TW201730960A - Substrate mounting table and substrate processing apparatus - Google Patents
Substrate mounting table and substrate processing apparatus Download PDFInfo
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- TW201730960A TW201730960A TW105134301A TW105134301A TW201730960A TW 201730960 A TW201730960 A TW 201730960A TW 105134301 A TW105134301 A TW 105134301A TW 105134301 A TW105134301 A TW 105134301A TW 201730960 A TW201730960 A TW 201730960A
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- elastic sheet
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- 238000012545 processing Methods 0.000 title claims abstract description 66
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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Abstract
Description
本發明，係關於載置基板的基板載置台及使用了該基板載置台的基板處理裝置。 The present invention relates to a substrate mounting table on which a substrate is placed and a substrate processing apparatus using the substrate mounting table.
在平板顯示器(FPD)的製造過程中，係對被處理基板進行蝕刻、濺鍍、CVD(化學氣相沉積)等的處理。 In the manufacturing process of a flat panel display (FPD), the substrate to be processed is subjected to etching, sputtering, CVD (Chemical Vapor Deposition) or the like.
作為實施像這樣之處理的基板處理裝置，係已知例如如下述者：在處理容器內配置一對平行平板電極(上部及下部電極)，將被處理基板載置於具有下部電極功能之金屬製的基板載置台，於將腔室內保持為真空的狀態下，對電極的至少一方施加高頻，在電極間形成高頻電場，藉由該高頻電場形成處理氣體之電漿，對被處理基板實施電漿處理。 As a substrate processing apparatus that performs such a process, for example, a pair of parallel plate electrodes (upper and lower electrodes) are disposed in a processing container, and the substrate to be processed is placed on a metal having a lower electrode function. The substrate mounting table applies a high frequency to at least one of the electrodes while maintaining a vacuum in the chamber, forms a high-frequency electric field between the electrodes, and forms a plasma of the processing gas by the high-frequency electric field to process the substrate to be processed. Perform plasma treatment.
作為像這樣之基板處理裝置的基板載置台，係大多使用具有使調溫媒體流通以進行調溫之第1構件與設置於其上之第2構件的層積構造者(例如專利文獻1)。 In the substrate mounting table of the above-described substrate processing apparatus, a laminated structure having a first member for circulating a temperature-regulating medium and a second member to be temperature-regulated is used (for example, Patent Document 1).
作為像這樣之層積構造的基板載置台，在第1構件與第2構件使用異種之金屬的情況下，例如有以鋁構成設置有溫度調整機構的第1構件，以不鏽鋼構成第2構件的情形。又，為了防止腐蝕等，亦有在第2構件之表面形成陶瓷皮膜的情形。在像這樣的情況下，因加工特性或陶瓷皮膜，在第1構件與第2構件的各表面會產生起伏。在由該些異種金屬所構成的構件間之起伏的程度不同時，係無法使構件彼此充分密接，在該些之間形成微小間隙，熱傳導則在其部分變得不充分，導致熱傳導變差且不均勻，以使基板載置台表面的溫度有時發生差異。 When a different type of metal is used for the first member and the second member in the substrate mounting table having the laminated structure, for example, a first member provided with a temperature adjusting mechanism made of aluminum and a second member made of stainless steel are used. situation. Further, in order to prevent corrosion or the like, a ceramic film may be formed on the surface of the second member. In such a case, undulations occur on the respective surfaces of the first member and the second member due to the processing characteristics or the ceramic film. When the degree of undulation between the members composed of the dissimilar metals is different, the members cannot be sufficiently adhered to each other, and a minute gap is formed therebetween, and heat conduction is insufficient in the portion thereof, resulting in deterioration of heat conduction and The unevenness is such that the temperature of the surface of the substrate stage sometimes differs.
基板載置面之溫度的差異，雖係以使連結兩構件之連結螺栓的鎖緊扭力上升或使連結螺栓之根數增加的方式，可進行改善，但在採用了該些方式時，係維修性會惡化，又，在使連結螺栓之根數增加時，係亦進一步產生因真空密封等而導致構造複雜化且裝置成本上升的問題。 The difference in the temperature of the substrate mounting surface can be improved by increasing the locking torque of the connecting bolts connecting the two members or increasing the number of the connecting bolts. However, when these methods are employed, the maintenance is performed. In addition, when the number of the connecting bolts is increased, the structure is complicated by the vacuum sealing or the like, and the cost of the apparatus is increased.
另一方面，專利文獻2、3，係揭示有使作為熱傳導性薄片之凝膠狀聚合物或碳薄片介設於金屬構件間，以提高兩構件之熱傳導性的技術。但是，由於凝膠狀聚合物，係一旦變形時，則難以回復，因此，無法重複使用且維修性差。又，由於碳薄片，係無法追隨微小間隙，因此，無法充分填滿微小間隙而導致熱傳導不充分且不均勻，難以消解基板載置台表面之溫度的差異。又，碳薄片的情況下，亦有來自切斷面之揚塵的問題。因此，該些技 術亦難以採用作為解決上述問題的技術。 On the other hand, Patent Documents 2 and 3 disclose a technique in which a gel-like polymer or a carbon sheet as a thermally conductive sheet is interposed between metal members to improve the thermal conductivity of the two members. However, since the gel-like polymer is difficult to recover once it is deformed, it cannot be reused and has poor maintainability. Moreover, since the carbon flakes cannot follow the minute gap, the small gap cannot be sufficiently filled, and the heat conduction is insufficient and uneven, and it is difficult to eliminate the difference in temperature of the surface of the substrate stage. Further, in the case of a carbon sheet, there is also a problem of dust from the cut surface. Therefore, these techniques It is also difficult to adopt techniques as a solution to the above problems.
〔專利文獻1〕日本特開2001-267303號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-267303
〔專利文獻2〕日本特開2008-171899號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-171899
〔專利文獻3〕日本特開2000-299288號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2000-299288
因此，本發明，係以提供一種即便在第1構件及第2構件間存在有微小間隙，亦不會造成維修性的惡化或裝置成本的增加，並可確保從第1構件朝第2構件之良好且均勻之熱傳導的基板載置台及使用了該基板載置台的基板處理裝置為課題。 Therefore, according to the present invention, it is possible to provide a small gap between the first member and the second member, and it is possible to prevent deterioration of maintainability or increase in equipment cost, and to secure the second member from the first member to the second member. A substrate mounting table that performs good and uniform heat conduction and a substrate processing apparatus using the substrate mounting table are the subject matter.
為了解決上述課題，本發明之第1觀點，係提供一種基板載置台，其係在處理容器內，對被處理基板施予處理的基板處理裝置中，載置基板，該基板載置台，其特徵係，具有：金屬製之第1構件，形成為基底；金屬製之第2構件，設置於前述第1構件上；基板載置部，載置設置於前述第2構件之表面的基板；調溫手段，設置於前述第1構件；彈性體薄片，介設於前述第1構件與前述 第2構件之間，以由有機材料構成的彈性體所構成；及緊固構件，在介設有前述彈性體薄片的狀態下，緊固前述第1構件及前述第2構件的至少外周，前述彈性體薄片，係在藉由前述緊固構件緊固了前述第1構件與前述第2構件之際，填埋形成於前述第1構件及前述第2構件之間的微小間隙。 In order to solve the above problems, a first aspect of the present invention provides a substrate mounting table in which a substrate is placed in a substrate processing apparatus for processing a substrate to be processed, and the substrate mounting table is characterized. The first member made of metal is formed as a base, the second member made of metal is provided on the first member, and the substrate is placed on a substrate provided on the surface of the second member. Provided in the first member; the elastic sheet is interposed between the first member and the aforementioned The second member is composed of an elastic body made of an organic material, and the fastening member fastens at least the outer circumference of the first member and the second member in a state in which the elastic sheet is interposed. The elastic sheet is filled with a minute gap formed between the first member and the second member when the first member and the second member are fastened by the fastening member.
適用於前述第1構件及前述第2構件由異種之金屬所構成的情形。更亦可具有：高頻電源，連接於前述第1構件，用以供給高頻電力。前述調溫手段，係可具有：調溫媒體流路，設置於前述第1構件的內部；及調溫媒體供給部，對調溫媒體流路供給調溫媒體。前述基板載置部，係亦可具有用以靜電吸附基板的靜電夾具。 It is suitable for the case where the first member and the second member are made of a different metal. Further, it may have a high frequency power source connected to the first member for supplying high frequency power. The temperature adjustment means may include a temperature adjustment medium flow path provided inside the first member, and a temperature adjustment medium supply unit that supplies the temperature adjustment medium to the temperature adjustment medium flow path. The substrate mounting portion may have an electrostatic chuck for electrostatically adsorbing the substrate.
前述彈性體薄片，係楊氏係數為1~40MPa為佳，構成前述彈性體薄片的材料，係矽氧橡膠或氟橡膠為佳。 The elastomer sheet preferably has a Young's modulus of 1 to 40 MPa, and the material constituting the elastomer sheet is preferably a silicone rubber or a fluorine rubber.
前述基板，係構成矩形狀，前述第1構件、前述第2構件及前述彈性體薄片，係構成與基板相對應的矩形狀為佳。在該情況下，相對於前述第1構件及前述第2構件之長邊之前述彈性體薄片之長邊的比率，及相對於前述第1構件及前述第2構件之短邊之前述彈性體薄片之短邊的比率，係皆大於0且小於1為佳，又，0.3以上0.9以下為較佳。 The substrate has a rectangular shape, and the first member, the second member, and the elastic sheet preferably have a rectangular shape corresponding to the substrate. In this case, the ratio of the long sides of the elastic sheets to the long sides of the first member and the second member, and the elastic sheets of the short sides of the first member and the second member The ratio of the short sides is preferably greater than 0 and less than 1, and more preferably 0.3 or more and 0.9 or less.
前述彈性體薄片，係在將初始的厚度設成為t0且將介設於前述第1構件及前述第2構件而擠壓後的厚 度設成為t1時，由t1/t0×100(%)所表示的擠壓量是50~70%為佳。 The elastic sheet is thicker after the initial thickness is set to t0 and is pressed by the first member and the second member. When the degree is t1, the amount of extrusion represented by t1/t0 × 100 (%) is preferably 50 to 70%.
前述第1構件及前述第2構件，係亦可設成為如下述之構成：該些外周部及內側部份藉由緊固構件而緊固，分別使前述彈性體薄片介設於藉由該些緊固構件而緊固之際所形成的複數個微小間隙。 The first member and the second member may be configured such that the outer peripheral portion and the inner portion are fastened by a fastening member, and the elastic sheet is interposed therebetween. A plurality of minute gaps formed when the fastening member is fastened.
本發明之第2觀點，係提供一種基板處理裝置，其特徵係，具備有：處理容器，用以對被處理基板施予處理；上述第1觀點之基板載置台，在前述處理容器內載置基板；處理氣體供給機構，對前述處理容器內供給處理氣體；處理氣體導入部，將從前述處理氣體供給機構所供給的前述處理氣體導入至前述處理容器內；及排氣機構，對前述處理容器內進行排氣。 According to a second aspect of the present invention, a substrate processing apparatus includes: a processing container for processing a substrate to be processed; and a substrate mounting table according to the first aspect, placed in the processing container a processing gas supply mechanism that supplies a processing gas to the processing chamber, a processing gas introduction unit that introduces the processing gas supplied from the processing gas supply unit into the processing container, and an exhaust mechanism that processes the processing container Exhaust inside.
根據本發明，由於是使以由有機材料構成之彈性體所構成的彈性體薄片介設於第1構件與第2構件之間，在藉由緊固構件緊固了第1構件及第2構件之際，填埋彈性體薄片形成於第1構件及第2構件之間的微小間隙，因此，即便在第1構件及第2構件間存在有微小間隙，亦不會造成維修性的惡化或裝置成本的增加，並可確保從第1構件朝第2構件之良好且均勻之熱傳導。因此，可使基板載置台之表面的溫度在短時間內穩定化，並且可使基板載置台之表面的溫度均勻。又，由於彈性體薄片， 係彈性體且具有回復性，因此，可重複使用，該點對於維修性亦良好。 According to the invention, the elastic sheet composed of the elastic body made of the organic material is interposed between the first member and the second member, and the first member and the second member are fastened by the fastening member. In addition, since the landfill elastic sheet is formed in a small gap between the first member and the second member, even if there is a small gap between the first member and the second member, the maintenance property is not deteriorated or the device is not damaged. The increase in cost and the good and uniform heat transfer from the first member to the second member can be ensured. Therefore, the temperature of the surface of the substrate stage can be stabilized in a short time, and the temperature of the surface of the substrate stage can be made uniform. Also, due to the elastomer sheet, It is an elastomer and is recyclable, so it can be reused, which is also good for maintainability.
1‧‧‧電漿蝕刻裝置(基板處理裝置) 1‧‧‧ Plasma etching device (substrate processing device)
2‧‧‧腔室(處理容器) 2‧‧‧Case (processing container)
4‧‧‧基板載置台 4‧‧‧Substrate mounting table
5‧‧‧絕緣構件 5‧‧‧Insulating components
6‧‧‧第1構件 6‧‧‧1st component
7‧‧‧第2構件 7‧‧‧2nd component
8‧‧‧靜電夾具 8‧‧‧Electrostatic fixture
9‧‧‧側壁絕緣構件 9‧‧‧Sidewall insulation members
11‧‧‧噴頭 11‧‧‧ sprinkler
15‧‧‧處理氣體供給管 15‧‧‧Processing gas supply pipe
18‧‧‧處理氣體供給源 18‧‧‧Processing gas supply
19‧‧‧排氣管 19‧‧‧Exhaust pipe
20‧‧‧排氣裝置 20‧‧‧Exhaust device
21‧‧‧搬入搬出口 21‧‧‧ Move in and out
25‧‧‧高頻電源 25‧‧‧High frequency power supply
30，30′‧‧‧彈性體薄片 30,30'‧‧‧ Elastomer sheet
31‧‧‧外側螺栓 31‧‧‧Outer bolt
32‧‧‧冷媒流路 32‧‧‧Refrigerant flow path
33‧‧‧冷卻器 33‧‧‧cooler
37‧‧‧直流電源 37‧‧‧DC power supply
40‧‧‧控制部 40‧‧‧Control Department
41‧‧‧內側螺栓 41‧‧‧Inside bolt
G‧‧‧基板 G‧‧‧Substrate
〔圖1〕表示使用了本發明之第1實施形態之基板載置台之基板處理裝置之一例即電漿蝕刻裝置的剖面圖。 FIG. 1 is a cross-sectional view showing a plasma etching apparatus which is an example of a substrate processing apparatus of a substrate stage according to the first embodiment of the present invention.
〔圖2〕用以說明彈性體薄片之形狀及擠壓量的圖。 Fig. 2 is a view for explaining the shape and the amount of extrusion of the elastic sheet.
〔圖3〕表示在本發明之第1實施形態中，不使彈性體薄片介設於第1構件及第2構件之間時之基板載置台表面之溫度分布例的示意圖。 (Fig. 3) is a schematic view showing an example of temperature distribution on the surface of the substrate stage when the elastic sheet is not interposed between the first member and the second member in the first embodiment of the present invention.
〔圖4〕表示在本發明之第1實施形態中，使彈性體薄片介設於第1構件及第2構件之間時之基板載置台表面之溫度分布例的示意圖。 (Fig. 4) is a schematic view showing an example of the temperature distribution of the surface of the substrate stage when the elastic sheet is interposed between the first member and the second member in the first embodiment of the present invention.
〔圖5〕表示針對未設置與設置有彈性體薄片的情形，實際測定了關於基板載置台之表面溫度之時間變化之結果的圖。 Fig. 5 is a view showing the result of temporal change in the surface temperature of the substrate stage, in the case where the elastic sheet is not provided and provided.
〔圖6〕表示本發明之第2實施形態之基板載置台的剖面圖。 Fig. 6 is a cross-sectional view showing a substrate stage according to a second embodiment of the present invention.
〔圖7〕表示在本發明之第2實施例中，不使彈性體薄片介設第1構件及第2構件之間時及介設於第1構件及第2構件之間時之基板載置台表面之溫度分布例的示意圖。 [Fig. 7] shows a substrate stage when the elastic sheet is not interposed between the first member and the second member, and when interposed between the first member and the second member, in the second embodiment of the present invention. A schematic diagram of an example of the temperature distribution of the surface.
以下，參閱附加圖面，說明關於本發明之實施形態。另外，在所有的圖式中，共同的部分，係附上共用的參考符號。 Hereinafter, embodiments of the present invention will be described with reference to additional drawings. In addition, in all the drawings, common parts are attached with common reference symbols.
首先，說明關於第1實施形態。 First, the first embodiment will be described.
圖1，係表示使用了本發明之第1實施形態之基板載置台之基板處理裝置之一例即電漿蝕刻裝置的剖面圖。 1 is a cross-sectional view showing a plasma etching apparatus which is an example of a substrate processing apparatus of a substrate stage according to a first embodiment of the present invention.
如圖1所示，該電漿蝕刻裝置1，係構成為對FPD用之矩形狀玻璃基板(以下，僅記載為「基板」)G進行蝕刻之電容耦合型平行平板電漿蝕刻裝置。作為FPD，係例示有液晶顯示器(LCD)、電致發光(Electro Luminescence；EL)顯示器、電漿顯示器面板(PDP)等。 As shown in FIG. 1, the plasma etching apparatus 1 is a capacitive coupling type parallel plate plasma etching apparatus which etches a rectangular glass substrate (hereinafter, simply referred to as "substrate") G for FPD. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.
電漿蝕刻裝置1，係具備有作為收容被處理基板即基板G之處理容器的腔室2。腔室2，係例如由表面經耐酸鋁處理(陽極氧化處理)後的鋁所構成，且與基板G的形狀相對應地形成為四角筒形狀。 The plasma etching apparatus 1 is provided with a chamber 2 as a processing container for accommodating the substrate G as a substrate to be processed. The chamber 2 is made of, for example, aluminum whose surface is treated with an alumite treatment (anodizing treatment), and is formed in a quadrangular cylindrical shape in accordance with the shape of the substrate G.
在腔室2內的底壁，係設置有形成矩形狀的基板載置台4，該基板載置台4，係經由以氧化鋁等之絕緣性陶瓷所構成的絕緣構件5，載置基板G，並且構成具有下部電極的功能。基板載置台4的詳細構造，係如後述。 In the bottom wall of the chamber 2, a substrate mounting table 4 having a rectangular shape is formed, and the substrate mounting table 4 is placed on the substrate G via an insulating member 5 made of an insulating ceramic such as alumina. It has a function of having a lower electrode. The detailed structure of the substrate stage 4 will be described later.
在腔室2的上部或上壁，係以與基板載置台4相對向的方式，設置有形成矩形狀的噴頭11，該噴頭11，係對腔室2內供給處理氣體，並且具有上部電極的功能。噴頭11，係在內部形成有使處理氣體擴散的氣體擴散空間12，並且在下面或與基板載置台4的相對面形成有吐出處理氣體的複數個吐出孔13。該噴頭11，係接地狀態，與基板載置台4一起構成一對平行平板電極。 A nozzle 11 having a rectangular shape is formed on the upper portion or the upper wall of the chamber 2 so as to face the substrate stage 4, and the head 11 supplies a processing gas to the chamber 2 and has an upper electrode. Features. The head 11 has a gas diffusion space 12 for diffusing the processing gas therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on the lower surface or on the surface opposite to the substrate stage 4. The head 11 is grounded and forms a pair of parallel plate electrodes together with the substrate stage 4.
在噴頭11的上面，係設置有氣體導入口14，在該氣體導入口14，係連接有處理氣體供給管15，該處理氣體供給管15，係經由閥16及質流控制器17，連接有處理氣體供給源18。從處理氣體供給源18，係供給有蝕刻用之處理氣體。作為處理氣體，係可使用鹵素系之氣體、O2氣體、Ar氣體等，通常在該領域所使用的氣體。 A gas introduction port 14 is provided on the upper surface of the shower head 11, and a process gas supply pipe 15 is connected to the gas introduction port 14, and the process gas supply pipe 15 is connected via a valve 16 and a mass flow controller 17. The gas supply source 18 is processed. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a halogen-based gas, an O 2 gas, an Ar gas, or the like can be used, and a gas generally used in the field is used.
在腔室2的側壁下部，係連接有排氣管19，在該排氣管19，係連接有排氣裝置20，並且設置有未圖示的壓力調整閥。排氣裝置20，係具備有渦輪分子泵等的真空泵，藉此，構成為可對腔室2內進行排氣而抽真空至預定真空度。在腔室2的側壁，係形成有搬入搬出基板G用之搬入搬出口21，並且設置有對該搬入搬出口21進行開關的閘閥22，以構成為在搬入搬出口21之開放時，藉由未圖示的搬送手段，進行基板G對腔室2之搬入搬出。 An exhaust pipe 19 is connected to a lower portion of the side wall of the chamber 2, and an exhaust device 20 is connected to the exhaust pipe 19, and a pressure regulating valve (not shown) is provided. The exhaust device 20 is provided with a vacuum pump such as a turbo molecular pump, and is configured to evacuate the inside of the chamber 2 to evacuate the vacuum to a predetermined degree of vacuum. In the side wall of the chamber 2, a loading/unloading port 21 for loading and unloading the substrate G is formed, and a gate valve 22 for opening and closing the loading/unloading port 21 is provided, and is configured to be opened when the loading/unloading port 21 is opened. The transport means (not shown) carries in and out the substrate 2 to the chamber 2.
又，電漿蝕刻裝置1，係具備有控制部40，該控制部40，係具有用以控制電漿蝕刻裝置1之各構成 部的微處理器(電腦)。 Further, the plasma etching apparatus 1 is provided with a control unit 40 having various components for controlling the plasma etching apparatus 1. Department of microprocessor (computer).
其次，說明關於基板載置台4的詳細構造。 Next, the detailed structure of the substrate stage 4 will be described.
基板載置台4，係具有：第1構件6，成為設置於絕緣構件5上的基座；第2構件7，設置於第1構件6上；靜電夾具8，設置於第2構件7之表面的基板載置部；及側壁絕緣構件9，覆蓋第1構件6、第2構件7及靜電夾具8的側壁。第1構件6、第2構件7及靜電夾具8，係形成與基板G之形狀相對應的矩形狀，基板載置台4的整體形成為四角板狀或柱狀。第1構件6及第2構件7皆為金屬製，該些，係由異種之金屬所構成。例如第1構件6，係由鋁所構成，第2構件7，係由不鏽鋼所構成。在第1構件6與第2構件7之間，係介裝有彈性體薄片30，第1構件6與第2構件7，係外周藉由作為緊固構件的複數個外周螺栓31而緊固。 The substrate stage 4 includes a first member 6 and a pedestal provided on the insulating member 5, a second member 7 provided on the first member 6, and a static chuck 8 provided on the surface of the second member 7. The substrate mounting portion and the side wall insulating member 9 cover the side walls of the first member 6, the second member 7, and the electrostatic chuck 8. The first member 6, the second member 7, and the electrostatic chuck 8 are formed in a rectangular shape corresponding to the shape of the substrate G, and the entire substrate mounting table 4 is formed in a square plate shape or a columnar shape. Both the first member 6 and the second member 7 are made of metal, and these are made of a different type of metal. For example, the first member 6 is made of aluminum, and the second member 7 is made of stainless steel. The elastic sheet 30 is interposed between the first member 6 and the second member 7, and the first member 6 and the second member 7 are fastened by a plurality of outer peripheral bolts 31 as fastening members.
在第1構件6，係設置有使作為調溫媒體之冷卻媒體流通的冷媒流路32，可從調溫媒體供給部即冷卻器33，將冷卻媒體循環供給至冷媒流路32。藉此，將第1構件6調溫至預定溫度，從第1構件6經由彈性體薄片30而熱傳導至第2構件7，經由第2構件7，基板G則被冷卻。 The first member 6 is provided with a refrigerant flow path 32 through which a cooling medium as a temperature control medium flows, and the cooling medium 33 can be circulated and supplied to the refrigerant flow path 32 from the temperature control medium supply unit. Thereby, the first member 6 is tempered to a predetermined temperature, and is thermally conducted from the first member 6 to the second member 7 via the elastic sheet 30, and the substrate G is cooled via the second member 7.
又，在第1構件6，係連接有用以供給高頻電力的供電線23，在該供電線23，係連接有匹配器24及高頻電源25。從高頻電源25，將例如13.56MHz的高頻電力供給至第1構件6，在與具有上部電極之功能的噴頭11 之間形成高頻電場，生成處理氣體的電漿。 Further, the first member 6 is connected to a power supply line 23 for supplying high-frequency power, and the power supply line 23 is connected to the matching unit 24 and the high-frequency power source 25. From the high-frequency power source 25, high-frequency power of, for example, 13.56 MHz is supplied to the first member 6, and the head 11 having the function of the upper electrode A high frequency electric field is formed between them to generate a plasma of the processing gas.
第2構件7，係上部構成凸狀，在其凸狀部形成有靜電夾具8。靜電夾具8，係具有：本體34，由絕緣體所構成；及吸附電極35，沿著基板G的面內方向(亦即水平方向)，設置於本體34的內部。吸附電極35，係可採用板狀、膜狀、格子狀、網狀等各種形態。在吸附電極35，係經由供電線36連接有直流電源37，可對吸附電極35施加直流電壓。朝吸附電極35之供電，係可由開關38進行開關。而且，朝吸附電極35施加直流電壓，藉此，基板G藉由靜電吸附力而吸附。 The second member 7 has a convex shape on the upper portion, and an electrostatic chuck 8 is formed on the convex portion. The electrostatic chuck 8 has a main body 34 and is made of an insulator, and an adsorption electrode 35 is provided inside the main body 34 along the in-plane direction of the substrate G (that is, in the horizontal direction). The adsorption electrode 35 can be in various forms such as a plate shape, a film shape, a lattice shape, or a mesh shape. A DC power source 37 is connected to the adsorption electrode 35 via a power supply line 36, and a DC voltage can be applied to the adsorption electrode 35. The power supply to the adsorption electrode 35 can be switched by the switch 38. Further, a DC voltage is applied to the adsorption electrode 35, whereby the substrate G is adsorbed by the electrostatic adsorption force.
側壁絕緣構件9與靜電夾具8之本體34，係由氧化鋁等的絕緣性陶瓷所構成。 The side wall insulating member 9 and the main body 34 of the electrostatic chuck 8 are made of an insulating ceramic such as alumina.
在基板載置台4，係對於基板載置台4之上面(亦即靜電夾具8之上面)可突出/沒入地設置有用以進行基板G之收授的複數個升降銷(未圖示)，基板G之收授，係對於從基板載置台4之上面朝上方突出之狀態的升降銷而進行。又，在基板G被載置於基板載置台4的狀態下，可將用以熱傳導的傳熱氣體供給至基板G與基板載置台4之間。作為傳熱氣體，係可適當地使用熱傳導性高的He氣體。 In the substrate mounting table 4, a plurality of lifting pins (not shown) for guiding the substrate G are provided so as to be protruded/indented on the upper surface of the substrate mounting table 4 (that is, the upper surface of the electrostatic chuck 8), and the substrate is provided. The transfer of G is performed on the lift pin in a state of being protruded upward from the upper surface of the substrate stage 4 . Further, in a state where the substrate G is placed on the substrate stage 4, heat transfer gas for heat conduction can be supplied between the substrate G and the substrate stage 4. As the heat transfer gas, He gas having high thermal conductivity can be suitably used.
彈性體薄片30，係構成與基板載置台4之形狀相對應的矩形狀，以由有機材料構成的彈性體所構成。因此，彈性體薄片30，係易彈性變形，且在藉由外周螺栓31緊固了第1構件6及第2構件7的外周部之際，比 較容易被擠壓，因應第1構件6的上面及第2構件7的形狀而變形。因此，填埋形成於第1構件6及第2構件7之間的微小間隙，以密接於第1構件6及第2構件7。又，由於彈性體薄片30，係彈性體，因此，在解除了外周螺栓31的緊固之際，便回復成原本的形狀。 The elastic sheet 30 is formed in a rectangular shape corresponding to the shape of the substrate stage 4, and is composed of an elastic body made of an organic material. Therefore, the elastic sheet 30 is easily elastically deformed, and when the outer peripheral portions of the first member 6 and the second member 7 are fastened by the outer peripheral bolts 31, It is easier to be pressed, and is deformed in accordance with the shape of the upper surface of the first member 6 and the second member 7. Therefore, a small gap formed between the first member 6 and the second member 7 is filled in order to be in close contact with the first member 6 and the second member 7. Further, since the elastic sheet 30 is an elastic body, when the outer peripheral bolt 31 is released, the original shape is restored.
如此一來，由於彈性體薄片30，係填埋第1構件6及第2構件7之間的微小間隙，以密接於第1構件6及第2構件7，因此，第1構件6及第2構件7之間的熱傳導變得良好且均勻，可使基板載置台4之表面(基板載置面)的溫度在短時間內均勻。又，由於彈性體薄片30，係在變形後回復至原來的形狀，因此，可重複使用。 In this manner, since the elastic sheet 30 fills the minute gap between the first member 6 and the second member 7 and is in close contact with the first member 6 and the second member 7, the first member 6 and the second member 2 are The heat conduction between the members 7 becomes good and uniform, and the temperature of the surface (substrate mounting surface) of the substrate stage 4 can be made uniform in a short time. Further, since the elastic sheet 30 returns to its original shape after being deformed, it can be reused.
如此一來，從填埋微小間隙的觀點來看，彈性體薄片30的楊氏係數較低者為佳，1~40MPa的範圍為佳。較佳的係，1~10MPa的範圍。又，彈性體薄片30，係操作使用性、耐熱性、耐寒性、耐化學性良好為佳。從像這樣的觀點來看，作為構成彈性體薄片30的材料，適當地使用矽氧橡膠或氟橡膠。該些，係楊氏係數皆為1~40MPa的範圍，一般所使用者，係1~10MPa，具有適當的楊氏係數，且彈性力良好。又，該些，係操作使用性亦良好，關於使用溫度範圍，係矽氧橡膠為-70~200℃，氟橡膠為-10~230℃，耐熱性、耐寒性皆亦優異。 As a result, from the viewpoint of filling a small gap, the Young's modulus of the elastic sheet 30 is preferably lower, and the range of 1 to 40 MPa is preferable. Preferably, it is in the range of 1 to 10 MPa. Further, the elastomer sheet 30 is preferably excellent in workability, heat resistance, cold resistance, and chemical resistance. From such a viewpoint, as the material constituting the elastic sheet 30, a silicone rubber or a fluororubber is suitably used. In these cases, the Young's modulus is in the range of 1 to 40 MPa, and the user is generally 1 to 10 MPa, has an appropriate Young's modulus, and has good elastic force. Moreover, these are also excellent in workability, and the use temperature range is -70 to 200 ° C for the silicone rubber and -10 to 230 ° C for the fluorine rubber, and the heat resistance and the cold resistance are also excellent.
由於在基板載置台4中，係將高頻(RF)電力施加至第1構件6，因此，從確保表層效果所致之RF路徑的觀點來看，如圖2(a)、(b)所示，使彈性體薄 片30之各邊的長度短於基板載置台4之第1構件6及第2構件7之各邊的長度。又，如圖2(b)所示，在將彈性體薄片30之長邊的長度設成為a、短邊的長度設成為b、第1構件6及第2構件7之長邊的長度設成為c、短邊的長度設成為d時，從充分地確保表層效果所致之RF路徑的觀點來看，設成為a/c<1、b/d<1為佳，又，設成為a/c≦0.9、b/d≦0.9為較佳。又，為了使第1構件6與第2構件7之間的熱傳導更良好且均勻，係設成為a/c>0、b/d>0為佳，又，設成為a/c≧0.3、b/d≧0.3為較佳。亦即，相對於第1構件6及第2構件7之長邊之彈性體薄片30之長邊的比率，及相對於第1構件6及第2構件7之短邊之彈性體薄片30之短邊的比率，係皆0.3以上0.9以下為佳。 Since the high-frequency (RF) power is applied to the first member 6 in the substrate stage 4, from the viewpoint of securing the RF path due to the surface layer effect, as shown in FIGS. 2(a) and 2(b) Show that the elastomer is thin The length of each side of the sheet 30 is shorter than the length of each side of the first member 6 and the second member 7 of the substrate stage 4. Further, as shown in Fig. 2(b), the length of the long side of the elastic sheet 30 is set to a, the length of the short side is set to b, and the length of the long side of the first member 6 and the second member 7 is set to c. When the length of the short side is set to d, it is preferable to set a/c<1 and b/d<1 from the viewpoint of sufficiently ensuring the RF path due to the surface layer effect, and it is set to a/c. ≦0.9, b/d≦0.9 is preferred. Further, in order to make the heat conduction between the first member 6 and the second member 7 more favorable and uniform, it is preferable to set a/c>0 and b/d>0, and to set a/c≧0.3, b. /d≧0.3 is preferred. That is, the ratio of the long sides of the elastic sheets 30 with respect to the long sides of the first member 6 and the second member 7 and the short length of the elastic sheets 30 with respect to the short sides of the first member 6 and the second member 7 are short. The ratio of the sides is preferably 0.3 or more and 0.9 or less.
又，彈性體薄片30，雖係藉由擠壓的方式，填埋第1構件6與第2構件7的微小間隙，但如圖2(c)所示，在將初始厚度設成為t0、擠壓後的厚度設成為t1時，當由t1/t0×100(%)所表示的擠壓量為較少時，則有變得難以填埋第1構件6與第2構件7的微小間隙之傾向。又，當擠壓量過多時，則導致外周螺栓31之緊固力過大。因此，彈性體薄片30的擠壓量，係50%以上70%以下為佳。又，彈性體薄片30的初始厚度t0，係0.3~0.5mm為佳。彈性體薄片30為0.3mm以下時，係無法充分填埋微小間隙，又，當比0.5mm厚時，則外周螺栓31之緊固力會變得過大。 Further, the elastic sheet 30 is filled with a small gap between the first member 6 and the second member 7 by pressing, but as shown in Fig. 2(c), the initial thickness is set to t0 and squeezed. When the thickness after the pressing is set to t1, when the amount of pressing represented by t1/t0 × 100 (%) is small, it is difficult to fill the minute gap between the first member 6 and the second member 7. tendency. Further, when the amount of pressing is excessive, the fastening force of the outer peripheral bolt 31 is excessively large. Therefore, the amount of extrusion of the elastic sheet 30 is preferably 50% or more and 70% or less. Further, the initial thickness t0 of the elastic sheet 30 is preferably 0.3 to 0.5 mm. When the elastic sheet 30 is 0.3 mm or less, the small gap cannot be sufficiently filled, and when it is thicker than 0.5 mm, the fastening force of the outer peripheral bolt 31 becomes excessive.
其次，說明關於如以上般所構成之電漿蝕刻裝置1中的處理動作。以下的處理動作，係在控制部40的控制下執行。 Next, the processing operation in the plasma etching apparatus 1 configured as described above will be described. The following processing operations are executed under the control of the control unit 40.
首先，藉由排氣裝置20，對腔室2內進行排氣使成為預定壓力，開放閘閥22，藉由未圖示之搬送手段，從搬入搬出口21搬入基板G，在使未圖示之升降銷上升的狀態下，於其上方接收基板G，使升降銷下降，藉此，使基板G載置於基板載置台4上。使搬送手段從腔室2退避後，關閉閘閥22。 First, the inside of the chamber 2 is exhausted to a predetermined pressure by the exhaust device 20, and the gate valve 22 is opened, and the substrate G is carried in from the loading/unloading port 21 by a conveying means (not shown), and is not shown. When the lift pin is raised, the substrate G is received above the lifter pin, and the lift pin is lowered, whereby the substrate G is placed on the substrate stage 4. After the conveyance means is retracted from the chamber 2, the gate valve 22 is closed.
在該狀態下，藉由壓力調整閥，將腔室2內的壓力調整至預定真空度，並且從處理氣體供給源18經由處理氣體供給管15及噴頭11，對腔室2內供給處理氣體。 In this state, the pressure in the chamber 2 is adjusted to a predetermined degree of vacuum by the pressure regulating valve, and the processing gas is supplied into the chamber 2 from the processing gas supply source 18 via the processing gas supply pipe 15 and the head 11.
而且，從高頻電源25經由匹配器24，對基板載置台4的第1構件6施加高頻(RF)電力，使高頻電場產生於作為下部電極的基板載置台4與作為上部電極的噴頭11之間，以使腔室2內的處理氣體電漿化。此時，從直流電源37對靜電夾具8之吸附電極35施加直流電壓，藉此，基板G，係經由電漿，藉由庫倫力被吸附固定於基板載置台4之表面的基板載置面。 Further, high-frequency (RF) power is applied to the first member 6 of the substrate stage 4 from the high-frequency power source 25 via the matching unit 24, and a high-frequency electric field is generated in the substrate stage 4 as the lower electrode and the head as the upper electrode. Between 11 to plasma the process gas in the chamber 2. At this time, a DC voltage is applied from the DC power source 37 to the adsorption electrode 35 of the electrostatic chuck 8 , whereby the substrate G is adsorbed and fixed to the substrate mounting surface on the surface of the substrate mounting table 4 by the Coulomb force via the plasma.
在該狀態下，藉由腔室2內的電漿，進行基板G的蝕刻處理。 In this state, the etching process of the substrate G is performed by the plasma in the chamber 2.
此時，從冷卻器33使預定溫度之冷卻媒體循環供給至第1構件6的冷媒流路32，對基板載置台4進 行調溫，以控制基板G的溫度。 At this time, the cooling medium of the predetermined temperature is circulated from the cooler 33 to the refrigerant flow path 32 of the first member 6, and the substrate mounting table 4 is advanced. The temperature is adjusted to control the temperature of the substrate G.
然而，由於基板載置台4的第1構件6與第2構件7，係藉由對金屬材料進行加工而製作，因此，在其表面會產生起伏。例如，在一邊的長度為1m以上時，起伏的製作誤差為0.1mm左右。又，因在第2構件7的表面設置有靜電夾具8，故在第2構件7的表面亦產生起伏。由於因第1構件6與第2構件7為異種金屬而加工後之精度不同，或僅在第2構件7的表面設置有靜電夾具8等，因此，在第1構件6與第2構件7的表面會產生起伏的差。因此，如以往，當以直接螺栓緊固第1構件6與第2構件7時，則在構件間會產生微小間隙。由於微小間隙內為真空，因此，微小間隙大的部分，係熱傳導性差，相反地，微小間隙小的部分，係熱傳導性良好。因此，熱傳導性因微小間隙而變差，且基板載置台4的表面溫度至穩定為止相當費時，並且在第1構件6與第2構件7之間，不均勻地存在有微小間隙時，係從第1構件6朝第2構件7的熱傳導變得不均勻，基板載置台4之表面(基板載置面)的面內溫度會產生差異。 However, since the first member 6 and the second member 7 of the substrate stage 4 are produced by processing a metal material, undulations are generated on the surface thereof. For example, when the length of one side is 1 m or more, the manufacturing error of the undulation is about 0.1 mm. Further, since the electrostatic chuck 8 is provided on the surface of the second member 7, undulations also occur on the surface of the second member 7. Since the precision of the first member 6 and the second member 7 being different metals is different, or the electrostatic chuck 8 or the like is provided only on the surface of the second member 7, the first member 6 and the second member 7 are provided. The surface will produce a difference in undulations. Therefore, as in the related art, when the first member 6 and the second member 7 are fastened by direct bolts, minute gaps are formed between the members. Since the inside of the minute gap is a vacuum, the portion having a large minute gap is inferior in thermal conductivity, and conversely, the portion having a small gap is excellent in thermal conductivity. Therefore, the thermal conductivity is deteriorated by the minute gap, and the surface temperature of the substrate stage 4 is stable until time is long, and when there is a small gap between the first member 6 and the second member 7 unevenly, The heat conduction of the first member 6 to the second member 7 becomes uneven, and the in-plane temperature of the surface (substrate mounting surface) of the substrate stage 4 varies.
例如，如圖3(a)般，中央部之微小間隙的間隔大時之基板載置台4之表面的溫度，係在螺栓緊固的周緣部(邊緣)變高，在間隙大的中央部(中央)變低，在中間部(中間)成為中間溫度。而且，間隙大的中央部，係熱傳導差且溫度至穩定為止相當費時，又，面內溫度會產生差異。相反地，如圖3(b)般，中央部之微小 間隙小時之基板載置台4之表面的溫度，係在螺栓緊固的周緣部(邊緣)變高，在間隙小的中央部(中央)亦變高，在中間部(中間)成為與圖3(a)之情形相同的中間溫度。如此一來，圖3(b)的情形雖亦小於圖3(a)，但面內溫度仍產生相異。 For example, as shown in Fig. 3 (a), the temperature of the surface of the substrate stage 4 when the interval between the minute gaps in the center portion is large is increased at the peripheral portion (edge) of the bolt fastening, and is at the center portion where the gap is large ( The center is lowered, and the middle portion (middle) becomes the intermediate temperature. Further, the central portion having a large gap is time-consuming in that heat conduction is poor and the temperature is stable, and the in-plane temperature is different. On the contrary, as shown in Figure 3(b), the central part is tiny. The temperature of the surface of the substrate stage 4 having a small gap is increased in the peripheral portion (edge) of the bolt fastening, and is also increased in the center portion (center) where the gap is small, and is shown in FIG. 3 in the middle portion (middle portion). a) The same intermediate temperature. As a result, although the case of FIG. 3(b) is smaller than that of FIG. 3(a), the in-plane temperature still differs.
載置有基板G之基板載置台4之表面溫度之差異大的情形，係在基板處理時之蝕刻速率的分布產生不均勻。又，間隙大的部分，係溫度至穩定為止相當費時，從而發生對處理時間的影響。又，藉由基板載置台4，例如如圖3(a)的情形與圖3(b)的情形般，在第1構件6及第2構件7之起伏(彎曲)具有個體差時，係溫度分布因裝置而有所不同，成為裝置間差的要因。 When the difference in surface temperature of the substrate stage 4 on which the substrate G is placed is large, the distribution of the etching rate at the time of substrate processing is uneven. Further, the portion having a large gap is time-consuming until the temperature is stabilized, so that the influence on the processing time occurs. Further, by the substrate mounting table 4, for example, as in the case of FIG. 3(a) and FIG. 3(b), when the undulations (bending) of the first member 6 and the second member 7 have individual differences, the temperature is set. The distribution varies depending on the device and becomes a cause of the difference between the devices.
基板載置台4之表面(基板載置面)之溫度的差異，雖係以使連結兩構件之螺栓的鎖緊扭力上升或使螺栓之根數增加的方式，可進行改善，但在採用了該些方式時，係維修性會惡化，又，在使連結螺栓之根數增加時，係亦進一步產生裝置成本上升的問題。 The difference in temperature between the surface of the substrate mounting table 4 (substrate mounting surface) can be improved by increasing the locking torque of the bolts connecting the two members or increasing the number of bolts. In some cases, the maintainability is deteriorated, and when the number of the connection bolts is increased, the problem of an increase in the cost of the apparatus is further caused.
因此，本實施形態，係在基板載置台4中，使彈性體薄片30介設於第1構件6與第2構件7之間。彈性體薄片30，係構成與基板載置台4之形狀相對應的矩形狀，以由有機材料構成的彈性體(典型，係橡膠)所構成。因此，彈性體薄片30，係易彈性變形，且在藉由外周螺栓31緊固了第1構件6及第2構件7的外周部之際，比較容易被擠壓，因應第1構件6的上面及第2構件 7的形狀而變形。因此，填埋形成於第1構件6及第2構件7之間的微小間隙，以密接於第1構件6及第2構件7。又，由於彈性體薄片30，係彈性體，因此，在解除了外周螺栓31的緊固之際，便回復成原本的形狀。 Therefore, in the present embodiment, the elastic sheet 30 is interposed between the first member 6 and the second member 7 in the substrate stage 4 . The elastic sheet 30 is formed in a rectangular shape corresponding to the shape of the substrate stage 4, and is composed of an elastic body (typically rubber) made of an organic material. Therefore, the elastic sheet 30 is easily elastically deformed, and when the outer peripheral portions of the first member 6 and the second member 7 are fastened by the outer peripheral bolts 31, they are relatively easily pressed, in response to the upper surface of the first member 6. And the second member The shape of 7 is deformed. Therefore, a small gap formed between the first member 6 and the second member 7 is filled in order to be in close contact with the first member 6 and the second member 7. Further, since the elastic sheet 30 is an elastic body, when the outer peripheral bolt 31 is released, the original shape is restored.
如此一來，在由外周螺栓31緊固了第1構件6與第2構件7之際，由於彈性體薄片30變形，填埋該些之間的微小間隙，以密接於第1構件6及第2構件7，因此，該彈性體薄片30具有緩衝層的功能，第1構件6與第2構件7之間的熱傳導會變得均勻，可使基板載置台4之基板載置面的溫度成為均勻。又，由於微小間隙之部分的熱傳導變得良好，因此，亦可縮短基板載置台4之表面的溫度至穩定化為止的時間。又，即便第1構件6與第2構件7之起伏(彎曲)具有偏差，亦可藉由彈性體薄片30密接於兩構件的方式，使基板載置台4之表面(基板載置面)之溫度的個體差消失。例如，如圖3(a)的情形與圖3(b)的情形般，即便第1構件6及第2構件7之起伏(彎曲)為不同的情形，亦如圖4(a)及圖4(b)般，可藉由介設有彈性體薄片30的方式，使兩者之基板載置台4之表面的溫度成為均勻，而且，使兩者之表面溫度本身的值或至溫度穩定化為止的時間成為同等。 When the first member 6 and the second member 7 are fastened by the outer peripheral bolt 31, the elastic sheet 30 is deformed, and a small gap therebetween is filled in so as to be in close contact with the first member 6 and the first member. Since the elastic member sheet 30 has the function of a buffer layer, the heat conduction between the first member 6 and the second member 7 becomes uniform, and the temperature of the substrate mounting surface of the substrate mounting table 4 can be made uniform. . Further, since the heat conduction in the portion of the minute gap is good, the time until the temperature of the surface of the substrate stage 4 is stabilized can be shortened. Further, even if the undulation (bending) of the first member 6 and the second member 7 are different, the temperature of the surface (substrate mounting surface) of the substrate stage 4 can be made by adhering the elastic sheet 30 to both members. The individual difference disappeared. For example, as in the case of FIG. 3(a) and the case of FIG. 3(b), even if the undulations (bending) of the first member 6 and the second member 7 are different, as shown in FIGS. 4(a) and 4 (b) In general, the temperature of the surface of the substrate mounting table 4 can be made uniform by interposing the elastic sheet 30, and the value of the surface temperature itself or the temperature can be stabilized. Time becomes equal.
又，由於彈性體薄片30，係彈性體且具有回復性，因此，可重複使用，並可確保良好的維修性。 Further, since the elastic sheet 30 is an elastic body and has resilience, it can be reused and can ensure good maintainability.
如此一來，根據本實施形態，使彈性體薄片30介設於第1構件6與第2構件7之間，藉此，可從第1 構件6朝第2構件7良好且均勻地進行熱傳導，且可使基板載置台4之表面的溫度在短時間內穩定化，並且使基板載置台4之表面的溫度成為均勻。因此，不需進行緊固螺栓之過度的扭力提高或螺栓之根數的增加，伴隨於此，不會造成維修性的惡化或裝置成本的增加。又，由於彈性體薄片30，係可重複使用，因此，該點對於維修性亦良好。 As described above, according to the present embodiment, the elastic sheet 30 is interposed between the first member 6 and the second member 7, whereby the first one can be obtained from the first The member 6 performs heat conduction to the second member 7 in a good and uniform manner, and the temperature of the surface of the substrate stage 4 can be stabilized in a short time, and the temperature of the surface of the substrate stage 4 can be made uniform. Therefore, it is not necessary to increase the excessive torque of the fastening bolt or increase the number of bolts, and accordingly, the deterioration of maintainability or the increase in the cost of the apparatus is not caused. Moreover, since the elastic sheet 30 can be reused, this point is also good for maintainability.
為了藉由彈性體薄片30輕易地填埋第1構件6與第2構件7的微小間隙，彈性體薄片30的楊氏係數較低者為佳，1~40MPa的範圍為佳。較佳的係，1~10MPa。又，彈性體薄片30，係操作使用性、耐熱性、耐寒性良好為佳。當考慮該些時，作為彈性體薄片30，係適當地使用矽氧橡膠或氟橡膠。該些，係楊氏係數皆為1~40MPa的範圍，一般所使用者，係1~10MPa，具有適當的楊氏係數，且彈性力良好。又，該些，係操作使用性亦良好，關於使用溫度範圍，係矽氧橡膠為-70~200℃，氟橡膠為-10~230℃，耐熱性、耐寒性皆亦優異。 In order to easily fill the small gap between the first member 6 and the second member 7 by the elastic sheet 30, the Young's modulus of the elastic sheet 30 is preferably lower, and the range of 1 to 40 MPa is preferable. A preferred system is 1 to 10 MPa. Moreover, it is preferable that the elastic sheet 30 is excellent in workability, heat resistance, and cold resistance. When considering these, as the elastomer sheet 30, a silicone rubber or a fluororubber is suitably used. In these cases, the Young's modulus is in the range of 1 to 40 MPa, and the user is generally 1 to 10 MPa, has an appropriate Young's modulus, and has good elastic force. Moreover, these are also excellent in workability, and the use temperature range is -70 to 200 ° C for the silicone rubber and -10 to 230 ° C for the fluorine rubber, and the heat resistance and the cold resistance are also excellent.
在設置如記載於專利文獻2般之散熱凝膠片(凝膠狀聚合物)以作為介設於第1構件6與第2構件7之間的薄片時，雖係由於易變形，且熱傳導率高至2.1W/mK，因此，可達成良好且均勻的熱傳導，但由於並非為彈性體，因此，當一旦變形時，則無法回復，難以重複使用，維修性差且操作使用性亦差。又，當使用金屬材料作為介設於第1構件6與第2構件7之間的薄片時，則 熱傳導率高，例如鋁(A5052)或不鏽鋼(SUS304)，係分別為238W/mK、16.7W/mK，相接於第1構件6與第2構件7之部分的熱傳導性，雖係變得非常高，但金屬材料，係楊氏係數非常高，例如鋁或不鏽鋼分別為70000MPa、193000MPa，難以變形。因此，無法填埋第1構件6與第2構件7之間的微小間隙，且無法確保熱傳導的均勻性。使用了記載於專利文獻3之碳薄片的情形亦相同。 When the heat-dissipating gel sheet (gel polymer) as described in Patent Document 2 is provided as a sheet interposed between the first member 6 and the second member 7, the heat transfer rate is easily deformed. As high as 2.1 W/mK, good and uniform heat conduction can be achieved, but since it is not an elastomer, when it is deformed, it cannot be recovered, it is difficult to reuse, and the maintainability is poor and the workability is also poor. Further, when a metal material is used as the sheet interposed between the first member 6 and the second member 7, The thermal conductivity is high, for example, aluminum (A5052) or stainless steel (SUS304) is 238 W/mK and 16.7 W/mK, respectively, and the thermal conductivity of the first member 6 and the second member 7 is in contact with each other. High, but the metal material, the Young's coefficient is very high, for example, aluminum or stainless steel is 70,000 MPa, 193,000 MPa, respectively, difficult to deform. Therefore, the small gap between the first member 6 and the second member 7 cannot be filled, and the uniformity of heat conduction cannot be ensured. The same applies to the case of using the carbon flakes described in Patent Document 3.
作為彈性體薄片30，最佳的矽氧橡膠或氟橡膠，係熱傳導率分別為0.24W/mK、0.23W/mK，小於散熱凝膠片或金屬材料的熱傳導率。但是，在本實施形態中，彈性體薄片30，係密接於第1構件6及第2構件7，在真空狀態下，使熱傳導率低的微小間隙消失，以確保熱傳導的均勻性者，並不要求太大的熱傳導率。該值0.24W/mK本身，係高於使用來作為傳熱氣體之He氣體的熱傳導率即0.14W/mK，且為密接於第1構件6及第2構件7而足以確保良好且均勻之熱傳導的值。 As the elastomer sheet 30, the optimum silicone rubber or fluororubber has a thermal conductivity of 0.24 W/mK and 0.23 W/mK, respectively, which is smaller than the thermal conductivity of the heat-dissipating gel sheet or the metal material. However, in the present embodiment, the elastic sheet 30 is in close contact with the first member 6 and the second member 7, and the micro-gap having a low thermal conductivity disappears in a vacuum state to ensure the uniformity of heat conduction. Too much thermal conductivity is required. The value of 0.24 W/mK itself is higher than the thermal conductivity of He gas used as the heat transfer gas, that is, 0.14 W/mK, and is close to the first member 6 and the second member 7 to ensure good and uniform heat conduction. Value.
另外，鐵氟龍(註冊商標)等的樹脂，雖係與矽氧橡膠或氟橡膠相同地，由有機材料所構成且操作使用性良好，但由於楊氏係數高至500MPa，因此，無法填埋第1構件6及第2構件7的微小間隙，進而難以使用來作為彈性體薄片30。 In addition, the resin such as Teflon (registered trademark) is composed of an organic material and is excellent in handling properties similarly to the silicone rubber or the fluororubber. However, since the Young's modulus is as high as 500 MPa, it cannot be landfilled. The minute gap between the first member 6 and the second member 7 is further difficult to use as the elastic sheet 30.
又，在基板載置台4中，係由於彈性體薄片30之各邊的長度較基板載置台4之第1構件6及第2構 件7之各邊的長度短，因此，在施加了施加至第1構件6的高頻(RF)電力時，可確保表層效果所致之RF路徑。又，在將彈性體薄片30之長邊的長度設成為a、短邊的長度設成為b、第1構件6及第2構件7之長邊的長度設成為c、短邊的長度設成為d時，藉由設成為a/c<1、b/d<1，較佳的係a/c≦0.9、b/d≦0.9的方式，可充分地確保表層效果所致之RF路徑。又，藉由設成為a/c>0、b/d>0，較佳的係a/c≧0.3、b/d≧0.3的方式，可提升第1構件6與第2構件7之間之熱傳導的均勻性。 Further, in the substrate stage 4, the length of each side of the elastic sheet 30 is higher than the first member 6 and the second structure of the substrate stage 4 Since the length of each side of the member 7 is short, when the high frequency (RF) power applied to the first member 6 is applied, the RF path due to the surface layer effect can be secured. Further, the length of the long side of the elastic sheet 30 is set to a, the length of the short side is set to b, the length of the long side of the first member 6 and the second member 7 is c, and the length of the short side is set to d. In the case of a/c<1, b/d<1, and preferably a/c≦0.9 and b/d≦0.9, the RF path due to the surface layer effect can be sufficiently ensured. Further, by providing a/c>0, b/d>0, and preferably a/c≧0.3, b/d≧0.3, the relationship between the first member 6 and the second member 7 can be improved. Uniformity of heat transfer.
又，彈性體薄片30，雖係藉由擠壓的方式，填埋第1構件6與第2構件7的微小間隙，但在將初始厚度設成為t0、擠壓後的厚度設成為t1時，將由t1/t0×100(%)所表示的擠壓量設成為50%以上、70%以下為佳。以將擠壓量設成為50%以上的方式，變得易填埋第1構件6與第2構件7的微小間隙，又，藉由將擠壓量設成為70%以下的方式，不需過度地增加外周之螺栓的緊固力。又，彈性體薄片30的初始厚度t0，係0.3~0.5mm為佳。只要為該範圍，則彈性體薄片30可充分地填埋微小空間，且螺栓之緊固力不會變得過大。 Further, the elastic sheet 30 is filled with a small gap between the first member 6 and the second member 7 by pressing, but when the initial thickness is set to t0 and the thickness after extrusion is set to t1, The amount of extrusion represented by t1/t0 × 100 (%) is preferably 50% or more and 70% or less. By setting the amount of extrusion to 50% or more, it is easy to fill a small gap between the first member 6 and the second member 7, and by setting the amount of extrusion to 70% or less, it is not necessary to excessively Increase the tightening force of the bolts on the outer circumference. Further, the initial thickness t0 of the elastic sheet 30 is preferably 0.3 to 0.5 mm. As long as it is in this range, the elastic sheet 30 can sufficiently fill the minute space, and the fastening force of the bolt does not become excessive.
其次，針對未設置與設置有彈性體薄片30的情形，實際測定了關於基板載置台4之表面溫度之時間變化的結果。圖5(a)、(b)，係表示使電漿點火後之基板載置台表面溫度之時間變化的圖，且為表示周緣部(邊緣)、中央部(中央)、中間部(中間)的溫度者；圖5 (a)，係表示圖3(a)所示之中央部之微小間隙的間隔大且未設置彈性體薄片的情形；圖5(b)，係表示圖4(a)所示之中央部之微小間隙的間隔大且設置有彈性體薄片的情形。 Next, as a result of the fact that the elastic sheet 30 was not provided and provided, the temporal change with respect to the surface temperature of the substrate stage 4 was actually measured. 5(a) and 5(b) are diagrams showing temporal changes in the surface temperature of the substrate stage after the plasma is ignited, and showing the peripheral portion (edge), the central portion (center), and the intermediate portion (middle). Temperature; Figure 5 (a) shows a case where the interval between the minute gaps in the center portion shown in Fig. 3(a) is large and the elastic sheet is not provided; and Fig. 5(b) shows the center portion shown in Fig. 4(a). The case where the interval of the minute gap is large and the elastic sheet is provided.
未設置彈性體薄片的情形，係如圖5(a)所示，由於第1構件與第2構件之間的熱傳導差且熱傳導不均勻，因此，溫度至穩定為止的時間長且溫度穩定後的面內均勻性亦差。相對於此，設置有彈性體薄片的情形，係如圖5(b)所示，由於第1構件與第2構件之間的熱傳導良好，而且熱傳導均勻，因此，溫度至穩定為止的時間縮短且溫度穩定後的面內均勻性亦良好。 When the elastic sheet is not provided, as shown in FIG. 5( a ), since the heat conduction between the first member and the second member is poor and the heat conduction is uneven, the time until the temperature is stable and the temperature is stable is obtained. In-plane uniformity is also poor. On the other hand, when the elastic sheet is provided, as shown in FIG. 5( b ), since the heat conduction between the first member and the second member is good and the heat conduction is uniform, the time until the temperature is stabilized is shortened. The in-plane uniformity after temperature stabilization is also good.
其次，說明關於第2實施形態。 Next, the second embodiment will be described.
圖6，係表示本發明之第1實施形態之基板載置台的剖面圖。本實施形態，係用以載置大型基板之基板載置台的例子，第1構件6及第2構件7之間，係作為緊固構件，除了外周螺栓31以外，在內側部份具有來自第1構件6之背面側的內側螺栓41，第1構件6及第2構件7，係由外周螺栓31與內側螺栓41而緊固。 Fig. 6 is a cross-sectional view showing a substrate stage according to a first embodiment of the present invention. This embodiment is an example of a substrate mounting table on which a large substrate is placed. The first member 6 and the second member 7 are used as fastening members, and the inner portion has the first portion from the first portion. The inner bolt 41 on the back side of the member 6 and the first member 6 and the second member 7 are fastened by the outer bolt 31 and the inner bolt 41.
此時，當由外周螺栓31與內側螺栓41直接緊固第1構件6與第2構件7時，則在緊固部以外的部分有發生微小間隙的情形。例如，如圖7(a)所示，在外周螺栓31與內側螺栓41之間的部分及內側螺栓41與內 側螺栓41之間的部分會產生微小間隙。在該情況下，外周螺栓31及內側螺栓41的緊固部，係熱傳導良好，其間之微小間隙的部分，係熱傳導變差。因此，基板載置台4的表面溫度，係在與緊固部相對應的部分變高，與微小間隙相對應的部分變低。 At this time, when the first member 6 and the second member 7 are directly fastened by the outer circumferential bolt 31 and the inner bolt 41, a slight gap may occur in a portion other than the fastening portion. For example, as shown in FIG. 7(a), the portion between the outer peripheral bolt 31 and the inner bolt 41 and the inner bolt 41 and the inner portion A small gap is generated in a portion between the side bolts 41. In this case, the fastening portions of the outer peripheral bolt 31 and the inner bolt 41 are excellent in heat conduction, and the portion of the minute gap therebetween is deteriorated in heat conduction. Therefore, the surface temperature of the substrate stage 4 becomes higher in a portion corresponding to the fastening portion, and a portion corresponding to the minute gap becomes lower.
因此，本實施形態，係分別將彈性體薄片30′部分地插入至基板載置台4的構成構件即產生第1構件6及第2構件7之間之微小間隙的部分，亦即外周螺栓31與內側螺栓41之間的部分及內側螺栓41與內側螺栓41之間的部分。彈性體薄片30′，係構成為與第1實施形態的彈性體薄片30相同。 Therefore, in the present embodiment, the elastic sheet 30' is partially inserted into the constituent member of the substrate placing table 4, that is, the portion where the minute gap between the first member 6 and the second member 7 is generated, that is, the outer peripheral bolt 31 and A portion between the inner bolts 41 and a portion between the inner bolts 41 and the inner bolts 41. The elastic sheet 30' is configured in the same manner as the elastic sheet 30 of the first embodiment.
如此一來，在使彈性體薄片30′介設於產生第1構件6及第2構件7之間之微小間隙的部分之狀態下，藉由外周螺栓31及內側螺栓41緊固第1構件6及第2構件7，藉此，形成為彈性體薄片30′密接於第1構件6及第2構件7的狀態。 In this manner, the first member 6 is fastened by the outer peripheral bolt 31 and the inner bolt 41 in a state where the elastic sheet 30' is interposed in a portion where the minute gap between the first member 6 and the second member 7 is generated. The second member 7 is formed in a state in which the elastic sheet 30' is in close contact with the first member 6 and the second member 7.
因此，該彈性體薄片30′具有緩衝層的功能，且第1構件6與第2構件7之間的熱傳導變得均勻，如圖7(b)所示，可使基板載置台4之基板載置面的溫度成為均勻。又，由於微小間隙之部分的熱傳導變得良好，因此，亦可縮短基板載置台4之表面的溫度至穩定化為止的時間。 Therefore, the elastic sheet 30' has a function as a buffer layer, and heat conduction between the first member 6 and the second member 7 becomes uniform, and as shown in FIG. 7(b), the substrate of the substrate stage 4 can be carried. The temperature of the surface is made uniform. Further, since the heat conduction in the portion of the minute gap is good, the time until the temperature of the surface of the substrate stage 4 is stabilized can be shortened.
此時，各部分之相對於各邊的長度之與其部分相對應之彈性體薄片30′之各邊的比率，係大於0且 小於1為佳，又，0.3以上0.9以下為較佳。 At this time, the ratio of the length of each portion to the sides of the elastic sheet 30' corresponding to the length of each side is greater than 0. It is preferably less than 1, and more preferably 0.3 or more and 0.9 or less.
另外，本發明，係不限定於上述實施形態，可在本發明的思想範圍內進行各種變形。例如，上述實施形態，雖係說明了關於將本發明的基板載置台應用於具有平行平板型電漿蝕刻裝置之下部電極之功能的例子，但並不限於此，亦可應用於使用了感應耦合型等的其他電漿生成手段之電漿蝕刻裝置的基板載置台，又不限於電漿蝕刻，可應用於電漿灰化、電漿CVD等的其他電漿處理裝置之基板載置台。而且，本發明，係不限於電漿處理裝置，可全面應用於將基板載置於基板載置台而進行處理的基板處理裝置。 The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, in the above embodiment, the example in which the substrate mounting table of the present invention is applied to the lower electrode of the parallel plate type plasma etching apparatus has been described. However, the present invention is not limited thereto, and may be applied to the use of inductive coupling. The substrate mounting table of the plasma etching apparatus of another plasma generating means such as a type is not limited to plasma etching, and can be applied to a substrate mounting table of another plasma processing apparatus such as plasma ashing or plasma CVD. Further, the present invention is not limited to the plasma processing apparatus, and can be applied to a substrate processing apparatus that performs processing by placing a substrate on a substrate stage.
又，上述實施形態，雖係表示了使冷卻媒體流通至作為調溫手段之設置於第1構件的冷媒流路者，但流通的媒體並不限於冷卻媒體，亦可為加熱媒體，又，不限於使用像這樣的調溫媒體者，亦可為使用了熱電元件或加熱器的調溫手段。 Further, in the above-described embodiment, the cooling medium is distributed to the refrigerant flow path provided in the first member as the temperature adjustment means. However, the medium to be distributed is not limited to the cooling medium, and may be a heating medium. It is also limited to the use of a temperature control medium such as this, and it is also a temperature control means using a thermoelectric element or a heater.
而且，作為上述實施形態，雖係表示了設置靜電夾具來作為基板載置部的例子，但第2構件的表面本身亦可為基板載置部。 Further, as the above-described embodiment, an example in which an electrostatic chuck is provided as a substrate mounting portion is shown, but the surface of the second member itself may be a substrate mounting portion.
再者，上述實施形態，雖係說明了關於將本發明應用於FPD用之玻璃基板的例子，但可全面適當地應用於載置FPD用之玻璃基板以外之矩形基板的矩形狀 之基板載置台。又，不限於矩形基板，當然可應用於載置半導體基板等、其他基板的基板載置台。 In the above-described embodiment, the present invention is applied to a glass substrate for FPD, but it can be suitably applied to a rectangular shape of a rectangular substrate other than the glass substrate for FPD. The substrate mounting table. Further, the present invention is not limited to a rectangular substrate, and can of course be applied to a substrate mounting table on which other substrates such as a semiconductor substrate are placed.
1‧‧‧電漿蝕刻裝置 1‧‧‧ plasma etching device
2‧‧‧腔室 2‧‧‧ chamber
4‧‧‧基板載置台 4‧‧‧Substrate mounting table
5‧‧‧絕緣構件 5‧‧‧Insulating components
6‧‧‧第1構件 6‧‧‧1st component
7‧‧‧第2構件 7‧‧‧2nd component
8‧‧‧靜電夾具 8‧‧‧Electrostatic fixture
9‧‧‧側壁絕緣構件 9‧‧‧Sidewall insulation members
11‧‧‧噴頭 11‧‧‧ sprinkler
12‧‧‧氣體擴散空間 12‧‧‧ gas diffusion space
13‧‧‧吐出孔 13‧‧‧Spit hole
14‧‧‧氣體導入口 14‧‧‧ gas inlet
15‧‧‧處理氣體供給管 15‧‧‧Processing gas supply pipe
16‧‧‧閥 16‧‧‧ valve
17‧‧‧質流控制器 17‧‧‧Flow Controller
18‧‧‧處理氣體供給源 18‧‧‧Processing gas supply
19‧‧‧排氣管 19‧‧‧Exhaust pipe
20‧‧‧排氣裝置 20‧‧‧Exhaust device
21‧‧‧搬入搬出口 21‧‧‧ Move in and out
22‧‧‧閘閥 22‧‧‧ gate valve
23‧‧‧供電線 23‧‧‧Power supply line
24‧‧‧匹配器 24‧‧‧matcher
25‧‧‧高頻電源 25‧‧‧High frequency power supply
30‧‧‧彈性體薄片 30‧‧‧ Elastomer sheets
31‧‧‧外周螺栓 31‧‧‧Outer bolts
32‧‧‧冷媒流路 32‧‧‧Refrigerant flow path
33‧‧‧冷卻器 33‧‧‧cooler
34‧‧‧本體 34‧‧‧Ontology
35‧‧‧吸附電極 35‧‧‧Adsorption electrode
36‧‧‧供電線 36‧‧‧Power supply line
37‧‧‧直流電源 37‧‧‧DC power supply
38‧‧‧開關 38‧‧‧ switch
40‧‧‧控制部 40‧‧‧Control Department
G‧‧‧基板 G‧‧‧Substrate
Claims (13)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2015-216551 | 2015-11-04 | ||
| JP2015216551A JP6584289B2 (en) | 2015-11-04 | 2015-11-04 | Substrate mounting table and substrate processing apparatus |
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| Publication Number | Publication Date |
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| TW201730960A true TW201730960A (en) | 2017-09-01 |
| TWI705495B TWI705495B (en) | 2020-09-21 |
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| Country | Link |
|---|---|
| JP (1) | JP6584289B2 (en) |
| KR (1) | KR101928626B1 (en) |
| CN (1) | CN107026102B (en) |
| TW (1) | TWI705495B (en) |
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| JP7090465B2 (en) * | 2018-05-10 | 2022-06-24 | 東京エレクトロン株式会社 | Mounting table and plasma processing equipment |
| JP7133992B2 (en) * | 2018-06-07 | 2022-09-09 | 東京エレクトロン株式会社 | SUBSTRATE PLACEMENT AND SUBSTRATE PROCESSING APPARATUS |
| JP7079718B2 (en) * | 2018-11-27 | 2022-06-02 | 東京エレクトロン株式会社 | Plasma processing equipment and plasma processing method |
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| JP2001237222A (en) * | 2000-02-22 | 2001-08-31 | Shibaura Mechatronics Corp | Vacuum-treating device |
| US7232591B2 (en) * | 2002-04-09 | 2007-06-19 | Matsushita Electric Industrial Co., Ltd. | Method of using an adhesive for temperature control during plasma processing |
| JP4082924B2 (en) * | 2002-04-16 | 2008-04-30 | キヤノンアネルバ株式会社 | Electrostatic chuck holder and substrate processing apparatus |
| US7431788B2 (en) * | 2005-07-19 | 2008-10-07 | Lam Research Corporation | Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system |
| JP2007311613A (en) * | 2006-05-19 | 2007-11-29 | Hitachi High-Technologies Corp | Sample stand and plasma processing device with it |
| CN101770971B (en) * | 2008-12-31 | 2012-06-20 | 中芯国际集成电路制造(上海)有限公司 | Wafer bearing device |
| KR101219054B1 (en) * | 2009-05-27 | 2013-01-18 | 도쿄엘렉트론가부시키가이샤 | Electrode for electrostatic attraction, manufacturing method therefor and substrate processing apparatus |
| US20120037068A1 (en) * | 2010-08-11 | 2012-02-16 | Applied Materials, Inc. | Composite substrates for direct heating and increased temperature uniformity |
| JP6010433B2 (en) * | 2012-11-15 | 2016-10-19 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
| JP6296770B2 (en) * | 2013-11-29 | 2018-03-20 | 日本特殊陶業株式会社 | Substrate mounting device |
| JP2017001899A (en) * | 2015-06-05 | 2017-01-05 | 旭硝子株式会社 | Manufacturing method of float glass, and manufacturing apparatus of float glass |
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| CN107026102A (en) | 2017-08-08 |
| KR101928626B1 (en) | 2018-12-12 |
| CN107026102B (en) | 2020-03-31 |
| TWI705495B (en) | 2020-09-21 |
| KR20170052492A (en) | 2017-05-12 |
| JP2017092104A (en) | 2017-05-25 |
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