TW201725603A - Plasma processing apparatus - Google Patents
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Abstract
Description
本發明涉及一種電漿（plasma）處理裝置。The present invention relates to a plasma processing apparatus.
在半導體裝置或液晶顯示器（display）或者光碟（disk）等各種製品的製造步驟中，有在例如晶片（wafer）或玻璃（glass）基板等工件（work）上形成光學膜等薄膜的情況。薄膜可以藉由對工件重複進行形成金屬等的膜的成膜、及對所形成的膜重複進行蝕刻（etching）、氧化或氮化等膜處理而製成。In the manufacturing steps of various products such as a semiconductor device, a liquid crystal display, or a disk, a film such as an optical film may be formed on a work such as a wafer or a glass substrate. The film can be formed by repeating a film formation of a film forming a metal or the like on a workpiece, and repeatedly performing a film treatment such as etching, oxidation, or nitridation on the formed film.
成膜及膜處理可以利用各種方法而進行，作為其中之一，有使用電漿的方法。成膜是在真空容器內配置包含要成膜的材料的靶材（target）。向真空容器內導入惰性氣體，且對靶材施加直流電壓使惰性氣體電漿化而生成離子，並使該離子碰撞靶材。從靶材擊出的材料堆積在工件上，由此進行成膜。Film formation and film treatment can be carried out by various methods, and as one of them, there is a method of using plasma. The film formation is a target in which a material containing a film to be formed is disposed in a vacuum vessel. An inert gas is introduced into the vacuum vessel, and a direct current voltage is applied to the target to plasma the inert gas to generate ions, and the ions collide with the target. The material struck from the target is deposited on the workpiece, thereby performing film formation.
膜處理是在真空容器內配置用於使電漿產生的電極，且將已成膜的工件配置在電極的下方。向真空容器內導入製程氣體（process gas），且對電極施加高頻電壓使製程氣體電漿化而生成離子。在蝕刻的情況下，製程氣體使用氬氣等惰性氣體。在氧化處理的情況下，製程氣體使用氧氣，在氮化處理的情況下，製程氣體使用氮氣。藉由使所生成的離子碰撞工件上的膜，而進行對膜進行蝕刻、或者生成氧化物或氮化物等膜處理。The membrane treatment is to arrange an electrode for generating plasma in a vacuum vessel, and to arrange the formed film below the electrode. A process gas is introduced into the vacuum vessel, and a high-frequency voltage is applied to the electrode to plasma the process gas to generate ions. In the case of etching, the process gas uses an inert gas such as argon. In the case of the oxidation treatment, the process gas uses oxygen, and in the case of the nitridation treatment, the process gas uses nitrogen. The film is etched or a film process such as oxide or nitride is formed by causing the generated ions to collide with the film on the workpiece.
存在如下的電漿處理裝置：在一個真空容器的內部配置旋轉台（table），且沿旋轉台的上方的周向配置多個成膜用單元（unit）與膜處理用單元，以便能夠連續進行這種成膜與膜處理（例如，參照專利文獻1及專利文獻2）。將工件保持於旋轉臺上進行搬送，且使其通過成膜單元與膜處理單元的正下方，由此形成光學膜等。There is a plasma processing apparatus in which a rotary table is disposed inside a vacuum container, and a plurality of film forming units and film processing units are disposed in the circumferential direction above the rotary table so as to be continuously performed. Such film formation and film treatment (for example, refer to Patent Document 1 and Patent Document 2). The workpiece is held on a rotary table, transported, and passed through the film forming unit and the film processing unit, thereby forming an optical film or the like.
例如，如專利文獻1及專利文獻2般的將電極形成為上端封閉的筒狀（以下，稱為“筒形電極”）的膜處理單元中，將製程氣體導入至筒形電極的內部，由此，電漿產生於筒形電極的內部。將筒形電極的開口部以與旋轉台的面隔開狹小的間隙（clearance）而相向的方式配置，且構成為工件在狹小的間隙處通過開口部的下方。由此，能夠一面減少電漿的外部流出一面進行膜處理。For example, in the film processing unit in which the electrode is formed into a cylindrical shape (hereinafter referred to as a "cylinder electrode") whose upper end is closed, as in Patent Document 1 and Patent Document 2, the process gas is introduced into the inside of the cylindrical electrode. Thus, the plasma is generated inside the cylindrical electrode. The opening of the cylindrical electrode is disposed so as to face the surface of the turntable with a narrow clearance therebetween, and the workpiece passes through the lower portion of the opening at a narrow gap. Thereby, it is possible to perform film processing while reducing the external flow of the plasma.
[現有技術文獻] [專利文獻] [專利文獻1] 日本專利特開2002-256428號公報 [專利文獻2] 日本專利特公昭57-27183號公報[PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-256428 [Patent Document 2] Japanese Patent Publication No. Sho 57-27183
[發明所要解決的問題] 在膜處理單元中，為了使蝕刻速率或化合物生成速率提高，需要使對電極施加的電壓增加，或者使導入的製程氣體的壓力增加。然而，如果電壓或氣壓增加，則有如下可能性：產生於筒形電極內部的電漿向外部擴散，自偏壓（self-bias voltage）反轉，而使膜處理不成立。[Problem to be Solved by the Invention] In the film processing unit, in order to increase the etching rate or the rate of compound formation, it is necessary to increase the voltage applied to the electrode or to increase the pressure of the introduced process gas. However, if the voltage or the gas pressure is increased, there is a possibility that the plasma generated inside the cylindrical electrode diffuses to the outside, and the self-bias voltage is reversed, so that the film treatment is not established.
本發明為了解決所述課題，目的在於抑制筒形電極的內部的放電向外部洩漏，使電漿處理裝置的處理穩定化且使處理速度提高。In order to solve the above problems, the present invention has an object of suppressing leakage of the discharge inside the cylindrical electrode to the outside, stabilizing the processing of the plasma processing apparatus, and improving the processing speed.
[解決問題的技術手段] 為了達成所述目的，本發明的電漿處理裝置包括：筒形電極，在一端設有開口部，且內部被導入製程氣體；電源，對所述筒形電極施加電壓；搬送部，對工件在所述開口部的正下方進行搬入及搬出；以及磁性構件，在所述開口部的附近，形成包含與所述工件的搬送方向平行的磁力線的磁場。[Means for Solving the Problems] In order to achieve the object, a plasma processing apparatus of the present invention includes: a cylindrical electrode having an opening at one end and internally introduced with a process gas; and a power source for applying a voltage to the cylindrical electrode The conveying unit carries in and out the workpiece directly under the opening, and the magnetic member forms a magnetic field including magnetic lines of force parallel to the conveying direction of the workpiece in the vicinity of the opening.
[發明的效果] 藉由利用磁性構件在筒形電極的開口部的附近形成磁場，筒形電極的內部的電漿的電子被磁場捕捉，從而即便在高電壓及高氣壓的條件下，筒形電極的內部的放電也不易洩漏至外部。由此，能夠抑制自偏壓的反轉，而穩定地進行膜處理。而且，藉由磁場包含與工件的搬送方向平行的磁力線，而在筒形電極的內部形成磁場的隧道（tunnel），電漿被該隧道引導而均等地擴散，所以離子遍佈工件整體。因此，能夠使電漿處理裝置的蝕刻速率及化合物生成速率提高，且能夠提高可靠性。[Effects of the Invention] By forming a magnetic field in the vicinity of the opening of the cylindrical electrode by the magnetic member, electrons of the plasma inside the cylindrical electrode are trapped by the magnetic field, and the cylindrical shape is obtained even under conditions of high voltage and high pressure. The discharge inside the electrode is also not easily leaked to the outside. Thereby, the inversion of the self-bias can be suppressed, and the film processing can be performed stably. Further, the magnetic field includes a magnetic field line parallel to the transport direction of the workpiece, and a tunnel of a magnetic field is formed inside the cylindrical electrode, and the plasma is uniformly guided by the tunnel, so that the ions are spread over the entire workpiece. Therefore, the etching rate and the compound formation rate of the plasma processing apparatus can be improved, and the reliability can be improved.
[第一實施方式] [構成] 參照附圖對本發明的實施方式進行具體說明。[First Embodiment] [Configuration] Embodiments of the present invention will be specifically described with reference to the drawings.
如圖1及圖2所示，電漿處理裝置具有大致圓筒型的腔室（chamber）1。在腔室1設有排氣部2，能夠將腔室1的內部排氣成真空。在腔室1的內部配置有大致圓形的旋轉台3。旋轉台3的中心軸與未圖示的驅動機構連結。旋轉台3藉由驅動機構的驅動而以中心軸為旋轉軸進行旋轉。在旋轉台3的上表面，設有多個保持工件W的保持部3a。多個保持部3a沿旋轉台3的周向以等間隔設置。藉由旋轉台3的旋轉，而使由保持部3a保持的工件W沿旋轉台3的周向移動。換言之，在旋轉台3的面上，形成有工件的圓形的移動軌跡即搬送路徑（以下，稱為“搬送路徑P”）。As shown in FIGS. 1 and 2, the plasma processing apparatus has a substantially cylindrical chamber 1. The chamber 1 is provided with an exhaust portion 2, and the inside of the chamber 1 can be evacuated to a vacuum. A substantially circular rotating table 3 is disposed inside the chamber 1. The center axis of the turntable 3 is coupled to a drive mechanism (not shown). The rotary table 3 is rotated by the central axis as a rotation axis by driving of the drive mechanism. On the upper surface of the turntable 3, a plurality of holding portions 3a for holding the workpiece W are provided. The plurality of holding portions 3a are provided at equal intervals along the circumferential direction of the turntable 3. The workpiece W held by the holding portion 3a is moved in the circumferential direction of the turntable 3 by the rotation of the turntable 3. In other words, on the surface of the turntable 3, a transport path (hereinafter referred to as "transport path P") which is a circular movement locus of the workpiece is formed.
以後，當僅稱為“周向”時表示“旋轉台3的周向”，當僅稱為“半徑方向”時表示“旋轉台3的半徑方向”。而且，本實施方式中，作為工件W的示例，使用平板狀的基板，但進行電漿處理的工件W的種類並不限定於特定者。例如，也可以使用中心具有凹部或凸部的彎曲的基板。Hereinafter, when it is simply referred to as "circumferential direction", it means "the circumferential direction of the rotary table 3", and when it is only called "radial direction", it means "the radial direction of the rotary table 3". Further, in the present embodiment, a flat plate substrate is used as an example of the workpiece W, but the type of the workpiece W subjected to the plasma treatment is not limited to a specific one. For example, a curved substrate having a concave portion or a convex portion at the center may also be used.
在旋轉台3上方，設有電漿處理裝置中的進行各步驟的處理的單元（以下，稱為“處理單元”）。各處理單元沿形成於旋轉台3的面上的工件的搬送路徑P，以彼此隔開規定的間隔而相鄰的方式配置。使由保持部3a保持的工件W通過各處理單元的下方，由此進行各步驟的處理。Above the turntable 3, a unit (hereinafter referred to as a "processing unit") that performs processing in each step in the plasma processing apparatus is provided. Each of the processing units is disposed adjacent to the transport path P of the workpiece formed on the surface of the turntable 3 at a predetermined interval. The workpiece W held by the holding portion 3a is passed through the lower side of each processing unit, whereby the processing of each step is performed.
圖1的例中，沿旋轉台3上的搬送路徑P配置有七個處理單元4a～處理單元4g。本實施方式中，處理單元4a、處理單元4b、處理單元4c、處理單元4d、處理單元4f、處理單元4g是對工件W進行成膜處理的成膜單元。處理單元4e是對利用成膜單元而形成於工件W上的膜進行處理的膜處理單元。本實施方式中，將成膜單元作為進行濺射（sputtering）的單元來說明。另外，將膜處理單元作為進行蝕刻的單元來說明。在處理單元4a與處理單元4g之間設有裝載鎖定（load-lock）部5，該裝載鎖定部5自外部將未處理的工件W搬入腔室1的內部，且將處理完的工件W搬出至腔室1的外部。另外，本實施方式中，將工件W的搬送方向設為沿圖1的順時針方向從處理單元4a的位置朝向處理單元4g的方向。當然這是一例，搬送方向、處理單元的種類、以及順序及數量並不限定於特定者，可以適當決定。In the example of Fig. 1, seven processing units 4a to 4g are disposed along the transport path P on the turntable 3. In the present embodiment, the processing unit 4a, the processing unit 4b, the processing unit 4c, the processing unit 4d, the processing unit 4f, and the processing unit 4g are film forming units that perform a film forming process on the workpiece W. The processing unit 4e is a film processing unit that processes a film formed on the workpiece W by the film forming unit. In the present embodiment, the film formation unit will be described as a unit for performing sputtering. Further, the film processing unit will be described as a unit for performing etching. A load-lock portion 5 is provided between the processing unit 4a and the processing unit 4g, and the load lock portion 5 carries the unprocessed workpiece W into the inside of the chamber 1 from the outside, and carries out the processed workpiece W. To the outside of the chamber 1. Further, in the present embodiment, the conveying direction of the workpiece W is the direction from the position of the processing unit 4a toward the processing unit 4g in the clockwise direction of FIG. Of course, this is an example, and the transport direction, the type of the processing unit, and the order and number are not limited to a specific one, and can be appropriately determined.
將作為成膜單元的處理單元4a的構成例示於圖2。其他成膜單元4b、成膜單元4c、成膜單元4d、成膜單元4f、成膜單元4g也可以與成膜單元4a同樣地構成，但也可以應用其他構成。如圖2所示，成膜單元4a具備靶材6，該靶材6作為濺射源而安裝於腔室1的內部的上表面。靶材6是包含要堆積於工件W上的材料的板狀的構件。靶材6設置於當工件W通過成膜單元4a的下方時與工件W相向的位置。靶材6與對靶材6施加直流電壓的直流（Direct Current，DC）電源7連接。而且，在腔室1的內部的上表面的安裝有靶材6的部位的附近，設置有將濺射氣體導入腔室1的內部的濺射氣體導入部8。濺射氣體可以使用例如氬氣等惰性氣體。在靶材6的周圍，設置有用於減少電漿的流出的隔離壁9。另外，電源可以應用DC脈衝電源、射頻（Radio Frequency，RF）電源等眾所周知的電源。An example of the configuration of the processing unit 4a as a film forming unit is shown in Fig. 2 . The other film forming unit 4b, the film forming unit 4c, the film forming unit 4d, the film forming unit 4f, and the film forming unit 4g may be configured in the same manner as the film forming unit 4a. However, other configurations may be applied. As shown in FIG. 2, the film forming unit 4a is provided with a target 6, which is attached to the upper surface of the inside of the chamber 1 as a sputtering source. The target 6 is a plate-shaped member including a material to be deposited on the workpiece W. The target 6 is disposed at a position facing the workpiece W when the workpiece W passes under the film forming unit 4a. The target 6 is connected to a direct current (DC) power source 7 that applies a direct current voltage to the target 6. Further, a sputtering gas introduction portion 8 that introduces a sputtering gas into the inside of the chamber 1 is provided in the vicinity of a portion of the upper surface of the chamber 1 where the target 6 is attached. As the sputtering gas, an inert gas such as argon gas can be used. Around the target 6, a partition wall 9 for reducing the outflow of the plasma is provided. In addition, the power supply can be applied to a well-known power source such as a DC pulse power source or a radio frequency (RF) power source.
將膜處理單元4e的構成例示於圖2～圖4（a）、圖4（b）。圖2是圖1的A-A剖面圖。圖3是圖1的B-B剖面圖。圖4（a）是將圖3的一部分簡化的示意圖，且表示膜處理單元4e的作用。圖4（b）是將膜處理單元4e簡化的平面圖，且表示膜處理單元4e的作用。The configuration of the film processing unit 4e is shown in Figs. 2 to 4(a) and 4(b). Fig. 2 is a cross-sectional view taken along line A-A of Fig. 1; Fig. 3 is a cross-sectional view taken along line B-B of Fig. 1; Fig. 4 (a) is a schematic view showing a part of Fig. 3 simplified, and shows the action of the film processing unit 4e. Fig. 4 (b) is a plan view showing the film processing unit 4e simplified, and shows the action of the film processing unit 4e.
膜處理單元4e具備設置於腔室1的內部的上表面且形成為筒狀的電極（以下，稱為“筒形電極”）10。筒形電極10為方筒狀，在一端具有開口部11，另一端被封閉。筒形電極10貫通設於腔室1的上表面的貫通孔，以開口部11側的端部位於腔室1的內部，封閉的端部位於腔室1的外部的方式配置。筒形電極10經由絕緣材料21而支撐於腔室1的貫通孔的周緣。筒形電極10的開口部11配置於與形成於旋轉台3上的搬送路徑P相向的位置。即，旋轉台3作為搬送部來搬送工件W並使其通過開口部11的正下方。而且，開口部11的正下方的位置成為工件W的通過位置。The film processing unit 4e includes an electrode (hereinafter referred to as a "tubular electrode") 10 that is formed in a cylindrical shape on the upper surface of the inside of the chamber 1. The cylindrical electrode 10 has a rectangular tubular shape and has an opening portion 11 at one end and a closed end at the other end. The cylindrical electrode 10 penetrates the through hole provided in the upper surface of the chamber 1, and the end portion on the opening portion 11 side is located inside the chamber 1, and the closed end portion is disposed outside the chamber 1. The cylindrical electrode 10 is supported by the periphery of the through hole of the chamber 1 via the insulating material 21 . The opening portion 11 of the cylindrical electrode 10 is disposed at a position facing the transport path P formed on the turntable 3. In other words, the turntable 3 transports the workpiece W as a transport portion and passes it directly under the opening portion 11. Further, the position directly below the opening portion 11 serves as a passing position of the workpiece W.
如圖4（b）所示，筒形電極10從上方來看為扇形，該扇形的直徑從旋轉台3的半徑方向r上的中心側朝向外側擴大。筒形電極10的開口部11也同樣為扇形。保持於旋轉台3上的工件W通過開口部11的下方的速度在旋轉台3的半徑方向r上越朝向中心側越慢，越朝向外側越快。因此，如果開口部11為簡單的長方形或正方形，則在半徑方向上的中心側與外側，工件W通過開口部11的正下方的時間產生差異。使開口部11的直徑從半徑方向r上的中心側朝向外側擴大，由此能夠使工件W通過開口部11的時間成為固定，從而能夠使後述的電漿處理均等地進行。但是，只要通過的時間差為在製品方面不會成為問題的程度，則也可以是長方形或正方形。As shown in FIG. 4(b), the cylindrical electrode 10 has a fan shape as viewed from above, and the diameter of the sector is enlarged from the center side in the radial direction r of the turntable 3 toward the outside. The opening portion 11 of the cylindrical electrode 10 is also fan-shaped. The speed at which the workpiece W held on the turntable 3 passes below the opening 11 is slower toward the center side in the radial direction r of the turntable 3, and becomes faster toward the outside. Therefore, if the opening portion 11 has a simple rectangular shape or a square shape, the time between the center side and the outer side in the radial direction and the workpiece W passing directly under the opening portion 11 is different. By expanding the diameter of the opening portion 11 from the center side in the radial direction r toward the outside, the time during which the workpiece W passes through the opening portion 11 can be fixed, and the plasma processing to be described later can be performed uniformly. However, as long as the time difference of passage is not a problem in terms of products, it may be a rectangle or a square.
如上所述，筒形電極10貫通腔室1的貫通孔，一部分露出至腔室1的外部。如圖3所示，該筒型電極10中的露出至腔室1的外部的部分被外部護罩（shield）12覆蓋。利用外部護罩12將腔室1的內部的空間保持為氣密。筒形電極10的位於腔室1的內部的部分的周圍被內部護罩13覆蓋。內部護罩13是與筒形電極10同軸的方筒狀，且支撐於腔室1的內部的上表面。內部護罩13的筒的各側面與筒形電極10的各側面大致平行地設置。內部護罩13的下端在高度方向上與筒形電極10的開口部11為相同位置，且在內部護罩13的下端，設有與旋轉台3的上表面平行地延伸的凸緣（flange）14。通過該凸緣14，抑制筒形電極10的內部產生的電漿流出至內部護罩13的外部。由旋轉台3搬送的工件W通過旋轉台3與凸緣14之間的間隙而搬入筒形電極10的開口部的正下方，再次通過旋轉台3與凸緣14之間的間隙而從筒形電極10的開口部的正下方搬出。As described above, the cylindrical electrode 10 penetrates the through hole of the chamber 1, and a part thereof is exposed to the outside of the chamber 1. As shown in FIG. 3, a portion of the cylindrical electrode 10 exposed to the outside of the chamber 1 is covered by an outer shield 12. The space inside the chamber 1 is kept airtight by the outer shroud 12. The periphery of the portion of the cylindrical electrode 10 located inside the chamber 1 is covered by the inner shroud 13. The inner shroud 13 is a rectangular tubular shape coaxial with the cylindrical electrode 10 and is supported on the upper surface of the interior of the chamber 1. Each side surface of the cylinder of the inner shroud 13 is provided substantially in parallel with each side surface of the cylindrical electrode 10. The lower end of the inner shroud 13 is at the same position as the opening portion 11 of the cylindrical electrode 10 in the height direction, and at the lower end of the inner shroud 13, a flange extending in parallel with the upper surface of the rotary table 3 is provided. 14. By the flange 14, the plasma generated inside the cylindrical electrode 10 is suppressed from flowing out to the outside of the inner shroud 13. The workpiece W conveyed by the turntable 3 is carried directly under the opening of the cylindrical electrode 10 through the gap between the turntable 3 and the flange 14, and passes through the gap between the turntable 3 and the flange 14 again from the cylindrical shape. The opening of the electrode 10 is carried out directly under the opening.
筒形電極10與用於施加高頻電壓的RF電源15連接。在RF電源15的輸出側串聯連接有匹配箱（matching box）（未圖示）。RF電源也連接於腔室1，筒形電極10為陰極（cathode），腔室1為陽極（anode）。另外，腔室1及旋轉台3接地。具有凸緣14的內部護罩13也接地。The cylindrical electrode 10 is connected to an RF power source 15 for applying a high-frequency voltage. A matching box (not shown) is connected in series to the output side of the RF power source 15. The RF power source is also connected to the chamber 1, the cylindrical electrode 10 is a cathode, and the chamber 1 is an anode. Further, the chamber 1 and the rotary table 3 are grounded. The inner shroud 13 with the flange 14 is also grounded.
另外，筒形電極10與製程氣體導入部16連接，經由製程氣體導入部16從外部的製程氣體供給源向筒形電極10的內部導入製程氣體。製程氣體可以根據膜處理的目的而適當變更。例如，當進行蝕刻時，可以使用氬氣等惰性氣體作為蝕刻氣體。當進行氧化處理時，可以使用氧氣。當進行氮化處理時，可以使用氮氣。RF電源15及製程氣體導入部16均經由設於外部護罩12的貫通孔而連接於筒形電極10。Further, the cylindrical electrode 10 is connected to the process gas introduction portion 16, and the process gas is introduced into the cylindrical electrode 10 from the external process gas supply source via the process gas introduction portion 16. The process gas can be appropriately changed depending on the purpose of the film treatment. For example, when etching is performed, an inert gas such as argon gas may be used as the etching gas. When the oxidation treatment is performed, oxygen can be used. When nitriding treatment is performed, nitrogen gas can be used. Both the RF power source 15 and the process gas introduction portion 16 are connected to the cylindrical electrode 10 via a through hole provided in the outer shroud 12.
此外，在旋轉台3的下方，設置有磁性構件17。磁性構件17載置於安裝在腔室1的底面的支撐台18上，且配置於隔著旋轉台3而與筒形電極10的開口部11相向的位置。如圖4（a）、圖4（b）所示，磁性構件17可以由包含第一磁鐵17a與第二磁鐵17b的一對棒狀的永久磁鐵構成。第一磁鐵17a與第二磁鐵17b是隔開規定的間隔而以彼此不同的極性的部分相向的方式配置。所謂“以彼此不同的極性的部分相向的方式配置”，是指以第一磁鐵17a的N極側與第二磁鐵17b的S極側相向的方式，且以第一磁鐵17a的S極側與第二磁鐵17b的N極側相向的方式配置。而且，第一磁鐵17a與第二磁鐵17b分別以與旋轉台3的旋轉方向正交的方式配置。Further, a magnetic member 17 is provided below the turntable 3. The magnetic member 17 is placed on the support table 18 attached to the bottom surface of the chamber 1, and is disposed at a position facing the opening portion 11 of the cylindrical electrode 10 via the turntable 3. As shown in FIGS. 4(a) and 4(b), the magnetic member 17 may be composed of a pair of rod-shaped permanent magnets including a first magnet 17a and a second magnet 17b. The first magnet 17a and the second magnet 17b are disposed so as to face each other with a different polarity from each other at a predetermined interval. The phrase "disposed in a portion in which the polarities are different from each other" means that the N pole side of the first magnet 17a faces the S pole side of the second magnet 17b, and the S pole side of the first magnet 17a is The N pole sides of the second magnet 17b are arranged to face each other. Further, the first magnet 17a and the second magnet 17b are disposed to be orthogonal to the rotation direction of the turntable 3, respectively.
藉由將第一磁鐵17a與第二磁鐵17b隔開規定的間隔而以使不同的極性的部分相向的方式配置，在第一磁鐵17a與第二磁鐵17b之間產生磁場B。如圖4（a）所示，該磁場B包含如下的磁力線，該磁力線沿上下通過旋轉台3而形成為從第一磁鐵17a朝向第二磁鐵17b的圓弧形狀。此外，該磁場B在筒形電極10的開口部11的附近，包含與旋轉台3平行或大致平行的磁力線。如圖4（b）所示，將第一磁鐵17a與第二磁鐵17b以與旋轉台3的旋轉方向正交的方式配置，因此，磁場B與形成於旋轉台3的工件W的搬送方向平行。第一磁鐵17a與第二磁鐵17b的間隔可以考慮磁鐵的磁力，以形成於兩個磁鐵之間的磁場能獲得足以捕捉後述的電漿的電子的磁力的方式適當決定。圖4（b）中，使第一磁鐵17a與第二磁鐵17b隔開相當於開口部11的周向寬度的間隔而相向，但也可以如圖5的變形例所示，設置比開口部11的周向寬度更窄的間隔而相向。即便使用廉價且磁力弱的磁鐵，藉由使彼此的距離靠近，也易於捕捉電漿的電子。The magnetic field B is generated between the first magnet 17a and the second magnet 17b by arranging the first magnet 17a and the second magnet 17b at a predetermined interval so that portions having different polarities face each other. As shown in FIG. 4(a), the magnetic field B includes magnetic lines of force which are formed in an arc shape from the first magnet 17a toward the second magnet 17b by passing through the turntable 3 up and down. Further, the magnetic field B includes magnetic lines of force parallel or substantially parallel to the turntable 3 in the vicinity of the opening 11 of the cylindrical electrode 10. As shown in FIG. 4(b), since the first magnet 17a and the second magnet 17b are arranged to be orthogonal to the rotation direction of the turntable 3, the magnetic field B is parallel to the conveyance direction of the workpiece W formed on the turntable 3. . The distance between the first magnet 17a and the second magnet 17b can be appropriately determined in such a manner that the magnetic field formed between the two magnets can obtain a magnetic force sufficient to capture electrons of a plasma to be described later. In FIG. 4(b), the first magnet 17a and the second magnet 17b are opposed to each other with an interval corresponding to the circumferential width of the opening 11, but the opening portion 11 may be provided as shown in the modification of FIG. The circumferential width is opposite to each other with a narrower spacing. Even if a magnet that is inexpensive and has a weak magnetic force is used, it is easy to capture electrons of the plasma by bringing the distances closer to each other.
另外，第一磁鐵17a與第二磁鐵17b的磁力、配置間隔、與旋轉台3的隔開距離優選在工件W上的磁通密度成為200高斯（Gauss）以上的條件下進行設定。Further, it is preferable that the magnetic force of the first magnet 17a and the second magnet 17b, the arrangement interval, and the distance from the turntable 3 are set under the condition that the magnetic flux density on the workpiece W is 200 Gauss or more.
電漿處理裝置還具備控制部20。控制部20包含可編程邏輯控制器（Programmable Logic Controller，PLC）或中央處理器（Central Processing Unit，CPU）等運算處理裝置。控制部20進行關於濺射氣體及製程氣體向腔室1內的導入及排氣的控制、DC電源7及RF電源15的控制、以及旋轉台3的旋轉速度的控制等控制。The plasma processing apparatus further includes a control unit 20. The control unit 20 includes an arithmetic processing unit such as a programmable logic controller (PLC) or a central processing unit (CPU). The control unit 20 performs control such as control of introduction and exhaust of the sputtering gas and the process gas into the chamber 1, control of the DC power source 7 and the RF power source 15, and control of the rotational speed of the rotary table 3.
[作用] 對本實施方式的電漿處理裝置的作用進行說明。從裝載鎖定室將未處理的工件W搬入腔室1內。搬入的工件W由旋轉台3的保持部3a保持。腔室1的內部利用排氣部2排氣而成為所需的真空狀態。對旋轉台3進行驅動，由此沿搬送路徑P搬送工件W使其通過各處理單元4a～處理單元4g的下方。[Action] The action of the plasma processing apparatus of the present embodiment will be described. The unprocessed workpiece W is carried into the chamber 1 from the load lock chamber. The workpiece W that is carried in is held by the holding portion 3a of the turntable 3. The inside of the chamber 1 is exhausted by the exhaust unit 2 to be in a desired vacuum state. When the turntable 3 is driven, the workpiece W is transported along the transport path P to pass under the respective processing units 4a to 4g.
成膜單元4a中，從濺射氣體導入部8導入濺射氣體，且從DC電源7對濺射源施加直流電壓。藉由直流電壓的施加使濺射氣體電漿化，而產生離子。如果產生的離子碰撞靶材6，則靶材6的材料飛出。飛出的材料堆積於通過成膜單元4a的下方的工件W上，由此，在工件W上形成薄膜。其他成膜單元4b、成膜單元4c、成膜單元4d、成膜單元4f、成膜單元4g也以同樣的方法進行成膜。但是，不一定需要利用所有成膜單元進行成膜。In the film forming unit 4a, a sputtering gas is introduced from the sputtering gas introduction unit 8, and a DC voltage is applied from the DC power source 7 to the sputtering source. The sputtering gas is plasmad by the application of a direct current voltage to generate ions. If the generated ions collide with the target 6, the material of the target 6 flies out. The flying material is deposited on the workpiece W passing under the film forming unit 4a, whereby a film is formed on the workpiece W. The other film forming unit 4b, the film forming unit 4c, the film forming unit 4d, the film forming unit 4f, and the film forming unit 4g are also formed in the same manner. However, it is not always necessary to use all of the film forming units for film formation.
利用成膜單元4a～成膜單元4d進行成膜後的工件W繼續在搬送路徑P上由旋轉台3搬送，在膜處理單元4e中，通過筒形電極10的開口部11的正下方的位置，即膜處理位置。如上所述，本實施方式中，對在膜處理單元4e中進行蝕刻的示例進行說明。膜處理單元4e中，從製程氣體導入部16向筒形電極10內導入蝕刻氣體，且從RF電源15對筒形電極10施加高頻電壓。藉由高頻電壓的施加使蝕刻氣體電漿化，而產生離子。產生的離子碰撞通過筒形電極10的開口部11的下方的工件W上的薄膜，由此，對薄膜進行蝕刻。另外，筒形電極10的內部的電漿在旋轉台3的半徑方向r上擴散。The workpiece W formed by the film forming unit 4a to the film forming unit 4d is continuously transported by the turntable 3 on the transport path P, and passes through the position directly below the opening 11 of the cylindrical electrode 10 in the film processing unit 4e. , that is, the film processing position. As described above, in the present embodiment, an example in which etching is performed in the film processing unit 4e will be described. In the membrane processing unit 4e, an etching gas is introduced into the cylindrical electrode 10 from the process gas introduction unit 16, and a high-frequency voltage is applied from the RF power source 15 to the cylindrical electrode 10. The etching gas is plasmad by the application of a high-frequency voltage to generate ions. The generated ions collide with the thin film on the workpiece W below the opening portion 11 of the cylindrical electrode 10, whereby the thin film is etched. Further, the plasma inside the cylindrical electrode 10 is diffused in the radial direction r of the turntable 3.
如圖3所示，在開口部11的正下方，以與旋轉方向正交的方式配置有第一磁鐵17a及第二磁鐵17b。在第一磁鐵17a與第二磁鐵17b之間產生磁場B。該磁場B包含如下的磁力線，該磁力線從第一磁鐵17a產生，通過旋轉台3及工件W而到達工件W上方的開口部11的附近，再次通過工件W及旋轉台3而到達第二磁鐵17b。換言之，磁場B包含以跨越工件的方式形成的磁力線。藉由如上所述般在開口部11的附近，換言之在開口部11與工件之間形成磁場，筒形電極10的內部的電漿被磁場B捕捉，從而工件W附近的電漿密度變高。離子變得容易碰撞保持於旋轉台3上的工件W的膜。此外，磁場B包含與工件W的搬送方向平行的磁力線。因為該磁力線在筒形電極10的內部沿半徑方向r擴散，所以形成半徑方向的磁場的隧道。電漿被該磁場的隧道捕捉，由此，電漿容易沿半徑方向r擴散，從而離子碰撞通過開口部11的正下方的工件W的整體。As shown in FIG. 3, the first magnet 17a and the second magnet 17b are disposed directly below the opening 11 so as to be orthogonal to the rotation direction. A magnetic field B is generated between the first magnet 17a and the second magnet 17b. The magnetic field B includes magnetic lines of force which are generated from the first magnet 17a, reach the vicinity of the opening 11 above the workpiece W by the turntable 3 and the workpiece W, and pass through the workpiece W and the turntable 3 again to reach the second magnet 17b. . In other words, the magnetic field B contains magnetic lines of force that are formed across the workpiece. As described above, in the vicinity of the opening portion 11, in other words, a magnetic field is formed between the opening portion 11 and the workpiece, the plasma inside the cylindrical electrode 10 is captured by the magnetic field B, and the plasma density in the vicinity of the workpiece W becomes high. The ions easily collide with the film of the workpiece W held on the turntable 3. Further, the magnetic field B includes magnetic lines of force parallel to the conveying direction of the workpiece W. Since the magnetic lines of force diffuse in the radial direction r inside the cylindrical electrode 10, a tunnel of a magnetic field in the radial direction is formed. The plasma is trapped by the tunnel of the magnetic field, whereby the plasma is easily diffused in the radial direction r, and the ions collide with the entirety of the workpiece W directly below the opening 11.
利用膜處理單元4e進行膜處理後的工件W繼而在成膜單元4f、成膜單元4g中進行成膜，而形成薄膜。這種處理藉由旋轉台3的旋轉而重複進行，將形成有所需薄膜的工件W從裝載鎖定部5搬出至腔室1外。The workpiece W subjected to the film treatment by the membrane processing unit 4e is then formed into a film in the film forming unit 4f and the film forming unit 4g to form a film. This processing is repeated by the rotation of the rotary table 3, and the workpiece W on which the desired film is formed is carried out from the load lock portion 5 to the outside of the chamber 1.
[效果] 如上所述，本實施方式的電漿處理裝置具備筒形電極10，該筒形電極10在一端設有開口部11，且內部被導入製程氣體。筒形電極10與施加電壓的RF電源15連接。電漿處理裝置具備旋轉台3作為搬送部，旋轉台3搬送工件W使其通過筒形電極10的開口部11的正下方。電漿處理裝置還具備磁性構件17，該磁性構件17在開口部11的附近，形成包含與工件W大致平行的磁力線的磁場B。[Effects] As described above, the plasma processing apparatus of the present embodiment includes the cylindrical electrode 10 having the opening portion 11 at one end and the process gas introduced therein. The cylindrical electrode 10 is connected to an RF power source 15 to which a voltage is applied. The plasma processing apparatus includes a rotating table 3 as a conveying unit, and the rotating table 3 conveys the workpiece W directly below the opening 11 of the cylindrical electrode 10. The plasma processing apparatus further includes a magnetic member 17 that forms a magnetic field B including magnetic lines of force substantially parallel to the workpiece W in the vicinity of the opening 11.
形成於開口部11的附近的磁場B捕捉產生於筒形電極10的內部的電漿的電子，因此，產生電漿的封閉效應，能夠減少向筒形電極10外洩漏的電漿。由此，能夠抑制自偏壓的反轉，而穩定地進行膜處理。另外，在保持於旋轉台3的工件W的附近，電漿密度變高，因此，電漿容易碰撞工件W上的膜，能夠使蝕刻速率提高。此外，磁場B包含與工件W的搬送方向平行的磁力線。由此，在筒形電極10的內部的半徑方向r上形成磁場的隧道。電漿被該隧道捕捉，由此，由該隧道引導而沿半徑方向r擴散，因此能夠使離子碰撞工件W的整體。結果為，能夠使電漿處理裝置的蝕刻速率或化合物生成速率提高，且能夠使蝕刻精度提高。不僅是蝕刻，而且在進行氧化處理或氮化處理的情況下，也可以獲得同樣的效果。The magnetic field B formed in the vicinity of the opening portion 11 captures electrons of the plasma generated inside the cylindrical electrode 10, and therefore, a blocking effect of the plasma is generated, and plasma leaking to the outside of the cylindrical electrode 10 can be reduced. Thereby, the inversion of the self-bias can be suppressed, and the film processing can be performed stably. Further, since the plasma density is increased in the vicinity of the workpiece W held by the turntable 3, the plasma easily collides with the film on the workpiece W, and the etching rate can be improved. Further, the magnetic field B includes magnetic lines of force parallel to the conveying direction of the workpiece W. Thereby, a tunnel of a magnetic field is formed in the radial direction r inside the cylindrical electrode 10. The plasma is trapped by the tunnel, and is guided by the tunnel to diffuse in the radial direction r, so that ions can collide with the entire workpiece W. As a result, the etching rate or the compound formation rate of the plasma processing apparatus can be improved, and the etching precision can be improved. The same effect can be obtained not only in etching but also in the case of performing oxidation treatment or nitriding treatment.
磁性構件17是以彼此的極性不同的部分相向的方式配置的一對磁鐵即第一磁鐵17a與第二磁鐵17b。第一磁鐵17a與第二磁鐵17b設置於開口部11的正下方且在工件W的通過位置的下方。磁場B以跨越通過膜處理位置的工件W的方式形成。藉由如上所述般形成磁場B，電漿密集於開口部11的周向中部附近，而能夠抑制電漿的擴散。而且，磁場B包含與工件W大致平行的磁力線，該磁力線形成於靠近工件的位置，因此，能夠在工件W的附近獲得高電漿密度。The magnetic member 17 is a pair of magnets, that is, a first magnet 17a and a second magnet 17b, which are disposed such that portions having different polarities face each other. The first magnet 17a and the second magnet 17b are disposed directly below the opening 11 and below the passing position of the workpiece W. The magnetic field B is formed in such a manner as to span the workpiece W passing through the film processing position. By forming the magnetic field B as described above, the plasma is densely in the vicinity of the circumferential middle portion of the opening portion 11, and the diffusion of the plasma can be suppressed. Further, the magnetic field B includes magnetic lines of force substantially parallel to the workpiece W, and the magnetic lines of force are formed at positions close to the workpiece, and therefore, a high plasma density can be obtained in the vicinity of the workpiece W.
磁性構件17具體而言設置於旋轉台3的下方。例如，當在現有的電漿處理裝置中組入磁性構件17時，無需對膜處理單元4e的構成施加變更，從而易於安裝。The magnetic member 17 is specifically provided below the turntable 3. For example, when the magnetic member 17 is incorporated in the conventional plasma processing apparatus, it is not necessary to change the configuration of the film processing unit 4e, and it is easy to mount.
[第二實施方式] 接下來，參照圖6及圖7（a）、圖7（b）對第二實施方式進行說明。另外，對於與第一實施方式的構成要素相同的構成要素，附上相同的符號並省略詳細的說明。[Second Embodiment] Next, a second embodiment will be described with reference to Figs. 6 and 7(a) and 7(b). The same components as those of the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
第二實施方式中，如圖6所示，將磁性構件17設置於筒形電極10的側面的附近。具體而言，將磁性構件17安裝於覆蓋筒形電極10的內部護罩13的側面。更具體而言，第一磁鐵17a及第二磁鐵17b與內部護罩13的在搬送方向上相向的側面接觸，且以支撐於腔室1的內部的上表面及內部護罩13的凸緣14的方式安裝。In the second embodiment, as shown in FIG. 6, the magnetic member 17 is provided in the vicinity of the side surface of the cylindrical electrode 10. Specifically, the magnetic member 17 is attached to the side surface of the inner shroud 13 that covers the cylindrical electrode 10. More specifically, the first magnet 17a and the second magnet 17b are in contact with the side faces of the inner shroud 13 facing in the transport direction, and are supported by the upper surface of the interior of the chamber 1 and the flange 14 of the inner shroud 13. The way to install.
由此，第一磁鐵17a及第二磁鐵17b在筒形電極10的開口部11的附近，成為隔開相當於開口部11的寬度的間隔而相向的狀態。而且，第一磁鐵17a及第二磁鐵17b以與旋轉台3的旋轉方向正交的方式配置。第一磁鐵17a及第二磁鐵17b與第一實施方式同樣地，以彼此不同的極性的部分相向的方式配置。Thereby, the first magnet 17a and the second magnet 17b are in a state of being opposed to each other in the vicinity of the opening 11 of the cylindrical electrode 10 with an interval corresponding to the width of the opening 11. Further, the first magnet 17a and the second magnet 17b are disposed to be orthogonal to the rotation direction of the turntable 3. Similarly to the first embodiment, the first magnet 17a and the second magnet 17b are disposed such that portions having different polarities face each other.
如圖7（a）、圖7（b）所示，在安裝於內部護罩13的側面的第一磁鐵17a與第二磁鐵17b之間產生磁場B。磁場B在筒形電極10的開口部11的附近包含與旋轉台3大致平行的磁力線。因為將第一磁鐵17a與第二磁鐵17b以與旋轉台3的旋轉方向正交的方式配置，所以磁場B與形成於旋轉台3的工件W的搬送方向平行。As shown in FIGS. 7(a) and 7(b), a magnetic field B is generated between the first magnet 17a and the second magnet 17b attached to the side surface of the inner shroud 13. The magnetic field B includes magnetic lines of force substantially parallel to the turntable 3 in the vicinity of the opening 11 of the cylindrical electrode 10. Since the first magnet 17a and the second magnet 17b are arranged to be orthogonal to the rotation direction of the turntable 3, the magnetic field B is parallel to the conveyance direction of the workpiece W formed on the turntable 3.
與第一實施方式同樣地，該磁力線捕捉產生於筒形電極10的內部的電漿中的電子，因此，產生封閉效應，能夠減少向筒形電極10外洩漏的電漿。由此，能夠抑制自偏壓的反轉，而穩定地進行膜處理。而且，旋轉台3附近的電漿密度變高，因此，能夠使蝕刻速率提高。Similarly to the first embodiment, the magnetic lines of force capture electrons generated in the plasma generated inside the cylindrical electrode 10, and therefore, a sealing effect is generated, and plasma leaking to the outside of the cylindrical electrode 10 can be reduced. Thereby, the inversion of the self-bias can be suppressed, and the film processing can be performed stably. Further, since the plasma density in the vicinity of the turntable 3 is increased, the etching rate can be improved.
[其他實施方式] 本發明並不限定於所述實施方式。例如，所述實施方式中，關於膜處理是進行蝕刻，但也可以進行氧化處理或氮化處理。在氧化處理的情況下，可向膜處理單元4e導入氧氣，在氮化處理的情況下，可向膜處理單元4e導入氮氣。[Other Embodiments] The present invention is not limited to the embodiments described above. For example, in the above embodiment, the film treatment is performed, but the oxidation treatment or the nitridation treatment may be performed. In the case of the oxidation treatment, oxygen can be introduced into the membrane treatment unit 4e, and in the case of the nitridation treatment, nitrogen can be introduced into the membrane treatment unit 4e.
所述實施方式中，使用旋轉台3作為電漿處理裝置的搬送部，但並不限於此。只要是搬送工件W且能夠依次向處理單元進行搬送者，便可以用作搬送部。例如，也可以利用旋轉圓筒（drum）構成搬送部，將各處理單元配置於圓筒的周向。In the above embodiment, the turntable 3 is used as the transport portion of the plasma processing apparatus, but is not limited thereto. As long as the workpiece W is transported and can be transported to the processing unit in sequence, it can be used as a transport unit. For example, the transfer unit may be configured by a rotating cylinder, and each processing unit may be disposed in the circumferential direction of the cylinder.
所述實施方式中，在膜處理單元4e中，將筒形電極10以貫通腔室1的上表面的方式設置，且利用外部護罩12及內部護罩13覆蓋筒形電極10的周圍，但並不限於此。例如，也可以如圖8所示，將筒形電極10經由絕緣材料21而載置於腔室1的上表面，且將筒形電極10的開口部11與腔室1的貫通孔連接。在該構造中，因為筒形電極10將腔室1的內部密封，所以能夠省略外部護罩12。而且，腔室1的內部的上表面發揮與內部護罩13的凸緣14相同的作用，因此，也能夠省略內部護罩13。雖然電子會碰撞從筒形電極10的開口部11向外部洩漏的製程氣體而進行電離，但因為使該電子在開口部11的附近向地面（ground）流動，所以結果為電離效應薄弱，因此，能夠抑制電漿的擴散。但是，如果開口部11與工件W的間隔寬，則在與腔室1的壁面遠離的部位會引起電離，導致電漿擴散，因此，優選使旋轉台3與腔室1的上表面的距離短，而抑制電漿向筒形電極10外部洩漏擴散。In the above-described embodiment, in the film processing unit 4e, the cylindrical electrode 10 is provided so as to penetrate the upper surface of the chamber 1, and the outer periphery of the cylindrical electrode 10 is covered by the outer shroud 12 and the inner shroud 13, but Not limited to this. For example, as shown in FIG. 8, the cylindrical electrode 10 may be placed on the upper surface of the chamber 1 via the insulating material 21, and the opening 11 of the cylindrical electrode 10 may be connected to the through hole of the chamber 1. In this configuration, since the cylindrical electrode 10 seals the inside of the chamber 1, the outer shroud 12 can be omitted. Further, since the upper surface of the inside of the chamber 1 functions in the same manner as the flange 14 of the inner shroud 13, the inner shroud 13 can be omitted. Although the electrons collide with the process gas leaking from the opening portion 11 of the cylindrical electrode 10 to the outside, the electrons are ionized in the vicinity of the opening portion 11, and as a result, the ionization effect is weak. It can suppress the diffusion of plasma. However, if the interval between the opening portion 11 and the workpiece W is wide, ionization is caused at a portion away from the wall surface of the chamber 1 to cause plasma diffusion, and therefore, it is preferable to make the distance between the rotary table 3 and the upper surface of the chamber 1 short. While suppressing leakage of plasma to the outside of the cylindrical electrode 10.
另外，收容搬送部及各處理單元的腔室1的形狀或處理單元的種類及配置形態也並不限於特定者，可以根據工件W的種類或設置環境而適當變更。In addition, the shape of the chamber 1 for accommodating the transport unit and each processing unit, and the type and arrangement of the processing unit are not limited to those specific, and may be appropriately changed depending on the type of the workpiece W or the installation environment.
所述實施方式中，使用一對棒磁鐵作為磁性構件17，但並不限於此。只要能夠形成包含與旋轉台3平行的磁力線的磁場B，則可以使用其他形狀的磁性構件。而且，也可以代替永久磁鐵而使用在鐵芯的周圍捲繞有線圈（coil）的電磁鐵等。In the above embodiment, a pair of rod magnets are used as the magnetic member 17, but it is not limited thereto. As long as the magnetic field B including magnetic lines of force parallel to the turntable 3 can be formed, magnetic members of other shapes can be used. Further, instead of the permanent magnet, an electromagnet or the like in which a coil is wound around the iron core may be used.
1‧‧‧腔室
2‧‧‧排氣部
3‧‧‧旋轉台
3a‧‧‧保持部
4a、4b、4c、4d、4f、4g‧‧‧處理單元（成膜單元）
4e‧‧‧處理單元（膜處理單元）
5‧‧‧裝載鎖定部
6‧‧‧靶材
7‧‧‧DC電源
8‧‧‧濺射氣體導入部
9‧‧‧隔離壁
10‧‧‧筒形電極
11‧‧‧開口部
12‧‧‧外部護罩
13‧‧‧內部護罩
14‧‧‧凸緣
15‧‧‧RF電源
16‧‧‧製程氣體導入部
17‧‧‧磁性構件
17a‧‧‧第一磁鐵
17b‧‧‧第二磁鐵
18‧‧‧支撐台
20‧‧‧控制部
21‧‧‧絕緣材料
B‧‧‧磁場
P‧‧‧搬送路徑
r‧‧‧半徑方向
W‧‧‧工件1‧‧‧ chamber
2‧‧‧Exhaust Department
3‧‧‧Rotating table
3a‧‧‧ Keeping Department
4a, 4b, 4c, 4d, 4f, 4g‧‧‧ processing unit (film forming unit)
4e‧‧‧Processing unit (membrane processing unit)
5‧‧‧Load lock
6‧‧‧ Target
7‧‧‧DC power supply
8‧‧‧Sputter gas introduction
9‧‧‧ partition wall
10‧‧‧Cylinder electrode
11‧‧‧ openings
12‧‧‧External shield
13‧‧‧Interior shield
14‧‧‧Flange
15‧‧‧RF power supply
16‧‧‧Process gas introduction
17‧‧‧ Magnetic components
17a‧‧‧First magnet
17b‧‧‧second magnet
18‧‧‧Support table
20‧‧‧Control Department
21‧‧‧Insulation materials
B‧‧‧ Magnetic field
P‧‧‧Transportation path
R‧‧‧ Radial direction
W‧‧‧Workpiece
圖1是示意性表示本發明的第一實施方式的電漿處理裝置的構成的平面圖。 圖2是圖1的A-A剖面圖。 圖3是圖1的B-B剖面圖。 圖4（a）是將圖3簡化且示意性地表示筒形電極內產生的電漿與利用磁性構件而形成的磁場的圖。圖4（b）是膜處理單元的經簡化的平面圖，且是示意性地表示筒形電極內產生的電漿與利用磁性構件而形成的磁場的圖。 圖5是表示本發明的第一實施方式的變形例的膜處理單元的經簡化的平面圖。 圖6是本發明的第二實施方式的電漿處理裝置的概略構成圖。 圖7（a）是將圖6簡化且示意性地表示筒形電極內產生的電漿與利用磁性構件而形成的磁場的圖。圖7（b）是膜處理單元的經簡化的平面圖，且是示意性地表示筒形電極內產生的電漿與利用磁性構件而形成的磁場的圖。 圖8是表示本發明的其他實施方式的膜處理單元的構成的剖面圖。FIG. 1 is a plan view schematically showing a configuration of a plasma processing apparatus according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line A-A of Fig. 1; Fig. 3 is a cross-sectional view taken along line B-B of Fig. 1; Fig. 4(a) is a view schematically showing Fig. 3 schematically and schematically showing a plasma generated in a cylindrical electrode and a magnetic field formed by a magnetic member. 4(b) is a simplified plan view of the film processing unit, and is a view schematically showing a plasma generated in the cylindrical electrode and a magnetic field formed by the magnetic member. Fig. 5 is a simplified plan view showing a film processing unit according to a modification of the first embodiment of the present invention. Fig. 6 is a schematic configuration diagram of a plasma processing apparatus according to a second embodiment of the present invention. Fig. 7(a) is a view schematically showing Fig. 6 and schematically showing a plasma generated in a cylindrical electrode and a magnetic field formed by a magnetic member. Fig. 7 (b) is a simplified plan view of the film processing unit, and is a view schematically showing a plasma generated in the cylindrical electrode and a magnetic field formed by the magnetic member. 8 is a cross-sectional view showing the configuration of a film processing unit according to another embodiment of the present invention.
1‧‧‧腔室 1‧‧‧ chamber
3‧‧‧旋轉台 3‧‧‧Rotating table
4e‧‧‧處理單元(膜處理單元) 4e‧‧‧Processing unit (membrane processing unit)
10‧‧‧筒形電極 10‧‧‧Cylinder electrode
11‧‧‧開口部 11‧‧‧ openings
12‧‧‧外部護罩 12‧‧‧External shield
13‧‧‧內部護罩 13‧‧‧Interior shield
14‧‧‧凸緣 14‧‧‧Flange
15‧‧‧RF電源 15‧‧‧RF power supply
16‧‧‧製程氣體導入部 16‧‧‧Process gas introduction
17‧‧‧磁性構件 17‧‧‧ Magnetic components
17a‧‧‧第一磁鐵 17a‧‧‧First magnet
17b‧‧‧第二磁鐵 17b‧‧‧second magnet
18‧‧‧支撐台 18‧‧‧Support table
21‧‧‧絕緣材料 21‧‧‧Insulation materials
P‧‧‧搬送路徑 P‧‧‧Transportation path
W‧‧‧工件 W‧‧‧Workpiece
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| WO2008041702A1 (en) * | 2006-10-03 | 2008-04-10 | Panasonic Corporation | Plasma doping method and apparatus |
| JP5059429B2 (en) * | 2007-01-26 | 2012-10-24 | 株式会社大阪真空機器製作所 | Sputtering method and sputtering apparatus |
| KR101147484B1 (en) * | 2007-01-26 | 2012-05-22 | 가부시끼가이샤 오오사까 신꾸우기끼 세이사꾸쇼 | Sputter method and sputter device |
| JP5477868B2 (en) | 2011-02-22 | 2014-04-23 | 株式会社日本製鋼所 | Magnetron type sputtering equipment |
| JP2014049667A (en) * | 2012-09-03 | 2014-03-17 | Tokyo Electron Ltd | Plasma processing apparatus, and substrate processing apparatus provided with the same |
| JP5971144B2 (en) * | 2013-02-06 | 2016-08-17 | 東京エレクトロン株式会社 | Substrate processing apparatus and film forming method |
| JP2016072088A (en) * | 2014-09-30 | 2016-05-09 | 芝浦メカトロニクス株式会社 | Plasma processing apparatus |
-
2015
- 2015-09-01 JP JP2015171702A patent/JP6329110B2/en active Active
- 2015-09-22 TW TW106113326A patent/TWI671785B/en active
- 2015-09-22 TW TW104131200A patent/TWI598928B/en active
- 2015-09-25 KR KR1020150136491A patent/KR102464047B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TWI598928B (en) | 2017-09-11 |
| TWI671785B (en) | 2019-09-11 |
| TW201612944A (en) | 2016-04-01 |
| JP6329110B2 (en) | 2018-05-23 |
| KR102464047B1 (en) | 2022-11-04 |
| KR20160038808A (en) | 2016-04-07 |
| JP2016072237A (en) | 2016-05-09 |
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