201101532 九、發明說明： 【發明戶斤屬之技術領域：！ 發明領域 本發明係有關於一種發光源封裝體，更特別地，係有 5 關於一種亮度提升之發光源封裝體。201101532 IX. Description of the invention: [Technical field of inventions: FIELD OF THE INVENTION The present invention relates to an illumination source package, and more particularly to an illumination source package for brightness enhancement.
L· U 發明背景 近年來，以發光二極體般之發光源取代現有發光源作 為電子裝置、照明設備等等的發光源已越來越普及。因此， 10 是有進一步提升現有發光晶元的亮度。 有鑑於此，本案發明人遂以其從事該行業之多年經 驗，並本著精益求精之精神，積極研究改良，遂有本發明 『發光源封裝體』產生。 【發明内容】 15 發明概要 本發明之目的是為提供一種亮度提升之發光源封裝 體。 根據本發明之一特徵，一種發光源封裝體是被提供， 該封裝體包含：一個發光晶元，該發光晶元包括一個第一 20 半導體層，該第一半導體層是為一個第一導電類型半導體 層；一個第二半導體層，該第二半導體層是為一個第二導 電類型半導體層且是疊置在該第一半導體層上；及一個疊 置在該第二半導體上的工業藍寶石層，該工業藍寶石層之 與該第二半導體層相對的表面上是以適當的方式形成有數 201101532 Ο ίο 15 Ο 個微孔洞，於每個微孔_，f光粉Μ 亮度的材料層是被形成。 仃肊夠k升 圖式簡單說明 =關树明為達上述目的、特徵所採用的技術手段及 一力K釋較佳實補並配合圖式說明如下： 第一圖是為一個顯示本發明之第—丄 源封裝體的示意部份剖·; 彳^之發光 第二圖是為-個顯示不同發光晶片之亮度水平的圖 料第三圖是為—個顯示本發明之第—較佳實施例之發光 Λ、、裝體之應用的示意頂視平面圖； ^四®是為-_示本發明H佳實施例之發光 源封裝體的示意部份剖視圖； 第五圖是為—個顯示本發明之第三 源封裝體的示意部份剖視圖； Λ χ 第/、圖疋為一個顯示本於明之笸叫y u 源封褒體的示意部份剖視l Μ貫施例之發光 表； 第七圖是為 第八圖是為 個顯 示不 同波長之波形的圖示； 自顯林發明之第五較佳實施例之發光 源封骏體的示意部份剖視圖； ^ 第九圖是為一個顯示本發 源封奢髀夕雍用的X月之弟五車父佳實施例之發光 凌體之應用的不思部份剖視圖； 第十圖是為一個顯示本發 源封袭體的示意部份剖視圖；月之^較佳實施例之發光 20 201101532BACKGROUND OF THE INVENTION In recent years, it has become increasingly popular to replace existing light sources with light-emitting diode-like light sources as light sources for electronic devices, lighting devices, and the like. Therefore, 10 is to further enhance the brightness of existing luminescent wafers. In view of this, the inventor of the present invention has been actively researching and improving in the spirit of excellence in the industry for many years of experience in the industry, and has produced the "light source package" of the present invention. SUMMARY OF THE INVENTION 15 SUMMARY OF THE INVENTION An object of the present invention is to provide a light source package having improved brightness. According to a feature of the invention, a light source package is provided, the package comprising: a light emitting die, the light emitting die comprising a first 20 semiconductor layer, the first semiconductor layer being a first conductive type a semiconductor layer; a second semiconductor layer, which is a second conductive type semiconductor layer and overlaid on the first semiconductor layer; and an industrial sapphire layer stacked on the second semiconductor, A surface of the industrial sapphire layer opposite to the second semiconductor layer is formed in a suitable manner by a number of 201101532 Ο ί 15 15 微 micropores, and a layer of material of each microporous _, f Μ 亮度 brightness is formed. .仃肊 k 升 升 图 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = A schematic partial cross-section of a germanium source package; a second image of a light-emitting layer showing a brightness level of a different light-emitting chip is shown in the first embodiment of the present invention. A schematic top plan view of the application of the light-emitting device and the package; ^4 is a schematic partial cross-sectional view of the light source package of the preferred embodiment of the present invention; the fifth figure is a display of the present invention A schematic partial cross-sectional view of the third source package; Λ χ 、 、 、 、 、 、 、 、 、 、 yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu yu 8 is a schematic view showing a waveform of a different wavelength; a schematic partial cross-sectional view of the illuminating source of the fifth preferred embodiment of the invention; ^ ninth is a display of the source seal The glory of the embodiment of the X-Carriage Application of partial cross-sectional view of the body do not think; FIG tenth is a schematic cross-sectional view of a part of the present invention display source body passage blocked; ^ months preferred embodiment of the light emitting Example 20 201 101 532
、…第十目疋為個顯示本發明之第七較佳實施例之私 - 光源封裝體的示意部份剖視圖； X 第十圖疋為-個顯示本發明之第八較佳實施例之發 光源封裝體的示意部份剖視圖；及 " …第十圖疋為—個顯示本發明之第九較佳實施例之發 光源封裝體的示意部份剖視圖。 ' 【實施方式】 ❹較佳實施例之詳細說明 β、θ始本1明之佳實施例的摇述之前，應要注意的 1〇 = 4 了清楚揭示本發明的特徵，於圖式中之元件並非按 貫際比例描、纟會。 弟—圖是為顯示本發明之第一較佳實施例之發光源封 裝體的示意剖視圖。 請參閱第-圖所示，該發光源封裝體包括—個基座卜 15 一個安裝於該基座1上的第-發光晶元2、和-個安袭於該 Ο 冑—發光晶元2上的第二發光晶元3。 °亥基座1是由散熱良好的材料製成，而且在其之元件安 裝表面10上是設置有一個反射杯11和數個導電觸點12。該 反射杯11具有一個曝露該基座1之元件安裝表面10的貫孔 20 110。該貫孔110在接近該基座1之元件安裝表面10的孔直徑 疋比在遠離該基座1之元件安裝表面10的孔直徑小。 在本實施例中，該第—發光晶元2是為發光二極體晶元 而且是以習知適當的方式安裝於該基座1的元件安裝表面 10上位於該反射杯11的貫孔11 〇内以致於該第一發光晶元2 201101532 的V電觸點（圖巾未示）是與在該基座丨之元件安裝表面⑺上 之對應的導電觸點12電氣連接。 5 ❹ 10 15 ❹ 在本貫施例中，該第二發光晶元3是為雷射晶元而且是 疊置在該第一發光晶元2上以致於該第二發光晶元3的導電 觸點（圖中未示）是經由導線20來與在《座！之元件安裳表 面10上之對應的導電觸點12電氣連接。 b -個螢光粉層4是設置在該貫_⑽俾可覆蓋該等發 光晶几2,3。在本實施例中，該螢光粉層4是適於由該等發 光晶元2,3所發射出來的光線激發來產出具合意顏色的: 線。 應要/主思的疋’在該基座1之元件安裝表面10上的導電 觸點I2疋適於透過任何胃知適當的來與外部電路電氣 連接，由於該等方式是為眾所周知，於此怒不再贅述。 晴配合參閱第二圖所示，由於在本實施例中該第—發 光晶兀2是為發光二極體晶元而該第二發光晶元3是為雷射 晶元，該榮光粉層4是摻雜有分別適合該第一發光晶元靖 該第二發光晶兀3之不同波長的螢光粉以致於第二發光晶 兀3能夠在第一發光晶元2一次激發其中一種合適之螢光粉 時二次激發另-種合適之螢光粉俾可達成兩段㈣激發來 提升壳度。當然，該第一發光晶元2亦可以是雷射晶元俾可 激發更高能階發出更高亮度效果。 此外，波長258-980nm的雷射光線可以與波長 370-650nm的LED光線混光合成白光，且激發螢光粉效率與 轉換效率。 20 201101532 圖所示，數個本發明 載體6上俾可作為液 之發光源封裝體是安 晶顯示器之背光源或 請參閱第三 裝於一個長條狀 者室内照明之用 弟四圖是為一也)_ 卿體的示意部份::：發明之第二較佳實施例之發光 與第-較佳實施例10 is a schematic partial cross-sectional view showing a private-light source package of a seventh preferred embodiment of the present invention; Xth is a light-emitting diagram showing an eighth preferred embodiment of the present invention A schematic partial cross-sectional view of a source package; and a "partial view" showing a schematic partial cross-sectional view of a light source package of a ninth preferred embodiment of the present invention. [Embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Before the description of the preferred embodiments of β, θ, and 1 is clearly noted, 1〇=4 clearly reveals the features of the present invention, and the elements in the drawings It is not based on a consistent ratio. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic cross-sectional view showing a light source housing of a first preferred embodiment of the present invention. Referring to FIG. 3, the light source package includes a pedestal, a first illuminating crystal element 2 mounted on the susceptor 1, and an illuminating illuminating crystal element 2 The second illuminating crystal element 3. The hoist base 1 is made of a heat-dissipating material, and is provided with a reflecting cup 11 and a plurality of conductive contacts 12 on its component mounting surface 10. The reflector cup 11 has a through hole 20 110 that exposes the component mounting surface 10 of the base 1. The diameter of the hole of the through hole 110 near the component mounting surface 10 of the susceptor 1 is smaller than the diameter of the hole of the component mounting surface 10 away from the susceptor 1. In the present embodiment, the first illuminating crystal element 2 is a light emitting diode element and is mounted on the component mounting surface 10 of the susceptor 1 in the through hole 11 of the reflective cup 11 in a suitable manner. The V electrical contacts (not shown) of the first illuminating wafer 2 201101532 are electrically connected to corresponding conductive contacts 12 on the component mounting surface (7) of the pedestal. 5 ❹ 10 15 ❹ In the present embodiment, the second illuminating crystal 3 is a laser crystal and is superposed on the first illuminating crystal 2 so that the conductive illuminating of the second illuminating crystal 3 The point (not shown) is via the wire 20 and in the seat! The corresponding conductive contacts 12 on the component 10 are electrically connected. b - a phosphor layer 4 is disposed over the _(10) 俾 to cover the luminescent crystals 2, 3. In the present embodiment, the phosphor layer 4 is adapted to be excited by the light emitted by the luminescence elements 2, 3 to produce a desired color: a line. The conductive contact I2 on the component mounting surface 10 of the susceptor 1 is adapted to be electrically connected to an external circuit by any suitable function, as these are well known. The anger is no longer described. As shown in the second figure, since the first illuminating crystal 2 is a light emitting diode and the second illuminating crystal 3 is a laser crystal, the glory layer 4 is shown in FIG. The phosphor powder is doped with different wavelengths suitable for the first illuminating crystal unit to the second illuminating crystal 3, so that the second illuminating crystal 3 can be excited at the first illuminating crystal 2 at one time. When the light powder is secondarily excited, another suitable fluorescent powder can achieve two-stage (four) excitation to increase the shell degree. Of course, the first illuminating crystal element 2 can also be a laser crystal element, which can excite a higher energy level to emit a higher brightness effect. In addition, laser light with a wavelength of 258-980 nm can be mixed with LED light of wavelength 370-650 nm to synthesize white light, and stimulate the efficiency and conversion efficiency of the phosphor. 20 201101532 As shown in the figure, several of the carrier 6 of the present invention can be used as a liquid light source package, which is a backlight of an Anjing display or please refer to the third device installed in a strip of indoor lighting. </ RTI> _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
裝於該基座丨料件轉3是並列地安 體。第五圖顯示本發明之第三較佳實施例的發光源封裝 #在本列中’該第二發光晶元3是置於外部，而由該 第1光曰曰7〇3所發出的光線是經由從該第二發光晶元3延 伸到該反射杯11之貫孔110内的光纖3〇來傳輸到該勞光粉 層4俾可激發該螢光粉層4的螢光粉來產生具合意顏色的光 線。 15 應要注意的是，在光纖3〇内是可以填注像磷般的材料 〇 俾可造成向外折射’達成光纖發光結果。 第六圖顯示本發明之第四較佳實施例的發光源封裝 體。 與弟二較佳實施例不同，本實施例僅包括位於外部的 20第二發光晶元3。 弟七圖是為紅、綠和藍三色的波長圖。由圖可知，紅 色、綠色和藍色螢光粉受到u V光線(2 5 8 - 9 8 0n m)波長激發成 白光。 第八圖顯示本發明之第五較佳實施例的發光源封裝 201101532 • 體。 . 如在圖中所示，第五較佳實施例的發光源封裝體包括 一個第一基座1、一個第一發光晶元2、一個第二發光晶元 3、一個螢光粉層4、和一個第二基座5。 5 與第一較佳實施例相同，該第一基座1是由散熱良好的 材料製成，而且在其之元件安裝表面10上是設置有一個反 射杯11和數個導電觸點12。該反射杯11具有一個曝露該基 座1之元件安裝表面10的貫孔110。該貫孔110在接近該基座 1之元件安裝表面10的孔直徑是比在遠離該基座1之元件安 10 裝表面10的孔直徑小。 該第一發光晶元2是為發光二極體晶元而且是以習知 適當的方式安裝於該第一基座1的元件安裝表面10上位於 該反射杯11的貫孔110内以致於該第一發光晶元2的導電觸 點（圖中未示）是與在該基座1之元件安裝表面10上之對應的 15 導電觸點12電氣連接。 一個螢光粉層4是設置在該貫孔110内俾可覆蓋該第一 fj 發光晶元2。在本實施例中，該螢光粉層4是適於受該等發 光晶元2,3激發來產出預定顏色的光線。 該第二基座5是置於該反射杯11上方且是由透明的材 20 料製成。該第二基座5具有一個元件安裝表面50和一個安裝 於該元件安裝表面50上的反射凸體51。 該第二發光晶元3是為雷射晶元而且是設置在該第二 基座5的元件安裝表面50上以致於由它所發出的光線是經 由該反射凸體51反射到該螢光粉層4俾可與該螢光粉層4的 10 201101532 - 螢光粉激發來發出具合意顏色的光線。 - 第九圖是為一個顯示數個第五實施例之發光源封裝體 是如在第三圖中所示一樣安裝在一個長條形載體6上的示 意側視圖。 5 第十圖顯示本發明之第六較佳實施例之發光源封裝體 的示意部份剖視圖。 請參閱第十圖所示，該發光源封裝體包括一個載體6、 0 數個基座1、和一個發光晶元3。 s亥載體6具有—個元件安裝表面60和數個自其之底面 10延伸到該元件安裝表面60的安裝孔61。 該等基座1是安裝在該載體6的元件安裝表面6〇上且對 準對應的安裝孔61。每個基座1的結構是與第一實施例中之 基座的結構相同。 該發光晶元3是設置於外部而由該發光晶元3所發出的 15光線是透過數條自該發光晶元3經由該載體6之對應的安裝 〇 孔61延伸到對應之基座1之螢光粉層4的光纖30來傳輪到該 螢光粉層4俾可與該螢光粉層4的螢光粉激發來發出具合意 顏色的光線。 第十一圖顯示本發明之第七較佳實施例的發光源封裝 20 體。 該發光源封裝體包含一個發光晶元。該發光晶元包括 —個第一半導體層70、一個第二半導體層7丨、和一個工業 藍寶石層72。 在本實施例中，該第一半導體層70是為一個p型（第一 11 201101532 導電類型）半導體層，而該第二半導體層71是為一個^^型（第 二導電類型）半導體層且是疊置在該第一半導體層70上。 該工業藍寶石層72是疊置在該第二半導體層72上而且 其之與5亥弟二半導體層72相對的表面上是以·適當的方式形 5成數個微孔洞720。該等微孔洞720的大小是為若τμιη到若 干nm俾可達到微孔效應。於每個微孔洞72〇内，螢光粉層721 或者任何能夠提升亮度的材料層能夠被形成俾可達到增光 亮度。 應要注意的是，增亮螢光粉加上CrTi02或者Cr〇2或者 10其他增光之螢光粉或者光子量晶體等材料經uv led之波 長及雷射藍光之波長造成第二態以上螢光激發。 第一態激發是藉著LED UV或者藍光的作用來完成。 CrTi02對340-360nm激發波峰提高UV或者藍光對螢光粉的 增益激發。 15 第二態激發是藉著雷射320-450nm波長脈衝之波峰對 混合螢光粉或光子量晶體產生第二態螢光激發。 此外，於該工業藍寶石層72之表面上亦可佈設一層散 熱透明金屬’像ITO等等般，俾可增進該發光源封裝體之上 層及四個邊的熱傳導出去到其他金屬。 20 $ 一方面，於該工業藍寶石層72之表面上亦可佈設一 層約谓入厚的薄膜層俾可由於非線性光學折射而產生藍移 (Blue Shift)現象，使得波县 長520nm中有7〇nm波長藍移到 450nm波長。 此外，由發光W所發射的光線只要配合在微孔洞72〇 12 201101532 内之適^的螢光粉材料便能夠達成發出白光的結果。 第十二圖是為一個描繪本發明之第八較佳實施例之發 光源封裝體的示意部份剖視圖。 如在圖式中所示，與第七實施例不同，該發光源封裳 一更匕括個形成於该弟一半導體層7〇之與第二半導體居 71相對之表面上的反射層73。 應要注意的是，在該第一半導體層7〇之形成有反射層 73的表面上亦可形成有在第七實施例中所述的微孔洞俾可 提高65%反射增益。 10 第十三圖是為一個描繪本發明之第九較佳實施例之發 光源封裝體的示意部份剖視圖。 如在圖式中所示，與第七實施例不同，該發光源封裝 體更包括-個第二發光晶元。該第二發光晶元具有一個第 一半導體層80和—個第二半導體層81。 15 該第二發光晶元的第—半導體層80是為—個p型（第— 導電_)半導㈣且是經由適於與外部電路⑽巾未示）電 氣連接的導體82來疊置在該第一發光晶元之第-半導體層 7〇之與忒第一半導體層71相對的表面上，而該第二半導體 層81是為-個KT型（第二導電類型）半導體層且是疊置在节 20第-半導體層8〇之與該第一發光晶元之第—半導體㈣相〆 對的表面上。讀第二發光晶元的第二半導體層81是經由適 於與外部電路電氣連接的導體82來與該第—發光晶元的第 二半導體層71電氣連接。 應要’。的是’在本實施例中，該第―發光晶元和該 13 201101532 5 ❹ 10 第二發光晶元可以分別是為發光二極體晶元和雷射晶元， 或者，該第一發光晶元和該第二發光晶元可以是相同的類 型的晶元。 綜上所述，本發明之『發光源封裝體』，確能藉上述 所揭露之構造、裝置，達到預期之目的與功效，且申請前 未見於刊物亦未公開使用，符合發明專利之新穎、進步等 要件。 惟，上述所揭之圖式及說明，僅為本發明之實施例而 已，非為限定本發明之實施例；大凡熟悉該項技藝之人仕， 其所依本發明之特徵範疇，所作之其他等效變化或修飾， 皆應涵蓋在以下本案之申請專利範圍内。 【圖式簡單說明3 第一圖是為一個顯示本發明之第一較佳實施例之發光 源封裝體的示意部份剖視圖； 15 第二圖是為一個顯示不同發光晶片之亮度水平的圖 Ο 表； 第三圖是為一個顯示本發明之第一較佳實施例之發光 源封裝體之應用的示意頂視平面圖； 第四圖是為一個顯示本發明之第二較佳實施例之發光 20 源封裝體的示意部份剖視圖； 第五圖是為一個顯示本發明之第三較佳實施例之發光 源封裝體的示意部份剖視圖； 第六圖是為一個顯示本發明之第四較佳實施例之發光 源封裝體的示意部份剖視圖； 14 201101532 第七圖是為一個顯示不同波長之波形的圖示； 第八圖是為一個顯示本發明之第五較佳實施例之發光 源封裝體的示意部份剖視圖； 第九圖是為一個顯示本發明之第五較佳實施例之發光 5 源封裝體之應用的示意部份剖視圖； 第十圖是為一個顯示本發明之第六較佳實施例之發光 源封裝體的示意部份剖視圖； 第十一圖是為一個顯示本發明之第七較佳實施例之發 光源封裝體的示意部份剖視圖； 10 第十二圖是為一個顯示本發明之第八較佳實施例之發. 光源封裝體的示意部份剖視圖；及 第十三圖是為一個顯示本發明之第九較佳實施例之發 光源封裝體的示意部份剖視圖。 【主要元件符號說明】 1 基座 30 光纖 10 元件安裝表面 5 第二基座 11 反射杯 50 元件安裝表面 110 貫孔 51 反射凸體 12 導電觸點 60 元件安裝表面 2 第一發光晶元 61 安裝孔 20 導線 70 第一半導體層 3 第二發光晶元 71 第二半導體層 4 螢光粉層 72 工業藍寶石層 6 載體 720 微孔洞 15 201101532 73 反射層 82 導體 80 第一半導體層 81 第二半導體層The turret turns 3 mounted on the pedestal are juxtaposed. The fifth figure shows the illuminating source package # of the third preferred embodiment of the present invention. In the present column, the second illuminating crystal element 3 is placed outside, and the light emitted by the first diaphragm 7〇3 is emitted. The optical fiber 3 延伸 extending from the second illuminating crystal 3 to the through hole 110 of the reflective cup 11 is transmitted to the grading layer 4 俾 to excite the luminescent powder of the phosphor layer 4 to generate The light of the desired color. 15 It should be noted that a material like phosphorus can be filled in the fiber 3 〇 俾 can cause outward refracting to achieve fiber illuminating results. Fig. 6 is a view showing a light source package of a fourth preferred embodiment of the present invention. Unlike the preferred embodiment of the second embodiment, the present embodiment includes only the second illuminating crystal element 3 located outside. The seven figures are wavelength maps for the three colors of red, green and blue. As can be seen from the figure, the red, green and blue phosphors are excited by the U V light (2 5 8 - 9 8 0 nm) wavelength into white light. Figure 8 shows a light source package according to a fifth preferred embodiment of the present invention 201101532. As shown in the figure, the light source package of the fifth preferred embodiment includes a first pedestal 1, a first illuminating crystal element 2, a second illuminating crystal unit 3, and a phosphor layer 4. And a second base 5. 5 As in the first preferred embodiment, the first susceptor 1 is made of a heat-dissipating material, and is provided with a reflector cup 11 and a plurality of conductive contacts 12 on its component mounting surface 10. The reflector cup 11 has a through hole 110 that exposes the component mounting surface 10 of the base 1. The diameter of the hole of the through hole 110 near the component mounting surface 10 of the susceptor 1 is smaller than the diameter of the hole of the component mounting surface 10 remote from the susceptor 1. The first illuminating crystal element 2 is a light emitting diode element and is mounted on the component mounting surface 10 of the first pedestal 1 in the through hole 110 of the reflective cup 11 in a suitable manner so that the first illuminating crystal element 2 is The conductive contacts (not shown) of the first luminescent wafer 2 are electrically connected to the corresponding 15 conductive contacts 12 on the component mounting surface 10 of the susceptor 1. A phosphor layer 4 is disposed in the through hole 110 to cover the first fj illuminating crystal element 2. In the present embodiment, the phosphor layer 4 is adapted to be excited by the light-emitting crystal elements 2, 3 to produce a predetermined color of light. The second pedestal 5 is placed over the reflector cup 11 and is made of a transparent material. The second base 5 has a component mounting surface 50 and a reflective projection 51 mounted on the component mounting surface 50. The second illuminating crystal element 3 is a laser crystal element and is disposed on the component mounting surface 50 of the second pedestal 5 such that light emitted therefrom is reflected to the phosphor powder via the reflective convex body 51. The layer 4 can be excited with the 10 201101532 - phosphor powder of the phosphor layer 4 to emit light of a desired color. - The ninth drawing is a schematic side view showing that the light source package of the fifth embodiment is mounted on an elongated carrier 6 as shown in the third figure. Fig. 10 is a cross-sectional view showing a schematic portion of a light source package of a sixth preferred embodiment of the present invention. Referring to the tenth figure, the light source package includes a carrier 6, a plurality of susceptors 1, and a luminescent wafer 3. The s-mount carrier 6 has a component mounting surface 60 and a plurality of mounting holes 61 extending from the bottom surface 10 thereof to the component mounting surface 60. The susceptors 1 are mounting holes 61 that are mounted on the component mounting surface 6A of the carrier 6 and are aligned. The structure of each of the susceptors 1 is the same as that of the susceptor in the first embodiment. The light-emitting crystal element 3 is disposed outside and 15 light rays emitted by the light-emitting crystal element 3 are transmitted through the plurality of corresponding mounting holes 61 from the light-emitting crystal element 3 via the carrier 6 to the corresponding base 1 The optical fiber 30 of the phosphor layer 4 is transferred to the phosphor layer 4 to be excited with the phosphor of the phosphor layer 4 to emit light of a desired color. Fig. 11 shows a light source package 20 of a seventh preferred embodiment of the present invention. The illuminating source package comprises a luminescent wafer. The luminescent wafer includes a first semiconductor layer 70, a second semiconductor layer 丨, and an industrial sapphire layer 72. In this embodiment, the first semiconductor layer 70 is a p-type (first 11 201101532 conductive type) semiconductor layer, and the second semiconductor layer 71 is a ^ (type second conductivity type) semiconductor layer and It is stacked on the first semiconductor layer 70. The industrial sapphire layer 72 is superposed on the second semiconductor layer 72 and is formed in a suitable manner into a plurality of micropores 720 on the surface opposite to the 5th semiconductor layer 72. The size of the micropores 720 is such that the micropore effect can be achieved if τμιη to several nm. Within each of the microvias 72, the phosphor layer 721 or any layer of material capable of enhancing brightness can be formed to achieve brightness enhancement. It should be noted that the brightening phosphor plus CrTi02 or Cr〇2 or 10 other brightening phosphors or photon crystals and other materials cause the second state or higher fluorescence by the wavelength of the uv led and the wavelength of the laser blue light. excitation. The first state excitation is accomplished by the action of LED UV or blue light. CrTi02 enhances the gain of UV or blue light on the 340-360 nm excitation peak. 15 The second state excitation is a second-state fluorescence excitation of a mixed phosphor or photon crystal by the peak of a laser pulse of 320-450 nm. In addition, a layer of heat-dissipating transparent metal such as ITO may be disposed on the surface of the industrial sapphire layer 72 to enhance the heat conduction of the upper layer and the four sides of the light source package to other metals. 20 $ On the one hand, a layer of a thick film layer can be placed on the surface of the industrial sapphire layer 72, which can cause a blue shift due to nonlinear optical refraction, so that there are 7 in the 520 nm of the county. The 〇nm wavelength is blue shifted to a wavelength of 450 nm. In addition, the light emitted by the illuminating light W can achieve the result of emitting white light as long as it is fitted with the appropriate phosphor material in the micropores 72 〇 12 201101532. Figure 12 is a schematic partial cross-sectional view showing a light source package of an eighth preferred embodiment of the present invention. As shown in the drawing, unlike the seventh embodiment, the light source is further provided with a reflective layer 73 formed on the surface of the semiconductor layer 7 opposite to the second semiconductor 71. It should be noted that the microvias described in the seventh embodiment may be formed on the surface of the first semiconductor layer 7 on which the reflective layer 73 is formed to increase the reflection gain by 65%. Figure 13 is a schematic partial cross-sectional view showing a light source package of a ninth preferred embodiment of the present invention. As shown in the drawing, unlike the seventh embodiment, the light source package further includes a second light emitting crystal cell. The second luminescent wafer has a first semiconductor layer 80 and a second semiconductor layer 81. The first semiconductor layer 80 of the second luminescent wafer is a p-type (first conductive) semi-conductive (four) and is overlaid on a conductor 82 adapted to be electrically connected to an external circuit (10). The first semiconductor layer 7 of the first light-emitting wafer is on a surface opposite to the first semiconductor layer 71, and the second semiconductor layer 81 is a KT-type (second conductivity type) semiconductor layer and is a stack It is disposed on the surface of the first semiconductor layer 8 of the node 20 opposite to the first semiconductor (four) of the first light-emitting cell. The second semiconductor layer 81 for reading the second light-emitting wafer is electrically connected to the second semiconductor layer 71 of the first light-emitting wafer via a conductor 82 adapted to be electrically connected to an external circuit. It should be. In the present embodiment, the first illuminating crystal element and the 13 201101532 5 ❹ 10 second illuminating crystal unit may be a light emitting diode crystal and a laser crystal unit, respectively, or the first illuminating crystal The element and the second luminescent wafer may be the same type of wafer. In summary, the "light source package" of the present invention can achieve the intended purpose and effect by the above-mentioned disclosed structure and device, and is not disclosed in the publication before the application, and is in accordance with the novelty of the invention patent. Progress and other requirements. The drawings and the descriptions of the present invention are merely illustrative of the embodiments of the present invention, and are not intended to limit the embodiments of the present invention; Equivalent changes or modifications should be covered in the scope of the patent application below. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic partial cross-sectional view showing a light source package of a first preferred embodiment of the present invention; 15 FIG. 2 is a diagram showing brightness levels of different light-emitting wafers. The third drawing is a schematic top plan view showing an application of the light source package of the first preferred embodiment of the present invention; and the fourth figure is a light emitting display 20 showing the second preferred embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a schematic partial cross-sectional view showing a light source package according to a third preferred embodiment of the present invention; and FIG. 6 is a fourth preferred embodiment of the present invention. A schematic partial cross-sectional view of a light source package of an embodiment; 14 201101532 FIG. 7 is a diagram showing waveforms of different wavelengths; and FIG. 8 is a light source package showing a fifth preferred embodiment of the present invention; A schematic partial cross-sectional view of a body; a ninth drawing is a schematic partial cross-sectional view showing an application of the light-emitting 5 source package of the fifth preferred embodiment of the present invention; A schematic partial cross-sectional view of a light source package according to a sixth preferred embodiment of the present invention; and a first partial cross-sectional view showing a light source package according to a seventh preferred embodiment of the present invention; Figure 12 is a schematic partial cross-sectional view showing a light source package of an eighth preferred embodiment of the present invention; and a thirteenth view showing a light source package of the ninth preferred embodiment of the present invention A schematic partial cross-sectional view of the body. [Main component symbol description] 1 pedestal 30 optical fiber 10 component mounting surface 5 second pedestal 11 reflective cup 50 component mounting surface 110 through hole 51 reflective projection 12 conductive contact 60 component mounting surface 2 first illuminating wafer 61 mounting Hole 20 Conductor 70 First Semiconductor Layer 3 Second Light Emitting Crystal Cell 71 Second Semiconductor Layer 4 Fluorescent Powder Layer 72 Industrial Sapphire Layer 6 Carrier 720 Micro Hole 15 201101532 73 Reflecting Layer 82 Conductor 80 First Semiconductor Layer 81 Second Semiconductor Floor
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