TW201728685A - Resin composition, sheet-shaped molded article of same, light-emitting device using same, and method for manufacturing same - Google Patents

Resin composition, sheet-shaped molded article of same, light-emitting device using same, and method for manufacturing same Download PDF

Info

Publication number
TW201728685A
TW201728685A TW105139068A TW105139068A TW201728685A TW 201728685 A TW201728685 A TW 201728685A TW 105139068 A TW105139068 A TW 105139068A TW 105139068 A TW105139068 A TW 105139068A TW 201728685 A TW201728685 A TW 201728685A
Authority
TW
Taiwan
Prior art keywords
sheet
resin composition
phosphor
component
resin
Prior art date
Application number
TW105139068A
Other languages
Chinese (zh)
Inventor
Hiroki Sekiguchi
Original Assignee
Toray Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries filed Critical Toray Industries
Publication of TW201728685A publication Critical patent/TW201728685A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • C08L83/06Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/28Nitrogen-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/002Physical properties
    • C08K2201/005Additives being defined by their particle size in general
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
  • Luminescent Compositions (AREA)

Abstract

Provided are a resin composition containing at least (A) through (C) below, the resin composition having excellent heat resistance and adhesion during affixing, and a sheet-shaped molded article of the resin composition. (A) A reactive silicone resin in which 90% or more of organic groups bonded to silicon atoms are methyl groups; (B) a curing catalyst; and (C) a nonreactive silicone resin in which 90% or more of organic groups bonded to silicon atoms are methyl groups.

Description

樹脂組成物、其片狀成形物、以及使用該片狀成形物的發光裝置及其製造方法Resin composition, sheet-like molded product thereof, and light-emitting device using the same, and method of manufacturing the same

本發明是有關於一種樹脂組成物、其片狀成形物、以及使用該片狀成形物的發光裝置及其製造方法。The present invention relates to a resin composition, a sheet-like molded article thereof, and a light-emitting device using the sheet-like molded article and a method for producing the same.

近年來,可看到發光二極體(Light Emitting Diode,LED)的發光效率的驚人的提昇。而且,以低耗電、高壽命、設計性等為特徵,不僅是面向行動電話的閃光燈、或汽車的前燈等車載領域,而且即便是面向一般照明,市場亦迅速地擴大。但是,在與先前燈的替換中,仍然無法獲得充分的發光量,而要求LED的進一步的高亮度化。In recent years, an amazing improvement in the luminous efficiency of a Light Emitting Diode (LED) can be seen. Moreover, it is characterized by low power consumption, long life, design, and the like, and is not only a vehicle-mounted flashlight for a mobile phone, but also a headlight for a car, and the market is rapidly expanding even for general lighting. However, in the replacement with the previous lamp, a sufficient amount of luminescence is still not obtained, and further high luminance of the LED is required.

通常,LED的高亮度化採用使高電流流入LED元件中來提昇發光量的方法。但是,LED元件的發熱量或螢光體的蓄熱量增大,因此存在密封樹脂會熱劣化並著色化的課題。因此,為了獲得高發光效率,大多使用將甲基鍵結於作為密封樹脂的主鏈的Si-O重複結構的矽原子上而成者作為主成分的矽酮樹脂(所謂的甲基矽酮樹脂)(例如,參照專利文獻1)。In general, the high luminance of LEDs is a method of increasing the amount of light by causing a high current to flow into the LED elements. However, since the amount of heat generated by the LED element or the amount of stored heat of the phosphor increases, there is a problem that the sealing resin is thermally deteriorated and colored. Therefore, in order to obtain high luminous efficiency, an anthrone resin which is a main component of a ruthenium atom which bonds a methyl group to a Si—O repeating structure which is a main chain of a sealing resin (so-called methyl fluorenone resin) is often used. (for example, refer to Patent Document 1).

另一方面,就發光效率或成本方面而言,提出有將含有螢光體的片狀成形物(以下,螢光體片材)貼附於LED元件上的方法(例如,參照專利文獻2~專利文獻5)。與先前已實用化的將分散有螢光體的液狀樹脂分配至LED元件上並進行硬化的方法相比,該方法容易將固定量的螢光體高效地配置於LED元件上,由螢光體含有層的薄膜化所帶來的散熱性提昇優異。另外,藉由對螢光體片材賦予熱軟化性及接著性,可不使用先前必需的接著劑而直接貼附於LED元件上,因此可高效地進行散熱。 現有技術文獻 專利文獻On the other hand, in terms of luminous efficiency and cost, a method of attaching a sheet-like molded article (hereinafter, a phosphor sheet) containing a phosphor to an LED element has been proposed (for example, refer to Patent Document 2 to Patent Document 5). Compared with a previously applied method in which a liquid resin in which a phosphor is dispersed is dispensed onto an LED element and cured, the method is easy to efficiently dispose a fixed amount of the phosphor on the LED element by the fluorescent light. The film formation of the body-containing layer is excellent in heat dissipation improvement. Further, by imparting thermal softening property and adhesion to the phosphor sheet, it is possible to directly attach the LED element to the LED element without using a previously necessary adhesive, so that heat can be efficiently dissipated. Prior art literature

專利文獻1:日本專利特開2014-34679號公報 專利文獻2:日本專利特開2013-177553號公報 專利文獻3:日本專利特開2011-107717號公報 專利文獻4:日本專利特開2009-84511號公報 專利文獻5:日本專利特開2013-1791號公報Patent Document 1: Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Patent Document 5: Japanese Patent Laid-Open Publication No. 2013-1791

[發明所欲解決之課題] 將螢光體片材直接貼附於LED元件上的方法雖然散熱性比分配法優異,但為了賦予熱熔接性而將苯基導入至分子結構中,因此耐熱性存在課題。[Problems to be Solved by the Invention] The method of directly attaching a phosphor sheet to an LED element is superior to the distribution method in heat dissipation, but the phenyl group is introduced into the molecular structure in order to impart heat fusion properties, so heat resistance is obtained. There are problems.

另一方面,於專利文獻2中揭示有以提昇耐熱性為目的而將甲基導入至矽酮樹脂的分子結構中的方法。但是,於該文獻中所揭示的方法中,樹脂的分子結構之中,側鏈的90%以上為甲基,因此存在與LED元件的接著性不足,連續點燈試驗中的片材脫離或在片材與元件的界面中產生空隙,容易引起亮度下降的課題。另外,貼附前的螢光體片材為未硬化狀態,且為半固體狀或柔軟的固體狀,因此難以高精度地進行切斷或開孔加工。On the other hand, Patent Document 2 discloses a method of introducing a methyl group into a molecular structure of an anthrone resin for the purpose of improving heat resistance. However, in the method disclosed in this document, among the molecular structures of the resin, 90% or more of the side chain is a methyl group, and thus there is insufficient adhesion to the LED element, and the sheet in the continuous lighting test is detached or A gap is formed in the interface between the sheet and the element, which tends to cause a decrease in brightness. Further, since the phosphor sheet before the attachment is in an unhardened state and is semi-solid or soft, it is difficult to perform cutting or drilling with high precision.

於專利文獻4中,為了獲得接著性而添加軟化點為30℃~150℃的矽酮樹脂。但是,因於樹脂結構中含有環狀醚基,故容易產生熱分解,而成為螢光體片材的著色原因。In Patent Document 4, an anthrone resin having a softening point of 30 to 150 ° C is added in order to obtain adhesiveness. However, since the resin structure contains a cyclic ether group, it is likely to cause thermal decomposition, which causes coloring of the phosphor sheet.

於專利文獻5中,藉由起因於分子結構的苯基的形態控制而獲得樹脂軟化性及黏著性,但將苯基鍵結於作為密封樹脂的主鏈的Si-O重複結構的矽原子上而成者作為主成分的所謂的苯基甲基矽酮樹脂的耐熱性不充分,容易產生由熱劣化所引起的著色。In Patent Document 5, resin softening property and adhesiveness are obtained by morphological control of a phenyl group derived from a molecular structure, but a phenyl group is bonded to a ruthenium atom of a Si-O repeating structure which is a main chain of a sealing resin. The so-called phenylmethyl fluorenone resin which is a main component of the composition is insufficient in heat resistance, and coloring due to thermal deterioration is likely to occur.

如以上般,尚未獲得耐熱性優異、且貼附時的接著性亦優異的螢光體片材。本發明的目的在於提供一種使所述特性併存的樹脂組成物及片材、使用該些所製作的發光裝置與其製造方法。 [解決課題之手段]As described above, a phosphor sheet excellent in heat resistance and excellent in adhesion at the time of attachment has not been obtained. An object of the present invention is to provide a resin composition and a sheet which have the above-described characteristics, a light-emitting device produced by using the same, and a method for producing the same. [Means for solving the problem]

本發明是一種樹脂組成物,其至少含有下述(A)成分~(C)成分。 (A)鍵結於矽原子上的有機基中的90%以上為甲基的反應性矽酮樹脂; (B)硬化觸媒; (C)鍵結於矽原子上的有機基中的90%以上為甲基的非反應性矽酮樹脂。 [發明的效果]The present invention is a resin composition containing at least the following components (A) to (C). (A) a reactive fluorenone resin in which more than 90% of the organic groups bonded to the ruthenium atom are methyl; (B) a hardening catalyst; (C) 90% of the organic groups bonded to the ruthenium atom The above is a methyl non-reactive fluorenone resin. [Effects of the Invention]

根據本發明的樹脂組成物,可提供一種耐熱性與朝LED元件上貼附時的接著性優異的片材。利用使本發明的樹脂組成物中含有螢光體而成的含有螢光體的樹脂組成物或含有螢光體的片狀成形物所製作的發光裝置的色度均勻性、耐熱性、耐光性及可靠性優異。According to the resin composition of the present invention, it is possible to provide a sheet excellent in heat resistance and adhesion to the LED element. Color uniformity, heat resistance, and light resistance of a light-emitting device produced by using a phosphor-containing resin composition containing a phosphor or a sheet-like molded product containing a phosphor in a resin composition of the present invention And excellent reliability.

<樹脂組成物> 本發明的樹脂組成物至少含有下述(A)成分~(C)成分。 (A)鍵結於矽原子上的有機基中的90%以上為甲基的反應性矽酮樹脂; (B)硬化觸媒; (C)鍵結於矽原子上的有機基中的90%以上為甲基的非反應性矽酮樹脂。<Resin Composition> The resin composition of the present invention contains at least the following components (A) to (C). (A) a reactive fluorenone resin in which more than 90% of the organic groups bonded to the ruthenium atom are methyl; (B) a hardening catalyst; (C) 90% of the organic groups bonded to the ruthenium atom The above is a methyl non-reactive fluorenone resin.

此處,所謂鍵結於矽原子上的有機基,是指鍵結於矽原子上的氫以外的所有官能基。另外,所謂90%以上,是指(鍵結於矽原子上的甲基的數量)/(鍵結於矽原子上的有機基的數量)為90%以上。Here, the organic group bonded to the ruthenium atom means all the functional groups other than the hydrogen bonded to the ruthenium atom. In addition, 90% or more means that the number of methyl groups bonded to a ruthenium atom / (the number of organic groups bonded to a ruthenium atom) is 90% or more.

((A)成分) (A)成分的反應性矽酮樹脂是指於樹脂的主鏈末端及/或側鏈中具有可成為縮合反應及/或加成反應的起點的有機官能基或鍵結於矽原子上的氫原子,並藉由熱、水分、及紫外線來促進硬化反應的矽酮樹脂。(Component (A)) The reactive fluorenone resin of the component (A) means an organic functional group or a bond which can serve as a starting point of a condensation reaction and/or an addition reaction in a main chain terminal and/or a side chain of the resin. An anthrone resin which promotes a hardening reaction by a hydrogen atom on a ruthenium atom by heat, moisture, and ultraviolet rays.

作為(A)成分較佳的矽酮樹脂為由平均單元式(1)所表示的反應性矽酮樹脂。The fluorenone resin which is preferable as the component (A) is a reactive fluorenone resin represented by the average unit formula (1).

[化1] [Chemical 1]

R1 ~R3 分別可相同,亦可不同,且為氫原子、或者經取代或未經取代的烷基、烯基、環氧基、烷氧基、或胺基。其中,R1 ~R3 的至少1個以上為烯基或氫原子。a~f分別為0以上的整數,且滿足a+b=3、c+d=2、e+f=1。g~j為表示各括號內的構成單元的比例的數字,且為滿足g+h+j=1.0的正數。當將鍵結於矽原子上的經取代或未經取代的烷基中的甲基的總數設為M時,滿足M/{3g+2h+j}≧0.90。R 1 to R 3 may be the same or different and each may be a hydrogen atom or a substituted or unsubstituted alkyl group, alkenyl group, epoxy group, alkoxy group or amine group. Among them, at least one or more of R 1 to R 3 is an alkenyl group or a hydrogen atom. a to f are each an integer of 0 or more, and satisfy a+b=3, c+d=2, and e+f=1. g to j are numbers indicating the ratio of constituent units in each parenthesis, and are positive numbers satisfying g + h + j = 1.0. When the total number of methyl groups in the substituted or unsubstituted alkyl group bonded to the ruthenium atom is set to M, M/{3g+2h+j}≧0.90 is satisfied.

作為由R1 ~R3 所表示的烷基,可列舉:甲基、乙基、丙基、丁基、戊基、及己基等。特佳為甲基。Examples of the alkyl group represented by R 1 to R 3 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, and a hexyl group. Particularly preferred is methyl.

作為烯基,可列舉:乙烯基、丙烯酸基及甲基丙烯酸基等。Examples of the alkenyl group include a vinyl group, an acrylic group, and a methacryl group.

(A)成分可為單獨一種,亦可為多種的混合物。The component (A) may be a single one or a mixture of a plurality of kinds.

於(A)成分中,鍵結於矽原子上的烯基與鍵結於矽原子上的氫原子產生矽氫化反應。因此,較佳為分別包含含有鍵結於矽原子上的烯基的化合物、及含有鍵結於矽原子上的氫原子的化合物。In the component (A), an alkenyl group bonded to a ruthenium atom generates a hydrazine hydrogenation reaction with a hydrogen atom bonded to a ruthenium atom. Therefore, it is preferred to respectively contain a compound containing an alkenyl group bonded to a ruthenium atom and a compound containing a hydrogen atom bonded to a ruthenium atom.

有機基的定性分析、定量分析藉由1 H-核磁共振(Nuclear Magnetic Resonance,NMR)測定、13 C-NMR測定、及29 Si-NMR測定來進行。鍵結於矽原子上的甲基的比例可根據自所述分析獲得的平均單元式來算出。Qualitative analysis and quantitative analysis of the organic group were carried out by 1 H-nuclear magnetic resonance (NMR) measurement, 13 C-NMR measurement, and 29 Si-NMR measurement. The ratio of the methyl group bonded to the ruthenium atom can be calculated from the average unit formula obtained from the analysis.

於製作樹脂組成物的步驟方面,(A)成分較佳為於25℃下為液狀。具體而言,25℃下的黏度較佳為10 mPa·s以上,更佳為50 mPa·s以上。若樹脂組成物的黏度為所述範圍內,則可獲得螢光體的分散性優異的含有螢光體的樹脂組成物。In the step of producing the resin composition, the component (A) is preferably liquid at 25 °C. Specifically, the viscosity at 25 ° C is preferably 10 mPa·s or more, more preferably 50 mPa·s or more. When the viscosity of the resin composition is within the above range, a phosphor-containing resin composition having excellent dispersibility of the phosphor can be obtained.

(A)成分的重量平均分子量較佳為1,000~300,000,更佳為1,500~100,000,特佳為2,000~10,000。若重量平均分子量為所述範圍內,則當混合(C)成分時,可均勻地進行粉碎・混錬,另外,可抑制(C)成分的經時的沈澱・分離。進而,若為所述範圍內,則螢光體可保持良好的分散穩定性。The weight average molecular weight of the component (A) is preferably from 1,000 to 300,000, more preferably from 1,500 to 100,000, particularly preferably from 2,000 to 10,000. When the weight average molecular weight is within the above range, when the component (C) is mixed, the pulverization and mixing can be performed uniformly, and the precipitation and separation of the component (C) over time can be suppressed. Further, if it is within the above range, the phosphor can maintain good dispersion stability.

再者,(A)成分的重量平均分子量是使用東曹(股份)製造的HLC-8220GPC,於以下的條件下進行測定時所獲得的值。 管柱:東曹(股份)製造的TSKgel Guard columnHHR-H、GMHHR-N 展開溶媒:四氫呋喃 展開速度:1.0 ml/min 管柱溫度:23℃ 標準試樣:使用東曹(股份)製造的利用單分散聚苯乙烯的校準曲線進行換算所得的數值。In addition, the weight average molecular weight of the component (A) is a value obtained by measuring under the following conditions using HLC-8220GPC manufactured by Tosoh Corporation. Pipe column: TSKgel Guard columnHHR-H, GMHHR-N manufactured by Tosoh (share) Development solvent: tetrahydrofuran development speed: 1.0 ml/min column temperature: 23 °C Standard sample: use order made by Tosoh (stock) The value obtained by converting the calibration curve of the dispersed polystyrene.

(A)成分的玻璃轉移點較佳為-100℃~20℃的範圍,更佳為-80℃~10℃的範圍,進而更佳為-50℃~0℃的範圍。The glass transition point of the component (A) is preferably in the range of -100 ° C to 20 ° C, more preferably in the range of -80 ° C to 10 ° C, still more preferably in the range of -50 ° C to 0 ° C.

若(A)成分的玻璃轉移點為所述範圍內,則於環境溫度20℃以上為液狀,因此當與(B)成分、(C)成分及螢光體混合時,可獲得均勻的樹脂組成物。因此,可抑制利用該樹脂組成物所製作的發光裝置的色溫不均。When the glass transition point of the component (A) is within the above range, it is liquid at an ambient temperature of 20 ° C or higher. Therefore, when mixed with the component (B), the component (C), and the phosphor, a uniform resin can be obtained. Composition. Therefore, color temperature unevenness of the light-emitting device produced by the resin composition can be suppressed.

玻璃轉移點可藉由市售的測定器[例如,精工電子工業公司製造的示差掃描熱量計(商品名DSC6220 昇溫速度0.5℃/min)]來測定。The glass transition point can be measured by a commercially available measuring instrument [for example, a differential scanning calorimeter manufactured by Seiko Instruments Inc. (trade name: DSC6220, heating rate: 0.5 ° C/min)].

於本發明中,亦可使用含有(A)成分與(B)成分的市售品。例如可列舉:OE-6250、JCR6115、JCR6125、JCR6126、JCR6122、JCR6101、JCR6101UP、JCR6109、JCR6110、JCR6140、OE-6351、OE-6370M、OE-6370HF、OE-6336、EG-6301(以上,東麗・道康寧(股份)製造); KER-2500、KER-2600、KER-6020F、KER-6075F、LPS-3419、LPS-3541(以上,信越化學工業(股份)製造); IVS4312、IVS4542、IVS4546、IVS4622、IVS4632、IVS4742、IVS4752、XE14-C2042(以上,日本邁圖高新材料(Momentive Performance Materials Japan)(合)製造)等,但並不限定於該些市售品。可單獨使用該些市售品,亦可混合多種。In the present invention, a commercially available product containing the components (A) and (B) may also be used. For example, OE-6250, JCR6115, JCR6125, JCR6126, JCR6122, JCR6101, JCR6101UP, JCR6109, JCR6110, JCR6140, OE-6351, OE-6370M, OE-6370HF, OE-6336, EG-6301 (above, Toray・Manufacture of Dow Corning (share); KER-2500, KER-2600, KER-6020F, KER-6075F, LPS-3419, LPS-3541 (above, Shin-Etsu Chemical Co., Ltd.); IVS4312, IVS4542, IVS4546, IVS4622 And IVS4632, IVS4742, IVS4752, XE14-C2042 (above, manufactured by Momentive Performance Materials Japan), but are not limited to these commercial products. These commercially available products may be used singly or in combination.

((B)成分) (B)成分較佳為用以促進(A)成分中的烯基與鍵結於矽原子上的氫原子的矽氫化反應的矽氫化反應觸媒。具體而言,可列舉鉑系觸媒、銠系觸媒、鈀系觸媒等,但只要是促進本組成物的硬化者,則並不限定於此。(Component (B)) The component (B) is preferably a hydrogenation reaction catalyst for promoting the hydrogenation reaction of an alkenyl group in the component (A) with a hydrogen atom bonded to a halogen atom. Specific examples thereof include a platinum-based catalyst, a ruthenium-based catalyst, and a palladium-based catalyst. However, the present invention is not limited thereto as long as it promotes the curing of the composition.

於本發明中,較佳為使用反應控制相對容易的鉑系觸媒。具體而言,可列舉:鉑微粉末、四氯化鉑、氯鉑酸、氯鉑酸的醇溶液、鉑-烯基矽氧烷錯合物、鉑-烯烴錯合物、鉑-羰基錯合物等。尤其,較佳為氯成分濃度低的鉑-烯基矽氧烷錯合物。作為烯基矽氧烷,可列舉:1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷,1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷,利用乙基、苯基等取代該些烯基矽氧烷的甲基的一部分而成的烯基矽氧烷,利用烯丙基、己烯基等取代該些烯基矽氧烷的乙烯基而成的烯基矽氧烷。該些之中,特佳為穩定性高的1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷。In the present invention, it is preferred to use a platinum-based catalyst which is relatively easy to control the reaction. Specific examples thereof include platinum fine powder, platinum tetrachloride, chloroplatinic acid, an alcohol solution of chloroplatinic acid, a platinum-alkenyl alkoxylate complex, a platinum-olefin complex, and a platinum-carbonyl group. Things and so on. In particular, a platinum-alkenyl alkoxylate complex having a low chlorine component concentration is preferred. Examples of the alkenyl decane include 1,3-divinyl-1,1,3,3-tetramethyldioxane, 1,3,5,7-tetramethyl-1,3. 5,7-tetravinylcyclotetraoxane, an alkenyl oxirane obtained by substituting a part of a methyl group of the alkenyl oxirane with an ethyl group, a phenyl group or the like, using an allyl group, a hexenyl group An alkenyl alkane which is substituted with a vinyl group of the alkenyl alkane. Among these, 1,3-divinyl-1,1,3,3-tetramethyldioxane having high stability is particularly preferred.

作為此種反應觸媒,可列舉:美國格萊斯特(Gelest)公司製造的「SIP6829.0」(鉑羰基乙烯基甲基錯合物、鉑3.0%~3.5%濃度乙烯基甲基環狀矽氧烷溶液)、「SIP6830.0」(鉑二乙烯基四甲基二矽氧烷錯合物、鉑3.0%~3.5%濃度乙烯基末端聚二甲基矽氧烷溶液)、「SIP6831.0」(鉑二乙烯基四甲基二矽氧烷錯合物、鉑2.1%~2.4%濃度二甲苯溶液)、「SIP6832.0」(鉑環乙烯基甲基矽氧烷錯合物、鉑3.0%~3.5%濃度環狀甲基乙烯基矽氧烷溶液)、「SIP6833.0」(鉑辛醛/辛醇錯合物、鉑2.0%~2.5%濃度辛醇溶液)等。Examples of such a reaction catalyst include "SIP6829.0" manufactured by Gelest Corporation of the United States (platinum carbonyl vinyl methyl complex, platinum 3.0% to 3.5% vinyl methyl ring). "N-oxane solution", "SIP6830.0" (platinum divinyl tetramethyl dioxane complex, platinum 3.0% to 3.5% concentration of vinyl-terminated polydimethyl siloxane solution), "SIP6831. 0" (platinum divinyltetramethyldioxane complex, platinum 2.1% to 2.4% xylene solution), "SIP6832.0" (platinum cyclovinylmethyl oxime complex, platinum 3.0% to 3.5% concentration of cyclic methylvinyl siloxane solution), "SIP6833.0" (platinum octanal/octanol complex, platinum 2.0% to 2.5% concentration octanol solution), and the like.

相對於樹脂組成物的總重量,(B)成分的含量以金屬原子的重量換算計較佳為0.01 ppm~500 ppm,更佳為0.1 ppm~100 ppm。若為所述範圍內,則可獲得充分的硬化性,且於硬化後可保持無著色的狀態。The content of the component (B) is preferably from 0.01 ppm to 500 ppm, more preferably from 0.1 ppm to 100 ppm, based on the total weight of the resin composition. When it is in the said range, sufficient hardening property can be acquired, and it can maintain the color-free state after hardening.

((C)成分) (C)成分的非反應性矽酮樹脂是指於樹脂的主鏈末端及/或側鏈中不具有可成為縮合反應及/或加成反應的起點的有機官能基,且不會因熱、水分、及紫外線而產生硬化反應的矽酮樹脂。(Component (C)) The non-reactive fluorenone resin of the component (C) means an organic functional group which does not have a starting point of a condensation reaction and/or an addition reaction in the main chain terminal and/or the side chain of the resin. An anthrone resin which does not cause a hardening reaction due to heat, moisture, and ultraviolet rays.

作為(C)成分較佳的矽酮樹脂為由平均單元式(2)所表示的非反應性矽酮樹脂。The fluorenone resin which is preferable as the component (C) is a non-reactive fluorenone resin represented by the average unit formula (2).

[化2] [Chemical 2]

R4 ~R6 為經取代或未經取代的烷基或烷氧基,分別可相同,亦可不同。k、p及s為表示各括號內的構成單元的比例的數字,且為滿足0.01≦k≦0.50、k+p+s=1.0的正數。m、n、q及r為滿足m+n=2、q+r=1的0以上的整數。當將鍵結於矽原子上的經取代或未經取代的烷基中的甲基的總數設為M時,滿足M/{3k+2p+s}≧0.90。R 4 to R 6 are a substituted or unsubstituted alkyl or alkoxy group, and may be the same or different. k, p, and s are numbers indicating the proportion of constituent elements in each parenthesis, and are positive numbers satisfying 0.01≦k≦0.50 and k+p+s=1.0. m, n, q, and r are integers of 0 or more satisfying m+n=2 and q+r=1. When the total number of methyl groups in the substituted or unsubstituted alkyl group bonded to the ruthenium atom is set to M, M/{3k+2p+s}≧0.90 is satisfied.

作為由R4 ~R6 所表示的烷基,可列舉:甲基、乙基、丙基、丁基、戊基、及己基等。特佳為甲基。Examples of the alkyl group represented by R 4 to R 6 include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, and a hexyl group. Particularly preferred is methyl.

作為由R4 ~R6 所表示的烷氧基,可列舉:甲氧基、乙氧基、丙氧基、丁氧基等。特佳為甲氧基。Examples of the alkoxy group represented by R 4 to R 6 include a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. Particularly preferred is methoxy.

k及s特佳為滿足0.02≦k≦0.40、0.10≦s≦0.90的正整數。k and s are particularly good integers satisfying 0.02 ≦ k ≦ 0.40, 0.10 ≦ s ≦ 0.90.

作為(C)成分,亦可使用市售品。例如可列舉:KF-7312J、KF-9021、KF-7312K、X-21-5595、KF-7312T、X-21-5616、KF-7312L、KF-9021L、X-21-5249、X-21-5249L、X-21-5250、X-21-5250L、KP-562P(以上,信越化學工業(股份)製造); 希爾福柔性樹脂(SilForm Flexible resin)、SR1000、SS4230、SS4267、XS66-B8226、XS66-C1191、XS66-B8636(以上,日本邁圖高新材料(合)製造); RSN-0749樹脂(Resin)、DC593、670流體(Fluid)、680流體(Fluid)、MQ-1600固體樹脂(Solid Resin)、MQ-1640固體樹脂(Solid Resin)、AMS-C30美容蠟(Cosmetic Wax)、SW-8005 C30樹脂蠟(Resin Wax)、580蠟(Wax)(以上,東麗道康寧(股份)製造)等,但並不限定於該些市售品。可單獨使用該些市售品,亦可混合多種。A commercially available product can also be used as the component (C). For example, KF-7312J, KF-9021, KF-7312K, X-21-5595, KF-7312T, X-21-5616, KF-7312L, KF-9021L, X-21-5249, X-21- 5249L, X-21-5250, X-21-5250L, KP-562P (above, manufactured by Shin-Etsu Chemical Co., Ltd.); SilForm Flexible resin, SR1000, SS4230, SS4267, XS66-B8226, XS66-C1191, XS66-B8636 (above, manufactured by Japan Momentive Advanced Materials Co., Ltd.); RSN-0749 resin (Resin), DC593, 670 fluid (Fluid), 680 fluid (Fluid), MQ-1600 solid resin (Solid Resin), MQ-1640 Solid Resin, AMS-C30 Cosmetic Wax, SW-8005 C30 Resin Wax, 580 Wax (above, manufactured by Toray Dow Corning (stock)) Etc., but not limited to these commercial items. These commercially available products may be used singly or in combination.

於本發明中,藉由適宜設計(A)成分與(C)成分的混合比率,可控制加熱時的軟化性,因此該樹脂組成物可獲得接著性。In the present invention, since the softening property at the time of heating can be controlled by appropriately designing the mixing ratio of the component (A) and the component (C), the resin composition can obtain the adhesiveness.

當將(A)成分與(C)成分的合計量設為100 wt%(重量百分比)時,本發明的樹脂組成物中的(C)成分的適宜的含量較佳為0.5 wt%以上,更佳為10 wt%以上,更佳為15 wt%以上,更佳為20 wt%以上,進而更佳為30 wt%以上。另外,較佳為70 wt%以下,更佳為60 wt%以下,進而更佳為50 wt%以下。藉由(C)成分含量適宜,該樹脂組成物於加熱時顯現更良好的接著性。When the total amount of the component (A) and the component (C) is 100% by weight, the content of the component (C) in the resin composition of the present invention is preferably 0.5% by weight or more. Preferably, it is 10 wt% or more, more preferably 15 wt% or more, more preferably 20 wt% or more, and still more preferably 30 wt% or more. Further, it is preferably 70 wt% or less, more preferably 60 wt% or less, still more preferably 50 wt% or less. When the content of the component (C) is appropriate, the resin composition exhibits better adhesion upon heating.

(C)成分的重量平均分子量較佳為1,000~100,000,更佳為2,000~50,000,特佳為3,000~5,000。若重量平均分子量為所述範圍內,則可將(C)成分的玻璃轉移點調整成50℃~200℃的範圍。(C)成分的重量平均分子量是藉由與(A)成分的重量平均分子量相同的測定所獲得的值。The weight average molecular weight of the component (C) is preferably from 1,000 to 100,000, more preferably from 2,000 to 50,000, particularly preferably from 3,000 to 5,000. When the weight average molecular weight is within the above range, the glass transition point of the component (C) can be adjusted to a range of 50 to 200 °C. The weight average molecular weight of the component (C) is a value obtained by the measurement of the same weight average molecular weight as the component (A).

(C)成分的玻璃轉移點較佳為50℃~200℃的範圍,更佳為60℃~150℃的範圍,進而更佳為70℃~120℃的範圍。The glass transition point of the component (C) is preferably in the range of 50 ° C to 200 ° C, more preferably in the range of 60 ° C to 150 ° C, still more preferably in the range of 70 ° C to 120 ° C.

若(C)成分的玻璃轉移點為所述範圍內,則當環境溫度未滿50℃時,(C)成分為固體形狀且不顯現黏著性。因此,當將含有(C)成分的螢光體樹脂組成物加工成片狀時,因於室溫下(25℃)不具有黏著性,故可容易地處理。進而,若將該組成物加熱至(C)成分的玻璃轉移點以上,則(C)成分熔融並顯示出液體的性狀,因此該樹脂組成物軟化並可顯現黏著性。When the glass transition point of the component (C) is within the above range, when the ambient temperature is less than 50 ° C, the component (C) has a solid shape and does not exhibit adhesiveness. Therefore, when the phosphor resin composition containing the component (C) is processed into a sheet form, since it has no adhesiveness at room temperature (25 ° C), it can be easily handled. Further, when the composition is heated to a temperature higher than the glass transition point of the component (C), the component (C) is melted and exhibits a liquid property, so that the resin composition is softened and the adhesiveness is exhibited.

(螢光體) 本發明的樹脂組成物可含有螢光體。螢光體是吸收自LED元件中放出的光後,進行波長轉換,並放出波長與LED元件的發光波長不同的光的物質。藉此,自LED元件中放出的光的一部分與自螢光體中放出的光的一部分混合,而獲得包含白色的多色系的發光裝置。(Fluorescent Body) The resin composition of the present invention may contain a phosphor. The phosphor absorbs light emitted from the LED element, performs wavelength conversion, and emits light having a wavelength different from that of the LED element. Thereby, a part of the light emitted from the LED element is mixed with a part of the light emitted from the phosphor to obtain a multi-color light-emitting device including white.

所述螢光體只要可進行波長轉換,則可為有機物,亦可為無機物,但就耐熱性、耐光性的觀點而言,較佳為無機物。具體而言,有發出綠色光的螢光體、發出藍色光的螢光體、發出黃色光的螢光體、發出紅色光的螢光體等。The phosphor may be an organic substance or an inorganic substance as long as it can be wavelength-converted, but is preferably an inorganic substance from the viewpoint of heat resistance and light resistance. Specifically, there are a phosphor that emits green light, a phosphor that emits blue light, a phosphor that emits yellow light, a phosphor that emits red light, and the like.

作為可較佳地用於本發明的無機螢光體,作為發出綠色光的螢光體,例如有SrAl2 O4 :Eu、Y2 SiO5 :Ce,Tb、MgAl11 O19 :Ce,Tb、Sr7 Al12 O25 :Eu、(Mg、Ca、Sr、Ba中的至少一種以上)Ga2 S4 :Eu、β型賽隆等。As the inorganic phosphor which can be preferably used in the present invention, as the phosphor which emits green light, for example, SrAl 2 O 4 :Eu, Y 2 SiO 5 :Ce, Tb, MgAl 11 O 19 :Ce, Tb And Sr 7 Al 12 O 25 :Eu, at least one of (Mg, Ca, Sr, and Ba) Ga 2 S 4 :Eu, β-Sialon, or the like.

作為發出藍色光的螢光體,例如有Sr5 (PO4 )3 Cl:Eu、(SrCaBa)5 (PO4 )3 Cl:Eu、(BaCa)5 (PO4 )3 Cl:Eu、(Mg、Ca、Sr、Ba中的至少一種以上)2 B5 O9 Cl:Eu,Mn、(Mg、Ca、Sr、Ba中的至少一種以上)(PO4 )6 Cl2 :Eu,Mn等。Examples of the phosphor that emits blue light include Sr 5 (PO 4 ) 3 Cl:Eu, (SrCaBa) 5 (PO 4 ) 3 Cl:Eu, (BaCa) 5 (PO 4 ) 3 Cl:Eu, (Mg At least one of Ca, Sr, and Ba) 2 B 5 O 9 Cl: Eu, Mn, (at least one of Mg, Ca, Sr, and Ba) (PO 4 ) 6 Cl 2 : Eu, Mn, or the like.

作為發出綠色光~黃色光的螢光體,有至少藉由鈰來活化的釔・鋁氧化物螢光體、至少藉由鈰來活化的釔・釓・鋁氧化物螢光體、至少藉由鈰來活化的釔・鋁・石榴石氧化物螢光體、及至少藉由鈰來活化的釔・鎵・鋁氧化物螢光體等(所謂的YAG系螢光體)。具體而言,可使用Ln3 M5 O12 :R(Ln為選自Y、Gd、La中的至少一種以上。M包含Al、Ca的至少任一者。R為鑭系)、(Y1-x Gax )3 (Al1-y Gay )5 O12 :R(R為選自Ce、Tb、Pr、Sm、Eu、Dy、Ho中的至少一種以上。0<x<0.5,0<y<0.5)。As a phosphor that emits green light to yellow light, there are at least an aluminum oxide phosphor activated by yttrium, and a lanthanum aluminum oxide phosphor activated at least by yttrium, at least by A yttrium-aluminum-garnet oxide phosphor activated by ruthenium, and a lanthanum-gallium-aluminum oxide phosphor activated by at least ruthenium (so-called YAG-based phosphor). Specifically, Ln 3 M 5 O 12 :R (Ln is at least one selected from the group consisting of Y, Gd, and La. M includes at least one of Al and Ca. R is a lanthanoid series), (Y 1 -x Ga x ) 3 (Al 1-y Ga y ) 5 O 12 : R (R is at least one selected from the group consisting of Ce, Tb, Pr, Sm, Eu, Dy, and Ho. 0<x<0.5,0 <y<0.5).

作為發出紅色光的螢光體,例如可列舉:Y2 O2 S:Eu、La2 O2 S:Eu、Y2 O3 :Eu、Gd2 O2 S:Eu、及由K2 SiF6 :Mn所表示的KSF螢光體。Examples of the phosphor that emits red light include Y 2 O 2 S:Eu, La 2 O 2 S:Eu, Y 2 O 3 :Eu, Gd 2 O 2 S:Eu, and K 2 SiF 6 . : KSF phosphor represented by Mn.

另外,作為對應於目前主流的藍色LED來進行發光的螢光體,可列舉:Y3 (Al,Ga)5 O12 :Ce、(Y,Gd)3 Al5 O12 :Ce、Lu3 Al5 O12 :Ce、Y3 Al5 O12 :Ce等YAG系螢光體,Tb3 Al5 O12 :Ce等TAG系螢光體,(Ba,Sr)2 SiO4 :Eu系螢光體或Ca3 Sc2 Si3 O12 :Ce系螢光體,(Sr,Ba,Mg)2 SiO4 :Eu等矽酸鹽系螢光體,(Ca,Sr)2 Si5 N8 :Eu、(Ca,Sr)AlSiN3 :Eu、CaSiAlN3 :Eu等氮化物系螢光體,Cax (Si,Al)12 (O,N)16 :Eu等氮氧化物系螢光體,以及(Ba,Sr,Ca)Si2 O2 N2 :Eu系螢光體,Ca8 MgSi4 O16 Cl2 :Eu系螢光體,SrAl2 O4 :Eu、Sr4 Al14 O25 :Eu等螢光體。Further, examples of the phosphor that emits light corresponding to the current mainstream blue LED include Y 3 (Al, Ga) 5 O 12 :Ce, (Y, Gd) 3 Al 5 O 12 :Ce, Lu 3 Al 5 O 12 :Ce, Y 3 Al 5 O 12 :Ce and other YAG-based phosphors, Tb 3 Al 5 O 12 :Ce and other TAG-based phosphors, (Ba,Sr) 2 SiO 4 :Eu-based fluorescent Or Ca 3 Sc 2 Si 3 O 12 :Ce-based phosphor, (Sr,Ba,Mg) 2 SiO 4 :Eu and other citrate-based phosphors, (Ca,Sr) 2 Si 5 N 8 :Eu , (Ca, Sr)AlSiN 3 :Eu, a nitride-based phosphor such as CaSiAlN 3 :Eu, a oxynitride-based phosphor such as Ca x (Si,Al) 12 (O,N) 16 :Eu, and Ba, Sr, Ca) Si 2 O 2 N 2 : Eu-based phosphor, Ca 8 MgSi 4 O 16 Cl 2 : Eu-based phosphor, SrAl 2 O 4 : Eu, Sr 4 Al 14 O 25 : Eu, etc. Fluorescent body.

該些之中,就發光效率或亮度等方面而言,可較佳地使用YAG系螢光體、TAG系螢光體、矽酸鹽系螢光體。除所述以外,亦可按照用途或作為目標的發光色而使用公知的螢光體。Among these, YAG-based phosphors, TAG-based phosphors, and citrate-based phosphors can be preferably used in terms of luminous efficiency, brightness, and the like. In addition to the above, a known phosphor may be used depending on the application or the intended luminescent color.

本發明中的螢光體的平均一次粒徑較佳為5 μm~40 μm的範圍。所述範圍之中,較佳為8 μm以上者,更佳為10 μm以上者,進而更佳為15 μm以上者。另一方面,較佳為40 μm以下者,更佳為20 μm以下者。若螢光體的平均一次粒徑為所述範圍內,則於組成物中的分散狀態變得均勻且穩定,因此由該組成物所製作的片狀成形物(以下,有時稱為「螢光體片材」)可獲得色度均勻者。螢光體較佳為使用真球度高的粒子。The average primary particle diameter of the phosphor in the present invention is preferably in the range of 5 μm to 40 μm. Among the above, it is preferably 8 μm or more, more preferably 10 μm or more, and still more preferably 15 μm or more. On the other hand, it is preferably 40 μm or less, more preferably 20 μm or less. When the average primary particle diameter of the phosphor is within the above range, the dispersion state in the composition becomes uniform and stable, and thus the sheet-like molded article produced from the composition (hereinafter sometimes referred to as "firefly" Light body sheet") can obtain uniform color. The phosphor preferably uses particles having a high degree of sphericity.

螢光體的平均一次粒徑可藉由以下的方法來求出。根據利用掃描型電子顯微鏡(Scanning Electron Microscope,SEM)觀察螢光體所獲得的二維圖像,算出以2點與螢光體的外緣相交的直線的該2個交點間的距離變成最大者,並將其定義為粒徑。進而對任意的20個不同的螢光體進行相同的測定,將所獲得的粒徑的平均值設為平均一次粒徑。例如,當測定含有螢光體的樹脂組成物中所存在的螢光體的粒徑時,可藉由機械研磨法、切片機法、截面拋光儀法(Cross-section Polisher,CP)及聚焦離子束(Focused Ion Beam,FIB)加工法的任一種方法,進行含有螢光體的樹脂組成物的剖面研磨後,根據利用掃描型電子顯微鏡(SEM)觀察所獲得的研磨剖面所獲得的二維圖像,以與所述方法相同的方式算出平均一次粒徑。The average primary particle diameter of the phosphor can be obtained by the following method. According to the two-dimensional image obtained by observing the phosphor by a scanning electron microscope (SEM), the distance between the two intersections of the straight line intersecting the outer edge of the phosphor at two points is calculated to be the largest. And define it as the particle size. Further, the same measurement was performed on any of the 20 different phosphors, and the average value of the obtained particle diameters was defined as the average primary particle diameter. For example, when measuring the particle diameter of the phosphor present in the resin composition containing the phosphor, it can be mechanically ground, sliced, cross-section Polisher (CP), and focused ion. A method of processing a cross-section of a resin composition containing a phosphor, and then obtaining a two-dimensional image obtained by observing a polished cross section by a scanning electron microscope (SEM). For example, the average primary particle diameter was calculated in the same manner as the above method.

相對於將(A)成分、(B)成分及(C)成分合計而成的100重量份,本發明的樹脂組成物中可含有的螢光體量較佳為20重量份~500重量份。藉由將螢光體含量設為所述範圍內,可防止螢光體的再凝聚,並獲得良好的分散穩定性。The amount of the phosphor which can be contained in the resin composition of the present invention is preferably from 20 parts by weight to 500 parts by weight per 100 parts by weight of the total of the component (A), the component (B) and the component (C). By setting the phosphor content within the above range, re-agglomeration of the phosphor can be prevented, and good dispersion stability can be obtained.

(無機粒子) 本發明的樹脂組成物較佳為含有無機粒子及/或矽酮微粒子。作為無機粒子,可列舉金屬粒子、金屬氮化物粒子、金屬氧化物粒子、金屬鹽粒子等,尤其可較佳地使用金屬氧化物粒子。(Inorganic Particles) The resin composition of the present invention preferably contains inorganic particles and/or fluorenone fine particles. Examples of the inorganic particles include metal particles, metal nitride particles, metal oxide particles, metal salt particles, and the like, and in particular, metal oxide particles can be preferably used.

作為金屬氧化物粒子的例子,可列舉二氧化矽、氧化鋁、二氧化鈦、氧化鋯、氧化釔、氧化鈰、氧化鎂、氧化鋅、氧化錳、氧化銅、氧化鐵、氧化鈥、氧化鉛、氧化錫等,尤其就容易分散於組成物中的方面而言,較佳為氧化鋁。藉由在本發明的樹脂組成物中含有無機粒子,該樹脂組成物的散熱性提昇,可抑制樹脂的熱劣化。特佳為選自由二氧化矽、氧化鋁、二氧化鈦、氧化鎂及氮化鋁所組成的群組中的一種以上。Examples of the metal oxide particles include cerium oxide, aluminum oxide, titanium oxide, zirconium oxide, cerium oxide, cerium oxide, magnesium oxide, zinc oxide, manganese oxide, copper oxide, iron oxide, cerium oxide, lead oxide, and oxidation. Tin or the like is preferably alumina in terms of being easily dispersed in the composition. By containing the inorganic particles in the resin composition of the present invention, the heat dissipation property of the resin composition is improved, and thermal deterioration of the resin can be suppressed. It is particularly preferably one or more selected from the group consisting of cerium oxide, aluminum oxide, titanium oxide, magnesium oxide, and aluminum nitride.

作為矽酮微粒子,較佳為由平均單元式(3)所表示的矽酮微粒子。As the fluorenone fine particles, the fluorenone fine particles represented by the average unit formula (3) are preferable.

[化3] [Chemical 3]

此處,R7 ~R9 為經取代或未經取代的烷基,分別可相同,亦可不同。t、u、及w為表示各括號內的構成單元的比例的數字,且滿足0.50≦t≦0.95、0.05≦u+w≦0.50、t+u+w=1.0。Here, R 7 to R 9 are a substituted or unsubstituted alkyl group, and they may be the same or different. t, u, and w are numbers indicating the ratio of constituent units in each parenthesis, and satisfy 0.50 ≦ t ≦ 0.95, 0.05 ≦ u + w ≦ 0.50, and t + u + w = 1.0.

於本發明中,作為矽酮微粒子,亦可使用市售品。例如可列舉:KMP-590、KMP-597、KMP-598、KMP-594、KMP-701、X-52-854、X-52-875、X-52-1621(以上,信越化學工業(股份)製造); EP-5500、EP-2601、EP-2720、EP-2600、E-606(以上,東麗・道康寧(股份)製造); MSP-N050、MSP-N080、NH-RAS06、MSP-TK04、西爾珂如斯塔(Silcrusta)MK03、MSP-SN05、MSP-SN08、NH-RASN06、MSP-TKN04、MSP-150、MSP-200、MSP-3500(以上,日興利卡(Nikko Rica)(股份)製造); 托斯波(Tospearl)120、托斯波(Tospearl)130、托斯波(Tospearl)145、托斯波(Tospearl)240(以上,日本邁圖高新材料(合)製造)等,但並不限定於該些市售品。可單獨使用該些市售品,亦可混合多種。In the present invention, a commercially available product can also be used as the fluorenone fine particles. For example, KMP-590, KMP-597, KMP-598, KMP-594, KMP-701, X-52-854, X-52-875, X-52-1621 (above, Shin-Etsu Chemical Industry Co., Ltd.) Manufacturing); EP-5500, EP-2601, EP-2720, EP-2600, E-606 (above, manufactured by Toray Dow Corning (share)); MSP-N050, MSP-N080, NH-RAS06, MSP-TK04 , Silcrusta MK03, MSP-SN05, MSP-SN08, NH-RASN06, MSP-TKN04, MSP-150, MSP-200, MSP-3500 (above, Nikko Rica) Share) manufacturing); Tosporl 120, Tospearl 130, Tospearl 145, Tospearl 240 (above, Japan Momentive Advanced Materials Co., etc.), but not Limited to these commercial items. These commercially available products may be used singly or in combination.

藉由在本發明的樹脂組成物中含有矽酮微粒子,螢光體的分散穩定性提昇,因此可更高濃度地填充螢光體。若組成物中的螢光體的填充率上昇,則該樹脂組成物的導熱率上昇,因此可防止螢光體蓄熱,並可提高該樹脂組成物的耐熱性。By containing the fluorenone fine particles in the resin composition of the present invention, the dispersion stability of the phosphor is improved, so that the phosphor can be filled at a higher concentration. When the filling rate of the phosphor in the composition is increased, the thermal conductivity of the resin composition is increased. Therefore, heat storage of the phosphor can be prevented, and heat resistance of the resin composition can be improved.

作為本發明的樹脂組成物中的無機粒子及/或矽酮微粒子的含量,相對於將(A)成分、(B)成分及(C)成分合計而成的100 wt%,下限較佳為5重量份以上,更佳為10重量份以上。另外,上限較佳為50重量份以下,更佳為30重量份以下。The content of the inorganic particles and/or the fluorenone fine particles in the resin composition of the present invention is preferably 5 in terms of 100 wt% of the total of the components (A), (B) and (C). It is more than 10 parts by weight or more, more preferably 10 parts by weight or more. Further, the upper limit is preferably 50 parts by weight or less, more preferably 30 parts by weight or less.

藉由含有5重量份以上的無機粒子,可獲得特別良好的散熱效果。另一方面,藉由含有50重量份以下,而抑制無機粒子的凝聚。藉由含有5重量份以上的矽酮微粒子,可獲得特別良好的螢光體分散穩定化效果,另一方面,藉由含有50重量份以下,而不會使該樹脂組成物的黏度過度地上昇。By containing 5 parts by weight or more of inorganic particles, a particularly good heat dissipation effect can be obtained. On the other hand, by containing 50 parts by weight or less, aggregation of inorganic particles is suppressed. By containing 5 parts by weight or more of the fluorenone fine particles, a particularly good phosphor dispersion stabilizing effect can be obtained, and on the other hand, by containing 50 parts by weight or less, the viscosity of the resin composition is not excessively increased. .

無機粒子及矽酮微粒子的尺寸並無特別限制,但於藉由雷射繞射散射式粒度分佈測定法所獲得的體積基準粒度分佈中,自小粒徑側的累計通過率50%的粒徑(D50)及/或平均一次粒徑較佳為0.01 μm~100 μm。若粒徑為所述範圍內,則該樹脂組成物中的螢光體的分散穩定性可維持良好的狀態。The size of the inorganic particles and the fluorenone fine particles is not particularly limited, but in the volume-based particle size distribution obtained by the laser diffraction scattering particle size distribution measurement, the cumulative particle diameter from the small particle diameter side is 50%. The (D50) and/or the average primary particle diameter is preferably from 0.01 μm to 100 μm. When the particle diameter is within the above range, the dispersion stability of the phosphor in the resin composition can be maintained in a good state.

平均一次粒徑可與螢光體同樣地藉由以下的方法來求出。根據利用掃描型電子顯微鏡(SEM)觀察無機粒子及/或矽酮微粒子所獲得的二維圖像,算出以2點與該粒子的外緣相交的直線的該2個交點間的距離變成最大者,並將其定義為粒徑。進而對任意的20個不同的該粒子進行相同的測定,將所獲得的粒徑的平均值設為平均一次粒徑。例如,當測定樹脂組成物中所存在的無機粒子及/或矽酮微粒子的粒徑時,可藉由機械研磨法、切片機法、CP法(Cross-section Polisher)及聚焦離子束(FIB)加工法的任一種方法,進行樹脂組成物的剖面研磨後,根據利用掃描型電子顯微鏡(SEM)觀察所獲得的研磨剖面所獲得的二維圖像,以與所述方法相同的方式算出平均一次粒徑。The average primary particle diameter can be obtained by the following method similarly to the phosphor. According to a two-dimensional image obtained by observing inorganic particles and/or fluorenone microparticles by a scanning electron microscope (SEM), the distance between the two intersections of the straight line intersecting the outer edge of the particle at two points is calculated to be the largest. And define it as the particle size. Further, the same measurement was performed on any of the 20 different particles, and the average value of the obtained particle diameters was defined as the average primary particle diameter. For example, when measuring the particle diameter of inorganic particles and/or fluorene ketone microparticles present in the resin composition, mechanical milling, slicer method, CP method (Cross-section Polisher), and focused ion beam (FIB) can be used. In any of the processing methods, after the cross-section polishing of the resin composition, the two-dimensional image obtained by observing the obtained polishing cross section by a scanning electron microscope (SEM) is averaged once in the same manner as the above method. Particle size.

於本實施形態中所使用的組成物中,除所述以外,於無損本發明的作用・效果的範圍內,亦可任意地調配其他成分。具體而言,可列舉:自由基抑制劑、紫外線吸收劑、接著性改良劑、阻燃劑、界面活性劑、保存穩定改良劑、抗臭氧劣化劑、光穩定劑、增黏劑、塑化劑、抗氧化劑、導電性賦予劑、抗靜電劑、放射線阻擋劑、有機溶媒等。該些成分可單獨使用一種,亦可併用兩種以上。In addition to the above, the components used in the present embodiment may be arbitrarily blended with other components within the range in which the effects and effects of the present invention are not impaired. Specific examples thereof include a radical inhibitor, an ultraviolet absorber, an adhesion improver, a flame retardant, a surfactant, a storage stability improver, an ozone degradant, a light stabilizer, a tackifier, and a plasticizer. An antioxidant, a conductivity imparting agent, an antistatic agent, a radiation blocking agent, an organic solvent, and the like. These components may be used alone or in combination of two or more.

本發明的樹脂組成物亦可為片狀成形物。即,其為至少含有(A)與(B)的成分,進而含有(C)成分的片狀成形物。該樹脂組成物因螢光體的分散穩定性優異,故即便於成形為片狀的情況下,亦可將螢光體以均勻的濃度成形為所期望的厚度。具體而言,將該樹脂組成物塗佈於基底基板上,並進行乾燥,藉此使片材成形。The resin composition of the present invention may also be a sheet-like formed article. In other words, it is a sheet-like molded article containing at least the components (A) and (B) and further containing the component (C). Since the resin composition is excellent in dispersion stability of the phosphor, even when it is formed into a sheet shape, the phosphor can be molded into a desired thickness at a uniform concentration. Specifically, the resin composition is applied onto a base substrate and dried to form a sheet.

對螢光體片材的製作方法進行說明。再者,以下為一例,螢光體片材的製作方法並不限定於此。A method of producing a phosphor sheet will be described. In the following, as an example, the method of producing the phosphor sheet is not limited thereto.

首先,製作含有螢光體的樹脂組成物作為螢光體片材形成用的塗佈液。含有螢光體的樹脂組成物藉由將螢光體與樹脂組成物在適當的溶媒中混合而獲得。First, a resin composition containing a phosphor is prepared as a coating liquid for forming a phosphor sheet. The resin composition containing a phosphor is obtained by mixing a phosphor and a resin composition in a suitable solvent.

溶媒只要是可調整流動狀態的樹脂的黏度者,則並無特別限定。例如可列舉:甲苯、甲基乙基酮、甲基異丁基酮、己烷、丙酮、萜品醇等。The solvent is not particularly limited as long as it is a viscosity of a resin in which the flow state can be adjusted. For example, toluene, methyl ethyl ketone, methyl isobutyl ketone, hexane, acetone, terpineol, etc. are mentioned.

以變成規定的組成的方式將該些成分調配後,利用均質機、自轉公轉型攪拌機、三輥機、球磨機、行星式球磨機、珠磨機等攪拌・混練機均質地進行混合分散,藉此可獲得含有螢光體的樹脂組成物。於混合分散後、或混合分散的過程中,亦可較佳地在真空或減壓條件下進行脫泡。The ingredients are blended in such a manner as to have a predetermined composition, and then uniformly mixed and dispersed by a stirring and kneading machine such as a homogenizer, a self-rotating mixer, a three-roll mill, a ball mill, a planetary ball mill, or a bead mill. A resin composition containing a phosphor is obtained. Defoaming may also preferably be carried out under vacuum or reduced pressure during mixing or dispersion or during mixing and dispersion.

繼而,將含有螢光體的樹脂組成物塗佈於基底基板上。作為基底基板,並無特別限制,可使用:鋁(亦包含鋁合金)、鋅、銅、鐵等的金屬板或箔、乙酸纖維素、玻璃、陶瓷、聚對苯二甲酸乙二酯(Polyethylene terephthalate,PET)膜、聚丙烯(Polypropylene,PP)膜、聚苯硫醚(Polyphenylene sulfide,PPS)膜、聚醯亞胺膜、聚醯胺膜、聚碳酸酯膜、芳族聚醯胺膜等。該些之中,就將螢光體片材貼附於LED元件上時的接著性而言,基底基板較佳為柔軟的膜狀。另外,為了於對膜狀的基底基板進行處理時無斷裂等之虞,較佳為強度高的膜。於該些要求特性或經濟性方面,較佳為樹脂膜,該些之中,於經濟性、處理性方面,較佳為PET膜。另外,於樹脂的硬化或將螢光體片材貼合於LED元件上時需要200℃以上的高溫的情況下,於耐熱性方面,較佳為聚醯亞胺膜。就片材的剝離的容易性而言,較佳為事先對基底基板的表面進行脫模處理。基底基板的厚度並無特別限制,下限較佳為25 μm以上,更佳為40 μm以上。另外,上限較佳為5000 μm以下,更佳為3000 μm以下。Then, the resin composition containing the phosphor is applied onto the base substrate. The base substrate is not particularly limited, and aluminum (including aluminum alloy), metal plates or foils such as zinc, copper, and iron, cellulose acetate, glass, ceramics, and polyethylene terephthalate (Polyethylene) can be used. Terephthalate, PET) film, polypropylene (PP) film, polyphenylene sulfide (PPS) film, polyimide film, polyamide film, polycarbonate film, aromatic polyamide film, etc. . Among these, in terms of adhesion when the phosphor sheet is attached to the LED element, the base substrate is preferably a soft film. Further, in order to treat the film-form base substrate without breaking or the like, a film having high strength is preferable. In view of such required characteristics and economical efficiency, a resin film is preferred, and among these, a PET film is preferred in terms of economy and handleability. Further, in the case where curing of the resin or bonding of the phosphor sheet to the LED element requires a high temperature of 200 ° C or higher, a polyimide film is preferable in terms of heat resistance. In terms of easiness of peeling off the sheet, it is preferred to perform a mold release treatment on the surface of the base substrate in advance. The thickness of the base substrate is not particularly limited, and the lower limit is preferably 25 μm or more, and more preferably 40 μm or more. Further, the upper limit is preferably 5,000 μm or less, more preferably 3,000 μm or less.

作為螢光體樹脂組成物的塗佈方法,可使用反向輥塗機(reverse roll coater)、刮刀塗佈機(blade coater)、吻合式塗佈機(kiss coater)、縫模塗佈機(slit die coater)、直接凹版塗佈機(direct gravure coater)、間接凹版塗佈機(offset gravure coater)、自然輥塗佈機(natural roll coater)、氣刀式塗佈機(air knife coater)、輥式刮刀塗佈機(roll blade coater)、可調刮棒輥式刮刀塗佈機(vari-bar roll blade coater)、雙流塗佈機(two stream coater)、棒式塗佈機(rod coater)、線棒塗佈機(wire bar coater)、敷料器(applicator)、浸塗機(dip coater)、簾幕式塗佈機(curtain coater)、旋轉塗佈機(spin coater)、網版印刷等來進行,但並不限定於此。所述方法之中,為了獲得膜厚均勻性,較佳為藉由縫模塗佈機來進行塗佈。螢光體片材的乾燥可使用熱風乾燥機或紅外線乾燥機等一般的加熱裝置來進行。另外,片材的加熱硬化可使用熱風乾燥機或紅外線乾燥機等一般的加熱裝置。於此情況下,加熱硬化條件通常為40℃~250℃、1分鐘~5小時,較佳為100℃~200℃、2分鐘~3小時。As a coating method of the phosphor resin composition, a reverse roll coater, a blade coater, a kiss coater, a slit coater (a slit coater) can be used. A slit die coater, a direct gravure coater, an offset gravure coater, a natural roll coater, an air knife coater, Roll blade coater, vari-bar roll blade coater, two stream coater, rod coater , wire bar coater, applicator, dip coater, curtain coater, spin coater, screen printing, etc. To proceed, but is not limited to this. Among the above methods, in order to obtain film thickness uniformity, coating is preferably carried out by a slit die coater. The drying of the phosphor sheet can be carried out using a general heating device such as a hot air dryer or an infrared dryer. Further, as the heat curing of the sheet, a general heating device such as a hot air dryer or an infrared dryer can be used. In this case, the heat curing conditions are usually 40 ° C to 250 ° C for 1 minute to 5 hours, preferably 100 ° C to 200 ° C for 2 minutes to 3 hours.

螢光體片材的膜厚由螢光體含量與所期望的光學特性來決定。如上所述,就分散穩定性的觀點而言,螢光體含量存在極限,因此膜厚較佳為有10 μm以上。就提高螢光體片材的光學特性・耐熱性的觀點而言,含有螢光體的片狀成形物的膜厚較佳為1000 μm以下,更佳為200 μm以下,進而更佳為100 μm以下。藉由將螢光體片材設為1000 μm以下的膜厚,而將來自LED元件的發熱高效地散熱,並減少該片材中的蓄熱量,因此耐熱性提昇。The film thickness of the phosphor sheet is determined by the phosphor content and the desired optical characteristics. As described above, from the viewpoint of dispersion stability, the phosphor content has a limit, and therefore the film thickness is preferably 10 μm or more. The film thickness of the sheet-like molded article containing the phosphor is preferably 1000 μm or less, more preferably 200 μm or less, and still more preferably 100 μm, from the viewpoint of improving the optical characteristics and heat resistance of the phosphor sheet. the following. By setting the phosphor sheet to a film thickness of 1000 μm or less, heat generation from the LED element is efficiently dissipated, and heat storage in the sheet is reduced, so that heat resistance is improved.

本發明中的螢光體片材的膜厚是指基於JIS K7130(1999)塑膠-膜及片材-厚度測定方法中的利用機械式掃描的厚度的測定方法A法所測定的膜厚(平均膜厚)。The film thickness of the phosphor sheet in the present invention is a film thickness measured by the method A for measuring the thickness by mechanical scanning in the plastic-film and sheet-thickness measurement method of JIS K7130 (1999). Film thickness).

通常,LED發光裝置處於自LED晶片中產生大量的熱的環境中。藉由此種發熱,螢光體的溫度上昇,螢光體內的活化材失活,藉此發光裝置的全光束下降。因此,重要的是如何將所產生的熱高效地散熱。於本發明中,藉由將片材膜厚設為所述範圍,可獲得耐熱性優異的螢光體片材。Typically, LED lighting devices are in an environment that generates a significant amount of heat from the LED wafer. By such heat generation, the temperature of the phosphor rises and the active material in the phosphor is deactivated, whereby the total light beam of the light-emitting device is lowered. Therefore, it is important how to efficiently dissipate the generated heat. In the present invention, by setting the sheet thickness to the above range, a phosphor sheet excellent in heat resistance can be obtained.

另外,若片材膜厚存在不均,則於各LED晶片中螢光體量產生差異,作為結果,發光光譜(色溫、亮度、色度)中產生不均。因此,片材膜厚的不均較佳為±5%以內,更佳為±3%以內。Further, when the film thickness of the sheet is uneven, the amount of the phosphor varies in each of the LED chips, and as a result, unevenness occurs in the emission spectrum (color temperature, luminance, and chromaticity). Therefore, the unevenness of the film thickness of the sheet is preferably within ±5%, more preferably within ±3%.

再者,此處所述的膜厚不均是基於JIS K7130(1999)塑膠-膜及片材-厚度測定方法中的利用機械式掃描的厚度的測定方法A法來測定膜厚,並利用下述所示的式來算出。In addition, the film thickness unevenness described here is based on the measurement method of the thickness of the thickness of the mechanical scanning by the method A of the plastic-film and sheet-thickness measurement method of JIS K7130 (1999), and the film thickness is used, and the following is used. Calculated by the formula shown.

更具體而言,使用利用機械式掃描的厚度的測定方法A法的測定條件,並使用市售的接觸式的厚度計等測微計來測定膜厚,計算所獲得的膜厚的最大值或最小值與平均膜厚的差,該值除以平均膜厚後由百分率來表示的值成為膜厚不均B(%)。More specifically, the measurement conditions of the thickness measurement method by the mechanical scanning method are used, and the film thickness is measured using a micrometer such as a commercially available contact type thickness gauge, and the maximum value of the obtained film thickness is calculated or The difference between the minimum value and the average film thickness, and the value expressed by the percentage after dividing the value by the average film thickness becomes the film thickness unevenness B (%).

膜厚不均B(%)={(最大膜厚偏差值﹡-平均膜厚)/平均膜厚}×100 ﹡最大膜厚偏差值選擇膜厚的最大值或最小值之中,與平均膜厚的差大者。Film thickness unevenness B (%) = {(maximum film thickness deviation value * - average film thickness) / average film thickness} × 100 * Maximum film thickness deviation value is selected from the maximum or minimum value of the film thickness, and the average film Thick and poor.

自本發明的含有螢光體的樹脂組成物所成形的螢光體片材較佳為25℃下的儲存彈性係數為0.01 MPa以上,且加熱至100℃時的儲存彈性係數低於25℃及200℃下的各自的儲存彈性係數。The phosphor sheet formed from the phosphor-containing resin composition of the present invention preferably has a storage elastic modulus of not less than 25 MPa at 25 ° C and a storage elastic modulus of less than 25 ° C when heated to 100 ° C and The respective storage elastic coefficients at 200 °C.

此處所述的儲存彈性係數是指進行動態黏彈性測定時的儲存彈性係數。所謂動態黏彈性,是指如下的方法:當以某一正弦頻率對材料施加剪切應變(shearing strain)時,將達到穩定狀態時所出現的剪切應力分解成與應變相位一致的成分(彈性的成分)、及與應變相位相差90°的成分(黏性的成分),並對材料的動態的力學特性進行分析。此處,與剪切應變相位一致的應力成分除以剪切應變而成者為儲存彈性係數G',且表示相對於各溫度下的動態的應變的材料的變形、追隨,因此與材料的加工性或接著性密切相關。The storage elastic coefficient described herein refers to the storage elastic coefficient when the dynamic viscoelasticity measurement is performed. The so-called dynamic viscoelasticity refers to a method of decomposing the shear stress occurring in a steady state into a component corresponding to the strain phase when a shear strain is applied to the material at a certain sinusoidal frequency (elasticity). The composition) and the composition (viscosity component) which is 90° out of phase with the strain phase, and analyzes the dynamic mechanical properties of the material. Here, the stress component that matches the shear strain phase is divided by the shear strain to store the elastic coefficient G′, and represents the deformation and follow-up of the material with respect to the dynamic strain at each temperature. Sexuality or adhesion is closely related.

螢光體片材於25℃下的儲存彈性係數為0.01 MPa以上,且加熱至100℃時的儲存彈性係數低於25℃及200℃下的各自的儲存彈性係數,故若自25℃起進行加熱,則該片材的儲存彈性係數下降,對於對象物的形狀快速地變形並追從,顯現高黏著性。因此,可不使用接著劑,而將該片材直接貼附於LED元件上或該元件上所形成的聚有機矽氧烷層上。只要是於100℃下可獲得未滿0.01 MPa的儲存彈性係數的螢光體片材,則即便未滿100℃,貼附性亦伴隨溫度上昇而變得良好,但為了獲得實用的接著性,適宜的是80℃以上。另外,此種螢光體片材藉由加熱至超過100℃,儲存彈性係數進一步下降,貼附性變得良好,但於超過150℃的溫度下,通常(A)成分與(B)成分進行熱硬化反應,因此儲存彈性係數開始上昇,黏著性下降。因此,適宜的加熱貼附溫度為50℃~150℃。The storage elastic modulus of the phosphor sheet at 25 ° C is 0.01 MPa or more, and the storage elastic modulus when heated to 100 ° C is lower than the respective storage elastic coefficients at 25 ° C and 200 ° C, so if it is carried out from 25 ° C When heated, the storage elastic modulus of the sheet is lowered, and the shape of the object is rapidly deformed and followed, showing high adhesion. Therefore, the sheet can be directly attached to the LED element or the polyorganosiloxane layer formed on the element without using an adhesive. As long as a phosphor sheet having a storage elastic modulus of less than 0.01 MPa is obtained at 100 ° C, the adhesion is improved with temperature rise even if it is less than 100 ° C, but in order to obtain practical adhesion, Suitably it is above 80 °C. Further, when the phosphor sheet is heated to more than 100 ° C, the storage elastic modulus is further lowered, and the adhesion is improved. However, at a temperature exceeding 150 ° C, the components (A) and (B) are usually used. The heat hardening reaction, so the storage elastic modulus starts to rise and the adhesion decreases. Therefore, a suitable heating and attaching temperature is 50 ° C to 150 ° C.

藉由螢光體片材的25℃下的儲存彈性係數為0.01 MPa以上,於室溫(25℃)下的模具沖裁加工或利用刃具的切斷加工中,能夠以高尺寸精度進行加工。為了本發明的目的,室溫下的儲存彈性係數的上限並無特別限制,但若考慮減少與LED元件貼合後的應力應變的必要性,則理想的是1 GPa以下。為了本發明的目的,100℃下的儲存彈性係數的下限並無特別限制,但若於朝LED元件上的加熱貼附時流動性過高,則無法保持螢光體片材的膜厚,因此理想的是0.001 MPa以上。The storage elastic modulus at 25° C. of the phosphor sheet is 0.01 MPa or more, and can be processed with high dimensional accuracy in the die blanking at room temperature (25° C.) or the cutting process using the cutting tool. For the purpose of the present invention, the upper limit of the storage elastic modulus at room temperature is not particularly limited, but it is preferably 1 GPa or less in consideration of the necessity of reducing the stress strain after bonding to the LED element. For the purpose of the present invention, the lower limit of the storage elastic modulus at 100 ° C is not particularly limited. However, if the fluidity is too high when attached to the LED element, the film thickness of the phosphor sheet cannot be maintained. Ideally it is 0.001 MPa or more.

自本發明的樹脂組成物所成形的螢光體片材於150℃下進行100小時加熱處理後的色度與加熱處理前相比,較佳為Clx±0.01、且Cly±0.01的範圍內。The chromaticity of the phosphor sheet formed by the resin composition of the present invention after heat treatment at 150 ° C for 100 hours is preferably in the range of Clx ± 0.01 and Cly ± 0.01 as compared with that before the heat treatment.

對片材的色度測定方法進行說明。再者,以下為一例,螢光體片材的色度測定方法並不限定於此。於將螢光體片材貼附於藍色LED元件上而成的發光裝置中流入20 mA的電流來使LED元件點燈,並使用瞬間多重測光系統(MCPD-3000,大塚電子(股份)製造)進行測定。繼而,可於使該發光裝置點燈的狀態下放入至熱風烘箱中,以150℃進行100小時加熱處理後,利用測光系統再次進行測定,並算出加熱處理前後的色度變化(最大值與最小值的差)。The method of measuring the chromaticity of the sheet will be described. In the following, as an example, the method of measuring the chromaticity of the phosphor sheet is not limited thereto. Into a light-emitting device in which a phosphor sheet is attached to a blue LED element, a current of 20 mA is supplied to light the LED element, and an instantaneous multi-time measuring system (MCPD-3000, manufactured by Otsuka Electronics Co., Ltd.) is used. ) Perform the measurement. Then, the light-emitting device can be placed in a hot air oven in a state where the light-emitting device is turned on, and heat-treated at 150 ° C for 100 hours, and then measured again by the photometric system, and the chromaticity change before and after the heat treatment is calculated (maximum value and The difference between the minimum values).

貼附有螢光體片材的發光裝置的色度變化主要起因於由高溫所引起的螢光體劣化與樹脂成分的劣化。本發明的螢光體片材藉由螢光體的優異的分散穩定性而可薄膜化,並可將來自LED元件的發熱高效地散熱,因此可抑制螢光體的劣化。The change in chromaticity of the light-emitting device to which the phosphor sheet is attached is mainly caused by deterioration of the phosphor due to high temperature and deterioration of the resin component. The phosphor sheet of the present invention can be thinned by the excellent dispersion stability of the phosphor, and can efficiently dissipate heat generated from the LED element, thereby suppressing deterioration of the phosphor.

進而,構成螢光體片材的樹脂成分為(A)成分及(C)成分,鍵結於矽上的取代基為烷基、烯基、環氧基、胺基及氫原子。因此,即便於150℃以上的高溫環境下,於樹脂結構上亦不會產生自由基,因此不會引起成為藍色吸收(著色)的原因的共軛系形成,而難以產生熱劣化。就以上的觀點而言,可將發光裝置的色度變化抑制於所述範圍內。Further, the resin component constituting the phosphor sheet is the component (A) and the component (C), and the substituent bonded to the oxime is an alkyl group, an alkenyl group, an epoxy group, an amine group, and a hydrogen atom. Therefore, even in a high-temperature environment of 150 ° C or higher, radicals are not generated in the resin structure, so that conjugate formation which is a cause of blue absorption (coloring) is not caused, and thermal deterioration is hard to occur. From the above viewpoints, the chromaticity change of the light-emitting device can be suppressed within the above range.

另外,於將螢光體片材貼附在藍色LED元件上而成的發光裝置中,於LED周圍溫度(Ta)100℃下連續點燈1000小時的情況下的光束維持率較佳為90%以上。Further, in the light-emitting device in which the phosphor sheet is attached to the blue LED element, the light beam maintenance ratio is preferably 90 when the LED is continuously lit for 1000 hours at a temperature (Ta) of 100 ° C. %the above.

對發光裝置的光束測定方法進行說明。再者,以下為一例,光束測定方法並不限定於此。於將螢光體片材貼附於藍色LED元件上而成的發光裝置中流入20 mA的電流來使LED元件點燈,並使用瞬間多重測光系統(MCPD-300,大塚電子(股份)製造)測定全光束(初始值A)。繼而,將該發光裝置放入至設定成100℃的熱風烘箱中,於已點燈的狀態下放置1000小時,其後,放置冷卻至25℃為止,再次測定全光束(測定值B)。繼而,將各個測定值代入至以下的式中,而算出光束維持率。 光束維持率={(測定值B)/(初始值A)}×100。A method of measuring a light beam of a light-emitting device will be described. In addition, the following is an example, and the beam measuring method is not limited to this. Into a light-emitting device in which a phosphor sheet is attached to a blue LED element, a current of 20 mA is supplied to light the LED element, and an instantaneous multi-time measuring system (MCPD-300, manufactured by Otsuka Electronics Co., Ltd.) is used. ) Determine the full beam (initial value A). Then, the light-emitting device was placed in a hot air oven set at 100 ° C, left in a lighted state for 1000 hours, and then left to cool to 25 ° C, and the total light beam (measured value B) was measured again. Then, each measurement value was substituted into the following formula, and the beam maintenance rate was calculated. Beam maintenance rate = {(measured value B) / (initial value A)} × 100.

自本發明的樹脂組成物與螢光體所成形的螢光體片材可作為波長轉換層貼附於LED元件上或該元件上所形成的矽酮樹脂層上,而用作發光裝置。另外,亦可以不僅覆蓋LED元件的正上方,而且覆蓋側面的方式貼附來使用。The phosphor sheet formed from the resin composition of the present invention and the phosphor can be attached as a wavelength conversion layer to the LED element or the fluorenone resin layer formed on the element, and used as a light-emitting device. Further, it may be attached not only to cover the upper side of the LED element but also to cover the side surface.

作為發光裝置的製造方法,當將該螢光體片材貼附於LED元件上或該元件上所形成的矽酮樹脂層上時,將元件加熱至規定的溫度後貼附。加熱溫度為50℃以上、200℃以下。藉由設為50℃以上,(C)成分充分地軟化,可將儲存彈性係數降低至該螢光體片材顯現接著性的程度。另外,藉由設為200℃以下,可控制(A)成分的熱硬化反應,並適宜確保貼附所需的儲存彈性係數。As a method of manufacturing a light-emitting device, when the phosphor sheet is attached to an enamel resin layer formed on the LED element or the element, the element is heated to a predetermined temperature and then attached. The heating temperature is 50 ° C or more and 200 ° C or less. When the component (C) is sufficiently softened by setting it to 50 ° C or more, the storage elastic modulus can be lowered to the extent that the phosphor sheet exhibits adhesion. Further, by setting it to 200 ° C or lower, the thermosetting reaction of the component (A) can be controlled, and the storage elastic modulus required for attachment is suitably ensured.

為了提昇本發明的LED發光裝置的可靠性,較佳為在含有螢光體的片狀成形物與LED元件之間無應力應變。因此,貼合溫度較佳為設為LED發光裝置的動作溫度附近,較佳為動作溫度的±20℃以內。於點燈時,LED發光裝置的溫度上昇至70℃~180℃為止。因此,就使動作溫度與貼合溫度接近的意義而言,貼合溫度亦理想的是50℃以上、200℃以下。In order to improve the reliability of the LED light-emitting device of the present invention, it is preferable that there is no stress strain between the sheet-like molded article containing the phosphor and the LED element. Therefore, the bonding temperature is preferably set to be near the operating temperature of the LED light-emitting device, and preferably within ±20 °C of the operating temperature. At the time of lighting, the temperature of the LED lighting device rises to 70 ° C to 180 ° C. Therefore, the bonding temperature is preferably 50° C. or higher and 200° C. or lower in the sense that the operating temperature is close to the bonding temperature.

作為將螢光體片材貼合於LED元件上或該元件上所形成的矽酮樹脂層上的方法,只要是可於規定的溫度下進行加熱壓接的裝置,則可利用現有的任意的裝置。如後述般,有將該螢光體片材切斷成單片後,貼合於個別的LED元件上的方法;以及於統一貼合在鑲嵌有切割前的LED元件的晶圓上後,統一地進行晶圓的切割與螢光體片材的切斷的方法,於將螢光體片材分割成單片後貼合的方法的情況下,可利用覆晶接合機。當統一地貼附於晶圓級的LED元件上時,利用具有100 mm見方左右的加熱部分的加熱壓接工具等來貼合。於任一種情況下,均於高溫下將螢光體片材接著於LED元件上後,放置冷卻至室溫為止,然後將基底基板剝離。As a method of bonding the phosphor sheet to the fluorene-ketone resin layer formed on the LED element or the element, any conventional one can be used as long as it can be heated and pressure-bonded at a predetermined temperature. Device. As will be described later, there is a method in which the phosphor sheet is cut into a single sheet and then bonded to individual LED elements, and is uniformly bonded to a wafer on which the LED elements before cutting are mounted. A method of performing dicing of a wafer and cutting of a phosphor sheet by a method of dividing a phosphor sheet into a single sheet and bonding the same can be performed by a flip chip bonding machine. When uniformly attached to a wafer-level LED element, it is bonded by a heating crimping tool or the like having a heating portion of about 100 mm square. In either case, after the phosphor sheet is attached to the LED element at a high temperature, it is left to cool to room temperature, and then the base substrate is peeled off.

作為將螢光體片材貼合至LED元件的側面的方法,與所述相同,利用可加熱壓接的裝置,但於此情況下,較佳為首先將螢光體片材貼附於熔點為40℃~100℃左右的熱塑性樹脂基底基板上。As a method of bonding the phosphor sheet to the side surface of the LED element, as in the above, a heat pressable device is used, but in this case, it is preferred to first attach the phosphor sheet to the melting point. It is on a thermoplastic resin base substrate of about 40 ° C to 100 ° C.

朝熱塑性樹脂基底基板上的螢光體片材的貼附是於熱塑性樹脂基底基板軟化流動的狀態下按壓來進行。因此,貼附溫度較佳為熱塑性樹脂基底基板軟化並流動的程度的溫度。另外,為了防止空氣蓄積的殘存,較佳為於0.01 MPa以下的減壓下進行貼附。作為進行此種貼附的製造裝置,可例示真空隔膜層壓機等,但並不限定於此。The attachment of the phosphor sheet onto the thermoplastic resin base substrate is performed by pressing the thermoplastic resin base substrate in a softened state. Therefore, the attachment temperature is preferably a temperature at which the thermoplastic resin base substrate softens and flows. Moreover, in order to prevent the residual of air accumulation, it is preferable to attach under pressure reduction of 0.01 MPa or less. A vacuum diaphragm laminator or the like can be exemplified as the manufacturing apparatus for performing such attachment, but the invention is not limited thereto.

繼而,為了將螢光體片材貼合至LED元件的側面,將貼附於熱塑性樹脂基底基板上的螢光體片材加熱至用於基底基板的熱塑性樹脂的熔點以上,並以接觸LED元件的方式自上表面進行加壓積層,藉此可將螢光體片材貼合至LED元件的側面。Then, in order to bond the phosphor sheet to the side surface of the LED element, the phosphor sheet attached to the thermoplastic resin base substrate is heated to a temperature higher than the melting point of the thermoplastic resin for the base substrate, and the LED element is contacted. The pressure is laminated from the upper surface, whereby the phosphor sheet can be attached to the side surface of the LED element.

對將螢光體片材貼合於LED元件的上表面時的切斷加工的方法進行說明。有如下的方法:於朝LED元件上貼附前事先將螢光體片材切斷成單片,然後貼附於個別的LED元件上的方法;以及將螢光體片材貼附於晶圓級的LED元件上後,與晶圓的切割同時統一地切斷螢光體片材的方法。A method of cutting the phosphor sheet when it is bonded to the upper surface of the LED element will be described. There are the following methods: cutting a phosphor sheet into a single piece before attaching it to the LED element, and then attaching it to individual LED elements; and attaching the phosphor sheet to the wafer After the LED element of the stage, the method of uniformly cutting the phosphor sheet simultaneously with the cutting of the wafer.

於貼附前事先進行切斷的情況下,藉由利用雷射的加工或利用刃具的切削來將均勻地形成的螢光體片材加工成規定的形狀,並進行分割。利用雷射的加工因賦予高能量,故非常難以避免樹脂的燒焦或螢光體的劣化,理想的是利用刃具的切削。When the cutting is performed before the attachment, the uniformly formed phosphor sheet is processed into a predetermined shape by the processing using the laser or the cutting by the cutting tool, and the division is performed. Since the processing using the laser imparts high energy, it is extremely difficult to avoid the burnt of the resin or the deterioration of the phosphor, and it is desirable to use the cutting of the blade.

於利用刃具進行切斷方面,為了提昇加工性,螢光體片材於25℃下無黏性變得非常重要。作為利用刃具的切削方法,有將簡單的刃具壓入來切割的方法、及利用旋轉刀刃來切割的方法,可適宜地使用任一種方法。作為利用旋轉刀刃進行切斷的裝置,可適宜地利用被稱為切塊機(dicer)的用於將半導體基板切斷(切割)成個別的晶片的裝置。若使用切塊機,則可根據旋轉刀刃的厚度或條件設定而精密地控制分割線的寬度,因此可獲得比藉由簡單的刃具的壓入來進行切斷更高的加工精度。In order to improve the workability, it is very important that the phosphor sheet is non-stick at 25 ° C in order to improve the workability. As a cutting method using a cutting tool, there are a method of pressing a simple cutting tool and cutting it, and a method of cutting by a rotating blade, and any method can be suitably used. As a device for cutting by a rotary blade, a device called a dicer for cutting (cutting) a semiconductor substrate into individual wafers can be suitably used. When the dicer is used, the width of the dividing line can be precisely controlled according to the thickness or condition setting of the rotating blade, so that higher cutting accuracy can be obtained than cutting by a simple cutting tool.

當對與基底基板積層的狀態的螢光體片材進行切斷時,可連同基底基板一起單片化,或者亦可將螢光體片材單片化、且不切斷基底基板。或者亦可為切入不貫穿基底基板的切口線的所謂的半切(half cut)。使如所述般經單片化的螢光體片材加熱壓接於個別的LED元件的上表面。When the phosphor sheet in a state of being laminated with the base substrate is cut, it may be singulated together with the base substrate, or the phosphor sheet may be singulated without cutting the base substrate. Alternatively, it may be a so-called half cut that cuts into a slit line that does not penetrate the base substrate. The singulated phosphor sheet as described above is heat-compressed to the upper surface of the individual LED elements.

圖1表示將螢光體片材連同基底基板一起單片化時的單片化・LED元件貼合・切割的步驟的一例。於圖1的步驟中包括將螢光體片材切斷成單片的步驟、及對該切斷成單片的螢光體片材進行加熱後貼附於LED元件上的步驟。FIG. 1 shows an example of a procedure of bonding and dicing the singulation and LED elements when the phosphor sheet is singulated together with the base substrate. The step of FIG. 1 includes a step of cutting the phosphor sheet into a single sheet, and a step of heating the phosphor sheet cut into a single sheet and attaching it to the LED element.

圖1中(a)為將與基底基板2積層的狀態的本發明的螢光體片材1固定於臨時固定片材3上。於圖1所示的步驟中,因螢光體片材1與基底基板2均進行單片化,故以容易處理的方式先固定於臨時固定片材3上。In (a) of FIG. 1, the phosphor sheet 1 of the present invention in a state of being laminated with the base substrate 2 is fixed to the temporary fixing sheet 3. In the step shown in FIG. 1, since both the phosphor sheet 1 and the base substrate 2 are singulated, they are first fixed to the temporary fixing sheet 3 in an easy-to-handle manner.

繼而,如圖1中(b)所示般切斷螢光體片材1與基底基板2來進行單片化。Then, as shown in FIG. 1(b), the phosphor sheet 1 and the base substrate 2 are cut and singulated.

繼而,如圖1中(c)所示般於安裝在安裝基板5上的LED元件4上,使經單片化的螢光體片材1與基底基板材2對位,然後如圖1中(d)所示般利用加熱壓接工具進行壓接。此時,較佳為以不使空氣混入至螢光體片材1與LED元件4之間的方式,於真空下或減壓下進行壓接步驟。Then, as shown in FIG. 1(c), on the LED element 4 mounted on the mounting substrate 5, the singulated phosphor sheet 1 is aligned with the base substrate 2, and then as shown in FIG. (d) The crimping is performed by a heating crimping tool as shown. At this time, it is preferable to carry out the pressure bonding step under vacuum or under reduced pressure so that air is not mixed between the phosphor sheet 1 and the LED element 4.

壓接後放置冷卻至室溫為止,然後如圖1中(e)所示般剝離基底基板2。After the pressure bonding, it was left to cool to room temperature, and then the base substrate 2 was peeled off as shown in FIG. 1(e).

另外,當於基底基板連續的狀態下對螢光體片材進行單片化時,可直接統一地接著於切割前的晶圓級的LED元件上。Further, when the phosphor sheet is singulated in a state in which the base substrate is continuous, it can be directly and uniformly adhered to the wafer-level LED elements before the dicing.

圖2表示於基底基板連續的狀態下對螢光體片材進行單片化時的單片化・LED元件貼合・切割的步驟的一例。於圖2的步驟中,亦包括將螢光體片材切斷成單片的步驟、及對該切斷成單片的螢光體片材進行加熱後貼附於LED元件的上表面的步驟。FIG. 2 shows an example of a procedure of singulation and LED element bonding and dicing when the phosphor sheet is singulated in a state in which the base substrate is continuous. In the step of FIG. 2, the step of cutting the phosphor sheet into a single sheet and the step of heating the phosphor sheet cut into a single sheet and attaching to the upper surface of the LED element are also included. .

於圖2所示的步驟的例子中,首先於圖2中(b)所示的步驟中,當對螢光體片材1進行單片化時,不對基底基板2進行單片化。於圖2中(b)中,基底基板2完全未被切斷,但只要基底基板2連續,則亦可部分地切斷。In the example of the step shown in FIG. 2, first, in the step shown in (b) of FIG. 2, when the phosphor sheet 1 is singulated, the base substrate 2 is not singulated. In FIG. 2(b), the base substrate 2 is not cut at all, but the base substrate 2 may be partially cut as long as it is continuous.

繼而,如圖2中(c)所示,使經單片化的螢光體片材1與表面形成有切割前的LED元件的晶圓7對向,而進行對位。Then, as shown in FIG. 2(c), the singulated phosphor sheet 1 is aligned with the wafer 7 on the surface of which the LED element before cutting is formed, and is aligned.

於圖2中(d)所示的步驟中,利用加熱壓接工具,對螢光體片材1與表面形成有切割前的LED元件的晶圓7進行壓接。此時,此時,較佳為以不使空氣混入至螢光體片材1與LED元件4之間的方式,於真空下或減壓下進行壓接步驟。In the step shown in FIG. 2(d), the phosphor sheet 1 is pressure-bonded to the wafer 7 on which the LED element before cutting is formed by a heating and pressing tool. At this time, at this time, it is preferable to carry out the pressure bonding step under vacuum or under reduced pressure so that air is not mixed between the phosphor sheet 1 and the LED element 4.

壓接後放置冷卻至室溫為止,如圖2中(e)所示般剝離基底基板2後,切割晶圓來進行單片化,而如圖2中(f)所示般獲得經單片化的帶有螢光體片材的LED元件。After the pressure is placed and cooled to room temperature, the base substrate 2 is peeled off as shown in FIG. 2(e), and then the wafer is diced to be singulated, and a single piece is obtained as shown in FIG. 2(f). LED elements with phosphor sheets.

當將螢光體片材統一地接著於切割前的晶圓級的LED元件上時,於貼合後亦可與LED元件晶圓的切割一同切斷螢光體片材。When the phosphor sheet is uniformly attached to the wafer-level LED element before the dicing, the phosphor sheet can be cut together with the dicing of the LED element wafer after bonding.

圖3表示將螢光體片材與晶圓貼合後統一地進行切割時的步驟的一例。於圖3的步驟中包括對螢光體片材進行加熱後統一地貼附於多個LED元件的上表面的步驟、及對螢光體片材與LED元件進行統一切割的步驟。FIG. 3 shows an example of a procedure when the phosphor sheet is bonded to the wafer and then collectively cut. The step of FIG. 3 includes a step of uniformly heating the phosphor sheet and attaching it to the upper surface of the plurality of LED elements, and a step of uniformly cutting the phosphor sheet and the LED element.

於圖3的步驟中,不事先對本發明的螢光體片材1進行切斷加工,如圖3中(a)所示般使螢光體片材1之側與表面形成有切割前的LED元件的晶圓7對向來進行對位。In the step of FIG. 3, the phosphor sheet 1 of the present invention is not subjected to cutting processing in advance, and as shown in FIG. 3(a), the side of the phosphor sheet 1 and the surface thereof are formed with LEDs before cutting. The wafer 7 of the component is aligned in the opposite direction.

繼而,如圖3中(b)所示,利用加熱壓接工具對螢光體片材1與表面形成有切割前的LED元件的晶圓7進行壓接。此時,較佳為以不使空氣混入至螢光體片材1與LED元件4之間的方式,於真空下或減壓下進行壓接步驟。Then, as shown in FIG. 3(b), the phosphor sheet 1 and the wafer 7 on which the LED element before cutting is formed are pressure-bonded by a heating and pressing tool. At this time, it is preferable to carry out the pressure bonding step under vacuum or under reduced pressure so that air is not mixed between the phosphor sheet 1 and the LED element 4.

壓接後放置冷卻至室溫為止,如圖3中(c)所示般剝離基底基板2後,與切割晶圓同時地,切斷螢光體片材1來進行單片化,而如圖3中(d)所示般獲得經單片化的帶有螢光體片材的LED元件。After the pressure is placed and cooled to room temperature, the base substrate 2 is peeled off as shown in FIG. 3( c ), and the phosphor sheet 1 is cut and singulated simultaneously with the dicing of the wafer. A singulated LED element with a phosphor sheet is obtained as shown in (d) of 3 .

於採用所述圖1~圖3的任一者的步驟的情況下,當將本發明的螢光體片材貼附於上表面具有電極的LED元件上時,為了去除電極部分的螢光體片材,理想的是於螢光體片材的貼合前均事先對該部分進行開孔加工。開孔加工可適宜地使用雷射加工、模具沖孔、利用刃具的切斷等公知的方法,但雷射加工會引起樹脂的燒焦或螢光體的劣化,因此更理想的是利用模具的沖孔加工。In the case of employing the steps of any of the above-described FIGS. 1 to 3, when the phosphor sheet of the present invention is attached to an LED element having an electrode on its upper surface, in order to remove the phosphor of the electrode portion For the sheet, it is desirable that the portion is previously opened before the bonding of the phosphor sheet. A well-known method such as laser processing, die punching, and cutting by a cutting tool can be suitably used for the hole drilling, but laser processing causes burnt of the resin or deterioration of the phosphor, and therefore it is more preferable to use a mold. Punching processing.

當實施沖孔加工時,於將螢光體片材貼附在LED元件上後無法進行沖孔加工,因此必須於貼附前對螢光體片材實施沖孔加工。利用模具的沖孔加工可根據所貼合的LED元件的電極形狀等而開設任意的形狀或大小的孔。只要設計模具,則孔的大小或形狀可形成任意的大小或形狀,但為了不減小發光面的面積,1 mm見方左右的LED元件上的電極接合部分理想的是500 μm以下,孔對照其大小而以500 μm以下來形成。另外,進行打線接合等的電極需要某種程度的大小,因至少變成50 μm左右的大小,故孔對照其大小而為50 μm左右。若孔的大小遠大於電極,則發光面露出而產生漏光,LED發光裝置的顏色特性下降。另外,若遠小於電極,則於打線接合時接觸線而引起接合不良。因此,開孔加工必須以±10%以內的高精度對50 μm以上、500 μm以下的小孔進行加工。When the punching process is performed, since the phosphor sheet cannot be punched after being attached to the LED element, it is necessary to perform punching processing on the phosphor sheet before attaching. By punching a mold, a hole having an arbitrary shape or size can be formed depending on the shape of the electrode of the LED element to be bonded or the like. As long as the mold is designed, the size or shape of the hole can be formed into any size or shape. However, in order not to reduce the area of the light-emitting surface, the electrode joint portion on the LED element of about 1 mm square is desirably 500 μm or less. It is formed in a size of 500 μm or less. In addition, the electrode for wire bonding or the like needs to have a certain size, and since it is at least about 50 μm, the hole is about 50 μm in comparison with the size. If the size of the hole is much larger than the electrode, the light-emitting surface is exposed to cause light leakage, and the color characteristics of the LED light-emitting device are lowered. Further, if it is much smaller than the electrode, the wire is contacted at the time of wire bonding to cause a joint failure. Therefore, it is necessary to process the small holes of 50 μm or more and 500 μm or less with high precision within ±10%.

繼而,例示將螢光體片材貼合至LED元件的側面時的切斷方法。將製造例示於圖4中。Next, a cutting method when the phosphor sheet is bonded to the side surface of the LED element is exemplified. A manufacturing example is shown in FIG.

圖4中(a)是經由金凸塊(gold bump)8而使LED元件4與封裝基板5上的封裝電極9接合。In FIG. 4(a), the LED element 4 is bonded to the package electrode 9 on the package substrate 5 via gold bumps 8.

圖4中(b)是以基底基板2上的螢光體片材1接觸LED元件4的方式進行積層。(b) of FIG. 4 is a method in which the phosphor sheet 1 on the base substrate 2 is in contact with the LED element 4.

圖4中(c)是將該積層物放入至真空隔膜層壓機10的下部腔室13中後,一面進行加熱一面通過排氣/吸氣口11進行排氣,而對上部腔室12及下部腔室13進行減壓。進行減壓加熱至基底基板2流動為止後,通過排氣/吸氣口11使上部腔室12吸入大氣,藉此使隔膜14膨脹,通過基底基板2來按壓螢光體片材1,並以追從LED元件4的發光面的方式貼附。(c) of FIG. 4, after the laminate is placed in the lower chamber 13 of the vacuum diaphragm laminator 10, it is exhausted through the exhaust/suction port 11 while being heated, and the upper chamber 12 is exhausted. The lower chamber 13 is depressurized. After the pressure reduction heating is performed until the base substrate 2 flows, the upper chamber 12 is taken into the atmosphere through the exhaust/suction port 11, whereby the diaphragm 14 is inflated, and the phosphor sheet 1 is pressed by the base substrate 2, and It is attached so as to follow the light emitting surface of the LED element 4.

圖4中(d)是使上下腔室恢復成大氣壓後,自真空隔膜層壓機10中取出積層物,放置冷卻後剝離基底基板2。繼而,於切斷部分的位置切斷所獲得的包覆體。In (d) of FIG. 4, after the upper and lower chambers are returned to the atmospheric pressure, the laminate is taken out from the vacuum diaphragm laminator 10, and after cooling, the base substrate 2 is peeled off. Then, the obtained coating body is cut at the position of the cut portion.

圖4中(e)是獲得經單片化的帶有螢光體片材的LED元件。 實施例(e) in Fig. 4 is to obtain a monolithic LED element with a phosphor sheet. Example

以下,藉由實施例來具體地說明本發明。但是,本發明並不限定於該些實施例。Hereinafter, the present invention will be specifically described by way of examples. However, the invention is not limited to the embodiments.

<原料> A成分 <合成例1>含有烯基的矽酮樹脂(A1-1)的合成 於1 L的三口燒瓶中設置攪拌裝置及李比希(Liebig)冷卻器,並加入甲基三甲氧基矽烷(KBM-13,信越化學工業(股份)製造)136 g、二甲基二甲氧基矽烷(KBM-22,信越化學工業(股份)製造)24 g、三甲基乙氧基矽烷(T1394,東京化成工業(股份)製造)13.6 g、二甲基乙烯基氯矽烷(東京化成工業(股份)製造)10 g、異丁醇120 g,於20℃下進行攪拌。繼而,歷時30分鐘滴加0.05 N的鹽酸溶液60 g。滴加結束後,一面加熱至80℃一面攪拌1小時。繼而,一面加熱至105℃一面攪拌1小時。繼而,將反應溶液放置冷卻至25℃為止,並加入二甲苯150 g來進行稀釋。其後,將反應溶液加入至分液漏斗中,利用純水300 g重複5次清洗操作。其後,將精製溶液加熱至110℃,並去除水,而獲得無色透明樹脂100 g。對所獲得的樹脂進行結構分析的結果,平均單元式為<Materials> A component <Synthesis Example 1> Synthesis of an alkenyl group-containing fluorenone resin (A1-1) A stirring apparatus and a Liebig cooler were placed in a 1 L three-necked flask, and methyltrimethoxydecane was added thereto. (KBM-13, manufactured by Shin-Etsu Chemical Co., Ltd.) 136 g, dimethyldimethoxydecane (KBM-22, manufactured by Shin-Etsu Chemical Co., Ltd.) 24 g, trimethylethoxy decane (T1394, 13.6 g of dimethyl vinyl chlorodecane (manufactured by Tokyo Chemical Industry Co., Ltd.) and 120 g of isobutyl alcohol were stirred at 20 ° C. Then, 60 g of a 0.05 N hydrochloric acid solution was added dropwise over 30 minutes. After the completion of the dropwise addition, the mixture was stirred while heating to 80 ° C for 1 hour. Then, the mixture was stirred for 1 hour while being heated to 105 °C. Then, the reaction solution was left to cool to 25 ° C, and 150 g of xylene was added for dilution. Thereafter, the reaction solution was added to a separatory funnel, and the washing operation was repeated 5 times with 300 g of pure water. Thereafter, the refining solution was heated to 110 ° C, and water was removed to obtain 100 g of a colorless transparent resin. As a result of structural analysis of the obtained resin, the average unit is

[化4] [Chemical 4]

。該無色透明樹脂的重量平均分子量為5,000,折射率為1.43,玻璃轉移點為-30℃。鍵結於矽原子上的有機基中的甲基為94%。. The colorless transparent resin had a weight average molecular weight of 5,000, a refractive index of 1.43, and a glass transition point of -30 °C. The methyl group in the organic group bonded to the ruthenium atom was 94%.

<合成例2>含有烯基的矽酮樹脂(A1-2)的合成 除將加熱攪拌至105℃的時間設為5小時以外,以與合成例1相同的方法進行合成,而獲得無色透明樹脂100 g。<Synthesis Example 2> Synthesis of an alkenyl group-containing fluorenone resin (A1-2) The synthesis was carried out in the same manner as in Synthesis Example 1 except that the time of heating and stirring to 105 ° C was 5 hours, to obtain a colorless transparent resin. 100 g.

對所獲得的樹脂進行結構分析的結果,平均單元式為As a result of structural analysis of the obtained resin, the average unit is

[化5] [Chemical 5]

。該無色透明樹脂的重量平均分子量為16,000,折射率為1.43,玻璃轉移點為-70℃。鍵結於矽原子上的有機基中的甲基為91%。. The colorless transparent resin had a weight average molecular weight of 16,000, a refractive index of 1.43, and a glass transition point of -70 °C. The methyl group in the organic group bonded to the ruthenium atom was 91%.

<合成例3>含有烯基的矽酮樹脂(A1-3)的合成 除將加熱攪拌至105℃的時間設為15小時以外,以與合成例1相同的方法進行合成,而獲得無色透明樹脂100 g。對所獲得的樹脂進行結構分析的結果,平均單元式為<Synthesis Example 3> Synthesis of an alkenyl group-containing fluorenone resin (A1-3) In the same manner as in Synthesis Example 1, except that the heating and stirring to 105 ° C was carried out for 15 hours, a colorless transparent resin was obtained. 100 g. As a result of structural analysis of the obtained resin, the average unit is

[化6] [Chemical 6]

。該無色透明樹脂的重量平均分子量為350,000,折射率為1.43,玻璃轉移點為-90℃。鍵結於矽原子上的有機基中的甲基為96%。. The colorless transparent resin had a weight average molecular weight of 350,000, a refractive index of 1.43, and a glass transition point of -90 °C. The methyl group in the organic group bonded to the ruthenium atom is 96%.

<合成例4>含有氫矽烷基的矽酮樹脂(A2-1)的合成 除將原料自二甲基乙烯基矽烷(東京化成工業(股份)製造)變更成二甲基氯矽烷(東京化成工業(股份)製造)15 g以外,以與含有烯基的聚有機矽氧烷化合物合成例1相同的方法進行合成,而獲得無色透明樹脂100 g。對所獲得的樹脂進行結構分析的結果,平均單元式為<Synthesis Example 4> Synthesis of an oxime ketone resin (A2-1) containing a hydroquinone group, except that the raw material was changed from dimethyl vinyl decane (manufactured by Tokyo Chemical Industry Co., Ltd.) to dimethyl chlorodecane (Tokyo Chemical Industry Co., Ltd.) (manufactured by the company)) The synthesis was carried out in the same manner as in the synthesis example 1 of the polyorganosiloxane compound containing an alkenyl group, and 100 g of a colorless transparent resin was obtained. As a result of structural analysis of the obtained resin, the average unit is

[化7] [Chemistry 7]

。該無色透明樹脂的重量平均分子量為4,500,折射率為1.43,玻璃轉移點為-90℃。鍵結於矽原子上的有機基中的甲基為91%。. The colorless transparent resin had a weight average molecular weight of 4,500, a refractive index of 1.43, and a glass transition point of -90 °C. The methyl group in the organic group bonded to the ruthenium atom was 91%.

(B)成分 硬化觸媒B-1:鉑(1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷)錯合物 1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷溶液 鉑含量5 wt%。(B) component hardening catalyst B-1: platinum (1,3-divinyl-1,1,3,3-tetramethyldioxane) complex 1,3-divinyl-1, The platinum content of the 1,3,3-tetramethyldioxane solution was 5 wt%.

(C)成分 矽酮樹脂C-1:SR-1000(日本邁圖高新材料(合)製造),玻璃轉移點為80℃,重量平均分子量為3,800,鍵結於矽原子上的有機基中的甲基為92%。平均單元式為(C) component fluorenone resin C-1: SR-1000 (made by Japan Momentive Advanced Materials Co., Ltd.), having a glass transition point of 80 ° C and a weight average molecular weight of 3,800, bonded to an organic group on a ruthenium atom The methyl group is 92%. The average unit is

[化8] [化8]

.

矽酮樹脂C-2:X-40-3237(信越化學工業(股份)製造),玻璃轉移點為130℃,重量平均分子量為6,000,鍵結於矽原子上的有機基中的甲基為93%。平均單元式為Anthrone resin C-2: X-40-3237 (manufactured by Shin-Etsu Chemical Co., Ltd.), the glass transition point is 130 ° C, the weight average molecular weight is 6,000, and the methyl group bonded to the organic group on the ruthenium atom is 93. %. The average unit is

[化9] [Chemistry 9]

.

矽酮樹脂C-3:CB-1002(東麗・道康寧(股份)製造),玻璃轉移點為160℃,重量平均分子量為70,000,鍵結於矽原子上的有機基中的甲基為97%。平均單元式為Anthrone resin C-3: CB-1002 (manufactured by Toray Dow Corning Co., Ltd.), the glass transition point is 160 ° C, the weight average molecular weight is 70,000, and the methyl group bonded to the organic group on the ruthenium atom is 97%. . The average unit is

[化10] [化10]

.

矽酮樹脂C-4:MQ-1640(東麗・道康寧(股份)製造),玻璃轉移點為250℃,重量平均分子量為150,000,鍵結於矽原子上的有機基中的甲基為91%。平均單元式為Anthrone resin C-4: MQ-1640 (manufactured by Toray Dow Corning Co., Ltd.), having a glass transition point of 250 ° C, a weight average molecular weight of 150,000, and a methyl group bonded to an organic group on a halogen atom is 91%. . The average unit is

[化11] [11]

.

矽酮樹脂C-5:KR-515(信越化學工業(股份)製造),玻璃轉移點為-100℃,重量平均分子量為900,鍵結於矽原子上的有機基中的甲基為90%。平均單元式為Anthrone resin C-5: KR-515 (manufactured by Shin-Etsu Chemical Co., Ltd.), the glass transition point is -100 ° C, the weight average molecular weight is 900, and the methyl group bonded to the organic group on the ruthenium atom is 90%. . The average unit is

[化12] [化12]

.

螢光體 螢光體D-1:「NYAG-02」(英特美(Intematix)(股份)製造)比重:4.8 g/cm3 ,D50:8 μm。Phosphor phosphor D-1: "NYAG-02" (manufactured by Intematix Co., Ltd.) Specific gravity: 4.8 g/cm 3 , D50: 8 μm.

螢光體D-2:「BY-202/A」(三菱化學(股份)製造)比重:4.8 g/cm3 ,D50:12 μm。Phosphor D-2: "BY-202/A" (manufactured by Mitsubishi Chemical Corporation): 4.8 g/cm 3 , D50: 12 μm.

螢光體D-3:「EY4254」(英特美(股份)製造)比重:4.7 g/cm3 ,D50:16 μm。Phosphor D-3: "EY4254" (manufactured by Intermec (share)) Specific gravity: 4.7 g/cm 3 , D50: 16 μm.

無機粒子 <無機粒子1>氧化鋁粉末「艾羅賽德(Aeroxide)」(日本艾羅西爾(Aerosil)(股份)製造)平均粒徑D50:13nm 矽酮微粒子 <合成例5>微粒子1 於3 L四口圓底燒瓶中安裝攪拌機、溫度計、回流管、滴加漏斗,並向燒瓶中添加pH為12(25℃)的2.5 wt%氨水溶液1600 g、及非離子系界面活性劑艾瑪爾根(Emulgen)1108(花王(股份)製造)0.004 g。以300 rpm進行攪拌,並歷時20分鐘自滴加漏斗滴加甲基三甲氧基矽烷150 g。其後,歷時30分鐘將聚合溶液昇溫至50℃為止,進而繼續攪拌60分鐘。繼而,將聚合溶液冷卻至室溫為止後,添加乙酸銨10 g,並以150 rpm攪拌10分鐘。繼而,將聚合溶液細分至8個250 ml離心瓶(樂基因(Nalgene)(股份)製造)中,利用離心分離器(台式離心機4000,久保田製作所(股份)製造),以3000 rpm、10分鐘的條件進行離心分離後,去除上清液。繼而,向該離心瓶中添加純水200 g,利用鏟進行攪拌後,於所述條件下再次進行離心分離。將清洗操作重複5次。繼而,將離心瓶中所殘留的濾餅移至桶中,利用熱風烘箱以100℃乾燥8小時,而獲得白色粉末70 g。所獲得的粉末的平均粒徑(D50)為0.5 μm,平均單元式為Inorganic particles <Inorganic particles 1> Alumina powder "Aeroxide" (manufactured by Aerosil, Japan) Average particle diameter D50: 13 nm Anthrone fine particles <Synthesis Example 5> Fine particles 1 A 3 L four-neck round bottom flask was equipped with a stirrer, a thermometer, a reflux tube, a dropping funnel, and a 1600 g of a 2.5 wt% aqueous ammonia solution having a pH of 12 (25 ° C) and a nonionic surfactant Emma were added to the flask. Emulgen 1108 (made by Kao (Stock)) 0.004 g. Stirring was carried out at 300 rpm, and 150 g of methyltrimethoxydecane was added dropwise from the dropping funnel over 20 minutes. Thereafter, the polymerization solution was heated to 50 ° C over 30 minutes, and stirring was continued for further 60 minutes. Then, after cooling the polymerization solution to room temperature, 10 g of ammonium acetate was added, and the mixture was stirred at 150 rpm for 10 minutes. Then, the polymerization solution was subdivided into eight 250 ml centrifuge bottles (manufactured by Nalgene Co., Ltd.) using a centrifugal separator (desktop centrifuge 4000, manufactured by Kubota Manufacturing Co., Ltd.) at 3000 rpm for 10 minutes. After the conditions of centrifugation, the supernatant was removed. Then, 200 g of pure water was added to the centrifuge bottle, and the mixture was stirred by a spatula, and then centrifuged again under the above conditions. Repeat the cleaning operation 5 times. Then, the cake remaining in the centrifuge bottle was transferred to a tub and dried at 100 ° C for 8 hours using a hot air oven to obtain 70 g of a white powder. The obtained powder has an average particle diameter (D50) of 0.5 μm and an average unit formula of

[化13] [Chemistry 13]

.

<基底基板> 基材1:帶有脫模劑的PET膜「賽拉皮(Cerapeel)」BLK(東麗薄膜加工(股份)製造) 剝離力5.7 N/50 mm <儲存彈性係數測定> 測定裝置:黏彈性測定裝置ARES-G2(日本TA儀器(TA Instruments Japan)(股份)製造) 幾何形狀:平行圓板型(15 mm) 應變:1% 角頻率:1 Hz 溫度範圍:25℃~200℃ 昇溫速度:5℃/min 測定環境:大氣中。<Base substrate> Substrate 1: PET film with release agent "Cerapeel" BLK (manufactured by Toray Film Processing Co., Ltd.) Peeling force 5.7 N/50 mm <Measurement of storage elastic modulus> Measuring device : Viscoelasticity measuring device ARES-G2 (manufactured by TA Instruments Japan, Ltd.) Geometry: Parallel disk type (15 mm) Strain: 1% Angular frequency: 1 Hz Temperature range: 25 °C to 200 °C Heating rate: 5 ° C / min Measurement environment: in the atmosphere.

<儲存黏彈性測定的測定樣品調整> 使用聚乙烯製容器,以(A)成分70重量份、(B)成分0.005重量份、(C)成分30重量份、螢光體100重量份的比率進行混合。其後,使用行星式攪拌・脫泡裝置「瑪澤斯塔(Mazerustar)KK-400」(倉敷紡織(Kurabo)(股份)製造),以1000 rpm進行20分鐘攪拌・脫泡而獲得含有螢光體的樹脂組成物。使用縫模塗佈機將含有螢光體的樹脂組成物塗佈於基材1上,於100℃下進行1小時加熱、乾燥而獲得半硬化的螢光體片材。將8片所獲得的片材積層,於100℃的加熱板上進行加熱壓接來製作600 μm以上的一體化的膜(片材),並剪切成直徑15 mm來作為測定樣品。於所述條件下對藉由所述操作所製作的各測定樣品進行測定,並將25℃、100℃、200℃下的儲存彈性係數示於表1中。<Measurement of Measurement Sample for Storage Viscoelasticity Measurement> Using a polyethylene container, the ratio of 70 parts by weight of the component (A), 0.005 parts by weight of the component (B), 30 parts by weight of the component (C), and 100 parts by weight of the phosphor were used. mixing. Then, using a planetary stirring/deaerator "Mazerustar KK-400" (manufactured by Kurabo Co., Ltd.), the mixture was stirred and defoamed at 1000 rpm for 20 minutes to obtain fluorescence. The resin composition of the body. The resin composition containing a phosphor was applied onto the substrate 1 using a slit die coater, and heated and dried at 100 ° C for 1 hour to obtain a semi-cured phosphor sheet. Eight sheets of the obtained sheets were laminated and heated and pressure-bonded on a hot plate at 100 ° C to prepare an integrated film (sheet) of 600 μm or more, and cut into a diameter of 15 mm to prepare a measurement sample. The measurement samples prepared by the above operation were measured under the conditions described above, and the storage elastic coefficients at 25 ° C, 100 ° C, and 200 ° C are shown in Table 1.

<接著性評價> 於100℃下,將切割成1 mm見方的螢光體片材貼合於LED元件上並壓接規定的時間後,恢復成室溫,當剝離基底基板時,將螢光體片材全部接著於LED元件上而不殘留於基底基板上的最小的時間設為可接著時間。將於100℃、加熱壓接時間為3分鐘以內含有螢光體的片狀成形物全部接著於LED元件上而不殘留於基底基板上者設為接著性A,將於100℃、3分鐘以內不接著,但於5分鐘以內接著者設為接著性B,將於5分鐘內不接著,但於10分鐘內接著者設為接著性C,將於150℃、15分鐘以內接著者設為接著性D,將如即便於150℃下加熱壓接15分鐘以上,亦不接著於LED元件上或即便部分地接著,一部分亦殘留於基底基板上的情況設為接著性E(接著不良)。<Adhesion evaluation> The phosphor sheet cut into 1 mm square was bonded to the LED element at 100 ° C and pressed for a predetermined period of time, and then returned to room temperature. When the base substrate was peeled off, the fluorescent material was irradiated. The minimum time during which the body sheets are all on the LED elements without remaining on the base substrate is set as the last time. The sheet-like molded article containing the phosphor at 100 ° C and the heat-pressing time of 3 minutes is all adhered to the LED element and does not remain on the base substrate. The adhesive property A is set to 100 ° C for 3 minutes. If it is not followed, but the follower is set to the adhesiveness B within 5 minutes, it will not be followed within 5 minutes, but within 10 minutes, the follower is set to the adhesive C, and the recipient will be set to follow at 150 ° C for 15 minutes. The property D is, if it is heated and pressure-bonded at 150 ° C for 15 minutes or more, and is not adhered to the LED element or even partially, and a part remains on the base substrate, and the adhesion E (adequate defect) is used.

<色溫不均> 於將螢光體片材安裝於LED元件上而成的LED發光裝置中流入20 mA的電流來使LED元件點燈,並使用瞬間多重測光系統(MCPD-3000,大塚電子(股份)製造)測定相關色溫。製作10個樣品,將所測量的相關色溫(Correlated Color Temperature,CCT)的最大值與最小值的差設為色溫不均。<Color temperature unevenness> A current of 20 mA flows into an LED light-emitting device in which a phosphor sheet is mounted on an LED element to light an LED element, and an instantaneous multi-time measuring system (MCPD-3000, Otsuka Electronics) is used. Share) manufacturing) Determination of the relevant color temperature. Ten samples were prepared, and the difference between the maximum value and the minimum value of the measured correlated color temperature (CCT) was set as the color temperature unevenness.

<耐熱性評價> 於將螢光體片材安裝於LED元件上而成的LED發光裝置中流入20 mA的電流來使LED元件點燈,並使用瞬間多重測光系統(MCPD-3000,大塚電子(股份)製造)測定色度。繼而,於使該發光裝置點燈的狀態下放入至熱風烘箱中,以150℃進行100小時加熱處理後,利用測光系統再次測定色度,並算出加熱處理前後的色度變動範圍。<Evaluation of heat resistance> In an LED light-emitting device in which a phosphor sheet is mounted on an LED element, a current of 20 mA is supplied to light the LED element, and an instantaneous multi-time measuring system (MCPD-3000, Otsuka Electronics) is used. Share) Manufacturing) Determination of color. Then, the light-emitting device was placed in a hot air oven, and the heat treatment was performed at 150 ° C for 100 hours. Then, the chromaticity was measured again by the photometric system, and the chromaticity variation range before and after the heat treatment was calculated.

<LED光束維持率評價> 於將螢光體片材安裝於LED元件上而成的LED發光裝置中流入20 mA的電流來使LED元件點燈,並使用瞬間多重測光系統(MCPD-3000,大塚電子(股份)製造)測定全光束,並將其設為初始值A。繼而,將該發光裝置放入至設定成100℃的熱風烘箱中,於已點燈的狀態下放置1000小時,其後,自熱風烘箱中取出,放置冷卻至25℃為止,利用測光系統測定全光束,並將其設為測定值B。繼而,將各個測定值代入至以下的式中,而算出光束維持率。<Evaluation of LED beam maintenance rate> A current of 20 mA was flowed into an LED light-emitting device in which a phosphor sheet was mounted on an LED element to light an LED element, and an instantaneous multi-time metering system (MCPD-3000, Otsuka) was used. The electronic (manufacturing) production measures the full beam and sets it to the initial value A. Then, the light-emitting device was placed in a hot air oven set at 100 ° C, and placed in a lighted state for 1000 hours, and then taken out from the hot air oven, left to cool to 25 ° C, and measured by a photometric system. The beam is set to the measured value B. Then, each measurement value was substituted into the following formula, and the beam maintenance rate was calculated.

光束維持率={(測定值B)/(初始值A)}×100。Beam maintenance rate = {(measured value B) / (initial value A)} × 100.

(實施例1) 使用聚乙烯製容器,以56重量份的矽酮樹脂A1-1、14重量份的矽酮樹脂A2-1、30重量份的矽酮樹脂C-1、0.005重量份的硬化觸媒B-1、100重量份的螢光體D-1的比率進行混合。其後,使用行星式攪拌・脫泡裝置「瑪澤斯塔(Mazerustar)KK-400」(倉敷紡織(股份)製造),以1000 rpm進行20分鐘攪拌・脫泡而獲得含有螢光體的樹脂組成物。使用縫模塗佈機將含有螢光體的樹脂組成物塗佈於基材1上,於100℃下進行1小時加熱、乾燥而獲得半硬化的螢光體片材。對所獲得的片材的膜厚進行測定,結果為80 μm,膜厚差為1.5%。繼而,該片材的各溫度下的儲存彈性係數為0.15 MPa(25℃)、0.03 MPa(100℃)、0.25 MPa(200℃)。繼而,對該片材的接著性進行評價,結果為接著性A。繼而,使用該片材所製作的LED發光裝置是10個中10個點燈,色溫不均為104 K,耐熱性(變動範圍)為ΔClx 0、ΔCly 0,光束維持率為100%。(Example 1) Using a polyethylene container, 56 parts by weight of an fluorenone resin A1-1, 14 parts by weight of an fluorenone resin A2-1, 30 parts by weight of an fluorenone resin C-1, and 0.005 parts by weight of hardening The ratio of the catalyst B-1 to 100 parts by weight of the phosphor D-1 was mixed. Then, using a planetary stirring/deaerator "Mazerustar KK-400" (manufactured by Kurashiki Textile Co., Ltd.), stirring and defoaming at 1000 rpm for 20 minutes to obtain a resin containing a phosphor Composition. The resin composition containing a phosphor was applied onto the substrate 1 using a slit die coater, and heated and dried at 100 ° C for 1 hour to obtain a semi-cured phosphor sheet. The film thickness of the obtained sheet was measured and found to be 80 μm, and the film thickness difference was 1.5%. Then, the storage elastic modulus at each temperature of the sheet was 0.15 MPa (25 ° C), 0.03 MPa (100 ° C), and 0.25 MPa (200 ° C). Then, the adhesion of the sheet was evaluated, and as a result, the adhesiveness A was obtained. Then, the LED light-emitting device produced using the sheet was 10 of 10 lightings, and the color temperature was not 104 K, and the heat resistance (variation range) was ΔClx 0 and ΔCly 0, and the beam maintenance ratio was 100%.

(實施例2~實施例9)矽酮樹脂(C)成分的添加量 除不變更(B)成分的比率,並變更(A)成分與(C)成分的比率以外,以與實施例1相同的操作製作螢光體片材,並進行片材膜厚、儲存彈性係數、接著性、色溫不均、耐熱性及光束維持率的評價。將結果示於表1中。實施例2~實施例3為接著性B,實施例4~實施例5為接著性C,實施例6~實施例8為接著性D,但色溫不均、耐熱性及光束維持率良好。(Examples 2 to 9) The amount of the fluorenone resin (C) component to be added is the same as in the first embodiment except that the ratio of the component (B) is not changed and the ratio of the component (A) to the component (C) is changed. The operation of the phosphor sheet was carried out, and the film thickness, storage elastic modulus, adhesion, color temperature unevenness, heat resistance, and beam maintenance ratio were evaluated. The results are shown in Table 1. Examples 2 to 3 are adhesive B, Examples 4 to 5 are adhesive C, and Examples 6 to 8 are adhesive D, but color temperature unevenness, heat resistance, and light beam maintenance ratio are good.

(實施例10~實施例11)(A)成分的種類 除變更(A)成分的種類以外,以與實施例1相同的操作製作螢光體片材,並進行片材膜厚、儲存彈性係數、接著性、色溫不均、耐熱性及光束維持率的評價。將結果示於表2中。可知與實施例1相比,實施例9及實施例10的色溫不均得到抑制,螢光體的分散穩定性提昇。另一方面,耐熱性的色度變動範圍雖然大於實施例1,但相對良好。(Examples 10 to 11) Types of component (A) A phosphor sheet was produced in the same manner as in Example 1 except that the type of the component (A) was changed, and the film thickness and storage elastic modulus were measured. Evaluation of adhesion, color temperature unevenness, heat resistance, and beam maintenance rate. The results are shown in Table 2. It was found that the color temperature unevenness of Example 9 and Example 10 was suppressed as compared with Example 1, and the dispersion stability of the phosphor was improved. On the other hand, although the chromaticity variation range of heat resistance is larger than that of Example 1, it is relatively good.

(實施例12~實施例15)(C)成分的種類 除變更所添加的矽酮樹脂(C)成分的種類以外,以與實施例1相同的操作製作螢光體片材,並進行片材膜厚、儲存彈性係數、接著性、色溫不均、耐熱性及光束維持率的評價。將結果示於表2中。實施例12~實施例15的接著性下降。(Examples 12 to 15) The type of the component (C) was prepared by the same operation as in Example 1 except that the type of the component (C) component to be added was changed, and the sheet was produced. Evaluation of film thickness, storage elastic modulus, adhesion, color temperature unevenness, heat resistance, and beam maintenance ratio. The results are shown in Table 2. The adhesion of Examples 12 to 15 decreased.

(實施例16~實施例17)螢光體的種類 除變更所添加的螢光體的種類以外,以與實施例1相同的操作製作螢光體片材,並進行片材膜厚、儲存彈性係數、接著性、色溫不均、耐熱性及光束維持率的評價。將結果示於表3中。實施例16~實施例17雖然色溫不均變大,但為相對良好的結果。(Examples 16 to 17) Types of phosphors A phosphor sheet was produced in the same manner as in Example 1 except that the type of the phosphor to be added was changed, and the sheet thickness and storage elasticity were performed. Evaluation of coefficient, adhesion, color temperature unevenness, heat resistance, and beam maintenance ratio. The results are shown in Table 3. In Examples 16 to 17, although the color temperature unevenness was large, it was a relatively good result.

(實施例18~實施例20)無機粒子或矽酮微粒子的添加效果 實施例18新添加5 wt%的無機粒子1,實施例19新添加20 wt%的無機粒子1,實施例20新添加20 wt%的微粒子1,除此以外,以與實施例1相同的操作製作螢光體片材,並進行片材膜厚、儲存彈性係數、接著性、色溫不均、耐熱性及光束維持率的評價。將結果示於表3中。於實施例18~實施例20中,色溫不均比實施例1~實施例17有改善。(Examples 18 to 20) Addition effect of inorganic particles or fluorenone fine particles Example 18 was newly added with 5 wt% of inorganic particles 1, Example 19 was newly added with 20 wt% of inorganic particles 1, and Example 20 was newly added 20 A phosphor sheet was produced in the same manner as in Example 1 except for the fine particles 1 of wt%, and the sheet thickness, storage elastic modulus, adhesion, color temperature unevenness, heat resistance, and beam maintenance ratio were measured. Evaluation. The results are shown in Table 3. In Examples 18 to 20, the color temperature unevenness was improved as compared with Examples 1 to 17.

(比較例1) 除未添加矽酮樹脂(C)成分以外,以與實施例1相同的操作製作螢光體片材,並進行片材膜厚、儲存彈性係數、接著性、色溫不均、耐熱性及光束維持率的評價。將結果示於表4中。所獲得的片材的膜厚差為6%,未顯現接著性,評價為接著性E。另外,因片材未接著,故無法進行色溫不均、耐熱性、光束維持率的評價。(Comparative Example 1) A phosphor sheet was produced in the same manner as in Example 1 except that the fluorenone resin (C) component was not added, and the sheet thickness, storage elastic modulus, adhesion, and color temperature unevenness were observed. Evaluation of heat resistance and beam maintenance rate. The results are shown in Table 4. The obtained sheet had a film thickness difference of 6%, and no adhesion was observed, and it was evaluated as the adhesiveness E. Further, since the sheet was not attached, evaluation of color temperature unevenness, heat resistance, and beam maintenance ratio could not be performed.

[表1] [表1] [Table 1] [Table 1]

[表2] [表2] [Table 2] [Table 2]

[表3] [表3] [Table 3] [Table 3]

[表4] [表4] [Table 4] [Table 4]

1‧‧‧螢光體片材
2‧‧‧支撐基材
3‧‧‧臨時固定片材
4‧‧‧LED元件
5‧‧‧安裝基板
6‧‧‧加熱壓接工具
7‧‧‧表面形成有LED元件的晶圓
8‧‧‧金凸塊
9‧‧‧封裝電極
10‧‧‧真空隔膜層壓機
11‧‧‧排氣/吸氣口
12‧‧‧上部腔室
13‧‧‧下部腔室
14‧‧‧隔膜
1‧‧‧Fuel sheet
2‧‧‧Support substrate
3‧‧‧ Temporary fixed sheets
4‧‧‧LED components
5‧‧‧Installation substrate
6‧‧‧heating crimping tool
7‧‧‧ wafers with LED components on the surface
8‧‧‧ Gold bumps
9‧‧‧Package electrode
10‧‧‧Vacuum diaphragm laminating machine
11‧‧‧Exhaust/suction port
12‧‧‧ upper chamber
13‧‧‧Lower chamber
14‧‧‧Separator

圖1是利用本發明的片狀成形物的LED發光裝置製造步驟的第1例 圖2是利用本發明的片狀成形物的LED發光裝置製造步驟的第2例 圖3是利用本發明的片狀成形物的LED發光裝置製造步驟的第3例 圖4是利用本發明的片狀成形物的LED發光裝置製造步驟的第4例1 is a first example of a manufacturing procedure of an LED light-emitting device using a sheet-like molded article of the present invention. FIG. 2 is a second example of a manufacturing process of an LED light-emitting device using the sheet-shaped molded article of the present invention. FIG. 3 is a sheet using the present invention. Third Example of Manufacturing Step of LED Light Emitting Device of Shaped Product FIG. 4 is a fourth example of manufacturing procedure of LED light emitting device using the sheet shaped product of the present invention.

1‧‧‧螢光體片材 1‧‧‧Fuel sheet

2‧‧‧支撐基材 2‧‧‧Support substrate

3‧‧‧臨時固定片材 3‧‧‧ Temporary fixed sheets

4‧‧‧LED元件 4‧‧‧LED components

5‧‧‧安裝基板 5‧‧‧Installation substrate

6‧‧‧加熱壓接工具 6‧‧‧heating crimping tool

Claims (17)

一種樹脂組成物,其特徵在於:至少包括下述(A)與(B)的成分,進而包括(C)成分, (A)成分:鍵結於矽原子上的有機基中的90%以上為甲基的反應性矽酮樹脂; (B)成分:硬化觸媒; (C)成分:鍵結於矽原子上的有機基中的90%以上為甲基的非反應性矽酮樹脂。A resin composition comprising at least the following components (A) and (B), further comprising (C) component, and (A) component: 90% or more of the organic groups bonded to the ruthenium atom a methyl reactive fluorenone resin; (B) component: a curing catalyst; (C) component: a non-reactive fluorenone resin in which 90% or more of the organic groups bonded to the fluorene atom is a methyl group. 如申請專利範圍第1項所述的樹脂組成物,其中(C)成分包含由平均單元式(2)所表示的矽酮樹脂,R4 ~R6 為經取代或未經取代的烷基或烷氧基,分別可相同,亦可不同;k、p及s為表示各括號內的構成單元的比例的數字,且為滿足0.01≦k≦0.50、k+p+s=1.0的正數;m、n、q及r為滿足m+n=2、q+r=1的0以上的整數;當將鍵結於矽原子上的經取代或未經取代的烷基中的甲基的總數設為M時,滿足M/{3k+2p+s}≧0.90。The resin composition according to claim 1, wherein the component (C) comprises an anthrone resin represented by the average unit formula (2), R 4 to R 6 are a substituted or unsubstituted alkyl or alkoxy group, which may be the same or different, and k, p and s are numbers indicating the proportion of constituent units in each parenthesis, and satisfy 0.01. ≦k≦0.50, a positive number of k+p+s=1.0; m, n, q, and r are integers of 0 or more satisfying m+n=2, q+r=1; when substituted or unsubstituted alkyl bonded to a ruthenium atom When the total number of methyl groups in the group is M, M/{3k+2p+s}≧0.90 is satisfied. 如申請專利範圍第1項或第2項所述的樹脂組成物,其中所述樹脂組成物中的(A)成分的玻璃轉移點為-100℃~20℃的範圍,(C)成分的玻璃轉移點為50℃~200℃的範圍。The resin composition according to claim 1 or 2, wherein the glass transition point of the component (A) in the resin composition is in the range of -100 ° C to 20 ° C, and the glass of the component (C) The transfer point is in the range of 50 ° C to 200 ° C. 如申請專利範圍第1項至第3項中任一項所述的樹脂組成物,其更包括螢光體。The resin composition according to any one of claims 1 to 3, further comprising a phosphor. 如申請專利範圍第1項至第4項中任一項所述的樹脂組成物,其中當將(A)成分與(C)成分的合計量設為100 wt%時,所述樹脂組成物中的(C)成分的含量為0.50 wt%~70 wt%。The resin composition according to any one of claims 1 to 4, wherein when the total amount of the component (A) and the component (C) is 100% by weight, the resin composition The content of the component (C) is from 0.50 wt% to 70 wt%. 如申請專利範圍第1項至第5項中任一項所述的樹脂組成物,其中以聚苯乙烯換算計,所述樹脂組成物中的(C)成分的重量平均分子量為1,000~100,000。The resin composition according to any one of the items 1 to 5, wherein the component (C) in the resin composition has a weight average molecular weight of 1,000 to 100,000. 如申請專利範圍第1項至第6項中任一項所述的樹脂組成物,其更包括無機粒子及/或矽酮微粒子。The resin composition according to any one of claims 1 to 6, which further comprises inorganic particles and/or fluorenone microparticles. 如申請專利範圍第7項所述的樹脂組成物,其中所述樹脂組成物含有無機粒子,所述無機粒子為選自由二氧化矽、氧化鋁、二氧化鈦、氧化鎂及氮化鋁所組成的群組中的一種以上的粒子。The resin composition according to claim 7, wherein the resin composition contains inorganic particles, and the inorganic particles are selected from the group consisting of cerium oxide, aluminum oxide, titanium oxide, magnesium oxide, and aluminum nitride. More than one particle in the group. 如申請專利範圍第7項所述的樹脂組成物,其中所述樹脂組成物含有矽酮微粒子,所述矽酮微粒子為由平均單元式(3)所表示的矽酮微粒子,R7 ~R9 為經取代或未經取代的烷基,分別可相同,亦可不同;t、u及w為表示各括號內的構成單元的比例的數字,且滿足0.50≦t≦0.95、0.05≦u+w≦0.50、t+u+w=1.0。The resin composition according to claim 7, wherein the resin composition contains fluorenone microparticles, and the fluorenone microparticles are fluorenone microparticles represented by an average unit formula (3). R 7 to R 9 are a substituted or unsubstituted alkyl group, which may be the same or different, and t, u and w are numbers indicating the proportion of constituent units in each parenthesis, and satisfy 0.50≦t≦0.95, 0.05≦u+w≦0.50, t+u+w=1.0. 如申請專利範圍第1項至第9項中任一項所述的樹脂組成物,其中所述螢光體的平均一次粒徑為5.0 μm~40 μm的範圍。The resin composition according to any one of claims 1 to 9, wherein the phosphor has an average primary particle diameter of 5.0 μm to 40 μm. 一種片狀成形物,其是如申請專利範圍第1項至第10項中任一項所述的樹脂組成物的片狀成形物。A sheet-like molded article of the resin composition according to any one of claims 1 to 10, which is a sheet-like molded article. 如申請專利範圍第11項所述的片狀成形物,其25℃下的儲存彈性係數為0.010 MPa以上,且加熱至100℃時的儲存彈性係數(G')低於25℃及200℃下的各自的儲存彈性係數。The sheet-like formed article according to claim 11, wherein the storage elastic modulus at 25 ° C is 0.010 MPa or more, and the storage elastic modulus (G') when heated to 100 ° C is lower than 25 ° C and 200 ° C. The respective storage elastic coefficients. 一種發光裝置,其是將如申請專利範圍第11項或第12項中任一項所述的片狀成形物貼附於LED元件上或LED元件上所形成的矽酮樹脂層上而形成。A light-emitting device formed by attaching a sheet-like formed article according to any one of claims 11 to 12 to an enamel resin layer formed on an LED element or an LED element. 如申請專利範圍第13項所述的發光裝置,其是將如申請專利範圍第11項或第12項中任一項所述的片狀成形物貼附至LED元件的側面而形成。The sheet-like molded article according to any one of claims 11 to 12, wherein the sheet-like molded article according to any one of claims 11 to 12 is attached to the side surface of the LED element. 一種發光裝置的製造方法,其特徵在於:至少包括對如申請專利範圍第11項或第12項中任一項所述的片狀成形物進行加熱後貼附於LED元件的發光面或發光面上所形成的矽酮樹脂層上的步驟。A method of producing a light-emitting device, comprising: heating a sheet-like formed article according to any one of claim 11 or 12, and attaching to a light-emitting surface or a light-emitting surface of the LED element The step of forming the fluorenone resin layer thereon. 如申請專利範圍第15項所述的製造方法,其包括:將如申請專利範圍第11項或第12項中任一項所述的片狀成形物切斷成單片的步驟、以及對切斷成所述單片的片狀成形物進行加熱後貼附於LED元件或LED元件上所形成的矽酮樹脂層上的步驟。The manufacturing method according to claim 15, which comprises the step of cutting the sheet-like formed product according to any one of claim 11 or 12 into a single piece, and cutting the same The step of breaking the sheet-like formed article of the single sheet and heating it and attaching it to the fluorenone resin layer formed on the LED element or the LED element. 如申請專利範圍第15項或第16項所述的製造方法,其中貼附如申請專利範圍第11項或第12項中任一項所述的片狀成形物的溫度為50℃以上、200℃以下。The manufacturing method according to claim 15 or claim 16, wherein the sheet-like molded article according to any one of claim 11 or 12, wherein the sheet-like molded article has a temperature of 50 ° C or more and 200 Below °C.
TW105139068A 2015-11-30 2016-11-28 Resin composition, sheet-shaped molded article of same, light-emitting device using same, and method for manufacturing same TW201728685A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015232767 2015-11-30

Publications (1)

Publication Number Publication Date
TW201728685A true TW201728685A (en) 2017-08-16

Family

ID=58797271

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105139068A TW201728685A (en) 2015-11-30 2016-11-28 Resin composition, sheet-shaped molded article of same, light-emitting device using same, and method for manufacturing same

Country Status (5)

Country Link
JP (1) JPWO2017094618A1 (en)
KR (1) KR102460162B1 (en)
CN (1) CN108291090B (en)
TW (1) TW201728685A (en)
WO (1) WO2017094618A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10193030B2 (en) * 2016-08-08 2019-01-29 General Electric Company Composite materials having red emitting phosphors
KR102215781B1 (en) * 2017-02-23 2021-02-16 도레이 카부시키가이샤 Phosphor sheet, LED chip and LED package using the same, manufacturing method of LED package, and light emitting device including LED package, backlight unit and display
TW201910403A (en) * 2017-07-28 2019-03-16 日商道康寧東麗股份有限公司 Resin sheet for optical member, optical member including the same, laminated body or light-emitting element, and method for producing resin sheet for optical member
CN115449184B (en) * 2022-08-31 2024-02-20 江苏中科科化新材料股份有限公司 Low-warpage thermosetting epoxy resin composite material and preparation method and application thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159450A (en) * 1984-12-29 1986-07-19 Toshiba Silicone Co Ltd Polyorganosiloxane composition
JP2002294076A (en) * 2001-04-02 2002-10-09 Dow Corning Toray Silicone Co Ltd Silicone gel composition for molding in metal mold
JP4071639B2 (en) * 2003-01-15 2008-04-02 信越化学工業株式会社 Silicone resin composition for light emitting diode element
JP2009084511A (en) 2007-10-02 2009-04-23 Sekisui Chem Co Ltd Optical semiconductor sealing sheet and optical semiconductor element
CN101230245A (en) * 2007-12-20 2008-07-30 宁波安迪光电科技有限公司 Gluewater for packaging light-emitting diode and uses thereof
JP4850931B2 (en) * 2009-06-18 2012-01-11 信越化学工業株式会社 Addition reaction curable silicone pressure-sensitive adhesive composition and pressure-sensitive adhesive tape
TWI502004B (en) * 2009-11-09 2015-10-01 Dow Corning Process for preparing clustered functional polyorganosiloxanes, and methods for their use
JP5131650B2 (en) 2010-12-22 2013-01-30 信越化学工業株式会社 Method for producing phosphor-containing silicone resin lens
JP5287935B2 (en) 2011-06-16 2013-09-11 東レ株式会社 Phosphor-containing sheet, LED light-emitting device using the same, and manufacturing method thereof
US20130200425A1 (en) 2012-02-03 2013-08-08 Shin-Etsu Chemical Co., Ltd Phosphor-containing adhesive silicone composition sheet, and method of producing light-emitting device using same
JP6157073B2 (en) 2012-08-10 2017-07-05 東レ・ダウコーニング株式会社 Curable silicone composition and cured product thereof
JP2014093403A (en) * 2012-11-02 2014-05-19 Shin Etsu Chem Co Ltd Thermosetting silicone resin sheet and process of manufacturing the same, and light-emitting device using the same and process of manufacturing the same
JP6070498B2 (en) * 2012-12-21 2017-02-01 信越化学工業株式会社 Thermosetting silicone resin sheet having phosphor-containing layer and white pigment-containing layer, method for producing light-emitting device using the same, and sealed light-emitting semiconductor device
JP6075261B2 (en) * 2013-10-02 2017-02-08 信越化学工業株式会社 Thermally conductive silicone composition and cured product thereof

Also Published As

Publication number Publication date
WO2017094618A1 (en) 2017-06-08
KR20180088799A (en) 2018-08-07
KR102460162B1 (en) 2022-10-31
JPWO2017094618A1 (en) 2018-09-13
CN108291090B (en) 2021-04-02
CN108291090A (en) 2018-07-17

Similar Documents

Publication Publication Date Title
TWI536614B (en) Sheet containing fluroescence, led light-emitting device using the sheet and manufacturing method thereof
EP2537899B1 (en) Phosphor-containing cured silicone, process for production of same, phosphor-containing silicone composition, precursor of the composition, sheet-shaped moldings, led package, light -emitting device, and process for production of led-mounted substrate
US9117979B2 (en) Phosphor sheet, LED and light emitting device using the same and method for manufacturing LED
JP6287212B2 (en) Phosphor-containing resin sheet and light emitting device
CN106537618B (en) Laminate and method for manufacturing light-emitting device using same
TW201728744A (en) Fluorescent sheet, light-emitting element using same, light source unit, display, and production method for light-emitting element
JP5488761B2 (en) Laminated body and method for manufacturing light emitting diode with wavelength conversion layer
JP2014116587A (en) Phosphor containing resin sheet, led element employing the same and manufacturing method thereof
TW201728685A (en) Resin composition, sheet-shaped molded article of same, light-emitting device using same, and method for manufacturing same
JP2014114446A (en) Polyorganosiloxane composition, hardened product of the composition, phosphor sheet, method of producing the phosphor sheet, light-emitting device and method of producing the light-emitting device
JP2016146375A (en) Phosphor containing resin sheet, and light-emitting device including the same, and manufacturing method thereof
JP2011222852A (en) Optical semiconductor device