TW201735195A - Method for manufacturing semiconductor device - Google Patents

Abstract

This method for manufacturing a semiconductor device includes: (I) a step in which a first protective film forming film 20 provided, in the following order, with a first support sheet 23 and a thermosetting resin layer 25 is bonded to the surface 10A of a semiconductor wafer 10 provided with bumps 11, with the thermosetting resin layer 25 acting as the bonding surface; (II) a step in which the first support sheet 23 is detached from the thermosetting resin layer 25; (III) a step in which the thermosetting resin layer 25 is heated and cured, and a protective film is formed; and (IV) a step in which the semiconductor wafer 10 is diced together with the thermosetting resin layer or the protective film.

Description

Semiconductor device manufacturing method

The present invention relates to a method of fabricating a semiconductor device, and more particularly to a method of fabricating a semiconductor device using a semiconductor wafer that protects at least bumps with a protective film.

Conventionally, the manufacture of a semiconductor device using a mounting method called a flip chip method has been carried out. In the flip-chip method, an electrode portion called a bump is formed on the surface of a semiconductor wafer, and the surface of the wafer is opposed to the substrate or the like, and a semiconductor wafer is mounted on the substrate.

The semiconductor wafer or the semiconductor wafer used in the flip-chip method has a resin layer having various functions on the surface of the wafer on which the bump is provided for various purposes. Further, when the semiconductor wafer is generally ground on the back surface, a back surface polishing sheet is adhered to protect the surface of the wafer. Therefore, conventionally, there has been a case where a back surface polishing sheet and various resin layers are laminated to form an integrated laminated sheet.

In the above-mentioned laminated sheet, a thermosetting resin layer having a surface which is in contact with a circuit surface, and a thermoplastic resin layer which is directly laminated on the layer and having flexibility, and further laminated are disclosed. In the heat On the plastic resin layer, the outermost layer composed of a resin film or the like is used. The laminate is adhered to a semiconductor wafer during back grinding to protect the semiconductor wafer. In addition, after the back grinding, the thermoplastic resin layer and the outermost layer are peeled off from the thermosetting resin layer, and the thermosetting resin layer remaining on the semiconductor wafer is hardened after the semiconductor wafer is mounted on the substrate. It is used as a sealing resin.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-28734

However, the bump stress placed on the surface of the wafer concentrates on the bump neck which is a connecting portion between the semiconductor wafer and the bump, and is liable to cause breakage. Therefore, it is considered that a protective film is formed on the surface of the wafer unlike the sealing resin. The protective film is formed by applying heat curing to the thermosetting resin layer laminated on the surface of the wafer before, for example, resin sealing.

However, the thermosetting resin is fluidized by heating, and the flow of the resin is inhibited by the bumps, and it is difficult to form a uniform film thickness. When the film thickness of the protective film is not uniform, the embedding of the bump neck is insufficient, and the bump neck cannot be properly protected.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device, which has In the bump semiconductor wafer, the bump can be appropriately protected by the protective film having a uniform film thickness to ensure the embedding property of the bump neck.

The present inventors have found that a thermosetting resin layer supported on a support sheet is bonded to a surface (bump surface) on which a bump is provided on a semiconductor wafer, and is supported by a support sheet. When the thermosetting resin layer is cured, the fluidity of the thermosetting resin during heat curing can be suppressed, and the thickness of the resin layer can be maintained uniform, and the present invention will be completed. The present invention provides the following (1) to (8).

(1) A method for producing a semiconductor device, comprising: (1) a first protective film forming film in which a first support sheet and a thermosetting resin layer are sequentially provided, and the thermosetting resin layer is bonded thereto a method of bonding the surface of the semiconductor wafer to which the bump is provided; (II) heating the thermosetting resin layer to harden it to form a protective film; (III) making the thermosetting property The protective film formed by curing the resin layer peels off the first support sheet; and (IV) the process of simultaneously cutting the semiconductor wafer together with the protective film.

(2) The method of manufacturing a semiconductor device according to the above (1), further comprising: (A-1) a process of bonding a second protective film forming layer to the back surface of the semiconductor wafer; (A-2) a process of heating the second protective film forming layer to form a second protective film; and (A-3) The second protective film forming layer on the back surface of the semiconductor wafer or the second protective film is further bonded to the upper surface of the second protective film.

(3) The method of manufacturing a semiconductor device according to the above aspect (1), further comprising: (B-1) providing a second support sheet and a second protective film forming layer provided on the second support sheet (2) a film for forming a protective film, which is bonded to the back surface of the semiconductor wafer so that the second protective film forming layer is a bonding surface; and (B-2) heating the second protective film forming layer. The project of forming the second protective film.

(4) The method of manufacturing a semiconductor device according to the above aspect (2), wherein the thermosetting resin layer and the second protective film forming layer are simultaneously heated to thermally harden the layers.

(5) The method of manufacturing a semiconductor device according to any one of the above (1), wherein the first support sheet has an adhesion force of 10 N/25 mm after heating in the item (II).

(6) The method of manufacturing a semiconductor device according to any one of the preceding claims, wherein the first support sheet includes a first substrate and a The first adhesive layer provided on one surface of the first base material is provided with the thermosetting resin layer on the upper surface of the first adhesive layer.

(7) The method for producing a semiconductor device according to the above aspect, wherein the melt viscosity of the thermosetting resin layer is at a temperature at which the film for forming the first protective film is bonded to the semiconductor wafer. 1×10 ² Pa. S above 2 × 10 ⁴ Pa. When S is not full, the shear modulus of the first adhesive layer is 1 × 10 ³ Pa or more and 2 × 10 ⁶ Pa or less at the temperature at which the film for forming the first protective film is bonded to the semiconductor wafer. .

The method of manufacturing a semiconductor device according to any one of the above aspects, wherein the thermosetting resin layer has a thickness of from 0.01 to 0.99 times the height of the bump.

In the present invention, a method of manufacturing a semiconductor device in which a film thickness of a protective film is uniform and a bump is buried in a protective film to protect a bump by a protective film is provided.

10‧‧‧Semiconductor wafer

11‧‧‧Bumps

15‧‧‧Semiconductor wafer

20‧‧‧First film for forming a protective film

21‧‧‧1st substrate

22‧‧‧1st adhesive layer

23‧‧‧1st support piece

25‧‧‧ thermosetting resin layer

25A‧‧‧Protective film

30‧‧‧Second protective film forming film

31‧‧‧2nd substrate

32‧‧‧2nd adhesive layer

33‧‧‧2nd support piece

35‧‧‧2nd protective film forming layer

35A‧‧‧2nd protective film

40‧‧‧ wafer mounting substrate

1 is a schematic cross-sectional view showing a semiconductor wafer having bumps formed on its surface.

FIG. 2 is a schematic cross-sectional view showing a film for forming a first protective film.

3 is a view showing a semiconductor to which a film for forming a first protective film is adhered A schematic cross-sectional view of a process in which a wafer is heated.

4 is a schematic cross-sectional view showing a semiconductor wafer after the first support sheet is peeled off.

Fig. 5 is a schematic cross-sectional view showing a semiconductor wafer at the time of cutting.

FIG. 6 is a schematic cross-sectional view showing a state in which a semiconductor wafer that has been formed into a wafer is placed on a wafer mounting substrate.

Fig. 7 is a schematic cross-sectional view showing a semiconductor wafer in which a protective film is formed on the surface and a second protective film forming layer is laminated on the back surface.

8 is a schematic view showing a process of cutting a semiconductor wafer in which a protective film and a second protective film are formed on the front and back surfaces, respectively.

FIG. 9 is a schematic view showing a process of heating the semiconductor wafer on which the first protective film forming film and the second protective film forming layer are laminated on the front and back surfaces, respectively.

FIG. 10 is a schematic cross-sectional view showing a film for forming a second protective film.

FIG. 11 is a schematic cross-sectional view showing a semiconductor wafer in which a protective film is formed on the surface and a film for forming a second protective film is bonded to the back surface.

FIG. 12 is a schematic view showing a process of heating a semiconductor wafer in which a first protective film forming film and a second protective film forming film are provided on the front and back surfaces, respectively.

Hereinafter, specific embodiments are used for the present invention. Description.

(first embodiment)

The semiconductor wafer 10 used in the present manufacturing method is a wafer having bumps on the surface 10A as shown in FIG. The bumps 11 are usually provided with a plurality. The semiconductor wafer 10 is not particularly limited, and may be a ceramic wafer, a sapphire or the like, even if it is a germanium wafer. Although the thickness of the semiconductor wafer 10 is not particularly limited, it is preferably 0.625 to 0.825 mm. The material of the bump 11 is not particularly limited, and various metal materials are used to preferably use solder. Further, the shape of the bump 11 is not particularly limited, and may be a circular shape as shown in FIG. 1, and may be any other shape. Further, although the height of the bumps 11 is not limited, it is usually 5 to 1000 μm, preferably 50 to 500 μm.

The method of manufacturing a semiconductor device according to the first embodiment of the present invention has at least the following items.

(I) The first protective film forming film in which the first support sheet and the thermosetting resin layer are sequentially provided, and the thermosetting resin layer is bonded to the semiconductor wafer so that the thermosetting resin layer is used as a bonding surface. (II) a process of forming a protective film by heating a thermosetting resin layer to cure the film; and (III) peeling off the protective film formed by curing the thermosetting resin layer 1 support sheet engineering; and (IV) engineering of cutting semiconductor wafers simultaneously with protective film.

Hereinafter, the manufacturing method of the present embodiment is applied to each project. Detailed instructions are given.

[Engineering (I)]

In the first aspect, as shown in FIG. 2, the first protective film forming film including the first support sheet 23 and the thermosetting resin layer 25 provided on the first support sheet 23 is prepared. 20. In addition, as shown in FIG. 3, the first protective film forming film 20 is bonded to the surface (bump surface) 10A of the semiconductor wafer 10 so that the thermosetting resin layer 25 is a bonding surface.

Here, in the first protective film forming film 20, the first supporting sheet 23 includes the first base material 21 and the first adhesive layer provided on one surface of the first base material 21, as shown in Fig. 2 . In the agent layer 22, the thermosetting resin layer 25 may be adhered to the first adhesive layer 22, but the first adhesive layer 22 is omitted, and the heat is directly adhered to the upper surface of the first substrate 21. The curable resin layer 25 may also be used. Further, even if the surface of one of the first base materials 21 is surface-treated, or the layer of the first support sheet 23 is provided with an adhesive layer, it is adhered to the thermosetting property via the layer or the surface-treated surface. The resin layer 25 may also be used. Further, an intermediate layer may be provided between the first adhesive layer 22 and the first base material 21.

Further, even on the thermosetting resin layer 25 of the first protective film forming film 20, a release material (not shown) may be further adhered. The release material protects the thermosetting resin layer 25 until the first protective film formation film 20 is used. The release material-based first protective film formation film 20 is formed from the first protective film before being adhered to the semiconductor wafer 10 The film 20 is peeled off and removed.

Although the first adhesive layer 22 is formed of various adhesives, it may be formed by curing with an irradiation energy ray and by an energy ray-curable adhesive which is lowered in adhesion to the object.

Therefore, it is preferable that the first support sheet 23 has heat resistance. In other words, as the first base material 21 constituting the first support sheet 23, it is preferable that the base material 21 which is heated by the process (II) does not melt or shrinks significantly. In addition, the first support sheet 23 having heat resistance is not heated even when it is heated at a specific time, and the adhesion to the object is not increased. Specifically, the first support sheet 23 having heat resistance is such that the heating force after the heating of the item (II) is 10 N/25 mm or less. Further, in order to make the adhesion force with respect to the heated first protective film 25A more appropriate, the adhesion force after the heating of the first support sheet 23 (II) is preferably 0.3 to 9.8 N/25 mm, and 0.5 to 0.5. 9.5N/25mm is better.

In addition, when the adhesive layer is formed by the energy ray-curable adhesive, the adhesive layer is irradiated with an energy ray at the same timing and conditions as the manufacturing method to be applied, and is hardened. Further, the adhesive agent is heated at the same timing and conditions as the manufacturing method to be carried out. In the manufacturing method to be carried out, after the heating of the process (II), when the energy ray is irradiated, after the heating, the adhesive layer is irradiated with an energy ray, and the value at the time of the adhesion force is measured. Further, in the production method to be carried out, before the heating of the process (II), the energy line is irradiated to the pressure-sensitive adhesive layer before the heating, and the value at the time of the adhesion force is measured. Furthermore, the first branch of the adhesive measurement The heating of the sheet is performed in a state where the first support sheet is adhered to the thermosetting resin layer as the object, and the thermosetting resin layer is cured by heating to form a protective film. The details of the force measurement method are as described in the examples.

The bonding of the first protective film forming film 20 to the semiconductor wafer 10 is preferably carried out at a bonding temperature of 30 to 150 ° C, and more preferably at 40 to 100 ° C.

In addition, it is preferable that the adhesion of the first protective film forming film 20 is carried out while being pressed, for example, by pressing it by a pressing means such as a pressure roller. Alternatively, the first protective film forming film 20 may be pressure-bonded to the semiconductor wafer 10 by a vacuum laminator.

When the first protective film forming film 20 is adhered to the semiconductor wafer 10, as shown in FIG. 3, the bumps 11 are passed through the thermosetting resin layer 25 and protrude to the first support sheet 23 side. In this manner, the bumps 11 are protruded to the side of the first support piece 23, and it is easy to fix the bumps 11 by contacting the electrodes on the wafer mounting substrate or the like by reflowing as will be described later.

However, the bumps 11 do not protrude to the side of the first support sheet 23, and may be buried in the state of being embedded inside the thermosetting resin layer 25. Even in such a state, in the case of the work (II) or the like, the thermosetting resin layer 25 is caused to flow by heating to cause the bumps 11 to protrude.

The first support sheet 23 includes a base material 21 and a first adhesive layer 22 provided on one surface of the base material 21, and when the thermosetting resin layer 25 is provided on the upper surface of the first adhesive layer 22, The melt viscosity of the thermosetting resin layer 25 is 1 × 10 ² Pa at a temperature (bonding temperature) when the first protective film forming film 20 is bonded to the semiconductor wafer 10 . S above 2 × 10 ⁴ Pa. S is not full, and the shear modulus of the first adhesive layer 22 is 1 × 10 ³ Pa at the bonding temperature. S above 2 × 10 ⁶ Pa. S is below. Further, the above-mentioned melt viscosity of the thermosetting resin layer 25 is 1 × 10 ³ Pa. S above 1 × 10 ⁴ Pa. S is less than, and the shear adhesive modulus of the first adhesive layer 22 is preferably 1 × 10 ⁴ Pa or more and 5 × 10 ⁵ Pa or less.

At the bonding temperature, the shear modulus of the first adhesive layer 22 and the melt viscosity of the thermosetting resin layer 25 are within the above range, and the thermosetting resin layer 25 is embedded as a bump. The bump neck of the root portion of the 11 and the front end of the bump 11 easily protrude from the thermosetting resin layer 25. In addition, it is also prevented that the thermosetting resin layer 25 is excessively flowed during heating of the item (II) to be described later.

The melt viscosity of the thermosetting resin layer 25 can be adjusted, for example, by changing the blending amount of each material in the thermosetting resin composition to be described later or the type of each material. Further, the shear modulus of the first adhesive layer 22 can be adjusted by changing the type of the adhesive. Further, when the first adhesive layer 22 is formed of an energy ray-curable adhesive, the first support sheet 33 is adhered to the semiconductor wafer 10, and the energy ray is irradiated to partially or completely harden the energy. , can adjust the shear modulus.

In addition, the melt viscosity of the thermosetting resin layer was a value measured by a parallel plate using a rheometer (RS-1 manufactured by HAAKE Co., Ltd.). More specifically, the value at the time of measurement in the range of room temperature to 250 ° C under the conditions of a gap of 100 μm, a rotating cone diameter of 20 mm, and a rotation speed of 10 s ^-1 .

Further, the shear modulus of the adhesive layer was formed into an adhesive layer having a thickness of 0.2 mm, and was measured using a shear modulus measuring device (manufactured by Rheometric Co., Ltd., ARES). Specifically, the temperature is set to the same temperature as the bonding temperature, at a frequency of 1 Hz and a plate diameter of 7.9 mm. The shear modulus is measured under the condition of 1% skew. Further, at the time of bonding, when the adhesive layer was hardened by the energy ray, the adhesive layer was hardened under the same conditions, and the shear modulus was measured.

The thermosetting resin layer 25 is preferably a thickness of from 0.01 to 0.99 times the height (bump height) of the bumps 11. By setting the thickness of the thermosetting resin layer 25 to 0.01 times or more of the height of the bump, the bump neck is buried inside the protective film, and it is easy to prevent breakage of the bump neck. In addition, it is easy to make the front end of the bump protrude from the thermosetting resin layer 25 by setting it as 0.99 times or less. From these viewpoints, it is understood that the thermosetting resin layer 25 is more preferably 0.1 to 0.9 times the height of the bump.

Further, although the thickness of the thermosetting resin layer 25 is not limited, it is usually 5 to 500 μm, preferably 10 to 100 μm.

[Engineering (II)]

After the above process (I), the thermosetting resin layer 25 laminated on the surface 10A of the semiconductor wafer 10 is heated (engineering (II)). In the heating system, as shown in FIG. 3, the semiconductor wafer 10 on which the first protective film forming film 20 (that is, the first supporting sheet 23 and the thermosetting resin layer 25) is laminated is disposed. For example, it is preferred to carry out heating by heating the inside of the furnace or the like. Since the thermosetting resin layer 25 contains Since the thermosetting resin is thermally cured by the above heating, it becomes the protective film 25A (refer FIG. 4).

The heating condition is not particularly limited as long as the thermosetting resin contained in the thermosetting resin layer 25 is cured. For example, at 80 to 200 ° C for 30 to 300 minutes, preferably 100 to 180 ° C, 60 to 200 minutes. During the period.

[Engineering (III)]

After the heating of the process (II), in the process (III), the first support piece 23 adhered to the surface of the semiconductor wafer 10 is peeled off from the protective film 25A. After the peeling, the protective film 25A is left as it is on the semiconductor wafer 10 as shown in FIG.

Here, when the first support sheet 23 has heat resistance as described above, even if it is heated, there is no possibility that the adhesion force with respect to the protective film 25A is remarkably improved. Therefore, even after the heating of the process (II), the first support sheet 23 can be easily peeled off from the protective film 25A.

When the first adhesive layer 22 is formed of an energy ray-curable adhesive, the first adhesive layer 22 is irradiated with an energy ray before the first support sheet 23 is peeled off from the semiconductor wafer 10 in the item (III). The first adhesive layer 22 is first cured. The first adhesive layer 22 is cured by irradiation with an energy ray, and the adhesion is lowered, so that it can be easily peeled off at the interface with the thermosetting resin layer 25.

The timing at which the first adhesive layer 22 is irradiated with the energy ray and hardened is not particularly limited, even if the first support sheet 23 is adhered to the semiconductor wafer. It can be hardened before 10. Furthermore, even after sticking to the semiconductor wafer 10, for example, even between engineering (II) and engineering (III). In addition, for example, the first adhesive sheet 22 is irradiated with an energy ray to the extent that it is not completely cured before the first support sheet 23 is adhered to the semiconductor wafer 10, and the adhesive is lowered, and after being adhered to the semiconductor wafer 10, Further irradiation of the energy ray causes further hardening, and the adhesion force may be further lowered.

[Engineering (IV)]

Next, the semiconductor wafer 10 having the protective film 25A formed on the bump surface is divided into a plurality of semiconductor wafers 15 by dicing as shown in FIG. In this process, the protective film 25A and the semiconductor wafer 10 are simultaneously divided by the shape of the semiconductor wafer 15.

The cutting method is not particularly limited, and a known method such as blade cutting, stealth laser cutting, laser cutting, or the like can be used, for example, by providing the slit 17 by penetrating the protective film 25A and the semiconductor wafer 10. Conductor.

As shown in FIG. 5, the dicing is performed by attaching the second supporting sheet 33 to the back surface 10B side of the semiconductor wafer 10 to support the semiconductor wafer 10, and providing the dicing hole 17 from the surface 10A side of the semiconductor wafer 10.

In the configuration of FIG. 5, the second support sheet 33 includes the second base material 31 and the second adhesive layer 32 provided on one surface of the second base material 31, and the second adhesive layer 32 is interposed therebetween. It is pasted on the semiconductor wafer 10. However, even if the second adhesive sheet 32 is omitted, the second support sheet 33 is omitted. Alternatively, the surface of the second substrate 31 on the side of the semiconductor wafer 10 may be surface-treated, or a layer other than the adhesive layer may be provided instead of the adhesive layer, and laminated via the layer or the surface-treated surface. It may be on the back side of the semiconductor wafer 10. Further, an intermediate layer (not shown) may be further provided between the second adhesive layer 32 and the second base material 31.

The second support sheet 33 is slightly larger than the semiconductor wafer 10, and its central portion is adhered to the semiconductor wafer 10, and the peripheral region is not adhered to the semiconductor wafer 10, and is preferably attached to the support member 13. The support member 13 may be a member for supporting the second support piece 33, such as a ring frame, at the time of cutting or the like.

In addition, even if it is not necessary to directly adhere the second adhesive layer 32 to the support member 13, the second support sheet 33 is provided with a re-peeling adhesive layer or the like in the outer peripheral region of the second support sheet 33, and the adhesive layer is peeled off again. It can also be pasted.

Although the second adhesive layer 32 is formed of various adhesives, it may be formed by an energy ray-curable adhesive. In the case where the energy ray-curable adhesive is formed, at least the region (central region) of the back surface side of the semiconductor wafer 10 bonded to the second adhesive layer 32 is irradiated with energy rays before pick-up to be described later. The second adhesive layer 32 is cured to reduce the adhesion to the back surface of the semiconductor wafer 10. The timing of the irradiation energy ray is not particularly limited, and may be performed before being bonded to the semiconductor wafer 10, even after the dicing, before the pickup.

Further, even if the outer peripheral region is not subjected to the irradiation of the energy ray, the adhesive is maintained at a high level for the purpose of the subsequent attachment to the support member 13. The status is also OK.

In the present embodiment, the semiconductor wafer 15 is picked up after the dicing, and after being mounted on the wafer mounting substrate or the like by reflow soldering, the gap between the semiconductor wafer 15 and the wafer mounting substrate is sealed by a sealing resin. The required engineering to manufacture semiconductor devices.

Here, the method of picking up is not particularly limited. For example, the semiconductor wafer 15 is pushed up from the back side by a plug or the like via the second support piece 33, and the semiconductor wafer 15 is peeled off from the second support piece 33 by the vacuum collector. Wait for the method of picking up.

The semiconductor wafer 15 picked up is attached to a wafer mounting substrate or the like, for example, by the following method.

In other words, the semiconductor wafer 15 is placed at a specific position on the wafer mounting substrate 40 such that the surface (that is, the bump surface) faces the wafer mounting substrate 40 as shown in FIG. Further, the bumps 11 are fixed to the wafer mounting substrate 40 by reflow, and the semiconductor wafer 15 and the wafer mounting substrate 40 are electrically connected. In the reflow process, for example, a conductive material (not shown) such as solder provided on the substrate 40 is melted, and the bump 11 is welded to the electrode of the wafer mounting substrate 40 or the like by the conductive material.

The reflow system is performed by, for example, heating the wafer mounting substrate 40 and the semiconductor wafer 15 disposed on the substrate 40 in a heating furnace. The heating in the reflow is carried out in an atmosphere of, for example, 120 to 300 ° C, and is carried out for 1 to 2 minutes in an atmosphere of 0.5 to 5 minutes, preferably 160 to 260 ° C.

In the manufacturing method of the present embodiment, the semiconductor wafer 10 is preferably subjected to back grinding. The back grinding is performed in a state in which the first support sheet 23 is adhered to the surface 10A side of the semiconductor wafer 10. That is, the back grinding of the semiconductor wafer is performed between the engineering (I) and the engineering (III). Accordingly, the first support sheet 23 is used not only for supporting the sheet of the thermosetting resin layer 25 but also for the back surface grinding sheet for protecting the bump surface during the back grinding. Furthermore, the back grinding of the semiconductor wafer 10 is preferably performed between the engineering (I) and the engineering (II).

The back surface grinding of the semiconductor wafer is performed by, for example, fixing the surface of the semiconductor wafer 10 to which the first support sheet 23 is adhered to a fixed platform such as a jig platform, and grinding the back surface 10B by a grinder or the like. The thickness of the wafer 10 after grinding is not particularly limited, and is usually 5 to 450 μm, preferably 20 to 400 μm.

Next, the materials of the respective members used in the present manufacturing method will be described in detail.

(thermosetting resin layer)

The thermosetting resin layer 25 contains at least a thermosetting resin, and can be subsequently heated on the wafer 10 by a heat curing process to be described later to form the protective film 25A.

Examples of the thermosetting resin used for the thermosetting resin layer 25 include an epoxy resin, a phenol resin, an amine resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. . The thermosetting resin may be used alone or in combination of two or more. As a thermosetting resin, especially It is preferable to use an epoxy resin having a small amount of ionic impurities or the like which causes corrosion of the semiconductor element. Further, the thermosetting resin may contain a curing agent, for example, as a curing agent for an epoxy resin, and a phenol resin may be suitably used.

In the thermosetting resin layer 25, the thermosetting resin is preferably 5 to 70% by mass, and more preferably 10 to 50% by mass based on the total amount of the thermosetting resin layer (that is, the thermosetting resin composition). .

In addition, the thermosetting resin layer 25 is preferably composed of a thermosetting resin composition containing a thermoplastic resin and a filler in addition to the thermosetting resin.

As the thermoplastic resin, an acrylic resin, a polyester resin, a urethane resin, an acryl urethane resin, a silicone resin, a rubber polymer, a phenoxy resin or the like can be used, but among these, an acrylic resin is preferred.

The total amount of the thermosetting resin in the thermosetting resin layer relative to the thermosetting resin layer (that is, the thermosetting resin composition) is preferably from 1 to 50% by mass, and more preferably from 5 to 40% by mass.

Further, examples of the filler include powders such as cerium oxide, aluminum oxide, talc, calcium carbonate, titanium oxide, iron oxide, cerium carbide, and boron nitride, and the spheroidized beads and single sheets are used. Among the inorganic fillers selected from the group consisting of crystal fibers and glass fibers, a cerium oxide filler or an alumina filler is preferred.

The filler in the thermosetting resin layer is preferably from 5 to 75% by mass, and more preferably from 10 to 60% by mass, based on the total amount of the thermosetting resin layer (that is, the thermosetting resin composition).

Further, the thermosetting resin composition may contain other additives such as a curing agent such as a curing accelerator, a coupling agent, a pigment, or a dye, in addition to the above components.

The curing accelerator is not particularly limited, and for example, at least one selected from the group consisting of an amine-based curing accelerator, a phosphorus-based curing accelerator, an imidazole-based curing accelerator, a boron-based curing accelerator, and a phosphorus-boron-based curing accelerator can be used. . Further, as the coupling agent, a decane coupling agent can be used.

(1st and 2nd substrates)

As the first base material 21, a resin film can be used, but it is preferable to use heat resistance as described above. The resin film constituting the first base material 21 may be a single layer film composed of one type of resin film, and may be a multilayer film in which a plurality of resin films are laminated.

Specific examples of the resin film include a polyethylene film, a polypropylene film, a polybutylene film, a polybutadiene film, a polymethylpentene film, an ethylene-borneon thin film, and a borneol thin resin film. Olefin-based film; ethylene-vinyl acetate copolymer film, ethylene-(meth)acrylic copolymer film, ethylene-(meth)acrylate copolymer film, etc.; ethylene-based copolymer film; polyvinyl chloride film, vinyl chloride copolymerization a polyvinyl chloride film such as a film; a polyester film such as a polyethylene terephthalate film or a polybutylene terephthalate film; a polyurethane film; a polyimide system Film, polyamine film, polyacetal film, polycarbonate film, polystyrene film, fluororesin film, modified polyoxyxylene film, polyphenylene sulfide film, polyfluorene system Film and the like. Furthermore, These bridged films and ionic polymers are used to modify the film.

Among these, as the resin film used for the first base material 21, a polyester film, a biaxially stretched polypropylene film, a polyimide film, and a polyamide film are preferable, and polyester is preferable. The film is more preferred, and the polyethylene terephthalate film is preferred. Since these resin films have heat resistance and high rigidity, the case where the thermosetting resin layer 23 flows in the process (II) is prevented, and the film thickness is prevented from being uneven.

Further, as the second base material 31 used for the second support sheet 33, a resin film is preferably used. The second base material 33 can be appropriately selected from the above-mentioned resin film, but the second base material 31 does not need to have heat resistance, and it is not necessary to have high rigidity. In addition, the base materials used for the first and second base materials 31 and 33 may be the same as each other, and may be used differently. Further, in the case where the first and second base materials 21 and 31 are the energy ray-curable adhesives constituting the first and second adhesive material layers 22 and 23, respectively, it is preferable to penetrate the energy ray. .

The thickness of each of the first and second base materials 21 and 31 is, for example, 10 to 300 μm, preferably 15 to 200 μm.

(1st and 2nd adhesive layers)

The adhesive for forming the first and second adhesive layers 22 and 32, respectively, is not particularly limited, and examples thereof include an acrylic adhesive, a rubber adhesive, a silicone adhesive, a polyester adhesive, and a nail. An acid ester-based adhesive, a polyolefin-based adhesive, a vinyl alkyl ether-based adhesive, a polyamide-based adhesive, a fluorine-based adhesive, an ethylene-diene copolymer-based adhesive, and the like, wherein An acrylic adhesive is preferred. For example, when an acrylic adhesive is used for the first adhesive layer 22, the shear modulus of the adhesive layer is easily made into the above range.

The adhesive is usually an acrylic resin, a rubber component, a silicone resin, a polyester resin, a urethane resin, a polyolefin resin, a vinyl alkyl ether resin, a polyamide resin, a fluorine resin, or the like. In addition to the adhesive component (mainly a polymer) such as an ethylene-diene copolymer, there are a crosslinking agent, an adhesive-imparting agent, an oxidation inhibitor, a plasticizer, a filler, a charge prevention agent, and light. It is composed of an adhesive composition of a component such as a polymerization initiator or a flame retardant. In addition, the adhesive component also broadly includes the concept that the polymer itself does not have adhesiveness substantially, but the adhesive polymer is expressed by addition of a plasticizable component or the like.

As described above, the first and second adhesive layers 22 and 32 may be formed of an energy ray-curable adhesive, and may be formed of a non-energy ray-curable adhesive that does not harden even when irradiated with an energy ray adhesive. Also. Further, in the case where the energy line electromagnetic wave or the charged particle beam has an energy quantum, it means active light or an electron beam such as ultraviolet light. However, in the present manufacturing method, it is preferred to use ultraviolet light. In addition, even if only one of the first and second adhesive layers 22 and 32 is formed of an energy ray-curable adhesive, both of them may be formed of an energy ray-curable adhesive.

The energy ray-curable adhesive is specifically composed of an energy ray-curable adhesive containing a component having a photopolymerizable unsaturated group. The energy ray-curing type adhesive is not particularly limited, but may be exemplified by a main polymer (for example, an acrylic polymer) itself in an adhesive (for example, a main The side chain of the polymer is introduced into a photopolymerizable unsaturated group such as a double bond.

In addition, as the energy ray-curable adhesive, an energy ray-polymerizable compound having a photopolymerizable unsaturated group may be blended, unlike a main polymer (for example, a propionic acid-based polymer). In this case, the main polymer may be introduced into the photopolymerizable unsaturated group, even if it is not introduced.

Since the first support sheet 23 has heat resistance as described above, it is preferable that the adhesive for forming the first adhesive layer 22 has heat resistance. The heat-resistant adhesive is not particularly limited as long as it is maintained at a low adhesion even after heating, and specifically, energy ray-curable acrylic adhesive (A) and water dispersion are mentioned. Type acrylic adhesive (B). Among these, the energy ray-curable acrylic pressure-sensitive adhesive (A) is preferred. In addition, the energy ray-curable acrylic pressure-sensitive adhesive (A) is irradiated with an energy ray and hardened before heating in the process (II), and the heat resistance is easily exhibited.

An example of the energy ray-curable acrylic pressure-sensitive adhesive (A1) is an energy ray-curable acrylic polymer (A1) having a photopolymerizable unsaturated group in a side chain. In addition, the composition of the main component is generally 50% by mass or more, and preferably 70% by mass or more, of the total amount of the adhesive constituting the adhesive layer.

The energy ray-curable acrylic polymer (A1) is a (meth) acrylate copolymer (A2) in which -COOH, -NCO, epoxy, -OH, -NH _{2 are} introduced into the polymer chain. In the active point, a compound having a photopolymer unsaturated group (hereinafter also referred to as an unsaturated group-containing compound (X)) is reacted.

The above-mentioned active point is introduced into the (meth) acrylate-based copolymer (A2), and when the (meth) acrylate-based copolymer (A2) is polymerized, if -COOH, -NCO, or epoxy group is used, A monomer having a functional group such as -OH or -NH ₂ may be used.

Further, in the present specification, the (meth)acrylic acid is used as a term indicating both "acrylic acid" and "methacrylic acid", and the same applies to other similar terms.

(Methyl) As the propionate-based copolymer (A2), specifically, a (meth)acrylic acid alkyl ester having an alkyl group having 1 to 20 carbon atoms and a copolymer of another monomer can be given.

Examples of the alkyl (meth)acrylate having an alkyl group having 1 to 20 carbon atoms include methyl (meth)acrylate, ethyl (meth)acrylate, and propyl (meth)acrylate. Methyl)butyl acrylate, amyl (meth)acrylate, hexyl (meth)acrylate, cyclohexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (meth)acrylic acid Octyl ester, decyl (meth)acrylate, dodecyl (meth)acrylate, tetradecyl (meth)acrylate, hexadecyl (meth)acrylate, octadecyl (meth)acrylate, and the like. These may be used alone or in combination of two or more.

Further, among these, an alkyl (meth)acrylate having an alkyl group having 6 to 14 carbon atoms is preferred. Here, the alkyl (meth)acrylate having an alkyl group having 6 to 14 carbon atoms is 50 to 97% by mass based on the total amount of the monomers constituting the (meth)acrylate copolymer (A2). Good, 70 to 95% by mass is better. Further, the alkyl (meth) acrylate having an alkyl group having 6 to 14 carbon atoms is preferably an alkyl group having 8 to 12 carbon atoms, specifically, 2-ethyl (meth)acrylate. Hexyl ester and dodecyl (meth)acrylate are more preferred. In this way, by using an alkyl (meth) acrylate having an alkyl group of 6 to 14, the heat resistance of the adhesive is easily improved, and even if heated at a high temperature, the force is hard to rise.

In addition, examples of the other monomer to be used in the (meth) acrylate-based copolymer (A2) include functional groups such as -COOH, -NCO, epoxy group, -OH, -NH ₂ and the like. monomer.

Here, examples of the monomer having a functional group include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 3-hydroxypropyl (meth)acrylate. Hydroxyalkyl (meth) acrylate such as 2-hydroxybutyl methacrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate; monomethylamine (meth) acrylate (meth)acrylic acid monoalkylamino group, such as ethyl ethyl methacrylate, monoethylaminoethyl (meth) acrylate, monomethylaminopropyl (meth) acrylate, monoethylaminopropyl (meth) acrylate An alkyl ester; an ethylenically unsaturated carboxylic acid such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, butylene diacid or cis-methylbutenedioic acid; (meth)isocyanate An oxyethyl ester or the like containing an isocyanate (meth) acrylate; (meth)acrylic acid propyl acrylate, β-methyl propyl propyl acrylate (meth) acrylate, (3, 4-epoxycyclohexyl) ( An epoxy group-containing (meth) acrylate such as methyl acrylate or 3-epoxy-2-hydroxypropyl (meth) acrylate, etc., among which hydroxy(meth)acrylate is used. Alkyl esters are preferred.

Even if the monomer having such a functional group is used alone, it may be used in combination of two or more kinds. Here, the single system having a functional group is preferably from 3 to 40% by mass, more preferably from 5 to 30% by mass, based on the total amount of the monomers constituting the (meth)acrylate copolymer (A2).

Further, as other monomers, even vinyl esters, olefins, halogenated olefins, styrene monomers, diene monomers, nitrile monomers, N,N-dialkyl substituted acrylamides are used. Etc.

Further, as the unsaturated group-containing compound (X) which reacts the above-mentioned active sites, it is possible to have, for example, (meth)isocyanatopropenyloxyethyl ester and (meth)acrylic acid ring depending on the kind of active site. A photopolymerizable compound such as oxypropyl ester, pentaerythritol mono(meth)acrylic acid, dipentaerythritol mono(meth)acrylate or trimethylolpropane mono(meth)acrylic acid is appropriately selected and used.

Further, the unsaturated group-containing compound (X) is preferably one part of a functional group (active site) of the (meth) acrylate-based copolymer (A2), specifically, an unsaturated group-containing compound (X). The reaction is preferably carried out at 50 to 90 mol% of the functional group of the (meth)acrylate copolymer (A2), and more preferably 55 to 85 mol%.

In the energy ray-curable acrylic polymer (A1), one of the functional groups does not remain in the reaction with the unsaturated group-containing compound (X), and thus it is easily crosslinked by a crosslinking agent to be described later. Further, the functional group remaining unreacted is preferably a functional group having an active hydrogen of -COOH, -OH or -NH ₂ , and more preferably -OH.

Furthermore, the energy ray hardening type acrylic adhesive (A) is divided In addition to the energy ray-curable acrylic polymer (A1) having a photopolymerizable unsaturated group in the side chain, the non-energy curing type (methyl) containing no photopolymerizable unsaturated group in the side chain is contained. The acrylate copolymer (A2) may also be used. In this case, the (meth)acrylate-based copolymer (A2) can be used in the same manner as described above, but is preferably a functional group having an active hydrogen such as -OH as described above.

In addition, as another example of the energy ray-curable acrylic pressure-sensitive adhesive (A), a propionic acid-based polymer as a main component and blended with an energy ray-polymerizable oligomer and an energy ray polymerizable single can be used. The energy ray polymerizable compound (Y) selected by the body.

Here, as the acrylic copolymer, the (meth)acrylate copolymer (A2) having no photopolymerizable unsaturated group in the side chain as described above is usually used, but it is also possible to use polymerizability in the side chain. The energy-hardenable acrylic polymer (A1) having an unsaturated group may be used in combination with the above (A2) and (A1).

Examples of the energy ray polymerizable oligomer include a polyester acrylate type, an epoxy acrylate type, a urethane acrylate type, a polyol acrylate type, a quinone imine (meth) acryl, and an ethylenic unsaturated group. A copolymerized oligomer or the like of a copolymer of a base monomer. Further, examples of the energy ray polymerizable monomer include various monofunctional (meth)acrylic and polyfunctional (meth)acrylic acids. In addition, as a specific example of the energy ray-polymerizable oligomer and the energy ray-polymerizable monomer, the content described in Japanese Patent No. 4679896 can be used.

Use of the energy ray polymerizable oligomer or energy ray polymerizable monomer The amount is selected to have the above heat resistance by irradiation with an energy ray.

The energy ray-curable acrylic adhesive preferably contains a crosslinking agent. Since the acrylic polymer is easily crosslinked by containing a crosslinking agent, heat resistance is easily improved. The crosslinking agent is not particularly limited, and it can be used as a crosslinking agent from a conventional acrylic pressure-sensitive adhesive, and any one can be appropriately selected and used. Examples of the crosslinking agent include a polyisocyanate compound, an epoxy resin, a melamine resin, a urea resin, a dialdehyde, a methylol polymer, an aziridine compound, a metal chelate compound, a metal alkoxide, and a metal salt. Wait. It is preferred to use a polyisocyanate compound.

Examples of the polyisocyanate compound include an aromatic polyisocyanate such as toluene diisocyanate, diphenylmethane diisocyanate or benzodiamethylene diisocyanate; an aliphatic polyisocyanate such as hexamethylene diisocyanate; and an isophor. An ketone diisocyanate, an alicyclic polyisocyanate of hydrogenated diphenylmethane diisocyanate, and the like, and the biuret, isocyanurate, ethylene glycol, propylene glycol, neopentyl glycol, Trimethylolpropane, an adduct of a reactant of a low molecular weight active hydrogen-containing compound such as castor oil, or the like.

The crosslinking agent may be used alone or in combination of two or more. In addition, although the amount of use varies depending on the type of the crosslinking agent, it is usually 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, per 100 parts by mass of the acrylic polymer in the adhesive. The range is selected. In addition, the acrylic polymer refers to both the energy ray-curable propylene-based polymer (A1) contained in the adhesive and the non-energy-curable acrylic polymer such as the (meth) acrylate-based copolymer (A2). .

The energy ray-curable acrylic pressure-sensitive adhesive (A) preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include a benzophenone-based, benzoin-based, acetophenone-based, thioxanthone-based, mercaptophosphine-based, and titanocene-based photopolymerization initiator. These may be used in combination of two or more kinds, and the blending amount may be a component relative to a photopolymerization initiator having an adhesive (that is, an energy ray polymerizable compound (Y). 100 parts by mass of the energy ray-curable acrylic polymer (A1) is usually selected in the range of 0.2 to 20 parts by mass, preferably 0.5 to 10 parts by mass.

Further, in the energy ray-curable acrylic pressure-sensitive adhesive, various additives generally used for the acrylic pressure-sensitive adhesive, such as an adhesion-imparting agent and oxidation prevention, may be added as needed in the range which does not impair the object of the present invention. Agent, ultraviolet absorber, light stabilizer, softener, filler, etc.

Further, the acrylic polymer used in the energy ray-curable acrylic adhesive preferably has a weight average molecular weight of 300,000 or more, preferably 400,000 to 1,000,000. Further, the weight average molecular weight is a value in terms of standard polystyrene measured by the GPC method, and specifically, a method measured by the examples described later.

In addition, in the energy ray-curable acrylic pressure-sensitive adhesive, the acrylic polymer may be added to the adhesive in an amount of 50% by mass or more, and 75% by mass or more based on the total amount of the adhesive. Preferably.

In addition, as the water-dispersible acrylic pressure-sensitive adhesive (B), a (meth)acrylic acid alkyl group having a carbon number of 4 to 12 in an alkyl group is exemplified. A copolymer emulsion obtained by emulsion-polymerizing a monomer having a carboxyl group-containing monomer in the presence of an emulsifier as a main component. Here, as a specific example of the alkyl acrylate having an alkyl group having 4 to 12 carbon atoms, the alkyl (meth)acrylate is appropriately selected. Further, as the carboxyl group-containing single amount, it is appropriately selected from the ethyl unsaturated carboxylic acid.

Further, the copolymer emulsion may be subjected to emulsion polymerization of a monomer other than the (meth)acrylic acid alkyl ester and the carboxyl group-containing monomer, and as such a monomer, it can be used for the above (meth). Various monomers of the acrylate-based copolymer (A2) are appropriately selected.

When the water-dispersible acrylic pressure-sensitive adhesive (B) is used, the pressure-sensitive adhesive preferably contains a crosslinking agent, and further, other additives may be blended as needed.

Although the thickness of the first adhesive layer 22 is appropriately adjusted depending on the height of the bump, it is preferably 5 to 500 μm, more preferably 10 to 100 μm. Further, the thickness of the second adhesive layer 32 is preferably 5 to 500 μm, more preferably 10 to 100 μm. Further, the first and second adhesive layers 22 and 32 may be formed of the same material, and may be formed of different materials.

The first and second adhesive layers 22 and 32 may be applied to the first and second support sheets 23 and 33, or applied to a release material, for example, if it is necessary to dilute the adhesive by a diluent. , formed by drying. Further, when the adhesive layer is formed on the release material, it is bonded to the first and second support sheets 23 and 33.

(middle layer)

The intermediate layer used in the first and second support sheets 23 and 33 is preferably formed by curing a curable material containing a urethane (meth) acrylate. By including the urethane (meth) acrylate as the curable material, the stress acting on the first and second support sheets 23 and 33 can be alleviated. Therefore, vibrations generated in the first and second support pieces 23 and 33 can be absorbed in each process.

The curable material may contain, in addition to the urethane (meth) acrylate, a monomer component such as an acrylic monomer. As the acrylic monomer, an alicyclic compound such as isobornyl (meth) acrylate or dicyclopentenyl (meth) acrylate is preferable. Further, the curable material is preferably cured by an energy ray. Further, in the case where the curable material is hardened by the energy ray, it is preferred to contain a photopolymerization initiator.

In the case where any of the first and second support sheets 23 and 33 has an intermediate layer, even if the materials used are the same, they may be different. The thickness of the intermediate layer is, for example, 5 to 1000 μm, preferably 10 to 500 μm.

When the thermosetting resin layer 25 is heated and applied to the manufacturing method of the first embodiment described above, as shown in FIG. 3, the thermosetting resin layer 25 is stacked on top of the thermosetting resin layer 25. Layer 1 support sheet 23. Therefore, when the thermosetting resin layer 25 is heated and hardened, the fluidity of the thermosetting resin is suppressed by the first support sheet 23, and the film thickness of the protective film 25A is prevented from becoming uneven. Therefore, since the protective film 25A which is a cured product of the thermosetting resin layer 25 has a uniform film thickness, it is laminated on the semiconductor crystal in a manner of embedding the bump neck. On the surface 10A of the circle 10, the bump 11 can be appropriately protected.

In addition, the adhesion of the first support sheet 23 to the thermosetting resin layer 25 is increased by the heating of the process (II), and the peeling of the first support sheet 23 from the protective film 25A cannot be caused in the process (III). Although it is unfavorable, as described above, when the first adhesive layer 22 is used, heat resistance is prevented, and such peeling failure is prevented.

<Second embodiment>

Next, the second embodiment will be described as different from the first embodiment.

The manufacturing process of the second embodiment includes the works (A-1), (A-2), and (A-3) in addition to the processes (I) to (IV) described in the first embodiment.

(A-1) Project of bonding the second protective film forming layer to the back surface of the semiconductor wafer

(A-2) Engineering for heating the second protective film forming layer to form the second protective film

(A-3) Project of further bonding the second support sheet to the upper surface of the second protective film formed on the back surface of the semiconductor wafer

[Engineering (A-1)]

In the present embodiment, as in the first embodiment, after the processes (I) and (II) are performed (that is, after thermal curing is performed, after the protective film 25A is formed on the surface 10A of the semiconductor wafer 10), Semiconductor wafer The back surface 10B (the surface on the opposite side to the bump surface) is bonded to the second protective film forming layer 35 as shown in FIG. The second protective film forming layer 35 contains at least a thermosetting resin, and is heated to become the second protective film 35A as will be described later.

In the present process, the film formed of the second protective film forming layer 35 may be adhered to the back surface 10B of the semiconductor wafer 10, but it is provided, for example, on one of the supporting substrates (not shown). The second protective film forming layer 35 on the surface may be adhered to the back surface 10B of the semiconductor wafer 10. In addition, the support substrate is peeled off from the second protective film forming layer 35 after the second protective film forming layer 35 is adhered to the back surface of the semiconductor wafer 10. Further, as the support substrate, the same resin film as the first and second base materials 21 and 31 can be used.

Similarly to the thermosetting resin layer 25, the second protective film forming layer 35 is preferably composed of a thermosetting resin composition containing a thermoplastic resin and a filler in addition to the thermosetting resin. Further, the thermosetting resin composition may further contain other additives such as a curing agent such as a curing accelerator, a coupling agent, a pigment, or a dye. In addition, the details of the materials, the blending amounts, and the like used in the second protective film forming layer 35 are the same as those of the thermosetting resin layer 25 described in the first embodiment, and thus the description thereof will be omitted. The second protective film forming layer 35 may be formed of the same material as the thermosetting resin layer 25, and may be formed of a different material. The thickness of the second protective film forming layer 35 is, for example, 5 to 500 μm, or preferably 10 to 100 μm.

In the engineering (A-1), the same as the first embodiment, from the protective film 25A peels off the first support piece 23 adhered to the surface of the semiconductor wafer 10 (engineering (III)).

[Engineering (A-2)]

After that, the second protective film forming layer 35 is heated and cured to form the second protective film 35A (Engineering (A-2)). The heating of the second protective film forming layer 35 is performed by, for example, forming a protective film 25A on the surface 10A side and a semiconductor wafer 10 having a second protective film forming layer 35 on the back surface 10B side. Internal, and heating is preferred. In addition, since the heating conditions in this process (A-2) are the same conditions as the heating conditions described in the process (II), description is abbreviate|omitted.

[Engineering (A-3)]

After the process (A-2), as shown in FIG. 8, the second support piece 33 is bonded to the back surface side of the semiconductor wafer 10, that is, the second protective film 35A. The configuration of the second support piece 33 is the same as that of the first embodiment. In other words, in FIG. 8, the second support sheet 33 is adhered to the second protective film 35A via the second adhesive layer 32, but the first substrate is omitted even if the second adhesive layer is omitted. 31 may be directly adhered to the second protective film 35A, and the first substrate 31 may be surface-treated or a layer other than the adhesive layer may be adhered to the second protective film 35A via the layer or the surface-treated surface. Also. Further, an intermediate layer may be further provided between the second adhesive layer 32 and the second base material 31.

[Engineering (IV)]

Then, the semiconductor wafer 10 on which the protective film 25A and the second protective film 35A are formed is diced and formed into a plurality of semiconductor wafers 15 as shown in FIG. In the embodiment (IV) of the present embodiment, the protective film 25A and the second protective film 35B are also cut at the same time as the semiconductor wafer 10, and are divided in accordance with the shape of the semiconductor wafer 15. Since the details of the cutting process are the same as those of the first embodiment, the description thereof will be omitted.

After the dicing process, in the same manner as in the first embodiment, after the semiconductor wafer 15 is picked up and mounted on the wafer mounting substrate or the like by reflow soldering, the semiconductor wafer 15 and the wafer mounting substrate 40 are sealed, for example, by a sealing resin. A gap is required for the fabrication of a semiconductor device.

In the second embodiment described above, as in the first embodiment, it is difficult to flow the thermosetting resin, and the bump 11 can be appropriately protected by the protective film 25A. Further, the back surface of the semiconductor wafer 15 can also be protected by the second protective film 35A.

Further, in the second embodiment described above, laser printing may be performed on the second protective film 35A or the second protective film forming layer 35 formed on the back surface of the wafer. By performing laser printing, various marks, characters, and the like can be displayed on the back side of the semiconductor wafer 15.

Further, in the second embodiment described above, the cured second protective film 35A is exposed between the engineering (A-2) and the engineering (A-3). Therefore, it is preferable to perform laser printing on the second protective film 35A exposed between the project (A-2) and the project (A-3). By the second protection of being hardened The film 35A is printed, and the printing property is good compared to the case where the second protective film forming layer 35 is printed before curing. Furthermore, since the semiconductor wafer 10 is printed before being sliced, it is possible to perform batch printing on a plurality of semiconductor wafers. Further, by performing laser printing on the exposed second protective film 35A, printing can be performed efficiently. However, even if the second protective film 35A or the second protective film forming layer 35 that is not exposed (that is, covered by the second supporting sheet 33) is not exposed through the second supporting sheet 33, the laser beam is irradiated. Laser printing is also available.

Further, in the second embodiment described above, although the aspects of the engineering (A-1), (A-2), and (A-3) are sequentially performed, even if it is replaced, the engineering is performed sequentially (A- 1), (A-3) and (A-2) are also available.

Specifically, the processes (I), (II), (A-1), and (III) are performed, and the protective film 25A is formed on the surface 10A, and the second protective film forming layer 35 is bonded to the back surface of the semiconductor wafer 10. 10B, next, the first support sheet 23 is peeled off from the protective film 25A. After that, the second support sheet 33 is further bonded to the upper surface of the second protective film forming layer 35 which is laminated on the back surface 10B before curing (Engineering (A-3)).

After the second support sheet 33 is bonded, the second protective film forming layer 35 is cured by heating to form the second protective film 35A (engineering (A-2), and then 10 semiconductor wafers are cut by dicing. The semiconductor device is fabricated by chip formation.

However, in the case where (A-1), (A-3), and (A-2) are sequentially performed, the second protective film 35A is formed by hardening, and is supported by the second. The sheet 33 is covered until it is not cut out until the end of the cutting. Therefore, the laser printing performed on the cured second protective film 35A is usually performed by irradiating a laser through the second supporting sheet 33.

Further, when (A-1), (A-3), and (A-2) are sequentially performed, the second support sheet 33 is adhered to the second protective film forming layer 35 in the engineering (A-2). It is heated in the state. Therefore, in the case of proceeding in this order, the second support sheet 33 preferably has heat resistance. In other words, the second base material 31 as the second support sheet 33 is preferably a substrate which is not melted or significantly shrunk by heating by the process (A-2).

In addition, the second support sheet 33 having heat resistance does not become high even when it is heated at a specific time. Specifically, it is preferable that the second support sheet 33 having heat resistance is such that the adhesion after heating by the engineering (A-2) is 10 N/25 mm or less. Further, the adhesion is preferably 0.3 to 9.8 N/25 mm, more preferably 0.5 to 9.5 N/25 mm. In addition, the method of measuring the adhesion force of the second support sheet is the same as that of the first support sheet, but is formed into a second protective film formation layer.

The adhesion strength of the second support sheet 33 after heating is relatively low, and it is difficult to cause peeling failure in which the semiconductor wafer 15 cannot be picked up when the semiconductor wafer 15 is picked up from the second support sheet 33.

The second support sheet 33 having heat resistance is provided with the second base material 31 and the second adhesive layer 32, and the second adhesive layer 32 is the same as the first adhesive layer 31, and is hardened by, for example, energy rays. A type of acrylic adhesive or a water-dispersible acrylic adhesive is preferably formed. By using these adhesives, it is possible to improve even after heating The second support piece 31 that enhances the adhesion force. Further, when any of the first and second adhesive layers 22 and 32 has heat resistance, it may be formed of a different adhesive, even if it is formed of a different adhesive.

Further, in the case of engineering in the order of (A-1), (A-3), and (A-2), heat hardening (engineering (A-2)) is not required to be performed before cutting, even after cutting. Also.

Specifically, in the same manner as described above, the works (I), (II), (A-1), (III), and (A-3) are sequentially performed, and thereafter, the process (A-2) is not performed, and the cutting is performed ( Engineering (IV)). Therefore, in this case, the dicing is performed on the semiconductor wafer 10 in which the cured protective film 25A is formed on the surface 10A and the second protective film forming layer 35 is laminated on the back surface 10B. Further, after the dicing, the second protective film forming layer 35 is heated and hardened (engineering (A-2)).

In this case, it is preferable that the heat curing of the second protective film forming layer 35 is performed after picking up, particularly by heating at the time of reflow.

After the pick-up, the second protective film forming layer 35 is cured, and the semiconductor wafer 15 (semiconductor wafer 10) is peeled off from the second support sheet 33 during heating. Therefore, the second support sheet 33 does not have heat resistance as described above, and there is no possibility that the adhesion force of the support sheet 33 becomes heavy due to heating by the process (A-2), and peeling failure occurs. Further, when the second protective film forming layer 35 is cured by heating at the time of reflow, since it is not necessary to separately provide a process for hardening the second protective film forming layer 35, the engineering can be simplified.

<Third embodiment>

Next, the third embodiment will be described as different from the second embodiment.

In the second embodiment, the thermosetting resin layer 25 and the second protective film forming layer 35 are heated and hardened at different timings. However, in the third embodiment, the heating is performed at the same time. And make it harden. That is, in the second embodiment described above, the engineering (II) and the engineering (A-2) are performed at different timings, and in the present embodiment, the engineering (II) and the engineering (A- 2) The whole batch is performed at the same timing.

Specifically, in the present embodiment, after the process (I) is performed (that is, after the first protective film forming film 20 is pasted on the semiconductor wafer), the processes (II) and (III) are not performed. The process (A-1) is performed, and the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer 10.

Then, as shown in FIG. 9, the thermosetting resin layer 25 and the second protective film forming layer 35 before curing are laminated on both surfaces, and the first support is laminated on the surface of the thermosetting resin layer 25. The semiconductor wafer 10 of the sheet 23 is heated to cure the thermosetting resin layer 25 and the second protective film forming layer 35 to form the protective film 25A and the second protective film 35A (Engineering (II) and Engineering (A-2) ). In the heating system, the thermosetting resin layer 25 and the first support sheet 23 are laminated on the surface, and the semiconductor wafer 10 having the second protective film forming layer 35 laminated on the back surface is disposed, for example, in a heating furnace. The heating method and the heating conditions are as described in the first embodiment described above. The engineering (II) of Ming is the same, and the description thereof is omitted.

Thereafter, in the same manner as in the second embodiment, the first support sheet 23 laminated on the protective film 25A is peeled off from the protective film 25A (Engineering (III)).

Next, in the item (A-3), the second support piece 33 is bonded to the upper surface of the second protective film 35A, and then cut in the process (IV). In the embodiment (IV) of the present embodiment, the semiconductor wafer 10 in which the cured protective film 25A and the second protective film 35A are formed on both sides is cut. After the dicing, even in the present embodiment, the semiconductor device was manufactured in the same manner as in the above-described respective embodiments.

Even in the third embodiment described above, as in the second embodiment, the bumps can be appropriately protected by the protective film 25A, and the back surface of the semiconductor wafer 15 can be protected by the second protective film 35A. In the present embodiment, since the thermosetting resin layer 25 and the second protective film forming layer 35 are simultaneously heated and hardened, the engineering can be simplified.

Further, when the thermosetting resin layer 25 and the second protective film forming layer 35 are thermally cured, heat shrinkage occurs, and warpage occurs in the semiconductor wafer 10 by heat shrinkage. However, in the present embodiment, the thermosetting resin layer 25 and the second protective film forming layer 35 are heat-hardened in a batch, and the force due to heat shrinkage during hardening is offset. Therefore, in the present embodiment, warpage of the wafer which occurs when the surface protective film resin layer 25 or the second protective film resin layer 35 is thermally cured can be reduced.

[Fourth embodiment]

Next, the fourth embodiment will be described as different from the first embodiment.

The manufacturing process of the fourth embodiment includes the items (B-1) and (B-2) in addition to the items (I) to (IV) described in the first embodiment.

(B-1) The second protective film forming film including the second support sheet and the second protective film forming layer provided on the second support sheet, so that the second protective film forming layer is a bonding surface, Engineering that fits on the back side of a semiconductor wafer

(B-2) Engineering for heating the second protective film forming layer to form the second protective film

In the second to third embodiments, the second protective film forming layer and the second supporting sheet are attached to the back side of the semiconductor wafer, but in the present embodiment, These films for forming a second protective film are adhered to the back side of the semiconductor wafer in a batch.

[Engineering (B-1)]

In the present embodiment, as in the first embodiment, after performing the processes (I) and (II) (that is, after performing thermal hardening to form the protective film 25A on the upper surface of the semiconductor wafer 10), in the semiconductor As shown in FIG. 11, the back surface 10B of the wafer (surface opposite to the surface of the bump) is bonded to the film 30 for forming a second protective film. As shown in FIG. 10, the second protective film forming film 30 includes a second support sheet 33 and is provided on the second support sheet 33. In the second protective film forming layer 35, the second protective film forming layer 35 is bonded to the back surface 10B of the semiconductor wafer 10.

Here, as a specific example of the second support piece 33, as shown in FIGS. 10 and 11, the second base material 31 and the second surface formed on one of the surfaces of the second base material 31 are provided. In the adhesive layer 32, the second protective film forming layer 35 is formed on the upper surface of the second adhesive layer 32. However, as described in the first embodiment, other configurations may be employed.

Further, as described in the first embodiment, the second support piece 33 is formed to be slightly larger than the second protective film forming layer 35 as shown in Figs. 10 and 11, so that the outer peripheral region can be followed by the annular plate. Wait for the support member 13.

However, the size of the second support piece 33 may be the same as that of the second protective film forming layer 35. When the size of the second support sheet 33 is the same as that of the second protective film forming layer 35, if either of the second protective film forming layer 35 and the second supporting sheet 33 is formed larger than the semiconductor wafer 10, In the peripheral region of the second protective film forming layer 35 that is next to the semiconductor wafer 10, an adhesive member such as a double-sided tape that is attached to the supporting member 13 may be provided.

After the step (B-1), the first support sheet 23 adhered to the surface of the semiconductor wafer 10 is peeled off from the protective film 25A (Engineering (III)) in the same manner as in the first embodiment.

[Engineering (B-2)]

After that, the second protective film forming layer 35 is heated and cured to form the second protective film 35A (Engineering (B-2)). Second protective film forming layer 35 For example, the semiconductor wafer 10 having the protective film 25A formed on the surface 10A side and the second protective film forming layer 35 on the back surface 10B side is disposed in a heating furnace or the like, and heating is preferably performed. . In addition, since the heating conditions in this item (B-2) are the same conditions as the heating conditions described in the item (III) of the first embodiment, the description thereof will be omitted.

Next, the semiconductor wafer 10 in which the protective film 25A and the second protective film 35A are formed on both sides is cut (Engineering (IV)). After the dicing, the semiconductor wafer 15 is picked up, and a semiconductor device is manufactured in the same manner as in the above embodiments.

In the present embodiment, when the second protective film forming layer 35 is heated and cured, the second support sheet 33 is adhered to the second protective film forming layer 35. Therefore, in the heating of the process (B-2), in order to prevent the adhesion force of the second support piece 33 from becoming heavy, the second support piece 33 preferably has heat resistance. Since the second support piece 33 having heat resistance is as described above, the description thereof will be omitted.

Even in the fourth embodiment described above, the bump 11 can be appropriately protected by the protective film 25A, and the back surface of the semiconductor wafer 10 (semiconductor wafer 15) can be protected by the second protective film 35A. Further, in the present embodiment, the second protective film forming layer 35 and the second supporting sheet 33 are adhered to the back surface of the semiconductor wafer 10 in a batch as the second protective film forming film 30, so that the engineering can be simplified.

In addition, in the description of the fourth embodiment described above, although the example of performing the engineering (B-2) before the cutting (engineering (IV)) is shown, It is the project (B-2) that does not have to be performed before cutting, even after cutting.

Specifically, after the engineering (I), (II), (B-1), and (III) are sequentially performed, the cutting (engineering (IV) is performed. That is, the cutting pair forms the protective film 25A on the surface 10A, and The semiconductor wafer 10 in which the second protective film forming film 30 (that is, the second protective film forming layer 35 and the second supporting sheet 33) is laminated on the back surface 10B is formed. After the dicing, heating is performed on the second protective film. The layer (35) is hardened by the layer 35. In this case, the curing of the second protective film forming layer 35 is the same as that of the second embodiment, and it is preferably carried out after picking up, especially by reflowing. It is preferred to heat and harden.

[Fifth Embodiment]

Next, the fifth embodiment will be described with a different point from the fourth embodiment.

In the fourth embodiment, the thermosetting resin layer 25 and the second protective film forming layer 35 are heated and hardened at different timings. However, in the fifth embodiment, the heating is performed at the same time. And make it harden. That is, in the fourth embodiment described above, the engineering (II) and the engineering (B-2) are performed at different timings, and in the present embodiment, the engineering (II) and the engineering (B-2) ) is carried out in batches at the same timing.

That is, in the present embodiment, after the construction (I), the works (B-1) are carried out without performing the works (II) and (III). Such as In the present embodiment, as shown in FIG. 12, the first protective film forming film 20 (that is, the thermosetting resin layer 25 and the first layer) is laminated on the surface 10A of the semiconductor wafer 10. In the support sheet 23), the second protective film forming film 30 (that is, the second protective film forming layer 35 and the second supporting sheet 33) is laminated on the back surface 10B.

Further, as shown in FIG. 12, the semiconductor wafer 10 laminated on both surfaces of the thermosetting resin layer 25 and the second protective film forming layer 35 before curing is heated to form a thermosetting resin layer. 25 and the second protective film forming layer 35 are cured to form the protective film 25A and the second protective film 35A (Engineering (II) and Engineering (B-2)).

After the heat curing, the first support sheet 23 adhered to the protective film 25A is peeled off from the protective film 25A (Engineering (III)). After that, the semiconductor wafer 10 of the second support sheet 33 is diced into a protective film 25A and a second protective film 35A, and the semiconductor wafer 15 having the protective film 25A and the second protective film 35A formed on both sides is obtained. (IV)). Next, the semiconductor wafer 15 is picked up, and a semiconductor device is manufactured in the same manner as in the above embodiments.

In the present embodiment, the second protective film forming layer 35 is heated and cured in a state in which the second supporting sheet 33 is adhered to the second protective film forming layer 35, and therefore, in addition to the first supporting sheet, It is also preferable that the second support piece 33 has heat resistance. Since the configuration of the second support sheet having heat resistance is as described above, the description thereof will be omitted.

Even in the fifth embodiment described above, the bump 11 and the wafer back surface can be appropriately protected, and the engineering can be simplified, and the semiconductor can be prevented from being generated. Warpage of wafers (semiconductor wafers).

Further, in the above-described respective embodiments, the process (III) in which the first support sheet 23 is peeled off is performed between the work (II) and the work (IV), and the timing at which it is carried out is not particularly limited. For example, in the second embodiment, although it is performed between the projects (A-1) and (A-2), it may be performed before the project (A-1), even at other timings.

Further, even in the third embodiment, the project (III) is performed even before the project (A-3), but even after the project (A-3), it is at the project (A-3) and the project ( IV) can also be implemented between.

Further, in the fourth embodiment, the work (III) is performed between the works (B-1) and (B-2), but as long as it is carried out between the works (II) and (IV), even It can be done before the project (B-1), even after the project (B-2).

Further, in the second to fifth embodiments described above, the back surface grinding of the semiconductor wafer is not particularly mentioned, but in the case of performing back grinding of the semiconductor wafer, the first embodiment is the same as the first embodiment. It can be implemented between Engineering (I) and Engineering (III), but it is better to carry out between Engineering (I) and Engineering (II). However, in the case where the second protective film forming layer 35 is adhered to the back surface 10B of the semiconductor wafer 10, the back surface grinding is performed before the adhesion of the second protective film forming layer 35.

In the third to fifth embodiments, the second protective film 35A or the second protective film forming layer 35 may be subjected to laser printing in the same manner as in the second embodiment. In addition, in the third embodiment, in engineering Between the (II) and the engineering (A-2), and the engineering (A-3), the cured second protective film 35A is exposed. Therefore, in the third embodiment, it is preferable to perform laser printing on the second protective film 35A exposed between the works (II) and (A-2) and the project (A-3).

[Examples]

Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited by the examples.

In the examples and the comparative examples, various physical properties were measured by the following methods, and the film for forming a first protective film was evaluated.

[Weight average molecular weight (Mw) of acrylic polymer]

The weight average molecular weight (Mw) of the acrylic polymer was measured by the GPC method under the following measurement conditions, and was determined in terms of standard polyethylene.

The high-speed GPC unit "HLC-8120GPC" manufactured by Tosoh Corporation is connected to the high-speed column "TSKguardcolumn H _XL -H", "TSKGel GMH _XL " and "TSKGelG2000 H _XL " (above, all are Dongcao Co., Ltd.). Measured by making). The column temperature was 40 ° C, the feed rate was 1.0 mL / min, and the detector was a refractive index detector.

[Continue force measurement]

First, a laminate comprising a release material/thermosetting resin layer/release material is prepared, and one of the release materials is peeled off from the laminate, and the temperature is at room temperature. The thermosetting resin layer is bonded to the surface of the first adhesive layer side of the support sheet, and the laminate (the first protective film formation film) composed of the first support sheet/thermosetting resin layer/release material is obtained. . The laminate was formed into a strip shape having a width of 25 mm and a length of 150 mm.

In addition, the respective members are the same as those used in the embodiment.

Then, the release material was peeled off from the long laminated body, and the thermosetting resin layer and the SUS surface were brought into contact with each other, and the SUS304 was adhered at 70 ° C using a 2 Kg rubber roller, and the illuminance was 200 mW/cm ² . The first support sheet was irradiated with ultraviolet rays under the conditions of a light amount of 160 mJ/cm ² . Then, the substrate to which the first support sheet was pasted was heated at 130 ° C for 2 hours, and the thermosetting resin layer was cured to form a protective film, and then the adhesion of the first support sheet to the protective film was measured. . Then, the force was measured by peeling off the first support sheet from the object at a peeling angle of 180° and a peeling speed of 300 mm/min under the conditions of a temperature of 23° C. and a humidity of 50% RH.

In addition, the measurement of the adhesion force is performed after the film for forming the first protective film is adhered to the semiconductor wafer, and before the thermosetting resin layer is heat-cured, the energy line is irradiated onto the first support sheet.

[Example 1]

In the case of propionic acid 2-hydroxyethyl group derived from hydroxyethyl group, the molar ratio is 80 mol%, 80 parts by mass of 2-ethylhexyl acrylate, and 2-hydroxyethyl acrylate. 20 parts by mass of the copolymer of the acrylate-based copolymer, added with 2-methylpropenyloxyethyl isocyanate 100 parts by mass of an energy ray-hardening acrylic polymer (weight average molecular weight (Mw): 600,000), 3 parts by mass of a photopolymerization initiator (product name: ESACURE KIP 150, manufactured by Siber Hegner Co., Ltd.), and toluene diisocyanate The energy ray-curable acrylic adhesive was adjusted by a crosslinking agent (product name: BHS-8515, manufactured by Toyo Ink Co., Ltd.) in an amount of 0.5 parts by mass. Under the conditions described below, the shear elastic modulus at 70 ° C of the energy ray-curable acrylic pressure-sensitive adhesive after ultraviolet irradiation was 40,000 Pa.

Next, on the surface of one of the base materials (product name: COSMOSHINE, manufactured by Toyobo Co., Ltd., thickness: 50 μm) composed of a film of ethylene terephthalate, it was set to contain urethane (methyl). The acrylate-curable material is an intermediate layer having a thickness of 200 μm which is formed by energy ray hardening, and an energy ray-curable acrylic adhesive is applied to the upper surface of the intermediate layer so as to have a thickness of 10 μm to form the first layer. Adhesive layer, the first support piece was obtained. The first adhesive layer of the first support sheet was irradiated with ultraviolet rays under the conditions of an illuminance of 150 mW/cm ² and a light amount of 300 mJ/cm ² to be cured.

Further, on the upper surface of the release material, an epoxy resin-based thermosetting resin composition was applied, and a thermosetting resin layer having a thickness of 100 μm was formed on the release material. The melt viscosity in the thermosetting resin layer (epoxy resin-based thermosetting resin composition) at 70 ° C is 5,000 Pa. S. Further, the shear strength (for Cu) of the thermosetting resin layer after curing (that is, the protective film) was 200 N/2 mm.

The thermosetting resin layered layer having the release material is on the first support sheet A film for forming a first protective film composed of a base material/intermediate layer/first adhesive layer/thermosetting resin layer/release material is obtained on the first adhesive layer.

After that, the first protective film forming film after peeling off the release material is bonded to a semiconductor wafer provided with bumps (bump height: 210 μm) so that the thermosetting resin layer becomes a bonding surface at 70° C. (WALTS Co., Ltd., size: 8 inch (20.32 cm), thickness: 730 μm) surface (engineering (I)). Then, the semiconductor wafer to which the first protective film formation film was bonded was heated at 130 ° C for 2 hours to cure the thermosetting resin layer to form a protective film (Engineering (II)). Thereafter, the first support sheet is peeled off from the protective film (Engineering (III)).

After the first support sheet was peeled off, the film thickness of the protective film was made uniform as a result of observing the formed protective film. Further, the front end of the bump protrudes from the protective film, and the bump neck is appropriately buried by the protective film. Therefore, in the first embodiment, the thermosetting resin layer is cured in a state in which the first support sheet is bonded, whereby the bump can be appropriately protected by the protective film having a uniform film thickness.

[Comparative Example 1]

Except for the replacement of the works (III) and (II), the other implementations were the same as in the first embodiment.

In the first comparative example, after the first protective film forming film is bonded to the surface of the semiconductor wafer (Engineering (I)), the first supporting sheet is peeled off from the thermosetting resin layer (Engineering (III) Next, the semi-conductive layer of the thermosetting resin layer was laminated on the surface under the same heating conditions as in Example 1. The body wafer is heated to form a protective film (Engineering (II)).

After observing the protective film formed after the formation of the protective film, it can be understood that in Comparative Example 1, the film thickness of the protective film was uneven, and the bump could not be appropriately protected.

[Example 2]

With respect to the first support sheet produced by the same method as in Example 1, the adhesion was measured in accordance with the above-described adhesion force measurement. The results are shown in Table 1.

[Example 3]

The same procedure as in Example 2 was carried out except that the blending amount of the crosslinking agent was changed to 1.5 parts by mass to prepare an energy ray-curable acrylic pressure-sensitive adhesive.

[Example 4]

The same procedure as in Example 2 was carried out except that the blending amount of the crosslinking agent was changed to 4.5 parts by mass to prepare an energy ray-curable acrylic pressure-sensitive adhesive.

[Example 5]

The same procedure as in Example 2 was carried out except that the blending amount of the crosslinking agent was changed to 7.5 parts by mass to prepare an energy ray-curable acrylic pressure-sensitive adhesive.

[Example 6]

In addition to the energy ray-curable acrylic polymer to be used, the amount of the hydroxyl group is changed to 80 mol% based on the hydroxyl group of the hydroxy group derived from hydroxyethyl group, and the addition ratio is 80 mol%. An energy-curable acrylic polymer obtained by adding 2-methylpropenyloxyethyl isocyanate to an acrylate-based copolymer of 80 parts by mass of dodecyl ester and 20 parts by mass of a copolymer of 2-hydroxyethyl acrylate The same procedure as in Example 2 was carried out except that the weight average molecular weight (Mw): 600,000.

[Example 7]

In addition to the energy ray-curable acrylic polymer to be used, the amount of the hydroxyl group is changed to 60 mol% based on the hydroxyl group of the hydroxy group derived from hydroxyethyl group, and the addition ratio is 60 mol%. An acrylate-based copolymer of 90 parts by mass of 2-ethylhexyl group and 10 parts by mass of a 2-hydroxyethyl acrylate copolymer, an energy ray-curable acrylic resin obtained by adding 2-methyl propylene oxirane ethyl isocyanate 100 parts by mass of a polymer (weight average molecular weight (Mw): 600,000), 3 parts by mass of a photopolymerization initiator, and 1 part by mass of a crosslinking agent, other than an energy ray-curable acrylic pressure-sensitive adhesive, The same was carried out as in the second embodiment.

[Reference Example 1]

In addition to the energy ray-curable acrylic polymer to be used, it is changed to a hydroxyl group of 100% based on the hydroxyl group derived from the acrylate to the hydroxy group. Then, 2-methyl propylene was added as a copolymer of 50 parts by mass of butyl acrylate, 20 parts by mass of methyl methacrylate, and 30 parts by mass of 2-hydroxyethyl acrylate as an addition ratio of 90 mol%. 100 parts by mass of the energy ray-curable acrylic polymer (weight average molecular weight (Mw): 600,000) obtained by oxyethyl isocyanate, 3 parts by mass of a photopolymerization initiator, and 1.0 part by mass of a crosslinking agent The same procedure as in Example 2 was carried out except that the obtained energy ray-curable acryl-based acid adhesive was used.

In the above Examples 2 to 7, the adhesive used in the first support sheet is an energy ray-curable acrylic adhesive, and the (meth)acrylate copolymer (A2) is polymerized from a specific monomer. According to this, it is possible to provide heat resistance that does not become heavy even if the first support sheet is heated. Therefore, even if the first support sheet is adhered to the thermosetting resin layer, the semiconductor wafer is heated and the thermosetting resin layer is cured, and the peelability of the first support sheet can be satisfactorily maintained. .

On the other hand, in the first example, when the first support sheet is heated, the adhesion force is increased, so that the semiconductor wafer is heated and the thermosetting property is obtained while the first support sheet is adhered to the thermosetting resin layer. When the resin layer is hardened, no The method maintains the peelability of the first support sheet satisfactorily, and it is expected that the workability is lowered as compared with the examples 2 to 7.

10‧‧‧Semiconductor wafer

10A‧‧‧ surface

10B‧‧‧Back

11‧‧‧Bumps

20‧‧‧First film for forming a protective film

21‧‧‧1st substrate

22‧‧‧1st adhesive layer

23‧‧‧1st support piece

25‧‧‧ thermosetting resin layer

Claims (8)

A method for producing a semiconductor device, comprising: (1) a film for forming a first protective film in which a first support sheet and a thermosetting resin layer are sequentially provided, and the thermosetting resin layer is used as a bonding surface a process of bonding a surface of a semiconductor wafer provided with a bump; (II) heating the thermosetting resin layer to harden it to form a protective film; (III) hardening the thermosetting resin layer And the formed protective film peels off the first support sheet; and (IV) works to cut the semiconductor wafer simultaneously with the protective film. The method of manufacturing a semiconductor device according to claim 1, further comprising: (A-1) a process of bonding a second protective film forming layer on a back surface of the semiconductor wafer; (A-2) heating the second protective film And forming a layer to form a second protective film; and (A-3) forming the second protective film forming layer on the back surface of the semiconductor wafer or bonding the second supporting sheet to the upper surface of the second protective film engineering. The method of manufacturing a semiconductor device according to claim 1, further comprising: (B-1) comprising a second support sheet and being provided in the second support The second protective film forming film of the second protective film forming layer on the sheet is bonded to the back surface of the semiconductor wafer so that the second protective film forming layer is a bonding surface; and (B-2 The process of heating the second protective film forming layer to form the second protective film. The method for producing a semiconductor device according to claim 2, wherein the thermosetting resin layer and the second protective film forming layer are simultaneously heated to thermally harden the layers. The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the first support sheet has a bonding force of 10 N/25 mm after heating in the item (II). The method of manufacturing a semiconductor device according to any one of claims 1 to 5, wherein the first support sheet includes a first base material and a first adhesive provided on a surface of one of the first base materials In the layer, the thermosetting resin layer is provided on the upper surface of the first adhesive layer. The method of manufacturing a semiconductor device according to claim 6, wherein the temperature of the thermosetting resin layer is 1 × 10 ² at a temperature at which the film for forming the first protective film is bonded to the semiconductor wafer. Pa. S above 2 × 10 ⁴ Pa. When S is not full, the shear modulus of the first adhesive layer is 1 × 10 ³ Pa or more and 2 × 10 ⁶ Pa or less at the temperature at which the film for forming the first protective film is bonded to the semiconductor wafer. . The method of manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the thermosetting resin layer has a thickness of 0.01 to 0.99 times the height of the bump.