WO2003049170A1

WO2003049170A1 - Plasma processing device

Info

Publication number: WO2003049170A1
Application number: PCT/JP2002/012736
Authority: WO
Inventors: Daisuke Hayashi; Hiroo Ono; Toshihiro Hayami
Original assignee: Tokyo Electron Limited
Priority date: 2001-12-07
Filing date: 2002-12-05
Publication date: 2003-06-12
Also published as: AU2002354093A1

Abstract

A plasma processing device, wherein magnetic segments (22) are installed on an annularly formed rotary body (30), an annular gear (32) for self-rotating is installed adjacent to and coaxially with the rotary body (30), when the rotary body (30) and the gear (32) for self-rotating are rotated relative to each other, pinion gears (35) and gears (34) are rotated by gear teeth (32b) provided along the inner peripheral part of the gear (32) for self-rotating to self-rotating the magnetic segments (22) relative to the rotary body (30) and, when the rotary body (30) and the gear (32) for self-rotating are rotated in synchronism with each other, the magnetic segments (22) are not rotated relative to the rotary body (30) and rotated around a process chamber so as to be revolved together with the rotary body (30), whereby the proper status of magnetic field can be easily controlled and set according to the type of a plasma processing process, and an excellent processing can be easily performed.

Description

Description Plasma processing equipment

Technical field

The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus for performing a plasma process such as etching on a substrate to be processed such as a semiconductor wafer. Background art

2. Description of the Related Art Conventionally, in the field of manufacturing semiconductor devices, plasma is generated in a processing chamber, and the plasma is applied to a substrate to be processed (for example, a semiconductor wafer or the like) disposed in the processing chamber to perform predetermined processing (for example, etching). , Film formation, etc.) are used.

In such a plasma processing apparatus, in order to perform good processing, it is necessary to maintain the plasma state in a good state suitable for plasma processing. For this reason, conventionally, there is a plasma processing apparatus provided with a magnetic field forming mechanism for forming a magnetic field for controlling plasma.

There are roughly two types of this magnetic field formation mechanism. One is a dipole-type magnetic field forming mechanism that forms a dipole magnetic field in a certain direction above a substrate to be processed, such as a semiconductor wafer, which is disposed horizontally with the surface to be processed facing upward.

The other is to arrange a large number of N and S magnetic poles alternately adjacent to the substrate to be processed, such as a semiconductor wafer or the like, which is placed horizontally with the surface to be processed facing upward. This is a multipole magnetic field forming mechanism that forms a multipole magnetic field so as to surround the substrate to be processed (no magnetic field is formed above the substrate to be processed). As described above, conventionally, a plasma processing apparatus that performs a plasma process such as an etching process while controlling a plasma state by a magnetic field has been known.

However, in a plasma process, for example, an etching process, a suitable magnetic field may vary depending on the type of the etching process. In some cases, a uniform etching process can be performed without a magnetic field. For example, when etching a silicon oxide film, etc., etching in a plane of a semiconductor wafer is more effective when a multipole magnetic field is formed than when a multipole magnetic field is not formed. The uniformity of the rate (etching rate) can be improved. That is, when etching is performed without forming a multi-pole magnetic field, the etching rate becomes higher at the center of the semiconductor wafer and becomes lower at the periphery of the semiconductor wafer. Sex arises. On the other hand, when etching an organic low dielectric constant film (Low-K), etching without forming a multi-pole magnetic field was more effective when forming a multi-pole magnetic field. Compared to the case, the uniformity of the etching rate in the plane of the semiconductor wafer can be improved. That is, when etching is performed by forming a multipole magnetic field, the etching rate becomes lower at the center of the semiconductor wafer, and the etching rate becomes higher at the periphery of the semiconductor wafer. Sex arises. Here, if the above-described magnetic field forming mechanism is formed of an electromagnet, control of the formation and disappearance of the magnetic field can be easily performed. However, the use of electromagnets raises the problem of increased power consumption, and many devices use permanent magnets.

For this reason, there is a problem that the control of the formation and disappearance of the magnetic field must be performed by attaching and detaching the magnetic field forming means, and cannot be easily performed. there were.

In addition, if the magnetic field generated by the magnetic field forming mechanism is fixed, the plasma becomes non-uniform between the magnetic pole part and other parts, so the magnetic field forming mechanism is rotated around the processing chamber. Many have been done. For this reason, for example, when the magnetic field distribution around the semiconductor wafer is changed according to the process, it is not possible to individually move the permanent magnets (magnet segments) provided in the magnetic field forming mechanism to control the direction of the magnetic poles. There are also difficult issues. Disclosure of the invention

Therefore, an object of the present invention is to provide a plasma processing apparatus that can easily control and set an appropriate magnetic field state according to the type of a plasma processing process, and can easily perform good processing. It is in.

The plasma processing apparatus of the present invention includes: a process chamber for accommodating a substrate to be processed; a plasma generating mechanism for generating a predetermined plasma in the process chamber; and a rotation formed in an annular shape so as to surround the process chamber. A plurality of magnet segments for plasma control provided on the rotating body and arranged so as to surround the periphery of the process chamber; and coaxially arranged with the rotating body and formed along the circumferential direction. A rotating gear provided with the rotating body, the rotating gear provided with the rotating body, meshing with the rotating gear, and rotating the magnet segment. By rotating the gear and the rotating body relatively, the magnet segment is rotated with respect to the rotating body so as to rotate, and the rotation gear and the rotating gear are rotated. By rotating the rotating body in synchronization with the rotating body, the magnet segment is configured to rotate so as to revolve around the process chamber without rotating with respect to the rotating body. You O

Further, the plasma processing apparatus of the present invention is characterized in that the magnet segment is capable of forming a predetermined multi-pole magnetic field around the substrate to be processed in the process chamber.

Further, the plasma processing apparatus according to the present invention is characterized in that the adjacent magnet segments are configured to be rotatable such that they rotate in opposite rotation directions.

Further, the plasma processing apparatus of the present invention is characterized in that the magnet segments are configured to be rotatable so as to rotate in the same rotational direction. Further, the plasma processing apparatus of the present invention is characterized in that a part of the magnet segments is fixed, and the other magnet segments are rotatable so as to rotate.

Further, the plasma processing apparatus of the present invention is characterized in that one magnetic pole of the predetermined multipole magnetic field is formed by a magnet segment pair including a plurality of the magnet segments provided adjacent to each other. I do. The plasma processing apparatus according to the present invention may further include a state where a predetermined multi-pole magnetic field is formed around the substrate to be processed in the process chamber by rotating the magnet segment so as to rotate. A state in which a multi-pole magnetic field is not formed around the substrate to be processed in the bar can be set.

Further, in the plasma processing apparatus of the present invention, the rotating body provided with the magnet segment and the rotating body-side rotating gear, and the rotating gear are provided at an upper portion and a lower portion of the process chamber, respectively. It is characterized by having. Further, the plasma processing apparatus of the present invention is characterized in that an etching process is performed by applying a plasma to the substrate to be processed. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing a schematic configuration of an embodiment of a plasma processing apparatus of the present invention. FIG. 2 is a diagram showing a schematic configuration of a main part of the plasma processing apparatus of FIG.

FIG. 3 is a diagram showing a schematic configuration of a main part of the plasma processing apparatus of FIG.

FIG. 4 is a diagram showing a schematic configuration of a main part of the plasma processing apparatus of FIG.

FIG. 5 is a diagram for explaining a rotating operation of a magnet segment of the plasma processing apparatus of FIG.

FIG. 6 is a diagram showing a schematic configuration of a main part of another embodiment.

FIG. 7 is a diagram showing a schematic configuration of a main part of another embodiment.

FIG. 8 is a diagram showing a schematic configuration of a main part of another embodiment.

FIG. 9 is a diagram showing a schematic configuration of another embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 schematically shows a schematic configuration of an embodiment in which the present invention is applied to a plasma etching apparatus for etching a semiconductor wafer. In the figure, reference numeral 1 denotes a process chamber made of, for example, aluminum or the like and configured so that the inside can be hermetically closed.

The process chamber 1 has a stepped cylindrical shape having a small-diameter upper portion 1a and a large-diameter lower portion 1b, and is connected to a ground potential. Further, inside the process chamber 1, a support table (susceptor) 2 for supporting a semiconductor wafer W as a substrate to be processed substantially horizontally with a surface to be processed facing upward is provided.

The support table 2 is made of, for example, a material such as aluminum, and is supported on a conductor support 4 via an insulating plate 3 such as a ceramic. In addition, a conductive material or an insulating material A focus ring 5 made of a conductive material is provided. An electrostatic chuck 6 for electrostatically adsorbing the semiconductor wafer W is provided on a portion of the upper surface of the support tape 2 on which the semiconductor wafer W is placed. The electrostatic check 6 is configured by disposing an electrode 6a between insulators 6b, and a DC power supply 13 is connected to the electrode 6a. When a voltage is applied to the electrode 6 a from the DC power supply 13, the semiconductor wafer W is attracted to the electrostatic chuck 6 by, for example, Coulomb force.

Further, the support table 2 has a coolant flow path (not shown) for circulating the coolant, and an Hθ gas is supplied to the back surface of the semiconductor wafer W in order to efficiently transmit cold heat from the coolant to the semiconductor wafer w. A gas introducing mechanism (not shown) is provided to control the temperature of the semiconductor wafer W to a desired temperature.

The support table 2 and the support table 4 can be moved up and down by a ball screw mechanism including a ball screw 7. The lower drive portion of the support 4 is covered with a bellows 8 made of stainless steel (SUS), and a bellows cover 9 is provided outside the bellows 8.

A power supply line 12 for supplying high-frequency power is connected to substantially the center of the support table 2. A matching box 11 and a high-frequency power supply 10 are connected to the power supply line 12. From the high frequency power supply 10, a range of 13.56 to 150 MHz, preferably 13.56 to; a range of LOO MHz, for example, a high frequency power of 100 MHz is supported 2 is supplied.

Further, from the viewpoint of increasing the etching rate, it is preferable to superimpose a high frequency for generating plasma and a high frequency for attracting ions in the plasma. High frequency power supply for ion attraction (bias voltage control) (Figure The frequency is in the range of 500 kHz to 13.5 MHz. The frequency is preferably 3.2 MHz when the etching target is a silicon oxide film, and 13.56 MHz when the etching target is a polysilicon film or an organic material film.

Further, an exhaust ring 14 is provided outside the focus ring 5. The exhaust ring 14 is electrically connected to the process chamber 1 via the support 4 and the bellows 8.

On the other hand, a shower head 16 is provided on the top wall portion of the process chamber 1 above the support table 2 so as to face in parallel with the support table 2, and the shower head 16 is grounded. ing. Therefore, the support table 2 and the shear head 16 function as a pair of electrodes.

The lower head 16 has a large number of gas discharge holes 18 provided on the lower surface thereof, and has a gas inlet 16a at the upper portion thereof. Further, a gas diffusion space 17 is formed therein. A gas supply pipe 15a is connected to the gas introduction section 16a, and the other end of the gas supply pipe 15a is supplied with a processing gas including a reaction gas for etching and a dilution gas. Gas supply system 15 is connected.

As the reaction gas, for example, a halogen-based gas or the like can be used. As the diluent gas, gases usually used in this field, such as Ar gas and He gas, can be used. Such processing gas flows from the processing gas supply system 15 to the chamber via the gas supply pipe 15a and the gas introduction section 16a, reaches the gas diffusion space 17 of the shield 16, and has a gas discharge hole. The liquid is discharged from the substrate 18 and is used for etching a film formed on the semiconductor wafer W. An exhaust port 19 is formed on the side wall of the lower portion 1 b of the process chamber 1, and an exhaust system 20 is connected to the exhaust port 19. By operating a vacuum pump provided in the exhaust system 20, the pressure in the process chamber 1 can be reduced to a predetermined degree of vacuum. Further, a gate valve 24 for opening and closing the loading / unloading port of the semiconductor wafer W is provided on the upper side wall of the lower portion 1 b of the process chamber 1. On the other hand, an annular magnetic field forming mechanism (ring magnet) 21 is arranged concentrically with the process chamber 1 around the outside of the upper portion 1 a of the process chamber 1. The magnetic field forming mechanism 21 forms a magnetic field around the processing space between the support table 2 and the shower head 16. The entire magnetic field forming mechanism 21 is rotatable around the process chamber 1 at a predetermined rotation speed.

As shown in FIG. 2, the magnetic field forming mechanism 21 is composed of a plurality (16 in FIG. 2) of cylindrical magnet segments 22 made of permanent magnets. For example, the magnetic poles directed to the process chamber 1 are arranged so as to be alternately arranged with S, N, S, N,. That is, in the magnetic field forming mechanism 21, in the state shown in FIG. 2, the magnet poles of the plurality of adjacent magnet segments 22 are arranged so that the magnetic poles are opposite to each other. Therefore, magnetic lines of force are formed between adjacent magnet segments 22 as shown in the figure, and a predetermined strength (for example, 0.02 to 0.2 T (2 A magnetic field of 0.000 to 200 G), preferably 0.03 to 0.045 T (300 to 450 G)) is formed, and the center of the semiconductor wafer W is substantially free of a magnetic field. A multipole magnetic field is formed so as to be in a state.

The reason why the strength range of the magnetic field is defined in this way is that too strong a magnetic field causes a leakage magnetic field, while too weak a magnetic confinement effect cannot be obtained. Therefore, such a numerical value is an example based on structural (material) factors of the device, and is not necessarily limited to this range. Absent.

In addition, the above-described substantially no magnetic field at the center of the semiconductor wafer w is originally desirably 0 T. Any value that does not affect wafer processing is acceptable. In the state shown in FIG. 2, a magnetic field having a magnetic flux density of, for example, 420 ° T (4.2 G) or less is applied to the peripheral portion of the wafer, thereby exerting a function of confining plasma.

As shown in FIG. 3, each of the magnet segments 22 is rotatably provided on a rotating body 30 formed in an annular shape so as to surround the process chamber 1. On the outer peripheral edge of the rotating body 30, a gear 30a is formed all around along the circumferential direction. The gear 30 a meshes with a drive gear 31 connected to a drive motor (not shown), and the rotation of the drive gear 31 causes the entire rotating body 30 to surround the process chamber 1. It is configured to rotate with.

Further, an annular rotation gear 32 is provided adjacent to or above the rotating body 30 (adjacent to the upper side in FIG. 3) and coaxially with the rotating body 30. The rotation gear 32 has a gear 32a formed all around its outer peripheral edge and a gear 32b formed all around its inner peripheral part. A drive gear 33 connected to a drive motor (not shown) meshes with a gear 32 a provided along the outer peripheral edge, and the rotation of the drive gear 33 causes the rotation gear to rotate. The whole 32 is configured to rotate around the process chamber 1.

On the other hand, the rotating body 30 is provided with a rotating body-side rotating gear corresponding to the gear 32 b provided along the inner peripheral portion of the rotating gear 32.

The rotating body side rotation gear is provided with a gear 34 provided on the rotating shaft of the magnet segment 22 and a gear 34 for transmitting the driving force of the gear 32 b to the gear 34. And one or more pinion gears 35. The gear 34 may be directly meshed with the gear 32b. As shown in FIG. 4, in this example, one set of rotating body side rotation gears includes four pinion gears 35a, 35b, 35c, 35d. In Fig. 4 (the same applies to Figs. 6 and 7 described later), each gear is simplified and shown as a circle.

Then, these two pinion gears 35 a, 35 b, 35 c, 35 d and two gears 34 synchronize and rotate two adjacent magnet segments 22 in mutually different rotation directions. This is a rotation with respect to the rotating body 30 and is hereinafter referred to as a rotation.)

That is, the rotating body 30 and the rotating gear 32 are relatively rotated. For example, with the rotating body 30 fixed, the rotating gear 32 is directed upward in the figure as shown in FIG. When rotated (counterclockwise), the pinion gear 35 a meshed with the gear 32 b provided along the inner periphery of the rotation gear 32 rotates counterclockwise, and this gear 35 The two pinion gears 35b and 35c meshing with a rotate clockwise, and the pinion gear 35d meshing with the pinion gear 35c rotates counterclockwise.

Then, the gear 3 4 meshed with the pinion gear 3 5b (the gear 3 4 shown at the top in the figure) rotates counterclockwise, and the gear 3 4 meshed with the pinion gear 3 5d (from the top in the figure). The second gear 3 4) is designed to rotate clockwise. The rotating body-side rotation gear having such a configuration is provided on each magnet segment 22, whereby each magnet segment 22 provided on the rotating body 30 is provided together with the gear 34 by the respective magnet segment 22. It is configured to rotate in synchronization with the adjacent magnet segment 22 in the opposite direction.

FIG. 5 is for explaining the state of the control of the magnetic field by the rotation of the magnet segment 22. As shown in Fig. 5 (a), each magnet segment 2 2 magnetic poles alternate with S, N, S, N,

(Wafer W side), the adjacent magnet segments 22 rotate in the opposite direction (so every other magnet segment 22 rotates in the same direction), and FIG. 5 (b) As shown in Fig. 7, when each magnet segment 22 is rotated 90 degrees, the state of the magnetic field changes as shown by the arrow in the figure. That is, as shown in FIG. 5 (a), when the magnetic poles of the respective magnet segments 22 are directed toward the process chamber 1 (wafer W side), the multipole magnetic field is substantially generated at the peripheral portion of the semiconductor wafer W. As shown in FIG. 5 (b), when the magnet segment 22 is rotated 90 degrees, a state in which substantially no magnetic field is formed in the process chamber 1 (magnetic field strength) Is approximately zero).

As described above, in the present embodiment, by rotating the rotating body 30 and the rotation gear 32 relatively, each magnet segment 22 is rotated in the rotational direction of the adjacent magnet segment 22. Can be rotated synchronously so that they are in opposite directions. By the rotation of the magnet segments 22, the multipole magnetic field is substantially formed around the semiconductor wafer W in the process chamber 1 and the periphery of the semiconductor wafer W in the process chamber 1. Can be set to a state in which a multi-pole magnetic field is not substantially formed.

Then, after rotating each magnet segment 22 as described above to obtain a desired magnetic field, during the etching process of the wafer W, the rotating body 30 and the rotating gear 32 are connected with each other. Rotate synchronously so that relative rotation does not occur. With the rotation of the rotating body 30 and the rotation gear 32 synchronized with each other, the respective magnet segments 22 are moved around the process chamber 1 in a state where the above-described rotation does not occur in each magnet segment 22. It can be rotated to revolve. The positional relationship between the rotating body 30 and the rotation gear 32 is as follows. The detection is sequentially performed by a sensor (not shown). Based on a detection signal from the sensor, control is performed so that relative rotation between the rotating body 30 and the rotation gear 32 does not occur. You.

In the above-described embodiment, the rotation gear 32 is rotated with the rotation body 30 fixed, and the rotation body 30 is rotated in synchronization with the rotation gear 32 at the start of the process. However, it is not limited to this.

That is, first, the rotation gear 32 is rotated counterclockwise as shown by the arrow in FIG. 4, and the rotating body 30 is rotated in the same direction as the rotation gear 32 (counterclockwise), and By rotating at a rotation speed different from the rotation speed of the rotation gear 32, each magnet segment 22 is rotated to set the magnetic field distribution in the process chamber 1 to a desired magnetic field distribution. Thereafter, by rotating the rotating body 30 and the rotation gear 32 at the same rotation speed and rotating them synchronously, the rotation is prevented from occurring in each magnet segment 22, ie, the process. With the magnetic field distribution in the chamber 1 fixed, each magnet segment 22 can revolve around the process chamber 1.

In this way, by rotating the rotating body 30 and the rotation gear 32 relatively (using a differential), it is possible to control the rotation from the rotation and the rotation from the rotation with a very simple configuration. Can be.

For example, when the above-described etching of a silicon oxide film or the like is performed by the magnetic field control by the rotation of the magnet segments 22, a multipole magnetic field is formed around the semiconductor wafer W in the process chamber 1 to perform the etching. Thereby, the uniformity of the etching rate in the plane of the semiconductor wafer W can be improved. On the other hand, when etching the above-mentioned organic low dielectric constant film (Low-K) or the like, the etching is performed without forming a multipole magnetic field around the semiconductor wafer W in the process chamber 1. Thereby, the uniformity of the in-plane etching rate of the semiconductor wafer w can be improved.

As described above, in the present embodiment, by rotating the rotating body 30 and the rotation gear 32 relative to each other, the magnet segment 22 rotates and the multipole magnetic field in the process chamber 1 is reduced. The state can be easily controlled. Therefore, depending on the process to be performed, good processing can be performed in an optimal multipole magnetic field state. Further, since there is no need to provide a motor or the like for rotating the magnet segment 22 on the rotating body 30, there is no need to supply power through the rotating part, and the structure can be simplified.

The number of the magnet segments 22 is, of course, not limited to the example of 16 magnets shown in FIG. Also, the cross-sectional shape is not limited to a circle as in the example shown in FIG. 2, but may be a square or a polygon.

Further, the magnet material constituting the magnet segment 22 is not particularly limited. For example, a known magnet material such as a rare earth magnet, a ferrite magnet, and an alnico magnet can be used.

Further, in the above-described embodiment, a case has been described in which the magnet segments 22 are configured such that the adjacent magnet segments 22 rotate in synchronization with each other in the opposite directions, and each magnet segment 22 is They may rotate in the same direction.

Alternatively, only some of the magnet segments 22 may be rotated, and the other magnet segments 22 may be fixed. In this way, by reducing the number of the magnet segments 22 to be rotated, the rotation mechanism can be simplified, and the driving torque for rotating the magnet segment 22 by being piled on the magnetic force can be reduced. Reduction can be achieved. FIGS. 6 and 7 show an example of the configuration of the rotating body-side rotation gear when rotating the magnet segment 22 as described above.

In the example shown in FIG. 6, the three pinion gears 35a, 35b, 35c rotate adjacent gears 34 in the same direction, and together with these gears 34, adjacent magnet segments 2 2 Are configured to rotate in the same direction. In addition, in the example shown in FIG. 7, pinion gears 35a and 35b that mesh only with every other gear 34 are provided, and only every other magnet segment 22 rotates. It is configured as follows. In this case, the gear 34 of the magnet segment 22 that does not rotate can be omitted.

The combination of the pinion gears and the like for rotating the magnet segments is not limited to the above, and any combination may be used. By appropriately changing these, the desired rotation of the magnet segments 22 can be achieved. Can be configured.

Furthermore, as shown in FIG. 8, one magnetic pole is constituted by a plurality of magnet segments, for example, a magnet segment pair of three magnet segments 22a, 22b, 22c. The magnet segments 22 a, 22 b, and 22 c may be configured to rotate in the same direction. In this case, if it is applied to the case where the 16 magnet segments 22 shown in FIG. 2 described above are used, a total of 48 magnet segments will be used. As described above, by using a larger number of magnet segments, the magnetic field strength can be increased. Even in such a case, the presence or absence of the rotation of the magnet segments 22 a, 22 b, and 22 c may be configured such that only a part of the magnet segments 22 a, 22 b, and 22 c rotate, or the magnet segments 22 a, 22 b, and 22 c rotate in the opposite direction. The direction and the direction can be appropriately combined. For example, among the magnet segments 22a, 22b and 22c, the center magnet segment 22b is fixed, and the magnet segments 22a and 22c on both sides are reversed. There is a configuration that rotates. Further, as shown in FIG. 9, for example, the magnetic field forming mechanism 21 may have a configuration in which two smaller magnetic field forming mechanisms 21 a and 21 b are provided separately in the vertical direction.

Next, processing in the plasma etching apparatus configured as described above will be described.

First, according to the type of etching process to be performed, the magnet segment 22 is rotated by rotating the rotating body 30 and the rotation gear 32 in advance in advance, and the multipole in the process chamber 1 is rotated. Set the magnetic field to the desired state.

First, the gate valve 24 is opened, and the semiconductor wafer W is processed by the transfer mechanism (not shown) through the load lock chamber (not shown) disposed adjacent to the gate valve 24 by the transfer mechanism (not shown). It is transported into the device 1 and placed on the support table 2 which has been lowered to a predetermined position in advance.

Next, a predetermined voltage is applied from the DC power supply 13 to the electrode 6a of the electrostatic chuck 6, and the semiconductor wafer W is attracted by a cron force or the like.

Thereafter, after the transfer mechanism is retracted out of the process chamber 1, the gate valve 24 is closed, the support table 2 is raised to the position shown in FIG. 1, and the exhaust system 20 is evacuated by the vacuum pump. Exhaust the process chamber 1 through port 19.

After the inside of the process chamber 1 reaches a predetermined degree of vacuum, a predetermined process gas is introduced into the process chamber 1 from the process gas supply system 15 at a predetermined flow rate (for example, 100 to 100 sccm). A predetermined pressure (for example, 1.33 to: L33Pa (10 to; L0000mTorr)) in the process chamber 1, preferably 2.67 to 26.7Pa (20 ~ 200 mT orr)) ~ ί 0

Then, in this state, the high frequency power supply 10 is transferred to the support tape 2 for a predetermined period. A high frequency power of a wave number (for example, 13.56 to 150 MHz) and a predetermined power (for example, 100 to 300 W) is supplied. In this case, the high-frequency power is applied to the support table 2 as the lower electrode as described above, so that the distance between the shower head 16 as the upper electrode and the support table 2 as the lower electrode is increased. A high-frequency electric field is formed in the processing space, whereby the processing gas supplied to the processing space is turned into plasma, and a predetermined film on the semiconductor wafer W is etched by the plasma.

At this time, as described above, depending on the etching process to be performed, a state in which a desired multi-pole magnetic field is formed in the process chamber 1, or a multi-pole magnetic field is substantially formed in the process chamber 1. It is set to a state where no etching is performed, and a good etching process is performed.

When a multi-pole magnetic field is formed, a portion corresponding to the magnetic pole on the side wall of the process chamber 1 (for example, a portion indicated by P in FIG. 2) may be locally cut. Therefore, during the etching process, the rotating body 30 and the rotation gear 32 are synchronously rotated, and the magnetic field is rotated by revolving the magnet segment 22 around the process chamber 1. As a result, the magnetic pole moves with respect to the wall of the process chamber 1, so that the wall of the process chamber 1 is prevented from being locally cut.

Then, when the predetermined etching process is performed, the supply of the high-frequency power from the high-frequency power source 10 is stopped, the etching process is stopped, and the semiconductor wafer W is processed in the reverse order to the above-described procedure. Take it out of bus 1. In the above embodiment, the case where the present invention is applied to an etching apparatus for etching a semiconductor wafer has been described, but the present invention is not limited to such a case. For example, a substrate other than a semiconductor wafer, such as a glass substrate, may be processed, and the present invention can be applied to plasma processing other than etching, for example, a film forming apparatus such as CVD. Wear. Also, the magnetic field is not limited to a multipole magnetic field, and can be applied to a dipole magnetic field and the like.

As described above, according to the present invention, an appropriate magnetic field state can be easily controlled and set in accordance with the type of the plasma processing process, and favorable processing can be easily performed. Industrial applicability

The plasma processing apparatus according to the present invention can be used in the semiconductor manufacturing industry or the like that manufactures semiconductor devices. Therefore, it has industrial potential.

Claims

The scope of the claims

1. a process chamber containing a substrate to be processed;

A plasma generation mechanism for generating a predetermined plasma in the process chamber;

A rotating body formed in an annular shape so as to surround the periphery of the process chamber; a plurality of magnet segments for plasma control provided on the rotating body and arranged so as to surround the periphery of the process chamber;

An annular rotation gear disposed coaxially with the rotating body and having a gear formed along a circumferential direction;

A rotating body-side rotating gear that is provided on the rotating body, meshes with the rotation gear, and rotates the magnet segment.

By rotating the rotation gear and the rotating body relatively, the magnet segment is rotated with respect to the rotating body so as to rotate, and the rotation gear and the rotating body are rotated in synchronization with each other. The plasma processing apparatus is configured to rotate the magnet segment so as to revolve around the process chamber without rotating the magnet segment with respect to the rotating body.

2. The plasma processing apparatus according to claim 1,

A plasma processing apparatus, wherein the magnet segment is configured to form a predetermined multipole magnetic field around the substrate to be processed in the process chamber.

3. The plasma processing apparatus according to claim 2,

A plasma processing apparatus, wherein adjacent magnet segments are configured to be rotatable so as to rotate in opposite rotation directions.

4. The plasma processing apparatus according to claim 2, A plasma processing apparatus, wherein all of the magnet segments are configured to be rotatable so as to rotate in the same rotational direction.

5. The plasma processing apparatus according to claim 2,

A plasma processing apparatus characterized in that a part of the magnet segments is fixed and the other magnet segments are rotatable so that only the other magnet segments rotate.

6. The plasma processing apparatus according to claim 2,

A plasma processing apparatus, wherein one magnet pole of the predetermined multipole magnetic field is formed by a magnet segment pair including a plurality of magnet segments provided adjacent to each other.

7. The plasma processing apparatus according to claim 2,

A state in which a predetermined multipole magnetic field is formed around the substrate to be processed in the process chamber by rotating the magnet segment so as to rotate, and a multipole is formed around the substrate to be processed in the process chamber. A plasma processing apparatus, wherein a state in which a magnetic field is not formed can be set.

8. The plasma processing apparatus according to claim 1,

A plasma processing apparatus, wherein the rotating body provided with the magnet segment and the rotating body-side rotating gear, and the rotating gear are provided at an upper portion and a lower portion of the process chamber, respectively.

9. The plasma processing apparatus according to claim 1,

A plasma processing apparatus, wherein an etching process is performed by applying plasma to the substrate to be processed.