JP2011193012A - Device for plasma treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of easily controlling and setting the appropriate state of a multi-pole magnetic field depending on types of processes of plasma treatment to perform desired treatment easily. <P>SOLUTION: A magnetic-field forming mechanism is constituted of an upper magnetic-field forming mechanism 22a and a lower magnetic-field forming mechanism 22b both of which are provided separately and vertically, and the upper magnetic-field forming mechanism and the lower magnetic-field forming mechanism are constituted so as to be vertically movable to approximate and separate from each other. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus that performs plasma processing such as etching on a substrate to be processed such as a semiconductor wafer.

  Conventionally, in the field of manufacturing semiconductor devices, plasma is generated in a processing chamber, and this plasma is applied to a substrate to be processed, such as a semiconductor wafer, disposed in the processing chamber to perform predetermined processing such as etching or film formation. A plasma processing apparatus that performs the above is used.

  In such a plasma processing apparatus, in order to perform good processing, it is necessary to maintain the plasma state in a favorable state suitable for plasma processing. For this reason, conventionally, there are many plasma processing apparatuses equipped with a magnetic field forming mechanism for forming a magnetic field for controlling plasma.

  As the magnetic field forming mechanism, a dipole type that forms a dipole magnetic field in a certain direction on a substrate to be processed such as a semiconductor wafer disposed horizontally with a surface to be processed facing upward, and a target to be processed A plurality of N and S magnetic poles are alternately arranged adjacent to a substrate to be processed such as a semiconductor wafer disposed horizontally with its surface facing upward so as to surround the semiconductor wafer or the like. A multipole type is known in which a magnetic field is not formed above a semiconductor wafer and a multipole magnetic field is formed so as to surround the periphery of the semiconductor wafer.

  As described above, conventionally, a predetermined multipole magnetic field is formed around a substrate to be processed such as a semiconductor wafer in a processing chamber, and plasma processing such as etching is performed while controlling the state of the plasma by the multipole magnetic field. Plasma processing apparatuses to perform are known.

  However, as a result of detailed investigations by the present inventors, in plasma processing, for example, plasma etching, the etching rate is more uniform in the plane when the multi-pole magnetic field is formed as described above. In contrast, the plasma etching process without a multipole magnetic field improves the in-plane uniformity of the etching rate rather than the plasma etching process with a multipole magnetic field formed. It turns out that there is a process to do.

  For example, when etching a silicon oxide film or the like, in-plane etching of the semiconductor wafer is performed by forming a multipole magnetic field compared to etching without forming a multipole magnetic field. The uniformity of the rate (etching rate) can be improved, and when etching is performed without forming a multipole magnetic field, the etching rate increases at the center of the semiconductor wafer and the etching rate at the periphery of the semiconductor wafer. As a result, the etching rate becomes non-uniform.

  On the other hand, when etching an organic low dielectric constant film (so-called Low-K) or the like, etching is performed without forming a multipole magnetic field, and etching is performed with a multipole magnetic field formed. The etching rate uniformity in the surface of the semiconductor wafer can be improved as compared with the above. When etching is performed by forming a multipole magnetic field, the etching rate is lowered at the center of the semiconductor wafer, An etching rate non-uniformity occurs in which the etching rate is increased at the peripheral portion.

  Here, if the magnetic field forming mechanism described above is composed of an electromagnet, the control of the formation and extinction of the magnetic field can be easily performed, but the use of the electromagnet increases the power consumption. Therefore, in many apparatuses, permanent magnets are used as described above.

  For this reason, there has been a problem that the control of the formation and extinction of the magnetic field has to be performed easily, such as attaching and detaching the magnetic field forming means.

  The present invention has been made in response to such a conventional situation, and can easily control and set the state of an appropriate multipole magnetic field according to the type of the plasma processing process, and can easily perform good processing. It is an object of the present invention to provide a plasma processing apparatus that can perform such a process.

  One aspect of the plasma processing apparatus of the present invention includes a processing chamber that accommodates a substrate to be processed, a mechanism that is provided in the processing chamber and generates plasma for performing predetermined plasma processing on the substrate to be processed, and a permanent magnet A plasma processing apparatus including a magnetic field forming mechanism configured to form a predetermined multipole magnetic field around the substrate to be processed in the processing chamber. The magnetic field forming mechanism is composed of an upper magnetic field forming mechanism and a lower magnetic field forming mechanism that are provided separately in a vertical direction, and the upper magnetic field forming mechanism and the lower magnetic field forming mechanism are close to each other and separated from each other. It is configured to be movable in the vertical direction.

  Another aspect of the plasma processing apparatus of the present invention includes a processing chamber that accommodates a substrate to be processed, a mechanism that is provided in the processing chamber and that generates plasma for performing predetermined plasma processing on the substrate to be processed, A plasma processing apparatus comprising a magnetic field forming mechanism configured by arranging a plurality of magnet segments composed of magnets and provided outside the processing chamber and forming a predetermined multipole magnetic field around the substrate to be processed in the processing chamber The magnetic field forming mechanism is composed of an upper magnetic field forming mechanism and a lower magnetic field forming mechanism provided separately in an upper and lower direction, the magnet segment provided in the upper magnetic field forming mechanism, and the lower side The magnet segment provided in the magnetic field forming mechanism is configured to be rotatable around a horizontal rotation axis and configured to be set in an upright state or an inclined state. .

  According to the present invention, it is possible to easily control and set an appropriate multipole magnetic field state according to the type of plasma processing process, and it is possible to easily perform a good process.

The figure which shows schematic structure of one Embodiment of the plasma processing apparatus of this invention. The figure which shows schematic structure of the magnetic field formation mechanism of the plasma processing apparatus of FIG. The figure for demonstrating rotation operation | movement of the magnet segment of the plasma processing apparatus of FIG. The figure which shows the state of the magnetic field intensity of the plasma processing apparatus of FIG. The figure which shows the relationship between in-plane distribution of an etching rate, and a magnetic field. The figure which shows the relationship between in-plane distribution of an etching rate, and a magnetic field. The figure which shows the relationship between in-plane distribution of an etching rate, and a magnetic field. The figure which shows the structure of the modification of a magnet segment. The figure which shows the modification of rotation operation | movement of a magnet segment. The figure which shows the modification of rotation operation | movement of a magnet segment. The figure which shows the modification of rotation operation | movement of a magnet segment. The figure which shows the principal part structure of one Embodiment of the plasma processing apparatus of this invention. The figure which shows the modification of rotation operation | movement of a magnet segment. The figure which shows the modification of rotation operation | movement of a magnet segment.

  The details of the present invention will be described below with reference to the drawings.

  FIG. 1 schematically shows an outline of a configuration of an embodiment in which the present invention is applied to a plasma etching apparatus for etching a semiconductor wafer. In FIG. 1, reference numeral 1 denotes a material such as aluminum. The figure shows a cylindrical vacuum chamber that can be hermetically closed inside and that constitutes a plasma processing chamber.

  The vacuum chamber 1 has a stepped cylindrical shape composed of a small-diameter upper portion 1a and a large-diameter lower portion 1b, and is connected to a ground potential. In addition, a support table (susceptor) 2 is provided inside the vacuum chamber 1 to support a semiconductor wafer W as a substrate to be processed substantially horizontally with the surface to be processed facing upward.

  The support table 2 is made of a material such as aluminum, for example, and is supported on a conductor support 4 via an insulating plate 3 made of ceramic or the like. A focus ring 5 made of a conductive material or an insulating material is provided on the outer periphery above the support table 2.

  An electrostatic chuck 6 for electrostatically attracting the semiconductor wafer W is provided on the mounting surface of the semiconductor wafer W of the support table 2. The electrostatic chuck 6 is configured by disposing an electrode 6a between insulators 6b, and a DC power source 13 is connected to the electrode 6a. When a voltage is applied to the electrode 6a from the power source 13, the semiconductor wafer W is attracted by, for example, Coulomb force.

  Further, the support table 2 is supplied with a He gas to the back surface of the semiconductor wafer W in order to efficiently transmit the cooling flow from the refrigerant to the semiconductor wafer W and a refrigerant flow path (not shown) for circulating the refrigerant. A gas introduction mechanism (not shown) is provided so that the temperature of the semiconductor wafer W can be controlled to a desired temperature.

  The support table 2 and the support table 4 can be moved up and down by a ball screw mechanism including a ball screw 7, and a drive portion below the support table 4 is covered with a bellows 8 made of stainless steel (SUS). A bellows cover 9 is provided on the outer side of 8.

  A power supply line 12 for supplying high-frequency power is connected to substantially the center of the support table 2. A matching box 11 and a high frequency power source 10 are connected to the feeder line 12. From the high frequency power supply 10, high frequency power in the range of 13.56 to 150 MHz, preferably in the range of 13.56 to 100 MHz, for example, 100 MHz, is supplied to the support table 2. Further, from the viewpoint of increasing the etching rate, it is preferable to superimpose a high frequency for plasma generation and a high frequency for drawing ions in the plasma, as a high frequency power source (not shown) for ion drawing (bias voltage control). The one having a frequency in the range of 500 KHz to 13.56 MHz is used. The frequency is preferably 3.2 MHz when the etching target is a silicon oxide film, and 13.56 MHz when the polysilicon film or organic material film is used.

  Further, a baffle plate 14 is provided outside the focus ring 5. The baffle plate 14 is electrically connected to the vacuum chamber 1 through the support 4 and the bellows 8.

  On the other hand, a shower head 16 is provided on the top wall portion of the vacuum chamber 1 above the support table 2 so as to face the support table 2 in parallel, and the shower head 16 is grounded. Therefore, the support table 2 and the shower head 16 function as a pair of electrodes.

  The shower head 16 is provided with a large number of gas discharge holes 18 on the lower surface thereof, and has a gas introduction part 16a on the upper part thereof. A gas diffusion space 17 is formed in the inside. A gas supply pipe 15a is connected to the gas introduction section 16a, and a processing gas supply system 15 for supplying a processing gas composed of a reactive gas for etching and a dilution gas is connected to the other end of the gas supply pipe 15a. Has been.

  As the reaction gas, for example, a halogen-based gas or the like can be used, and as the dilution gas, a gas usually used in this field such as Ar gas or He gas can be used. Such a processing gas reaches the gas diffusion gap 17 of the shower head 16 from the processing gas supply system 15 through the gas supply pipe 15a and the gas introduction portion 16a, and is discharged from the gas discharge hole 18 to be formed on the semiconductor wafer W. It is used for etching of the formed film.

  An exhaust port 19 is formed on the side wall of the lower portion 1 b of the vacuum chamber 1, and an exhaust system 20 is connected to the exhaust port 19. The vacuum chamber 1 can be depressurized to a predetermined degree of vacuum by operating a vacuum pump provided in the exhaust system 20. Further, a gate valve 24 that opens and closes the loading / unloading port of the semiconductor wafer W is provided on the upper side wall of the lower portion 1 b of the vacuum chamber 1.

  On the other hand, an annular magnetic field forming mechanism (ring magnet) 21 is disposed concentrically with the vacuum chamber 1 around the outside of the upper portion 1 a of the vacuum chamber 1, and the processing between the support table 2 and the shower head 16 is performed. A magnetic field is formed around the space. The entire magnetic field forming mechanism 21 can be rotated around the vacuum chamber 1 at a predetermined rotational speed by a rotating mechanism 25. In FIG. 1, the annular magnetic field forming mechanism 21 is illustrated integrally. However, as shown in FIG. 12, the annular magnetic field forming mechanism 21 is divided into two upper and lower parts. It consists of a magnetic field formation mechanism and a lower magnetic field formation mechanism.

  As shown in FIG. 2, the magnetic field forming mechanism 21 is composed of a plurality of (16 in FIG. 2) magnet segments 22 made of permanent magnets supported by a support member (not shown). The magnetic poles facing the vacuum chamber 1 are arranged so as to be alternately arranged with S, N, S, N,.

  That is, in the magnetic field forming mechanism 21, in the state shown in FIG. 2, the magnetic poles of the plurality of adjacent magnet segments 22 are arranged so that the magnetic poles are opposite to each other. For example, 0.02-0.2T (200-2000G), preferably 0.03-0.045T (300-450G) in the periphery of the processing space, that is, in the vicinity of the inner wall of the vacuum chamber 1, is formed between the magnet segments 22. A multipole magnetic field is formed so that the central portion of the semiconductor wafer W is substantially in a no magnetic field state.

  The reason why the strength range of the magnetic field is defined in this way is that if it is too strong, it causes a leakage magnetic field, and if it is too weak, the effect of plasma confinement cannot be obtained. Therefore, such a numerical value is an example due to structural (material) factors of the apparatus, and is not necessarily limited to this range.

  In addition, the substantial no magnetic field in the central portion of the semiconductor wafer W described above is desirably 0T, but a magnetic field that affects the etching process is not formed in the arrangement portion of the semiconductor wafer W, and the wafer is substantially free. Any value that does not affect the process may be used. In the state shown in FIG. 2, a magnetic field having a magnetic flux density of 42 OμT (4.2 G) or less, for example, is applied to the peripheral portion of the wafer, thereby exhibiting the function of confining plasma.

  Furthermore, in the present embodiment, each magnet segment 22 of the magnetic field forming mechanism 21 is rotatable around a vertical axis in the magnetic field forming mechanism 21 by a magnet segment rotating mechanism (not shown). .

  That is, as shown in FIG. 2 and FIG. 3A, the magnetic poles of each magnet segment 22 are adjacent to each other as shown in FIG. 3B and FIG. The magnet segments 22 are configured to rotate synchronously in the opposite direction, and thus every other magnet segment 22 rotates in the same direction. FIG. 3B shows a state where the magnet segment 22 is rotated 45 degrees, and FIG. 3C shows a state where the magnet segment 22 is rotated 90 degrees.

  4, the vertical axis represents the magnetic field strength, and the horizontal axis represents the distance from the center of the semiconductor wafer W disposed in the vacuum chamber 1, so that the magnetic poles of the magnet segments 22 correspond to the vacuum chamber 1 as shown in FIG. 3 (b), each magnet segment 22 is rotated 90 degrees as shown in FIG. 3 (c). The relationship between the distance from the center of the semiconductor wafer W and the strength of the magnetic field in the rotated state (curve C) is shown. The D / S inner diameter shown in the figure indicates the inner diameter of the deposit shield for protecting the inner wall provided on the inner wall of the vacuum chamber 1, and substantially indicates the inner diameter of the vacuum chamber 1 (processing chamber). ing.

  As shown by the curve A in FIG. 6, in the state where the magnetic poles of the magnet segments 22 face the vacuum chamber 1, the multipole magnetic field is formed substantially up to the peripheral edge of the semiconductor wafer W, and the curve C As shown in FIG. 4, in a state where the magnet segment 22 is rotated 90 degrees, a magnetic field is not substantially formed in the vacuum chamber 1 (the magnetic field strength is substantially zero). Further, as shown by the curve B, when the magnet segment 22 is rotated by 45 degrees, an intermediate state of the above state is obtained.

  Thus, in this Embodiment, each magnet segment 22 which comprises the magnetic field formation mechanism 21 synchronizes, and it is comprised so that rotation is possible so that the rotation direction of each adjacent magnet segment 22 may become the opposite direction. . The rotation of the magnet segment 22 substantially causes the multipole magnetic field to be formed around the semiconductor wafer W in the vacuum chamber 1 and substantially around the semiconductor wafer W in the vacuum chamber 1. The multi-pole magnetic field can be set in a state where no magnetic field is formed.

  Therefore, for example, when etching the above-described silicon oxide film or the like, etching is performed by forming a multipole magnetic field around the semiconductor wafer W in the vacuum chamber 1, whereby the etching rate within the surface of the semiconductor wafer W is increased. On the other hand, when the above-described organic low dielectric constant film (Low-K) or the like is etched, a multipole magnetic field is formed around the semiconductor wafer W in the vacuum chamber 1. Etching is performed without this, whereby the uniformity of the etching rate within the surface of the semiconductor wafer W can be improved.

  5 to 7 show the results of examining the uniformity of the etching rate in the surface of the semiconductor wafer W, with the vertical axis representing the etching rate (etching rate) and the horizontal axis representing the distance from the center of the semiconductor wafer. , Curve A does not form a multipole magnetic field in the vacuum chamber 1, curve B forms a 0.03T (300 G) multipole magnetic field in the vacuum chamber 1, and curve C is 0. 0 in the vacuum chamber 1. It shows a case where a multi-pole magnetic field of 08T (800G) is formed.

5 shows a case where the silicon oxide film is etched with C ₄ F ₈ gas, FIG. 6 shows a case where the silicon oxide film is etched with CF ₄ gas, and FIG. 7 shows a case where the organic gas is mixed with N ₂ and H _2. This shows a case where a low dielectric constant film (Low-K) is etched. As shown in FIGS. 5 and 6, when the silicon oxide film is etched with a gas containing C and F such as C ₄ F ₈ or CF ₄ gas, the etching is performed with a multipole magnetic field formed in the vacuum chamber 1. When performed, the in-plane uniformity of the etching rate can be improved. Further, as shown in FIG. 7, when an organic low dielectric constant film (Low-K) is etched with a mixed gas containing N ₂ and H ₂ , etching is performed without forming a multipole magnetic field in the vacuum chamber 1. By performing this, the in-plane uniformity of the etching rate can be improved.

  As described above, in the present embodiment, the state of the multipole magnetic field in the vacuum chamber 1 can be easily controlled by rotating the magnet segment 22, and the optimum multipole magnetic field can be controlled depending on the process to be performed. Good processing can be performed in the state.

  Of course, the number of magnet segments 22 is not limited to the 16 examples shown in FIG. Further, the cross-sectional shape is not limited to a rectangle as in the example shown in FIG. 2, and a circle, a square, or the like can be adopted. However, since the magnet segment 22 is rotated, a space for installing the magnet segment 22 is used. As shown in FIG. 8, it is preferable to use a cylindrical magnet segment 22 having a circular cross section as shown in FIG.

  Moreover, the magnet material which comprises the magnet segment 22 is not specifically limited, For example, well-known magnet materials, such as a rare earth magnet, a ferrite magnet, an alnico magnet, are applicable.

  Furthermore, in the above embodiment, the case where the magnet segments 22 are configured such that the adjacent magnet segments 22 are rotated in synchronization with each other in the opposite direction has been described, but the rotation of each magnet segment 22 is illustrated in FIG. As indicated by the arrows, they may be rotated in the same direction.

  Further, as shown by arrows in FIG. 10, only every other magnet segment 22 may be rotated, and every other magnet segment 22 may be fixed. By reducing the number of magnet segments 22 to be rotated in this manner, the rotation mechanism can be simplified.

  Furthermore, as shown in FIG. 11, one magnetic pole is constituted by a magnet segment pair of a plurality of magnet segments, for example, three magnet segments 22a, 22b, and 22c, and these magnet segments 22a, 22b, and 22c are synchronized. And it can also be configured to rotate in the same direction. Thus, the magnetic field strength can be increased by using a larger number of magnet segments.

  Furthermore, in the present embodiment, as shown in FIG. 12, the annular magnetic field forming mechanism 21 is composed of an upper magnetic field forming mechanism and a lower magnetic field forming mechanism that are divided into two in the vertical direction, and the upper magnetic field forming mechanism. The magnet segment 22a provided in the upper part and the magnet segment 22b provided in the lower magnetic field forming mechanism are configured to be movable in the vertical direction so as to approach and separate from each other. In the case of such a configuration, when the magnet segment 22a and the magnet segment 22b are brought close to each other, the magnetic field strength increases as shown by the arrow in FIG. 12 (a). On the other hand, the magnet segment 22a and the magnet segment 22b are When they are separated from each other, the magnetic field strength decreases as shown by the arrow in FIG.

  Further, in FIG. 13, similarly to the above, the annular magnetic field formation mechanism is configured by an upper magnetic field formation mechanism and a lower magnetic field formation mechanism that are divided into two parts in the vertical direction, and is provided in the upper magnetic field formation mechanism. The magnet segment 22c and the magnet segment 22d provided in the lower magnetic field forming mechanism are rotatable in a vertical plane around a rotation axis provided in the horizontal direction, and rotate in opposite directions in synchronization with each other. The case where it is configured to be moved is shown. In the case of such a configuration, when the magnet segment 22d and the magnet segment 22d are rotated so as to be inclined inward from the upright state of the magnet segment 22d, as shown by the arrow in FIG. On the other hand, when the magnet segment 22c and the magnet segment 22d are rotated so as to be inclined outward, as shown by the arrows in FIG. Get smaller.

  Further, in FIG. 14, similarly to the above, the annular magnetic field formation mechanism is composed of an upper magnetic field formation mechanism and a lower magnetic field formation mechanism that are divided into two upper and lower parts, and is provided in the upper magnetic field formation mechanism. Shown is a case where the magnet segment 22a and the magnet segment 22b provided in the lower magnetic field forming mechanism are configured to be movable in synchronization so as to be spaced apart in the radial direction and close to each other in the central direction. Yes. In the case of such a configuration, when the magnet segment 22a and the magnet segment 22b are moved close to the vacuum chamber 1, that is, moved so as to reduce the ring diameter, the magnetic field strength is as shown by the arrow in FIG. On the other hand, when the magnet segment 22a and the magnet segment 22b are moved away from the vacuum chamber 1, that is, when the ring diameter is increased, the magnetic field strength becomes as shown by the arrow in FIG. Get smaller.

  Next, processing in the plasma etching apparatus configured as described above will be described.

  First, the gate valve 24 is opened, and the semiconductor wafer W is loaded into the vacuum chamber 1 by a transfer mechanism (not shown) through a load lock chamber (not shown) arranged adjacent to the gate valve 24. And is placed on the support table 2 that has been lowered to a predetermined position in advance. Then, a predetermined voltage is applied from the DC power source 13 to the electrode 6a of the electrostatic chuck 6, and the semiconductor wafer W is attracted by the Coulomb force.

  Thereafter, after the transport mechanism is retracted outside the vacuum chamber 1, the gate valve 24 is closed, the support table 2 is raised to the position shown in FIG. 1, and the vacuum chamber is passed through the exhaust port 19 by the vacuum pump of the exhaust system 20. 1 is exhausted.

  After the inside of the vacuum chamber 1 reaches a predetermined degree of vacuum, a predetermined processing gas is introduced into the vacuum chamber 1 from the processing gas supply system 15 at a flow rate of, for example, 100 to 1000 sccm. The pressure is maintained at about 1.33 to 133 Pa (10 to 1000 mTorr), preferably about 2.67 to 26.7 Pa (20 to 200 mTorr).

  In this state, high frequency power having a frequency of 13.56 to 150 MHz, for example, 100 MHz, and power of 100 to 3000 W is supplied from the high frequency power supply 10 to the support table 2. In this case, high frequency power is applied to the support table 2 that is the lower electrode as described above, so that a high frequency is generated in the processing space between the shower head 16 that is the upper electrode and the support table 2 that is the lower electrode. An electric field is formed, whereby the processing gas supplied to the processing space is turned into plasma, and a predetermined film on the semiconductor wafer W is etched by the plasma.

  At this time, as described above, depending on the type of process to be performed, each magnet segment 22 is set in a predetermined direction in advance, and a multipole magnetic field having a predetermined strength is formed in the vacuum chamber 1, or a substantially vacuum is formed. The chamber 1 is set in a state where a multipole magnetic field is not formed.

  When a multipole magnetic field is formed, there is a possibility that a portion corresponding to the magnetic pole of the side wall (depot shield) of the vacuum chamber 1 (for example, a portion indicated by P in FIG. 2) is locally scraped. On the other hand, since the magnetic field forming mechanism 21 is rotated around the vacuum chamber 1 by the rotating mechanism 25 having a driving source such as a motor, the magnetic pole moves with respect to the wall portion of the vacuum chamber 1. The wall portion of the chamber 1 is prevented from being locally cut.

  Then, when the predetermined etching process is executed, the supply of the high frequency power from the high frequency power supply 10 is stopped, the etching process is stopped, and the semiconductor wafer W is removed from the vacuum chamber 1 by a procedure reverse to the above-described procedure. It is carried out to.

  In the above embodiment, the case where the present invention is applied to an etching apparatus for etching a semiconductor wafer has been described. However, the present invention is not limited to such a case. For example, a substrate other than a semiconductor wafer may be processed, and plasma processing other than etching, for example, a film forming processing apparatus such as CVD can be applied.

DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber, 2 ... Support table, 3 ... Insulating plate, 4 ... Support stand, 5 ... Focus ring, 6 ... Electrostatic chuck, 7 ... Ball screw, 8 ... Bellows, 9 ... ... Bellows cover, 10 ... High frequency power supply, 11 ... Matching box, 12 ... Feed line, 13 ... DC power supply, 14 ... Baffle plate, 15 ... Process gas supply system, 16 ... Shower head, 17 ... ... Gas diffusion gap, 18 ... gas discharge hole, 19 ... exhaust port, 20 ... exhaust system, 21 ... magnetic field forming mechanism, 22 ... magnet segment, 24 ... gate valve, 25 ... rotating mechanism.

Claims (4)

  A processing chamber for storing a substrate to be processed, a mechanism provided in the processing chamber for generating plasma for performing a predetermined plasma process on the substrate to be processed, and a plurality of magnet segments made of permanent magnets are arranged. A plasma processing apparatus provided outside the processing chamber and having a magnetic field forming mechanism for forming a predetermined multipole magnetic field around the substrate to be processed in the processing chamber, wherein the magnetic field forming mechanism is vertically The upper magnetic field forming mechanism and the lower magnetic field forming mechanism are provided separately, and the upper magnetic field forming mechanism and the lower magnetic field forming mechanism are configured to be movable in the vertical direction so as to approach and separate from each other. A plasma processing apparatus.   A processing chamber for storing a substrate to be processed, a mechanism provided in the processing chamber for generating plasma for performing a predetermined plasma process on the substrate to be processed, and a plurality of magnet segments made of permanent magnets are arranged. A plasma processing apparatus provided outside the processing chamber and having a magnetic field forming mechanism for forming a predetermined multipole magnetic field around the substrate to be processed in the processing chamber, wherein the magnetic field forming mechanism is vertically The upper magnetic field formation mechanism and the lower magnetic field formation mechanism provided separately, the magnet segment provided in the upper magnetic field formation mechanism, and the magnet segment provided in the lower magnetic field formation mechanism, A plasma processing apparatus, wherein the plasma processing apparatus is configured to be rotatable about a rotation axis in a horizontal direction and set in an upright state and an inclined state.   3. The plasma processing apparatus according to claim 1, wherein the magnet segment is formed in a substantially cylindrical shape.   The plasma processing apparatus according to claim 1, wherein plasma is applied to the substrate to be processed to perform an etching process.

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