TW201712872A - Source fermi filter field effect transistor - Google Patents

Source fermi filter field effect transistor

Info

Publication number
TW201712872A
TW201712872A TW105115060A TW105115060A TW201712872A TW 201712872 A TW201712872 A TW 201712872A TW 105115060 A TW105115060 A TW 105115060A TW 105115060 A TW105115060 A TW 105115060A TW 201712872 A TW201712872 A TW 201712872A
Authority
TW
Taiwan
Prior art keywords
source
field effect
fermi filter
effect transistor
filter field
Prior art date
Application number
TW105115060A
Other languages
English (en)
Inventor
Uygar E Avci
Ian A Young
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201712872A publication Critical patent/TW201712872A/zh

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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Memories (AREA)
TW105115060A 2015-06-22 2016-05-16 Source fermi filter field effect transistor TW201712872A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2015/036950 WO2016209202A1 (en) 2015-06-22 2015-06-22 Source fermi filter field effect transistor

Publications (1)

Publication Number Publication Date
TW201712872A true TW201712872A (en) 2017-04-01

Family

ID=57586085

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105115060A TW201712872A (en) 2015-06-22 2016-05-16 Source fermi filter field effect transistor

Country Status (6)

Country Link
US (1) US10236345B2 (zh)
EP (1) EP3311419A4 (zh)
KR (1) KR102385238B1 (zh)
CN (1) CN107787525B (zh)
TW (1) TW201712872A (zh)
WO (1) WO2016209202A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10998338B2 (en) 2018-11-13 2021-05-04 Micron Technology, Inc. Integrated assemblies having ferroelectric transistors with heterostructure active regions
KR102158187B1 (ko) * 2019-01-30 2020-09-22 한경대학교 산학협력단 나노 와이어 기반 이종 터널 전계효과 트랜지스터

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561387A (en) * 1995-07-26 1996-10-01 Taiwan Semiconductor Manufacturing Company Ltd Method for measuring gate insulation layer thickness
US8441000B2 (en) * 2006-02-01 2013-05-14 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
JP5171161B2 (ja) * 2006-09-15 2013-03-27 アイメック ナノワイヤトンネル電界効果トランジスタ半導体装置およびその製造方法
US8362604B2 (en) * 2008-12-04 2013-01-29 Ecole Polytechnique Federale De Lausanne (Epfl) Ferroelectric tunnel FET switch and memory
US8405121B2 (en) * 2009-02-12 2013-03-26 Infineon Technologies Ag Semiconductor devices
EP2267782A3 (en) 2009-06-24 2013-03-13 Imec Control of tunneling junction in a hetero tunnel field effect transistor
CN102174706A (zh) * 2011-01-05 2011-09-07 刘文祥 半导序体
CN103094338B (zh) * 2011-11-01 2015-09-09 中国科学院微电子研究所 半导体器件及其制造方法
US8890120B2 (en) 2012-11-16 2014-11-18 Intel Corporation Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs

Also Published As

Publication number Publication date
CN107787525A (zh) 2018-03-09
CN107787525B (zh) 2022-08-02
US20180301533A1 (en) 2018-10-18
US10236345B2 (en) 2019-03-19
KR20180019074A (ko) 2018-02-23
KR102385238B1 (ko) 2022-04-12
WO2016209202A1 (en) 2016-12-29
EP3311419A4 (en) 2019-02-20
EP3311419A1 (en) 2018-04-25

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