TW201641666A - 螢光粉、其製備方法及包含其發光裝置與背光模組 - Google Patents

螢光粉、其製備方法及包含其發光裝置與背光模組 Download PDF

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TW201641666A
TW201641666A TW104129891A TW104129891A TW201641666A TW 201641666 A TW201641666 A TW 201641666A TW 104129891 A TW104129891 A TW 104129891A TW 104129891 A TW104129891 A TW 104129891A TW 201641666 A TW201641666 A TW 201641666A
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phosphor powder
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林群哲
魏靈靈
焦桓
劉如熹
陳靜儀
李育群
蔡宗良
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隆達電子股份有限公司
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Abstract

本發明提供一種螢光粉,具有下列化學式:K2[Ge1-xF6]:Mnx4+,其中0<x<0.2,其中螢光粉具有六方晶相之P63mc空間群。本發明亦提供上述螢光粉的製備方法及包含其發光裝置與背光模組。本發明之螢光粉可應用於藍光發光二極體使其產生紅光螢光,也可於藍光發光二極體中搭配YAG黃光螢光粉(Y3Al5O12:Ce;釔鋁石榴石)及/或綠光螢光粉使其產生白光,以增加演色性。

Description

螢光粉、其製備方法及包含其發光裝置與背光模組
本發明係有關於一種螢光粉、其製備方法及包含其發光裝置與背光模組,特別係有關於一種可提高演色性的螢光粉、其製備方法及包含其之發光裝置與背光模組。
近年來,各國節約能源與環境保護概念成長,作為新世代照明來源,發光二極體(Light-emitting Diodes;LEDs)可解決傳統白熾燈與日光燈所面臨難以克服之問題,同時兼具省電與環保概念,故促使新能源之開發與提高能源效率之議題受大眾重視。其中,彩色發光二極體已普遍用於色彩照明、顯示器、娛樂產品等,其中以電子顯示器產業為發展最迅速之領域,相信未來在光電元件上的應用將會扮演重要角色。
目前全球LED的發展以RGB高演色性白光發光二極體(White Light-emitting Diodes;WLEDs)為主要發展方向,白光發光二極體具有體積小、熱輻射小、壽命長且耗電量低等優點,更顯現白光發光二極體在新世代照明領域中的發展價值。
以YAG螢光粉(Y3Al5O12:Ce;釔鋁石榴石)搭配藍光LED晶片是目前業界最常用以製造白光LED的方式之一,然 而,為彌補YAG螢光粉(Y3Al5O12:Ce;釔鋁石榴石)所欠缺的紅色光譜,添加發紅光的螢光粉之白光LED製程已成為新課題,目前已有許多紅光螢光粉的合成與應用資訊,例如:已知A2[MF6]:Mn4+(其中A為Li,Na,K,Rb,Cs,NH4,M為Ge、Si、Sn、Ti與Zr)氟化物可作為LED之紅光螢光粉材料。
由上可知,可用於提高白色LED演色性的紅光螢光粉及其製備方法,為當前LED發展的重要目標之一。
根據一實施例,本發明提供一種螢光粉,具有下列化學式:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,其中螢光粉具有六方晶相之P63mc空間群。
根據另一實施例,本發明提供一種螢光粉的製備方法,包括:(a)提供一初始螢光粉,其化學式為:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,其中初始螢光粉具有六方晶相之P3m1空間群;(b)實施一熱處理,使得初始螢光粉相變為具有六方晶相之P63mc空間群的一螢光粉。
根據另一實施例,本發明提供一種發光裝置,包括:一激發光源;一發光材料,配置於激發光源上,其中發光材料包括:一螢光粉,具有下列化學式:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,其中螢光粉具有六方晶相之P63mc空間群。
又根據另一實施例,本發明提供一種背光模組,包括至少一如前述之發光裝置。
本發明之螢光粉可應用於藍光發光二極體使其產生紅光螢光,也可於藍光發光二極體中搭配YAG黃光螢光粉 (Y3Al5O12:Ce;釔鋁石榴石)及/或綠光螢光粉使其產生白光,以增加演色性。
為讓本發明之上述和其他目的、特徵與優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下:
100‧‧‧發光裝置
102‧‧‧激發光源
104‧‧‧發光材料
106‧‧‧導線架
108‧‧‧透明樹脂
110‧‧‧封裝材
200‧‧‧發光裝置
202‧‧‧激發光源
204‧‧‧發光材料
206‧‧‧透射光學元件
第1A、1B圖為根據本發明一些實施例顯示發光裝置之剖面示意圖;第2A圖為根據本發明一實施例所製備之K2Ge0.95F6:Mn0.05 4+螢光粉於不同加熱溫度下之放射光譜圖譜;第2B圖為根據本發明一實施例所製備之K2Ge0.95F6:Mn0.05 4+螢光粉於冷卻溫度(300~25℃)下之放射光譜圖譜;第3圖為根據本發明一實施例所製備之K2Ge0.95F6:Mn0.05 4+螢光粉於不同加熱溫度下之X光粉末繞射圖譜;第4圖為根據本發明一實施例所製備之K2Ge0.95F6:Mn0.05 4+螢光粉於不同加熱溫度下之晶體結構示意圖;第5圖為根據本發明一實施例所製備之K2Ge0.95F6:Mn0.05 4+螢光粉於加熱前後之拉曼光譜圖;第6圖為根據本發明一實施例所製備之K2Ge0.95F6:Mn0.05 4+螢光粉於加熱前後與藍光LED晶片(發光波長介於400~500nm)搭配YAG黃光螢光粉產生之白光光譜圖。
本發明提供一種能夠提高演色性的螢光粉及其製 備方法。以熱處理的方式使K2[Ge1-xF6]:Mnx 4+螢光粉的結構從六方晶相P3m1空間群相變成六方晶相之P63mc空間群,進而產生零聲子線(zero phonon line;ZPL),所形成之螢光粉可應用於藍光發光二極體使其產生紅光螢光,或可應用於白光發光二極體以增加其演色性。
在一實施例中,本發明提供一種螢光粉,其具有 下列化學式:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,此螢光粉具有六方晶相之P63mc空間群。在本發明一實施例中,螢光粉的化學式可為K2Ge0.95F6:Mn0.05 4+。此螢光粉經由波長介於320~500nm的光激發後,可放射出波長介於600~650nm的紅光,並且在波段620~625nm具有一零聲子線(zero phonon line;ZPL)。
值得注意的是,上述可激發本發明提供之紅光螢 光粉之光波長範圍避開黃光的波段(約570~590nm),因此以含有發光二極體的發光裝置為例,黃光螢光粉被發光二極體(例如:藍光發光二極體)所激發出之黃光被本發明的紅光螢光粉吸收的機率很低,故可避免黃光損失並同時由本發明之螢光粉提供紅光,進而提升發光裝置的演色性。此外,應可注意到的是,上述可激發本發明提供之紅光螢光粉之光波長範圍也避開了綠光的波段(約495~570nm),因此綠光螢光粉被發光二極體(例如:藍光發光二極體)所激發出之綠光被本發明的紅光螢光粉吸收的機率很低,故也可避免綠光損失並同時由本發明之螢光粉提供紅光,進而達到提升發光裝置演色性的目的。因此,在波長介於320~500nm的範圍中,只要滿足上述 條件,均可作為本發明提供之螢光粉之激發光。
在另一實施例中,本發明也提供上述螢光粉的製 備方法。首先,提供一初始螢光粉,其化學式為:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,此初始螢光粉具有六方晶相之P3m1空間群。在本發明一實施例中,此初始螢光粉的化學式可為K2Ge0.95F6:Mn0.05 4+。接著,對初始螢光粉實施一熱處理,此熱處理可在250℃~450℃下,例如:300℃~400℃、400℃~425℃、或425℃~450℃,持續約10~30分鐘,例如:20分鐘,使得上述具有六方晶相P3m1空間群之K2[Ge1-xF6]:Mnx 4+初始螢光粉相變成具有六方晶相之P63mc空間群之K2[Ge1-xF6]:Mnx 4+螢光粉,進而產生零聲子線(zero phonon line;ZPL)於波段620~625nm。
上述之初始螢光粉K2[Ge1-xF6]:Mnx 4+可經由例 如:兩階段化學共沉澱法(two-step chemical co-precipitation)、或其他合適的製程形成。
在另一實施例中,本發明提供一種發光裝置,包 括:一激發光源,以及一發光材料,配置於激發光源上。上述激發光源可包括一發光二極體(Light-emitting Diode;LED),其發光波長介於320~500nm,例如:藍光發光二極體,其發光波長介於400~500nm,較佳係介於440~480nm。
於一實施例中,發光材料可包括:一螢光粉,其 具有下列化學式:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,此螢光粉具有六方晶相之P63mc空間群。此螢光粉經由波長介於320~500nm的光激發後,可放射出波長介於600~650nm的紅 光,且於波段620~625nm具有一零聲子線(zero phonon line;ZPL)。
於一實施例中,本發明之K2[Ge1-xF6]:Mnx 4+螢光粉 可與其他螢光粉混合。例如,發光材料可更包括一放射黃光之螢光粉(例如:YAG黃光螢光粉、矽酸鹽類黃光螢光粉),及/或一放射綠光之螢光粉(例如:β-SiAlON綠光螢光粉)。此放射黃光之螢光粉及/或放射綠光之螢光粉可與本發明提供之紅光螢光粉混合,經由藍光激發後放射出白光。於上述混合螢光粉中,放射黃光、綠光、及紅光的螢光粉之比例並無限制,任兩者之間的比例可介於1:99~99:1的範圍內,例如可為1:1:1,可依實際需求及螢光粉的性質加以調整。上述作為激發光之藍光波長可介於400~500nm,較佳係介於440~480nm。值得注意的是,上述可激發本發明提供之紅光螢光粉的光波長範圍避開了黃光的波段(約570~590nm)和綠光的波段(約495~570nm),因此在具有可放射黃光及/或綠光之螢光材料的發光裝置像是發光二極體(如藍光發光二極體)中,可避免黃光及/或綠光的損失,並同時由本發明提供之螢光粉提供紅光,進而達到提升發光裝置演色性的目的。
第1A圖為根據本發明一實施例顯示一發光裝置 100之剖面示意圖。發光裝置100包括:一激發光源102,以及一發光材料104,配置於激發光源102上。在此實施例中,激發光源102為一藍光發光二極體,其配置於一導線架106上。混合有發光材料104的透明樹脂108包覆著激發光源102。封裝材110用以封裝激發光源102、導線架106、和透明樹脂108。應理解 的是,上述發光裝置的配置方式及示意圖僅為本發明眾多實施例之一,本發明並不限於此,本技術領域具有通常知識者可依據本發明之教示並參酌現有技術加以修改或潤飾。
第1B圖為根據本發明另一實施例顯示一發光裝置 200之剖面示意圖。發光裝置200包括:一激發光源202,以及一發光材料204,配置於激發光源202上。在此實施例中,一透射光學元件206配置於發光材料204上,其具有光取出性質。透射光學元件206可為一或多層聚合物層、矽層、或樹脂層。
又在一實施例中,本發明提供一種背光模組,其 包括至少一前述之發光裝置,有關發光裝置的詳細內容與前述類似,故不再此贅述。背光模組可應用於顯示器(例如液晶顯示器),作為顯示器的直下式背光模組或側光式背光模組。
例如,背光模組包括發白光的發光裝置。發光裝 置包括一發藍光或UV光或近UV光的激發光源、發綠光的螢光粉與本發明之發紅光的K2[Ge1-xF6]:Mnx 4+螢光粉,其中激發光源的發光波長為320~500nm。
以下提供各實施例說明本發明螢光粉之製備方 法、結構、其特性:
實施例1:螢光粉K 2 Ge 0.95 F 6 :Mn 0.05 4+ 的製備
將0.2000g的六氟錳二鉀(K2MnF6)溶於1.3911g/7.5mL的二氧化鍺/氫氟酸(GeO2/HF)溶液中,接著逐滴加入KF/HF溶液(2.3250g/7.5mL),產生黃色沉澱物,之後過濾反應生成之沉澱物,分三次加入20mL的乙醇,並放置於50℃ 的烘箱中進行乾燥,即可得到螢光粉K2Ge0.95F6:Mn0.05 4+
實施例2:量測螢光粉K 2 Ge 0.95 F 6 :Mn 0.05 4+ 之放射光譜圖譜
對實施例1所製備的螢光粉K2Ge0.95F6:Mn0.05 4+進行熱處理,並量測螢光粉K2Ge0.95F6:Mn0.05 4+於不同加熱溫度下之放射光譜圖譜以及螢光粉K2Ge0.95F6:Mn0.05 4+於冷卻溫度(300~25℃)下之放射光譜圖譜,其結果分別顯示於第2A、2B圖。於第2B圖中,可清楚地觀察到零聲子線(ZPL)產生,其光譜位置位於620~625nm。
實施例3:量測螢光粉K 2 Ge 0.95 F 6 :Mn 0.05 4+ 之X光粉末繞射圖譜
利用X光粉末繞射儀鑑定本發明實施例1所製備的螢光粉K2Ge0.95F6:Mn0.05 4+於不同加熱溫度下之X光粉末繞射圖譜,其結果顯示於第3圖,可清楚地觀察到螢光粉K2Ge0.95F6:Mn0.05 4+之結構相變效應。其中,第3圖下方三列所示之無機晶格資料庫(inorganic crystal structure database,ICSD)為JCPDS(Joint Committee on Powder Diffraction Standards)之標準圖譜,其分別顯示出三種晶系空間群的標準圖譜,第1相為P3m1空間群、第2相為P63mc空間群、第3相為Fm3m空間群。
將實施例1所製備的螢光粉K2Ge0.95F6:Mn0.05 4+於不同加熱溫度下之X光粉末繞射圖譜與標準圖譜進行對照後,可觀察到,於加熱溫度20℃、200℃時,螢光粉 K2Ge0.95F6:Mn0.05 4+為純相,具有對應於第1相之P3m1空間群晶體結構。在加熱溫度為250℃時,螢光粉K2Ge0.95F6:Mn0.05 4+同時具有對應於第1、2相之P3m1和P63mc空間群晶體結構,但以第1相為主,於第3圖中以(2+1)表示。在加熱溫度為300℃時,螢光粉K2Ge0.95F6:Mn0.05 4+也同時具有對應於第1、2相之P3m1和P63mc空間群晶體結構,但此時以第2相為主,於第3圖中以(2+1)表示。在加熱溫度為400℃時,螢光粉K2Ge0.95F6:Mn0.05 4+為純相,具有對應於第2相之P63mc空間群晶體結構。在加熱溫度為425℃、450℃時,螢光粉K2Ge0.95F6:Mn0.05 4+同時具有對應於第2、3相之P63mc和Fm3m空間群晶體結構,但分別以第2相、第3相為主,於第3圖中以(2+3)、(3+2)表示。而在加熱溫度為500℃時,螢光粉K2Ge0.95F6:Mn0.05 4+為純相,具有對應於第3相之Fm3m空間群晶體結構。
上述結果證實,本發明成功透過熱處理使得螢光 粉K2Ge0.95F6:Mn0.05 4+之晶體結構產生相變,特別是在熱處理的溫度介於250℃~450℃時,原本空間群為P3m1的螢光粉K2Ge0.95F6:Mn0.05 4+會相變為空間群為P63mc的螢光粉K2Ge0.95F6:Mn0.05 4+
綜合實施例2~3及第2~3圖所示結果可知,當熱處 理的溫度介於250℃~450℃時,螢光粉K2Ge0.95F6:Mn0.05 4+會產生對應於第2相之P63mc空間群晶體結構,於此晶體結構下,螢光粉K2Ge0.95F6:Mn0.05 4+可放射出紅光螢光並具有零聲子線。而最初實施例1所製備的未經熱處理的螢光粉K2Ge0.95F6:Mn0.05 4+,其晶體結構之空間群為P3m1,其雖然也 可放射出紅光螢光,但並不具有零聲子線。
實施例4:螢光粉K 2 Ge 0.95 F 6 :Mn 0.05 4+ 於不同加熱溫度下之晶體結構示意圖
第4圖顯示實施例1所製備的螢光粉K2Ge0.95F6:Mn0.05 4+於不同加熱溫度下之晶體結構示意圖,其結構對應於第3圖所觀察到的結果。由第4圖可看到,未經過熱處理的螢光粉K2Ge0.95F6:Mn0.05 4+原本為六方晶相之P3m1空間群,隨著熱處理的溫度增加,其晶體結構逐漸出現六方晶相之P63mc空間群,直到溫度為400℃時,螢光粉K2Ge0.95F6:Mn0.05 4+完全相變為具有六方晶相之P63mc空間群的純相。隨著熱處理的溫度繼續增加,其晶體結構逐漸出現Fm3m空間群,直到溫度為500℃時,螢光粉K2Ge0.95F6:Mn0.05 4+完全相變為具有Fm3m空間群的純相。
實施例5:螢光粉K 2 Ge 0.95 F 6 :Mn 0.05 4+ 於熱處理前後之拉曼光譜圖
第5圖顯示實施例1所製備的螢光粉K2Ge0.95F6:Mn0.05 4+於熱處理(400℃煆燒0.5h)前後之拉曼光譜圖。上方的圖譜為實施例1所製備的螢光粉經熱處理後之拉曼光譜圖,下方的圖譜為實施例1所製備的螢光粉經熱處理前之拉曼光譜圖。從第5圖可清楚地觀察到螢光粉K2Ge0.95F6:Mn0.05 4+於熱處理前後其振動模式v 1(A1g)、v 2(Eg)、v 3(T1u)、v 4(T1u)、v 5(T2g)、和v 6(T2u)訊號強弱所有變化,代表 螢光粉K2Ge0.95F6:Mn0.05 4+於熱處理前後其晶體結構的確產生改變。
實施例6:螢光粉K 2 Ge 0.95 F 6 :Mn 0.05 4+ 於熱處理前後於藍光LED晶片中搭配YAG黃光螢光粉產生之白光光譜圖
第6圖顯示實施例1所製備的螢光粉K2Ge0.95F6:Mn0.05 4+於熱處理(400℃煆燒0.5h)前後與藍光LED晶片搭配YAG黃光螢光粉(Y3Al5O12:Ce;釔鋁石榴石)產生之白光光譜圖。上圖顯示實施例1所製備的螢光粉經熱處理後之白光光譜圖,下圖顯示實施例1所製備的螢光粉經熱處理前之白光光譜圖譜。從第6圖可清楚地觀察到經熱處理後之螢光粉有零聲子線(ZPL)產生,其光譜位置位於620~625nm。
綜上所述,本發明提供一種螢光粉的製備方法,其係透過熱處理(250~450℃)的方式使K2[Ge1-xF6]:Mnx 4+螢光粉的結構從六方晶相P3m1空間群相變成六方晶相之P63mc空間群,進而產生零聲子線(zero phonon line;ZPL),所形成之螢光粉可應用於藍光發光二極體使其產生紅光螢光,也可於藍光發光二極體中搭配YAG黃光螢光粉(Y3Al5O12:Ce;釔鋁石榴石)及/或綠光螢光粉使其產生白光,以增加演色性。
雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。

Claims (15)

  1. 一種螢光粉,具有下列化學式:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,其中該螢光粉具有六方晶相之P63mc空間群。
  2. 如申請專利範圍第1項所述之螢光粉,其中該螢光粉於波段620~625nm具有一零聲子線(zero phonon line;ZPL)。
  3. 如申請專利範圍第1項所述之螢光粉,其中該螢光粉經由波長介於320~500nm的光激發後,放射出波長介於600~650nm的紅光。
  4. 一種螢光粉的製備方法,包括:(a)提供一初始螢光粉,其化學式為:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,其中該初始螢光粉具有六方晶相之P3m1空間群;(b)實施一熱處理,使得該初始螢光粉相變為具有六方晶相之P63mc空間群的一螢光粉。
  5. 如申請專利範圍第4項所述之製備方法,該熱處理是在250℃~450℃下持續約20分鐘。
  6. 如申請專利範圍第4項所述之製備方法,該熱處理是在400℃下持續約20分鐘。
  7. 如申請專利範圍第4項所述之製備方法,其中該螢光粉於波段620~625nm具有一零聲子線(zero phonon line;ZPL)。
  8. 如申請專利範圍第4項所述之製備方法,其中該螢光粉經由波長介於320~500nm的光激發後,放射出波長介於 600~650nm的紅光。
  9. 一種發光裝置,包括:一激發光源;以及一發光材料,配置於該激發光源上,其中該發光材料包括:一螢光粉,具有下列化學式:K2[Ge1-xF6]:Mnx 4+,其中0<x<0.2,其中該螢光粉具有六方晶相P63mc之點群結構。
  10. 如申請專利範圍第9項所述之發光裝置,其中該激發光源包括一發光二極體,其發光波長介於320~500nm。
  11. 如申請專利範圍第9項所述之發光裝置,其中該螢光粉於波段620~625nm具有一零聲子線(zero phonon line;ZPL)。
  12. 如申請專利範圍第9項所述之發光裝置,其中該螢光粉經由該激發光源所發出的光激發後,放射出波長介於600~650nm的紅光。
  13. 如申請專利範圍第9項所述之發光裝置,其中該發光材料更包括一放射黃光之螢光粉及/或一放射綠光之螢光粉。
  14. 如申請專利範圍第13項所述之發光裝置,其中該發光裝置產生白光。
  15. 一種背光模組,包括至少一如申請專利範圍第9~14項中任一項所述之發光裝置。
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