JPH0310769A - Dressing device for polishing cloth - Google Patents
Dressing device for polishing clothInfo
- Publication number
- JPH0310769A JPH0310769A JP1142701A JP14270189A JPH0310769A JP H0310769 A JPH0310769 A JP H0310769A JP 1142701 A JP1142701 A JP 1142701A JP 14270189 A JP14270189 A JP 14270189A JP H0310769 A JPH0310769 A JP H0310769A
- Authority
- JP
- Japan
- Prior art keywords
- polishing cloth
- polishing
- cloth
- pressure water
- high pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 112
- 239000004744 fabric Substances 0.000 title claims abstract description 83
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 abstract description 12
- 239000007795 chemical reaction product Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005086 pumping Methods 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241001300059 Theba Species 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、研磨布により半導体ウェーハ等の研磨を行な
う研磨装置に付設され、前記研磨布に高圧水を噴射して
目詰まりを防止するドレッシング装置に関する。Detailed Description of the Invention "Industrial Application Field" The present invention relates to a dressing that is attached to a polishing apparatus for polishing semiconductor wafers, etc. with a polishing cloth, and that sprays high-pressure water onto the polishing cloth to prevent clogging. Regarding equipment.
「従来の技術」
半導体ウェーハ等の研磨装置においては、ベースプレー
トにフェルト等からなる円形の研磨布を取り付けて回転
させ、この研磨布に微粒子シリカよりなる砥粒を含有す
るアルカリ溶液を供給しつつ、この研磨布にキャリアプ
レートに取り付けた複数枚のウェーハの片面を押し当て
、各ウェーハのメカノケミカルポリッシングにより鏡面
仕上げを行なっている。"Prior Art" In a polishing apparatus for semiconductor wafers, etc., a circular polishing cloth made of felt or the like is attached to a base plate and rotated, and an alkaline solution containing abrasive grains made of fine silica is supplied to the polishing cloth. One side of a plurality of wafers attached to a carrier plate is pressed against this polishing cloth, and each wafer is mechanochemically polished to a mirror finish.
ところが、この種の研磨装置では、研磨回数を重ねるに
つれ研磨布の中心側でウェーハの研磨速度が低下する傾
向があり、外周側での研磨量が相対的に増して、ウェー
ハの鏡面に傾き(テーバ)が生じる欠点があった。However, with this type of polishing equipment, as the number of polishing cycles increases, the polishing speed of the wafer tends to decrease on the center side of the polishing cloth, and the amount of polishing on the outer peripheral side increases relatively, causing the wafer to become mirror-like ( It had the disadvantage of causing problems (Theba).
この原因は、研磨布の目詰まりによるしのと考えられる
。すなわち、研磨布の中心側では外周側に比して周速度
が遅いため、研磨で生じた反応生成物が排出されにくく
、研磨布の内部に滞留する。This is thought to be caused by clogging of the polishing cloth. That is, since the circumferential speed is lower on the center side of the polishing cloth than on the outer peripheral side, reaction products generated during polishing are difficult to be discharged and remain inside the polishing cloth.
このため、ウェーハによる間欠的な圧迫および研磨布の
厚さ復元によって起きる研磨布のボンピング作用が低下
し、このボンピング作用によるスラリーの循環効果が低
下して、研磨布の中心側の砥粒の分布量が相対的に減少
し、研磨速度が低下するのである。Therefore, the pumping effect of the polishing cloth caused by intermittent compression by the wafer and restoration of the thickness of the polishing cloth is reduced, and the circulation effect of the slurry due to this pumping action is reduced, resulting in the distribution of abrasive grains on the center side of the polishing cloth. The amount decreases relatively, and the polishing rate decreases.
そこで従来では、研磨布の中心側の目詰まりがある程度
に達したら、研磨作業を停止して純水をかけながらダイ
ヤモンドやセラミックス砥石により研磨布をこするなど
の方法により、ドレッシングを行なっていた。Conventionally, when the center of the polishing cloth becomes clogged to a certain extent, dressing is carried out by stopping the polishing operation and rubbing the polishing cloth with a diamond or ceramic grindstone while pouring pure water on it.
「発明が解決しようとする課題」
しかし、上記のようなドレッシング方法では、研磨布の
表層に付着した反応生成物、研磨効果の無くなった砥粒
、ドレッシングにより削り取られた研磨布の破片、さら
には砥石から離脱した粒子などの除去には効果があるが
、研磨布の深層に滞留したこれらの粒子の除去が完全で
なく、ドレッシング後も前記ボンピング作用が十分には
回復しない場合もあり、ウェーハ鏡面の傾斜を完全に解
消するには至らず、またウェーハにスクラッチ傷か発生
することがあった。したがって、鏡面の傾きを規格以下
に抑えるには繁雑に研磨布を交換しなければならず、研
磨布の寿命が短く、その分コストがかかる欠点があった
。``Problems to be Solved by the Invention'' However, in the dressing method described above, reaction products adhering to the surface layer of the polishing cloth, abrasive grains that have lost their polishing effect, fragments of the polishing cloth scraped off by dressing, and even Although it is effective in removing particles that have separated from the grinding wheel, the removal of these particles that have accumulated in the deep layer of the polishing cloth is not complete, and the above-mentioned bombing effect may not be fully recovered even after dressing, resulting in a wafer mirror surface. It was not possible to completely eliminate the inclination of the wafer, and scratches sometimes occurred on the wafer. Therefore, in order to keep the inclination of the mirror surface below the standard, it is necessary to replace the polishing cloth in a complicated manner, which has the disadvantage that the life of the polishing cloth is short and the cost increases accordingly.
さらに、砥石によるドレッシングは研磨布の消耗が激し
く、手間がかかって効率が悪く、自動化が困難で、作業
員の負担も大きいという問題ら有していた。Furthermore, dressing with a grindstone has the problem that the polishing cloth is rapidly consumed, it is time-consuming and inefficient, it is difficult to automate, and it places a heavy burden on the workers.
「課題を解決す−るための手段」
本発明は上記課題を解決するためになされたもので、研
磨布の研磨面に向けて設けられた噴射ノズルと、この噴
射ノズルを研磨布の外方の退避位置まで移動させうるノ
ズル移動機構と、前記噴射ノズルに30〜100 kg
/ cm”の高圧純水を供給する給水機構とを具備した
ことを特徴としている。"Means for Solving the Problems" The present invention has been made to solve the above problems, and includes a jet nozzle provided toward the polishing surface of the polishing cloth, and a jet nozzle directed outward from the polishing cloth. a nozzle moving mechanism capable of moving the injection nozzle to a retracted position;
/cm'' of high-pressure pure water.
「作 用」
この研磨布のドレッシング装置では、研磨装置により研
磨布を回転しつつ、給水機構を作動させ、ノズル移動機
構により噴射ノズルを退避位置から研磨布上に移動して
、研磨布に向けて高圧水を噴射することにより、研磨布
の内部にまで高圧水を流入させ、その衝撃により研磨布
の内部に滞留した反応生成物等を叩き出して除去する。"Function" In this abrasive cloth dressing device, the abrasive cloth is rotated by the abrasive device, the water supply mechanism is activated, and the nozzle moving mechanism moves the injection nozzle from the retracted position onto the abrasive cloth to direct it toward the abrasive cloth. By injecting high-pressure water, the high-pressure water flows into the inside of the polishing cloth, and the reaction products and the like that have stayed inside the polishing cloth are knocked out and removed by the impact.
したがって、表層のみならず深層の粒子に対しても高い
除去効果を得ることができ、研磨布の目詰まりをほぼ完
全に解消して、研磨布本来の良好なボンピング作用を回
復させ、研磨精度を高めて研磨布の寿命を延長できる。Therefore, it is possible to obtain a high removal effect not only for particles in the surface layer but also in the deep layers, almost completely eliminating clogging of the polishing cloth, restoring the good pumping effect inherent to the polishing cloth, and improving polishing accuracy. You can extend the life of the polishing cloth by increasing it.
また、水流でドレッシングするから研磨布に損傷を与え
るおそれがないうえ、ドレッシングの効率が良く、自動
化が容易で作業員の負担も少ないという利点を有する。Furthermore, since dressing is performed with a water stream, there is no risk of damaging the polishing cloth, and the dressing has the advantage of being highly efficient, easy to automate, and requiring less burden on the operator.
「実施例」
第1図および第2図は、本発明に係わる研磨布のドレッ
シング装置の一実施例を付設した研磨装置を示す平面図
および正断面図である。Embodiment FIGS. 1 and 2 are a plan view and a front sectional view showing a polishing apparatus equipped with an embodiment of a polishing cloth dressing device according to the present invention.
まず、研磨装置の概略から説明すると、図中符号1は円
板状の研磨盤で、この研磨盤lは下方に配置された駆動
部2により回転される。研磨盤lの上面にはフェルト等
からなる研磨布3が貼られ、研磨盤1の下方には研磨盤
lを包囲する受皿4が設けられている。First, to explain the outline of the polishing apparatus, reference numeral 1 in the figure is a disc-shaped polishing disc, and this polishing disc 1 is rotated by a drive unit 2 disposed below. A polishing cloth 3 made of felt or the like is pasted on the upper surface of the polishing disc 1, and a saucer 4 surrounding the polishing disc 1 is provided below the polishing disc 1.
そして研磨盤lの上面に円板状のキャリアプレート(図
示路)を配置し、このキャリアプレートに形成された4
つの円形開口部にウェーハWをはめ込み、キャリアプレ
ートと研磨盤とを逆回転することにより、ウェーハWの
鏡面研磨を行なう構成となっている。Then, a disc-shaped carrier plate (the path shown in the figure) is placed on the top surface of the polishing plate l, and the 4
The configuration is such that the wafer W is mirror-polished by fitting the wafer W into one of the circular openings and rotating the carrier plate and the polishing disk in reverse.
次に、ドレッシング装置の構成を説明する。研磨盤lの
側方には、円筒形の軸受5が受皿4を垂直に貫通して固
定され、この軸受5を通して中空のアーム軸6が回動自
在に取り付けられるとともに、このアーム軸6の上端に
は、研磨盤lの中心に達する長さの中空アーム7が水平
に固定されている。Next, the configuration of the dressing device will be explained. A cylindrical bearing 5 is fixed to the side of the polishing plate l by vertically penetrating the tray 4, and a hollow arm shaft 6 is rotatably attached through this bearing 5, and the upper end of this arm shaft 6 A hollow arm 7 having a length reaching the center of the polishing plate l is horizontally fixed to the polishing plate l.
この中空アーム7の下面には、先端部と中央部と基端部
のそれぞれに、計3つの噴射ノズル8が下向きに形成さ
れ、中空アーム7を研磨布3の中心に向けた状態で、各
ノズル8はそれぞれ研磨布の中心部、半径中央部、外周
部と対向する。On the lower surface of this hollow arm 7, a total of three injection nozzles 8 are formed downward at the tip, center, and base end, and with the hollow arm 7 facing the center of the polishing cloth 3, The nozzles 8 face the center, radial center, and outer periphery of the polishing cloth, respectively.
各噴射ノズル8の開口部と研磨布3との間隙は10〜3
0肩ヌであることが望ましく、loRi未満ではノズル
8からの水流が集中しすぎてドレッシングむらが生じ、
30umより大きいと水流の勢いが低下してドレッシン
グ効果が不足する。The gap between the opening of each injection nozzle 8 and the polishing cloth 3 is 10 to 3
It is desirable that it is 0 shoulders. If it is less than loRi, the water flow from the nozzle 8 will be too concentrated and uneven dressing will occur.
If it is larger than 30 um, the force of the water flow will be reduced and the dressing effect will be insufficient.
さらに中空アーム7の下面には、樋状の飛散防止カバー
9が各噴射ノズル8を覆うように固定され、その下端と
研磨布3との間には中空アーム7の回動を阻害しない程
度の僅かな間隔が空けられている。Further, a gutter-shaped scattering prevention cover 9 is fixed to the lower surface of the hollow arm 7 so as to cover each injection nozzle 8, and there is a gap between the lower end of the cover 9 and the polishing cloth 3 to the extent that the rotation of the hollow arm 7 is not inhibited. There is a slight gap between them.
一方、アーム軸6の下端部にはレバーIOが水平に固定
され、このレバーIOの遊端部には、受皿4の下面と平
行に固定されたエアシリンダ(アーム移動機構の要部)
IIのロッドが連結されている。そして、エアシリンダ
11を作動させると、中空アームは研磨布3から外れた
退避位置ptから、研磨布4の中心に向かう範囲で回動
するようになっている。On the other hand, a lever IO is fixed horizontally to the lower end of the arm shaft 6, and an air cylinder (main part of the arm moving mechanism) is fixed to the free end of the lever IO in parallel with the lower surface of the saucer 4.
II rod is connected. When the air cylinder 11 is operated, the hollow arm rotates in a range from a retracted position pt away from the polishing cloth 3 toward the center of the polishing cloth 4.
さらにアーム軸6の下端には、ユニバーサルジヨイント
12を介して、アーム軸6が回動してもねじれないよう
に給水ホース13が接続され、この給水ホース13は図
示しない給水機構に接続され、この給水機構を作動する
と、各ノズル8から30〜l OOkg/ cm”の圧
力で水が噴射されるようになっている。水圧が30 k
g7 cm”未満では研磨布3の内部まで十分な粒子排
出効果が得られず、逆にI 00 kg/ crx2よ
り大では研磨布3が損傷するおそれがある。Further, a water supply hose 13 is connected to the lower end of the arm shaft 6 via a universal joint 12 so as not to be twisted even when the arm shaft 6 rotates, and this water supply hose 13 is connected to a water supply mechanism (not shown). When this water supply mechanism is activated, water is injected from each nozzle 8 at a pressure of 30 to 100 kg/cm.
If it is less than I00 kg/crx2, a sufficient effect of ejecting particles to the inside of the polishing cloth 3 cannot be obtained.On the other hand, if it is more than I00 kg/crx2, the polishing cloth 3 may be damaged.
」二記構成からなるドレッシング装置を使用するには、
まずキャリアプレートを研磨布3上から外した状態で研
磨布3を回転させ、給水機構を作動させて各ノズル8か
ら高圧水を噴射し、さらにエアシリンダ11を作動させ
て、退避位置Pにある中空アーム7を研磨布3の中心に
至るまで十分に低速で回動させる(あるいは往復動させ
てもよい)。” To use the dressing device consisting of the following two configurations,
First, remove the carrier plate from above the polishing cloth 3, rotate the polishing cloth 3, activate the water supply mechanism to inject high-pressure water from each nozzle 8, and then activate the air cylinder 11 so that the polishing cloth 3 is at the retracted position P. The hollow arm 7 is rotated (or may be reciprocated) at a sufficiently low speed until it reaches the center of the polishing cloth 3.
これにより、研磨布3の回転につれて研磨布3の全面に
亙って均一に高圧水を吹きかけることができ、高圧の水
流が研磨布3の内部にまで流入し、内部に滞留した粒子
等を叩き出して除去するので、粒子の除去効果が極めて
高いうえ、研磨布3に与える物理的損傷が少ない。この
ため、研磨布3本来の良好なボンピング作用を回復させ
、研磨精度を高めて研磨布3の寿命を延長できる。As a result, high-pressure water can be sprayed uniformly over the entire surface of the polishing cloth 3 as the polishing cloth 3 rotates, and the high-pressure water flow flows into the inside of the polishing cloth 3 and hits particles etc. that have stayed inside. Since the polishing cloth 3 is removed by removing the particles, the effect of removing the particles is extremely high, and the physical damage caused to the polishing cloth 3 is small. Therefore, the original good pumping effect of the polishing cloth 3 can be restored, the polishing accuracy can be improved, and the life of the polishing cloth 3 can be extended.
また、水流でドレッシングするから研磨布3に損傷を与
えるおそれがないうえ、ドレッシングに要する時間を大
幅に短縮でき、自動化により作業員の負担も少ないとい
う利点を有する。Furthermore, since dressing is performed with a water stream, there is no risk of damaging the polishing cloth 3, and the time required for dressing can be significantly shortened, and automation has the advantage of reducing the burden on workers.
また、中空アーム7を回動させることによって噴射ノズ
ル8の移動を行なうので、構成が単純で済み、設備コス
トが安いという利点も有する。Further, since the injection nozzle 8 is moved by rotating the hollow arm 7, the structure is simple and the equipment cost is low.
この装置により、125mm径シリコンウェーハの研磨
において、傾きがT T V (Total Th1c
k−ness Variation)3μm以下の製品
を研磨布寿命を従来の平均60ランから150ラン迄延
ばすことができた。With this device, when polishing a 125 mm diameter silicon wafer, the slope is T T V (Total Th1c
k-ness Variation) The life of the polishing cloth for products with a diameter of 3 μm or less was extended from the conventional average of 60 runs to 150 runs.
なお、本発明は上記実施例のみに限らず、各部の構成を
必要に応じて適宜変更してよい。たとえば、中空アーム
7を研磨布3に沿って平行移動させる構成として、もよ
いし、噴射ノズル8の個数を変更してもよい。また、給
水機構を変更してノズル8からパルス状に高圧水を噴射
させるようにし、その波動により粒子除去効果を高めて
もよい。Note that the present invention is not limited to the above embodiments, and the configuration of each part may be changed as necessary. For example, the hollow arm 7 may be moved in parallel along the polishing cloth 3, or the number of injection nozzles 8 may be changed. Alternatively, the water supply mechanism may be changed so that high-pressure water is jetted from the nozzle 8 in a pulsed manner, and the particle removal effect may be enhanced by the wave motion.
さらに、本発明は上記のようなウェーハ研磨装置のみに
限らず、その他の目的に使用される研磨装置、例えばエ
ンドレスベルト式の研磨布を用いた装置にも適用可能で
ある。Furthermore, the present invention is applicable not only to the above-mentioned wafer polishing apparatus, but also to polishing apparatuses used for other purposes, such as apparatuses using an endless belt type polishing cloth.
「発明の効果」
以上説明したように、本発明に係わる研磨布のドレッシ
ング装置では、研磨装置により研磨布を回転しつつ給水
機構を作動させ、ノズル移動機構により噴射ノズルを退
避位置から研磨布上に移動して、研磨布に向けて高圧水
を噴射することにより、研磨布の内部にまで高圧水を流
入させ、その衝撃により研磨布の内部に滞留した粒子等
を叩き出して除去する。したがって、表層のみならず深
層の粒子に対しても高い除去効果を得ることができ、研
磨布の目詰まりをほぼ完全に解消して、研磨布本来の良
好なボンピング作用を回復させ、研磨精度を高めて研磨
布の寿命を延長できる。"Effects of the Invention" As explained above, in the polishing cloth dressing device according to the present invention, the water supply mechanism is operated while the polishing cloth is rotated by the polishing device, and the jet nozzle is moved from the retracted position onto the polishing cloth by the nozzle moving mechanism. The high-pressure water is flowed into the interior of the polishing cloth by moving to the polishing cloth, and the impact thereof knocks out and removes particles and the like that have stayed inside the polishing cloth. Therefore, it is possible to obtain a high removal effect not only for particles in the surface layer but also in the deep layers, almost completely eliminating clogging of the polishing cloth, restoring the good pumping effect inherent to the polishing cloth, and improving polishing accuracy. You can extend the life of the polishing cloth by increasing it.
また、水流でドレッシングするから研磨布に損傷を与え
るおそれがないうえ、ドレッシングの効率が良く、自動
化が容易で作業員の負担も少ないという利点を有する。Furthermore, since dressing is performed with a water stream, there is no risk of damaging the polishing cloth, and the dressing has the advantage of being highly efficient, easy to automate, and requiring less burden on the operator.
第1図および第2図は本発明に係わる研磨布のドレッシ
ング装置の一実施例を示す平面図および正断面図である
。
1・・・研磨盤、3・・・研磨布、4・・・受皿、5・
・・軸受、6・・・アーム軸、7・・・中空アーム、8
・・・噴射ノズル、9・・・飛散防止カバー IO・・
・レバー 11・・・エアンリンダ(アーム移動機構の
要部)、P・・・退避位置。1 and 2 are a plan view and a front sectional view showing an embodiment of a polishing cloth dressing device according to the present invention. 1... Polishing disk, 3... Polishing cloth, 4... saucer, 5...
...Bearing, 6...Arm shaft, 7...Hollow arm, 8
...Injection nozzle, 9...Scatter prevention cover IO...
- Lever 11...Air cylinder (main part of arm movement mechanism), P...Retracted position.
Claims (1)
噴射ノズルを研磨布の外方の退避位置まで移動させうる
ノズル移動機構と、前記噴射ノズルに30〜100kg
/cm^2の高圧水を供給する給水機構とを具備したこ
とを特徴とする研磨布のドレッシング装置。An injection nozzle provided toward the polishing surface of the polishing cloth, a nozzle moving mechanism capable of moving the injection nozzle to a retracted position outside the polishing cloth, and a 30 to 100 kg load attached to the injection nozzle.
A polishing cloth dressing device characterized by comprising a water supply mechanism that supplies high pressure water of /cm^2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1142701A JP2628915B2 (en) | 1989-06-05 | 1989-06-05 | Dressing equipment for polishing cloth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1142701A JP2628915B2 (en) | 1989-06-05 | 1989-06-05 | Dressing equipment for polishing cloth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0310769A true JPH0310769A (en) | 1991-01-18 |
JP2628915B2 JP2628915B2 (en) | 1997-07-09 |
Family
ID=15321549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1142701A Expired - Lifetime JP2628915B2 (en) | 1989-06-05 | 1989-06-05 | Dressing equipment for polishing cloth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2628915B2 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578529A (en) * | 1995-06-02 | 1996-11-26 | Motorola Inc. | Method for using rinse spray bar in chemical mechanical polishing |
JPH09131659A (en) * | 1995-11-07 | 1997-05-20 | Nec Corp | Method and mechanism for adjusting surface of grinding cloth |
US5716264A (en) * | 1995-07-18 | 1998-02-10 | Ebara Corporation | Polishing apparatus |
WO1998006540A1 (en) * | 1996-08-13 | 1998-02-19 | Lsi Logic Corporation | Apparatus and method for polishing semiconductor devices |
EP0887153A2 (en) * | 1997-06-24 | 1998-12-30 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
US6053801A (en) * | 1999-05-10 | 2000-04-25 | Applied Materials, Inc. | Substrate polishing with reduced contamination |
US6149508A (en) * | 1997-11-03 | 2000-11-21 | Motorola, Inc. | Chemical mechanical planarization system |
US6220941B1 (en) | 1998-10-01 | 2001-04-24 | Applied Materials, Inc. | Method of post CMP defect stability improvement |
EP1103345A2 (en) * | 1999-11-25 | 2001-05-30 | Fujikoshi Machinery Corporation | Cloth cleaning device and polishing machine |
US6319098B1 (en) | 1998-11-13 | 2001-11-20 | Applied Materials, Inc. | Method of post CMP defect stability improvement |
US6645053B1 (en) | 1998-03-26 | 2003-11-11 | Ebara Corporation | Polishing apparatus |
US6669538B2 (en) | 2000-02-24 | 2003-12-30 | Applied Materials Inc | Pad cleaning for a CMP system |
JP2008068389A (en) * | 2006-09-15 | 2008-03-27 | Tokyo Seimitsu Co Ltd | Polishing method and polishing device |
JP2014087908A (en) * | 2012-10-31 | 2014-05-15 | Ebara Corp | Polishing device |
TWI577497B (en) * | 2012-10-31 | 2017-04-11 | Ebara Corp | Grinding device |
CN107030607A (en) * | 2016-03-21 | 2017-08-11 | 浙江森永光电设备有限公司 | The restorative procedure of polished leather in polishing machine |
-
1989
- 1989-06-05 JP JP1142701A patent/JP2628915B2/en not_active Expired - Lifetime
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5578529A (en) * | 1995-06-02 | 1996-11-26 | Motorola Inc. | Method for using rinse spray bar in chemical mechanical polishing |
US5716264A (en) * | 1995-07-18 | 1998-02-10 | Ebara Corporation | Polishing apparatus |
JPH09131659A (en) * | 1995-11-07 | 1997-05-20 | Nec Corp | Method and mechanism for adjusting surface of grinding cloth |
US6168502B1 (en) | 1996-08-13 | 2001-01-02 | Lsi Logic Corporation | Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus |
US5868608A (en) * | 1996-08-13 | 1999-02-09 | Lsi Logic Corporation | Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus |
WO1998006540A1 (en) * | 1996-08-13 | 1998-02-19 | Lsi Logic Corporation | Apparatus and method for polishing semiconductor devices |
US6280299B1 (en) | 1997-06-24 | 2001-08-28 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm |
EP0887153A3 (en) * | 1997-06-24 | 2000-01-05 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
EP0887153A2 (en) * | 1997-06-24 | 1998-12-30 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
US6139406A (en) * | 1997-06-24 | 2000-10-31 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
US6149508A (en) * | 1997-11-03 | 2000-11-21 | Motorola, Inc. | Chemical mechanical planarization system |
US6645053B1 (en) | 1998-03-26 | 2003-11-11 | Ebara Corporation | Polishing apparatus |
US6220941B1 (en) | 1998-10-01 | 2001-04-24 | Applied Materials, Inc. | Method of post CMP defect stability improvement |
US6319098B1 (en) | 1998-11-13 | 2001-11-20 | Applied Materials, Inc. | Method of post CMP defect stability improvement |
US6053801A (en) * | 1999-05-10 | 2000-04-25 | Applied Materials, Inc. | Substrate polishing with reduced contamination |
EP1103345A2 (en) * | 1999-11-25 | 2001-05-30 | Fujikoshi Machinery Corporation | Cloth cleaning device and polishing machine |
EP1103345A3 (en) * | 1999-11-25 | 2003-09-24 | Fujikoshi Machinery Corporation | Cloth cleaning device and polishing machine |
US6669538B2 (en) | 2000-02-24 | 2003-12-30 | Applied Materials Inc | Pad cleaning for a CMP system |
JP2008068389A (en) * | 2006-09-15 | 2008-03-27 | Tokyo Seimitsu Co Ltd | Polishing method and polishing device |
JP2014087908A (en) * | 2012-10-31 | 2014-05-15 | Ebara Corp | Polishing device |
TWI577497B (en) * | 2012-10-31 | 2017-04-11 | Ebara Corp | Grinding device |
CN107030607A (en) * | 2016-03-21 | 2017-08-11 | 浙江森永光电设备有限公司 | The restorative procedure of polished leather in polishing machine |
Also Published As
Publication number | Publication date |
---|---|
JP2628915B2 (en) | 1997-07-09 |
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