TW201720909A - Wavelength-converting material and application thereof - Google Patents

Abstract

A wavelength-converting material and application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0 ≤ a ≤ 1, 0 ≤ b ≤ 1.

Description

Wavelength conversion materials and their applications

This invention relates to a wavelength converting material and its use, and more particularly to a wavelength converting material comprising all inorganic perovskite quantum dots and uses thereof.

Fluorescent powders and quantum dots are the most common luminescent materials at this stage. However, the current phosphor powder market has become saturated, and the half-height width of the spectroscopic spectrum of the phosphor powder is generally too wide, and it has been difficult to break through so far, which has led to limitations in the technology applied to the device. Therefore, the development of the vector sub-points has become the current research trend.

Nanomaterials have particles ranging from 1 to 100 nm and are classified according to size. Semiconductor nanocrystals (NCs) are also called quantum dots (QDs), and their particle size is classified into 0-dimensional nanomaterials. Nano materials are widely used in applications such as light-emitting diodes, solar cells, and biomarkers. Their unique optical, electrical, and magnetic properties make them an emerging industry.

Quantum dots have the characteristics of narrow half-height and wide, so the light-emitting characteristics applied to the light-emitting diode device can effectively solve the problem that the traditional fluorescent pink domain is not broad enough, which is particularly concerned.

The disclosure relates to a wavelength converting material and its use.

According to one aspect of the present disclosure, a light emitting device is provided that includes a light emitting diode chip and a wavelength converting material. The wavelength converting material is excited by the first light emitted by the light emitting diode chip to emit a second light different from the wavelength of the first light. Wavelength converting materials include all inorganic perovskite quantum dots. The all-inorganic perovskite quantum dots have a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , of which 0 a 1,0 b 1.

In accordance with another aspect of the present disclosure, a wavelength converting material is proposed that includes two or more different inorganic perovskite quantum dots. The all-inorganic perovskite quantum dots have a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , of which 0 a 1,0 b 1.

In order to better understand the above and other aspects of the present disclosure, the preferred embodiments are described below in detail with reference to the accompanying drawings.

102, 202, 302, 3102, 3202‧‧‧Light Emitter Wafer

302s‧‧‧Glossy

3102S1, 3102S2‧‧‧ surface

104, 204‧‧‧Base

106‧‧‧ epitaxial structure

108‧‧‧First type semiconductor layer

110‧‧‧ active layer

112‧‧‧Second type semiconductor layer

114, 214, 2048, 3214, 3214R, 3214G, 3214B, 3214W‧‧‧ first electrode

116, 216, 2050, 3216‧‧‧ second electrode

318, 418, 518, 618, 718, 818, 918, 1018, 1118, 1218, 1318, 1418, 1518, 1618, 1718, 2018, 2218, 2318‧ ‧ light emitting diode package structure

320, 2761‧‧‧ base

321‧‧‧ Gujing District

322‧‧‧ cup wall

323, 1523‧‧‧ accommodating space

324, 324A, 324B, 724, 3124, 3124R, 3124G, 3124B, 3124W‧‧‧ wavelength conversion layer

326‧‧‧Reflection wall

326s‧‧‧ top

428, 628‧‧‧ structural components

428a, 628a‧‧‧ accommodating area

530, 1830, 1830A, 1830B, 1830C, 1830D‧‧‧ optical layers

1737, 2837‧‧‧Transparent colloid

1134‧‧‧Interval space

1536‧‧‧Electrical parts

1822‧‧‧Light source

1838‧‧‧Side-light backlight module

1938‧‧‧Direct type backlight module

2538, 2638, 3038‧‧‧ illuminating devices

1820‧‧‧Frame

1840‧‧‧reflector

1842‧‧‧Light guide plate

1842a‧‧‧Glossy

1842b‧‧‧Glossy

1844‧‧‧reflector

1946‧‧‧Optical layer

2051‧‧‧Upright part

2053‧‧‧cross leg

2352‧‧‧ Conductive plate

2354‧‧‧ Conductive strip

1855, 2155, 2555‧‧‧ boards

2456, 2756, 2856, 2956‧‧‧ plug-in lighting unit

2157‧‧‧ pads

2658‧‧‧Light shell

2660‧‧‧heatsink

2762‧‧‧First substrate

2764‧‧‧second substrate

2766‧‧‧First electrode prong

2768‧‧‧Second electrode pins

2770‧‧‧First contact pad

2772‧‧‧Second contact pad

2774‧‧‧Insulation

3076‧‧‧shell

3078‧‧‧Transparent lampshade

3080‧‧‧Circuit board

3082‧‧‧ drive circuit

3184‧‧‧Lighting device

S‧‧‧ spacer

FIG. 1 illustrates a light emitting diode wafer according to an embodiment.

FIG. 2 illustrates a light emitting diode wafer according to an embodiment.

FIG. 3 illustrates a light emitting diode package structure according to an embodiment.

FIG. 4 illustrates a light emitting diode package structure according to an embodiment.

FIG. 5 illustrates a light emitting diode package structure according to an embodiment.

FIG. 6 illustrates a light emitting diode package structure according to an embodiment.

FIG. 7 illustrates a light emitting diode package structure according to an embodiment.

FIG. 8 illustrates a light emitting diode package structure according to an embodiment.

FIG. 9 illustrates a light emitting diode package structure according to an embodiment.

FIG. 10 illustrates a light emitting diode package structure according to an embodiment.

FIG. 11 illustrates a light emitting diode package structure according to an embodiment.

FIG. 12 illustrates a light emitting diode package structure according to an embodiment.

FIG. 13 illustrates a light emitting diode package structure according to an embodiment.

FIG. 14 illustrates a light emitting diode package structure according to an embodiment.

FIG. 15 illustrates a light emitting diode package structure according to an embodiment.

FIG. 16 illustrates a light emitting diode package structure according to an embodiment.

FIG. 17 illustrates a light emitting diode package structure according to an embodiment.

Figure 18 illustrates a display module in accordance with an embodiment.

FIG. 19 illustrates a display module according to an embodiment.

FIG. 20 is a perspective view of a light emitting diode package structure according to an embodiment.

21 is a perspective view of a light emitting diode package structure in accordance with an embodiment.

FIG. 22 is a perspective view of a light emitting diode package structure according to an embodiment.

23 to 26 illustrate a method of fabricating a light emitting device according to an embodiment.

Figure 27 illustrates a plug-in lighting unit in accordance with an embodiment.

Figure 28 illustrates a plug-in lighting unit in accordance with an embodiment.

FIG. 29 illustrates a plug-in type light emitting unit according to an embodiment.

Figure 30 illustrates a light emitting device in accordance with an embodiment.

FIG. 31 is a diagram showing a portion of a illuminating device corresponding to a pixel portion according to an embodiment. Body map.

Figure 32 is a cross-sectional view showing a portion of a pixel corresponding to a pixel device according to an embodiment.

Figure 33 is an X-ray diffraction pattern of an all-inorganic perovskite quantum dot according to an embodiment.

Figure 34 is a photoexcited fluorescence spectrum of an all inorganic perovskite quantum dot according to an embodiment.

Figure 35 shows the CIE map position of an all inorganic perovskite quantum dot according to an embodiment.

Figure 36 is an X-ray diffraction pattern of an all inorganic perovskite quantum dot according to an embodiment.

Figure 37 is a photoexcited fluorescence spectrum of an all inorganic perovskite quantum dot according to an embodiment.

Figure 38 shows the CIE map position of an all inorganic perovskite quantum dot according to an embodiment.

Figure 39 is a photoexcited fluorescence spectrum of an all inorganic perovskite quantum dot according to an embodiment.

Figure 40 is a photo-excited fluorescence spectrum of a light-emitting diode package of a blue light-emitting diode wafer with red all-inorganic perovskite quantum dots and yellow phosphor powder according to an embodiment.

Figure 41 shows the CIE map position distribution of the illuminating color points of the light emitting diode package structure according to the embodiment.

Figure 42 is a photo-excited fluorescence spectrum showing the excitation of the all-inorganic perovskite quantum dots CsPbBr ₃ and CsPbI ₃ by a light-emitting diode wafer according to an embodiment.

Figure 43 shows the CIE map position distribution of the luminescent diode wafers excited by the all inorganic perovskite quantum dots CsPbBr ₃ and CsPbI ₃ .

Embodiments of the disclosure present a wavelength conversion material and its use. The wavelength converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , which can change the emission wavelength by composition and/or size, and has a large elasticity. In addition, the all-inorganic perovskite quantum dots can exhibit a half-height and wide-range luminescence spectrum and excellent solid color, so that when used in an illumination device such as an illumination source or a display device, the luminescence effect can be enhanced, such as color rendering, color rendering, Color gamut and so on.

It should be noted that the disclosure does not show all possible embodiments, and other embodiments not disclosed in the disclosure may also be applied. Furthermore, the dimensional ratios on the drawings are not drawn in proportion to the actual product. Therefore, the description and illustration are for illustrative purposes only and are not intended to be limiting. In addition, the description in the embodiments, such as the detailed structure, the process steps, the material application, and the like, are for illustrative purposes only and are not intended to limit the scope of the disclosure. The details of the steps and the details of the embodiments may be varied and modified in accordance with the needs of the actual application process without departing from the spirit and scope of the disclosure. The same/similar symbols are used to describe the same/similar elements.

In an embodiment, the light emitting device comprises a light emitting diode chip and a wavelength converting material. The wavelength converting material is excited by the first light emitted by the light emitting diode chip to emit a second light different from the wavelength of the first light.

In an embodiment, the wavelength converting material comprises an all-inorganic perovskite quantum dot having the chemical formula CsPb(Cl _a Br _1-ab I _b ) ₃ , wherein a 1,0 b 1. The all-inorganic perovskite quantum dots of the examples have excellent quantum efficiency, can exhibit a half-height width and wide spectral emission spectrum and excellent solid color, and thus can be used in a light-emitting device to enhance the luminous effect.

The all-inorganic perovskite quantum dots can be changed by the composition and/or size adjustment, and the luminescence color (second ray wavelength) can be changed by the band width (Band Gap), for example, from blue, green to red gamut. Flexible use.

The all inorganic perovskite quantum dots have a nanometer size. For example, the total inorganic perovskite quantum dots have a particle size ranging from 1 nm to 100 nm, such as from 1 nm to 20 nm.

For example, a fully inorganic perovskite quantum dot has the chemical formula CsPb(Cl _a Br _1-a ) ₃ , where 0 a 1; or an all-inorganic perovskite quantum dot having the chemical formula CsPb(Br _1-b I _b ) ₃ , wherein 0 b 1.

In embodiments, the all inorganic perovskite quantum dots can be blue quantum dots. For example, in the example of the chemical formula CsPb(Cl _a Br _1-a ) ₃ , when 0<a At 1 o'clock, the all-inorganic perovskite quantum dots are blue quantum dots. And/or, the all inorganic perovskite quantum dots having a particle size ranging from 7 nm to 10 nm are blue quantum dots. In one embodiment, the (second) light excited from the blue quantum dots has a peak position of 400 nm to 500 nm and a full width at half maximum of 10 nm to 30 nm.

In embodiments, the fully inorganic perovskite quantum dots can be red quantum dots. For example, in the example of the chemical formula CsPb(Br _1-b I _b ) ₃ , when 0.5 b At 1 o'clock, the all inorganic perovskite quantum dots are red quantum dots. And/or red quantum dots of all inorganic perovskite quantum dots having a particle size ranging from 10 nm to 14 nm. In one embodiment, the (second) light excited from the red quantum dots has a peak position of 570 nm to 700 nm and a full width at half maximum of 20 nm to 60 nm.

In embodiments, the all inorganic perovskite quantum dots can be green quantum dots. For example, in the example having the chemical formula CsPb(Br _1-b I _b ) ₃ , when 0 When b < 0.5, the all inorganic perovskite quantum dots are green quantum dots. And/or green quantum dots of all inorganic perovskite quantum dots having a particle size ranging from 8 nm to 12 nm. In one embodiment, the (second) light excited by the green all-inorganic perovskite quantum dots has a peak position ranging from 500 to 570 nm and a full width at half maximum ranging from 15 nm to 40 nm.

In the embodiment, the wavelength conversion material (or wavelength conversion layer) in the light-emitting device is not limited to use a single type of all-inorganic perovskite quantum dots, in other words, two or more types (ie, two, three, four, Or more) all inorganic perovskite quantum dots of different nature. The nature of the all inorganic perovskite quantum dots can vary depending on the chemical formula and/or size of the material.

For example, the all-inorganic perovskite quantum dots include a first all-inorganic perovskite quantum dot of a different nature mixed with a second all-inorganic perovskite quantum dot. In other embodiments, the all-inorganic perovskite quantum dots further comprise a third, fourth, or more total inorganic having properties different from the first all-inorganic perovskite quantum dots and the second all-inorganic perovskite quantum dots. Perovskite quantum dot mixing.

For example, the first fully inorganic perovskite quantum dot and the second fully inorganic perovskite quantum dot can have different particle sizes. In other embodiments, the all-inorganic perovskite quantum dots further comprise a particle size different from the first all-inorganic perovskite quantum dot and the second all-nothing The third, fourth, or more all-inorganic perovskite quantum dots of the perovskite quantum dots.

In some embodiments, the first all-inorganic perovskite quantum dot and the second all-inorganic perovskite quantum dot each have a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ ,0 a 1,0 b 1. Wherein, the first all-inorganic perovskite quantum dot has a different a from the second all-inorganic perovskite quantum dot. And/or, the first all-inorganic perovskite quantum dot has a different b than the second all-inorganic perovskite quantum dot. This concept can also be extended to examples having third, fourth, or more all-inorganic perovskite quantum dots.

For example, the first all-inorganic perovskite quantum dot and the second all-inorganic perovskite quantum dot may be selected from the group consisting of the chemical formula CsPb(Br _1-b I _b ) ₃ and 0.5 b a red quantum dot of 1 having a chemical formula of CsPb(Br _1-b I _b ) ₃ and 0 Green quantum dots with b<0.5 and having the chemical formula CsPb(Cl _a Br _1-a ) ₃ and 0<a A group of 1 blue quantum dots. Alternatively, the first all-inorganic perovskite quantum dot and the second all-inorganic perovskite quantum dot may be selected from red all-inorganic perovskite quantum dots having a particle size ranging from 10 nm to 14 nm, and having a particle size ranging from 8 nm to 12 nm. A group consisting of all inorganic perovskite quantum dots and blue all-inorganic perovskite quantum dots having a particle size ranging from 7 nm to 10 nm.

The all-inorganic perovskite quantum dots can be applied to various light-emitting devices such as lighting fixtures or light-emitting modules (front light modules, backlight modules) for display screens of mobile phones, television screens, etc., panel pixels or secondary paintings of displays It has advantages. Furthermore, when more inorganic inorganic perovskite quantum dots are used, that is, when more inorganic ilmenite quantum dots are used, the wider the emission spectrum of the illuminating device can reach the full spectrum ( Full spectrum) demand. Therefore, the use of this disclosure is not The perovskite quantum dots can improve the color gamut of the display device, and can also effectively improve the color purity and color authenticity of the display device, and can also greatly enhance the NTSC.

For example, in some embodiments, the illuminating device comprises at least two wholly inorganic perovskite quantum dots having the chemical formula CsPb(Br _1-b I _b ) ₃ and different properties, which can make the NTSC of the illuminating device reach 90% the above. In some embodiments, the illuminating device comprises at least four wholly inorganic perovskite quantum dots having chemical formula CsPb(Br _1-b I _b ) ₃ and different properties, which enables the illuminating device to exhibit an average color rendering of at least 75 Index (Ra).

For example, the light emitting device can be applied to a light emitting diode package structure. Taking a white light emitting diode package structure as an example, the wavelength conversion material contains green all-inorganic perovskite quantum dots and red all-inorganic perovskite quantum dots excited by blue light-emitting diodes, or the wavelength converting material contains red all-inorganic calcium-titanium. The mineral quantum dots and the yellow fluorescent powder are excited by the blue light emitting diode, or the wavelength converting material contains the green all inorganic perovskite quantum dots and the red fluorescent powder excited by the blue light emitting diode, or the wavelength converting material contains the red all inorganic Perovskite quantum dots, green all-inorganic perovskite quantum dots, and blue all-inorganic perovskite quantum dots are excited by ultraviolet light-emitting diodes.

The wavelength converting material (or wavelength converting layer) may further comprise other fluorescent materials, including inorganic fluorescent materials and/or organic fluorescent materials, for use with fully inorganic perovskite quantum dots. Here, the inorganic fluorescent material/organic fluorescent material may refer to other kinds of fluorescent quantum dots and/or non-quantum dot structures different from the all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-ab I _b ) ₃ described. Fluorescent material.

For example, inorganic fluorescent materials such as aluminate fluorescent powder (such as LuYAG, GaYAG, YAG, etc.), phthalic acid fluorescent powder, sulfide fluorescent powder, nitride fluorescent powder, fluoride fluorescent powder, etc. . The organic fluorescent material is selected from the group consisting of a monomolecular structure, a multimolecular structure, an oligomer (Oligomer), and a polymer, the compound having a perylene group, having a compound of a benzimidazole group, a compound having a Naphthalene group, a compound having an anthracene group, a compound having a phenanthrene group, a compound having a fluorene group, a compound having a 9-fluorenone group, a compound having a carbazole group, a compound having a glutarimide group, a compound having a 1,3-diphenylbenzene group, a compound having a benzopyrene group, a compound having a pyrene group, a compound having a pyridine group, a compound having a thiophene group, having 2, 3 a compound of the -dihydro-1H-benzo[de]isoquinoline-1,3-dione group, a compound having a benzimidazole group, and a combination thereof. For example, a yellow fluorescent material such as YAG:Ce, and/or an inorganic yellow fluorescent powder of an oxynitride, a cerium salt, a nitride component, and/or an organic yellow fluorescent powder. The red fluorescent powder includes, for example, a fluorinated phosphor A ₂ [MF ₆ ]: Mn ⁴⁺ , wherein A is a group selected from the group consisting of Li, Na, K, Rb, Cs, NH ₄ , and combinations thereof. M is a group selected from the group consisting of Ge, Si, Sn, Ti, Zr, and combinations thereof. Alternatively, the red phosphor may include (Sr, Ca)S: Eu, (Ca, Sr) ₂ Si ₅ N ₈ :Eu, CaAlSiN ₃ :Eu, (Sr,Ba) ₃ SiO ₅ :Eu.

FIG. 1 illustrates a light emitting diode wafer 102 in accordance with an embodiment. The light emitting diode wafer 102 includes a substrate 104, an epitaxial structure 106, a first electrode 114 and a second electrode 116. The epitaxial structure 106 includes a first stack from the substrate 104 in sequence The semiconductor layer 108, the active layer 110 and the second semiconductor layer 112. The first electrode 114 and the second electrode 116 are connected to the first type semiconductor layer 108 and the second type semiconductor layer 112, respectively. Substrate 104 may comprise an insulating material (eg, a sapphire material) or a semiconductor material. The first type semiconductor layer 108 and the second type semiconductor layer 112 have opposite conductivity types. For example, the first type semiconductor layer 108 has an N type semiconductor layer, and the second type semiconductor layer 112 has a P type semiconductor layer, wherein the first electrode 114 is an N electrode and the second electrode 116 is a P electrode. For example, the first type semiconductor layer 108 has a P type semiconductor layer, and the second type semiconductor layer 112 has an N type semiconductor layer, wherein the first electrode 114 is a P electrode and the second electrode 116 is an N electrode. The mounting type of the light-emitting diode wafer 102 may be any of a face-up mounter or a flip chip mounter. In the flip-chip mounting process, the LED array 102 is inverted such that the first electrode 114 and the second electrode 116 face the substrate, such as a circuit board, and the contact pads are electrically connected through the solder.

FIG. 2 illustrates a light emitting diode chip 202 according to another embodiment, which is a vertical light emitting diode chip. The light emitting diode chip 202 includes a substrate 204 and an epitaxial structure 106. The epitaxial structure 106 includes a first type semiconductor layer 108, an active layer 110, and a second type semiconductor layer 112 that are sequentially stacked from the substrate 204. The first electrode 214 and the second electrode 216 are respectively connected to the substrate 204 and the second type semiconductor layer 112. The material of the substrate 204 is selected from the group consisting of metals, alloys, conductors, semiconductors, and combinations thereof. The substrate 204 may include a semiconductor material of the same conductivity type as the first type semiconductor layer 108, or a conductive material such as metal or the like that may form an ohmic contact with the first type semiconductor layer 108. For example, the first type semiconductor layer 108 has an N type semiconductor The second type semiconductor layer 112 has a P-type semiconductor layer, wherein the first electrode 214 is an N electrode and the second electrode 216 is a P electrode. For example, the first type semiconductor layer 108 has a P type semiconductor layer, and the second type semiconductor layer 112 has an N type semiconductor layer, wherein the first electrode 214 is a P electrode and the second electrode 216 is an N electrode.

In an embodiment, the P-type semiconductor layer may be a P-type GaN material, and the N-type semiconductor layer may be an N-type GaN material. In an embodiment, the P-type semiconductor layer may be a P-type AlGaN material, and the N-type semiconductor layer may be an N-type AlGaN material. The active layer 110 is a multiple quantum well structure.

In one embodiment, the first light emitted by the LED chips 102, 202 has a wavelength of 220 nm to 480 nm. In one embodiment, the LED chips 102, 202 can be ultraviolet light emitting diode chips, and emit a first light having a wavelength of 200 nm to 400 nm. In one embodiment, the LED chips 102, 202 can be blue LED chips, and the first light is emitted at a wavelength of 430 nm to 480 nm.

In an embodiment, the wavelength converting material of the light emitting device can be included in the wavelength converting layer and/or doped in the light transmissive substrate. In some embodiments, the wavelength converting material can be coated on the light emitting face of the light emitting diode wafer. The following illuminating devices are exemplified by some devices using wavelength converting materials.

FIG. 3 illustrates a light emitting diode package structure 318 in accordance with an embodiment. The LED package structure 318 includes a light emitting diode chip 302, a susceptor 320, a wavelength conversion layer 324, and a reflective wall 326. The pedestal 320 has a solid crystal region 321 and a cup wall 322 surrounding the die bonding region 321 and defines an accommodating space 323. The LED chip 302 is disposed in the accommodating space 323 and can be fixed on the die bonding region 321 of the susceptor 320 through an adhesive. The wavelength conversion layer 324 is located on the light exiting side of the LED substrate 302. In more detail, the wavelength conversion layer 324 is located above the accommodating space 323 corresponding to the light emitting surface 302s of the LED array 302, and is located at the cup wall 322. On the top. The reflective wall 326 can be disposed on the outer sidewall of the wavelength conversion layer 324 and positioned on the top surface of the cup wall 322. The reflective wall 326 is formed of a material having light reflective properties and low light leakage, such as reflective glass, quartz, light reflective patches, polymeric plastics, or other suitable materials. The polymer plastic may be polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene (PS), polyethylene (PP), nylon. One of materials (polyamide, PA), polycarbonate (PC), epoxy, and silicone, or a combination of two or more materials. The light reflecting power of the reflective wall 326 can be varied by adding other filler particles. The filler particles can have composite materials of different particle sizes or different materials. The material of the filler particles may be, for example, titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), boron nitride (BN), zinc oxide (ZnO), or the like. This concept can be applied to other embodiments, and the description will not be repeated later. In this example, the gap between the LED chip 302 and the wavelength conversion layer 324 is separated by an air gap in the accommodating space 323 defined by the cup wall 322. In other words, the space 323 is accommodated. Other materials in contact with the LED substrate 302 are not filled.

In an embodiment, the wavelength conversion layer 324 includes one or more wavelength converting materials. Therefore, the luminescent properties of the LED package structure 318 can be adjusted through the wavelength conversion layer 324. In some embodiments, the wavelength conversion layer 324 also includes a light transmissive substrate into which the wavelength converting material is doped. The wavelength conversion layer 324 includes, for example, at least one of the above-described all-inorganic perovskite quantum dots CsPb (Cl _a Br _1-ab I _b ) ₃ doped in a light-transmitting substrate. In an embodiment, the light transmissive substrate comprises a transparent colloid, and the transparent colloid material may be polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene (polyvinyl methacrylate). Polystyrene, PS), Polypropylene (PP), Polyamide (PA), Polycarbonate (PC), Polyimide (PI), Polydimethylsiloxane (PDMS) ), epoxy or silicone, or a combination of two or more materials. In an embodiment, the light transmissive substrate comprises a glass material or a ceramic material, and the total inorganic perovskite quantum dots are mixed with a glass material or a ceramic material to form a glass quantum dot film or a ceramic quantum dot film.

In some embodiments, the wavelength conversion layer 324 and the LED array 302 (in this case, the accommodating space 323) are spaced apart from each other, which may prevent the wavelength conversion layer 324 from being thermally stable due to being too close to the LED substrate 302. The chemical and chemical stability can improve the lifetime of the wavelength conversion layer 324 and improve the reliability of the LED package structure product. This concept will not be repeated.

In other alternative embodiments, the air gap defined in the accommodating space 323 of the cup wall 322 may also be filled in a transparent encapsulant (not shown), and the transparent encapsulant may be polymethyl methacrylate. , PMMA), polyethylene terephthalate (PET), polystyrene (PS), polyethylene (PP), nylon (polyamide, PA), polycarbonate (PC), polyimide (PI), polydimethylsiloxane (PDMS), epoxy (epoxy) and silicone (silicone) Or a combination of two or more materials. In some embodiments, the transparent encapsulant can be doped with one or more wavelength converting materials. In other alternative embodiments, one or more wavelength converting materials may be coated on the light emitting face of the light emitting diode chip 302. Therefore, in addition to the wavelength conversion layer 324, the light emitting properties of the light emitting diode package structure are more transparent to the package (transparent) colloid containing the wavelength conversion material and/or the wavelength conversion material on the surface of the light emitting diode chip 302. The coating is adjusted. The type of wavelength conversion material of the wavelength conversion layer 324, the encapsulant and/or the coating may be appropriately adjusted depending on the actual needs of the product. This concept can be applied to other embodiments, and the description will not be repeated later.

FIG. 4 illustrates a light emitting diode package structure 418 according to an embodiment, which is different from the light emitting diode package structure 318 of FIG. The light emitting diode package structure 418 further includes a structural element 428 for supporting, encapsulating, or protecting the wavelength conversion layer 324. As shown, the structural component 428 has a receiving region 428a for receiving the wavelength converting layer 324 such that the upper and lower surfaces of the wavelength converting layer 324 are covered by the structural component 428. The structural component 428 is located on the top surface of the cup wall 322, thereby supporting the wavelength conversion layer 324 above the accommodating space 323 corresponding to the light emitting surface 302s of the LED array 302. The structural component 428 is preferably formed of a transparent material or a light transmissive material to avoid blocking light exiting the wavelength conversion layer 324. Structural element 428 can also have encapsulating material properties. For example, structural component 428 can comprise a material of quartz, glass, polymeric plastic. Alternatively, structural element 428 can be used to protect wavelength conversion layer 324 from foreign materials such as moisture or oxygen that can adversely affect its properties. In an embodiment, the structural element 428 may be a barrier film and/or a tantalum titanium oxide disposed on the surface of the wavelength conversion layer 324 to block foreign matter such as moisture or oxygen. The niobium titanium oxide may be a glass material such as SiTiO ₄ which has light transmittance and oxidation resistance and may be coated or film-coated on the surface of the wavelength conversion layer 324. The material of the barrier film may include an inorganic material such as a metal oxide (such as SiO ₂ , Al ₂ O _{3 ,} etc.) or a metal nitride (such as Si ₃ N _{3 ,} etc.), and may be a multilayer barrier film for coating or filming. The mode is disposed on the surface of the wavelength conversion layer 324. This concept can be applied to other embodiments, and the description will not be repeated later. The reflective wall 326 can be disposed around the outer sidewall of the structural member 428 and on the top surface of the cup wall 322.

FIG. 5 illustrates a light emitting diode package structure 518 according to an embodiment, which differs from the light emitting diode package structure 418 of FIG. 4 in that the light emitting diode package structure 518 further includes an optical layer 530 disposed on the reflective wall. 326 and structural element 428. The optical layer 530 can be used to adjust the light exit path of the light. For example, the optical layer 530 may be a transparent colloid containing diffusing particles, and the transparent colloid may be polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polystyrene. (polystyrene, PS), polyethylene (polypropylene, PP), nylon (polyamide, PA), polycarbonate (polycarbonate, PC), polyimide (PI), polydimethylsiloxane (polydimethylsiloxane, One of materials such as PDMS), epoxy, and silicone or a combination of two or more materials. The diffusion particles may include TiO ₂ , SiO ₂ , Al ₂ O ₃ , BN, ZnO, etc., and the diffusion particles may have the same or different particle diameters. This concept can also be applied to other embodiments, and the description will not be repeated. For example, the light emitting diode package structure 318 of FIG. 3, the light emitting diode package structure 618 of FIG. 6, the light emitting diode package structure 1018 of FIG. 10, and the like may be applied to the wavelength conversion layer 324. An optical layer 530 is disposed to adjust the light exiting path of the light.

FIG. 6 illustrates a light emitting diode package structure 618 according to an embodiment, which is different from the light emitting diode package structure 318 of FIG. The LED package structure 618 further includes a structural component 628 having a receiving region 628a for receiving and supporting the wavelength conversion layer 324 across the LED substrate 302 and disposed on the cup wall 322. The structural component 628 located on the lower surface of the wavelength conversion layer 324 is preferably formed of a transparent material or a light transmissive material to avoid blocking the light output of the wavelength conversion layer 324, such as quartz, glass, polymer, or other suitable material. This concept can be applied to other embodiments, and the description will not be repeated later.

FIG. 7 illustrates a light emitting diode package structure 718 according to an embodiment, which is different from the light emitting diode package structure 318 of FIG. The light emitting diode package structure 718 omits the wavelength conversion layer 324 and the reflective wall 326 shown in FIG. 3, and includes the wavelength conversion layer 724 filled in the accommodating space 323. The wavelength conversion layer 724 can include a transparent colloid and a wavelength converting material. A transparent colloid can be used as the encapsulant, and the wavelength converting material can be doped in the transparent colloid. The wavelength conversion layer 724 can cover the LED array 302 or can be further overlying the pedestal 320. The transparent colloid of the wavelength conversion layer 724 may be polymethyl methacrylate (PMMA) or ethylene terephthalate (polyethylene). Terephthalate, PET), polystyrene (PS), polyethylene (polypropylene, PP), nylon (polyamide, PA), polycarbonate (polycarbonate, PC), polyimide (PI), poly One of materials such as polydimethylsiloxane (PDMS), epoxy, and silicone may contain a combination of two or more materials.

FIG. 8 illustrates a light emitting diode package structure 818 according to an embodiment, which differs from the light emitting diode package structure 718 of FIG. 7 in that the light emitting diode package structure 818 further includes a structural element 628 that spans the wavelength. The conversion layer 724 is disposed on the cup wall 322 to protect the wavelength conversion material of the wavelength conversion layer 724 from damage by foreign matter such as moisture or oxygen. In an embodiment, the structural element 628 may be a barrier film and/or a niobium titanium oxide disposed on the surface of the wavelength conversion layer 724 to block foreign matter such as moisture or oxygen. The niobium titanium oxide may be a glass material such as SiTiO ₄ which has light transmittance and oxidation resistance and may be coated or film-coated on the surface of the wavelength conversion layer 724. The material of the barrier film may include an inorganic material such as a metal oxide (such as SiO ₂ , Al ₂ O _{3 ,} etc.) or a metal nitride (such as Si ₃ N _{3 ,} etc.), and may be a multilayer barrier film for coating or filming. The mode is disposed on the surface of the wavelength conversion layer 724.

FIG. 9 illustrates a light emitting diode package structure 918 including a pedestal 320 , a light emitting diode chip 302 , a wavelength conversion layer 324 , and a reflective wall 326 , according to an embodiment. The light emitting diode chip 302 is disposed on the die bonding region of the susceptor 320. The wavelength conversion layer 324 is disposed on the light-emitting surface of the light-emitting diode wafer 302. The reflective wall 326 is disposed on the sidewall of the wavelength conversion layer 324. The light emitting diode chip 302 can be transparent A wire passing through an opening (not shown) of the wavelength conversion layer 324 is electrically connected to the pedestal 320.

FIG. 10 illustrates a light emitting diode package structure 1018 according to an embodiment, and the difference between the light emitting diode package structure 918 and the light emitting diode package structure 918 of FIG. 9 is as follows. The LED package 1018 further includes an optical layer 530 disposed on the wavelength conversion layer 324 and the reflective wall 326. The LED chip 302 can be electrically connected to the pedestal 320 through a wire that passes through the opening of the wavelength conversion layer 324 and the optical layer 530 (not shown). The wire can be pulled out through the upper surface or side surface of the optical layer 530.

FIG. 11 illustrates a light emitting diode package structure 1118 including a light emitting diode chip 302, a wavelength conversion layer 324, and a reflective wall 326, in accordance with an embodiment. The reflective wall 326 surrounds the sidewall of the LED chip 302 and forms a spacer space 1134 having a higher height than the LED array 302. The wavelength conversion layer 324 is disposed on the top surface 326s of the reflective wall 326, and is separated from the LED substrate 302 by the spacing space 1134. This can avoid affecting the wavelength conversion layer 324 due to being too close to the LED substrate 302. The thermal stability and chemical stability can improve the lifetime of the wavelength conversion layer 324 and improve the reliability of the LED package structure. This concept will not be repeated.

FIG. 12 illustrates a light emitting diode package structure 1218 according to an embodiment, which differs from the light emitting diode package structure 1118 of FIG. 11 in that a wavelength conversion layer 324 is disposed on an inner sidewall of the reflective wall 326.

FIG. 13 illustrates a light emitting diode package structure 1318 according to an embodiment, which is different from the light emitting diode package structure 1118 of FIG. 11 as follows. The light emitting diode package structure 1318 further includes a structural element 428, wherein the wavelength conversion layer 324 is disposed in the receiving region 428a defined by the structural element 428. Structural element 428 can be used to support, encapsulate, or protect wavelength conversion layer 324. The structural elements 428 overlying the wavelength conversion layer 324 are disposed on the top surface 326s of the reflective wall 326, while the light emitting diode wafer 302 is spaced apart by a spacing space 1134. The structural component 428 is preferably formed of a transparent material or a light transmissive material to avoid blocking the light output of the wavelength conversion layer 324, and may also have packaging material properties. For example, the structural component 428 may include materials of quartz, glass, and polymer plastic. . Alternatively, structural element 428 can be used to protect wavelength conversion layer 324 from foreign materials such as moisture or oxygen that can adversely affect its properties. In an embodiment, the structural element 428 may be a barrier film and/or a tantalum titanium oxide disposed on the surface of the wavelength conversion layer 324 to block foreign matter such as moisture or oxygen. The niobium titanium oxide may be a glass material such as SiTiO ₄ which has light transmittance and oxidation resistance and may be coated or film-coated on the surface of the wavelength conversion layer 324. The material of the barrier film may include an inorganic material such as a metal oxide (such as SiO ₂ , Al ₂ O _{3 ,} etc.) or a metal nitride (such as Si ₃ N _{3 ,} etc.), and may be a multilayer barrier film for coating or filming. The mode is disposed on the surface of the wavelength conversion layer 324.

In one embodiment, the spacing space 1134 can be an empty space that is not filled with other materials. In another embodiment, the spacing space 1134 is preferably formed of a transparent material or a light transmissive material to avoid blocking light from the wavelength conversion layer 324, such as quartz, glass, polymer, or other suitable materials.

In an embodiment, the light emitting diode package structure 318, 418, 518, 618, 718, 818, 918, 1018, 1118, 1218 or 1318 emits white light. The light emitting diode chip 302 can be a blue light emitting diode wafer. The wavelength conversion layer 324 / wavelength conversion layer 724 comprises a red all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ and a yellow phosphor YAG: Ce, wherein 0.5 b 1; and/or, the red all inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the light emitting diode package structure 318, 418, 518, 618, 718, 818, 918, 1018, 1118, 1218 or 1318 emits white light. The light emitting diode chip 302 can be a blue light emitting diode wafer. The wavelength conversion layer 324 / wavelength conversion layer 724 comprises a green all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ and a red all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ , wherein green The b-parameter range of the all-inorganic perovskite quantum dots is 0. b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1; and/or, the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the light emitting diode package structure 318, 418, 518, 618, 718, 818, 918, 1018, 1118, 1218 or 1318 emits white light, and the light emitting diode chip 302 may be an ultraviolet light emitting diode chip. The wavelength conversion layer 324 / wavelength conversion layer 724 comprises a blue all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ , a green all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ , red The all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , wherein the a parameter range of the blue all-inorganic perovskite quantum dot is 0<a 1, the b parameter range of the green all-inorganic perovskite quantum dot is 0 b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1; and/or, the blue all-inorganic perovskite quantum dots have a particle size ranging from 7 nm to 10 nm, and the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots The particle size ranges from 10 nm to 14 nm.

FIG. 14 illustrates a light emitting diode package structure 1418 including a light emitting diode chip 302, a reflective wall 326, and a wavelength conversion layer 324, in accordance with an embodiment. The reflective wall 326 is disposed on a side surface of the light emitting diode wafer 302. The wavelength conversion layer 324 is disposed on the upper surface (light-emitting surface) of the light-emitting diode wafer 302. The wavelength conversion layer 324 may include a first wavelength conversion layer 324A and a second wavelength conversion layer 324B of different properties. In one embodiment, for example, the first wavelength conversion layer 324A contains a red all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , and the peak position of the light-emitting wavelength is between 570 nm and 700 nm, and the second wavelength The conversion layer 324B contains a green all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , and the peak position of the light-emitting wavelength is between 500 nm and 570 nm, wherein the b-parameter range of the green all-inorganic perovskite quantum dot is 0. b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1; and/or, the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots have a particle diameter ranging from 10 nm to 14 nm, but the disclosure is not limited thereto. The LED chip 302 can be electrically connected to the susceptor or the circuit board (not shown) by the first electrode 302a and the second electrode 302b.

FIG. 15 illustrates a light emitting diode package structure 1518 including a pedestal 320, a light emitting diode chip 302, a wavelength conversion layer 724, and a reflective wall 326, in accordance with an embodiment. The reflective wall 326 is disposed on the pedestal 320 and defines an accommodating space 1523. The LED chip 302 is disposed in the accommodating space 1523 and electrically connected to the conductive member 1536 on the susceptor 320 in a flip chip manner. The wavelength conversion layer 724 is filled in the accommodating space 1523 and is in contact with the luminescent diode chip 302.

FIG. 16 illustrates a light emitting diode package structure 1618 according to an embodiment, which differs from the light emitting diode package structure 1518 of FIG. 15 in that the light emitting diode package structure 1618 further includes a structural element 628 configured for wavelength conversion. The layer 724 and the reflective wall 326 are used to encapsulate and protect the wavelength conversion layer 724 to prevent the wavelength conversion layer 724 from being damaged by external substances such as moisture or oxygen. In an embodiment, the structural element 628 may be a barrier film and/or a niobium titanium oxide disposed on the surface of the wavelength conversion layer 724 to block foreign matter such as moisture or oxygen. The niobium titanium oxide may be a glass material such as SiTiO ₄ which has light transmittance and oxidation resistance and may be applied to the surface of the wavelength conversion layer 724 and the reflection wall 326 by coating or filming. The material of the barrier film may include an inorganic material such as a metal oxide (such as SiO ₂ , Al ₂ O _{3 ,} etc.) or a metal nitride (such as Si ₃ N _{3 ,} etc.), and may be a multilayer barrier film for coating or filming. The manner is disposed on the surface of the wavelength conversion layer 724 and the reflective wall 326.

In an embodiment, the LED package structures 1518, 1618 emit white light. The light emitting diode chip 302 can be a blue light emitting diode wafer. The wavelength conversion layer 724 comprises a red all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ and a yellow phosphor YAG:Ce, wherein 0.5 b 1; and/or, the red all inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the LED package structures 1518, 1618 emit white light. The light emitting diode chip 302 can be a blue light emitting diode wafer. The wavelength conversion layer 724 comprises a green all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ and a red all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , wherein the green all-inorganic perovskite The b parameter range of a quantum dot is 0. b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1; and/or, the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the LED package structures 1518, 1618 emit white light, and the LED chip 302 can be an ultraviolet light emitting diode chip. The wavelength conversion layer 724 comprises a blue all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ , a green all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ , and a red all-inorganic perovskite The quantum dot CsPb(Br _1-b I _b ) ₃ , wherein the a parameter range of the blue all-inorganic perovskite quantum dot is 0<a 1, the b parameter range of the green all-inorganic perovskite quantum dot is 0 b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1; and/or, the blue all-inorganic perovskite quantum dots have a particle size ranging from 7 nm to 10 nm, and the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots The particle size ranges from 10 nm to 14 nm.

FIG. 17 illustrates a light emitting diode package structure 1718 including a pedestal 320, a light emitting diode chip 302, a wavelength conversion layer 324, and a transparent colloid 1737, in accordance with an embodiment. The LED chip 302 is electrically connected to the susceptor 320 in a flip chip manner. The wavelength conversion layer 324 is disposed on the upper surface and the side surface of the light emitting diode wafer 302 and may extend onto the upper surface of the susceptor 320. In one embodiment, for example, the first wavelength conversion layer 324A contains a red all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , and the peak position of the light-emitting wavelength is between 570 nm and 700 nm, and the second wavelength The conversion layer 324B contains a green all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , and the peak position of the light-emitting wavelength is between 500 nm and 570 nm, wherein the b-parameter range of the green all-inorganic perovskite quantum dot is 0. b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1; and/or, the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots have a particle diameter ranging from 10 nm to 14 nm, but the disclosure is not limited thereto. The transparent colloid 1737 can be used as an encapsulant covering the wavelength conversion layer 324 and the pedestal 320.

FIG. 18 illustrates an application to the edge-lit backlight module 1838 according to an embodiment. The edge-lit backlight module 1838 includes a frame 1820, a light source 1822, and a light guide plate 1842. The light source 1822 includes a circuit board 1855 on the frame 1820 and a plurality of LED package structures 1318 as shown in FIG. 13 on the circuit board 1855. The light-emitting diode package structure 1318 has a light-emitting direction of the light guide plate 1842. One of the light entrances 1842a. The frame 1820 has a reflective sheet 1840. The light emitted from the LED package structure 1318 can be concentrated on the light guide plate 1842. The light is then emitted through the light-emitting surface 1842b of the light guide plate 1842 to the upper optical layer 1830 (or display panel). Optical layer 1830 can include, for example, optical layers 1830A, 1830B, 1830C, 1830D. For example, optical layers 1830A and 1830D can be diffusion sheets, and optical layers 1830B, 1830C can be brightness enhancing sheets. A reflective sheet 1844 can be disposed beneath the light guide plate 1842 to further direct light up to the optical layers 1830A, 1830B, 1830C, 1830D (or display panel, not shown). The edge-lit backlight module of the embodiment is not limited to the use of the light-emitting diode package structure 1318 as described in FIG. 13, and other light-emitting diode package structures disclosed herein may be used.

FIG. 19 illustrates a direct-lit backlight module 1938 that includes a secondary optics 1946 disposed on the LED package structure 1318, in accordance with an embodiment. The light exiting direction of the light emitting diode package structure 1318 is toward the optical layer 1830. The reflective sheet 1840 can facilitate the concentrated emission of light from the LED package structure 1318 to the optical layer 1830 (or display panel). The direct type backlight module of the embodiment is not limited to the use of the light emitting diode package structure 1318 as described in FIG. 13, and other light emitting diode package structures disclosed herein may be used.

20 and 21 are respectively a perspective view and a perspective view of a light emitting diode package structure 2018 according to an embodiment. The LED package structure 2018 includes a first electrode 2048 and a second electrode 2050 for electrically connecting to the outside, such as the pads 2157 of the circuit board 2155. As shown, the first electrode 2048 and the second electrode 2050 have an L shape, the upright portion 2051 is attached to the bottom of the base 320 and the base 320 is exposed, and the leg portion 2053 connecting the upright portion 2051 is embedded in the cup wall. The cup wall 322 is exposed in 322. The positive and negative electrodes of the LED chip 302 can be electrically connected to the first electrode 2048 and the upright portion 2051 of the second electrode 2050. The wavelength conversion layer 724 is filled in the accommodating space 323 defined by the susceptor 320 and the cup wall 322.

FIG. 22 is a perspective view of a light emitting diode package structure 2218 according to an embodiment, which is different from the light emitting diode package structure 2018 shown in FIG. 20 and FIG. 21 by an L-shaped first electrode 2048 and The second electrode 2050 has an upright portion 2051 extending beyond the base 320 and the cup wall 322, and the leg portion 2053 is connected to the upright portion 2051 and extends in a direction away from the cup wall 322 to electrically connect the circuit board 2155. Pad 2157.

In some embodiments, the LED package structure 2018 of FIGS. 20 and 21, and the LED package structure 2218 of FIG. 22 have a pedestal 320 The cup wall 322 is made of a transparent material. Therefore, the light emitted by the LED chip 302 can be directly emitted from the light emitting surface (not blocked by the opaque material or reflected by the reflective material) to emit the LED package structures 2018 and 2218. For example, light can be emitted upward and downward in a direction perpendicular to the pedestal 320, and light can be emitted at a wide angle (for example, greater than 180 degrees).

23 to 26 illustrate a method of fabricating a light emitting device according to an embodiment.

Referring to FIG. 23, the conductive plate 2352 is patterned to form a plurality of conductive strips 2354 separated from each other at the conductive plate 2352. The conductive plate 2352 can be patterned in a etched manner. Then, the light emitting diode package structure 2318 is disposed on the conductive plate 2352, wherein the first electrode and the second electrode (not shown) of the light emitting diode package structure 2318 correspond to the conductive strip 2354, so that the light emitting diode package structure 2318 The conductive plate 2352 is electrically connected. In one embodiment, a reflow process can be performed to bond the first electrode and the second electrode to different conductive strips 2354. Then, the conductive plate 2352 is subjected to a cutting step to obtain a plug-in type light-emitting unit 2456 as shown in Fig. 24. In one embodiment, the cutting can be performed in a punch manner.

Referring to FIG. 25, the plug-in type light-emitting unit 2456 is then inserted on the circuit board 2555 to obtain a light-emitting device 2538 having a light-emitting strip type. The plug-in type light emitting unit 2456 can be electrically connected to the circuit board 2555 by the conductive strips 2354 as the first electrodes and the second electrodes. In one embodiment, the circuit board 2555 has a drive circuit that can be used to provide the power required for the plug-in illumination unit 2456 to function.

Referring to FIG. 26, the light-emitting device 2538 having the light-emitting strip type is disposed on the heat sink 2660, and the lamp housing 2658 is disposed to cover the light-emitting device 2538. A light-emitting device 2638 having a lamp structure is obtained.

In an embodiment, the LED package structure 2318 can apply, for example, the LED package structures 318, 418, 518, 618, 718, 818, 918, 1018, 1118, 1218, as described in FIGS. 3 to 17 . 1318, 1418, 1518, 1618, 1718. In some embodiments, the LED package structure 2318 applies the LED package structures 318, 418, 518, 618, 718, 818 of FIGS. 3 to 8 in which the pedestal 320 and the cup wall 322 are transparent. The light is formed by the material, so that the light emitted by the LED chip 302 can be directly emitted from the light emitting surface (not blocked by the opaque material or reflected by the reflective material) to emit the LED package structure 318, 418, 518, 618, 718, 818, 2318, for example, light can be emitted upward and downward in a direction perpendicular to the pedestal 320, and a wide angle (for example, greater than 180 degrees) is emitted.

In some embodiments, the LED package 2318/plug-in lighting unit 2456 emits white light. The light emitting diode chip 302 can be a blue light emitting diode wafer, and the wavelength converting material comprises red all inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ and yellow fluorescent powder YAG:Ce, wherein 0.5 b 1. And/or, the red all inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the light emitting diode package structure 2318/plug-in light emitting unit 2456 emits white light. The light-emitting diode chip 302 can be a blue light-emitting diode wafer, and the wavelength conversion material comprises a green all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ and a red all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ , wherein the b parameter range of the green all-inorganic perovskite quantum dot is 0 b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1. And/or, the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the light emitting diode package structure 2318/plug-in light emitting unit 2456 emits white light. The light emitting diode chip 302 can be an ultraviolet light emitting diode chip, and the wavelength converting material comprises a blue all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ , and a green all-inorganic perovskite quantum dot CsPb ( Br _1-b I _b ) ₃ , red all inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ . The a parameter range of the blue all-inorganic perovskite quantum dot is 0<a 1. The b parameter range of the green all-inorganic perovskite quantum dot is 0. b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1. And/or, the blue all-inorganic perovskite quantum dots have a particle size ranging from 7 nm to 10 nm, and the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the particle size of the red all-inorganic perovskite quantum dots The range is from 10 nm to 14 nm.

FIG. 27 illustrates a plug-in lighting unit 2756 in accordance with an embodiment. The plug-in type light emitting unit 2756 includes a light emitting diode chip 302, a base 2761, a first electrode pin 2766, and a second electrode pin 2768. The susceptor 2761 includes a first substrate 2762, a second substrate 2764, and an insulating layer 2774. The insulating layer 2774 is disposed between the first substrate 2762 and the second substrate 2764 to electrically isolate the first substrate 2762 and the second substrate 2764. The LED chip 302 is disposed on a die attach region in the susceptor 2761 serving as a die plate, wherein the LED chip 302 is disposed across the insulating layer 2774 and is flip-chip disposed on the first substrate 2762 and On the second substrate 2764, the positive and negative electrodes of the LED substrate 302 are electrically connected to the first contact pad 2770 and the second contact pad 2772 on the first substrate 2762 and the second substrate 2764, thereby electrically connecting First electrode pins 2766 and second electrode pins 2768 extending from the first substrate 2762 and the second substrate 2764, respectively. The LED chip 302 can be electrically connected to the first contact pad 2770 and the second contact pad 2772 by solder (not shown).

FIG. 28 illustrates a plug-in lighting unit 2856 in accordance with another embodiment. The plug-in lighting unit 2856 includes a transparent colloid 2837 and a plug-in lighting unit 2756 as described in FIG. The transparent colloid 2837 covers the entire LED chip 302 and the pedestal 2761 and covers a portion of the first electrode pin 2766 and the second electrode pin 2768.

FIG. 29 illustrates a plug-in type light-emitting unit 2956 according to still another embodiment, which differs from the plug-in type light-emitting unit 2856 shown in FIG. 28 in that a transparent colloid 2837 covers the entire LED chip 302, and A portion of the surface of the pedestal 2761 on the same side as the illuminating diode chip 302 is covered, and the first electrode pin 2766 and the second electrode pin 2768 are not covered.

In an embodiment, the plug-in lighting unit 2856 or 2956 may include a wavelength converting material doped in the transparent colloid 2837, or a wavelength converting layer containing a wavelength converting material disposed on the surface of the LED wafer 302. In an embodiment, the transparent colloid 2837 can be any translucent polymer glue, such as PMMA, PET, PEN, PS, PP, PA, PC, PI, PDMS, Epoxy, silicone or other suitable materials, or Combination of the above. The transparent colloid 2837 can be doped with other substances according to actual needs to adjust the light properties. For example, diffusion particles can be doped to change the light path. The diffusion particles may include TiO ₂ , SiO ₂ , Al ₂ O ₃ , BN, ZnO, etc., and may have the same or different particle diameters.

FIG. 30 illustrates a light emitting device 3038 in accordance with an embodiment. The bulb type illumination device 3038 includes a plug-in type illumination unit 2956, a housing 3076, a transparent cover 3078, and a circuit board 3080 as shown in FIG. The plug-in type light-emitting unit 2956 is inserted into the circuit board 3080 and electrically connected to the circuit board 3080, thereby being electrically connected to the driving circuit 3082 of the circuit board 3080. The plug-in lighting unit 2956, along with the circuit board 3080, is disposed in an accommodation space defined by the associated housing 3076 and the transparent shade 3078.

The transparent colloid disclosed in the disclosure may be any translucent polymer glue, for example, PMMA, PET, PEN, PS, PP, PA, PC, PI, PDMS, Epoxy, silicone or other suitable materials, or Combination of the above.

The transparent colloid can be doped with other substances according to actual needs to adjust the light properties. For example, diffusion particles can be doped to change the light path. The diffusion particles may include TiO ₂ , SiO ₂ , Al ₂ O ₃ , BN, ZnO, etc., and may have the same or different particle diameters.

The illuminating device of the embodiment is not limited to the above examples, and may also include other types of illuminating diode package structures, illuminating modules applied to display devices such as backlight modules or front light modules, or lighting devices. The lamp, bulb, or other type of structure.

A single light-emitting diode package structure unit is not limited to the use of a single light-emitting diode wafer, and two or more light-emitting diode chips of the same or different light-emitting colors/wavelengths may be used.

In an embodiment, the LED package structures 2018, 2218 and the plug-in lighting units 2856, 2956 emit white light. The light emitting diode chip 302 can be a blue light emitting diode wafer, and the wavelength converting material comprises red all inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ and yellow fluorescent powder YAG:Ce, wherein 0.5 b 1. And/or, the red all inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the LED package structures 2018, 2218 and the plug-in lighting units 2856, 2956 emit white light. The light-emitting diode chip 302 can be a blue light-emitting diode wafer, and the wavelength conversion material comprises a green all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ and a red all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ , wherein the b parameter range of the green all-inorganic perovskite quantum dot is 0 b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1. And/or, the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the red all-inorganic perovskite quantum dots have a particle size ranging from 10 nm to 14 nm.

In an embodiment, the LED package structures 2018, 2218 and the plug-in lighting units 2856, 2956 emit white light. The light emitting diode chip 302 can be an ultraviolet light emitting diode chip, and the wavelength converting material comprises a blue all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ , and a green all-inorganic perovskite quantum dot CsPb ( Br _1-b I _b ) ₃ , red all inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ . The a parameter range of the blue all-inorganic perovskite quantum dot is 0<a 1. The b parameter range of the green all-inorganic perovskite quantum dot is 0. b<0.5, b parameter range of red all inorganic perovskite quantum dots 0.5 b 1. And/or, the blue all-inorganic perovskite quantum dots have a particle size ranging from 7 nm to 10 nm, and the green all-inorganic perovskite quantum dots have a particle size ranging from 8 nm to 12 nm, and the particle size of the red all-inorganic perovskite quantum dots The range is from 10 nm to 14 nm.

In an embodiment, a wavelength conversion material comprising all inorganic perovskite quantum dots The material can also be applied to a light-emitting device that is miniaturized in size, for example, a miniature light-emitting diode (Micro LED) is smaller in size than a general light-emitting diode.

For example, please refer to FIG. 31 and FIG. 32 simultaneously, which respectively show a perspective view and a cross-sectional view of a light emitting device according to an embodiment. In an embodiment, the light-emitting device 3184 can be a miniaturized light-emitting diode device, including a light-emitting diode chip 3102, a plurality of wavelength conversion layers 3124, and a plurality of spacer layers S. The light-emitting diode wafer 3102 includes surfaces 3102S1 and 3102S2 on opposite sides of each other, wherein the surface 3102S1 is a light-emitting surface of the light-emitting diode wafer 3102. These wavelength conversion layers 3124 are located on the light-emitting side of the light-emitting diode wafer 3102. More specifically, the wavelength conversion layers 3124 are spaced apart from the surface 3102S1 of the light-emitting diode wafer 3102. These spacer layers S are located on the surface 3102S1 of the light-emitting diode wafer 3102 and are disposed between the wavelength conversion layers 3124 at intervals.

In one embodiment, the LED chip 3102 is a vertical LED chip, including a first electrode 3214 and a second electrode 3216, which are respectively disposed on the surface 3102S1 and the surface 3102S2. The light-emitting side of the light-emitting diode wafer 3102 is located on the same side as the first electrode 3214.

In one embodiment, the wavelength conversion layer 3124 includes at least a wavelength conversion layer 3124R, 3124G, 3124B that can be excited by the LED chip 3102 to separate red, green, and blue light, respectively. The configuration can be applied to the display as a pixel configuration, wherein the different wavelength conversion layers 3124 can be divided into different sub-pixels, that is, the wavelength conversion layer 3124R corresponding to the red sub-pixel, and the wavelength conversion corresponding to the green sub-pixel. Layer 3124G and wavelength conversion layer 3124B corresponding to blue sub-pixels.

In an embodiment, the wavelength conversion layer 3124 further includes a wavelength conversion layer 3124W corresponding to the white sub-pixel, and is also disposed on the surface 3102S1 of the LED substrate 3102 through the spacer layer S and the wavelength conversion layers 3124R, 3124G, and 3124B. .

The pixels include at least a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the white sub-pixel can also be configured according to the design. The pixels or sub-pixels can be arranged in an array.

In the embodiment, the material of the spacer layer S may include an absorbing or reflecting light material, which can prevent the light corresponding to the sub-pixels of different colors from affecting each other to improve the display effect of the display. The light absorbing material may include, for example, black glue or the like. The light-reflecting substance may include, for example, white glue or the like.

In addition, the first electrode 3214 may include first electrodes 3214R, 3214G, 3214B, and 3214W corresponding to the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel, respectively. The second electrode 3216 may be a common electrode of a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel. In other embodiments, the first electrode 3214 may be configured to correspond to a sub-pixel of different colors. Separate electrodes. Through the separately controlled electrodes, the sub-pixels of different colors can be addressed and individually driven to illuminate.

In an embodiment, for example, the LED chip 3102 can be an ultraviolet light emitting diode chip, and the first light is emitted at a wavelength of 200 nm to 400 nm. Or the light emitting diode chip 3102 can be a blue light emitting diode chip, and emit a first light having a wavelength of 430 nm to 480 nm.

In an embodiment, the wavelength converting material corresponding to the wavelength conversion layer 3124R of the red sub-pixel may include a red all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ , 0.5 b 1, and / or particle size ranging from 10 nm to 14 nm. The wavelength converting material corresponding to the wavelength conversion layer 3124G of the green sub-pixel may include a green all-inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ ,0 b < 0.5, and / or particle size ranging from 8 nm to 12 nm. The wavelength converting material corresponding to the wavelength conversion layer 3124B of the blue sub-pixel may include a blue all-inorganic perovskite quantum dot CsPb(Cl _a Br _1-a ) ₃ , where 0<a 1 and/or particle size ranges from 7 nm to 10 nm, and/or blue phosphor powder. The wavelength converting material can be doped in the light transmissive substrate.

In addition, in the example in which the LED device 3102 is a blue light-emitting diode wafer, the wavelength conversion layer 3124B corresponding to the blue sub-pixel can be a transparent substrate, and the corresponding blue light is directly provided by the LED chip 3102. The blue light of the color sub-pixel. The wavelength conversion layer 3124W corresponding to the white sub-pixel may include a yellow phosphor, such as YAG:Ce, which may be excited by a portion of the first light (blue light, wavelength 430 nm to 480 nm) emitted by the LED chip 3102. Light, yellow light mixed with the remaining blue light to emit white light.

In the embodiment, the micro LEDs as shown in FIGS. 31 and 32 can be applied to a micro LED display. Compared with the general light-emitting diode technology, the miniature light-emitting diode has a small size and the pixel pitch is reduced from millimeter to micrometer, so that a high-density and small-sized light-emitting light can be formed on one integrated circuit wafer. The polar body array, and the color is easier to accurately debug, has a longer luminous life and higher brightness, and has better material stability, long life, no image imprinting and the like. The advantages of this technology can still utilize the characteristics of high efficiency, high brightness, high reliability and fast response time of the light-emitting diode, and it has no need for self-illumination. The characteristics of the backlight are more energy-saving, simple in mechanism, small in size, and thin. In addition, the miniature light-emitting diode technology achieves high resolution.

In order to make the disclosure more obvious and easy to understand, the following specific embodiments are described in detail below:

[Preparation of all inorganic perovskite quantum dots]

First, the synthesis of Cs precursor: 0.814g of Cs ₂ CO ₃ , 40mL of octadecene (ODE) and 2.5mL of oleic acid (OA) into a 100mL three-necked flask, under vacuum and temperature 120 After removing water for one hour in an environment of ° C, it was heated to 150 ° C under a nitrogen system until Cs ₂ CO _{3 was} completely reacted with oleic acid to obtain a Cs precursor (Cs-Oleate precursor).

Then, 5 mL of ODE and 0.188 mmol of PbX ₂ (X=Cl, Br, or I, which determines the halogen component of the total inorganic perovskite quantum dot) are added to a 25 mL three-necked flask under vacuum at a temperature of 120 ° C. After one hour of water removal, 0.5 mL of oleylamine and 0.5 mL of OA were injected into a three-necked flask under a nitrogen system. After the solution was clarified, the temperature was raised to 140-200 ° C (heating temperature can be adjusted to full inorganic The particle size of the perovskite quantum dot), then 0.4 mL of the Cs-Oleate precursor was quickly injected into the three-necked flask and waited for 5 seconds. After cooling the reaction system in an ice water bath, the whole inorganic perovskite quantum was purified by centrifugation. Point CsPb(Cl _a Br _1-ab I _b ) ₃ .

[Red/Green Fully Inorganic Perovskite Quantum Dots CsPb (Br _1-b I _b ) ₃ 】

Figure 33 is an X-ray diffraction pattern of the all inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ . From the bottom to the top of Figure 33, CsPbI ₃ , CsPb (Br _0.2 I _0.8 ) ₃ , CsPb (Br _0.3 I _0.7 ) ₃ , CsPb (Br _0.4 I _0.6 ) ₃ , CsPb (Br _0.5 I _0.5 ) ₃ , CsPb(Br _0.6 I _0.4 ) ₃ , XRD pattern at nucleation temperature of 180 ° C, the above-mentioned different ratios of Br and I perovskite quantum dot XRD patterns and the known cubic phase CsPbI ₃ , CsPbBr ₃ Compared with the standard map, it can be found that the XRD peak positions of all synthetic all-inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ are consistent with the cubic phase standard map, indicating the synthesis of all inorganic perovskite quantum dots. CsPb(Br _1-b I _b ) _{3 is} a cubic phase.

Figure 34 is a normalized photoexcited fluorescence (PL) spectrum of an all inorganic perovskite quantum dot CsPb (Br _1-b I _b ) ₃ using 460 nm excitation light. The peak position (strongest light release position) and the full width at half maximum (FWHM) of the data are shown in Table 1. Figure 35 shows the CIE map position of the fully inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ .

From Fig. 34, Fig. 35 and Table 1, it is found that the total inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ increases with the content of I element and the content of Br decreases, that is, the b value increases from 0.4 to 1. The luminescence peak produces a red shift phenomenon, that is, gradually shifts from 557 nm to 687 nm. This phenomenon can be explained by the quantum confinement effect. That is, since the I ion particle size is larger than the Br ion particle size, when the content of the I element in the all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ increases, the material size will become large and cause the emission spectrum. A red shift occurs.

In the all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , the all-inorganic perovskite quantum dots with b=0.5-1 are red quantum dots. Among them, the red strong inorganic perovskite quantum dot CsPb (Br _0.4 I _0.6 ) _{3 has} the strongest light-emitting position of 625 nm, which is in line with the red light-emitting band commonly used in the market. The half-height of the light wave is 35nm, which is narrower than the current common commercial red fluorescent powder, that is, it has better solid color. When applied to the light-emitting device, it can improve the light-emitting efficiency of the product, or when it is combined with other kinds of firefly. When the light substance is mixed to obtain a light-emitting device, the color rendering property of the product can be increased.

In the all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ , the all-inorganic perovskite quantum dot with b = 0.4 (CsPb(Br _0.6 I _0.4 ) ₃ ) is a green quantum dot with the strongest light emission. The position is 557nm, which is in line with the green emission band commonly used in the market. The half-height of the light wave is 27nm, which is narrower than the current common commercial green fluorescent powder, that is, it has better solid color, which can improve the light-emitting efficiency of the product when applied to the light-emitting device, or when it is combined with other kinds of firefly. When the light substance is mixed to obtain a light-emitting device, the color rendering property of the product can be increased.

[All inorganic perovskite quantum dots CsPb (Cl _a Br _1-a ) ₃ 】

Figure 36 is an X-ray diffraction pattern of the all inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ . a = 0, 0.5, 1. Compared with the known cubic phase CsPBr ₃ and CsPbCl ₃ standard spectra, it can be found that the XRD peak positions of all synthetic all-inorganic perovskite CsPb (Cl _a Br _1-a ) ₃ quantum dots are in the same phase as the cubic phase. The standard map is consistent, indicating that the synthetic all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ conforms to the cubic phase. The nucleation temperature of the all inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ was 180 °C.

Figure 37 is a normalized photoexcited fluorescence spectrum of the all-inorganic perovskite quantum dot CsPb (Cl _a Br _1-a ) ₃ (a = 0, 0.5, 1). The excitation light has a wavelength of 380 nm. The peak position (strongest light release position) and the full width at half maximum (FWHM) of the displayed data are shown in Table 2. Figure 38 shows the CIE map position of the all inorganic perovskite quantum dot CsPb(Cl _a Br _1-a ) ₃ .

From Fig. 37, Fig. 38 and Table 2, it is found that the total inorganic perovskite quantum dot CsPb(Cl _a Br _1-a ) ₃ increases with the content of Cl and the content of Br increases, that is, the value of a increases from 1 to 1. 0, the luminescence peak produces a red shift phenomenon, that is, gradually shifts from 406 nm to 514 nm. This phenomenon can be explained by the quantum confinement effect. That is, since the Cl ion particle size is smaller than the Br ion particle size, when the Cl element content in the all-inorganic perovskite quantum dot CsPb(Cl _a Br _1-a ) ₃ is decreased, the material size will become large and the emission spectrum is caused. A red shift occurs. In the all-inorganic perovskite quantum dot CsPb(Cl _a Br _1-a ) ₃ , a = 0 (CsPbBr ₃ , that is, the chemical formula CsPb (Br _1-b I _b ) ₃ b = 1) of all inorganic calcium titanium The ore quantum dots are green quantum dots, and the all-inorganic perovskite quantum dots of a=0.5, 1 (CsPb(Cl _0.5 Br _0.5 ) ₃ , CsPbCl ₃ ) are blue quantum dots.

Figure 39 is a normalized photoexcited fluorescence spectrum of the combined 34th and 37th images, showing the total inorganic perovskite quantum dot CsPb (Cl _a Br _1-ab I _b ) ₃ with Cl, Br, The luminescent properties of the I element content change. The light covers the red, green, and blue ranges, and each light wave has a half width and a narrow width. Therefore, various desired luminescence peak positions can be obtained by adjusting the composition of the all-inorganic perovskite quantum dots, and the materials can exhibit excellent photoelectric properties when applied to a light-emitting device.

[Light Emitting Diode Package Structure]

Figure 40 is a normalized light of a blue LED array with red all-inorganic perovskite quantum dot CsPb (Br _0.4 I _0.6 ) ₃ and a general commercial yellow phosphor YAG:Ce LED package structure. Excitation of the fluorescence spectrum. The red all-inorganic perovskite quantum dot CsPb (Br _0.4 I _0.6 ) _{3 has} a light-emitting wavelength of 625 nm. The yellow fluorescent powder YAG:Ce has a light-emitting wavelength of 560 nm. Figure 41 shows the CIE map position distribution of the illuminating color point of the LED package structure, which is close to the black body radiant line and has application value in commercial applications. Table 3 shows that the correlated color temperature (CCT) 4010K of the LED package structure is warm white, the luminous efficiency is 56 lumens per watt (lm/W), and the average color rendering index (Color Rendering Index Ra; CRI Ra) is 83.9, and the color rendering R9 is 40, which can effectively improve the color rendering of packaged products.

[Use a variety of all inorganic perovskite quantum dots]

Table 4 lists the conditions and luminescence results of Examples 1 to 5. Each example uses a light emitting diode wafer to excite combinations of different types of all inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ . As shown in Table 4, Example 1 uses two wholly inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ , which are b = 0.3 to 0.4 and b = 0.7 to 0.8, respectively, which exhibit a spectral average. The color rendering index (Ra) is 40. Example 2 uses three all-inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ , which are b = 0.1 to 0.2, 0.5 to 0.6, and 0.6 to 0.7, respectively, and exhibit a spectral average color rendering index of 60. . Example 3 uses four all-inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ , which are b=0~0.1, 0.2-0.3, 0.4-0.5 and 0.6-0.7, respectively, and exhibit a spectral average. The color rendering index is 75. Example 4 uses five all-inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ , which are b=0~0.1, 0.3-0.4, 0.5-0.6, 0.7-0.8 and 0.8-0.9, respectively. The spectral average color rendering index is 90. Example 5 uses six all-inorganic perovskite quantum dots CsPb(Br _1-b I _b ) ₃ , which are b=0~0.1, 0.2-0.3, 0.5-0.6, 0.6-0.7, 0.7-0.8 and 0.9~, respectively. 1, which exhibits a spectral average color rendering index of 95.

In other embodiments, as shown in FIG. 42 and FIG. 43, respectively, the photoexcited fluorescence spectrum and the CIE when the phosphorescent diode wafers are excited by the inorganic-inorganic perovskite quantum dots CsPbBr ₃ and CsPbI ₃ according to the embodiment are shown. The position distribution of the map, the excitation of at least two different compositions of the all-inorganic perovskite quantum dot CsPb(Br _1-b I _b ) ₃ with the luminescent diode wafer can achieve NTSC of more than 90%. For example, when a combination of two is used, where b is 0 and 1, respectively, the light-emitting diode wafer excites the all inorganic perovskite quantum dots CsPbBr ₃ and CsPbI ₃ , and the NTSC reaches 119%.

According to the above embodiment, there is a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , wherein 0 a 1,0 b The all-inorganic perovskite quantum dots of 1 can exhibit a half-height width and a wide luminescence spectrum and excellent solid color, so that the illuminating effect can be improved when applied to a light-emitting device.

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

302‧‧‧Light Emitter Wafer

302s‧‧‧Glossy

318‧‧‧Light emitting diode package structure

320‧‧‧Base

321‧‧‧ Gujing District

322‧‧‧ cup wall

323‧‧‧ accommodating space

324‧‧‧wavelength conversion layer

326‧‧‧Reflection wall

Claims (34)

A light emitting device comprising: a light emitting diode wafer; and a wavelength converting material excited by the first light emitted from the light emitting diode chip to emit a second light different from the wavelength of the first light, the wavelength The conversion material comprises an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , wherein a 1,0 b 1. The illuminating device of claim 1, wherein the all-inorganic perovskite quantum dot has a chemical formula of CsPb(Cl _a Br _1-a ) ₃ or CsPb(Br _1-b I _b ) ₃ . The illuminating device of claim 1, wherein the all-inorganic perovskite quantum dot has a chemical formula of CsPb(Br _1-b I _b ) ₃ , wherein 0.5 b 1. The all-inorganic perovskite quantum dot is a red quantum dot. The light-emitting device of claim 3, wherein the second light emitted from the red quantum dot has a peak position of 570 nm to 700 nm and a full width at half maximum of 20 nm to 60 nm. The illuminating device of claim 1, wherein the all-inorganic perovskite quantum dot has a chemical formula of CsPb(Br _1-b I _b ) ₃ , wherein b < 0.5, the all inorganic perovskite quantum dots are green quantum dots. The illuminating device of claim 5, wherein the second ray excited from the green quantum dot has a peak position of 500 to 570 nm and a full width at half maximum of 15 to 40 nm. The illuminating device of claim 1, wherein the all-inorganic perovskite quantum dot has a chemical formula of CsPb(Cl _a Br _1-a ) ₃ , wherein 0<a 1. The all-inorganic perovskite quantum dot is a blue quantum dot. The light-emitting device of claim 7, wherein the second light emitted from the blue quantum dot has a peak position of 400 nm to 500 nm and a full width at half maximum of 10 nm to 30 nm. The illuminating device of claim 1, wherein the all-inorganic perovskite quantum dots have a particle size ranging from 1 nm to 100 nm. The illuminating device of claim 9, wherein the all-inorganic perovskite quantum dot is a red quantum dot having a particle diameter ranging from 10 nm to 14 nm, or the total inorganic perovskite quantum dot is in a particle size ranging from 8 nm to 12 nm. The green quantum dots, or the all-inorganic perovskite quantum dots, are blue quantum dots having a particle size ranging from 7 nm to 10 nm. The illuminating device of claim 1, wherein the all-inorganic perovskite quantum dot comprises a first all-inorganic perovskite quantum dot and a second all-inorganic perovskite quantum dot, the first all-inorganic The perovskite quantum dot and the second all-inorganic perovskite quantum dot have a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , wherein a 1,0 b 1. The first all-inorganic perovskite quantum dot has different properties from the second all-inorganic perovskite quantum dot. The illuminating device of claim 11, wherein the first all-inorganic perovskite quantum dot and the second all-inorganic perovskite quantum dot have different a or different b, and/or have different Particle size. The illuminating device of claim 12, wherein the different first inorganic-inorganic perovskite quantum dots and the second all-inorganic perovskite quantum dots are selected from the group consisting of chemical formula CsPb (Br _1-b I _b ) ₃ and 0.5 b a red quantum dot of 1 having a chemical formula of CsPb(Br _1-b I _b ) ₃ and 0 Green quantum dots with b<0.5 and having the chemical formula CsPb(Cl _a Br _1-a ) ₃ and 0<a A group of 1 blue quantum dots. The illuminating device of claim 12, wherein the first all-inorganic perovskite quantum dot and the second all-inorganic perovskite quantum dot are selected from red total inorganic having a particle size ranging from 10 nm to 14 nm. A group consisting of perovskite quantum dots, green all-inorganic perovskite quantum dots having a particle size ranging from 8 nm to 12 nm, and blue all-inorganic perovskite quantum dots having a particle size ranging from 7 nm to 10 nm. The illuminating device of claim 11, wherein the first all-inorganic perovskite quantum dot and the second all-inorganic perovskite quantum dot have a chemical formula CsPb(Br _1-b I _b ) ₃ , b of the first all-inorganic perovskite quantum dot is 0, and b of the second all-inorganic perovskite quantum dot is 1. The light-emitting device of claim 1, comprising a wavelength conversion layer disposed on a light-emitting side of the light-emitting diode wafer, wherein the wavelength conversion layer comprises the wavelength conversion material. The light-emitting device of claim 16, comprising: a plurality of the wavelength conversion layers disposed at intervals on the light-emitting side of the light-emitting diode wafer; and a plurality of spacer layers disposed in the wavelength conversion layers The spacer layers include light absorbing materials or light reflecting materials. The light-emitting device of claim 17, which is a miniature light-emitting diode. The illuminating device of claim 17, wherein the illuminating diode chip has a first electrode and a second electrode on opposite sides, and the light emitting side of the illuminating diode chip is One electrode is on the same side. The illuminating device of claim 17, which is applied to the display and includes a plurality of pixels each including at least one red sub-pixel, one green sub-pixel and one blue sub-pixel, the red The sub-pixel, the green sub-pixel, and the blue sub-pixel each include one of the wavelength conversion layers, wherein the all-inorganic perovskite quantum dot corresponding to the wavelength conversion layer of the red sub-pixel has Chemical formula CsPb(Br _1-b I _b ) ₃ , of which 0.5 b 1, and / or the particle size range of 10 nm to 14 nm, and / or the total inorganic perovskite quantum dot corresponding to the wavelength conversion layer of the green sub-pixel has a chemical formula CsPb (Br _1-b I _b ) ₃ , where 0 b<0.5, and/or the particle size range of 8 nm to 12 nm, and/or the all-inorganic perovskite quantum dot corresponding to the wavelength conversion layer of the blue sub-pixel has a chemical formula CsPb (Cl _a Br _{1- a} ) ₃ , where 0<a 1, and / or particle size ranges from 7 nm to 10 nm. The illuminating device of claim 20, wherein the pixels further comprise a white sub-pixel, the other one of the wavelength conversion layers, and the red layer is separated by the spacer layer The pixel, the green sub-pixel, and the blue sub-pixel. The illuminating device of claim 16, wherein the wavelength is changed The change layer and the light emitting diode chip are in contact with each other or are separated from each other. The light-emitting device of claim 16, wherein the wavelength conversion layer further comprises a light-transmitting substrate, and the wavelength conversion material is doped in the light-transmitting substrate. The illuminating device of claim 16, comprising a plurality of stacked wavelength conversion layers each having a different luminescent band. The illuminating device of claim 16, further comprising a transparent colloid encapsulating the wavelength conversion layer and the illuminating diode chip. The illuminating device of claim 16, further comprising a structural component, wherein the structural component has an accommodating region for accommodating the wavelength conversion layer to be above the wavelength conversion layer The lower surface is covered by the structural component to support, encapsulate, and protect the wavelength conversion layer; the structural component is on a lower surface of the wavelength conversion layer, and has an accommodating area for accommodating and supporting the wavelength conversion layer And the structural element is on the upper surface of the wavelength conversion layer for protecting the wavelength conversion layer. The illuminating device of claim 1, further comprising a pedestal having a solid crystal region therein, wherein the illuminating diode wafer is on the die bonding region. The illuminating device of claim 1, further comprising a reflective wall outside the wavelength conversion layer. The illuminating device according to claim 1, which is applied to a backlight module, a pixel of a display or a sub-pixel, or a lighting device. The illuminating device according to claim 1, comprising at least two of the all-inorganic perovskite quantum dots having a chemical formula of CsPb(Br _1-b I _b ) ₃ and different b, such that the illuminating device NTSC More than 90%. The illuminating device according to claim 1, comprising at least four of the all-inorganic perovskite quantum dots having a chemical formula of CsPb(Br _1-b I _b ) ₃ and different b, wherein the illuminating device emits The light has an average color rendering index (Ra) of at least 75 or more. A wavelength conversion material comprising two or more different inorganic perovskite quantum dots having a chemical formula of CsPb(Cl _a Br _1-ab I _b ) ₃ , wherein a 1,0 b 1. The wavelength conversion material of claim 32, wherein the two or more different properties of the all inorganic perovskite quantum dots have different a or different b. The wavelength conversion material of claim 32, wherein the two or more different properties of the all inorganic perovskite quantum dots have different particle sizes.