TW201726945A - Non-magnetic amorphous alloy, and sputtering target material and magnetic recording medium using said alloy - Google Patents

Non-magnetic amorphous alloy, and sputtering target material and magnetic recording medium using said alloy Download PDF

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TW201726945A
TW201726945A TW105127091A TW105127091A TW201726945A TW 201726945 A TW201726945 A TW 201726945A TW 105127091 A TW105127091 A TW 105127091A TW 105127091 A TW105127091 A TW 105127091A TW 201726945 A TW201726945 A TW 201726945A
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TWI683010B (en
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Hiroyuki Hasegawa
Yumeki SHINMURA
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Sanyo Special Steel Co Ltd
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7373Non-magnetic single underlayer comprising chromium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The purpose of the present invention is to provide: a non-magnetic amorphous Co alloy that can prevent the occurrence of crystallization during high-temperature treatment (for example, heat treatment at approximately 400-500 DEG C during magnetic layer formation on a heat-assisted magnetic recording medium); and a sputtering target material and a magnetic recording medium that use the Co alloy. In order to fulfill this purpose, the present invention provides a non-magnetic amorphous alloy that includes: 0 at% to 2 at% inclusive of Fe; 5 at% to 20 at% inclusive of an A group element comprising one or more elements selected from Ti, Zr, and Hf; 16 at% to 50 at% inclusive of a B group element comprising two or more elements selected from Cr, Mo, and W; 0 at% to 25 at% inclusive of a C group element comprising one or more elements selected from V, Nb, and Ta; 0 at% to 20 at% inclusive of a D group element comprising one or more elements selected from Si, Ge, P, B, and C; and a remainder which comprises Co and unavoidable impurities. The sum of the content of the A group element and the content of the B group element is more than 35 at% to 70 at%.

Description

非磁性且非晶質之合金以及利用了該合金之濺鍍靶材及磁記錄媒體 Non-magnetic and amorphous alloy, and sputtering target and magnetic recording medium using the same [關連申請案相互參照] [Relationship between related applications]

本申請案基於2015年8月24日申請之日本申請案亦即特願2015-164493號而主張優先權,該些揭示內容全體藉由參照而納入本說明書中。 Priority is claimed on the basis of Japanese Patent Application No. 2015-164493, the entire disclosure of which is hereby incorporated by reference.

本發明有關非磁性且非晶質之Co系合金以及利用了該Co系合金之濺鍍靶材及磁記錄媒體。 The present invention relates to a non-magnetic and amorphous Co-based alloy and a sputtering target and a magnetic recording medium using the Co-based alloy.

近年來,磁記錄技術的進步顯著,為求硬式磁碟機的大容量化,磁記錄媒體的高記錄密度化不斷演進,目前正研討可實現比習知普及的垂直磁記錄媒體還更高記錄密度化之熱輔助磁記錄方式(Heat-Assisted Magnetic Recording)。 In recent years, advances in magnetic recording technology have been remarkable. In order to increase the capacity of hard disk drives, the high recording density of magnetic recording media has been evolving, and it is currently being studied to achieve higher recording than conventional magnetic recording media. Heat-Assisted Magnetic Recording (Heat-Assisted Magnetic Recording).

熱輔助磁記錄方式,為以雷射一面加熱磁記錄媒體一面記錄資料之方式。磁記錄媒體往高密度化演進,則熱擾動(thermal fluctuation)的問題會變得顯著, 亦即以磁性方式記錄下來的資料會因周圍的熱的影響而消失。為了避免此熱擾動的問題,必須提高記錄媒體中使用之磁性材料的矯頑性(coercivity),但若矯頑性變得過高,則會變得無法記錄。解決此問題之方式便是熱輔助磁記錄方式。 The heat-assisted magnetic recording method is a method of recording data while heating a magnetic recording medium with a laser. As magnetic recording media evolves toward higher density, the problem of thermal fluctuations becomes significant. That is, the magnetically recorded data will disappear due to the influence of the surrounding heat. In order to avoid the problem of this thermal disturbance, it is necessary to increase the coercivity of the magnetic material used in the recording medium, but if the coercivity becomes too high, it becomes impossible to record. The way to solve this problem is the heat assisted magnetic recording method.

熱輔助磁記錄方式中,藉由將磁記錄媒體加熱能夠大幅減低矯頑性,因此作為磁記錄媒體的磁性層材料,能夠使用磁結晶異向(rmagnetocrystalline anisotropy)常數Ku較高的材料。作為高Ku磁性材料,已知有L10型FePt合金、L10型CoPt合金、L11型CoPt合金等的有序(ordered)合金。這些磁性材料,例如在藉由濺鍍法而成膜的狀態下,係由面心立方(fcc)結構的不規則相所構成,磁結晶異向性非常小。是故,為了提高磁結晶異向性,必須將成膜後的無序(disordered)合金薄膜以高溫處理,使其變態成L10規則相。日本特開2014-220029號公報(專利文獻1)中,記載藉由添加Ag、Au、Cu、Ni等,能夠將磁性層形成時的加熱溫度減低至400~500℃程度。 In the heat-assisted magnetic recording method, since the coercivity can be greatly reduced by heating the magnetic recording medium, a material having a high magnetic crystal eccentricity constant Ku can be used as the magnetic layer material of the magnetic recording medium. As the high Ku magnetic material, an ordered alloy such as an L1 0 type FePt alloy, an L1 0 type CoPt alloy, or an L1 1 type CoPt alloy is known. These magnetic materials are composed of an irregular phase of a face centered cubic (fcc) structure, for example, in a state in which a film is formed by a sputtering method, and the magnetic crystal anisotropy is extremely small. Therefore, in order to improve the magnetic crystal anisotropy, it is necessary to treat the disordered alloy film after film formation at a high temperature to be transformed into a L1 0 regular phase. Japanese Patent Publication No. 2014-220029 (Patent Document 1) discloses that the heating temperature at the time of forming a magnetic layer can be reduced to about 400 to 500 ° C by adding Ag, Au, Cu, Ni or the like.

作為熱輔助磁記錄方式的磁記錄媒體(熱輔助磁記錄媒體),已知有具備非磁性且非晶質的層之磁記錄媒體。 As a magnetic recording medium (heat assisted magnetic recording medium) of the heat assisted magnetic recording method, a magnetic recording medium having a nonmagnetic and amorphous layer is known.

例如,日本特開2013-157071號公報(專利文獻2)中,記載一種熱輔助磁記錄媒體,依序具備基板、及基底層、及包含以具有L10構造的合金作為主成分 之磁性層。專利文獻2的基底層,例如,係由下述各者所構成:第1基底層,由非磁性且非晶質之合金例如NiTa、NiTi、CoTa、CoTi、CrTa、CrTi、CoCrZr、CoCrTa等所構成;及第2基底層,由具有以Cr為主成分的BCC結構之合金所構成;及第3基底層,由具有晶格常數2.98A以上的BCC結構之合金所構成;及第4基底層,由MgO所構成。 For example, Japanese Laid-Open Patent Publication No. 2013-157071 (Patent Document 2) discloses a heat-assisted magnetic recording medium comprising a substrate, a base layer, and a magnetic layer containing an alloy having an L1 0 structure as a main component. The underlayer of Patent Document 2 is composed of, for example, a first underlayer composed of a non-magnetic and amorphous alloy such as NiTa, NiTi, CoTa, CoTi, CrTa, CrTi, CoCrZr, or CoCrTa. And the second underlayer is composed of an alloy having a BCC structure mainly composed of Cr; and the third underlayer is composed of an alloy having a BCC structure having a lattice constant of 2.98A or more; and a fourth underlayer , made up of MgO.

此外,日本特開2012-174321號公報(專利文獻3)中,記載一種熱輔助磁記錄媒體,依序具備非磁性基體、及散熱層、及緩衝層、及軟磁性襯底層、及磁記錄層。專利文獻3的緩衝層,係由非磁性且非晶質的合金,例如CrTi、CrZr、CrTa、CrW等所構成。 Further, Japanese Laid-Open Patent Publication No. 2012-174321 (Patent Document 3) discloses a heat-assisted magnetic recording medium including a non-magnetic substrate, a heat dissipation layer, a buffer layer, a soft magnetic substrate layer, and a magnetic recording layer. . The buffer layer of Patent Document 3 is composed of a non-magnetic and amorphous alloy such as CrTi, CrZr, CrTa, CrW or the like.

此外,日本特開2011-146089號公報(專利文獻4)中,記載一種熱輔助磁記錄媒體,依序具備基板、及由非晶質的陶瓷(例如SiO2)所構成之晶種層、及結晶性(例如MgO)的配向控制層、及由以FePt合金為主成分的材料所構成之磁性層。 Further, Japanese Laid-Open Patent Publication No. 2011-146089 (Patent Document 4) discloses a heat-assisted magnetic recording medium comprising a substrate, a seed layer made of an amorphous ceramic (for example, SiO 2 ), and An alignment control layer of crystallinity (for example, MgO) and a magnetic layer made of a material mainly composed of an FePt alloy.

熱輔助磁記錄方式之磁記錄媒體中含有的非磁性且非晶質之層(特別是合金層),會因為磁性層形成時的高溫處理,而有結晶化之虞。 The non-magnetic and amorphous layer (especially the alloy layer) contained in the magnetic recording medium of the heat-assisted magnetic recording method may be crystallized due to high-temperature treatment at the time of formation of the magnetic layer.

另一方面,增本 健著「非晶質金屬之基礎」Ohmsha出版,1982,P94(非專利文獻1)中,記載一種顯現800K程度的結晶化溫度之非晶質合金。 On the other hand, Ogsha Publishing, 1982, P94 (Non-Patent Document 1) discloses an amorphous alloy which exhibits a crystallization temperature of about 800K.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2014-220029號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2014-220029

[專利文獻2]日本特開2013-157071號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-157071

[專利文獻3]日本特開2012-174321號公報 [Patent Document 3] Japanese Laid-Open Patent Publication No. 2012-174321

[專利文獻4]日本特開2011-146089號公報 [Patent Document 4] Japanese Laid-Open Patent Publication No. 2011-146089

[非專利文獻] [Non-patent literature]

[非專利文獻1]增本 健著「非晶質金屬之基礎」Ohmsha出版,1982,P94 [Non-Patent Document 1] Addition to the book "The Foundation of Amorphous Metals" by Ohmsha, 1982, P94

本發明,目的在於提供一種於高溫處理(例如,熱輔助磁記錄媒體的磁性層形成時之400~500℃程度的加熱處理)時能夠防止結晶化發生之非磁性且非晶質的Co系合金以及利用了該Co系合金之濺鍍靶材及磁記錄媒體。 It is an object of the present invention to provide a non-magnetic and amorphous Co-based alloy capable of preventing crystallization from occurring during high-temperature treatment (for example, heat treatment at a temperature of 400 to 500 ° C in the formation of a magnetic layer of a heat-assisted magnetic recording medium). And a sputtering target and a magnetic recording medium using the Co-based alloy.

為解決上述問題,本發明係提供以下發明。 In order to solve the above problems, the present invention provides the following invention.

〔1〕一種合金,含有0at%以上且2at%以下之Fe,5at%以上且20at%以下之由從Ti,Zr,Hf選擇的1種或2種以上的元素所構成之A群元素, 16at%以上且50at%以下之由從Cr,Mo,W選擇的2種以上的元素所構成之B群元素,0at%以上且25at%以下之由從V,Nb,Ta選擇的1種或2種以上的元素所構成之C群元素,及0at%以上且20at%以下之由從Si,Ge,P,B,C選擇的1種或2種以上的元素所構成之D群元素,剩餘部分由Co及不可避免雜質所構成之,非磁性且非晶質的合金,其特徵為, A群元素的含有量與B群元素的含有量之和為超過35at%且70at%以下。 [1] An alloy containing at least 0 at% and not more than 2 at% of Fe, and 5 at% or more and 20 at% or less of Group A elements composed of one or more elements selected from Ti, Zr, and Hf. a group B element composed of two or more elements selected from Cr, Mo, and W at 16 at% or more and 50 at% or less, and one or two selected from V, Nb, and Ta at 0 at% or more and 25 at% or less. a group C element composed of the above elements and a group D element of 0 at% or more and 20 at% or less of one or more elements selected from Si, Ge, P, B, and C, and the remainder a non-magnetic and amorphous alloy composed of Co and unavoidable impurities, characterized by The sum of the content of the group A element and the content of the group B element is more than 35 at% and 70 at% or less.

〔2〕如〔1〕記載之合金,其中,C群元素的含有量為1at%以上且25at%以下。 [2] The alloy according to [1], wherein the content of the group C element is 1 at% or more and 25 at% or less.

〔3〕如〔1〕或〔2〕記載之合金,其中,D群元素的含有量為5at%以上且20at%以下。 [3] The alloy according to [1] or [2], wherein the content of the group D element is 5 at% or more and 20 at% or less.

〔4〕如〔1〕~〔3〕任一項記載之合金,其中,結晶化溫度為773K以上。 [4] The alloy according to any one of [1] to [3] wherein the crystallization temperature is 773 K or more.

〔5〕一種濺鍍靶材,含有如〔1〕~〔4〕任一項記載之合金。 [5] A sputtering target comprising the alloy according to any one of [1] to [4].

〔6〕一種磁記錄媒體,具備含有如〔1〕~〔4〕任一項記載之合金的合金層。 [6] A magnetic recording medium comprising an alloy layer containing the alloy according to any one of [1] to [4].

按照本發明,係提供一種於高溫處理(例如,熱輔助磁記錄媒體的磁性層形成時之400~500℃程 度的加熱處理)時能夠防止結晶化發生之非磁性且非晶質的Co系合金以及利用了該Co系合金之濺鍍靶材及磁記錄媒體。 According to the present invention, there is provided a process at a high temperature (for example, 400 to 500 ° C when a magnetic layer of a heat assisted magnetic recording medium is formed) A non-magnetic and amorphous Co-based alloy capable of preventing crystallization from occurring, and a sputtering target and a magnetic recording medium using the Co-based alloy.

以下,詳細說明本發明。 Hereinafter, the present invention will be described in detail.

本發明之合金,為滿足以下組成之非磁性且非晶質的Co系合金。 The alloy of the present invention is a non-magnetic and amorphous Co-based alloy satisfying the following composition.

(1)Fe的含有量:0at%以上且2at%以下 (1) Content of Fe: 0 at% or more and 2 at% or less

(2)A群元素的含有量:5at%以上且20at%以下 (2) The content of the group A element: 5 at% or more and 20 at% or less

(3)B群元素的含有量:16at%以上且50at%以下 (3) The content of the B group element: 16 at% or more and 50 at% or less

(4)A群元素的含有量與B群元素的含有量之和:超過35at%且70at%以下 (4) The sum of the content of the group A element and the content of the group B element: more than 35 at% and 70 at% or less

(5)C群元素的含有量:0at%以上且25at%以下 (5) The content of the C group element: 0 at% or more and 25 at% or less

(6)D群元素的含有量:0at%以上且20at%以下 (6) The content of the D group element: 0 at% or more and 20 at% or less

本發明之合金為非磁性。本發明中所謂「非磁性」,意指使用振動試樣磁力計(VSM)以施加磁場1200kA/m測定之飽和磁通密度未滿0.3T。 The alloy of the invention is non-magnetic. The term "non-magnetic" as used in the present invention means that the saturation magnetic flux density measured by applying a magnetic field of 1200 kA/m using a vibrating sample magnetometer (VSM) is less than 0.3T.

本發明之合金為非晶質。本發明之合金,係非晶質,因此X射線繞射圖樣顯現光暈圖樣。 The alloy of the present invention is amorphous. The alloy of the present invention is amorphous, and thus the X-ray diffraction pattern exhibits a halo pattern.

本發明之合金的結晶化溫度,較佳為773K以上,更佳為873K以上。本發明之合金為非晶質,受到加熱會結晶化。本發明之非晶質合金達結晶化的溫度為「結晶化溫度」。非晶質合金結晶化時,會發生放熱反應。結 晶化溫度,是藉由測定伴隨結晶化而放熱之溫度來評估。例如、能夠藉由示差掃描熱量測定(DSC)於加熱速度0.67Ks-1的條件下評估結晶化溫度。 The crystallization temperature of the alloy of the present invention is preferably 773 K or more, more preferably 873 K or more. The alloy of the present invention is amorphous and crystallizes upon heating. The temperature at which the amorphous alloy of the present invention is crystallized is "crystallization temperature". When the amorphous alloy is crystallized, an exothermic reaction occurs. The crystallization temperature was evaluated by measuring the temperature at which heat was released accompanying crystallization. For example, the crystallization temperature can be evaluated by differential scanning calorimetry (DSC) at a heating rate of 0.67 Ks -1 .

以下,說明本發明之合金中的組成的限定理由。 Hereinafter, the reason for limiting the composition in the alloy of the present invention will be described.

(1)Fe的含有量:0at%以上且2at%以下 (1) Content of Fe: 0 at% or more and 2 at% or less

Fe,主要為用來實現Co系合金中的成本減低之元素,為本發明之合金的任意成分。Fe的含有量,以本發明之合金中含有的合計原子數作為基準,為0at%以上且2at%以下。若Fe的含有量超過2at%,則無法實現Co系合金的非晶質化(無定形化)及非磁性化,因此Fe的含有量被調整成2at%以下(包含0)。當本發明之合金含有Fe的情形下,Fe的含有量能夠在超過0at%且2at%以下的範圍內適當調整。 Fe is mainly an element for realizing cost reduction in a Co-based alloy, and is an optional component of the alloy of the present invention. The content of Fe is 0 at% or more and 2 at% or less based on the total number of atoms contained in the alloy of the present invention. When the content of Fe exceeds 2 at%, the amorphous alloy (amorphous) and non-magnetization of the Co-based alloy cannot be achieved, and therefore the Fe content is adjusted to 2 at% or less (including 0). When the alloy of the present invention contains Fe, the content of Fe can be appropriately adjusted within a range exceeding 0 at% and 2 at% or less.

(2)A群元素的含有量:5at%以上且20at%以下 (2) The content of the group A element: 5 at% or more and 20 at% or less

A群元素,由從Ti,Zr,Hf選擇的1種或2種以上的元素所構成。A群元素,主要為用來實現Co系合金中的非晶質化(無定形化)之元素,為本發明之合金的必須成分。A群元素的含有量,以本發明之合金中含有的合計原子數作為基準,為5at%以上且20at%以下、較佳為6at%以上且15at%以下、更佳為9at%以上且14at%以下。當A群元素由1種元素所構成的情形下,「A群元素的含 有量」意指該1種元素的含有量,當A群元素由2種以上的元素所構成的情形下,「A群元素的含有量」意指該2種以上的元素的合計含有量。若A群元素的含有量未滿5at%,則無法實現Co系合金的非晶質化(無定形化),因此A群元素的含有量會被調整成5at%以上、較佳為6at%以上、更佳為9at%以上。此外,若A群元素的含有量超過20at%,則無法實現Co系合金的非晶質化(無定形化),因此A群元素的含有量會被調整成20at%以下、較佳為15at%以下、更佳為14at%以下。 The group A element is composed of one or two or more elements selected from Ti, Zr, and Hf. The group A element is mainly an element for realizing amorphization (amorphization) in a Co-based alloy, and is an essential component of the alloy of the present invention. The content of the group A element is 5 at% or more and 20 at% or less, preferably 6 at% or more and 15 at% or less, more preferably 9 at% or more and 14 at% based on the total number of atoms contained in the alloy of the present invention. the following. In the case where the group A element is composed of one element, "the In the case where the group A element is composed of two or more elements, the "content of the group A element" means the total content of the two or more elements. When the content of the group A element is less than 5 at%, the alloying of the Co-based alloy cannot be achieved (amorphization), and therefore the content of the group A element is adjusted to 5 at% or more, preferably 6 at% or more. More preferably, it is 9 at% or more. In addition, when the content of the group A element exceeds 20 at%, the alloying of the Co-based alloy cannot be achieved (amorphization), and therefore the content of the group A element is adjusted to 20 at% or less, preferably 15 at%. The following is more preferably 14 at% or less.

(3)B群元素的含有量:16at%以上且50at%以下 (3) The content of the B group element: 16 at% or more and 50 at% or less

B群元素,由從Cr,Mo,W選擇的2種以上的元素所構成。B群元素,主要為用來實現Co系非晶質合金的結晶化溫度的高溫化之元素,為本發明之合金的必須成分。若單獨使用從Cr,Mo,W選擇的1種元素,則無法實現Co系合金的非晶質化(無定形化),因此使用從Cr,Mo,W選擇的2種以上的元素。B群元素的含有量,以本發明之合金中含有的合計原子數作為基準,為16at%以上且50at%以下、較佳為16at%以上且40at%以下。「B群元素的含有量」,意指構成B群元素之2種以上的元素的合計含有量。若B群元素的含有量未滿16at%,則無法實現Co系合金的非磁性化,因此B群元素的含有量會被調整成16at%以上。此外,若B群元素的含有量超過50at%,則無法實現Co系合金的非晶質化(無定 形化),因此B群元素的含有量會被調整成50at%以下、較佳為40at%以下。 The group B element is composed of two or more elements selected from Cr, Mo, and W. The group B element is mainly an element for realizing the high temperature of the crystallization temperature of the Co-based amorphous alloy, and is an essential component of the alloy of the present invention. When one element selected from Cr, Mo, and W is used alone, the Co-based alloy cannot be amorphized (amorphous), and thus two or more elements selected from Cr, Mo, and W are used. The content of the group B element is 16 at% or more and 50 at% or less, preferably 16 at% or more and 40 at% or less based on the total number of atoms contained in the alloy of the present invention. The "content of the group B element" means the total content of two or more elements constituting the group B element. When the content of the group B element is less than 16 at%, the non-magnetization of the Co-based alloy cannot be achieved, and therefore the content of the group B element is adjusted to 16 at% or more. In addition, when the content of the group B element exceeds 50 at%, the amorphous phase of the Co-based alloy cannot be achieved (undefined Since the content of the group B element is adjusted to 50 at% or less, preferably 40 at% or less.

(4)A群元素的含有量與B群元素的含有量之和:超過35at%且70at%以下 (4) The sum of the content of the group A element and the content of the group B element: more than 35 at% and 70 at% or less

A群元素的含有量與B群元素的含有量之和,以本發明之合金中含有的合計原子數作為基準,為超過35at%以上且70at%以下、較佳為36at%以上且65at%以下、更佳為37at%以上且64at%以下。若A群元素的含有量與B群元素的含有量之和為35at%以下,則無法實現Co系合金的非磁性化,因此A群元素的含有量與B群元素的含有量之和會被調整成超過35at%、較佳為36at%以上、更佳為37at%以上。此外,若A群元素的含有量與B群元素的含有量之和超過70at%,則無法實現Co系合金的非晶質化(無定形化),因此A群元素的含有量與B群元素的含有量之和會被調整成70at%以下、較佳為65at%以下、更佳為64at%以下。 The sum of the content of the group A element and the content of the group B element is more than 35 at% or more and 70 at% or less, preferably 36 at% or more and 65 at% or less based on the total number of atoms contained in the alloy of the present invention. More preferably, it is 37 at% or more and 64 at% or less. When the sum of the content of the group A element and the content of the group B element is 35 at% or less, the non-magnetization of the Co-based alloy cannot be achieved, and therefore the sum of the content of the group A element and the content of the group B element is It is adjusted to more than 35 at%, preferably 36 at% or more, and more preferably 37 at% or more. In addition, when the sum of the content of the group A element and the content of the group B element exceeds 70 at%, the amorphous phase (amorphization) of the Co-based alloy cannot be achieved, and therefore the content of the group A element and the group B element are not obtained. The sum of the contents is adjusted to 70 at% or less, preferably 65 at% or less, more preferably 64 at% or less.

(5)C群元素的含有量:0at%以上且25at%以下 (5) The content of the C group element: 0 at% or more and 25 at% or less

C群元素,由從V,Nb,Ta選擇的1種或2種以上的元素所構成。C群元素,主要為用來實現Co系合金的非晶質化(無定形化)的促進及Co系非晶質合金的結晶化溫度的高溫化之元素,為本發明之合金的任意成分。C群元素的含有量,以本發明之合金中含有的合計原子數作為基準,為0at%以上且25at%以下、較佳為0at%以上且 20at%以下、更佳為0at%以上且10at%以下。當C群元素由1種元素所構成的情形下,「C群元素的含有量」意指該1種元素的含有量,當C群元素由2種以上的元素所構成的情形下,「C群元素的含有量」意指該2種以上的元素的合計含有量。若C群元素的含有量超過25at%,則無法實現Co系合金的非晶質化,因此C群元素的含有量會被調整成25at%以下、較佳為20at%以下、更佳為10at%以下。當本發明之合金含有C群元素的情形下,C群元素的含有量能夠在超過0at%且25at%以下的範圍內適當調整。C群元素的含有量,例如為1at%以上、3at%以上或4at%以上。 The group C element is composed of one or two or more elements selected from V, Nb, and Ta. The group C element is mainly an element for promoting the amorphization (amorphization) of the Co-based alloy and the high temperature of the crystallization temperature of the Co-based amorphous alloy, and is an optional component of the alloy of the present invention. The content of the group C element is 0 at% or more and 25 at% or less, preferably 0 at% or more based on the total number of atoms contained in the alloy of the present invention. 20 at% or less, more preferably 0 at% or more and 10 at% or less. When the C group element is composed of one element, the "content of the C group element" means the content of the one element, and when the C group element is composed of two or more types of elements, "C The content of the group element means the total content of the two or more elements. When the content of the group C element exceeds 25 at%, the amorphous phase of the Co-based alloy cannot be achieved. Therefore, the content of the group C element is adjusted to 25 at% or less, preferably 20 at% or less, and more preferably 10 at%. the following. When the alloy of the present invention contains a group C element, the content of the group C element can be appropriately adjusted within a range of more than 0 at% and 25 at% or less. The content of the group C element is, for example, 1 at% or more, 3 at% or more, or 4 at% or more.

(6)D群元素的含有量:0at%以上且20at%以下 (6) The content of the D group element: 0 at% or more and 20 at% or less

D群元素,由從Si、Ge、P、B、C選擇的1種或2種以上的元素所構成。D群元素,主要為用來改善Co系合金中的非晶質性(無定形性)之元素,為本發明之合金的任意成分。D群元素的含有量,以本發明之合金中含有的合計原子數作為基準,為0at%以上且20at%以下、較佳為0at%以上且15at%以下、更佳為0at%以上且10at%以下。當D群元素由1種元素所構成的情形下,「D群元素的含有量」意指該1種元素的含有量,當D群元素由2種以上的元素所構成的情形下,「D群元素的含有量」意指該2種以上的元素的合計含有量。若D群元素的含有量超過20at%,則無法實現Co系合金的非晶質化(無定形 化),因此D群元素的含有量會被調整成20at%以下、較佳為15at%以下、更佳為10at%以下。當本發明之合金含有D群元素的情形下,D群元素的含有量能夠在超過0at%且20at%以下的範圍內適當調整。D群元素的含有量,例如為5at%以上。 The group D element is composed of one or two or more elements selected from Si, Ge, P, B, and C. The group D element is mainly an element for improving the amorphous (amorphous) in the Co-based alloy, and is an optional component of the alloy of the present invention. The content of the group D element is 0 at% or more and 20 at% or less, preferably 0 at% or more and 15 at% or less, more preferably 0 at% or more and 10 at% based on the total number of atoms contained in the alloy of the present invention. the following. When the D group element is composed of one type of element, the "content of the D group element" means the content of the one element, and when the D group element is composed of two or more elements, "D" The content of the group element means the total content of the two or more elements. When the content of the D group element exceeds 20 at%, the amorphous phase of the Co-based alloy cannot be achieved (amorphous) Therefore, the content of the D group element is adjusted to 20 at% or less, preferably 15 at% or less, and more preferably 10 at% or less. When the alloy of the present invention contains a group D element, the content of the group D element can be appropriately adjusted within a range exceeding 0 at% and 20 at% or less. The content of the D group element is, for example, 5 at% or more.

本發明之合金中,Fe、A群元素、B群元素、C群元素及D群元素以外的剩餘部分,由Co及不可避免雜質所構成。作為不可避免雜質,例如可舉出Al,Cu,Mn等。不可避免雜質的含有量,較佳為1000ppm以下。 In the alloy of the present invention, the remainder other than the Fe, the group A element, the group B element, the group C element, and the group D element is composed of Co and unavoidable impurities. Examples of the unavoidable impurities include Al, Cu, Mn, and the like. The content of the unavoidable impurities is preferably 1000 ppm or less.

本發明之濺鍍靶材,含有本發明之合金。本發明之濺鍍靶材,能夠使用來形成含有本發明之合金的合金層(合金薄膜)。 The sputtering target of the present invention contains the alloy of the present invention. The sputtering target of the present invention can be used to form an alloy layer (alloy film) containing the alloy of the present invention.

本發明之磁記錄媒體,具備含有本發明之合金的合金層(合金薄膜)。本發明之磁記錄媒體,例如為垂直磁記錄媒體、熱輔助磁記錄媒體等。含有本發明之合金的合金層(合金薄膜),能夠藉由使用了含有本發明之合金的濺鍍靶材之濺鍍法而形成。 The magnetic recording medium of the present invention comprises an alloy layer (alloy film) containing the alloy of the present invention. The magnetic recording medium of the present invention is, for example, a perpendicular magnetic recording medium, a heat assisted magnetic recording medium or the like. The alloy layer (alloy film) containing the alloy of the present invention can be formed by a sputtering method using a sputtering target containing the alloy of the present invention.

本發明之合金,於高溫處理(例如,熱輔助磁記錄媒體的磁性層形成時之400~500℃程度的加熱處理)時能夠防止結晶化發生。是故,本發明之合金,適合作為製造時必須高溫處理之磁記錄媒體(例如,熱輔助磁記錄媒體)所具備的合金層當中要求非磁性及非晶質的合金層之材料。 The alloy of the present invention can prevent crystallization from occurring during high-temperature treatment (for example, heat treatment at a temperature of 400 to 500 ° C in the formation of a magnetic layer of a heat-assisted magnetic recording medium). Therefore, the alloy of the present invention is suitable as a material which requires a non-magnetic and amorphous alloy layer among the alloy layers provided in a magnetic recording medium (for example, a heat-assisted magnetic recording medium) which is required to be processed at a high temperature.

作為具備非磁性且非晶質的層之磁記錄媒 體,例如,可舉出依序具備基板、及包含非磁性且非晶質的基底層之複數個基底層、及包含以具有L10結構的合金作為主成分之磁性層的熱輔助磁記錄媒體(例如,日本特開2013-157071號公報);依序具備非磁性基體、及散熱層、及非磁性且非晶質之緩衝層、及軟磁性襯底層、及磁記錄層的熱輔助磁記錄媒體(例如,日本特開2012-174321號公報);依序具備基板、及非磁性且非晶質之晶種層、及結晶性(例如MgO)之配向控制層、及由以FePt合金為主成分的材料所構成之磁性層的熱輔助磁記錄媒體(例如,日本特開2011-146089號公報)等。本發明之合金,能夠使用作為該些非磁性且非晶質之層的材料。 Examples of the magnetic recording medium having a non-magnetic and amorphous layer include a substrate, a plurality of underlayers including a non-magnetic and amorphous underlayer, and a structure having an L1 0 structure. A heat-assisted magnetic recording medium having a magnetic layer as a main component (for example, JP-A-2013-157071); a non-magnetic substrate, a heat dissipation layer, a non-magnetic and amorphous buffer layer, and a soft layer are sequentially provided; A magnetically-assisted magnetic recording medium having a magnetic substrate layer and a magnetic recording layer (for example, JP-A-2012-174321); a substrate, a non-magnetic and amorphous seed layer, and crystallinity (for example, MgO) are sequentially provided. A heat-assisted magnetic recording medium having a magnetic layer composed of a material containing a FePt alloy as a main component (for example, JP-A-2011-146089). As the alloy of the present invention, a material which is a layer of these nonmagnetic and amorphous layers can be used.

[實施例] [Examples]

以下,基於實施例,具體地說明本發明。 Hereinafter, the present invention will be specifically described based on examples.

通常,垂直磁記錄媒體中的薄膜,是濺鍍和其成分相同成分的濺鍍靶材,在玻璃基板等上成膜而獲得。此處,藉由濺鍍而被成膜的薄膜會受到急冷。相對於此,作為實施例及比較例的供試材,是使用藉由單輥式的液體急冷裝置所製作出的急冷薄帶。此舉是將由於實際藉由濺鍍並受到急冷而成膜之薄膜的成分所造成之對於諸特性的影響,簡易地藉由液體急冷薄帶予以評估。 Generally, a film in a perpendicular magnetic recording medium is obtained by sputtering a sputtering target having the same composition as that of a composition, and forming a film on a glass substrate or the like. Here, the film formed by sputtering is quenched. On the other hand, as the test pieces of the examples and the comparative examples, a quenched ribbon produced by a single-roll type liquid rapid cooling device was used. This is an effect on the properties due to the composition of the film which is actually formed by sputtering and being quenched, and is easily evaluated by a liquid quenched ribbon.

〔急冷薄帶的製作條件〕 [ conditions for the production of quenched ribbons]

將依表1及表2所示成分組成秤量而成之原料30g, 在直徑10×40mm程度的水冷銅模中於減壓Ar中予以電弧熔解,作成急冷薄帶的熔解母材。急冷薄帶的製作條件如下所述。以單輥方式,在直徑15mm的石英管中設置此熔解母材,出湯噴嘴直徑訂為1mm、環境氣壓61kPa、噴霧差壓69kPa、銅輥(直徑300mm)的轉數3000rpm、於銅輥與出湯噴嘴的間距0.3mm下出湯。出湯溫度訂為各熔解母材熔化落下後的瞬間。將如此製作出的急冷薄帶作為供試材,評估了以下項目。 30g of raw materials obtained by weighing the ingredients shown in Tables 1 and 2, In a water-cooled copper mold having a diameter of about 10 × 40 mm, it was subjected to arc melting in a reduced pressure Ar to prepare a molten base material for the quenched ribbon. The production conditions of the quenched ribbon are as follows. The molten base material was placed in a quartz tube having a diameter of 15 mm in a single roll manner, and the diameter of the soup nozzle was set to 1 mm, the ambient air pressure was 61 kPa, the spray differential pressure was 69 kPa, and the number of revolutions of the copper roll (diameter 300 mm) was 3000 rpm. The soup was placed at a pitch of 0.3 mm. The temperature of the soup is set as the moment after the melting of the molten base material is melted and dropped. The quenched ribbon thus produced was used as a test material, and the following items were evaluated.

〔急冷薄帶的飽和磁通密度之評估〕 [Evaluation of saturation flux density of quenched ribbons]

飽和磁通密度,是以VSM裝置(振動試樣磁力計),在施加磁場1200kA/m下測定。供試材的重量訂為15mg程度。表1及表2中,未滿0.3T的飽和磁通密度之供試材訂為「A」、0.3T以上之供試材訂為「C」。 The saturation magnetic flux density was measured by a VSM device (vibration sample magnetometer) at an applied magnetic field of 1200 kA/m. The weight of the test material is set to about 15 mg. In Tables 1 and 2, the test material of the saturation magnetic flux density of less than 0.3 T is set to "A", and the test material of 0.3T or more is set to "C".

〔急冷薄帶的構造〕 [Structure of quenched ribbon]

通常,若測定非晶質材料的X射線繞射圖樣,則見不到繞射峰,而會成為非晶質特有的光暈圖樣。此外,當不是完全的非晶質的情形下,雖可見到繞射峰,但相較於結晶材料其峰值高度會變低,且亦會見到光暈圖樣。鑑此,依下述方法評估了非晶質性。 In general, when an X-ray diffraction pattern of an amorphous material is measured, a diffraction peak is not observed, and an amorphous specific halo pattern is obtained. Further, in the case where it is not completely amorphous, although a diffraction peak is observed, the peak height thereof becomes lower as compared with the crystalline material, and a halo pattern is also seen. For this reason, the amorphous property was evaluated by the following method.

〔非晶質性的評估〕 [Evaluation of Amorphousness]

以雙面膠帶將供試材貼附在玻璃板,以X射線繞射裝 置獲得繞射圖樣。此時,以測定面會成為急冷薄帶的銅輥接觸面之方式來貼附供試材。X射線源為Cu-α線,以掃描速度4°/min測定。表1及表2中,此繞射圖樣中能夠確認光暈圖樣之供試材訂為「A」、完全見不到光暈圖樣之供試材訂為「C」。 Attach the test material to the glass plate with double-sided tape and apply X-ray diffraction Set the diffraction pattern. At this time, the test material was attached so that the measurement surface became the contact surface of the copper roll of the quenched ribbon. The X-ray source was a Cu-α line and was measured at a scanning speed of 4°/min. In Tables 1 and 2, in the diffraction pattern, the test material which can confirm the halo pattern is set to "A", and the test material which does not see the halo pattern at all is set to "C".

〔急冷薄帶的結晶化溫度之評估〕 [Evaluation of crystallization temperature of quenched ribbon]

通常,非晶質材料,伴隨加熱會引發結晶化,發生了結晶化的溫度稱為結晶化溫度。此外,結晶化時會發生放熱反應。結晶化溫度,是藉由測定伴隨結晶化而放熱之溫度來評估。鑑此,依下述方法評估了結晶化溫度。藉由示差掃描熱量測定(DSC)於加熱速度0.67Ks-1的條件下調查。表1及表2中,873K以上的結晶化溫度之供試材訂為「A」、773K以上未滿873的結晶化溫度之供試材訂為「B」、未滿773K的結晶化溫度之供試材訂為「C」。 Usually, an amorphous material causes crystallization with heating, and a temperature at which crystallization occurs is referred to as a crystallization temperature. In addition, an exothermic reaction occurs during crystallization. The crystallization temperature was evaluated by measuring the temperature at which heat was released accompanying crystallization. For this reason, the crystallization temperature was evaluated in the following manner. It was investigated by differential scanning calorimetry (DSC) under the conditions of a heating rate of 0.67 Ks -1 . In Tables 1 and 2, the test materials for the crystallization temperature of 873 K or higher are set to "A", and the test materials of crystallization temperature of 773 K or more and less than 873 are set to "B", and the crystallization temperature is less than 773 K. The test material is ordered as "C".

表1及表2中,No.1~36為本發明例,No.37~46為比較例。 In Tables 1 and 2, Nos. 1 to 36 are examples of the invention, and Nos. 37 to 46 are comparative examples.

如表1及表2所示,本發明例No.1~36,為滿足以下組成之Co系合金,飽和磁通密度、非晶質性及結晶化溫度之評估皆為「A」或「B」。 As shown in Tables 1 and 2, in Examples Nos. 1 to 36 of the present invention, the evaluation of the saturation magnetic flux density, the amorphous property, and the crystallization temperature was "A" or "B" for the Co-based alloy satisfying the following composition. "."

(1)Fe的含有量:0at%以上且2at%以下 (1) Content of Fe: 0 at% or more and 2 at% or less

(2)A群元素的含有量:5at%以上且20at%以下 (2) The content of the group A element: 5 at% or more and 20 at% or less

(3)B群元素的含有量:16at%以上且50at%以下 (3) The content of the B group element: 16 at% or more and 50 at% or less

(4)A群元素的含有量與B群元素的含有量之和:超過35at%且70at%以下 (4) The sum of the content of the group A element and the content of the group B element: more than 35 at% and 70 at% or less

(5)C群元素的含有量:0at%以上且25at%以下 (5) The content of the C group element: 0 at% or more and 25 at% or less

(6)D群元素的含有量:0at%以上且20at%以下 (6) The content of the D group element: 0 at% or more and 20 at% or less

比較例No.37,其B群元素的含有量未滿16at%,A群元素的含有量與B群元素的含有量之和為35at%以下,因此具有磁性。比較例No.38,其構成B群元素之元素為1種類,因此不是非晶質,結晶化溫度亦低。比較例No.39,其A群元素的含有量超過20at%,因此不是非晶質,結晶化溫度亦低。比較例No.40,其A群元素的含有量未滿5at%,因此不是非晶質,結晶化溫度亦低。比較例No.41,其B群元素的含有量超過50at%,因此不是非晶質,結晶化溫度亦低。比較例No.42及43,其C群元素的含有量超過25at%,因此不是非晶質,結晶化溫度亦低。比較例No.44及45,其D群元素的含有量超過20at%,因此不是非晶質,結晶化溫度亦低。比 較例No.46,其Fe的含有量超過2at%,因此不是非磁性及非晶質,結晶化溫度亦低。 In Comparative Example No. 37, the content of the Group B element was less than 16 at%, and the sum of the content of the Group A element and the content of the Group B element was 35 at% or less. In Comparative Example No. 38, since the element constituting the group B element was of one type, it was not amorphous, and the crystallization temperature was also low. In Comparative Example No. 39, since the content of the Group A element exceeded 20 at%, it was not amorphous, and the crystallization temperature was also low. In Comparative Example No. 40, since the content of the group A element was less than 5 at%, it was not amorphous and the crystallization temperature was also low. In Comparative Example No. 41, since the content of the Group B element exceeded 50 at%, it was not amorphous, and the crystallization temperature was also low. In Comparative Examples Nos. 42 and 43, since the content of the Group C element exceeded 25 at%, it was not amorphous, and the crystallization temperature was also low. In Comparative Examples Nos. 44 and 45, since the content of the group D element exceeded 20 at%, it was not amorphous, and the crystallization temperature was also low. ratio In Comparative Example No. 46, since the Fe content exceeds 2 at%, it is not nonmagnetic and amorphous, and the crystallization temperature is also low.

接著,揭示濺鍍靶材的製造方法。針對表1之本發明例No.1、No.10、No.15、No.25、No.30及表2之比較例No.37、No.45所示7種類的成分組成,秤量熔解原料,在減壓Ar氣體環境的耐火物坩堝內予以感應加熱熔解後,藉由坩堝下部的直徑8mm的噴嘴出湯,藉由Ar氣體予以霧化。將此氣體霧化粉末作為原料,予以脫氣裝入外徑220mm、內徑210mm、長度200mm的SC製之罐。脫氣時的真空到達度訂為約1.3×10-2Pa。 Next, a method of manufacturing a sputtering target is disclosed. The compositional compositions of Nos. 1, No. 10, No. 15, No. 25, No. 30 of Table 1 and Comparative Examples No. 37 and No. 45 of Table 2 were used to weigh the melting raw materials. After being inductively heated and melted in a refractory crucible in a decompressed Ar gas atmosphere, the soup was discharged by a nozzle having a diameter of 8 mm in the lower part of the crucible, and was atomized by Ar gas. This gas atomized powder was used as a raw material, and degassed into an SC tank having an outer diameter of 220 mm, an inner diameter of 210 mm, and a length of 200 mm. The degree of vacuum arrival at the time of degassing is set to be about 1.3 × 10 -2 Pa.

將上述的粉末充填胚塊(billet)加熱至1150℃後,裝入直徑230mm的拘束型(restrictive)容器內,以500MPa的加壓予以成形。將依上述方法製作出的固化成形體,藉由割線加工(wire cut)、車床加工、平面研磨,加工成直徑180mm、厚度7mm的圓盤狀,作為濺鍍靶材。 The above-mentioned powder-filled bridle was heated to 1,150 ° C, and then placed in a restrictive container having a diameter of 230 mm, and molded at a pressure of 500 MPa. The cured molded body produced by the above method was processed into a disk shape having a diameter of 180 mm and a thickness of 7 mm by wire cutting, lathe processing, and surface polishing, and used as a sputtering target.

針對該些7種類的成分組成,使用濺鍍靶材在玻璃基板上成膜出濺鍍膜。濺鍍膜的磁通密度、非晶質性及結晶化溫度,於任一組成皆成為和表1及表2相同之結果。 For the seven types of component compositions, a sputter film was formed on the glass substrate using a sputtering target. The magnetic flux density, the amorphous property, and the crystallization temperature of the sputtered film were the same as those of Tables 1 and 2 in any of the compositions.

如以上所述般,藉由本發明,係提供一種具有足夠高的結晶化溫度的非磁性且非晶質性(非晶質性)之Co系合金以及利用了該Co系合金之濺鍍靶材及磁記錄媒體。 As described above, according to the present invention, a non-magnetic and amorphous (amorphous) Co-based alloy having a sufficiently high crystallization temperature and a sputtering target using the Co-based alloy are provided. And magnetic recording media.

Claims (6)

一種合金,含有0at%以上且2at%以下之Fe,5at%以上且20at%以下之由從Ti,Zr,Hf選擇的1種或2種以上的元素所構成之A群元素,16at%以上且50at%以下之由從Cr,Mo,W選擇的2種以上的元素所構成之B群元素,0at%以上且25at%以下之由從V,Nb,Ta選擇的1種或2種以上的元素所構成之C群元素,及0at%以上且20at%以下之由從Si,Ge,P,B,C選擇的1種或2種以上的元素所構成之D群元素,剩餘部分由Co及不可避免雜質所構成之,非磁性且非晶質的合金,其特徵為,A群元素的含有量與B群元素的含有量之和為超過35at%且70at%以下。 An alloy containing 0 at% or more and 2 at% or less of Fe, 5 at% or more and 20 at% or less of Group A elements composed of one or more elements selected from Ti, Zr, and Hf, 16 at% or more a group B element composed of two or more elements selected from Cr, Mo, and W at 50 at% or less, and one or two or more elements selected from V, Nb, and Ta at 0 at% or more and 25 at% or less. The group C element and the group D element composed of one or two or more elements selected from Si, Ge, P, B, and C, which are 0 at% or more and 20 at% or less, and the remainder are Co and A non-magnetic and amorphous alloy which is composed of impurities and which is characterized in that the sum of the content of the group A element and the content of the group B element is more than 35 at% and not more than 70 at%. 如申請專利範圍第1項所述之合金,其中,C群元素的含有量為1at%以上且25at%以下。 The alloy according to claim 1, wherein the content of the group C element is 1 at% or more and 25 at% or less. 如申請專利範圍第1項所述之合金,其中,D群元素的含有量為5at%以上且20at%以下。 The alloy according to claim 1, wherein the content of the group D element is 5 at% or more and 20 at% or less. 如申請專利範圍第1項所述之合金,其中,結晶化溫度為773K以上。 The alloy according to claim 1, wherein the crystallization temperature is 773 K or more. 一種濺鍍靶材,含有如申請專利範圍第1項所述之合金。 A sputtering target comprising an alloy as described in claim 1 of the patent application. 一種磁記錄媒體,具備含有如申請專利範圍第1項所述之合金的合金層。 A magnetic recording medium comprising an alloy layer containing an alloy as described in claim 1 of the patent application.
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