TW201742105A - Substrate processing apparatus substrate processing method and recording medium - Google Patents

Substrate processing apparatus substrate processing method and recording medium Download PDF

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TW201742105A
TW201742105A TW106104280A TW106104280A TW201742105A TW 201742105 A TW201742105 A TW 201742105A TW 106104280 A TW106104280 A TW 106104280A TW 106104280 A TW106104280 A TW 106104280A TW 201742105 A TW201742105 A TW 201742105A
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exhaust
pressure
substrate processing
pressure measuring
measuring unit
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TW106104280A
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TWI689970B (en
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Masayuki Kajiwara
Ryoji Ando
Youichi Masaki
Hiroichi Inada
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

According to the present invention, when atmosphere of a plurality of substrate processing units in which the atmosphere including attachment components is generated is discharged through a common exhaust path, defects of an individual exhaust path of each substrate processing unit can be certainly detected. When a plurality of resist coating units (10A-10D) for coating a wafer (W) with resist are exhausted through a common exhaust path (60) for discharging air by an exhaust manly strength facility, exhaust pressure of individual exhaust pipes (50A-50D) of each of the resist coating units (10A-10D) and exhaust pressure of the common exhaust path (60) are measured, and allowed pressure ranges corresponding to the measured values are compared. Thus, defects such as clogging or the like of an attachment material in the individual exhaust pipes (50A-50D) can be certainly detected.

Description

基板處理裝置、基板處理方法及記憶媒體 Substrate processing device, substrate processing method, and memory medium

本發明係關於在基板處理中將基板之氛圍予以排氣的技術。 The present invention relates to a technique for exhausting the atmosphere of a substrate during substrate processing.

在作為半導體製造工程之一個的光阻工程中，進行在半導體晶圓(以下，稱為(晶圓)之表面塗佈抗蝕等之各塗佈液的塗佈處理。例如，抗蝕塗佈裝置使用以包圍作為基板之保持部的旋轉夾具之周圍的方式設置杯體的杯體模組，對旋轉夾具上之晶圓滴下抗蝕液等之塗佈液，使晶圓旋轉而在其全面形成塗佈膜。此時，當從晶圓被甩乾的抗蝕液與杯體之壁面衝突時，抗蝕液成為細小的粒子(霧氣)，有霧氣附著於晶圓而被污染之虞。因此，杯體連接排氣管，進行晶圓之周圍之氛圍的排氣，抑制霧氣所致的污染。而且，例如將個別連接於複數之杯體的個別排氣管連接於成為根源之共通排氣路徑，藉由工場動力將共通排氣路徑予以排氣，依此進行各杯體之排氣。 In a photoresist process which is one of semiconductor manufacturing projects, coating processing of each coating liquid such as resist is applied to a surface of a semiconductor wafer (hereinafter referred to as (wafer). For example, resist coating The cup body module of the cup body is provided so as to surround the rotating jig which is the holding portion of the substrate, and the coating liquid such as the resist liquid is dropped on the wafer on the rotating jig to rotate the wafer in the whole At this time, when the resist liquid that has been dried from the wafer collides with the wall surface of the cup, the resist liquid becomes fine particles (mist), and the mist adheres to the wafer and is contaminated. Therefore, the cup is connected to the exhaust pipe, and the atmosphere around the wafer is exhausted to suppress contamination by the mist. Further, for example, individual exhaust pipes individually connected to the plurality of cups are connected to a common row that becomes the root source. In the gas path, the common exhaust path is exhausted by the power of the workshop, and the exhaust of each cup is performed accordingly.

然而，當杯體之排氣流量減少時，霧氣無被充分排氣，有附著於晶圓之虞。因此，雖然以監視被連接 於杯體之個別排氣管之排氣流量為佳，但是難以在個別排氣管設置流量計，藉由在個別排氣管設置壓力測量部而測量排氣壓，間接地監視排氣流量。例如，排氣壓之測量值上升時，藉由設置在個別排氣管之排氣調節風門，縮小排氣路徑之傳導率使排氣流量安定。 However, when the exhaust flow rate of the cup is reduced, the mist is not sufficiently exhausted and there is a flaw attached to the wafer. So although connected by monitoring It is preferable that the exhaust flow rate of the individual exhaust pipes of the cup is good, but it is difficult to provide a flow meter in the individual exhaust pipes, and the exhaust pressure is measured by providing a pressure measuring unit in each of the exhaust pipes, and the exhaust flow rate is indirectly monitored. For example, when the measured value of the exhaust pressure rises, the exhaust gas flow rate is stabilized by reducing the conductivity of the exhaust path by the exhaust damper provided in the individual exhaust pipes.

但是，個別排氣管之排氣壓不僅增減工場動力，也因霧氣朝每杯體模組之個別排氣路徑(杯內或個別排氣管)附著所致的堵塞而變動。因此，當在杯體內產生堵塞之時，排氣壓之測量值與增加工場動力之情況相同變高，作用於排氣調節風門縮小排氣路徑之傳導率的方向而導致排氣流量之不足，有無法充分謀求基板之污染防止之虞。 However, the exhaust pressure of individual exhaust pipes not only increases or decreases the power of the workshop, but also changes due to the clogging caused by the adhesion of the mist to the individual exhaust paths (inside the cup or individual exhaust pipes) of each cup module. Therefore, when a blockage occurs in the cup body, the measured value of the exhaust pressure becomes higher as in the case of increasing the power of the workshop, and the exhaust gas regulating damper reduces the direction of the conductivity of the exhaust path, resulting in insufficient exhaust flow. It is impossible to fully prevent the contamination of the substrate.

專利文獻1中記載有測量個別地被設置在複數之加熱裝置的個別排氣管之壓力，同時記載在個別排氣管合流之主排氣管設置壓力計的構成，記載著檢測加熱裝置之排氣系統之異常的技術。但是，針對區別加熱裝置中之排氣之異常的主要原因的手法，並無記載。 Patent Document 1 describes a configuration in which a pressure of an individual exhaust pipe that is individually provided in a plurality of heating devices is measured, and a configuration in which a pressure gauge is provided in a main exhaust pipe where individual exhaust pipes are combined, and a row in which a heating device is detected is described. Abnormal technology of the gas system. However, there is no description on the method of distinguishing the cause of the abnormality of the exhaust gas in the heating device.

〔先行技術文獻〕 [prior technical literature] 〔專利文獻〕 [Patent Document]

〔專利文獻1〕日本特開2000-260680號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-260680

本發明係鑒於如此之情形下而創作出，其目的在於提供將產生包含附著成分之氛圍的複數之基板處理部之氛圍通過共通的排氣路徑而予以排氣時，可以確實地檢測出每個基板處理部之個別排氣路徑之異常的技術。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide an atmosphere in which a plurality of substrate processing units that generate an atmosphere containing an adherent component are exhausted through a common exhaust path, and each of them can be reliably detected. A technique for abnormality of individual exhaust paths of the substrate processing unit.

本發明之基板處理裝置，其特徵在於具備：複數之基板處理部，其係進行產生包含附著成分之氛圍之基板處理；個別排氣路徑，其係個別地被設置在上述複數之基板處理部，用以將在該基板處理部中之基板的氛圍予以排氣；共通排氣路徑，其係上述個別排氣路徑之各個合流，藉由排氣動力設備被排氣；第1壓力測量部，其係被設置在上述個別排氣路徑之各個，用以測量上述個別排氣路徑之排氣壓；第2壓力測量部，其係被設置在上述共通排氣路徑，用以測量該共通排氣路徑之排氣壓；及異常檢測部，其係根據上述第1壓力測量部之測量值和第1容許壓力範圍之比較結果，和上述第2壓力測量部之測量值和第2容許壓力範圍之比較結果，檢測出在個別排氣路徑中的異常。 A substrate processing apparatus according to the present invention includes a plurality of substrate processing units that perform substrate processing for generating an atmosphere containing an adherent component, and individual exhaust paths that are individually provided in the plurality of substrate processing units. An atmosphere for exhausting a substrate in the substrate processing unit; a common exhaust path that is merged by each of the individual exhaust paths, and is exhausted by an exhaust power device; and a first pressure measuring unit Each of the individual exhaust paths is configured to measure an exhaust pressure of the individual exhaust paths; and a second pressure measuring unit is disposed in the common exhaust path for measuring the common exhaust path. The exhaust gas pressure and the abnormality detecting unit are based on a comparison result between the measured value of the first pressure measuring unit and the first allowable pressure range, and a comparison result between the measured value of the second pressure measuring unit and the second allowable pressure range. Anomalies in individual exhaust paths are detected.

本發明之基板處理方法，其特徵在於具備：在基板處理部，進行產生包含附著成分之氛圍的基板處理 之工程；藉由個別地被設置在複數之基板處理部，用以將在該基板處理部中之基板之氛圍予以排氣之個別排氣路徑，和上述個別排氣路徑之各個合流，藉由排氣動力設備被排氣之共通排氣路徑，將基板處理部之氛圍予以排氣之工程；藉由個別地被設置在上述個別排氣路徑之第1壓力測量部測量個別排氣路徑之排氣壓之工程；藉由被設置在上述共通排氣路徑之第2壓力測量部，測量在共通排氣路徑流通之排氣的排氣壓之工程；及根據各個的第1壓力測量部之測量值和第1容許壓力範圍之比較結果，和第2壓力測量部之測量值和第2容許壓力範圍之比較結果，檢測出在個別排氣路徑中的異常之工程。 A substrate processing method according to the present invention is characterized in that: the substrate processing unit performs substrate processing for generating an atmosphere containing an adherent component The project is provided in a plurality of substrate processing units, and an individual exhaust path for exhausting the atmosphere of the substrate in the substrate processing unit is merged with each of the individual exhaust paths. a process in which the atmosphere of the substrate processing unit is exhausted by the common exhaust path of the exhaust power device, and the row of the individual exhaust paths is individually measured by the first pressure measuring unit provided in the individual exhaust path The project of the air pressure; the second pressure measuring unit provided in the common exhaust path, the exhaust gas pressure of the exhaust gas flowing through the common exhaust path; and the measured value of each of the first pressure measuring units The result of the comparison of the first allowable pressure range and the comparison between the measured value of the second pressure measuring unit and the second allowable pressure range detect an abnormality in the individual exhaust path.

本發明之記憶媒體係記憶有被使用於基板處理裝置之電腦程式的記憶媒體，該基板處理裝置具備個別地被設置在進行產生包含附著成分之氛圍的基板處理之複數之基板處理部，用以將在該基板處理部中之基板之氛圍予以排氣之個別排氣路徑，和個別排氣路徑之各個合流，藉由排氣動力設備被排氣之共通排氣路徑，其特徵在於上述電腦程式係以實施上述基板處理方法之方式組成步驟群。 The memory medium of the present invention stores a memory medium used in a computer program of a substrate processing apparatus, and the substrate processing apparatus includes a substrate processing unit that is individually provided in a plurality of substrates for generating an atmosphere containing an adherent component, and is used for a common exhaust path in which an atmosphere of a substrate in the substrate processing unit is exhausted, and an individual exhaust path merge, and a common exhaust path through which the exhaust power device is exhausted is characterized by the computer program The step group is formed in such a manner that the above substrate processing method is carried out.

本發明係在將進行產生包含附著成分之氛圍 的基板處理的複數之基板處理部，經由藉由排氣動力設備而被排氣的共通排氣路徑而予以排氣時，測量每個基板處理部之個別排氣路徑之排氣壓，和共通排氣路徑之排氣壓，且比較與各測量值對應之容許壓力範圍。因此，可以確實地檢測出在個別排氣路徑中之附著物之堵塞等之異常。另外，個別排氣路徑係指形成有將基板處理部之氛圍予以排氣的流路之部位，例如，在進行液處理的杯體模組之情況，包含杯體內之流路及被連接於該杯體之個別排氣管。 The present invention is to produce an atmosphere containing an attached component When a plurality of substrate processing units for substrate processing are exhausted via a common exhaust path that is exhausted by an exhaust power device, the exhaust pressure of each individual exhaust path of each substrate processing unit is measured, and a common row is measured. The exhaust pressure of the gas path, and the allowable pressure range corresponding to each measured value is compared. Therefore, abnormalities such as clogging of the deposits in the individual exhaust paths can be reliably detected. In addition, the individual exhaust path means a portion in which a flow path for exhausting the atmosphere of the substrate processing unit is formed. For example, in the case of a cup module that performs liquid processing, the flow path in the cup body is connected to the flow path. Individual exhaust pipes for the cup.

5A~5D‧‧‧第1壓力測量部 5A~5D‧‧‧1st pressure measurement department

6‧‧‧第2壓力測量部 6‧‧‧2nd Pressure Measurement Department

9‧‧‧控制部 9‧‧‧Control Department

10A~10D‧‧‧抗蝕塗佈單元 10A~10D‧‧‧resist coating unit

11‧‧‧旋轉夾具 11‧‧‧Rotary fixture

20‧‧‧杯體 20‧‧‧ cup body

28‧‧‧排氣管 28‧‧‧Exhaust pipe

50A~50D‧‧‧個別排氣管 50A~50D‧‧‧ individual exhaust pipes

52A~52D‧‧‧排氣調節風門 52A~52D‧‧‧Exhaust air damper

60‧‧‧共通排氣管 60‧‧‧Common exhaust pipe

W‧‧‧晶圓 W‧‧‧ wafer

圖1為表示抗蝕塗佈裝置之構成圖。 Fig. 1 is a view showing the configuration of a resist coating apparatus.

圖2為表示抗蝕塗佈單元的縱剖面圖。 Fig. 2 is a longitudinal sectional view showing a resist coating unit.

圖3為表示被設置在與本發明之實施型態有關之抗蝕塗佈裝置的控制部的構成圖。 Fig. 3 is a configuration diagram showing a control unit provided in a resist coating apparatus according to an embodiment of the present invention.

圖4為表示被記憶於記憶體之異常模式之檢測圖案的說明圖。 4 is an explanatory view showing a detection pattern of an abnormal mode stored in a memory.

圖5為表示處理液之吐出、排氣調節風門之狀態、在第1壓力測量部及第2壓力測量部中之壓力測量值之時序圖的說明圖。 FIG. 5 is an explanatory diagram showing a timing chart of the pressure measurement values in the first pressure measuring unit and the second pressure measuring unit, showing the state of the discharge of the processing liquid and the state of the exhaust gas adjusting damper.

圖6為表示本發明之實施型態所涉及之排氣裝置之作用的說明圖。 Fig. 6 is an explanatory view showing the action of the exhaust device according to the embodiment of the present invention.

圖7為表示本發明之實施型態所涉及之排氣裝置之作 用的說明圖。 Figure 7 is a view showing an exhaust device according to an embodiment of the present invention; Instructions for use.

圖8為表示處理液之吐出、排氣調節風門之狀態、在第1壓力測量部及第2壓力測量部中之壓力測量值之時序圖的說明圖。 8 is an explanatory diagram showing a timing chart of the pressure measurement values in the first pressure measuring unit and the second pressure measuring unit, showing the state of the discharge of the processing liquid, the state of the exhaust gas adjusting damper, and the second pressure measuring unit.

圖9為表示本發明之實施型態所涉及之排氣裝置之作用的說明圖。 Fig. 9 is an explanatory view showing the action of the exhaust device according to the embodiment of the present invention.

圖10為表示處理液之吐出、排氣調節風門之狀態、在第1壓力測量部及第2壓力測量部中之壓力測量值之時序圖的說明圖。 FIG. 10 is an explanatory diagram showing a timing chart of the pressure measurement values in the first pressure measuring unit and the second pressure measuring unit, showing the state of the discharge of the processing liquid, the state of the exhaust gas adjusting damper, and the second pressure measuring unit.

圖11為表示在第1及第2壓力測量部中之壓力測量值所致之壓力變動要因之區別的說明圖。 FIG. 11 is an explanatory view showing a difference in the factors of pressure fluctuation caused by the pressure measurement values in the first and second pressure measuring units.

針對將與本發明之實施型態有關之基板處理裝置適用於具備抗蝕塗佈單元10A~10D之抗蝕塗佈裝置之實施型態進行說明，該抗蝕塗佈單元10A~10D係藉由旋轉塗佈將作為塗佈液之抗蝕液對晶圓W進行塗佈的基板處理部。與本實施型態有關之抗蝕塗佈裝置如圖1所示般，在複數之抗蝕塗佈單元10A~10D之各個連接共通的排氣部1而被構成，在此，為了方便設為具備四台之抗蝕塗佈單元10A~10D者。各抗蝕塗佈單元10A~10D被構成各個相同，在此，舉抗蝕塗佈單元10A為例進行說明。 A description will be given of an embodiment in which a substrate processing apparatus according to an embodiment of the present invention is applied to a resist coating apparatus including resist coating units 10A to 10D, and the resist coating units 10A to 10D are used. A substrate processing unit that applies a resist liquid as a coating liquid to the wafer W by spin coating. As shown in FIG. 1, the resist coating apparatus according to the present embodiment is configured by connecting the common exhaust unit 1 to each of the plurality of resist coating units 10A to 10D, and is hereby provided for convenience. There are four anti-corrosion coating units 10A to 10D. Each of the resist coating units 10A to 10D is configured identically. Here, the resist coating unit 10A will be described as an example.

如圖2所示般，抗蝕塗佈單元10A具備藉由真空吸附晶圓W之背面中央部，水平地保持該晶圓W之 作為基板保持部的旋轉夾具11。該旋轉夾具11由下方經軸部12被連接於旋轉機構13，藉由該旋轉機構13可以在垂直軸周圍旋轉。 As shown in FIG. 2, the resist coating unit 10A is provided with a vacuum holding the central portion of the back surface of the wafer W to horizontally hold the wafer W. The rotating jig 11 as a substrate holding portion. The rotating jig 11 is connected to the rotating mechanism 13 via the lower shaft portion 12, and the rotating mechanism 13 is rotatable around the vertical axis.

在旋轉夾具11之下方側以隔著間隙包圍軸部12之方式設置圓形板14。再者，在圓形板14之圓周方向形成3處的貫通孔17，在各貫通孔17分別設置有升降銷15。在該些升降銷15之下方，設置共通之升降板18，升降銷15被構成藉由被設置在升降板18之下方的升降機構16升降自如。 The circular plate 14 is provided on the lower side of the rotating jig 11 so as to surround the shaft portion 12 with a gap therebetween. Further, three through holes 17 are formed in the circumferential direction of the circular plate 14, and lift pins 15 are provided in the respective through holes 17. Below the lift pins 15, a common lift plate 18 is provided, and the lift pins 15 are configured to be lifted and lowered by a lift mechanism 16 provided below the lift plate 18.

再者，以包圍旋轉夾具11之方式設置有杯體20。旋轉夾具11、軸部12及旋轉機構13和杯體20構成杯體模組。杯體20係接取從旋轉之晶圓W飛散，或溢出掉落的排液，將該排液排出至抗蝕塗佈裝置外。杯體20具備在上述圓形板14之周圍設置有剖面形狀為山型之環狀的山型導引部21，以從山型導引部21之外周端延伸至下方之方式，設置有環狀之垂直壁23。山型導引部21係將從晶圓W溢出掉落之液體導引至晶圓W之外側下方。 Further, the cup 20 is provided to surround the rotating jig 11. The rotating jig 11, the shaft portion 12, the rotating mechanism 13, and the cup 20 constitute a cup body module. The cup body 20 picks up the liquid discharged from the rotating wafer W or overflows, and discharges the liquid to the outside of the resist coating apparatus. The cup body 20 is provided with a mountain-shaped guide portion 21 having a mountain-shaped annular shape around the circular plate 14, and is provided with a ring so as to extend from the outer peripheral end to the lower end of the mountain-shaped guide portion 21. Vertical wall 23. The mountain type guiding portion 21 guides the liquid that has overflowed from the wafer W to the lower side of the wafer W.

再者，設置有以包圍山型導引部21之外側之方式，呈垂直的筒狀部22，和從該筒狀部22之上緣朝向內側上方傾斜延伸的上側導引部24。在上側導引部24於圓周方向設置有複數的開口部25。再者，以從上側導引部24之基端側周緣向上方延伸之方式設置有筒狀部31，且以從該筒狀部31之上緣朝向內側上方伸出之方式設置有傾斜壁32。再者，筒狀部22之下方側在山型導引部21 及垂直壁23之下方形成有剖面成為凹部型之環狀之液承接部26。在該液承接部26中，於外周側連接有排液路徑27。再者，在較液承接部26中之排液路徑27內周側，於從旋轉夾具11觀看成為互相對稱之位置，以從下方突入之形式設置有兩根排氣管28。 Further, a cylindrical portion 22 that is perpendicular to the outer side of the mountain-shaped guide portion 21 and an upper guide portion 24 that extends obliquely from the upper edge of the tubular portion 22 toward the inner side are provided. The upper guide portion 24 is provided with a plurality of openings 25 in the circumferential direction. Further, the tubular portion 31 is provided to extend upward from the peripheral edge of the proximal end side of the upper guide portion 24, and the inclined wall 32 is provided so as to protrude upward from the upper edge of the tubular portion 31 toward the inner side. . Further, the lower side of the tubular portion 22 is at the mountain type guide portion 21 Below the vertical wall 23, a liquid receiving portion 26 having a concave-shaped cross section is formed. In the liquid receiving portion 26, a liquid discharge path 27 is connected to the outer peripheral side. Further, on the inner peripheral side of the liquid discharge path 27 in the liquid receiving portion 26, two exhaust pipes 28 are provided so as to protrude from the lower side so as to be symmetrical with each other as viewed from the rotary jig 11.

再者，如圖2所示般，抗蝕塗佈單元10A具備有用以對晶圓W供給抗蝕液之抗蝕液噴嘴41。抗蝕液噴嘴41係經抗蝕液供給管42而被連接於抗蝕液供給源43。 Further, as shown in FIG. 2, the resist coating unit 10A includes a resist liquid nozzle 41 for supplying a resist liquid to the wafer W. The resist liquid nozzle 41 is connected to the resist supply source 43 via the resist supply tube 42.

再者，抗蝕塗佈單元10A具備有用以對晶圓W供給用以稀釋抗蝕液的稀釋液之稀釋液噴嘴44。稀釋液噴嘴44經稀釋液供給管45而連接於稀釋液供給源46。再者，抗蝕塗佈單元10A具備有吐出用以除去被形成在晶圓W之周緣的抗蝕膜之溶劑的溶劑噴嘴47。溶劑噴嘴47經由溶劑供給管48而連接於溶劑供給源49。而且，抗蝕塗佈單元10A具備有朝向被保持於旋轉夾具11之晶圓W之背面供給例如純水等之沖洗液的背面側沖洗噴嘴40。背面側沖洗噴嘴40被構成連接於無圖示之沖洗液供給部，朝向晶圓W之背面供給沖洗液。 Further, the resist coating unit 10A is provided with a diluent nozzle 44 for supplying a dilution liquid for diluting the resist liquid to the wafer W. The diluent nozzle 44 is connected to the diluent supply source 46 via the diluent supply pipe 45. Further, the resist coating unit 10A includes a solvent nozzle 47 that discharges a solvent for removing a resist film formed on the periphery of the wafer W. The solvent nozzle 47 is connected to the solvent supply source 49 via the solvent supply pipe 48. Further, the resist coating unit 10A includes a back side flushing nozzle 40 that supplies a flushing liquid such as pure water to the back surface of the wafer W held by the rotating jig 11. The back side flushing nozzle 40 is connected to a flushing liquid supply unit (not shown), and supplies the flushing liquid toward the back surface of the wafer W.

接著，針對被連接於先前所述之抗蝕塗佈單元10A~10D之排氣部1進行說明。如圖1所示般，排氣部1具備有例如分別個別地被連接於抗蝕塗佈單元10A~10D的個別排氣管50A~50D，和從個別排氣管50A~50D被排氣之排氣合流的共通排氣管60。 Next, the exhaust unit 1 connected to the resist coating units 10A to 10D described previously will be described. As shown in FIG. 1, the exhaust unit 1 includes, for example, individual exhaust pipes 50A to 50D that are individually connected to the resist coating units 10A to 10D, and are exhausted from the individual exhaust pipes 50A to 50D. A common exhaust pipe 60 in which the exhaust gas merges.

個別排氣管50A~50D分別構成相同，在此舉出被連接於抗蝕塗佈單元10A之個別排氣管50A為例進行說明。另外，在圖1中之各個別排氣管50A~50D中，針對與在個別排氣管50A之各部對應之部分，使用在個別排氣管50A之說明中所使用之數字相同之數字，並且分別賦予B、C、D以取代A來標示。 Each of the individual exhaust pipes 50A to 50D has the same configuration, and an individual exhaust pipe 50A connected to the resist coating unit 10A will be described as an example. In addition, in the respective exhaust pipes 50A to 50D in FIG. 1, the numbers corresponding to the numbers used in the description of the individual exhaust pipes 50A are the same as those used in the respective portions of the individual exhaust pipes 50A, and B, C, and D are respectively assigned to replace A.

個別排氣管50A成為在水平方向延伸，一端側分歧成兩根之分歧路51A。各分岐路51A分別彎曲成圓弧狀，在各分歧路51A之端部，從上方側，分別連接有在抗蝕塗佈單元10A中之兩根排氣管28內之對應的排氣管28。 Each of the individual exhaust pipes 50A is a branching path 51A that extends in the horizontal direction and has two end sides divided into two. Each of the branching passages 51A is bent in an arc shape, and corresponding exhaust pipes 28 in the two exhaust pipes 28 of the resist coating unit 10A are connected to the end portions of the respective branching passages 51A from the upper side. .

當將抗蝕塗佈單元10A側設為上流時，在較個別排氣管50A中之分歧路51A之分歧位置下游側，設置有用以測量在個別排氣管50A內流動之排氣之壓力的第1壓力測量部5A。再者，在個別排氣管50A中之第1壓力測量部5A之下游，設置有成為排氣量調整部之排氣調節風門52A。另外，在杯體20中的從晶圓W之周圍流至排氣管28之流路、排氣管28及個別排氣管50A相當於個別排氣路徑。 When the side of the resist coating unit 10A is set to be upflow, on the downstream side of the diverging position of the branch path 51A in the individual exhaust pipe 50A, it is provided to measure the pressure of the exhaust gas flowing in the individual exhaust pipe 50A. The first pressure measuring unit 5A. Further, an exhaust damper 52A serving as an exhaust gas amount adjusting portion is provided downstream of the first pressure measuring portion 5A of the individual exhaust pipes 50A. Further, the flow path from the periphery of the wafer W to the exhaust pipe 28 in the cup body 20, the exhaust pipe 28, and the individual exhaust pipe 50A correspond to individual exhaust paths.

排氣調節風門52A具備引入個別排氣管50A之外部的氛圍的開口部53，例如藉由調整相對於被設置在開口部53之蓋部54之開口部53的角度，調整開口部53之開合度，且調整流入個別排氣管50A之外部氛圍之流量。而且，從開口部53引入外部氛圍之壓力損失較經分歧路51A從杯體20內引入排氣之時的壓力損失小。因 此，藉由增大開口部53之開口度，從開口度53被引入之外部氛圍之流量增加，且從杯體20內被拉入之排氣的流量減少。再者，因藉由增大開口部53之開口度，在個別排氣管50A的全體性之壓力損失減少，故在個別排氣管50A內之排氣之壓力下降。 The exhaust damper 52A includes an opening 53 that introduces an atmosphere outside the individual exhaust pipe 50A, and adjusts the opening of the opening 53 by, for example, adjusting an angle with respect to the opening 53 of the cover 54 provided in the opening 53. The degree of integration is adjusted, and the flow rate into the external atmosphere of the individual exhaust pipe 50A is adjusted. Further, the pressure loss introduced into the external atmosphere from the opening portion 53 is smaller than the pressure loss when the exhaust gas is introduced from the cup body 20 through the branch path 51A. because By increasing the opening degree of the opening portion 53, the flow rate of the external atmosphere introduced from the opening degree 53 is increased, and the flow rate of the exhaust gas drawn from the inside of the cup body 20 is reduced. Further, by increasing the opening degree of the opening portion 53, the pressure loss of the entire exhaust pipe 50A is reduced, so that the pressure of the exhaust gas in the individual exhaust pipe 50A is lowered.

而且，為了對每個排氣調節風門52A~52D，調整開口部53之開合度，設置有擷取所對應之第1壓力測量部(5A~5D)之測量值而對各排氣調節風門52A~52D之致動器輸出控制訊號的控制器(無圖示)。藉由該控制器，在第1壓力測量部5A之壓力測量值，較例如抗蝕處理製程中之壓力設定值高之情況，或是較壓力設定值低之情況，調整排氣調節風門52A之開合度而調整成排氣壓力成為一定。具體而言，為了使在第1壓力測量部5A中之壓力測量值高於壓力設定值，提高排氣調節門52A之開口部53之開合度。依此，從杯體20A流入個別排氣管50A，排氣減少，在個別排氣管50A流動之排氣之壓力損失變少，壓力下降。再者，在第1壓力測量部5A中之壓力測量值低於壓力設定值之情況，降低排氣調節風門52A之開口部53之開合度。依此，從杯體20A流入個別排氣管50A，排氣增加，在個別排氣管50A流動之排氣之壓力損失變大，壓力上升。如此一來，調整成從抗蝕塗佈單元10A之杯體20側引入的排氣之壓力成為一定，控制成從抗蝕塗佈單元10A側引入之排氣之流量成為一定。 Further, in order to adjust the opening degree of the opening portion 53 for each of the exhaust dampers 52A to 52D, the measured values of the first pressure measuring portions (5A to 5D) corresponding to the extraction are provided for each of the exhaust dampers 52A. The ~52D actuator outputs a controller for the control signal (not shown). The controller adjusts the exhaust damper 52A when the pressure measurement value of the first pressure measuring unit 5A is higher than, for example, the pressure setting value in the resist processing process or when the pressure setting value is lower than the pressure setting value. The degree of opening and closing is adjusted so that the exhaust pressure becomes constant. Specifically, in order to make the pressure measurement value in the first pressure measuring unit 5A higher than the pressure set value, the opening degree of the opening portion 53 of the exhaust gas adjusting door 52A is increased. As a result, the individual exhaust pipe 50A flows into the individual exhaust pipe 50A from the cup body 20A, and the exhaust gas is reduced, and the pressure loss of the exhaust gas flowing through the individual exhaust pipe 50A is reduced, and the pressure is lowered. Further, when the pressure measurement value in the first pressure measuring unit 5A is lower than the pressure setting value, the opening degree of the opening portion 53 of the exhaust damper 52A is lowered. As a result, the individual exhaust pipe 50A flows into the individual exhaust pipe 50A from the cup body 20A, and the exhaust gas increases, and the pressure loss of the exhaust gas flowing through the individual exhaust pipe 50A increases, and the pressure rises. In this manner, the pressure of the exhaust gas introduced from the cup body 20 side of the resist coating unit 10A is adjusted to be constant, and the flow rate of the exhaust gas introduced from the side of the resist coating unit 10A is controlled to be constant.

作為排氣模式，在該例中，設定對基板進行 特定之處理之時的強排氣模式，和藉由較該強排氣模式時之排氣量少的排氣量進行排氣之弱排氣模式。強排氣模式係在晶圓W上之塗佈液藉由晶圓W之旋轉飛散於周圍而產生霧氣之時間帶被設定，弱排氣模式係在除此以外之時間帶(也包含在旋轉夾具上未載置晶圓W之時間帶)被設定。排氣模式之切換係從後述之控制部9藉由與各模式對應之壓力設定值被輸出至已述之控制器而被進行。即是，當與強排氣模式對應之壓力設定值被設定之時，以排氣調節風門52A~52D之開合度變大之方式，設定調節風門位置，當與弱排氣模式對應之壓力設定值被設定之時，以排氣調節風門52A~52D之開合度小於上述開合度之方式，設定調節風門位置。以下，將強排氣模式稱為「製程排氣」，將弱排氣模式稱為「空轉排氣」進行說明。 As the exhaust mode, in this example, the setting is performed on the substrate. The strong exhaust mode at the time of the specific process and the weak exhaust mode of the exhaust by the amount of exhaust gas which is smaller than the amount of exhaust gas in the strong exhaust mode. In the strong exhaust mode, the coating liquid on the wafer W is set by the time zone in which the mist is generated by the rotation of the wafer W, and the weak exhaust mode is in the other time zone (also included in the rotation). The time zone in which the wafer W is not placed on the jig is set. The switching of the exhaust mode is performed by the control unit 9 described later by the pressure setting value corresponding to each mode being output to the controller described above. That is, when the pressure setting value corresponding to the strong exhaust mode is set, the throttle position is set such that the opening degree of the exhaust throttle valves 52A to 52D becomes larger, and the pressure setting corresponding to the weak exhaust mode is set. When the value is set, the damper position is set such that the opening degree of the exhaust dampers 52A to 52D is smaller than the above-described opening degree. Hereinafter, the strong exhaust mode will be referred to as "process exhaust", and the weak exhaust mode will be referred to as "idle exhaust".

並且，在各排氣調節風門52A~52D，設置判定其開口部53之開合度為強排氣模式(製程排氣)之開合度，或為弱排氣模式(空轉排氣)之開合度的無圖示之開關感測器，對後述之控制部9發送其開合度為製程排氣時之開合度，和空轉排氣時之開合度中之哪一個的資訊訊號。 Further, in each of the exhaust dampers 52A to 52D, it is determined that the opening degree of the opening portion 53 is the opening degree of the strong exhaust mode (process exhaust) or the opening degree of the weak exhaust mode (idle exhaust). The switching sensor (not shown) transmits, to the control unit 9, which will be described later, an information signal of which of the degree of opening and closing of the process exhaust and the degree of opening and closing of the idling exhaust.

各個別排氣管50A~50D在排氣調節風門52A~52D之下流與1根之共通的共通排氣管60合流，共通排氣管60之下流連接於工場全體之排氣用設備(以下，稱為「工場動力」)。在共通排氣管60設置有測量在共通排氣管60流通之排氣之排氣壓力的第2壓力測量部 6。另外，圖1中之61係用以開關共通排氣管60之閥。 Each of the individual exhaust pipes 50A to 50D merges with the common exhaust pipe 60 common to one under the exhaust gas dampers 52A to 52D, and the common exhaust pipe 60 is connected to the exhaust gas device of the entire plant (hereinafter, Called "Workshop Power"). The common exhaust pipe 60 is provided with a second pressure measuring unit that measures the exhaust pressure of the exhaust gas flowing through the common exhaust pipe 60. 6. In addition, 61 in FIG. 1 is used to switch the valve of the common exhaust pipe 60.

再者，基板處理裝置具備控制部9。如圖3所示般，控制部9具備有CPU91、程式92及記憶體93。另外，圖中90為匯流排。再者，控制部9被連接於第1壓力測量部5A~5D、第2壓力測量部6、各排氣調節風門52A~52D。再者，在控制部9連接有警報94及顯示部95。 Furthermore, the substrate processing apparatus includes a control unit 9. As shown in FIG. 3, the control unit 9 includes a CPU 91, a program 92, and a memory 93. In addition, 90 in the figure is a bus bar. Further, the control unit 9 is connected to the first pressure measuring units 5A to 5D, the second pressure measuring unit 6, and the respective exhaust dampers 52A to 52D. Further, an alarm 94 and a display unit 95 are connected to the control unit 9.

在記憶體93記憶有在製程排氣時決定第1壓力測量部5A~5D之壓力測量值之第1容許壓力範圍的上限臨界值及下限臨界值，空轉排氣時決定第1壓力測量部5A~5D之壓力測量值之第1容許壓力範圍的上限臨界值及下限臨界值。並且，記憶決定在記憶第2壓力測量部6中之壓力測量值之第2壓力容許範圍的上限臨界值及下限臨界值。另外，上限臨界值及下限臨界值被設定成例如在製程排氣時及空轉排氣時之壓力設定值分別成為在製程排氣時及空轉排氣時之上限臨界值和下限臨界值之平均值。 The upper limit threshold value and the lower limit critical value of the first allowable pressure range in which the pressure measurement values of the first pressure measuring units 5A to 5D are determined during the process of exhausting the exhaust gas are stored in the memory 93, and the first pressure measuring unit 5A is determined during the idling exhaust. The upper limit threshold and the lower limit threshold of the first allowable pressure range of the pressure measurement value of ~5D. Further, the memory determines the upper limit threshold value and the lower limit threshold value of the second pressure allowable range of the pressure measurement value in the second pressure measuring unit 6. In addition, the upper limit threshold value and the lower limit threshold value are set to, for example, an average value of the upper limit threshold value and the lower limit limit value at the time of process exhaust and idling exhaust, respectively. .

再者，在記憶體93記憶有變更排氣調節風門52A~52D之開口部53之開合度，從空轉排氣，於切換至製程排氣之時，至個別排氣管50A~50D內之排氣壓力安定之時間△tr，及從製程排氣，切換至空轉排氣之時，至個別排氣管50A~50D內之排氣壓力安定之時間△tf。 Further, in the memory 93, the opening degree of the opening portion 53 of the exhaust dampers 52A to 52D is changed, and the venting from the idling is switched to the process exhaust to the row in the individual exhaust pipes 50A to 50D. The time Δtr of the gas pressure stability, and the time Δtf from the process exhaust gas to the idling exhaust gas to the exhaust pressure in the individual exhaust pipes 50A to 50D.

變更排氣調節風門52A~52D之開合度，切換空轉排氣和製程排氣之間之時，在空轉排氣中之壓力和在製程排氣中之壓力之間變化。因此，包含了成為偏離在空 轉排氣中之壓力的上限臨界值及下限臨界值之範圍的壓力，和在製程排氣中之壓力的上限臨界值及下限臨界值之範圍的壓力中之任何一個之壓力的時間。因此，當切換空轉排氣和製程排氣之間之時，以不需要進行警報94之發報等之方式，切換空轉排氣和製程排氣之間之後，設定停止一定時間監視之時間△tr和時間△tf。 The opening degree of the exhaust dampers 52A to 52D is changed, and when the air between the idling exhaust gas and the process exhaust gas is switched, the pressure in the idling exhaust gas and the pressure in the process exhaust gas are changed. Therefore, it is included as a deviation in the air The pressure in the range of the upper limit critical value and the lower limit critical value of the pressure in the exhaust gas, and the time of the pressure in any one of the upper limit critical value and the lower limit critical value of the pressure in the process exhaust gas. Therefore, when switching between the idle exhaust gas and the process exhaust gas, after switching between the idle exhaust gas and the process exhaust gas in such a manner that the alarm 94 is not required to be issued, the time Δtr and the time at which the monitoring is stopped for a certain period of time is set. Time Δtf.

程式92接收各排氣調節風門52A~52D係處於製程排氣時之狀態，或處於空轉排氣時之狀態的訊號，同時分別測量被設置在各個別排氣管50A~52D的第1壓力測量部5A之壓力測量值及第2壓力測量部的壓力測量值。而且，依照排氣調節風門52A~52D為製程排氣時之狀態，或空轉排氣時之狀態，選擇在製程排氣時之第1壓力測量部5A~5D之壓力測量值之上限臨界值及下限臨界值，在空轉排氣時之第1壓力測量部5A~5D之壓力測量值之上限臨界值及下限臨界值而予以讀出。而且，監視第1壓力測量部5A~5D之壓力測量值，比較該上限臨界值及該下限臨界值。因此，控制部9相當於異常檢測部。並且，在第1壓力測量部5A~5D之壓力測量值高於上限臨界值之情況，或是低於下限臨界值之情況，使警報94鳴響，在顯示部95顯示測量到偏離臨界值之值的第1壓力測量部5A~5D是哪一個第1壓力測量部5A~5D的資訊，和高於上限臨界值之訊息，或低於下限臨界值之訊息。 The program 92 receives the signals of the exhaust dampers 52A to 52D in the state of the process exhaust, or the state in the idling exhaust state, and simultaneously measures the first pressure measurement set in the respective exhaust pipes 50A to 52D. The pressure measurement value of the portion 5A and the pressure measurement value of the second pressure measurement unit. Further, according to the state in which the exhaust dampers 52A to 52D are exhausted during the process, or the state at the time of idling exhaust, the upper limit critical value of the pressure measurement values of the first pressure measuring units 5A to 5D at the time of the process exhaust is selected and The lower limit threshold value is read by the upper limit critical value and the lower limit critical value of the pressure measurement values of the first pressure measuring units 5A to 5D at the time of idling exhaust. Then, the pressure measurement values of the first pressure measuring units 5A to 5D are monitored, and the upper limit critical value and the lower limit critical value are compared. Therefore, the control unit 9 corresponds to the abnormality detecting unit. Further, when the pressure measurement value of the first pressure measuring units 5A to 5D is higher than the upper limit threshold value or lower than the lower limit threshold value, the alarm 94 is sounded, and the display unit 95 displays the measured deviation threshold value. The first pressure measuring units 5A to 5D of the values are information of the first pressure measuring units 5A to 5D, and a message higher than the upper limit threshold value or a message lower than the lower limit threshold value.

再者，即使在顯示部95顯示依照在製程排氣 時和空轉排氣之各個中，第1壓力測量部5A~5D之壓力測量值為正常排氣壓、高於上限臨界值之排氣壓，及低於下限臨界值之排氣壓中之哪一個，和第2壓力測量部6之壓力測量值為正常排氣壓，高於上限臨界值之排氣壓，及低於下限臨界值之排氣壓中之哪一個的組合而推測的異常模式(或是為正常之訊息)亦可。在此情況，例如圖4所示之表被記憶於記憶體93，根據第1壓力測量部5A~5D之壓力測量值之傾向，和第2壓力測量部6之壓力測量值之傾向的組合，所對應之異常模式之推測原因被顯示於顯示器95。 Furthermore, even if displayed on the display unit 95 in accordance with the process exhaust In each of the time and idling exhaust, the pressure measurement values of the first pressure measuring units 5A to 5D are one of a normal exhaust pressure, an exhaust pressure higher than an upper limit threshold, and an exhaust pressure lower than a lower limit threshold, and The pressure measurement value of the second pressure measuring unit 6 is an abnormal mode (or is normal) in which the normal exhaust pressure, the exhaust pressure higher than the upper limit threshold value, and the exhaust pressure lower than the lower limit threshold value are combined. Message) Yes. In this case, for example, the table shown in FIG. 4 is stored in the memory 93, and the combination of the tendency of the pressure measurement values of the first pressure measuring units 5A to 5D and the tendency of the pressure measurement values of the second pressure measuring unit 6 is The presumed cause of the corresponding abnormal mode is displayed on the display 95.

再者，比較第2壓力測量部6之壓力測量值和上限臨界值及下限臨界值，第2壓力測量部6之壓力測量值高於上限臨界值之情況，或低於下限臨界值之情況，使警報94鳴響，於顯示部95顯示在第2壓力測量部6高於上限臨界值之資訊或低於下限臨界值之資訊。 Furthermore, the pressure measurement value of the second pressure measuring unit 6 and the upper limit threshold value and the lower limit threshold value are compared, and the pressure measurement value of the second pressure measuring unit 6 is higher than the upper limit critical value or lower than the lower limit critical value. The alarm 94 is sounded, and the information indicating that the second pressure measuring unit 6 is higher than the upper limit threshold value or the information lower than the lower limit threshold value is displayed on the display unit 95.

接著，雖然針對與本發明之實施型態有關之抗蝕塗佈裝置之作用進行說明，但是首先針對在第1壓力測量部5A~5D及第2壓力測量部6之壓力測量值之監視方法，沿著在正常的排氣壓之一連串之抗蝕塗佈處理進行說明。在此，使用抗蝕塗佈單元10A，以進行抗蝕塗佈處理之例進行說明。 Next, the operation of the resist coating apparatus according to the embodiment of the present invention will be described. First, the method of monitoring the pressure measurement values of the first pressure measuring units 5A to 5D and the second pressure measuring unit 6 will be described. The resist coating process in series with one of the normal exhaust pressures will be described. Here, an example in which the resist coating unit 10A is used to perform a resist coating treatment will be described.

圖5係從上層針對在抗蝕塗佈裝置之抗蝕塗佈處理，表示各種藥液之吐出的接通斷開、排氣調節風門52A處於製程排氣時之排氣和空轉排氣時之排氣中之哪一 個的排氣狀態，或在第1壓力測量部5A之壓力測量值及第2壓力測量部6之壓力測量值之時間變化的時序圖。在圖5中之第1壓力測量部5A的壓力測量值之曲線，以實線表示的曲線表示在正常之排氣壓的第1壓力測量部5A的壓力測量值。 Fig. 5 is a view showing, from the upper layer, the anti-corrosion coating treatment of the resist coating apparatus, indicating that the discharge of the various chemical liquids is turned on and off, and the exhaust gas damper 52A is in the exhaust gas and the idling exhaust gas during the process exhaust. Which of the exhaust gases A timing chart of temporal changes in the exhaust gas state or the pressure measurement value of the first pressure measuring unit 5A and the pressure measurement value of the second pressure measuring unit 6. In the curve of the pressure measurement value of the first pressure measuring unit 5A in FIG. 5, the curve indicated by the solid line indicates the pressure measurement value of the first pressure measuring unit 5A at the normal exhaust pressure.

抗蝕塗佈裝置係在搬入晶圓W之前的時刻t0，排氣調節風門52A被開啟，成為空轉排氣時之狀態。因此，在第1壓力測量部5A，壓力測量值顯示低的值。再者，表示空轉排氣之狀態的開合度之訊號，從設置在排氣調節風門52A之開關感測器被發送至控制部9。依此，從記憶體93讀出與在空轉排氣之第1壓力測量部5A之壓力設定值之第1容許壓力範圍對應的上限臨界值P1H’及下限臨界值P1L’，監視在第1壓力測量部5A之壓力測量值是否成為上限臨界值P1H’和下限臨界值P1L’之間的排氣壓，即是正常的排氣壓力。並且，在第2壓力測量部6之壓力設定值之上限臨界值P2H及下限臨界值P2L被讀出，在第2壓力測量部6之壓力測量值是否為上限臨界值P2H和下限臨界值P2L之間的壓力，即是正常壓力之監視被開始。 At the time t0 before the wafer W is carried in the resist coating apparatus, the exhaust damper 52A is turned on, and it is in a state of idling exhaust. Therefore, in the first pressure measuring unit 5A, the pressure measurement value shows a low value. Further, a signal indicating the degree of opening and closing of the state of the idling exhaust is sent from the switch sensor provided in the exhaust damper 52A to the control unit 9. In response to this, the upper limit threshold P1H' and the lower limit threshold P1L' corresponding to the first allowable pressure range of the pressure set value of the first pressure measuring unit 5A of the idling exhaust gas are read from the memory 93, and the first pressure is monitored. Whether the pressure measurement value of the measuring unit 5A becomes the exhaust pressure between the upper limit threshold value P1H' and the lower limit threshold value P1L' is the normal exhaust pressure. In addition, the upper limit threshold value P2H and the lower limit threshold value P2L of the pressure setting value of the second pressure measuring unit 6 are read, and whether the pressure measurement value of the second pressure measuring unit 6 is the upper limit threshold value P2H and the lower limit threshold value P2L. The pressure between the two is that the monitoring of normal pressure is started.

接著，藉由例如外部之搬運裝置和升降銷15之協同作用，將晶圓W交接至抗蝕塗佈單元10A之旋轉夾盤11。之後，例如在時刻t1縮小排氣調節風門52A之開合度，使來自杯體20側之排氣量增加，切換成製程排氣。此時，因在個別排氣管50A之壓力損失上升，故在第 1壓力測量部5A之壓力測量值上升。再者，如先前所述般，在控制部9，從時刻t1至時間△tr之期間，停止第1壓力測量部5A之壓力測量值之監視。 Next, the wafer W is transferred to the spin chuck 11 of the resist coating unit 10A by, for example, the cooperation of the external transfer device and the lift pins 15. Thereafter, for example, the opening degree of the exhaust damper 52A is reduced at time t1, and the amount of exhaust gas from the cup body 20 side is increased to switch to the process exhaust. At this time, since the pressure loss in the individual exhaust pipe 50A rises, The pressure measurement value of the pressure measuring unit 5A rises. Further, as described above, the control unit 9 stops the monitoring of the pressure measurement value of the first pressure measuring unit 5A from the time t1 to the time Δtr.

並且，當排氣調節風門52A切換成製程排氣時，與製程排氣對應之第1壓力測量部5A之壓力測量值之上限臨界值P1H及下限臨界值P1L被讀出。之後，在時刻t1+△tr，在第1壓力測量部5A之排氣壓的測量被開始，壓力測量值是否在第1容許範圍內，即是上限臨界值P1H及下限臨界值P1L之範圍內被監視。 When the exhaust damper 52A is switched to the process exhaust, the upper limit threshold value P1H and the lower limit threshold value P1L of the pressure measurement values of the first pressure measuring unit 5A corresponding to the process exhaust are read. Thereafter, at time t1 + Δtr, the measurement of the exhaust pressure in the first pressure measuring unit 5A is started, and whether the pressure measurement value is within the first allowable range, that is, within the range of the upper limit threshold value P1H and the lower limit threshold value P1L is monitored. .

接著，在壓力安定之時刻t1+△tr以後之時刻t2，使旋轉夾盤11在垂直軸周圍旋轉，同時使稀釋液噴嘴44位於晶圓W之中心部之上方。之後，在進行製程排氣時之排氣之狀態，向晶圓W供給稀釋液。依此，成為晶圓W之表面濕潤之狀態。並且，在晶圓W表面擴散的稀釋液藉由離心力被甩開。 Next, at time t2 after the pressure stabilization time t1 + Δtr, the rotary chuck 11 is rotated around the vertical axis while the diluent nozzle 44 is positioned above the center portion of the wafer W. Thereafter, the diluent is supplied to the wafer W in the state of exhaust gas during the process of exhausting the process. Accordingly, the surface of the wafer W is wet. Further, the diluent diffused on the surface of the wafer W is cleaved by centrifugal force.

在此，針對從晶圓W被甩開之稀釋液之排氣進行說明。從晶圓W被甩開之稀釋液被杯體20承接，順著杯體20之內面，流入液承接部26。排氣管28因被設置成從液承接部26之下方突出，故流入液承接部26之液體之稀釋液不流入排氣管28地從排液路徑27被排液。並且，在排氣管28，在晶圓W之氛圍除了液體之稀釋液之狀態下成為流入。但是，對旋轉之晶圓W供給稀釋液，而甩開稀釋液之時，當稀釋液衝突至杯體20時，稀釋液成為霧氣。因霧氣在氛圍中漂移，故與從排氣管28被排 氣之氛圍一起被排氣。 Here, the exhaust gas of the diluent liquid which is cleaved from the wafer W will be described. The diluent that has been cleaved from the wafer W is received by the cup 20, and flows into the liquid receiving portion 26 along the inner surface of the cup 20. Since the exhaust pipe 28 is provided to protrude from below the liquid receiving portion 26, the liquid dilution liquid flowing into the liquid receiving portion 26 is discharged from the liquid discharge path 27 without flowing into the exhaust pipe 28. Further, in the exhaust pipe 28, the atmosphere of the wafer W flows in the state of the liquid diluent. However, when the diluted liquid is supplied to the rotating wafer W and the diluent is opened, when the diluted liquid collides with the cup 20, the diluted liquid becomes a mist. Since the mist drifts in the atmosphere, it is discharged from the exhaust pipe 28. The atmosphere of the gas is exhausted together.

之後，停止稀釋液之供給，使稀釋液噴嘴44從晶圓W之上方退避，接著，使抗蝕液噴嘴41位於晶圓W之中心部之上方。之後，在繼續製程排氣之排氣的狀態，並且維持晶圓W之旋轉數之狀態，開始抗蝕液之供給。依此，抗蝕液在晶圓W之表面擴散。再者，從晶圓W被甩開之抗蝕液衝突至杯體20而成為霧氣，包含霧氣的氛圍從排氣管28被排氣。 Thereafter, the supply of the diluent is stopped, the diluent nozzle 44 is evacuated from above the wafer W, and then the resist nozzle 41 is placed above the center portion of the wafer W. Thereafter, the state of the exhaust gas of the process exhaust is continued, and the state of the number of revolutions of the wafer W is maintained, and the supply of the resist liquid is started. Accordingly, the resist liquid spreads on the surface of the wafer W. Further, the resist liquid that has been cleaved from the wafer W collides with the cup body 20 to become mist, and the atmosphere containing the mist is exhausted from the exhaust pipe 28.

之後，停止抗蝕液之供給，使抗蝕液噴嘴41從晶圓W之上方退避，並且在維持晶圓W之旋轉數的原樣下，使溶劑噴嘴47位於晶圓W之周緣。接著，在時刻t3，增大在排氣調節風門52A之開口部53之開合度，切換成空轉排氣時之排氣。此時，因經由排氣調節風門52A之開口部53，外部之氛圍流入，故個別排氣管50A之壓力損失降低，第1壓力測量部5A之壓力測量值下降。 Thereafter, the supply of the resist liquid is stopped, the resist liquid nozzle 41 is retracted from above the wafer W, and the solvent nozzle 47 is placed on the periphery of the wafer W while maintaining the number of rotations of the wafer W. Next, at time t3, the opening degree of the opening portion 53 of the exhaust damper 52A is increased, and the exhaust gas at the time of idling exhaust is switched. At this time, since the external atmosphere flows through the opening portion 53 of the exhaust damper 52A, the pressure loss of the individual exhaust pipe 50A is lowered, and the pressure measurement value of the first pressure measuring portion 5A is lowered.

再者，因排氣調節風門52A之開口部53之開合度變大，從製程排氣之排氣切換至空轉排氣之排氣，故從時刻t3至時間△tf之期間，由於排氣壓移行，所以不進行排氣壓之監視。並且，排氣調節風門52A之開口部53之開合度切換，當切換至空轉排氣之排氣時，在空轉排氣時之第1壓力測量部5A之壓力測量值之上限臨界值P1H’及下限臨界值P1L’被讀出。之後，在時刻t3+△tf，藉由第1壓力測量部5A之排氣壓的測量被開始，壓力測量值是否在空轉排氣時之第1壓力測量部5A之壓力測量值之上 限臨界值P1H’及下限臨界值P1L’之範圍內被監視。 Further, since the opening degree of the opening portion 53 of the exhaust damper 52A is increased, the exhaust gas from the process exhaust gas is switched to the exhaust gas of the idling exhaust gas. Therefore, the exhaust pressure is shifted from the time t3 to the time Δtf. Therefore, the monitoring of the exhaust pressure is not performed. Further, the degree of opening and closing of the opening portion 53 of the exhaust damper 52A is switched, and when switching to the exhaust of the idling exhaust gas, the upper limit critical value P1H' of the pressure measurement value of the first pressure measuring portion 5A at the time of idling exhaust gas and The lower limit threshold P1L' is read. Thereafter, at time t3 + Δtf, the measurement of the exhaust pressure by the first pressure measuring unit 5A is started, and whether the pressure measurement value is above the pressure measurement value of the first pressure measuring unit 5A at the time of idling exhaust gas The limit threshold value P1H' and the lower limit threshold value P1L' are monitored.

接著，在排氣壓安定之時刻t3+△tf以後之時刻t4，維持晶圓W之旋轉數之原樣，從溶劑噴嘴47向晶圓W之周緣供給溶劑。再者，從背面側沖洗噴嘴40向晶圓W之背面供給例如純水等之沖洗液。藉由從溶劑噴嘴47向晶圓W之周緣供給溶劑，晶圓W之周緣部之抗蝕膜溶解被除去，從背面側沖洗噴嘴40供給沖洗液，依此晶圓W之背面被洗淨。溶劑及沖洗液從晶圓W被甩開而衝突至杯體20之時，因不成為附著性之霧氣，故從排液路徑27被排液。之後晶圓W被交接至外部之搬運裝置而被搬出。 Then, at time t4 after the time t3 + Δtf at which the exhaust pressure is stabilized, the number of rotations of the wafer W is maintained as it is, and the solvent is supplied from the solvent nozzle 47 to the periphery of the wafer W. Further, a rinse liquid such as pure water is supplied from the back side rinse nozzle 40 to the back surface of the wafer W. By supplying the solvent from the solvent nozzle 47 to the periphery of the wafer W, the resist film on the peripheral portion of the wafer W is dissolved and removed, and the rinse liquid is supplied from the back side rinse nozzle 40, whereby the back surface of the wafer W is washed. When the solvent and the rinsing liquid are cleaved from the wafer W and collide with the cup 20, they are discharged from the liquid discharge path 27 because they do not become an adhesive mist. Thereafter, the wafer W is transferred to an external transfer device and carried out.

如此一來，在第1壓力測量部5A之壓力測量值，在從時刻t0至時刻t1之期間，及時刻t3+△tf以後，是否為在空轉排氣時從上限臨界值P1H’至下限臨界值P1L’之期間的壓力被監視，且從時刻t1+△tr至t3之期間，是否為在製程排氣時從上限臨界值P1H至下限臨界值P1L之期間的排氣壓被監視。 In this way, whether the pressure measurement value of the first pressure measuring unit 5A is from the time t0 to the time t1 and after the time t3 + Δtf, is the upper limit threshold P1H' to the lower limit value at the time of idling exhaust The pressure during the period of P1L' is monitored, and during the period from time t1 + Δtr to t3, whether or not the exhaust pressure is monitored during the period from the upper limit threshold value P1H to the lower limit threshold value P1L during the process exhaust.

再者，第2壓力測量部6之壓力測量值不論空轉排氣時及製程排氣時，在塗佈處理之期間，同樣是否為從上限臨界值P2H至下限臨界值P2L之期間的排氣壓被監視。 In addition, the pressure measurement value of the second pressure measuring unit 6 is the same as the exhaust pressure from the upper limit threshold value P2H to the lower limit threshold value P2L during the coating process regardless of the idling exhaust process and the process exhaust time. Monitoring.

接著，在上述抗蝕塗佈處理，針對第1壓力測量部5A之測量值變化之例進行說明。例如，在實施型態所示之抗蝕塗佈裝置，有例如抗蝕液之霧氣附著使得個別排氣管50A堵塞之情形。 Next, an example of the change in the measured value of the first pressure measuring unit 5A will be described in the above-described resist coating treatment. For example, in the resist coating apparatus shown in the embodiment, there is a case where, for example, the mist of the resist liquid adheres to the individual exhaust pipe 50A.

在此，以於進行抗蝕液之供給之後，例如在個別排氣管50A之一方之分歧路51A之入口部分產生堵塞之例進行說明。在圖5中之第1壓力測量部5A之壓力測量值之曲線中的鏈線之曲線，表示在產生個別排氣管50A之堵塞之例中的第1壓力測量部5A之壓力測量值之變化圖案。 Here, an example in which the clogging occurs at the entrance portion of the branch path 51A of one of the individual exhaust pipes 50A after the supply of the resist liquid is performed. The curve of the chain line in the curve of the pressure measurement value of the first pressure measuring portion 5A in Fig. 5 indicates the change in the pressure measurement value of the first pressure measuring portion 5A in the example in which the clogging of the individual exhaust pipe 50A occurs. pattern.

因當進行抗蝕液之塗佈之後，在個別排氣管50A之一方之分歧路51A產生堵塞時，如圖6所示般，在個別排氣管50A之壓力損失上升，故個別排氣管50A內之排氣壓上升。因此，如圖5所示般，例如於時刻ta，在第1壓力測量部5A，所測量到之壓力測量值高於在製程時之上限臨界值P1H。依此，在控制部9，藉由壓力測量值高於上限臨界值P1H，警報94被發報，並且在顯示部95表示在該第1壓力測量部5A高於上限臨界值P1H之資訊。 When the clogging occurs in the branch path 51A of one of the individual exhaust pipes 50A after the application of the resist liquid, as shown in FIG. 6, the pressure loss in the individual exhaust pipe 50A rises, so the individual exhaust pipes The exhaust pressure in 50A rises. Therefore, as shown in FIG. 5, for example, at time ta, in the first pressure measuring unit 5A, the measured pressure measurement value is higher than the upper limit critical value P1H at the time of the process. Accordingly, in the control unit 9, the alarm 94 is reported by the pressure measurement value being higher than the upper limit threshold value P1H, and the information indicating that the first pressure measuring unit 5A is higher than the upper limit threshold value P1H is displayed on the display unit 95.

另外，在共通排氣管60，當在一個的個別排氣管50A產生堵塞使得壓力損失上升時，藉由增加在其他正常進行排氣之個別排氣管50B~50D的排氣流量，壓力損失之上升部分的排氣流量被補償。因此，在共通排氣管60，以全體而言，壓力損失不上升，在第2壓力測量部6之壓力測量值也落在第2容許壓力範圍內(P2L~P2H)。 Further, in the common exhaust pipe 60, when the clogging of one of the individual exhaust pipes 50A causes the pressure loss to rise, the pressure loss is increased by increasing the exhaust flow rate of the individual exhaust pipes 50B to 50D which are normally exhausted. The exhaust flow rate of the rising portion is compensated. Therefore, the pressure loss does not increase in the entire exhaust pipe 60, and the pressure measurement value in the second pressure measuring unit 6 also falls within the second allowable pressure range (P2L to P2H).

再者，在其他正常地進行排氣之個別排氣管50B~50D，雖然排氣流量變多，但是因藉由複數之個別 排氣管50B~50D，補償一個的個別排氣管50A之壓力損失，故在其他之個別排氣管50B~50D之各個，在排氣流量或排氣壓，不會有大的變化。 In addition, in the other exhaust pipes 50B to 50D that are normally exhausted, although the exhaust flow rate is increased, it is caused by a plurality of individual exhaust pipes. Since the exhaust pipes 50B to 50D compensate for the pressure loss of one of the individual exhaust pipes 50A, there is no significant change in the exhaust flow rate or the exhaust pressure in each of the other individual exhaust pipes 50B to 50D.

因此，在顯示部95，表示第2壓力測量部6之壓力測量值為正常之資訊。再者，因第1壓力測量部5A之測量結果為「上限臨界值P1H以上」、第2壓力測量部6之測量結果為「正常」，故控制部9從圖4所示之表判斷成「個別排氣路徑之堵塞」，顯示該要因。並且，被設置在其他之個別排氣管50B~50D之第1壓力測量部5A之測量值為正常之資訊被顯示。 Therefore, the display unit 95 indicates that the pressure measurement value of the second pressure measuring unit 6 is normal. In addition, since the measurement result of the first pressure measuring unit 5A is "upper limit threshold value P1H or more" and the measurement result of the second pressure measuring unit 6 is "normal", the control unit 9 determines from the table shown in FIG. The blockage of individual exhaust paths" shows the cause. Further, information indicating that the measured value of the first pressure measuring unit 5A provided in the other individual exhaust pipes 50B to 50D is normal is displayed.

當之後繼續進行處理時，在時刻t3以後，因第1壓力測量部5A之測量結果為「上限臨界值P1H’以上」，第2壓力測量部6之測量結果為「正常」，故控制部9維持著判斷成「個別排氣管50A」之堵塞。如此一來，在個別排氣管50A之壓力損失上升之情況，不管製程排氣時之排氣及空轉排氣時之排氣，表示在第1壓力測量部5A之壓力測量值為「上限臨界值以上」，表示在第2壓力測量部6之壓力測量值為正常。再者，表示其他之第1壓力測量部5B~5C之壓力測量值為正常。 When the processing is continued, the measurement result of the first pressure measuring unit 5A is "the upper limit threshold value P1H' or more" after the time t3, and the measurement result of the second pressure measuring unit 6 is "normal", so the control unit 9 The clogging of the "individual exhaust pipe 50A" is maintained. In this case, when the pressure loss of the individual exhaust pipe 50A rises, the exhaust gas at the time of exhausting the exhaust gas and the exhaust gas during the idling exhaust gas indicate that the pressure measurement value in the first pressure measuring portion 5A is "the upper limit critical value". The value above the value indicates that the pressure measurement value in the second pressure measuring unit 6 is normal. In addition, the pressure measurement values of the other first pressure measuring units 5B to 5C are normal.

再者，例如在個別排氣管50A~50D之漏泄的產生，或在排氣調節風門52A~52D產生堵塞，從開口部53產生排氣洩漏(漏泄)之情況，例如圖7示意性表示般，在該個別排氣管50A之壓力損失減少，排氣壓下降。因此，在圖8，例如於時刻ta，當引起如此之事態時，如 鏈線所示般，第1壓力測量部5A之壓力測量值在製程排氣時，較下限臨界值P1L下降，在空轉排氣時，較下限臨界值P1L’下降。另外，實線表示正常時之壓力測量值。 Further, for example, leakage of the individual exhaust pipes 50A to 50D occurs, or clogging occurs in the exhaust dampers 52A to 52D, and exhaust leakage (leakage) occurs from the opening 53. For example, FIG. 7 schematically shows The pressure loss in the individual exhaust pipe 50A is reduced, and the exhaust pressure is lowered. Therefore, in Fig. 8, for example, at time ta, when causing such a state, such as As shown by the chain line, the pressure measurement value of the first pressure measuring unit 5A is lower than the lower limit threshold value P1L during the process exhaust, and lower than the lower limit threshold value P1L' during the idling exhaust. In addition, the solid line indicates the pressure measurement at normal time.

即使在一個個別排氣管50A之壓力損失減少之情況下，藉由其他正常地進行排氣之個別排氣管50B~50D補償排氣流量。因此，針對在共通排氣管60之排氣壓力及排氣流量，無變化，第2壓力測量部6之測量值落在上限臨界值P2H和下限臨界值P2L之間。再者，設置在其他正常之個別排氣管50B~50D之第1壓力測量部5B~5D之壓力測量值也落在容許壓力範圍。因此，在此情況下，因第1壓力測量部5A之測量結果為「低於容許壓力範圍」，第2壓力測量部6之測量結果為「正常」，故判斷成漏泄產生，例如各壓力測量結果成為「漏泄產生」及產生漏泄之個別排氣路徑(杯體模組)的顯示，同時警報94被發報。 Even in the case where the pressure loss of one individual exhaust pipe 50A is reduced, the exhaust flow rate is compensated by the other individual exhaust pipes 50B to 50D that normally perform the exhaust. Therefore, there is no change in the exhaust pressure and the exhaust gas flow rate in the common exhaust pipe 60, and the measured value of the second pressure measuring unit 6 falls between the upper limit critical value P2H and the lower limit critical value P2L. Further, the pressure measurement values of the first pressure measuring units 5B to 5D provided in the other normal individual exhaust pipes 50B to 50D also fall within the allowable pressure range. Therefore, in this case, since the measurement result of the first pressure measuring unit 5A is "below the allowable pressure range" and the measurement result of the second pressure measuring unit 6 is "normal", it is determined that a leak occurs, for example, each pressure measurement. As a result, the display of the "leakage generation" and the individual exhaust path (cup body module) that caused leakage occurred, and the alarm 94 was reported.

接著，針對工場動力變動之情況予以敘述。即使在製程排氣時，空轉排氣時，工場動力之排氣壓變動之情況，如圖9所示般，例如在工場動力之排氣壓上升之情況，在共通排氣管60之排氣壓上升。而且，在工場動力之排氣壓之上升之程度大之情況(大於容許範圍之情況)，第2壓力測量部6之測量結果成為「超越上限臨界值P2H」。另外，藉由在共通排氣管60之排氣壓力上升，於製程排氣時，在各個別排氣管50A~50D之排氣壓分別上升，超越上限臨界值P1H。另外，於空轉排氣時， 在各個別排氣管50A~50D，因從開放的排氣調節風門52A~52D流入之氣體之流量的變化量大，故壓力之變化量變小，例如落在容許壓力範圍。 Next, the situation of the change of the power of the workshop will be described. Even in the case of the process exhaust, when the exhaust gas is idling, the exhaust pressure of the plant power fluctuates. As shown in FIG. 9, for example, when the exhaust pressure of the plant power increases, the exhaust pressure of the common exhaust pipe 60 rises. In addition, when the degree of increase in the exhaust pressure of the power of the factory is large (more than the allowable range), the measurement result of the second pressure measuring unit 6 becomes "the upper limit threshold value P2H". Further, when the exhaust pressure of the common exhaust pipe 60 rises, the exhaust pressure of each of the exhaust pipes 50A to 50D rises during the process exhaust, and exceeds the upper limit critical value P1H. In addition, when idling, In each of the exhaust pipes 50A to 50D, since the amount of change in the flow rate of the gas flowing in from the open exhaust dampers 52A to 52D is large, the amount of change in the pressure is small, for example, falling within the allowable pressure range.

圖10表示在時刻ta工場動力增加很多之情況，藉由鏈線表示壓力測量值。在工場動力增加很多之情況，第2壓力測量部6之測量結果可以僅以「超過上限臨界值P2H」這樣的資訊進行判斷，例如進行各壓力測量結果及「工場動力增加」之顯示，同時警報被發報。 Fig. 10 shows a case where the power of the workplace increases a lot at the time ta, and the pressure measurement value is represented by a chain line. In the case where the power of the factory is increased a lot, the measurement result of the second pressure measuring unit 6 can be judged only by the information of "exceeding the upper limit threshold value P2H", for example, the display of each pressure measurement result and the "increased power of the factory" is displayed, and the alarm is simultaneously issued. Was reported.

再者，於工場動力之排氣壓減少很多之情況，因第2壓力測量部6之測量值低於下限臨界值P2L，故可以僅以該資訊，檢測出該現象，進行例如各壓力測量結果及「工場動力減少」之顯示，同時警報被發報。 Further, since the exhaust pressure of the power of the factory is greatly reduced, since the measured value of the second pressure measuring unit 6 is lower than the lower limit threshold value P2L, the phenomenon can be detected only by the information, and for example, the respective pressure measurement results and The display of "Workshop Power Reduction" and the alarm were reported.

圖11橫軸表示第1壓力測量部5A~5D之壓力測量值，縱軸表示第2壓力測量部6之壓力測量值。圖11中之A表示製程排氣時之第1壓力測量值之第1容許壓力範圍及第2壓力測量值之第2容許壓力範圍，圖11中之B表示空轉排氣時之第1壓力測量值之第1容許壓力範圍及第2壓力測量值之第2容許壓力範圍。 The horizontal axis of Fig. 11 indicates the pressure measurement values of the first pressure measuring units 5A to 5D, and the vertical axis indicates the pressure measurement values of the second pressure measuring unit 6. In Fig. 11, A indicates the first allowable pressure range of the first pressure measurement value and the second allowable pressure range of the second pressure measurement value, and B in Fig. 11 indicates the first pressure measurement at the time of idling exhaust. The first allowable pressure range of the value and the second allowable pressure range of the second pressure measurement value.

當以如此之特性圖表示時，在個別排氣管50A~50D產生堵塞之情況，雖然產生堵塞之個別排氣管50A~50D之第1壓力測量部5A~5D之測量值上升，但是在第2壓力測量部之壓力測量值幾乎不上升。因此，在製程排氣時，第1壓力測量部5A~5D之壓力測量值及第2壓力部6之壓力測量值位於圖6中之(1)之區域內。 再者，在空轉排氣時，第1壓力測量部5A~5D之測量值及第2壓力測量部6之測量值位於圖6中之(5)之區域內。再者，在個別排氣管50A~50D之漏泄的產生，或是排氣調節風門52A~52D產生堵塞，從開口部53產生排氣洩漏之情況，在製程排氣，第1壓力測量部5A~5D之測量值及第2壓力測量部6之測量值位於圖11中之(4)之區域內。再者，在空轉排氣時，第1壓力測量部5A~5D之測量值及第2壓力測量部6之測量值位於圖11中之(8)之區域內。 In the case of such a characteristic diagram, when the individual exhaust pipes 50A to 50D are clogged, the measured values of the first pressure measuring units 5A to 5D of the individual exhaust pipes 50A to 50D that are blocked are increased, but in the first 2 The pressure measurement value of the pressure measuring section hardly rises. Therefore, during the process of exhausting the gas, the pressure measurement values of the first pressure measuring units 5A to 5D and the pressure measurement values of the second pressure portion 6 are located in the region of (1) in Fig. 6 . In the idling exhaust, the measured values of the first pressure measuring units 5A to 5D and the measured values of the second pressure measuring unit 6 are located in the region of (5) in Fig. 6 . In addition, the leakage of the individual exhaust pipes 50A to 50D or the clogging of the exhaust dampers 52A to 52D causes the exhaust gas to leak from the opening 53 and the exhaust gas in the process, the first pressure measuring unit 5A The measured value of ~5D and the measured value of the second pressure measuring portion 6 are located in the region of (4) in Fig. 11. In the idling exhaust, the measured values of the first pressure measuring units 5A to 5D and the measured values of the second pressure measuring unit 6 are located in the region of (8) in Fig. 11 .

再者，在製程排氣時，在工場動力之排氣壓變動之情況，例如工場動力之排氣壓上升之情況，所有的第1壓力測量部5A~5D之壓力測量值，和第2壓力測量部6之壓力測量值分別上升。因此，在製程排氣時，第1壓力測量部5A~5D之測量值及第2壓力測量部6之測量值位於圖11中之(2)之區域內。再者，空轉時成為圖11中之(6)之區域所示的值。並且，在工場動力之排氣壓下降之情況，位於圖11中之(3)之區域內，於空轉排氣時，位於圖11中之(7)的區域內。 Further, in the case of the process exhaust, when the exhaust pressure of the power of the factory changes, for example, the exhaust pressure of the power of the factory increases, the pressure measurement values of all the first pressure measuring units 5A to 5D, and the second pressure measuring unit The pressure measurement values of 6 rise respectively. Therefore, in the process of exhausting the process, the measured values of the first pressure measuring units 5A to 5D and the measured values of the second pressure measuring unit 6 are located in the region of (2) in Fig. 11 . Further, when idling, the value shown in the area of (6) in Fig. 11 is obtained. Further, in the case where the exhaust pressure of the power of the factory is lowered, it is located in the region of (3) in Fig. 11 and is located in the region of (7) in Fig. 11 at the time of idling exhaust.

若藉由上述實施型態時，測量個別地被連接於抗蝕塗佈單元10A~10D之個別排氣管50A~50D之排氣壓，同時個別排氣管50A~50D之各個合流，測量藉由排氣動力設備被排氣的共通排氣管60之排氣壓，且比較各測量值和所對應之容許壓力範圍。因此，可以確實地檢測出在包含個別排氣管50A~50D之各個別排氣路徑之附 著物之堵塞等之異常。 According to the above embodiment, the exhaust pressures of the individual exhaust pipes 50A to 50D individually connected to the resist coating units 10A to 10D are measured, and the individual exhaust pipes 50A to 50D are combined, and the measurement is performed by The exhaust power is exhausted by the exhaust gas to the exhaust pressure of the common exhaust pipe 60, and the respective measured values and the corresponding allowable pressure ranges are compared. Therefore, it is possible to reliably detect the attachment of the respective exhaust paths including the individual exhaust pipes 50A to 50D. Abnormalities such as blockage of objects.

再者，因可以確實地檢測出個別排氣路徑之堵塞，故根據排氣壓調整杯體20之排氣量之時，不會有流量過度變少之情形。再者，亦可以進行在個別排氣路徑之漏泄的檢測，可以一併檢測出工場排氣之增加、減少。 Further, since the clogging of the individual exhaust passages can be reliably detected, when the exhaust amount of the cup body 20 is adjusted according to the exhaust pressure, there is no possibility that the flow rate is excessively reduced. Furthermore, it is also possible to detect the leakage of the individual exhaust paths, and it is possible to detect the increase and decrease of the exhaust of the factory.

再者，即使為在抗蝕之塗佈、顯像製程的進行基板之加熱處理的加熱裝置亦可。 Further, it may be a heating device that performs heat treatment of the substrate in the application of the resist and the development process.

在此情況，雖然有例如以附著物質產生昇華物，附著於排氣管之情形，但是可以確實地檢測出個別排氣管50A~50D之排氣壓的異常。 In this case, for example, when the sublimate is generated by the adhering substance and adheres to the exhaust pipe, the abnormality of the exhaust pressure of the individual exhaust pipes 50A to 50D can be reliably detected.

在上述實施型態中，雖然在顯示部95顯示「個別排氣路徑之堵塞」等之不良的要因，但是即使不進行要因之顯示，使顯示第1壓力測量部5A~5D及第2壓力測量部6之測量結果(在容許範圍內，或偏離容許範圍之上側或下側這樣的資訊)亦可。即使在此情況，操作員可以掌握不良之產生及其要因。再者，排氣調節風門52A~52D為製程排氣之開合度，或為空轉排氣之開合度之資訊，即從用以實施例如抗蝕塗佈處理之一連串的製程之處理配方判斷亦可。 In the above-described embodiment, the display unit 95 displays the cause of the defect such as "occlusion of the individual exhaust path". However, the first pressure measuring unit 5A to 5D and the second pressure measurement are displayed even if the cause is not displayed. The measurement result of the part 6 (information within the allowable range or off the upper side or the lower side of the allowable range) may also be used. Even in this case, the operator can grasp the cause of the defect and its cause. Furthermore, the exhaust regulating dampers 52A to 52D are information on the opening degree of the process exhaust gas or the opening and closing degree of the idling exhaust gas, that is, from the processing recipe for performing a series of processes such as the resist coating process. .

〔實施例〕 [Examples]

藉由本發明，為了調查是否能夠由產生個別排氣管50A~50D之堵塞之時的第1壓力測量部5A~5D之壓力測量值之變化和在第2壓力測量部6之壓力測量值之變 化，做出區別，進行以下之試驗。 According to the present invention, in order to investigate whether or not the change in the pressure measurement value of the first pressure measuring portions 5A to 5D when the individual exhaust pipes 50A to 50D are blocked and the pressure measurement value in the second pressure measuring portion 6 can be changed To make a difference, carry out the following tests.

使用實施型態所示之抗蝕塗佈裝置，密封被連接於4根抗蝕塗佈單元10A~10D之計8根的排氣管28之內的0根~8根，求出在各個之第1壓力測量部5A~5D及第2壓力測量部6的壓力測量值。 By using the resist coating apparatus shown in the embodiment, 0 to 8 of the exhaust pipes 28 connected to the eight of the four resist coating units 10A to 10D are sealed, and each of them is obtained. Pressure measurement values of the first pressure measuring units 5A to 5D and the second pressure measuring unit 6.

再者，將在抗蝕塗佈單元10A之兩根排氣管28分別設為排氣管a、b，將在抗蝕塗佈單元10B之兩根排氣管28分別設為排氣管c、d，將抗蝕塗佈單元10C之兩根排氣管28分別設為排氣管e、f，將抗蝕塗佈單元10D之兩根排氣管28分別設為排氣管g、h，求出分別密封表1所示之排氣管28而進行排氣之時的在各第1壓力測量部5A及第2壓力測量部6的壓力測量值。再者，降低個別排氣管50A之排氣調節風門52A之開合度，設定成製程排氣時之排氣流量，在其他之個別排氣管50B~50C，且在排氣調節風門52B~52D，提高開合度而設定成空轉排氣之排氣流量而進行試驗。 Further, the two exhaust pipes 28 of the resist coating unit 10A are respectively the exhaust pipes a and b, and the two exhaust pipes 28 of the resist coating unit 10B are respectively designated as the exhaust pipe c. And d, the two exhaust pipes 28 of the resist coating unit 10C are respectively set as the exhaust pipes e and f, and the two exhaust pipes 28 of the resist coating unit 10D are respectively set as the exhaust pipes g and h. The pressure measurement values of the first pressure measuring unit 5A and the second pressure measuring unit 6 when the exhaust pipe 28 shown in Table 1 is sealed and exhausted are obtained. Furthermore, the opening degree of the exhaust damper 52A of the individual exhaust pipe 50A is lowered, and the exhaust flow rate during the process exhaust is set, in the other individual exhaust pipes 50B to 50C, and the exhaust damper 52B to 52D. The test was carried out by increasing the degree of opening and closing and setting the exhaust flow rate of the idling exhaust gas.

表1表示該結果，表示分別密封表1所示之排氣管28之時的在各第1壓力測量部5A~5D及第2壓力測量部6之的壓力測量值。另外，表1中之F超過第1壓力測量部5A~5D之最大測量值，表示無法測量。再者，賦予一個＊的資料表示兩根排氣管28之中的一根被密封的在個別排氣管50A~50D的壓力測量值，賦予兩個＊的資料表示兩根排氣管28之雙方被密封的在個別排氣管50A~50D的壓力測量值。另外，針對超越在第1壓力 測量部5A~5D之最大測量值者，無賦予＊。 Table 1 shows the results, and shows the pressure measurement values of the first pressure measuring units 5A to 5D and the second pressure measuring unit 6 when the exhaust pipe 28 shown in Table 1 is sealed. Further, F in Table 1 exceeds the maximum measured value of the first pressure measuring units 5A to 5D, indicating that measurement is impossible. Further, the data given to * indicates the pressure measurement value of the one of the two exhaust pipes 28 sealed in the individual exhaust pipes 50A to 50D, and the data given to the two * indicates the two exhaust pipes 28 The pressure measurements of the individual exhaust pipes 50A~50D are sealed by both sides. In addition, aiming at surpassing the first pressure The maximum measured value of the measuring units 5A to 5D is not assigned *.

如在僅密封表1中之排氣管h之例的第1壓力測量部5D之壓力測量值，在密封排氣管f~h之例的第1壓力測量部5C之壓力測量值，及在密封排氣管d~h之例的第1壓力測量部5B之壓力測量值所示般，可知當排氣管28之中的一根被密封時，雖然被連接於該排氣管28之個別排氣管50B~50D之壓力測量值急遽上升，但是在其他的個別排氣管50A~50C之第1壓力測量部5A~5C及第2壓力測量部6之壓力測量值與密封的個別排氣管50B~50D之排氣壓幾乎不變化。 The pressure measurement value of the first pressure measuring unit 5D which is an example of the exhaust pipe h in the table 1 is sealed, and the pressure measurement value of the first pressure measuring unit 5C which seals the exhaust pipe f to h, and As shown by the pressure measurement value of the first pressure measuring unit 5B which seals the exhaust pipes d to h, it is understood that when one of the exhaust pipes 28 is sealed, it is connected to the individual of the exhaust pipe 28 The pressure measurement values of the exhaust pipes 50B to 50D rise sharply, but the pressure measurement values of the first pressure measuring portions 5A to 5C and the second pressure measuring portion 6 of the other individual exhaust pipes 50A to 50C and the sealed individual exhaust gas The exhaust pressure of the tubes 50B to 50D hardly changes.

再者，如在密封排氣管g、h之例的第1壓力測量部5D之壓力測量值、在密封排氣管e~h之例的第1壓力測量部5C之壓力測量值及在密封排氣管c~h之例的第1壓力測量部5B之壓力測量值所示般，當兩根之排氣管28之雙方被密封時，設置在連接該排氣管28之個別排氣管50A~50D的第1壓力測量部5A~5D的壓力測量值急遽上升。 In addition, the pressure measurement value of the first pressure measuring unit 5D which is an example of the sealed exhaust pipes g and h, and the pressure measurement value of the first pressure measuring unit 5C which seals the exhaust pipes e to h are sealed. In the same manner as the pressure measurement value of the first pressure measuring unit 5B in the example of the exhaust pipe c to h, when both of the exhaust pipes 28 are sealed, the individual exhaust pipes connected to the exhaust pipe 28 are provided. The pressure measurement values of the first pressure measuring units 5A to 5D of 50A to 50D rise sharply.

因此，在排氣管28堵塞之情況，雖然在被連 接於該排氣管28之個別排氣管50A~50D之第1壓力測量部5A~5D之壓力測量值上升，但是第2壓力測量部6之測量值可以說幾乎不變化。此應該係藉由無產生堵塞之個別排氣管50A~50D之排氣壓上升，在共通排氣管60之壓力損失幾乎無之故。 Therefore, in the case where the exhaust pipe 28 is clogged, although it is connected The pressure measurement values of the first pressure measuring units 5A to 5D of the individual exhaust pipes 50A to 50D connected to the exhaust pipe 28 increase, but the measured value of the second pressure measuring unit 6 can hardly change. This should be caused by the increase in the exhaust pressure of the individual exhaust pipes 50A to 50D without clogging, and the pressure loss in the common exhaust pipe 60 is almost no cause.

t0、t1、t2、t3、t4、ta、tf‧‧‧時刻 T0, t1, t2, t3, t4, ta, tf‧‧‧

P1H、P1H’、P2H‧‧‧上限臨界值 P1H, P1H', P2H‧‧‧ upper limit threshold

P1L、P1L’、P2L‧‧‧下限臨界值 P1L, P1L', P2L‧‧‧ lower threshold

Claims (12)

一種基板處理裝置，其特徵為具備：複數之基板處理部，其係進行產生包含附著成分之氛圍之基板處理；個別排氣路徑，其係個別地被設置在上述複數之基板處理部，用以將在該基板處理部中之基板的氛圍予以排氣；共通排氣路徑，其係上述個別排氣路徑之各個合流，藉由排氣動力設備被排氣；第1壓力測量部，其係被設置在上述個別排氣路徑之各個，用以測量上述個別排氣路徑之排氣壓；第2壓力測量部，其係被設置在上述共通排氣路徑，用以測量該共通排氣路徑之排氣壓；及異常檢測部，其係根據上述第1壓力測量部之測量值和第1容許壓力範圍之比較結果，和上述第2壓力測量部之測量值和第2容許壓力範圍之比較結果，檢測出在個別排氣路徑中的異常。 A substrate processing apparatus comprising: a plurality of substrate processing units that perform substrate processing for generating an atmosphere containing an adherent component; and individual exhaust paths that are individually provided in the plurality of substrate processing units for The atmosphere of the substrate in the substrate processing unit is exhausted; the common exhaust path is merged by the respective individual exhaust paths, and is exhausted by the exhaust power device; the first pressure measuring unit is Provided in each of the individual exhaust paths for measuring the exhaust pressure of the individual exhaust paths; the second pressure measuring portion is disposed in the common exhaust path for measuring the exhaust pressure of the common exhaust path And an abnormality detecting unit that detects the comparison result between the measured value of the first pressure measuring unit and the first allowable pressure range, and the comparison between the measured value of the second pressure measuring unit and the second allowable pressure range Anomalies in individual exhaust paths. 如請求項1所記載之基板處理裝置，其中上述異常檢測部被構成於上述第1壓力測量部之測量值高於第1容許壓力範圍之上限，並且上述第2壓力測量部之測量值落在第2容許壓力範圍之時，判斷在設置有該第1壓力測量部之個別排氣路徑產生堵塞。 The substrate processing apparatus according to claim 1, wherein the abnormality detecting unit is configured such that a measured value of the first pressure measuring unit is higher than an upper limit of the first allowable pressure range, and a measured value of the second pressure measuring unit falls. In the case of the second allowable pressure range, it is determined that clogging occurs in the individual exhaust paths in which the first pressure measuring unit is provided. 如請求項1或2所記載之基板處理裝置，其中上述異常檢測部被構成於上述第1壓力測量部之測量 值低於第1容許壓力範圍之下限，並且上述第2壓力測量部之測量值落在第2容許壓力範圍之時，判斷在設置有該第1壓力測量部之個別排氣路徑產生漏泄。 The substrate processing apparatus according to claim 1 or 2, wherein the abnormality detecting unit is configured to be measured by the first pressure measuring unit When the value is lower than the lower limit of the first allowable pressure range and the measured value of the second pressure measuring unit falls within the second allowable pressure range, it is determined that a leak occurs in the individual exhaust paths in which the first pressure measuring unit is provided. 如請求項1至3中之任一項所記載之基板處理裝置，其中上述異常檢測部被構成於上述第2壓力測量部之測量值高於第2容許壓力範圍之上限時，排氣動力設備之動力增加，上述第2壓力測量部之測量值低於第2容許壓力範圍之下限之時，判斷排氣動力設備之動力減少。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the abnormality detecting unit is configured to be an exhaust power device when the measured value of the second pressure measuring unit is higher than an upper limit of the second allowable pressure range. When the power is increased and the measured value of the second pressure measuring unit is lower than the lower limit of the second allowable pressure range, the power of the exhaust power unit is determined to decrease. 如請求項1至4中之任一項所記載之基板處理裝置，其中上述基板處理部具備：基板保持部，其係水平地保持基板；旋轉機構，其係使基板保持部在垂直軸周圍旋轉；及杯體，其係包圍被保持於基板保持部之基板之周圍，內部之氛圍經上述個別排氣路徑而被排氣，上述基板處理係在對基板供給塗佈液之狀態使基板旋轉的塗佈處理。 The substrate processing apparatus according to any one of claims 1 to 4, wherein the substrate processing unit includes a substrate holding portion that horizontally holds the substrate, and a rotation mechanism that rotates the substrate holding portion around the vertical axis And a cup body surrounding the substrate held by the substrate holding portion, wherein the internal atmosphere is exhausted through the individual exhaust paths, and the substrate processing is to rotate the substrate in a state in which the coating liquid is supplied to the substrate. Coating treatment. 如請求項5所記載之基板處理裝置，其中上述塗佈液係用以在基板形成抗蝕膜之抗蝕液。 The substrate processing apparatus according to claim 5, wherein the coating liquid is a resist liquid for forming a resist film on the substrate. 如請求項1至6中之任一項所記載之基板處理裝置，其中具備排氣量調整部，其係被設置在上述個別排氣路徑中，較第1壓力測量部之測量位置靠共通排氣路徑側，在對基板進行特定之處理之時的強排氣模式，和藉由較該強 排氣模式時之排氣量少之排氣量進行排氣之弱排氣模式之間進行切換，上述第1容許壓力範圍對應於上述強排氣模式及弱排氣模式之各個而被設定。 The substrate processing apparatus according to any one of claims 1 to 6, further comprising an exhaust gas amount adjusting unit provided in the individual exhaust gas path and having a common row than a measurement position of the first pressure measuring unit On the gas path side, the strong exhaust mode at the time of the specific treatment of the substrate, and by the stronger The exhaust gas amount in which the exhaust gas amount is small in the exhaust mode is switched between the weak exhaust modes of the exhaust gas, and the first allowable pressure range is set corresponding to each of the strong exhaust mode and the weak exhaust mode. 如請求項7所記載之基板處理裝置，其中上述排氣量調整部為調節風門，因應上述調節風門之狀態選擇與上述強排氣模式對應之第1容許壓力範圍及與上述弱排氣模式對應之第1容許壓力範圍之一方。 The substrate processing apparatus according to claim 7, wherein the exhaust gas amount adjusting unit is a damper, and a first allowable pressure range corresponding to the strong exhaust mode and a weak exhaust vent mode are selected in accordance with a state of the damper. One of the first allowable pressure ranges. 一種基板處理方法，其特徵在於包含：在基板處理部，進行產生包含附著成分之氛圍之基板處理的工程；藉由個別地被設置在複數之基板處理部，用以將在該基板處理部中之基板之氛圍予以排氣之個別排氣路徑，和上述個別排氣路徑之各個合流，藉由排氣動力設備被排氣之共通排氣路徑，將基板處理部之氛圍予以排氣之工程；藉由個別地被設置在上述個別排氣路徑之第1壓力測量部測量個別排氣路徑之排氣壓之工程；藉由被設置在上述共通排氣路徑之第2壓力測量部，測量在共通排氣路徑流通之排氣的排氣壓之工程；及根據各個的第1壓力測量部之測量值和第1容許壓力範圍之比較結果，和第2壓力測量部之測量值和第2容許壓力範圍之比較結果，檢測出在個別排氣路徑中的異常之工程。 A substrate processing method comprising: a substrate processing unit that performs substrate processing for generating an atmosphere containing an adherent component; and a substrate processing unit that is separately provided in a plurality of substrate processing units for use in the substrate processing unit a process in which the atmosphere of the substrate is exhausted and the individual exhaust paths are merged with each of the individual exhaust paths, and the atmosphere of the substrate processing unit is exhausted by the common exhaust path through which the exhaust power device is exhausted; Measuring the exhaust pressure of the individual exhaust paths by the first pressure measuring unit that is separately provided in the individual exhaust paths; and measuring the common line in the second pressure measuring unit provided in the common exhaust path The exhaust gas pressure of the exhaust gas flowing through the gas path; and the comparison between the measured value of the first pressure measuring unit and the first allowable pressure range, and the measured value of the second pressure measuring unit and the second allowable pressure range As a result of the comparison, an abnormality in the individual exhaust paths is detected. 如請求項9所記載之基板處理方法，其中上述基板處理係在對基板供給用以形成塗佈膜之塗佈液之狀態使基板在垂直軸周圍旋轉的塗佈處理。 The substrate processing method according to claim 9, wherein the substrate processing is a coating process of rotating the substrate around a vertical axis in a state in which a coating liquid for forming a coating film is supplied to the substrate. 如請求項9或10所記載之基板處理方法，其中使用排氣量調整部，其係被設置在上述個別排氣路徑中，較第1壓力測量部之測量位置靠共通排氣路徑側，在對基板進行特定之處理之時的強排氣模式，和藉由較該強排氣模式時之排氣量少之排氣量進行排氣之弱排氣模式之間進行切換，上述第1容許壓力範圍對應於上述強排氣模式及弱排氣模式之各個而被設定。 The substrate processing method according to claim 9 or 10, wherein the exhaust gas amount adjusting unit is provided in the individual exhaust gas path, and is located closer to the common exhaust gas path than the measurement position of the first pressure measuring unit. The first exhaust gas is exchanged between the strong exhaust mode at the time of the specific processing of the substrate and the weak exhaust mode in which the exhaust gas is smaller than the exhaust gas amount in the strong exhaust mode, and the first allowable The pressure range is set corresponding to each of the above-described strong exhaust mode and weak exhaust mode. 一種記憶媒體，其係記憶有被使用於基板處理裝置之電腦程式的記憶媒體，該基板處理裝置具備個別地被設置在進行產生包含附著成分之氛圍的基板處理之複數之基板處理部，用以將在該基板處理部中之基板之氛圍予以排氣之個別排氣路徑，和個別排氣路徑之各個合流，藉由排氣動力設備被排氣之共通排氣路徑，其特徵在於上述電腦程式係以實行如申請專利範圍第9至11項中之任一項所記載之基板處理方法之方式，編組步驟群。 A memory medium storing a memory medium used in a computer program of a substrate processing apparatus, wherein the substrate processing apparatus includes a substrate processing unit that is individually provided in a substrate processing for generating an atmosphere containing an adhesive component, and is used for a common exhaust path in which an atmosphere of a substrate in the substrate processing unit is exhausted, and an individual exhaust path merge, and a common exhaust path through which the exhaust power device is exhausted is characterized by the computer program The group of steps is grouped in such a manner that the substrate processing method described in any one of claims 9 to 11 is carried out.
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