TW201741481A - Film formation method and manufacturing method of laminate substrate using the same capable of eliminating color difference of a long strip-shape resin film in the width direction while making etching failure difficult to occur - Google Patents

Film formation method and manufacturing method of laminate substrate using the same capable of eliminating color difference of a long strip-shape resin film in the width direction while making etching failure difficult to occur Download PDF

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TW201741481A
TW201741481A TW106106435A TW106106435A TW201741481A TW 201741481 A TW201741481 A TW 201741481A TW 106106435 A TW106106435 A TW 106106435A TW 106106435 A TW106106435 A TW 106106435A TW 201741481 A TW201741481 A TW 201741481A
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film
layer
metal
resin film
roll
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TWI736590B (en
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渡邉寛人
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住友金屬礦山股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0036Reactive sputtering
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/087Oxides of copper or solid solutions thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/20Metallic material, boron or silicon on organic substrates
    • C23C14/205Metallic material, boron or silicon on organic substrates by cathodic sputtering
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5873Removal of material
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

The present invention provides a film formation method which can eliminate color difference of a long strip-shape resin film in the width direction while making etching failure difficult to occur. The film formation method of the present invention uses a dry plating method, such as a sputtering method, in a vacuum chamber 10 to form a first cover film and a second cover film respectively on two sides of the long strip-shape resin film F which is transported from a roll-out roll 11 to a take-up roll 24 in a roll-to-roll manner, and a dry etching treatment is implemented by appropriately irradiating an ion beam from an ion source 29 onto the surface of the first cover film between a first time take-up and a second-time take-up. The first time take-up is implemented by using the take-up roll 24 after the aforementioned first cover film is formed on one side of the long strip-shape resin film F, and the second time take-up is implemented by using the take-up roll 24 after the aforementioned second cover film is formed on the other side of the first cover film on the long strip-shape resin film.

Description

成膜方法及使用其的積層體基板的製造方法 Film forming method and method for producing laminated substrate using same

本發明涉及一種利用乾式鍍敷法在以輥對輥方式搬送的長條狀樹脂膜的兩面形成覆膜的方法以及使用該成膜方法的積層體基板的製造方法。 The present invention relates to a method of forming a coating on both surfaces of a long resin film conveyed by a roll-to-roll method by a dry plating method, and a method of producing a laminated substrate using the film forming method.

在手機、可擕式電子書設備、自動販賣機、汽車導航等電子設備所具備的平板顯示器(FPD)的表面設置“觸控面板”的技術開始普及。“觸控面板”可大致分為電阻型與靜電電容型,“電阻型”的觸控面板的主要部分以由樹脂膜構成的透明基板、設置於該基板上的X座標(或Y座標)檢測電極片及Y座標(或X座標)檢測電極片、以及設置於這些電極片之間的絕緣體間隔件所構成。 The technology of providing a "touch panel" on the surface of a flat panel display (FPD) provided in an electronic device such as a mobile phone, a portable electronic book device, a vending machine, or a car navigation has begun to spread. The "touch panel" can be roughly classified into a resistive type and a capacitive type, and the main part of the "resistive type" touch panel is detected by a transparent substrate composed of a resin film and an X coordinate (or Y coordinate) provided on the substrate. The electrode sheet and the Y coordinate (or X coordinate) detection electrode sheet and the insulator spacer disposed between the electrode sheets.

這些X座標檢測電極片及Y座標檢測電極片通常是藉由絕緣體間隔件而隔開,在用筆等點壓時兩座標檢測電極片在該部位電接觸。由此,能夠檢測出筆所點觸的位置(X座標、Y座標),而形成只要使筆移動便隨時識別每一個座標而最終能夠進行文字輸入的機制。 The X coordinate detecting electrode sheets and the Y coordinate detecting electrode sheets are usually separated by an insulator spacer, and the two coordinate detecting electrode sheets are electrically contacted at the portion when pressed by a pen or the like. Thereby, the position (X coordinate, Y coordinate) touched by the pen can be detected, and a mechanism for recognizing each of the coordinates at any time as long as the pen is moved can finally perform character input.

另一方面,“靜電電容型”的觸控面板具有如下構造:X座標(或Y座標)檢測電極片與Y座標(或X座標)檢測電極片隔著絕緣片 而積層,進而在其上配置著玻璃等絕緣體。而且,成為如下機制:在將手指靠近該玻璃等絕緣體時,其附近的X座標檢測電極與Y座標檢測電極的電容發生變化,因此能夠進行位置檢測。 On the other hand, the "static capacitance type" touch panel has the following structure: an X-coordinate (or Y-coordinate) detection electrode sheet and a Y-coordinate (or X-coordinate) detection electrode sheet with an insulating sheet interposed therebetween. The laminate is further provided with an insulator such as glass. Further, when the finger is brought close to the insulator such as glass, the capacitance of the X coordinate detecting electrode and the Y coordinate detecting electrode in the vicinity thereof is changed, so that the position detection can be performed.

作為形成於所述電極片(也稱為電極基板膜)上的具有特定電路圖案的電極用導電材料,以往,廣泛使用如專利文獻1所公開的ITO(氧化銦-氧化錫)等的透明導電膜。另外,隨著觸控面板的大型化,也開始使用如專利文獻2及專利文獻3等所公開的由金屬製細線構成的網眼構造的金屬膜。 As a conductive material for an electrode having a specific circuit pattern formed on the electrode sheet (also referred to as an electrode substrate film), conventionally, transparent conductive materials such as ITO (indium oxide-tin oxide) disclosed in Patent Document 1 are widely used. membrane. In addition, as the size of the touch panel has increased, a metal film having a mesh structure made of a thin metal wire disclosed in Patent Document 2 and Patent Document 3 has been used.

在將所述透明導電膜與金屬製細線(金屬膜)進行比較的情況下,透明導電膜由於在可見波長區域的透過性優異,所以具有幾乎不會視認到電極等的電路圖案的優點,但由於電阻值比金屬製細線(金屬膜)高,所以具有不利於觸控面板的大型化及回應速度的高速化的缺點。另一方面,金屬製細線(金屬膜)由於電阻值低,所以有利於觸控面板的大型化及回應速度的高速化,但由於在可見波長區域的反射率高,所以即使加工為微細的網眼構造,有時在高亮度照明下也會視認到電路圖案,而有使產品價值降低的缺點。 When the transparent conductive film is compared with a metal thin wire (metal film), since the transparent conductive film is excellent in permeability in a visible wavelength region, it has an advantage that a circuit pattern such as an electrode is hardly observed, but Since the resistance value is higher than that of the metal thin wire (metal film), it is disadvantageous in that the size of the touch panel is increased and the response speed is increased. On the other hand, since the metal thin wire (metal film) has a low resistance value, it is advantageous in increasing the size of the touch panel and increasing the response speed. However, since the reflectance in the visible wavelength region is high, even a fine mesh is processed. The ocular structure sometimes recognizes the circuit pattern under high-intensity illumination, and has the disadvantage of lowering the value of the product.

因此,在專利文獻4及專利文獻5中,為了發揮電阻值低的所述金屬製細線(金屬膜)的特性,提出如下方法:在由樹脂膜構成的透明基板與金屬製細線的金屬膜之間介置由金屬氧化物構成的金屬吸收層(也稱為黑化膜),從而降低從透明基板側觀測的金屬製細線(金屬膜)的反射。 Therefore, in Patent Document 4 and Patent Document 5, in order to exhibit the characteristics of the metal thin wire (metal film) having a low electric resistance value, a method is proposed in which a transparent substrate made of a resin film and a metal film made of a metal thin wire are used. A metal absorbing layer (also referred to as a blackening film) made of a metal oxide is interposed to reduce reflection of a metal thin wire (metal film) observed from the transparent substrate side.

在具備該由金屬氧化物構成的金屬吸收層的電極片的製作 中,從謀求金屬氧化物的成膜效率的高效率化的觀點來講,通常進行如下操作,由此製作出成為電極基板膜的基材的積層體基板,所述操作為:藉由在反應性氣體環境下使用金屬靶材(金屬材料)進行反應性濺鍍,而在連續搬送的長條狀樹脂膜的表面連續形成金屬吸收層,然後通過在惰性氣體環境下使用銅等金屬靶材(金屬材料)進行濺鍍,而在所述金屬吸收層上連續形成金屬層。然後進行如下操作:通過利用氯化銅水溶液或氯化鐵水溶液等蝕刻液對由該等金屬吸收層及金屬層構成的積層膜進行蝕刻處理,而在該積層膜(金屬吸收層及金屬層)圖案化加工電極等的電路圖案。 Fabrication of an electrode sheet having the metal absorbing layer made of a metal oxide In order to increase the efficiency of film formation efficiency of the metal oxide, a laminate substrate which is a substrate of the electrode substrate film is usually produced by the following operation: In a gas atmosphere, a metal target (metal material) is used for reactive sputtering, and a metal absorption layer is continuously formed on the surface of the continuously transported long resin film, and then a metal target such as copper is used in an inert gas atmosphere ( The metal material is sputtered while a metal layer is continuously formed on the metal absorbing layer. Then, the laminated film formed of the metal absorbing layer and the metal layer is etched by using an etching solution such as a copper chloride aqueous solution or a ferric chloride aqueous solution, and the laminated film (metal absorbing layer and metal layer) is etched. The circuit pattern of the processed electrode or the like is patterned.

因此,對於成為電極基板膜的基材的積層體基板要求如下特性:由金屬吸收層及金屬層構成的積層膜易於利用氯化銅水溶液或氯化鐵水溶液等蝕刻液而被蝕刻的特性、以及利用該蝕刻而被圖案化加工後的電極等的電路圖案在高亮度照明下不易被視認的特性。 Therefore, the laminated substrate which is the base material of the electrode substrate film is required to have such a property that the laminated film made of the metal absorbing layer and the metal layer is easily etched by an etching solution such as a copper chloride aqueous solution or a ferric chloride aqueous solution, and The circuit pattern of the electrode or the like which is patterned by the etching is not easily visually recognized under high-intensity illumination.

[專利文獻1]日本特開2003-151358號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-151358

[專利文獻2]日本特開2011-018194號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-018194

[專利文獻3]日本特開2013-069261號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2013-069261

[專利文獻4]日本特開2014-142462號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2014-142462

[專利文獻5]日本特開2013-225276號公報 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2013-225276

但是,在將積層膜製作於長條狀樹脂膜的兩面的情況下,會產生下段所述之問題;其中,該積層膜係藉由如下方法而積層者,該方法 為:如上述般藉由在含有氧氣的反應性氣體環境下使用Ni系的金屬靶材(金屬材料)進行反應性濺鍍而在長條狀樹脂膜的表面連續形成由金屬氧化物構成的金屬吸收層,然後藉由使用銅等金屬靶材(金屬材料)進行濺鍍而在該金屬吸收層上連續形成金屬層。 However, in the case where the laminated film is formed on both surfaces of the elongated resin film, the problem described in the following paragraph occurs; wherein the laminated film is laminated by the following method, the method In the above, a metal composed of a metal oxide is continuously formed on the surface of the elongated resin film by performing reactive sputtering using a Ni-based metal target (metal material) in a reactive gas atmosphere containing oxygen. The absorption layer is then continuously formed on the metal absorption layer by sputtering using a metal target (metal material) such as copper.

即,為了提高與被積層的金屬的密合性,有時會在長條狀樹脂膜的兩面設置易接著層,在該情況下,如果首先於在長條狀樹脂膜的一面連續形成金屬吸收層及金屬層作為第1覆膜之後將其呈卷狀捲取,然後再將其捲出以便在長條狀樹脂膜的另一面形成第2覆膜,那麼以長條狀樹脂膜的寬度方向上的中央部與端部之間為界,在金屬層面上發現能夠通過目視確認的略微的色差。這種金屬層上的色差可能會造成積層體基板的外觀不良,而且如果在此狀態下直接藉由蝕刻圖案化加工為電極電路,那麼在所述顏色的交界部分會產生蝕刻速度差而造成蝕刻不良。 In other words, in order to improve the adhesion to the metal to be laminated, an easy-adhesion layer may be provided on both sides of the elongated resin film. In this case, first, metal absorption is continuously formed on one side of the elongated resin film. After the layer and the metal layer are taken up as a first film and then wound up in a roll shape, and then rolled up to form a second film on the other surface of the elongated resin film, the width direction of the elongated resin film is obtained. A boundary between the center portion and the end portion is defined, and a slight chromatic aberration that can be visually confirmed is found on the metal level. The chromatic aberration on the metal layer may cause poor appearance of the laminated body substrate, and if it is directly processed into an electrode circuit by etching etching in this state, an etching speed difference may occur at the boundary portion of the color to cause etching. bad.

本發明是鑒於這種以往的問題點而完成,目的在於提供一種成膜方法,於在長條狀樹脂膜的兩面進行成膜而製作積層體基板時,能夠消除長條狀樹脂膜的寬度方向的色差而不易發生蝕刻不良。 The present invention has been made in view of such a conventional problem, and it is an object of the present invention to provide a film forming method capable of eliminating the width direction of a long resin film when a laminated body substrate is formed on both surfaces of a long resin film. The chromatic aberration is not prone to poor etching.

為了達成所述目的,本發明所提供的成膜方法是利用乾式鍍敷法在以輥對輥方式搬送的長條狀樹脂膜的兩面分別形成第1覆膜及第2覆膜,其特徵在於:在第1次捲取與第2次捲取之間對所述第1覆膜的表面實施乾式蝕刻處理,所述第1次捲取是於將所述第1覆膜形成在所述長條狀樹脂膜的一面之後,所述第2次捲取是於將第2覆膜形成在已形成所述第1覆膜的長條狀樹脂膜的另一面之後。 In order to achieve the above object, the film forming method according to the present invention is characterized in that a first coating film and a second coating film are respectively formed on both surfaces of a long resin film which is conveyed by a roll-to-roll method by a dry plating method. : performing a dry etching process on the surface of the first film between the first winding and the second winding, wherein the first winding is to form the first film in the length After one side of the strip-shaped resin film, the second winding is performed after the second coating film is formed on the other surface of the elongated resin film on which the first coating film has been formed.

根據本發明,在長條狀樹脂膜的兩面進行成膜而製作積層體基板時,能夠消除長條狀樹脂膜的寬度方向的色差,因此在使用氧化劑等化學液進行蝕刻加工時能夠消除該寬度方向的蝕刻加工性的差別。 According to the present invention, when a laminate substrate is formed on both surfaces of a long resin film, chromatic aberration in the width direction of the elongated resin film can be eliminated. Therefore, the width can be eliminated when etching is performed using a chemical liquid such as an oxidizing agent. The difference in etching processability of the direction.

F‧‧‧長條狀樹脂膜 F‧‧‧Long strip resin film

10‧‧‧真空室 10‧‧‧vacuum room

10a‧‧‧間隔板 10a‧‧‧ Spacer

11‧‧‧捲出輥 11‧‧‧Rolling roll

12a、12b、23‧‧‧自由輥 12a, 12b, 23‧‧‧ free rolls

13‧‧‧冷卻輥 13‧‧‧Cooling roller

14、22‧‧‧張力傳感輥 14, 22‧‧‧ Tension sensing roller

15‧‧‧前進料輥 15‧‧‧Advance roll

16‧‧‧罐狀輥 16‧‧‧canned rolls

17、18、19、20‧‧‧磁控濺鍍陰極 17, 18, 19, 20‧ ‧ magnetically controlled sputtering cathode

21‧‧‧後進料輥 21‧‧‧Back feed roller

24‧‧‧捲取輥 24‧‧‧Winding roller

25a.25b、26a.26b、27a.27b、28a.28b‧‧‧氣體釋放管 25a. 25b, 26a. 26b, 27a. 27b, 28a. 28b‧‧‧ gas release tube

29‧‧‧乾式蝕刻手段 29‧‧‧dry etching

50‧‧‧樹脂膜(透明基板) 50‧‧‧ resin film (transparent substrate)

51‧‧‧金屬吸收層 51‧‧‧Metal absorption layer

52‧‧‧利用乾式成膜法而形成的金屬層(銅層) 52‧‧‧Metal layer (copper layer) formed by dry film formation

53‧‧‧利用濕式成膜法而形成的金屬層(銅層) 53‧‧‧Metal layer (copper layer) formed by wet film formation

54‧‧‧第2金屬吸收層 54‧‧‧2nd metal absorbing layer

51a‧‧‧經圖案化加工的金屬吸收層 51a‧‧‧ patterned metal absorbing layer

52a‧‧‧經圖案化加工的、利用乾式成膜法而形成的金屬層(銅層) 52a‧‧‧ Metal layer (copper layer) formed by dry film formation by patterning

53a‧‧‧利用濕式成膜法而形成的金屬層(銅層) 53a‧‧‧Metal layer (copper layer) formed by wet film formation

54a‧‧‧經圖案化加工的第2金屬吸收層 54a‧‧‧ patterned second metal absorbing layer

圖1是能夠適宜地實施本發明的成膜方法的成膜裝置(濺鍍捲繞鍍膜機(sputtering web coater))的示意前視圖。 Fig. 1 is a schematic front view of a film forming apparatus (sputtering web coater) capable of suitably performing the film forming method of the present invention.

圖2是示意性地表示利用以往的成膜方法而製作的積層體基板所產生的外觀上的缺陷的立體圖。 FIG. 2 is a perspective view schematically showing an appearance defect caused by a laminate substrate produced by a conventional film formation method.

圖3是在透明基板的兩面具有第1層的金屬吸收層及第2層的金屬層的積層體基板的示意剖面圖,所述金屬吸收層及金屬層是利用本發明的成膜方法而製作。 3 is a schematic cross-sectional view showing a laminated body substrate having a first metal absorbing layer and a second metal layer on both surfaces of a transparent substrate, wherein the metal absorbing layer and the metal layer are formed by the film forming method of the present invention. .

圖4是具有經厚膜化的金屬層的積層體基板的示意剖面圖,所述經厚膜化的金屬層是藉由在圖3的金屬層之上進而利用濕式成膜法形成金屬層而獲得。 4 is a schematic cross-sectional view of a laminate substrate having a thick filmed metal layer formed by a wet film formation method on the metal layer of FIG. And get.

圖5是第2積層體基板的示意剖面圖,所述第2積層體基板是藉由在圖4的經厚膜化的金屬層之上進而利用乾式鍍敷法形成第3層的第2金屬吸收層而獲得。 5 is a schematic cross-sectional view of a second laminated body substrate in which a second metal layer of a third layer is formed by a dry plating method on the thick-filmed metal layer of FIG. Obtained by the absorption layer.

圖6是在透明基板的兩面分別形成金屬製積層細線所得的電極基板膜的示意剖面圖。 Fig. 6 is a schematic cross-sectional view showing an electrode substrate film obtained by forming metal laminated thin wires on both surfaces of a transparent substrate.

以下,採用藉由濺鍍而進行的成膜方法作為本發明的成膜方法的一具體例,一邊參照圖1,一邊對能夠適宜地實施該成膜方法的成膜裝置進行說明。該圖1所示的成膜裝置也被稱為濺鍍捲繞鍍膜機,主要由如下者所構成:搬送手段,以輥對輥方式將長條狀樹脂膜F從捲出輥11經由罐狀輥16搬送至捲取輥24;成膜手段,在長條狀樹脂膜F已被捲繞於罐狀輥16的外周面時對其表面連續且高效地實施濺鍍成膜;以及真空室10,收納這些手段。 In the following, a film forming method by sputtering is used as a specific example of the film forming method of the present invention, and a film forming apparatus capable of appropriately performing the film forming method will be described with reference to FIG. 1 . The film forming apparatus shown in FIG. 1 is also called a sputter winding coater, and is mainly composed of a transfer means for passing the elongated resin film F from the take-up roll 11 via a can by a roll-to-roll method. The roll 16 is conveyed to the take-up roll 24, and the film forming means continuously and efficiently performs sputtering film formation on the surface of the long resin film F when it is wound around the outer peripheral surface of the can roll 16; and the vacuum chamber 10 , to accommodate these means.

具體地進行說明,在真空室10組裝有乾式泵、渦輪分子泵、低溫盤管(cryo coil)等各種裝置(未圖示),在濺鍍成膜時將真空室10內的壓力降低到最終壓力10-4Pa左右之後,通過導入濺鍍氣體,能夠將所述真空室10內的壓力調整至0.1~10Pa左右。濺鍍氣體使用氬氣等眾所周知的氣體,根據目的進而添加氧氣等氣體。真空室10的形狀及材質,只要能夠承受這種減壓狀態,就沒有特別限定,可使用各種形狀及材質。在真空室內設置著間隔板10a,以便從設置著搬送用輥群的空間隔離出用來進行濺鍍成膜的空間。 Specifically, various devices (not shown) such as a dry pump, a turbo molecular pump, and a cryo coil are incorporated in the vacuum chamber 10, and the pressure in the vacuum chamber 10 is lowered to the final state at the time of sputtering film formation. After the pressure is about 10 -4 Pa, the pressure in the vacuum chamber 10 can be adjusted to about 0.1 to 10 Pa by introducing a sputtering gas. As the sputtering gas, a well-known gas such as argon gas is used, and a gas such as oxygen is further added depending on the purpose. The shape and material of the vacuum chamber 10 are not particularly limited as long as they can withstand such a reduced pressure state, and various shapes and materials can be used. A partition plate 10a is provided in the vacuum chamber to isolate a space for performing sputtering deposition from a space in which the transfer roller group is disposed.

在從捲出輥11至罐狀輥16的搬送路徑上,依次配置著:自由輥12a、12b,導引長條狀樹脂膜F;冷卻輥13,捲繞長條狀樹脂膜F並進行冷卻;張力傳感輥14,對比罐狀輥16靠上游側的長條狀樹脂膜F的張力進行測定;以及馬達驅動的前進料輥15,其為了使將被送入至罐狀輥16的長條狀樹脂膜F密合於罐狀輥16的外周面而對罐狀輥16的圓周速度進 行調整。 On the transport path from the unwinding roller 11 to the can roller 16, the free rollers 12a and 12b are arranged in this order to guide the elongated resin film F, and the cooling roller 13 winds the elongated resin film F and cools it. The tension sensing roller 14 measures the tension of the elongated resin film F on the upstream side of the can roller 16; and the motor-driven advance roller 15 which is fed to the length of the can roller 16 The strip-shaped resin film F is adhered to the outer peripheral surface of the can roller 16 to the peripheral speed of the can roller 16 Line adjustment.

關於罐狀輥16,其內部循環著已在真空室10的外部經調溫的冷媒,能夠在利用成膜手段對捲繞於外周面的長條狀樹脂膜F實施熱負載施加處理時使該長條狀樹脂膜F冷卻。關於冷卻輥13,其內部也循環著冷媒,能夠在利用與其外周面對向而配設的乾式蝕刻手段29對長條狀樹脂膜F實施熱負載施加處理時使該長條狀樹脂膜F冷卻。另外,在不啟動乾式蝕刻手段29的情況下,也可停止冷卻輥13內冷媒的循環。 The can roller 16 is internally circulated with a refrigerant that has been tempered outside the vacuum chamber 10, and can be subjected to a heat load application process when the long resin film F wound around the outer peripheral surface is subjected to a heat load application process by a film forming means. The elongated resin film F is cooled. In the chill roll 13, the refrigerant is circulated inside, and the long resin film F can be cooled by performing a heat load application process on the long resin film F by the dry etching means 29 disposed to face the outer periphery thereof. . Further, when the dry etching means 29 is not activated, the circulation of the refrigerant in the cooling roll 13 can be stopped.

在從罐狀輥16至捲取輥24的搬送路徑上,除了沒有與所述冷卻輥13及第2個自由輥12b對應的輥以外,其他與上文所述相同,依次配置著:馬達驅動的後進料輥21,對罐狀輥16的圓周速度進行調整;張力傳感輥22,對比罐狀輥16靠下游側的長條狀樹脂膜F的張力進行測定;以及自由輥23,導引長條狀樹脂膜F。 In the transport path from the can roller 16 to the take-up roller 24, except that there is no roller corresponding to the cooling roller 13 and the second free roller 12b, as described above, the motor drive is sequentially disposed. The rear feed roller 21 adjusts the peripheral speed of the can roller 16; the tension sensing roller 22 measures the tension of the elongated resin film F on the downstream side of the can roller 16; and the free roller 23 guides Long strip resin film F.

在所述捲出輥11及捲取輥24中,通過由粉末離合器等所實施的轉矩控制,而保持著長條狀樹脂膜F的張力平衡。另外,藉由馬達驅動的罐狀輥16的旋轉以及與該旋轉連動而旋轉的馬達驅動的前進料輥15及後進料輥21,從捲出輥11捲出的長條狀樹脂膜F在沿著由所述罐狀輥16等輥群所劃定的搬送路徑而搬送後,利用捲取輥24而被捲取。 In the take-up roll 11 and the take-up roll 24, the tension balance of the elongated resin film F is maintained by the torque control by the powder clutch or the like. Further, the long resin film F wound from the take-up roll 11 is along the rotation of the can-shaped roller 16 driven by the motor and the motor-driven forward feed roller 15 and the rear feed roller 21 which are rotated in conjunction with the rotation. After being conveyed by the conveyance path defined by the roll group such as the can roller 16, the take-up roll 24 is taken up.

在與罐狀輥16的外周面中捲繞長條狀樹脂膜F的區域相對向的位置,沿著罐狀輥16的搬送路徑依次設置著4個磁控濺鍍陰極17、18、19及20作為成膜手段,且在附近設置著能夠各自釋放反應性氣體的4對氣體釋放管25a.25b、26a.26b、27a.27b及28a.28b。另外,如果使用板狀的靶材,進行所述金屬吸收層及金屬層的濺鍍成膜,那麼有時會在該靶材上產生結 核(異物的生長)。如果這會造成問題,那麼優選使用不會產生結核且靶材的使用效率也高的圓筒形旋轉靶材。 At the position facing the region where the elongated resin film F is wound in the outer circumferential surface of the can roller 16, the four magnetron sputtering cathodes 17, 18, 19 are sequentially disposed along the conveying path of the can roller 16. 20 as a film forming means, and in the vicinity are provided with four pairs of gas release tubes 25a capable of releasing reactive gases. 25b, 26a. 26b, 27a. 27b and 28a. 28b. In addition, if a plate-shaped target is used and the metal absorbing layer and the metal layer are sputter-deposited, a knot may be formed on the target. Nuclear (the growth of foreign bodies). If this causes a problem, it is preferable to use a cylindrical rotating target which does not generate nodules and which is also highly efficient in use of the target.

所述4個磁控濺鍍陰極17~20之中,例如在最初兩個陰極17~18的靶上設置金屬吸收層形成用靶材,在剩下兩個陰極19~20的靶上設置金屬層用靶材,由此能夠在長條狀樹脂膜F的單面連續地形成由金屬氧化物構成的金屬吸收層及金屬層。在該金屬吸收層形成時,如果使用金屬氧化物靶材作為金屬吸收層的形成用靶材,那麼成膜速度變慢,不適於量產。因此,使用能夠高速成膜的Ni系的金屬靶材(金屬材料),並且採用一邊控制含有氧氣的反應性氣體、一邊導入該反應性氣體的反應性濺鍍等反應成膜法。 Among the four magnetron sputtering cathodes 17 to 20, for example, a target for forming a metal absorption layer is provided on a target of the first two cathodes 17 to 18, and a metal is provided on a target of the remaining two cathodes 19 to 20. By using the target material for the layer, the metal absorption layer and the metal layer made of a metal oxide can be continuously formed on one surface of the elongated resin film F. When the metal absorbing layer is formed, if a metal oxide target is used as a target for forming a metal absorbing layer, the film forming speed is slow and it is not suitable for mass production. Therefore, a Ni-based metal target (metal material) capable of forming a film at a high speed is used, and a reaction film formation method such as reactive sputtering in which the reactive gas containing oxygen is controlled while introducing the reactive gas is used.

作為控制所述反應性氣體的方法,已知如下4種方法:(1)釋放固定流量的反應性氣體的方法,(2)以使真空室內的壓力保持為固定壓力的方式釋放反應性氣體的方法,(3)以濺鍍陰極的阻抗固定的方式釋放反應性氣體的(阻抗控制)方法,以及(4)以濺鍍的電漿強度固定的方式釋放反應性氣體的(電漿發射控制)方法。 As a method of controlling the reactive gas, there are known four methods: (1) a method of releasing a reactive gas having a fixed flow rate, and (2) releasing a reactive gas in such a manner that a pressure in a vacuum chamber is maintained at a fixed pressure. Method (3) releasing a reactive gas (impedance control) method in such a manner that the impedance of the sputtering cathode is fixed, and (4) releasing the reactive gas in a manner of fixing the strength of the sputtered plasma (plasma emission control) method.

在如上所述通過反應性濺鍍等而形成金屬吸收層時,形成濺鍍環境的反應性氣體為在氬氣等添加氧氣而形成的混合氣體。藉由如此地在含有氧氣的反應性氣體環境下使用Ni系的金屬靶材(金屬材料)進行反應性濺鍍,能夠形成NiO膜(並非完全氧化)等。反應性氣體中的適宜氧氣濃度會根據成膜裝置及金屬靶材(金屬材料)的種類而變化,只要將在金屬吸收層的反射率等光學特性及蝕刻液的蝕刻性考慮在內而適當設定即可,一般來講理想的是15體積%以下。 When the metal absorbing layer is formed by reactive sputtering or the like as described above, the reactive gas forming the sputtering environment is a mixed gas formed by adding oxygen to argon gas or the like. By performing reactive sputtering using a Ni-based metal target (metal material) in a reactive gas atmosphere containing oxygen, a NiO film (not completely oxidized) or the like can be formed. The appropriate oxygen concentration in the reactive gas varies depending on the type of the film forming apparatus and the metal target (metal material), and is appropriately set in consideration of the optical characteristics such as the reflectance of the metal absorbing layer and the etching property of the etching liquid. That is, generally, it is desirable to be 15% by volume or less.

在如上所述使用兩個濺鍍陰極17及18來形成從作為透明基板的長條狀樹脂膜F側數起位於第1層的金屬吸收層時,從兩對氣體釋放管25a.25b及26a.26b導入反應性氣體。另外,在長條狀樹脂膜F的兩面分別形成金屬吸收層及金屬層的情況下,只要以如下方式進行操作即可:如圖1所示使捲出輥11及捲取輥24沿著中空箭頭所示的逆時針方向旋轉而在長條狀樹脂膜F的一面進行成膜,並將該長條狀樹脂膜F捲取至捲取輥24,然後將該捲取而成的捲筒從捲取輥24拆下,並安裝至捲出輥11,使捲出輥11沿著圖1的實心箭頭所示的順時針方向旋轉,並且從捲出輥11朝向自由輥12a而如虛線所示捲出長條狀樹脂膜F,由此在另一面進行成膜。 When the two sputtering cathodes 17 and 18 are used as described above to form the metal absorbing layer located in the first layer from the side of the elongated resin film F as the transparent substrate, the gas is released from the two pairs of gas tubes 25a. 25b and 26a. 26b introduces a reactive gas. Further, when a metal absorbing layer and a metal layer are formed on both surfaces of the elongated resin film F, the operation may be performed as follows: as shown in FIG. 1, the take-up roll 11 and the take-up roll 24 are hollowed out as shown in FIG. The film is formed on one side of the elongated resin film F by rotating in the counterclockwise direction indicated by the arrow, and the elongated resin film F is taken up to the take-up roll 24, and then the wound roll is taken from The take-up roll 24 is detached and attached to the take-up roll 11 to rotate the take-up roll 11 in the clockwise direction as indicated by the solid arrow of Fig. 1, and from the take-up roll 11 toward the free roll 12a as indicated by a broken line The long resin film F is taken up, whereby film formation is performed on the other surface.

另外,在所述濺鍍成膜等乾式鍍敷中所使用的長條狀樹脂膜的表面,有時會形成易接著層以提高與鍍敷層的密合性。關於易接著層的形成方法,有通過塗佈矽烷化合物或異氰酸酯化合物等化合物而形成的化學形成法、或通過電暈放電等將表面的構成分子分解或將表面粗面化等而形成的機械形成法。如果在兩面設置著該易接著層的長條狀樹脂膜的一面先形成所述金屬吸收層及金屬層作為第1覆膜,然後再捲取長條狀樹脂膜,那麼會擔心第1覆膜與長條狀樹脂膜的另一未成膜側表面接觸,而使第1覆膜遭受該易接著層部分地轉印於第1覆膜等化學性影響。關於其過程,下文將進行詳細說明。 In addition, in the surface of the elongated resin film used for the dry plating such as the sputtering film formation, an easy-adhesion layer may be formed to improve the adhesion to the plating layer. The method for forming the easy-adhesion layer may be a chemical formation method in which a compound such as a decane compound or an isocyanate compound is applied, or a mechanical formation formed by decomposing constituent molecules of the surface by corona discharge or the like, or roughening the surface. law. If the metal absorbing layer and the metal layer are formed as the first coating film on one side of the long resin film on which the easy-to-adhere layer is provided on both sides, and then the long resin film is wound up, the first coating film may be worried. The first coating film is subjected to chemical influence such as partial transfer of the easy-adhesion layer to the first coating film, in contact with the other unformed side surface of the elongated resin film. The process will be described in detail below.

如果利用乾式鍍敷法在長條狀樹脂膜進行成膜,那麼其捲取也是在減壓環境下進行。因此,在捲取已形成第1覆膜的長條狀樹脂膜後,第1覆膜與長條狀樹脂膜的未成膜的表面之間幾乎不存在氣體分子地接觸。進而,已被捲取的長條狀樹脂膜以自身被捲取時的搬送張力而捲緊。 該情況下的搬送張力在長條狀樹脂膜的寬度方向上存在差異,寬度方向的兩端部的張力最弱,寬度方向的中央部最強。即,如果在成膜裝置內捲取僅形成有第1覆膜的長條狀樹脂膜,那麼第1覆膜的金屬面與易接著層相接的部分的接觸狀態根據長條狀樹脂膜的寬度方向的位置而不同,因此有時會如圖2所示在寬度方向上發現色差。另外,在形成第2覆膜後的捲取中,第2覆膜與第1覆膜相接,因此不會發生所述寬度方向的色差問題。 If the film is formed on the long resin film by the dry plating method, the winding is also performed under a reduced pressure environment. Therefore, after the long resin film in which the first coating film has been formed is wound up, there is almost no gas molecule contact between the first coating film and the unformed surface of the elongated resin film. Further, the elongated resin film that has been wound up is wound up by the conveyance tension when it is wound up. In this case, the conveyance tension differs in the width direction of the elongated resin film, the tension at both end portions in the width direction is the weakest, and the center portion in the width direction is the strongest. In other words, when the elongated resin film in which only the first coating film is formed is wound up in the film forming apparatus, the contact state of the metal surface of the first coating film and the portion in contact with the easily-adhesive layer is in accordance with the elongated resin film. Since the position in the width direction is different, chromatic aberration is sometimes found in the width direction as shown in FIG. 2. Further, in the winding after the formation of the second coating, since the second coating is in contact with the first coating, the problem of chromatic aberration in the width direction does not occur.

如果在第1覆膜的表面發現所述寬度方向的色差,那麼會擔心在利用氧化劑等化學液對第1覆膜實施化學蝕刻等加工時加工性產生差別。因此,在圖1的成膜裝置中,能夠在將形成有第2覆膜之後的長條狀樹脂膜F捲取之前,利用乾式蝕刻手段29對第1覆膜的表面進行乾式蝕刻處理。另外,雖然在圖1的成膜裝置中是先對第1覆膜進行乾式蝕刻處理,然後再進行第2覆膜的成膜,但也可先形成第2覆膜,然後再對第1覆膜進行乾式蝕刻處理。 When the chromatic aberration in the width direction is observed on the surface of the first film, there is a concern that the workability is different when the first film is subjected to chemical etching or the like by a chemical liquid such as an oxidizing agent. Therefore, in the film forming apparatus of FIG. 1, the surface of the first film can be subjected to dry etching treatment by the dry etching means 29 before the long resin film F after the second film is formed is wound up. Further, in the film forming apparatus of Fig. 1, the first coating film is subjected to dry etching treatment, and then the second coating film is formed. However, the second coating film may be formed first, and then the first coating may be performed. The film is subjected to a dry etching process.

藉由如上所述對第1覆膜進行乾式蝕刻處理,能夠將該第1覆膜的產生寬度方向的色差的表面部去除。由此,長條狀樹脂膜的寬度方向的蝕刻性不會產生差別。作為乾式蝕刻處理,可舉出使氬離子等撞擊第1覆膜的表面而進行的反濺鍍處理、電漿照射處理、離子束照射處理等。在這些處理之中,離子束照射處理由於指向性強,所以能夠高效地進行乾式蝕刻處理,因此較為理想。另外,只要將第1覆膜的產生寬度方向的色差的表面部去除,那麼即使是在第1覆膜的表面進而利用乾式鍍敷或濕式鍍敷形成覆膜的情況下,長條狀樹脂膜的寬度方向上也不易產生蝕刻性的差別,也可根據需要對設置於第1覆膜之上的覆膜實施乾式蝕刻處理。 By performing the dry etching process on the first film as described above, it is possible to remove the surface portion of the first film which causes chromatic aberration in the width direction. Thereby, the etching property in the width direction of the elongated resin film does not differ. Examples of the dry etching treatment include a reverse sputtering treatment, a plasma irradiation treatment, an ion beam irradiation treatment, and the like which are performed by causing argon ions or the like to hit the surface of the first coating film. Among these processes, since the ion beam irradiation treatment is strong in directivity, it is preferable to perform dry etching treatment efficiently. In addition, when the surface portion of the chromatic aberration in the width direction of the first film is removed, even when the film is formed by dry plating or wet plating on the surface of the first film, the elongated resin is used. The difference in etching property is less likely to occur in the width direction of the film, and the film provided on the first film may be subjected to dry etching treatment as needed.

離子束處理是藉由從離子源對作為被處理物的長條狀樹脂膜照射離子而進行。作為用於離子束的氣體種類,可使用氧氣、氬氣、氮氣、二氧化碳、或水蒸氣,也可使用由兩種以上所述氣體的混合氣體。優選以大致呈直線狀照射離子束,且受到照射的有效寬度相當於接受處理的長條狀樹脂膜的寬度的方式,設置乾式蝕刻手段29。另外,離子束的照射時間取決於長條狀樹脂膜的搬送速度。向進行離子束處理的離子源供給的電力[W]會受成膜裝置的構造及第1覆膜的化學種類等所影響,因此只要將第1覆膜的加工性等考慮在內而適當設定即可。此時,優選基於由下述數學式1所定義的照射電力[W/(m.m/min)]來設定離子源的供給電力。 The ion beam treatment is performed by irradiating ions from the ion source to the elongated resin film as the object to be processed. As the kind of gas used for the ion beam, oxygen gas, argon gas, nitrogen gas, carbon dioxide gas, or water vapor may be used, or a mixed gas of two or more of the gases may be used. The dry etching means 29 is preferably provided so that the ion beam is irradiated in a substantially linear shape and the effective width of the irradiation is equal to the width of the elongated resin film to be treated. Further, the irradiation time of the ion beam depends on the transport speed of the elongated resin film. The electric power [W] supplied to the ion source for the ion beam treatment is affected by the structure of the film formation apparatus and the chemical type of the first coating film. Therefore, the processing property of the first coating film and the like are appropriately set. Just fine. At this time, it is preferable to set the supply electric power of the ion source based on the irradiation electric power [W/(m.m/min)] defined by the following mathematical expression 1.

[數學式1]照射電力=離子源的供給電力[W]/(有效寬度[m]×搬送速度[m/min]) [Math 1] Irradiation power = Supply power of ion source [W] / (effective width [m] × transport speed [m/min])

在對形成於長條狀樹脂膜F的第1覆膜的表面進行離子束處理時,理想的是使其相反側部分與冷卻輥13的外周面接觸而進行冷卻。其原因在於:離子束處理的指向性高,擔心長條狀樹脂膜F的離子束照射部會局部溫度變高而產生皺褶。另外,在離子束處理過度或冷卻輥13所進行的冷卻不充分的情況下也容易產生皺褶,因此理想的是適當調整離子束的供給電力及冷媒的溫度等。 When the surface of the first coating formed on the elongated resin film F is subjected to ion beam treatment, it is preferable that the opposite side portion is brought into contact with the outer peripheral surface of the cooling roll 13 to be cooled. The reason for this is that the directivity of the ion beam treatment is high, and there is concern that the ion beam irradiation portion of the elongated resin film F has a high local temperature and wrinkles. In addition, when the ion beam treatment is excessive or the cooling by the cooling roll 13 is insufficient, wrinkles are likely to occur. Therefore, it is preferable to appropriately adjust the supply power of the ion beam, the temperature of the refrigerant, and the like.

利用所述成膜裝置,能夠在製作觸控面板用等的電極基板膜的基材所用的積層構造的積層體基板時,抑制品質的不均。該積層體基板例如由如下材料所構成:如圖3所示的由長條狀樹脂膜構成的透明基板50;及,金屬吸收層51及金屬層52,該等藉由所述成膜裝置而形成於該透明基板50的兩面。 By using the film forming apparatus, it is possible to suppress unevenness in quality when producing a laminated body substrate having a laminated structure for a base material of an electrode substrate film for a touch panel or the like. The laminated body substrate is made of, for example, a transparent substrate 50 made of a long resin film as shown in FIG. 3, and a metal absorbing layer 51 and a metal layer 52, which are formed by the film forming apparatus. Formed on both sides of the transparent substrate 50.

作為應用於所述積層體基板的長條狀樹脂膜的材質,並不特別限定,適宜使用選自聚對苯二甲酸乙二酯(PET)、聚醚碸(PES)、聚芳酯(PAR)、聚碳酸酯(PC)、聚烯烴(PO)、三乙醯纖維素(TAC)及降莰烯等樹脂材料的樹脂膜單質、或者選自所述樹脂材料的樹脂膜單質與覆蓋該單質的單面或兩面的丙烯酸系有機膜的複合體。關於降莰烯樹脂材料,作為代表性的材料可舉出日本瑞翁公司的ZEONOR(商品名)及JSR公司的ARTON(商品名)等。另外,使用本發明的積層體基板而製作的電極基板膜主要用於觸控面板,因此在所述樹脂膜之中,理想的是在可見波長區域透明性優異的樹脂膜。 The material of the elongated resin film to be applied to the laminate substrate is not particularly limited, and is preferably selected from the group consisting of polyethylene terephthalate (PET), polyether oxime (PES), and polyarylate (PAR). a resin film of a resin material such as polycarbonate (PC), polyolefin (PO), triacetyl cellulose (TAC) or norbornene, or a resin film selected from the resin material, and covering the elemental substance A composite of a single-sided or two-sided acrylic organic film. As a typical material of the norbornene resin material, ZEONOR (trade name) of Japan's Rayon Co., Ltd., and ARTON (trade name) of JSR Corporation, etc. are mentioned. In addition, the electrode substrate film produced by using the laminate substrate of the present invention is mainly used for a touch panel. Therefore, among the resin films, a resin film excellent in transparency in a visible wavelength region is preferable.

所述金屬吸收層51優選為由金屬氧化物層構成的層,該金屬氧化物層係使用由Cu單質、Ni單質、或Ni系合金構成的金屬材料在含有氧氣的反應性氣體環境下利用反應成膜法進行成膜而獲得;其中,所述Ni系合金是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu及Zn所組成的群中1種以上元素而形成。Ni系合金的情況下優選Ni-Cu合金。 The metal absorbing layer 51 is preferably a layer composed of a metal oxide layer using a metal material composed of a simple substance of Cu, a simple substance of Ni, or a Ni-based alloy in a reactive gas atmosphere containing oxygen. The film forming method is obtained by forming a film; wherein the Ni-based alloy is added to a group selected from the group consisting of Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, Cu, and Zn. Formed from the above elements. In the case of a Ni-based alloy, a Ni-Cu alloy is preferred.

另一方面,金屬層52能夠在一般的惰性氣體環境下形成,作為其構成材料,只要是電阻值低的金屬,並沒有特別限定,例如,可舉出Cu單質、或在Cu中添加選自Ti、Al、V、W、Ta、Si、Cr、Ag的1種以上元素而形成的Cu系合金、或者Ag單質、或在Ag中添加選自Ti、Al、V、W、Ta、Si、Cr、Cu的1種以上元素而形成的Ag系合金,在這些材料之中,從電路圖案的加工性及電阻值的觀點來講,理想的是Cu單質。 On the other hand, the metal layer 52 can be formed in a general inert gas atmosphere, and the constituent material thereof is not particularly limited as long as it is a metal having a low electric resistance value. For example, Cu may be added as a simple substance or added to Cu. a Cu-based alloy formed of one or more elements of Ti, Al, V, W, Ta, Si, Cr, or Ag, or a simple substance of Ag, or added to Ag, selected from the group consisting of Ti, Al, V, W, Ta, Si, Among these materials, an Ag-based alloy formed of one or more elements of Cr and Cu is preferably a simple substance of Cu from the viewpoint of workability of a circuit pattern and a resistance value.

金屬吸收層51的膜厚優選15~30nm左右。金屬層的膜厚 會對電特性造成影響,因此並非僅根據光學要件而決定,優選設定為透過光無法測定的水準的膜厚。一般來講,優選將金屬層的膜厚設定為50~5000nm,從將金屬層加工成配線圖案的加工性的觀點來講,更優選3μm(3000nm)以下。 The film thickness of the metal absorbing layer 51 is preferably about 15 to 30 nm. Film thickness of the metal layer Since it affects electrical characteristics, it is not determined only by optical requirements, but it is preferable to set the film thickness of the level which cannot be measured by transmitted light. In general, the film thickness of the metal layer is preferably 50 to 5000 nm, and more preferably 3 μm (3000 nm) or less from the viewpoint of processing the metal layer into a wiring pattern.

另外,也可在利用所述乾式鍍敷法而形成的金屬層52之上進而利用電鍍法等濕式鍍敷法形成金屬層,而進行厚膜化。即,也可如圖4所示,利用乾式鍍敷法在由長條狀樹脂膜構成的透明基板50的兩面形成金屬吸收層51及金屬層52之後,在該金屬層52之上利用濕式鍍敷法形成金屬層53。 Further, a metal layer may be formed on the metal layer 52 formed by the dry plating method by a wet plating method such as a plating method to form a thick film. In other words, as shown in FIG. 4, after the metal absorbing layer 51 and the metal layer 52 are formed on both surfaces of the transparent substrate 50 made of a long resin film by a dry plating method, the wet layer may be used on the metal layer 52. A metal layer 53 is formed by plating.

也可在所述金屬層53之上進而形成第2金屬吸收層。即,也可如圖5所示,利用乾式鍍敷法在由長條狀樹脂膜構成的透明基板50的兩面形成例如膜厚為15~30nm的金屬吸收層51及例如膜厚為50~1000nm的金屬層52之後,利用濕式鍍敷法形成金屬層53,然後在該金屬層53之上利用乾式鍍敷法形成例如膜厚為15~30nm的第2金屬吸收層54。該第2金屬吸收層與所述金屬吸收層51相同,是藉由使用由Cu單質、Ni單質、或Ni系合金構成的金屬材料在含有氧氣的反應性氣體環境下利用反應成膜法進行成膜而獲得,所述Ni系合金是在Ni中添加選自Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu、Zn的1種以上元素而形成。 A second metal absorbing layer may be further formed on the metal layer 53. In other words, as shown in FIG. 5, for example, a metal absorbing layer 51 having a film thickness of 15 to 30 nm and a film thickness of 50 to 1000 nm may be formed on both surfaces of a transparent substrate 50 made of a long resin film by dry plating. After the metal layer 52, the metal layer 53 is formed by wet plating, and then the second metal absorbing layer 54 having a film thickness of 15 to 30 nm is formed on the metal layer 53 by dry plating. Similarly to the metal absorbing layer 51, the second metal absorbing layer is formed by a reaction film forming method using a metal material composed of a simple substance of Cu, a simple substance of Ni, or a Ni-based alloy in a reactive gas atmosphere containing oxygen. The Ni-based alloy is formed by adding one or more elements selected from the group consisting of Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, Cu, and Zn to Ni.

通過如此地在利用乾式鍍敷法及濕式鍍敷法而厚膜化後的金屬層的兩面形成金屬吸收層,能夠在將使用該積層體基板而製作的電極基板膜組裝至觸控面板時不易通過反射看見由金屬製積層細線構成的網眼構造的電路圖案。另外,即使是於使用僅在由長條狀樹脂膜構成的透明基 板的單面形成金屬吸收層及金屬層而獲得的積層體基板,來製作電極基板膜的情況下,也能夠不易從該透明基板看見電路圖案。 When the metal absorbing layer is formed on both surfaces of the metal layer which is thickened by the dry plating method and the wet plating method, the electrode substrate film produced by using the laminated body substrate can be assembled to the touch panel. It is difficult to see the circuit pattern of the mesh structure composed of the metal laminated thin wires by reflection. In addition, even if a transparent base composed only of a long resin film is used When a laminate substrate obtained by forming a metal absorbing layer and a metal layer on one side of a sheet is used to form an electrode substrate film, it is also difficult to see a circuit pattern from the transparent substrate.

另外,如果構成利用反應成膜法而成膜的金屬吸收層的金屬氧化物過度氧化,那麼金屬吸收層會變為透明,因此理想的是將氧化水準抑制在視覺上成為黑化膜的程度。如果利用反應成膜法形成金屬吸收層,那麼各金屬元素會與氧原子形成非化學計量的化合物,藉由這種非化學計量的氧化物,而在視覺上呈現為黑色。 Further, when the metal oxide constituting the metal absorbing layer formed by the reaction film formation method is excessively oxidized, the metal absorbing layer becomes transparent. Therefore, it is preferable to suppress the oxidized level to a degree that visually becomes a blackened film. If a metal absorbing layer is formed by a reactive film formation method, each metal element forms a non-stoichiometric compound with an oxygen atom, and this non-stoichiometric oxide is visually black.

作為所述反應成膜法,除了使用如圖1所示的磁控濺鍍陰極17~20的濺鍍法以外,還有離子束濺鍍、真空蒸鍍、離子鍍覆、CVD等乾式鍍敷法。金屬吸收層在各波長下的光學常數(折射率、消光係數)較大程度上受反應的程度即氧化度所影響,而並非僅由Ni系合金構成的金屬材料所決定。另外,在為Ni-Cu合金的情況下,根據Ni與Cu的調配比率,有時即使是不使用反應成膜法的方法(即不使用反應性氣體的成膜法),也會形成被視認為黑色膜的金屬吸收層。 As the reaction film formation method, in addition to the sputtering method using the magnetron sputtering cathodes 17 to 20 as shown in Fig. 1, there are dry plating such as ion beam sputtering, vacuum evaporation, ion plating, and CVD. law. The optical constant (refractive index, extinction coefficient) of the metal absorbing layer at each wavelength is largely affected by the degree of oxidation, that is, the degree of oxidation, and is not determined only by the metal material composed of the Ni-based alloy. Further, in the case of a Ni-Cu alloy, depending on the mixing ratio of Ni and Cu, a method of not using a reaction film forming method (that is, a film forming method without using a reactive gas) may be formed. The metal absorbing layer of the black film is considered.

藉由對利用所述方法而製作的積層體基板的積層膜進行圖案化加工而形成線寬為例如20μm以下的金屬製積層細線,能夠獲得電極基板膜。具體來講,藉由下述蝕刻處理等對圖5所示的積層體膜的積層膜進行圖案化加工,由此能夠獲得如圖6所示的電極基板膜。該圖6所示的電極基板膜具有網眼構造的電路圖案,所述電路圖案設置於由樹脂膜構成的透明基板50的兩面,且由例如線寬為20μm以下的金屬製積層細線構成,該金屬製積層細線由從透明基板50側數起為第1層的金屬吸收層51a、為第2層的金屬層52a、53a及為第3層的第2金屬吸收層54a所構成。 By forming a laminated film of the laminated body substrate produced by the above method to form a metal laminated thin wire having a line width of, for example, 20 μm or less, an electrode substrate film can be obtained. Specifically, the laminated film of the laminated body film shown in FIG. 5 is patterned by the following etching treatment or the like, whereby an electrode substrate film as shown in FIG. 6 can be obtained. The electrode substrate film shown in FIG. 6 has a circuit pattern of a mesh structure, and the circuit pattern is provided on both surfaces of a transparent substrate 50 made of a resin film, and is formed of, for example, a metal laminated thin wire having a line width of 20 μm or less. The metal laminated thin wires are composed of a metal absorbing layer 51a which is a first layer from the side of the transparent substrate 50, metal layers 52a and 53a which are second layers, and a second metal absorbing layer 54a which is a third layer.

藉由如此地將電極基板膜的電極(配線)圖案形成為條紋狀或格子狀,能夠將其用於觸控面板。被以此方式配線加工為電極(配線)圖案的金屬製積層細線由於維持著積層體基板的積層構造,所以具有即使是在高亮度照明下也極難視認設置於透明基板的電極等的電路圖案的特徵。即,如果在氬氣中添加氧氣而獲得的反應性氣體環境下進行反應性濺鍍成膜,那麼由於會獲得作為金屬吸收層之黑色膜,所以在被照射時能夠將光的反射率抑制得較低,由此,對金屬吸收層進行蝕刻加工而獲得的電極等的電路圖案在高亮度照明下不易被視認。 By forming the electrode (wiring) pattern of the electrode substrate film in a stripe shape or a lattice shape as described above, it can be used for a touch panel. Since the metal laminated thin wires which are wire-formed into the electrode (wiring) pattern in this manner maintain the laminated structure of the laminated substrate, the circuit pattern of the electrode or the like which is extremely difficult to visually recognize the transparent substrate even under high-intensity illumination is provided. Characteristics. In other words, when reactive sputtering is performed in a reactive gas atmosphere obtained by adding oxygen to argon gas, a black film as a metal absorbing layer is obtained, so that the reflectance of light can be suppressed when irradiated. The circuit pattern of the electrode or the like obtained by etching the metal absorption layer is not easily recognized by high-intensity illumination.

作為對所述積層體基板進行圖案化加工而形成電極基板膜的方法,可舉出眾所周知的減成法。減成法是如下方法:在積層體基板的積層膜表面形成光阻膜,對於欲形成電極圖案的部位以保留光阻膜的方式進行曝光及顯影處理,藉由化學蝕刻將從光阻劑膜露出的積層膜部分去除,而形成電極圖案。作為所述化學蝕刻的蝕刻液,可使用氯化鐵水溶液或氯化銅水溶液。 As a method of forming the electrode substrate film by patterning the laminated body substrate, a well-known subtractive method can be mentioned. The subtractive method is a method in which a photoresist film is formed on the surface of the laminated film of the laminated body substrate, and a portion where the electrode pattern is to be formed is exposed and developed in such a manner as to retain the photoresist film, and the photoresist film is removed by chemical etching. The exposed laminated film is partially removed to form an electrode pattern. As the etching liquid for the chemical etching, an aqueous solution of ferric chloride or an aqueous solution of copper chloride can be used.

以上,對本發明的一具體例的電極基板膜用積層體基板的製造方法進行了說明,積層體基板的用途並不限定於觸控面板用電極基板膜,也可用於軟性配線基板等。在將積層體基板用於軟性配線基板的情況下,積層體基板是第1覆膜及第2覆膜各自為至少兩層的積層構造,例如優選第1層是Ni系合金層,且第2層由以銅層形成的金屬層所構成,所述Ni系合金層是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu及Zn所組成的群中1種以上元素而形成。 In the above, the method for producing the laminated substrate for an electrode substrate film according to a specific example of the present invention has been described. The use of the laminated substrate is not limited to the electrode substrate film for a touch panel, and can be used for a flexible wiring substrate or the like. When the laminated substrate is used for a flexible wiring board, the laminated substrate is a laminated structure in which each of the first coating and the second coating is at least two layers. For example, the first layer is preferably a Ni-based alloy layer, and the second layer is preferably second. The layer is composed of a metal layer formed of a copper layer added with a group selected from the group consisting of Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, Cu, and Zn. It is formed by one or more elements.

也可在該第2層的金屬層之上進而設置著第3層,該第3 層優選由第2 Ni系合金層構成,所述第2 Ni系合金層例如是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu、及Zn所組成的群的1種以上元素而形成。這些第1及第2 Ni合金層理想的是Ni-Cr系合金,其膜厚適宜為3~50nm。另外,銅層的膜厚優選50nm以上,更優選15μm以下。作為長條狀樹脂膜,除了電極基板膜用積層體膜中所使用的“構成透明基板的樹脂膜”以外,在不要求透明性的情況下也可使用經著色的膜。例如,可使用聚醯亞胺膜等樹脂膜。 A third layer may be further disposed on the metal layer of the second layer, and the third layer Preferably, the layer is composed of a second Ni-based alloy layer, and the second Ni-based alloy layer is added, for example, from Ni, selected from the group consisting of Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, Cu, and Zn. One or more elements of the group are formed. These first and second Ni alloy layers are preferably Ni-Cr alloys, and the film thickness thereof is preferably 3 to 50 nm. Further, the film thickness of the copper layer is preferably 50 nm or more, and more preferably 15 μm or less. In addition to the "resin film constituting the transparent substrate" used in the laminated body film for an electrode substrate film, a colored film can be used as long as it does not require transparency. For example, a resin film such as a polyimide film can be used.

[實施例] [Examples]

使用如圖1所示的成膜裝置(濺鍍捲繞鍍膜機),在含有氧氣的反應性氣體環境下進行反應濺鍍,由此在長條狀樹脂膜F的兩面分別形成第1覆膜及第2覆膜。具體地進行說明,罐狀輥16使用外徑為600mm、寬度為750mm的不銹鋼製圓筒構件,並對其表面實施硬鉻鍍敷。前進料輥15與後進料輥21均使用外徑為150mm、寬度為750mm的不銹鋼製圓筒構件,並對其表面實施硬鉻鍍敷。在磁控濺鍍陰極17、18安裝金屬吸收層用Ni-Cu靶材,在磁控濺鍍陰極19、20安裝金屬層用Cu靶材。 The first film is formed on both surfaces of the elongated resin film F by performing a reaction sputtering using a film forming apparatus (sputter coating coater) as shown in FIG. 1 in a reactive gas atmosphere containing oxygen. And the second film. Specifically, the can roller 16 is a stainless steel cylindrical member having an outer diameter of 600 mm and a width of 750 mm, and the surface thereof is subjected to hard chrome plating. Both the forward feed roller 15 and the rear feed roller 21 were made of a stainless steel cylindrical member having an outer diameter of 150 mm and a width of 750 mm, and the surface thereof was subjected to hard chrome plating. A Ni-Cu target for the metal absorbing layer is mounted on the magnetron sputtering cathodes 17, 18, and a Cu target for the metal layer is mounted on the magnetron sputtering cathodes 19, 20.

構成透明基板的長條狀樹脂膜F使用寬度為600mm、長度為1200m的PET膜。將該長條狀樹脂膜F設置於捲出輥11,並將其前端部經過各種輥群而捲繞於捲取輥24。在罐狀輥16內循環的冷媒的溫度控制為0℃。在該狀態下,通過多台乾式泵將真空室10內排氣至5Pa,然後再使用多台渦輪分子泵及低溫盤管排氣至1×10-4Pa。然後,以2m/min的搬送速度搬送長條狀樹脂膜F而進行濺鍍成膜。 A PET film having a width of 600 mm and a length of 1200 m was used as the elongated resin film F constituting the transparent substrate. The elongated resin film F is placed on the take-up roll 11 and its leading end portion is wound around the take-up roll 24 through various roll groups. The temperature of the refrigerant circulated in the can roller 16 was controlled to 0 °C. In this state, the inside of the vacuum chamber 10 was evacuated to 5 Pa by a plurality of dry pumps, and then exhausted to 1 × 10 -4 Pa using a plurality of turbo molecular pumps and a low temperature coil. Then, the elongated resin film F was conveyed at a conveyance speed of 2 m/min, and sputtering was performed to form a film.

濺鍍成膜時,在進行金屬吸收層的成膜的磁控濺鍍陰極 17、18中,從分別配設於其附近的氣體釋放管25a.25b、26a.26b以300sccm的流量導入氬氣,以15sccm的流量導入氧氣,並以可獲得膜厚為30nm的Ni-Cu氧化層的方式進行電力控制。另一方面,在進行金屬層(銅層)的成膜的磁控濺鍍陰極19、20中,從分別配設於其附近的氣體釋放管27a.27b、28a.28b以300sccm的流量導入氬氣,並以可獲得膜厚為80nm的Cu層的方式進行電力控制。 Magnetron sputtering cathode for film formation of a metal absorbing layer during sputtering film formation 17, 18, from the gas release tube 25a respectively disposed in the vicinity thereof. 25b, 26a. 26b was introduced with argon gas at a flow rate of 300 sccm, oxygen gas was introduced at a flow rate of 15 sccm, and electric power control was performed so that a Ni-Cu oxide layer having a film thickness of 30 nm was obtained. On the other hand, in the magnetron sputtering cathodes 19, 20 for film formation of the metal layer (copper layer), the gas release tubes 27a are respectively disposed in the vicinity thereof. 27b, 28a. 28b was introduced with argon gas at a flow rate of 300 sccm, and electric power control was performed so that a Cu layer having a film thickness of 80 nm was obtained.

在長條狀樹脂膜F的單面完成第1覆膜的成膜之後,向真空室10導入大氣,將已被捲取的長條狀樹脂膜從捲取輥24拆下並設置於捲出輥11。然後,在利用與第1覆膜的成膜的情況相同的方法進行真空排氣之後,以2m/min的搬送速度搬送長條狀樹脂膜F,除了進行下述離子束處理以外按照與所述第1覆膜的成膜的情況相同的步驟進行第2覆膜的成膜。 After the film formation of the first film is completed on one surface of the elongated resin film F, the atmosphere is introduced into the vacuum chamber 10, and the elongated resin film that has been taken up is detached from the take-up roll 24 and placed on the roll-out. Roller 11. Then, after the vacuum evacuation is performed by the same method as the film formation of the first film, the elongated resin film F is conveyed at a transport speed of 2 m/min, and the following is performed in addition to the ion beam treatment described below. In the same procedure as in the case of film formation of the first film, film formation of the second film is performed.

即,在該第2覆膜的成膜中,與所述第1覆膜的成膜的情況不同,一邊利用循環著溫度被控制為0℃的冷媒的冷卻輥13對長條狀樹脂膜F進行冷卻,一邊啟動作為乾式蝕刻手段29的離子源,以100sccm的離子束用氣體供給量對第1覆膜的成膜面側實施離子束處理。另外,為了調查改變了乾式蝕刻處理條件時的效果,每隔固定時間便改變對離子源的供給電力及離子束用供給氣體的種類而進行離子束處理。另外,為了進行比較,在停止離子源並且不供給離子束用供給氣體的條件下進行第2覆膜的成膜。 In the film formation of the second film, the cooling film 13 of the refrigerant whose temperature is controlled to 0° C. is used to form the elongated resin film F, unlike the case of the film formation of the first film. The ion source as the dry etching means 29 was started while cooling, and the ion beam treatment was performed on the film formation side of the first film with a gas supply amount of 100 sccm. In addition, in order to investigate the effect when the dry etching treatment conditions are changed, the ion beam treatment is performed by changing the supply power to the ion source and the type of the ion beam supply gas every fixed time. Further, for comparison, the film formation of the second film is performed under the condition that the ion source is stopped and the ion beam supply gas is not supplied.

在第2覆膜的成膜完成後,在大氣中將已被捲取的積層體基板捲出,通過目視確認第1覆膜的寬度方向的兩端的色差。其次,對於第1覆膜及第2覆膜兩者通過電鍍以銅厚成為1μm的方式進行成膜,再次通 過成膜裝置,利用與所述相同的方法,在第1覆膜及第2覆膜之上形成膜厚為30nm的第2金屬吸收層。另外,在該第2金屬吸收層的成膜時未進行離子束處理。以此方式,製造出在透明基板的兩面積層下述積層膜而形成的試樣1~7的積層體基板,所述積層膜包含從該透明基板數起為第1層的作為金屬吸收層的Ni-Cu氧化膜、為第2層的作為金屬層的Cu膜及為第3層的作為第2金屬吸收層的Ni-Cu氧化膜。 After the film formation of the second film is completed, the laminated body substrate that has been wound up is taken up in the air, and the chromatic aberration at both ends in the width direction of the first film is visually confirmed. Then, both the first coating film and the second coating film are formed by plating so that the copper thickness becomes 1 μm, and the film is re-passed. In the film forming apparatus, a second metal absorbing layer having a film thickness of 30 nm was formed on the first film and the second film by the same method as described above. Further, ion beam treatment was not performed at the time of film formation of the second metal absorption layer. In this manner, a laminate substrate of Samples 1 to 7 which is formed by laminating a film of a two-layer layer of a transparent substrate, which is a metal absorbing layer which is the first layer from the number of the transparent substrates, is produced. The Ni-Cu oxide film is a Cu film as a metal layer of the second layer and a Ni-Cu oxide film as a second metal absorbing layer of the third layer.

對於所獲得的試樣1~7的各積層體基板,在開始成膜後對100m、500m及900m的位置進行取樣,使用氯化鐵水溶液作為蝕刻液而進行蝕刻,由此進行蝕刻性的評價。作為評價基準,如果寬度方向的中央部與距離端部50mm的部分的蝕刻速度差未達3秒,那麼判斷為“合格”,如果該速度差為3秒以上,那麼判斷為“不合格”。另外,通過目視確認有無產生皺褶。將這些評價結果與所述通過目視而得出的色差的評價及使用數學式1由離子源的供給電力和該值而算出的照射電力一起示於下述表1。 The laminated substrates of the obtained samples 1 to 7 were sampled at positions of 100 m, 500 m, and 900 m after the film formation was started, and etching was performed using an aqueous solution of ferric chloride as an etching solution to evaluate the etching property. . As a criterion for evaluation, if the difference in etching speed between the central portion in the width direction and the portion at 50 mm from the end portion is less than 3 seconds, it is judged as "pass", and if the speed difference is 3 seconds or more, it is judged as "fail". In addition, it was visually confirmed whether or not wrinkles were generated. These evaluation results are shown in Table 1 below together with the evaluation of the color difference obtained by the above-described visual observation and the electric power supplied from the ion source using the mathematical expression 1 and the electric power calculated by the value.

根據所述表1,可知:在對第1覆膜的成膜面側實施了離子 束處理的試樣1~6中,均不具有色差,另外,蝕刻性也良好。與此相對地,在未實施離子束處理的試樣7中,雖然與試樣1~6一樣未發現皺褶的產生,但在第1覆膜的兩端部發現了色差。另外,在蝕刻性的評價中,試樣7的所有樣本均不合格。 According to the above Table 1, it was found that ions were applied to the film formation surface side of the first coating film. In the bundled samples 1 to 6, none of them had chromatic aberration, and the etching property was also good. On the other hand, in the sample 7 which was not subjected to the ion beam treatment, the occurrence of wrinkles was not observed as in the samples 1 to 6, but chromatic aberration was observed at both end portions of the first film. In addition, in the evaluation of the etching property, all the samples of the sample 7 were unacceptable.

F‧‧‧長條狀樹脂膜 F‧‧‧Long strip resin film

10‧‧‧真空室 10‧‧‧vacuum room

10a‧‧‧間隔板 10a‧‧‧ Spacer

11‧‧‧捲出輥 11‧‧‧Rolling roll

12a、12b、23‧‧‧自由輥 12a, 12b, 23‧‧‧ free rolls

13‧‧‧冷卻輥 13‧‧‧Cooling roller

14、22‧‧‧張力傳感輥 14, 22‧‧‧ Tension sensing roller

15‧‧‧前進料輥 15‧‧‧Advance roll

16‧‧‧罐狀輥 16‧‧‧canned rolls

17、18、19、20‧‧‧磁控濺鍍陰極 17, 18, 19, 20‧ ‧ magnetically controlled sputtering cathode

21‧‧‧後進料輥 21‧‧‧Back feed roller

24‧‧‧捲取輥 24‧‧‧Winding roller

25a、25b、26a、26b、27a、27b、28a、28b‧‧‧氣體釋放管 25a, 25b, 26a, 26b, 27a, 27b, 28a, 28b‧‧‧ gas release tube

29‧‧‧乾式蝕刻手段 29‧‧‧dry etching

Claims (10)

一種成膜方法,利用乾式鍍敷法在以輥對輥方式搬送的長條狀樹脂膜的兩面分別形成第1覆膜及第2覆膜,其特徵在於:在第1次捲取與第2次捲取之間對上述第1覆膜的表面實施乾式蝕刻處理,上述第1次捲取是於將上述第1覆膜形成在上述長條狀樹脂膜的一面之後,上述第2次捲取是於將第2覆膜形成在已形成上述第1覆膜的長條狀樹脂膜的另一面之後。 In a film forming method, a first coating film and a second coating film are respectively formed on both surfaces of a long resin film which is conveyed by a roll-to-roll method by a dry plating method, and are characterized in that the first winding and the second coating are performed. The surface of the first film is subjected to a dry etching process between the second winding, and the first winding is performed after the first film is formed on one surface of the elongated resin film, and the second winding is performed. The second coating film is formed on the other surface of the elongated resin film on which the first coating film has been formed. 如申請專利範圍第1項的成膜方法,其中,上述乾式蝕刻處理是離子束照射。 The film forming method of claim 1, wherein the dry etching treatment is ion beam irradiation. 如申請專利範圍第1或2項的成膜方法,其中,在實施上述乾式蝕刻處理時,使其相反側部分與冷卻輥接觸。 The film forming method according to claim 1 or 2, wherein, when the dry etching treatment is performed, the opposite side portion is brought into contact with the cooling roll. 如申請專利範圍第1或2項的成膜方法,其中,上述乾式鍍敷法是濺鍍法。 The film forming method according to claim 1 or 2, wherein the dry plating method is a sputtering method. 如申請專利範圍第3項的成膜方法,其中,上述乾式鍍敷法是濺鍍法。 The film forming method of claim 3, wherein the dry plating method is a sputtering method. 一種積層體基板的製造方法,係在長條狀樹脂膜的兩面分別形成第1覆膜及第2覆膜,其特徵在於:上述第1覆膜及第2覆膜各自具有至少兩層的積層構造,利用申請專利範圍第1至5項中任一項的成膜方法而形成該等第1覆膜及第2覆膜。 In the method for producing a laminate substrate, the first coating film and the second coating film are formed on both surfaces of the elongated resin film, respectively, wherein the first coating film and the second coating film each have a laminate of at least two layers. The first coating film and the second coating film are formed by the film forming method according to any one of claims 1 to 5. 如申請專利範圍第6項的積層體基板的製造方法,其中,上述積層構造如下:從長條狀樹脂膜數起,第1層是Ni系合金層,第2層是銅層,上述Ni系合金層是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、 Ag、Mo、Cu及Zn所組成的群中1種以上元素而成者。 The method for producing a laminated substrate according to the sixth aspect of the invention, wherein the laminated structure is such that the first layer is a Ni-based alloy layer and the second layer is a copper layer, and the Ni-based system is the number of the elongated resin film. The alloy layer is added to Ni from the group consisting of Ti, Al, V, W, Ta, Si, Cr, One or more elements of the group consisting of Ag, Mo, Cu, and Zn are formed. 如申請專利範圍第7項的積層體基板的製造方法,其中,在上述第2層之上進而設置第2 Ni系合金層作為第3層,上述第2 Ni系合金層是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu及Zn所組成的群中1種以上元素而成者。 The method for producing a laminated substrate according to claim 7, wherein a second Ni-based alloy layer is further provided as a third layer on the second layer, and the second Ni-based alloy layer is added to Ni. One or more elements of a group consisting of Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, Cu, and Zn. 如申請專利範圍第6項的積層體基板的製造方法,其中,上述積層構造如下:從長條狀樹脂膜數起,第1層是使用由Cu單質、Ni單質、或Ni系合金構成的金屬材料在含有氧氣的反應性氣體環境下利用反應成膜法而形成的金屬吸收層,第2層是在惰性氣體環境下形成的銅層,上述Ni系合金是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu及Zn所組成的群中1種以上元素而成者。 The method for producing a laminated substrate according to the sixth aspect of the invention, wherein the laminated structure is such that the first layer is made of a simple substance of Cu, a simple substance of Ni, or a Ni-based alloy. The material is a metal absorption layer formed by a reaction film formation method in a reactive gas atmosphere containing oxygen, and the second layer is a copper layer formed under an inert gas atmosphere, and the Ni-based alloy is added to Ni from the group consisting of Ti and Al. One or more elements of a group consisting of V, W, Ta, Si, Cr, Ag, Mo, Cu, and Zn. 如申請專利範圍第9項的積層體基板的製造方法,其中,在上述第2層之上進而設置使用由Cu單質、Ni單質、或Ni系合金構成的金屬材料在含有氧氣的反應性氣體環境下利用反應成膜法而形成的第2金屬吸收層作為第3層,上述Ni系合金是在Ni中添加選自由Ti、Al、V、W、Ta、Si、Cr、Ag、Mo、Cu及Zn所組成的群中1種以上元素而成者。 The method for producing a laminated substrate according to claim 9, wherein a metal material composed of a simple substance of Cu, a simple substance of Ni, or a Ni-based alloy is further provided on the second layer in a reactive gas atmosphere containing oxygen. The second metal absorbing layer formed by the reaction film forming method is a third layer, and the Ni-based alloy is added with Ni selected from the group consisting of Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, Cu, and One or more elements of the group consisting of Zn are formed.
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