JPH10312952A - Substrate processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processor precisely monitoring the abnormality of exhaust air and precisely performing the flow rate of the exhaust air. SOLUTION: Based on data on the 'flow rate value of exhausted air' of a substrate processing recipe, sub-CPUs 42 within a flow-rate control mechanism 40 of each substrate processing part 2 respectively independently control dampers 41, so that the measured values of exhaust air flow-rate meters 30 agree with the 'flow-rate value of the exhausted air', to control the flow of the exhausted air from a rotary processing part 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention processes a substrate (hereinafter, referred to as "substrate") such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, and a substrate for an optical disk while evacuating in a substrate processing means. The present invention relates to a substrate processing apparatus for performing

[0002]

2. Description of the Related Art Conventionally, in a single-wafer type substrate processing apparatus, a coater, a developer, a cleaning processing unit, etc. are evacuated below the processing units in order to prevent odors and particles generated during substrate processing. This forms an airflow that goes downward from above the substrate. An example is a substrate processing apparatus as shown in FIG.

In this apparatus, while the substrate W is rotated by the rotation processing unit 910 to perform the substrate processing, the exhaust is performed through the exhaust pipe 920 connected to the bottom thereof.
An exhaust pressure signal obtained by providing a differential pressure gauge 930 in an exhaust box 905 connected to the exhaust box 20 and constantly measuring the pressure difference between the atmospheric pressure in the exhaust box 905 and the external pressure (hereinafter referred to as “exhaust pressure”). Is connected to the CPU 90
3 to monitor the exhaust pressure. Then, due to the occurrence of an abnormality in the operation of the exhaust source in an exhaust line (not shown), the suction force is reduced, and the exhaust pressure is reduced (pressure difference is reduced).
And the worker performs maintenance work correspondingly.

The exhaust pipe 920 is provided with a damper 941a, and the CPU 903 controls the degree of opening (hereinafter referred to as "opening degree") to control the exhaust pressure in accordance with the processing of the substrate W. ing.

Further, in this device, a pipe 921 provided with a damper 941b is provided in each exhaust pipe 920,
One end is open to the atmosphere. This is the exhaust box 9
Since the exhaust pressure at 30 is monitored by a differential pressure gauge 930 and controlled to a predetermined value, changing the opening degree of one damper 941a may cause the exhaust pressure in the other exhaust pipe 920 to change. To prevent the damper 941a
The opening degree of the damper 941b and the opening degree of the damper 941b are reduced and the opening degree of the damper 941b is linked to eliminate the interference of exhaust between the dampers 941a and 941a.

[0006]

By the way, as shown in the drawing, the processing liquid P such as a resist may adhere to the exhaust pipe 920 near the rotation processing section 910 and harden. In such a case, since the exhaust pipe 920 is narrowed, the differential pressure gauge 9 in the exhaust box 905 is actually irrespective of the fact that the exhaust pressure in the rotation processing unit 910 has been reduced (differential pressure decrease).
The measured value of the differential pressure by 30 becomes a value higher than usual, and it may not be possible to detect the abnormality of the exhaust gas.

SUMMARY OF THE INVENTION The present invention is intended to overcome the above-mentioned problems in the prior art, and to provide a substrate processing apparatus capable of accurately monitoring an exhaust abnormality and performing accurate exhaust flow control. With the goal.

[0008]

In order to achieve the above object, an apparatus according to a first aspect of the present invention is a substrate processing apparatus for performing processing on a substrate while exhausting air in the substrate processing means. And a flow rate measuring means for measuring a flow rate of exhaust gas in the apparatus.

The apparatus according to a second aspect of the present invention is the substrate processing apparatus according to the first aspect, further comprising a flow rate control means for controlling an exhaust flow rate based on a measurement result of the exhaust flow rate by the flow rate measurement means. .

According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the second aspect, further comprising: setting means for setting a processing parameter including a set value of an exhaust flow rate, and storage for storing the processing parameter. Means, and the flow rate control means controls the exhaust flow rate so that the measurement result of the exhaust flow rate matches the set value of the exhaust flow rate in the processing parameter.

Further, according to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to the second or third aspect, further comprising a plurality of substrate processing means, one of which is connected to each of the plurality of substrate processing means. The plurality of substrate processing units are evacuated by an exhaust line, and each of the plurality of substrate processing units is separately provided with a flow rate measuring unit, and the exhaust flow rate in each of the plurality of substrate processing units is controlled by a flow control. It is characterized by being individually controlled by means.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION

[0013]

[1. FIG. 1 is an overall configuration diagram of a substrate processing apparatus 1 according to a first embodiment. Hereinafter, the substrate processing apparatus 1 will be described with reference to FIG.

As shown in the figure, the apparatus includes a rotation processing unit 10, an exhaust pipe 20, an exhaust flow meter 30, and a flow control mechanism 4 respectively.
0, two sets of substrate processing units 2 and 2 and one set of control unit 3, console 4 and exhaust box 5. While exhausting from both substrate processing units 2 and 2 through exhaust pipe 20, This is a substrate processing apparatus that performs processing on a substrate W with a processing liquid in the substrate processing units 2 and 2.

Each of the rotation processing units 10 includes a chuck 12 rotatable by a drive motor (not shown) in a cup 11. The substrate W is held on the chuck 12 while being held by the processing liquid supply mechanism (not shown). The processing liquid is supplied to perform the substrate processing.

The exhaust pipes 20 are respectively connected between the bottom of the cup 11 of the rotation processing unit 10 and the exhaust box 5, and guide the exhaust from the rotation processing unit 10 to the exhaust box 5.

The exhaust flow meters 30 are provided in the respective exhaust pipes 20 and are flow meters for measuring the flow rate of exhaust gas passing through the exhaust pipes 20. Note that the exhaust flow meter 30 can also be constituted by a measuring device that converts the exhaust flow rate using an anemometer, an anemometer, or the like.

The flow control mechanism 40 has a damper 41 for adjusting the exhaust flow rate in each exhaust pipe 20 and a sub CPU 42 connected to the damper 41 and the exhaust flow meter 30. Sub C according to the signal
The PU 42 controls the damper 41 to monitor and control the exhaust flow rate in the exhaust pipe 20.

The control unit 3 includes a main CPU 31 and a memory 32 connected to the main CPU 31.
U31 is connected to the sub CPU 42 of each flow rate control mechanism 40, and also connected to the drive motor, chuck 12 and processing liquid supply mechanism (not shown) of each rotation processing unit 10, based on a substrate processing recipe described later. Control them.

The console 4 selects a substrate processing recipe, which will be described later, by performing key input while the operator confirms the display, and stores the selection result in the memory 32 in the control unit 3.
It is a display / input means for setting to.

The exhaust boxes 5 are connected to the respective exhaust pipes 20 of the two sets of substrate processing units 2 and are connected to exhaust lines provided at external facilities, so that the exhaust from each of the substrate processing units 2 is controlled. Collect and discharge to the outside through the exhaust line.

Next, the main part will be described in more detail.

The substrate processing recipe is a program relating to processing procedures and processing conditions for controlling the substrate processing performed by the rotation processing unit 10, for example, parameters such as the rotation speed and rotation time of the substrate W and the type of the supply processing liquid. A plurality of different ones are stored in the memory 32 in the control unit 3 in advance, and can be selected according to the characteristics of the substrate W to be processed, the type of the processing liquid, and the like.

In this apparatus, a parameter of "exhaust flow value" is provided in the substrate processing recipe. The “exhaust flow rate value” is a numerical value representing the amount of gas per unit time exhausted from the rotation processing unit 10 through the exhaust pipe 20, the exhaust box 5, and the exhaust line during substrate processing.

After the operator selects a plurality of substrate processing recipes including the “exhaust flow rate value” on the console 4 and sets them in the memory 32, the substrate processing is started. At the time of substrate processing, the data of the substrate processing recipe designated in this manner is transferred to the sub CPU 4 in the flow control mechanism 40 of each substrate processing unit 2.
2, and each sub CPU 42 independently controls each damper 41 according to the substrate processing recipe.
That is, each sub CPU 42 controls the degree of opening of the damper 41 based on the measurement result signal of each exhaust flow meter 30, so that the exhaust flow value of the measurement result is equal to the above-described “exhaust flow value” in the substrate processing recipe. Rotation processing unit 1 to match
Control the exhaust flow from zero.

In this apparatus, different types of substrate processing can be performed in each substrate processing section 2. That is, when processing different types of substrates W in each substrate processing unit 2 or performing processing using different types of processing liquids, different substrate processing recipes are selected and set, and those data are stored in the main CPU 31. Is transmitted to each sub-CPU 42, and each sub-CPU 42 controls the exhaust gas flow in accordance with the control, in particular, controls the exhaust flow rate to the data value of the “exhaust flow rate value” of each substrate processing recipe. Conversely, when the same type of substrate processing is performed in both substrate processing units 2 and 2, the same substrate processing recipe is selected and set for each substrate processing unit 2 and 2, and the data is transmitted to main CPU 31 by main CPU 31. This is transmitted to the sub CPU 42, and the same control is performed based on the transmission.

As described above, according to the substrate processing apparatus 1 of the first embodiment, since the exhaust flow meter 30 for measuring the exhaust flow rate in the substrate processing section 2 is provided, the exhaust pipe 20 is used for fixing the processing liquid or the like. It is possible to accurately monitor abnormalities in the exhaust gas such as when clogging occurs.

Further, since the sub CPU 42 controls the opening of the damper 41 based on the measurement result of the exhaust flow rate by the exhaust flow meter 30, the exhaust flow rate can be accurately controlled. The generated odor, particles and the like can be reliably removed.

Also, since the exhaust flow meters 30 are provided in each of the exhaust pipes 20 instead of the exhaust box 5 and the exhaust flow rates are controlled independently of each other, the interference of the exhaust from each substrate processing unit 2 affects the control. Since there is no need to provide two dampers 41 in each substrate processing unit 2 unlike the conventional apparatus shown in FIG. 3, the piping configuration can be simplified.

Further, a sub CPU 42 is provided in each of the substrate processing sections 2 and independently controls the exhaust flow rate, so that the time sharing by one main CPU 31 as in a second embodiment to be described later is performed. Exhaust flow rate control can be performed in more real time as compared with control using a ring.

[0031]

[2. FIG. 2 is an overall configuration diagram of a substrate processing apparatus 1 according to a second embodiment. Hereinafter, the substrate processing apparatus 1 will be described with reference to FIG.

In this substrate processing apparatus 1, the flow rate control mechanism 40 in each substrate processing unit 2 is not provided with a sub CPU, but is composed of each damper 41 and a main CPU 31, and the main CPU 31 performs time sharing according to a substrate processing recipe. The only difference is that the exhaust gas flow rates of the two substrate processing units 2 and 2 are controlled by performing the control according to. In this case as well, each substrate processing unit 2 can be controlled by a different cleaning processing recipe such as a different exhaust flow rate value, or can be controlled by the same substrate processing recipe.

Other configurations are completely the same as those of the substrate processing apparatus 1 of the first embodiment.

As described above, according to the substrate processing apparatus 1 of the second embodiment, it is possible to perform more real-time control by the sub CPU 42 of each flow control mechanism 40 in the apparatus of the first embodiment. The effect is as follows.

That is, while the exhaust flow meters 30 are individually provided in the respective substrate processing units 2, the flow control means may be separately provided in the individual substrate processing units 2. The generation of the exhaust flow rate control signal for the unit 2 may be performed intensively.

In other words, it suffices if the exhaust gas flow rate in each substrate processing unit 2 can be controlled individually, and it is arbitrary how far the flow control means is physically dispersed in each substrate processing unit 2. .

[0037]

[3. Modification In the substrate processing apparatus 1 of the first and second embodiments, the exhaust flow rate is controlled by adjusting the opening degree of the damper 41 in accordance with the measurement signal of the exhaust flow rate by the exhaust flow meter 30. However, the present invention is not limited to this.
2, the control of the damper 41 may not be performed, and if the measurement result signal from the exhaust flow meter 30 indicates an abnormal value, a warning may be issued, and manual control may be performed such that an operator manually handles the alarm.

In the substrate processing apparatuses 1 of the first and second embodiments, a parameter “exhaust flow value” is provided for each substrate processing recipe, and the substrate processing recipe is selected to select the substrate processing recipe. Although the exhaust flow rate is controlled to a value corresponding to the type, the present invention is not limited to this.
May be changed, and only the “exhaust flow rate value” may be input as independent data separately from the substrate processing recipe.

Further, in the substrate processing apparatus 1 of the first and second embodiments, the operator selects and sets the substrate processing recipe including the “exhaust flow value” on the console 4. Is not limited to this, and may be selected by other input means such as a dial.

Although the substrate processing apparatus 1 according to the first and second embodiments has two substrate processing units 2, the present invention is not limited to this. More than one may be provided.

Further, in the substrate processing apparatuses 1 of the first and second embodiments, the sub CPU
Although the opening degree of the damper 41 is adjusted by the CPU 42 or the main CPU 31, the present invention is not limited to this, and a dedicated control circuit for controlling the damper 41 may be provided,
Other control mechanisms such as a flow control valve for mechanically adjusting the flow rate may be used.

[0042]

As described above, according to the first to fourth aspects of the present invention, since the flow rate measuring means for measuring the flow rate of exhaust gas in the substrate processing means is provided, abnormal exhaust gas such as when the exhaust pipe is clogged. Can be accurately monitored.

Further, according to the second aspect of the present invention, since the flow rate control means controls the exhaust flow rate based on the measurement result of the exhaust flow rate by the flow rate measurement means, the exhaust flow rate can be accurately controlled.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an overall configuration diagram of a substrate processing apparatus according to a second embodiment of the present invention.

FIG. 3 is an overall configuration diagram of a conventional device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Substrate processing part 3 Control part 4 Console 10 Rotation processing part 30 Exhaust flow meter 31 Main CPU 32 Memory 40 Flow control mechanism 41 Damper 42 Sub CPU W Substrate

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yasuo Imanishi 322 Hahazushi Furukawa-cho, Fushimi-ku, Kyoto Dinichi Screen Manufacturing Co., Ltd. Dainippon Screen Manufacturing Co., Ltd. (72) Inside the Rakusai Office (72) Inventor Takanori Kawamoto 322 Hashizushi Furukawa-cho, Fushimi-ku, Kyoto-shi Dainippon Screen Manufacturing Co., Ltd. 322 Furukawacho Dainichi Screen Manufacturing Co., Ltd.Rakusai Office

Claims (4)

[Claims] 1. A substrate processing apparatus for performing processing on a substrate while exhausting gas in a substrate processing means, comprising: a flow rate measuring means for measuring an exhaust flow rate in the substrate processing means. 2. The substrate processing apparatus according to claim 1, further comprising a flow rate control unit that controls the exhaust flow rate based on a measurement result of the exhaust flow rate by the flow rate measurement unit. apparatus. 3. The substrate processing apparatus according to claim 2, further comprising: a setting unit configured to set a processing parameter including a set value of the exhaust flow rate; and a storage unit configured to store the processing parameter. The substrate processing apparatus, wherein the flow rate control means controls the exhaust flow rate so that a flow rate measurement result matches a set value of the exhaust flow rate in the processing parameter. 4. The substrate processing apparatus according to claim 2, further comprising a plurality of said substrate processing means, said plurality of substrate processing means being connected by one exhaust line connected to each of said plurality of substrate processing means. Wherein the flow rate measuring means is individually provided in each of the plurality of substrate processing means, and the exhaust flow rate in each of the plurality of substrate processing means is individually controlled by the flow rate controlling means. A substrate processing apparatus, comprising: