TWI488337B - Light-emitting device and fabrication method thereof - Google Patents

Description

Light-emitting element and manufacturing method thereof

The present invention relates to a light-emitting element and a method of fabricating the same, and more particularly to a semiconductor light-emitting element and a method of fabricating the same.

With the advancement of optoelectronic technology, the production and application of light-emitting diodes (LEDs) have gradually matured. Because the light-emitting diode has the advantages of low pollution, low power consumption, short response time and long service life, it has been gradually applied to various fields of light source or illumination instead of fluorescent tubes and incandescent lamps. Traditional light-emitting elements such as light bulbs or halogen lamps. Due to the increasing awareness of environmental protection in the world, in the future, LEDs are expected to become the main source of illumination, replacing the current status of fluorescent tubes.

In order to prevent the LED from being damaged by the electrostatic discharge, some conventional techniques connect the light-emitting diode to the Zener diode (ZD) when assembling the light source device, that is, use the Qi The nanodiode is used as an electrostatic discharge protection element. However, since the light-emitting diode is connected to the Zener diode when the light source device is assembled, the light-emitting diode is not protected by the electrostatic discharge protection element during packaging, transportation, die bonding, and wire bonding. As a result, the probability that the light-emitting diode is damaged by the electrostatic discharge is likely to increase.

Therefore, another conventional technique is to use the light-emitting diode and the electrostatic discharge protection component on the same wafer. This conventional technique can reduce the probability of the LED being damaged by electrostatic discharge, but the electrostatic discharge protection component Occupying a portion of the area on the substrate of the wafer, resulting in a decrease in the area occupied by the light-emitting diode. As a result, the light-emitting area of the light-emitting diode is also lowered, thereby reducing the performance of the light-emitting diode.

The invention provides a light-emitting element which has better luminous efficacy and is less susceptible to damage by electrostatic discharge.

The invention provides a method for fabricating a light-emitting element, which can effectively improve the luminous efficacy of the light-emitting element, and at the same time protect the light-emitting element from electrostatic discharge damage.

An embodiment of the present invention provides a light emitting device including a substrate, a light emitting structure region, an electrostatic discharge protection structure region, a trench, a conductive layer, a first electrode, and a second electrode. The light emitting structure region is formed on the substrate and includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. The electrostatic discharge protection structure region is formed on the substrate and includes a third semiconductor layer, an active layer and a fourth semiconductor layer. The trench is formed between the light emitting structure region and the electrostatic discharge protection structure region. The conductive layer is disposed on the trench and connects the light emitting structure region and the electrostatic discharge protection structure region. The first electrode is formed on the electrostatic discharge protection structure region and covers at least a portion of the electrostatic discharge protection structure region. The second electrode is formed on the light emitting structure region, and the second electrode does not extend onto the electrostatic discharge protection structure region.

Another embodiment of the present invention provides a light emitting device including a substrate, a light emitting structure region, an electrostatic discharge protection structure region, a trench, a conductive layer, and a first electrode. The light emitting structure region is formed on the substrate and includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. The electrostatic discharge protection structure region is formed on the substrate and includes a third semiconductor layer, an active layer, and a fourth semiconductor layer. The trench is formed between the light emitting structure region and the electrostatic discharge protection region. The conductive layer is disposed on the trench and connects the light emitting structure region and the electrostatic discharge protection structure region. The first electrode is formed on the area of the electrostatic discharge protection structure and covers a portion of the conductive layer.

Another embodiment of the present invention provides a method of fabricating a light-emitting element, comprising the following steps. A substrate is provided. A first semiconductor layer, an active layer and a second semiconductor layer are sequentially formed on the substrate. A semiconductor stack structure composed of the first semiconductor layer, the active layer and the second semiconductor layer is divided into at least one light emitting structure region and at least one electrostatic discharge protection structure region separated from each other. The area of the light emitting structure area is larger than the area of the electrostatic discharge protection structure area. Etching the partial light emitting structure region and the partial electrostatic discharge protection structure region such that the first semiconductor layer of the electrostatic discharge protection structure region forms one of the first platform portion and the first depressed portion, and the first semiconductor of the light emitting structure region is formed The layer forms a second platform portion and a second depressed portion, wherein the thickness of the first platform portion is greater than the thickness of the first depressed portion, and the thickness of the second platform portion is greater than the thickness of the second depressed portion. Forming a first insulating layer, wherein the first insulating layer covers a portion of the second semiconductor layer and a portion of the second depressed portion of the light emitting structure region. Forming a conductive layer on the first insulating layer, and electrically connecting the conductive layer to the second semiconductor layer of the light emitting structure region and the first semiconductor layer of the electrostatic discharge protection structure region, wherein the first insulating layer separates the first region of the light emitting structure region a semiconductor layer and a conductive layer, and separating the active layer and the conductive layer of the light emitting structure region. Forming a second insulating layer, wherein the second insulating layer covers a portion of the second semiconductor layer and at least a portion of the first depressed portion of the electrostatic discharge protection structure region. Forming a first electrode on the second insulating layer, and electrically connecting the first electrode to the first semiconductor layer of the light emitting structure region and the second semiconductor layer of the electrostatic discharge protection structure region, wherein the second insulating layer separates the conductive layer from the first An electrode separates the first semiconductor layer and the first electrode of the electrostatic discharge protection structure region, and separates the active layer of the electrostatic discharge protection structure region from the first electrode. The first electrode covers at least a portion of the second semiconductor layer and at least a portion of the first depressed portion of the electrostatic discharge protection structure region.

In the light-emitting element of the embodiment of the present invention, since the conductive layer connecting the electrostatic discharge protection structure region and the light-emitting structure region is partially located under the first electrode, the area of the light-emitting layer is less than that due to the electrostatic discharge protection structure region. Since the light-emitting element of the embodiment of the present invention has the function of electrostatic discharge protection, it also has better luminous efficiency. In addition, in the light-emitting element of the embodiment of the present invention, since the second electrode does not extend to the electrostatic discharge protection structure region, the light-shielding area of the second electrode due to the shielding of the light-emitting layer can be effectively reduced, thereby improving the light-emitting element. Luminous performance. Furthermore, in the method of fabricating the light-emitting device of the embodiment of the present invention, since at least a portion of the second semiconductor layer and at least a portion of the first depressed portion of the electrostatic discharge protection structure region are located under the first electrode, the area of the light-emitting layer is less Because the electrostatic discharge protection structure region is used, the method for fabricating the light-emitting device of the embodiment of the present invention can improve the electrostatic discharge protection effect of the light-emitting device, and can also have better light-emitting performance.

The above described features and advantages of the present invention will be more apparent from the following description.

1A to 7A are schematic top views showing the flow of a light-emitting element according to an embodiment of the present invention, and FIGS. 1B to 7B are cross-sectional views of the structure of FIGS. 1A to 7A taken along line II, respectively, and FIG. 1C to FIG. 7C is a schematic cross-sectional view taken along line II-II of the structure of FIGS. 1A to 7A, respectively. Referring to FIG. 1A to FIG. 7C in sequence, the method for fabricating the light-emitting element of the present embodiment includes the following steps. First, as shown in FIG. 1A to FIG. 1C, a substrate 110 is provided. In the present embodiment, the substrate 110 is, for example, a sapphire substrate. However, in other embodiments, the substrate 110 can also be a tantalum carbide substrate, a gallium nitride substrate, or other suitable substrate. Then, a doped semiconductor layer 52, an active layer 54 and a doped semiconductor layer 56 are sequentially formed on the substrate 110, wherein the doped state of the doped semiconductor layer 52 and the doped semiconductor layer 56 are different. For example, in the present embodiment, the doped semiconductor layer 52 is an n-type semiconductor layer 52, such as an N-type gallium nitride layer, and the doped semiconductor layer 56 is P-type. The semiconductor layer 56 is, for example, a P-type gallium nitride layer. However, in other embodiments, the doped semiconductor layer 52 may be a P-type semiconductor layer, and the doped semiconductor layer 56 may be an N-type semiconductor layer. Further, the active layer 54 is, for example, a quantum well layer or a multiple quantum well layer. For example, the active layer 54 can include an indium gallium nitride (InGaN) layer and a gallium nitride (GaN) layer that are alternately stacked. In this embodiment, a buffer layer (not shown) may be formed before the doped semiconductor layer 52 is formed, and then the doped semiconductor layer 52 is formed on the buffer layer, so that the doped semiconductor layer 52 can be lifted. Epitaxial quality.

Then, as shown in FIG. 2A to FIG. 2C, a semiconductor stacked structure composed of the doped semiconductor layer 52, the active layer 54 and the doped semiconductor layer 56 is divided into at least one light emitting structure region 200 and at least one static electricity separated from each other. The discharge protection structure region 300. For example, a plurality of trenches G may be etched from the semiconductor stacked structure to divide the semiconductor stacked structure into a plurality of sets of light emitting structure regions and electrostatic discharge protection structure regions 300 separated from each other, and in the figure, a light is emitted. The structural region 200 and its corresponding electrostatic discharge protection structure region 300 are taken as an example for illustration. Further, the above etching is performed, for example, by a photolithography and etching process.

For convenience of explanation, the doped semiconductor layer 52, the active layer 54 and the doped semiconductor layer 56 of the light-emitting structure region 200 which are divided into the following are referred to as a first semiconductor layer 210, a light-emitting layer 220, and a second semiconductor layer 230, respectively. The doped semiconductor layer 52, the active layer 54 and the doped semiconductor layer 56 of the divided electrostatic discharge protection structure region 300 are referred to as a third semiconductor layer 310, an active layer 320, and a fourth semiconductor layer 330, respectively. However, in other embodiments, the light emitting structure region 200 and the electrostatic discharge protection structure region 300 separated from each other, and the first semiconductor layer 210, the light emitting layer 220, and the second semiconductor of the light emitting structure region 200 may also be formed on the substrate 110. The material of the layer 230 is different from the material of the third semiconductor layer 310, the active layer 320, and the fourth semiconductor layer 330 of the electrostatic discharge protection structure region 300, respectively.

Then, as shown in FIG. 3A to FIG. 3C , the partial light emitting structure region 200 and the partial electrostatic discharge protection structure region 300 are etched such that the third semiconductor layer 310 is formed to be connected to one of the first platform portion 312 and the first depressed portion. 314, and the first semiconductor layer 210 is formed to be connected to one of the second platform portion 212 and a second depressed portion 214, wherein the thickness T1 of the first platform portion 312 is greater than the thickness T2 of the first depressed portion 314, and the second platform The thickness T3 of the portion 212 is greater than the thickness T4 of the second depressed portion 214. In addition, in the embodiment, the light emitting layer 220 and the second semiconductor layer 230 are disposed on the second platform portion 212 and the second depressed portion 214 is exposed. In addition, the active layer 320 and the fourth semiconductor layer 330 are disposed on the first platform portion 312 and expose the first depressed portion 314. The etching illustrated in FIGS. 3A to 3C is performed, for example, by a photolithography and etching process.

In this embodiment, a first transparent conductive layer 260 may be formed on the second semiconductor layer 230, and a second transparent conductive layer 340 may be formed on the fourth semiconductor layer 330, wherein the first transparent conductive layer 260 and the second The material of the transparent conductive layer 340 is, for example, indium tin oxide (ITO). However, in other embodiments, the materials of the first transparent conductive layer 260 and the second transparent conductive layer 340 may be other suitable transparent conductive materials. material. In this embodiment, the first transparent conductive layer 260 and the second transparent conductive layer 340 may be formed by forming a transparent conductive layer covering the entire surface to cover the light emitting structure region 200 and the electrostatic discharge protection structure region 300, and then The transparent conductive layer covered by the entire surface is etched into the first transparent conductive layer 260 and the second transparent conductive layer 340 separated from each other by a photolithography method.

Then, as shown in FIG. 4A to FIG. 4C , a first insulating layer 120 is formed, wherein the first insulating layer 120 covers a portion of the second semiconductor layer 230 and a portion of the second depressed portion 214 . In the present embodiment, the first insulating layer 120 is, for example, a silicon dioxide (SiO ₂ ) layer. However, in other embodiments, the first insulating layer 120 may also be other suitable insulating layers. In the embodiment, the first insulating layer 120 also covers a portion of the substrate 110 and a portion of the first transparent conductive layer 260.

Then, as shown in FIG. 5A to FIG. 5C , a conductive layer 140 is formed on the first insulating layer 120 , and the conductive layer 140 is electrically connected to the second semiconductor layer 230 and the third semiconductor layer 310 . In this embodiment, the conductive layer 140 is a metal conductive layer, such as a gold or gold-containing composite metal layer. In this embodiment, the first transparent conductive layer 260 is electrically connected to the second semiconductor layer 230 and the conductive layer 140. In other words, one end of the conductive layer 140 is connected to the second semiconductor layer 230 via the transparent conductive layer 260. Further, the other end of the conductive layer 140 is connected to the third semiconductor layer 310, for example, to the first depressed portion 314. Furthermore, the first insulating layer 120 separates the first semiconductor layer 210 from the conductive layer 140 and separates the light emitting layer 220 from the conductive layer 140. In the present embodiment, the first insulating layer 120 also separates the second semiconductor layer 230 from the conductive layer 140 , and the conductive layer 140 is electrically connected to the second semiconductor layer 230 by the first transparent conductive layer 260 .

After that, as shown in FIG. 6A to FIG. 6C , a second insulating layer 130 is formed, wherein the second insulating layer 130 covers a portion of the fourth semiconductor layer 330 and at least a portion of the first depressed portion 314 of the electrostatic discharge protection structure region 300 . . In FIG. 6A to FIG. 6C , the second insulating layer 130 covers the entire first depressed portion 314 as an example. However, in other embodiments, the second insulating layer 130 may also cover a portion of the first depressed portion 314 . In this embodiment, the material of the second insulating layer 130 is, for example, cerium oxide. However, in other embodiments, the material of the second insulating layer 130 may also be other suitable insulating materials.

Next, as shown in FIG. 7A to FIG. 7C, a first electrode 240 is formed on the second insulating layer 130, and the first electrode 240 is electrically connected to the first semiconductor layer 210 and the fourth semiconductor layer 330. In this embodiment, the first electrode 240 is a metal electrode, such as a gold or gold-containing composite metal layer. In addition, in the embodiment, the second transparent conductive layer 340 is electrically connected to the fourth semiconductor layer 330 and the first electrode 240. In other words, the first electrode 240 is connected to the fourth semiconductor layer 330 by the second transparent conductive layer 340. In addition, the second insulating layer 130 separates the conductive layer 140 from the first electrode 240, separates the third semiconductor layer 310 of the electrostatic discharge protection structure region 300 from the first electrode 240, and separates the active layer 320 and the first layer of the electrostatic discharge protection structure region 300. An electrode 240. In the present embodiment, the second insulating layer 130 also separates the fourth semiconductor layer 330 of the ESD protection structure region 300 from the first electrode 240, and the first electrode 240 is electrically connected to the second transparent conductive layer 340. Four semiconductor layers 330.

In the present embodiment, the first electrode 240 covers at least a portion of the fourth semiconductor layer 330 and at least a portion of the first depressed portion 314 of the electrostatic discharge protection structure region 300. In FIG. 7A to FIG. 7C , the first electrode 240 covers a portion of the fourth doped semiconductor layer 330 and the entire first depressed portion 314 as an example. However, in other embodiments, the first electrode 240 may cover the entire portion. The four doped semiconductor layer 330 and the entire first depressed portion 314 cover a portion of the fourth doped semiconductor layer 330 and a portion of the first depressed portion 314 or cover the entire fourth doped semiconductor layer 330 and a portion of the first depressed portion 314. Further, in the present embodiment, the first electrode 240 covers a portion of the conductive layer. Furthermore, a second electrode 250 may be formed on the second semiconductor layer 230 of the light emitting structure region 200 while forming the first electrode 240. In this embodiment, a second electrode is formed on the first transparent conductive layer 260. Electrode 250. In this embodiment, the second electrode 250 is a metal electrode, such as a gold or gold-containing composite metal layer. Thus, the light-emitting element 100 of the present embodiment can be completed.

In this embodiment, the first electrode 240 and the second electrode 250 can be electrically connected to an external power source via two bonding wires respectively by wire bonding. Alternatively, in other embodiments, the first electrode 240 and the second electrode 250 may also be electrically connected to the external power source via two conductive bumps by using a flip chip package.

The light emitting device 100 of the present embodiment includes a substrate 110, a light emitting structure region 200, an electrostatic discharge protection structure region 300, a first insulating layer 120, a conductive layer 140, and a second insulating layer 130, wherein the light emitting structure region 200 includes the first semiconductor layer 210. The light emitting layer 220, the second semiconductor layer 230, the first transparent conductive layer 260, the first electrode 240, and the second electrode 250, and the electrostatic discharge protection structure region 300 includes a third semiconductor layer 310, an active layer 320, and a fourth semiconductor layer 330 and a second transparent conductive layer 260. The light emitting structure region 200 is formed on the substrate 110, and the electrostatic discharge protection structure region 300 is formed on the substrate 110. The trench G is formed between the light emitting structure region 200 and the electrostatic discharge protection structure region 300. The conductive layer 140 is disposed on the trench G and connects the light emitting structure region 200 and the electrostatic discharge protection structure region 300. The first electrode 240 is formed on the electrostatic discharge protection structure region 300 and covers at least a portion of the electrostatic discharge protection structure region 300. The second electrode 250 is formed on the light emitting structure region 200, and in the present embodiment, the second electrode 250 does not extend onto the electrostatic discharge protection structure region 300. The first insulating layer 120 is formed on the light emitting structure region 200, and the second insulating layer 130 is formed on the conductive layer 140. Further detailed relative positions and materials of these film layers and structures can be referred to the above description, and will not be repeated herein.

In the light-emitting element 100 of the embodiment, since at least a portion of the first depressed portion 314 and at least a portion of the fourth semiconductor layer 330 of the electrostatic discharge protection structure region 300 are located under the first electrode 240 of the light-emitting structure region 200, the light-emitting layer 320 is The area is less reduced due to the use of the electrostatic discharge protection structure region 300. In addition, since the third semiconductor layer 310 connecting the electrostatic discharge protection structure region 300 and the conductive layer 140 of the second semiconductor layer 230 of the light emitting structure region 200 are partially located under the first electrode 240, the area of the light emitting layer 320 is less likely to be The electrostatic discharge protection structure region 300 is used and reduced. In this way, the light-emitting element 100 of the embodiment can have the function of electrostatic discharge protection and also has better luminous efficacy. In addition, in the light-emitting element 100 of the present embodiment, since the second electrode 250 does not extend to the electrostatic discharge protection structure region 300, the light-shielding area of the second electrode 250 due to the shielding of the light-emitting layer 320 can be effectively reduced, thereby improving The luminous efficacy of the light-emitting element 100.

In the manufacturing method of the light emitting device 100 of the present embodiment, since at least a portion of the fourth semiconductor layer 330 and at least a portion of the first depressed portion 314 of the electrostatic discharge protection structure region 300 are located under the first electrode 240, the area of the light emitting layer 320 is relatively smaller. Therefore, the method for fabricating the light-emitting element 100 of the present embodiment can improve the electrostatic discharge protection effect of the light-emitting element 100, and also enable the light-emitting element 100 to have better luminous efficacy while reducing the electrostatic discharge protection structure region 300. .

In addition, in the light-emitting element 100 of the present embodiment and the manufacturing method thereof, since the light-emitting structure region 200 and the electrostatic discharge protection structure region 300 are formed on the substrate 110 together, the light-emitting structure region 200 can be protected early, and the light-emitting element 100 can be made. It is not damaged by electrostatic discharge during packaging, packaging, transportation, die bonding and wire bonding, and in particular, can protect the light-emitting element 100 from reverse electrostatic discharge.

In order to further increase the light-emitting area of the light-emitting element 100, in the present embodiment, the first electrode 240 may be covered by an area greater than 90% of the electrostatic discharge protection structure region 300 (or a semiconductor region completely covering the electrostatic discharge protection structure region), wherein The area of the electrostatic discharge protection structure region 300 herein refers to the area occupied by the electrostatic discharge protection structure region 300 as seen from the direction of the upper view of FIG. 7A. As a result, the light-emitting area of the light-emitting element 100 of the present embodiment can be less than the loss of the light-emitting area after the electrostatic discharge protection structure region 300 is used, compared to the light-emitting area of the light-emitting diode chip that does not use the electrostatic discharge protection structure region. 3%. Therefore, the light-emitting element 100 of the present embodiment can maintain a good luminous efficacy while having an electrostatic discharge protection function. Further, in the present embodiment, the maximum outer diameter of the area occupied by the first electrode 240 and the second electrode 250 (i.e., the area in the direction of the upper view of FIG. 7A) is, for example, about 90 μm.

In addition, in this embodiment, the surface of the light emitting structure region 200 further includes a light emitting surface that is not covered by the first electrode and the second electrode, wherein the light emitting surface area of the light emitting structure region 200 is at least the electrostatic discharge protection structure region 300. More than 3 times the area. Therefore, the light-emitting area can be effectively improved, thereby improving the optical performance of the light-emitting element 100 of the present embodiment.

In summary, in the light-emitting element of the embodiment of the present invention, since at least a portion of the first depressed portion and at least a portion of the fourth semiconductor layer of the electrostatic discharge protection structure region are located under the first electrode of the light-emitting structure region, the light-emitting layer The area is less reduced due to the use of electrostatic discharge protection structure areas. In addition, since the third semiconductor layer connecting the electrostatic discharge protection structure region and the second semiconductor layer of the light emitting structure region are partially located under the first electrode, the area of the light-emitting layer is less than that due to the electrostatic discharge protection structure region. And shrinking. In this way, the light-emitting element of the embodiment of the present invention can have a function of electrostatic discharge protection and also has better luminous efficacy. Furthermore, in the light-emitting element of the embodiment of the present invention, since the second electrode does not extend to the electrostatic discharge protection structure region, the light-shielding area of the second electrode due to the shielding of the light-emitting layer can be effectively reduced, thereby improving the light-emitting element. Luminous performance.

In the method of fabricating the light-emitting device of the embodiment of the present invention, since at least a portion of the fourth semiconductor layer and at least a portion of the first depressed portion of the electrostatic discharge protection structure region are located under the first electrode, the area of the light-emitting layer is less likely to be adopted. The electrostatic discharge protection structure region is reduced. Therefore, the method for fabricating the light-emitting element of the embodiment of the present invention can improve the electrostatic discharge protection effect of the light-emitting element, and can also have a better light-emitting performance.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

52, 56. . . Doped semiconductor layer

54, 320. . . Active layer

110. . . Substrate

120. . . First insulating layer

130. . . Second insulating layer

140. . . Conductive layer

200. . . Light-emitting structure area

210. . . First semiconductor layer

212. . . Second platform department

214. . . Second depression

220. . . Luminous layer

230. . . Second semiconductor layer

240. . . First electrode

250. . . Second electrode

260. . . First transparent conductive layer

300. . . Electrostatic discharge protection structure area

310. . . Third semiconductor layer

312. . . First platform department

314. . . First depression

330. . . Fourth semiconductor layer

340. . . Second transparent conductive layer

G. . . Trench

T1 ~ T4. . . thickness

1A to 7A are schematic top views showing the flow of a light-emitting element according to an embodiment of the present invention.

1B to 7B are schematic cross-sectional views of the structure of Figs. 1A to 7A taken along line I-I, respectively.

1C to 7C are schematic cross-sectional views of the structure of Figs. 1A to 7A taken along line II-II, respectively.

110. . . Substrate

130. . . Second insulating layer

200. . . Light-emitting structure area

210. . . First semiconductor layer

212. . . Second platform department

214. . . Second depression

220. . . Luminous layer

230. . . Second semiconductor layer

240. . . First electrode

250. . . Second electrode

260. . . First transparent conductive layer

300. . . Electrostatic discharge protection structure area

310. . . Third semiconductor layer

312. . . First platform department

314. . . First depression

320. . . Active layer

330. . . Fourth semiconductor layer

340. . . Second transparent conductive layer

T1 ~ T4. . . thickness

Claims (17)

A light-emitting element comprises: a substrate; a light-emitting structure region comprising a light-emitting layer; an electrostatic discharge protection structure region formed on the substrate and comprising an active layer; a trench formed in the light-emitting structure region and the An electrostatic discharge protection structure region; a conductive layer disposed on the trench and connecting the light emitting structure region and the electrostatic discharge protection structure region; and a first electrode formed on the electrostatic discharge protection structure region and covering The electrostatic discharge protects the structural region from at least a portion of the conductive layer. The light-emitting element of claim 1, further comprising a first insulating layer formed on the light-emitting structure region. The light-emitting element of claim 1, further comprising a second insulating layer formed on the conductive layer. The light-emitting element of claim 1, wherein the light-emitting structure region further comprises a first transparent conductive layer disposed on the light-emitting layer And electrically connected to the conductive layer. The light-emitting element of claim 1, wherein the first electrode covers an area greater than 90% of the area of the electrostatic discharge protection structure. The light-emitting element according to claim 1, further comprising a second electrode formed on the light-emitting structure region but not extending to the electrostatic discharge protection structure region. The light-emitting element of claim 1, wherein the light-emitting structure region further comprises a light-emitting surface, the light-emitting surface having an area of at least three times the area of the electrostatic discharge protection structure. A light-emitting element comprises: a substrate; a light-emitting structure region formed on the substrate and comprising a light-emitting layer; an electrostatic discharge protection structure region formed on the substrate and comprising an active layer; a trench formed between the light emitting structure region and the electrostatic discharge protection structure region and surrounding the electrostatic discharge protection structure region; a conductive layer disposed on the trench and connecting the light emitting structure region and the electrostatic discharge a protective structure region; and a first electrode formed on the electrostatic discharge protection structure region and covering a portion of the conductive layer. The light-emitting element of claim 8, further comprising a first insulating layer, wherein the first insulating layer is formed on the light-emitting structure region. The light-emitting element of claim 8, further comprising a second insulating layer, wherein the second insulating layer is formed on the conductive layer. The light-emitting element of claim 8, wherein the first electrode covers an area greater than 90% of the area of the electrostatic discharge protection structure. The illuminating device of claim 8, further comprising a second electrode formed on the illuminating structure region but not extending to the static electricity Discharge protection structure area. The light-emitting element of claim 8, wherein the light-emitting structure region further comprises a light-emitting surface having an area of at least three times the area of the electrostatic discharge protection structure. A method for fabricating a light emitting device, comprising: providing a substrate; forming a semiconductor stacked structure on the substrate, the semiconductor stacked structure comprising a first semiconductor layer, an active layer and a second semiconductor layer; and dividing the semiconductor stacked structure Forming at least one light emitting structure region and at least one electrostatic discharge protection structure region; etching the portion of the light emitting structure region and a portion of the electrostatic discharge protection structure region to form a first platform portion, a first depressed portion, a second platform portion, and a a second recessed portion; a first insulating layer is formed to cover a portion of the light emitting structure; a conductive layer is formed on the first insulating layer; a second insulating layer is formed, wherein the second insulating layer covers a portion of the electrostatic discharge protection structure And forming a first electrode on the second insulating layer, the first electrode electrically connecting the light emitting structure region and the electrostatic discharge protection structure region, and covering a portion of the conductive layer. The method for fabricating a light-emitting device according to claim 14, wherein the first insulating layer separates the first semiconductor layer and the conductive layer of the light-emitting structure region, and the active layer separating the light-emitting structure region and the Conductive layer. The method for fabricating a light-emitting device according to claim 14, further comprising: forming a second electrode on the second semiconductor layer of the light-emitting structure region while forming the first electrode. The method of fabricating a light-emitting device according to claim 14, wherein the first electrode covers an area greater than 90% of the area of the electrostatic discharge protection structure.