TW201718916A - Evaporative deposition with improved deposition source - Google Patents

Evaporative deposition with improved deposition source Download PDF

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Publication number
TW201718916A
TW201718916A TW105129969A TW105129969A TW201718916A TW 201718916 A TW201718916 A TW 201718916A TW 105129969 A TW105129969 A TW 105129969A TW 105129969 A TW105129969 A TW 105129969A TW 201718916 A TW201718916 A TW 201718916A
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fluid
deposition
deposition source
receiving
container
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TW105129969A
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Chinese (zh)
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布萊恩 A. 布希
沃夫岡 戴克
佛克D 海德曼
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阿德文泰克全球有限公司
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Publication of TW201718916A publication Critical patent/TW201718916A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material

Abstract

Disclosed is a deposition source for an evaporative deposition vacuum vessel and a method of evaporative deposition wherein a first receptacle is provided including a charge of a first material supported by the first receptacle. The first receptacle is heated to a temperature sufficient to evaporate the first material. The evaporated first material is caused to converge between the first receptacle and a substrate where the evaporated first material is deposited. A second receptacle can be provided that includes a charge of a second material supported by the second receptacle. The second receptacle can be heated to a temperature sufficient to evaporate the second material. The evaporated second material can also be caused to converge between the second receptacle and the substrate where the evaporated second material is deposited. While converging, the evaporated first and second materials can mix prior to being deposited on the substrate.

Description

具有改良式沉積源之蒸發沉積技術Evaporative deposition technology with improved deposition source

本申請案主張2015年9月16日申請之美國臨時專利申請案第62/219,203號之權益,該美國臨時專利申請案之內容以引用方式整體併入本文。The present application claims the benefit of U.S. Provisional Patent Application No. 62/219, 203, filed on Sep. 16, the entire disclosure of which is hereby incorporated by reference.

本申請案針對蒸發沉積系統,且更特定而言針對可使用於該蒸發沉積系統中的沉積源。This application is directed to an evaporative deposition system, and more particularly to a deposition source that can be used in the evaporative deposition system.

陰影遮罩沉積在此項技術中為熟知的且已在微電子元件製造中使用多年。Shadow mask deposition is well known in the art and has been used for many years in the manufacture of microelectronic components.

迄今,如最佳地理解,蒸發沉積系統之先前技術沉積源在基板之大表面區域上沉積蒸發材料,從而需要該等區域或該等區域之部分處於蒸發材料之路徑中持續充分的時間,直至塗佈至所要深度為止。此先前技術方法之問題為所塗佈的基板之每單位區域之不不均勻沉積及較長沉積時間的可能性。Heretofore, as best understood, prior art deposition sources of evaporative deposition systems deposit evaporative material over a large surface area of the substrate, requiring that such regions or portions of such regions remain in the path of the evaporating material for a sufficient period of time until Apply to the desired depth. A problem with this prior art method is the possibility of non-uniform deposition per unit area of the coated substrate and longer deposition time.

現將描述如以下編號條項所闡述之各種較佳及非限制性實例:Various preferred and non-limiting examples as set forth in the following numbered clauses will now be described:

條項1:用於蒸發式沉積真空容器110之沉積源118包含一收容器,該收容器包括至少一接收開口,該至少一接收開口經組配來接收將要蒸發的材料。該收容器包括經組配來接收流體的至少一通道及用以將流體引入通道中之構件,因此包括在接收開口中的材料蒸發。Clause 1: The deposition source 118 for the evaporative deposition vacuum vessel 110 includes a containment vessel including at least one receiving opening that is assembled to receive material to be vaporized. The receptacle includes at least one passageway configured to receive fluid and a member for introducing fluid into the passageway, thereby including evaporation of material in the receiving opening.

條項2:如條項1之沉積源,其中用以引入流體之構件包括:流體源及流體泵。Item 2: The deposition source of item 1, wherein the member for introducing the fluid comprises: a fluid source and a fluid pump.

條項3:如條項1或2之沉積源,其進一步包括間隙158,該間隙藉由接收開口152/176上方的一或多個護板界定,蒸發材料134/134′之流動會通過該接收開口。Clause 3: The deposition source of clause 1 or 2, further comprising a gap 158 defined by one or more shields above the receiving opening 152/176, the flow of the evaporation material 134/134' passing through Receive opening.

條項4:如條項1至3中任一條項之沉積源,其中該一或多個護板包括定位在接收開口152/176上方的至少一煙囪式護板156。Clause 4: The deposition source of any one of clauses 1 to 3, wherein the one or more shields comprise at least one chimney guard 156 positioned above the receiving opening 152/176.

條項5:如條項1至4中任一條項之沉積源,其中該一或多個護板包括至少一側護板154,該至少一側護板自收容器136/166之側面延伸且將煙囪式護板156支撐在接收開口152/176上方。Clause 5: The deposition source of any one of clauses 1 to 4, wherein the one or more panels comprise at least one side panel 154 extending from a side of the container 136/166 and The chimney guard 156 is supported above the receiving opening 152/176.

條項6:如條項1至5中任一條項之沉積源,其進一步包括煙囪式護板156上之流體溝道162。Clause 6: The deposition source of any of clauses 1 to 5, further comprising a fluid channel 162 on the chimney panel 156.

條項7:如條項1至6中任一條項之沉積源,其進一步包括側護板154上之流體溝道160。Clause 7: The deposition source of any of clauses 1 to 6, further comprising a fluid channel 160 on the side shield 154.

條項8:如條項1至7中任一條項之沉積源,其中流體處於低於該流體引入的溫度,但處於足以將材料134/134′加熱至蒸發的溫度。Clause 8: The deposition source of any one of clauses 1 to 7, wherein the fluid is at a temperature below the temperature at which the fluid is introduced, but at a temperature sufficient to heat the material 134/134' to evaporation.

條項9:如條項1至8中任一條項之沉積源,其進一步包括:第二收容器,其包括至少一接收開口,該至少一接收開口經組配來接收將要蒸發的相同材料或不同材料;且第二收容器包括至少一通道,該至少一通道經組配來接收相同流體或不同流體。Clause 9: The deposition source of any one of clauses 1 to 8, further comprising: a second receiving container comprising at least one receiving opening, the at least one receiving opening being assembled to receive the same material to be evaporated or Different materials; and the second receiving container includes at least one channel that is assembled to receive the same fluid or different fluids.

條項10:如條項1至9中任一條項之沉積源,其中:收容器包括兩個通道;且流體於該等兩個通道中以相對方向流動。Clause 10: The deposition source of any one of clauses 1 to 9, wherein: the container comprises two channels; and the fluid flows in opposite directions in the two channels.

條項11:蒸發沉積方法包含:(a)提供第一收容器;(b)提供由第一收容器支撐的第一材料之進料;(c)將第一收容器加熱至足以使第一材料蒸發的溫度;以及(d)使經蒸發的第一材料在第一收容器與基板之間匯合,該經蒸發的第一材料沉積在該基板處。Item 11: The evaporation deposition method comprises: (a) providing a first receiving container; (b) providing a feed of the first material supported by the first receiving container; (c) heating the first receiving container to be sufficient for the first a temperature at which the material evaporates; and (d) merging the evaporated first material between the first containment vessel and the substrate, the vaporized first material being deposited at the substrate.

條項12:如條項11之方法,其中:步驟(a)包括提供第二收容器;步驟(b)包括提供由第二收容器支撐的第二材料之進料;步驟(c)包括將第二收容器加熱至足以使第二材料蒸發的溫度;且步驟(d)包括使經蒸發的第二材料在第二收容器與基板之間匯合,該經蒸發的第二材料沉積在該基板處。Clause 12: The method of clause 11, wherein: step (a) comprises providing a second receiving container; step (b) comprises providing a feed of the second material supported by the second receiving container; and step (c) comprises The second receiving container is heated to a temperature sufficient to evaporate the second material; and step (d) includes converging the evaporated second material between the second receiving container and the substrate, the evaporated second material being deposited on the substrate At the office.

條項13:如條項11或12之方法,其中步驟(d)包括經蒸發的第一材料及經蒸發的第二材料在第一收容器及第二收容器與基板之間匯合。Clause 13: The method of item 11 or 12, wherein the step (d) comprises: evaporating the first material and evaporating the second material to join between the first container and the second container and the substrate.

條項14:如條項11至13中任一條項之方法,其中第一材料及第二材料為相同材料或不同材料。The method of any one of clauses 11 to 13, wherein the first material and the second material are the same material or different materials.

條項15:如條項11至14中任一條項之方法,其中步驟(c)包括:以第一流體加熱第一收容器;及以第二流體加熱第二收容器。The method of any one of clauses 11 to 14, wherein the step (c) comprises: heating the first receiving container with the first fluid; and heating the second receiving container with the second fluid.

條項16:如條項11至15中任一條項之方法,其中:第一流體及第二流體為相同流體或不同流體;且第一流體及第二流體經加熱至相同溫度或不同溫度。The method of any one of clauses 11 to 15, wherein the first fluid and the second fluid are the same fluid or different fluids; and the first fluid and the second fluid are heated to the same temperature or different temperatures.

以下揭示內容將參考附圖,其中相同元件符號對應於相同的或功能等效的元件。The following disclosure will refer to the accompanying drawings in which the same reference

參考圖1A及圖1B,用於將一或多個材料蒸發沉積至基板112上之示例性沉積系統100包括一或多個沉積真空容器110。在圖1A中所示之實例中,沉積系統100包括沉積真空容器110a-110n。然而,沉積真空容器110之數目及配置取決於希望對基板112進行的沉積事件之數目,且在此方面,沉積系統100可包括單個沉積真空容器110。Referring to FIGS. 1A and 1B, an exemplary deposition system 100 for evaporative deposition of one or more materials onto a substrate 112 includes one or more deposition vacuum vessels 110. In the example shown in FIG. 1A, deposition system 100 includes deposition vacuum vessels 110a-110n. However, the number and configuration of deposition vacuum vessels 110 depends on the number of deposition events that are desired to be performed on substrate 112, and in this regard, deposition system 100 can include a single deposition vacuum vessel 110.

在沉積系統100之使用中,基板112 (連續基板薄片或單獨的、獨立基板)以任何適合的及/或合意的方式平移穿過每一沉積真空容器110。在一實例中,呈連續基板薄片形式的基板112經由捲軸至捲軸機構平移穿過每一沉積真空容器110,該捲軸至捲軸機構包括分配捲軸114及捲取捲軸116。圖1A中之示例性沉積系統100包括許多沉積真空容器110a-110n。然而,可設想到包括單個沉積真空容器110的沉積系統100。In use of deposition system 100, substrate 112 (continuous substrate sheets or separate, separate substrates) is translated through each deposition vacuum vessel 110 in any suitable and/or desirable manner. In one example, substrate 112 in the form of a continuous substrate sheet is translated through each deposition vacuum vessel 110 via a spool-to-reel mechanism that includes a dispensing spool 114 and a take-up spool 116. The exemplary deposition system 100 of Figure 1A includes a plurality of deposition vacuum vessels 110a-110n. However, deposition system 100 including a single deposition vacuum vessel 110 is contemplated.

每一沉積真空容器110包括沉積源118、基板夾持具及對準系統120,及在沉積系統100為陰影遮罩氣相沉積系統的情況下之陰影遮罩122。關於沉積系統100的額外背景資訊可見美國專利第7,538,828號。Each deposition vacuum vessel 110 includes a deposition source 118, a substrate holder and alignment system 120, and a shadow mask 122 in the case where the deposition system 100 is a shadow mask vapor deposition system. Additional background information regarding deposition system 100 can be found in U.S. Patent No. 7,538,828.

現將描述用於在沉積真空容器110中使用之改良式沉積源118之實例。An example of an improved deposition source 118 for use in depositing a vacuum vessel 110 will now be described.

參考圖2,示例性沉積真空容器110之示意圖包括基板112及陰影遮罩122,該基板及該陰影遮罩耦接在一起且經由捲軸至捲軸機構在由箭頭130所示之方向上移動。在一實例中,基板夾持具及對準系統120以促進來自沉積源118之蒸發材料132經由陰影遮罩122之一或多個孔洞124成功沉積至基板112上的方式,支撐附接至該基板夾持具及對準系統的基板112及陰影遮罩122。Referring to FIG. 2, a schematic diagram of an exemplary deposition vacuum vessel 110 includes a substrate 112 and a shadow mask 122 that are coupled together and moved in a direction indicated by arrow 130 via a spool-to-reel mechanism. In one example, the substrate holder and alignment system 120 facilitates successful deposition of the evaporation material 132 from the deposition source 118 via the one or more holes 124 of the shadow mask 122 onto the substrate 112, the support being attached thereto The substrate holder and the substrate 112 of the alignment system and the shadow mask 122.

蒸發材料132藉由使已沉積或置放在沉積源118之收容器136中的固體或液體材料134蒸發來形成。為促進材料134之蒸發,在一實例中,可經由循環泵140使用來自熱流體源138的熱流體加熱收容器136。在一實例中,用來加熱收容器136的熱流體可為油,且熱流體源138可經組配來將此油加熱至低於該油之蒸發點的溫度,但加熱至用以加熱材料134使得材料134蒸發且形成蒸發材料132的溫度,該蒸發材料經由陰影遮罩122之一或多個孔洞124沉積在基板112上。加熱諸如油之流體的熱流體源138之描述將不被解釋為限制,因為設想熱流體源138可將任何適合及/或合意的流體加熱至足以使沉積源118之材料134蒸發的溫度。The evaporation material 132 is formed by evaporating a solid or liquid material 134 that has been deposited or placed in a receptacle 136 of the deposition source 118. To facilitate evaporation of material 134, in one example, receptacle 136 can be heated via circulating pump 140 using hot fluid from thermal fluid source 138. In one example, the hot fluid used to heat the receptacle 136 can be oil, and the hot fluid source 138 can be assembled to heat the oil to a temperature below the evaporation point of the oil, but heated to heat the material. 134 causes material 134 to evaporate and form a temperature of evaporation material 132 that is deposited on substrate 112 via one or more holes 124 of shadow mask 122. The description of a heated fluid source 138 that heats a fluid such as oil will not be construed as limiting, as it is contemplated that the hot fluid source 138 can heat any suitable and/or desirable fluid to a temperature sufficient to vaporize the material 134 of the deposition source 118.

最後,真空泵164可耦接至沉積真空容器110,且可操作來充分地排空沉積真空容器110之內部,以促進蒸發材料132經由陰影遮罩122之一或多個孔洞124沉積至基板112上。Finally, vacuum pump 164 can be coupled to deposition vacuum vessel 110 and operative to sufficiently evacuate the interior of deposition vacuum vessel 110 to facilitate deposition of evaporation material 132 onto substrate 112 via one or more apertures 124 of shadow mask 122. .

參考圖3且繼續參考圖1A、圖1B及圖2,收容器136係由適合的導熱材料形成,該適合的導熱材料亦能夠在用來將蒸發材料132沉積至基板112上的真空度處加以利用。在一實例中,收容器136係由銅形成。然而,此並非在限制意義上解釋。Referring to Figure 3 and with continued reference to Figures 1A, 1B and 2, the container 136 is formed from a suitable thermally conductive material that can also be applied to the vacuum used to deposit the evaporation material 132 onto the substrate 112. use. In one example, the receptacle 136 is formed from copper. However, this is not to be construed in a limiting sense.

收容器136包括延伸穿過收容器136的許多通道142。每一通道142包括在收容器136之不同側面144及146上之開口。在圖3中所例示之實例中,每一通道142之開口在收容器136之相對末端處的側面144及146處,且該等許多通道142可彼此平行地延伸。然而,此並非在限制意義上解釋。The receptacle 136 includes a plurality of channels 142 that extend through the receptacle 136. Each channel 142 includes an opening in a different side 144 and 146 of the receptacle 136. In the example illustrated in FIG. 3, the openings of each channel 142 are at sides 144 and 146 at opposite ends of the container 136, and the plurality of channels 142 can extend parallel to each other. However, this is not to be construed in a limiting sense.

在一實例中,一或多個流體輸入導管148及一或多個流體返回導管150經利用來經由循環泵140將熱流體供應至熱流體源138及使熱流體自熱流體源138返回。In one example, one or more fluid input conduits 148 and one or more fluid return conduits 150 are utilized to supply thermal fluid to the thermal fluid source 138 via the circulation pump 140 and to return the thermal fluid from the thermal fluid source 138.

在圖3中所示之實例中,熱流體經由輸入導管148被引入收容器136之兩個側面144及146上之一或多個通道142之開口中。更具體而言,在圖3中所示之實例中,將熱流體在相對的或逆流方向上引入收容器136之交替通道142中,作為避免可能發生在熱流體經輸入到收容器136之例如側面144之相同側面上之每一通道142之開口中時熱斑及冷斑形成於收容器136中的輔助手段。In the example shown in FIG. 3, hot fluid is introduced into the opening of one or more of the channels 142 on both sides 144 and 146 of the receptacle 136 via the input conduit 148. More specifically, in the example shown in FIG. 3, the hot fluid is introduced into the alternating passage 142 of the receptacle 136 in the opposite or countercurrent direction as avoidance of possible entry of the hot fluid through the input to the receptacle 136, for example. An auxiliary means for forming hot spots and cold spots in the receptacle 136 in the opening of each of the channels 142 on the same side of the side 144.

然而,在收容器136之交替通道142中於逆流方向上流動的熱流體之本文描述並非在限制性意義上解釋,因為設想流體可在任何適合的及/或合意的方向上流過每一通道142。However, the description herein of the thermal fluid flowing in the countercurrent direction in the alternate passage 142 of the receptacle 136 is not to be construed in a limiting sense, as it is contemplated that the fluid can flow through each passage 142 in any suitable and/or desirable direction. .

在一實例中,收容器136可包括一或多個接收開口152,該一或多個接收開口可在收容器136之頂部表面中凹入。在此實例中,每一接收開口152可延伸至收容器136之主體中但不與通道142交會。每一接收開口152可經組配來接收將要蒸發成蒸發材料132的固體或液體材料134 (圖2)之進料,該蒸發材料經由陰影遮罩122之一或多個孔洞124沉積於基板112上。在另一實例中,收容器136之頂部表面可包括一或多個接收開口152。在此後者實例中,每一接收開口152可經形成為托盤,該托盤包括平面基底及界定接收開口152之周邊的升起輪緣,該接收開口用於將蒸發來形成蒸發材料132的材料134容置在該接收開口中。In one example, the receptacle 136 can include one or more receiving openings 152 that can be recessed in the top surface of the receptacle 136. In this example, each receiving opening 152 can extend into the body of the receptacle 136 but not intersect the channel 142. Each receiving opening 152 can be configured to receive a feed of solid or liquid material 134 (FIG. 2) to be evaporated into an evaporative material 132 deposited on the substrate 112 via one or more holes 124 of the shadow mask 122. on. In another example, the top surface of the receptacle 136 can include one or more receiving openings 152. In this latter example, each receiving opening 152 can be formed as a tray that includes a planar substrate and a raised rim defining a perimeter of the receiving opening 152 for vaporizing to form a material 134 of the evaporation material 132. It is accommodated in the receiving opening.

在一實例中,沉積源118可包括一或多個選擇性的側護板154及/或一或多個選擇性的煙囪式護板156,其共同地經組配來形成狹長間隙158,蒸發材料132通過該狹長間隙以用於經由陰影遮罩122沉積在基板112上。在一實例中,選擇性的側護板154可自收容器136之相對側面垂直地延伸,而選擇性的煙囪式護板156可自側護板154之頂部邊緣延伸,朝向彼此向內成錐形,且在頂部末端不碰觸的情況下呈隔開關係終止,以形成間隙158。側護板154及自該等側護板154之頂部邊緣延伸的煙囪式護板156之每一組合可為單一件。In one example, deposition source 118 can include one or more selective side shields 154 and/or one or more selective chimney panels 156 that are collectively configured to form elongated gaps 158, evaporating Material 132 passes through the elongated gap for deposition onto substrate 112 via shadow mask 122. In one example, the optional sideguards 154 can extend perpendicularly from opposite sides of the container 136, and the optional chimney panel 156 can extend from the top edge of the side panel 154, taper inward toward each other Shaped and terminated in a spaced relationship without touching the top end to form a gap 158. Each combination of side guard 154 and chimney shroud 156 extending from the top edge of the side shrouds 154 can be a single piece.

設想用來形成間隙158的一或多個側護板154及/或一或多個煙囪式護板156之其他配置。例如,可省略側護板154且間隙158可由一或多個煙囪式護板156單獨形成。在另一實例中,間隙158可經由單個煙囪式護板156形成,該單個煙囪式護板以用來界定間隙158之方式由單一件形成。在另一實例中,可省略側護板154,且煙囪式護板156可朝向彼此向內成錐形以界定間隙158。Other configurations of one or more side shields 154 and/or one or more chimney panels 156 used to form gaps 158 are contemplated. For example, the side guard 154 can be omitted and the gap 158 can be formed separately from one or more chimney panels 156. In another example, the gap 158 can be formed via a single chimney shroud 156 that is formed from a single piece in a manner that defines the gap 158. In another example, the side panels 154 can be omitted and the chimney panels 156 can taper inwardly toward each other to define a gap 158.

因此,用來形成間隙158的一或多個側護板154及/或一或多個煙囪式護板156之所例示配置並非在限制性意義上解釋,因為間隙158之存在及將蒸發材料132之流動限制及集中至間隙158可為合意的。然而,如以上所論述,側護板154及/或煙囪式護板156之使用為選擇性的。Accordingly, the illustrated configuration of one or more side shields 154 and/or one or more chimney panels 156 used to form gap 158 is not to be construed in a limiting sense because of the presence of gap 158 and the evaporation of material 132. Flow restrictions and concentration to the gap 158 may be desirable. However, as discussed above, the use of side guard 154 and/or chimney shroud 156 is optional.

在一實例中,每一側護板154可包括形成在該側護板之表面(合意地與蒸發材料132相對)上的流體溝道160。類似地,每一煙囪式護板156可包括形成在該煙囪式護板之表面(合意地與蒸發材料132相對)上的流體溝道162。每一流體溝道160及162可具有用於耦接至輸入導管148之開口及用於耦接至返回導管150之另一開口,以用於採上述方式經由循環泵140自熱流體源138接收熱流體。另外或替代地,一或兩個流體溝道160及162可耦接至不同熱流體源(未示出)。側護板及煙囪式護板154及156之目的在於將蒸發材料132之流動限制且集中至間隙158,以於基板112及陰影遮罩122在由圖3中之箭頭130所示之方向上經過間隙158期間,在基板112上產生蒸發材料132之較均勻且較厚層。In one example, each side shield 154 can include a fluid channel 160 formed on a surface of the side shield (ideally opposite the evaporation material 132). Similarly, each chimney shroud 156 can include a fluid channel 162 formed on the surface of the chimney shroud (ideally opposite the evaporative material 132). Each fluid channel 160 and 162 can have an opening for coupling to the input conduit 148 and another opening for coupling to the return conduit 150 for receipt from the thermal fluid source 138 via the circulation pump 140 in the manner described above. Hot fluid. Additionally or alternatively, one or both fluid channels 160 and 162 can be coupled to different sources of thermal fluid (not shown). The purpose of the side and chimney guards 154 and 156 is to limit and concentrate the flow of the evaporating material 132 to the gap 158 so that the substrate 112 and the shadow mask 122 pass in the direction indicated by the arrow 130 in FIG. During the gap 158, a relatively uniform and thicker layer of evaporated material 132 is produced on the substrate 112.

流體溝道160及162之目的將使熱流體能夠循環穿過該等流體溝道,以將側護板154及煙囪式護板156之溫度維持在高於蒸發材料132之露點(dew point)的溫度處,藉此防止蒸發材料132凝結在側護板154及煙囪式護板156上。The purpose of fluid channels 160 and 162 is to enable thermal fluid to circulate through the fluid channels to maintain the temperature of side shield 154 and chimney guard 156 above the dew point of evaporation material 132. At the temperature, thereby preventing the evaporation material 132 from condensing on the side guard 154 and the chimney guard 156.

參考圖4且繼續參考所有先前諸圖,另一示例性改良式沉積源118包括藉由收容器166分離的一對收容器136,該收容器藉由收容器166之相對側面上的一對熱分離器168與收容器136分離。熱分離器168可由能夠在將存在於沉積真空容器110內側的真空環境中充當收容器166與收容器136之間的熱絕緣體的任何適合的及/或合意的材料形成。Referring to FIG. 4 and with continued reference to all previous figures, another exemplary modified deposition source 118 includes a pair of receptacles 136 separated by a containment vessel 166 that is heated by a pair of heat on opposite sides of the receptacle 166. Separator 168 is separated from receptacle 136. The thermal separator 168 may be formed of any suitable and/or desirable material that can act as a thermal insulator between the receptacle 166 and the receptacle 136 in a vacuum environment that will be present inside the deposition vacuum vessel 110.

收容器166包括一或多個通道174以促進熱流體穿過收容器166之流動。在一實例中,熱流體源170及循環泵172 (類似於熱流體源138及循環泵140)可被利用來經由一或多個輸入導管178及一或多個返回導管180將熱流體供應至收容器166之通道174。與熱流體源138分離的熱流體源170之使用能有供應至收容器166之頂部表面以用於使沉積在該頂部表面上的材料蒸發的熱之控制。以此方式,可獨立地控制供應至沉積在收容器166之頂部表面上的材料及沉積在每一收容器136之頂部表面上的材料之熱。此在沉積在收容器136及166之頂部表面上的材料在不同溫度處蒸發的情況下為尤其有用的。The receptacle 166 includes one or more passages 174 to facilitate the flow of hot fluid through the receptacle 166. In an example, thermal fluid source 170 and circulation pump 172 (similar to thermal fluid source 138 and circulation pump 140) can be utilized to supply thermal fluid to one or more input conduits 178 and one or more return conduits 180 The channel 174 of the container 166 is closed. The use of a source of thermal fluid 170 separate from the source of hot fluid 138 can have control of the heat supplied to the top surface of the vessel 166 for evaporating the material deposited on the top surface. In this manner, the heat supplied to the material deposited on the top surface of the container 166 and the material deposited on the top surface of each container 136 can be independently controlled. This is especially useful where the material deposited on the top surface of the receptacles 136 and 166 evaporates at different temperatures.

收容器166之頂部表面可包括一或多個接收開口176,類似於收容器136之一或多個接收開口152,其中每一接收開口176可凹入收容器166中,或具有平面基底及界定接收開口176之周邊的升起輪緣。然而,此並非在限制意義上解釋。The top surface of the receptacle 166 can include one or more receiving openings 176, similar to one or more receiving openings 152 of the receiving container 136, wherein each receiving opening 176 can be recessed into the receiving container 166, or have a planar base and define The raised rim of the periphery of the receiving opening 176 is received. However, this is not to be construed in a limiting sense.

參考圖5,現將描述使用沉積源118沉積不同材料。Referring to Figure 5, the deposition of different materials using deposition source 118 will now be described.

在一實例中,以粉末狀OLED材料134進料收容器136之頂部表面,且以粉末狀摻雜劑134'進料收容器166之頂部表面。經由引入通道142中的熱流體,收容器136經加熱至足以使沉積在收容器136之頂部表面上的OLED材料134蒸發的溫度。同時,熱流體經引入通道174中以將收容器166加熱至足以使摻雜材料134'蒸發的溫度。經蒸發的摻雜材料134'及經蒸發的OLED材料134在間隙158處匯合且混合,以形成經由陰影遮罩122之一或多個孔洞124沉積在基板112上的蒸發材料132。In one example, the top surface of the container 136 is fed as a powdered OLED material 134 and the top surface of the container 166 is fed as a powdered dopant 134'. The via 136 is heated to a temperature sufficient to vaporize the OLED material 134 deposited on the top surface of the receptacle 136 via the hot fluid introduced into the channel 142. At the same time, hot fluid is introduced into channel 174 to heat vessel 166 to a temperature sufficient to vaporize dopant material 134'. The evaporated dopant material 134' and the evaporated OLED material 134 merge and mix at the gap 158 to form an evaporation material 132 deposited on the substrate 112 via one or more holes 124 of the shadow mask 122.

如可見的,側護板154及煙囪式護板156將經蒸發的OLED材料134之流動朝向經蒸發的摻雜材料134'之流動推動,因此經蒸發的OLED材料134及經蒸發的摻雜材料134'在間隙158處匯合且流動穿過該間隙,用以經由陰影遮罩122沉積在基板112上。As can be seen, the side shield 154 and the chimney shield 156 push the flow of the vaporized OLED material 134 toward the flow of the evaporated dopant material 134', thus the evaporated OLED material 134 and the evaporated dopant material. 134' meets at gap 158 and flows through the gap for deposition onto substrate 112 via shadow mask 122.

在一實例中,代替兩個收容器136及單個收容器166,如圖4及圖5之實例中所示,可設想到的是沉積源118可在認為對於形成將要沉積至基板112上的蒸發材料132適合且合意的任何配置中包括兩個收容器134/166或多於三個收容器134/166。In one example, instead of two receptacles 136 and a single receptacle 166, as shown in the examples of Figures 4 and 5, it is contemplated that deposition source 118 can be considered to form an evaporation to be deposited onto substrate 112. Any configuration that is suitable and desirable for material 132 includes two receptacles 134/166 or more than three receptacles 134/166.

在一實例中,圖4及圖5中之收容器136及166之溫度可藉由供應至通道142及174的熱流體獨立地控制,使得材料134及134'之進料可以用來達成所要的摻雜位準之速率而蒸發。在對於每Y份OLED材料134需要X份摻雜劑材料134'的一實例中,收容器136及166之溫度可藉由控制藉由熱流體源138及170輸出至通道142及174的熱流體之溫度來獨立地控制,使得對於每Y份OLED材料134蒸發X份摻雜劑材料134'。In one example, the temperatures of the receptacles 136 and 166 of Figures 4 and 5 can be independently controlled by the thermal fluid supplied to the passages 142 and 174 so that the feed of materials 134 and 134' can be used to achieve the desired Evaporate at a rate of doping level. In an example where X parts of dopant material 134' are required for each Y parts of OLED material 134, the temperatures of receiving vessels 136 and 166 can be controlled by the hot fluids output to channels 142 and 174 by thermal fluid sources 138 and 170. The temperature is independently controlled such that X parts of dopant material 134' are evaporated for each Y parts of OLED material 134.

在一實例中,真空泵164耦接至每一沉積真空容器110,且操作來促進大氣自沉積真空容器110之內部之排空。出於例示之簡單起見,在圖3至圖5中未展示真空泵164。In one example, a vacuum pump 164 is coupled to each deposition vacuum vessel 110 and is operative to facilitate evacuation of the interior of the atmosphere from the deposition vacuum vessel 110. Vacuum pump 164 is not shown in Figures 3 through 5 for simplicity of illustration.

在圖3至圖5中所示之實例中,側護板154及煙囪式護板156為選擇性的。例如,在圖3中所示之實例中,可省略側護板154及煙囪式護板156,因此蒸發材料132可在無藉由側護板154及煙囪式護板156提供的匯合的情況下,經由陰影遮罩122直接沉積在基板112上。In the example shown in Figures 3 through 5, side guard 154 and chimney guard 156 are optional. For example, in the example shown in FIG. 3, the side guard 154 and the chimney guard 156 may be omitted, so that the evaporative material 132 may be without the confluence provided by the side guard 154 and the chimney guard 156. It is deposited directly on the substrate 112 via the shadow mask 122.

已參考各種圖描述實例。其他技術者在閱讀及理解前述實例後將想起修改及變更。因此,前述實例並非解釋為限制此揭示內容。Examples have been described with reference to various figures. Other artisans will recognize modifications and alterations after reading and understanding the foregoing examples. Therefore, the foregoing examples are not to be construed as limiting the disclosure.

100‧‧‧沉積系統
110‧‧‧(蒸發式)沉積真空容器
110a~110n‧‧‧沉積真空容器
112‧‧‧基板
114‧‧‧分配捲軸
116‧‧‧捲取捲軸
118‧‧‧沉積源
120‧‧‧基板夾持具及對準系統
122‧‧‧陰影遮罩
124‧‧‧孔洞
130‧‧‧箭頭
132‧‧‧蒸發材料
134‧‧‧(粉末狀)OLED材料/(蒸發)材料
134'‧‧‧粉末狀摻雜劑/摻雜(劑)材料/(蒸發)材料
136、166‧‧‧收容器
138、170‧‧‧熱流體源
140、172‧‧‧循環泵
142、174‧‧‧通道
144、146‧‧‧側面
148‧‧‧(流體)輸入導管
150‧‧‧(流體)返回導管
152、176‧‧‧接收開口
154‧‧‧側護板
156‧‧‧煙囪式護板
158‧‧‧(狹長)間隙
160、162‧‧‧流體溝道
164‧‧‧真空泵
168‧‧‧熱分離器
178‧‧‧輸入導管
180‧‧‧返回導管
100‧‧‧Deposition system
110‧‧‧(evaporative) deposition vacuum vessel
110a~110n‧‧‧deposition vacuum container
112‧‧‧Substrate
114‧‧‧Distribution reel
116‧‧‧Reel reel
118‧‧‧Sedimentary source
120‧‧‧Substrate holder and alignment system
122‧‧‧ Shadow mask
124‧‧‧ holes
130‧‧‧ arrow
132‧‧‧Evaporation materials
134‧‧‧(powdered) OLED material / (evaporation) material
134'‧‧‧ powdered dopant/doping (agent) material / (evaporation) material
136, 166‧‧ ‧ container
138, 170‧‧‧ Thermal fluid source
140, 172‧‧ Circulating pump
142, 174‧‧ channels
144, 146‧‧‧ side
148‧‧‧ (fluid) input catheter
150‧‧‧(fluid) return catheter
152, 176‧‧‧ receiving openings
154‧‧‧Side guard
156‧‧‧ Chimney guard
158‧‧ (small) gap
160, 162‧‧‧ fluid channel
164‧‧‧vacuum pump
168‧‧‧Hot separator
178‧‧‧Input catheter
180‧‧‧Return catheter

圖1(圖1A及1B)為示例性蒸發沉積系統的示意圖;Figure 1 (Figures 1A and 1B) is a schematic illustration of an exemplary vapor deposition system;

圖2為圖1之沉積系統之示例性沉積真空容器的示意圖;Figure 2 is a schematic illustration of an exemplary deposition vacuum vessel of the deposition system of Figure 1;

圖3為可用在圖2中所示之沉積真空容器中的一示例性沉積源操作上配合具有陰影遮罩之一基板之示意型態的隔離透視圖,該基板在沉積源之頂部處的間隙上方平移;3 is an isolated perspective view of an exemplary deposition source that can be used in the deposition vacuum vessel shown in FIG. 2 to operatively cooperate with a substrate having a shadow mask, the substrate having a gap at the top of the deposition source. Pan up

圖4為可替換圖3中所示之示例性沉積源而使用的另一示例性沉積源的隔離透視圖;以及4 is an isolated perspective view of another exemplary deposition source that can be used in place of the exemplary deposition source shown in FIG. 3;

圖5為圖4之示例性沉積源操作上配合具有陰影遮罩之一基板之示意型態的橫截面,該基板在沉積源之頂部處的間隙上方平移。5 is a cross-sectional view of the exemplary deposition source of FIG. 4 operatively mated with a substrate having a shadow mask that translates over a gap at the top of the deposition source.

110‧‧‧(蒸發式)沉積真空容器 110‧‧‧(evaporative) deposition vacuum vessel

112‧‧‧基板 112‧‧‧Substrate

118‧‧‧沉積源 118‧‧‧Sedimentary source

122‧‧‧陰影遮罩 122‧‧‧ Shadow mask

130‧‧‧箭頭 130‧‧‧ arrow

132‧‧‧蒸發材料 132‧‧‧Evaporation materials

134‧‧‧(粉末狀)OLED材料/(蒸發)材料 134‧‧‧(powdered) OLED material / (evaporation) material

134'‧‧‧粉末狀摻雜劑/摻雜(劑)材料/(蒸發)材料 134'‧‧‧ powdered dopant/doping (agent) material / (evaporation) material

136、166‧‧‧收容器 136, 166‧‧ ‧ container

142、174‧‧‧通道 142, 174‧‧ channels

148‧‧‧(流體)輸入導管 148‧‧‧ (fluid) input catheter

154‧‧‧側護板 154‧‧‧Side guard

156‧‧‧煙囪式護板 156‧‧‧ Chimney guard

158‧‧‧(狹長)間隙 158‧‧ (small) gap

160、162‧‧‧流體溝道 160, 162‧‧‧ fluid channel

Claims (16)

一種用於蒸發式沉積真空容器之沉積源,該沉積源包含: 一收容器,其包括至少一接收開口,該至少一接收開口經組配來接收將要蒸發的一材料; 該收容器包括至少一通道,該至少一通道經組配來接收一流體;以及 用以將該流體引入該通道中之構件,因此蒸發包括在該接收開口中的該材料。A deposition source for an evaporative deposition vacuum vessel, the deposition source comprising: a receiving container including at least one receiving opening, the at least one receiving opening being assembled to receive a material to be evaporated; the receiving container comprising at least one a channel, the at least one channel being configured to receive a fluid; and a member for introducing the fluid into the channel, thereby evaporating the material included in the receiving opening. 如請求項1之沉積源,其中用以引入該流體之該構件包括: 一流體源;以及 一泵。The deposition source of claim 1, wherein the means for introducing the fluid comprises: a fluid source; and a pump. 如請求項1之沉積源,其進一步包括一間隙,該間隙係藉由該接收開口上方的一或多個護板界定,經蒸發材料之一流動會通過該接收開口。The deposition source of claim 1, further comprising a gap defined by one or more shields above the receiving opening through which one of the evaporating materials flows. 如請求項3之沉積源,其中該一或多個護板包括至少一煙囪式護板,該至少一煙囪式護板係定位在該接收開口上方。The deposition source of claim 3, wherein the one or more panels comprise at least one chimney panel, the at least one chimney panel being positioned above the receiving opening. 如請求項4之沉積源,其中該一或多個護板包括至少一側護板,該至少一側護板自該收容器之一側面延伸,且支撐在該接收開口上方之該煙囪式護板。The deposition source of claim 4, wherein the one or more shields comprise at least one side shield extending from a side of the receptacle and supporting the chimney over the receiving opening board. 如請求項4之沉積源,其進一步包括該煙囪式護板上之一流體溝道。The deposition source of claim 4, further comprising a fluid channel on the chimney shield. 如請求項5之沉積源,其進一步包括在該側護板上之一流體溝道。The deposition source of claim 5, further comprising a fluid channel on the side shield. 如請求項1之沉積源,其中該流體處於低於該流體之引入的一溫度,但處於足以將該材料加熱至蒸發的一溫度。A deposition source as claimed in claim 1, wherein the fluid is at a temperature below the introduction of the fluid but at a temperature sufficient to heat the material to evaporation. 如請求項1之沉積源,其進一步包括: 一第二收容器,其包括至少一接收開口,該至少一接收開口經組配來接收將要蒸發的相同材料或一不同材料;以及 該第二收容器包括至少一通道,該至少一通道經組配來接收相同流體或一不同流體。The deposition source of claim 1, further comprising: a second receiving container including at least one receiving opening, the at least one receiving opening being assembled to receive the same material or a different material to be evaporated; and the second receiving The container includes at least one channel that is assembled to receive the same fluid or a different fluid. 如請求項1之沉積源,其中: 該收容器包括兩個通道;且 流體於該等兩個通道中以相對方向流動。The deposition source of claim 1, wherein: the container comprises two channels; and the fluid flows in opposite directions in the two channels. 一種蒸發沉積方法,其包含下列步驟: (a)提供一第一收容器; (b)提供由該第一收容器支撐的一第一材料之一進料; (c)將該第一收容器加熱至足以使該第一材料蒸發的一溫度;以及 (d)使經蒸發的第一材料在該第一收容器與一基板之間匯合,該經蒸發的第一材料沉積在該基板處。An evaporation deposition method comprising the steps of: (a) providing a first receiving container; (b) providing a feed of a first material supported by the first receiving container; (c) providing the first receiving container Heating to a temperature sufficient to vaporize the first material; and (d) converging the vaporized first material between the first container and a substrate, the vaporized first material being deposited at the substrate. 如請求項11之方法,其中: 步驟(a)包括提供一第二收容器; 步驟(b)包括提供由該第二收容器支撐的一第二材料之一進料; 步驟(c)包括將該第二收容器加熱至足以使該第二材料蒸發的一溫度;且 步驟(d)包括使經蒸發的第二材料在該第二收容器與該基板之間匯合,該經蒸發的第二材料沉積在該基板處。The method of claim 11, wherein: the step (a) comprises providing a second receiving container; the step (b) comprises providing one of the second materials supported by the second receiving container; the step (c) comprising The second receiving container is heated to a temperature sufficient to vaporize the second material; and step (d) includes converging the evaporated second material between the second receiving container and the substrate, the evaporated second Material is deposited at the substrate. 如請求項12之方法,其中步驟(d)包括該經蒸發的第一材料及該經蒸發的第二材料在該第一收容器及該第二收容器與該基板之間匯合。The method of claim 12, wherein the step (d) comprises the vaporizing the first material and the evaporated second material joining between the first receiving container and the second receiving container and the substrate. 如請求項12之方法,其中該第一材料及該第二材料為相同材料或不同材料。The method of claim 12, wherein the first material and the second material are the same material or different materials. 如請求項12之方法,其中步驟(c)包括: 以一第一流體加熱該第一收容器;以及 以一第二流體加熱該第二收容器。The method of claim 12, wherein the step (c) comprises: heating the first receiving container with a first fluid; and heating the second receiving container with a second fluid. 如請求項15之方法,其中: 該第一流體及該第二流體為相同流體或不同流體;且 該第一流體及該第二流體經加熱至相同溫度或不同溫度。The method of claim 15, wherein: the first fluid and the second fluid are the same fluid or different fluids; and the first fluid and the second fluid are heated to the same temperature or different temperatures.
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