TW201724398A - Substrate heating apparatus and substrate heating method shortening the tact time required for heating a substrate - Google Patents

Substrate heating apparatus and substrate heating method shortening the tact time required for heating a substrate Download PDF

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Publication number
TW201724398A
TW201724398A TW105129482A TW105129482A TW201724398A TW 201724398 A TW201724398 A TW 201724398A TW 105129482 A TW105129482 A TW 105129482A TW 105129482 A TW105129482 A TW 105129482A TW 201724398 A TW201724398 A TW 201724398A
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TW
Taiwan
Prior art keywords
heating
substrate
temperature
unit
heating unit
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TW105129482A
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Chinese (zh)
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TWI703688B (en
Inventor
加藤茂
山谷謙一
升芳明
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東京應化工業股份有限公司
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Publication of TW201724398A publication Critical patent/TW201724398A/en
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Publication of TWI703688B publication Critical patent/TWI703688B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Coating Apparatus (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

This invention shortens the tact time required for heating a substrate. The substrate heating apparatus of the embodiment includes: a depressurizing section capable of decompressing a substrate coated with a solution for forming polyimide; a first heating unit capable of heating the substrate at a first temperature; and a second heating unit capable of heating the substrate at a second temperature higher than the first temperature, wherein the second heating unit is provided separately from the first heating unit.

Description

基板加熱裝置及基板加熱方法Substrate heating device and substrate heating method

本發明係關於一種基板加熱裝置及基板加熱方法。The present invention relates to a substrate heating apparatus and a substrate heating method.

近年來，作為電子裝置用之基板，有代替玻璃基板而使用具有可撓性之樹脂基板之市場需求。例如，此種樹脂基板使用聚醯亞胺膜。例如，聚醯亞胺膜係於對基板塗佈聚醯亞胺之前驅物之溶液之後，經過加熱上述基板之步驟(加熱步驟)而形成。例如，作為聚醯亞胺之前驅物之溶液，有包含聚醯胺酸及溶劑之聚醯胺酸清漆(例如，參照專利文獻1及專利文獻2)。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2001-210632號公報 [專利文獻2]國際公開第2009/104371號In recent years, as a substrate for an electronic device, there is a market demand for using a flexible resin substrate instead of a glass substrate. For example, such a resin substrate uses a polyimide film. For example, the polyimide film is formed by applying a solution of the precursor of the polyimide to the substrate and then heating the substrate (heating step). For example, as a solution of the polyimide precursor, there is a polyamic acid varnish containing polyglycolic acid and a solvent (for example, refer to Patent Document 1 and Patent Document 2). [Prior Art Document] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-210632 [Patent Document 2] International Publication No. 2009/104371

[發明所欲解決之問題] 且說，上述加熱步驟包括：第一步驟，其係以相對較低之溫度使溶劑蒸發；及第二步驟，其係以相對較高之溫度使聚醯胺酸硬化。因此，有將基板之加熱溫度自第一步驟之溫度提高至第二步驟之溫度期間需要長時間之虞，於將基板之加熱所需要之節拍時間縮短化方面存在問題。 鑒於如上所述之情況，本發明之目的在於提供一種能夠將基板之加熱所需要之節拍時間縮短化之基板加熱裝置及基板加熱方法。 [解決問題之技術手段] 本發明之一態樣之基板加熱裝置之特徵在於包含：減壓部，其能夠將塗佈有用以形成聚醯亞胺之溶液之基板減壓；第一加熱部，其能夠以第一溫度加熱上述基板；及第二加熱部，其能夠以較上述第一溫度更高之第二溫度加熱上述基板；且上述第二加熱部與上述第一加熱部個別獨立地設置。 根據該構成，第二加熱部與第一加熱部個別獨立地設置，因此，能夠將第二加熱部之升溫速率設為較第一加熱部之升溫速率更大，能夠使基板溫度於短時間內達到所需要之溫度。例如，能夠於使第一加熱部接近基板之前(具體而言，於基板投入時)，藉由減壓部將基板設為減壓氣體氛圍，並於保持該減壓氣體氛圍之狀態下，一面利用第一加熱部加熱基板，一面進而利用第二加熱部加熱基板。又，亦能夠於利用第一加熱部加熱基板期間，預先將第二加熱部升溫，而能夠以第二溫度加熱基板。因此，無須考慮將基板之加熱溫度自第一溫度提高至第二溫度期間之時間。因此，能夠將基板之加熱所需要之節拍時間縮短化。 於上述基板加熱裝置中，上述第二加熱部之升溫速率亦可較上述第一加熱部之升溫速率更大。 根據該構成，和第二加熱部之升溫速率為與第一加熱部之升溫速率同等以下之情形相比，能夠於短時間內將第二加熱部升溫。因此，即便於第一溫度與第二溫度之差相對較大之情形時，亦能夠縮短將基板之加熱溫度提高至第二溫度之期間之時間。 於上述基板加熱裝置中，上述第二加熱部之降溫速率亦可較上述第一加熱部之降溫速率更大。 根據該構成，和第二加熱部之降溫速率為與第一加熱部之降溫速率同等以下之情形相比，能夠於短時間內將第二加熱部降溫。因此，即便於以第二溫度加熱基板之後將基板冷卻之情形時，亦能夠縮短將基板之加熱溫度降低至冷卻溫度期間之時間。 於上述基板加熱裝置中，亦可進而包含腔室，該腔室能夠收容上述基板、上述第一加熱部及上述第二加熱部。 根據該構成，能夠於腔室內管理基板之加熱溫度，因此，能夠有效地加熱基板。 於上述基板加熱裝置中，上述基板、上述第一加熱部及上述第二加熱部亦可收容於共通之上述腔室。 根據該構成，能夠於共通之腔室內一次地進行對基板之利用第一加熱部所進行之加熱處理及利用第二加熱部所進行之加熱處理。即，無需如將第一加熱部及第二加熱部收容於互不相同之腔室之情形般用以於不同之2個腔室間搬送基板之時間。因此，能夠更加高效率地進行基板之加熱處理。又，與具備不同之2個腔室之情形相比，能夠將裝置整體小型化。 於上述基板加熱裝置中，亦可為，上述溶液僅塗佈於上述基板之第一面，上述第一加熱部配置於上述基板之與第一面為相反側之第二面之側。 根據該構成，自第一加熱部發出之熱自基板之第二面之側朝向第一面之側傳導，因此，能夠有效地加熱基板。又，於利用第一加熱部加熱基板期間，能夠高效率地進行塗佈於基板之溶液之揮發或醯亞胺化(例如，成膜中之排氣)。 於上述基板加熱裝置中，上述第二加熱部亦可配置於上述基板之第一面之側。 根據該構成，自第二加熱部發出之熱自基板之第一面之側朝向第二面之側傳導，因此，與利用第一加熱部所進行之加熱及利用第二加熱部所進行之加熱相輔相成，能夠更有效地加熱基板。 於上述基板加熱裝置中，亦可為，上述第一加熱部及上述第二加熱部之至少一者能夠階段性地加熱上述基板。 根據該構成，與第一加熱部及第二加熱部僅能夠以固定之溫度加熱基板之情形相比，能夠以適合塗佈於基板之溶液之成膜條件之方式，高效率地加熱基板。因此，能夠使塗佈於基板之溶液階段性地乾燥，良好地硬化。 於上述基板加熱裝置中，亦可進而包含位置調整部，該位置調整部能夠調整上述第一加熱部及上述第二加熱部之至少一者與上述基板之相對位置。 根據該構成，與不具備上述位置調整部之情形相比，變得易於調整基板之加熱溫度。例如，能夠於提高基板之加熱溫度之情形時使第一加熱部及第二加熱部與基板接近，於降低基板之加熱溫度之情形時使第一加熱部及第二加熱部與基板背離。因此，變得易於階段性地加熱基板。 於上述基板加熱裝置中，上述位置調整部亦可包含移動部，該移動部能夠使上述基板於上述第一加熱部與上述第二加熱部之間移動。 根據該構成，能夠藉由使基板於第一加熱部與第二加熱部之間移動，而於將第一加熱部及第二加熱部之至少一者配置於起始位置之狀態下，調整基板之加熱溫度。因此，無須另外設置能夠移動第一加熱部及第二加熱部之至少一者之裝置，因此，能夠以簡單之構成調整基板之加熱溫度。 於上述基板加熱裝置中，亦可為，於上述第一加熱部與上述第二加熱部之間，設置有能夠搬送上述基板之搬送部，且於上述搬送部，形成有能夠供上述移動部通過之通過部。 根據該構成，於使基板於第一加熱部與第二加熱部之間移動之情形時，能夠使通過部通過，因此無須將搬送部迂迴而使基板移動。因此，無須另外設置用以將搬送部迂迴而使基板移動之裝置，因此能夠以簡單之構成順利地進行基板之移動。 於上述基板加熱裝置中，亦可為，上述移動部包含複數個銷，該等複數個銷能夠支持上述基板之與第一面為相反側之第二面且能夠沿上述第二面之法線方向移動，且上述複數個銷之前端配置於與上述第二面平行之面內。 根據該構成，能夠於穩定地支持基板之狀態下加熱基板，因此能夠使塗佈於基板之溶液穩定地成膜。 於上述基板加熱裝置中，亦可為，於上述第一加熱部形成有將上述第一加熱部沿上述第二面之法線方向開口之複數個插通孔，且上述複數個銷之前端能夠經由上述複數個插通孔而抵接於上述第二面。 根據該構成，能夠於短時間內於複數個銷與第一加熱部之間進行基板之交接，因此能夠高效率地調整基板之加熱溫度。 於上述基板加熱裝置中，包含上述第一溫度之溫度範圍可為20℃以上且300℃以下之範圍。 根據該構成，能夠穩定地進行塗佈於基板之溶液之揮發或醯亞胺化，因此能夠提升膜特性。 於上述基板加熱裝置中，包含上述第二溫度之溫度範圍可為200℃以上且600℃以下之範圍。 根據該構成，能夠穩定地進行塗佈於基板之溶液之醯亞胺化時之分子鏈之重新排列，因此能夠提升膜特性。 於上述基板加熱裝置中，上述第一加熱部可為加熱板。 根據該構成，能夠使基板之加熱溫度於基板之面內均勻化，因此能夠提升膜特性。例如，能夠藉由於使加熱板之一面與基板之第二面抵接之狀態下加熱基板，而提高基板之加熱溫度之面內均勻性。 於上述基板加熱裝置中，上述第二加熱部可為紅外線加熱器。 根據該構成，能夠利用紅外線加熱而加熱基板，因此與第二加熱部為加熱板之情形相比，能夠於短時間內將基板升溫至第二溫度。又，能夠於使第二加熱部與基板背離之狀態下加熱基板(所謂之非接觸加熱)，因此能夠潔淨地保持基板(進行所謂之潔淨加熱)。 於上述基板加熱裝置中，上述紅外線加熱器之峰值波長範圍可為1.5 μm以上且4 μm以下之範圍。 根據該構成，由於1.5 μm以上且4 μm以下之範圍之波長與玻璃及水等之吸收波長一致，故而能夠更有效地加熱基板及塗佈於基板之溶液。 於上述基板加熱裝置中，亦可進而包含檢測部，該檢測部能夠檢測上述基板之溫度。 根據該構成，能夠即時掌握基板之溫度。例如，能夠藉由基於檢測部之檢測結果加熱基板，而抑制基板之溫度偏離目標值。 於上述基板加熱裝置中，亦可進而包含回收部，該回收部能夠回收自塗佈於上述基板之上述溶液揮發之溶劑。 根據該構成，能夠防止自溶液揮發之溶劑向工廠側排出。又，於將回收部連接於減壓部(真空泵)之管線之情形時，能夠防止自溶液揮發之溶劑再次液化而逆流至真空泵內。進而，能夠將自溶液揮發之溶劑作為下次使用之溶液之溶劑而進行再利用。 於上述基板加熱裝置中，亦可進而包含擺動部，該擺動部能夠擺動上述基板。 根據該構成，能夠一面使基板擺動，一面加熱基板，因此能夠提高基板之溫度均勻性。 本發明之一態樣之基板加熱方法之特徵在於包括：減壓步驟，其係將塗佈有用以形成聚醯亞胺之溶液之基板減壓；第一加熱步驟，其係以第一溫度加熱上述基板；及第二加熱步驟，其係以較上述第一溫度更高之第二溫度加熱上述基板；且於上述第二加熱步驟中，使用與上述第一加熱步驟中使用之第一加熱部個別獨立地設置之第二加熱部加熱上述基板。 根據該方法，第二加熱部與第一加熱部個別獨立地設置，因此，能夠將第二加熱部之升溫速率設為較第一加熱部之升溫速率更大，能夠使基板溫度於短時間內達到所需要之溫度。例如，能夠於使第一加熱部接近基板之前(具體而言，於基板投入時)，藉由減壓部將基板設為減壓氣體氛圍，並於保持該減壓氣體氛圍之狀態下，一面利用第一加熱部加熱基板，一面進而利用第二加熱部加熱基板。又，亦能夠於利用第一加熱部加熱基板期間，預先將第二加熱部升溫，而能夠以第二溫度加熱基板。因此，無須考慮將基板之加熱溫度自第一溫度提高至第二溫度期間之時間。因此，能夠將基板之加熱所需要之節拍時間縮短化。 於上述基板加熱方法中，於上述第二加熱步驟中，亦可將上述第二加熱部之升溫速率設為較上述第一加熱部之升溫速率更大。 根據該方法，和於第二加熱步驟中第二加熱部之升溫速率為與第一加熱部之升溫速率同等以下之情形相比，能夠於短時間內將第二加熱部升溫。因此，即便於第一溫度與第二溫度之差相對較大之情形時，亦能夠縮短將基板之加熱溫度提高至第二溫度期間之時間。 於上述基板加熱方法中，於上述第二加熱步驟中，亦可將上述第二加熱部之降溫速率設為較上述第一加熱部之降溫速率更大。 根據該方法，和於第二加熱步驟中第二加熱部之降溫速率為與第一加熱部之降溫速率同等以下之情形相比，能夠於短時間內將第二加熱部降溫。因此，即便於以第二溫度加熱基板之後將基板冷卻之情形時，亦能夠縮短將基板之加熱溫度降低至冷卻溫度期間之時間。 於上述基板加熱方法中，亦可為，於上述減壓步驟中，將上述基板自大氣壓減壓至500 Pa以下；於上述第一加熱步驟中，於保持上述減壓步驟之氣體氛圍之狀態下，於上述基板之溫度為150℃至300℃之範圍內，加熱上述基板直至塗佈於上述基板之上述溶液揮發或醯亞胺化為止；於上述第二加熱步驟中，於保持上述減壓步驟之氣體氛圍之狀態下，加熱上述基板直至上述基板之溫度自上述第一加熱步驟之溫度變為600℃以下為止。 根據該方法，能夠穩定地進行塗佈於基板之溶液之揮發或醯亞胺化，並且穩定地進行塗佈於基板之溶液之醯亞胺化時之分子鏈之重新排列，因此能夠提升膜特性。 於上述基板加熱方法中，於上述第一加熱步驟中，亦可將加熱上述基板之時間設為10 min以下。 根據該方法，能夠於短時間內穩定地進行塗佈於基板之溶液之揮發或醯亞胺化，因此能夠於短時間內提升膜特性。 於上述基板加熱方法中，於上述第二加熱步驟中，亦可將上述第二加熱部之升溫速率設為100℃/min以上而將上述基板升溫。 根據該方法，能夠於短時間內穩定地進行塗佈於基板之溶液之醯亞胺化時之分子鏈之重新排列，因此能夠於短時間內提升膜特性。 [發明之效果] 根據本發明，可提供一種能夠將基板之加熱所需要之節拍時間縮短化之基板加熱裝置及基板加熱方法。[Problem to be Solved by the Invention] Further, the heating step includes: a first step of evaporating the solvent at a relatively low temperature; and a second step of hardening the polyamic acid at a relatively high temperature . Therefore, there is a problem that it takes a long time to increase the heating temperature of the substrate from the temperature of the first step to the temperature of the second step, and there is a problem in shortening the tact time required for heating the substrate. In view of the above circumstances, an object of the present invention is to provide a substrate heating apparatus and a substrate heating method capable of shortening the tact time required for heating of a substrate. [Technical means for solving the problem] The substrate heating apparatus according to an aspect of the present invention includes a pressure reducing portion capable of decompressing a substrate coated with a solution for forming a polyimide, and a first heating portion, The substrate can be heated at a first temperature; and the second heating portion can heat the substrate at a second temperature higher than the first temperature; and the second heating portion and the first heating portion are separately provided separately . According to this configuration, since the second heating unit and the first heating unit are separately provided separately, the temperature increase rate of the second heating unit can be made larger than the temperature increase rate of the first heating unit, and the substrate temperature can be made in a short time. Reach the required temperature. For example, before the first heating unit is brought close to the substrate (specifically, when the substrate is loaded), the substrate can be made into a reduced-pressure gas atmosphere by the decompression portion, and while the decompressed gas atmosphere is maintained, The substrate is heated by the first heating unit, and the substrate is further heated by the second heating unit. Further, during heating of the substrate by the first heating unit, the second heating unit can be heated in advance, and the substrate can be heated at the second temperature. Therefore, it is not necessary to consider the time during which the heating temperature of the substrate is raised from the first temperature to the second temperature. Therefore, the tact time required for heating the substrate can be shortened. In the above substrate heating device, the temperature increase rate of the second heating portion may be larger than the temperature increase rate of the first heating portion. According to this configuration, it is possible to raise the temperature of the second heating unit in a short time as compared with the case where the temperature increase rate of the second heating unit is equal to or lower than the temperature increase rate of the first heating unit. Therefore, even when the difference between the first temperature and the second temperature is relatively large, the time during which the heating temperature of the substrate is raised to the second temperature can be shortened. In the above substrate heating device, the temperature decreasing rate of the second heating portion may be greater than the temperature decreasing rate of the first heating portion. According to this configuration, the second heating portion can be cooled in a short time as compared with the case where the temperature drop rate of the second heating portion is equal to or lower than the temperature drop rate of the first heating portion. Therefore, even when the substrate is cooled after the substrate is heated at the second temperature, the time during which the heating temperature of the substrate is lowered to the cooling temperature can be shortened. The substrate heating apparatus may further include a chamber that can accommodate the substrate, the first heating unit, and the second heating unit. According to this configuration, since the heating temperature of the substrate can be managed in the chamber, the substrate can be efficiently heated. In the above substrate heating apparatus, the substrate, the first heating unit, and the second heating unit may be housed in the common chamber. According to this configuration, the heat treatment by the first heating unit and the heat treatment by the second heating unit can be performed once in the common chamber. In other words, it is not necessary to transport the substrate between the two different chambers as in the case where the first heating unit and the second heating unit are accommodated in mutually different chambers. Therefore, the heat treatment of the substrate can be performed more efficiently. Moreover, the overall size of the apparatus can be reduced as compared with the case of having two different chambers. In the above substrate heating apparatus, the solution may be applied only to the first surface of the substrate, and the first heating unit may be disposed on a side of the second surface opposite to the first surface of the substrate. According to this configuration, since the heat emitted from the first heating portion is conducted from the side of the second surface of the substrate toward the side of the first surface, the substrate can be efficiently heated. Moreover, during the heating of the substrate by the first heating unit, volatilization or hydrazine imidization (for example, exhaust gas during film formation) of the solution applied to the substrate can be efficiently performed. In the above substrate heating apparatus, the second heating unit may be disposed on a side of the first surface of the substrate. According to this configuration, since the heat generated from the second heating portion is conducted from the side of the first surface of the substrate toward the side of the second surface, the heating by the first heating portion and the heating by the second heating portion are performed. Complementing each other, the substrate can be heated more efficiently. In the above substrate heating apparatus, at least one of the first heating unit and the second heating unit may be configured to heat the substrate stepwise. According to this configuration, the substrate can be efficiently heated in a manner suitable for the film formation conditions of the solution applied to the substrate, compared to the case where the first heating unit and the second heating unit can heat the substrate at a fixed temperature. Therefore, the solution applied to the substrate can be dried stepwise and cured. Further, the substrate heating device may further include a position adjusting unit that adjusts a position of at least one of the first heating unit and the second heating unit and the substrate. According to this configuration, it is easier to adjust the heating temperature of the substrate than in the case where the position adjusting unit is not provided. For example, when the heating temperature of the substrate is raised, the first heating portion and the second heating portion are brought close to the substrate, and when the heating temperature of the substrate is lowered, the first heating portion and the second heating portion are separated from the substrate. Therefore, it becomes easy to heat the substrate in stages. In the above substrate heating apparatus, the position adjusting unit may include a moving unit that can move the substrate between the first heating unit and the second heating unit. According to this configuration, the substrate can be adjusted while the substrate is moved between the first heating unit and the second heating unit, and at least one of the first heating unit and the second heating unit is disposed at the initial position. Heating temperature. Therefore, it is not necessary to separately provide a device capable of moving at least one of the first heating portion and the second heating portion. Therefore, the heating temperature of the substrate can be adjusted with a simple configuration. In the above-described substrate heating apparatus, a transport unit capable of transporting the substrate may be provided between the first heating unit and the second heating unit, and the transport unit may be configured to allow the moving unit to pass through Passing through the department. According to this configuration, when the substrate is moved between the first heating unit and the second heating unit, the passage portion can be passed. Therefore, the substrate is not required to be moved back. Therefore, it is not necessary to separately provide a device for moving the substrate by bypassing the conveying portion. Therefore, the substrate can be smoothly moved with a simple configuration. In the above substrate heating apparatus, the moving portion may include a plurality of pins, and the plurality of pins may support a second surface of the substrate opposite to the first surface and may be along a normal line of the second surface The direction is moved, and the front ends of the plurality of pins are disposed in a plane parallel to the second surface. According to this configuration, since the substrate can be heated while stably supporting the substrate, the solution applied to the substrate can be stably formed into a film. In the above substrate heating device, a plurality of insertion holes that open the first heating portion along a normal direction of the second surface may be formed in the first heating portion, and the plurality of pin front ends may be The second surface is abutted via the plurality of insertion holes. According to this configuration, since the substrate can be transferred between the plurality of pins and the first heating unit in a short time, the heating temperature of the substrate can be efficiently adjusted. In the above substrate heating apparatus, the temperature range including the first temperature may be in the range of 20 ° C or more and 300 ° C or less. According to this configuration, volatilization or hydrazine imidization of the solution applied to the substrate can be stably performed, so that the film properties can be improved. In the above substrate heating apparatus, the temperature range including the second temperature may be in a range of 200 ° C or more and 600 ° C or less. According to this configuration, the rearrangement of the molecular chains during the imidization of the solution applied to the substrate can be stably performed, so that the film properties can be improved. In the above substrate heating apparatus, the first heating unit may be a heating plate. According to this configuration, since the heating temperature of the substrate can be made uniform in the plane of the substrate, the film characteristics can be improved. For example, the in-plane uniformity of the heating temperature of the substrate can be improved by heating the substrate in a state in which one surface of the heating plate is brought into contact with the second surface of the substrate. In the above substrate heating apparatus, the second heating unit may be an infrared heater. According to this configuration, since the substrate can be heated by infrared heating, the substrate can be heated to the second temperature in a shorter time than in the case where the second heating portion is a heating plate. Moreover, since the substrate (so-called non-contact heating) can be heated while the second heating portion is separated from the substrate, the substrate can be cleanly held (so-called clean heating is performed). In the above substrate heating device, the infrared heater may have a peak wavelength range of 1.5 μm or more and 4 μm or less. According to this configuration, since the wavelength in the range of 1.5 μm or more and 4 μm or less coincides with the absorption wavelength of glass, water, or the like, the substrate and the solution applied to the substrate can be more efficiently heated. Further, the substrate heating apparatus may further include a detecting unit that can detect the temperature of the substrate. According to this configuration, the temperature of the substrate can be grasped at once. For example, it is possible to suppress the temperature of the substrate from deviating from the target value by heating the substrate based on the detection result of the detecting portion. Further, the substrate heating apparatus may further include a recovery unit that recovers a solvent volatilized from the solution applied to the substrate. According to this configuration, it is possible to prevent the solvent volatilized from the solution from being discharged to the factory side. Further, when the recovery unit is connected to the line of the pressure reducing unit (vacuum pump), it is possible to prevent the solvent volatilized from the solution from being liquefied again and to flow back into the vacuum pump. Further, the solvent volatilized from the solution can be reused as a solvent for the solution to be used next time. Further, the substrate heating device may further include an oscillating portion that can swing the substrate. According to this configuration, the substrate can be heated while the substrate is swung, so that the temperature uniformity of the substrate can be improved. A substrate heating method according to an aspect of the present invention includes a pressure reduction step of depressurizing a substrate coated with a solution for forming a polyimide, and a first heating step of heating at a first temperature And the second heating step of heating the substrate at a second temperature higher than the first temperature; and in the second heating step, using the first heating portion used in the first heating step The second heating unit, which is independently provided separately, heats the substrate. According to this method, since the second heating unit and the first heating unit are separately provided separately, the temperature increase rate of the second heating unit can be set to be higher than the temperature increase rate of the first heating unit, and the substrate temperature can be made in a short time. Reach the required temperature. For example, before the first heating unit is brought close to the substrate (specifically, when the substrate is loaded), the substrate can be made into a reduced-pressure gas atmosphere by the decompression portion, and while the decompressed gas atmosphere is maintained, The substrate is heated by the first heating unit, and the substrate is further heated by the second heating unit. Further, during heating of the substrate by the first heating unit, the second heating unit can be heated in advance, and the substrate can be heated at the second temperature. Therefore, it is not necessary to consider the time during which the heating temperature of the substrate is raised from the first temperature to the second temperature. Therefore, the tact time required for heating the substrate can be shortened. In the above substrate heating method, in the second heating step, the temperature increase rate of the second heating portion may be set to be larger than the temperature increase rate of the first heating portion. According to this method, it is possible to raise the temperature of the second heating unit in a short time as compared with the case where the temperature increase rate of the second heating unit in the second heating step is equal to or lower than the temperature increase rate of the first heating unit. Therefore, even when the difference between the first temperature and the second temperature is relatively large, the time during which the heating temperature of the substrate is raised to the second temperature can be shortened. In the above substrate heating method, in the second heating step, the temperature lowering rate of the second heating portion may be set to be larger than the temperature lowering rate of the first heating portion. According to this method, the second heating portion can be cooled in a short time as compared with the case where the temperature decreasing rate of the second heating portion in the second heating step is equal to or lower than the temperature lowering rate of the first heating portion. Therefore, even when the substrate is cooled after the substrate is heated at the second temperature, the time during which the heating temperature of the substrate is lowered to the cooling temperature can be shortened. In the substrate heating method, the substrate may be depressurized from atmospheric pressure to 500 Pa or less in the depressurizing step, and in the first heating step, in a state in which the gas atmosphere of the decompression step is maintained. And heating the substrate to a temperature of 150 ° C to 300 ° C in the range of the substrate until the solution coated on the substrate is volatilized or arniminated; in the second heating step, maintaining the depressurizing step In the state of the gas atmosphere, the substrate is heated until the temperature of the substrate becomes 600 ° C or lower from the temperature of the first heating step. According to this method, the volatilization or hydrazine imidization of the solution applied to the substrate can be stably performed, and the molecular chain realignment at the time of the imidization of the solution applied to the substrate can be stably performed, thereby improving the film characteristics. . In the above substrate heating method, in the first heating step, the time for heating the substrate may be 10 min or less. According to this method, volatilization or hydrazine imidation of the solution applied to the substrate can be stably performed in a short time, so that the film properties can be improved in a short time. In the above substrate heating method, in the second heating step, the temperature rise rate of the second heating portion may be set to 100 ° C/min or more to raise the temperature of the substrate. According to this method, the rearrangement of the molecular chains during the imidization of the solution applied to the substrate can be stably performed in a short time, so that the film properties can be improved in a short time. Advantageous Effects of Invention According to the present invention, it is possible to provide a substrate heating apparatus and a substrate heating method capable of shortening a tact time required for heating a substrate.

以下，參照圖式，對本發明之實施形態進行說明。於以下之說明中，設定XYZ正交座標系統，一面參照該XYZ正交座標系統，一面對各構件之位置關係進行說明。將水平面內之特定方向設為X方向，將於水平面內與X方向正交之方向設為Y方向，將與X方向及Y方向分別正交之方向(即鉛垂方向)設為Z方向。 (第一實施形態) ＜基板加熱裝置＞ 圖1係第一實施形態之基板加熱裝置1之立體圖。 如圖1所示，基板加熱裝置1具備腔室2、減壓部3、氣體供給部4、第一加熱部5、第二加熱部6、位置調整部7、搬送部8、檢測部9、回收部11、擺動部12及控制部15。控制部15總括控制基板加熱裝置1之構成元件。為了方便起見，於圖1中，利用二點鏈線表示腔室2、減壓部3、氣體供給部4及回收部11。 ＜腔室＞ 腔室2能夠收容基板10、第一加熱部5及第二加熱部6。基板10、第一加熱部5及第二加熱部6收容於共通之腔室2。腔室2形成為長方體之箱狀。具體而言，腔室2係由矩形板狀之頂板21、與頂板21對向之矩形板狀之底板22、及與頂板21及底板22之外周緣連接之矩形框狀之周壁23形成。例如，於周壁23之-X方向側，設置用以相對於腔室2進行基板10之搬入及搬出之基板搬入搬出口23a。 腔室2構成為能夠以密閉空間收容基板10。例如，藉由利用焊接等將頂板21、底板22及周壁23之各連接部無間隙地結合，能夠提高腔室2內之氣密性。 ＜減壓部＞ 減壓部3連接於底板22之-Y方向側之靠近基板搬入搬出口23a之角部。減壓部3能夠將腔室2內減壓。例如，減壓部3具備泵機構等減壓機構。例如，減壓機構具備真空泵13。再者，減壓部3之連接部位並不限定於底板22之-Y方向側之靠近基板搬入搬出口23a之角部。減壓部3只要連接於腔室2即可。 減壓部3能夠將塗佈有用以形成聚醯亞胺膜(聚醯亞胺)之溶液(以下稱為「聚醯亞胺形成用液」)之基板10減壓。例如，聚醯亞胺形成用液包含聚醯胺酸或聚醯亞胺粉末。聚醯亞胺形成用液僅塗佈於呈矩形板狀之基板10之第一面10a(上表面)。 ＜氣體供給部＞ 氣體供給部4連接於周壁23之+X方向側之靠近頂板21之角部。氣體供給部4能夠調整腔室2之內部氣體氛圍之狀態。氣體供給部4向腔室2內供給氮氣(N2 )、氦氣(He)、氬氣(Ar)等惰性氣體。再者，氣體供給部4之連接部位並不限定於周壁23之+X方向側之靠近頂板21之角部。氣體供給部4只要連接於腔室2即可。又，亦可於基板降溫時藉由供給氣體而用於基板冷卻。 利用氣體供給部4，能夠調整腔室2之內部氣體氛圍之氧氣濃度。腔室2之內部氣體氛圍之氧氣濃度(質量基準)越低越佳。具體而言，較佳為將腔室2之內部氣體氛圍之氧氣濃度設為100 ppm以下，更佳為設為20 ppm以下。 例如，如下所述，於將塗佈於基板10之聚醯亞胺形成用液硬化時之氣體氛圍中，藉由如此般將氧氣濃度設為較佳之上限以下，能夠易於進行聚醯亞胺形成用液之硬化。 ＜第一加熱部＞ 第一加熱部5配置於腔室2內之下方。第一加熱部5能夠以第一溫度加熱基板10。第一加熱部5能夠階段性地加熱基板10。例如，包含第一溫度之溫度範圍為20℃以上且300℃以下之範圍。第一加熱部5配置於基板10之與第一面10a為相反側之第二面10b(下表面)之側。 第一加熱部5呈矩形板狀(參照圖2)。第一加熱部5能夠對基板10自下方進行支持。第一加熱部5之上表面呈沿基板10之第一面10a之平坦面。例如，第一加熱部5係加熱板。 ＜第二加熱部＞ 第二加熱部6配置於腔室2內之上方。第二加熱部6能夠以較第一溫度更高之第二溫度加熱基板10。第二加熱部6與第一加熱部5個別獨立地設置。第二加熱部6能夠階段性地加熱基板10。例如，包含第二溫度之溫度範圍為200℃以上且600℃以下之範圍。第二加熱部6配置於基板10之第一面10a之側。 第二加熱部6支持於頂板21。第二加熱部6係於腔室2內靠近頂板21處固定於起始位置。例如，第二加熱部6係紅外線加熱器。例如，紅外線加熱器之峰值波長範圍為1.5 μm以上且4 μm以下之範圍。 第二加熱部6之升溫速率較第一加熱部5之升溫速率更大。第二加熱部6之降溫速率較第一加熱部5之降溫速率更大。 圖3係比較加熱板與紅外線加熱器之升溫速率所得之曲線圖。圖4係比較加熱板與紅外線加熱器之降溫速率所得之曲線圖。於圖3及圖4中，橫軸表示時間[sec]，縱軸表示溫度[℃]。又，符號HP表示加熱板之曲線，符號IR表示紅外線加熱器之曲線。 ＜加熱板及紅外線加熱器之升溫速率＞ 如圖3所示，加熱板HP之溫度隨時間經過緩慢地上升。例如，於加熱板HP之情形時，溫度自75℃變為250℃為止需要875 sec左右。例如，加熱板HP之升溫速率為0.2℃/sec左右。 另一方面，紅外線加熱器IR之溫度隨時間經過急遽地上升。例如，於紅外線加熱器IR之情形時，溫度自25℃變為375℃為止需要90 sec左右。例如，紅外線加熱器IR之升溫速率為4℃/sec左右。紅外線加熱器IR之升溫速率較加熱板HP之升溫速率更大。 ＜加熱板及紅外線加熱器之降溫速率＞ 如圖4所示，加熱板HP之溫度隨時間經過緩慢地下降。例如，於加熱板HP之情形時，溫度自250℃變為150℃為止需要2000 sec左右。例如，加熱板HP之降溫速率為0.05℃/sec左右。 另一方面，紅外線加熱器IR之溫度隨時間經過急遽地下降。例如，於紅外線加熱器IR之情形時，溫度自400℃變為150℃為止需要150 sec左右。例如，紅外線加熱器IR之降溫速率為2℃/sec左右。紅外線加熱器IR之降溫速率較加熱板HP之降溫速率更大。 ＜位置調整部＞ 如圖1所示，位置調整部7配置於腔室2之下方。位置調整部7能夠調整第一加熱部5及第二加熱部6與基板10之相對位置。位置調整部7具備移動部7a及驅動部7b。移動部7a係沿上下(Z方向)延伸之柱狀之構件。移動部7a之上端固定於第一加熱部5之下表面。驅動部7b能夠使移動部7a上下移動。移動部7a能夠使基板10於第一加熱部5與第二加熱部6之間移動。具體而言，移動部7a係於基板10載置於第一加熱部5之上表面之狀態下，藉由驅動部7b之驅動，而使基板10上下移動(參照圖6及圖7)。 驅動部7b配置於腔室2之外部。因此，即便伴隨驅動部7b之驅動產生了顆粒，亦能夠藉由將腔室2內設為密閉空間，而避免顆粒侵入至腔室2內。 ＜搬送部＞ 搬送部8於腔室2內，配置於第一加熱部5與第二加熱部6之間。搬送部8能夠搬送基板10。於搬送部8，形成有能夠供移動部7a通過之通過部8h。搬送部8具備沿作為基板10之搬送方向之X方向配置之複數個搬送輥8a。 複數個搬送輥8a係背離地配置於周壁23之+Y方向側及-Y方向側。通過部8h係周壁23之+Y方向側之搬送輥8a與周壁23之-Y方向側之搬送輥8a之間之空間。 例如，於周壁23之+Y方向側及-Y方向側之各者，沿X方向配置有沿Y方向延伸之複數個軸(未圖示)。各搬送輥8a形成為藉由驅動機構(未圖示)，繞各軸旋轉驅動。 圖2係用以對搬送輥8a、基板10及第一加熱部5之配置關係進行說明之圖。圖2相當於基板加熱裝置1之俯視圖。為了方便起見，於圖2中，以二點鏈線表示腔室2。 於圖2中，符號L1係周壁23之+Y方向側之搬送輥8a與周壁23之-Y方向側之搬送輥8a背離之間隔(以下稱為「輥背離間隔」)。又，符號L2係基板10之Y方向之長度(以下稱為「基板長度」)。又，符號L3係第一加熱部5之Y方向之長度(以下稱為「第一加熱部長度」)。 如圖2所示，輥背離間隔L1小於基板長度L2且大於第一加熱部長度L3(L3＜L1＜L2)。藉由使輥背離間隔L1大於第一加熱部長度L3，而使移動部7a能夠與第一加熱部5一併通過通過部8h(參照圖6及圖7)。 ＜檢測部＞ 如圖1所示，檢測部9於腔室2內配置於基板10之上方。檢測部9能夠檢測基板10之溫度。例如，檢測部9係非接觸溫度感測器。 ＜回收部＞ 回收部11連接於減壓部3(真空泵13)之管線。回收部11能夠回收自塗佈於基板10之聚醯亞胺形成用液揮發之溶劑。 ＜擺動部＞ 擺動部12於腔室2內配置於基板10之-X方向側。擺動部12能夠擺動基板10。例如，擺動部12係於基板10正被加熱之狀態下，使基板10於沿XY平面之方向或沿Z方向之方向擺動。再者，擺動部12之配置位置並不限定於腔室2內之基板10之-X方向側。例如，擺動部12亦可設置於位置調整部7。 ＜基板加熱方法＞ 接下來，對本實施形態之基板加熱方法進行說明。於本實施形態中，使用上述基板加熱裝置1加熱基板10。基板加熱裝置1之各部所進行之動作係由控制部15控制。 圖5係用以對第一實施形態之基板加熱裝置1之動作之一例進行說明之圖。圖6係繼圖5後之第一實施形態之基板加熱裝置1之動作說明圖。圖7係繼圖6後之第一實施形態之基板加熱裝置1之動作說明圖。圖8係用以對第一實施形態之基板加熱方法之處理條件之一例進行說明之圖。 為了方便起見，於圖5～圖7中，省略基板加熱裝置1之構成元件中之減壓部3、氣體供給部4、檢測部9、回收部11、擺動部12及控制部15之圖示。 於圖8中，橫軸表示時間，左側之縱軸表示腔室內壓力，右側之縱軸表示基板溫度。又，於橫軸上，符號T1表示進行減壓步驟之區間(以下稱為「減壓區間」)，符號T2表示進行第一加熱步驟之區間(以下稱為「第一加熱區間」)，符號T3表示進行第二加熱步驟之區間(以下稱為「第二加熱區間」)。又，符號Cp表示腔室內壓力之曲線，符號Ct表示基板溫度之曲線。 本實施形態之基板加熱方法包括減壓步驟、第一加熱步驟及第二加熱步驟。 於減壓步驟中，將塗佈有聚醯亞胺形成用液之基板10減壓。 如圖5所示，於減壓步驟中，基板10配置於搬送輥8a。又，於減壓步驟中，第一加熱部5位於靠近底板22之位置。於減壓步驟中，第一加熱部5及基板10以第一加熱部5之熱不會傳導至基板10之程度背離。於減壓步驟中，第一加熱部5之電源接通。例如，第一加熱部5之溫度成為250℃左右。另一方面，於減壓步驟中，第二加熱部6之電源斷開。 於減壓步驟中，將基板10自大氣壓減壓至500 Pa以下。例如，如圖8所示，於減壓區間T1內，使腔室內壓力自大氣壓逐漸下降至20 Pa。 於減壓步驟中，儘可能地降低腔室2之內部氣體氛圍之氧氣濃度。例如，於減壓步驟中，將腔室2內之真空度設為20 Pa以下。 於減壓步驟之後，於第一加熱步驟中，以第一溫度加熱基板10。 如圖6所示，於第一加熱步驟中，使第一加熱部5向上方移動，使基板10載置於第一加熱部5之上表面。藉此，第一加熱部5抵接於基板10之第二面10b，因此，第一加熱部5之熱直接傳導至基板10。例如，於第一加熱步驟中，第一加熱部5之溫度維持250℃。因此，基板溫度能夠上升至250℃。另一方面，於第一加熱步驟中，第二加熱部6之電源保持斷開之狀態。 再者，於第一加熱步驟中，第一加熱部5位於通過部8h(參照圖1)內。為了方便起見，於圖6中，利用二點鏈線表示移動前(減壓步驟時之位置)之第一加熱部5，利用實線表示移動後(第一加熱步驟時之位置)之第一加熱部5。 於第一加熱步驟中，於保持減壓步驟之氣體氛圍之狀態下，於基板溫度為150℃至300℃之範圍內，加熱基板10直至塗佈於基板10之聚醯亞胺形成用液揮發或醯亞胺化。例如，於第一加熱步驟中，將加熱基板10之時間設為10 min以下。具體而言，於第一加熱步驟中，將加熱基板10之時間設為3 min。 例如，如圖8所示，於第一加熱區間T2，使基板溫度自25℃緩慢地上升至250℃。 於第一加熱步驟之後，於第二加熱步驟中，以較第一溫度高之第二溫度加熱基板10。於第二加熱步驟中，使用與第一加熱步驟中使用之第一加熱部5個別獨立地設置之第二加熱部6加熱基板10。 如圖7所示，於第二加熱步驟中，使第一加熱部5移動至較第一加熱步驟時之位置更靠上方，使基板10接近第二加熱部6。例如，於第二加熱步驟中，第一加熱部5之溫度維持250℃。又，於第二加熱步驟中，將第二加熱部6之電源設為接通。例如，第二加熱部6能夠以450℃加熱基板10。因此，將基板溫度設為能夠上升至450℃。於第二加熱步驟中，相較於第一加熱步驟時，基板10更接近第二加熱部6，因此第二加熱部6之熱充分地傳導至基板10。 再者，於第二步驟中，第一加熱部5位於搬送輥8a(圖1所示之通過部8h)之上方且第二加熱部6之下方。為了方便起見，於圖7中，利用二點鏈線表示移動前(第一加熱步驟時之位置)之第一加熱部5，利用實線表示移動後(第二加熱步驟時之位置)之第一加熱部5。 於第二加熱步驟中，於保持減壓步驟之氣體氛圍之狀態下，加熱基板10直至基板溫度自第一加熱步驟之溫度變為600℃以下為止。於第二加熱步驟中，將第二加熱部6之升溫速率設為較第一加熱部5之升溫速率更大。例如，於第二加熱步驟中，將第二加熱部6之升溫速率設為100℃/min以上，而將基板10升溫。 例如，如圖8所示，於第二加熱區間T3，使基板溫度自250℃急遽地上升至450℃。又，於第二加熱區間T3，將腔室內壓力維持為20 Pa以下。 第二加熱步驟包括使基板10冷卻之冷卻步驟。例如，於冷卻步驟中，於保持減壓步驟之氣體氛圍或低氧氣體氛圍之狀態下，將基板10冷卻直至基板溫度自第二加熱步驟之溫度變為能夠搬送基板10之溫度為止。於冷卻步驟中，將第二加熱部6之電源設為斷開。於冷卻步驟中，將第二加熱部6之降溫速率設為較第一加熱部5之降溫速率更大。 藉由經過以上步驟，能夠進行塗佈於基板10之聚醯亞胺形成用液之揮發或醯亞胺化，並且進行塗佈於基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，而形成聚醯亞胺膜。 如上所述，根據本實施形態，第二加熱部6與第一加熱部5個別獨立地設置，因此，能夠將第二加熱部6之升溫速率設為較第一加熱部5之升溫速率更大，能夠使基板溫度於短時間內達到所需要之溫度。例如，能夠於使第一加熱部5接近基板10之前(具體而言，於基板投入時)，利用減壓部3將基板10設為減壓氣體氛圍，於保持該減壓氣體氛圍之狀態下，一面利用第一加熱部5加熱基板10，一面進而利用第二加熱部6加熱基板10。又，亦能夠於利用第一加熱部5加熱基板10期間，預先將第二加熱部6升溫，而能夠以第二溫度加熱基板10。因此，無須考慮將基板10之加熱溫度自第一溫度提高至第二溫度期間之時間。因此，能夠將基板10之加熱所需要之節拍時間縮短化。 又，藉由使第二加熱部6之升溫速率較第一加熱部5之升溫速率更大，而與第二加熱部6之升溫速率為與第一加熱部5之升溫速率同等以下之情形相比，能夠於短時間內將第二加熱部6升溫。因此，即便於第一溫度與第二溫度之差相對較大之情形時，亦能夠縮短將基板10之加熱溫度提高至第二溫度期間之時間。 又，藉由使第二加熱部6之降溫速率較第一加熱部5之降溫速率更大，而與第二加熱部6之降溫速率為與第一加熱部5之降溫速率同等以下之情形相比，能夠於短時間內將第二加熱部6降溫。因此，即便於以第二溫度加熱基板10之後將基板10冷卻之情形時，亦能夠縮短將基板10之加熱溫度降低至冷卻溫度期間之時間。 又，藉由進而包含能夠收容基板10、第一加熱部5及第二加熱部6之腔室2，能夠於腔室2內管理基板10之加熱溫度，因此，能夠有效地加熱基板10。 又，藉由將基板10、第一加熱部5及第二加熱部6收容於共通之腔室2，能夠於共通之腔室2內一次地進行對基板10之利用第一加熱部5所進行之加熱處理及利用第二加熱部6所進行之加熱處理。即，無需如將第一加熱部5及第二加熱部6收容於互不相同之腔室2之情形般用以於不同之兩個腔室2間搬送基板10之時間。因此，能夠更加高效率地進行基板10之加熱處理。又，與具備不同之兩個腔室2之情形相比，能夠將裝置整體小型化。 又，聚醯亞胺形成用液僅塗佈於基板10之第一面10a，藉由將第一加熱部5配置於基板10之與第一面10a為相反側之第二面10b之側，而使自第一加熱部5發出之熱自基板10之第二面10b之側朝向第一面10a之側傳導，因此能夠有效地加熱基板10。又，於利用第一加熱部5加熱基板10期間，能夠高效率地進行塗佈於基板10之聚醯亞胺形成用液之揮發或醯亞胺化(例如，成膜中之排氣)。 又，藉由將第二加熱部6配置於基板10之第一面10a之側，而使自第二加熱部6發出之熱自基板10之第一面10a之側朝向第二面10b之側傳導，因此，利用第一加熱部5所進行之加熱與利用第二加熱部6所進行之加熱相輔相成，能夠更有效地加熱基板10。 又，藉由使第一加熱部5及第二加熱部6兩者能夠階段性地加熱基板10，而與第一加熱部5及第二加熱部6能夠僅以固定之溫度加熱基板10之情形相比，能夠以適合塗佈於基板10之聚醯亞胺形成用液之成膜條件之方式，高效率地加熱基板10。因此，能夠使塗佈於基板10之聚醯亞胺形成用液階段性地乾燥，良好地硬化。 又，藉由進而包含能夠調整第一加熱部5及第二加熱部6與基板10之相對位置之位置調整部7，而與不具備上述位置調整部7之情形相比，變得易於調整基板10之加熱溫度。例如，能夠於提高基板10之加熱溫度之情形時，使第一加熱部5及第二加熱部6與基板10接近，於降低基板10之加熱溫度之情形時，使第一加熱部5及第二加熱部6與基板10背離。因此，變得易於階段性地加熱基板10。 又，位置調整部7包含能夠將基板10於第一加熱部5與第二加熱部6之間移動之移動部7a，藉此，能夠藉由使基板10於第一加熱部5與第二加熱部6之間移動，而於將第一加熱部5及第二加熱部6之至少一者配置於特定位置之狀態下，調整基板10之加熱溫度。因此，無須另外設置能夠移動第一加熱部5及第二加熱部6之至少一者之裝置，因此能夠以簡單之構成來調整基板10之加熱溫度。 又，於第一加熱部5與第二加熱部6之間，設置有能夠搬送基板10之搬送部8，於搬送部8，形成有能夠供移動部7a通過之通過部8h，藉此，於使基板10在第一加熱部5與第二加熱部6之間移動之情形時，能夠使基板10通過通過部8h，因此，無須將搬送部8迂迴而使基板10移動。因此，無須另外設置用以將搬送部8迂迴而使基板10移動之裝置，因此能夠以簡單之構成順利地進行基板10之移動。 又，藉由包含第一溫度之溫度範圍為20℃以上且300℃以下之範圍，能夠穩定地進行塗佈於基板10之聚醯亞胺形成用液之揮發或醯亞胺化，因此能夠提升膜特性。 又，藉由包含第二溫度之溫度範圍為200℃以上且600℃以下之範圍，能夠穩定地進行塗佈於基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，因此能夠提升膜特性。 又，藉由第一加熱部5為加熱板，能夠使基板10之加熱溫度於基板10之面內均勻化，因此能夠提升膜特性。例如，能夠藉由於使加熱板之一面與基板10之第二面10b抵接之狀態下加熱基板10，而提高基板10之加熱溫度之面內均勻性。 又，藉由第二加熱部6為紅外線加熱器，能夠利用紅外線加熱而加熱基板10，因此，與第二加熱部6為加熱板之情形相比，能夠將基板10於短時間內升溫至第二溫度。又，能夠於使第二加熱部6與基板10背離之狀態下加熱基板10(所謂之非接觸加熱)，因此能夠潔淨地保持基板10(進行所謂之潔淨加熱)。 又，藉由紅外線加熱器之峰值波長範圍為1.5 μm以上且4 μm以下之範圍，而由於1.5 μm以上且4 μm以下之範圍之波長與玻璃及水等之吸收波長一致，故而能夠更有效地加熱基板10及塗佈於基板10之聚醯亞胺形成用液。 又，藉由進而包含能夠檢測基板10之溫度之檢測部9，能夠即時掌握基板10之溫度。例如，藉由基於檢測部9之檢測結果加熱基板10，而能夠抑制基板10之溫度偏離目標值。 又，藉由進而包含能夠回收自塗佈於基板10之聚醯亞胺形成用液揮發之溶劑之回收部11，能夠防止自聚醯亞胺形成用液揮發之溶劑向工廠側排出。又，於將回收部11連接於減壓部3(真空泵13)之管線之情形時，能夠防止自聚醯亞胺形成用液揮發之溶劑再次液化而逆流至真空泵13內。進而，能夠將自聚醯亞胺形成用液揮發之溶劑作為下次使用之聚醯亞胺形成用液之溶劑而進行再利用。 又，藉由進而包含能夠擺動基板10之擺動部12，能夠一面使基板10擺動，一面加熱基板10，因此能夠提高基板10之溫度均勻性。 又，藉由於第二加熱步驟中，將第二加熱部6之升溫速率設為較第一加熱部5之升溫速率更大，而與於第二加熱步驟中第二加熱部6之升溫速率為與第一加熱部5之升溫速率同等以下之情形相比，能夠於短時間內將第二加熱部6升溫。因此，即便於第一溫度與第二溫度之差相對較大之情形時，亦能夠縮短將基板10之加熱溫度提高至第二溫度期間之時間。 又，藉由於冷卻步驟中，將第二加熱部6之降溫速率設為較第一加熱部5之降溫速率更大，而與於冷卻步驟中第二加熱部6之降溫速率為與第一加熱部5之降溫速率同等以下之情形相比，能夠於短時間內將第二加熱部6降溫。因此，即便於以第二溫度加熱基板10之後將基板10冷卻之情形時，亦能夠縮短將基板10之加熱溫度降低至冷卻溫度期間之時間。 又，於減壓步驟中，將基板10自大氣壓減壓至500 Pa以下；於第一加熱步驟中，於保持減壓步驟之氣體氛圍之狀態下，於基板10之溫度為150℃至300℃之範圍內，加熱基板10直至塗佈於基板10之聚醯亞胺形成用液揮發或醯亞胺化；於第二加熱步驟中，於保持減壓步驟之氣體氛圍之狀態下，加熱基板10直至基板10之溫度自第一加熱步驟之溫度變為600℃以下為止；藉此，發揮以下效果。根據該方法，能夠穩定地進行塗佈於基板10之聚醯亞胺形成用液之揮發或醯亞胺化，並且穩定地進行塗佈於基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，因此能夠提升膜特性。 又，藉由於第一加熱步驟中，將加熱基板10之時間設為10 min以下，能夠於短時間內穩定地進行塗佈於基板10之聚醯亞胺形成用液之揮發或醯亞胺化，因此能夠於短時間內提升膜特性。 又，藉由於第二加熱步驟中，將第二加熱部6之升溫速率設為100℃/min以上而將基板10升溫，能夠於短時間內穩定地進行塗佈於基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，因此能夠於短時間內提升膜特性。 (第二實施形態) 接下來，使用圖9～圖11對本發明之第二實施形態進行說明。 圖9係用以對第二實施形態之基板加熱裝置201之動作之一例進行說明之圖。圖10係繼圖9後之第二實施形態之基板加熱裝置201之動作說明圖。圖11係繼圖10後之第二實施形態之基板加熱裝置201之動作說明圖。 為了方便起見，於圖9～圖11中，省略基板加熱裝置201之構成元件中之減壓部3、氣體供給部4、搬送部8、檢測部9、回收部11、擺動部12及控制部15之圖示。 於第二實施形態中，相對於第一實施形態，位置調整部207之構成尤其不同。於圖9～圖11中，對與第一實施形態相同之構成標註相同之符號，並省略該構成之詳細之說明。 ＜位置調整部＞ 如圖9～圖11所示，位置調整部207具備收容部270、移動部275及驅動部279。 收容部270配置於腔室2之下側。收容部270能夠收容移動部275及驅動部279。收容部270形成為長方體之箱狀。具體而言，收容部270係由第一支持板271、第二支持板272及圍板273形成，該第一支持板271為矩形板狀，該第二支持板272為矩形板狀，與第一支持板271對向，該圍板273與第一支持板271及第二支持板272之外周緣連接，並且以包圍移動部275及驅動部279之周圍之方式覆蓋。 第一支持板271之外周緣連接於腔室2之周壁23之下端。第一支持板271亦作為腔室2之底板而發揮功能。於第一支持板271，配置有第一加熱部205。具體而言，第一加熱部205於腔室2內支持於第一支持板271。 圍板273與周壁23上下連續地連接。腔室2構成為能夠以密閉空間收容基板10。例如，能夠藉由利用焊接等將頂板21、作為底板之第一支持板271、及周壁23之各連接部無間隙地結合，而提高腔室2內之氣密性。 移動部275具備銷276、伸縮管277及基台278。 銷276能夠支持基板10之第二面10b且能夠沿第二面10b之法線方向(Z方向)移動。銷276係沿上下延伸之棒狀之構件。將銷276之前端(上端)設為能夠抵接於基板10之第二面10b且能夠自基板10之第二面10b背離。 銷276沿與第二面10b平行之方向(X方向及Y方向)隔開間隔而設置有複數個。複數個銷276分別形成為大致相同之長度。複數個銷276之前端配置於與第二面10b平行之面內(XY平面內)。 伸縮管277設置於第一支持板271與基台278之間。伸縮管277係以包圍銷276之周圍之方式覆蓋、並且沿上下延伸之管狀之構件。將伸縮管277設為於第一支持板271與基台278之間上下伸縮自如。例如，伸縮管277係真空波紋管。 伸縮管277以與複數個銷276相同個數之程度設置有複數個。複數個伸縮管277之前端(上端)固定於第一支持板271。具體而言，於第一支持板271，形成有將第一支持板271沿厚度方向開口之複數個插通孔271h。將各插通孔271h之內徑設為與各伸縮管277之外徑大致相同之大小。例如，各伸縮管277之前端嵌合固定於第一支持板271之各插通孔271h。 基台278係與第一支持板271對向之板狀之構件。基台278之上表面呈沿基板10之第二面10b之平坦面。於基台278之上表面，固定有複數個銷276之基端(下端)及複數個伸縮管277之基端(下端)。 將複數個銷276之前端設為能夠插通第一加熱部205。於第一加熱部205，於在第二面10b之法線方向上重疊於第一支持板271之各插通孔271h(各伸縮管277之內部空間)之位置，形成有將第一加熱部205於第二面10b之法線方向(加熱板之厚度方向)開口之複數個插通孔205h。 將複數個銷276之前端設為能夠經由各伸縮管277之內部空間及第一加熱部205之各插通孔205h而抵接於基板10之第二面10b。因此，利用複數個銷276之前端，將基板10平行於XY平面地進行支持。使複數個銷276一面支持收容於腔室2內之基板10，一面沿腔室2內之Z方向移動(參照圖9～圖11)。 驅動部279配置於為腔室2之外部之收容部270內。因此，即便伴隨驅動部279之驅動而產生了顆粒，亦能夠藉由將腔室2內設為密閉空間，而避免顆粒侵入至腔室2內。 ＜基板加熱方法＞ 接下來，對本實施形態之基板加熱方法進行說明。於本實施形態中，使用上述基板加熱裝置201加熱基板10。基板加熱裝置201之各部所進行之動作係由控制部15控制。再者，針對與第一實施形態相同之步驟，省略該步驟之詳細說明。 本實施形態之基板加熱方法包括減壓步驟、第一加熱步驟及第二加熱步驟。 於減壓步驟中，將塗佈有聚醯亞胺形成用液之基板10減壓。 如圖9所示，於減壓步驟中，基板10自第一加熱部205背離。具體而言，經由各伸縮管277之內部空間及第一加熱部205之各插通孔205h而使複數個銷276之前端抵接於基板10之第二面10b，並且使基板10上升，藉此使基板10自第一加熱部205背離。於減壓步驟中，第一加熱部205及基板10以第一加熱部205之熱不會傳導至基板10之程度背離。於減壓步驟中，第一加熱部205之電源接通。例如，第一加熱部205之溫度成為250℃左右。另一方面，於減壓步驟中，第二加熱部6之電源斷開。 於減壓步驟之後，於第一加熱步驟中，以第一加熱部205之溫度加熱基板10。 如圖10所示，於第一加熱步驟中，藉由使複數個銷276之前端自基板10之第二面10b背離，而使基板10抵接於第一加熱部205。即，使基板10載置於第一加熱部205之上表面。藉此，第一加熱部205抵接於基板10之第二面10b，因此，第一加熱部205之熱直接傳導至基板10。例如，於第一加熱步驟中，第一加熱部205之溫度維持250℃。因此，基板溫度被設為能夠上升至250℃。另一方面，於第一加熱步驟中，第二加熱部6之電源保持斷開之狀態。 於第一加熱步驟之後，於第二加熱步驟中，以第二溫度加熱基板10。 如圖11所示，於第二加熱步驟中，藉由使基板10較第一加熱步驟時之位置進而上升，而使基板10接近第二加熱部6。例如，於第二加熱步驟中，第一加熱部205之溫度維持250℃。又，於第二加熱步驟中，將第二加熱部6之電源設為接通。例如，第二加熱部6能夠以450℃加熱基板10。因此，基板溫度被設為能夠上升至450℃。於第二加熱步驟中，相較於第一加熱步驟時，基板10更接近第二加熱部6，因此，第二加熱部6之熱充分地傳導至基板10。 其後，藉由經過與第一實施形態相同之步驟，能夠進行塗佈於基板10之聚醯亞胺形成用液之揮發或醯亞胺化，並且進行塗佈於基板10之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，而形成聚醯亞胺膜。 如上所述，根據本實施形態，移動部275包含能夠支持基板10之第二面10b且能夠沿第二面10b之法線方向移動之複數個銷276，且複數個銷276之前端配置於與第二面10b平行之面內，藉此，能夠於穩定地支持基板10之狀態下加熱基板10，因此，能夠使塗佈於基板10之聚醯亞胺形成用液穩定地成膜。 又，於第一加熱部205，形成有將第一加熱部205於第二面10b之法線方向開口之複數個插通孔205h，且設為各銷276之前端能夠經由各插通孔205h而抵接於第二面10b，藉此能夠於短時間內於複數個銷276與第一加熱部205之間進行基板10之交接，因此能夠高效率地調整基板10之加熱溫度。 再者，於上述例中表示之各構成構件之各種形狀或組合等為一例，能夠基於設計要求等進行各種變更。 又，於上述實施形態中，基板、第一加熱部及第二加熱部收容於共通之腔室，但並不限定於此。例如，亦可將第一加熱部及第二加熱部收容於互不相同之腔室。 又，於上述實施形態中，第一加熱部及第二加熱部兩者能夠階段性地加熱基板，但並不限定於此。例如，亦可使第一加熱部及第二加熱部之至少一者能夠階段性地加熱基板。又，亦可使第一加熱部及第二加熱部兩者能夠僅以固定之溫度加熱基板。 又，於上述實施形態中，設為第一加熱部為加熱板，第二加熱部為紅外線加熱器，但並不限定於此。例如，亦可為第一加熱部及第二加熱部兩者為加熱板或紅外線加熱器。 又，於上述實施形態中，亦可將腔室之內壁設為能夠反射紅外線。例如，亦可將腔室之內壁設為由鋁等金屬形成之鏡面(反射面)。藉此，與將腔室之內壁設為能夠吸收紅外線之情形相比，能夠提高腔室內之溫度均勻性。 又，於上述實施形態中，使用複數個搬送輥作為搬送部，但並不限定於此。例如，作為搬送部，可使用帶式輸送機，亦可使用線性馬達致動器。例如，亦可設為能夠沿X方向添加帶式輸送機及線性馬達致動器。藉此，能夠調整X方向上之基板之搬送距離。 又，於作為搬送部採用除圖2所示之構成(於搬送部形成有通過部之構成)以外之構成之情形時，第一加熱部之俯視尺寸亦可為與基板之俯視尺寸同等以上。藉此，與第一加熱部之俯視尺寸較基板之俯視尺寸更小之情形相比，能夠進一步提高基板之加熱溫度之面內均勻性。 又，於上述實施形態中，於減壓步驟及第一加熱步驟中，第一加熱部之電源接通，第二加熱部之電源斷開，但並不限定於此。例如，於減壓步驟及第一加熱步驟中，亦可為第一加熱部及第二加熱部之電源接通。 再者，於上述中作為實施形態或其變化例而記載之各構成元件能夠於不脫離本發明主旨之範圍內適當組合，又，亦能夠設為適當地不使用所組合之複數個構成元件中之一部分構成元件。 [實施例] 以下，利用實施例對本發明更具體地進行說明，但本發明不受以下之實施例限定。 本發明者藉由以下之評價而確認到，藉由使用具備第一加熱部及與第一加熱部個別獨立地設置之第二加熱部之基板加熱裝置形成聚醯亞胺膜，能夠於短時間內提升膜特性。 (評價對象) 評價對象使用對塗佈有聚醯亞胺形成用液之基板利用下述之基板加熱裝置進行加熱處理等而形成之聚醯亞胺膜。基板使用日本電氣硝子股份有限公司製造之玻璃基板「OA-10」。聚醯亞胺膜之膜厚設為15 μm。 (比較例) 比較例之基板加熱裝置使用既有之烘箱。烘箱使用升溫速率為0.08℃/sec(4.9℃/min)、降溫速率為0.05℃/sec(2.8℃/min)者。於比較例中，不具備與第一加熱部個別獨立地設置之第二加熱部。 圖12係用以對比較例之處理條件進行說明之圖。圖12表示利用烘箱所進行之加熱處理時之溫度分佈之曲線圖。於圖12中，橫軸表示時間[min]，縱軸表示溫度[℃]。 於比較例中，首先向烘箱內供給氮氣，將烘箱內設為低氧氣體氛圍(氧氣濃度100 ppm)。 其次，於保持低氧氣體氛圍之狀態下，使烘箱溫度階段性地上升至180℃(階段式烘烤(step bake))，加熱基板直至塗佈於基板之聚醯亞胺形成用液揮發或醯亞胺化。 繼而，於保持低氧氣體氛圍之狀態下，使烘箱溫度上升至450℃，於維持特定時間之後，使烘箱溫度逐漸下降。藉此，進行塗佈於基板之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，從而形成聚醯亞胺膜。 於比較例中，於形成聚醯亞胺膜之前之處理時間為600 min。 (實施例) 實施例之基板加熱裝置使用具備第一加熱部及與第一加熱部個別獨立地設置之第二加熱部者(圖1所示之基板加熱裝置1)。第一加熱部使用加熱板，第二加熱部使用紅外線加熱器。加熱板使用升溫速率為0.2℃/sec、降溫速率為0.05℃/sec者。紅外線加熱器使用升溫速率為4℃/sec、降溫速率為2℃/sec者。 於實施例中，首先將腔室內減壓，設為真空度20 Pa(減壓步驟)。減壓步驟之處理時間設為2 min。 其次，於保持減壓氣體氛圍之狀態下，使基板溫度上升至200℃，加熱基板直至塗佈於基板之聚醯亞胺形成用液揮發或醯亞胺化(第一加熱步驟)。第一加熱步驟之處理時間設為10 min。 繼而，於保持減壓氣體氛圍之狀態下，使基板溫度階段性地上升至450℃之後，使基板溫度逐漸下降。藉此，進行塗佈於基板之聚醯亞胺形成用液之醯亞胺化時之分子鏈之重新排列，從而形成聚醯亞胺膜(第二加熱步驟)。第二加熱步驟之處理時間設為12.5 min。 再者，加熱板溫度自減壓步驟至第二加熱步驟為止維持250℃。又，紅外線加熱器僅於第二加熱步驟中升溫及降溫。具體而言，首先，於剛開始第二加熱步驟之後，便立即使紅外線加熱器於1 min內升溫直至基板溫度變為350℃為止，之後於該狀態下維持5 min，其後於1 min內升溫直至基板溫度變為450℃為止，於該時點降溫。 於實施例中，於形成聚醯亞胺膜之前之處理時間為24.5 min。 (膜特性之評價結果) 將藉由上述比較例及實施例而形成之聚醯胺膜之機械特性等膜特性之評價結果示於表1。再者，斷裂強度、斷裂伸長率、楊氏模數係使用ORIRNTEC公司製造之「RTC-1210A」來測定。 [表1] 作為評價對象，使用樣品A～C。樣品A～C之聚醯亞胺形成用液之種類互不相同。 如表1所示，於比較例及實施例之各者中，於樣品A～C之間獲得了不同之結果。 於樣品A之情形時，實施例相對於比較例於斷裂伸長率方面獲得了良好之結果。 於樣品B之情形時，實施例相對於比較例於斷裂強度、斷裂伸長率方面獲得了良好之結果。 於樣品C之情形時，實施例相對於比較例於斷裂強度、斷裂伸長率、楊氏模數方面獲得了良好之結果。 根據以上，已知藉由使用具備第一加熱部及與第一加熱部個別獨立地設置之第二加熱部之基板加熱裝置形成聚醯亞胺膜，能夠於短時間內提升膜特性。Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system. The specific direction in the horizontal plane is set to the X direction, and the direction orthogonal to the X direction in the horizontal plane is set to the Y direction, and the direction orthogonal to the X direction and the Y direction (that is, the vertical direction) is defined as the Z direction. (First Embodiment) <Substrate Heating Apparatus> Fig. 1 is a perspective view of a substrate heating apparatus 1 according to a first embodiment. As shown in FIG. 1, the substrate heating apparatus 1 includes a chamber 2, a pressure reducing unit 3, a gas supply unit 4, a first heating unit 5, a second heating unit 6, a position adjusting unit 7, a conveying unit 8, and a detecting unit 9, The recovery unit 11, the swing unit 12, and the control unit 15. The control unit 15 collectively controls the constituent elements of the substrate heating device 1. For the sake of convenience, in FIG. 1, the chamber 2, the pressure reducing portion 3, the gas supply portion 4, and the recovery portion 11 are indicated by a two-dot chain line. <Case> The chamber 2 can accommodate the substrate 10, the first heating unit 5, and the second heating unit 6. The substrate 10, the first heating unit 5, and the second heating unit 6 are housed in the common chamber 2. The chamber 2 is formed in a box shape of a rectangular parallelepiped. Specifically, the chamber 2 is formed of a rectangular plate-shaped top plate 21, a rectangular plate-shaped bottom plate 22 opposed to the top plate 21, and a rectangular frame-shaped peripheral wall 23 connected to the outer periphery of the top plate 21 and the bottom plate 22. For example, a substrate loading/unloading port 23a for carrying in and out the substrate 10 with respect to the chamber 2 is provided on the -X direction side of the peripheral wall 23. The chamber 2 is configured to be able to accommodate the substrate 10 in a sealed space. For example, by connecting the connection portions of the top plate 21, the bottom plate 22, and the peripheral wall 23 without a gap by welding or the like, the airtightness in the chamber 2 can be improved. <Decompression Unit> The pressure reduction unit 3 is connected to a corner portion of the bottom plate 22 on the Y-direction side near the substrate loading/unloading port 23a. The pressure reducing portion 3 can decompress the inside of the chamber 2. For example, the pressure reducing unit 3 is provided with a pressure reducing mechanism such as a pump mechanism. For example, the pressure reducing mechanism is provided with a vacuum pump 13. Further, the connection portion of the pressure reducing portion 3 is not limited to the corner portion of the bottom plate 22 on the -Y direction side near the substrate loading/unloading port 23a. The pressure reducing portion 3 only needs to be connected to the chamber 2. The pressure-reducing portion 3 can decompress the substrate 10 coated with a solution for forming a polyimide film (polyimine) (hereinafter referred to as "polyimine-forming liquid"). For example, the polyimine forming liquid contains polyamic acid or polyimine powder. The polyimine forming liquid is applied only to the first surface 10a (upper surface) of the substrate 10 having a rectangular plate shape. <Gas Supply Unit> The gas supply unit 4 is connected to a corner portion of the peripheral wall 23 on the +X direction side near the top plate 21. The gas supply unit 4 can adjust the state of the internal gas atmosphere of the chamber 2. The gas supply unit 4 supplies nitrogen gas into the chamber 2 (N 2 ), inert gas such as helium (He) or argon (Ar). Further, the connection portion of the gas supply portion 4 is not limited to the corner portion of the peripheral wall 23 on the +X direction side near the top plate 21. The gas supply unit 4 only needs to be connected to the chamber 2. Moreover, it can also be used for substrate cooling by supplying a gas when the substrate is cooled. The oxygen supply concentration in the internal gas atmosphere of the chamber 2 can be adjusted by the gas supply unit 4. The lower the oxygen concentration (mass basis) of the internal gas atmosphere of the chamber 2, the better. Specifically, it is preferable to set the oxygen concentration in the internal gas atmosphere of the chamber 2 to 100 ppm or less, and more preferably to 20 ppm or less. For example, as described below, in the gas atmosphere in which the polyimine-imiding liquid applied to the substrate 10 is cured, by setting the oxygen concentration to a preferred upper limit or lower, the formation of polyimine can be easily performed. Hardening with liquid. <First Heating Unit> The first heating unit 5 is disposed below the inside of the chamber 2 . The first heating portion 5 can heat the substrate 10 at a first temperature. The first heating unit 5 can heat the substrate 10 in stages. For example, the temperature range including the first temperature is in the range of 20 ° C or more and 300 ° C or less. The first heating unit 5 is disposed on the side of the second surface 10b (lower surface) of the substrate 10 opposite to the first surface 10a. The first heating unit 5 has a rectangular plate shape (see FIG. 2). The first heating unit 5 can support the substrate 10 from below. The upper surface of the first heating portion 5 has a flat surface along the first surface 10a of the substrate 10. For example, the first heating unit 5 is a heating plate. <Second Heating Unit> The second heating unit 6 is disposed above the inside of the chamber 2 . The second heating portion 6 is capable of heating the substrate 10 at a second temperature higher than the first temperature. The second heating unit 6 is provided separately from the first heating unit 5 independently. The second heating unit 6 can heat the substrate 10 in stages. For example, the temperature range including the second temperature is in the range of 200 ° C or more and 600 ° C or less. The second heating unit 6 is disposed on the side of the first surface 10a of the substrate 10. The second heating portion 6 is supported by the top plate 21. The second heating portion 6 is fixed in the chamber 2 to the starting position near the top plate 21. For example, the second heating unit 6 is an infrared heater. For example, the infrared heater has a peak wavelength range of 1. A range of 5 μm or more and 4 μm or less. The rate of temperature rise of the second heating portion 6 is greater than the rate of temperature rise of the first heating portion 5. The rate of temperature drop of the second heating portion 6 is greater than the rate of temperature drop of the first heating portion 5. Figure 3 is a graph comparing the heating rates of the hot plate and the infrared heater. Figure 4 is a graph comparing the cooling rate of the heating plate and the infrared heater. In FIGS. 3 and 4, the horizontal axis represents time [sec], and the vertical axis represents temperature [° C.]. Further, the symbol HP indicates a curve of the heating plate, and the symbol IR indicates a curve of the infrared heater. <Heating Rate of Heating Plate and Infrared Heater> As shown in Fig. 3, the temperature of the heating plate HP gradually rises with time. For example, in the case of heating the board HP, it takes about 875 sec to change the temperature from 75 ° C to 250 ° C. For example, the heating rate of the heating plate HP is 0. 2 ° C / sec or so. On the other hand, the temperature of the infrared heater IR rises sharply with time. For example, in the case of the infrared heater IR, it takes about 90 sec to change the temperature from 25 ° C to 375 ° C. For example, the heating rate of the infrared heater IR is about 4 ° C / sec. The heating rate of the infrared heater IR is higher than that of the heating plate HP. <The cooling rate of the heating plate and the infrared heater> As shown in Fig. 4, the temperature of the heating plate HP gradually decreases with time. For example, in the case of heating the board HP, it takes about 2000 sec to change the temperature from 250 ° C to 150 ° C. For example, the cooling rate of the heating plate HP is 0. 05 ° C / sec or so. On the other hand, the temperature of the infrared heater IR drops sharply with time. For example, in the case of the infrared heater IR, it takes about 150 sec to change the temperature from 400 ° C to 150 ° C. For example, the infrared heater IR has a temperature drop rate of about 2 ° C / sec. The infrared heater IR has a lower cooling rate than the heating plate HP. <Position Adjustment Unit> As shown in FIG. 1 , the position adjustment unit 7 is disposed below the chamber 2 . The position adjusting unit 7 can adjust the relative positions of the first heating unit 5 and the second heating unit 6 and the substrate 10 . The position adjustment unit 7 includes a movement unit 7a and a drive unit 7b. The moving portion 7a is a columnar member that extends in the upper and lower directions (Z direction). The upper end of the moving portion 7a is fixed to the lower surface of the first heating portion 5. The drive unit 7b can move the moving unit 7a up and down. The moving portion 7a can move the substrate 10 between the first heating portion 5 and the second heating portion 6. Specifically, the moving portion 7a is configured such that the substrate 10 is placed on the upper surface of the first heating portion 5, and the substrate 10 is moved up and down by driving the driving portion 7b (see FIGS. 6 and 7). The drive unit 7b is disposed outside the chamber 2. Therefore, even if particles are generated by the driving of the driving portion 7b, it is possible to prevent the particles from entering the chamber 2 by making the inside of the chamber 2 a closed space. <Transporting Unit> The conveying unit 8 is disposed between the first heating unit 5 and the second heating unit 6 in the chamber 2 . The transport unit 8 can transport the substrate 10 . The conveying portion 8 is formed with a passing portion 8h through which the moving portion 7a can pass. The conveying unit 8 includes a plurality of conveying rollers 8a arranged in the X direction which is the conveying direction of the substrate 10. The plurality of conveying rollers 8a are disposed away from the +Y direction side and the -Y direction side of the peripheral wall 23. The space between the transport roller 8a on the +Y direction side of the peripheral portion 23 of the portion 8h and the transport roller 8a on the Y-direction side of the peripheral wall 23 is formed. For example, in each of the +Y direction side and the -Y direction side of the peripheral wall 23, a plurality of axes (not shown) extending in the Y direction are arranged in the X direction. Each of the transport rollers 8a is formed to be rotationally driven around each axis by a drive mechanism (not shown). FIG. 2 is a view for explaining an arrangement relationship between the conveying roller 8a, the substrate 10, and the first heating unit 5. 2 corresponds to a plan view of the substrate heating device 1. For the sake of convenience, in Fig. 2, the chamber 2 is indicated by a two-dot chain line. In FIG. 2, the symbol L1 is a distance between the transport roller 8a on the +Y direction side of the peripheral wall 23 and the transport roller 8a on the Y-direction side of the peripheral wall 23 (hereinafter referred to as "roller separation interval"). Further, the symbol L2 is the length of the substrate 10 in the Y direction (hereinafter referred to as "substrate length"). Further, the symbol L3 is the length of the first heating portion 5 in the Y direction (hereinafter referred to as "the first heating portion length"). As shown in FIG. 2, the roller facing distance L1 is smaller than the substrate length L2 and larger than the first heating portion length L3 (L3 < L1 < L2). The moving portion 7a can pass through the passing portion 8h together with the first heating portion 5 by making the roller facing distance L1 larger than the first heating portion length L3 (see FIGS. 6 and 7). <Detection Unit> As shown in FIG. 1 , the detection unit 9 is disposed above the substrate 10 in the chamber 2 . The detecting unit 9 can detect the temperature of the substrate 10. For example, the detecting portion 9 is a non-contact temperature sensor. <Recycling Unit> The collecting unit 11 is connected to a line of the decompressing unit 3 (vacuum pump 13). The recovery unit 11 can recover the solvent volatilized from the polyimine-imiding liquid applied to the substrate 10. <Swinging Portion> The swinging portion 12 is disposed in the chamber 2 in the -X direction side of the substrate 10. The swing portion 12 can swing the substrate 10. For example, the swinging portion 12 swings the substrate 10 in the direction along the XY plane or in the Z direction while the substrate 10 is being heated. Further, the arrangement position of the swing portion 12 is not limited to the -X direction side of the substrate 10 in the chamber 2. For example, the swinging portion 12 may be provided in the position adjusting portion 7. <Substrate Heating Method> Next, the substrate heating method of the present embodiment will be described. In the present embodiment, the substrate 10 is heated by the substrate heating device 1. The operation performed by each unit of the substrate heating apparatus 1 is controlled by the control unit 15. Fig. 5 is a view for explaining an example of the operation of the substrate heating apparatus 1 of the first embodiment. Fig. 6 is an explanatory view showing the operation of the substrate heating apparatus 1 of the first embodiment, which is continued from Fig. 5; Fig. 7 is an explanatory view showing the operation of the substrate heating apparatus 1 of the first embodiment subsequent to Fig. 6. Fig. 8 is a view for explaining an example of processing conditions of the substrate heating method of the first embodiment. For the sake of convenience, in FIGS. 5 to 7 , the components of the pressure reducing portion 3, the gas supply portion 4, the detecting portion 9, the collecting portion 11, the swing portion 12, and the control portion 15 among the constituent elements of the substrate heating device 1 are omitted. Show. In Fig. 8, the horizontal axis represents time, the vertical axis on the left side represents the pressure in the chamber, and the vertical axis on the right side represents the substrate temperature. Further, on the horizontal axis, the symbol T1 indicates a section in which the pressure reduction step is performed (hereinafter referred to as "decompression section"), and the symbol T2 indicates a section in which the first heating step is performed (hereinafter referred to as "first heating section"), and the symbol T3 denotes a section in which the second heating step is performed (hereinafter referred to as "second heating section"). Further, the symbol Cp represents a curve of the pressure in the chamber, and the symbol Ct represents a curve of the substrate temperature. The substrate heating method of this embodiment includes a pressure reduction step, a first heating step, and a second heating step. In the depressurization step, the substrate 10 coated with the polyimide-forming liquid is decompressed. As shown in FIG. 5, in the decompression step, the substrate 10 is placed on the conveying roller 8a. Further, in the decompression step, the first heating portion 5 is located close to the bottom plate 22. In the depressurization step, the first heating portion 5 and the substrate 10 are separated from each other such that the heat of the first heating portion 5 is not conducted to the substrate 10. In the depressurization step, the power of the first heating unit 5 is turned on. For example, the temperature of the first heating unit 5 is about 250 °C. On the other hand, in the decompression step, the power of the second heating unit 6 is turned off. In the depressurization step, the substrate 10 is depressurized from atmospheric pressure to 500 Pa or less. For example, as shown in Fig. 8, in the decompression section T1, the pressure in the chamber is gradually decreased from atmospheric pressure to 20 Pa. In the depressurization step, the oxygen concentration of the internal gas atmosphere of the chamber 2 is reduced as much as possible. For example, in the depressurization step, the degree of vacuum in the chamber 2 is set to 20 Pa or less. After the depressurization step, in the first heating step, the substrate 10 is heated at the first temperature. As shown in FIG. 6, in the first heating step, the first heating portion 5 is moved upward, and the substrate 10 is placed on the upper surface of the first heating portion 5. Thereby, the first heating portion 5 abuts against the second surface 10b of the substrate 10, and therefore, the heat of the first heating portion 5 is directly transmitted to the substrate 10. For example, in the first heating step, the temperature of the first heating portion 5 is maintained at 250 °C. Therefore, the substrate temperature can be raised to 250 °C. On the other hand, in the first heating step, the power source of the second heating portion 6 is kept in the off state. Further, in the first heating step, the first heating portion 5 is located in the passing portion 8h (refer to FIG. 1). For the sake of convenience, in FIG. 6, the first heating portion 5 before the movement (the position at the time of the pressure reduction step) is indicated by a two-dot chain line, and the first line after the movement (the position at the time of the first heating step) is indicated by a solid line. A heating portion 5. In the first heating step, while maintaining the gas atmosphere of the depressurization step, the substrate 10 is heated in a range of a substrate temperature of 150 ° C to 300 ° C until the polyimine forming liquid applied to the substrate 10 is volatilized. Or ruthenium. For example, in the first heating step, the time for heating the substrate 10 is set to 10 min or less. Specifically, in the first heating step, the time for heating the substrate 10 was set to 3 min. For example, as shown in FIG. 8, in the first heating zone T2, the substrate temperature is slowly raised from 25 ° C to 250 ° C. After the first heating step, in the second heating step, the substrate 10 is heated at a second temperature that is higher than the first temperature. In the second heating step, the substrate 10 is heated using the second heating portion 6 which is provided separately from the first heating portion 5 used in the first heating step. As shown in FIG. 7, in the second heating step, the first heating portion 5 is moved to a position higher than the position at the time of the first heating step, so that the substrate 10 approaches the second heating portion 6. For example, in the second heating step, the temperature of the first heating portion 5 is maintained at 250 °C. Further, in the second heating step, the power of the second heating unit 6 is turned on. For example, the second heating unit 6 can heat the substrate 10 at 450 °C. Therefore, the substrate temperature is set to be able to rise to 450 °C. In the second heating step, the substrate 10 is closer to the second heating portion 6 than the first heating step, so that the heat of the second heating portion 6 is sufficiently conducted to the substrate 10. Further, in the second step, the first heating unit 5 is located above the conveying roller 8a (the passing portion 8h shown in FIG. 1) and below the second heating portion 6. For the sake of convenience, in FIG. 7, the first heating portion 5 before the movement (the position at the time of the first heating step) is indicated by a two-dot chain line, and the position after the movement (the position at the second heating step) is indicated by a solid line. The first heating portion 5. In the second heating step, the substrate 10 is heated while maintaining the gas atmosphere of the depressurization step until the substrate temperature is changed from the temperature of the first heating step to 600 ° C or lower. In the second heating step, the temperature increase rate of the second heating portion 6 is set to be larger than the temperature increase rate of the first heating portion 5. For example, in the second heating step, the temperature rise rate of the second heating unit 6 is set to 100 ° C / min or more, and the substrate 10 is heated. For example, as shown in FIG. 8, in the second heating zone T3, the substrate temperature is rapidly increased from 250 ° C to 450 ° C. Further, in the second heating zone T3, the pressure in the chamber is maintained at 20 Pa or less. The second heating step includes a cooling step of cooling the substrate 10. For example, in the cooling step, the substrate 10 is cooled while maintaining the gas atmosphere of the depressurization step or the low oxygen atmosphere until the substrate temperature is changed from the temperature of the second heating step to the temperature at which the substrate 10 can be transferred. In the cooling step, the power of the second heating unit 6 is turned off. In the cooling step, the temperature drop rate of the second heating portion 6 is set to be larger than the temperature drop rate of the first heating portion 5. By the above steps, volatilization or oxime imidization of the polyimine-imiding liquid applied to the substrate 10 can be performed, and the imidization of the polyimine-imiding liquid applied to the substrate 10 can be performed. The molecular chains are rearranged to form a polyimide film. As described above, according to the present embodiment, since the second heating unit 6 and the first heating unit 5 are separately provided separately, the temperature increase rate of the second heating unit 6 can be made larger than the temperature increase rate of the first heating unit 5. The substrate temperature can be reached to a desired temperature in a short time. For example, before the first heating unit 5 is brought close to the substrate 10 (specifically, when the substrate is loaded), the substrate 10 can be made into a reduced-pressure gas atmosphere by the decompression portion 3, and the decompressed gas atmosphere can be maintained. The substrate 10 is heated by the first heating unit 5, and the substrate 10 is further heated by the second heating unit 6. Further, during heating of the substrate 10 by the first heating unit 5, the second heating unit 6 can be heated in advance, and the substrate 10 can be heated at the second temperature. Therefore, it is not necessary to consider the time during which the heating temperature of the substrate 10 is raised from the first temperature to the second temperature. Therefore, the tact time required for heating the substrate 10 can be shortened. Further, by increasing the temperature increase rate of the second heating unit 6 by the temperature increase rate of the first heating unit 5, the temperature increase rate of the second heating unit 6 is equal to or lower than the temperature increase rate of the first heating unit 5. The temperature of the second heating unit 6 can be raised in a short time. Therefore, even when the difference between the first temperature and the second temperature is relatively large, the time during which the heating temperature of the substrate 10 is raised to the second temperature can be shortened. Further, by lowering the temperature drop rate of the second heating portion 6 by the temperature lowering rate of the first heating portion 5, the temperature drop rate of the second heating portion 6 is equal to or lower than the temperature drop rate of the first heating portion 5 The temperature of the second heating unit 6 can be lowered in a short time. Therefore, even when the substrate 10 is cooled after the substrate 10 is heated at the second temperature, the time during which the heating temperature of the substrate 10 is lowered to the cooling temperature can be shortened. Further, by further including the chamber 2 capable of accommodating the substrate 10, the first heating unit 5, and the second heating unit 6, the heating temperature of the substrate 10 can be managed in the chamber 2, so that the substrate 10 can be efficiently heated. Further, by accommodating the substrate 10, the first heating unit 5, and the second heating unit 6 in the common chamber 2, the first heating unit 5 can be performed on the substrate 10 once in the common chamber 2. The heat treatment and the heat treatment by the second heating unit 6 are performed. That is, it is not necessary to transport the substrate 10 between the two different chambers 2 as in the case where the first heating unit 5 and the second heating unit 6 are accommodated in the chambers 2 different from each other. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. Moreover, the overall size of the apparatus can be reduced as compared with the case where the two chambers 2 are different. Further, the polyimine-forming liquid is applied only to the first surface 10a of the substrate 10, and the first heating portion 5 is disposed on the side of the second surface 10b of the substrate 10 opposite to the first surface 10a. On the other hand, the heat generated from the first heating unit 5 is conducted from the side of the second surface 10b of the substrate 10 toward the side of the first surface 10a, so that the substrate 10 can be efficiently heated. In addition, during the heating of the substrate 10 by the first heating unit 5, volatilization or hydrazine imidization (for example, exhaust gas during film formation) of the polyimine-imiding liquid applied to the substrate 10 can be efficiently performed. Further, by disposing the second heating portion 6 on the side of the first surface 10a of the substrate 10, the heat generated from the second heating portion 6 is directed from the side of the first surface 10a of the substrate 10 toward the side of the second surface 10b. Since conduction is performed by the heating by the first heating unit 5 and the heating by the second heating unit 6, the substrate 10 can be heated more efficiently. Further, by heating the substrate 10 in both the first heating unit 5 and the second heating unit 6, the first heating unit 5 and the second heating unit 6 can heat the substrate 10 only at a fixed temperature. In contrast, the substrate 10 can be efficiently heated in a manner suitable for the film formation conditions of the polyimine-imiding liquid applied to the substrate 10. Therefore, the polyimine-imiding liquid applied to the substrate 10 can be dried stepwise and cured. Further, by further including the position adjusting unit 7 capable of adjusting the relative positions of the first heating unit 5 and the second heating unit 6 and the substrate 10, it is easier to adjust the substrate than when the position adjusting unit 7 is not provided. 10 heating temperature. For example, when the heating temperature of the substrate 10 is raised, the first heating unit 5 and the second heating unit 6 are brought close to the substrate 10, and when the heating temperature of the substrate 10 is lowered, the first heating unit 5 and the first heating unit are provided. The heating portion 6 faces away from the substrate 10. Therefore, it becomes easy to heat the substrate 10 in stages. Further, the position adjusting unit 7 includes a moving portion 7a capable of moving the substrate 10 between the first heating unit 5 and the second heating unit 6, whereby the substrate 10 can be heated by the first heating unit 5 and the second heating unit 5 The portion 6 is moved between the portions 6, and at least one of the first heating portion 5 and the second heating portion 6 is placed at a specific position, and the heating temperature of the substrate 10 is adjusted. Therefore, since it is not necessary to separately provide a device capable of moving at least one of the first heating unit 5 and the second heating unit 6, the heating temperature of the substrate 10 can be adjusted with a simple configuration. Further, between the first heating unit 5 and the second heating unit 6, a conveying unit 8 capable of conveying the substrate 10 is provided, and in the conveying unit 8, a passing portion 8h through which the moving unit 7a can pass is formed, thereby When the substrate 10 is moved between the first heating unit 5 and the second heating unit 6, the substrate 10 can pass through the passing portion 8h, so that the substrate 10 does not have to be moved back. Therefore, it is not necessary to separately provide a device for moving the substrate 10 by bypassing the transport unit 8, and therefore, the substrate 10 can be smoothly moved with a simple configuration. In addition, since the temperature range including the first temperature is in the range of 20° C. or higher and 300° C. or lower, the volatilization or hydrazine imidization of the polyimine-imiding liquid applied to the substrate 10 can be stably performed, so that the temperature can be improved. Membrane properties. Further, by the temperature range including the second temperature being in the range of 200 ° C or more and 600 ° C or less, the molecular chain re-imidation during the imidization of the polyimine-imiding liquid applied to the substrate 10 can be stably performed. Arranged, thus improving film properties. Further, since the first heating unit 5 is a heating plate, the heating temperature of the substrate 10 can be made uniform in the plane of the substrate 10, so that the film characteristics can be improved. For example, the in-plane uniformity of the heating temperature of the substrate 10 can be improved by heating the substrate 10 in a state in which one surface of the heating plate is brought into contact with the second surface 10b of the substrate 10. Further, since the second heating unit 6 is an infrared heater, the substrate 10 can be heated by infrared heating. Therefore, the substrate 10 can be heated up to a shorter time than when the second heating unit 6 is a heating plate. Two temperatures. Moreover, since the substrate 10 (so-called non-contact heating) can be heated while the second heating unit 6 is separated from the substrate 10, the substrate 10 can be cleanly held (so-called clean heating is performed). Moreover, the peak wavelength range of the infrared heater is 1. 5 μm or more and 4 μm or less, due to 1. The wavelength in the range of 5 μm or more and 4 μm or less is equal to the absorption wavelength of glass, water, or the like, so that the substrate 10 and the polyimine-imiding liquid applied to the substrate 10 can be more efficiently heated. Further, by further including the detecting unit 9 capable of detecting the temperature of the substrate 10, the temperature of the substrate 10 can be immediately grasped. For example, by heating the substrate 10 based on the detection result of the detecting portion 9, it is possible to suppress the temperature of the substrate 10 from deviating from the target value. Further, by further including the recovery unit 11 capable of recovering the solvent volatilized from the polyimine-imiding liquid applied to the substrate 10, it is possible to prevent the solvent volatilized from the polyimide-forming liquid from being discharged to the factory side. In the case where the recovery unit 11 is connected to the line of the pressure reducing unit 3 (vacuum pump 13), it is possible to prevent the solvent volatilized from the polyimide-forming liquid from being liquefied again and to flow back into the vacuum pump 13. Further, the solvent which is volatilized from the polyimine-imiding liquid can be reused as a solvent for the polyimine-imiding liquid to be used next time. Further, by further including the swing portion 12 that can swing the substrate 10, the substrate 10 can be heated while the substrate 10 is swung, so that the temperature uniformity of the substrate 10 can be improved. Further, in the second heating step, the temperature increase rate of the second heating portion 6 is set to be higher than the temperature increase rate of the first heating portion 5, and the temperature increase rate of the second heating portion 6 in the second heating step is The second heating unit 6 can be heated in a shorter time than in the case where the temperature rise rate of the first heating unit 5 is equal to or lower than the temperature. Therefore, even when the difference between the first temperature and the second temperature is relatively large, the time during which the heating temperature of the substrate 10 is raised to the second temperature can be shortened. Moreover, by the cooling step, the temperature drop rate of the second heating portion 6 is set to be larger than the temperature lowering rate of the first heating portion 5, and the cooling rate of the second heating portion 6 is the first heating rate during the cooling step. The second heating unit 6 can be cooled in a short time as compared with the case where the temperature drop rate of the unit 5 is equal to or lower than the above. Therefore, even when the substrate 10 is cooled after the substrate 10 is heated at the second temperature, the time during which the heating temperature of the substrate 10 is lowered to the cooling temperature can be shortened. Further, in the depressurization step, the substrate 10 is decompressed from atmospheric pressure to 500 Pa or less; in the first heating step, the temperature of the substrate 10 is 150 ° C to 300 ° C while maintaining the gas atmosphere of the depressurization step. In the range of heating, the substrate 10 is heated until the polyimine-forming liquid applied to the substrate 10 is volatilized or yttrium-imided; in the second heating step, the substrate 10 is heated while maintaining the gas atmosphere of the depressurizing step. The temperature of the substrate 10 is changed from the temperature of the first heating step to 600 ° C or lower; thereby, the following effects are exhibited. According to this method, the volatilization of the polyimine-imiding liquid applied to the substrate 10 can be stably performed, and the imide of the polyimine-imiding liquid applied to the substrate 10 can be stably performed. The rearrangement of the molecular chains during the crystallization can improve the film properties. In addition, in the first heating step, the time for heating the substrate 10 is 10 minutes or shorter, and the volatilization or ruthenium imidization of the polyimine-imiding liquid applied to the substrate 10 can be stably performed in a short time. Therefore, it is possible to improve the film properties in a short time. In addition, in the second heating step, the temperature rise rate of the second heating unit 6 is set to 100° C./min or more, and the substrate 10 is heated, whereby the polyimine coated on the substrate 10 can be stably applied in a short time. The rearrangement of the molecular chains in the imidization of the liquid to be formed can improve the film properties in a short time. (Second embodiment) Next, a second embodiment of the present invention will be described with reference to Figs. 9 to 11 . Fig. 9 is a view for explaining an example of the operation of the substrate heating apparatus 201 of the second embodiment. Fig. 10 is an explanatory view showing the operation of the substrate heating apparatus 201 of the second embodiment, which is continued from Fig. 9; Fig. 11 is an explanatory view showing the operation of the substrate heating apparatus 201 of the second embodiment, which is continued from Fig. 10; For the sake of convenience, in FIGS. 9 to 11 , the pressure reducing unit 3, the gas supply unit 4, the conveying unit 8, the detecting unit 9, the collecting unit 11, the swinging unit 12, and the control in the constituent elements of the substrate heating device 201 are omitted. Illustration of section 15. In the second embodiment, the configuration of the position adjusting unit 207 is particularly different from that of the first embodiment. In FIGS. 9 to 11, the same components as those in the first embodiment are denoted by the same reference numerals, and the detailed description of the configuration will be omitted. <Position Adjustment Unit> As shown in FIGS. 9 to 11 , the position adjustment unit 207 includes an accommodation unit 270 , a movement unit 275 , and a drive unit 279 . The accommodating portion 270 is disposed on the lower side of the chamber 2. The accommodating portion 270 can accommodate the moving portion 275 and the driving portion 279. The accommodating portion 270 is formed in a box shape of a rectangular parallelepiped. Specifically, the accommodating portion 270 is formed by the first support plate 271, the second support plate 272, and the louver 273. The first support plate 271 has a rectangular plate shape, and the second support plate 272 has a rectangular plate shape. A support plate 271 is opposed to the outer periphery of the first support plate 271 and the second support plate 272, and is covered so as to surround the moving portion 275 and the periphery of the driving portion 279. The outer periphery of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2. The first support plate 271 also functions as a bottom plate of the chamber 2. The first heating portion 205 is disposed on the first support plate 271. Specifically, the first heating portion 205 is supported by the first support plate 271 in the chamber 2 . The shroud 273 is continuously connected to the peripheral wall 23 in a vertical direction. The chamber 2 is configured to be able to accommodate the substrate 10 in a sealed space. For example, the airtightness in the chamber 2 can be improved by joining the top plate 21, the first support plate 271 as the bottom plate, and the connection portions of the peripheral wall 23 without any gap by welding or the like. The moving unit 275 includes a pin 276, a telescopic tube 277, and a base 278. The pin 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a rod-like member that extends up and down. The front end (upper end) of the pin 276 is made to be able to abut against the second surface 10b of the substrate 10 and can be separated from the second surface 10b of the substrate 10. The pin 276 is provided in plural in a direction parallel to the second surface 10b (X direction and Y direction). The plurality of pins 276 are each formed to have substantially the same length. The front ends of the plurality of pins 276 are disposed in a plane parallel to the second surface 10b (in the XY plane). The extension tube 277 is disposed between the first support plate 271 and the base 278. The bellows 277 is a tubular member that covers the periphery of the pin 276 and extends up and down. The extension tube 277 is formed to be vertically expandable and contractable between the first support plate 271 and the base 278. For example, the telescopic tube 277 is a vacuum bellows. The telescopic tube 277 is provided in plural numbers to the same number as the plurality of pins 276. The front end (upper end) of the plurality of telescopic tubes 277 is fixed to the first support plate 271. Specifically, in the first support plate 271, a plurality of insertion holes 271h that open the first support plate 271 in the thickness direction are formed. The inner diameter of each of the insertion holes 271h is set to be substantially the same as the outer diameter of each of the bellows 277. For example, the front end of each of the telescopic tubes 277 is fitted and fixed to each of the insertion holes 271h of the first support plate 271. The base 278 is a plate-shaped member that faces the first support plate 271. The upper surface of the base 278 is a flat surface along the second surface 10b of the substrate 10. On the upper surface of the base 278, a base end (lower end) of a plurality of pins 276 and a base end (lower end) of a plurality of extension tubes 277 are fixed. The front end of the plurality of pins 276 is configured to be able to be inserted into the first heating portion 205. The first heating unit 205 is formed at a position overlapping the insertion holes 271h (the internal spaces of the respective extension tubes 277) of the first support plate 271 in the normal direction of the second surface 10b, and the first heating portion is formed. 205 is a plurality of insertion holes 205h that are opened in the normal direction of the second surface 10b (the thickness direction of the heating plate). The front ends of the plurality of pins 276 are made to be able to abut against the second surface 10b of the substrate 10 via the internal space of each of the extension tubes 277 and the insertion holes 205h of the first heating unit 205. Therefore, the substrate 10 is supported parallel to the XY plane by the front ends of the plurality of pins 276. The plurality of pins 276 are supported to move in the Z direction in the chamber 2 while supporting the substrate 10 housed in the chamber 2 (see FIGS. 9 to 11). The drive unit 279 is disposed in the housing portion 270 that is outside the chamber 2 . Therefore, even if particles are generated in association with the driving of the driving unit 279, it is possible to prevent the particles from entering the chamber 2 by making the inside of the chamber 2 a closed space. <Substrate Heating Method> Next, the substrate heating method of the present embodiment will be described. In the present embodiment, the substrate 10 is heated by the substrate heating device 201 described above. The operation performed by each unit of the substrate heating device 201 is controlled by the control unit 15. Further, the detailed description of the steps will be omitted for the same steps as those of the first embodiment. The substrate heating method of this embodiment includes a pressure reduction step, a first heating step, and a second heating step. In the depressurization step, the substrate 10 coated with the polyimide-forming liquid is decompressed. As shown in FIG. 9, in the decompression step, the substrate 10 faces away from the first heating portion 205. Specifically, the front end of the plurality of pins 276 abuts against the second surface 10b of the substrate 10 via the internal space of each of the extension tubes 277 and the insertion holes 205h of the first heating unit 205, and the substrate 10 is raised. This causes the substrate 10 to face away from the first heating portion 205. In the depressurization step, the first heating portion 205 and the substrate 10 are separated from each other such that the heat of the first heating portion 205 is not conducted to the substrate 10. In the depressurization step, the power of the first heating unit 205 is turned on. For example, the temperature of the first heating unit 205 is about 250 °C. On the other hand, in the decompression step, the power of the second heating unit 6 is turned off. After the depressurization step, in the first heating step, the substrate 10 is heated at the temperature of the first heating portion 205. As shown in FIG. 10, in the first heating step, the substrate 10 is brought into contact with the first heating portion 205 by causing the front ends of the plurality of pins 276 to face away from the second surface 10b of the substrate 10. That is, the substrate 10 is placed on the upper surface of the first heating portion 205. Thereby, the first heating portion 205 abuts against the second surface 10b of the substrate 10, and therefore, the heat of the first heating portion 205 is directly transmitted to the substrate 10. For example, in the first heating step, the temperature of the first heating portion 205 is maintained at 250 °C. Therefore, the substrate temperature is set to be able to rise to 250 °C. On the other hand, in the first heating step, the power source of the second heating portion 6 is kept in the off state. After the first heating step, in the second heating step, the substrate 10 is heated at the second temperature. As shown in FIG. 11, in the second heating step, the substrate 10 is brought closer to the second heating portion 6 by raising the position of the substrate 10 from the first heating step. For example, in the second heating step, the temperature of the first heating portion 205 is maintained at 250 °C. Further, in the second heating step, the power of the second heating unit 6 is turned on. For example, the second heating unit 6 can heat the substrate 10 at 450 °C. Therefore, the substrate temperature is set to be able to rise to 450 °C. In the second heating step, the substrate 10 is closer to the second heating portion 6 than the first heating step, and therefore, the heat of the second heating portion 6 is sufficiently conducted to the substrate 10. Thereafter, by the same procedure as in the first embodiment, volatilization or oxime imidization of the polyimine-imiding liquid applied to the substrate 10 can be performed, and the polyimine coated on the substrate 10 can be applied. The molecular chain of the imidization of the liquid is formed to rearrange the molecular chains to form a polyimide film. As described above, according to the present embodiment, the moving portion 275 includes a plurality of pins 276 capable of supporting the second surface 10b of the substrate 10 and movable in the normal direction of the second surface 10b, and the front ends of the plurality of pins 276 are disposed at Since the substrate 10 can be heated in a state in which the substrate 10 is stably supported by the second surface 10b in parallel, the liquid for forming a polyimide which is applied to the substrate 10 can be stably formed. Further, in the first heating unit 205, a plurality of insertion holes 205h that open the first heating unit 205 in the normal direction of the second surface 10b are formed, and the front ends of the pins 276 can pass through the respective insertion holes 205h. The contact with the second surface 10b allows the substrate 10 to be transferred between the plurality of pins 276 and the first heating unit 205 in a short time. Therefore, the heating temperature of the substrate 10 can be efficiently adjusted. In addition, various shapes, combinations, and the like of the respective constituent members shown in the above examples are merely examples, and various modifications can be made based on design requirements and the like. Further, in the above embodiment, the substrate, the first heating unit, and the second heating unit are housed in the common chamber, but the invention is not limited thereto. For example, the first heating unit and the second heating unit may be housed in mutually different chambers. Further, in the above embodiment, the first heating unit and the second heating unit can heat the substrate stepwise, but the invention is not limited thereto. For example, at least one of the first heating unit and the second heating unit may be configured to heat the substrate stepwise. Further, both the first heating portion and the second heating portion can be used to heat the substrate only at a fixed temperature. Further, in the above embodiment, the first heating unit is a heating plate, and the second heating unit is an infrared heater. However, the present invention is not limited thereto. For example, both the first heating unit and the second heating unit may be a hot plate or an infrared heater. Further, in the above embodiment, the inner wall of the chamber may be made to reflect infrared rays. For example, the inner wall of the chamber may be a mirror surface (reflecting surface) formed of a metal such as aluminum. Thereby, the temperature uniformity in the chamber can be improved as compared with the case where the inner wall of the chamber is capable of absorbing infrared rays. Further, in the above embodiment, a plurality of conveying rollers are used as the conveying portion, but the invention is not limited thereto. For example, a belt conveyor may be used as the conveying unit, or a linear motor actuator may be used. For example, it is also possible to add a belt conveyor and a linear motor actuator in the X direction. Thereby, the conveyance distance of the board|substrate in the X direction can be adjusted. In addition, when the configuration other than the configuration shown in FIG. 2 (the configuration in which the passage portion is formed in the transport portion) is employed as the transport portion, the plan view size of the first heating portion may be equal to or larger than the plan view size of the substrate. Thereby, the in-plane uniformity of the heating temperature of the substrate can be further improved as compared with the case where the plan view size of the first heating portion is smaller than the plan view size of the substrate. Further, in the above embodiment, in the depressurization step and the first heating step, the power of the first heating unit is turned on, and the power of the second heating unit is turned off, but the power is not limited thereto. For example, in the depressurization step and the first heating step, the power sources of the first heating unit and the second heating unit may be turned on. In addition, each of the constituent elements described in the above-described embodiments or their modifications can be appropriately combined without departing from the scope of the present invention, and it is also possible to appropriately use a plurality of constituent elements that are combined. Some of them constitute components. EXAMPLES Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited by the following examples. The present inventors have confirmed by the following evaluation that a polyimide film can be formed by using a substrate heating device including a first heating unit and a second heating unit that is separately provided from the first heating unit, and can be used in a short time. Inner lifting film properties. (Evaluation target) A polyimide film formed by heat treatment or the like using a substrate heating device to be applied to a substrate on which a polyimide-forming liquid is applied is used. The glass substrate "OA-10" manufactured by Nippon Electric Glass Co., Ltd. was used for the substrate. The film thickness of the polyimide film was set to 15 μm. (Comparative Example) The substrate heating apparatus of the comparative example used an existing oven. The oven uses a heating rate of 0. 08 ° C / sec (4. 9 ° C / min), the cooling rate is 0. 05 ° C / sec (2. 8 ° C / min). In the comparative example, the second heating unit provided separately from the first heating unit is not provided. Fig. 12 is a view for explaining processing conditions of a comparative example. Fig. 12 is a graph showing the temperature distribution at the time of heat treatment by an oven. In Fig. 12, the horizontal axis represents time [min], and the vertical axis represents temperature [°C]. In the comparative example, nitrogen gas was first supplied to the oven, and the inside of the oven was set to a low oxygen gas atmosphere (oxygen concentration: 100 ppm). Next, the oven temperature is gradually increased to 180 ° C (step bake) while maintaining a low oxygen atmosphere, and the substrate is heated until the polyimine forming liquid applied to the substrate is volatilized or醯imination. Then, the oven temperature was raised to 450 ° C while maintaining a low oxygen atmosphere, and the oven temperature was gradually lowered after maintaining the specific time. Thereby, the molecular chains in the imidization of the polyimine-imiding liquid applied to the substrate are rearranged to form a polyimide film. In the comparative example, the treatment time before the formation of the polyimide film was 600 min. (Example) The substrate heating apparatus of the embodiment uses a first heating unit and a second heating unit (the substrate heating device 1 shown in Fig. 1) provided separately from the first heating unit. The first heating unit uses a heating plate, and the second heating unit uses an infrared heater. The heating plate uses a heating rate of 0. 2 ° C / sec, the cooling rate is 0. 05 ° C / sec. The infrared heater used a heating rate of 4 ° C / sec and a cooling rate of 2 ° C / sec. In the examples, first, the chamber was decompressed to a vacuum of 20 Pa (depressurization step). The treatment time of the decompression step was set to 2 min. Next, the substrate temperature was raised to 200 ° C while maintaining the atmosphere of the reduced pressure gas, and the substrate was heated until the polyimine forming liquid applied to the substrate was volatilized or yttrium-imided (first heating step). The treatment time of the first heating step was set to 10 min. Then, while maintaining the temperature of the reduced-pressure gas, the substrate temperature was gradually increased to 450 ° C, and then the substrate temperature was gradually lowered. Thereby, the molecular chains in the imidization of the polyimine-imiding liquid applied to the substrate are rearranged to form a polyimide film (second heating step). The processing time of the second heating step is set to 12. 5 min. Further, the heating plate temperature was maintained at 250 ° C from the depressurization step to the second heating step. Further, the infrared heater is heated and cooled only in the second heating step. Specifically, first, immediately after the second heating step, the infrared heater is heated up to 1 hour until the substrate temperature becomes 350 ° C, and then maintained in this state for 5 min, and then within 1 min. The temperature was raised until the substrate temperature became 450 ° C, and the temperature was lowered at this point. In the embodiment, the treatment time before forming the polyimide film is 24. 5 min. (Evaluation Results of Membrane Characteristics) The evaluation results of the film properties such as the mechanical properties of the polyamide film formed by the above Comparative Examples and Examples are shown in Table 1. Further, the breaking strength, the elongation at break, and the Young's modulus were measured using "RTC-1210A" manufactured by ORIRNTEC. [Table 1] Samples A to C were used as evaluation targets. The types of the polyimine-forming liquids of the samples A to C are different from each other. As shown in Table 1, in each of the comparative examples and the examples, different results were obtained between the samples A to C. In the case of Sample A, the examples gave good results in terms of elongation at break relative to the comparative examples. In the case of the sample B, the examples obtained good results in terms of breaking strength and elongation at break with respect to the comparative examples. In the case of the sample C, the examples obtained good results in terms of breaking strength, elongation at break, and Young's modulus with respect to the comparative examples. As described above, it is known that the polyimide film can be formed in a short time by forming a polyimide film using a substrate heating device including the first heating portion and the second heating portion separately provided from the first heating portion.

1‧‧‧基板加熱裝置
2‧‧‧腔室
3‧‧‧減壓部
4‧‧‧氣體供給部
5‧‧‧第一加熱部
6‧‧‧第二加熱部
7‧‧‧位置調整部
7a‧‧‧移動部
7b‧‧‧驅動部
8‧‧‧搬送部
8a‧‧‧搬送輥
8h‧‧‧通過部
9‧‧‧檢測部
10‧‧‧基板
10a‧‧‧第一面
10b‧‧‧第二面
11‧‧‧回收部
12‧‧‧擺動部
13‧‧‧真空泵
15‧‧‧控制部
21‧‧‧頂板
22‧‧‧底板
23‧‧‧周壁
23a‧‧‧基板搬入搬出口
201‧‧‧基板加熱裝置
205‧‧‧第一加熱部
205h‧‧‧插通孔
207‧‧‧位置調整部
270‧‧‧收容部
271‧‧‧第一支持板
271h‧‧‧插通孔
272‧‧‧第二支持板
273‧‧‧圍板
275‧‧‧移動部
276‧‧‧銷
277‧‧‧伸縮管
278‧‧‧基台
279‧‧‧驅動部
Cp‧‧‧腔室內壓力之曲線
Ct‧‧‧基板溫度之曲線
HP‧‧‧加熱板
IR‧‧‧紅外線加熱器
L1‧‧‧輥背離間隔
L2‧‧‧基板長度
L3‧‧‧第一加熱部長度
T1‧‧‧減壓區間
T2‧‧‧第一加熱區間
T3‧‧‧第二加熱區間
X‧‧‧方向
Y‧‧‧方向
Z‧‧‧方向1‧‧‧Substrate heating device
2‧‧‧ chamber
3‧‧‧Decompression Department
4‧‧‧Gas Supply Department
5‧‧‧First heating department
6‧‧‧second heating unit
7‧‧‧ Position Adjustment Department
7a‧‧‧Mobile Department
7b‧‧‧Driving Department
8‧‧‧Transportation Department
8a‧‧‧Transport roller
8h‧‧‧passing department
9‧‧‧Detection Department
10‧‧‧Substrate
10a‧‧‧ first side
10b‧‧‧ second side
11‧‧Recycling Department
12‧‧‧ swinging department
13‧‧‧Vacuum pump
15‧‧‧Control Department
21‧‧‧ top board
22‧‧‧floor
23‧‧‧Weibi
23a‧‧‧Substrate loading and unloading
201‧‧‧Substrate heating device
205‧‧‧First heating department
205h‧‧‧ inserted through hole
207‧‧‧ Position Adjustment Department
270‧‧‧ Housing Department
271‧‧‧ first support board
271h‧‧‧ inserted through hole
272‧‧‧second support board
273‧‧‧
275‧‧‧Mobile Department
276‧‧ ‧ sales
277‧‧‧ telescopic tube
278‧‧‧Abutment
279‧‧‧ Drive Department
Cp‧‧‧ chamber pressure curve
Ct‧‧‧ substrate temperature curve
HP‧‧‧ heating plate
IR‧‧‧Infrared heater
L1‧‧‧ Roll back separation
L2‧‧‧ substrate length
L3‧‧‧First heating section length
T1‧‧‧decompression zone
T2‧‧‧First heating zone
T3‧‧‧second heating zone
X‧‧‧ direction
Y‧‧‧ direction
Z‧‧‧ direction

圖1係第一實施形態之基板加熱裝置之立體圖。 圖2係用以對搬送輥、基板及第一加熱部之配置關係進行說明之圖。 圖3係比較加熱板與紅外線加熱器之升溫速率所得之曲線圖。 圖4係比較加熱板與紅外線加熱器之降溫速率所得之曲線圖。 圖5係用以對第一實施形態之基板加熱裝置之動作之一例進行說明之圖。 圖6係繼圖5後之第一實施形態之基板加熱裝置之動作說明圖。 圖7係繼圖6後之第一實施形態之基板加熱裝置之動作說明圖。 圖8係用以對第一實施形態之基板加熱方法之處理條件之一例進行說明之圖。 圖9係用以對第二實施形態之基板加熱裝置之動作之一例進行說明之圖。 圖10係繼圖9後之第二實施形態之基板加熱裝置之動作說明圖。 圖11係繼圖10後之第二實施形態之基板加熱裝置之動作說明圖。 圖12係用以對比較例之處理條件進行說明之圖。Fig. 1 is a perspective view of a substrate heating apparatus of the first embodiment. FIG. 2 is a view for explaining an arrangement relationship between a conveyance roller, a substrate, and a first heating unit. Figure 3 is a graph comparing the heating rates of the hot plate and the infrared heater. Figure 4 is a graph comparing the cooling rate of the heating plate and the infrared heater. Fig. 5 is a view for explaining an example of the operation of the substrate heating apparatus of the first embodiment. Fig. 6 is an explanatory view showing the operation of the substrate heating apparatus of the first embodiment, which is continued from Fig. 5; Fig. 7 is an explanatory view showing the operation of the substrate heating apparatus of the first embodiment after Fig. 6; Fig. 8 is a view for explaining an example of processing conditions of the substrate heating method of the first embodiment. Fig. 9 is a view for explaining an example of the operation of the substrate heating apparatus of the second embodiment. Fig. 10 is an explanatory view showing the operation of the substrate heating apparatus of the second embodiment, which is continued from Fig. 9; Fig. 11 is an explanatory view showing the operation of the substrate heating apparatus of the second embodiment, which is continued from Fig. 10; Fig. 12 is a view for explaining processing conditions of a comparative example.

1‧‧‧基板加熱裝置 1‧‧‧Substrate heating device

2‧‧‧腔室 2‧‧‧ chamber

3‧‧‧減壓部 3‧‧‧Decompression Department

4‧‧‧氣體供給部 4‧‧‧Gas Supply Department

5‧‧‧第一加熱部 5‧‧‧First heating department

6‧‧‧第二加熱部 6‧‧‧second heating unit

7‧‧‧位置調整部 7‧‧‧ Position Adjustment Department

7a‧‧‧移動部 7a‧‧‧Mobile Department

7b‧‧‧驅動部 7b‧‧‧Driving Department

8‧‧‧搬送部 8‧‧‧Transportation Department

8a‧‧‧搬送輥 8a‧‧‧Transport roller

8h‧‧‧通過部 8h‧‧‧passing department

9‧‧‧檢測部 9‧‧‧Detection Department

10‧‧‧基板 10‧‧‧Substrate

10a‧‧‧第一面 10a‧‧‧ first side

10b‧‧‧第二面 10b‧‧‧ second side

11‧‧‧回收部 11‧‧Recycling Department

12‧‧‧擺動部 12‧‧‧ swinging department

13‧‧‧真空泵 13‧‧‧Vacuum pump

15‧‧‧控制部 15‧‧‧Control Department

21‧‧‧頂板 21‧‧‧ top board

22‧‧‧底板 22‧‧‧floor

23‧‧‧周壁 23‧‧‧Weibi

23a‧‧‧基板搬入搬出口 23a‧‧‧Substrate loading and unloading

X‧‧‧方向 X‧‧‧ direction

Y‧‧‧方向 Y‧‧‧ direction

Z‧‧‧方向 Z‧‧‧ direction

Claims (27)

一種基板加熱裝置，其包含： 減壓部，其能夠將塗佈有用以形成聚醯亞胺之溶液之基板減壓； 第一加熱部，其能夠以第一溫度加熱上述基板；及 第二加熱部，其能夠以較上述第一溫度更高之第二溫度加熱上述基板；且 上述第二加熱部與上述第一加熱部個別獨立地設置。A substrate heating apparatus comprising: a pressure reducing portion capable of decompressing a substrate coated with a solution for forming a polyimide; a first heating portion capable of heating the substrate at a first temperature; and a second heating a portion capable of heating the substrate at a second temperature higher than the first temperature; and the second heating portion and the first heating portion are separately provided separately. 如請求項1之基板加熱裝置，其中 上述第二加熱部之升溫速率較上述第一加熱部之升溫速率更大。The substrate heating device of claim 1, wherein the heating rate of the second heating portion is greater than the heating rate of the first heating portion. 如請求項1或2之基板加熱裝置，其中 上述第二加熱部之降溫速率較上述第一加熱部之降溫速率更大。The substrate heating device of claim 1 or 2, wherein the temperature decreasing rate of the second heating portion is greater than the temperature decreasing rate of the first heating portion. 如請求項1或2之基板加熱裝置，其進而包含腔室， 該腔室能夠收容上述基板、上述第一加熱部及上述第二加熱部。The substrate heating device of claim 1 or 2, further comprising a chamber capable of accommodating the substrate, the first heating portion, and the second heating portion. 如請求項4之基板加熱裝置，其中 上述基板、上述第一加熱部及上述第二加熱部收容於共通之上述腔室。The substrate heating apparatus according to claim 4, wherein the substrate, the first heating unit, and the second heating unit are housed in the common chamber. 如請求項1或2之基板加熱裝置，其中 上述溶液僅塗佈於上述基板之第一面， 上述第一加熱部配置於上述基板之與第一面為相反側之第二面之側。The substrate heating apparatus according to claim 1 or 2, wherein the solution is applied only to the first surface of the substrate, and the first heating portion is disposed on a side of the second surface of the substrate opposite to the first surface. 如請求項6之基板加熱裝置，其中 上述第二加熱部配置於上述基板之第一面之側。The substrate heating device of claim 6, wherein the second heating portion is disposed on a side of the first surface of the substrate. 如請求項1或2之基板加熱裝置，其中 上述第一加熱部及上述第二加熱部之至少一者能夠階段性地加熱上述基板。The substrate heating apparatus according to claim 1 or 2, wherein at least one of the first heating unit and the second heating unit is capable of heating the substrate in stages. 如請求項1或2之基板加熱裝置，其進而包含位置調整部， 該位置調整部能夠調整上述第一加熱部及上述第二加熱部之至少一者與上述基板之相對位置。The substrate heating device according to claim 1 or 2, further comprising: a position adjusting unit configured to adjust a relative position of at least one of the first heating unit and the second heating unit to the substrate. 如請求項9之基板加熱裝置，其中 上述位置調整部包含移動部，該移動部能夠將上述基板於上述第一加熱部與上述第二加熱部之間移動。The substrate heating device according to claim 9, wherein the position adjusting portion includes a moving portion that is capable of moving the substrate between the first heating portion and the second heating portion. 如請求項10之基板加熱裝置，其中 於上述第一加熱部與上述第二加熱部之間，設置有能夠搬送上述基板之搬送部， 於上述搬送部，形成有能夠供上述移動部通過之通過部。The substrate heating apparatus according to claim 10, wherein a transfer unit capable of transporting the substrate is provided between the first heating unit and the second heating unit, and the transport unit is configured to allow passage of the moving unit unit. 如請求項10之基板加熱裝置，其中 上述移動部包含複數個銷，該等複數個銷能夠支持上述基板之與第一面為相反側之第二面且能夠沿上述第二面之法線方向移動，且 上述複數個銷之前端配置於與上述第二面平行之面內。The substrate heating device of claim 10, wherein the moving portion includes a plurality of pins capable of supporting a second surface of the substrate opposite to the first surface and capable of being along a normal direction of the second surface Moving, and the front ends of the plurality of pins are disposed in a plane parallel to the second surface. 如請求項12之基板加熱裝置，其中 於上述第一加熱部，形成有將上述第一加熱部沿上述第二面之法線方向開口之複數個插通孔， 上述複數個銷之前端設為能夠經由上述複數個插通孔而抵接於上述第二面。The substrate heating device according to claim 12, wherein the first heating portion is formed with a plurality of insertion holes that open the first heating portion along a normal direction of the second surface, and the plurality of pins are provided at a front end The second surface can be abutted via the plurality of insertion holes. 如請求項1或2之基板加熱裝置，其中 包含上述第一溫度之溫度範圍為20℃以上且300℃以下之範圍。The substrate heating apparatus according to claim 1 or 2, wherein the temperature range including the first temperature is in a range of 20 ° C or more and 300 ° C or less. 如請求項1或2之基板加熱裝置，其中 包含上述第二溫度之溫度範圍為200℃以上且600℃以下之範圍。The substrate heating apparatus according to claim 1 or 2, wherein the temperature range including the second temperature is in a range of 200 ° C or more and 600 ° C or less. 如請求項1或2之基板加熱裝置，其中 上述第一加熱部係加熱板。The substrate heating device of claim 1 or 2, wherein the first heating portion is a heating plate. 如請求項1或2之基板加熱裝置，其中 上述第二加熱部係紅外線加熱器。The substrate heating device of claim 1 or 2, wherein the second heating portion is an infrared heater. 如請求項17之基板加熱裝置，其中 上述紅外線加熱器之峰值波長範圍為1.5 μm以上且4 μm以下之範圍。The substrate heating device of claim 17, wherein the infrared heater has a peak wavelength range of 1.5 μm or more and 4 μm or less. 如請求項1或2之基板加熱裝置，其進而包含檢測部， 該檢測部能夠檢測上述基板之溫度。The substrate heating device of claim 1 or 2, further comprising a detecting portion capable of detecting a temperature of the substrate. 如請求項1或2之基板加熱裝置，其進而包含回收部， 該回收部能夠回收自塗佈於上述基板之上述溶液揮發之溶劑。The substrate heating apparatus according to claim 1 or 2, further comprising a recovery unit capable of recovering a solvent volatilized from the solution applied to the substrate. 如請求項1或2之基板加熱裝置，其進而包含擺動部， 該擺動部能夠擺動上述基板。The substrate heating device of claim 1 or 2, further comprising a swinging portion capable of swinging the substrate. 一種基板加熱方法，其包括： 減壓步驟，其係將塗佈有用以形成聚醯亞胺之溶液之基板減壓； 第一加熱步驟，其係以第一溫度加熱上述基板；及 第二加熱步驟，其係以較上述第一溫度更高之第二溫度加熱上述基板；且 於上述第二加熱步驟中，使用與上述第一加熱步驟中使用之第一加熱部個別獨立地設置之第二加熱部加熱上述基板。A substrate heating method comprising: a pressure reduction step of depressurizing a substrate coated with a solution for forming a polyimide; a first heating step of heating the substrate at a first temperature; and a second heating a step of heating the substrate at a second temperature higher than the first temperature; and in the second heating step, using the second heating unit independently of the first heating portion used in the first heating step The heating unit heats the substrate. 如請求項22之基板加熱方法，其中 於上述第二加熱步驟中，使上述第二加熱部之升溫速率較上述第一加熱部之升溫速率更大。The substrate heating method according to claim 22, wherein in the second heating step, a temperature increase rate of the second heating portion is made larger than a temperature increase rate of the first heating portion. 如請求項22或23之基板加熱方法，其中 於上述第二加熱步驟中，使上述第二加熱部之降溫速率較上述第一加熱部之降溫速率更大。The substrate heating method according to claim 22 or 23, wherein in the second heating step, the temperature lowering rate of the second heating portion is made larger than the temperature decreasing rate of the first heating portion. 如請求項22或23之基板加熱方法，其中 於上述減壓步驟中，將上述基板自大氣壓減壓至500 Pa以下， 於上述第一加熱步驟中，於保持上述減壓步驟之氣體氛圍之狀態下，於上述基板之溫度為150℃至300℃之範圍內，加熱上述基板直至塗佈於上述基板之上述溶液揮發或醯亞胺化為止， 於上述第二加熱步驟中，於保持上述減壓步驟之氣體氛圍之狀態下，加熱上述基板直至上述基板之溫度自上述第一加熱步驟之溫度變為600℃以下為止。The substrate heating method according to claim 22 or 23, wherein in the depressurizing step, the substrate is decompressed from atmospheric pressure to 500 Pa or less, and in the first heating step, the gas atmosphere in the depressurizing step is maintained. And heating the substrate until the solution coated on the substrate is volatilized or yttrium-imided in the temperature range of 150° C. to 300° C., in the second heating step, maintaining the decompression In the state of the gas atmosphere of the step, the substrate is heated until the temperature of the substrate becomes 600 ° C or lower from the temperature of the first heating step. 如請求項25之基板加熱方法，其中 於上述第一加熱步驟中，將加熱上述基板之時間設為10 min以下。The substrate heating method according to claim 25, wherein in the first heating step, the time for heating the substrate is set to 10 min or less. 如請求項25之基板加熱方法，其中 於上述第二加熱步驟中， 將上述第二加熱部之升溫速率設為100℃/min以上而將上述基板升溫。The substrate heating method according to claim 25, wherein in the second heating step, the temperature rise rate of the second heating portion is set to 100 ° C / min or more to raise the temperature of the substrate.
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