120, and the first embodiment are in other embodiments. The number of the two electrodes 122 may also be one.

In the embodiment, the display device 10 includes, for example, a first bump 150 and a second bump 152. The first bump 150 is disposed corresponding to the first electrode 120, for example, and the second bump 152 is disposed corresponding to the second electrode 122, for example. The first bump 150 and the second bump 152 may be solid or hollow structures. The material of the first bump 150 and the second bump 152 is, for example, a binary, ternary or multi-component alloy composed of a metal of copper, silver, gold, nickel, titanium, tin, indium, antimony, platinum, palladium or the like. But it is not limited to this. The thickness of the first bump 150 and the second bump 152 is, for example, 0.1 micrometer to 20 micrometers. The thickness of the first bump 150 and the second bump 152 is, for example, 1% to 25% of the width of the light emitting diode 130. For example, the width of the light emitting diode 130 is about 40 micrometers. A bump 150 may have a thickness of about 3 microns, and the second bump 152 may have a thickness of about 4 microns.

In the present embodiment, the display device 10 includes, for example, a plurality of light emitting diodes 130, which are arrayed on the substrate 100, for example. The light-emitting diode 130 is, for example, a flip-chip light-emitting diode, which may be an organic light-emitting diode, a micro light-emitting diode, or other diode. The light-emitting diode 130 is embodied by a red light emitting diode, a green light emitting diode, a blue light emitting diode or a light emitting diode of other colors. The width of the light-emitting diode 130 is, for example, between 5 micrometers and 200 micrometers, the thickness is, for example, between 1 micrometer and 20 micrometers, and the main light-emitting area is, for example, about 10% to 60%, for example, Taking the width of the light-emitting diode 130 of about 40 micrometers as an example, the main light-emitting area is, for example, about 25%. The LEDs 130 are electrically connected to the first electrodes 120 and the second electrodes 122 via the first bumps 150 and the second bumps 152 , and are electrically connected to the substrate 100 .

Referring to FIG. 1B, the light emitting diode 130 includes, for example, an undoped semiconductor layer 131, a first type semiconductor layer 132a, an active layer 134, a second type semiconductor layer 132b, a first type electrode 136a, a second type electrode 136b, and Insulation layer 140. In the present embodiment, the light-emitting diode 130 further includes a conductor layer 138 disposed between the first-type semiconductor layer 132a and the first-type electrode 136a to improve conductivity between the two. In the present embodiment, the first type electrode 136a and the second type electrode 136b are, for example, solder pads. In this embodiment, the first type electrode 136a is electrically connected to the corresponding first electrode 120 by the first bump 150, for example, by the second bump 152 and the corresponding second. The electrode 122 is electrically connected. In the present embodiment, the first type is, for example, a p-type, the second type is, for example, an n-type, the first electrode 120 is, for example, a positive electrode, and the second electrode 122 is, for example, a negative electrode.

In the present embodiment, the light emitting diode 130 includes opposing first and second surfaces 130a, 130b. The first surface 130a is, for example, facing the inner surface of the substrate 100, and the second surface 130b is, for example, an outer surface facing away from the substrate 100. In the present embodiment, the first electrode 120 and the second electrode 122 are located on the same side of the LED 230, and the first electrode 120 and the second electrode 120 are the same as the flip-chip micro-light-emitting diode. The second electrode 122 is located between the first surface 130a of the LED 130 and the substrate 100.

In this embodiment, the first insulating layer 160 is disposed on at least one of the first bump 150 and the second bump 152 and the peripheral side of the LED body 130 and the first bump 150 and the second bump 152 The at least one of the contacts is in contact with the first surface 130a. In the present embodiment, the first insulating layer 160 surrounds the first bump 150 and the second bump 152 and surrounds the light emitting diode 130, for example. In addition, the first insulating layer 160 is also disposed between the adjacent first bumps 150 and second bumps 152. Specifically, the first insulating layer 160 is substantially filled with the accommodating space SP formed between the light-emitting diode 130, the first bump 150, and the second bump 152, and surrounds the first bump 150, The two bumps 152 and the light emitting diodes 130 provide support, protection, and stability for the LEDs 130, the first bumps 150, and the second bumps 152. The bottom surface of the first insulating layer 160 and the top surface of the first electrode 120 and the second electrode 122 are, for example, flush. Further, in the present embodiment, the first insulating layer 160 is also in contact with the uppermost surface of the substrate 100 (i.e., the upper surface of the second protective layer 118), so that the function of stabilizing the foregoing elements can be further enhanced. The material of the first insulating layer 160 may be a transparent material, a light absorbing black material, or a reflective white material, but is not limited thereto. Specifically, the material of the first insulating layer 160 includes a glue, a resin, a cerium oxide, a tantalum nitride or an underfiller, but is not limited thereto. The thickness of the first insulating layer 160 is, for example, between 1 micrometer and 20 micrometers. For example, the width of the light-emitting diode 130 is about 40 micrometers. The thickness of the first insulating layer 160 in FIG. 3A is about It is 5 microns, and the thickness of the first insulating layer 160 in FIG. 3B is about 8 microns. Furthermore, although the first insulating layer 160 is solid as an example in the present embodiment, in other embodiments, the first insulating layer 160 may also substantially include an air gap. In addition, in the embodiment, a portion of the first electrode 120 and a portion of the second electrode 122 are exposed by the first insulating layer 160 (ie, the outer edge portion is exposed), but in an embodiment (not shown), the first The insulating layer 160 may also cover an outer edge of at least one of the first electrode 120 and the second electrode 122.

In the embodiment, the second insulating layer 170 is disposed on the substrate 100 and surrounds at least a portion of the LEDs 130. In the present embodiment, the second insulating layer 170 further surrounds a portion of the first insulating layer 160. Specifically, the first bump 150, the second bump 152, the light emitting diode 130, and the first insulating layer 160 are defined as one light emitting unit, and the second insulating layer 170 is, for example, surrounding the light emitting unit and located adjacent to each other. Between the lighting units. In this way, the second insulating layer 170 can further stabilize the position of the light emitting unit, so that the light emitting units are respectively properly disposed on the substrate 100. In addition, at least one of the first insulating layer 160 and the second insulating layer 170 covers the first electrode 120 and the second electrode 122. Specifically, the first insulating layer 160 is, for example, an outer edge portion exposing the first electrode 120 and the second electrode 122, and the second insulating layer 170 covers the same. The materials of the first insulating layer 160 and the second insulating layer 170 may be the same or different. The material of the second insulating layer 170 may be a transparent material, a light absorbing black material, or a reflective white material, but is not limited thereto. Specifically, the material of the second insulating layer 170 includes a glue, a resin, or an underfiller, but is not limited thereto. The thickness of the second insulating layer 170 is, for example, between 0.1 μm and 5.0 μm. In this embodiment, the top surface of the second insulating layer 170 is, for example, not higher than the second surface 130b of the light emitting diode 130, but the invention is not limited thereto. Furthermore, in an embodiment (not shown), the display device 10 may further include an opposite substrate disposed opposite to the substrate such that the LEDs 130 are located therebetween, and further refer to FIG. 3B. The first bump 150 and the first electrode 120 form a first flared portion 153 on the outer peripheral side of the junction of the two electrodes, and the second bump 152 and the second electrode 122 form a first outer peripheral side at the junction of the two. Two outer expansion portions 154.

Next, a method of manufacturing the display device will be explained. 2A to 2G are schematic flow charts showing a method of fabricating a light emitting unit in the display device of FIG. 1B. Referring to FIG. 2A, first, an undoped semiconductor layer 131, a second type semiconductor layer 132b, an active layer 134, a first type semiconductor layer 132a, and a conductor layer 138 are sequentially formed on the epitaxial substrate S. For the blue and green light-emitting diodes, the epitaxial substrate S is, for example, a substrate such as sapphire, and the material layer on which the epitaxial layer is epitaxial may be an InGaN-based material. For the red light-emitting diode, the epitaxial substrate S may be a substrate such as GaAs, and the material layer on which the epitaxial layer is epitaxial may be a material mainly composed of AlGaInP, but is not limited thereto. Specifically, the material of the undoped semiconductor layer 131 is, for example, InGaN or other suitable material. The first type semiconductor layer 132a is, for example, GaN doped with a first type dopant or other suitable material such as GaN doped with magnesium. The active layer 134 is, for example, a multiple quantum well, the material of which is, for example, InGaN/GaN or other suitable material, but is not limited thereto. The second type semiconductor layer 132b is, for example, GaN doped with a second type dopant or other suitable material such as GaN doped with germanium, but is not limited thereto. The method of forming the undoped semiconductor layer 131, the second type semiconductor layer 132b, the active layer 134, and the first type semiconductor layer 132a is, for example, an organometallic vapor phase deposition method, but is not limited thereto. The material of the conductor layer 138 is, for example, a transparent conductive material such as ITO, a metal such as nickel, silver or platinum or a combination of a transparent conductive material and a Bragg reflector, but is not limited thereto. The method of forming the conductor layer 138 is, for example, a vapor deposition method, but is not limited thereto.

Referring to FIG. 2B, next, a portion of the second type semiconductor layer 132b, the active layer 134, the first type semiconductor layer 132a, and the conductor layer 138 are removed to expose a portion of the second type semiconductor layer 132b. As a result, an island structure (mesa) is formed in which the active layer 134, the first type semiconductor layer 132a, and the conductor layer 138 are disposed on part of the second type semiconductor layer 132b. The method of removing part of the second type semiconductor layer 132b, the active layer 134, and the first type semiconductor layer 132a is, for example, an etching process such as inductively coupled plasma etching (ICP), but is not limited thereto.

Referring to FIG. 2C, a first type electrode 136a and a second type electrode 136b are formed on the first type semiconductor layer 132a and the second type semiconductor layer 132b, respectively, to form the light emitting diode 130. The material of the first type electrode 136a and the second type electrode 136b is, for example, chromium, platinum, gold or an alloy thereof, but is not limited thereto. In the present embodiment, for example, the first type electrode 136a is formed on the conductor layer 138. Then, an insulating layer 140 is formed on the exposed surface of the formed structure, wherein the insulating layer 140 covers the surface of the structure other than the upper surfaces of the first type electrode 136a and the second type electrode 136b. The material of the insulating layer 140 is, for example, cerium oxide, but is not limited thereto. The method of forming the insulating layer 140 is, for example, a chemical deposition process, but is not limited thereto.

Referring to FIG. 2D, first bumps 150 and second bumps 152 are formed on the first type electrode 136a and the second type electrode 136b, respectively. The method of forming the first bumps 150 and the second bumps 152 is, for example, a plating method, but is not limited thereto. The first bump 150 and the second bump 152 have, for example, the same height, and thus the top of the first bump 150 is, for example, higher than the top of the second bump 152.

Referring to FIG. 2E , a first insulating layer 160 is formed on the first bumps 150 and the second bumps 152 . In the present embodiment, the first insulating layer 160 is, for example, the entire sidewall surrounding the island structure. Specifically, the first insulating layer 160 is, for example, the entire sidewall surrounding the undoped semiconductor layer 131 and the second type semiconductor layer 132b. In the present embodiment, the method of forming the first insulating layer 160 is, for example, a coating method, but is not limited thereto. The height of the first insulating layer 160 is, for example, flush with the first bump 150.

Referring to FIG. 2F , a portion of the first insulating layer 160 and the first bumps 150 are removed such that the tops of the first bumps 150 , the second bumps 152 , and the first insulating layer 160 are flush. In the present embodiment, for example, the first bump 150 and the first insulating layer 160 are subjected to a rubbing process by using the top of the second bump 152 as the polishing end point. The polishing process may be a chemical mechanical polishing process, but is not limited thereto.

Referring to FIG. 2G, the structure formed as described above is separated from the epitaxial substrate S. In the present embodiment, for the blue and green light-emitting diodes, the separation method is, for example, a laser lift-off method, but is not limited thereto. The laser lift-off method can be performed using a laser having a wavelength of 248 nm. For the red light-emitting diode, the separation method is, for example, a chemical peeling method, but is not limited thereto. The chemical peeling method is, for example, a stripping liquid such as ammonia water and hydrogen peroxide or phosphoric acid or hydrogen peroxide, but is not limited thereto.

Then, as shown in FIGS. 1A and 1B, the light-emitting unit separated from the epitaxial substrate S is bonded to the substrate 100, and the second insulating layer 170 is formed after bonding. In particular, in the process of bonding the light emitting unit to the substrate 100, a heating process of about 50 ° C to 250 ° C is performed to soften the first electrode 120 and the second electrode 122 and the light emitting diode 130 . The first bump 150 and the second bump 152 are joined to the first electrode 120 and the second electrode 122 by the first bump 150 and the second bump 152. Generally, this heating process tends to cause a problem that the thermal expansion coefficients of the materials do not match. However, in the present embodiment, since the first insulating layer 160 structure is employed, the problem of mismatching of the thermal expansion coefficients of the materials can be effectively alleviated, thereby improving the yield after die bonding. Moreover, in the embodiment, the bottom surface of the first insulating layer 160 is exemplified as being flush with the top surfaces of the first electrode 120 and the second electrode 122, but in another embodiment, as shown in FIG. 3A. During the bonding, it is also possible for the first insulating layer 160 to further fill the gap between the first electrode 120 and the second electrode 122. At this time, the accommodating space SP described in the present invention is formed between the light emitting diode 130, the first bump 150, the second bump 152, the first electrode 120, the second electrode 122, and the substrate 100, and the first insulation The layer 160 is filled, for example, with the accommodation space SP.

It is to be noted that in the embodiment, the first insulating layer 160 is used to surround the entire sidewall of the undoped semiconductor layer 131 and the second type semiconductor layer 132b, but the invention is not limited thereto. For example, in another embodiment, as shown in FIG. 3B, the first insulating layer 160 may also expose a portion of sidewalls of the LEDs 130, such as exposing the undoped semiconductor layer 131 and the second type semiconductor layer 132b. Side wall. Furthermore, in an embodiment, as shown in FIG. 4, the top surface of the second insulating layer 170 may also be higher than the second surface 130b of the LED 230 and cover the LEDs 130. The phenomenon of reflection, at this time, the refractive index of the second insulating layer 170 needs to be higher than the refractive index of the first insulating layer 169.

In this embodiment, the first insulating layer 160 is disposed on the circumferential side of the first bump 150, the second bump 152, and the light emitting diode 130, and the first bump 150, the second bump 152, and the first surface. Contact 130a contacts, thus providing support for the LEDs 130. Furthermore, in the separating step in which the light emitting diode 130 is peeled off from the epitaxial substrate S and the bonding step in which the light emitting diode 130 and the substrate 100 are bonded, a buffer function can be provided for the generated stress and the heating is slowed down. The material thermal expansion coefficient does not match the problem. As a result, the display device 10 including the light-emitting diode 130 has a good yield. Moreover, since the first insulating layer 160 is further in contact with the outer surface of the substrate 100, the first bump 150 and the second bump 152 can be more stably fixed on the substrate 100, so that the light emitting diode 130 and the substrate 100 have Better bonding. Furthermore, in addition to further arranging the first insulating layer 160 around the light emitting diode 130, the second insulating layer 170 is disposed between the light emitting diodes 130, so that the first insulating layer 160 and the second insulating layer 170 can illuminate The diode 130 provides the functions of shading and protection, so that the light of the pixels does not interfere with each other. Therefore, the display device 10 has good component characteristics.

In the above embodiments, the present invention is applied to a flip-chip type light-emitting diode as an example, but the present invention is not limited thereto, and therefore, the present invention will be described below as applied to a vertical light-emitting diode. In particular, the following is a description of the overall architecture of the display device. For a detailed description of the components, reference may be made to the foregoing description, and details are not described herein. 5A is a schematic cross-sectional view of a display device in accordance with an embodiment of the present disclosure, and FIG. 5B is a partial enlarged view of FIG. 5A. Referring to FIG. 5A and FIG. 5B simultaneously, the display device 10 includes a substrate 100 having a first electrode 120 and a second electrode 122, a light emitting diode 130, a first bump 150, a first insulating layer 160, and a second insulating layer 170. . In the present embodiment, the light emitting diode 130 is, for example, a micro vertical light emitting diode. Therefore, the light emitting diode 130 can be bonded to the substrate 100 by the first bump 150, and the second bump configuration is omitted. The first electrode 120 and the second electrode 122 are located on opposite sides of the LED 230, for example. That is, the first electrode 120, the first bump 150, the light emitting diode 130, and the second electrode 122 are stacked vertically on the substrate 100, for example. In the present embodiment, the first electrode 120 is electrically connected to the drain electrode 114, for example, the second electrode 122 is, for example, a common electrode, but the invention is not limited thereto.

In the present embodiment, the light emitting diode 130 has a structure as shown in FIG. 5B. Specifically, the light emitting diode 130 includes, for example, a first type electrode 136a, a first type semiconductor layer 132a, an active layer 134, a second type semiconductor layer 132b, and a second type electrode 136b. The first type electrode 136a is joined to the first electrode 120 by the first bump 150. The second electrode 136b can be directly connected to the second electrode 122. In the present embodiment, the light emitting diode 130 further includes, for example, an insulating layer 140 covering, for example, side surfaces of the first type electrode 136a, the first type semiconductor layer 132a, the active layer 134, and the second type semiconductor layer 132b. In the present embodiment, the first type electrode 136a is, for example, a conductor layer, and the material thereof includes, for example, nickel, silver, gold or the above alloy, but is not limited thereto. The second electrode 136b is, for example, a pad, and the material thereof includes, for example, chromium, platinum, gold, or the like, but is not limited thereto. The width of the light emitting diode 130 is, for example, between 5 micrometers and 200 micrometers, the thickness is, for example, between 1 micrometer and 20 micrometers, and the main light emitting area is about 10% to 60%, for example, to emit light. The width of the diode 130 is about 40 microns, and the main light exit area is about 16%. The light emitting diode 130 has opposite first and second surfaces 130a and 130b, wherein the first surface 130a and the second surface 130b are adjacent to and away from the substrate 100, respectively.

In the present embodiment, the first insulating layer 160 is disposed on the peripheral side of the first bump 150 and the light emitting diode 130, and is in contact with the first bump 150 and the first surface 130a. Further, in the present embodiment, the first insulating layer 160 further surrounds the sidewall of the light emitting diode 130. In the embodiment, the second insulating layer 170 is disposed on the substrate 100 and surrounds at least the outer side of the first insulating layer 160. In the present embodiment, the second insulating layer 170 exposes the second electrode 122. It is to be noted that in the embodiment, the first insulating layer 160 surrounds the sidewall of the LED 230, but the invention is not limited thereto. For example, in another embodiment, as shown in FIG. 6, the first insulating layer 160 may also expose sidewalls of the LEDs 130. Moreover, in an embodiment (not shown), the second insulating layer 170 may also be disposed to cover the light emitting diode 130 according to requirements.

In the present embodiment, the manufacturing method of the display device 10 includes, for example, the following steps, wherein the material and formation method of the film layer can be referred to in the previous embodiment, and the main difference is described herein. First, the second type semiconductor layer 132b, the active layer 134, the first type semiconductor layer 132a, and the first type electrode 136a are sequentially formed on an epitaxial substrate (not shown). Here, the material of the first type electrode 136a is, for example, a metal such as nickel, silver or platinum or a combination of a transparent conductive material and a Bragg reflector, but is not limited thereto. Next, an etching process is performed on the second type semiconductor layer 132b, the active layer 134, the first type semiconductor layer 132a, and the first type electrode 136a to form an island structure. Then, an insulating layer 140 is formed on the island structure.

Then, a first bump 150 is formed on the first electrode 136a, and a first insulating layer 160 is formed on the structure formed as described above. Next, the above structure is separated from the epitaxial substrate and bonded to the substrate 100. During the bonding, the first bump 150 and the first electrode 120 are further subjected to a heating process, wherein the first insulating layer 160 on the circumferential side of the first bump 150 and the light emitting diode 130 can buffer the bonding with the substrate 100. The force of time and the problem of avoiding mismatch in the coefficient of thermal expansion of the material.

After bonding the substrate 100, the second type electrode 136b is formed to complete the fabrication of the light emitting diode 130. Then, a second insulating layer 170 is formed on the substrate 100, which exposes at least a portion of the second type electrode 136b. Then, a second electrode 122 is formed on the second insulating layer 170, and is electrically connected to the second type electrode 136b. In addition, at least one of the first insulating layer 160 and the second insulating layer 170 covers the first electrode 120. Specifically, the first insulating layer 160 is, for example, an outer edge portion exposing the first electrode 120 and the second electrode 122, and the second insulating layer 170 covers the same.

In the above embodiment, the first insulating layer 160 is disposed on the peripheral side of the first bump 150 and the light emitting diode 130 and is in contact with the first bump 150 and the first surface 130a, thereby providing the light emitting diode 130 Supporting role. Furthermore, in the separating step in which the light emitting diode 130 is peeled off from the epitaxial substrate (not shown) and the bonding step in which the light emitting diode 130 is bonded to the substrate 100, the generated stress can be provided with a buffering function and slowed down. The thermal expansion coefficient of the material due to heating does not match. As a result, the display device 10 including the light-emitting diode 130 has a good yield. Moreover, since the first insulating layer 160 and the second insulating layer 170 surround the peripheral side of the light emitting diode 130 at the same time, the light emitting diode 130 can provide good protection effect. In addition, the first insulating layer 160 and the second insulating layer 170 also provide light-shielding effects to the light-emitting diodes 130, so that the light emitted by the pixels does not interfere with each other. Therefore, the display device 10 has good component characteristics. On the other hand, in the embodiment, the first insulating layer 160 exposes a portion of the first electrode 120 (ie, exposes the outer edge portion), but in an embodiment (not shown), the first insulating layer 160 may also cover the outer edge of the first electrode 120.

In summary, the first insulating layer of the present invention is disposed on the peripheral side of the bump and the light emitting diode and is in contact with the bump and the first surface to separate the light emitting diode from the epitaxial substrate and to bond with the substrate. The force of time to reduce the impact of stress on it. Furthermore, the first insulating layer can further surround the light emitting diode, so that the first insulating layer provides a good supporting function for the light emitting diode. In addition, the first insulating layer can be in contact with the outer surface of the substrate, so that the bump can be more stably fixed on the substrate, and the light emitting diode has good bonding with the substrate. On the other hand, the second insulating layer surrounds a portion of the first insulating layer and is disposed between the light emitting diodes, thereby also providing light-shielding or protection effects to the light-emitting diodes, so that the light of the pixels does not interfere with each other. Therefore, a display device including a light-emitting diode has good component characteristics or yield.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧ display device
100‧‧‧Substrate
102‧‧‧Substrate
104‧‧‧Active components
106‧‧‧ gate
108‧‧‧Brake insulation
110‧‧‧Channel layer
112‧‧‧ source
114‧‧‧汲polar
115‧‧‧ dielectric layer
116‧‧‧First protective layer
118‧‧‧Second protective layer
120‧‧‧first electrode
122‧‧‧second electrode
130‧‧‧Lighting diode
130a‧‧‧ first surface
130b‧‧‧second surface
131‧‧‧Undoped semiconductor layer
132a‧‧‧First type semiconductor layer
132b‧‧‧Second type semiconductor layer
134‧‧‧ active layer
136a‧‧‧first type electrode
136b‧‧‧Second type electrode
138‧‧‧ conductor layer
140‧‧‧Insulation
150‧‧‧First bump
152‧‧‧second bump
153‧‧‧First Expansion Department
154‧‧‧Second Extension
160‧‧‧First insulation
170‧‧‧Second insulation
S‧‧‧ epitaxial substrate
SP‧‧‧ accommodating space

1A is a cross-sectional view of a display device in accordance with an embodiment of the present disclosure. Fig. 1B is a partial enlarged view of Fig. 1A. 2A to 2G are schematic flow charts showing a method of fabricating a light emitting unit in the display device of FIG. 1B. 3A is a cross-sectional view of a display device in accordance with an embodiment of the present disclosure. FIG. 3B is a cross-sectional view of a display device in accordance with an embodiment of the present disclosure. 4 is a cross-sectional view of a display device in accordance with an embodiment of the present disclosure. FIG. 5A is a cross-sectional view of a display device in accordance with an embodiment of the present disclosure. Fig. 5B is a partial enlarged view of Fig. 5A. FIG. 6 is a cross-sectional view of a display device in accordance with an embodiment of the present disclosure.

10‧‧‧ display device

100‧‧‧Substrate

102‧‧‧Substrate

104‧‧‧Active components

106‧‧‧ gate

108‧‧‧Brake insulation

110‧‧‧Channel layer

112‧‧‧ source

114‧‧‧汲polar

115‧‧‧ dielectric layer

116‧‧‧First protective layer

118‧‧‧Second protective layer

120‧‧‧first electrode

122‧‧‧second electrode

130‧‧‧Lighting diode

130a‧‧‧ first surface

130b‧‧‧second surface

131‧‧‧Undoped semiconductor layer

132a‧‧‧First type semiconductor layer

132b‧‧‧Second type semiconductor layer

134‧‧‧ active layer

136a‧‧‧first type electrode

136b‧‧‧Second type electrode

138‧‧‧ conductor layer

140‧‧‧Insulation

150‧‧‧First bump

152‧‧‧second bump

160‧‧‧First insulation

170‧‧‧Second insulation

SP‧‧‧ accommodating space

Claims (20)

A display device comprising: a substrate; a light emitting diode having an opposite first surface and a second surface, wherein the first surface faces the substrate; a first bump, wherein the light emitting diode is via the light emitting diode The first bump is electrically connected to the substrate; a first insulating layer is disposed on the peripheral side of the first bump and the LED and is in contact with the first bump and the first surface; a second insulating layer disposed on the substrate and surrounding at least a portion of the first insulating layer. The display device of claim 1, wherein the substrate further comprises at least one first electrode, and the light emitting diode is electrically connected to the corresponding first electrode via the first bump. The display device of claim 2, wherein the substrate further comprises at least one second electrode, and the first electrode and the second electrode are located on the same side of the light emitting diode. The display device of claim 3, further comprising a second bump, each of the light emitting diodes being electrically connected to the first electrode and via the second bump via the first bump The block is electrically connected to the second electrode, and the first insulating layer is further disposed between the adjacent first bump and the second bump. The display device of claim 4, wherein the first insulating layer fills an accommodating space formed between the light emitting diode, the first bump, and the second bump. The display device of claim 5, wherein the first insulating layer further fills a gap between the first electrode and the second electrode. The display device of claim 3, wherein the first insulating layer is in contact with at least a portion of the substrate. The display device of claim 2, wherein at least one of the first insulating layer and the second insulating layer covers the at least one first electrode. The display device of claim 2, wherein the substrate further comprises at least one second electrode, and the first electrode and the second electrode are located on opposite sides of the light emitting diode. The display device of claim 9, wherein the second insulating layer exposes the second electrode. The display device of claim 1, wherein the first insulating layer surrounds at least a portion of the sidewall of the light emitting diode. The display device of claim 1, wherein the second insulating layer surrounds at least a portion of the first insulating layer. The display device of claim 1, wherein the material of the first insulating layer and the second insulating layer comprises a colloid or a resin, and the material of the second insulating layer comprises a transparent material, a black material or a white material. The display device of claim 1, wherein a top surface of the second insulating layer is not higher than the second surface of the light emitting diode. The display device of claim 1, wherein a top surface of the second insulating layer is higher than the second surface of the light emitting diode. A method of manufacturing a display device, comprising: forming at least one first bump electrically connected to the light emitting diode on a light emitting diode; forming a first insulating layer, wherein the first insulating layer is disposed at least a peripheral side of the first bump and contacting the same, and at least surrounding a portion of the light emitting diode; bonding the first bump to a first electrode of a substrate to bond the light emitting diode and the substrate And forming a second insulating layer on the substrate, wherein the second insulating layer surrounds at least a portion of the light emitting diode. The method of manufacturing the display device of claim 16, wherein the light emitting diode, the first bump, and the first insulating layer are formed on an epitaxial substrate, and the light is further included before bonding. The diode, the first bump, and the first insulating layer are separated from the epitaxial substrate. The method for manufacturing a display device according to claim 16, further comprising performing a heating process on the first bump and the first electrode during bonding. The method of manufacturing a display device according to claim 16, wherein the first insulating layer portion is formed around a sidewall of the light emitting diode. The method of manufacturing the display device of claim 16, further comprising forming a second electrode of the substrate electrically connected to the light emitting diode on the second insulating layer.