TW201707858A - Chemical mechanical polishing apparatus and method - Google Patents
Chemical mechanical polishing apparatus and method Download PDFInfo
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- TW201707858A TW201707858A TW104128599A TW104128599A TW201707858A TW 201707858 A TW201707858 A TW 201707858A TW 104128599 A TW104128599 A TW 104128599A TW 104128599 A TW104128599 A TW 104128599A TW 201707858 A TW201707858 A TW 201707858A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
本發明是有關於一種化學機械研磨裝置與方法，且特別是有關於一種具有分離器的化學機械研磨裝置與方法。This invention relates to a chemical mechanical polishing apparatus and method, and more particularly to a chemical mechanical polishing apparatus and method having a separator.
化學機械研磨（Chemical Mechanical Polish）製程主要為利用研磨液中所含的微小研磨顆粒與晶片表面進行摩擦產生機械應力，並根據不同的晶片表面在研磨液中加入相對應的化學添加劑， 以移除晶片表面上的待移除部分， 從而達到增強研磨和選擇性研磨的效果。The chemical mechanical polishing process mainly uses the micro-abrasive particles contained in the polishing liquid to rub against the surface of the wafer to generate mechanical stress, and according to different wafer surfaces, the corresponding chemical additives are added to the polishing liquid to remove The portion to be removed on the surface of the wafer to achieve enhanced polishing and selective grinding.
隨著半導體元件尺寸微縮，對於缺陷及研磨品質要求日益嚴苛。現行化學機械研磨裝置的研磨液供應裝置僅能夠將研磨液單點注入在研磨墊上，並藉由研磨平台旋轉的離心力，將研磨液塗佈在研磨墊上。然而，經研磨過的舊研磨液僅能憑藉研磨平台旋轉的離心力被甩離研磨平台。如此一來，研磨過的部分舊研磨液將會與新研磨液混合，而再次進行研磨步驟。由於現行化學機械研磨裝置無法有效地將新、舊研磨液分離，因此，如何提供一種化學機械研磨裝置與方法，其能有效分離新、舊研磨液，進而減少缺陷並提升研磨效率與品質將成為重要的一門課題。As semiconductor components shrink in size, defects and polishing quality requirements are becoming more stringent. The slurry supply device of the current chemical mechanical polishing apparatus can only inject a single point of the polishing liquid onto the polishing pad, and apply the polishing liquid to the polishing pad by the centrifugal force of the rotation of the polishing platform. However, the milled old slurry can only be removed from the grinding platform by the centrifugal force of the rotation of the grinding platform. As a result, the ground portion of the old slurry will be mixed with the new slurry and the grinding step will be performed again. Since the current chemical mechanical polishing device cannot effectively separate the new and old polishing liquids, how to provide a chemical mechanical polishing device and method capable of effectively separating new and old polishing liquids, thereby reducing defects and improving polishing efficiency and quality will become An important topic.
本發明提供一種具有分離器的化學機械研磨裝置與方法，其能有效分離新、舊研磨液，進而減少缺陷並提升研磨效率與品質。The invention provides a chemical mechanical polishing device and method with a separator, which can effectively separate new and old grinding liquids, thereby reducing defects and improving grinding efficiency and quality.
本發明提供一種化學機械研磨裝置包括：研磨台、研磨墊、研磨頭、調節器、研磨液供應裝置以及分離器。研磨墊配置於研磨台上，用以研磨晶圓。研磨頭配置於研磨墊上，用以承載晶圓使其與研磨墊接觸。調節器配置於研磨墊上，用以調節研磨墊。研磨液供應裝置用以提供研磨液。分離器配置於研磨頭與調節器之間的研磨墊上。分離器的第一端靠近研磨墊的圓心，分離器的第二端靠近研磨墊的圓周。分離器包括注入部以及開口部。注入部靠近分離器的第一端，且與研磨液供應裝置連接。開口部配置於注入部與研磨墊之間，用以塗佈研磨液於研磨墊上。The present invention provides a chemical mechanical polishing apparatus comprising: a polishing table, a polishing pad, a polishing head, a regulator, a slurry supply device, and a separator. The polishing pad is disposed on the polishing table to polish the wafer. The polishing head is disposed on the polishing pad to carry the wafer into contact with the polishing pad. The adjuster is disposed on the polishing pad to adjust the polishing pad. A slurry supply device is used to provide the slurry. The separator is disposed on the polishing pad between the polishing head and the regulator. The first end of the separator is adjacent the center of the polishing pad, and the second end of the separator is adjacent the circumference of the polishing pad. The separator includes an injection portion and an opening portion. The injection portion is adjacent to the first end of the separator and is coupled to the slurry supply device. The opening is disposed between the injection portion and the polishing pad to apply the polishing liquid to the polishing pad.
在本發明的一實施例中，上述開口部為條狀開口。條狀開口自分離器的第一端延伸至分離器的第二端。In an embodiment of the invention, the opening is a strip opening. A strip opening extends from the first end of the separator to the second end of the separator.
在本發明的一實施例中，上述研磨液從注入部注入條狀開口中，並從條狀開口沿著第一方向連續分布在研磨墊上。In an embodiment of the invention, the polishing liquid is injected into the strip opening from the injection portion and continuously distributed on the polishing pad from the strip opening along the first direction.
在本發明的一實施例中，上述研磨液靠近第一端的厚度大於靠近第二端的厚度。In an embodiment of the invention, the slurry has a thickness near the first end that is greater than a thickness near the second end.
在本發明的一實施例中，上述分離器平貼在研磨墊的頂面上。In an embodiment of the invention, the separator is placed flat on the top surface of the polishing pad.
在本發明的一實施例中，上述化學機械研磨裝置更包括高壓液體清洗裝置配置於研磨墊上，用以輸送高壓液體至研磨墊上，以去除研磨墊上的研磨液與雜質。In an embodiment of the invention, the chemical mechanical polishing apparatus further includes a high-pressure liquid cleaning device disposed on the polishing pad for conveying the high-pressure liquid to the polishing pad to remove the polishing liquid and impurities on the polishing pad.
本發明提供一種化學機械研磨方法用以研磨晶圓。上述化學機械研磨方法的步驟如下。提供研磨墊於研磨台上。藉由配置在研磨墊上的研磨頭，以承載晶圓使其與研磨墊接觸。藉由配置於研磨墊上的調節器，以調節研磨墊。藉由研磨液供應裝置提供第一研磨液。藉由配置於研磨頭與調節器之間的研磨墊上的分離器，以分離經研磨過的部分第一研磨液與未經研磨過的第二研磨液。上述分離器的第一端靠近研磨墊的圓心，分離器的第二端靠近研磨墊的圓周。上述分離器包括注入部以及開口部。注入部靠近分離器的第一端，且與研磨液供應裝置連接。開口部配置於注入部與研磨墊之間。The present invention provides a chemical mechanical polishing method for polishing a wafer. The steps of the above chemical mechanical polishing method are as follows. A polishing pad is provided on the polishing table. The wafer is placed in contact with the polishing pad by a polishing head disposed on the polishing pad. The polishing pad is adjusted by a regulator disposed on the polishing pad. The first slurry is supplied by a slurry supply device. The milled portion of the first slurry and the unground second slurry are separated by a separator disposed on the polishing pad between the polishing head and the regulator. The first end of the separator is adjacent to the center of the polishing pad, and the second end of the separator is adjacent to the circumference of the polishing pad. The separator includes an injection portion and an opening portion. The injection portion is adjacent to the first end of the separator and is coupled to the slurry supply device. The opening is disposed between the injection portion and the polishing pad.
在本發明的一實施例中，分離經研磨過的部分第一研磨液與未經研磨過的第二研磨液的步驟如下。將第一研磨液從注入部注入開口部中。旋轉研磨台，使得研磨台上的研磨墊沿著第一方向旋轉。同時第一研磨液自分離器的第一表面沿著第一方向連續分布在研磨墊上。將晶圓與研磨墊接觸，以進行研磨。經研磨過的部分第一研磨液被阻擋在分離器的第二表面，並藉由研磨台旋轉的離心力移除經研磨過的部分第一研磨液。將第二研磨液從注入部注入開口部中，使得第二研磨液自分離器的第一表面沿著第一方向連續分布在研磨墊上。In an embodiment of the invention, the step of separating the ground portion of the first slurry and the second slurry that has not been ground is as follows. The first polishing liquid is injected into the opening from the injection portion. The polishing table is rotated such that the polishing pad on the polishing table rotates in the first direction. At the same time, the first slurry is continuously distributed from the first surface of the separator along the first direction on the polishing pad. The wafer is brought into contact with the polishing pad for grinding. The ground portion of the ground first slurry is blocked on the second surface of the separator, and the ground portion of the ground slurry is removed by centrifugal force of rotation of the polishing table. The second polishing liquid is injected into the opening portion from the injection portion such that the second polishing liquid is continuously distributed on the polishing pad from the first surface of the separator in the first direction.
在本發明的一實施例中，上述開口部為條狀開口。條狀開口自分離器的第一端延伸至分離器的第二端。In an embodiment of the invention, the opening is a strip opening. A strip opening extends from the first end of the separator to the second end of the separator.
在本發明的一實施例中，在進行研磨時，上述分離器為固定不動。In an embodiment of the invention, the separator is stationary during polishing.
基於上述，本發明可藉由分離器以分離經研磨過的部分第一研磨液與未經研磨過的第二研磨液，其能有效分離新、舊研磨液，進而減少缺陷並提升研磨效率與品質。另外，本發明之分離器具有注入部以及開口部。由於注入部與研磨液供應裝置連接，因此，上述分離器可用以塗佈研磨液於研磨墊上。而且開口部為條狀開口，相較於習知研磨液的單點注入，本發明亦可提升研磨液塗佈的均勻度，且減少研磨液的使用量，以降低製程成本。Based on the above, the present invention can separate the ground portion of the first slurry and the unground second slurry by a separator, which can effectively separate the new and old slurry, thereby reducing defects and improving the polishing efficiency. quality. Further, the separator of the present invention has an injection portion and an opening portion. Since the injection portion is connected to the slurry supply device, the separator can be used to apply the slurry to the polishing pad. Moreover, the opening portion is a strip-shaped opening. Compared with the single-point injection of the conventional polishing liquid, the present invention can also improve the uniformity of the coating of the polishing liquid and reduce the usage amount of the polishing liquid to reduce the process cost.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
圖1為本發明之一實施例的一種化學機械研磨裝置的上視示意圖。圖2為圖1之A-A’線的剖面示意圖。圖3為圖1 之分離器的立體透視示意圖。圖4 為圖3 之第二表面的透視示意圖。1 is a top plan view of a chemical mechanical polishing apparatus according to an embodiment of the present invention. Figure 2 is a schematic cross-sectional view taken along line A-A' of Figure 1. Figure 3 is a perspective, perspective view of the separator of Figure 1. Figure 4 is a perspective schematic view of the second surface of Figure 3.
請參照圖1與圖2，本實施例提供一種化學機械研磨裝置10包括：研磨台100、研磨墊102、研磨頭104、調節器106、研磨液供應裝置116以及分離器110。研磨墊102配置於研磨台100上，用以研磨晶圓W。研磨台100是透過一旋轉軸（未繪示）而帶動研磨墊102沿著第一方向D1旋轉，並搭配各種研磨液，以對晶圓W或是半導體製程中需要平坦化（Plantation）的結構，進行化學機械研磨製程。在一實施例中，研磨墊102的材料可例如是聚合材料。Referring to FIG. 1 and FIG. 2 , the embodiment provides a chemical mechanical polishing apparatus 10 including a polishing table 100 , a polishing pad 102 , a polishing head 104 , a regulator 106 , a slurry supply device 116 , and a separator 110 . The polishing pad 102 is disposed on the polishing table 100 for polishing the wafer W. The polishing table 100 rotates the polishing pad 102 along the first direction D1 through a rotating shaft (not shown), and is matched with various polishing liquids to form a structure for the wafer W or the semiconductor process. , performing a chemical mechanical polishing process. In an embodiment, the material of the polishing pad 102 can be, for example, a polymeric material.
研磨頭104配置於研磨墊102上，用以承載晶圓W使其與研磨墊102接觸。詳細地說，如圖2所示，研磨頭104可吸附晶圓W，使得晶圓W的正面朝下，以接觸研磨墊102的表面來進行研磨。在一實施例中，研磨頭104可沿著第二方向D2旋轉，進而帶動晶圓W本身旋轉，以避免晶圓W表面產生錐狀外形。在一實施例中，第一方向D1與第二方向D2可例如是相同的逆時鐘方向或順時鐘方向。此外，研磨頭104亦會沿著相對於研磨墊102半徑方向來回擺動（sweep），以提升研磨後的晶圓W表面的平坦度。The polishing head 104 is disposed on the polishing pad 102 for carrying the wafer W in contact with the polishing pad 102. In detail, as shown in FIG. 2, the polishing head 104 can adsorb the wafer W such that the front side of the wafer W faces downward to contact the surface of the polishing pad 102 for polishing. In one embodiment, the polishing head 104 can be rotated along the second direction D2 to drive the wafer W itself to rotate to avoid a tapered shape on the surface of the wafer W. In an embodiment, the first direction D1 and the second direction D2 may be, for example, the same counterclockwise direction or clockwise direction. In addition, the polishing head 104 also sweeps back and forth in a radial direction with respect to the polishing pad 102 to enhance the flatness of the surface of the wafer W after polishing.
調節器106配置於研磨墊102上，用以調節研磨墊102表面的纖維結構保持在直立狀態（亦即活化）並盡可能具有彈性，以維持研磨墊102對晶圓W的研磨速率與穩定度。在一實施例中，調節器106亦會沿著相對於研磨墊102半徑方向來回擺動。在一實施例中，研磨頭104與調節器106並不會干擾彼此的擺動。The adjuster 106 is disposed on the polishing pad 102 for adjusting the fiber structure of the surface of the polishing pad 102 to be in an upright state (ie, activated) and as elastic as possible to maintain the polishing rate and stability of the wafer W to the wafer W. . In an embodiment, the adjuster 106 will also oscillate back and forth along a radial direction relative to the polishing pad 102. In an embodiment, the polishing head 104 and the regulator 106 do not interfere with each other's oscillations.
分離器110配置於研磨頭104與調節器106之間的研磨墊102上。在一實施例中，分離器110的位置以不影響研磨頭104與調節器106的擺動為主，其可依使用者需求來設計。詳細地說，如圖1所示，分離器110的第一端E1靠近研磨墊102的圓心，分離器110的第二端E2靠近研磨墊102的圓周。The separator 110 is disposed on the polishing pad 102 between the polishing head 104 and the regulator 106. In one embodiment, the position of the separator 110 is primarily such that it does not affect the oscillation of the polishing head 104 and the regulator 106, which can be designed according to user requirements. In detail, as shown in FIG. 1, the first end E1 of the separator 110 is near the center of the polishing pad 102, and the second end E2 of the separator 110 is adjacent to the circumference of the polishing pad 102.
請參照圖1至圖4，從第二表面S2的視角來看，分離器110包括注入部112以及開口部114。注入部112靠近分離器110的第一端E1，且與研磨液供應裝置116連接（如圖1、2所示）。在一實施例中，注入部112可例如是一中空管路，其配置在分離器110中，用以連接研磨液供應裝置116與開口部114（如圖3所示）。開口部114配置於注入部112與研磨墊102之間。開口部114的底面暴露研磨墊102的表面。在一實施例中，開口部114可例如是條狀開口，其配置在分離器110中。所述條狀開口自分離器110的第一端E1延伸至分離器110的第二端E2（如圖4所示）。在一實施例中，開口部114可例如是一中空腔體，用以容置研磨液供應裝置116所提供的研磨液200。Referring to FIGS. 1 through 4, the separator 110 includes an injection portion 112 and an opening portion 114 from the perspective of the second surface S2. The injection portion 112 is adjacent to the first end E1 of the separator 110 and is coupled to the slurry supply device 116 (as shown in Figures 1, 2). In one embodiment, the injection portion 112 can be, for example, a hollow conduit disposed in the separator 110 for connecting the slurry supply device 116 to the opening portion 114 (shown in FIG. 3). The opening portion 114 is disposed between the injection portion 112 and the polishing pad 102. The bottom surface of the opening portion 114 exposes the surface of the polishing pad 102. In an embodiment, the opening portion 114 may be, for example, a strip-shaped opening that is disposed in the separator 110. The strip opening extends from the first end E1 of the separator 110 to the second end E2 of the separator 110 (shown in Figure 4). In one embodiment, the opening portion 114 can be, for example, a hollow cavity for receiving the slurry 200 provided by the slurry supply device 116.
舉例來說，研磨液供應裝置116所提供的研磨液200可藉由注入部112注入開口部114中，並填入開口部114中。接著，從開口部114底部流出的研磨液202可從分離器110的第一表面S1沿著第一方向D1連續分布（或塗佈）在研磨墊102上。因此，相較於習知研磨液的單點注入，本實施例之開口部114可例如是線狀注入或面狀注入，其可提升研磨液塗佈的均勻度，且減少研磨液的使用量，以降低製程成本。詳細的化學機械研磨方法的流程步驟將於後續段落說明，於此便不再詳述。值得注意的是，研磨台100旋轉的離心力使得研磨墊102的圓周的角速度大於圓心的角速度，因此，從第一表面S1延伸的研磨液202可呈扇形，並均勻分布在研磨墊102上。在一實施例中，研磨液202靠近第一端E1的厚度大於靠近第二端E2的厚度。For example, the polishing liquid 200 supplied from the slurry supply device 116 can be injected into the opening portion 114 through the injection portion 112 and filled in the opening portion 114. Next, the polishing liquid 202 flowing out from the bottom of the opening portion 114 may be continuously distributed (or coated) on the polishing pad 102 from the first surface S1 of the separator 110 along the first direction D1. Therefore, the opening portion 114 of the present embodiment can be, for example, a linear injection or a planar injection, which can improve the uniformity of the coating of the polishing liquid and reduce the usage amount of the polishing liquid, compared to the single-point injection of the conventional polishing liquid. To reduce process costs. The process steps of the detailed chemical mechanical polishing method are described in the subsequent paragraphs and will not be described in detail herein. It is to be noted that the centrifugal force of the rotation of the polishing table 100 is such that the angular velocity of the circumference of the polishing pad 102 is greater than the angular velocity of the center of the circle, and therefore, the polishing liquid 202 extending from the first surface S1 may be fan-shaped and uniformly distributed on the polishing pad 102. In one embodiment, the thickness of the slurry 202 adjacent the first end E1 is greater than the thickness of the second end E2.
在一實施例中，分離器110的底面平貼在研磨墊102的頂面上。具體來說，可利用連桿機構將分離器110固定，並在分離器110上方進行適當配重，使得分離器110的底面平貼在研磨墊102的頂面上，以避免因研磨台100旋轉時分離器110與研磨墊102摩擦導致跳動。在一實施例中，分離器110的材料可例如是工程塑膠。在一實施例中，在進行研磨時，分離器110為固定不動。In one embodiment, the bottom surface of the separator 110 is flat against the top surface of the polishing pad 102. Specifically, the separator 110 can be fixed by a link mechanism, and an appropriate weight is disposed above the separator 110 such that the bottom surface of the separator 110 is flatly attached to the top surface of the polishing pad 102 to avoid rotation by the polishing table 100. When the separator 110 rubs against the polishing pad 102, it causes a jump. In an embodiment, the material of the separator 110 can be, for example, an engineering plastic. In one embodiment, the separator 110 is stationary during grinding.
此外，本實施例之化學機械研磨裝置10更包括高壓液體清洗裝置108配置於研磨墊102上，用以輸送高壓液體至研磨墊102上，以去除研磨墊102上的研磨液與雜質。詳細地說，當進行化學機械研磨製程之後，殘留下來的研磨液會固化結晶而留在研磨墊102的表面，造成晶圓的損害。因此，配置於研磨墊102上方的高壓液體清洗裝置108，可噴出的液體來對研磨墊102進行清洗。在一實施例中，高壓液體可例如是水。可視情況需求將高壓液體以高壓的水柱、水霧或水刀的方式，來清除研磨墊102上的研磨液與雜質。In addition, the chemical mechanical polishing apparatus 10 of the present embodiment further includes a high-pressure liquid cleaning device 108 disposed on the polishing pad 102 for conveying high-pressure liquid onto the polishing pad 102 to remove the polishing liquid and impurities on the polishing pad 102. In detail, after the chemical mechanical polishing process, the remaining polishing liquid solidifies and remains on the surface of the polishing pad 102, causing damage to the wafer. Therefore, the high-pressure liquid cleaning device 108 disposed above the polishing pad 102 cleans the polishing pad 102 by the liquid that can be ejected. In an embodiment, the high pressure liquid can be, for example, water. The high pressure liquid may be used as a high pressure water column, water mist or water jet to remove the polishing liquid and impurities on the polishing pad 102 as the case may be.
圖5為本發明之一實施例的一種化學機械研磨方法的流程步驟圖。Figure 5 is a flow chart showing a chemical mechanical polishing method according to an embodiment of the present invention.
在本實施例中，將利用上述化學機械研磨裝置10來進行化學機械研磨方法，其配置關係已於上述段落詳細說明過，於此便不再贅述。In the present embodiment, the chemical mechanical polishing method will be carried out by using the chemical mechanical polishing apparatus 10 described above, and the arrangement relationship thereof will be described in detail in the above paragraphs, and will not be described again.
請同時參考圖1至圖5，先進行步驟S001，將研磨液供應裝置116所提供的研磨液200從注入部112注入開口部114中。此時，研磨液200填入開口部114中的空間。Referring to FIG. 1 to FIG. 5 simultaneously, step S001 is performed first, and the polishing liquid 200 supplied from the slurry supply device 116 is injected into the opening portion 114 from the injection portion 112. At this time, the polishing liquid 200 fills the space in the opening portion 114.
接著，進行步驟S002，旋轉研磨台100，使得研磨台100上的研磨墊102沿著第一方向D1旋轉。由於分離器110為固定不動，因此，從開口部114底部流出的研磨液202亦會隨著研磨墊102沿著第一方向D1旋轉。此時，研磨液202自分離器110的第一表面S1沿著第一方向D1連續分布在研磨墊102上。Next, in step S002, the polishing table 100 is rotated such that the polishing pad 102 on the polishing table 100 rotates in the first direction D1. Since the separator 110 is stationary, the polishing liquid 202 flowing out from the bottom of the opening portion 114 also rotates along the polishing pad 102 in the first direction D1. At this time, the polishing liquid 202 is continuously distributed on the polishing pad 102 from the first surface S1 of the separator 110 along the first direction D1.
然後，進行步驟S003，利用研磨頭104吸附晶圓W，將晶圓W的正面朝下與研磨墊102接觸，以進行研磨。Then, in step S003, the wafer W is adsorbed by the polishing head 104, and the front side of the wafer W is brought into contact with the polishing pad 102 to be polished.
之後，進行步驟S004，上述研磨液202在經過研磨並旋轉一周後，形成經研磨過的部分研磨液204。如圖1、2所示，經研磨過的部分研磨液204被阻擋在分離器110的第二表面S2，因此，經研磨過的部分研磨液204便不會與第一表面S1的未經研磨過的研磨液202混合。如此一來，分離器110便可以有效地分離經研磨過的部分研磨液204與未經研磨過的研磨液202，以減少缺陷並提升研磨效率與品質。此外，經研磨過的部分研磨液204不僅被阻擋在分離器110的第二表面S2，亦可藉由研磨台100旋轉的離心力而被移除。需注意的是，為求圖式簡潔起見，在圖1、2中並未繪示出研磨液202、204之間的研磨液。基本上，在進行化學機械研磨方法的過程中，研磨液會塗佈在整個研磨墊102的表面上。在一實施例中，靠近第一表面S1的研磨液202可視為未經研磨過的研磨液；而靠近第二表面S2的研磨液204可視為經研磨過的研磨液。Thereafter, in step S004, the polishing liquid 202 is ground and rotated for one week to form a polished portion of the polishing liquid 204. As shown in FIGS. 1 and 2, the ground portion of the ground slurry 204 is blocked on the second surface S2 of the separator 110, so that the ground portion of the ground slurry 204 is not unground with the first surface S1. The passed slurry 202 is mixed. In this way, the separator 110 can effectively separate the ground portion of the ground slurry 204 and the unground slurry 202 to reduce defects and improve grinding efficiency and quality. Further, the ground portion of the ground slurry 204 is not only blocked at the second surface S2 of the separator 110, but also removed by the centrifugal force of the rotation of the polishing table 100. It should be noted that the polishing liquid between the polishing liquids 202 and 204 is not shown in FIGS. 1 and 2 for the sake of simplicity of the drawing. Basically, the polishing liquid is applied to the entire surface of the polishing pad 102 during the chemical mechanical polishing method. In one embodiment, the slurry 202 near the first surface S1 can be considered an unground slurry; and the slurry 204 near the second surface S2 can be considered a ground slurry.
然後，進行步驟S005，將新的（即未經研磨過的）研磨液200從注入部112注入開口部114中。如此一來，新的（即未經研磨過的）研磨液202繼續從分離器110的第一表面S1沿著第一方向D1連續分布在研磨墊102上，來進行研磨。Then, in step S005, a new (i.e., unpolished) polishing liquid 200 is injected from the injection portion 112 into the opening portion 114. As a result, the new (i.e., unpolished) slurry 202 continues to be distributed from the first surface S1 of the separator 110 along the first direction D1 on the polishing pad 102 for grinding.
綜上所述，本發明可藉由分離器以分離經研磨過的部分第一研磨液與未經研磨過的第二研磨液，其能有效分離新、舊研磨液，進而減少缺陷並提升研磨效率與品質。另外，本發明之分離器具有注入部以及開口部。由於注入部與研磨液供應裝置連接，因此，上述分離器可用以塗佈研磨液於研磨墊上。而且開口部為條狀開口，相較於習知研磨液的單點注入，本發明亦可提升研磨液塗佈的均勻度，且減少研磨液的使用量，以降低製程成本。In summary, the present invention can separate the ground portion of the first slurry and the unground second slurry by a separator, which can effectively separate the new and old slurry, thereby reducing defects and improving grinding. Efficiency and quality. Further, the separator of the present invention has an injection portion and an opening portion. Since the injection portion is connected to the slurry supply device, the separator can be used to apply the slurry to the polishing pad. Moreover, the opening portion is a strip-shaped opening. Compared with the single-point injection of the conventional polishing liquid, the present invention can also improve the uniformity of the coating of the polishing liquid and reduce the usage amount of the polishing liquid to reduce the process cost.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
10‧‧‧化學機械研磨裝置
100‧‧‧研磨台
102‧‧‧研磨墊
104‧‧‧研磨頭
106‧‧‧調節器
108‧‧‧高壓液體清洗裝置
110‧‧‧分離器
112‧‧‧注入部
114‧‧‧開口部
116‧‧‧研磨液供應裝置
200、202、204‧‧‧研磨液
D1‧‧‧第一方向
D2‧‧‧第二方向
E1‧‧‧第一端
E2‧‧‧第二端
S1‧‧‧第一表面
S2‧‧‧第二表面
S001~S005‧‧‧步驟10‧‧‧Chemical mechanical grinding device
100‧‧‧ polishing table
102‧‧‧ polishing pad
104‧‧‧ polishing head
106‧‧‧Regulator
108‧‧‧High pressure liquid cleaning device
110‧‧‧Separator
112‧‧‧Injection Department
114‧‧‧ openings
116‧‧‧Slurry supply unit
200, 202, 204‧‧‧ polishing fluid
D1‧‧‧ first direction
D2‧‧‧ second direction
E1‧‧‧ first end
E2‧‧‧ second end
S1‧‧‧ first surface
S2‧‧‧ second surface
S001~S005‧‧‧Steps
圖1 為本發明之一實施例的一種化學機械研磨裝置的上視示意圖。 圖2 為圖1 之A-A’線的剖面示意圖。 圖3 為圖1 之分離器的立體透視示意圖。 圖4 為圖3 之第二表面的透視示意圖。 圖5 為本發明之一實施例的一種化學機械研磨方法的流程步驟圖。1 is a top plan view of a chemical mechanical polishing apparatus according to an embodiment of the present invention. Figure 2 is a schematic cross-sectional view taken along line A-A' of Figure 1. Figure 3 is a perspective perspective view of the separator of Figure 1. Figure 4 is a perspective schematic view of the second surface of Figure 3. FIG. 5 is a flow chart showing a chemical mechanical polishing method according to an embodiment of the present invention.
10‧‧‧化學機械研磨裝置 10‧‧‧Chemical mechanical grinding device
102‧‧‧研磨墊 102‧‧‧ polishing pad
104‧‧‧研磨頭 104‧‧‧ polishing head
106‧‧‧調節器 106‧‧‧Regulator
108‧‧‧高壓液體清洗裝置 108‧‧‧High pressure liquid cleaning device
110‧‧‧分離器 110‧‧‧Separator
112‧‧‧注入部 112‧‧‧Injection Department
202、204‧‧‧研磨液 202, 204‧‧‧ polishing fluid
D1‧‧‧第一方向 D1‧‧‧ first direction
D2‧‧‧第二方向 D2‧‧‧ second direction
E1‧‧‧第一端 E1‧‧‧ first end
E2‧‧‧第二端 E2‧‧‧ second end
S1‧‧‧第一表面 S1‧‧‧ first surface
S2‧‧‧第二表面 S2‧‧‧ second surface
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| JP7162465B2 (en) * | 2018-08-06 | 2022-10-28 | 株式会社荏原製作所 | Polishing device and polishing method |
| CN108942638B (en) * | 2018-08-15 | 2020-11-13 | 长江存储科技有限责任公司 | Grinding device |
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| US20040049301A1 (en) * | 2002-09-10 | 2004-03-11 | M Fsi Ltd. | Apparatus and method for preparing and supplying slurry for CMP machine |
| JP2006088292A (en) * | 2004-09-27 | 2006-04-06 | Toshiba Corp | Polishing device, polishing method, and manufacturing method for semiconductor device |
| JP5511600B2 (en) * | 2010-09-09 | 2014-06-04 | 株式会社荏原製作所 | Polishing equipment |
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| JP6030041B2 (en) * | 2013-11-01 | 2016-11-24 | 株式会社荏原製作所 | Polishing apparatus and polishing method |
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